JP2003110163A - Magnetoresistance effect device, its manufacturing method, and magnetic recording/regenerative apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a magnetoresistance effect device capable of being manufactured with good yield by securely specifying an electric power supply region. SOLUTION: There are provided a magnetoresistance effect film (20) having one principal surface, a first insulating layer (25) which is directly laminated only on the one principal surface and including an opening (H) for selectively exposing part of the one principal surface, an electrically conductive magnetic substance layer (30) which partly extends on the first insulating layer excepting the opening and provides a magnetic bias to part of the magnetoresistance effect film from a portion chiefly different from the one principal surface, a second insulating layer (40) formed on the first insulating layer and the electrically conductive magnetic substance layer excepting the opening, and a pair of electrodes (50, 60) for conducting a current substantially perpendicularly to the one principal surface of the magnetoresistance effect film. One (50) of the pair of the electrodes is characterized in that a contact portion thereof with the magnetoresistance effect film is specified by the opening in the first insulating layer.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a magnetoresistive effect element, a method of manufacturing the same, and a magnetic recording / reproducing apparatus, and more particularly, a magnetoresistive effect element which can handle high output and high density magnetism and can be manufactured with high yield, and a manufacturing method thereof. The present invention relates to a magnetic recording / reproducing device equipped with the magnetoresistive effect element.

[0002]

2. Description of the Related Art In recent years, magnetic recording densities in hard disk drives have sharply increased, and along with this, the required reproduction output per unit track width has also sharply increased. 100 Gbits per square inch (100 Gbp
In the era of si), the required value of the reproduction output per track width is expected to be extremely high at 10 mV or more.

In response to this high output requirement, TMR (Tunnel
ing Magneto-Resistance) element and CPP-GMR (Curr
ent-Perpendicular-to-Plane Giant MagnetoResistance
A reproducing element, such as an effect element, which allows a sense current to flow in a direction perpendicular to the film stack interface has been proposed.

When supplying a sense current supply to these vertical energization type sensors, the electrodes in the upper and lower sides of the element are provided to define the energization area, thereby defining the sensitivity in the track width direction. However, since the magnetization on the medium becomes smaller as the magnetic recording density becomes higher, the area for regulating the current flow in the reproducing element is about 10 when the recording density is 200 Gbpsi class.
It is expected to be extremely small as 0 nm. Therefore,
There is a need for a structure and a manufacturing process that can reliably define such a minute current-carrying region.

On the other hand, since the era of the in-plane energization method, the reproducing element manufacturing method has been using the "Abutted Junction (AJ) process" for the reason of its process simplicity. However, it is desirable to adopt the AJ process because the process is still simple.

The "AJ process" means that the mask for patterning the magnetoresistive effect film is left as it is after the step of patterning the magnetoresistive effect film, and the bias film and the electrode film are formed on the mask. Then, it means a method of removing the patterning mask.

FIG. 12 is a schematic view showing a cross-sectional structure obtained by applying a conventional AJ process to a vertical conduction type GMR element.

Explaining the structure of the figure, the lower insulating layer 1
A magnetoresistive effect film 120 is formed by patterning on 10 and bias films 130 and 13 are sandwiched so as to sandwich both sides thereof.
0, and insulating layers 140 and 140 are laminated on the insulating layer 140. Then, the upper electrode 142 has the insulating layers 140, 1
It is formed so as to be connected to the magnetoresistive effect film 120 through 40 openings. A lower electrode 144 is connected to the lower side of the magnetoresistive film 120. That is, in the case of this structure, the openings of the insulating layers 140, 140 are defined as the “current-carrying region”.

Further, the magnetoresistive film 120 is, for example,
A so-called "spin valve structure" in which a magnetization fixed layer (pin layer), a non-magnetic intermediate layer (spacer layer), and a magnetization free layer (free layer) are stacked in this order can be used.

In such a vertical conduction type element, as described in Japanese Patent Laid-Open No. 2000-228002, the electrode 142 is not directly laminated on the bias film 130, but instead the insulating film is formed. 140 is provided.
Alternatively, the bias film 130 itself needs to be formed of a material having high electric resistance. Also, in general, the bias film 13
As the material of 0, a hard magnetic metal (hard magnet) such as a cobalt platinum (CoPt) alloy is used.

