JP2003123632A - Manufacturing method of electron emitting unit, manufacturing method of cold cathode field electron emitting element, and manufacturing method of cold cathode field electron emitting display device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a manufacturing method of a flat type cold cathode field electron emitting element that is capable of forming electron emitting units having uniform and well-controlled convex and concave parts. SOLUTION: This is a manufacturing method of a cold cathode field electron emitting element that is comprised of a cathode electrode 11, an electron emitting part 15 that is composed of a plurality of electron emitting units 15A formed on the cathode electrode 11, and a gate electrode 13 that is arranged over the electron emitting part 15 and has an opening part 14A. The electron emitting units are formed by (A) a process for forming the base layer 21 on the cathode, (B) a process in which a convex-shape base layer 21 is left on a part of the cathode electrode by electrolyzing the base layer 21, and (C) a process in which an electron emitting layer 22 is formed on the cathode electrode 11 and on the base layer 21.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing an electron emitter, a method for manufacturing a cold cathode field emission device, and a method for manufacturing a cold cathode field emission display device.

[0002]

2. Description of the Related Art When an electric field having a strength higher than a certain threshold is applied to a metal or semiconductor placed in a vacuum, electrons pass through an energy barrier near the surface of the metal or semiconductor by a quantum tunnel effect, and even at room temperature. Electrons are emitted into the vacuum. Electron emission based on such a principle is called cold cathode field emission, or simply field emission. In recent years, a flat type cold cathode field emission display device, so-called field emission display (FED), in which the principle of field emission is applied to image display has been proposed, and has advantages such as high brightness and low power consumption. Therefore, it is expected as an image display device that replaces the conventional cathode ray tube (CRT).

A cold cathode field emission display device (hereinafter sometimes simply referred to as a display device) generally includes a cathode panel having electron emission regions corresponding to pixels arranged in a two-dimensional matrix, and an electron emission region. It has a structure in which an anode panel, which is excited by the collision with electrons emitted from the emission section and emits light, is opposed to the anode panel across a vacuum space. In each pixel on the cathode panel, usually, a plurality of electron emitting portions are formed, and further, a gate electrode for drawing out electrons from the electron emitting portion is also formed. The minimum structural unit relating to electron emission, that is, a portion having an electron emission portion and a gate electrode is a cold cathode field emission device. Hereinafter, the cold cathode field emission device may be simply referred to as a field emission device.

FIG. 27 shows a structural example of such a display device. The illustrated field emission device is a field emission device of a so-called Spindt type field emission device having a conical electron emission portion. This field emission device has a cathode electrode 211 formed on a support 210.
An insulating layer 212 formed on the support 210 and the cathode electrode 211, a gate electrode 213 formed on the insulating layer 212, an opening 214 provided in the gate electrode 213 and the insulating layer 212, and an opening It is composed of a conical electron emission portion 215 formed on the cathode electrode 211 located at the bottom of 214. Generally, the cathode electrode 2
11 and the gate electrode 213 are respectively formed in stripes in the directions in which the projection images of these two electrodes are orthogonal to each other, and a region corresponding to a portion where the projection images of these two electrodes overlap (for one pixel). A plurality of field emission devices are usually arranged in a gate electrode / cathode electrode overlapping region or an electron emission region). Further, such gate electrode / cathode electrode overlapping regions are usually arranged in a two-dimensional matrix in the effective region of the cathode panel CP (region that functions as an actual display screen).

On the other hand, the anode panel AP is a substrate 30.
And a phosphor layer 32 formed on the substrate 30 according to a predetermined pattern (for example, dot shape or stripe shape).
And an anode electrode 33 formed on the phosphor layer 32. A black matrix 31 is formed on the substrate 30 between the phosphor layers 32. One pixel includes a group of field emission devices arranged in a predetermined number in a gate electrode / cathode electrode overlapping region, which is a region where the cathode electrode 211 and the gate electrode 213 overlap on the cathode panel side, and faces one group of these field emission devices. And the phosphor layer 32 on the anode panel side. In the effective area, such pixels are arranged in the order of, for example, hundreds of thousands to millions.

Anode panel AP and cathode panel CP
Are arranged so that the field emission device and the phosphor layer 32 are opposed to each other, and they are bonded to each other via the frame 34 at the peripheral edge, whereby a display device can be manufactured. The cathode panel CP and the anode panel AP are 0.1 mm to 1
They are arranged opposite to each other with a distance of about mm. A through hole (not shown) for vacuum exhaust is provided in an invalid area (for example, an invalid area of the cathode panel CP) that surrounds the effective area and in which a peripheral circuit for selecting pixels is formed. A chip tube (not shown) which is closed after vacuum evacuation is connected to the through hole. That is, the space surrounded by the anode panel AP, the cathode panel CP, and the frame 34 is in a vacuum.

A relative negative voltage is applied to the cathode electrode 211 from the cathode electrode control circuit 40, and the gate electrode 2
A relative positive voltage is applied to 13 from the gate electrode control circuit 41, and a positive voltage higher than that to the gate electrode 213 is applied to the anode electrode 33 from the anode electrode control circuit 42. When displaying is performed in such a display device, for example, a scanning signal is input to the cathode electrode 211 from the cathode electrode control circuit 40, and a video signal is input to the gate electrode 213 from the gate electrode control circuit 41. Cathode electrode 2
11 is generated by the quantum tunnel effect due to an electric field generated when a voltage is applied between the gate electrode 213 and the gate electrode 213.
3, and collides with the phosphor layer 32. As a result, the phosphor layer 32 is excited and emits light, and a desired image can be obtained. That is, the operation of this display device is basically controlled by the voltage applied to the gate electrode 213 and the voltage applied to the electron emission portion 215 through the cathode electrode 211.

An outline of a conventional method of manufacturing a Spindt-type field emission device will be described below. This manufacturing method is basically a method of forming a conical electron emission portion 215 by vertical vapor deposition of a metal material. is there. That is, although the vapor deposition particles are vertically incident on the opening 214, the vapor deposition particles reaching the bottom of the opening 214 by utilizing the shielding effect of the overhang-like deposit formed near the opening 214. Is gradually reduced to form the electron emitting portion 215, which is a conical deposit, in a self-aligned manner. Hereinafter, an outline of a method for manufacturing a Spindt-type field emission device based on a method in which a separation layer 217 is formed in advance on the gate electrode 213 in order to easily remove unnecessary overhang-like deposits is described. Description will be made with reference to FIGS. 28 and 29 which are schematic partial end views of the above.

[Step-10] First, a striped cathode electrode 211 made of niobium (Nb) is formed on a support 210 made of, for example, glass, and then SiO ₂ is formed on the entire surface.
An insulating layer 212 made of is formed, and a stripe-shaped gate electrode 213 is further formed on the insulating layer 212. The cathode electrode 211 and the gate electrode 213 can be formed by, for example, a sputtering method, a lithography technique, and a dry etching technique.

[Step-20] Next, a resist layer 216 functioning as an etching mask is formed on the gate electrode 213 and the insulating layer 212 by a lithographic technique (see FIG. 28A). After that, a first opening portion 214A is formed in the gate electrode 213 by RIE (reactive ion etching) method, and further, the first opening portion 214A is formed.
A second opening 214B communicating with the insulating layer 212 is formed. The first opening 214A and the second opening 21
4B is generically called an opening 214. The cathode electrode 211 is exposed at the bottom of the opening 214. Then, the resist layer 216 is removed by an ashing technique. Thus, the structure shown in FIG. 28B can be obtained.

[Step-30] Next, on the cathode electrode 211 exposed at the bottom of the opening 214, the electron emitting portion 215 is formed.
To form. Specifically, the peeling layer 217 is formed by obliquely vapor-depositing aluminum on the entire surface. At this time, the incident angle of the vapor deposition particles with respect to the normal line of the support 210 is selected to be sufficiently large so that aluminum is hardly deposited on the bottom of the opening 214 and the gate electrode 2 is formed.
A peeling layer 217 can be formed over the insulating layer 212 and the insulating layer 212. The peeling layer 217 projects from the opening end of the opening 214 in an eaves-like shape, whereby the opening 214
Are substantially reduced in diameter (see FIG. 28C).

[Step-40] Next, for example, molybdenum (Mo) is vertically vapor-deposited on the entire surface. At this time, as shown in FIG. 29A, as the conductive material layer 218 made of molybdenum having an overhang shape grows on the separation layer 217, the substantial diameter of the opening 214 is gradually reduced. Therefore, the vapor deposition particles that contribute to the deposition at the bottom of the opening 214 are gradually limited to those that pass near the center of the opening 214. As a result, the opening 21
A cone-shaped deposit is formed on the bottom of No. 4, and the cone-shaped deposit made of molybdenum serves as an electron emission portion 215.

[Step-50] After that, the release layer 217 and the insulating layer 21 are formed by an electrochemical process and a wet process.
2 and the surface of the gate electrode 213, the insulating layer 21
2 and the conductive material layer 218 above the gate electrode 213 is selectively removed. As a result, as shown in FIG. 29B, the cathode electrode 211 located at the bottom of the opening 214.
The conical electron emission part 215 can be left on the top.
In the method of forming the electron emitting portion 215, one electron emitting portion 215 is essentially formed in one opening 214.

In order to obtain a large emission electron current with a low driving voltage in the structure of the display device, the electron emission portion 215 is used.
It is effective to sharpen the tip of the electron emission section 215 of the Spindt-type field emission device described above.
Can be said to have excellent performance. However, a sophisticated processing technique is required to form the conical electron emitting portion 215. Moreover, since electrons are emitted from the tip of the electron emitting portion 215, in order to secure the brightness in the display device, as many electron emitting portions 215 (for example, about 10,000 / mm ² ) as possible are formed. There must be. Therefore,
It is necessary to miniaturize the electron emitting portion. Further, depending on the case, it is becoming difficult to uniformly form the tens of millions or more of the electron emitting portions 215 over the entire effective region as the area of the effective region increases. That is, the conductive material layer 218 having a uniform film quality and film thickness over the entire large-area support is formed by the vertical vapor deposition method,
It is extremely difficult to form the peeling layer 217 having an eave shape having a uniform size by the oblique vapor deposition method, and some in-plane variation and lot-to-lot variation cannot be avoided. Due to this variation, the image display characteristics of the display device, for example, the brightness of the image vary. In addition, when the peeling layer 217 formed over a large area is removed, the residue may contaminate the cathode panel CP, resulting in a problem that the manufacturing yield of the display device is reduced.

Therefore, the conical electron emitting portion is not used,
A so-called flat-type field emission device has been proposed which uses a flat electron-emitting portion exposed on the bottom surface of the opening. The electron emission portion of the planar field emission device is provided on the cathode electrode, and is made of a material having a work function lower than that of the constituent material of the cathode electrode so that a high emission electron current can be achieved even if it is planar. It is configured. As such a material, it has recently been proposed to use a carbon-based material. Carbon-based materials have a lower threshold electric field and higher electron emission efficiency than refractory metals. Further, it is possible to change the bonding form of diamond, graphite, carbon nanotube, or the like.

In the Spindt-type field emission device, the electric field strength at the tip of the electron emission section 215 depends on the distance from the edge 213A of the gate electrode 213 to the tip of the electron emission section 215. Therefore, the uniformity of the positional relationship between the opening 214 and the electron emission portion 215 and the uniformity of the height of the tip of the electron emission portion 215 are important, but it is difficult to achieve these uniformity. On the other hand, in the planar field emission device, the distance from the edge of the gate electrode to the electron emission portion is defined exclusively by the film thickness of the insulating layer. Therefore,
It is easier to control the distance in the planar field emission device than in the Spindt field emission device.

[0017]

On the other hand, in the planar field emission device, the electron emitting portion of the electron emitting portion is
It is not a kind of dot like Spindt type field emission device,
Since it is planar, the distance from the edge of the gate electrode to the electron emission portion becomes long, and the electric field strength in the vicinity of the electron emission portion becomes lower than that of the Spindt-type field emission device. Further, although the size of the opening can be made larger than that of the Spindt-type field emission device, the effect of confining the electric field inside the opening is weakened, and as a result, electric field concentration in the vicinity of the electron emission part is less likely to occur. As a result, the electron emission efficiency is lower than that of the Spindt-type field emission device,
There is a problem that a higher gate voltage is required, and the driving voltage and power consumption increase.

As described above, one of the methods for improving the electron emission efficiency in the planar field emission device which can be manufactured by a relatively easy process and does not require high uniformity.
Another known method is to form fine irregularities on the surface of the electron emitting portion (for example, Japanese Patent Laid-Open No. 2000-26029).
No. 8). Since the electric field generally concentrates more in a smaller area, it is very effective to form fine irregularities on the surface of the electron emitting portion from the viewpoint of improving the electron emission efficiency. The voltage and power consumption can be reduced.

However, Japanese Patent Laid-Open No. 2000-2602.
In the method disclosed in Japanese Patent Publication No. 98, the surface of the cathode electrode is etched. Therefore, in the case of manufacturing a large-area display device, the surface of the cathode electrode is made uniform and
It may be difficult to etch with good controllability.

The object of the present invention is therefore uniform and
Method of manufacturing electron emitter capable of forming electron emitter having concavo-convex portion with good controllability, method of manufacturing flat-type cold cathode field emission device to which method of manufacturing such electron emitter is applied, and plane To provide a method for manufacturing a cold cathode field emission display device to which a method for manufacturing a cold cathode field emission device of the type is applied.

[0021]

A method of manufacturing an electron emitter according to a first aspect of the present invention for achieving the above object comprises a step (A) of forming an electron emission layer on a conductive substrate. And (B) by electrolyzing the electron emission layer,
A step of leaving a convex electron emission layer on a part of the substrate.

Second aspect of the present invention for achieving the above object
In the method for producing an electron emitter according to the aspect of (1), (A) a step of forming a base layer on a conductive base, and (B) electrolyzing the base layer to form a convex base layer on a part of the base. And a step of forming an electron emission layer on the substrate and the base layer (C).

According to the method for manufacturing an electron emitter of the present invention according to the first or second aspect of the present invention, an electron beam in an electron emission section of a cold cathode field emission device or an electron gun incorporated in a cathode ray tube. Source, fluorescent display tube can be obtained.

A first aspect of the present invention for achieving the above object
The method for manufacturing a cold cathode field emission device according to the aspect 1 is a method for manufacturing a so-called two-electrode type cold cathode field emission device, wherein (a) a conductive material layer for a cathode electrode provided on a support. A method of manufacturing a cold cathode field emission device comprising a cathode electrode composed of (b) and an electron emission portion composed of a plurality of electron emission members formed on the cathode electrode, comprising: A) a step of forming an electron emission layer on the conductive material layer for the cathode electrode or the cathode electrode, and (B) electrolysis of the electron emission layer,
And a step of leaving a convex electron emission layer on a part of the conductive material layer for the cathode electrode or the cathode electrode.

Second aspect of the present invention for achieving the above object
The method for manufacturing a cold cathode field emission device according to the aspect 1 is a method for manufacturing a so-called two-electrode type cold cathode field emission device, wherein (a) a conductive material layer for a cathode electrode provided on a support. A method of manufacturing a cold cathode field emission device comprising a cathode electrode composed of (b) and an electron emission portion composed of a plurality of electron emission members formed on the cathode electrode, comprising: A) a step of forming a base layer on the conductive material layer for the cathode electrode or the cathode electrode;
(B) a step of leaving a convex base layer on the conductive material layer for the cathode electrode or a part of the cathode electrode by electrolyzing the base layer, and (C) on the conductive material layer for the cathode electrode or on the cathode electrode, and And a step of forming an electron emission layer on the base layer.

A third aspect of the present invention for achieving the above object.
The method for manufacturing a cold cathode field emission device according to the aspect 1 is a method for manufacturing a so-called three-electrode type cold cathode field emission device, wherein (a) a conductive material layer for a cathode electrode provided on a support. A cathode electrode comprising: (b) an electron-emitting portion composed of a plurality of electron-emitting members formed on the cathode electrode; and (c) a gate electrode disposed above the electron-emitting portion and having an opening, A method of manufacturing a cold cathode field emission device comprising: (A) a step of forming an electron emission layer on a conductive material layer for a cathode electrode or on a cathode electrode; and (B) the electron emission layer. It is characterized in that the layer is formed by a step of leaving a convex electron emission layer on the conductive material layer for the cathode electrode or a part of the cathode electrode by electrolyzing the layer.

Fourth aspect of the present invention for achieving the above object
The method for manufacturing a cold cathode field emission device according to the aspect 1 is a method for manufacturing a so-called three-electrode type cold cathode field emission device, wherein (a) a conductive material layer for a cathode electrode provided on a support. A cathode electrode comprising: (b) an electron-emitting portion composed of a plurality of electron-emitting members formed on the cathode electrode; and (c) a gate electrode disposed above the electron-emitting portion and having an opening, A method of manufacturing a cold cathode field emission device, comprising: (A) forming a base layer on a conductive material layer for a cathode electrode or on a cathode electrode; and (B) electrolyzing the base layer. The step of leaving a convex base layer on the conductive material layer for the cathode electrode or a part of the cathode electrode, and (C) forming the electron emitting layer on the conductive material layer for the cathode electrode or the cathode electrode and on the base layer. Form Step, and forming by.

The first aspect of the present invention for achieving the above object
A method of manufacturing a cold cathode field emission display device according to another aspect is a method of manufacturing a cold cathode field emission display device including a so-called two-electrode type cold cathode field emission device. A cathode panel provided with a plurality of electron-emitting devices and an anode panel having a phosphor layer and an anode electrode are joined at their peripheral portions, and the cold cathode field electron-emitting device is (a) a support. Provided above,
A cathode electrode made of a conductive material layer for the cathode electrode,
(B) A method for manufacturing a cold cathode field emission display, comprising: an electron emitting portion composed of a plurality of electron emitters formed on a cathode electrode, wherein the electron emitter is (A) for a cathode electrode. A step of forming an electron emission layer on the conductive material layer or the cathode electrode; and (B) by electrolyzing the electron emission layer to form a convex electron on the conductive material layer for the cathode electrode or a part of the cathode electrode. And a step of leaving the emission layer.

Second aspect of the present invention for achieving the above object
A method of manufacturing a cold cathode field emission display device according to another aspect is a method of manufacturing a cold cathode field emission display device including a so-called two-electrode type cold cathode field emission device. A cathode panel provided with a plurality of electron-emitting devices and an anode panel having a phosphor layer and an anode electrode are joined at their peripheral portions, and the cold cathode field electron-emitting device is (a) a support. Provided above,
A cathode electrode made of a conductive material layer for the cathode electrode,
(B) A method for manufacturing a cold cathode field emission display, comprising: an electron emitting portion composed of a plurality of electron emitters formed on a cathode electrode, wherein the electron emitter is (A) for a cathode electrode. Forming a base layer on the conductive material layer or the cathode electrode; and (B) leaving the convex base layer on the conductive material layer for the cathode electrode or a part of the cathode electrode by electrolyzing the base layer. , (C) a step of forming an electron emission layer on the conductive material layer for the cathode electrode or the cathode electrode, and on the base layer.

A third aspect of the present invention for achieving the above object.
A method of manufacturing a cold cathode field emission display device according to another aspect is a method of manufacturing a cold cathode field emission display device including a so-called three-electrode type cold cathode field emission device. A cathode panel provided with a plurality of electron-emitting devices and an anode panel having a phosphor layer and an anode electrode are joined at their peripheral portions, and the cold cathode field electron-emitting device is (a) a support. Provided above,
A cathode electrode made of a conductive material layer for the cathode electrode,
A cold cathode field electron including (b) an electron emitting portion formed of a plurality of electron emitting members formed on a cathode electrode, and (c) a gate electrode provided above the electron emitting portion and having an opening. A method of manufacturing an electron-emitting device, comprising:
(A) a step of forming an electron emission layer on the conductive material layer for the cathode electrode or the cathode electrode; and (B) electrolysis of the electron emission layer to form a part of the conductive material layer for the cathode electrode or the cathode electrode. It is characterized in that it is formed by a step of leaving a convex electron emission layer on the upper side.

