JP2003142775A - Near-field optical probe integrated semiconductor laser and optical recorder using it - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a near-field optical probe integrated semiconductor laser which can be arranged closely to an object, is high in mass-productivity, and can be assembled easily. SOLUTION: A surface emitting semiconductor laser has at least a pair of reflecting mirrors respectively composed of semiconductor layers formed on the main surface of a semiconductor substrate and having different conductivities, and an active layer interposed between the reflecting mirrors and having a narrower forbidden band width than the semiconductor layers have. A probe which generates near-field light is formed at a light emitting position on the upper surface of the semiconductor laser. In part of the semiconductor substrate other than the forming area of the semiconductor laser, a hole is formed through the substrate from the main surface to the rear surface, and power to the main surface side of the semiconductor laser is performed from the rear surface side through the hole and an electrode formed to a height not higher than the upper surface of the laser.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor laser provided with a near-field optical probe used for optical recording, optical measurement and the like, and an optical recording apparatus using the same.

[0002]

2. Description of the Related Art An electromagnetic field of light leaks out even in a structure that originally does not transmit light, such as a hole provided in a metal film, which has a wavelength equal to or shorter than the wavelength of light, or a pointed tip having a sharp pointed structure, and leaks into a space of about several tens of nanometers. A phenomenon in which a strong photoelectric magnetic field is formed is known, and it is considered to use a near-field optical probe utilizing this phenomenon as a light source for ultra-high-density optical recording or an ultra-sensitive surface sensor.

As a method for realizing such a near-field optical probe in a small size and at a low cost, it has been proposed to provide the near-field probe directly on the semiconductor laser as a light source. As an example, a metal film is provided on the surface of the surface emitting semiconductor laser,
There is a technique for obtaining near-field light by making a minute hole in this [see, for example, Journal of Applied Physics, "Applied Physics" Vol. 68, No. 12, page 1380 (December 1999)].

[0004]

In the conventional surface emitting laser provided with the near field optical probe, it is necessary to align the light emitting portion of the surface emitting laser with the hole for generating the near field light formed in the metal film. become. The alignment was performed by aligning the position of the focused ion beam with the center of the surface emitting laser. However, it is difficult to precisely perform such alignment with respect to a large number of elements formed in a wafer at the same time, and there is a problem in mass productivity.

Further, in a conventional semiconductor laser provided with a near-field optical probe, one electrode is on the main surface of the device,
The other electrode is provided on the back surface of the device. In a system using near-field light, it is necessary to arrange an element close to an optical disk or an object to be measured, and it is necessary to form the main surface side of the element as flat as possible. However, since one electrode is on the main surface of the element, there is a problem that a bonding wire or the like for flowing a current to the main surface becomes an obstacle when the probe is used in the vicinity of another object.

The object of the present invention is to solve the above-mentioned problems of the prior art and to place the object close to an object.
Another object of the present invention is to provide a near-field optical probe integrated semiconductor laser having high mass productivity and easy to assemble an applied device, and an optical recording device using the same.

[0007]

The typical ones of the inventions disclosed in the present application will be outlined below. (1) A pair of reflecting mirrors formed of semiconductor layers having different conductivity from each other formed on the main surface of a semiconductor substrate, and an active layer having a narrower band gap than the semiconductor layer sandwiched between the pair of reflecting mirrors. At least a surface-emitting semiconductor laser having, and a probe for generating near-field light formed at a light emission position on the upper surface of the surface-emitting laser are provided, and in a part of the semiconductor substrate other than the region where the surface-emitting laser is formed. A hole is provided from the main surface to reach the back surface opposite to the main surface, and the semiconductor layer on the top surface side of the surface emitting laser is energized from the back surface side of the substrate through an electrode formed through the hole reaching the back surface of the substrate. A near-field optical probe integrated semiconductor laser in which the electrodes are arranged at a height that does not reach the upper surface of the surface emitting semiconductor laser. (2) In item (1), the holes for energization are formed by performing etching from the main surface side and the back surface side of the semiconductor substrate to a depth of approximately ½ of the substrate thickness, respectively. The electrodes on the main surface side and the back surface side are both formed on crystal planes that intersect the main surface and the back surface to be etched at an obtuse angle. (3) The hole on the main surface side of item (2) is filled with an insulating solid such as resin, and the insulating solid supports a metal film provided at the bottom of the hole. (4) In item (1), the near-field optical probe is a vertex of a metal film formed on the light emitting surface of a surface emitting laser and having a triangular shape with a thickness and a radius of curvature of the vertex being equal to or less than the light wavelength. It is composed by. (5) In the item (4), the upper surface of the surface emitting laser other than the near-field optical probe is covered with a dielectric multilayer film having a reflectance higher than that of the region where the near-field optical probe is provided. . (6) In item (1), the near-field optical probe is formed by the same manufacturing process as the structure that defines the light emitting portion of the surface emitting laser.