In the vicinity of the contact portion between the magnetoresistive effect film 120 and the hard magnet bias film 130, the free layer of the magnetoresistive effect film 120 may be strongly biased and its magnetic permeability may be extremely reduced. In order to prevent this, the current-carrying region is formed on the side surface of the hard magnet bias film 13.
It is necessary to have a “lead overlayed structure” that is concentrated in a place apart from 0 to some extent.

In the case of the AJ process described above, when a mask having an overhang is used as a patterning mask, a high resistance material and an insulating film are formed around the end portion of the upper surface of the reproducing element. As shown in FIG. 12, it is possible to form an overlaid structure by controlling the overlapping distance W.

[0013]

However, the film quality is poor in the vicinity of the edge E at the tip of the insulating layer 140 formed so as to wrap around on the magnetoresistive film 120 in this manner, and various types such as pinholes are included. There are more defects than in the flat part. As a result, even if the edge E of the insulating film 140 is apparently formed at a controlled distance from the upper surface end of the magnetoresistive film 120, the current I passes through a defect such as a pinhole existing near the edge E. Leaks and the electrode 142
A short circuit will occur between the magnetoresistive film 120 and the magnetoresistive film 120.
As a result, there arises a problem that the actual energization region to the magnetoresistive film 120 is wider than the opening.

The present invention has been made on the basis of the recognition of such a problem, and an object of the present invention is to cope with a high recording density by surely defining an energization area.
Moreover, it is an object of the present invention to provide a magnetoresistive element that can be manufactured with a high yield, a manufacturing method thereof, and a magnetic recording / reproducing apparatus.

In order to achieve the above object, a magnetoresistive effect element of the present invention is formed by directly laminating a magnetoresistive effect film having one main surface and only one main surface of the magnetoresistive effect film. A first insulating layer having an opening for selectively exposing a part of the one main surface, and the first insulating layer excluding the opening.
And a conductive magnetic layer that partially extends on the insulating layer and applies a magnetic bias to a part of the magnetoresistive film mainly from a portion different from the one main surface, and the opening is excluded. A second insulating layer formed on the first insulating layer and the conductive magnetic layer, and a pair of electrodes for passing a current in a direction substantially perpendicular to the film main surface of the magnetoresistive film. And
One of the pair of electrodes is characterized in that a contact portion with the magnetoresistive film is defined by the opening of the first insulating layer.

According to the above structure, since the periphery of the opening is covered with the current block structure having the double insulating structure composed of the first and second insulating layers, the electrically reliable insulation is maintained. You can As a result, the current-carrying region can be accurately defined by the opening, and it is possible to obtain a magnetoresistive effect element which can cope with high recording density and which has a stable output yield.

Here, if the current block structure has a magnetic layer between the first insulating layer and the second insulating layer, a conventional abut junction process is applied. The structure of the present invention can be reliably formed.

Further, the layer thickness of the first insulating layer is substantially constant on the main surface of the magnetoresistive effect film, and the layer thickness of the second insulating layer is made thinner toward the opening. With such a structure, the first insulating layer can be formed without wraparound, a dense and good film quality can be provided, and current leakage can be reliably prevented.

The material of the first insulating layer and the second material
If the material of the insulating layer is different from the above, the selective etching of these materials is easy and the manufacturing is easy.

On the other hand, in the method of manufacturing a magnetoresistive effect element according to the present invention, a step of forming a magnetoresistive effect film, a step of forming a first insulating layer on the magnetoresistive effect film, and the first step.
A step of forming a mask having an overhang on the insulating layer, and a step of etching the first insulating layer and the magnetoresistive film to form a pattern reflecting the outer edge shape of the mask overhang. Forming a magnetic material layer around the patterned magnetoresistive film by depositing a magnetic material and allowing the magnetic material to wrap around under the overhang and also on the first insulating layer. A step of forming a thin magnetic layer, and a second step of covering the magnetic layer by depositing an insulating material.
Forming an insulating layer, removing the mask, etching the first insulating layer from an opening, and forming a conductive material on the magnetoresistive film through the opening. It is characterized by having.

According to the above structure, it is possible to manufacture the magnetoresistive element defined by the fine openings without current leakage while using the conventional abutment junction process.

