JP2003141201A - Simulation method, and design method of high frequency power amplifier using the simulation method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To judge whether or not the leaked power of adjacent channel satisfies a required specification at a design stage. SOLUTION: Components and internal wiring of a high frequency power amplifier are tentatively determined, modulation signal response characteristics of the high frequency power amplifier are simulated and success or failure is judged by collating a simulation result with a target specification. When the simulation result is judged as failure, the components and the internal wiring are changed and processes of tentative determination, simulation and judgment of the success or failure are repeated.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a simulation method for designing a high frequency power amplifier and a method for designing a high frequency power amplifier using the simulation method.

[0002]

2. Description of the Related Art In Japanese Patent Laid-Open No. 6-276039, the S-parameter of a transistor is measured at a plurality of bias points, the S-parameter on this load line is investigated under the assumption of a load resistance value, and the power obtained based on this is examined. A method of designing a high frequency circuit is disclosed in which an optimum load is determined by obtaining gain and input / output power characteristics, and an input / output circuit is designed using a small signal simulator so as to realize the optimum load. Japanese Patent Laid-Open No. 9-1666
No. 0 discloses a method for simulating a stimulation signal represented by one or more carriers with a time-varying modulation envelope. Japanese Patent Laid-Open No. 2000-67099
Discloses an equipment manufacturing support system capable of ordering parts constituting equipment and creating a manufacturing drawing necessary for equipment manufacturing based on design information.

[0003]

The number of mobile phone terminals shipped has grown rapidly in recent years. The demand for high-frequency power amplifier modules as a component is also rapidly increasing. The mobile phone terminal market is in a revolutionary period in which next-generation systems such as W-CDMA are parallel to conventional systems such as PDC. For this reason, the specifications required for high-frequency power amplifier modules of mobile phone terminal manufacturers are updated every six months with the generation of terminal products, and are changing rapidly. Manufacturers of high-frequency power amplifier modules need to develop new products frequently, and shortening the development period and reducing development costs are issues. However, in the conventional high frequency power amplifier module development, it was difficult to reduce the period and cost due to the problem of the design method. The problem is that it cannot be determined at the design stage whether the module characteristics meet the target specifications. Whether or not the target specifications are met will be determined by the module prototype after the design is completed. Prototyping requires a period of several months and a reasonable cost. If the prototype results do not meet the target specifications, redesign and prototype will double the period and cost. For example, JP-A-6-27
In the designing method of 6039, the input / output power characteristic of the amplifier is predicted from the actual measurement value of the small signal characteristic of the device, but this method has a problem that the modulation signal response of the amplifier cannot be predicted. High-frequency power amplifier modules for mobile phone terminals are required to have low distortion amplification of complicated modulation signals. The adjacent channel leakage power ratio, which is a measure of distortion, is an essential specification item for high frequency power amplifier modules. However, in this conventional technique, the adjacent channel leakage power ratio cannot be predicted, and it cannot be determined whether the module characteristics satisfy the target specifications.

Further, Japanese Patent Laid-Open No. 9-16660 discloses a method of simulating the modulation signal response of an amplifier.
This method has a problem that if the number of elements of the amplifier increases, the amount of calculation becomes huge and calculation becomes impossible. In order to accurately simulate the characteristics of the high frequency power amplifier module, it is necessary to consider the parasitic effect of components and the shape effect of internal wiring. If these are incorporated in the module equivalent circuit as parasitic elements, the number of elements in the equivalent circuit increases. For example, in a high-frequency power amplifier module of two-stage amplification, the number of equivalent circuit elements including parasitic elements is several hundreds. In the conventional technology, the modulation signal response of this module equivalent circuit requires a large amount of calculation and cannot be simulated, and the adjacent channel leakage power ratio cannot be predicted.

It is difficult to reduce the development period and the development cost of the high frequency power amplifier module because it is a problem peculiar to the above-mentioned module design. Even if a design support system used in other fields is simply introduced, its effect cannot be expected. . For example, Japanese Unexamined Patent Publication No. 2000-67099 discloses a design support system capable of automatically ordering parts and drawing drawings based on the design result. However, this system does not solve the problem peculiar to the above module design. The effect of shortening the development period is about a few days.

