JP2003152226A - Light emitting device - Google Patents

Light emitting device

Info

Publication number
JP2003152226A
JP2003152226A JP2001348117A JP2001348117A JP2003152226A JP 2003152226 A JP2003152226 A JP 2003152226A JP 2001348117 A JP2001348117 A JP 2001348117A JP 2001348117 A JP2001348117 A JP 2001348117A JP 2003152226 A JP2003152226 A JP 2003152226A
Authority
JP
Japan
Prior art keywords
light emitting
emitting device
metal layer
recess
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2001348117A
Other languages
Japanese (ja)
Other versions
JP4108318B2 (en
Inventor
Megumi Horiuchi
恵 堀内
Shinobu Nakamura
忍 中村
Kazuomi Tsutsui
和臣 筒井
Joji Sakai
譲二 酒井
Masaru Onoda
優 小野田
Masaaki Watanabe
正明 渡辺
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kawaguchiko Seimitsu Co Ltd
Citizen Electronics Co Ltd
Kawaguchiko Seimitsu KK
Original Assignee
Kawaguchiko Seimitsu Co Ltd
Citizen Electronics Co Ltd
Kawaguchiko Seimitsu KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kawaguchiko Seimitsu Co Ltd, Citizen Electronics Co Ltd, Kawaguchiko Seimitsu KK filed Critical Kawaguchiko Seimitsu Co Ltd
Priority to JP2001348117A priority Critical patent/JP4108318B2/en
Publication of JP2003152226A publication Critical patent/JP2003152226A/en
Application granted granted Critical
Publication of JP4108318B2 publication Critical patent/JP4108318B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/301Electrical effects
    • H01L2924/3025Electromagnetic shielding

Abstract

PROBLEM TO BE SOLVED: To solve the problems that, in the conventional light emitting device using a molded three-dimensional circuit body, the bondability between a metallic layer for electrode formed on the surface of an insulating substrate and a light emitting element is poor, because the metallic layer is composed of a glossy metallic layer and, in addition, a large amount of man-hours is required when the light emitting device is protected with a transparent resin and the luminous efficiency of the device is lowered due to the leakage of emitted light. SOLUTION: The glossy metallic layer is made to satisfy both a reflection characteristic and the bondability with the light emitting element by forming the layer in the recessed section of the molded three-dimensional circuit body and a metallic layer having superior bondability on the upper surface of the metallic layer. In addition, the working on the light emitting device is facilitated and the deterioration in luminous efficiency of the device is reduced by forming a wall section which prevents the flowing out of the transparent resin in the outer peripheral section of the upper surface of the metallic plate.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【発明の属する技術分野】本発明は立体回路成形体にL
ED等の発光素子を実装して成る発光装置に関する。
BACKGROUND OF THE INVENTION The present invention relates to a three-dimensional circuit molded body having an L shape.
The present invention relates to a light emitting device including a light emitting element such as an ED.

【0002】[0002]

【従来の技術】従来、立体回路成形体にLEDやLD等
の発光素子を実装して成る発光装置が提案されており、
本出願人も特開2001−36150号公報においてこ
の構造を提案している。図6は前記特開2001−36
150号公報に開示された従来技術における立体回路成
形体を用いた発光装置を示す斜視面図、図7はその断面
図である。
2. Description of the Related Art Conventionally, there has been proposed a light emitting device in which a light emitting element such as an LED or LD is mounted on a three-dimensional molded body.
The present applicant also proposed this structure in Japanese Patent Laid-Open No. 2001-36150. FIG. 6 shows the above-mentioned JP 2001-36A.
FIG. 7 is a perspective view showing a light emitting device using a three-dimensional circuit molded body according to the prior art disclosed in Japanese Patent Publication No. 150, and FIG. 7 is a sectional view thereof.

【0003】以下、従来技術における立体回路成形体を
用いた発光装置を説明する。図6及び図7において20
は樹脂成形された絶縁性基体である絶縁基板であり、概
絶縁基板20の上面部21の中央位置には上面側に開口
したすり鉢状の凹部22が設けられている。
A conventional light emitting device using a molded three-dimensional circuit will be described below. 20 in FIGS. 6 and 7.
Is an insulating substrate that is a resin-molded insulating base, and a mortar-shaped recess 22 that opens to the upper surface side is provided at the central position of the upper surface portion 21 of the generally insulating substrate 20.

