JP2003132829A - Electron beam system and device manufacturing method using the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an electron beam system which irradiates the surface of a sample separately converged primary electron beams emitted from a plurality of electron guns, with high throughput and high reliability. SOLUTION: This electron beam system has one or more electrooptical elements 21 per electron gun for irradiating primary electron beams to the surface of a sample by scanning them. The electrooptical elements are formed through the steps of forming holes in an insulative member 210 corresponding to optical axes of the plurality of electron guns, dividing the insulative member into a plurality of sections around the holes by a plurality of slits 213, and forming a metallic coating layer 212 at least on each section of the insulative member divided by the slits. It is possible to apply a voltage on the coating layer of each section individually.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electron beam apparatus suitable for inspecting a pattern or the like formed on the surface of a sample and a device for evaluating the sample during or after the process using the electron beam apparatus. For details of the manufacturing method, the evaluation such as defect inspection of a sample such as a wafer having a pattern with a minimum line width of 0.1 μm or less, CD measurement, potential contrast measurement, and high-time resolved potential measurement is performed with high throughput and high evaluation. The present invention relates to an electron beam apparatus that can be performed with reliability, and a device manufacturing method that improves the yield by evaluating a sample during or after the process using such an electron beam apparatus.

[0002]

2. Description of the Related Art Two ferromagnetic materials are arranged parallel to an optical axis, coaxial holes are provided around each optical axis, and magnetic lines of force are provided between these two ferromagnetic materials at the peripheral portions of these two plates. A lens for a multi-beam having a magnetic lens group having a magnetic circuit for forming a lens is known. However, in the above-mentioned conventional techniques, the magnetic field strength of the ferromagnetic material is not infinite, and there is a fluctuation of the magnetic field strength of about ± 1%. Can not converge. Furthermore, in the variable shaped beam, the beam size and the beam current are different for each optical system, and the focus position changes for each optical system due to the space charging effect. There was a problem that it was not possible to focus accurately.

[0003]

The problem to be solved by the present invention is that the focal lengths of a plurality of lenses for a multi-beam can be made almost the same, or the focal length of each lens can be changed at high speed. It is to provide an electron beam device capable of performing the above. Another problem to be solved by the present invention is to provide an electron beam apparatus capable of reducing the size of a deflector that also functions as an electron gun and an astigmatism correction apparatus and arranging many optical systems in one wafer. It is to be. Another problem to be solved by the present invention is to provide a method of manufacturing a device for evaluating a sample after the process is finished by using the electron beam apparatus as described above.

[0004]

One aspect of the present invention is an electron beam apparatus for focusing a primary electron beam emitted from a plurality of electron guns and irradiating the sample surface with the primary electron beam by scanning the primary electron beam. Each electron gun is provided with at least one electron optical element for irradiating the surface, and the electron optical element forms a hole in one insulating member corresponding to the optical axes of the plurality of electron guns, The member is formed by dividing the member around the hole into a plurality of areas by a plurality of slits, and applying a metal coating layer to at least the area of the insulating member divided by the slits, the coating layer of each area being formed separately. It is configured such that a voltage can be applied. Another invention of the present application is an electron beam apparatus for scanning primary electron beams emitted from a plurality of electron guns and irradiating the sample surface with a plurality of lenses for focusing the primary electron beams and irradiating the sample surface with the primary electron beams. Is provided for each electron gun, the plurality of lenses,
A plurality of insulating members that are arranged apart from each other in the optical axis direction and insulated from each other, and each of the plurality of insulating members has a coaxial hole formed at a position corresponding to the optical axis of the plurality of electron guns; A coating formed on the plurality of insulating members by forming a metal coating layer on the inner surface of the hole and at least both surfaces around the hole of the surface of the insulating member to insulate the coating layer for each hole from each other. It is configured to apply the same voltage to the layers.