A fourth aspect of the present invention for achieving the above object.
A method of manufacturing a cold cathode field emission display device according to another aspect is a method of manufacturing a cold cathode field emission display device including a so-called three-electrode type cold cathode field emission device. A cathode panel provided with a plurality of electron-emitting devices and an anode panel having a phosphor layer and an anode electrode are joined at their peripheral portions, and the cold cathode field electron-emitting device is (a) a support. Provided above,
A cathode electrode made of a conductive material layer for the cathode electrode,
A cold cathode field electron including (b) an electron emitting portion formed of a plurality of electron emitting members formed on a cathode electrode, and (c) a gate electrode provided above the electron emitting portion and having an opening. A method of manufacturing an electron-emitting device, comprising:
(A) a step of forming a base layer on the conductive material layer for the cathode electrode or the cathode electrode; The step of leaving the base layer of
(C) A step of forming an electron emission layer on the conductive material layer for the cathode electrode or the cathode electrode, and on the base layer.

A method of manufacturing an electron emitter according to the first or second aspect of the present invention, and the first to fourth aspects of the present invention.
Method for manufacturing a cold cathode field emission device according to any one of the above aspects, or a method for manufacturing a cold cathode field electron emission display device according to any one of the first to fourth aspects of the present invention (hereinafter collectively referred to simply as , Which may be referred to as the production method of the present invention), depending on the time of electrolysis, a convex electron emission layer left on a part of the substrate, a conductive material layer for a cathode electrode, or a cathode. The shape of the convex electron emission layer left on a part of the electrode, the conductive material layer for the cathode electrode or the convex base layer left on a part of the cathode electrode is an island shape (that is, When the substrate, the conductive material layer for the cathode electrode, or the cathode electrode is likened to the sea, a large number of convex electron emission layers and convex base layers are island-shaped), or a shape surrounding a pond. (That is, the base, cathode If it likened Yoshirubeden material layer or the cathode electrode into the pond, configure convex electron emission layer and convex base layer so as to surround the plurality of pond) and a. Note that these structures are called a sea / island structure for convenience.

In the cold cathode field emission display device obtained by the method of manufacturing the cold cathode field emission display device according to the first or second aspect of the present invention, the Based on the quantum tunnel effect, electrons are emitted from the electron emitting portion, the electrons are attracted to the anode electrode, and collide with the phosphor layer.
The anode electrode may have a structure in which one sheet of conductive material covers an effective region (a region functioning as an actual display portion), or may have a stripe shape. In the former case, the operation of the electron emitting portion is controlled for each electron emitting portion forming one pixel. For that purpose, for example, a switching element may be provided between the electron emission portion which constitutes one pixel and the cathode electrode control circuit. In the latter case, the cathode electrode is formed in a stripe shape, and the cathode electrode and the anode electrode are arranged so that the projected image of the anode electrode and the projected image of the cathode electrode are orthogonal to each other. Electrons are emitted from the electron emitting portion located in a region where the projected image of the anode electrode and the projected image of the cathode electrode overlap (hereinafter referred to as an anode electrode / cathode electrode overlapping region). In addition, one anode electrode /
The arrangement of the cold cathode field emission devices in the cathode electrode overlapping region may be regular or random.
The cold cathode field emission display device having such a structure is driven by a so-called simple matrix system. That is, a relatively negative voltage is applied to the cathode electrode and a relatively positive voltage is applied to the anode electrode. As a result, the electron-emitting portion located in the anode electrode / cathode electrode overlapping region of the column-selected cathode electrode and the row-selected anode electrode (or the row-selected cathode electrode and the column-selected anode electrode) is selected. Electron is emitted into the vacuum space, the electron is attracted to the anode electrode and collides with the phosphor layer constituting the anode panel to excite the phosphor layer,
Make it glow.

The cold cathode field electron emission device obtained by the method for manufacturing the cold cathode field emission device or the cold cathode field emission display device according to the third or fourth aspect of the present invention has a stripe shape. It is preferable that the projected image of the gate electrode and the projected image of the striped cathode electrode extend in a direction orthogonal to each other from the viewpoint of simplifying the structure of the cold cathode field emission device or the cold cathode field emission display device. .. In addition, in the gate electrode / cathode electrode overlapping region (electron emission region, which corresponds to a region for one pixel or a region for one subpixel) in which the projected images of the striped cathode electrode and the striped gate electrode overlap each other. One or more cold cathode field emission devices are provided and such overlapping areas are usually within the effective area of the cathode panel.
They are arranged in a two-dimensional matrix. The arrangement of the cold cathode field emission devices in one gate electrode / cathode electrode overlap region may be regular or random. A relatively negative voltage is applied to the cathode electrode, a relatively positive voltage is applied to the gate electrode, and a positive voltage higher than that of the gate electrode is applied to the anode electrode. Electron is
Selective from the electron emission part located in the gate electrode / cathode electrode overlap region where the column-selected cathode electrode and the row-selected gate electrode (or the row-selected cathode electrode and the column-selected gate electrode) overlap each other. Electrons are emitted into the vacuum space, and the electrons are attracted to the anode electrode and collide with the phosphor layer forming the anode panel to excite the phosphor layer to emit light.

A method of manufacturing a cold cathode field emission device according to the third or fourth aspect of the present invention, and the third aspect of the present invention.
In the cold cathode field emission device according to the fourth aspect or the method for manufacturing the cold cathode field emission display device, an insulating layer is formed on the support and the cathode electrode, and the insulating layer is formed on the insulating layer. A gate electrode is formed on the insulating layer, a second opening communicating with the opening provided in the gate electrode is formed in the insulating layer, and an electron emitting portion is exposed at the bottom of the second opening. Can be Note that such a configuration is referred to as a cold cathode field emission device having the first structure for convenience. Hereinafter, the opening provided in the gate electrode may be referred to as a first opening for convenience.

Alternatively, a method of manufacturing a cold cathode field emission device according to the third or fourth aspect of the present invention,
In the cold cathode field emission device according to the third aspect or the fourth aspect of the present invention or in the method of manufacturing a cold cathode field emission display device, a strip-shaped or double-sided gate electrode support made of an insulating material is used. So that the gate electrode made of a strip-shaped material having a plurality of openings formed on the support is in contact with the top surface of the gate electrode support and the opening is located above the electron-emitting portion. It is also possible to have a structure stretched over. In addition, such a configuration
For convenience, it is called a cold cathode field emission device having the second structure.

In the method of manufacturing the cold cathode field emission device or the method of manufacturing the cold cathode field emission display device according to the first aspect of the present invention, more specifically, the electron emitter is (1) ) A step of forming a conductive material layer for a cathode electrode on a support, (2) a step of forming a cathode electrode by patterning a conductive material layer for a cathode electrode, and (3) an electron emission layer on the cathode electrode. And (4) by electrolyzing the electron emission layer,
The step of leaving a convex electron emission layer on a part of the cathode electrode can be performed. Note that such a method is referred to as a 1A method for convenience.

Alternatively, in the method of manufacturing a cold cathode field emission device or the method of manufacturing a cold cathode field emission display device according to the first aspect of the present invention, the electron emitter is
More specifically, (1) a step of forming a conductive material layer for a cathode electrode on a support, (2) a step of forming a cathode electrode by patterning a conductive material layer for a cathode electrode, and (3) A step of forming an electron emission layer on the cathode electrode; (4) a step of electrolyzing the electron emission layer to leave a convex electron emission layer on a part of the cathode electrode; And a step of selectively removing unnecessary portions of the electron emission layer. Note that such a method is referred to as a 1B method for convenience.

Alternatively, in the method of manufacturing the cold cathode field emission device or the method of manufacturing the cold cathode field emission display device according to the first aspect of the present invention, the electron emitter is
More specifically, (1) a step of forming a conductive material layer for a cathode electrode on a support, (2) a step of forming a cathode electrode by patterning a conductive material layer for a cathode electrode, and (3) Forming an electron emission layer on the cathode electrode, (4) patterning the electron emission layer into a desired shape, and (5) electrolyzing the electron emission layer to form a part of the cathode electrode. It can be formed by a step of leaving a convex electron emission layer.
Note that such a method is referred to as a 1C method for convenience.

Alternatively, in the method of manufacturing the cold cathode field emission device or the method of manufacturing the cold cathode field emission display device according to the first aspect of the present invention, the electron emitter is
More specifically, (1) a step of forming a cathode electrode conductive material layer on a support, (2) a step of forming an electron emission layer on the cathode electrode conductive material layer, and (3) an electron. Patterning the emission layer into a desired shape; (4) forming the cathode electrode by patterning the conductive material layer for the cathode electrode; and (5) electrolyzing the electron emission layer to form the cathode electrode. It can be formed by a step of leaving a convex electron emission layer on a part. Note that such a method is referred to as a 1D method for convenience.

Alternatively, in the method of manufacturing the cold cathode field emission device or the method of manufacturing the cold cathode field emission display device according to the first aspect of the present invention, the electron emitter is:
More specifically, (1) a step of forming a cathode electrode conductive material layer on a support, (2) a step of forming an electron emission layer on the cathode electrode conductive material layer, and (3) an electron. A step of leaving a convex electron emitting layer on a part of the conductive material layer for the cathode electrode by electrolyzing the emitting layer;
It can be formed by (4) the step of selectively removing the unnecessary portion of the remaining electron emission layer and (5) the step of forming the cathode electrode by patterning the conductive material layer for the cathode electrode. In addition, such a method
For convenience, it is called the 1E method.

Alternatively, in the method for manufacturing a cold cathode field emission device or the method for manufacturing a cold cathode field emission display device according to the first aspect of the present invention, the electron emitter is
More specifically, (1) a step of forming a cathode electrode conductive material layer on a support, (2) a step of forming an electron emission layer on the cathode electrode conductive material layer, and (3) an electron. Patterning the emission layer into a desired shape; (4) electrolyzing the electron emission layer to leave a convex electron emission layer on a part of the conductive material layer for the cathode electrode; (5) The step of forming a cathode electrode by patterning the conductive material layer for the cathode electrode can be performed. Note that such a method is referred to as a 1F method for convenience.

The procedures of the methods 1A to 1F are listed in Table 1 below.

[Table 1]

In the method of manufacturing the cold cathode field emission device or the method of manufacturing the cold cathode field emission display device according to the second aspect of the present invention, more specifically, the electron emitter is (1) ) A step of forming a conductive material layer for a cathode electrode on a support, (2) a step of forming a cathode electrode by patterning a conductive material layer for a cathode electrode, and (3) forming a base layer on the cathode electrode. And the process of
(4) a step of leaving a convex base layer on a part of the cathode electrode by electrolyzing the base layer, and (5) a step of forming an electron emission layer on the cathode electrode and on the base layer.
Can be formed by. Note that such a method is referred to as a 2A method for convenience.

Alternatively, in the method for manufacturing a cold cathode field emission device or the method for manufacturing a cold cathode field emission display device according to the second aspect of the present invention, the electron emitter is
More specifically, (1) a step of forming a conductive material layer for a cathode electrode on a support, (2) a step of forming a cathode electrode by patterning a conductive material layer for a cathode electrode, and (3) Forming a base layer on the cathode electrode, and (4) electrolyzing the base layer to leave a convex base layer on a part of the cathode electrode,
It can be formed by (5) the step of selectively removing the remaining unnecessary portion of the base layer, and (6) the step of forming an electron emission layer on the cathode electrode and on the base layer. still,
Such a method is called a 2B method for convenience.

Alternatively, in the method of manufacturing a cold cathode field emission device or the method of manufacturing a cold cathode field emission display device according to the second aspect of the present invention, the electron emitter is
More specifically, (1) a step of forming a conductive material layer for a cathode electrode on a support, (2) a step of forming a cathode electrode by patterning a conductive material layer for a cathode electrode, and (3) Forming a base layer on the cathode electrode, (4) patterning the base layer into a desired shape, and (5) electrolyzing the base layer to leave a convex base layer on a part of the cathode electrode. Process,
(6) A step of forming an electron emission layer on the cathode electrode and on the base layer. Note that such a method is referred to as a 2C method for convenience.

Alternatively, in the method of manufacturing a cold cathode field emission device or the method of manufacturing a cold cathode field emission display device according to the second aspect of the present invention, the electron emitter is
More specifically, (1) a step of forming a conductive material layer for a cathode electrode on a support, (2) a step of forming a base layer on a conductive material layer for a cathode electrode, and (3) a desired base layer. And (4) forming a cathode electrode by patterning the conductive material layer for the cathode electrode, and (5) electrolyzing the base layer to form a convex shape on a part of the cathode electrode. Can be formed by the step of leaving the base layer, and (6) the step of forming an electron emission layer on the cathode electrode and on the base layer.
Note that such a method is referred to as a 2D method for convenience.

Alternatively, in the method of manufacturing the cold cathode field emission device or the method of manufacturing the cold cathode field emission display device according to the second aspect of the present invention, the electron emitter is
More specifically, (1) a step of forming a conductive material layer for a cathode electrode on a support, (2) a step of forming a base layer on a conductive material layer for a cathode electrode, and (3) an electrically conductive base layer. A step of leaving a convex base layer on a part of the conductive material layer for a cathode electrode by disassembling, (4) a step of selectively removing unnecessary portions of the remaining base layer, and (5) a cathode electrode It can be formed by a step of forming a cathode electrode by patterning a conductive material layer and (6) a step of forming an electron emission layer on the cathode electrode and on the base layer. Note that such a method is referred to as a second E method for convenience.

Alternatively, in the method of manufacturing the cold cathode field emission device or the method of manufacturing the cold cathode field emission display device according to the second aspect of the present invention, the electron emitter is
More specifically, (1) a step of forming a conductive material layer for a cathode electrode on a support, (2) a step of forming a base layer on a conductive material layer for a cathode electrode, and (3) a desired base layer. And (4) a step of leaving a convex base layer on a part of the cathode electrode conductive material layer by electrolyzing the base layer, and (5) patterning the cathode electrode conductive material layer. By doing so, it is possible to form the cathode electrode, and (6) the step of forming the electron emission layer on the cathode electrode and on the base layer. Note that such a method is referred to as a 2F method for convenience.

Alternatively, in the method of manufacturing a cold cathode field emission device or the method of manufacturing a cold cathode field emission display device according to the second aspect of the present invention, the electron emitter is
More specifically, (1) a step of forming a conductive material layer for a cathode electrode on a support, (2) a step of forming a cathode electrode by patterning a conductive material layer for a cathode electrode, and (3) Forming a base layer on the cathode electrode, and (4) electrolyzing the base layer to leave a convex base layer on a part of the cathode electrode,
It can be formed by (5) a step of forming an electron emission layer on the cathode electrode and on the base layer, and (6) a step of patterning the electron emission layer into a desired shape. still,
Such a method is called a 2G method for convenience.

Alternatively, in the method of manufacturing a cold cathode field emission device or the method of manufacturing a cold cathode field emission display device according to the second aspect of the present invention, the electron emitter is
More specifically, (1) a step of forming a conductive material layer for a cathode electrode on a support, (2) a step of forming a cathode electrode by patterning a conductive material layer for a cathode electrode, and (3) Forming a base layer on the cathode electrode, and (4) electrolyzing the base layer to leave a convex base layer on a part of the cathode electrode,
(5) a step of selectively removing the remaining unnecessary portion of the base layer, (6) a step of forming an electron emission layer on the cathode electrode and on the base layer, and (7) a desired shape of the electron emission layer. Can be formed by the step of patterning.
Note that such a method is referred to as a second H method for convenience.

Alternatively, in the method of manufacturing a cold cathode field emission device or the method of manufacturing a cold cathode field emission display device according to the second aspect of the present invention, the electron emitter is
More specifically, (1) a step of forming a conductive material layer for a cathode electrode on a support, (2) a step of forming a cathode electrode by patterning a conductive material layer for a cathode electrode, and (3) Forming a base layer on the cathode electrode, and (4) electrolyzing the base layer to leave a convex base layer on a part of the cathode electrode,
(5) A step of forming an electron emission layer on the cathode electrode and the base layer, (6) a step of patterning the electron emission layer into a desired shape, and (7) selective removal of unnecessary portions of the remaining base layer. It can be formed by a step of removing.
Note that such a method is referred to as a second I method for convenience.

Alternatively, in the method for manufacturing a cold cathode field emission device or the method for manufacturing a cold cathode field emission display device according to the second aspect of the present invention, the electron emitter is
More specifically, (1) a step of forming a conductive material layer for a cathode electrode on a support, (2) a step of forming a base layer on a conductive material layer for a cathode electrode, and (3) a desired base layer. And (4) patterning the conductive material layer for the cathode electrode to form the cathode electrode, and (5) electrolyzing the base layer to form a convex shape on a part of the cathode electrode. The step of leaving the base layer, the step of (6) forming the electron emitting layer on the cathode electrode and the base layer, and the step of (7) patterning the electron emitting layer into a desired shape. Note that such a method is referred to as a second J method for convenience.

Alternatively, in the method of manufacturing the cold cathode field emission device or the method of manufacturing the cold cathode field emission display device according to the second aspect of the present invention, the electron emitter is
More specifically, (1) a step of forming a conductive material layer for a cathode electrode on a support, (2) a step of forming a base layer on a conductive material layer for a cathode electrode, and (3) an electrically conductive base layer. A step of leaving a convex base layer on a part of the conductive material layer for a cathode electrode by disassembling, (4) a step of selectively removing unnecessary portions of the remaining base layer, and (5) a cathode electrode Forming a cathode electrode by patterning the conductive material layer; (6) forming an electron emission layer on the cathode electrode and on the base layer; and (7) patterning the electron emission layer into a desired shape. Can be formed by a process. Note that such a method is referred to as a 2K method for convenience.

Alternatively, in the method for manufacturing a cold cathode field emission device or the method for manufacturing a cold cathode field emission display device according to the second aspect of the present invention, the electron emitter is
More specifically, (1) a step of forming a conductive material layer for a cathode electrode on a support, (2) a step of forming a base layer on a conductive material layer for a cathode electrode, and (3) a desired base layer. And (4) a step of electrolyzing the base layer to leave a convex base layer on a part of the conductive material layer for the cathode electrode, and (5) patterning the conductive material layer for the cathode electrode. To form a cathode electrode, thereby forming an electron emission layer on the cathode electrode and on the base layer, and (7) patterning the electron emission layer into a desired shape. be able to. It should be noted that such a method is used for the sake of convenience in the second
Call the L method.

Alternatively, in the method of manufacturing the cold cathode field emission device or the method of manufacturing the cold cathode field emission display device according to the second aspect of the present invention, the electron emitter is
More specifically, (1) a step of forming a conductive material layer for a cathode electrode on a support, (2) a step of forming a base layer on a conductive material layer for a cathode electrode, and (3) an electrically conductive base layer. A step of leaving a convex base layer on a part of the conductive material layer for a cathode electrode by disassembling, (4) a step of selectively removing unnecessary portions of the remaining base layer, and (5) a cathode electrode A step of forming an electron emission layer on the conductive material layer and the base layer; (6) a step of patterning the electron emission layer into a desired shape; and (7) a cathode by patterning the conductive material layer for the cathode electrode. It can be formed by a step of forming an electrode. Note that such a method is referred to as a second M method for convenience.

Alternatively, in the method for manufacturing the cold cathode field emission device or the method for manufacturing the cold cathode field emission display device according to the second aspect of the present invention, the electron emitter is
More specifically, (1) a step of forming a conductive material layer for a cathode electrode on a support, (2) a step of forming a base layer on a conductive material layer for a cathode electrode, and (3) an electrically conductive base layer. A step of leaving a convex base layer on a part of the cathode electrode conductive material layer by decomposition, and (4) a step of forming an electron emission layer on the cathode electrode conductive material layer and on the base layer; (5) patterning the electron emission layer into a desired shape; (6) selectively removing unnecessary portions of the remaining base layer; and (7) patterning the conductive material layer for the cathode electrode to form the cathode. It can be formed by a step of forming an electrode. Note that such a method is referred to as a 2N-th method for convenience.