【0004】前記絶縁基板20の上面部21には中央の
スリット23を挟んで左右にカソード電極24とアノー
ド電極25が形成されており、さらに前記カソード電極
24とアノード電極25とは前記絶縁基板20の側面を
経由して裏面まで延長され、外部接続を行うための下面
電極24a、25aを一体形成している。また前記凹部
22の内周面には前記カソード電極24及びアノード電
極25と一体形成された反射面26が形成されている。
上記のごとく絶縁基板20の表面に金属層よりなる各電
極が形成されることにより立体回路成形体を構成してい
る。
A cathode electrode 24 and an anode electrode 25 are formed on the upper surface 21 of the insulating substrate 20 so as to sandwich a central slit 23, and the cathode electrode 24 and the anode electrode 25 are formed on the insulating substrate 20. The bottom electrodes 24a and 25a for making external connection are integrally formed by extending to the back surface via the side surface of the. A reflective surface 26 integrally formed with the cathode electrode 24 and the anode electrode 25 is formed on the inner peripheral surface of the recess 22.
As described above, the three-dimensional circuit molded body is formed by forming each electrode made of a metal layer on the surface of the insulating substrate 20.

【0005】前記立体回路成形体の凹部22の底面には
発光素子である発光ダイオード30(以下LEDと略記
する)が接着材によって固着されており、前記LED3
0の一対の電極と、前記カソード電極24及びアノード
電極25とはボンディングワイヤ31,32によって接
続されている。そして前記LED30及びボンディング
ワイヤ31,32は、前記絶縁基板20の凹部22を含
む上面部21に形成された樹脂封止体である透明樹脂3
3によって保護されて発光装置40を構成する。
A light emitting diode 30 (hereinafter abbreviated as LED), which is a light emitting element, is fixed to the bottom surface of the concave portion 22 of the three-dimensional molded body by an adhesive material.
The pair of electrodes of 0 and the cathode electrode 24 and the anode electrode 25 are connected by bonding wires 31 and 32. The LED 30 and the bonding wires 31 and 32 are a transparent resin 3 which is a resin sealing body formed on the upper surface portion 21 of the insulating substrate 20 including the concave portion 22.
The light emitting device 40 is configured to be protected by 3.

【0006】前記絶縁基板20の表面に形成されるカソ
ード電極24、アノード電極25及び前記凹部22の内
周面に形成される反射面26はすべて光沢性Ag等の光
沢性金属層が形成されている。これは発光装置としての
発光効率を高めることを考慮してのことである。
The cathode electrode 24, the anode electrode 25 formed on the surface of the insulating substrate 20 and the reflection surface 26 formed on the inner peripheral surface of the recess 22 are all provided with a glossy metal layer such as gloss Ag. There is. This is in consideration of increasing the luminous efficiency of the light emitting device.

【0007】[0007]

【発明が解決しようとする課題】上記従来技術における
発光装置40においては、絶縁基板20の表面に形成さ
れる金属層は、LED30の電極であると同時に前記凹
部22の内周面に形成された反射面26としての機能を
有するため、一般に反射面の機能を優先して光沢性金属
層(例えば光沢性Ag層)を形成していた。
In the conventional light emitting device 40, the metal layer formed on the surface of the insulating substrate 20 is the electrode of the LED 30 and is formed on the inner peripheral surface of the recess 22 at the same time. Since it has the function as the reflection surface 26, the function of the reflection surface is generally prioritized to form the glossy metal layer (for example, the glossy Ag layer).

【0008】しかし、前記光沢性Ag層等の光沢性金属
層は、光沢性を有するため反射面としての性能は優れて
いるが、反面、前記LED30の一対の電極をボンディ
ングワイヤ31,32で接続する時のボンディング性が
劣るという問題があり、この結果、実装後の発光装置に
おいて電気的な接続の不安定さによる発光特性の劣化が
問題となっていた。
However, since the glossy metal layer such as the glossy Ag layer has glossiness and is excellent in the performance as a reflection surface, on the other hand, the pair of electrodes of the LED 30 is connected by the bonding wires 31 and 32. There is a problem that the bonding property is poor at the time of soldering, and as a result, deterioration of the light emitting characteristics due to instability of electrical connection in the light emitting device after mounting has been a problem.

