JP2003110803A - Solid-state imaging apparatus and solid-state imaging system - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a solid-state imaging apparatus capable of acquiring the scan position information with no separate control system for precisely controlling a motor, a process system for acquiring a position signal, or a mechanism for detecting positional information. SOLUTION: There are provided a pixel 101 containing a plurality of pixels arrayed on a semiconductor substrate, and at least one monitor pixel 106 disposed on the semiconductor substrate away from the pixel 101 in a sub-scan direction.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a solid-state image pickup device and a solid-state image pickup system.

[0002]

2. Description of the Related Art One-dimensional sensors such as CCD linear sensors are widely used in image reading units of scanners and PPCs.

When scanning and reading an original with a one-dimensional sensor, it is necessary to obtain information from the sensor or the moving system of the original, or to provide an encoder to obtain information on the scanning position. Therefore, when scanning is performed by a mechanical system, a control system for precisely controlling a motor used for a moving system and a processing system for obtaining a position signal are separately required.

In the case of manual scanning, a mechanism such as an encoder is required separately.

[0005]

SUMMARY OF THE INVENTION The present invention has been made in view of the above circumstances, and its object is to detect a control system for precisely controlling a motor, a processing system for obtaining a position signal, or position information. An object of the present invention is to provide a solid-state imaging device and a solid-state imaging system that can acquire scanning position information without separately providing a mechanism for doing so.

Another object of the present invention is to provide a solid-state imaging device and a solid-state imaging system capable of suppressing deterioration of transfer efficiency even when the resolution is switched and the transfer speed of the charge transfer register section is increased. To do.

[0007]

In order to achieve the above object, in a first mode of a solid-state image pickup device according to the present invention, a pixel portion including a plurality of pixels arranged in a line on a semiconductor substrate, At least one or more monitor pixel units are arranged on the semiconductor substrate so as to be separated from the pixel unit in the sub-scanning direction.

A second solid-state image pickup device according to the present invention is also provided.
In the aspect, a pixel unit including a plurality of pixels arranged in a line on a semiconductor substrate, a first optical system for forming an image of the first imaging line on a part of the pixels of the pixel unit, and the first optical system. And a second optical system for forming an image of a second imaging line at a position apart from the imaging line in the sub-scanning direction on a pixel of another portion different from the pixel of the one portion.

In the first aspect of the solid-state imaging system according to the present invention, a pixel portion including a plurality of pixels arranged in a row on a semiconductor substrate, and the semiconductor substrate in the sub-scanning direction from the pixel portion. Comparing a solid-state imaging unit including at least one or more monitor pixel units arranged apart from each other, an output from the monitor pixel unit, and an output from a pixel of the pixel unit corresponding to the monitor pixel unit, Based on the comparison result, the solid-state imaging section and a signal processing section for detecting the relative speed between the solid-state imaging section and the object to be imaged to obtain scanning position information are provided.

In a second aspect of the solid-state image pickup system according to the present invention, a pixel portion including a plurality of pixels arranged in a line on a semiconductor substrate, and a first image pickup line is formed in a pixel of a part of the pixel portion. A first optical system for forming an image, a second image forming line for arranging a second imaging line at a position apart from the first imaging line in the sub-scanning direction on a pixel of another part different from the one part of the pixel. A solid-state image pickup unit including an optical system, an output from the pixel of the one portion, and an output from the pixel of the other portion are compared, based on the comparison result, the solid-state image pickup unit,
The solid-state imaging unit is provided with a signal processing unit that detects a relative speed with respect to the imaged object and obtains scanning position information.

In order to achieve the above-mentioned another object, in a third aspect of the solid-state image pickup device according to the present invention, one of the pixel portion including a plurality of pixels arranged in a row on a semiconductor substrate and the pixel portion. Side first read electrode, a second read electrode arranged on the other side of the pixel portion facing the one side, and a first charge transfer register arranged adjacent to the first read electrode. Section and the number of transfer stages per pixel arranged adjacent to the second readout electrode is the first
And a second charge transfer register unit which is smaller in number than the charge transfer register unit.

In a third aspect of the solid-state imaging system according to the present invention, a pixel portion including a plurality of pixels arranged in a line on a semiconductor substrate, and a first readout electrode arranged on one side of the pixel portion. A second read electrode arranged on the other side of the pixel section facing the one side, a first charge transfer register section arranged adjacent to the first read electrode, and adjacent to the second read electrode. And a solid-state imaging section including a second charge transfer register section having a smaller number of transfer stages per pixel than the first charge transfer register section, and the pixel section on the first readout electrode during a normal output operation. The control for applying the first read pulse for transferring the photo signal charge generated in step 1 to the first charge transfer register section, the low read operation, the photo signal charge generated in the pixel section is applied to the second read electrode. Note: A timing generator that performs control to give a second read pulse to be transferred to the second charge transfer register section and control to give the second read pulse once while the first read pulse is twice during the electronic shutter operation. And.