There are other adverse effects of the problem that it is not known at the design stage whether the module characteristics meet the target specifications. The module maker cannot answer to the terminal maker whether it can supply the product according to the required specifications until the development for several months is completed.

Further, the high frequency power amplifier module maker cannot confirm the parts specifications of mass-produced products until the development for several months is completed, and cannot present them to the parts maker.

One of the objects of the present invention is to shorten the development period of the high frequency power amplifier by evaluating whether or not the adjacent channel leakage power ratio satisfies the target specification in the simulation method of the high frequency power amplifier. It is to reduce the development cost.

Another object of the present invention is to provide a method for designing a high frequency power amplifier, which receives a specification request from a terminal maker through a telecommunication line and transmits the characteristics to the terminal maker through the telecommunication line. By ordering the components from a component manufacturer, it is possible to shorten the development period and the development cost of the high frequency power amplifier.

[0010]

One of the typical simulation methods of the present invention is a simulation method for obtaining a modulated signal response of a circuit, in which an unmodulated signal is input to calculate a circuit equation of the circuit. It has a step of calculating. Another one of the typical ones of the simulation methods of the present invention is a simulation method for obtaining a modulated signal response of a circuit, which includes a step of calculating an unmodulated signal response of the circuit, and a calculation of the unmodulated signal response. It is characterized by including a step of calculating the transfer admittance of the circuit using the result and a step of calculating the modulated signal response using the calculation result of the transfer admittance. In addition, one of the typical methods of designing a high-frequency power amplifier of the present invention includes a step in which a server receives the specifications of the high-frequency power amplifier through a telecommunication line, and a computer in accordance with the above specifications received by the server. Based on the components and wiring of the high frequency power amplifier, simulating the characteristics of the high frequency power amplifier, and the server transmitting the characteristics through the telecommunication line. .

[0011]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 shows an outline of the design procedure of a method of designing a high frequency power amplifier module according to the present invention. First, the target specification of the module is determined (1). If the required specifications are given by the terminal manufacturer, use them as the target specifications. The target specifications include items such as operating frequency, power supply voltage, output power, power gain, power added efficiency, and adjacent channel leakage power ratio. Next, the components and internal wiring of the module are provisionally determined (2). If there is a past design example whose characteristics are close to the target specifications, the component parts and internal wiring are provisionally determined by making corrections based on the past design example. Next, an equivalent circuit of the provisionally determined module is created (3). Parasitic effects of component parts and shape effects of internal wiring are expressed as parasitic elements and incorporated into the module equivalent circuit. Next, the characteristic simulation of the module equivalent circuit is performed (4). Since the adjacent channel leakage power ratio is included in the target specification items, it is necessary to simulate the modulation signal response. The simulation method of the present invention can be used to execute a modulation signal response simulation at high speed and with high accuracy. Considering the central value, maximum value, and minimum value of each equivalent circuit parameter, changing the combination and performing simulation,
Calculate maximum and minimum values. Next, a pass / fail judgment is made by collating the simulation result with each item of the target specification (5).
If the judgment result is acceptable, the design is completed (6). If the judgment result is unsuccessful, the process returns to the tentative decision stage of module component parts and internal wiring (2), and tentative decision, equivalent circuit creation,
The process of characteristic simulation and acceptance / rejection is repeated.

According to the designing method of the present invention, it can be determined at the designing stage whether the adjacent channel leakage power ratio satisfies the target specification. The central value, maximum value, and minimum value of module characteristics can be calculated, and the central value, maximum value, and minimum value of component specifications can also be determined. It eliminates the need for re-design and re-trial production, and can reduce the development period and development cost of high-frequency power amplifier modules by half.

Next, a high frequency circuit simulation method used in the high frequency power amplifier module designing method of the present invention will be described.

