JP2003173876A - Light input type luminous display element - Google Patents
Light input type luminous display elementInfo
- Publication number
- JP2003173876A JP2003173876A JP2001373363A JP2001373363A JP2003173876A JP 2003173876 A JP2003173876 A JP 2003173876A JP 2001373363 A JP2001373363 A JP 2001373363A JP 2001373363 A JP2001373363 A JP 2001373363A JP 2003173876 A JP2003173876 A JP 2003173876A
- Authority
- JP
- Japan
- Prior art keywords
- light
- emitting display
- light emitting
- display device
- input type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims abstract description 26
- 239000010408 film Substances 0.000 claims description 42
- 239000000463 material Substances 0.000 claims description 31
- 230000003287 optical effect Effects 0.000 claims description 18
- 230000004298 light response Effects 0.000 claims description 13
- 230000004044 response Effects 0.000 claims description 9
- 230000007704 transition Effects 0.000 claims description 6
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 5
- 229910052787 antimony Inorganic materials 0.000 claims description 4
- 229910052714 tellurium Inorganic materials 0.000 claims description 4
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims description 4
- 239000010409 thin film Substances 0.000 claims description 4
- 229920002457 flexible plastic Polymers 0.000 claims description 2
- 239000012782 phase change material Substances 0.000 claims description 2
- 230000006386 memory function Effects 0.000 abstract description 2
- 238000000034 method Methods 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 8
- 230000006870 function Effects 0.000 description 7
- 238000004544 sputter deposition Methods 0.000 description 7
- 239000004973 liquid crystal related substance Substances 0.000 description 5
- 239000007789 gas Substances 0.000 description 4
- 229910001215 Te alloy Inorganic materials 0.000 description 3
- 238000009125 cardiac resynchronization therapy Methods 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- DDJAGKOCVFYQOV-UHFFFAOYSA-N tellanylideneantimony Chemical compound [Te]=[Sb] DDJAGKOCVFYQOV-UHFFFAOYSA-N 0.000 description 3
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229920000553 poly(phenylenevinylene) Polymers 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- -1 polyphenylene vinylene Polymers 0.000 description 2
- 230000035939 shock Effects 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 229910000763 AgInSbTe Inorganic materials 0.000 description 1
- FUJCRWPEOMXPAD-UHFFFAOYSA-N Li2O Inorganic materials [Li+].[Li+].[O-2] FUJCRWPEOMXPAD-UHFFFAOYSA-N 0.000 description 1
- 229910019015 Mg-Ag Inorganic materials 0.000 description 1
- 229910001245 Sb alloy Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- XCJYREBRNVKWGJ-UHFFFAOYSA-N copper(II) phthalocyanine Chemical compound [Cu+2].C12=CC=CC=C2C(N=C2[N-]C(C3=CC=CC=C32)=N2)=NC1=NC([C]1C=CC=CC1=1)=NC=1N=C1[C]3C=CC=CC3=C2[N-]1 XCJYREBRNVKWGJ-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- XUCJHNOBJLKZNU-UHFFFAOYSA-M dilithium;hydroxide Chemical compound [Li+].[Li+].[OH-] XUCJHNOBJLKZNU-UHFFFAOYSA-M 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- RBTKNAXYKSUFRK-UHFFFAOYSA-N heliogen blue Chemical compound [Cu].[N-]1C2=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=NC([N-]1)=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=N2 RBTKNAXYKSUFRK-UHFFFAOYSA-N 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- IBHBKWKFFTZAHE-UHFFFAOYSA-N n-[4-[4-(n-naphthalen-1-ylanilino)phenyl]phenyl]-n-phenylnaphthalen-1-amine Chemical compound C1=CC=CC=C1N(C=1C2=CC=CC=C2C=CC=1)C1=CC=C(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C3=CC=CC=C3C=CC=2)C=C1 IBHBKWKFFTZAHE-UHFFFAOYSA-N 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000010583 slow cooling Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は光入力型発光表示素
子に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light input type light emitting display device.
【０００２】[0002]
【従来の技術】近年、電子ペーパーと呼ばれる概念の表
示装置に関する開発が精力的になされている。特許第０
２７３３６７６号には電気泳動表示、特表平１１−５０
２９５０号公報にはマイクロカプセル化した電気泳動表
示、特開平０８−１９７８５３号公報には感熱記録媒体
を用いた表示、特開平０７−１２１５２９号公報には電
子ペーパーを用いたシステム等が知られている。しか
し、これら表示装置に於いては表示コントラストが不十
分であり、書き換え時間が長い等の不具合が存在してい
る。2. Description of the Related Art In recent years, vigorous development has been made on a display device having a concept called electronic paper. Patent No. 0
No. 2733676, electrophoretic display, special table 11-50
2950 discloses a microencapsulated electrophoretic display, JP-A-08-197853 discloses a display using a thermosensitive recording medium, and JP-A-07-121529 discloses a system using electronic paper. There is. However, these display devices have problems such as insufficient display contrast and long rewriting time.
【０００３】一方、電子ペーパーとは異なるが、従来か
らの表示装置としてＣＲＴ、液晶表示装置があり、特に
液晶表示装置はＣＲＴと比較し薄型軽量で、しかも駆動
消費電力が小さいという特徴を有している。On the other hand, although different from electronic paper, conventional display devices include CRTs and liquid crystal display devices. In particular, liquid crystal display devices are characterized by being thinner and lighter than CRTs and having low driving power consumption. ing.