According to the structure of item (1) above, the electrode necessary for passing a current from the semiconductor layer on the upper surface side of the surface-emitting laser to the surface-emitting laser penetrates the substrate from the back side of the substrate and has a main surface. Since it is formed so as not to project from the upper surface on the side, it becomes an obstacle when the recording medium is driven close to the main surface of the element equipped with the surface emitting laser and the near-field optical probe (upper surface of the surface emitting laser). There are no structures.

Such an electrode that conducts electricity from the back surface of the element to the principal surface side of the element is, specifically, as shown in item (2), holes for energization are formed by etching from the principal surface and the back surface of the substrate, respectively.
The side surface of the formed hole is formed on a surface that intersects the main surface and the back surface before etching at an obtuse angle. When a hole is formed by etching, the (100) main surface and the (-1)
The surfaces that intersect the back surface which is the (00) surface at an obtuse angle are (11
-1) (1-11) plane and (-111) (-1-1-1) plane. By forming an electrode on such an obtuse angle surface, disconnection of the electrode can be prevented. In addition, such a hole is filled with an insulating material such as resin as in item (3) to support the metal film at the bottom of the hole, and the flatness of the surface of the insulating material flattens the top surface of the element. It is possible to improve.

As a near-field optical probe, near-field light is generated by utilizing the action of surface plasmons of a metal film in the shape of a triangle whose thickness in the direction perpendicular to the substrate surface and radius of curvature of the apex are both equal to or less than the light wavelength. The structure of item number (4) is adopted. In this case, of the output light of the surface-emission laser, the light emitted from the portion other than the metal film becomes ineffective background light, but the surface-emission laser surface other than the metal film has a high-reflection insulating multilayer with a reflectance of 97% or more. With the structure of item number (5) covered with a film, it is possible to increase the intensity of the near-field light by reducing the background light by reflecting it in the laser element.

Further, by the process of item (6), the surface emitting laser and the near-field optical probe are formed in a self-aligned manner, so that there is no need for highly accurate alignment, and the near-field optical probe integrated semiconductor laser is mass-produced. Is possible.

[0012]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A near-field optical probe integrated semiconductor laser according to the present invention and an optical recording device using the same will be described in more detail with reference to the embodiments of the invention shown in the drawings.

One embodiment of the near-field optical probe integrated semiconductor laser of the present invention is shown in FIG. In FIG. 1, 101 is p
Type GaAs substrate, 102 to 108 are semiconductor layers formed on the upper surface (main surface) of the substrate 101 in this order, 102 is a lower p-type DBR (Distributed Bragg Reflector) layer to be a light reflecting mirror, 106
Is an active layer region (broadly defined active layer) composed of the lower spacer layer 103, the quantum well active layer 104, and the upper spacer layer 105, 1
07 is the n-type AlAs layer, 108 is the upper n-type D that serves as a light reflecting mirror
Reference numeral 109 is a BR layer, 109 is an insulating film DBR layer formed on the DBR layer 108 to be a light reflecting mirror, and 110 is an insulating film DBR layer 1.
A metal film, which serves as a near-field optical probe formed on 09, 118
Is an n-side electrode connected to the upper n-type DBR layer 109 and extending to the back surface side of the substrate 101, and 131 is a p-side electrode formed on the back surface of the substrate 101. The active layer region 106 includes the DBR layer 102,
It is a semiconductor layer sandwiched by 108 and having a narrower band gap than the semiconductor layers forming the DBR layers 102 and 108.

A method of manufacturing this structure will be described below. First,
By the molecular beam epitaxy method, AlAs and GaAs were alternately laminated for 30 cycles on the p-type GaAs substrate 101 so that the respective film thicknesses became 1/4 of the wavelength in the medium, and the carrier concentration was 1 × 10 ¹⁸ cm ^−3. Lower p-type DBR layer 102 to be
Was formed.