In the high frequency circuit simulation method, the reason why the calculation amount becomes huge and calculation becomes impossible when the number of elements of the circuit increases is the non-stationary term of the modulation signal envelope current. In this case, for each time step of the envelope, the envelope current flowing through each element is calculated from the envelope voltage value at that time step and the envelope voltage change amount from the previous time step. For example, when the envelope voltage V (t) applied to the capacitor, the envelope current I (t) is expressed by the equation [1].

[0015]

[Equation 1] Here, C is the capacitance value, and ω is the angular frequency of the carrier wave. The first term on the right side is a steady term determined by the envelope voltage value at that time step, and the second term is a non-steady term that depends on the envelope voltage change amount from the previous time step. In order to calculate this non-stationary term, it is necessary to repeatedly solve the circuit equation for the number of time steps. Complex modulation schemes used in mobile phones require a large number of time steps to represent the envelope. For example, 1000 steps or more are required to represent the modulation signal envelope of W-CDMA. Therefore, if a simulation method considering the non-stationary term is used, even if the number of elements is small, the calculation time is long, and if the number of elements is large, calculation becomes impossible.

The physical meaning of the non-stationary term will be described with reference to the case where a sinusoidal modulation signal is applied to a capacitor. In this case, the envelope voltage V (t) is expressed by equation [2] and the envelope current I
(t) is given by equation [3]. Here, Vo is the amplitude of the sine wave, and ωo is the angular frequency of the sine wave.

[0017]

[Equation 2]

[Equation 3] The second term on the right side of equation [3] is the non-stationary term. The non-stationary term can be interpreted as the contribution to the envelope current of the element admittance change caused by the frequency change due to the modulation. The actual modulated signal is more complex and has a certain frequency bandwidth. The frequency dependence of the element admittance within that bandwidth is taken into account by the non-stationary term.

However, since the high-frequency power amplifier is designed so that the characteristics become flat in the modulation signal band, the component parts that greatly change the characteristics in the modulation signal band are not used. Typically, the admittance of the components does not change by as much as 1% within the modulation signal band. On the other hand, since the influence of the parasitic effect of the component parts is not uncommon even when the admittance exceeds 10%, it is advantageous to add a parasitic element to the equivalent circuit even if the non-steady-state term is omitted, for higher accuracy. In addition, as described below, if the non-stationary term is omitted, the speed can be significantly increased.

The present invention uses the approximation that the envelope current flowing through each element is determined only by the envelope voltage value of the time step. Using this approximation, the envelope current I (t) flowing through the capacitor is expressed by equation [4]. When generalized to include other passive elements and semiconductor elements, the envelope current I (t) flowing through the element is expressed by equation [5].

[0020]

[Equation 4]

[Equation 5] Here, Y (ω, v) is the admittance of the element, and v is the absolute value of the envelope voltage, that is, the voltage amplitude of the modulation signal. Since the response of each element does not include a non-stationary term, if the envelope voltage of the high frequency circuit input terminal is determined, the envelope voltage and the envelope current of each element are also uniquely determined. In this case, the envelope voltage Vin (t) of the high-frequency circuit input terminal and the envelope current Iout of the output terminal
(t) is related by equation [6]. Here, Ym (ω, vin) is the transfer admittance of the high frequency circuit, and vin is the absolute value of the input envelope voltage, that is, the voltage amplitude of the input signal. This transfer admittance Ym is an eigenfunction of the high frequency circuit, and Equation 6 can be applied to any input signal. Especially when applied to the case of inputting an unmodulated carrier, the equation [7] is obtained.

[0021]

[Equation 6]

[Equation 7] Here, Vin is an input complex voltage and Iout is an output complex current. In the present invention, the modulation signal response of the high frequency circuit is calculated using the equations [6] and [7].