【0009】又、前記発光装置40においては、透明な
樹脂封止体33を形成するのに金型を用いて成形するこ
とになるが、このことは製造装置が大掛かりになるとと
もに、LED30からの発光が前記絶縁基板20の上面
部21を覆う樹脂封止体33の側面から漏れることによ
って、発光効率が低下するという問題があった。
Further, in the light emitting device 40, a mold is used to form the transparent resin encapsulant 33, but this requires a large-scale manufacturing apparatus and the LED 30 emits light. There is a problem that the light emission efficiency decreases due to leakage of light emission from the side surface of the resin encapsulant 33 covering the upper surface portion 21 of the insulating substrate 20.

【0010】本発明は上記問題点に鑑み成されたもので
あり、反射特性とボンディング性の両者に優れ、かつ加
工が容易で、漏れ光による発光効率の低下を減少させた
発光装置の提供を目的とする。
The present invention has been made in view of the above problems, and provides a light emitting device which is excellent in both reflection characteristics and bondability, is easy to process, and reduces the decrease in luminous efficiency due to leaked light. To aim.

【0011】[0011]

【課題を解決するための手段】上記目的を達成するため
の、本発明における要旨は 凹部と、概凹部の周囲の上
面部とを有する絶縁性基体の表面に金属層を形成して立
体回路成形体を構成し、概立体回路成形体の凹部内に発
光素子を実装するとともに、前記上面部に形成された金
属層に前記発光素子をワイヤーボンディングし、かつ前
記凹部内を含む上面側を透明樹脂にて封止して成る発光
装置において、前記金属層として凹部内には反射層を構
成する光沢性金属層が形成され、前記上面部にはボンデ
ィング性の良好な金属層が形成されていることを特徴と
する。
In order to achieve the above object, the gist of the present invention is to form a three-dimensional circuit by forming a metal layer on the surface of an insulating substrate having a recess and an upper surface around the recess. A light-emitting element is mounted in the recess of the molded body, and the light-emitting element is wire-bonded to the metal layer formed on the upper surface, and the upper surface including the inside of the recess is transparent resin. In a light-emitting device sealed by means of, a glossy metal layer forming a reflection layer is formed in the recess as the metal layer, and a metal layer having good bonding property is formed in the upper surface portion. Is characterized by.

【0012】又、前記光沢性金属層は光沢性Ag層であ
り、前記ボンディング性の良好な金属層はAu層である
ことを特徴とする。
Further, the glossy metal layer is a glossy Ag layer, and the metal layer having a good bonding property is an Au layer.

【0013】又、前記立体回路成形体の上面部の外周部
には前記透明樹脂の流れ出しを防止するための壁部が形
成されていることを特徴とする。
Further, a wall portion for preventing the transparent resin from flowing out is formed on an outer peripheral portion of an upper surface portion of the three-dimensional circuit molded body.

【0014】[0014]

【発明の実施の形態】以下本発明の実施の形態を図面に
より詳述する。図1は本発明の第1の実施の形態である
立体回路成形体を用いた発光装置を示す斜視図、図2は
その断面図であり、図6、図7に示す発光装置の各要素
と同一の要素には同一番号を付し、説明を省略する。
BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described in detail below with reference to the drawings. FIG. 1 is a perspective view showing a light emitting device using a three-dimensional circuit molded body according to a first embodiment of the present invention, FIG. 2 is a sectional view thereof, and elements of the light emitting device shown in FIGS. 6 and 7. The same elements will be denoted by the same reference numerals and description thereof will be omitted.

【0015】図1及び図2において図6及び図7の従来
技術と異なるところは、従来技術が前記絶縁基板20の
表面に形成されるカソード電極24、アノード電極25
及び前記凹部22の内周面に形成される反射面26はす
べて光沢性Ag等の光沢性金属層が形成されているのに
対し、本発明では前記金属層として前記凹部22の内部
には反射面26を構成する光沢性金属層として光沢性A
g層12が形成され、前記上面部21にはボンディング
性の良好な金属層としてAu層11が形成されているこ
とである。
1 and 2 are different from the prior arts of FIGS. 6 and 7 in that the prior art forms a cathode electrode 24 and an anode electrode 25 formed on the surface of the insulating substrate 20.
In addition, while the reflective surface 26 formed on the inner peripheral surface of the recess 22 is formed with a glossy metal layer such as gloss Ag, in the present invention, as the metal layer, the inside of the recess 22 is not reflected. Gloss A as a glossy metal layer forming the surface 26
That is, the g layer 12 is formed, and the Au layer 11 is formed on the upper surface portion 21 as a metal layer having a good bonding property.