【０００４】ところが、液晶表示装置はバックライト光
源を有する、視野角が狭い、応答速度が遅い、大面積化
に不利、室内証明下でのコントラストが必ずしも十分で
ない等の欠点を有する。この様な背景のもと、フラット
パネルディスプレイ分野では、プラズマディスプレイ、
無機ＥＬ（エレクトロルミネッセンス）ディスプレイ、
真空マイクロカソード素子などの発光型表示素子が注目
されてきた。中でも有機ＥＬ素子は１０Ｖ前後の低電圧
駆動で１０００ｃｄ／ｍ２以上の高輝度発光を実現で
き、しかも真空蒸着法や塗布等の方法により簡便に形成
できるので大面積化に有利である。この様に有機ＥＬ素
子は液晶表示装置の欠点を克服し、表示性能を大幅に向
上させうる表示装置として実用化に向けた研究開発が精
力的に進められつつある。更に自発光表示であるために
バックライトを必要とせず、更なる薄型化が可能と思わ
れる。However, the liquid crystal display device has drawbacks that it has a backlight light source, has a narrow viewing angle, has a slow response speed, is disadvantageous in increasing the area, and does not always have sufficient contrast under indoor certification. Against this background, in the flat panel display field, plasma displays,
Inorganic EL (electroluminescence) display,
Emissive display devices such as vacuum microcathode devices have received attention. Above all, the organic EL element can realize high-luminance light emission of 1000 cd / m 2 or more by driving at a low voltage of about 10 V, and can be easily formed by a method such as a vacuum vapor deposition method or a coating method, which is advantageous for increasing the area. As described above, the organic EL element overcomes the drawbacks of the liquid crystal display device, and research and development for practical use are being vigorously pursued as a display device capable of significantly improving the display performance. Further, since it is a self-luminous display, it does not require a backlight, and it seems that further thinning is possible.
【０００５】しかしながら、この様な有機ＥＬ素子を用
いた表示装置は、表示すべき画像、または文字等の外部
情報を電気的な入力法により表示するために、有機ＥＬ
素子駆動用の電気的回路構成が必要になる。具体的に
は、液晶表示装置で用いられているような、アクティブ
素子と融合することで表示装置が出来上がる。このアク
ティブ表示素子の例は特開平０７−２３４４２０号公報
などに記載されている。アクティブ素子の形成は一つ一
つの表示画素中にスイッチング用のトランジスタを組み
込んでいるため、製造工程が複雑でありコスト高を招い
ている。However, a display device using such an organic EL element is designed to display an image to be displayed or external information such as characters by an electric input method.
An electric circuit configuration for driving the device is required. Specifically, a display device is completed by combining it with an active element such as that used in a liquid crystal display device. An example of this active display element is described in Japanese Patent Application Laid-Open No. 07-234420. The active element is formed by incorporating a switching transistor into each display pixel, which complicates the manufacturing process and increases the cost.
【０００６】外部情報入力にアクティブ素子を用いない
で実行する方式として、光による入力方式あり、これは
空間変調素子として古くから提案されている。又、１イ
ンチ程のＣＲＴを用い拡大光学系を用いた空間光変調素
子がＧ．Ｈ．Ｈｅａｒｔｌｉｎｇ：ＡＣＳ Ｓｙｍｐｏ
ｓｉｕｍ ｓｅｒｉｓｅ，Ｎｏ．１６４（１９８１）２
６５に記載されている。また特開平７−１７５４２０号
公報には光入力により電荷を発生させ、この発生電荷に
より有機ＥＬ表示部を発光表示する素子の提案がある。As a method for executing the external information input without using an active element, there is an optical input method, which has been proposed as a spatial modulator for a long time. In addition, a spatial light modulator using a magnifying optical system using a CRT of about 1 inch is a G.I. H. Heartling: ACS Sympo
system series, No. 164 (1981) 2
65. Further, Japanese Patent Application Laid-Open No. 7-175420 proposes an element in which charges are generated by light input, and the generated charges cause the organic EL display section to emit light.
【０００７】[0007]
【発明が解決しようとする課題】しかしながら、これら
空間光変調素子はメモリー性が無く、表示に際しては、
常に光入力が必要であり、表示エネルギーの低消費電力
化には不向きであり、更に電子ペーパーの様な薄型化に
は好ましくない装置構成になっていた。However, these spatial light modulators do not have a memory property, and when displaying,
Optical input is always required, and it is not suitable for low power consumption of display energy, and the device configuration is unfavorable for thinning like electronic paper.
【０００８】本発明の目的は、視認性の優れた有機ＥＬ
表示素子を用い、外部情報入力手段として光入力を行う
ことで電気的なアクティブ回路構成を不要にし、従っ
て、コスト高を招くこと無く、さらに、光応答部にメモ
リー機能を持たせることで低消費電力と薄型化を可能と
した光入力型発光表示装置の提供にある。An object of the present invention is to provide an organic EL having excellent visibility.
By using a display element and performing optical input as external information input means, an electrically active circuit configuration is not required, and therefore, the cost is not increased, and the optical response section has a memory function to reduce consumption An object is to provide an optical input type light emitting display device capable of reducing power consumption and thickness.
【０００９】[0009]
【課題を解決するための手段】上記の目的を達成するた
め、請求項１の発明は、基板上に形成される１対の電極
内に発光表示部及び光応答部が積層され、光入力に応じ
て発光表示が行われるよう構成されている光入力型発光
表示素子を最も主要な特徴とする。In order to achieve the above-mentioned object, the invention of claim 1 is such that a light emitting display section and a light response section are laminated in a pair of electrodes formed on a substrate for light input. The light input type light emitting display element, which is configured to perform light emission display according to the above, is the most main feature.
【００１０】上記の目的を達成するため、請求項２の発
明は、発光表示部及び光応答部が互いに材料の異なる膜
で構成されている光入力型発光表示素子を特徴する。In order to achieve the above object, the invention of claim 2 is characterized by an optical input type light emitting display element in which the light emitting display section and the light response section are formed of films made of different materials.
【００１１】上記の目的を達成するため、請求項３の発
明は、光応答部を構成する膜がスイッチング応答かつ保
持機能を有するよう構成されている光入力型発光表示素
子を特徴とする。In order to achieve the above-mentioned object, the invention of claim 3 is characterized by an optical input type light emitting display device in which a film constituting a light response portion is constituted to have a switching response and a holding function.