FIG. 2 shows the procedure for calculating the output power spectrum when the modulation signal is input using the simulation method of the present invention. First, solve the circuit equation at the time of non-modulation input by the harmonic balance method. The harmonic balance method is one of methods for simulating a non-linear circuit such as a high-power amplifier. The components of the non-linear circuit are divided into non-linear elements such as transistors and linear elements such as resistors and capacitors. Time domain analysis is performed for non-linear elements and frequency domain analysis is performed for linear elements. By using the Fourier transform at both connection points, the response of the entire circuit can be determined without self-contradiction. Using this harmonic balance method,
Calculate the input complex voltage Vin and the output complex current Iout when the input voltage amplitude vin is swept (7). The sweep range of vin is set wider than the voltage amplitude fluctuation range of the modulation signal. Next, the transfer admittance Ym (vin) of the high-frequency circuit at each input voltage amplitude vin is calculated using equation [7] (8). Then, using the equation [6], the envelope current Iout (t) at the output terminal is calculated from the envelope voltage Vin (t) and Ym (vin) of the modulation input signal (9). Since Ym (vin) is table data, it is used after being interpolated. Finally, the output power Pout (t) is obtained from the output terminal envelope current Iout (t) and the load resistance value R, and this Pout (t) is Fourier transformed to obtain the output power spectrum Pout (f) (10).

Using the simulation method of the present invention, the circuit equation can actually be solved only in the case of unmodulated input. Since it is not necessary to solve the circuit equation for each unit time as in the conventional case, the amount of calculation can be greatly reduced and high-speed simulation can be performed.

Further, even when the number of elements of the equivalent circuit reaches several hundreds, the modulation signal response can be simulated, so that the adjacent channel leakage power ratio can be calculated. The one-stage amplifier simulation, which conventionally took several hundred minutes, can be completed in several minutes by using the simulation method of the present invention, and the two-stage amplifier simulation, which could not be calculated in the past, can be executed in about 10 minutes.

Next, an outline of the method of designing the high frequency power amplifier of the present invention is shown in FIG. The main operator of this design method is the high frequency power amplifier module manufacturer 11. The high frequency power amplifier module maker 11 determines whether or not the adjacent channel leakage power ratio satisfies the target specification by implementing the simulation method of the present invention at the module design stage. In addition, the high frequency power amplifier module manufacturer 11
Presents the characteristics of the high-frequency power amplifier obtained by the simulation method of the present invention to the mobile phone terminal manufacturer 12 and answers in a short time as to whether or not the required specifications of the mobile phone terminal manufacturer 12 can be realized. To do. Further, the high frequency power amplifier module maker 11 presents the component specifications determined by using the simulation method of the present invention to the high frequency component maker 13 and makes a provisional order for the component specifications of the mass-produced product at an early stage.

FIG. 4 shows a process flow of the method of designing the high frequency power amplifier module of the present invention. The high frequency power amplifier module maker 11 receives the required specification presentation from the mobile phone terminal maker 12 and designs the module using the simulation method of the present invention. When the design is completed, the module characteristics of the design result are presented to the mobile phone terminal manufacturer 12. In addition, the parts specifications resulting from the design are presented to the high-frequency parts manufacturer 13 to inquire about the prices at the time of mass production. When the mass-production price response is obtained from the high-frequency component manufacturer 13, the high-frequency component manufacturer 13 is selected based on the response. Also, the module price at the time of mass production is presented to the mobile phone terminal manufacturer 12. Upon receiving a sample request from the mobile phone handset manufacturer 12, the module prototype production is started. In addition, a temporary order for mass-produced parts is placed with the high-frequency parts manufacturer 13.

FIG. 5 shows an example of the configuration of a system used in the method of designing a high frequency power amplifier according to the present invention. The device 32 of the high frequency power amplifier module maker, the device 33 of the mobile phone terminal maker, and the device 34 of the high frequency component maker each include input / output units 35, 36 and 37 for operating the system, and The input / output section is connected via the Internet 38. Equipment of high frequency power amplifier module manufacturer 32
Includes a server 39 for system operation. FIG. 7 shows an example of the structure of a data file used in the method of designing a high-frequency power amplifier according to the present invention. The data file 40 in the server 39 included in the device 32 of the high-frequency power amplifier module maker includes a module simulator 41 for high-speed simulation of module characteristics, a module design database 42 that collects past design results, authentication data and past transaction records. Data file of mobile phone handset manufacturer containing
43 and a data file 44 of the high frequency component manufacturer are included.