[0013]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below with reference to the drawings. In this description, common reference numerals are given to common portions throughout the drawings.

(First Embodiment) FIG. 1 shows a first embodiment of the present invention.
FIG. 3 is a plan view showing the solid-state imaging device according to the embodiment. Note that FIG. 1 shows, as an example, a CCD linear sensor used particularly in a reading unit such as a scanner.

As shown in FIG. 1, a pixel portion 101 including a plurality of photosensitive pixels (hereinafter, referred to as pixels) 107 is provided on a semiconductor substrate 100. Pixel unit 10 of the first embodiment
In particular, 1 has a plurality of pixels 107 arranged in a line, forming a so-called one-dimensional pixel line. Each of the pixels 107 is composed of, for example, a photodiode, and converts incident light energy, that is, light energy corresponding to a read image, into an optical signal charge and temporarily stores it. The optical signal charge accumulated in the pixel 107 is read out by the read electrode (shift gate) 102.
Through the charge transfer register section 103 at the same time. The charge transfer register unit 103 is composed of, for example, a CCD, and sequentially transfers the transferred optical signal charges to the output unit 104 with, for example, two-phase clock pulses. Output unit 10
Reference numeral 4 reads the transferred optical signal charges, converts them into output signals according to the amount of charges, and outputs them.

Further, the first embodiment has a monitor pixel 106 and a monitor pixel output section 105. The monitor pixel 106 is provided at a position apart from the pixel portion 101. In the first embodiment, the monitor pixel 106 is
As shown in FIG. 1, it is provided at a position separated from the pixel portion 101 by a distance “L” in the sub-scanning direction.

When the CCD linear sensor according to the first embodiment is moved in the sub-scanning direction or the object to be imaged is moved in the sub-scanning direction, and the signal is read at a constant time interval, the monitor pixel 106 is read. 2 and the output from the pixel 107-n at the location corresponding to the monitor pixel 106 are as shown in FIG.

As shown in FIG. 2, if there is relative movement between the CCD linear sensor and the object to be imaged, such as an original, the image formed on the pixel 107-n will pass a certain time. After that, an image is formed on the monitor pixel 106.

Therefore, by comparing the output pattern from the pixel 107-n with the output pattern from the monitor pixel 106, the time difference between these output patterns can be known. For example, as shown in FIG. 2, if the time difference "T1" or "T2" between output patterns is known, these time differences "T1"
From "T2" or "T2" and the distance "L", the relative speed between the CCD linear sensor and the image pickup object, that is, the moving speed of the CCD linear sensor or the moving speed of the image pickup object, for example, the document can be obtained. In this way, if the relative speed between the CCD linear sensor and the object to be imaged is known, it is possible to obtain movement information along the sub-scanning direction, that is, scanning position information during image scanning.

The process for acquiring the scanning position information can be performed using software, for example. An example of this software will be described below.

FIG. 3 is a flowchart showing an example of a processing procedure performed by software.

First, an output pattern from the pixel 107 and an output pattern from the monitor pixel 106 are obtained (ST.
1).

ST. A specific example of No. 1 is to read the output of the pixel 107-n and the output of the monitor pixel 106 for a certain period of time, and accumulate them in, for example, a storage unit provided in the solid-state imaging system. Thereby, for example, the output pattern as shown in FIG. 2 can be obtained.

Next, the output pattern from the pixel 107-n is compared with the output pattern from the monitor pixel 106,
The time difference "T" between these output patterns is obtained (ST.
2).

ST. A specific example of No. 2 is to perform pattern matching between the output pattern of the pixel 107-n at a certain fixed time and the output pattern of the monitor pixel 106 at a certain constant time, and obtain the time difference “T” between the matched patterns. is there.

As another example, the characteristic portion of the output pattern of the pixel 107-n and the characteristic portion of the output pattern of the monitor pixel 106 corresponding to this characteristic portion are extracted, To find the time difference "T" between these characteristic parts. An example of the characteristic part is an inflection point of the output level, for example, a peak of the output pattern as shown in FIG.

Next, when the time difference "T" between the output patterns is found, CC is calculated from the time difference "T" and the distance "L".
The relative speed between the D linear sensor and the imaged object is calculated (S
T. 3).

According to the CCD linear sensor of the first embodiment as described above, for example, a control system for precisely controlling a motor used for a moving system and a processing system for obtaining a position signal are not provided, and the CCD linear sensor can be used for image scanning. It becomes possible to acquire the scanning position information.

Further, even when applied to a device for manual scanning such as a handy scanner, it is possible to acquire the scanning position information without providing a mechanism for detecting the position information such as an encoder.

In the first embodiment, the comparison between the output patterns is performed for the monitor pixel 106 and one pixel 107-n at the position corresponding to the monitor pixel 106.

However, the comparison between the output patterns may be carried out by a plurality of monitor pixels 106, pixels 107-n, and pixels 107 around the pixels 107-n. In this case, not only the movement information in the direction orthogonal to the charge transfer direction but also the movement information in the oblique direction can be obtained.