【００１２】上記の目的を達成するため、請求項４の発
明は、光応答部が第１の光により情報が入力され、第２
の光により情報が消去されるよう構成されている光入力
型発光表示素子を特徴とする。In order to achieve the above-mentioned object, in the invention of claim 4, the optical response section receives information by the first light,
The light input type light emitting display element is characterized in that information is erased by the light.
【００１３】上記の目的を達成するため、請求項５の発
明は、光表示部が有機薄膜で構成されている入力型発光
表示素子を特徴とする。In order to achieve the above-mentioned object, the invention of claim 5 features an input type light emitting display device in which an optical display section is composed of an organic thin film.
【００１４】上記の目的を達成するため、請求項６の発
明は、光応答部は光照射からもたらされる熱により可逆
的に相転移する材料の膜により構成されている光入力型
発光表示素子を特徴とする。In order to achieve the above object, the invention of claim 6 provides an optical input type light emitting display device in which the photoresponsive portion is composed of a film of a material which reversibly undergoes a phase transition by heat generated by light irradiation. Characterize.
【００１５】上記の目的を達成するため、請求項７の明
は、相転移材料の膜をアンチモン、テルル元素を主成分
とするよう構成した光入力型発光表示素子を最も大きな
特徴とする。In order to achieve the above object, the seventh aspect of the present invention is characterized most by an optical input type light emitting display device in which a film of a phase change material is mainly composed of antimony and tellurium elements.
【００１６】上記の目的を達成するため、請求項８発明
は、光入力情報が２次元の表示情報であり、この情報に
対応した発光表示を行うよう構成した光入力型発光表示
素子を特徴とする。In order to achieve the above object, the invention of claim 8 is characterized in that the light input information is two-dimensional display information, and the light input type light emitting display element is configured to perform light emission display corresponding to this information. To do.
【００１７】上記の目的を達成するため、請求項９発明
は、基板が可視光に対し透明である光入力型発光表示素
子を特徴とする。In order to achieve the above-mentioned object, a ninth aspect of the invention features a light input type light emitting display device in which a substrate is transparent to visible light.
【００１８】上記の目的を達成するため、請求項１０の
発明は、基板が可視光に対し透明であり、且つ可撓性を
有するプラスチック基材を用いて形成されている入力型
発光表示素子を特徴とする。In order to achieve the above object, the invention of claim 10 provides an input type light emitting display device in which a substrate is transparent to visible light and is formed by using a flexible plastic base material. Characterize.
【００１９】請求項１にかかる光入力型発光表示素子に
よれば、基板上に形成される１対の電極内に発光表示部
及び光応答部が積層され、光入力に応じて発光表示が行
われることにより電気的なアクティブ回路を必要としな
い単純積層構成からなる表示素子が作製できる。According to the light input type light emitting display device of the first aspect, the light emitting display part and the light response part are laminated within the pair of electrodes formed on the substrate, and the light emitting display is performed according to the light input. By doing so, it is possible to manufacture a display element having a simple laminated structure that does not require an electrically active circuit.
【００２０】請求項２にかかる光入力型発光表示素子に
よれば、発光表示部及び光応答部が互いに材料の異なる
膜で構成され、光入力に応じて発光表示が行われること
で機能分離を行い効率の良い光入力型発光素子の作製が
可能になる。According to the light input type light emitting display device of the second aspect, the light emitting display portion and the light response portion are formed of films made of different materials, and the light emission display is performed according to the light input, thereby separating the functions. This makes it possible to fabricate a light input type light emitting device with high efficiency.
【００２１】請求項３にかかる光入力型発光表示素子に
よれば、光応答部を構成する膜がスイッチング応答かつ
保持機能を有し、光入力に応じて発光表示が行われるこ
とにより、常時光入力書き込みが不要になり、表示装置
の低消費電力化に寄与する表示素子の作製が可能にな
る。According to the light input type light emitting display device of the third aspect, the film forming the light response portion has a switching response and a holding function, and the light emitting display is performed in response to the light input, so that the light emitting device always emits light. Input writing is not required, and a display element that contributes to low power consumption of a display device can be manufactured.
【００２２】請求項４にかかる光入力型発光表示素子に
よれば、光応答部が第１の光により情報が入力され、第
２の光により情報が消去されることにより、順次書き換
え表示可能な表示素子の作製が可能になる。According to the light input type light emitting display device of the fourth aspect, information is input to the photoresponsive portion by the first light and information is erased by the second light so that rewriting and display can be sequentially performed. A display element can be manufactured.
【００２３】請求項５にかかる光入力型発光表示素子に
よれば、光表示部が有機薄膜で構成されていることによ
り、大面積、低コスト、高い視認性の得られる発光素子
の作製が可能になる。According to the light input type light emitting display device of the fifth aspect, since the light display portion is composed of the organic thin film, it is possible to manufacture a light emitting device having a large area, low cost and high visibility. become.
【００２４】請求項６にかかる光入力型発光表示素子に
よれば、光応答部は光照射からもたらされる熱により可
逆的に相転移する材料の膜を用いる事により安定した動
作機能を示す表示素子の作製が可能になる。According to the sixth aspect of the light input type light emitting display element, the light responsive section is a display element exhibiting a stable operation function by using a film of a material that reversibly undergoes a phase transition by heat generated by light irradiation. Can be manufactured.
【００２５】請求項７にかかる光入力型発光表示素子に
よれば、相転移材料の膜としてアンチモン、テルル元素
を主成分とする材料膜を用いる事により、低エネルギー
書き込み、消去が可能な発光表示素子の作製が可能にな
る。According to the light input type light emitting display device according to the seventh aspect, by using a material film containing antimony and tellurium as main components as a film of the phase transition material, low energy writing and erasing can be performed. The device can be manufactured.