A specific example of the method of designing the high frequency power amplifier of the present invention will be described. An example of the procedure of this design method is shown in FIG.
8 to 15 show examples of input / output screens at each stage.

First, the operator of the mobile phone terminal maker 12 inputs the required specifications (14). When the operator uses the authentication key to access the required specification input screen (FIG. 8) of the server, a list of specification items is displayed. When the operator inputs the required specifications in the numerical field of the table and performs the transmission process, the required specification data is transferred to the server. The required specification data received from the mobile phone terminal manufacturer 12 is automatically collated with the module database by the server (15), and the past design example closest to the required specification is extracted from the module database. Then, it is automatically inspected whether each item of the extracted past design example satisfies the required specifications (16). If there is an item that does not meet the required specifications, the data will be sent to the next module design stage (17). If all the required specifications are met, design is not required, so the next module characteristic presentation stage (2
Data is sent to 5).

When the data is sent to the module design stage (17), the operator of the high frequency power amplifier module manufacturer 11 designs the module (17). When the operator uses the authentication key to access the required specification display screen (FIG. 9) of the server, the required specifications and a list of extracted items of the past design example are displayed (19). Items that do not meet the required specifications of past design examples are displayed with hatching. Based on this information, the correction content is determined, and first, the circuit connection is temporarily determined on the circuit connection change screen (FIG. 10) (20). On this screen, the circuit connection diagram of the past design example is displayed, and it is possible to add and delete elements and change the connection. Next, the parameters are temporarily determined on the parameter change screen (FIG. 11) (21). This screen displays a list of parameter values of each element. When the parameter change is completed, the simulation is executed (22). The simulation result is automatically added to the module database.
(twenty three). Next, it is automatically inspected (24) whether each item of the simulation result meets the required specifications. If all the required specifications are met, the design is completed, so data is sent to the next module characteristic presentation stage (25). If there is an item that does not meet the required specifications, the required specifications display screen (Fig. 9) is re-displayed (19), and the simulation result of this time is displayed instead of the past design example, so design modification / simulation is executed again. To do.

Next, the high frequency power amplifier module manufacturer
Eleven operators will present the design results. When the operator uses the authentication key to access the module characteristic presentation screen (FIG. 12) of the server, a list of required specifications and simulation result items is displayed. Send processing on this screen (25)
Then, the simulation result is transferred to the mobile phone terminal manufacturer 12. The parts list used in the simulation is displayed on the parts price inquiry screen (FIG. 13). When the transmission process is performed on this screen (26), the component specifications are transferred to the high frequency component manufacturer 13.

Next, the operator of the high frequency component manufacturer 13 responds (27) to the component price. When the operator uses the authentication key to access the parts price response screen (FIG. 14) of the server, the parts specifications / price list is displayed. When the operator inputs in the price field and performs transmission processing, the component price data is transferred to the server. The price data received from the high frequency component manufacturer 13 is
It is automatically accumulated in the server (28). When a plurality of high frequency component manufacturers 13 can be selected, the prices are compared and the manufacturer is automatically selected. The module price data obtained by the integration is automatically transferred to the mobile phone terminal manufacturer 12 (29).

Next, the operator of the mobile phone terminal maker 12 makes a sample request (30). When the operator uses the authentication key to access the sample request screen (FIG. 15) of the server, a list of required specifications and simulation result items is displayed. The module price is also displayed if the total is completed. Performing the send process on this screen sends a sample request to the server. Upon receiving the sample request, the server automatically issues a trial production start instruction to the trial production department of the high frequency power amplifier module maker 11. Also, a temporary order for mass production parts is automatically issued to the high frequency parts manufacturer 13 (31).