(Second Embodiment) FIG. 4 shows a second embodiment of the present invention.
FIG. 3 is a plan view showing the solid-state imaging device according to the embodiment. Note that FIG. 4 shows, as an example, a CCD linear sensor used particularly in a reading unit such as a scanner.

As shown in FIG. 4, the monitor pixel 111 has
The charge transfer register unit 103 is provided on the opposite side of the pixel unit 101. In this case, the charges generated and accumulated in the monitor pixel 111 are stored in the charge transfer register unit 103.
The charge transfer register unit 103 is sandwiched by the read electrode 112 provided on the opposite side of the read electrode 102.
Moved to.

In the second embodiment as well, the monitor pixel 111 is provided at a position distant from the pixel portion 101, so that the monitor pixel 11 is provided as in the first embodiment.
By comparing the output pattern obtained from No. 1 with the output pattern obtained from the pixel 107-n located at the corresponding position and obtaining the time difference between these output patterns, C
It is possible to know the relative speed between the CD linear sensor and the object to be imaged.

Therefore, also in the second embodiment, the first
The same effect as the embodiment can be obtained.

Further, in the second embodiment, the output section of the monitor pixel 111 is shared with the output section 104 of the pixel section 101. Therefore, the monitor pixel output unit 105 is connected to the pixel unit 1
This is advantageous in reducing the size of the CCD linear sensor as compared with the first embodiment in which the output unit 104 of No. 01 is not shared.

(Third Embodiment) FIG. 5 shows a third embodiment of the present invention.
FIG. 3 is a plan view showing the solid-state imaging device according to the embodiment. It should be noted that FIG. 5 shows, as an example, a CCD linear sensor used particularly in a reading unit such as a scanner.

As shown in FIG. 5, the monitor pixel 106 and the monitor pixel output section 1 shown in the first embodiment.
In addition to 05, a monitor pixel 109 and a monitor pixel output unit 108 are further provided.

Similar to the monitor pixel 106, the monitor pixel 109 is provided at a position "L2" away from the pixel portion 101 in the direction orthogonal to the charge transfer direction. Distance "L
2 ″ is the distance between the monitor pixel 109 and the pixel 107-m at the corresponding position. The distance “L2” is preferably between the monitor pixel 106 and the pixel 107-n at the corresponding position. It is set equal to the distance "L1".

In the third embodiment as described above, similarly to the first and second embodiments, the output pattern obtained from the monitor pixel 106 and the output pattern obtained from the pixel 107-n are compared, and By comparing the output pattern obtained from the monitor pixel 109 and the image pattern obtained from the pixel 107-m located at the corresponding position, the time difference between these output patterns can be obtained. As a result, the relative speed between the CCD linear sensor and the object to be imaged can be known.

Therefore, also in the third embodiment, the same effect as in the first and second embodiments can be obtained.

Further, in the third embodiment, the monitor pixel 1
Comparing the time difference between the output pattern obtained from 06 and the output pattern obtained from the pixel 107-n, and the time difference between the output pattern obtained from the monitor pixel 109 and the image pattern obtained from the pixel 107-m. Then, there is an advantage that not only linear movement of the CCD linear sensor or the imaged object, that is, one-dimensional information but also two-dimensional information such as rotation of the CCD linear sensor or the imaged object can be obtained. .

(Fourth Embodiment) FIG. 6 shows a fourth embodiment of the present invention.
It is a perspective view showing a solid-state imaging device concerning an embodiment. Note that FIG. 6 shows, as an example, a CCD linear sensor used particularly in a reading unit such as a scanner.

As shown in FIG. 6, a pixel portion 101 including a plurality of pixels 107 is provided on the semiconductor substrate.
The pixel unit 101 of the fourth embodiment forms a one-dimensional pixel row, as in the first to third embodiments.

Further, in the fourth embodiment, the main optical system 12
0 and a monitor optical system 121.

The main optical system 120 is, for example, the main imaging line 1
The image of the imaged object 122 in 23 is a part of the pixels 107 included in the pixel portion 101, and the pixels 107-0 to 1
Image it at 07-m-1. The monitor optical system 121 forms an image of the imaged object 122 in the monitor imaging line 124 on another part of the pixel 107-m different from the part of the pixels 107-0 to 107-m-1. Let

The monitor image pickup line 124 is separated from the main image pickup line 123 by a distance "L" in the sub-scanning direction. This allows the pixel 107-m to function in the same manner as the monitor pixels 106 and 109 described in the first to third embodiments. Examples of the main optical system and the monitor optical system include a normal optical lens in the lens reduction type CCD linear sensor and a rod lens in the contact type CCD linear sensor.

The CCD linear sensor according to the fourth embodiment as described above is moved in the sub-scanning direction or the object 122 to be imaged.
Is moved in the sub-scanning direction and a signal is read at a constant time interval, the output of the pixel 107-m and the pixel 107-m
The relationship with the output of -n is the same as that shown in FIG. Note that the pixel 107-n is a pixel on which an image of a line 125 corresponding to the monitor imaging line 124 of the main imaging line is formed.