On the other hand, the magnetic recording / reproducing apparatus of the present invention is provided with any of the magnetoresistive effect elements according to the present invention, and is capable of reading the information magnetically recorded on the magnetic recording medium. To do.

According to the above arrangement, stable reading is possible even if the recording density is greatly increased.

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below with reference to the drawings.

FIG. 1 is a schematic view illustrating the cross-sectional structure of the essential part of a magnetoresistive effect element according to the first embodiment of the present invention.

In the magnetoresistive effect element of the present invention, the magnetoresistive effect film 20 is patterned and formed on the lower insulating layer 10, and the current block structure having the opening H is formed on the upper surface thereof. . This current block structure is
It has a structure in which an insulating layer 25, a bias film 30, and an insulating layer 40 are laminated.

The insulating layer 25 can be formed of silicon oxide, silicon nitride, alumina, or the like.
Then, the magnetoresistive film 20 is sandwiched on both sides, and the insulating layer 2
The bias films 30 and 30 are laminated on the bias film 5 and the insulating layers 40 and 40 are further stacked thereon. The tips of the bias film 30 and the insulating layer 40 are the magnetoresistive film 2
It extends to the upper surface of 0 and constitutes a part of current block structure.

The bias film 30 can be formed of various magnetic materials such as cobalt platinum (CoPt). The insulating layer 40 can be formed of an insulating material such as alumina.

The upper electrode 50 is formed so as to be connected to the magnetoresistive film 20 through the opening H. A lower electrode 60 is connected to the lower side of the magnetoresistive film 20. That is, in the case of this structure, the insulating layer 40,
The 40 openings are defined as "energized areas".

Here, the magnetoresistive film 20 is, for example,
A so-called “spin valve structure” in which a magnetization pinned layer (pin layer), a non-magnetic intermediate layer (spacer layer), and a magnetization free layer (free layer) are stacked in this order, or which has a magnetoresistive effect It may have various structures.

According to the present invention, the periphery of the opening H is covered with a current block structure having a double insulating structure composed of the insulating layer 25 and the insulating layer 40, so that an electrically reliable insulation is maintained. You can As a result, the current-carrying region can be accurately defined by the opening H, and a magnetoresistive effect element having a high output density and a stable output yield can be obtained.

Of these, the insulating layer 25 is not a film formed by "wraparound" like the insulating layer 40, so that the film quality is good and dense, and even if the layer thickness is made thin, a reliable insulating property is obtained. Can be demonstrated.

Further, by providing the insulating layer 25, the bias film 30 and the magnetoresistive effect film 20 can be separated from each other around the opening H. The bias magnetic field generated by the bias film 30 has a function of controlling the magnetic domains of the magnetoresistive effect film 20, but may reduce the magnetic permeability of the free layer of the magnetoresistive effect film 20. On the other hand, according to the present invention, by providing the insulating layer 25 between the bias film 30 and the magnetoresistive effect film 20 around the opening H to keep the distance between the bias film 30 and the free layer, It is also possible to solve the problem that the magnetic permeability of the free layer decreases due to the leakage magnetic field from the bias film 30 near the current-carrying region.

Furthermore, according to the present invention, the thickness S2 of the magnetoresistive effect element can be reduced. That is,
In the case of the structure illustrated in FIG. 12, the thickness of this portion must be increased in order to prevent current leakage near the tip E of the insulating layer 140.

FIG. 2 shows the structure shown in FIG.
It is a schematic diagram which illustrates the structure which formed the insulating layer 140 thickly. As shown in the figure, when the insulating layer 140 is formed thick, the height S1 of the step formed over the overlapping portion with the magnetoresistive film 120 also becomes large. Since the current I supplied to the upper electrode 142 has to flow so as not to be blocked by this step, it is necessary to inevitably increase the thickness of the upper electrode 142. As a result, the total thickness S2 of the magnetoresistive effect element increases, and the distance between the upper and lower shields (not shown) increases, which causes a problem that the reproduction resolution decreases, and the flattening process of the upper electrode becomes complicated. Problems such as doing occur.

On the other hand, according to the present invention, the current can be sufficiently blocked even if the insulating layer 25 provided on the magnetoresistive film 20 is made dense and the layer thickness is made thin. it can. Then, the insulating layer 4 overlaid thereon
The thickness of 0 may be thin, and the height S1 of the step can be reduced. In other words, there is no concern that the magnetic properties and current of the upper shield will be obstructed by this step, and the total thickness S2 of the magnetoresistive effect element can be reduced. as a result,
The reproduction resolution can be sufficiently increased by reducing the interval between the upper and lower shields (not shown).

Next, a method of manufacturing the magnetoresistive effect element of the present invention will be described.

3 to 5 are process cross-sectional views showing a main part manufacturing process of the magnetoresistive effect element of the present invention.

First, as shown in FIG. 3A, the lower insulating layer 10 and the lower pillar 60 serving as the lower electrode are formed on the lower shield (not shown). The lower pillar 60 has a function of supplying (or outflowing) a sense current to the magnetoresistive film from below. As the material of the lower pillar, various conductive materials such as copper (Cu), gold (Au), and silver (Ag) can be used.

In this example, copper (Cu) was used as the material of the lower pillar 60 and SiO ₂ was used as the material of the insulating layer 60. Further, the lower pillar 60 was formed in a cylindrical shape having a diameter of about 100 nm.

Next, a CPP type GMR film is formed and an insulating layer 25 is further deposited thereon. As the insulating layer 25, a thin film such as silicon oxide or silicon nitride which is dense and has a good film quality can be formed by using the CVD method or the like. Further thereon, the size of the GMR film 20 is set to about 0.2.
T-type resist 300 for patterning with a width of 5 μm
To form. That is, the cross-sectional shape of the resist 300 is T
The shape is V-shaped, the width a in the figure is 0.25 μm, and the overhang amount b is 0.07 μm, for example.

Here, the material and layer thickness of the laminated structure constituting the CPPGMR film 20 are, for example, from the bottom, tantalum (Ta) 5 nm / cobalt iron (CoFe) 1 nm / copper (Cu) 1 nm / cobalt iron (CoFe). ) 1 nm / copper (Cu) 1 nm / cobalt iron (CoFe) 1 nm / copper (Cu) 7 nm / cobalt iron (CoFe) 1 nm / copper (Cu) 1 nm / cobalt iron (CoFe) 1 nm / copper (Cu) 1 nm / cobalt iron (CoFe) 1 nm / platinum manganese (PtMn) 23 nm / tantalum (Ta) 2n
It can be m.

The insulating layer 25 has a film thickness of 5 nm, for example.
Silicon oxide (SiO ₂ ).

Next, as shown in FIG. 3B, the CPPG MR film 20 and the insulating layer 2 are formed using the resist 300 as a mask.
5 is patterned by anisotropic etching such as ion milling. At this time, the GMR film 20 and the insulating layer 2
5 is etched depending on the outer edge of the mask, that is, the shape outside the overhang.

Next, as shown in FIG. 4A, the bias film 30 and the insulating layer 40 are continuously deposited while leaving the resist 300. The bias film 30 has, for example, a layer thickness of 5
The insulating layer 40 may be made of cobalt platinum having a thickness of 0 nm, and the insulating layer 40 may have a thickness of 20 nm, for example, aluminum oxide (Al ₂ O ₃ ).
Can be A bias film base film (not shown) made of chromium (Cr) or the like may be provided between the insulating layer 10 and the bias film 30. In this case, the bias underlayer film may have a layer thickness of about 5 nm.

In this deposition process, the material of the bias film 30 and the insulating layer 40 wraps under the overhang portion of the resist 300 and is also formed on the GMR film 20 as shown in the figure.

Next, when the resist 300 is peeled off as shown in FIG. 4B, the deposit does not wrap around the contact portion between the resist 300 and the GMR film 20, and the deposit is about 0.1 μm.
An opening H of m is formed. In addition, since the resist 300 has the overhang as described above,
It is possible to surely cause “step break” when the bias film 30 and the insulating layer 40 are lifted off, and to reliably perform patterning thereof.