Next, undoped Al is formed on the DBR layer 102.
A lower spacer layer 103 of _0.22 Ga _0.78 As is formed, an undoped quantum well active layer 104 is formed thereon, and an upper spacer layer of undoped Al _0.22 Ga _0.78 As is further formed thereon.
By forming 105, an active layer region 106 having a film thickness of the in-medium wavelength was formed. The undoped quantum well active layer 104 has a film thickness of 80.
nm InGaAs quantum well layer and 150 nm Ga
As barrier layers were alternately laminated so that the quantum well layers were 3 layers and the barrier layers were 4 layers.

Next, on the active layer region 106, the carrier concentration is 1 × 10 ¹⁸ cm ⁻³ and the film thickness is 1/10 of the wavelength in the medium.
4. An n-type AlAs layer 107 to be 4 is formed, and further thereon,
Each film thickness is Al _0.9 Ga _{0.1 which is} 1/4 of the wavelength in the medium.
15 cycles of As and GaAs were alternately laminated to form an upper n-type DBR layer 108 having a carrier concentration of 1 × 10 ¹⁸ cm ⁻³ and a total film thickness of about 2 μm.

Next, on the wafer thus formed, silicon oxide and silicon nitride having a film thickness of ¼ of the wavelength in the medium, that is, two kinds of dielectric films are alternately laminated for four cycles to form an insulating film. The DBR layer 109 is used.

A metal film 110 of gold having a thickness of about 50 nm was deposited on the above structure using an electron beam resist. The metal film 110 serves as a near-field optical probe, and its pattern will be described later. To form the metal film 110, first, the uppermost silicon nitride film of the insulating film DBR layer 109 was removed by using an electron beam resist so as to have substantially the same shape as the pattern of the metal film 110. Using the electron beam resist again, a metal film 110 was deposited on the uppermost silicon nitride removed portion. The patterning of the metal film 110 was performed by a lift-off method of removing only the desired pattern of the electron beam resist, depositing the metal film 110, and then removing the remaining electron beam resist.

The reflectivity of the reflecting mirror of the surface emitting laser thus formed is 99.8% for the lower p-type DBR layer 102,
95.5% of upper n-type DBR layer 108, insulating film DBR layer 109
Was 97.3%, and the region where the uppermost silicon nitride film of the insulating film DBR layer 109 was removed was 40%. The combined reflectance of the upper n-type DBR layer 108 and the insulating film DBR layer 109 when viewed from the active layer side is 99.8%, and it is 96% in the region where the uppermost silicon nitride film is removed and gold is attached. It was

Due to such reflectance, most of the light irradiating the near field probe and its vicinity is reflected inside the surface emitting laser for reuse. As a result, the dual effects of improving the light emission efficiency of the device and reducing the ratio of background light to near-field light were obtained.

The shape of the metal film 110, which is a near-field optical probe, is shown in FIG. The shape is two triangles whose vertices face each other, and the radius of curvature of the vertices is 50 n of the thickness of the metal film 110.
The wavelength is almost equal to or smaller than the light wavelength, and the distance between the two vertices is almost the same. Near-field light is emitted from this interval.

At the same time when the metal film 110 is formed,
A ring-shaped gold metal film 132 surrounding the metal film 110 centered on the above interval was formed. The metal film 132 does not participate in laser light emission or near-field light emission and is used exclusively for manufacturing a light emitting portion of a semiconductor laser. That is, the relative position accuracy can be improved by forming the metal film 110 and the metal film 132 at the same time. By using such a metal film 132, the laser emitting portion and the metal film 110 are highly accurately aligned by self-alignment.

The process after forming the metal film 110 and the metal film 132 is shown in FIG. The metal film 110 and the metal film 132 are covered with a photoresist 111, and with the photoresist 111 and the metal film 132 as a mask, the laminated film is covered with AlA of the upper n-type DBR layer 108.
GaAs layer closest to the s layer 107, that is, Ga of the DBR layer 108
Etching was performed by reactive ion etching using carbon tetrachloride as an etching gas, leaving the bottom layer of the As layer. As a result, a cylindrical structure 112 having a diameter of 50 μm was formed.

Subsequently, as shown in FIG. 3, a photoresist 133 having a stripe shape with a width of about 20 .mu.m is formed on the other side of the cylinder, and the lower side p-type is formed by reactive ion etching using this as a mask. Etching was performed to reach the DBR layer 102. As a result, in the striped portion, the GaAs layer or AlAs layer 1 at the bottom of the DBR layer 108 is formed.
07 and the like become the stripe region 113.