Therefore, also in the fourth embodiment, the first
The same effect as the embodiment can be obtained.

Further, in the fourth embodiment, as compared with the first to third embodiments, it is not necessary to provide a monitor pixel separately from the pixel section 101, and a monitor pixel output section is not provided. This is advantageous for downsizing the CCD linear sensor.

(Fifth Embodiment) The present fifth embodiment relates to an example of a solid-state imaging system using the solid-state imaging device described in the first to fourth embodiments.

FIG. 7 is a block diagram showing a solid-state image pickup system according to the fifth embodiment of the present invention.

As shown in FIG. 7, on the circuit board 150, the solid-state image pickup section 151 and the timing generator (T
G) 152, digital signal processor (DSP) 1
53, memory 154, and interface (I / F)
155 etc. are arranged.

The solid-state image pickup unit 151 is a solid-state image pickup device such as a CCD linear sensor. In this example, the CCD linear sensor according to the first embodiment is used. Of course, it is also possible to use the CCD linear sensor according to the second to fourth embodiments.

The TG 152 generates various timing signals used for controlling the solid-state image pickup unit 151 such as a read pulse and a transfer clock, or signals for deciding those timings, and gives them to the solid-state image pickup unit 151.

The DSP 153 outputs the output signal from the solid-state image pickup unit 151 to, for example, a scanner, a PPC, a facsimile,
A signal according to a desired electronic device such as a bar code reader or a signal according to a desired signal processing method is converted and output.

Furthermore, the DSP 153 of the fifth embodiment is
From the output signal from the solid-state imaging unit 151, the monitor pixel 10
The output signal from the pixel 6 and the output signal from the pixel 107-n are extracted, signal calculation is performed based on the processing described with reference to FIG. 2, for example, and the solid-state imaging unit 151 and the imaging target The relative speed between them is detected, and a signal indicating the scanning position information is obtained and output.

The memory 154 is used for storing image information, and in the fifth embodiment, the monitor pixel 106 is used for storing a software program for acquiring scanning position information and obtaining an output pattern. Is used for temporary storage of the output signal from the pixel 107-n and the output signal from the pixel 107-n.

The I / F 155 is an interface between the solid-state imaging system according to the fifth embodiment and the electronic equipment to which the solid-state imaging system is connected, and is attached as necessary.

As described above, the solid-state image pickup devices according to the first to fourth embodiments are mounted on the solid-state image pickup system as described in the fifth embodiment, so that, for example, a scanner, a P
It can be used for various electronic devices with an image reading function such as a PC, a facsimile, and a barcode reader.

The solid-state image pickup system described in the fifth embodiment is an example, and the solid-state image pickup system according to the first embodiment of the present invention may be used.
The solid-state imaging device according to the fourth embodiment can of course be mounted on a solid-state imaging system other than that shown in FIG.

As described above, according to the solid-state image pickup devices according to the first to fourth embodiments and the solid-state image pickup system according to the fifth embodiment, the monitor pixel is located at a position "L" away from the pixel portion in the sub-scanning direction. The scanning position at the time of image scanning is provided by forming an image of the monitor imaging line at a position “L” away from the main imaging line in the sub scanning direction together with the image in the main imaging line. Information can be obtained by signal calculation.

In such a solid-state image pickup device and solid-state image pickup system, for example, a control system for precisely controlling a motor used in a moving system and a processing system for obtaining a position signal are unnecessary.

Further, even when applied to a device for manual scanning such as a handy scanner, a mechanism for detecting position information such as an encoder becomes unnecessary.

(Sixth Embodiment) The sixth embodiment relates to a solid-state image pickup device whose resolution can be switched.

In the normal output of the solid-state image pickup device, all the optical signal charges from all the pixels included in the pixel portion are independently output. However, depending on the application, for example, one signal is output for every two pixels. Low resolution output may be performed. In the output signal processing, if the signals are thinned out every other pixel, for example, the resolution is halved, but if the transfer speed of the charge transfer register section is the same, the time required for the entire charge transfer does not change.

On the other hand, in the case of low resolution output, a high speed operation which shortens the time required for the entire charge transfer is often required as compared with the case of normal output.

In the current solid-state image pickup device, in order to perform a high-speed operation commensurate with a low resolution, the transfer speed of the charge transfer register section has to be doubled, for example, and the transfer efficiency is deteriorated. there is a possibility.

The sixth embodiment intends to provide a solid-state image pickup device capable of suppressing the deterioration of the transfer efficiency even when the resolution is switched and the transfer speed of the charge transfer register section is doubled, for example. To do.

FIG. 8A and FIG. 8B respectively show a sixth aspect of the present invention.
FIG. 3 is a plan view showing the solid-state imaging device according to the embodiment. Note that FIGS. 8A and 8B show, as one configuration example, a CCD linear sensor used particularly for a reading unit such as a scanner. Further, FIG. 8A shows a state of transfer of optical signal charges during a normal output operation, and FIG. 8B shows a state of transfer of optical signal charges during a low resolution output operation.

