JP2003118164A - Integrated light emitting device, aligner and recorder - Google Patents

Abstract

PROBLEM TO BE SOLVED: To correct variation of emission among respective light emitting points and variation of aging inexpensively with high accuracy concerning to correction of the quantity of light among individual light emitting elements which is the problem of an integrated light emitting device using an organic EL element as a light emitting source. SOLUTION: The integrated light emitting device comprises a group of a plurality of light emitting elements, a light receiving means for detecting emission of the light emitting elements, means for actuating storage operation of the light receiving means, means for comparing image data with a signal from the storage operation actuating means, and means for controlling the emission time of the light emitting element based on the output from the comparing means. Emission of respective light emitting elements is ended at a stage where the integrated value of emission from individual light emitting elements reaches a specified level thus sustaining a constant emission.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an integrated light emitting device used in an exposure device or the like provided in a recording device such as an electrophotographic copying machine or a printer, and also to an exposure device and a recording device. Relates to reduction of variation in light amount in a light emitting element group using a light emitting element whose light emission characteristic is typified by an organic electroluminescence element (organic EL element).

[0002]

2. Description of the Related Art Conventionally, a scanner (exposure device) using a light-emitting body composed of a light-emitting diode or a laser diode as a light source for exposing a photoconductor has been proposed and is used as an exposure apparatus for a recording device such as a copying machine or a printer. , Is widely and commonly used.

Particularly, in the case of an exposure apparatus using a light emitting body composed of a diode, there is an advantage that the apparatus can be easily downsized.

On the other hand, since it is necessary to form the light-emitting elements in a one-dimensional array, the variation in the light amount of each light-emitting element is a serious problem.

Further, in recent years, research and development of organic EL elements have been actively carried out. However, when the organic EL elements are applied to an exposure apparatus, not only initial light amount variations but also changes with time in light emission characteristics and light emitting elements. It is generally known that there is a variation in characteristics over time, and it is very difficult to apply the organic EL element to an exposure apparatus.

In order to solve the above problem, for example, Japanese Patent Laid-Open No. 11-109918 discloses a technique for correcting a change over time by changing a driving condition such as a driving current value according to a deterioration characteristic. Japanese Patent Laid-Open No. 238333 proposes a technique of detecting a light emission amount using a light receiving unit and correcting the light emission amount using a signal from the light receiving unit.

[0007]

However, the above-mentioned prior art has the following problems.

The first problem is related to the correction method.

In the correction method disclosed in Japanese Patent Laid-Open No. 11-109918, the time-dependent change (life characteristic) of the light emitting element is stored in advance in a storage means such as a memory, and the time when the light emitting element is actually driven is further stored. There is disclosed a technique in which the drive condition is set by calculating the correction amount by detecting the value, performing the calculation with the aging characteristic, and calculating the correction amount.

However, in the above method, since a typical change with time is stored in the storage means, variations in the amount of emitted light due to batches or lots in the production of light emitting elements, and further variations among individual light emitting points in the same device are corrected. There is a problem that you cannot do it.

The correction method disclosed in Japanese Unexamined Patent Publication No. 2000-238333 discloses a technique of detecting the light amount of a light emitting point before or during exposure and calculating drive conditions by a central processing unit (CPU). ing.

However, by detecting the amount of light during exposure, C
In the method of inputting to PU, performing calculation, and feeding back to the drive voltage, the time required for correction is required, and high-speed recording becomes difficult. Before exposure (during standby)
However, the method of performing the correction cannot correct the change in the light amount that occurs during the exposure of one image data.

Further, in the above-mentioned conventional technique, it is difficult to reduce the cost of the device because the recording means, the calculating means and the like are indispensable for the correction of the light emission amount.

The second problem relates to the structure of the light emitting element and the light detecting means used for detecting the amount of light emission.

Japanese Unexamined Patent Publication (Kokai) No. 11-109918 proposes a structure in which a light emitting element and a light detecting means are arranged via an element substrate or a sealing substrate. Since the sealing substrate is required to have a thickness of several hundreds of μm to several mm, in consideration of the light diffusion distance in the above configuration, each of the light emitting points has a resolution of 600 dpi, 1200 dpi, which is the resolution required for the recording apparatus. It is very difficult to accurately detect the amount of light.

The present invention has been made to solve the above problems, and is an integrated light emitting device provided in a conventional exposure apparatus and the like, and in particular, an integrated light emitting device using an organic EL element as a light emitting source. Concerning the light amount correction that has been a problem in the device, it is possible to correct the light amount variation for each light emitting point and the variation over time with high accuracy and at low cost, and also high-speed recording is possible. An object is to provide an apparatus, an exposure apparatus, and a recording apparatus including the exposure apparatus.

[0017]

A first invention for solving the above-mentioned problems is to provide a light emitting element group consisting of a plurality of light emitting elements, a light receiving means for detecting light emission of the light emitting element, and a light receiving means for accumulating the light receiving means. Storage means for operating, comparison means for comparing the image data with the signal from the storage means, and control means for controlling the light emission time of the light emitting element based on the output of the comparison means. Is an integrated light emitting device.

According to the present invention, in the above-mentioned first invention, "the control means has a function of starting light emission of a plurality of light emitting elements at the same time when the light emitting element group starts emitting light."
"The control means has a function of terminating the light emission of the light emitting element when the signal from the accumulation operation means reaches a value corresponding to the image data." The use of a light receiving element group including light receiving elements provided corresponding to the respective light emitting elements included therein "is included as a preferable aspect thereof.

A second invention for solving the above-mentioned problems is as follows.
A light emitting element group composed of a plurality of light emitting elements, a light receiving means for detecting light emission of the light emitting element, a storage operation means for causing the light receiving means to perform storage operation, and image data and a signal from the storage operation means are compared. A light emitting element group comprising a plurality of light emitting elements, the light receiving element group being formed on a substrate; A light-receiving element group including a plurality of light-receiving elements provided corresponding to the light-emitting element, wherein the light-emitting element and the light-receiving element are stacked and formed through a light-transmissive electrode. Type light emitting device.

In the second aspect of the present invention, "the control means has a function of starting light emission from a plurality of light emitting elements at the same time when the light emitting element group starts emitting light."
"The control means has a function of ending the light emission of the light emitting element when the signal from the accumulation operation means reaches a value corresponding to the image data", "the substrate is formed with a thin film semiconductor element" “It is an insulating substrate” and “the substrate is a semiconductor substrate on which a semiconductor element is formed” is included as a preferable embodiment.

The present invention is the above-mentioned first and second inventions, wherein the plurality of light emitting elements included in the light emitting element group are
One-dimensional arrangement is included as a preferable mode.

The present invention also includes, as a third invention, an exposure apparatus including the integrated light-emitting device of the first and second inventions.

A fourth aspect of the present invention is a recording apparatus having an electrophotographic photosensitive member, an exposure device, and a lens array provided between the electrophotographic photosensitive member and the exposure device. The exposure apparatus also includes a recording apparatus, which is the exposure apparatus of the third invention.

[0024]

BEST MODE FOR CARRYING OUT THE INVENTION (First Embodiment)
The first embodiment will be described with reference to FIG.

FIG. 1 is a block diagram of an embodiment of the integrated light emitting device of the present invention, showing the structure of the integrated light emitting device in which light emitting elements for N pixels are arranged. FIG. 2 is an equivalent circuit diagram of a drive circuit and a storage circuit for one pixel in one embodiment of the integrated light emitting device of the present invention.

In FIG. 1, 101 is a light emitting element, and 102 is
Is a light receiving element, and the same number of light receiving elements 102 are provided corresponding to each light emitting element 101. In addition, the light emitting element 101 has a driving circuit 103 for each pixel and ON of light emission.
Drive control is performed by a control circuit 104 that controls ON / OFF, and for the light receiving element, a storage circuit 105 for performing a storage operation, a DA converter 106 for converting image data of each pixel into an analog signal, and storage. Comparator 107 for comparing the optical signal level during operation and image data
Is provided in each pixel.

The image data is stored in the shift register 108.
, And all the pixels are simultaneously D
-Transferred to the A converter 106.

Further, the output of the comparator 107 is connected to the control circuit 104 of the light emitting element 101, and is further transferred via the shift register 110 to the power supply control circuit 111 for setting the driving condition (driving voltage) of the driving circuit 103.