【００２６】請求項８にかかる光入力型発光表示素子に
よれば、このデバイスは外部入力情報が２次元の表示情
報に好適であり、この情報に対応した発光表示を行うこ
とが出来る光入力型発光表示素子の作製が可能になる。According to the light input type light emitting display device according to the eighth aspect, this device is suitable for external input information for two-dimensional display information, and the light input type capable of performing light emission display corresponding to this information. A light emitting display device can be manufactured.
【００２７】請求項９にかかる光入力型発光表示素子に
よれば、表示装置の基板が可視光に対し透明な基板を用
いる事により視認性の高い光入力型発光表示素子の提供
が可能になる。According to the light input type light emitting display element according to claim 9, it is possible to provide the light input type light emitting display element having high visibility by using a substrate transparent to visible light for the display device. .
【００２８】請求項１０にかかる光入力型発光表示素子
によれば、機械的な衝撃にも十分耐えうる光入力型発光
表示素子の提供が可能になる。According to the light input type light emitting display element of the tenth aspect, it is possible to provide the light input type light emitting display element which can sufficiently withstand mechanical shock.
【００２９】[0029]
【発明の実施の形態】本発明の光入力型発光表示素子の
実施の形態を図１〜図５を参照しつつ説明する。BEST MODE FOR CARRYING OUT THE INVENTION An embodiment of a light input type light emitting display device of the present invention will be described with reference to FIGS.
【００３０】図１には本発明の光入力型発光表示素子の
一例が示されている。図１中、１は基板であり、基板１
は、対向配置された光応答部２及び発光表示部３、光応
答部２及び発光表示部３を挟むように設けられた膜状の
電極４，５により構成されている。電極膜４，５により
一対の電極が形成されている。FIG. 1 shows an example of the light input type light emitting display device of the present invention. In FIG. 1, reference numeral 1 denotes a substrate, and the substrate 1
Is composed of the photoresponsive portion 2 and the light emitting display portion 3 which are arranged to face each other, and the film-shaped electrodes 4 and 5 provided so as to sandwich the photoresponsive portion 2 and the light emitting display portion 3. The electrode films 4 and 5 form a pair of electrodes.
【００３１】光応答部２は光入力によりスイッチングす
る材料からなる膜であり、光子により化学的に構造変化
する材料、または光による熱エネルギーにより相変化す
る材料が挙げられる。またこれら材料は双安定状態を示
し、特に電気的性質、即ち抵抗率が変化する材料が好ま
しい。The photo-responsive section 2 is a film made of a material that is switched by light input, and examples thereof include a material whose structure is chemically changed by photons or a material whose phase is changed by thermal energy of light. Further, these materials exhibit a bistable state, and in particular, a material whose electric property, that is, resistivity changes, is preferable.
【００３２】発光表示部３は有機ＥＬ発光材が好まし
く、真空蒸着法などの手法により簡便に大面積成膜可能
な低分子有機ＥＬ材料や、塗布成膜可能な高分子有機Ｅ
Ｌ材料からなる。またこの有機ＥＬ材料の発光効率を高
めるために、特に低分子系有機ＥＬ材料を用いた場合、
正孔注入層、正孔移動層などを配置させた多層からなる
層構成を取る場合もある。The light emitting display section 3 is preferably an organic EL light emitting material, and is a low molecular weight organic EL material which can be easily formed into a large area film by a method such as a vacuum deposition method, or a high molecular weight organic E material which can be applied to form a film.
It consists of L material. In addition, in order to improve the luminous efficiency of this organic EL material, especially when a low molecular weight organic EL material is used,
In some cases, a layered structure including a hole injection layer, a hole transfer layer, and the like is provided.
【００３３】対電極を形成する発光表示部３上部に積層
される電極５は、電子注入に祭し、電気的な障壁を形成
し難いＭｇ−Ａｇ電極、イッテルビウム、Ｌｉ元素を含
むＬｉ電極、Ａｌの積層電極構成を取ってもよい。また
他方の電極４としては発光強度の減衰を生じさせない透
明電極が好ましい。または極薄金属電極であってもよ
い。The electrode 5 laminated on the light emitting display unit 3 forming the counter electrode is a Mg-Ag electrode which is difficult to form an electric barrier for electron injection, a y-terbium electrode, a Li electrode containing a Li element, and an Al electrode. You may take the laminated electrode structure of. The other electrode 4 is preferably a transparent electrode that does not cause the emission intensity to be attenuated. Alternatively, it may be an ultrathin metal electrode.
【００３４】図２に本発明の光入力型発光表示素子の電
気的等価回路を示す。図中２１は直流バイアス電源、２
２は電気的抵抗の双安定状態を有する光応答部、２３は
発光表示部である。FIG. 2 shows an electrically equivalent circuit of the light input type light emitting display device of the present invention. In the figure, 21 is a DC bias power source, 2
Reference numeral 2 is a photoresponsive portion having a bistable state of electric resistance, and 23 is a light emitting display portion.
【００３５】図３に図１に示す光応答部３の光強度と抵
抗率との典型的な特性を、又、図４に図１に示す発光表
示部４の電圧と電流密度との典型的な特性を示す。この
発光表示部４の電流−電圧曲線はダイオード的な性質を
示す。高分子有機ＥＬ材料として知られているＰＰＶ(
ポリフェニレンビニレン) 誘導体は印加電圧３Ｖ付近で
電流が流れ始め（従って、この電圧以下では非発光）、
５Ｖ印加時に０．１ｍＡ／ｃｍ２の電流密度を示す( 発
光：約５００ｃｄ／ｍ２) 。従って図３に示す双安定状
態の２値の抵抗値は５Ｖの電位を与えるある抵抗値イ
と、わずか２Ｖの電圧降下を与える抵抗値ロの変化をも
たらせばよいことが言える。FIG. 3 shows typical characteristics of the light intensity and resistivity of the photoresponsive section 3 shown in FIG. 1, and FIG. 4 shows typical characteristics of the voltage and current density of the light emitting display section 4 shown in FIG. Shows the characteristic. The current-voltage curve of the light emitting display unit 4 has a diode-like property. PPV (known as polymer organic EL material)
In the polyphenylene vinylene) derivative, a current starts to flow near an applied voltage of 3 V (hence, no light emission occurs below this voltage),
It shows a current density of 0.1 mA / cm 2 when 5 V is applied (light emission: about 500 cd / m 2). Therefore, it can be said that the binary resistance value in the bistable state shown in FIG. 3 is required to bring about a change in a certain resistance value i which gives a potential of 5V and a resistance value b which gives a voltage drop of only 2V.