Next, as shown in FIG. 5A, CHF
_ThreeCompleted by RIE (reactive Ion Etching) by gas
The edge layer 25 is etched. Here, the insulating layer 40 is formed.
Al_TwoO_ThreeAnd SiO constituting the insulating layer 25_TwoWith
Etching under the condition that the selection ratio is about 10
By performing_TwoO_ThreeInsulating layer 40 consisting of
Almost no etching, SiO2 on the GMR film 20
To selectively etch only the insulating layer 25 consisting of
You can As a result, Al on the GMR film 20_Two
O_ThreeIn the portion covered by the film 40, the insulating layer 25
The rest, Al_TwoO _ThreeArea not covered by membrane 40
Of the insulating layer 25 is etched to form the GMR film 20.
The tantalum (Ta) film is exposed.

Next, as shown in FIG. 5B, a copper (Cu) film to be an upper electrode is formed from above. By doing so, electrical contact with the GMR film 20 is formed only in the portion of the opening H, and the lower pillar 60 is formed on the lower surface of the GMR film 20.
A magnetoresistive effect element is formed that is in electrical contact with. After that, an upper shield film (not shown) is further formed thereon, and the reproducing head section is completed.

As described above, according to the present invention, after the insulating layer 25 is formed on the magnetoresistive effect film 20 and patterned by anisotropic etching using a mask having an overhang, the bias film 30 is formed. By forming the insulating layer 40 so as to surround it, the double insulating structure can be formed around the opening H in a self-aligned manner.

Further, by forming a mask having an overhang, it is possible to surely cause "step break" between the bias film 30 and the insulating layer 40, and to perform patterning of these.

Further, according to the present invention, the CPPGMR film 2
T having an overhang when patterning 0
It is also convenient in that a normal AJ process can be applied as it is by using a mold mask.

By the way, as a method of forming a T-shaped mask having such an overhang, first, two layers of resist are formed, the upper layer resist is exposed and further developed, and this development is performed to form a lower layer resist. The method of forming "bite" is commonly used. However, with this method, when forming an overhang amount of about several tens of nm, the developing condition becomes considerably severe.

Therefore, a method for precisely controlling the amount of such overhang will be described below.

6 and 7 are process sectional views showing a modified example of the manufacturing method of the present invention.

First, as shown in FIG. 6A, GMR
The first low molecular weight polymer layer 210 is provided on the film 20 and the insulating layer 25, and a hard mask 220 such as SiO _{2 is provided} thereon.
Are sequentially formed, and an EB resist 230 is applied thereon to form a GMR film pattern. Here, the low molecular weight polymer layer 210 may have a thickness of 40 nm, and the SiO 2 hard mask 220 may have a thickness of approximately 150 nm.

Next, as shown in FIG. 6B, CHF
_ThreeSiO by RIE with gas _TwoHard mask 22
Pattern 0.

Further, as shown in FIG. 6C, the gas is changed to O ₂ gas to etch the low molecular weight polymer layer 210. At this time, an overhang of about 40 nm can be formed by controlling the RIE conditions.

After that, the normal AJ process can be applied.

That is, as shown in FIG. 7A, S
Insulating layer 25 and GM using iO ₂ hard mask 220
The R film 20 is patterned by ion milling. Further, a cobalt platinum (CoPt) bias film 30 and an alumina insulating layer 40 are deposited.

Then, by lifting off from the low molecular weight polymer layer 210, as shown in FIG.
The opening H whose opening width is precisely controlled can be formed by a dry process.

Here, in the method illustrated in FIGS. 6 and 7, the low molecular weight polymer layer 210 and the hard mask 22 are used.
In some cases, the stress acting between the low molecular weight polymer layer 210 and the hard mask 220 or the interface between the low molecular weight polymer layer 210 and the insulating layer 25 may cause peeling.

In such a case, the SiO 2 hard mask may be formed by a coating method such as SOG (Spin On Glass), or the method described below may be used.
8 and 9 are process cross-sectional views showing a further modified example of the manufacturing method of the present invention.

First, as shown in FIG. 8A, GMR
A silicon (Si) layer 240 is formed on the film 20 and the insulating layer 25 to a thickness of about 40 nm. On top of that, EB
A resist pattern 250 is formed.

Next, as shown in FIG. 8B, CHF
₃ with a -CF ₄ mixture gas to etch the silicon layer 240 is further formed an overhang by side etching. By this RIE, the amount of overhang can be controlled to about 40 nm.