Another invention of the present application is an electron beam apparatus which scans primary electron beams emitted from a plurality of electron guns and irradiates the sample surface with the primary electron beams, and irradiates the sample surface with the primary electron beams. A plurality of lenses are provided for each electron gun, and the plurality of lenses are provided with a plurality of insulating members that are spaced apart from each other in the optical axis direction and insulated from each other. Each of the plurality of insulating members has the plurality of electrons. A coaxial hole is formed at a position corresponding to the optical axis of the gun, and at least one insulating member of the plurality of insulating members is provided with a metal coating layer so that the same potential is applied in the vicinity of the hole, The remaining insulating members are formed by applying a metal coating layer so that the vicinity of each optical axis of the same insulating member has the same potential. Still another invention of the present application is an electron beam apparatus for converging a primary electron beam emitted from an electron gun to scan and irradiate a sample, wherein the electron gun has a plurality of cathodes having an optical axis,
An anode having holes corresponding to the optical axis positions of the plurality of cathodes, and a control electrode group having a plurality of holes around each optical axis of the plurality of cathodes are configured. Still another invention of the present application is to perform the device evaluation in at least one process after the end of the device manufacturing process using the electron beam apparatus described in any of the above.

[0006]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS One embodiment of an electron beam apparatus according to the present invention will be described below with reference to the drawings. 1A is a vertical sectional view of the electron beam apparatus according to the present embodiment.
It is sectional drawing which followed the line AA of [B]. FIG. 1B is a schematic plan view showing a positional relationship between the primary optical system and the secondary optical system on a plane. In FIG. 1, an electron beam apparatus 1 of this embodiment includes a plurality of (only four in the drawing are shown) electron guns 10 and primary electron beams emitted from the electron guns provided corresponding to the respective electron guns. Primary optical system 2 for irradiating the sample
0, a secondary optical system 40 provided corresponding to each primary optical system, into which secondary electrons emitted from the sample by irradiation of the primary electron beam are introduced, and a set of each primary and secondary optical system. And a detection system 50 arranged correspondingly and detecting secondary electrons.

The electron gun 10 includes a cathode 11 and a common Wehnelt 15 as shown in detail in FIGS.
And a common anode 16. Each electron gun 10
The cathode 11 has a columnar main body 110, and one end surface (lower end surface in FIG. 2) 111 of the main body 110 is formed with a plurality of (six in this embodiment) protrusions 112 projecting downward. . The protrusion 112 has a conical or pyramidal shape with a sharp tip, and is formed on the circumference of a radius R1 centered on the optical axis OA ₁ which is also the central axis of the cathode 11. The positions of the protrusions are determined so that the distances Lx between adjacent protrusions are all equal when the position of the tip of the protrusion is projected on the X axis (the axis extending in the left-right direction in FIG. 2). Each cathode 11 is held by a support fitting 113 together with a carbon heater 12 that heats the cathode. The Wehnelt 15 is composed of a single plate-shaped member that is arranged perpendicular to the optical axis OA ₁ for a plurality of electron guns, and a small hole 151 is formed at a position corresponding to the projection 112 of the cathode 11. ing. Further, the anode 16 is also composed of a single plate-shaped member arranged perpendicular to the optical axis OA ₁ with respect to the electron gun, and has a radius R2 (R2> R1) centered on the optical axis OA ₁ . The hole 161 is formed. The cathode 11, the Wehnelt 15, and the anode 16 are made of the same material as a known electron gun.

In FIG. 1, a primary optical system 20 includes a first and a second deflector 21 (21a) and 21 for axial alignment.
(21b), the condenser lens 22, the multi-aperture plate 23, and the third and fourth deflectors 21 (21 for axial alignment).
c) and 21 (21d), NA aperture plate 24, reduction lens 25, fifth and sixth deflectors 21 (21e) and 21 (21f) for axial alignment and scanning, and E × B separator. 26 and an objective lens 27, which are arranged in order from the top as illustrated.