【0016】さらに、前記スリット23を前記絶縁基板
20の中央に設けずに上面部21に設けたものであり、
この構成ではスリット23が前記凹部22の内周面を避
けて形成されていることにより、前記凹部22の内周面
に形成された反射面26の面積が大きくなって反射効率
を高めている。そして前記LED30に接続された一方
のボンディングワイヤー32は前記スリット23を飛び
越してアノード電極25にボンディングされている。
Further, the slit 23 is provided in the upper surface portion 21 without being provided in the center of the insulating substrate 20,
In this configuration, the slit 23 is formed so as to avoid the inner peripheral surface of the recess 22, so that the area of the reflective surface 26 formed on the inner peripheral surface of the recess 22 is increased and the reflection efficiency is improved. The one bonding wire 32 connected to the LED 30 jumps over the slit 23 and is bonded to the anode electrode 25.

【0017】上記構成によれば、前記LED30の発光
は前記凹部22の内部に光沢性Ag層12によって形成
された、反射面26により効率よく反射されると同時
に、前記LED30に接続されたボンディングワイヤ3
1、32はボンディング性の良好なAu層11に対して
確りとボンディングされる。又、前記スリット23が前
記凹部22の内周面を避けて形成されていることによ
り、前記凹部22内の反射面26の面積が大きくなって
いるため、さらに出射効率を高めることが出来る。
According to the above structure, the light emitted from the LED 30 is efficiently reflected by the reflecting surface 26 formed by the glossy Ag layer 12 inside the recess 22, and at the same time, the bonding wire connected to the LED 30. Three
Nos. 1 and 32 are reliably bonded to the Au layer 11 having good bonding properties. Further, since the slit 23 is formed so as to avoid the inner peripheral surface of the concave portion 22, the area of the reflecting surface 26 in the concave portion 22 is increased, so that the emission efficiency can be further improved.

【0018】図3は本発明における他の実施の形態であ
る発光装置18の断面図であり、図2の発光装置10と
異なるところは前記絶縁基板20の上面部21の外周部
に前記透明樹脂33の流れ出しを防止するための壁部1
5を形成し、概壁部15の内側に透明樹脂33を流して
前記LED30及びボンディングワイヤ31,32を保
護したものである。
FIG. 3 is a cross-sectional view of a light emitting device 18 which is another embodiment of the present invention. The difference from the light emitting device 10 of FIG. 2 is that the transparent resin is formed on the outer peripheral portion of the upper surface 21 of the insulating substrate 20. Wall part 1 for preventing outflow of 33
5, the transparent resin 33 is made to flow inside the approximate wall portion 15 to protect the LED 30 and the bonding wires 31 and 32.

【0019】前記壁部15の形成方法としては、前記絶
縁基板20の上面部21に電極膜を形成した後に、エポ
キシ樹脂等の耐熱樹脂をスクリーン印刷して0,1mm
〜1mmの高さの壁部を形成する。尚この壁部15は透
明樹脂33の流れを防止すると同時に、側方への漏れ光
を防ぐ機能を必要とするため、遮光効果のある白色等に
することが望ましい。
As a method of forming the wall portion 15, after forming an electrode film on the upper surface portion 21 of the insulating substrate 20, a heat resistant resin such as an epoxy resin is screen-printed to a thickness of 0.1 mm.
Form a wall with a height of ~ 1 mm. Since the wall portion 15 needs to have a function of preventing the flow of the transparent resin 33 and at the same time preventing light leaking to the side, it is desirable that the wall portion 15 is made of white or the like having a light shielding effect.

【0020】図4、図5は本発明の絶縁基板20に金属膜
を形成する工程を説明するための立体回路成形体の断面
図である。図4は絶縁基板20にスリット23を設けた
状態で、前記ボンディング性の良好なAu層11にて、
カソード電極24、アノード電極25を形成した後、レ
ジスト膜(図示せず)で前記凹部22以外の部分を覆
い、凹部22の内周面のAu層11面上に光沢性Ag層
12を積層して反射面26を形成した後、レジスト膜を
剥離したものである。
FIGS. 4 and 5 are sectional views of a three-dimensional circuit molded body for explaining the step of forming a metal film on the insulating substrate 20 of the present invention. FIG. 4 shows the state in which the slits 23 are provided in the insulating substrate 20 and the Au layer 11 having good bonding properties.
After forming the cathode electrode 24 and the anode electrode 25, a portion other than the concave portion 22 is covered with a resist film (not shown), and the gloss Ag layer 12 is laminated on the Au layer 11 surface of the inner peripheral surface of the concave portion 22. After the reflective surface 26 is formed by the above, the resist film is peeled off.