【００３６】光照射により発生する熱エネルギーにより
電気抵抗が変化する物質としてアンチモン、テルル合金
がある。主成分をアンチモン・テルルとし、耐候性、安
定性、光学的吸収係数制御の為に、銀、インジウムやゲ
ルマニウムを添加した材料が好適である。これら材料は
スパッタリング等の真空成膜法にて室温にて形成可能で
ある。成膜後の膜はアモルファス状態であり、抵抗率は
１０８Ω・ｃｍである。また結晶状態の抵抗率は１０２
Ω・ｃｍであり６桁の抵抗率変化を与える。更にこれら
双安定への可逆的変化は、光り書き込み照射後の徐冷、
急冷で制御可能である。Antimony and tellurium alloys are substances whose electric resistance is changed by thermal energy generated by light irradiation. A material containing antimony tellurium as a main component and added with silver, indium or germanium is preferable for weather resistance, stability and optical absorption coefficient control. These materials can be formed at room temperature by a vacuum film forming method such as sputtering. The formed film is in an amorphous state and has a resistivity of 108 Ω · cm. The crystalline resistivity is 102
Ω · cm, which gives a 6-digit change in resistivity. Furthermore, these reversible changes to bistability are due to slow cooling after irradiation with light.
It can be controlled by quenching.
【００３７】図５に本発明の光入力型発光表示素子の光
入力例を示す。図中、３１は光源、３２は主査方向情報
である１次元の画像入力入力情報、３３は副走査方向、
３４は光入力型発光表示素子である。FIG. 5 shows an example of light input of the light input type light emitting display element of the present invention. In the figure, 31 is a light source, 32 is one-dimensional image input input information which is main scanning direction information, 33 is a sub-scanning direction,
Reference numeral 34 is a light input type light emitting display element.
【００３８】光源３１から発生する書き込み光を周知の
走査法により１次元の画像入力情報３２に変換し、これ
を主走査方向情報と呼ぶ。次に副走査方向３３に移動す
る事により２次元書き込みを行う。この時、バイアス電
源に接続されていれば、書き込みと同時に発光表示がな
され、また、書き込み終了後、書き込み装置から発光表
示素子を脱着させ、バイアス電源に接続し表示させるこ
とも可能である。特に電子ペーパーなる紙に似た極薄表
示媒体としては、この後者がふさわしい。Writing light generated from the light source 31 is converted into one-dimensional image input information 32 by a known scanning method, and this is called main scanning direction information. Next, two-dimensional writing is performed by moving in the sub scanning direction 33. At this time, if the device is connected to the bias power supply, light emission display is performed at the same time as writing, and after the writing is completed, the light emitting display element can be detached from the writing device and connected to the bias power supply for display. The latter is particularly suitable as an ultrathin display medium similar to electronic paper.
【００３９】本発明の光入力型発光表示素子の積層構造
を具体的に使用するにあたっては、各層形成が全て１５
０℃以下の温度にて形成できるため、基板１としては、
ガラス基板はもとより、プラスチック基板も使用可能で
ある。In practical use of the laminated structure of the light input type light emitting display device of the present invention, each layer is formed by 15 layers.
Since it can be formed at a temperature of 0 ° C. or lower, the substrate 1 is
Not only glass substrates but also plastic substrates can be used.
【００４０】以下、実施例をもとに説明を行う。
［実施例１］ガラスの基板上にスパッタリング法により
ＩＴＯ( 酸化インジウム錫) 膜を対電極の片側電極とし
て形成する。この膜の抵抗率が４×１０−３Ω・ｃｍ以
下になるように、基板温度１３０℃、スパッタリングガ
ス：Ａｒ＋酸素の混合ガスにより成膜する。Hereinafter, description will be given based on an embodiment. [Example 1] An ITO (indium tin oxide) film was formed as one side electrode of a counter electrode on a glass substrate by a sputtering method. A film is formed with a substrate temperature of 130 ° C. and a mixed gas of sputtering gas: Ar + oxygen so that the resistivity of this film is 4 × 10 −3 Ω · cm or less.
【００４１】光応答部としてのアンチモン・テルル合金
膜のスパッタリング成膜を行う。基板温度は室温にて実
施する。その膜厚は８０Å〜１０００Å、好ましくは１
００Å〜２００Åである。８０Åより薄いと光吸収能が
低下し、また１０００Åより厚いと透過光が低下するた
め適正値が存在する。An antimony-tellurium alloy film as a photoresponsive portion is formed by sputtering. The substrate temperature is room temperature. The film thickness is 80Å to 1000Å, preferably 1
It is from 00Å to 200Å. When the thickness is less than 80Å, the light absorption ability decreases, and when the thickness is more than 1000Å, the transmitted light decreases, so that an appropriate value exists.
【００４２】膜厚１００ÅのＡｇＩｎＳｂＴｅの抵抗率
は３×１０８Ω・ｃｍであり、波長６３５μm の光源を
用い結晶化パワー３ｍＷで処理したところ、結晶相の抵
抗率は２×１０２Ω・ｃｍに低下した。再び抵抗率の高
い状態に変化させるにはレーザーパワー２０ｍＷ、１０
ｎ秒のパルス照射することでアモルファス状態（高抵抗
率）に復帰する。The resistivity of AgInSbTe having a film thickness of 100 Å was 3 × 10 8 Ω · cm, and the resistivity of the crystal phase was reduced to 2 × 10 2 Ω · cm when treated with a crystallization power of 3 mW using a light source having a wavelength of 635 μm. To change the state to high resistivity again, laser power 20mW, 10
Amorphous state (high resistivity) is restored by pulse irradiation for n seconds.