The first to sixth deflectors 21 (21a to 21f) have a length in the direction along the optical axis OA ₁ (direction along the Z-axis) (thickness of members constituting the deflector) and the length thereof. Since the structure is substantially the same except that the diameters of the holes formed in the members are different, the deflector 21a will be described as a representative. 1, 4 and 5, the deflector 21 is a member 21 made of an insulating material such as machinable ceramic having a predetermined thickness.
Made from scratch. A circular hole 211 having a desired radius centered on each optical axis OA ₁ is formed in the member 210 made of an insulating material. In FIG. 5, around each hole, a member 21 extending in a radial direction around the optical axis to a predetermined distance is formed.
A plurality (eight in this embodiment) of slits 213 penetrating 0 are formed at desired intervals (shown at equal intervals in FIG. 4) in the circumferential direction, and the members 210 surround the holes 211 with the slits 213. According to a plurality of areas (8 in this embodiment)
Area). After the formation of the hole 211 and the formation of the slit 213 in the member are completed, the surface of the member 210, that is, the upper surface and the lower surface in FIG. 1, the inner surface of the hole 211 and the inner surface of the slit are coated with a coating layer 21 of a metal such as gold.
2 is given. Thereafter, the coating layer in the innermost portion of the slit 213 (the outermost portion in the radial direction from the optical axis) is peeled off in a certain range, and the innermost portion of each slit 213 is formed on the coating layer 212 on the upper surface and the lower surface of the member 210. The peeling portions 214 continuous with the peeling portions are formed. As a result, the coating layer 212 in each area around the hole 211 is electrically insulated from the coating layers in the areas adjacent to each other, and the coating layer 212 is separated from the coating layer 212 by the peeling portion 214 via the conductor 215 made of the coating layer to the outside. Power source (not shown). Then, the electrode port voltage is applied to the inside of the hole 211 through the conductor 215. Each deflector 21 has a conductive metallic electrostatic shield plate 3 on both sides (upper and lower sides in FIG. 1) of the member.
1 is arranged apart from the coating layer. As shown in FIG. 5, the electrostatic shield plate 31 has a circular hole 311 formed around the optical axis OA ₁ .
The diameter of this hole 311 is the same as the diameter of the hole 211 of the deflector 21. The electrostatic shield plate 31 prevents the electric field from leaking in the direction along the optical axis when the surface of the member 210 of the deflector 21 made of an insulating material is charged. Of the above deflectors, first and second deflectors 21a and 21b
Is for axial alignment for aligning the primary electron beam with the apertures of the condenser lens 22 and the multi-aperture plate 23. The third and fourth deflectors 21c and 21d are the aperture 241 of the NA aperture plate 24 and the reduction lens. 25 for axial alignment of the primary electron beam with respect to 25.
The sixth deflectors 21e and 21f scan the irradiation point of the primary electron beam on the material S and, at the same time, align the primary electron beam with the objective lens 27.

A condenser lens 22, a reduction lens 25 and
Since the objective lens 27 and the objective lens 27 have the same structure,
Describes the structure of the objective lens 27 in detail, and
The description of the lens is omitted. As shown in FIG. 1, the objective
The lens 27 is composed of three plate-shaped electrodes arranged in parallel with each other.
Poles, that is, upper electrode 27, central electrode 27a, lower electrode
The pole 27b is provided. 1, FIG. 6 and FIG.
The upper electrode 27 is made of a machinable ceramic or the like like the deflector.
Insulating member 270 is provided. Insulation material
270 is each optical axis OA₁A circle with the desired radius centered at
271 is formed. Surface of member 270
Then, in FIG. 1, the upper and lower surfaces and the inner surface of the hole 271 are
A coating layer 272 made of metal such as gold is applied. Figure
7, around each hole, the desired
A circular coating layer peeling portion 274 having a radius is formed.
ing. The peeling portion 274 is preferably formed on the member.
The same circle is preferable for each hole, but due to manufacturing restrictions
In Fig. 6, the peeling parts for the two holes in the center have almost the same shape.
However, the peeling parts for the two holes on both sides are
It is also different from the central peeling part. However, the peeling part 2
74, the electric field does not leak to the optical axis even if it is charged
It is placed as far as possible from the optical axis. Chuoden
The pole 27a and the lower electrode 27b are used for lenses of all optical axes.
Since it is only necessary to apply the same voltage, it is necessary to
No turning required, may consist of metal plate
Yes. Therefore, the central electrode 27a and the lower electrode 27b
In this embodiment, each is made of metal 270a.
And 270b, the optical axis OA ₁The optical axis at the position of
Circular holes 271a and 27 having a desired radius as a center
1b are formed respectively. When you want to thin the electrode
Is made of ceramic with high Young's modulus
A coating layer may be applied. Also, for each lens electrode
The thickness does not have to be uniform throughout, as shown in FIG.
As shown in FIG.
For each optical axis, be symmetrical about each of those optical axes.
If so, various cross-sectional shapes can be taken.