After that, the photoresist 133 is removed, and about 4
Only the AlAs layer 107 was laterally oxidized by steam in a furnace at 00 ° C. to increase the resistance, and an oxidized region 114 was formed. However, this lateral oxidation was stopped midway so that the diameter of the center of the cylinder 112 was not reached to about 4 μm. Thus, as shown in FIG. 4 when viewed from above, the non-oxidized region having a diameter of about 4 μm is obtained.
115 was formed in the center of cylinder 112. As a result, the oxidized region
The top and bottom of 114 are electrically insulated, and the non-oxidized region 115 serves as a current injection region. Laser light is emitted from this region.

In the stripe region 113 formed by the above etching, the lower p-type DBR is formed by the oxidized region 114.
Since the layer 102 and the upper n-type DBR layer 108 are electrically separated, when a conductive film is formed on the stripe region 113, this conductive film is used as a lateral current path to the upper n-type DBR layer 108. be able to.

Then, G is formed adjacent to the stripe region 113.
A front side contact hole 116 was formed by performing chemical etching with a depth of about 15 μm from the surface (main surface) side of the aAs substrate 101 to the middle of the substrate 101.

Further, a silicon oxide insulating film 117 is vapor-deposited on the entire device to a thickness of about 100 nm, and a resist mask is used to attach an electrode to the lowermost GaAs layer of the upper n-type DBR layer 108 in the stripe region 113. A small hole was formed in the silicon oxide insulating film 117. At the same time, a hole was opened in the silicon oxide insulating film 117 at the bottom of the contact hole 116. Next, using the photoresist mask again, Ti / Pt / connecting from the bottom hole of the contact hole 116 to the small hole of the stripe region is connected.
The Au electrode 118 was formed. At this time, the electrodes 118 are formed on the slopes of the sides in the (01-1) direction of the front side contact holes 116, so that the electrodes are prevented from being disconnected due to the stepped portion of the substrate.

A polyimide resin 119 was applied to the substrate 101 (in the state of being formed on a wafer) formed as described above. Subsequently, as shown in FIG. 5, the wafer was attached to the quartz substrate 120 with the bonding surface of the substrate 101 facing downward. The quartz substrate 120 is provided with zinc oxide 121 and silicon oxide 122 by a sputtering method, and a polyimide resin 119 is deposited thereon by about 1 μm.
m applied. After bonding the wafer and the quartz substrate 120, the polyimide was baked and solidified. The quartz substrate 120 is used to maintain the strength of the wafer in the subsequent steps, and is removed after the predetermined steps.

The GaAs substrate 101 fixed to the quartz substrate 120 was polished from the back surface so that the total thickness of the wafer was 30 μm or less. Then, using the double-sided alignment technique, the backside contact hole 1 is formed at a position overlapping the frontside contact hole 116 on the backside of the substrate 101.
23 was set up. Back contact hole 123 is front contact hole 1
Below 16, the etching stops when it reaches the bottom of the front contact hole 116.

Next, a silicon oxide insulating film 117 covering the entire back surface of the substrate 101 was deposited to a thickness of about 100 nm. Then, after removing the silicon oxide insulating film 117 at the bottom of the back surface contact hole 123 and the silicon oxide insulating film 117 on the back side of the non-oxidized region 115 which becomes the light emitting portion of the surface emitting laser by using the photolithographic technique, An n-side electrode 118 and a p-side electrode 131 on the back side were formed.

As shown in FIG. 6, the electrode 118 in the contact hole portion is formed so that the front side electrode 118 and the back side electrode 118 are orthogonal to each other, and the two electrodes are in contact with each other at their intersections to be electrically connected. Front side contact hole 11 by AA line in FIG. 6
6 and cross section of the back side contact hole 123 and their vicinity, B ・
A cross section of the same portion along line B is shown in FIG. As shown in FIG. 7, each electrode 118 is formed on a surface that intersects the surface of the wafer at an obtuse angle.

Next, a submount 125 provided with gold electrodes 118 and 131 having a pattern corresponding to the electrodes 118 and 131 on the back surface of the wafer and solder 124 is prepared, and the wafer is soldered while aligning the positions of the electrodes 118 and 131 with this. I attached it.