【0021】又、図5は絶縁基板20にスリット23を
設けた状態で、前記光沢性Ag層12にて、カソード電
極24、アノード電極25を形成した後、レジスト膜で
前記凹部22の部分を覆い、凹部22以外の光沢性Ag
層12面上に前記ボンディング性の良好なAu層11を
積層した後、レジスト膜を剥離したものである。
Further, in FIG. 5, in the state where the slits 23 are provided in the insulating substrate 20, the cathode electrode 24 and the anode electrode 25 are formed on the glossy Ag layer 12, and then the concave portion 22 is covered with a resist film. Gloss Ag except for the cover and recess 22
The Au film 11 having good bonding properties is laminated on the surface of the layer 12 and then the resist film is peeled off.

【0022】上記図4、図5のいずれの方法でも、前記凹
部22内には反射面26を構成する光沢性金属層が形成
され、前記上面部21にはボンディング性の良好な金属
層が形成されていることになる。そして上記立体回路成
形体を用いると、比較的耐蝕性の劣る光沢性Ag層12
は透明樹脂33で保護され、耐蝕性に優れたAu層11
が外部接続電極として露出する構成となるため、耐蝕性
に優れた発光装置となる。
In either of the methods shown in FIGS. 4 and 5, a glossy metal layer forming the reflecting surface 26 is formed in the recess 22, and a metal layer having good bonding property is formed on the upper surface 21. Has been done. When the three-dimensional circuit molded body is used, the glossy Ag layer 12 having relatively poor corrosion resistance is obtained.
Is protected by the transparent resin 33 and has excellent corrosion resistance.
Since it is exposed as an external connection electrode, the light emitting device has excellent corrosion resistance.

【0023】[0023]

【発明の効果】上記のごとく本発明によれば、立体回路
成形体の凹部内には反射層を構成する光沢性金属層を形
成し、上面部にはボンディング性の良好な金属層を形成
することにより、反射特性とボンディング性の両者を満
足させるとともに、上面部の外周部には透明樹脂の流れ
出しを防止するための壁部を形成することにより、加工
が容易で、漏れ光による発光効率の低下を減少させた発
光装置の提供が可能となった。
As described above, according to the present invention, the glossy metal layer forming the reflective layer is formed in the recess of the three-dimensional molded body, and the metal layer having good bonding property is formed on the upper surface. By satisfying both the reflection property and the bonding property, and by forming a wall portion on the outer peripheral portion of the upper surface to prevent the transparent resin from flowing out, the processing is easy and the luminous efficiency due to leakage light is improved. It has become possible to provide a light emitting device with reduced deterioration.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の発光装置の実施の形態の斜視図であ
る。
FIG. 1 is a perspective view of an embodiment of a light emitting device of the present invention.

【図2】図1の発光装置の断面図である。FIG. 2 is a cross-sectional view of the light emitting device of FIG.

【図3】本発明の発光装置の実施の形態の断面図であ
る。
FIG. 3 is a sectional view of an embodiment of a light emitting device of the present invention.

【図4】本発明の立体回路成形体の断面図である。FIG. 4 is a cross-sectional view of a three-dimensional circuit molded body of the present invention.

【図5】本発明の立体回路成形体の断面図である。FIG. 5 is a cross-sectional view of a three-dimensional circuit molded body of the present invention.

【図6】従来の発光装置の斜視図である。FIG. 6 is a perspective view of a conventional light emitting device.

【図7】図6の発光装置の断面図である。7 is a cross-sectional view of the light emitting device of FIG.

【符号の説明】[Explanation of symbols]

10,18,40 発光装置 11 Au層 12 光沢性Ag層 15 壁部 20 絶縁基板 21 上面部 22 凹部 26 反射面 30 発光素子 33 透明樹脂 10,18,40 Light emitting device 11 Au layer 12 Glossy Ag layer 15 wall 20 insulating substrate 21 Top surface 22 recess 26 Reflective surface 30 light emitting element 33 transparent resin