When the method of designing a high frequency power amplifier module of the present invention is used, it is possible to determine whether or not the module characteristics meet the target at the design stage, so that the development period and the development cost can be reduced by half. Also, since it is possible to answer to the mobile phone terminal manufacturer at the design stage whether or not it is possible to supply products that meet the required specifications, this will lead to expansion of sales channels. Further, since the specifications of mass-produced parts can be presented to the high-frequency parts maker at the design stage, the cost of parts can be reduced.

Although the invention made by the present inventor has been specifically described based on the embodiments, the present invention is not limited to the above embodiments, and various modifications can be made without departing from the scope of the invention. Needless to say.

For example, in the simulation method of the present invention, if it is possible to evaluate whether or not the adjacent channel leakage power ratio satisfies the required specifications at the design stage of the high frequency power amplifier, the requirements explained in the above embodiments. May be partly deleted. Further, as long as the method achieves the object of the present invention and has substantially the same effect, some of the requirements described in the above embodiment may be modified.

The design method of the high frequency power amplifier of the present invention is as follows:
It is not necessary to have all of the steps described in the above embodiment, and some of them may not be included. For example, if the object of the present invention can be substantially achieved, the design method may be such that the high frequency power amplifier module maker 11 has no relationship with the mobile phone terminal maker 12,
A design method in which the high frequency power amplifier module maker 11 does not have a relationship with the high frequency component maker 13 may be used. Further, as long as the object of the present invention can be substantially achieved, some of the steps described in the above embodiment may be modified.

[0038]

By using the simulation method of the present invention, it is possible to judge whether or not the adjacent channel leakage power ratio satisfies the target specification at the design stage, and there is no need to redesign or re-trial. Therefore, development of a high frequency power amplifier is possible. It is possible to shorten the period and reduce the development cost. As a result, even when the number of elements of the equivalent circuit reaches several hundreds, the modulation signal response can be simulated, and the adjacent channel leakage power ratio of the high frequency power amplifier can be calculated with high accuracy and high speed.

When the method for designing a high frequency power amplifier of the present invention is used, it is possible to determine whether or not the characteristics of the high frequency power amplifier meet the required specifications at the design stage, so that the development period and the development cost can be reduced, and If you answer to the mobile phone terminal manufacturer at the design stage whether you can supply products that meet the specifications, you can expect an increase in orders. Also, if the specifications of mass-produced parts are presented to the high-frequency parts maker at the design stage, the effect of reducing the parts cost can be expected.

[Brief description of drawings]

FIG. 1 is a diagram showing an outline of a method of designing a high frequency power amplifier according to the present invention.

FIG. 2 is a diagram showing a flow of a high frequency circuit simulation method of the present invention.

FIG. 3 is a diagram showing functions of a system used in the method of designing a high frequency power amplifier of the present invention.

FIG. 4 is a diagram showing an operation along a time axis of a system used in the method of designing a high frequency power amplifier of the present invention.

FIG. 5 is a diagram showing a configuration of a system used in the method of designing a high frequency power amplifier of the present invention.

FIG. 6 is a diagram showing a procedure of using the system used in the method for designing a high-frequency power amplifier of the present invention.

FIG. 7 is a data configuration diagram of a system used in the method of designing a high frequency power amplifier of the present invention.

FIG. 8 is a diagram showing a required specification input screen displayed on the mobile phone terminal maker side among operation screens of the system used in the high-frequency power amplifier design method of the present invention.

FIG. 9 is a diagram showing a required specification / past design example display screen displayed on the high frequency power amplifier module maker side among operation screens of the system used in the high frequency power amplifier designing method of the present invention.

FIG. 10 is a diagram showing a circuit connection change screen displayed on the high frequency power amplifier module maker side of the operation screens of the system used in the high frequency power amplifier design method of the present invention.

FIG. 11 is a diagram showing a parameter change screen displayed on the high frequency power amplifier module maker side among operation screens of the system used in the high frequency power amplifier design method of the present invention.

FIG. 12 is a diagram showing a module characteristic presentation screen displayed on the high frequency power amplifier module manufacturer side among operation screens of the system used in the high frequency power amplifier design method of the present invention.