Although not shown, the multi-aperture plate 23 is made to correspond to the projections 112 formed on the cathode 11 and the small holes 152 formed in the Wehnelt 15 on a predetermined circumference around each optical axis. A plurality of openings (six in this embodiment) are formed. Further, a circular hole 241 having a desired radius centered on the optical axis is formed in the NA aperture plate 24 at the position of each optical axis OA ₁ .

In FIGS. 1 and 9, the E × B separator 26
Are integrally formed with the sixth deflector 21f. Since the structure of the deflector 21f is substantially the same as that of the deflector 21a, detailed description thereof will be omitted. Note that the peeling portion 214 that is continuous with the eight slits formed around the hole 211 is shown by a thin line in this figure, but in reality, the electrical separation between the adjacent conductors 215 formed by the coating layer is performed. It is formed to have a desired width in order to prevent conduction. A hole 211 is formed in the member 210 forming the deflector 21f.
In the order of the center, that is, from the optical axis OA ₁ side, a pair of arc-shaped notches 261 for the first (inward in the radial direction in FIG. 9) saddle coil and a pair of second (outward in the radial direction).
A pair of arcuate cutouts 262 for the saddle coil and a pair of arcuate cutouts 263 for the permalloy core on the outer side in the radial direction are formed to face each other. The notch 261 for the first saddle coil and the notch 262 for the second saddle coil are arranged so as to be displaced by 90 ° in the circumferential direction about the optical axis. Further, the notch 262 for the second saddle coil and the notch 263 for the permalloy core are arranged so as to be displaced by 90 ° in the circumferential direction about the optical axis. Each notch is formed so as to penetrate in the thickness direction of the member 260. A saddle coil 265 for generating a magnetic field in the X direction is embedded in the notch 261, a saddle coil 266 for generating a magnetic field in the Y direction is embedded in the notch 262, and a permalloy core 267 is embedded in the notch 263. There is. The coating layer on the surface of the member 260 is electrically delimited by the coating layer peeling portion 214 indicated by a line to form a conductor 215.

FIG. 10 shows a secondary optical system 40 in which the secondary electron beam is emitted from the material by irradiation with the primary electron beam and the secondary electron beam is input. This secondary optical system 40 is shown in FIG.
Has an optical axis OA ₂ which is inclined with respect to the optical axis OA ₁ of the primary optical system. Therefore, the plate-shaped members forming the fourth and fifth deflectors 21d and 21e closer to the electron gun than the E × B separator 26, the plate-shaped members forming the reduction lens 25, and the Y of the NA aperture plate 24. A portion in the axial direction (a portion separated from the optical axis OA _{1 in the} Y-axis direction) is cut out so as not to hinder the progress of secondary electrons. The secondary optical system 40 includes a multi-aperture plate 41.
A plurality of openings 411 corresponding to the openings formed in the multi-aperture plate 23 of the primary optical system are formed in the. The detector 51 of the detection system 50 is arranged corresponding to each opening of the multi-aperture plate 41.