Then, the zinc oxide film 121 was removed with a hydrochloric acid-based etching solution to separate the quartz substrate 120 from the wafer.
After the wafer polishing process, until mounting on the submount,
Since the wafer is attached to the quartz substrate 120 and handled,
No problem in handling occurred even if the device was thinned to about 30 μm. A metal film 110 is formed on the surface of the surface emitting laser.
Since a polyimide resin 119 having a thickness of about 1 μm that covers the film remains, it was removed by the reactive ion etching method. The polyimide resin 119 filling the removed front side contact hole 116 is used to form the metal film 11 provided at the bottom of the hole 116.
Eight is supported. The polyimide resin 119 is not limited to this,
Any insulating solid that can fill the contact hole 116 may be used. Through the above steps, the element shown in FIG. 1 was completed. Figure 8
Shows the device completed from the side with respect to the front in FIG.

According to this embodiment, the surface emitting semiconductor laser and the near-field optical probe can be integrated in a self-aligned manner, and the laser emitting portion and the near-field optical probe can be arranged with high positional accuracy. As a result, the utilization efficiency of the laser light is improved, the characteristics of the surface emitting laser can be improved, and the output of the near-field light can be increased. By integrating the semiconductor laser and the near-field optical probe in a self-aligned manner, highly accurate alignment becomes unnecessary and mass productivity can be improved.

Further, according to this embodiment, it is possible to form a near-field probe having a flat surface, and it is possible to easily realize an optical recording device in which the optical probe is installed close to the optical disk surface.

In the above description, the case of forming a single surface emitting laser has been described as an example, but the present invention also has the same effect in an array type element in which a plurality of elements are formed on a single chip. Needless to say. In the case of the array type, the advantages associated with the array are also generated, in particular, in that the element 118 is separated after the attachment to the submount is completed to facilitate the formation of the electrode 118 on the upper surface.

In this embodiment, the active layer is made of GaAs.
However, the present invention can be applied to a near-infrared surface emitting laser using GaInAs and a red surface emitting laser using InGaP or AlGaInP. Furthermore, surface emitting lasers such as GaN-based and ZnSe-based which emit blue or ultraviolet rays, 1.3 to 1.
It goes without saying that the present invention can also be applied to a surface emitting laser that emits a long wavelength in the 5 μm band.

Next, FIG. 9 shows an embodiment of an optical recording apparatus using the above-mentioned near-field optical probe integrated semiconductor laser. In FIG. 9A, 701 is an optical disk having a recording film formed on the lower surface, 702 is a slider on which the semiconductor laser is mounted, 703 is a recording head having a slider 702, and 704 is a recording head 703.
Is an actuator that moves the optical disc 701 in the radial direction of the arrow of the optical disc 701.

FIG. 9b shows the details of the recording head 703.
The near-field optical probe integrated semiconductor laser 707 is mounted on the slider 702 so that the near-field optical probe faces the recording film of the optical disk 701. Slider 702 is suspension 705
The other end of the suspension 705 is fixed to the piezoelectric element 706. Further, the piezoelectric element 706 is installed at the base of the recording head 703. The piezoelectric element 706 is used for tracking adjustment.

In addition to the above, the optical recording device is an optical disk 70.
The rotary mechanism of 1, a signal circuit for generating a recording signal, a control circuit for controlling the actuator 704 and the piezoelectric element 706, and the like are provided, but they are not shown.

During recording, the slider 702 moves the suspension 7
It is pressed against the surface of the optical disk 701 by the spring force of 05, but conversely, the levitation force by the air flow on the surface of the optical disk 701 that is generated by the rotation of the optical disk 701 acts, and the surface of the optical disk 701 and the semiconductor laser
A gap of several tens of nanometers is formed between the upper surface of the near-field optical probe 07 and the upper surface.

With the above structure, an optical spot with a diameter smaller than the wavelength of light is emitted from the optical disc 701 from the near-field optical probe.
Is irradiated onto the recording film, and ultra-high density optical recording is performed.

[0044]

According to the present invention, by integrating the surface emitting semiconductor laser and the near-field optical probe in a self-aligning manner,
Both can be arranged with high precision without high-precision alignment. Thereby, the utilization efficiency of the laser light can be improved, and the characteristics of the surface emitting laser can be improved and the output of the near-field light can be increased. Since high-precision alignment is unnecessary, mass productivity can be improved. Furthermore, since the upper electrode of the semiconductor laser can be made to reach the back surface without protruding to the front surface of the semiconductor laser,
It becomes possible to flatten the surface of the semiconductor laser provided with the electrode probe. It becomes possible to install such a near-field optical probe integrated semiconductor laser close to the optical disk surface, and it is possible to realize an ultra-high-density optical recording device using an optical spot smaller than the wavelength of light.