Alternatively, in the method of manufacturing a cold cathode field emission device or the method of manufacturing a cold cathode field emission display device according to the second aspect of the present invention, the electron emitter is
More specifically, (1) a step of forming a conductive material layer for a cathode electrode on a support, (2) a step of forming a base layer on a conductive material layer for a cathode electrode, and (3) a desired base layer. And (4) a step of leaving a convex base layer on a portion of the cathode electrode conductive material layer by electrolyzing the base layer, and (5) a cathode electrode conductive material layer, And a step of forming an electron emission layer on the base layer, (6) a step of patterning the electron emission layer into a desired shape, and (7) a step of forming a cathode electrode by patterning a conductive material layer for a cathode electrode. , Can be formed by. In addition, such a method
For convenience, it is referred to as the second O method.

The procedures of the methods 2A to 2O described above are listed in Tables 2 to 4 below.

[Table 2]

[Table 3]

[Table 4]

The method of manufacturing a cold cathode field electron emission device or the method of manufacturing a cold cathode field electron emission display device according to the third aspect of the present invention, which relates to the cold cathode field electron emission device having the first structure, More specifically, for the electron emitter, (1) a step of forming a conductive material layer for a cathode electrode on a support, and (2) a cathode electrode is formed by patterning the conductive material layer for a cathode electrode. By: (3) forming an electron emission layer on the cathode electrode, and (4) electrolyzing the electron emission layer,
A step of leaving a convex electron emission layer on a part of the cathode electrode, and (5) forming an insulating layer over the entire surface, then forming a gate electrode having a first opening, and further forming a first opening Can be formed by a step of forming a second opening communicating with the insulating layer in the insulating layer and exposing the electron emitter to the bottom of the second opening. In addition, for convenience, such a method is referred to as the 3A
Method.

Alternatively, a method of manufacturing a cold cathode field electron emission device or a method of manufacturing a cold cathode field electron emission display device according to the third aspect of the present invention, which relates to the cold cathode field electron emission device having the first structure. Then, the electron emitter is
More specifically, (1) a step of forming a conductive material layer for a cathode electrode on a support, (2) a step of forming a cathode electrode by patterning the conductive material layer for a cathode electrode, and (3) A step of forming an electron emission layer on the cathode electrode; (4) a step of leaving a convex electron emission layer on a part of the cathode electrode by electrolyzing the electron emission layer; And (6) forming an insulating layer over the entire surface, forming a gate electrode having a first opening, and communicating with the first opening. The second opening may be formed in the insulating layer and the electron emitter may be exposed at the bottom of the second opening. Note that such a method is referred to as a 3B method for convenience.

Alternatively, a method of manufacturing a cold cathode field electron emission device or a method of manufacturing a cold cathode field electron emission display device according to the third aspect of the present invention, which relates to the cold cathode field emission device having the first structure. Then, the electron emitter is
More specifically, (1) a step of forming a conductive material layer for a cathode electrode on a support, (2) a step of forming a cathode electrode by patterning a conductive material layer for a cathode electrode, and (3) Forming an electron emission layer on the cathode electrode, (4) patterning the electron emission layer into a desired shape, and (5) electrolyzing the electron emission layer to form a part of the cathode electrode. A step of leaving a convex electron emission layer, and (6) after forming an insulating layer on the entire surface, forming a gate electrode having a first opening, and
It can be formed by forming a second opening communicating with the first opening in the insulating layer and exposing the electron emitter at the bottom of the second opening. Note that such a method is referred to as a 3C method for convenience.

Alternatively, a method for manufacturing a cold cathode field electron emission device or a method for manufacturing a cold cathode field electron emission display device according to the third aspect of the present invention, which relates to the cold cathode field electron emission device having the first structure. Then, the electron emitter is
More specifically, (1) a step of forming a cathode electrode conductive material layer on a support, (2) a step of forming an electron emission layer on the cathode electrode conductive material layer, and (3) an electron. A step of leaving a convex electron emitting layer on a part of the conductive material layer for the cathode electrode by electrolyzing the emitting layer;
(4) a step of selectively removing the unnecessary portion of the remaining electron emission layer, and (5) a step of forming a cathode electrode by patterning the conductive material layer for a cathode electrode,
(6) After forming an insulating layer on the entire surface, a gate electrode having a first opening is formed, and a second opening communicating with the first opening is formed in the insulating layer, and a second opening is formed. The step of exposing the electron emitter to the bottom of the opening can be performed. Note that such a method is referred to as a 3D method for convenience.

Alternatively, a method of manufacturing a cold cathode field emission device or a method of manufacturing a cold cathode field emission display device according to the third aspect of the present invention relating to the cold cathode field emission device having the first structure. Then, the electron emitter is
More specifically, (1) a step of forming a cathode electrode conductive material layer on a support, (2) a step of forming an electron emission layer on the cathode electrode conductive material layer, and (3) an electron. Patterning the emission layer into a desired shape; (4) electrolyzing the electron emission layer to leave a convex electron emission layer on a part of the conductive material layer for the cathode electrode; (5) Forming a cathode electrode by patterning a conductive material layer for the cathode electrode, (6)
After forming an insulating layer on the entire surface, a gate electrode having a first opening is formed, and further, a second opening communicating with the first opening is formed in the insulating layer, and a second opening is formed. The step of exposing the electron emitter to the bottom can be performed. Note that such a method is referred to as a 3E method for convenience.

Alternatively, a method of manufacturing a cold cathode field emission device or a method of manufacturing a cold cathode field emission display device according to the third aspect of the present invention, which relates to the cold cathode field emission device having the first structure. Then, the electron emitter is
More specifically, (1) a step of forming a cathode electrode conductive material layer on a support, (2) a step of forming an electron emission layer on the cathode electrode conductive material layer, and (3) an electron. Patterning the emission layer into a desired shape; (4) forming the cathode electrode by patterning the conductive material layer for the cathode electrode; and (5) electrolyzing the electron emission layer to form the cathode electrode. A step of leaving a convex electron emission layer on a part, and (6) forming an insulating layer over the entire surface, forming a gate electrode having a first opening, and communicating with the first opening. It can be formed by a step of forming the second opening in the insulating layer and exposing the electron emitter at the bottom of the second opening. Note that such a method is referred to as a 3F method for convenience.

Alternatively, a method of manufacturing a cold cathode field emission device or a method of manufacturing a cold cathode field emission display device according to the third aspect of the present invention, which relates to the cold cathode field emission device having the first structure, is provided. Then, the electron emitter is
More specifically, (1) a step of forming a conductive material layer for a cathode electrode on a support, (2) a step of forming a cathode electrode by patterning a conductive material layer for a cathode electrode, and (3) A step of forming an electron emission layer on the cathode electrode, and (4) forming an insulating layer over the entire surface, forming a gate electrode having a first opening, and further forming a gate electrode communicating with the first opening. The second opening is formed in the insulating layer, and the second
Exposing the electron emission layer at the bottom of the opening of
(5) The electron-emitting layer exposed at the bottom of the second opening may be electrolyzed to form a convex electron-emitting layer on a part of the cathode electrode. Note that such a method is referred to as a 3G method for convenience.

Alternatively, a method of manufacturing a cold cathode field emission device or a method of manufacturing a cold cathode field emission display device according to the third aspect of the present invention, which relates to the cold cathode field emission device having the first structure. Then, the electron emitter is
More specifically, (1) a step of forming a conductive material layer for a cathode electrode on a support, (2) a step of forming a cathode electrode by patterning a conductive material layer for a cathode electrode, and (3) A step of forming an electron emission layer on the cathode electrode, (4) a step of patterning the electron emission layer into a desired shape, and (5) a gate having a first opening after forming an insulating layer on the entire surface. Forming electrodes, and
A step of forming a second opening communicating with the first opening in the insulating layer and exposing the electron emission layer at the bottom of the second opening; and (6) exposing the bottom of the second opening. By electrolyzing the electron emission layer, a step of leaving a convex electron emission layer on a part of the cathode electrode can be formed. Note that such a method is referred to as a 3H method for convenience.

Alternatively, a method of manufacturing a cold cathode field emission device or a method of manufacturing a cold cathode field emission display device according to the third aspect of the present invention, which relates to the cold cathode field emission device having the first structure. Then, the electron emitter is
More specifically, (1) a step of forming a conductive material layer for a cathode electrode on a support, (2) a step of forming a cathode electrode by patterning a conductive material layer for a cathode electrode, and (3) After forming an insulating layer on the entire surface, first
Forming a gate electrode having an opening of, further forming a second opening communicating with the first opening in the insulating layer, and exposing the cathode electrode at the bottom of the second opening,
(4) a step of forming an electron emission layer on the cathode electrode exposed at the bottom of the second opening; and (5) electrolysis of the electron emission layer to form a convex shape on a part of the cathode electrode. It can be formed by a step of leaving the electron emission layer. Note that such a method is referred to as a 3I method for convenience.

The procedures of the above third method to third method are listed in Tables 5 and 6 below.

[Table 5]

[Table 6]

The cold cathode field emission device having the first structure according to the fourth aspect of the present invention is not limited to the cold cathode field emission device manufacturing method or the cold cathode field emission display device manufacturing method. More specifically, for the electron emitter, (1) a step of forming a conductive material layer for a cathode electrode on a support, and (2) a cathode electrode is formed by patterning the conductive material layer for a cathode electrode. A step, and (3) a step of forming a base layer on the cathode electrode,
(4) electrolyzing the base layer to leave a convex base layer on a part of the cathode electrode; (5) forming an electron emission layer on the cathode electrode and on the base layer; ) After forming an insulating layer on the entire surface, a gate electrode having a first opening is formed, and a second opening communicating with the first opening is formed in the insulating layer, and a second opening is formed. The step of exposing the electron emitter to the bottom of the substrate can be performed. Note that such a method is referred to as a 4A method for convenience.

Alternatively, a method of manufacturing a cold cathode field emission device or a method of manufacturing a cold cathode field emission display device according to the fourth aspect of the present invention, which relates to the cold cathode field emission device having the first structure. Then, the electron emitter is
More specifically, (1) a step of forming a conductive material layer for a cathode electrode on a support, (2) a step of forming a cathode electrode by patterning a conductive material layer for a cathode electrode, and (3) Forming a base layer on the cathode electrode, and (4) electrolyzing the base layer to leave a convex base layer on a part of the cathode electrode,
(5) A step of selectively removing the remaining unnecessary portion of the base layer, (6) a step of forming an electron emission layer on the cathode electrode and on the base layer, and (7) an insulating layer is formed on the entire surface. rear,
Forming a gate electrode having a first opening;
Forming a second opening communicating with the opening in the insulating layer and exposing the electron emitter to the bottom of the second opening. Note that such a method is referred to as a 4B method for convenience.

Alternatively, a method of manufacturing a cold cathode field emission device or a method of manufacturing a cold cathode field emission display device according to the fourth aspect of the present invention, which relates to the cold cathode field emission device having the first structure. Then, the electron emitter is
More specifically, (1) a step of forming a conductive material layer for a cathode electrode on a support, (2) a step of forming a cathode electrode by patterning a conductive material layer for a cathode electrode, and (3) Forming a base layer on the cathode electrode, and (4) electrolyzing the base layer to leave a convex base layer on a part of the cathode electrode,
(5) A step of forming an electron emission layer on the cathode electrode and the base layer, (6) a step of patterning the electron emission layer into a desired shape, and (7) after forming an insulating layer on the entire surface,
Forming a gate electrode having a first opening;
Forming a second opening communicating with the opening in the insulating layer and exposing the electron emitter to the bottom of the second opening. Note that such a method is referred to as a 4C method for convenience.

Alternatively, a method of manufacturing a cold cathode field electron emission device or a method of manufacturing a cold cathode field electron emission display device according to the fourth aspect of the present invention, which relates to the cold cathode field electron emission device having the first structure. Then, the electron emitter is
More specifically, (1) a step of forming a conductive material layer for a cathode electrode on a support, (2) a step of forming a cathode electrode by patterning a conductive material layer for a cathode electrode, and (3) Forming a base layer on the cathode electrode, and (4) electrolyzing the base layer to leave a convex base layer on a part of the cathode electrode,
(5) a step of selectively removing the remaining unnecessary portion of the base layer, (6) a step of forming an electron emission layer on the cathode electrode and on the base layer, and (7) a desired shape of the electron emission layer. And (8) after forming an insulating layer on the entire surface, a gate electrode having a first opening is formed, and further,
It can be formed by forming a second opening communicating with the first opening in the insulating layer and exposing the electron emitter at the bottom of the second opening. Note that such a method is referred to as a 4D method for convenience.

Alternatively, a method of manufacturing a cold cathode field electron emission device or a method of manufacturing a cold cathode field electron emission display device according to the fourth aspect of the present invention, which relates to the cold cathode field electron emission device having the first structure. Then, the electron emitter is
More specifically, (1) a step of forming a conductive material layer for a cathode electrode on a support, (2) a step of forming a cathode electrode by patterning a conductive material layer for a cathode electrode, and (3) Forming a base layer on the cathode electrode, and (4) electrolyzing the base layer to leave a convex base layer on a part of the cathode electrode,
(5) A step of forming an electron emission layer on the cathode electrode and the base layer, (6) a step of patterning the electron emission layer into a desired shape, and (7) selective removal of unnecessary portions of the remaining base layer. And (8) after forming an insulating layer on the entire surface, a gate electrode having a first opening is formed, and further,
It can be formed by forming a second opening communicating with the first opening in the insulating layer and exposing the electron emitter at the bottom of the second opening. Note that such a method is referred to as a 4E method for convenience.

Alternatively, a method of manufacturing a cold cathode field emission device or a method of manufacturing a cold cathode field emission display device according to the fourth aspect of the present invention, which relates to the cold cathode field emission device having the first structure, is provided. Then, the electron emitter is
More specifically, (1) a step of forming a conductive material layer for a cathode electrode on a support, (2) a step of forming a base layer on a conductive material layer for a cathode electrode, and (3) an electrically conductive base layer. A step of leaving a convex base layer on a part of the conductive material layer for a cathode electrode by disassembling, (4) a step of selectively removing unnecessary portions of the remaining base layer, and (5) a cathode electrode Forming a cathode electrode by patterning the conductive material layer; (6) forming an electron emission layer on the cathode electrode and on the base layer; and (7) forming an insulating layer on the entire surface, A step of forming a gate electrode having a first opening, further forming a second opening communicating with the first opening in the insulating layer, and exposing the electron emitter at the bottom of the second opening; Can be formed by.
Note that such a method is referred to as a 4F method for convenience.

Alternatively, a method of manufacturing a cold cathode field emission device or a method of manufacturing a cold cathode field emission display device according to the fourth aspect of the present invention, which relates to the cold cathode field emission device having the first structure, is provided. Then, the electron emitter is
More specifically, (1) a step of forming a conductive material layer for a cathode electrode on a support, (2) a step of forming a base layer on a conductive material layer for a cathode electrode, and (3) an electrically conductive base layer. A step of leaving a convex base layer on a part of the conductive material layer for a cathode electrode by disassembling, (4) a step of selectively removing unnecessary portions of the remaining base layer, and (5) a cathode electrode Forming a cathode electrode by patterning the conductive material layer; (6) forming an electron emission layer on the cathode electrode and on the base layer; and (7) patterning the electron emission layer into a desired shape. Process and (8)
After forming an insulating layer on the entire surface, a gate electrode having a first opening is formed, and further, a second opening communicating with the first opening is formed in the insulating layer, and a second opening is formed. The step of exposing the electron emitter to the bottom can be performed. Note that such a method is referred to as a 4G method for convenience.

Alternatively, a method of manufacturing a cold cathode field electron emission device or a method of manufacturing a cold cathode field electron emission display device according to the fourth aspect of the present invention, which relates to the cold cathode field electron emission device having the first structure. Then, the electron emitter is
More specifically, (1) a step of forming a conductive material layer for a cathode electrode on a support, (2) a step of forming a base layer on a conductive material layer for a cathode electrode, and (3) a desired base layer. And (4) a step of leaving a convex base layer on a part of the cathode electrode conductive material layer by electrolyzing the base layer, and (5) patterning the cathode electrode conductive material layer. To form a cathode electrode, (6) a step of forming an electron emission layer on the cathode electrode and on the base layer, and (7) after forming an insulating layer on the entire surface, the first opening is formed. Forming a gate electrode having the first opening, further forming a second opening communicating with the first opening in the insulating layer, and exposing the electron emitter at the bottom of the second opening. it can. Note that such a method is referred to as a 4H method for convenience.

Alternatively, a method of manufacturing a cold cathode field electron emission device or a method of manufacturing a cold cathode field electron emission display device according to the fourth aspect of the present invention, which relates to the cold cathode field emission device having the first structure, is provided. Then, the electron emitter is
More specifically, (1) a step of forming a conductive material layer for a cathode electrode on a support, (2) a step of forming a base layer on a conductive material layer for a cathode electrode, and (3) a desired base layer. And (4) a step of leaving a convex base layer on a part of the cathode electrode conductive material layer by electrolyzing the base layer, and (5) patterning the cathode electrode conductive material layer. Forming a cathode electrode by doing so, (6) forming an electron emission layer on the cathode electrode and on the base layer, (7) patterning the electron emission layer into a desired shape, and (8) ) After forming an insulating layer on the entire surface, a gate electrode having a first opening is formed, and a second opening communicating with the first opening is formed in the insulating layer, and a second opening is formed. Exposing the electron emitter to the bottom of the Accordingly, it is possible to be formed. still,
Such a method is called a 4I method for convenience.

Alternatively, a method of manufacturing a cold cathode field electron emission device or a method of manufacturing a cold cathode field electron emission display device according to the fourth aspect of the present invention, which relates to the cold cathode field electron emission device having the first structure. Then, the electron emitter is
More specifically, (1) a step of forming a conductive material layer for a cathode electrode on a support, (2) a step of forming a base layer on a conductive material layer for a cathode electrode, and (3) a desired base layer. And (4) forming a cathode electrode by patterning the conductive material layer for the cathode electrode, and (5) electrolyzing the base layer to form a convex shape on a part of the cathode electrode. The step of leaving the base layer, (6) the step of forming an electron emission layer on the cathode electrode and the base layer, and (7) the step of forming an insulating layer over the entire surface, and then forming a gate electrode having a first opening. To form,
It can be formed by forming a second opening communicating with the first opening in the insulating layer and exposing the electron emitter at the bottom of the second opening. Note that such a method is referred to as a 4th J method for convenience.

Alternatively, a method of manufacturing a cold cathode field emission device or a method of manufacturing a cold cathode field emission display device according to the fourth aspect of the present invention relating to the cold cathode field emission device having the first structure. Then, the electron emitter is
More specifically, (1) a step of forming a conductive material layer for a cathode electrode on a support, (2) a step of forming a base layer on a conductive material layer for a cathode electrode, and (3) a desired base layer. And (4) patterning the conductive material layer for the cathode electrode to form the cathode electrode, and (5) electrolyzing the base layer to form a convex shape on a part of the cathode electrode. Leaving the base layer, (6) forming an electron emission layer on the cathode electrode and on the base layer, (7) patterning the electron emission layer into a desired shape, and (8) insulating the entire surface. After forming the layer, a gate electrode having a first opening is formed, a second opening communicating with the first opening is formed in the insulating layer, and an electron is formed at the bottom of the second opening. Formed by exposing the emitter Rukoto can. Note that such a method is referred to as a 4K method for convenience.

Alternatively, a method of manufacturing a cold cathode field electron emission device or a method of manufacturing a cold cathode field electron emission display device according to the fourth aspect of the present invention, which relates to the cold cathode field electron emission device having the first structure. Then, the electron emitter is
More specifically, (1) a step of forming a conductive material layer for a cathode electrode on a support, (2) a step of forming a base layer on a conductive material layer for a cathode electrode, and (3) an electrically conductive base layer. A step of leaving a convex base layer on a part of the conductive material layer for a cathode electrode by disassembling, (4) a step of selectively removing unnecessary portions of the remaining base layer, and (5) a cathode electrode A step of forming an electron emission layer on the conductive material layer and the base layer; (6) a step of patterning the electron emission layer into a desired shape; and (7) a cathode by patterning the conductive material layer for the cathode electrode. Step of forming an electrode, and (8) forming an insulating layer over the entire surface, forming a gate electrode having a first opening, and further forming a second opening communicating with the first opening with an insulating layer. Formed on the bottom surface of the second opening to form an electron emitter. Step of exposed, can be formed by. In addition, such a method is used for convenience of description in the fourth L
Method.