【００４３】次に、図１の発光表示部３の作製の仕方に
ついて記す。上記基板、ＩＴＯ膜、光応答膜堆積後、光
表示部を積層形成する。ここでは真空蒸着法にて形成可
能な低分子有機ＥＬ材料を形成した。Next, a method of manufacturing the light emitting display section 3 of FIG. 1 will be described. After depositing the substrate, the ITO film, and the photoresponsive film, an optical display unit is laminated. Here, a low molecular weight organic EL material which can be formed by a vacuum deposition method was formed.
【００４４】正孔注入層、正孔輸送層、発光層、電子輸
送層を順次成膜し、陰電極を形成することで完了する。This is completed by sequentially forming a hole injecting layer, a hole transporting layer, a light emitting layer and an electron transporting layer to form a negative electrode.
【００４５】具体的にはＣｕＰｃ（銅フタロシアニン）
（３０ｎｍ）、α−ＮＰＤ（ナフチルフェニルアミン系
材料）（２５ｎｍ）、Ａｌｑ３（アルミノキノン）（３
０ｎｍ）、Ｌｉ２Ｏ（２ｎｍ）、Ａｌ（２００ｎｍ）を
各々成膜した。Specifically, CuPc (copper phthalocyanine)
(30 nm), α-NPD (naphthylphenylamine-based material) (25 nm), Alq3 (aluminoquinone) (3
0 nm), Li2O (2 nm), and Al (200 nm) were deposited.
【００４６】この様にして作製される光入力型発光表示
素子に図５に示す装置にて外部情報を光入力し、バイア
ス電圧６Ｖを対電極間に印加したところ発光による表示
が可能となった。また、光入力型発光表示素子を図５の
書き込み系装置より取り外し、乾電池によるバイアス印
加を実施したところ、同様の発光表示が得られた。External information was optically input to the light-emitting type light-emitting display element thus manufactured by the apparatus shown in FIG. 5 and a bias voltage of 6 V was applied between the counter electrodes to enable display by light emission. . Further, when the light input type light emitting display device was removed from the writing system device of FIG. 5 and a bias was applied by a dry cell, the same light emitting display was obtained.
【００４７】［実施例２］基板にＰＥＴ（ポリエチレン
テレフタレート）フィルム（厚さ０．５ｍｍ）を用い、
スパッタリング法によりＩＴＯ( 酸化インジウム錫) 膜
を対電極の片側電極として形成する。この膜の抵抗率が
１×１０−２Ω・ｃｍ以下になるように、基板温度７０
℃、スパッタリングガス：Ａｒ＋酸素の混合ガスにより
成膜する。[Example 2] A PET (polyethylene terephthalate) film (thickness: 0.5 mm) was used as a substrate,
An ITO (indium tin oxide) film is formed as one electrode of the counter electrode by a sputtering method. The substrate temperature is set to 70 so that the resistivity of this film is 1 × 10 −2 Ω · cm or less.
C., sputtering gas: A film is formed with a mixed gas of Ar and oxygen.
【００４８】光応答部としてのアンチモン・テルル合金
膜のスパッタリング成膜を行う。基板温度は室温にて実
施する。その膜厚は１００Åである。An antimony-tellurium alloy film as a photoresponsive portion is formed by sputtering. The substrate temperature is room temperature. Its film thickness is 100Å.
【００４９】発光表示部は塗布成膜可能な高分子ＥＬ材
料を形成した。正孔注入層としてＰＥＤＯＴ（ポリエチ
レンジオキシチオフェン）をスピンコーティング・乾燥
にて膜厚３０ｎｍ形成し、次にＰＰＶ誘導体の高分子発
光材料の成膜を同様に行った（膜厚８０ｎｍ）。上部電
極にイッテルビウム（Ｙｂ）金属膜を堆積し素子を完成
させた。For the light emitting display section, a polymer EL material capable of coating and film formation was formed. As a hole injection layer, PEDOT (polyethylenedioxythiophene) was spin-coated and dried to form a film having a thickness of 30 nm, and then a polymer light emitting material of PPV derivative was formed in the same manner (film thickness of 80 nm). A ytterbium (Yb) metal film was deposited on the upper electrode to complete the device.
【００５０】この様にして作製される光入力型発光表示
素子を図５に示す装置にて外部情報を光入力し、バイア
ス電圧６Ｖを対電極間に印加したところ発光による表示
が可能となった。また、光入力発光素子を図５の書き込
み系装置より取り外し、乾電池によるバイアス印加を実
施したところ、同様の発光表示が得られた。The light-emitting type light-emitting display device thus manufactured was made to emit light when external information was optically input by the device shown in FIG. 5 and a bias voltage of 6 V was applied between the counter electrodes. . Further, when the light input light emitting element was removed from the writing system device of FIG. 5 and a bias was applied by a dry cell, similar light emitting display was obtained.
【００５１】[0051]
【発明の効果】本発明の請求項１にかかる光入力型発光
表示素子によれば、基板上に形成される１対の電極内に
発光表示部及び光応答部が積層され、光入力に応じて発
光表示が行われることにより電気的なアクティブ回路を
必要としない単純積層構成からなる表示素子が作製でき
る。According to the light input type light emitting display device according to the first aspect of the present invention, the light emitting display part and the light response part are laminated in the pair of electrodes formed on the substrate, and the light input display part and the light response part are arranged in accordance with the light input. By performing light-emission display by using a light-emitting display, a display element having a simple stacked structure which does not require an electrically active circuit can be manufactured.