FIG. 13 is a diagram showing a component price reference screen displayed on the high frequency power amplifier module maker side among operation screens of the system used in the high frequency power amplifier design method of the present invention.

FIG. 14 is a diagram showing a component price reply screen displayed on the high frequency component maker side among the operation screens of the system used in the method for designing a high frequency power amplifier of the present invention.

FIG. 15 is a diagram showing a sample request screen displayed on the mobile phone terminal maker side among the operation screens of the system used in the high-frequency power amplifier design method of the present invention.

Continued front page    (72) Inventor Akie Kawai             1-280, Higashi Koikekubo, Kokubunji, Tokyo             Central Research Laboratory, Hitachi, Ltd. F term (reference) 5B046 AA08 BA03 JA04

Claims (20)

[Claims] 1. A simulation method for obtaining a modulated signal response of a circuit, comprising a step of inputting an unmodulated signal and calculating a circuit equation of the circuit. 2. The simulation method according to claim 1, wherein the modulation signal response of the circuit is obtained using the transfer admittance of the circuit obtained from the calculation result of the unmodulated signal response. 3. A simulation method for obtaining a modulated signal response of a circuit, the step of calculating an unmodulated signal response of the circuit, and calculating the transfer admittance of the circuit using the calculation result of the unmodulated signal response. And a step of calculating the modulated signal response using the calculation result of the transfer admittance. 4. The simulation method according to claim 2, wherein the calculation of the unmodulated signal response is performed by using a harmonic balance method. 5. The simulation method according to claim 3, wherein the calculation of the non-modulated signal response is performed using a harmonic balance method. 6. The simulation method according to claim 1, which does not have a step of solving a circuit equation of the circuit for each unit time. 7. The simulation method according to claim 3, which does not include a step of solving the circuit equation of the circuit for each unit time. 8. The simulation method according to claim 1, further comprising a step of determining whether or not the adjacent channel leakage power ratio satisfies the specifications. 9. The simulation method according to claim 3, further comprising a step of determining whether or not the adjacent channel leakage power ratio satisfies the specifications. 10. The simulation method according to claim 3, wherein a modulated wave response of a high frequency amplifier circuit having a plurality of stages is obtained. 11. A server receives a specification of a high frequency power amplifier through a telecommunication line, and a computer determines a component and wiring of said high frequency power amplifier based on said specification received by said server, A method of designing a high frequency power amplifier, comprising: simulating characteristics of the high frequency power amplifier; and transmitting the characteristics by the server through the telecommunication line. 12. A method of designing a high frequency power amplifier according to claim 11, wherein the simulation includes a step of creating an equivalent circuit of the component parts and the wiring defined by the computer, Calculating an unmodulated signal response, obtaining a transfer admittance of the equivalent circuit from the result of the calculation, and calculating a modulated signal response using the transfer admittance. 13. The method for designing a high frequency power amplifier according to claim 12, wherein when the characteristics do not meet the specifications, the computer changes the components or the wiring until the specifications are met. And a method of designing a high frequency power amplifier, comprising the step of simulating the characteristics of the high frequency power amplifier. 14. The method of designing a high frequency power amplifier according to claim 12, wherein the unmodulated signal response is performed by using a harmonic balance method. 15. The method of designing a high frequency power amplifier according to claim 11, further comprising the step of ordering the components through a telecommunication line. 16. The method of designing a high frequency power amplifier according to claim 12, further comprising the step of ordering the components through a telecommunication line. 17. The method of designing a high frequency power amplifier according to claim 15, wherein the step of ordering the components through an electric communication line is performed with a component manufacturer. 18. The method of designing a high frequency power amplifier according to claim 16, wherein the step of ordering the constituent parts through a telecommunication line is performed with a parts manufacturer. 19. The method of designing a high frequency power amplifier according to claim 11, wherein the step of transmitting the characteristic through the telecommunication line is performed for a mobile phone maker. . 20. The method of designing a high frequency power amplifier according to claim 12, wherein the step of transmitting the characteristics through the telecommunication line is performed for a mobile phone maker. .