Alternatively, a method of manufacturing a cold cathode field electron emission device or a method of manufacturing a cold cathode field electron emission display device according to the fourth aspect of the present invention, which relates to the cold cathode field electron emission device having the first structure. Then, the electron emitter is
More specifically, (1) a step of forming a conductive material layer for a cathode electrode on a support, (2) a step of forming a base layer on a conductive material layer for a cathode electrode, and (3) an electrically conductive base layer. A step of leaving a convex base layer on a part of the cathode electrode conductive material layer by decomposition, and (4) a step of forming an electron emission layer on the cathode electrode conductive material layer and on the base layer; (5) patterning the electron emission layer into a desired shape; (6) selectively removing unnecessary portions of the remaining base layer; and (7) patterning the conductive material layer for the cathode electrode to form the cathode. Step of forming an electrode, and (8) forming an insulating layer over the entire surface, forming a gate electrode having a first opening, and further forming a second opening communicating with the first opening with an insulating layer. Formed on the bottom surface of the second opening to form an electron emitter. Step of exposed, can be formed by. It should be noted that such a method is used for convenience in the fourth M
Method.

Alternatively, a method of manufacturing a cold cathode field electron emission device or a method of manufacturing a cold cathode field electron emission display device according to the fourth aspect of the present invention, which relates to the cold cathode field emission device having the first structure. Then, the electron emitter is
More specifically, (1) a step of forming a conductive material layer for a cathode electrode on a support, (2) a step of forming a base layer on a conductive material layer for a cathode electrode, and (3) a desired base layer. And (4) a step of leaving a convex base layer on a portion of the cathode electrode conductive material layer by electrolyzing the base layer, and (5) a cathode electrode conductive material layer, And a step of forming an electron emission layer on the base layer, (6) a step of patterning the electron emission layer into a desired shape, and (7) a step of forming a cathode electrode by patterning a conductive material layer for a cathode electrode. When,
(8) After forming an insulating layer on the entire surface, a gate electrode having a first opening is formed, and a second opening communicating with the first opening is formed in the insulating layer, and a second opening is formed. The step of exposing the electron emitter to the bottom of the opening can be performed. Note that such a method is referred to as a 4N method for convenience.

Alternatively, a method of manufacturing a cold cathode field emission device or a method of manufacturing a cold cathode field emission display device according to the fourth aspect of the present invention, which relates to the cold cathode field emission device having the first structure. Then, the electron emitter is
More specifically, (1) a step of forming a conductive material layer for a cathode electrode on a support, (2) a step of forming a cathode electrode by patterning a conductive material layer for a cathode electrode, and (3) Forming a base layer on the cathode electrode, and (4) electrolyzing the base layer to leave a convex base layer on a part of the cathode electrode,
(5) After forming an insulating layer on the entire surface, a gate electrode having a first opening is formed, and a second opening communicating with the first opening is formed in the insulating layer, and a second opening is formed. Exposing the base layer and the cathode electrode to the bottom of the opening, and (6) second
The step of forming an electron emission layer on the cathode electrode and the base layer located at the bottom of the opening. Note that such a method is referred to as a fourth O method for convenience.

Alternatively, a method of manufacturing a cold cathode field electron emission device or a method of manufacturing a cold cathode field electron emission display device according to the fourth aspect of the present invention, which relates to the cold cathode field emission device having the first structure. Then, the electron emitter is
More specifically, (1) a step of forming a conductive material layer for a cathode electrode on a support, (2) a step of forming a cathode electrode by patterning a conductive material layer for a cathode electrode, and (3) Forming a base layer on the cathode electrode, and (4) electrolyzing the base layer to leave a convex base layer on a part of the cathode electrode,
(5) A step of selectively removing the remaining unnecessary portion of the base layer, and (6) after forming an insulating layer over the entire surface, forming a gate electrode having a first opening, and further forming a first opening. Forming a second opening in the insulating layer, the base opening and the cathode electrode being exposed at the bottom of the second opening, and (7)
The step of forming an electron emission layer on the cathode electrode and the base layer located at the bottom of the second opening can be performed. Note that such a method is referred to as a fourth P method for convenience.

Alternatively, a method of manufacturing a cold cathode field electron emission device or a method of manufacturing a cold cathode field electron emission display device according to the fourth aspect of the present invention, which relates to the cold cathode field electron emission device having the first structure. Then, the electron emitter is
More specifically, (1) a step of forming a conductive material layer for a cathode electrode on a support, (2) a step of forming a cathode electrode by patterning a conductive material layer for a cathode electrode, and (3) Forming a base layer on the cathode electrode, (4) patterning the base layer into a desired shape, and (5) electrolyzing the base layer to leave a convex base layer on a part of the cathode electrode. Process,
(6) After forming an insulating layer on the entire surface, a gate electrode having a first opening is formed, and a second opening communicating with the first opening is formed in the insulating layer, and a second opening is formed. Exposing the base layer and the cathode electrode to the bottom of the opening, and (7) the second
The step of forming an electron emission layer on the cathode electrode and the base layer located at the bottom of the opening. Note that such a method is referred to as a 4Q method for convenience.

Alternatively, a method of manufacturing a cold cathode field electron emission device or a method of manufacturing a cold cathode field electron emission display device according to the fourth aspect of the present invention, which relates to the cold cathode field electron emission device having the first structure. Then, the electron emitter is
More specifically, (1) a step of forming a conductive material layer for a cathode electrode on a support, (2) a step of forming a cathode electrode by patterning a conductive material layer for a cathode electrode, and (3) A step of forming a base layer on the cathode electrode, and (4) forming an insulating layer over the entire surface, forming a gate electrode having a first opening, and further forming a second electrode communicating with the first opening. Forming an opening in the insulating layer and exposing the base layer at the bottom of the second opening; and (5) electrolyzing the base layer exposed at the bottom of the second opening.
Leaving a convex base layer on a portion of the cathode electrode,
(6) The step of forming an electron emission layer on the cathode electrode and the base layer located at the bottom of the second opening. Incidentally, such a method is referred to as the fourth
Called R method.

Alternatively, a method of manufacturing a cold cathode field emission device or a method of manufacturing a cold cathode field emission display device according to the fourth aspect of the present invention relating to the cold cathode field emission device having the first structure. Then, the electron emitter is
More specifically, (1) a step of forming a conductive material layer for a cathode electrode on a support, (2) a step of forming a cathode electrode by patterning the conductive material layer for a cathode electrode, and (3) A step of forming a base layer on the cathode electrode; (4) a step of patterning the base layer into a desired shape; and (5) an insulating layer formed over the entire surface, and then forming a gate electrode having a first opening. And a step of forming a second opening communicating with the first opening in the insulating layer and exposing the base layer to the bottom of the second opening, and (6) exposing the base to the bottom of the second opening. By electrolyzing the formed base layer, leaving a convex base layer on a part of the cathode electrode,
(7) The step of forming an electron emission layer on the cathode electrode and the base layer located at the bottom of the second opening, Incidentally, such a method is referred to as the fourth
Call the S method.

Alternatively, a method of manufacturing a cold cathode field electron emission device or a method of manufacturing a cold cathode field electron emission display device according to the fourth aspect of the present invention, which relates to a cold cathode field electron emission device having the first structure. Then, the electron emitter is
More specifically, (1) a step of forming a conductive material layer for a cathode electrode on a support, (2) a step of forming a base layer on a conductive material layer for a cathode electrode, and (3) an electrically conductive base layer. A step of leaving a convex base layer on a part of the conductive material layer for a cathode electrode by disassembling, (4) a step of selectively removing unnecessary portions of the remaining base layer, and (5) a cathode electrode Forming a cathode electrode by patterning a conductive material layer; and (6) forming an insulating layer over the entire surface, forming a gate electrode having a first opening, and communicating with the first opening. Forming a second opening in the insulating layer and exposing the base layer and the cathode electrode at the bottom of the second opening; and (7) over the cathode electrode and the base layer located at the bottom of the second opening. Forming an electron emission layer on the It is possible. Note that such a method is referred to as a 4T method for convenience.

Alternatively, a method of manufacturing a cold cathode field electron emission device or a method of manufacturing a cold cathode field electron emission display device according to the fourth aspect of the present invention, which relates to a cold cathode field electron emission device having the first structure. Then, the electron emitter is
More specifically, (1) a step of forming a conductive material layer for a cathode electrode on a support, (2) a step of forming a base layer on a conductive material layer for a cathode electrode, and (3) a desired base layer. And (4) a step of leaving a convex base layer on a part of the cathode electrode conductive material layer by electrolyzing the base layer, and (5) patterning the cathode electrode conductive material layer. The step of forming a cathode electrode by performing the following steps: (6) forming an insulating layer over the entire surface, and then forming a gate electrode having a first opening, and
Forming a second opening communicating with the first opening in the insulating layer and exposing the base layer and the cathode electrode to the bottom of the second opening; and (7) positioning at the bottom of the second opening. Forming an electron emission layer on the cathode electrode and the base layer,
Can be formed by. Note that such a method is referred to as a 4U method for convenience.

Alternatively, a method of manufacturing a cold cathode field electron emission device or a method of manufacturing a cold cathode field electron emission display device according to the fourth aspect of the present invention, which relates to the cold cathode field emission device having the first structure, is provided. Then, the electron emitter is
More specifically, (1) a step of forming a conductive material layer for a cathode electrode on a support, (2) a step of forming a base layer on a conductive material layer for a cathode electrode, and (3) a desired base layer. And (4) forming a cathode electrode by patterning the conductive material layer for the cathode electrode, and (5) electrolyzing the base layer to form a convex shape on a part of the cathode electrode. Leaving the base layer, and (6) forming an insulating layer on the entire surface, forming a gate electrode having a first opening, and further forming a second opening communicating with the first opening with an insulating layer. And exposing the base layer and the cathode electrode to the bottom of the second opening,
(7) The step of forming an electron emission layer on the cathode electrode and the base layer located at the bottom of the second opening, Incidentally, such a method is referred to as the fourth
V method.

Alternatively, a method of manufacturing a cold cathode field electron emission device or a method of manufacturing a cold cathode field electron emission display device according to the fourth aspect of the present invention, which relates to the cold cathode field emission device having the first structure, is provided. Then, the electron emitter is
More specifically, (1) a step of forming a conductive material layer for a cathode electrode on a support, (2) a step of forming a base layer on a conductive material layer for a cathode electrode, and (3) a base layer is desired. And (4) forming a cathode electrode by patterning a conductive material layer for a cathode electrode, and (5) forming an insulating layer on the entire surface and then forming a gate having a first opening. Forming electrodes, and
Forming a second opening in the insulating layer that communicates with the first opening and exposing the base layer to the bottom of the second opening;
(6) a step of leaving a convex base layer on a part of the cathode electrode by electrolyzing the base layer exposed at the bottom of the second opening; and (7) positioning at the bottom of the second opening. The step of forming an electron emission layer on the cathode electrode and the base layer. Note that such a method is referred to as a 4W method for convenience.

Alternatively, a method of manufacturing a cold cathode field emission device or a method of manufacturing a cold cathode field emission display device according to the fourth aspect of the present invention relating to the cold cathode field emission device having the first structure. Then, the electron emitter is
More specifically, (1) a step of forming a conductive material layer for a cathode electrode on a support, (2) a step of forming a cathode electrode by patterning a conductive material layer for a cathode electrode, and (3) After forming an insulating layer on the entire surface, first
Forming a gate electrode having an opening of, further forming a second opening communicating with the first opening in the insulating layer, and exposing the cathode electrode at the bottom of the second opening,
(4) A step of forming a base layer on the cathode electrode exposed at the bottom of the second opening, and (5) a step of electrolyzing the base layer to leave a convex base layer on a part of the cathode electrode. And (6) forming an electron emission layer on the cathode electrode and the base layer located at the bottom of the second opening,
Can be formed by. Note that such a method is referred to as a 4X method for convenience.

The procedures of the above fourth method to fourth method are listed in Tables 7 to 10 below.

[Table 7]

[Table 8]

[Table 9]

[Table 10]

The cold cathode field emission device having the first structure and the method for manufacturing the cold cathode field emission device or the cold cathode field emission display device according to the third or fourth aspect of the present invention. In the manufacturing method of
When the electron emission layer (or the base layer) is formed after forming the opening of, for example, a mask layer in which the surfaces of the cathode electrode and the base layer (or the cathode electrode) are exposed is formed at the center of the bottom of the second opening. Then (that is, at least after forming the mask layer on the side wall of the second opening), the electron emission layer (or the base layer) is formed on the mask layer including the exposed surface of the cathode electrode and the base layer (or the cathode electrode). It may be formed. That is, the lift-off method may be adopted.

The mask layer is formed, for example, by applying a resist material layer on the entire surface and then forming a hole in the resist material layer located at the center of the bottom of the second opening based on the lithography technique. Can be done by. A portion of the cathode electrode and the base layer (or the cathode electrode) located at the bottom of the second opening, the side wall of the second opening,
With the sidewall of the first opening and the gate electrode covered with the mask layer, the electron emission layer (or the cathode electrode) and the base layer (or the cathode electrode) located at the center of the bottom of the second opening are formed (or Since the base layer is formed, it is possible to reliably prevent the cathode electrode and the gate electrode from being short-circuited by the material forming the electron emission layer (or the base layer).

In the manufacture of the three-electrode type cold cathode field emission device, a stripe-shaped gate electrode is formed on the insulating layer, and then the second electrode is formed on the insulating layer and the gate electrode.
Forming an insulating layer and forming a third opening in the second insulating layer, the second insulating layer is used as an etching mask to form an opening in the gate electrode, and the insulating layer is further formed. Alternatively, the second opening may be formed in. In this case, the second insulating layer functions as a kind of hard mask layer. Alternatively, after forming a stripe-shaped gate electrode on the insulating layer, a second insulating layer is formed on the insulating layer and the gate electrode, and a converging electrode having a hole is formed on the second insulating layer. After the formation, the third opening is formed in the second insulating layer, the opening is formed in the gate electrode, and the second opening is further formed in the insulating layer.

Here, with the converging electrode, the orbits of the emitted electrons emitted from the first opening toward the anode electrode are converged, whereby it is possible to improve the brightness and prevent optical crosstalk between adjacent pixels. It is an electrode for In a so-called high-voltage type display device in which the potential difference between the anode electrode and the cathode electrode is on the order of several kilovolts, and the distance between the anode electrode and the cathode electrode is relatively long,
Focusing electrodes are particularly effective. A relative negative voltage is applied to the focusing electrode from the focusing power supply. The focusing electrode does not necessarily have to be provided for each cold cathode field emission device, and for example, by extending along the predetermined arrangement direction of the cold cathode field emission devices, a plurality of cold cathode field emission devices can be obtained. It is also possible to exert a common focusing effect on the emitting elements.

Alternatively, in the method of manufacturing a cold cathode field emission device or the method of manufacturing a cold cathode field emission display device according to the third or fourth aspect of the present invention, (a) insulating material Forming a strip-shaped or double-sided gate electrode supporting part on the support, and forming the cathode electrode and the electron emitting part on the support, and (b) a strip-shaped material having a plurality of openings formed therein. A strip-shaped material is stretched so that the gate electrode made of is in contact with the top surface of the gate electrode supporting portion and the opening is located above the electron-emitting portion. (Sometimes called a manufacturing method).

The cold cathode field emission device having the second structure can be obtained by the fifth manufacturing method. still,
In the fifth manufacturing method, the electron emitter may be formed on the entire cathode electrode or may be formed only on a desired region of the cathode electrode.

In the fifth manufacturing method, when the gate electrode support portion is formed in a region between adjacent stripe-shaped cathode electrodes, or when a plurality of cathode electrodes form one cathode electrode group, adjacent cathode electrodes are formed. It may be formed in a region between the electrode groups. A conventionally known insulating material can be used as a material forming the gate electrode supporting portion. For example, a widely used low melting glass mixed with a metal oxide such as alumina, or an insulating material such as SiO ₂ can be used. Materials can be used. Examples of the method of forming the gate electrode support portion include a combination of a CVD method and an etching method, a screen printing method, a sandblast method, a dry film method, and a photosensitizing method. The dry film method is to laminate a photosensitive film on a support, remove the photosensitive film at the site where the gate electrode support is to be formed by exposure and development, and form the gate electrode support in the opening created by the removal. This is a method of burying an insulating material for baking and firing.
The photosensitive film is burned and removed by firing, and the insulating material for forming the gate electrode supporting portion, which is buried in the opening, remains to serve as the gate electrode supporting portion. The photosensitive method is a method in which an insulating material for forming a gate electrode supporting portion having photosensitivity is formed on a support, the insulating material is patterned by exposure and development, and then baking is performed.

The method of manufacturing the electron emitter according to the first aspect of the present invention, the method of manufacturing the cold cathode field emission device according to the first and third aspects of the present invention, or the first aspect of the present invention.
In the manufacturing method of the cold cathode field emission display according to the third aspect, the combination of the material forming the substrate or the cathode electrode and the material forming the electron emitting layer is
When the electron emission layer is electrolyzed, the substrate or the cathode electrode or the conductive material layer for the cathode electrode is not electrolyzed, and the work function of the material forming the substrate or the cathode electrode is Φ ₁ , and the material forming the electron emission layer. When the work function of is Φ ₂ , it is necessary to use a combination of materials satisfying Φ ₂ <Φ ₁ . Nickel (Ni), molybdenum (M
o), titanium (Ti), chromium (Cr), cobalt (C)
o), tungsten (W), zirconium (Zr), tantalum (Ta), iron (Fe), copper (Cu), platinum (P
t), zinc (Zn), cadmium (Cd), germanium (Ge), tin (Sn), lead (Pb), bismuth (B)
i), silver (Ag), gold (Au), indium (In),
At least one metal selected from the group consisting of niobium (Nb), aluminum (Al) and thallium (Tl), or an alloy or compound containing these elements (for example, nitride such as TiN or indium tin oxide). Conductive oxides), semiconductors such as silicon (Si), and the like, and a combination satisfying the above conditions may be appropriately selected from these materials. As a combination of the constituent materials and the material forming the electron emission layer, (tungsten,
Copper) and (tungsten, chromium) can be exemplified, but the invention is not limited thereto. As a method of forming the substrate or the cathode electrode and the electron emission layer, for example, an evaporation method such as an electron beam evaporation method or a hot filament evaporation method,
Examples thereof include a sputtering method, a CVD method, a combination of an ion plating method and an etching method, a screen printing method, a plating method, a lift-off method and the like. By the screen printing method or the plating method, it is possible to directly form the substrate, the cathode electrode or the electron emitting layer having a desired shape.

The method of manufacturing the electron emitter according to the second aspect of the present invention, the method of manufacturing the cold cathode field emission device according to the second and fourth aspects of the present invention, or the second aspect of the present invention.
In the method for manufacturing the cold cathode field emission display according to the fourth aspect, the combination of the material forming the substrate or the cathode electrode and the material forming the base layer is: The substrate, the cathode electrode, and the conductive material layer for the cathode electrode must be a combination of materials that are not electrolyzed. Nickel (Ni), molybdenum (M
o), titanium (Ti), chromium (Cr), cobalt (C)
o), tungsten (W), zirconium (Zr), tantalum (Ta), iron (Fe), copper (Cu), platinum (P
t), zinc (Zn), cadmium (Cd), germanium (Ge), tin (Sn), lead (Pb), bismuth (B)
i), silver (Ag), gold (Au), indium (In),
At least one metal selected from the group consisting of niobium (Nb), aluminum (Al) and thallium (Tl), or an alloy or compound containing these elements (for example, nitride such as TiN or indium tin oxide). Conductive oxides), semiconductors such as silicon (Si), and the like, and a combination satisfying the above conditions may be appropriately selected from these materials. Examples of the combination of the constituent materials and the material forming the base layer include (tungsten, copper) and (tungsten, chromium), but not limited to these. As a method of forming the substrate, the cathode electrode, or the base layer, for example, an evaporation method such as an electron beam evaporation method or a hot filament evaporation method, a sputtering method, a CVD method or a combination of an ion plating method and an etching method, a screen printing method, a plating method, a lift-off method. The law etc. can be mentioned. By the screen printing method or the plating method, it is possible to directly form the substrate, the cathode electrode or the base layer having a desired shape.