[Brief description of drawings]

FIG. 1 is a sectional view for explaining an embodiment of the invention of a near-field optical probe integrated semiconductor laser according to the present invention.

FIG. 2 is a diagram for explaining a manufacturing process of the near-field optical probe integrated semiconductor laser of the present invention.

FIG. 3 is another diagram for explaining the manufacturing process of the near-field optical probe integrated semiconductor laser of the present invention.

FIG. 4 is a top view for explaining an oxidized region and a non-oxidized region formed by the process of FIG.

FIG. 5 is still another drawing for explaining the manufacturing process of the near-field optical probe integrated semiconductor laser of the present invention.

FIG. 6 is a top view for explaining a contact hole formed by the process of FIG.

7 is a cross-sectional view of the contact hole shown in FIG.

FIG. 8 is a sectional view in another direction for explaining the near-field optical probe integrated semiconductor laser of the present invention.

FIG. 9 is a perspective view for explaining an optical recording device of the present invention.

[Explanation of symbols]

101 ... P-type GaAs substrate, 102 ... Lower p-type DBR layer, 103
... lower spacer layer, 104 ... quantum well active layer, 105 ... upper spacer layer, 106 ... active layer region, 107 ... n-type AlAs layer, 10
8 ... Upper n-type DBR layer, 109 ... Insulating film DBR layer, 110 ... Metal film, 114 ... Oxidized region, 115 ... Non-oxidized region, 116 ... Front side contact hole, 117 ... Silicon oxide insulating film, 118, 131 ... Electrode, 123 ... Backside contact hole, 124 ... Solder, 125 ... Submount 701 ... Optical disc, 702 ... Slider, 703 ... Recording head, 707 ... Near-field optical probe integrated semiconductor laser.

─────────────────────────────────────────────────── ─── Continuation of front page (51) Int.Cl. ⁷ Identification code FI theme code (reference) G12B 21/06 G12B 1/00 601C F term (reference) 5D119 AA11 AA22 AA38 BA01 CA06 EB02 FA05 FA16 JA34 MA06 5D789 AA11 AA22 AA38 BA01 CA06 CA21 CA22 CA23 EB02 FA05 FA16 JA34 MA06 5F073 AA65 AA74 BA04 CA07 CB22 DA21 DA27

Claims (5)

[Claims] 1. A pair of reflecting mirrors formed of semiconductor layers having different conductivity from each other formed on a main surface of a semiconductor substrate, and an active band gap narrower than the semiconductor layer sandwiched by the pair of reflecting mirrors. A surface emitting semiconductor laser having at least a layer, and a probe for generating near-field light formed at a light emitting position on the upper surface of the surface emitting semiconductor laser, the probe being provided in a region other than the region where the surface emitting semiconductor laser is formed. A hole is formed in a part of the semiconductor substrate so as to reach from the main surface to a back surface opposite to the main surface, and an electrode for conducting electricity from the back surface side to the semiconductor layer on the upper surface side of the surface emitting semiconductor laser is formed through the hole. The near-field optical probe integrated semiconductor laser, wherein the electrode is arranged at a height that does not reach the upper surface of the surface emitting semiconductor laser. 2. The holes for energization are formed by etching from the main surface side and the back surface side of the semiconductor substrate to a depth of about ½ of the substrate thickness, respectively. The near-field optical probe integrated semiconductor laser according to claim 1, wherein the electrodes on the side and the back surface are both formed on a crystal plane intersecting an obtuse angle with respect to a surface before etching is started. 3. The near-field optical probe is a vertex of a metal film formed on the light-emitting surface of the upper surface of the surface-emitting semiconductor laser and having a triangular shape whose thickness and radius of curvature of the vertex are equal to or less than the light wavelength. The near-field optical probe integrated semiconductor laser according to claim 1, wherein 4. The near-field light probe according to claim 1, wherein the near-field light probe is formed by the same manufacturing process as the structure that defines the light emitting portion of the surface emitting laser. Probe integrated semiconductor laser. 5. A near-field optical probe integrated semiconductor laser according to claim 1, a slider for providing a gap between an upper surface of the near-field optical probe of the semiconductor laser and a surface of an optical disk, and a support for the slider. And a suspension having a spring force that pushes the slider against the surface of the optical disc, a recording head including the semiconductor laser, the slider and the suspension, and an actuator that moves the recording head in the radial direction of the optical disc. An optical recording device characterized by: