JP2003117897A - Micro actuator - Google Patents

Abstract

PROBLEM TO BE SOLVED: To increase controllable maximum moving range of a movable element without increasing applied voltage. SOLUTION: An upper base plate 22 is attached to a lower base plate 21. A moving frame element 25 is provided on a base portion 23 of the upper base plate 22 through a supporting beam 24, and a moving element 27 is provided on the moving frame element 25 through a supporting beam 26. An upper electrode 28 is provided on a back surface of the moving frame element 25, and an upper electrode 29 is provided on a back surface of the moving element 27. A recessed portion 31 is provided on an upper surface 30 of the lower base plate 21, and a lower electrode 32 is provided on the upper surface 30. A lower electrode 33 is provided on the recessed portion 31, and the lower electrodes 32, 33 are respectively positioned at parts corresponding to the upper electrodes 28, 29.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a microactuator used for optical measuring instruments, optical switches and the like.

[0002]

2. Description of the Related Art A translational microactuator is used in an optical measuring instrument that requires a highly accurate actuator function, and a rotary microactuator is used in an optical switch using an optical scanner driven by a mirror.

FIG. 14 is a partially cutaway perspective view showing a conventional translation microactuator, FIG. 15 is a front sectional view showing the translation microactuator shown in FIG. 14, and FIG. 16 is FIG.
5 is an EE sectional view of FIG. As shown in the figure, the lower substrate 1
The upper substrate 2 is attached to the upper substrate 2, and the movable body 5 is provided on the base portion 3 of the upper substrate 2 via the support beam 4, and the base portion 3, the support beam 4, and the movable body 5 are integrally provided. In addition, the moving body 5
The upper electrode 6 is provided on the back surface of the lower substrate 1, the lower electrode 8 is provided on the upper surface 7 of the lower substrate 1, and the lower electrode 8 is located at a position corresponding to the upper electrode 6.

In this translational microactuator, when a voltage is applied between the upper electrode 6 and the lower electrode 8, the upper electrode 6 is attracted by electrostatic attraction.
As shown in FIG. 17, the moving body 5 moves downward.

FIG. 18 is a plan view showing a conventional rotary microactuator, FIG. 19 is a front sectional view showing the rotary microactuator shown in FIG. 18, and FIG.
FIG. As shown in the figure, the upper substrate 12 is attached to the lower substrate 11, and the rotating body 15 is provided on the base portion 13 of the upper substrate 12 via the supporting beam 14. The base portion 13, the supporting beam 14, and the rotating body 15 are integrally formed. It is provided. Also,
An upper electrode 16 is provided on the back surface of the rotating body 15, and a lower electrode 18 is provided on the upper surface 17 of the lower substrate 11.
8 is located at a position corresponding to the upper electrode 16.

In this rotary microactuator, one of the upper electrode 16 and the lower electrode 18 is shown in FIG.
When a voltage is applied between the lower electrode 18 on the right side of the paper and the upper electrode 16 is attracted by the electrostatic force, as shown in FIG.
As shown in FIG. 21, the rotating body 15 rotates in the clockwise direction on the paper surface of FIG. When a voltage is applied between the upper electrode 16 and the lower electrode 18 on the left side of the paper surface of FIG. 19, the rotating body 15 rotates counterclockwise in the paper surface of FIG.

[0007]

FIG. 22 is a schematic view of FIG. 14 to FIG.
6 is a graph showing the relationship between the electrostatic attractive force Fe between the upper electrode 6 and the lower electrode 8 in the translational microactuator shown in FIG. 6, the spring elastic force Fm of the support beam 4 and the displacement y of the moving body 5, and lines a to The applied voltages Va are 15, 23.
The change of the electrostatic attractive force Fe in the case of 7 and 30 V is shown, and the line d shows the change of the spring elastic force Fm. The gap g between the upper electrode 6 and the lower electrode 8, that is, the distance between the upper electrode 6 and the lower electrode 8 when no voltage is applied between the upper electrode 6 and the lower electrode 8 is 14 μm. As is clear from this graph, the spring elastic force Fm is proportional to the displacement y. Further, under a certain applied voltage, the electrostatic attractive force Fe is almost inversely proportional to the distance between the upper electrode 6 and the lower electrode 8. When the applied voltage Va is 15 V, the electrostatic attractive force Fe and the spring elastic force Fm match when the displacement y is about 1 μm and about 10 μm. Actually, when the displacement y is about 1 μm, a stable balance is shown. Therefore, when the displacement y is about 1 μm, the electrostatic attraction F
e and the spring elastic force Fm are balanced. In addition, the applied voltage Va
Is 23.5 V, the electrostatic attractive force Fe and the spring elastic force Fm match only when the displacement y is about 4.7 μm. The voltage 23.5V is the threshold voltage of the system that balances the electrostatic force and the spring elastic force. In addition, the applied voltage Va is 30
In the case of V, the electrostatic attractive force Fe and the spring elastic force Fm are not balanced regardless of the displacement y, and the electrostatic attractive force Fe is always larger than the spring elastic force Fm. Is completely attracted to.

FIG. 23 is a graph showing the relationship between the applied voltage Va and the displacement y in the translational microactuator shown in FIGS. As is apparent from this graph, when the applied voltage Va is small, the displacement y increases as the applied voltage Va increases, but when the applied voltage Va reaches the threshold voltage of 23.7 V (displacement y is about 4.7 μm). ,
The slope of the line indicating the change in the displacement y becomes infinite, and the displacement y becomes the gap g of 14 μm. That is, the upper electrode 6
Are completely attracted to the lower electrode 8. In this way, the maximum displacement y that is the limit where the upper electrode 6 is not attracted to the lower electrode 8, that is, the maximum controllable displacement is about 1 / g of the gap g.
It is 3. This result does not depend on the spring elastic coefficient of the support beam 4 or the size of the balance system of the electrostatic force and the spring elastic force, but is generally established in the balance system of the electrostatic force and the spring elastic force.

Therefore, in the translational microactuator shown in FIGS. 14 to 16, when the displacement y is smaller than the controllable maximum displacement, the displacement y of the moving body 5 is freely controlled by adjusting the applied voltage Va. However, if the displacement y becomes larger than the controllable maximum displacement, the displacement y of the moving body 5 cannot be freely controlled.

Also, in the rotary microactuator shown in FIGS. 18 to 20, the maximum rotation angle at which the upper electrode 16 is not attracted to the lower electrode 18, that is, the controllable maximum rotation angle of the rotor 15 is the maximum rotatable angle. It is about 1/3 of the rotation angle, and when the rotation angle of the rotating body 15 is smaller than the controllable maximum rotation angle, the upper electrode 16 and the lower electrode 1
8 by adjusting the applied voltage Vr between
Although the rotation angle of 5 can be freely controlled, the rotating body 1
When the rotation angle of 5 becomes larger than the controllable maximum rotation angle,
The rotation angle of the rotating body 15 cannot be freely controlled.
For example, the maximum controllable rotation angle of the rotating body 15 is 12 degrees, and the applied voltage Vr at this time is 95V. For this reason, when the rotating body 15 is used as a micromirror, the rotation angle of the micromirror cannot be increased, so that the optical path must be lengthened to avoid interference between the optical elements, and the device becomes large.

The distance between the rear surfaces of the moving body 5 and the rotating body 15 and the upper surfaces 7 and 17 of the lower substrates 1 and 11 is increased,
By increasing the gap g and the rotatable maximum rotation angle, the controllable maximum displacement, the controllable maximum rotation angle, that is, the controllable maximum movable range can be increased. However, in this case, since it is necessary to increase the applied voltages Va and Vr, it is difficult to coexist with the control circuit, and a circuit for preventing leakage, improving withstand voltage, and converting voltage becomes complicated,
Large and expensive.

The present invention has been made to solve the above problems, and an object of the present invention is to provide a microactuator capable of increasing the controllable maximum movable range of a movable body without increasing the applied voltage. .

[0013]

To achieve this object, in the present invention, an upper substrate is attached to a lower substrate, a movable body is provided on the upper substrate, and a first upper electrode is provided on the movable body. In a microactuator in which a first lower electrode is provided at a position corresponding to the first upper electrode on the lower substrate, a movable frame body is provided on a base portion of the upper substrate via a first supporting beam, and the movable frame is provided. The movable body is provided on the body via the second support beam, the second upper electrode is provided on the movable frame body, and the second lower electrode is provided on the lower substrate at a position corresponding to the second upper electrode. Set up.

A plurality of sets of the first support beam and the movable frame body are provided, the second upper electrode is provided on each of the plurality of movable frame bodies, and the plurality of second frame electrodes of the lower substrate are provided. The second lower electrodes are provided at positions corresponding to the upper electrodes.

In these cases, a recess may be provided in the surface of the lower substrate on which the second lower electrode is provided, and the first lower electrode may be provided in the recess.

[0016]

1 is a plan view showing a translational microactuator according to the present invention, FIG. 2 is a front sectional view showing the translational microactuator shown in FIG. 1, and FIG. 3 is a sectional view taken along line AA of FIG. Is. As shown in the figure, an upper substrate 22 made of single crystal silicon is attached to a lower substrate 21 made of single crystal silicon, and a moving frame body is mounted on a base portion 23 of the upper substrate 22 via a support beam (first support beam) 24. (Movable frame)
25, a moving body (movable body) 27 is provided on the moving frame body 25 via a supporting beam (second supporting beam) 26, and the base portion 23, the supporting beam 24, the moving frame body 25, the supporting beam 26, The moving body 27 is integrally provided. Further, an upper electrode (second upper electrode) 28 is provided on the back surface of the moving frame 25, an upper electrode (first upper electrode) 29 is provided on the back surface of the moving body 27, and an upper surface 30 of the lower substrate 21 is provided. The recess 31 is provided, the lower electrode (second lower electrode) 32 is provided on the upper surface 30, the lower electrode (first lower electrode) 33 is provided on the recess 31, and the lower electrodes 32 and 33 are respectively the upper electrode 28. ,
It is located at a position corresponding to 29. The distance between the upper electrode 28 and the lower electrode 32, that is, the gap g is 14
μm.

In this translational microactuator, when a voltage is applied between the upper electrode 28 and the lower electrode 32, the upper electrode 28 is attracted by electrostatic attraction, so that as shown in FIG. Moving frame 25
And the moving body 27 moves downward. In this state, when a voltage is applied between the upper electrode 29 and the lower electrode 33, the upper electrode 29 is attracted by electrostatic attraction, so that FIG.
As shown in, the moving body 27 moves downward with respect to the moving frame body 25.

In such a translational microactuator, the moving frame 25 and the moving body 27 can be moved downward with respect to the base 23, and the moving body 27 can be moved downward with respect to the moving frame 25. Therefore, the controllable maximum displacement can be increased without increasing the gap g and without increasing the applied voltage Va.
For example, the maximum controllable displacement of the moving body 27 is about 9 μm, and at this time, between the upper electrode 28 and the lower electrode 32,
The voltage applied between the upper electrode 29 and the lower electrode 33 is 23.7V. As shown in FIGS.
As compared with the conventional translational microactuator shown in FIG. 6, the maximum controllable displacement when the applied voltage Va is the same can be approximately doubled. For this reason, it is difficult to coexist with the control circuit, and a circuit for preventing leakage, improving withstand voltage, and converting voltage becomes simple, and the size and cost are reduced. Further, since the concave portion 31 is provided on the upper surface 30 of the lower substrate 21 and the lower electrode 33 is provided in the concave portion 31, the upper frame 29 and the upper electrode 29 when the movable frame body 25 and the movable body 27 are moved downward with respect to the base portion 23 are provided. Since the distance to the lower electrode 33 can be increased, the controllable maximum displacement of the moving body 27 can be increased.

Further, in the translational microactuator having the same structure as the translational microactuator shown in FIGS. 1 to 3 and the gap g and the depth of the recess 31 are half,
The maximum controllable displacement of the moving body 27 is about 4.8 μm,
At this time, the voltage applied between the upper electrode 28 and the lower electrode 32 and between the upper electrode 29 and the lower electrode 33 is 12V. As described above, compared with the conventional translation microactuator shown in FIGS. 14 to 16, the applied voltage Va when the controllable maximum displacement is substantially the same is about 1 /.
It can be 2. In this way, the applied voltage can be lowered even if the maximum controllable displacement is made substantially the same.

FIG. 6 is a plan view showing a rotary microactuator according to the present invention, FIG. 7 is a front sectional view showing the rotary microactuator shown in FIG. 6, and FIG. 8 is a sectional view taken along line BB of FIG. As shown in the figure, an upper substrate 42 made of single crystal silicon is attached to a lower substrate 41 made of single crystal silicon, and a support beam (first
A rotary frame body (movable frame body) 45 is provided via a support beam 44 of the above, and a rotary body (movable body) 47 is provided to the rotary frame body 45 via a support beam (second support beam) 46. The base 43, the support beam 44, the rotary frame body 45, the support beam 46, and the rotary body 47 are integrally provided. Further, an upper electrode (second upper electrode) 48 is provided on the back surface of the rotating frame body 45, an upper electrode (first upper electrode) 49 is provided on the back surface of the rotating body 47, and an upper surface 50 of the lower substrate 41 is provided. The recess 51 is provided and the upper surface 50
A lower electrode (second lower electrode) 52 is provided on the
1 is provided with a lower electrode (first lower electrode) 53, and the lower electrodes 52 and 53 are located at positions corresponding to the upper electrodes 48 and 49, respectively.

In this rotary microactuator, when a voltage is applied between one of the upper electrode 48 and the lower electrode 52, for example, the lower electrode 52 on the right side of FIG. 7, the upper electrode 48 is attracted by electrostatic attraction. As shown in FIG. 9, the rotary frame body 45 and the rotary body 47 rotate with respect to the base portion 43 in the clockwise direction on the paper surface of FIG. 9. In this state, when a voltage is applied between one of the upper electrode 49 and one of the lower electrodes 53, that is, the lower electrode 53 on the right side of FIG.
Since 9 is attracted by electrostatic attraction, the rotating body 47 rotates clockwise with respect to the rotating frame body 45 as shown in FIG. Also, the upper electrodes 48, 49 and FIG.
When a voltage is applied between the lower electrodes 52 and 53 on the left side of the paper surface, the rotating body 47 rotates counterclockwise in FIG.

In such a rotary microactuator, the rotary frame 45 and the rotary body 47 can be rotated with respect to the base 43, and the rotary body 47 can be rotated with respect to the rotary frame 45. 48 and lower electrode 5
Without increasing the distance from 2, that is, the gap g,
Moreover, the controllable maximum rotation angle can be increased without increasing the applied voltage Vr. For example, the rotating body 4
The maximum controllable rotation angle of No. 7 is about 24 degrees, and the voltage applied between the upper electrode 48 and the lower electrode 52 and between the upper electrode 49 and the lower electrode 53 at this time is 95V. As described above, the controllable maximum rotation angle when the applied voltage Vr is the same can be approximately doubled as compared with the conventional rotary microactuator shown in FIGS. For this reason, it is difficult to coexist with the control circuit, and a circuit for preventing leakage, improving withstand voltage, and converting voltage becomes simple, and the size and cost are reduced. In particular, when the rotating body 47 is used as a micromirror, the rotation angle of the micromirror can be increased, and therefore, it is not necessary to lengthen the optical path in order to avoid interference between optical elements, so that the device can be downsized. it can. In addition, the upper surface 50 of the lower substrate 41
Since the concave portion 51 is provided in the concave portion 51 and the lower electrode 53 is provided in the concave portion 51, the rotating frame body 45 and the rotating body 4 are provided with respect to the base portion 43.
Since the distance between the upper electrode 49 and the lower electrode 53 when rotating 7 can be increased, the controllable maximum rotation angle of the rotating body 47 can be increased.

Further, in the rotary microactuator having the same structure as the rotary microactuator shown in FIGS. 6 to 8 and the gap g and the recess 51 having a depth of half,
The maximum controllable rotation angle of the rotating body 47 is about 12 degrees, and the voltage applied between the upper electrode 48 and the lower electrode 52 and between the upper electrode 49 and the lower electrode 53 is 43V. Thus, compared to the conventional rotary microactuator shown in FIGS. 18 to 20, the applied voltage Vr when the controllable maximum rotation angle is substantially the same can be reduced to about 1/2. In this way, the applied voltage can be lowered even if the maximum controllable displacement is made substantially the same.

FIG. 11 is a plan view showing another rotary microactuator according to the present invention, FIG. 12 is a sectional view taken along line CC of FIG. 11, and FIG. 13 is a sectional view taken along line DD of FIG. As shown in the figure, an upper substrate 62 made of single crystal silicon is attached to a lower substrate 61 made of single crystal silicon, and a rotating frame body is provided on a base portion 63 of the upper substrate 62 via a support beam (first support beam) 64. The (movable frame) 65 is provided, and the rotary frame 65 is provided.
Is provided with a rotary frame body (movable frame body) 67 via a support beam (first support beam) 66, and the rotary frame body (movable frame body) is supported via a support beam (first support beam) 68. A frame body 69 is provided, and a rotary body (movable body) 71 is provided on the rotary frame body 69 via a support beam (second support beam) 70. The base portion 63, the support beam 64, the rotary frame body 65, and the support body are provided. The beam 66, the rotary frame 67, the support beam 68, the rotary frame 69, the support beam 70, and the rotary body 71 are integrally provided. The direction of the center lines of the support beams 64 and 68 is the left-right direction (X-axis direction) of the paper surface of FIG. 11, and the direction of the center lines of the support beams 66 and 70 is the vertical direction of the paper surface (Y-axis direction) of FIG. The rotation center line of the rotating body 71 is plural, and the direction of the center lines of the support beams 64 and 68 and the support beam 6 are different.
The direction of the center line of 6, 70 is orthogonal. Further, an upper electrode (second upper electrode) is provided on the back surface of the rotating frame body 65, 67, 69.
72 to 74, an upper electrode (first upper electrode) 75 is provided on the back surface of the rotating body 71, a recess 77 is provided on the upper surface 76 of the lower substrate 61, and a lower electrode (second lower electrode) is provided on the upper surface 76. Electrodes) 78 and 79 are provided, a lower electrode (second lower electrode) 80 and a lower electrode (first lower electrode) 81 are provided in the recess 77, and the upper electrodes 72 to 75 are lower electrodes 78 to 81, respectively. It is located at the corresponding location.

In this rotary microactuator, when a voltage is applied between one of the upper electrode 72 and the lower electrode 78, the rotary frames 65, 67, 69 are moved relative to the base 63.
And the rotating body 71 rotates around the center line of the support beam 64. In this state, when a voltage is applied between one of the upper electrode 73 and one of the lower electrodes 79, the rotating frame bodies 67 and 69 and the rotating body 71 rotate about the center line of the support beam 66 with respect to the rotating frame body 65. To do. When a voltage is applied between the upper electrode 74 and one of the lower electrodes 80 in this state, the rotating frame body 69 and the rotating body 71 rotate with respect to the rotating frame body 67 about the center line of the support beam 68. When a voltage is applied between the upper electrode 75 and one of the lower electrodes 81 in this state, the rotating body 71 rotates about the center line of the support beam 70 with respect to the rotating frame body 69. Therefore, the rotating body 71 rotates about the X-axis direction and the Y-axis direction with respect to the base 63.

In such a rotary microactuator, the rotary frame bodies 65 and 69 and the rotary body 71 are rotated around the X-axis direction with respect to the base portion 63, and the rotary frame body 6 is rotated.
5, the rotary frame body 69 and the rotary body 71 can be rotated around the X-axis direction, and the rotary frame body 67 and the rotary body 71 can be rotated around the Y-axis direction with respect to the base 63,
Moreover, since the rotating body 71 can be rotated with respect to the rotating frame body 67 about the Y-axis direction, the applied voltage Vr can be increased without increasing the distance between the upper electrode 72 and the lower electrode 78, that is, the gap g. The maximum controllable rotation angle can be increased without doing so. For example, the controllable maximum rotation angle about the X-axis direction and the Y-axis direction of the rotating body 71 is about 24 degrees, and at this time, the upper electrodes 72 to 7
The voltage applied between the No. 5 and the lower electrodes 78 to 81 is 95V. As described above, the controllable maximum rotation angle when the applied voltage Vr is the same can be approximately doubled as compared with the conventional rotary microactuator shown in FIGS. For this reason, it is difficult to coexist with the control circuit, and a circuit for preventing leakage, improving withstand voltage, and converting voltage becomes simple, and the size and cost are reduced. Further, since the concave portion 77 is provided in the upper surface 76 of the lower substrate 61 and the lower electrodes 80 and 81 are provided in the concave portion 77, the rotary frame bodies 65 and 69 and the rotary body 71 are centered in the X axis direction with respect to the base portion 63. The upper electrode 7 when rotating and rotating the rotating frame 67 and the rotating body 71 with respect to the base 63 around the Y-axis direction
Since it is possible to increase the distance between the Nos. 4 and 75 and the lower electrodes 80 and 81, it is possible to further increase the controllable maximum rotation angle of the rotating body 71.

The structure similar to that of the rotary microactuator shown in FIGS. 11 to 13 has a gap g and a recess 7.
In the rotary microactuator having half the depth of 7, the maximum controllable rotation angle of the rotating body 71 is about 12 degrees, and at this time, the upper electrodes 72 to 75 and the lower electrodes 78 to 8 are formed.
The voltage applied between 1 and 43 is 43V. Thus, compared to the conventional rotary microactuator shown in FIGS. 18 to 20, the applied voltage Vr when the controllable maximum rotation angle is substantially the same can be reduced to about 1/2. In this way, the applied voltage can be lowered even if the maximum controllable displacement is made substantially the same.

In the above embodiment, the moving body 27 and the rotating bodies 47, 71 are formed in a square shape, but the movable body is formed in a polygonal shape such as a circle, an ellipse, a rectangle or a hexagon. Good. Further, in the above embodiment, the lower substrates 21, 41, 61 and the upper substrates 22, 42, 62 made of single crystal silicon are used, but the lower substrate and the upper substrate made of polymer may be used. In the above-described embodiment, the case where the movable body is the moving body 27 that moves downward or the rotating bodies 47 and 71 that rotate is described. However, when the movable body moves downward and rotates as well. The present invention can also be applied. Further, in the above-described embodiment, the movable frame body (movable frame body) 25 is provided on the base portion 23 of the upper substrate 22 via the support beam (first support beam) 24, and the support beam 26 is provided on the movable frame body 25. The moving body 27 is provided through the rotary frame body (movable frame body) 4 through the support beam (first support beam) 44 on the base portion 43 of the upper substrate 42.
5, the support beam (second support beam) 46 is provided on the rotary frame 45.
Although the rotating body 47 is provided via the above, the plurality of sets of the first support beam and the movable frame body are provided, the second upper electrode is provided in each of the plurality of movable frame bodies, and the plurality of second substrate of the lower substrate is provided. The second lower electrodes may be provided at the positions corresponding to the upper electrodes of (3 sets in FIG. 11, for example). In this case, if at least one recess is provided in the recess provided on the surface of the lower substrate on which the second lower electrode is provided, the controllable maximum movable range of the movable body can be further increased.

[0029]

In the microactuator according to the present invention, the movable frame and the movable body can be moved with respect to the base, and the movable body can be moved with respect to the movable frame, so that the applied voltage is not increased. The maximum controllable movable range can be increased.

Further, a plurality of sets of the first support beam and the movable frame body are provided, a second upper electrode is provided on each of the plurality of movable frame bodies, and corresponds to the plurality of second upper electrodes of the lower substrate. When the second lower electrodes are provided at the respective positions, the inner movable frame can be moved with respect to the outer movable frame, so that the controllable maximum movable range is increased without increasing the applied voltage. be able to.

Further, when the concave portion is provided on the surface of the lower substrate on which the second lower electrode is provided and the first lower electrode is provided in the concave portion, when the movable frame body and the movable body are moved with respect to the base portion. Since the distance between the first upper electrode and the first lower electrode can be increased, the controllable maximum movable range of the movable body can be increased.

[Brief description of drawings]

FIG. 1 is a plan view showing a translational microactuator according to the present invention.