───────────────────────────────────────────────────── フロントページの続き (72)発明者 中村 忍 山梨県南都留郡河口湖町船津6663番地の2 河口湖精密株式会社内 (72)発明者 筒井 和臣 山梨県南都留郡河口湖町船津6663番地の2 河口湖精密株式会社内 (72)発明者 酒井 譲二 山梨県南都留郡河口湖町船津6663番地の2 河口湖精密株式会社内 (72)発明者 小野田 優 山梨県南都留郡河口湖町船津6663番地の2 河口湖精密株式会社内 (72)発明者 渡辺 正明 山梨県南都留郡河口湖町船津6663番地の2 河口湖精密株式会社内 Fターム(参考) 5F041 AA03 DA07 DA12 DA19 DA36 DA39 DA43    ─────────────────────────────────────────────────── ─── Continued front page    (72) Inventor Shinobu Nakamura             2 6663 Funatsu, Kawaguchiko Town, Minamitsuru District, Yamanashi Prefecture               Kawaguchiko Precision Co., Ltd. (72) Inventor Kazuomi Tsutsui             2 6663 Funatsu, Kawaguchiko Town, Minamitsuru District, Yamanashi Prefecture               Kawaguchiko Precision Co., Ltd. (72) Inventor Joji Sakai             2 6663 Funatsu, Kawaguchiko Town, Minamitsuru District, Yamanashi Prefecture               Kawaguchiko Precision Co., Ltd. (72) Inventor Yu Onoda             2 6663 Funatsu, Kawaguchiko Town, Minamitsuru District, Yamanashi Prefecture               Kawaguchiko Precision Co., Ltd. (72) Inventor Masaaki Watanabe             2 6663 Funatsu, Kawaguchiko Town, Minamitsuru District, Yamanashi Prefecture               Kawaguchiko Precision Co., Ltd. F term (reference) 5F041 AA03 DA07 DA12 DA19 DA36                       DA39 DA43

Claims (5)

【特許請求の範囲】[Claims] 【請求項1】 凹部と、該凹部の周囲の上面部とを有す
る絶縁性基体の表面に金属層を形成して立体回路成形体
を構成し、該立体回路成形体の凹部内に発光素子を実装
するとともに、前記上面部に形成された金属層に前記発
光素子をワイヤーボンディングし、かつ前記凹部内を含
む上面側を透明樹脂にて封止して成る発光装置におい
て、前記金属層として凹部内には反射面を構成する光沢
性金属層が形成され、前記上面部にはボンディング性の
良好な金属層が形成されていることを特徴とする発光装
置。
1. A three-dimensional circuit molded body is formed by forming a metal layer on the surface of an insulating substrate having a recess and an upper surface around the recess, and a light emitting element is provided in the recess of the three-dimensional circuit molded body. In a light emitting device which is mounted, wire-bonds the light emitting element to a metal layer formed on the upper surface, and seals the upper surface side including the inside of the recess with a transparent resin, in the recess as the metal layer A light-emitting device, wherein a glossy metal layer forming a reflection surface is formed on the upper surface, and a metal layer having good bonding properties is formed on the upper surface portion.
【請求項2】 前記光沢性金属層は光沢性Ag層であ
り、前記ボンディング性の良好な金属層はAu層である
請求項1記載の発光装置。
2. The light emitting device according to claim 1, wherein the glossy metal layer is a glossy Ag layer, and the metal layer having good bonding properties is an Au layer.
【請求項3】 前記金属層には電極を分割するためのス
リットが設けられており、該スリットは前記上面部に形
成されている請求項1または請求項2記載の発光装置。
3. The light emitting device according to claim 1, wherein the metal layer is provided with a slit for dividing the electrode, and the slit is formed in the upper surface portion.
【請求項4】 前記立体回路成形体の上面部の外周部に
は前記透明樹脂の流れ出しを防止するための壁部が形成
されている請求項1又は2記載の発光装置。
4. The light emitting device according to claim 1, wherein a wall portion for preventing the transparent resin from flowing out is formed on an outer peripheral portion of an upper surface portion of the three-dimensional circuit molded body.
【請求項5】 前記絶縁性基体の表面に形成された金属
層は、前記光沢性金属層とボンディング性の良好な金属
層とが部分的に積層されて形成されていることを特徴と
する請求項1乃至4のいずれか1項記載の発光装置。
5. The metal layer formed on the surface of the insulating substrate is formed by partially laminating the glossy metal layer and a metal layer having good bonding properties. Item 5. The light emitting device according to any one of items 1 to 4.
JP2001348117A 2001-11-13 2001-11-13 Light emitting device Expired - Lifetime JP4108318B2 (en)

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JP4108318B2 JP4108318B2 (en) 2008-06-25

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