In the above electron beam apparatus, a plurality (six in this embodiment) of primary electron beams emitted from the projections 112 of the cathode 11 of each electron gun 10 pass through the small holes 151 of the Wehnelt 15 and are thereby given a predetermined amount. Exit the electron gun in a uniform shape and spacing. The primary electron beam is axially aligned with the condenser lens 22 and the aperture of the multi-aperture plate 23 by the first and second deflectors 21a and 21b, and focused by the condenser lens 23. The primary electron beam is
The third and fourth deflectors 21c and 21d are axially aligned with the reduction lens 25, and a reduction image of the aperture is formed by the reduction lens. This primary electron beam is further passed through the objective lens 2 by the fifth and sixth deflectors 12e and 12f.
The objective lens 2 is aligned with 7 and is scanned and scanned.
7, the primary electron beam is applied to the surface of the sample S as a reduced image. The secondary electrons emitted from the sample S by the irradiation of the primary electron beam are input to the secondary optical system 40 by the E × B separator 26, and an image of the secondary electron is formed at each aperture position of the multi-aperture plate 41. Image. This secondary electron is detected by the detector 51 arranged for each aperture, converted into an electric signal representing its intensity, and output. It is processed by a processing device (not shown).
The sample is moved in the X-axis direction and Y direction by a stage device (not shown).
It is supported so as to be movable in the axial direction, the stage device is operated to continuously move the sample S in the Y direction, and step and repeat moves in the X direction to evaluate the pattern and the like formed on the surface of the sample.

The secondary electrons detected by each detector are converted into an electric signal representing its intensity and output. The output electric signals are respectively amplified by the amplifier 52, and then received by the image processing unit 61 of the processing control system 60. The image processing unit 61 is further supplied with a scanning signal for deflecting the primary electron beam, and image data is supplied. Convert to. The image processing unit can display an image showing the surface of the sample. Defects in the sample S can also be detected by comparing this image with a standard pattern. Further, the pattern to be measured of the sample S is moved to near the optical axis of the primary optical system 20 by registration, the line width evaluation signal is taken out by line scanning, and the line width evaluation signal is appropriately calibrated to obtain the pattern on the sample. Line width can be measured.

Here, the primary electron beam that has passed through the aperture of the multi-aperture plate 23 of the primary optical system is focused on the surface of the sample S,
When the secondary electrons emitted from the sample S are imaged on the detector 51, particular attention is paid to minimize the effects of the three aberrations of coma, axial chromatic aberration, and field astigmatism that occur in the primary optical system. There is a need. Next, regarding the relationship between the spacing between the primary electron beams and the secondary optical system, crosstalk between the multiple beams can be achieved by separating the spacing between the primary electron beams by a distance larger than the aberration of the objective lens with respect to the secondary electrons. Can be eliminated. In the electron beam apparatus of the above-described embodiment, it is possible to form a plurality of optical systems having a plurality of electron guns on a plurality of integrated members, and it is possible to control each optical element of each optical system. Therefore, the focusing condition can be adjusted for each optical axis of each optical system. Moreover, since the same optical element of a plurality of optical systems can be arranged and manufactured on a plate-shaped member, the whole apparatus can be made compact.

Next, an embodiment of the method for manufacturing a semiconductor device according to the present invention will be described with reference to FIGS. FIG. 11 is a flow chart showing an embodiment of the method for manufacturing a semiconductor device according to the present invention. The manufacturing process of this embodiment includes the following main processes. (1) Wafer manufacturing process for manufacturing wafers (or wafer preparing process for preparing wafers) (2) Mask manufacturing process for manufacturing masks used for exposure (or mask preparing process for preparing masks) (3) Necessary for wafers Wafer processing step for performing various processing (4) chip assembling step for cutting out one chip formed on the wafer one by one to make it operable (5) chip inspection step for inspecting the completed chip The main process consists of several sub-processes.