The method for producing an electron emitter according to the second aspect of the present invention, the method for producing a cold cathode field emission device according to the second and fourth aspects of the present invention, or the second aspect of the present invention.
In the manufacturing method of the cold cathode field emission display according to the fourth aspect, the material forming the electron emission layer is
It is necessary to use a material having a work function Φ smaller than that of the base layer and the cathode electrode. The material to be selected depends on the work function of the material of the electron emission layer, the gate electrode and the electron emission layer. And the magnitude of the desired emission electron current density. Typical constituent materials of the cathode electrode and the base layer in a normal field emission device include tungsten (Φ = 4.55 eV) and niobium (Φ =
4.02 to 4.87 eV), molybdenum (Φ = 4.53)
~ 4.95 eV), aluminum (Φ = 4.28), copper (Φ = 4.6), tantalum (Φ = 4.3), chromium (Φ)
= 4.5 eV) and silicon (Φ = 4.9). The electron emission layer needs to have a work function smaller than that of these constituent materials, and the value is approximately 3
It is preferably eV or less. As such constituent materials, carbon (Φ <1), cesium (Φ = 2.14), La
B ₆ (Φ = 2.66 to 2.76), BaO (Φ = 1.6)
˜2.7 eV), SrO (Φ = 1.25 to 1.6 e
V), Y ₂ O ₃ (Φ = 2.0 eV), CaO (Φ = 1.6)
~ 1.86 eV), BaS (Φ = 2.05 eV), Ti
N (Φ = 2.92 eV), ZrN (Φ = 2.92 eV)
Can be illustrated. A constituent material having a work function Φ of 2 eV or less is more preferable.

The method of manufacturing the electron emitter according to the second aspect of the present invention, the method of manufacturing the cold cathode field emission device according to the second and fourth aspects of the present invention, or the second aspect of the present invention.
In the manufacturing method of the cold cathode field emission display according to the fourth aspect, the particularly preferable constituent material of the electron emission layer is carbon, more specifically, diamond, nanocrystal diamond, graphite, Examples include nanocrystal graphite, carbon nanotubes, carbon nanofibers, and carbon sheets.
When the electron emission layer is made of these materials, the emission electron current density required for the cold cathode field emission display can be obtained at an electric field intensity of 5 × 10 ⁷ V / m or less. . Further, since these materials can be used as electric resistors, the emission electron currents obtained from the respective openings can be made uniform, so that it is possible to suppress the brightness variation when incorporated in a display device. Become. Furthermore, since these materials have extremely high resistance to the sputtering action by the ions of the residual gas in the display device, the life of the field emission device can be extended. Alternatively, graphite particles (powder), amorphous carbon particles (powder), DL
C (diamond-like carbon) particles (powder) can be mentioned. Further, tungsten (W) particles (powder), niobium (Nb) particles (powder), tantalum (Ta)
Particles (powder), titanium (Ti) particles (powder), molybdenum (Mo) particles (powder), chromium (Cr) particles (powder)
High melting point metal particles (powder); or particles of transparent conductive material such as ITO (indium tin oxide) (powder) can be used. The particle size of the particles (powder) is about 0.1
It is preferably in the range of μm to 1 μm.

When forming the electron emission layer from the various materials mentioned above, it is preferable to use a conductive composition in which these materials are dispersed in a dispersion medium. In addition, a pH adjusting agent, a drying agent, a curing agent, an antiseptic agent, and the like may be added to the conductive composition. The dispersion medium may be a binder that can also serve as a dispersion medium such as water glass, or may be water, or an organic material such as alcohol-based, ether-based, ketone-based, ester-based, or hydrocarbon-based. It may be a solvent. As the binder, in addition to glass, use thermoplastic resin such as vinyl chloride resin, polyolefin resin, polyamide resin, cellulose ester resin, fluororesin, or thermosetting resin such as epoxy resin, acrylic resin, polyester resin, etc. You can However, since the binder is generally inferior in conductivity, the added amount of the binder is such that the electric resistance value of the electron emitter formed is increased or particles (powder) are covered with the binder and the electron emission is not hindered. Is preferably selected. Water glass as specified in Japanese Industrial Standard (JIS) K1408 1
No. 4 to No. 4, or their equivalents can be used. Here, water glass refers to a concentrated aqueous solution of an alkali silicate salt obtained by dissolving silicon dioxide and an alkali. Nos. 1 to 4 are 4-grade grades based on the difference in the number of moles of silicon dioxide (SiO ₂ ) (about 2 to 4 moles) with respect to 1 mole of sodium oxide (Na ₂ O) which is a constituent of water glass. , The viscosities differ greatly. Alternatively, water glass containing K ₂ O as a main component can be used.

As a material for forming the gate electrode in the cold cathode field emission device having the first structure, tungsten (W), niobium (Nb), tantalum (Ta), titanium (Ti), molybdenum (Mo), chromium. (Cr), aluminum (Al), copper (Cu), gold (Au), silver (A
g), nickel (Ni), cobalt (Co), zirconium (Zr), iron (Fe), platinum (Pt) and zinc (Z)
n), at least one metal selected from the group consisting of: alloys or compounds containing these metal elements (eg, nitrides such as TiN); or semiconductors such as silicon (Si); ITO (indium tin oxide); Examples thereof include conductive metal oxides such as indium oxide and zinc oxide. When the electron emission layer or the base layer is electrolyzed after forming the gate electrode, it is necessary to select a material that does not electrolyze the gate electrode. To make a gate electrode, a CVD method, a sputtering method, an evaporation method,
A thin film made of the above-mentioned constituent materials is formed on the insulating layer by a known thin film forming technique such as an ion plating method, an electrolytic plating method, an electroless plating method, a screen printing method, a laser ablation method, and a sol-gel method. When the thin film is formed on the entire surface of the insulating layer, the thin film is patterned by using a known patterning technique to form a stripe-shaped gate electrode. The first opening may be formed in the gate electrode after forming the stripe-shaped gate electrode, or the first opening may be formed in the gate electrode at the same time when the stripe-shaped gate electrode is formed. Further, by forming a resist pattern on the insulating layer before forming the gate electrode conductive material layer, the gate electrode can be formed by the lift-off method. Furthermore, if vapor deposition is performed using a mask having holes corresponding to the shape of the gate electrode or screen printing is performed using a screen having such holes, patterning after film formation is unnecessary. Further, the gate electrode can be provided by appropriately selecting a belt-shaped material having an opening from the above-described materials and manufacturing it in advance, and fixing the belt-shaped material on the gate electrode support portion, whereby the second A cold cathode field emission device having the structure of can be obtained.

In the manufacturing method of the present invention, a resistor layer may be formed on the substrate, the cathode electrode, or the conductive material layer for the cathode electrode. As a material forming the resistor layer, a material having a resistivity of 1 MΩ · cm or more, specifically, SiCN, SiC, Si, high resistance p-type Si, high resistance n-type Si, SiN, or ruthenium oxide (RuO)
₂ ), materials such as high melting point metal oxides such as tantalum oxide and tantalum nitride.

In the cold cathode field emission display, the anode panel comprises a substrate, a phosphor layer and an anode electrode. The electron-irradiated surface is composed of a phosphor layer or an anode electrode, depending on the structure of the anode panel.

The constituent material of the anode electrode may be appropriately selected depending on the structure of the cold cathode field emission display. That is, when the cold cathode field emission display is a transmissive type (the anode panel corresponds to the display surface) and the anode electrode and the phosphor layer are laminated in this order on the substrate, the substrate is Originally, the anode electrode itself also needs to be transparent, and a transparent conductive material such as ITO (indium tin oxide) is used, but the anode electrode may be opaque depending on the configuration. On the other hand, when the cold cathode field emission display is a reflection type (the cathode panel corresponds to the display surface) and even when it is a transmission type, the phosphor layer and the anode electrode are laminated in this order on the substrate. In this case, the materials described above in connection with the cathode electrode and the gate electrode other than ITO can be appropriately selected and used.

As the phosphor constituting the phosphor layer, a phosphor for fast electron excitation or a phosphor for slow electron excitation can be used. When the cold cathode field emission display is a single color display, the phosphor layer may not be particularly patterned. When the cold cathode field emission display is a color display, phosphor layers corresponding to the three primary colors of red (R), green (G) and blue (B) patterned in stripes or dots are alternately arranged. It is preferable to arrange them in
The gap between the patterned phosphor layers may be filled with a black matrix for the purpose of improving the contrast of the display screen.

As an example of the constitution of the anode electrode and the phosphor layer,
(1) A structure in which an anode electrode is formed on a substrate and a phosphor layer is formed on the anode electrode, (2) a phosphor layer is formed on a substrate, and an anode electrode is formed on the phosphor layer The configuration can be mentioned. In the configuration of (1), a so-called metal back film that is electrically connected to the anode electrode may be formed on the phosphor layer. In addition, in the configuration of (2), a metal back film may be formed on the anode electrode.

In the cold cathode field emission device, the planar shape of the first opening or the second opening (the shape when the opening is cut by a virtual plane parallel to the surface of the support) is circular or elliptical. , A rectangle, a polygon, a rounded rectangle, a rounded polygon, or any other shape. First
Can be formed by, for example, isotropic etching, a combination of anisotropic etching and isotropic etching, or the first opening can be formed depending on the method of forming the gate electrode. It can also be formed directly. The formation of the second opening can also be performed by, for example, isotropic etching or a combination of anisotropic etching and isotropic etching. The gate electrode is provided with one first opening, and the insulating layer is provided with one second opening communicating with the one first opening provided in the gate electrode. One electron emitting portion may be provided in the second opening portion, or a plurality of first opening portions may be provided in the gate electrode,
One second opening communicating with the plurality of first openings provided in the gate electrode is provided in the insulating layer, and one or a plurality of electrons are provided in one second opening provided in the insulating layer. A discharge part may be provided.

As the constituent material of the insulating layer and the second insulating layer,
SiO ₂ , SiN, SiON, SOG (spin on glass), low melting point glass, and glass paste can be used alone or in appropriate combination. Insulation layer or second
A known process such as a CVD method, a coating method, a sputtering method, or a screen printing method can be used for forming the insulating layer.

At least the surface of the support constituting the cathode panel should be made of an insulating material, and a glass substrate, a glass substrate having an insulating film formed on the surface thereof, a quartz substrate, and an insulating film formed on the surface thereof Examples thereof include a quartz substrate and a semiconductor substrate having an insulating film formed on the surface thereof. However, from the viewpoint of manufacturing cost reduction, it is preferable to use a glass substrate or a glass substrate having an insulating film formed on the surface. The substrate that constitutes the anode panel can also be configured in the same manner as the support. Also in the electron emitter of the present invention, the substrate needs to be formed on the support, and the support may be made of an insulating material or the above-mentioned material.

When the cathode panel and the anode panel are joined at their peripheral portions, the joining may be performed by using an adhesive layer, or a frame body made of an insulating rigid material such as glass or ceramics and an adhesive layer may be used together. You may go.
When the frame and the adhesive layer are used together, by appropriately selecting the height of the frame, the facing distance between the cathode panel and the anode panel is set to be longer than that when only the adhesive layer is used. It is possible to Although frit glass is generally used as a constituent material of the adhesive layer, a so-called low melting point metal material having a melting point of about 120 to 400 ° C. may be used. Such low melting point metal materials include In (indium: melting point 157 ° C.); indium-gold low melting point alloy; Sn ₈₀ Ag ₂₀ (melting point 220 to 370 ° C.), S
Tin (Sn) such as n ₉₅ Cu ₅ (melting point 227 to 370 ° C)
System high temperature solder; Pb _97.5 Ag _2.5 (melting point 304 ° C),
Pb _94.5 Ag _5.5 (melting point 304-365 ° C), Pb
Lead (Pb) such as _97.5 Ag _1.5 Sn _1.0 (melting point 309 ° C)
-Based high temperature solder; Zn ₉₅ Al ₅ (melting point 380 ° C) and other zinc (Zn) -based high temperature solder; Sn ₅ Pb ₉₅ (melting point 300-
314 ° C.), Sn ₂ Pb ₉₈ (melting point 316 to 322 ° C.) and other standard tin-lead solder; Au ₈₈ Ga ₁₂ (melting point 38
1 ° C) brazing filler metal (the above subscripts all represent atomic%)
Can be illustrated.

When the cathode panel, the anode panel and the frame body are joined together, they may be joined together at the same time,
Alternatively, either the cathode panel or the anode panel may be joined to the frame in the first step, and the other cathode panel or the anode panel may be joined to the frame in the second step. If the three-way simultaneous bonding and the bonding in the second stage are performed in a high vacuum atmosphere, the space surrounded by the cathode panel, the anode panel, the frame and the adhesive layer becomes a vacuum at the same time as the bonding. Alternatively, after the three members are joined together, the space surrounded by the cathode panel, the anode panel, the frame body, and the adhesive layer can be evacuated to create a vacuum. When exhausting is performed after joining, the pressure of the atmosphere during joining may be either normal pressure or reduced pressure, and the gas forming the atmosphere may be atmospheric air, or nitrogen gas or Group 0 of the periodic table. It may be an inert gas containing a gas belonging to (for example, Ar gas).

When the exhaust is performed after the bonding, the exhaust can be performed through a tip tube previously connected to the cathode panel and / or the anode panel. The tip tube is typically constructed using a glass tube, and the cathode panel and / or
Alternatively, frit glass or the above-mentioned low-melting point metal material is used to join the periphery of the through-hole provided in the invalid area (area that does not function as the actual display area) of the anode panel, and the space reaches a predetermined vacuum degree. After that, it is sealed off by heat fusion. It should be noted that if the entire cold cathode field emission display is once heated and then cooled before the sealing, residual gas can be released into the space, and this residual gas can be removed to the outside of the space by exhaust. Therefore, it is preferable.

In the present invention, a convex electron-emitting layer or base layer is left on a part of the substrate, or on the conductive material layer for the cathode electrode or a part of the cathode electrode by electrolysis. Even in the area, it is possible to form the electron emitter or the electron emitting portion having the uneven portion uniformly and with good controllability.

[0130]

BEST MODE FOR CARRYING OUT THE INVENTION The present invention will be described below with reference to the drawings on the basis of an embodiment of the invention (hereinafter, simply referred to as an embodiment).

(Embodiment 1) Embodiment 1 is a method for manufacturing an electron emitter according to the first aspect of the present invention, and a cold cathode field emission device (hereinafter referred to as an electric field) according to the first aspect of the present invention. (Abbreviated as emission element), and the first aspect of the present invention.
Of the cold cathode field emission display device (hereinafter, abbreviated as a display device) according to the above aspect, more specifically,
Regarding method 1A. The field emission device obtained in the first embodiment is a so-called two-electrode type.

FIG. 1 shows a schematic partial cross-sectional view of the display device according to the first embodiment, and FIG. 2C shows a schematic partial cross-sectional view of one field emission device.

The electron emitter 15 in the first embodiment is
It is composed of a convex electron emission layer 20 formed on a substrate (specifically, in the first embodiment, the cathode electrode 11 having a stripe shape). The convex electron emission layer 20 has a sea / island structure.

Alternatively, the field emission device according to the first embodiment is formed on the support 10 and the striped cathode electrode 11 made of the conductive material layer 11A for the cathode electrode, and on the cathode electrode 11. It is composed of an electron emitting portion 15 composed of a plurality of electron emitters 15A. The electron emitter 15A is a convex electron emission layer 2 formed on a part of the striped cathode electrode 11.
It consists of zero.

Furthermore, the display device of the first embodiment has a cathode panel C provided with a plurality of these field emission devices.
An anode panel AP including P and the phosphor layer 32 (red light emitting phosphor layer 32R, green light emitting phosphor layer 32G, blue light emitting phosphor layer 32B) and the anode electrode 33 is joined at their peripheral portions. Consists of The anode electrode 33 has a stripe shape, and the projected image of the anode electrode 33 and the projected image of the cathode electrode 11 are orthogonal to each other. Specifically, the cathode electrode 11 extends in the direction perpendicular to the paper surface of FIG. 1, and the anode electrode 33 extends in the lateral direction of the paper surface of FIG. The phosphor layer 32 is formed on the substrate 30 according to a predetermined pattern (for example, dot shape or stripe shape), and the anode electrode 33 is formed on the phosphor layer 32. The anode electrode 33 is made of, for example, an aluminum thin film. Substrate 3 Between Phosphor Layer 32 and Phosphor Layer 32
Although the black matrix 31 is formed on 0, the black matrix 31 may be omitted. In addition, when a monochromatic display device is assumed, the phosphor layer 32
Need not necessarily be provided according to a predetermined pattern. One pixel is composed of an anode electrode / cathode electrode overlapping region in which the striped cathode electrode 11 and the striped anode electrode 33 overlap. In the effective area, such pixels are arranged in a two-dimensional matrix in the order of hundreds of thousands to millions, for example. still,
The substrate 30 has an anode electrode made of a transparent conductive film such as ITO.
And the phosphor layer 32, or alternatively, the anode electrode 3 made of a transparent conductive film provided on the substrate 30.
3, a phosphor layer 32 and a black matrix 31 formed on the anode electrode 33, and aluminum formed on the phosphor layer 32 and the black matrix 31, and light electrically connected to the anode electrode 33. It can also be composed of a reflective conductive film.

Further, between the cathode panel CP and the anode panel AP, spacers 35 are arranged at equal intervals in the effective region as an auxiliary means for keeping the distance between both panels constant. The shape of the spacer 35 is
The shape is not limited to the cylindrical shape, and may be, for example, a spherical shape or a stripe-shaped partition wall (rib). In addition, the spacer 35
Are not necessarily arranged at the four corners of the overlapping region of all the cathode electrodes, and may be arranged more sparsely or irregularly arranged.

In the display device of the first embodiment, electrons are emitted from the electron emitting portion 15 based on the quantum tunnel effect based on the electric field formed by the anode electrode 33, and the electrons are attracted to the anode electrode 33. , Collide with the phosphor layer 32. The display device having such a configuration is driven by a so-called simple matrix system.
That is, a relatively negative voltage is applied to the cathode electrode 11,
A relatively positive voltage is applied to the anode electrode 33. As a result, electrons located in the anode electrode / cathode electrode overlap region of the column-selected cathode electrode 11 and the row-selected anode electrode 33 (or the row-selected cathode electrode 11 and the column-selected anode electrode 33). Electrons are selectively emitted from the emitting portion into the vacuum space, and the electrons are attracted to the anode electrode 33 and collide with the phosphor layer 32 constituting the anode panel AP to excite the phosphor layer 32 to emit light. The cathode electrode 11 and the anode electrode 33 are electrically controlled by the cathode electrode control circuit 40 and the anode electrode control circuit 42.

A through hole (not shown) for vacuum evacuation is provided in the ineffective region of the cathode panel CP, and a tip tube (not shown) which is closed off after vacuum evacuation is connected to this through hole. Has been done. The frame 34 is made of ceramics or glass and has a height of 1.0 mm, for example. In some cases, only the adhesive layer may be used instead of the frame 34.

Hereinafter, the electron emitter according to the first embodiment,
A method of manufacturing a field emission device and a display device will be described with reference to FIG. 2 which is a schematic partial end view of a support and the like.

[Step-100] First, the cathode electrode conductive material layer 11A (conductive substrate) is formed. Specifically, a cathode electrode conductive material layer 11A made of tungsten (W) and having a thickness of 0.2 μm is formed on the support 10 by a sputtering method.

[Step-110] After that, the stripe-shaped cathode electrode 11 is formed by patterning the cathode electrode conductive material layer 11A based on the lithography technique and the etching technique (see FIG. 2A). The cathode electrode 11 extends in the direction perpendicular to the paper surface of FIG.

[Step-120] Next, on the cathode electrode 11 which is a conductive substrate (more specifically, on the entire surface),
The electron emission layer 20 is formed (see FIG. 2B). Specifically, an electron emission layer 20 made of chromium (Cr) or copper (Cu) and having a thickness of 0.05 μm is formed on the support 10 and the cathode electrode 11 by the sputtering method.