【００５２】本発明の請求項２にかかる光入力型発光表
示素子によれば、発光表示部及び光応答部が互いに材料
の異なる膜で構成され、光入力に応じて発光表示が行わ
れることで機能分離を行い効率の良い光入力型発光素子
の作製が可能になる。According to the light input type light emitting display device according to the second aspect of the present invention, the light emitting display part and the light response part are formed of films made of different materials, and light emission display is performed according to light input. By separating the functions, an efficient light input type light emitting device can be manufactured.
【００５３】本発明の請求項３にかかる光入力型発光表
示素子によれば、光応答部を構成する膜がスイッチング
応答かつ保持機能を有し、光入力に応じて発光表示が行
われることにより、常時光入力書き込みが不要になり、
表示装置の低消費電力化に寄与する表示素子の作製が可
能になる。According to the light input type light emitting display device according to claim 3 of the present invention, the film forming the light response portion has a switching response and a holding function, and light emission display is performed according to light input. , There is no need for optical input writing all the time,
It is possible to manufacture a display element that contributes to lower power consumption of the display device.
【００５４】本発明の請求項４にかかる光入力型発光表
示素子によれば、光応答部が第１の光により情報が入力
され、第２の光により情報が消去されることにより、順
次書き換え表示可能な表示素子の作製が可能になる。According to the light input type light emitting display device according to claim 4 of the present invention, the light responsive portion receives the information by the first light and erases the information by the second light, thereby sequentially rewriting. It becomes possible to manufacture a display element capable of displaying.
【００５５】本発明の請求項５にかかる光入力型発光表
示素子によれば、光表示部が有機薄膜で構成されている
ことにより、大面積、低コスト、高い視認性の得られる
発光素子の作製が可能になる。According to the light input type light emitting display device according to claim 5 of the present invention, since the light display portion is composed of the organic thin film, a light emitting device having a large area, low cost and high visibility can be obtained. Can be manufactured.
【００５６】本発明の請求項６にかかる光入力型発光表
示素子によれば、光応答部は光照射からもたらされる熱
により可逆的に相転移する材料の膜を用いる事により安
定した動作機能を示す表示素子の作製が可能になる。In the light input type light emitting display device according to claim 6 of the present invention, the light response portion has a stable operation function by using a film of a material that reversibly undergoes a phase transition by heat generated by light irradiation. The display element shown can be manufactured.
【００５７】本発明の請求項７にかかる光入力型発光表
示素子によれば、相転移材料の膜としてアンチモン、テ
ルル元素を主成分とする材料膜を用いる事により、低エ
ネルギー書き込み、消去が可能な発光表示素子の作製が
可能になる。According to the light input type light emitting display device according to claim 7 of the present invention, low energy writing and erasing are possible by using a material film containing antimony and tellurium as main components as the film of the phase transition material. It is possible to manufacture various light emitting display elements.
【００５８】本発明の請求項８にかかる光入力型発光表
示素子によれば、このデバイスは外部入力情報が２次元
の表示情報に好適であり、この情報に対応した発光表示
を行うことが出来る光入力型発光表示素子の作製が可能
になる。According to the light input type light emitting display device according to claim 8 of the present invention, the external input information of this device is suitable for two-dimensional display information, and light emission display corresponding to this information can be performed. It is possible to manufacture a light input type light emitting display device.
【００５９】本発明の請求項９にかかる光入力型発光表
示素子によれば、表示装置の基板が可視光に対し透明な
基板を用いる事により視認性の高い光入力型発光表示素
子の提供が可能になる。According to the light input type light emitting display element according to claim 9 of the present invention, it is possible to provide the light input type light emitting display element having high visibility by using the substrate of the display device which is transparent to visible light. It will be possible.
【００６０】本発明の請求項１０にかかる光入力型発光
表示素子によれば、機械的な衝撃にも十分耐えうる光入
力型発光表示素子の提供が可能になる。According to the light input type light emitting display element of the tenth aspect of the present invention, it is possible to provide the light input type light emitting display element which can sufficiently withstand mechanical shock.
【図１】本発明による光入力型発光表示素子の概要図で
ある。FIG. 1 is a schematic view of a light input type light emitting display device according to the present invention.
【図２】光入力型発光表示素子の電気的等価回路を示す
回路図である。FIG. 2 is a circuit diagram showing an electrical equivalent circuit of a light input type light emitting display device.
【図３】図１の光応答部における電気抵抗値の双安定状
態を示すグラフである。FIG. 3 is a graph showing a bistable state of an electric resistance value in the photoresponsive section of FIG.
【図４】本発明の光入力型発光表示素子の電圧−電流密
度特性を示すグラフである。FIG. 4 is a graph showing voltage-current density characteristics of the light input type light emitting display device of the present invention.
【図５】本発明の光入力型発光表示素子の光入力例を示
す図である。FIG. 5 is a diagram showing an example of light input of the light input type light emitting display element of the present invention.
１ 基板 ２ 光応答部 ３ 発光表示部 ４、５ 電極 1 substrate 2 Optical response part 3 Light emitting display 4, 5 electrodes
───────────────────────────────────────────────────── フロントページの続き Ｆターム(参考） 3K007 AB05 AB16 AB18 BA00 CA01 CA06 CB01 DA01 DB03 EA02 EB00 ─────────────────────────────────────────────────── ─── Continued front page F-term (reference) 3K007 AB05 AB16 AB18 BA00 CA01 CA06 CB01 DA01 DB03 EA02 EB00
Claims (10)
表示部及び光応答部が積層され、光入力に応じて発光表
示が行われるよう構成されているとを特徴とする光入力
型発光表示素子。1. A light input, comprising: a pair of electrodes formed on a substrate; a light-emitting display unit and a light-responsive unit laminated on the substrate; and light-emitting display is performed according to light input. Type light emitting display device.
異なる膜で構成されている請求項１に記載の光入力型発
光表示素子。2. The light input type light emitting display element according to claim 1, wherein the light emitting display section and the light response section are formed of films made of different materials.