As shown in FIGS. 8A and 8B, a pixel portion 201 including a pixel 208 is provided on the semiconductor substrate 200. In the pixel portion 201 of the sixth embodiment, in particular, a plurality of pixels 208 are arranged in one row, forming a so-called one-dimensional pixel row. Each of the pixels 208 is composed of, for example, a photodiode, converts the incident light energy, that is, the light energy corresponding to the read image, into an optical signal charge and temporarily stores it.

On one side of the pixel section 201 along the charge transfer direction, the first read electrode 202 and the first charge transfer register section 2 adjacent to the first read electrode 202 are provided.
03 are arranged respectively. The first charge transfer register unit 203 is connected to the first output unit 204.

A second read electrode 205 and a second charge transfer register section 206 adjacent to the second read electrode 205 are provided on the opposite side of the pixel section 201 from the first read electrode 202. It is arranged. The second charge transfer register unit 206 is connected to the second output unit 207.

In the sixth embodiment, the number of transfer stages per pixel of the second charge transfer register unit 206 is smaller than that of the first charge transfer register unit 206. Particularly, in the fourth embodiment, the number of transfer stages per pixel of the first charge transfer register unit 203 is an integral multiple of the second charge transfer register unit 206, for example, twice.

Next, an operation example of the solid-state image pickup device according to the sixth embodiment will be described.

<Normal Output Operation> FIG. 9A is a signal waveform diagram showing a read pulse during a normal output operation of the solid-state imaging device according to the sixth embodiment of the present invention.

As shown in FIG. 9A, the read pulse SH1 is applied to the first read electrode 202 during the normal output operation. Further, the read pulse SH2 applied to the second read electrode 205 is, for example, “LO” during the normal output operation.
Try to keep W level.

When the read pulse SH1 transits from the "LOW" level to the "HIGH" level, the first read electrode 2
A shift gate having 02 as a gate electrode opens. As a result, as shown in FIG. 8A, the optical signal charges accumulated in each pixel 208 are simultaneously transferred to the first charge transfer register unit 203 through the first readout electrode 202.

When the read pulse SH1 transits from the "HIGH" level to the "LOW" level again, the shift gate having the first read electrode 202 as the gate electrode is closed. As a result, the electric charge generated in each pixel 208 is accumulated in each pixel 208 according to the incident light. For the accumulation of optical signal charge, the read pulse SH1 is "HIGH" again.
It goes to the level and continues until the optical signal charges are transferred to the first charge transfer register unit 203. In this example, while the optical signal charges are being accumulated (during the optical signal accumulating time), all the optical signal charges previously transferred to the first charge transfer register unit 203 are transferred to the output unit 204, and It is converted into an output signal according to the amount of charge and output.

<Low Resolution Output Operation> FIG. 9B is a signal waveform diagram showing a read pulse during a low resolution output operation of the solid-state imaging device according to the sixth embodiment of the present invention.

As shown in FIG. 9B, during the low resolution output operation, the read pulse SH2 is applied to the second read electrode 20.
Give to 5. The read pulse SH1 is kept at, for example, "LOW" level during the low resolution output operation.

When the read pulse SH2 transits from the "LOW" level to the "HIGH" level, the second read electrode 2
The shift gate having 05 as a gate electrode opens. As a result, as shown in FIG. 8B, the optical signal charges accumulated in each pixel 208 are simultaneously transferred to the second charge transfer register unit 206 through the second read electrode 205. At this time, in the sixth embodiment, the charges of the optical signals of two pixels are transferred to one transfer stage of the second charge transfer register unit 206 so as to be mixed.

When the read pulse SH2 transits from the "HIGH" level to the "LOW" level again, the shift gate having the second read electrode 205 as the gate electrode is closed. As a result, the charge generated according to the incident light is accumulated in each of the pixels 208, as in the normal operation output. When the read pulse SH2 is again set to "HIG
It goes to the H ″ level and continues until the optical signal charge is transferred to the second charge transfer register unit 206. In this example, during the optical signal accumulation time, it is transferred to the second charge transfer register unit 206 first. All the optical signal charges are transferred to the output unit 207, converted into an output signal according to the amount of the charges, and output.At this time, the number of transfer stages of the second charge transfer register unit 206 is as described above. First charge transfer register unit 203
Is half of. Therefore, even if the transfer speed is the same as that at the time of normal operation output, the entire transfer time can be halved. Therefore, as shown in FIG. 9B, the output operation can be performed at a higher speed than the normal output operation shown in FIG. 9A.

Further, in the sixth embodiment, since the optical signal charges for two pixels are added in particular, the sensitivity becomes high even if the resolution is low.

Further, as shown in FIGS. 8A and 8B, in the sixth embodiment, the number of transfer stages of the second charge transfer register unit 206 is smaller than the number of transfer stages of the first charge transfer register unit 203. Therefore, the area per transfer stage of the second charge transfer register unit 206 can be made larger than the area per transfer stage of the first charge transfer register unit 203. In this case, since the register area of the second charge transfer register unit 206 can be increased, there is an advantage that the saturation output of the second charge transfer register unit 206 becomes high.

(Seventh Embodiment) The seventh embodiment relates to an example of a solid-state imaging system using the solid-state imaging device described in the sixth embodiment.

FIG. 10 is a block diagram showing a solid-state imaging system according to the seventh embodiment of the present invention.

As shown in FIG. 10, on the circuit board 250, the solid-state image pickup section 251 and the timing generator (T
G) 252, digital signal processor (DSP) 2
53, etc. are arranged.

The solid-state image pickup unit 251 is a solid-state image pickup device such as a CCD linear sensor. In this example, the CCD linear sensor according to the sixth embodiment is used.

The TG 252 generates various timing signals used for controlling the solid-state image pickup unit 251, such as the read pulses SH1 and SH2 and the transfer clock, or signals for determining their timing, and the solid-state image pickup unit. Give to 251.

The DSP 253 outputs the output signal from the solid-state image pickup unit 251 to, for example, a scanner, a PPC, a facsimile,
A signal according to a desired electronic device such as a bar code reader or a signal according to a desired signal processing method is converted and output.

Whether the solid-state image pickup unit 251 is to perform the normal output operation or the low resolution output operation is determined by, for example, the signal RS.
Determined by W. In the fourth embodiment, the signal RSW
Is input to the TG 252, for example. When the signal RSW indicates the normal resolution (normal output operation), the TG 252 controls so that the read pulses SH1 and SH2 are generated at the timings shown in FIG. 9A. Also,
When the signal RSW indicates low resolution (low resolution output operation), the TG 252 reads out the read pulses SH1 and SH, for example.
2 is generated at the timing shown in FIG. 9B.

As described above, the solid-state image pickup device according to the sixth embodiment described above is mounted on the solid-state image pickup system as described in the seventh embodiment so that, for example, a scanner,
A variety of PPCs, facsimiles, bar code readers, etc.
It can be used for electronic devices with an image reading function.

Furthermore, the solid-state image pickup system according to the seventh embodiment has an electronic shutter function. Whether to use the electronic shutter function is determined by, for example, the signal ES. In this example, the signal ES is input to the TG 252.

By the way, when the electronic shutter operation is performed, a drain for sweeping away unnecessary charges is required. The solid-state imaging device described in the sixth embodiment has the second charge transfer register unit 206 in addition to the first charge transfer register unit 203. Therefore, the second charge transfer register unit 206 is used as a drain for sweeping away unnecessary optical signal charges.

An example of the electronic shutter operation will be described below.

<Electronic Shutter Operation> FIG. 11 is a signal waveform diagram showing a read pulse during the electronic shutter operation of the solid-state imaging system according to the seventh embodiment of the present invention.

As shown in FIG. 11, during the electronic shutter operation, the read pulse SH2 is once set to the "HIGH" level while the read pulse SH1 is set to the "HIGH" level twice. As a result, the optical signal charge accumulated after the read pulse SH1 transits from the "HIGH" level to the "LOW" level is read from the "LOW" level to the "H" level by the read pulse SH2.
The transition to the “IGH” level transfers the charges to the second charge transfer register unit 206. The transferred optical signal charges are swept away as unnecessary charges.

When the read pulse SH2 transits from the "HIGH" level to the "LOW" level, the second read electrode 2
The shift gate whose gate electrode is 05 is closed. At this time, since the read pulse SH1 is at the “LOW” level, the shift gate having the first read electrode 202 as the gate electrode is also closed. As a result, charges generated according to the incident light are accumulated again in each of the pixels 208. The accumulation of the optical signal charges continues until the read pulse SH1 transits to the “HIGH” level again and the optical signal charges are transferred to the first charge transfer register unit 203. All the optical signal charges previously transferred to the first charge transfer register unit 203 are transferred to the output unit 204 by the time the read pulse SH1 becomes the “HIGH” level again, and the output signal according to the amount of the charges. Is converted to and output.

In order to sweep away the unnecessary charges transferred to the second charge transfer register unit 206, for example, as shown in FIG. 10, the output unit 2 of the second charge transfer register unit 206 is used.
07 by using the changeover switch 254.
50 from the output signal line 255 to the ground potential line 2
Switch to 56 and connect. As a result, the unnecessary charges are transferred to the second charge transfer register unit 206 and eventually swept to the ground potential GND. The changeover switch 254 is provided in the semiconductor substrate 200. The changeover switch 254 controls the signal S output from the TG 252.
Based on W, the output unit 207 is connected to the ground potential line 256 during the electronic shutter operation, and the output unit 207 is connected to the output signal line 255 during the low resolution operation, for example.