In FIG. 2, the drive circuit 103 of the light emitting element 101 in FIG. 1 is composed of a CMOS buffer circuit to which the power supply voltage is supplied from the power supply control circuit 111, and the storage circuit 105 of the light receiving element 102 is reset. It is composed of a transistor 201 and a PMOS source follower circuit 202.

Next, the operation of the first embodiment of the present invention will be described in detail with reference to FIG. FIG. 3 is a timing chart showing a driving method of the integrated light emitting device of the form shown in FIG.

In FIG. 3, the image data has 2 bits and 4 gradations, and each pixel image signal level is Din_
1 → LEVEL2, Din_2 → LEVEL3, Din
An example of setting _N → LEVEL4 is shown.

First, after sequentially transferring the image data DATA through the shift register, and after resetting the light receiving elements to the initial state by the reset pulse RES. By the latch pulse LA, image data is converted into a desired analog signal at the same time for all pixels, that is, DA conversion is performed.

Here, in the state after the latch pulse LA is inputted and the image data is DA converted, the comparator 107 shown in FIG. 1 outputs a signal of the reset state of the light receiving element and the image after DA conversion. Data has been entered.

Then, by the drive start pulse ST of the light emitting element, drive pulses CNT_1 to CNT_N are simultaneously applied to all pixels.
Turns on and light emission starts. At the same time when the light emission is started, an optical signal by the optical carrier generated in the light receiving element by the light emission is output from the storage circuit, and the signal SO
UT_1-SOUT_N rises with time. Here, paying attention to the first pixel shown in FIG. 3, the signal SOUT_1 from the light receiving element of the first pixel is LE image data.
Light emission is maintained until reaching VEL1, but L
When the voltage reaches EVEL1, the output of the comparator is inverted, and the inverted signal turns off the drive circuit.

Similarly, the other pixels continue to emit light until the amount of light generated by the light receiving element becomes the same as the image data, and when the light amount becomes the same as the image data, the light emission ends.

That is, in this embodiment, the light emission starts at the same time for all pixels, and the light emission ends when the light amount detected by the light receiving element is accumulated as an integral value in the accumulating means, and the integral value corresponds to the image data. When the level is reached, the operation ends for each individual pixel.
In the present invention, the light emission of all the light emitting elements does not necessarily have to start at the same time, and if the light emitting time of each light emitting element is controlled by comparing the integrated value of the light amount detected by the light receiving means with the image data. Good, but when it is applied to an electrophotographic recording device that requires a high-speed exposure operation for each line,
A mode in which light emission of all light emitting elements is simultaneously started as in the present embodiment, or a mode in which light emission of at least a plurality of light emitting elements is simultaneously started by dividing all light emitting elements into a plurality of blocks and emitting light in each block Is preferred.

Here, considering the case where the light amount of the light emitting element decreases during light emission in the present invention, when the light amount decreases, the inclination of the light receiving element output during light emission decreases from the middle. However, although the light emission time becomes longer as the inclination becomes smaller, considering the integrated amount of light emission, the integrated amount does not change even if the light amount change occurs or does not occur. Therefore, it is possible to control the light amount with high accuracy without requiring complicated control of the drive voltage and control of the drive current as in the conventional invention.

For example, in an electrophotographic recording apparatus, it is generally known that the document density has a correlation with the integrated amount of light incident on the photoconductor.

Therefore, by applying the present invention to an electrophotographic recording apparatus, it is possible to perform high-precision exposure corresponding to image data regardless of any change in the light-emitting characteristic of the light-emitting element, and to always provide high It is possible to obtain a high quality image.

Further, in FIG. 1, the comparator output of each pixel is connected to the power supply control circuit.
In consideration of the case where the light quantity is insufficient within the desired time, for example, before performing the main exposure, it is checked whether the comparator inverts all pixels by performing the full-scale light emission operation in advance. As shown in FIG. 2, it is possible to provide a sequence such as increasing the drive voltage of the drive circuit. Furthermore, it is possible to provide a sequence in which after setting the drive voltage condition of the drive circuit in which the comparators of all pixels are inverted, the drive voltage condition in which the margin is added to the voltage is reset.

Needless to say, the effect of the present invention is effective whether a constant voltage drive circuit or a constant current drive circuit is used as the drive circuit in FIG.

In addition, in order to correct the variation in sensitivity of the light receiving element, the variation data of the light receiving element is stored in the storage means in advance, and the result calculated from the original image data is
Image data may be input to the exposure apparatus of the present invention.

Although FIG. 2 shows an example in which the optical signal of the light receiving element is output by the PMOS source follower, an amplifier may be provided if sensitivity adjustment is required, and image data is DA converted. Gain adjusting means may be provided in a portion, and in the present invention, it is possible to perform optimum design for these parameters according to the characteristics of the light emitting element and the light receiving element.

Further, in the present invention, the example in which the image data has 2 bits and 4 gradations is shown, but the number of bits of the image data may be increased or decreased depending on the required gradation number.

(Second Embodiment) The present embodiment shows an example of an integrated light emitting device in which a light emitting element and a light receiving element are laminated and formed with a light transmitting electrode interposed therebetween.

FIG. 4 is a schematic view of a sectional structure of the integrated light emitting device. In this embodiment, the sectional structure of the integrated light emitting device in which the circuit block shown in FIG. 1 is formed on a crystalline silicon substrate is shown.

In FIG. 4, a semiconductor element that can be formed by a general semiconductor process is formed on a crystalline silicon substrate 401. Specifically, a PN that serves as a light receiving element
A photodiode 402, an NMOS transistor 403 that constitutes a peripheral circuit such as a drive circuit and a storage circuit, and a PMO
The S-transistor 404 is shown in FIG.
Capacitance element (not shown), resistance element (not shown) as required
May be formed.

On the crystalline silicon substrate 401 on which the above circuit element is formed, the first light-transmissive conductive film 406 and the organic hole transport layer 40 which constitute an organic EL element with an insulating layer 405 interposed.
7, organic electron transport layer 408, second light transmissive conductive film 40
9 and a protective film 410 are sequentially stacked.

In FIG. 4, the first light-transmissive conductive film 406.
A portion A defined by the second light transmissive conductive film 409 serves as a main light emitting region, and light emission from the light emitting layer can be emitted to both the protective film 410 side and the crystalline silicon substrate 401 side.

Here, it is preferable that the second light-transmissive conductive film 409 provided in the direction of extracting the light used for exposure has a high transmittance, but the first light-transmissive conductive film 406 provided on the light receiving element side. Since the transmittance can be determined depending on the sensitivity design of the light receiving element, for example, a semitransparent metal electrode or the like may be used.

When the structure of this embodiment is used in the integrated light emitting device of the first embodiment, the light emission on the protective film 410 side is taken out for use in exposure or the like, and the light emission on the crystalline silicon substrate 401 side is used for light emission detection. Since it is used and the light emission of the light emitting element itself can be detected by the photodiode in real time, the integrated amount of light emission can be measured with extremely high accuracy and high speed.

In the case where the circuit element formed on the crystalline silicon is used, the optical carrier generated by the light emission from the light emitting element may affect the original circuit operation. Therefore, in this embodiment, the light receiving element is used. The light-shielding layer 411 is provided in a region other than the above portion, so that the effective light-receiving region is shown in FIG.
The area is indicated by B in the drawing, which is smaller than the light emitting area A described above.

By the way, the dimension A is determined by the resolution of the exposure apparatus. For example, in the case of 600 dpi, it is approximately 4
It becomes about 2 μm.

(Third Embodiment) The present embodiment shows an example of an exposure apparatus using the integrated light emitting device of the embodiments shown in the first and second embodiments.

FIG. 5 is a schematic view of a planar structure of an exposure apparatus constructed by using the integrated light emitting device shown in the first and second embodiments. The integrated type shown in the first and second embodiments. 1 shows an exposure apparatus configured by arranging light emitting devices one-dimensionally. FIG. 6 is a schematic view of a cross-sectional structure taken along the line aa ′ in FIG.

In FIG. 5 and FIG. 6, M integrated light emitting devices 502 are arranged one-dimensionally on a substrate 501, and each integrated light emitting device 502 is wire bonded 5
03 to connect to the wiring of the base 501,
4 is electrically connected to an external device. Further, the above-mentioned base 501 is fixed in the housing 506, and the exposure apparatus of the present invention is constructed. Here, a light-transmissive sealing member 505 is provided on the base body 501 so as to cover the integrated light emitting device 502, and an inert gas is sealed in order to prevent characteristic deterioration of the organic EL element. However, an adsorbent or the like may be provided inside the light-transmissive sealing member 505 if necessary.

As described above, by using the integrated light emitting device shown in the first and second embodiments, it is possible to reduce the number of electrical connections by wire bonding even though the driving method is for all pixels at the same time. Therefore, the mounting yield can be improved, and as a result, an inexpensive exposure apparatus can be provided.

(Fourth Embodiment) This embodiment shows an embodiment of a recording apparatus equipped with the exposure apparatus of the present invention.

FIG. 7 is a cross-sectional view showing the structure of the main part of an embodiment of a recording apparatus equipped with the exposure apparatus of the third embodiment. In FIG. 7, reference numerals 700a to 700d denote exposure devices, and 7
01a to 701d are developing means, 702a to 702d are charging means, 703a to 703d are rod lens arrays, 7
Reference numerals 04a to 704d denote transfer means, 705 denotes paper conveying means,
Reference numerals 706a and 706b are sheet feeding means, 707 is a recording sheet, and 708a to 708d are photosensitive drums.

The operation of the above-described structure will be described. Light emitted from the exposure devices 700a to 700d is transferred to the photosensitive drums 708a to 708d by the rod lenses 703a to 703d.
8d, developed by developing means 701a to 701d, and transferred to recording sheet 7 by transfer means 704a to 704d.
It is transferred to 07. After that, the image is fixed by a fixing unit (not shown), and a series of electrophotographic recording is completed.

As described above, in the present invention,
The integrated amount of light emitted from each light emitting point is converted into an optical signal of the light receiving element corresponding to each light emitting point, accumulated as an integrated amount, and the light emitting time of the light emitting element is controlled by comparing the integrated value with image data. Since the configuration and the driving method are used, the light quantity of each light emitting unit can be controlled with high accuracy and high speed with respect to the image data, and further, the light emitting element has changed the light emitting characteristics under any circumstances. Even in this case, it is possible to always provide a high quality image.

Particularly, in the tandem type electrophotographic recording apparatus described in the fourth embodiment, the apparatus is downsized,
The present invention is a more effective means due to the characteristics of high speed and maintenance-free.

Although an example in which light emission is started at the same time for all pixels is shown here, the same effect can be obtained by the present invention in a driving system such as block driving.

In the present invention, the effect is particularly great in an electrophotographic recording apparatus in which the integrated amount of light emission of the light emitting element determines the image quality, but in addition, the present invention is applied to a display device such as a display. Even in such a case, the present invention has the effect of improving the quality of the displayed image.

(Fifth Embodiment) A fifth embodiment of the present invention will be described with reference to FIGS.

FIG. 8 is a block diagram of an embodiment of the integrated light emitting device of the present invention, showing the structure of the integrated light emitting device in which light emitting elements are arranged for N pixels. FIG. 9 is a timing chart showing a driving method of the integrated light emitting device of the form shown in FIG.

In the present embodiment, as shown in FIG. 8, a portion for converting image data into an analog signal and reading it into a comparator provided in each pixel has a configuration different from that of the first embodiment. The operation of this embodiment will be described below with reference to FIGS.

In FIG. 8, the image data DATA is first converted into an analog signal by the DA converter 801, and is sent to the data input line 803 common to all pixels via the buffer amplifier 802. On the other hand, the shift register 804
Thus, the first sample hold circuit 805 provided in each pixel operates sequentially and holds the analog signal of the data input line 803.

After the image data for all the pixels is held in the first sample hold circuit 805, the light receiving element is reset to the initial state by the reset pulse RES, and then the first pulse hold is performed for all the pixels simultaneously by the latch pulse LA. The image data held in the circuit 805 is read into the second sample hold circuit 807 via the buffer amplifier 806.

Therefore, in the above state, the signal of the reset state of the light receiving element and the image data after D-A conversion are input to the comparator 107 shown in FIG.

The operation from here on is the same as that of the first embodiment.

In this embodiment, since the circuit scale per pixel can be reduced, it is possible to provide a cheaper exposure apparatus.

(Sixth Embodiment) The present embodiment shows an example of an integrated light emitting device in which a light emitting element and a light receiving element are laminated and formed with a light transmitting electrode interposed therebetween.

FIG. 10 is a schematic diagram of a cross-sectional structure of the integrated light emitting device according to this embodiment.

In FIG. 10, on an insulating substrate 1001, an amorphous silicon PIN photodiode 1002 which serves as a light receiving element, and a polycrystalline silicon NMOS transistor 100 which constitutes peripheral circuits such as a drive circuit and a storage circuit are formed.
3, and polycrystalline silicon PMOS transistor 1004
In addition, if necessary, a capacitive element (not shown),
A resistance element (not shown) may be formed.

Insulating substrate 10 on which the above circuit elements are formed
01 through the insulating layer 405, the first light-transmissive conductive film 406 and the organic hole transport layer 40 that form the organic EL element.
7, organic electron transport layer 408, second light transmissive conductive film 40
9 and a protective film 410 are sequentially stacked.

In FIG. 10, the first light transmitting conductive film 40 is formed.
6 and the portion C defined by the second light transmissive conductive film 409 serves as a main light emitting region, and light emitted from the organic EL element can be extracted from both the protective film 410 direction and the transparent substrate 1001 direction.

Further, in the present embodiment, the amorphous silicon PIN photodiode 100 which becomes the light receiving element is used.
A metal electrode 1005 is provided as the second lower electrode,
The light transmitted through the amorphous silicon PIN photodiode 1002 serving as the light receiving element is reflected by the metal electrode 1005, so that the light utilization efficiency can be increased.

As shown in this embodiment, the present invention can also be formed by using a general thin film semiconductor forming process and an organic EL process.

Furthermore, in the case of the present embodiment, by using a large insulating substrate, it is possible to consistently process up to the process immediately before the connector mounting, so that it is possible to provide a more inexpensive exposure apparatus. Will also be possible.

Needless to say, in the present embodiment,
Since the organic EL element is laminated on the amorphous silicon PIN photodiode 1002, the amorphous silicon PIN photodiode 1002 described above is used.
It is possible to provide an exposure apparatus that can always obtain a high-quality image even if the light-emitting characteristics of the organic EL element fluctuate by performing the storage operation.

(Seventh Embodiment) This embodiment shows an example of an exposure apparatus using the integrated light emitting device of the embodiments shown in the fifth and sixth embodiments.

FIG. 11 is a schematic plan view of an exposure apparatus constructed by using the integrated light emitting device shown in the fifth and sixth embodiments.

In FIG. 11, on the insulating substrate 1001, in addition to the above-mentioned light emitting element and light receiving element array 1101 and other circuit elements 1102, a semiconductor chip 1103 for driving and controlling the above elements and signal processing. Are provided and electrically connected to the wiring formed on the insulating substrate 1001. Further, the input / output terminals of the semiconductor chip 1103 described above are electrically connected to an external device via the connector 504.

Further, as in the third embodiment, a light transmissive sealing member 505 is provided on the insulating substrate 1001 so as to cover the integrated light emitting device.

The exposure apparatus of this embodiment can be applied to the recording apparatus of the fourth embodiment as in the case of the third embodiment, and the same effects as the effects shown in the fourth embodiment can be obtained. .

[0087]

As described above, according to the present invention,
An integrated light-emitting device that can always obtain a light emission amount corresponding to image data even if a light-emitting element whose light-emission characteristics change over time, as represented by an organic EL element, and exposure using the same Since the device can be realized by a device having a simple circuit configuration, it is possible to inexpensively provide an exposure device, a recording device, and the like that can obtain a high-quality image at high speed.

[Brief description of drawings]

FIG. 1 is a block diagram of an embodiment of an integrated light emitting device of the present invention.

FIG. 2 is an equivalent circuit diagram of a drive circuit and a storage circuit for one pixel in one embodiment of the integrated light emitting device of the present invention.

FIG. 3 is a timing chart showing a driving method of the integrated light emitting device of the form shown in FIG.

FIG. 4 is a schematic view of a cross-sectional structure of an integrated light emitting device of the present invention.

FIG. 5 is a schematic view of a planar structure of an embodiment of the exposure apparatus of the present invention.

6 is a schematic diagram of a cross-sectional structure taken along the line aa ′ in FIG.

FIG. 7 is a cross-sectional view showing a main configuration of an embodiment of a recording apparatus equipped with an exposure apparatus of the present invention.

FIG. 8 is a block diagram of an embodiment of the integrated light emitting device of the present invention.

9 is a timing chart showing a driving method of the integrated light emitting device of the form shown in FIG.

FIG. 10 is a schematic view of a cross-sectional structure of an integrated light emitting device of the present invention.

FIG. 11 is a schematic view of a planar structure of an embodiment of the exposure apparatus of the present invention.

[Explanation of symbols]

101 light emitting element 102 light receiving element 103 drive circuit 104 control circuit 105 Storage circuit 106 DA converter 107 Comparator 108 shift register 109 latch circuit 110 shift register 111 Power supply control circuit 201 reset transistor 202 PMOS source follower circuit 401 crystalline silicon substrate 402 PN photodiode 403 NMOS transistor 404 PMOS transistor 405 insulation layer 406 Light-transmissive conductive film 407 Organic Hole Transport Layer 408 Organic Electron Transport Layer 409 Light-transmissive conductive film 410 Protective film 411 light shielding layer 501 base 502 Integrated light emitting device 503 wire bonding 504 connector 505 Light-transmissive sealing member 506 housing 700a-700d exposure apparatus 701a to 701d developing means 702a to 702d Charging means 703a to 703d Rod lens array 704a to 704d Transfer means 705 sheet conveying means 706a to 706b Paper feeding means 707 recording paper 708a to 708d Photosensitive drum 801 DA converter 802 buffer amplifier 803 Data input line 804 shift register 805 First sample and hold circuit 806 buffer amplifier 807 Second sample and hold circuit 1001 insulating substrate 1002 Amorphous silicon PIN photodiode 1003 Polycrystalline silicon NMOS transistor 1004 Polycrystalline silicon PMOS transistor 1005 metal electrode 1101 Light receiving element array 1102 Other circuit elements 1103 Semiconductor chip

Claims (12)

[Claims] 1. A light emitting element group composed of a plurality of light emitting elements, a light receiving means for detecting light emission of the light emitting element, a storage operation means for causing the light receiving means to perform storage operation, image data and a signal from the storage operation means. And a control unit that controls the light emission time of the light emitting element based on the output of the comparison unit. 2. The integrated light emitting device according to claim 1, wherein the control means has a function of starting light emission from a plurality of light emitting elements at the same time when the light emitting element group starts to emit light. 3. The control means has a function of terminating the light emission of the light emitting element when the signal from the accumulation operation means reaches a value corresponding to the image data. The integrated light-emitting device according to. 4. A light receiving element group comprising light receiving elements provided corresponding to the respective light emitting elements included in the light emitting element group is used as the light receiving means.
4. The integrated light emitting device according to any one of items 1 to 3. 5. A light emitting element group composed of a plurality of light emitting elements, a light receiving means for detecting light emission of the light emitting element, a storage operation means for causing the light receiving means to perform storage operation, image data and a signal from the storage operation means. Comparing means, and, having a control means for controlling the light emission time of the light emitting element based on the output of the comparing means, a light emitting element group consisting of the plurality of light emitting elements is formed on a substrate, The light receiving means is a light receiving element group including a plurality of light receiving elements provided corresponding to the light emitting element, and the light emitting element and the light receiving element are formed by laminating via a light transmissive electrode. An integrated light emitting device. 6. The integrated light emitting device according to claim 5, wherein the control means has a function of starting light emission from a plurality of light emitting elements at the same time when the light emitting element group starts to emit light. 7. The control means has a function of ending the light emission of the light emitting element when the signal from the accumulation operation means reaches a value corresponding to the image data. The integrated light-emitting device according to. 8. The integrated light emitting device according to claim 5, wherein the substrate is an insulating substrate on which a thin film semiconductor element is formed. 9. The integrated light emitting device according to claim 5, wherein the substrate is a semiconductor substrate having a semiconductor element formed thereon. 10. The integrated light emitting device according to claim 1, wherein the plurality of light emitting elements included in the light emitting element group are arranged one-dimensionally. apparatus. 11. An exposure apparatus comprising the integrated light emitting device according to any one of claims 1 to 10. 12. A recording apparatus having an electrophotographic photosensitive member, an exposure device, and a lens array provided between the electrophotographic photosensitive member and the exposure device, wherein the exposure device comprises: A recording apparatus, which is the exposure apparatus according to item 11.