[Step-130] After that, the electron emission layer 20
Is electrolyzed to leave a convex electron emission layer 20 on a part of the cathode electrode 11 as a base (FIG. 2).
(See (C)). Specifically, the entire support 10 is immersed in an aqueous ammonia solution. Then, the electron emission layer 20 is electrolyzed using stainless steel as a cathode and the cathode electrode 11 as an anode. The conditions of electrolysis are shown in Table 11 below.
For example. This makes it possible to obtain a structure in which the electron emission layer 20 is left in an island shape when the cathode electrode 11 and the support body 10 are regarded as the sea. Although the electron emission layer 20 is left on the support 10, no electrons are emitted from the portion of the electron emission layer 20 and the cathode electrode 1
No short circuit will occur between the two. In the figure,
Although it is illustrated that the electron emission layers 20 are regularly left, the electron emission layers 20 are actually left randomly. Also in the following embodiments, when the electron emitting layer or the base layer is electrolyzed, the electron emitting layer or the base layer is left at random.

[Table 11] Voltage: 20 volts Processing time: 10 seconds Used cathode: Stainless steel plate

[Step-140] Then, the display device is assembled. Specifically, the anode panel AP and the cathode panel CP are arranged so that the phosphor layer 32 and the field emission device face each other, and the anode panel AP and the cathode panel CP (more specifically, the substrate 30 and the support body). And 10) are joined at the peripheral edge via the frame 34. At the time of joining, frit glass is applied to a joining portion between the frame 34 and the anode panel AP and a joining portion between the frame 34 and the cathode panel CP, and the anode panel AP, the cathode panel CP and the frame 34 are bonded together. After frit glass is dried by preliminary firing, 10 ~ 3 at about 450 ° C
Perform main firing for 0 minutes. Then, the space surrounded by the anode panel AP, the cathode panel CP, the frame 34, and the frit glass is exhausted through a through hole (not shown) and a tip tube (not shown), and the pressure of the space is 10 ^−4. Pa
When the degree is reached, the tip tube is sealed by heating and melting. In this way, the space surrounded by the anode panel AP, the cathode panel CP, and the frame 34 can be evacuated. After that, wiring with necessary external circuits is performed to complete the display device.

An example of a method of manufacturing the anode panel AP in the display device shown in FIG. 1 will be described below with reference to FIG. 3 which is a schematic partial end view of a substrate and the like.

First, a luminescent crystal particle composition is prepared.
For that purpose, for example, a dispersant is dispersed in pure water, and stirring is performed for 1 minute at 3000 rpm using a homomixer. Next, the luminescent crystal particles are put into pure water in which a dispersant is dispersed, and agitated at 5000 rpm for 5 minutes using a homomixer. Then, for example, polyvinyl alcohol and ammonium dichromate are added, sufficiently stirred, and filtered.

In manufacturing the anode panel AP, a photosensitive film 50 is formed on the entire surface of a substrate 30 made of, for example, glass.
Is formed (applied). Then, the photosensitive film 50 formed on the substrate 30 is exposed by the ultraviolet rays emitted from the exposure light source (not shown) and passed through the hole 54 provided in the mask 53 to form the photosensitive area 51 ( Figure 3 (A)
reference). Then, the photosensitive film 50 is developed and selectively removed, and the remaining portion of the photosensitive film (the photosensitive film after exposure and development)
52 is left on the substrate 30 (see FIG. 3B). next,
The carbon agent (carbon slurry) is applied to the entire surface, dried and baked, and then the remaining 5 of the photosensitive film is formed by the lift-off method.
By removing 2 and the carbon agent thereon, the black matrix 31 made of the carbon agent is formed on the exposed substrate 30, and at the same time, the remaining portion 52 of the photosensitive film is removed (see FIG. 3C). ). Then, the red, green, and blue phosphor layers 32 are formed on the exposed substrate 30 (see FIG. 3D). Specifically, a luminescent crystal particle composition prepared from each luminescent crystal particle (phosphor particle) is used, and, for example, a red photosensitive luminescent crystal particle composition (phosphor slurry) is applied to the entire surface. After coating, exposing and developing, then coating the whole surface with a green photosensitive luminescent crystal particle composition (phosphor slurry), exposing and developing, and further blue photosensitive luminescent crystal particle composition. (Phosphor slurry) may be applied over the entire surface, exposed and developed. After that, the phosphor layer 3
2 and the black matrix 31, an anode electrode 33 (having a stripe shape) made of an aluminum thin film having a thickness of about 0.07 μm is formed by a sputtering method. Each phosphor layer 32 can be formed by a screen printing method or the like.

In [Step-100], after forming the cathode electrode conductive material layer 11A, a silicon carbide (SiC) layer, for example, is formed thereon by a sputtering method, and [Step-110]. In, the SiC layer and the cathode electrode conductive material layer 11A may be patterned. As a result, the resistor layer can be formed between the cathode electrode and the electron emission layer, and the emission of electrons from the electron emission portion can be made uniform.

After [Step-130], the unnecessary portion of the electron emission layer 20 left by the lithography technique and the etching technique (for example, the electron emission layer 20 on the support 10 or the anode electrode / cathode) is also used. The electron emission layer 20 on the cathode electrode 11 other than the electrode overlap region, or alternatively, the electron emission layer 20 on the support 10 and the electron emission layer 20 on the cathode electrode 11 other than the anode electrode / cathode electrode overlap region are selectively selected. May be removed.

One pixel is arranged in the effective area of the anode panel AP so as to face the electron emitting portion 15 and the electron emitting portion 15 formed on the rectangular cathode electrode 11 on the cathode panel side. You may comprise by the fluorescent substance layer 32. In such a display device,
The voltage applied to the cathode electrode 11 is controlled on a pixel-by-pixel basis. The planar shape of the cathode electrode 11 is substantially rectangular, as schematically shown in the perspective view of FIG. 4, and each cathode electrode 11 is provided with a wiring 11A and a switching element (not shown) including, for example, a transistor. Connected to the cathode electrode control circuit 40. In addition, the anode electrode 3
3 is connected to the anode electrode control circuit 42. The anode electrode 33 may have a structure in which one sheet of conductive material covers the effective area. Depending on the case, it may be an anode electrode of a type in which one or a plurality of electron emitting portions or an anode electrode unit corresponding to one or a plurality of pixels is assembled. When a voltage equal to or higher than the threshold voltage is applied to each cathode electrode 11, the electron emitting portion (formed on the cathode electrode 11 based on the quantum tunnel effect based on the electric field formed by the anode electrode 33. (Not shown) is emitted from the electron emitter, which is attracted to the anode electrode 33 and collides with the phosphor layer 32. The brightness of the cathode electrode 1
It is controlled by the voltage applied to unity.

In the production of the field emission device having such a structure, in [Step-100], a conductive material layer for the cathode electrode is formed on the support 10 made of, for example, a glass substrate, and then in [Step-110]. The rectangular cathode electrode 11 is formed on the support 10 by patterning the cathode electrode conductive material layer based on the lithography technique and the reactive ion etching method (RIE method). At the same time, the wiring 11A (see FIG. 4) connected to the cathode electrode 11 is formed on the support 10. After that, [Step-120] to [Step-140] may be executed.

The order of [Step-110] to [Step-130] and the patterning or selective removal of the electron-emitting layer can be variously changed as shown in Table 1.

Further, in [Step-120], graphite, carbon nanotubes, or SiC are coated in a state where the region other than the cathode electrode 11 which is a conductive substrate is covered with a mask layer.
By applying a mixed solution of a solvent, an alkali-soluble resin, and a solvent to the entire surface by spin coating, removing the solvent, and then removing the mask layer, graphite or graphite on the cathode electrode 11 that is a conductive substrate is removed. The electron emitting layer composed of carbon nanotubes, SiC, and an alkali-soluble resin is left, and in step [130], a convex electron emitting layer 20 is formed on a part of the cathode electrode 11 which is a substrate based on the electrophoresis method. You can also leave.

(Embodiment 2) Embodiment 2 is a method for manufacturing an electron emitter according to the second aspect of the present invention, a method for manufacturing a field emission device according to the second aspect of the present invention, and the present invention. The present invention relates to a method for manufacturing a display device according to a second aspect of the invention, and more specifically, to a second H method. The field emission device obtained in the second embodiment is a so-called two-electrode type.

A schematic partial cross-sectional view of one field emission device in the display device of the second embodiment is shown in FIG. 6 (C). Cathode panel C in the display device according to the second embodiment
P and the structure of the anode panel AP are substantially the same as those of the cathode in the display device of the first embodiment shown in the schematic partial sectional view of FIG. 1, as shown in the schematic partial sectional view of FIG. Since the structures of the panel CP and the anode panel AP can be substantially the same, detailed description thereof will be omitted.

The electron emitter 15 in the second embodiment is
Substrate (specifically, in the second embodiment, striped cathode electrode 11), convex base layer 21 formed on a part of the substrate, and electron formed on the substrate and base layer 21. It consists of the emission layer 22.

Alternatively, the field emission device according to the second embodiment is formed on the support 10 and the stripe-shaped cathode electrode 11 made of the conductive material layer 11A for the cathode electrode and on the cathode electrode 11. The electron emitting portion 15 is composed of a plurality of electron emitters 15A. The electron emitter 15A includes a convex base layer 21 formed on a part of the stripe-shaped cathode electrode 11, and an electron emission layer 22 formed on the cathode electrode 11 and the base layer 21.

Hereinafter, the electron emitter according to the second embodiment,
A method of manufacturing a field emission device and a display device will be described with reference to FIG. 6 which is a schematic partial end view of a support and the like.

[Step-200] First, the cathode electrode conductive material layer 11A (conductive substrate) is formed. Specifically, a cathode electrode conductive material layer 11A made of tungsten (W) and having a thickness of 0.2 μm is formed on the support 10 by a sputtering method.

[Step-210] Thereafter, the stripe-shaped cathode electrode 11 is formed by patterning the cathode electrode conductive material layer 11A based on the lithography technique and the etching technique. The cathode electrode 1
1 extends in the direction perpendicular to the paper surface of FIG.

[Step-220] Next, the cathode electrode 1
A base layer 21 is formed on the substrate 1 (see FIG. 6A). Specifically, a 0.2 μm-thick base layer 21 made of chromium (Cr) or copper (Cu) is formed on the entire surface by a sputtering method.

[Step-230] After that, the base layer 21 is electrolyzed to leave the convex base layer 21 on a part of the cathode electrode 11 as the base (see FIG. 6B). Specifically, the entire support 10 is immersed in an aqueous ammonia solution. Then, the base layer 21 is electrolyzed using stainless steel as a cathode and the cathode electrode 11 as an anode. The electrolysis conditions can be the same as in Table 11. Thereby, the cathode electrode 11 and the support 10
When it is likened to the sea, it is possible to obtain a structure in which the base layer 21 is left in an island shape.

[Step-240] Then, the remaining base layer 2
It is preferable to selectively remove one unnecessary portion. That is, the base layer 21 on the support 10 and the base layer 2 on the region of the cathode electrode 11 other than the anode electrode / cathode electrode overlapping region are formed by the lithography technique and the etching technique.
Remove 1. The region where the base layer 21 on the cathode electrode 11 was left in the anode / cathode electrode overlapping region was circular with a diameter of 25 μm.

[Step-250] Next, the cathode electrode 11
An electron emission layer 22 is formed on the top and the base layer 21. Specifically, a conductive composition in which carbon nanotubes (single wall carbon nanotubes having an average diameter of 10 nm) are dispersed in a dispersion medium (made of water glass) is prepared. Then, after applying the conductive composition to the entire surface by spin coating, the conductive composition is dried to form the electron emission layer 22. After that, an unnecessary portion of the electron emission layer 22 (for example, the electron emission layer 22 on the support 10 and the electron emission layer 22 on the cathode electrode 11 other than the anode electrode / cathode electrode overlapping region) is removed by a lithography technique and an etching technique. It is selectively removed based on the lithography technique and the etching technique (wet etching method using NF ₄ · HF solution). Then 4 in the atmosphere
Bake at 00 ° C for 30 minutes. Thus, the field emission device shown in FIG. 6C can be obtained.

[Step-260] After that, the display device is assembled in the same manner as in [Step-140] of the first embodiment.

In [Step-200], after forming the cathode electrode conductive material layer 11A, a silicon carbide (SiC) layer, for example, is formed thereon by a sputtering method, and [Step-210]. In, the SiC layer and the cathode electrode conductive material layer 11A may be patterned. As a result, a resistor layer can be formed between the cathode electrode 11 and the base layer 21, and the emission of electrons from the electron emission portion can be made uniform.

The field emission device of the second embodiment can also be composed of a rectangular cathode electrode 11 as described in the modification of the first embodiment.

In some cases, the selective removal of the base layer 21 in [Step-240] may be omitted, or [Step-25].
0], it is not necessary to remove the unnecessary portion of the electron emission layer 22. In addition, [Step-210] to [Step-25
0] and the order of patterning the electron emission layer can be variously changed as shown in Tables 2 to 4.

(Embodiment 3) Embodiment 3 is a method for manufacturing an electron emitter according to the first aspect of the present invention, a method for manufacturing a field emission device according to the third aspect of the present invention, and The present invention relates to a method for manufacturing a display device according to a third aspect of the invention, and more specifically, to a 3A method. The field emission device obtained in the third embodiment is a so-called three-electrode type.

FIG. 7 shows a schematic partial end view of the display device according to the third embodiment, and FIG. 10 shows a schematic partial end view of one field emission device. The cathode panel CP and the anode panel AP are shown in FIG. FIG. 8 is a schematic partial perspective view of the disassembled item.

The electron emitter 15 in the third embodiment is also
It is composed of a convex electron emission layer 20 formed on a substrate (specifically, in the third embodiment, the cathode electrode 11 having a stripe shape). The convex electron emission layer 20 has a sea / island structure.

Alternatively, the field emission device according to the third embodiment has a striped cathode electrode 1 formed of the conductive material layer 11A for the cathode electrode provided on the support 10.
1 and an electron-emitting portion 15 composed of a plurality of electron-emitting bodies 15A formed on the cathode electrode 11, an electron-emitting portion 15 disposed above the electron-emitting portion 15, and an opening (for convenience, a first opening 14A and Called). The field emission device further includes an insulating layer 12 formed on the support 10 and the cathode electrode 11.
A gate electrode 13 is formed on the surface 2. In addition, the insulating layer 12 has a first opening 1 provided in the gate electrode 13.
A second opening 14B communicating with 4A is formed, and the electron emitting portion 15 is exposed at the bottom of the second opening 14B.
The electron emitter 15A is a striped cathode electrode 11
Is formed of a convex electron emission layer 20 formed on a part of the.

The display device is composed of a cathode panel CP having a large number of field emission elements as described above formed in the effective area and an anode panel AP, and is composed of a plurality of pixels, each pixel being a field emission element. And a phosphor layer 32 (a red light emitting phosphor layer 32R, a green light emitting phosphor layer 32G, a blue light emitting phosphor layer 32B) provided on the substrate 30 so as to face the field emission device. There is. The cathode panel CP and the anode panel AP are joined at their peripheral portions with the frame 34 interposed therebetween. In the partial end view shown in FIG. 7, in the cathode panel CP, one cathode electrode 11 has an opening 14A,
14B and the electron-emitting portion 15 are provided for simplification of the drawing.
However, the present invention is not limited to this, and the basic structure of the field emission device is as shown in FIG. Further, a through hole 36 for vacuum evacuation is provided in the ineffective region of the cathode panel CP, and a chip tube 37 which is closed off after vacuum evacuation is provided in the through hole 36.
Are connected. However, FIG. 7 shows a completed state of the display device, and the illustrated tip tube 37 is already sealed. Further, the illustration of the spacer is omitted.

The structure of the anode panel AP can be the same as the structure of the anode panel AP described in the first embodiment, and the detailed description thereof will be omitted. However, the anode electrode 33 has a structure in which one sheet of conductive material covers the effective area.

When a display is performed in this display device, a relative negative voltage is applied to the cathode electrode 11 from the cathode electrode control circuit 40, and a relative positive voltage is applied to the gate electrode 13 in the gate electrode control circuit 41. A positive voltage higher than that of the gate electrode 13 is applied to the anode electrode 33 from the anode electrode control circuit 42. When displaying is performed in such a display device, for example, a scanning signal is input to the cathode electrode 11 from the cathode electrode control circuit 40, and a video signal is input to the gate electrode 13 from the gate electrode control circuit 41. On the contrary, the cathode electrode 1
Alternatively, a video signal may be input from the cathode electrode control circuit 40 to 1, and a scanning signal may be input from the gate electrode control circuit 41 to the gate electrode 13. An electric field generated when a voltage is applied between the cathode electrode 11 and the gate electrode 13 causes electrons to be emitted from the electron emitting portion 15 based on the quantum tunnel effect, the electrons are attracted to the anode electrode 33, and the phosphor layer 32. Clash with. As a result, the phosphor layer 32 is excited and emits light, and a desired image can be obtained.

Hereinafter, the electron emitter according to the third embodiment,
A method for manufacturing a field emission device and a display device will be described with reference to FIGS. 9 and 10 which are schematic partial end views of a support and the like.

[Step-300] First, in the same manner as in [Step-100] of the first embodiment, the cathode electrode conductive material layer 11A (conductive substrate) is formed.

[Step-310] Then, the cathode electrode 11 forming the stripe-shaped cathode electrode 11 is formed by patterning the cathode electrode conductive material layer 11A based on the lithography technique and the etching technique.
It extends in the direction perpendicular to the paper surface of FIGS. 9 and 10.

[Step-320] Next, in the same manner as in [Step-120] of the first embodiment, electron emission is performed on the cathode electrode 11 which is a conductive substrate (more specifically, on the entire surface). Form layer 20.

[Step-330] Then, in the same manner as in [Step-130] of the first embodiment, the electron emission layer 20 is electrolyzed to form a convex shape on a part of the cathode electrode 11 as the base. The electron emission layer 20 is left (see FIG. 9A). Although the electron emission layer 20 is left on the support 10, a short circuit does not occur between the cathode electrodes 11.

[Step-340] Next, an insulating layer 12 made of, for example, SiO ₂ and having a thickness of 3 μm is formed on the entire surface by a plasma CVD method, and a gate electrode made of Cr is further formed thereon by a sputtering method. A conductive material layer is formed. Then, the gate electrode conductive material layer is patterned into a stripe shape based on the lithography technique and the etching technique, and further, the first opening 14A is formed in the stripe gate electrode conductive material layer based on the lithography technique and the etching technique. Thus, the gate electrode 13 can be obtained (see FIG. 9B). Incidentally, FIG. 9 (B)
In the figure, the illustration of the resist layer is omitted. Subsequently, the insulating layer 12 is etched to form the second opening 14B communicating with the first opening 14A.
After the formation of No. 2, the resist layer is removed. As a result, as shown in FIG. 10, a structure in which the electron emission layer 20 is exposed at the bottom of the second opening 14B can be obtained.

[Step-350] Then, as in [Step-140] of the first embodiment, the display device is assembled.

After [Step-330], the remaining electron emission layer 20 is formed by the lithography technique and the etching technique.
Unnecessary portions (for example, the electron emission layer 20 on the support 10,
Alternatively, the electron emission layer 20 on the cathode electrode 11 other than the gate electrode / cathode electrode overlap region, or the electron emission layer 20 on the support 10 and the electrons on the cathode electrode 11 other than the gate electrode / cathode electrode overlap region. Emission layer 2
0) may be selectively removed.

[Step-320] in the third embodiment
The order of [Step-340] and the patterning of the electron emission layer can be variously changed as shown in Table 5.

(Embodiment 4) Embodiment 4 is a modification of Embodiment 3. In the fourth embodiment, the electron emission layer is electrolyzed after the formation of the electron emission layer, the formation of the insulating layer, the formation of the gate electrode, and the formation of the second opening. More specifically, it relates to the third H method. 1 is a schematic partial end view of a support and the like showing a method for manufacturing an electron emitter, a field emission device and a display device according to Embodiment 4.
1 and FIG. 12 will be described.

[Step-400] First, in the same manner as in [Step-100] of the first embodiment, the cathode electrode conductive material layer 11A (conductive substrate) is formed.

[Step-410] After that, the cathode electrode 11 forming the stripe-shaped cathode electrode 11 is formed by patterning the cathode electrode conductive material layer 11A based on the lithography technique and the etching technique.
It extends in the direction perpendicular to the paper surface of FIGS. 11 and 12.

[Step-420] Next, in the same manner as in [Step-120] of the first embodiment, electron emission is performed on the cathode electrode 11 which is a conductive substrate (more specifically, on the entire surface). Form layer 20.

[Step-430] Thereafter, the remaining electron emission layer 2 is formed by the lithography technique and the etching technique.
0 unnecessary portion (for example, the electron emission layer 2 on the support 10)
0, or alternatively, the electron emission layer 20 on the cathode electrode 11 other than the gate electrode / cathode electrode overlap region, or the electron emission layer 20 on the support 10 and the cathode electrode 11 other than the gate electrode / cathode electrode overlap region. Of the electron emission layer 20) are selectively removed (see FIG. 11A). Note that this step is unnecessary in some cases, and in this case, the third G method is used.

[Step-440] Next, as shown in FIG.
Similar to [Step-340], for example, SiO 2 is formed on the entire surface. ₂
Of 3 μm thick insulating layer 12 composed of
And then Cr on it by sputtering.
Forming a conductive material layer for a gate electrode. afterwards,
Based on lithography technology and etching technology
The conductive material layer for poles is patterned in stripes and
Based on lithography technology and etching technology.
The first opening 14 is formed in the conductive material layer for the gate electrode in the shape of a lip.
By forming A, the gate electrode 13 can be obtained.
(See FIG. 11B). In addition, in (B) of FIG.
However, the illustration of the resist layer is omitted. Continued
By etching the edge layer 12, the first opening
The second opening 14B communicating with 14A is formed in the insulating layer 12.
After the formation, the resist layer is removed. As a result, FIG.
As shown in FIG. 2 (A), at the bottom of the second opening 14B.
A structure in which the electron emission layer 20 is exposed can be obtained.

[Step-450] Then, in the same manner as in [Step-130] of the first embodiment, the electron emission layer 20 exposed at the bottom of the second opening 14B is electrolyzed to obtain the second step. The convex electron emission layer 20 is left on the part of the cathode electrode 11 exposed at the bottom of the opening 14B (see FIG. 12B).

[Step-460] Then, as in [Step-140] of the first embodiment, the display device is assembled.

(Fifth Embodiment) The fifth embodiment is also a modification of the third embodiment. In the fifth embodiment, the formation of the insulating layer, the formation of the gate electrode, and the formation of the second opening are followed by formation of the electron emission layer and electrolysis. More specifically, it relates to the third method. Hereinafter, a method of manufacturing the electron emitter, the field emission device and the display device according to the fifth embodiment will be described with reference to FIGS. 13 and 14 which are schematic partial end views of the support and the like.

[Step-500] First, similarly to [Step-100] of the first embodiment, the cathode electrode conductive material layer 11A (conductive substrate) is formed.

[Step-510] After that, the cathode electrode 11 forming the stripe-shaped cathode electrode 11 is formed by patterning the cathode electrode conductive material layer 11A based on the lithography technique and the etching technique.
It extends in the direction perpendicular to the paper surface of FIGS. 13 and 14.

[Step-520] Next, as in [Step-340] of the third embodiment, for example, SiO ₂ is formed on the entire surface.
An insulating layer 12 having a thickness of 3 μm is formed by a plasma CVD method, and further, a Cr layer is formed on the insulating layer 12 by a sputtering method.
Forming a conductive material layer for a gate electrode. afterwards,
The conductive material layer for a gate electrode is patterned into a stripe shape based on the lithography technology and the etching technology, and further, the first opening portion 14 is formed in the stripe-shaped conductive material layer for the gate electrode based on the lithography technology and the etching technology.
By forming A, the gate electrode 13 can be obtained. Then, by etching the insulating layer 12, the second opening 14B communicating with the first opening 14A is formed.
Are formed on the insulating layer 12. As a result, as shown in FIG. 13A, it is possible to obtain a structure in which the cathode electrode 11 is exposed at the bottom of the second opening 14B.

[Step-530] After that, the second opening 1
An electron emitter is formed on the surface of the portion of the cathode electrode 11 located at the bottom of 4B. Therefore, first, the mask layer 116 in which the surface of the cathode electrode 11 is exposed is formed in the center of the bottom of the second opening 14B (see FIG. 13B). Specifically, after a resist material layer is formed on the entire surface including the inside of the openings 14A and 14B by a spin coating method, the resist material located at the center of the bottom of the second opening 14B is formed based on the lithography technique. The mask layer 116 can be obtained by forming holes in the layer. In the fifth embodiment, the mask layer 116 has the second opening 14
It covers a part of the cathode electrode 11 located at the bottom of B, the side wall of the second opening 14B, the side wall of the first opening 14A, the gate electrode 13 and the insulating layer 12. As a result, in the subsequent steps, an electron emission layer is formed on the surface of the portion of the cathode electrode 11 located at the center of the bottom of the second opening 14B, but the cathode electrode 11 and the gate electrode 13 emit electrons. It is possible to reliably prevent a short circuit due to the formation of the layer.

[Step-540] Next, the second opening 1
An electron emission layer 20 is formed on the cathode electrode 11 exposed at the bottom of 4B. Specifically, the first embodiment is formed on the entire surface.
After the electron emission layer 20 is formed in the same manner as in [Step-120], the mask layer 11 is formed by using an ammonium fluoride solution.
6 is removed (see FIG. 14A).

[Step-550] Then, in the same manner as in [Step-130] of the first embodiment, the electron emission layer 20 exposed at the bottom of the second opening 14B is electrolyzed, whereby the second The convex electron emission layer 20 is left on the part of the cathode electrode 11 exposed at the bottom of the opening 14B (see FIG. 14B).

[Step-560] Then, as in [Step-140] of the first embodiment, the display device is assembled.

[Step-300], [Step-400]
Alternatively, in [Step-500], after forming the cathode electrode conductive material layer 11A, a silicon carbide (SiC) layer, for example, is formed thereon by a sputtering method, and [Step-310] and [Step- 410] or [Step-510], the SiC layer and the cathode electrode conductive material layer 11A may be patterned. As a result, the resistor layer can be formed between the cathode electrode and the electron emission layer, and the emission of electrons from the electron emission portion can be made uniform.

(Embodiment 6) Embodiment 6 is a method for manufacturing an electron emitter according to the second aspect of the present invention, a method for manufacturing a field emission device according to the fourth aspect of the present invention, and The present invention relates to a method of manufacturing a display device according to a fourth aspect of the invention, and more specifically, to a fourth D method. The field emission device obtained in the sixth embodiment is a so-called three-electrode type.

FIG. 17 shows a schematic partial end view of one field emission device in the display device according to the sixth embodiment. The structures of the cathode panel CP and the anode panel AP in the display device according to the sixth embodiment are substantially as shown in the schematic partial end view of FIG. 7, as shown in the schematic partial end view of FIG. Since the structures of the cathode panel CP and the anode panel AP in the display device of the third embodiment can be substantially the same, detailed description will be omitted.

The electron emitter 15 in the sixth embodiment is
Substrate (specifically, in Embodiment 6, stripe-shaped cathode electrode 11), convex base layer 21 formed on a part of the base, and electron formed on the base and base layer 21. It consists of the emission layer 22.

Alternatively, the field emission device according to the sixth embodiment is formed on the cathode electrode 11 and the stripe-shaped cathode electrode 11 formed of the conductive material layer 11A for the cathode electrode, which is provided on the support 10. It is composed of an electron emitting portion 15 composed of a plurality of electron emitters 15A. The electron emitter 15A includes a convex base layer 21 formed on a part of the stripe-shaped cathode electrode 11, and
The electron emission layer 22 is formed on the cathode electrode 11 and the base layer 21.

Hereinafter, the electron emitter according to the sixth embodiment,
A method of manufacturing a field emission device and a display device will be described with reference to FIGS. 16 and 17 which are schematic partial end views of a support and the like.

[Step-600] First, in the same manner as in [Step-200] of the second embodiment, the cathode electrode conductive material layer 11A (conductive substrate) is formed.

[Step-610] After that, the stripe-shaped cathode electrodes 11 are formed by patterning the cathode electrode conductive material layer 11A based on the lithography technique and the etching technique. The cathode electrode 1
1 extends in the direction perpendicular to the paper surface of FIGS. 16 and 17.

[Step-620] Next, the base layer 21 is formed on the cathode electrode 11 in the same manner as in [Step-220] of the second embodiment.

[Step-630] Then, in the same manner as in [Step-230] of the second embodiment, the base layer 21 is electrolyzed to form a convex base layer 21 on a part of the cathode electrode 11 as the base. Leave. Then, in the same manner as in [Step-240] of the second embodiment, the remaining unnecessary portion of the base layer 21 (for example, the base layer 21 on the support 10 and the cathode electrode 11 other than the gate electrode / cathode electrode overlapping region).
It is preferable to selectively remove the base layer 21) on the area of 1), but in some cases this removal is not necessary.

[Step-640] Next, in the same manner as in [Step-250] of the second embodiment, on the cathode electrode 11,
Also, the electron emission layer 22 is formed on the base layer 21 (FIG. 16).
(A)).

[Step-650] Then, in the third embodiment
Similar to [Step-340], for example, SiO 2 is formed on the entire surface. ₂
Of 3 μm thick insulating layer 12 composed of
And then Cr on it by sputtering.
Forming a conductive material layer for a gate electrode. afterwards,
Based on lithography technology and etching technology
The conductive material layer for poles is patterned in stripes and
Based on lithography technology and etching technology.
The first opening 14 is formed in the conductive material layer for the gate electrode in the shape of a lip.
By forming A, the gate electrode 13 can be obtained.
(See FIG. 16B). In addition, in (B) of FIG.
However, the illustration of the resist layer is omitted. Continued
By etching the edge layer 12, the first opening
The second opening 14B communicating with 14A is formed in the insulating layer 12.
After the formation, the resist layer is removed. As a result, FIG.
As shown in FIG. 7, electrons are emitted to the bottom of the second opening 14B.
A structure in which the body 15A is exposed can be obtained. The first
The diameter of the opening 14A was 22 μm.

[Step-660] Then, as in [Step-140] of the first embodiment, the display device is assembled.

In the step [640], after the conductive composition was dried, the conductive composition was dried at 400 ° C. in the atmosphere without removing unnecessary portions of the electron emission layer 22.
You may bake in 30 minutes and may form an electron emission layer.

Further, in [Step-600], after forming the cathode electrode conductive material layer 11A, a silicon carbide (SiC) layer, for example, is formed thereon by a sputtering method, and [Step-610]. In, the SiC layer and the cathode electrode conductive material layer 11A may be patterned. As a result, the resistor layer can be formed between the cathode electrode and the electron emission layer, and the emission of electrons from the electron emission portion can be made uniform.

The order of [Step-610] to [Step-650], patterning of the base layer, and patterning of the electron-emitting layer can be variously changed as shown in Tables 7 to 8.

(Embodiment 7) Embodiment 7 is a modification of Embodiment 6. In the seventh embodiment, the electron emission layer is formed after the base layer is formed, the base layer is electrolyzed, the insulating layer is formed, the gate electrode is formed, and the second opening is formed. More specifically, it relates to the fourth P method. Hereinafter, a method of manufacturing the electron emitter, the field emission device and the display device according to the seventh embodiment will be described with reference to FIGS. 18 and 19 which are schematic partial end views of the support and the like.

[Step-700] First, in the same manner as in [Step-200] of the second embodiment, the cathode electrode conductive material layer 11A (conductive substrate) is formed.

[Step-710] After that, the stripe-shaped cathode electrode 11 is formed by patterning the cathode electrode conductive material layer 11A based on the lithography technique and the etching technique. The cathode electrode 1
1 extends in the direction perpendicular to the paper surface of FIGS. 18 and 19.

[Step-720] Then, the base layer 21 is formed on the cathode electrode 11 in the same manner as in [Step-220] of the second embodiment.

[Step-730] Then, in the same manner as in [Step-230] of the second embodiment, the base layer 21 is electrolyzed to form a convex base layer 21 on a part of the cathode electrode 11 as the base. Leave. Then, in the same manner as in [Step-240] of the second embodiment, the remaining unnecessary portion of the base layer 21 (for example, the base layer 21 on the support 10 and the cathode electrode 11 other than the gate electrode / cathode electrode overlapping region).
It is preferable to selectively remove the base layer 21) on the area of 1), but in some cases this removal is not necessary. Thus, the structure shown in FIG. 18A can be obtained.

[Step-740] Next, as in [Step-340] of the third embodiment, the entire surface is covered with, for example, SiO _2.
An insulating layer 12 having a thickness of 3 μm is formed by a plasma CVD method, and further, a Cr layer is formed on the insulating layer 12 by a sputtering method.
Forming a conductive material layer for a gate electrode. afterwards,
The conductive material layer for a gate electrode is patterned into a stripe shape based on the lithography technology and the etching technology, and further, the first opening portion 14 is formed in the stripe-shaped conductive material layer for the gate electrode based on the lithography technology and the etching technology.
By forming A, the gate electrode 13 can be obtained (see FIG. 18B). Note that the resist layer is not shown in FIG. Subsequently, the insulating layer 12 is etched to form a second opening 14B communicating with the first opening 14A in the insulating layer 12, and then the resist layer is removed. By this, the second
At the bottom of the opening 14B of the base layer 21 and the cathode electrode 11
An exposed structure can be obtained.

[Step-750] Then, the second opening 1
An electron emission layer 22 is formed on the base layer 21 and the cathode electrode 11 located at the bottom of 4B. For that purpose, first, the mask layer 116 in which the surface of the cathode electrode 11 is exposed is formed in the center of the bottom of the second opening 14B (see FIG. 19A). Specifically, a resist material layer is formed on the entire surface including the inside of the openings 14A and 14B by a spin coating method, and then the second opening 14B is formed based on the lithography technique.
The mask layer 116 can be obtained by forming a hole in the resist material layer located at the center of the bottom of the mask. In the seventh embodiment, the mask layer 116 includes the portion of the cathode electrode 11 located at the bottom of the second opening 14B, the sidewall of the second opening 14B, the sidewall of the first opening 14A, the gate electrode 13, and the gate electrode 13. The insulating layer 12 is covered.
As a result, in the subsequent steps, an electron emission layer is formed on the surface of the portion of the cathode electrode 11 located at the center of the bottom of the second opening 14B, but the cathode electrode 11 and the gate electrode 13 emit electrons. It is possible to reliably prevent a short circuit due to the formation of the layer.

[Step-760] Next, the second opening 1
An electron emission layer 20 is formed on the cathode electrode 11 and the base layer 21 exposed at the bottom of 4B. Specifically, a conductive composition in which carbon nanotubes (single-wall carbon nanotubes having an average diameter of 10 nm) are dispersed in a dispersion medium (made of water glass) is prepared. Then, after applying the conductive composition to the entire surface by spin coating, the conductive composition is dried to form the electron emission layer 2
2 is formed, and then the mask layer 116 is removed using a sodium hydroxide solution.
Bake for 0 minutes. Thus, the field emission device shown in FIG. 19B can be obtained.

[Step-760] Then, as in [Step-140] of the first embodiment, the display device is assembled.

In [Step-700], after forming the cathode electrode conductive material layer 11A, a silicon carbide (SiC) layer, for example, is formed thereon by a sputtering method, and [Step-710]. In, the SiC layer and the cathode electrode conductive material layer 11A may be patterned. As a result, the resistor layer can be formed between the cathode electrode and the electron emission layer, and the emission of electrons from the electron emission portion can be made uniform.

(Embodiment 8) Embodiment 8 is also a modification of Embodiment 6. In Embodiment Mode 8, after the base layer is formed, the insulating layer is formed, the gate electrode is formed, and the second opening is formed, the base layer is electrolyzed and the electron emission layer is formed. More specifically, it relates to the fourth Q method. Hereinafter, a method of manufacturing the electron emitter, the field emission device and the display device according to the eighth embodiment will be described with reference to FIGS. 20 to 22 which are schematic partial end views of the support and the like.

[Step-800] First, in the same manner as in [Step-200] of Embodiment 2, the cathode electrode conductive material layer 11A (conductive substrate) is formed.

[Step-810] After that, the cathode-shaped conductive electrode layer 11A is patterned by the lithography technique and the etching technique to form the stripe-shaped cathode electrode 11. The cathode electrode 1
1 extends in the direction perpendicular to the paper surface of FIGS. 20 to 22.

[Step-820] Next, in the same manner as in [Step-220] of the second embodiment, after forming the base layer 21 on the cathode electrode 11, the base layer 21 is patterned ((A) in FIG. 20). reference).

[Step-830] Next, as in [Step-340] of the third embodiment, for example, SiO ₂ is formed on the entire surface.
An insulating layer 12 having a thickness of 3 μm is formed by a plasma CVD method, and further, a Cr layer is formed on the insulating layer 12 by a sputtering method.
Forming a conductive material layer for a gate electrode. afterwards,
The conductive material layer for a gate electrode is patterned into a stripe shape based on the lithography technology and the etching technology, and further, the first opening portion 14 is formed in the stripe-shaped conductive material layer for the gate electrode based on the lithography technology and the etching technology.
By forming A, the gate electrode 13 can be obtained (see FIG. 20B). Note that the resist layer is not shown in FIG. Subsequently, the insulating layer 12 is etched to form a second opening 14B communicating with the first opening 14A in the insulating layer 12, and then the resist layer is removed. As a result, FIG.
As shown in FIG. 1A, a structure in which the base layer 21 is exposed at the bottom of the second opening 14B can be obtained.

[Step-840] Then, in the same manner as in [Step-230] of the second embodiment, the base layer 21 is electrolyzed to form a convex base layer 21 on a part of the cathode electrode 11 as the base. Are left (see FIG. 21B).

[Step-850] Then, the second opening 1
An electron emission layer 22 is formed on the base layer 21 and the cathode electrode 11 located at the bottom of 4B. Therefore, first, the mask layer 116 in which the surface of the cathode electrode 11 is exposed is formed in the central portion of the bottom of the second opening 14B (see FIG. 22A). Specifically, a resist material layer is formed on the entire surface including the inside of the openings 14A and 14B by a spin coating method, and then the second opening 14B is formed based on the lithography technique.
The mask layer 116 can be obtained by forming a hole in the resist material layer located at the center of the bottom of the mask. In the eighth embodiment, the mask layer 116 includes a portion of the cathode electrode 11 located at the bottom of the second opening 14B, a side wall of the second opening 14B, a side wall of the first opening 14A, the gate electrode 13, and the gate electrode 13. The insulating layer 12 is covered.
As a result, in the subsequent steps, an electron emission layer is formed on the surface of the portion of the cathode electrode 11 located at the center of the bottom of the second opening 14B, but the cathode electrode 11 and the gate electrode 13 emit electrons. It is possible to reliably prevent a short circuit due to the formation of the layer.

[Step-860] Next, the second opening 1
An electron emission layer 20 is formed on the cathode electrode 11 exposed at the bottom of 4B. Specifically, specifically, carbon nanotubes (single wall with an average diameter of 10 nm
Carbon nanotubes) dispersion medium (consisting of water glass)
A conductive composition dispersed in is prepared. Then, after applying the conductive composition to the entire surface by spin coating, the conductive composition is dried to form the electron emission layer 22,
The mask layer 116 is then formed using a sodium hydroxide solution.
After removing the above, baking is performed at 400 ° C. for 30 minutes in the atmosphere. Thus, the field emission device shown in FIG. 22B can be obtained.

[Step-870] Then, as in [Step-140] of the first embodiment, the display device is assembled.

[0237] In [Step-800], after forming the cathode electrode conductive material layer 11A, a silicon carbide (SiC) layer, for example, is formed thereon by a sputtering method, and [Step-810]. In, the SiC layer and the cathode electrode conductive material layer 11A may be patterned. As a result, the resistor layer can be formed between the cathode electrode and the electron emission layer, and the emission of electrons from the electron emission portion can be made uniform.