Among these main steps, the wafer processing step (3) has a decisive influence on the performance of the semiconductor device. In this step, the designed circuit patterns are sequentially laminated on the wafer to form a large number of chips that operate as memories and MPUs. This wafer processing step includes the following steps. (A) Thin-film forming step of forming a dielectric thin film to be an insulating layer, a wiring part, or a metal thin film forming an electrode part (CVD
(B) Oxidation step for oxidizing this thin film layer or wafer substrate (C) Lithography for forming a resist pattern using a mask (reticle) for selectively processing the thin film layer, wafer substrate, etc. Step (D) Etching step of processing a thin film layer or a substrate according to a resist pattern (for example, using a dry etching technique) (E) Ion / impurity implantation diffusion step (F) Resist stripping step (G) Step of inspecting the processed wafer The wafer processing step is repeated for the required number of layers to manufacture a semiconductor device that operates as designed.

FIG. 12 is a flow chart showing a lithography process which is the core of the wafer processing process of FIG. This lithography step includes the following steps. (A) A resist coating step of coating a resist on a wafer on which a circuit pattern is formed in the preceding step (b) A step of exposing the resist (c) A developing step of developing the exposed resist to obtain a resist pattern ( d) Annealing Step for Stabilizing the Developed Resist Pattern The above-mentioned semiconductor device manufacturing step, wafer processing step, and lithography step are well known and need no further explanation. When the defect inspection method and the defect inspection apparatus according to the present invention are used in the inspection step (G), even a semiconductor device having a fine pattern,
Since the inspection can be performed with good throughput, it is possible to perform 100% inspection, improve product yield, and prevent defective products from being shipped.

[0020]

According to the present invention, the following effects can be achieved. (B) A multi-beam, multi-column electron beam device can be easily manufactured. (B) Since each column such as a deflector can be made of an integral member, it becomes compact, and as a result, a large number of optical systems can be arranged on one wafer to be evaluated or processed. (C) Since a small number of insulating spacers may be provided at positions far from the optical axis so as to be shared by the respective optical axes, the probability of occurrence of charging problems can be reduced. (D) Since the throughput is (the number of beams of one optical system) times (the number of optical systems) times, the throughput is significantly improved. (E) Metallization can be easily and selectively peeled off if the flat metal peeling portion is formed by using lithography. (G) Since the lens function for correction can be provided for each optical axis, the focusing condition for each optical axis can be accurately adjusted.

[Brief description of drawings]

FIG. 1A is a vertical cross-sectional view of an electron beam apparatus according to the present invention, showing a cross section of a primary optical system taken along the line AA in [B].

FIG. 2 is an enlarged side view of the electron gun.

FIG. 3 is a view taken along the line CC of FIG.

FIG. 4 is a plan view of a deflector.

FIG. 5 is a plan view of an electrostatic shield plate of the deflector.

FIG. 6 is a plan view of the upper electrode of the objective lens.

FIG. 7 is a plan view of the center and lower electrodes of the objective lens.

FIG. 8 is a sectional view showing an example of a shape around an optical axis of an optical lens.

FIG. 9 is a plan view of a deflector and an E × B separator.

FIG. 10 is a diagram showing a secondary optical system.

FIG. 11 is a flowchart showing an embodiment of a method for manufacturing a semiconductor device according to the present invention.

FIG. 12 is a flowchart showing a lithography process which is the core of the wafer processing process of FIG.