FIG. 2 is a front cross-sectional view showing the translational microactuator shown in FIG.

3 is a cross-sectional view taken along the line AA of FIG.

FIG. 4 is an operation explanatory view of the translational microactuator shown in FIGS.

5 is an operation explanatory view of the translational microactuator shown in FIGS. 1 to 3. FIG.

FIG. 6 is a plan view showing a rotary microactuator according to the present invention.

7 is a front sectional view showing the rotary microactuator shown in FIG.

8 is a cross-sectional view taken along line BB of FIG.

9 is an operation explanatory view of the rotary microactuator shown in FIGS. 6 to 8. FIG.

FIG. 10 is an operation explanatory diagram of the rotary microactuator shown in FIGS. 6 to 8;

FIG. 11 is a plan view showing another rotary microactuator according to the present invention.

12 is a cross-sectional view taken along line CC of FIG.

13 is a cross-sectional view taken along the line DD of FIG.

FIG. 14 is a partially cutaway perspective view showing a conventional translation microactuator.

15 is a front cross-sectional view showing the translational microactuator shown in FIG.

16 is a cross-sectional view taken along line EE of FIG.

FIG. 17 is an operation explanatory diagram of the translational microactuator shown in FIGS. 14 to 16;

FIG. 18 is a plan view showing a conventional rotary microactuator.

19 is a front sectional view showing the rotary microactuator shown in FIG.

20 is a cross-sectional view taken along the line FF of FIG.

FIG. 21 is an operation explanatory view of the rotary microactuator shown in FIGS. 18 to 20.

22 is a graph showing the relationship between electrostatic attraction force Fe, spring elastic force Fm, and displacement y of the translational microactuator shown in FIGS. 14 to 16. FIG.

FIG. 23 is a graph showing the relationship between the applied voltage Va and the displacement y of the translational microactuator shown in FIGS.

[Explanation of symbols]

21 ... Lower substrate 22 ... Upper substrate 23 ... Base 24 ... Support beams 25 ... Moving frame 26 ... Support beams 27 ... Mobile 28, 29 ... Upper electrode 30 ... Top 31 ... Recess 32, 33 ... Lower electrode 41 ... Lower substrate 42 ... Upper substrate 43 ... Base 44 ... Support beam 45 ... Rotating frame 46 ... Support beam 47 ... Rotating body 48, 49 ... Upper electrode 50 ... Top 51 ... Recess 52, 53 ... Lower electrode 61 ... Lower substrate 62 ... Upper substrate 63 ... Base 64 ... Support beam 65 ... Rotating frame 66 ... Support beam 67 ... Rotating frame 68 ... Support beams 69 ... Rotating frame 70 ... Support beam 71 ... Rotating body 72-75 ... Upper electrode 76 ... Top 77 ... Recess 78-81 ... Lower electrode

   ─────────────────────────────────────────────────── ─── Continued front page    F term (reference) 2H041 AA14 AB14 AC06 AZ02 AZ03                       AZ08                 2H043 BB05 BC03 CB00 CD03 CD04                       CE00                 2H045 AB06 AB13 AB43 AB72

Claims (3)

[Claims] 1. An upper substrate is attached to a lower substrate, a movable body is provided on the upper substrate, a first upper electrode is provided on the movable body, and a first upper electrode is provided at a position corresponding to the first upper electrode on the lower substrate. In the microactuator having one lower electrode, a movable frame body is provided on the base of the upper substrate via a first support beam, and the movable body is provided on the movable frame body via a second support beam, A second upper electrode is provided on the movable frame,
A microactuator, wherein a second lower electrode is provided at a position corresponding to the second upper electrode on the lower substrate. 2. A plurality of sets of the first support beam and the movable frame body are provided, the second upper electrode is provided on each of the plurality of movable frame bodies, and the plurality of second frame electrodes of the lower substrate are provided. 2. The microactuator according to claim 1, wherein the second lower electrode is provided at a position corresponding to the upper electrode. 3. The micro according to claim 1, wherein a recess is provided in a surface of the lower substrate on which the second lower electrode is provided, and the first lower electrode is provided in the recess. Actuator.