[Step-710] to [Step-75]
0] and the order of patterning the base layer, or alternatively
The order of [Step-810] to [Step-860] is shown in Table 9-.
As shown in Table 10, various changes can be made.

(Ninth Embodiment) The ninth embodiment is also a modification of the sixth embodiment. The field emission device according to the ninth embodiment has the second structure. That is, in the field emission device according to the ninth embodiment, the strip-shaped gate electrode support portion 112 made of an insulating material is disposed on the support body 10, the cathode electrode 11 formed on the support body 10, and the plurality of openings 114. The gate electrode 113 made of the strip-shaped material 113A and the electron emitting portion 15 formed on the cathode electrode 11 are in contact with the top surface of the gate electrode supporting portion 112, and the electron emitting portion 15 The strip-shaped material 113A is stretched so that the opening 114 is located above. The electron emitting portion 15 includes a plurality of electron emitting members 15 formed on the surface of the portion of the cathode electrode 11 located at the bottom of the opening 114.
Composed of A. The electron emitter 15A has a convex base layer 21 formed on a part of the striped cathode electrode 11.
And an electron emission layer 22 formed on the base and base layer 21.
Consists of.

The strip-shaped material 113A is used for the gate electrode support 1
It is fixed to the top surface of 12 with a thermosetting adhesive (for example, an epoxy adhesive). A schematic partial cross-sectional view of the field emission device of the ninth embodiment is shown in FIG. 23 (A), in which the cathode electrode 11, the strip-shaped material 113A and the gate electrode 113,
In addition, a schematic layout of the gate electrode support portion 112 is shown in FIG.

An example of the method of manufacturing the field emission device according to the ninth embodiment (fifth manufacturing method) will be described below.

[Step-900] First, the gate electrode support portion 112 is formed on the support 10 by, for example, a sandblast method.

[Step-910] After that, the electron emitting portion 15 is formed on the support 10. Specifically, for example, the electron emitting portion 15 including the cathode electrode 11 and the electron emitting member 15A is formed in the same manner as in [Step-600] to [Step-640] of the sixth embodiment. The cathode electrode 11 has a stripe shape, and is formed on a portion of the support body 10 located between the gate electrode support portion 112 and the gate electrode support portion 112. The electron emitter 15A may be formed only on the surface region of the cathode electrode 11 located in the gate electrode / cathode electrode overlapping region, or may be formed on the entire surface of the cathode electrode 11.

[Step-920] Then, the plurality of openings 1
Stripe-shaped material 113A in which 14 is formed,
The plurality of openings 114 are arranged in a state of being supported by the gate electrode supporting portion 112 so that the plurality of openings 114 are located above the electron emitting portion 15, and thus the plurality of openings 114 are composed of the strip-shaped strip-shaped material 113A. Gate electrode 1 having 114
13 is positioned above the electron emitting portion 15. The strip-shaped strip-shaped material 113A can be fixed to the top surface of the gate electrode support portion 112 with a thermosetting adhesive (for example, an epoxy adhesive). The projection image of the striped cathode electrode 11 and the projection image of the striped strip material 113A are orthogonal to each other.

Note that, as shown in FIG. 24, which is a schematic partial cross-sectional view in the vicinity of the end of the support 10, both ends of the strip-shaped strip material 113A are fixed to the periphery of the support 10. It can also have a structure. More specifically, for example, a protrusion 117 is formed in advance on the peripheral portion of the support 10, and a thin film 118 of the same material as the material forming the strip-shaped material 113A is formed on the top surface of the protrusion 117. deep. Then, in a state where the striped strip material 113A is stretched, the thin film 118 is welded by using, for example, a laser. The protrusion 117 can be formed at the same time as the formation of the gate electrode support portion, for example.

The planar shape of the opening 114 in the field emission device of the ninth embodiment is not limited to the circular shape. Modification examples of the shape of the opening 114 provided in the strip material 113A are illustrated in FIGS. 25A, 25B, 25C, and 25D.

Also, in the ninth embodiment, the support 1
After forming the cathode electrode 11 and the electron emitter 15A on the substrate 0, the gate electrode support 112 may be formed on the support 10 by, for example, a sandblast method. Further, the gate electrode support portion 112 may be formed based on, for example, a combination of the CVD method and the etching method.

The structure of the gate electrode described in the ninth embodiment can also be applied to the field emission device described in the third to fifth embodiments.

Although the present invention has been described based on the embodiments of the present invention, the present invention is not limited to these. The structure of the field emission device described in the embodiments of the invention, the structure of the cold cathode field emission display, the materials used in the embodiments of the invention, the processing conditions, etc. are examples.
It can be changed as appropriate. In the embodiment of the invention, the electron emitting layer is formed by coating the entire surface of the base layer or the like by the spin coating method of the conductive composition, but the method of forming the electron emitting layer is limited to such a method. Not a thing, for example, a screen printing method or various C
It is possible to use the VD method and other suitable forming methods for the material forming the electron emission layer.

In the field emission device, one electron emission portion corresponds to one opening portion, but depending on the structure of the field emission device, a plurality of electron emission portions may be formed in one opening portion. Corresponding form, or 1 for multiple openings
It is also possible that the two electron emitting portions correspond to each other. Alternatively, a plurality of first openings are provided in the gate electrode, and one second opening communicating with the plurality of first openings in the insulating layer is provided.
It is also possible to adopt a mode in which the opening portion is provided and one or a plurality of electron emitting portions are provided.

A second insulating layer 62 may be further provided on the gate electrode 13 and the insulating layer 12, and a converging electrode 63 may be provided on the second insulating layer 62. FIG. 26 shows a schematic partial end view of an example of the field emission device having such a structure (the field emission device described in the sixth embodiment). The second insulating layer 62 is provided with a third opening 64 that communicates with the first opening 14A. The formation of the converging electrode 63 is, for example, in the sixth embodiment, in [Step-650], after forming the stripe-shaped gate electrode 13 on the insulating layer 12, the second insulating layer 62 is formed. Then, after forming the patterned converging electrode 63 on the second insulating layer 62, a third opening 64 is provided in the converging electrode 63 and the second insulating layer 62, and further, the first opening is formed on the gate electrode 13. Opening 1
4A may be provided. Incidentally, depending on the patterning of the focusing electrode, a focusing electrode of a type in which one or a plurality of electron emitting portions or a focusing electrode unit corresponding to one or a plurality of pixels are assembled may be used, or an effective area may be used. 1
It is also possible to use a focusing electrode in the form of being covered with a sheet-shaped conductive material.

The focusing electrode is not only formed by such a method, but also, for example, 42% Ni- having a thickness of several tens of μm.
It is also possible to form the focusing electrode by forming an insulating film made of, for example, SiO _{2 on} both surfaces of a metal plate made of Fe alloy, and then punching or etching the region corresponding to each pixel to form an opening. . Then, by stacking the cathode panel, the metal plate, and the anode panel, disposing the frame bodies on the outer peripheral portions of both panels, and applying heat treatment, the insulating film and the insulating layer 12 formed on one surface of the metal plate are separated. It is also possible to complete the display device by adhering the insulating film formed on the other surface of the metal plate to the anode panel, adhering these members together, and then vacuum-sealing.

The structure of the field emission device having such a converging electrode can be applied to the field emission devices described in the third to fifth embodiments.

The gate electrode may be a gate electrode of a type in which the effective region is covered with one sheet of conductive material (having an opening). In this case, the cathode electrode has the same structure as that described in the first embodiment having a rectangular shape. Then, a positive voltage (for example, 160 V) is applied to the gate electrode. Further, a switching element including, for example, a TFT is provided between the cathode electrode forming each pixel and the cathode electrode control circuit, and the operation state of the switching element controls the application state to the cathode electrode forming each pixel. Then, the light emitting state of the pixel is controlled.

Alternatively, the cathode electrode may be a cathode electrode of a type in which the effective area is covered with one sheet of conductive material. In this case, an electron emission region which is composed of a field emission element and constitutes each pixel is formed in a predetermined portion of one sheet of conductive material. And
A voltage (for example, 0 volt) is applied to the cathode electrode. Further, a switching element composed of, for example, a TFT is provided between the rectangular-shaped gate electrode forming each pixel and the gate electrode control circuit, and the operation of the switching element causes an electron emission portion to be formed in each pixel. The state in which an electric field is applied is controlled, and the light emitting state of the pixel is controlled.

[0256]

According to the present invention, by electrolysis,
Since a convex electron emission layer or a base layer is left on a part of the substrate, or on a part of the conductive material layer for the cathode electrode or the cathode electrode, even if the area is large,
It becomes possible to form the electron emitter or the electron emitting portion having a fine uneven portion uniformly and with good controllability.
Moreover, the height (thickness) of the convex electron-emitting layer or base layer
Is defined by the thickness of these film-forming layers, so that it is possible to form a convex electron-emitting layer or base layer uniformly and with good controllability. Therefore, for example, the uniformity of the distance from the electron emission layer to the end of the gate electrode can be reliably ensured with high accuracy, and the luminance of the cold cathode field emission display can be made uniform.

[Brief description of drawings]

FIG. 1 is a schematic partial cross-sectional view of a cold cathode field emission display according to a first embodiment of the invention.

FIG. 2 is a schematic partial cross-sectional view of a support and the like for explaining the method of manufacturing the cold cathode field emission device according to the first embodiment of the invention.

FIG. 3 is a schematic partial cross-sectional view of a substrate and the like for explaining the method of manufacturing the anode panel in the cold cathode field emission display according to the first embodiment of the invention.

FIG. 4 is a schematic perspective view of one electron emitting portion in a modification of the cold cathode field emission display according to the first embodiment of the invention.

FIG. 5 is a schematic partial cross-sectional view of a cold cathode field emission display according to a second embodiment of the invention.

FIG. 6 is a schematic partial cross-sectional view of a support and the like for explaining the method of manufacturing the cold cathode field emission device according to the second embodiment of the invention.

FIG. 7 is a schematic partial end view of a cold cathode field emission display according to a third embodiment of the invention.

FIG. 8 is a schematic partial perspective view of a cathode panel and an anode panel in a cold cathode field emission display according to a third embodiment of the invention when the cathode panel and the anode panel are disassembled.

FIG. 9 is a schematic partial end view of a support and the like for explaining a method of manufacturing a cold cathode field emission device according to a third embodiment of the invention.

FIG. 10 is a schematic partial end view of a support body and the like for explaining the method for manufacturing the cold cathode field emission device according to the third embodiment of the invention, following FIG. 9;

FIG. 11 is a schematic partial end view of a support and the like for explaining the method for manufacturing the cold cathode field emission device according to the fourth embodiment of the invention.

FIG. 12 is a schematic partial end view of the support and the like for explaining the method for manufacturing the cold cathode field emission device according to the fourth embodiment of the invention, following FIG. 11;

FIG. 13 is a schematic partial end view of a support and the like for explaining the method of manufacturing the cold cathode field emission device according to the fifth embodiment of the invention.

FIG. 14 is a schematic partial end view of the support and the like for explaining the method for manufacturing the cold cathode field emission device according to the fifth embodiment of the invention, following FIG.

FIG. 15 is a schematic partial end view of a cold cathode field emission display according to a sixth embodiment of the invention.

FIG. 16 is a schematic partial end view of a support and the like for explaining the method for manufacturing the cold cathode field emission device according to the sixth embodiment of the invention.

17 is a schematic partial end view of a support body and the like for explaining the method for manufacturing the cold cathode field emission device according to the sixth embodiment of the invention, following FIG. 16;

FIG. 18 is a schematic partial end view of a support and the like for explaining the method for manufacturing the cold cathode field emission device according to the seventh embodiment of the invention.

19 is a schematic partial end view of a support and the like for explaining the method for manufacturing the cold cathode field emission device according to the seventh embodiment of the invention, following FIG. 18. FIG.

FIG. 20 is a schematic partial end view of a support and the like for explaining the method for manufacturing the cold cathode field emission device according to the eighth embodiment of the invention.

FIG. 21 is a schematic partial end view of the support and the like for explaining the method for manufacturing the cold cathode field emission device according to the eighth embodiment of the invention, following FIG. 20.

22 is a schematic partial end view of a support and the like for explaining the method for manufacturing the cold cathode field emission device according to the eighth embodiment of the invention, following FIG. 21. FIG.

FIG. 23 is a schematic partial cross-sectional view of a cold cathode field emission device according to a ninth embodiment of the invention, and a schematic layout diagram of a gate electrode and the like.

FIG. 24 is a schematic partial cross-sectional view of a cold cathode field emission device according to a modification of the ninth embodiment of the invention.

FIG. 25 is a schematic plan view showing a plurality of openings of a gate electrode according to a ninth embodiment of the invention.

FIG. 26 is a schematic partial end view showing a modification of the cold cathode field emission device of Embodiment 6 of the present invention, which is a cold cathode field emission device provided with a focusing electrode.

FIG. 27 is a schematic diagram showing a configuration example of a conventional cold cathode field emission display including a Spindt-type cold cathode field emission device.

FIG. 28 is a schematic partial end view of a support and the like for explaining a conventional method of manufacturing a Spindt-type cold cathode field emission device.

FIG. 29 is a schematic partial end view of a support and the like for explaining the method of manufacturing the conventional Spindt-type cold cathode field emission device, following FIG. 28;

[Explanation of symbols]

CP ... Cathode panel, AP ... Anode panel, 10 ... Support, 11 ... Cathode electrode, 12
... Insulating layer, 13 ... Gate electrode, 14A ... Opening portion, 14B ... Second opening portion, 15 ... Electron emitting portion, 15A ... Electron emitting body, 20, 22 ... ..Electron emission layer, 21 ... Base layer, 30 ... Substrate, 31 ...
..Black matrix, 32, 32R, 32G, 3
2B ... Phosphor layer, 33 ... Anode electrode, 34 ...
..Frames, 40 ... Cathode electrode control circuit, 41 ...
.Gate electrode control circuit 42 ... Anode electrode control circuit

   ─────────────────────────────────────────────────── ─── Continued front page    (72) Inventor Shinichi Tachizono             Hitachi Powder, 1 Mito, Tako-cho, Katori-gun, Chiba Prefecture             Within Metallurgical Co., Ltd.

Claims (10)

[Claims] 1. A step of (A) forming an electron emitting layer on a conductive substrate, and (B) electrolyzing the electron emitting layer to form a convex electron emitting layer on a part of the substrate. A method of manufacturing an electron emitter, comprising the step of leaving. 2. A step of forming a base layer on a conductive substrate, and a step of leaving a convex base layer on a part of the substrate by electrolyzing the base layer. ) A step of forming an electron emission layer on the substrate and the base layer, the method for producing an electron emitter. 3. An electron emitting portion composed of (a) a cathode electrode formed of a conductive material layer for a cathode electrode provided on a support, and (b) a plurality of electron emitters formed on the cathode electrode. A method of manufacturing a cold cathode field emission device comprising: (A) a step of forming an electron emission layer on a conductive material layer for a cathode electrode or on a cathode electrode; A method of manufacturing a cold cathode field emission device, which comprises forming a convex electron emission layer on a conductive material layer for a cathode electrode or a part of the cathode electrode by electrolyzing the emission layer. . 4. An electron emitting portion composed of (a) a cathode electrode made of a conductive material layer for a cathode electrode provided on a support, and (b) a plurality of electron emitters formed on the cathode electrode. A method of manufacturing a cold cathode field emission device, comprising: (A) forming a base layer on a conductive material layer for a cathode electrode or on a cathode electrode; and (B) electrically forming the base layer. A step of leaving a convex base layer on the conductive material layer for the cathode electrode or a part of the cathode electrode by decomposition, and (C) an electron emitting layer on the conductive material layer for the cathode electrode or the cathode electrode and on the base layer. And a step of forming a cold cathode field emission device. 5. An electron emitting portion composed of (a) a cathode electrode made of a conductive material layer for a cathode electrode provided on a support, and (b) a plurality of electron emitting bodies formed on the cathode electrode. And (c) a gate electrode having an opening, which is disposed above the electron-emitting portion, and a method for manufacturing a cold cathode field emission device, wherein: (A) a conductive material for a cathode electrode; A step of forming an electron emission layer on the layer or the cathode electrode, and (B) an electron emission layer having a convex shape on the conductive material layer for the cathode electrode or a part of the cathode electrode by electrolyzing the electron emission layer. The method for manufacturing a cold cathode field emission device, comprising: 6. An electron emitting portion comprising: (a) a cathode electrode formed of a conductive material layer for a cathode electrode provided on a support; and (b) a plurality of electron emitters formed on the cathode electrode. And (c) a gate electrode having an opening, which is disposed above the electron-emitting portion, and a method for manufacturing a cold cathode field emission device, wherein: (A) a conductive material for a cathode electrode; A step of forming a base layer on the layer or the cathode electrode, and (B) a step of electrolyzing the base layer to leave a convex base layer on the conductive material layer for the cathode electrode or a part of the cathode electrode, C) A method of manufacturing a cold cathode field emission device, which comprises forming an electron emission layer on the conductive material layer for the cathode electrode or the cathode electrode, and on the base layer. 7. A cold cathode field electron emission device comprising a cathode panel having a plurality of cold cathode field emission devices and an anode panel having a phosphor layer and an anode electrode joined together at their peripheral portions. The element is composed of (a) a cathode electrode formed of a conductive material layer for a cathode electrode provided on a support, and (b) an electron emitting portion composed of a plurality of electron emitters formed on the cathode electrode. A method of manufacturing a cold cathode field emission display, comprising: (A) a step of forming an electron emission layer on a conductive material layer for a cathode electrode or on a cathode electrode; and (B) the electron emission. A step of leaving a convex electron-emitting layer on the conductive material layer for the cathode electrode or a part of the cathode electrode by electrolyzing the layer. Method for manufacturing a display device. 8. A cathode panel having a plurality of cold cathode field emission devices, and an anode panel having a phosphor layer and an anode electrode joined together at their peripheral portions. The element is composed of (a) a cathode electrode formed of a conductive material layer for a cathode electrode provided on a support, and (b) an electron emitting portion composed of a plurality of electron emitters formed on the cathode electrode. A method of manufacturing a cold cathode field emission display comprising: (A) a step of forming a base layer on the conductive material layer for the cathode electrode or on the cathode electrode; and (B) electrolysis of the base layer. Thereby leaving a convex base layer on the conductive material layer for the cathode electrode or a part of the cathode electrode, and (C) on the conductive material layer for the cathode electrode or on the cathode electrode, and the base layer. A method of manufacturing a cold cathode field emission display, comprising forming an electron emission layer thereon. 9. A cold cathode field electron emission device comprising a cathode panel having a plurality of cold cathode field emission devices, and an anode panel having a phosphor layer and an anode electrode joined together at their peripheral portions. The element is (a) a cathode electrode formed of a conductive material layer for a cathode electrode provided on a support, and (b) an electron emitting portion formed of a plurality of electron emitters formed on the cathode electrode, (C) A method of manufacturing a cold cathode field emission device, comprising: a gate electrode having an opening, which is disposed above an electron emission portion, wherein an electron emitter is (A) a conductive material layer for a cathode electrode or Forming an electron emission layer on the cathode electrode; and (B) electrolyzing the electron emission layer to form a convex electron emission layer on the conductive material layer for the cathode electrode or a part of the cathode electrode. A method of manufacturing a cold cathode field emission display, characterized by being formed by a step of leaving. 10. A cathode panel having a plurality of cold cathode field emission devices, and an anode panel having a phosphor layer and an anode electrode joined together at their peripheral portions. The element is (a) a cathode electrode formed of a conductive material layer for a cathode electrode provided on a support, and (b) an electron emitting portion formed of a plurality of electron emitters formed on the cathode electrode, (C) A method of manufacturing a cold cathode field emission device, comprising: a gate electrode having an opening, which is disposed above an electron emission portion, wherein an electron emitter is (A) a conductive material layer for a cathode electrode or A step of forming a base layer on the cathode electrode; and (B) a step of electrolyzing the base layer to leave a convex base layer on the conductive material layer for the cathode electrode or a part of the cathode electrode. ) Cathode electrode conductive material layer or the cathode electrode, and manufacturing method of a cold cathode field emission display, and forming the process of forming the electron emitting layer on the base layer.