This example is an example, and the sweep-out destination of the unnecessary charges may be, for example, a wiring connected to the ground potential GND, and is not limited to the ground potential line on the circuit board 250. Further, although the unnecessary charges transferred to the second charge transfer register unit 206 are transferred to, for example, the output unit 207, the unnecessary charges may be swept away before reaching the output unit 207. Furthermore, the unnecessary charges are not transferred, and the second charge transfer register unit 206 is used to transfer the unnecessary charges to the semiconductor substrate 200, for example.
You may make it sweep out inside.

In this way, the second charge transfer register unit 2
06 can be used not only during low resolution operation, but also as a drain for sweeping away unnecessary optical signal charges during electronic shutter operation. Thereby, the electronic shutter operation can be easily realized.

The signal accumulation time in the pixel 208 is changed by changing the generation timing of the read pulse SH2.
It can be adjusted.

The solid-state image pickup system described in the seventh embodiment is an example, and the solid-state image pickup device according to the sixth embodiment of the present invention is mounted in a solid-state image pickup system other than that shown in FIG. Of course, it is possible.

(Eighth Embodiment) FIG. 12 is a plan view showing a solid-state image pickup device according to an eighth embodiment of the present invention.

As shown in FIG. 12, in the eighth embodiment,
For example, the solid-state imaging device described in the sixth embodiment is
This is a 3-line color CCD linear sensor.

The pixel portion 201R is green (G) and the pixel portion 2
01B corresponds to blue (B), and the pixel portion 201R corresponds to red (R).

As shown in the eighth embodiment, the solid-state image pickup device according to the sixth embodiment can be adapted to color image pickup and can also be used for a color PPC, a color scanner and the like.

The present invention has been described above with reference to the first to eighth embodiments, but the present invention is not limited to each of these embodiments, and various modifications can be made in the implementation without departing from the gist of the invention. It can be transformed into

Further, although each of the above-described first to eighth embodiments can be carried out independently, it is of course possible to carry out in combination as appropriate.

Further, the first to eighth embodiments include inventions at various stages, and inventions at various stages are extracted by appropriately combining a plurality of constituent elements disclosed in each embodiment. It is also possible to do so.

[0112]

As described above, according to the present invention, scanning is performed without separately providing a control system for precisely controlling a motor, a processing system for obtaining a position signal, or a mechanism for detecting position information. A solid-state imaging device and a solid-state imaging system capable of acquiring position information can be provided.

Further, it is possible to provide the solid-state imaging device and the solid-state imaging system capable of suppressing the deterioration of the transfer efficiency even when the resolution is switched and the transfer speed of the charge transfer register section is increased.

[Brief description of drawings]

FIG. 1 is a plan view showing a solid-state imaging device according to a first embodiment of the present invention.

FIG. 2 is a diagram showing a relationship between an output of a monitor pixel and an output from a pixel corresponding to the monitor pixel.

FIG. 3 is a flowchart showing an example of a processing procedure performed by software.

FIG. 4 is a plan view showing a solid-state imaging device according to a second embodiment of the present invention.

FIG. 5 is a plan view showing a solid-state imaging device according to a third embodiment of the present invention.

FIG. 6 is a perspective view showing a solid-state imaging device according to a fourth embodiment of the present invention.

FIG. 7 is a block diagram showing a solid-state imaging system according to a fifth embodiment of the present invention.

8A and 8B are plan views showing a solid-state imaging device according to a sixth embodiment of the present invention.

FIG. 9A is a signal waveform diagram showing a read pulse during a normal output operation of the solid-state imaging device according to the sixth embodiment of the present invention, and FIG. 9B is a low-level diagram of the solid-state imaging device according to the sixth embodiment of the present invention. The signal waveform diagram which shows the read-out pulse at the time of a resolution output operation.

FIG. 10 is a block diagram showing a solid-state imaging system according to a seventh embodiment of the present invention.

FIG. 11 is a signal waveform diagram showing a read pulse during an electronic shutter operation of the solid-state imaging system according to the seventh embodiment of the present invention.

FIG. 12 is a plan view showing a solid-state imaging device according to an eighth embodiment of the present invention.

[Explanation of symbols]

100 ... Semiconductor substrate, 101 ... Pixel part, 102 ... Readout electrode (shift gate), 103 ... Charge transfer register part, 104 ... Output part, 105 ... Monitor pixel output part, 106 ... Monitor pixel, 107 ... Pixel, 108 ... Monitor pixel output unit, 109 ... Monitor pixel, 120 ... Main optical system, 121 ... Monitor optical system, 122 ... Imaged object, 123 ... Main imaging line, 124 ... Monitor imaging line, 125 ... Main imaging line, A line corresponding to the monitor imaging line, 150 ... Circuit board, 151 ... Solid-state imaging section, 152 ... Timing generator, 153 ... Digital signal processor, 154 ... Memory, 155 ... Interface, 200 ... Semiconductor substrate, 201 ... Pixel section, 202 ... first read-out electrode, 203 ... first charge transfer register section, 204 Output unit, 205 ... Second readout electrode, 206 ... Second charge transfer register unit, 207 ... Output unit, 208 ... Pixel, 250 ... Circuit board, 251 ... Solid-state imaging unit, 252 ... Timing generator, 253 ... Digital signal Processor, 254 ... Changeover switch, 255 ... Output wiring, 256 ... Ground potential line.