[Explanation of symbols]

1 Electron Beam Device 10 Electron Gun 11 Cathode 14 Wehnelt 16 Anode 20 Primary Optical System 21 (21a to 21f) Deflector 22 Condenser Lens 23 Multi-Aperture Plate 24 NA Aperture Plate 25 Reduction Lens 26 E × B Deflector 27 Objective Lens 40 Two Next optical system 41 Multi-aperture plate 50 Detection system 51 Detector 60 Processing control system 61 Image processing unit

─────────────────────────────────────────────────── ─── Continuation of front page (51) Int.Cl. ⁷ Identification code FI theme code (reference) G21K 1/087 G21K 1/087 S 5C030 5/04 M 5C033 5/04 W H01J 37/05 H01J 37/05 37/06 A 37/06 37/12 37/12 37/28 B 37/28 H01L 21/66 J H01L 21/66 G01R 31/28 L (72) Inventor Shinji Noji 11th Haneda Asahi-cho, Ota-ku, Tokyo No. 1 Inside EBARA CORPORATION (72) Inventor Toru Satake No. 11-1 Haneda Asahi-cho, Ota-ku, Tokyo F-term inside EBARA Corporation (reference) 2G001 AA03 AA10 BA15 CA03 GA01 GA06 HA09 HA13 JA02 LA11 MA05 2G011 AA01 AE03 2G014 AA02 AA03 AA08 AB59 AC11 2G132 AA00 AD15 AF13 AL00 AL11 4M106 AA01 BA02 CA08 CA39 CA41 DB14 5C030 BB02 BB05 BB06 5C033 AA02 AA05 CC01 FF01 NN01 NP01 NP05 NP06 UU01 UU02 UU04

Claims (5)

[Claims] 1. An electron beam apparatus for focusing primary electron beams emitted from a plurality of electron guns and irradiating the sample surface with the primary electron beam, wherein at least one electron optical device for scanning the primary electron beam and irradiating the sample surface with the primary electron beam. An element is provided for each electron gun, and the electron optical element forms a hole in one insulating member corresponding to the optical axes of the plurality of electron guns, and the insulating member has a plurality of slits around the hole. Is formed by applying a metal coating layer to at least the areas of the insulating member divided by the slits, and it is possible to separately apply a voltage to the coating layer of each area. Characteristic electron beam device. 2. An electron beam apparatus for scanning primary electron beams emitted from a plurality of electron guns to irradiate the sample surface with a plurality of lenses, each of which has a plurality of lenses for focusing the primary electron beam and irradiating it on the sample surface. It is provided for each electron gun, and the plurality of lenses are provided with a plurality of insulating members which are arranged apart from each other in the optical axis direction and are insulated from each other, and each of the plurality of insulating members is provided with an optical axis of the plurality of electron guns. Coaxial holes are formed at corresponding positions, and a metal coating layer is formed on the inner surface of each of the insulating members and at least both surfaces around the hole to insulate the coating layers for each hole from each other. Then, the same voltage is applied to the coating layers formed on the plurality of insulating members. 3. An electron beam apparatus for scanning primary electron beams emitted from a plurality of electron guns to irradiate the sample surface with a plurality of lenses for focusing the primary electron beams and irradiating the sample surface with the focused primary electron beams. It is provided for each electron gun, and the plurality of lenses are provided with a plurality of insulating members which are arranged apart from each other in the optical axis direction and are insulated from each other, and each of the plurality of insulating members is provided with an optical axis of the plurality of electron guns. Coaxial holes are formed at corresponding positions, and at least one insulating member of the plurality of insulating members is provided with a metal coating layer so that the same potential is applied in the vicinity of the holes, and the remaining insulating members are An electron beam device, wherein a metal coating layer is applied such that the vicinity of each optical axis of the same insulating member has the same potential. 4. An electron beam apparatus for converging a primary electron beam emitted from an electron gun to scan and irradiate a sample, wherein the electron gun comprises a plurality of cathodes having an optical axis and a plurality of cathodes of the plurality of cathodes. An electron beam apparatus comprising: an anode having a hole corresponding to an optical axis position; and a control electrode group having a plurality of holes around each optical axis of the plurality of cathodes. 5. A device manufacturing method, wherein the electron beam apparatus according to claim 1 is used to evaluate a device in at least one process after the device manufacturing process is completed.