答かつ保持機能を有するよう構成されている請求項１に
記載の光入力型発光表示素子。3. The light input type light emitting display device according to claim 1, wherein the film forming the light response portion is configured to have a switching response and a holding function.
れ、第２の光により情報が消去されるよう構成されてい
る請求項１に記載の光入力型発光表示素子。4. The light-input type light-emitting display device according to claim 1, wherein the light-responsive portion is configured so that information is input by the first light and information is erased by the second light.
求項１に記載の入力型発光表示素子。5. The input type light emitting display device according to claim 1, wherein the optical display portion is composed of an organic thin film.
より可逆的に相転移する材料の膜により構成されている
請求項１に記載の光入力型発光表示素子。6. The light-input type light-emitting display device according to claim 1, wherein the light-responsive portion is composed of a film of a material that reversibly undergoes a phase transition by heat generated by light irradiation.
素を主成分とするよう構成した請求項６に記載の光入力
型発光表示素子。7. The light input type light emitting display device according to claim 6, wherein the film of the phase change material is configured to contain antimony and tellurium elements as main components.
この情報に対応した発光表示を行うよう構成した請求項
１に記載の光入力型発光表示素子。8. The optical input information is two-dimensional display information,
The light input type light emitting display device according to claim 1, wherein the light input type light emitting display device is configured to perform a light emitting display corresponding to this information.
に記載の光入力型発光表示素子。9. The substrate is transparent to visible light.
The light-input type light-emitting display device according to item 1.
可撓性を有するプラスチック基材を用いて構成されてい
る請求項１に記載の入力型発光表示素子。10. The input-type light emitting display device according to claim 1, wherein the substrate is transparent to visible light and is made of a flexible plastic substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001373363A JP4162885B2 (en) | 2001-12-06 | 2001-12-06 | Light input type light emitting display element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001373363A JP4162885B2 (en) | 2001-12-06 | 2001-12-06 | Light input type light emitting display element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2003173876A true JP2003173876A (en) | 2003-06-20 |
| JP4162885B2 JP4162885B2 (en) | 2008-10-08 |
Family
ID=19182091
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001373363A Expired - Fee Related JP4162885B2 (en) | 2001-12-06 | 2001-12-06 | Light input type light emitting display element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4162885B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012238696A (en) * | 2011-05-11 | 2012-12-06 | Konica Minolta Holdings Inc | Surface light source |
| WO2014046373A1 (en) * | 2012-09-19 | 2014-03-27 | 고려대학교 산학협력단 | Organic light-emitting diode provided with transparent electrode having conductive filaments and method for manufacturing same |
| KR101875740B1 (en) * | 2011-12-08 | 2018-07-06 | 엘지디스플레이 주식회사 | Organic light emitting diode display device |
-
2001
- 2001-12-06 JP JP2001373363A patent/JP4162885B2/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012238696A (en) * | 2011-05-11 | 2012-12-06 | Konica Minolta Holdings Inc | Surface light source |
| KR101875740B1 (en) * | 2011-12-08 | 2018-07-06 | 엘지디스플레이 주식회사 | Organic light emitting diode display device |
| WO2014046373A1 (en) * | 2012-09-19 | 2014-03-27 | 고려대학교 산학협력단 | Organic light-emitting diode provided with transparent electrode having conductive filaments and method for manufacturing same |
| US9570699B2 (en) | 2012-09-19 | 2017-02-14 | Korea University Research And Business Foundation | Organic light emitting device having transparent electrode where conducting filaments formed and method of manufacturing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JP4162885B2 (en) | 2008-10-08 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3281848B2 (en) | Display device | |
| JP4254240B2 (en) | Organic electroluminescent display and electronic device | |
| Ma et al. | Organic bistable light-emitting devices | |
| US6876007B2 (en) | Light emitting device driving by alternating current in which light emission is always obtained | |
| US7199521B2 (en) | Electroluminescence device | |
| CN100392888C (en) | Organic electroluminescent display device | |
| KR100527191B1 (en) | Organic electroluminescent display device using low resistance cathode | |
| US8907324B2 (en) | Organic light emitting display device having solar cell polarizing film | |
| JP2001043980A (en) | Organic electroluminescent element and display device | |
| JP2001102176A (en) | El display device and fabricating method thereof | |
| JP2003092191A (en) | Luminescent device and method for manufacturing the same | |
| CN100524890C (en) | Organic electroluminescent element, panel display and portable electronic device | |
| TWI323140B (en) | Light emitting device and manufacturing method therefor | |
| US20070236140A1 (en) | System for displaying images including electroluminescent device and method for fabricating the same | |
| TW200428688A (en) | Organic light-emitting display and its pixel structure | |
| US20080024059A1 (en) | System for displaying images incluidng electroluminescent device and method for fabricating the same | |
| KR20010113635A (en) | Constant current apparatus, display apparatus and method of driving same | |
| CN1784101A (en) | Double side display organic electroluminescence light emitting device | |
| JP4162885B2 (en) | Light input type light emitting display element | |
| EP1843411A1 (en) | System for displaying images including electroluminescent device and method for fabricating the same | |
| US7615778B2 (en) | Organic electroluminescent device, pixel structure, array and driving method thereof | |
| TW200809738A (en) | Driving circuitry | |
| Wenke | Organic light emitting diode (oled) | |
| JP4792634B2 (en) | Optical functional element, organic EL element, and organic EL display device | |
| KR20110032198A (en) | Organic light emitting diodes having solar cell |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20041104 |
|
| RD02 | Notification of acceptance of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7422 Effective date: 20041126 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20061220 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20070109 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20070312 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20070410 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20070522 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20080715 |
|
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20080723 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110801 Year of fee payment: 3 |
|
| R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110801 Year of fee payment: 3 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120801 Year of fee payment: 4 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120801 Year of fee payment: 4 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130801 Year of fee payment: 5 |
|
| LAPS | Cancellation because of no payment of annual fees |