   ─────────────────────────────────────────────────── ─── Continued front page    (72) Inventor Kenichi Tokumitsu             1st Komukai Toshiba-cho, Sachi-ku, Kawasaki-shi, Kanagawa             Ceremony Company Toshiba Microelectronics Sen             Inside F term (reference) 4M118 AA10 AB01 AB03 AB10 BA10                       CA02 DA15 FA03 FA08 FA21                       GC08 GD02 HA20 HA22                 5C024 AX01 CX54 EX01 GX03 GY11                       GZ01 HX15 JX05                 5C051 AA01 BA02 DA03 DB01 DC02                       EA00 FA01

Claims (11)

[Claims] 1. A pixel portion including a plurality of pixels arranged in a line on a semiconductor substrate, and at least one monitor pixel portion arranged on the semiconductor substrate away from the pixel portion in a sub-scanning direction. And a solid-state image pickup device. 2. An output unit for converting the optical signal charge generated in the pixel unit into an output signal and outputting the output signal, and an output unit for converting the optical signal charge generated in the monitor pixel unit into an output signal and outputting the output signal. 2. The solid-state imaging device according to claim 1, wherein and are shared with each other. 3. A pixel unit including a plurality of pixels arranged in a line on a semiconductor substrate, a first optical system for forming an image of a first imaging line on a pixel of a part of the pixel unit, A second optical system for forming an image of a second imaging line at a position apart from the first imaging line in the sub-scanning direction on a pixel of another portion different from the pixel of the one portion. Solid-state imaging device. 4. A pixel unit including a plurality of pixels arranged in a line on a semiconductor substrate, and at least one monitor pixel unit arranged on the semiconductor substrate away from the pixel unit in the sub-scanning direction. A solid-state image pickup section including, an output from the monitor pixel section, and an output from a pixel corresponding to the monitor pixel section in the pixel section, and based on the comparison result, the solid-state image pickup section, A solid-state imaging system, comprising: a signal processing unit that detects a relative speed between the solid-state imaging unit and an object to be imaged and obtains scanning position information. 5. A pixel portion including a plurality of pixels arranged in a line on a semiconductor substrate, a first optical system for forming an image of a first imaging line on a part of pixels of the pixel portion, and the first optical system. A solid-state image pickup unit including a second optical system for forming an image of a second image pickup line at a position apart from the image pickup line in the sub-scanning direction on a pixel of another portion different from the pixel of the one portion; From the pixel of the other portion, and detects the relative speed between the solid-state imaging unit and the imaged object imaged by the solid-state imaging unit based on the comparison result. And a signal processing unit that obtains scanning position information. 6. A pixel portion including a plurality of pixels arranged in a line on a semiconductor substrate, a first readout electrode arranged on one side of the pixel portion, and a pixel portion facing the one side. A second read electrode arranged on the other side, a first charge transfer register section arranged adjacent to the first read electrode, and a transfer per pixel arranged adjacent to the second read electrode. 2. A solid-state imaging device, comprising: a second charge transfer register section having a smaller number of stages than the first charge transfer register section. 7. The number of transfer stages per pixel of the first charge transfer register unit is an integral multiple of the number of transfer stages per pixel of the second charge transfer register unit. Solid-state imaging device. 8. In a normal output operation, the photo signal charges generated in the pixel section are transferred to the first charge transfer register section through the first read electrode, and during the low resolution operation, through the second read electrode. 7. The solid-state imaging device according to claim 6, wherein the optical signal charges generated in the pixel unit are transferred to the second charge transfer register unit. 9. The solid-state imaging device according to claim 6, wherein the second charge transfer register section is used as a drain for sweeping away unnecessary optical signal charges during an electronic shutter operation. 10. The solid-state imaging device according to claim 6, wherein the pixel unit includes a plurality of pixel columns. 11. A pixel portion including a plurality of pixels arranged in a row on a semiconductor substrate, a first readout electrode arranged on one side of the pixel portion, and the other side of the pixel portion facing the one side. A second read electrode arranged on the first read electrode, a first charge transfer register section arranged adjacent to the first read electrode,
And a solid-state imaging unit that is disposed adjacent to the second readout electrode and includes a second charge transfer register unit that has a smaller number of transfer stages per pixel than the first charge transfer register unit; Control for giving a first read-out pulse to the first read-out electrode for transferring the optical signal charges generated in the pixel section to the first charge transfer register section. In the control of giving a second read pulse for transferring the optical signal charges generated in step 2 to the second charge transfer register section, and during the electronic shutter operation, the second read pulse is supplied while the first read pulse is twice. A solid-state imaging system, comprising: a timing generator that performs control once.