Next, as shown in FIG. 8C, the insulating layer 25 and the GMR film 20 are patterned by ion milling using a laminated T-type mask composed of the EB resist 250 and the silicon layer 240. Subsequently, the cobalt platinum (CoPt) bias film 30 and the alumina insulating layer 40 are formed.
Deposit.

Next, as shown in FIG. 9A, the EB resist 250 is lifted off and removed.

Then, as shown in FIG. 9B, the silicon layer 240 is subjected to CF by using the alumina insulating layer 40 as a mask.
By performing RIE etching with ₄ gases, it is possible to form the opening H whose opening width is precisely controlled by a dry process.

Next, a magnetic recording / reproducing apparatus using the magnetoresistive effect element of the present invention will be described. That is, the above-described magnetoresistive element of the present invention can be incorporated in, for example, a recording / reproducing integrated magnetic head assembly and mounted in a magnetic recording / reproducing apparatus.

FIG. 10 is a perspective view of an essential part illustrating a schematic structure of such a magnetic recording / reproducing apparatus. That is, the magnetic recording / reproducing apparatus 150 of the present invention is an apparatus of the type using a rotary actuator. In the figure, a recording medium disc 200 is mounted on a spindle 152,
The motor is rotated in the direction of arrow A by a motor (not shown) in response to a control signal from a drive device controller (not shown). The magnetic recording / reproducing apparatus 150 of the present invention is provided with a plurality of medium disks 20.
It may have 0.

A head slider 153 for recording / reproducing information stored in the medium disk 200 is attached to the tip of a thin film suspension 154. Here, the head slider 153 has, for example, the magnetoresistive effect element or the magnetic head according to any of the above-described embodiments mounted near the tip thereof.

When the medium disk 200 rotates, the medium facing surface (ABS) of the head slider 153 is held with a predetermined flying height above the surface of the medium disk 200. Alternatively, the slider may be a so-called “contact traveling type” in which the slider contacts the medium disk 200.

The suspension 154 is connected to one end of an actuator arm 155 having a bobbin portion for holding a drive coil (not shown). A voice coil motor 156, which is a kind of linear motor, is provided at the other end of the actuator arm 155. The voice coil motor 156 includes a drive coil (not shown) wound around the bobbin of the actuator arm 155, and a magnetic circuit including a permanent magnet and a facing yoke that are arranged to face each other so as to sandwich the coil.

The actuator arm 155 is held by ball bearings (not shown) provided at two positions above and below the spindle 157, and the voice coil motor 156 is provided.
With this, it is possible to freely rotate and slide.

FIG. 11 is an enlarged perspective view of the magnetic head assembly ahead of the actuator arm 155 as viewed from the disk side. That is, the magnetic head assembly 1
The reference numeral 60 has an actuator arm 155 having, for example, a bobbin portion that holds a drive coil, and a suspension 154 is connected to one end of the actuator arm 155. A head slider 153 having one of the magnetoresistive effect elements described above with reference to FIGS. 1 to 9 as a magnetic detection element is attached to the tip of the suspension 154. The suspension 154 has a lead wire 164 for writing and reading signals, and the lead wire 164 and each electrode of the magnetic head incorporated in the head slider 153 are electrically connected. 1 in the figure
Reference numeral 65 is an electrode pad of the magnetic head assembly 160.

According to the present invention, by including any of the magnetoresistive effect elements described above with reference to FIGS. 1 to 9, the medium disk 200 has a higher recording density than the conventional one, especially when the element size is miniaturized. It is possible to reliably read the information magnetically recorded on the recording medium with high sensitivity.

The embodiments of the present invention have been described above with reference to specific examples. However, the present invention is not limited to these specific examples. For example, a ferromagnetic layer, an insulating film, an antiferromagnetic layer that constitutes a magnetoresistive effect element,
Specific materials such as the non-magnetic metal layer, the electrodes, and the like, the film thickness, shape, dimensions, and the like can be appropriately implemented by those skilled in the art to carry out the present invention in the same manner and obtain similar effects. Within the scope of the present invention.

Further, the magnetoresistive effect element of the present invention can be used also as a magnetic memory (MRAM), and the element size can be miniaturized to realize a highly integrated memory.

Further, the present invention can be applied to the magnetic head or the magnetic reproducing apparatus of the perpendicular magnetic recording system as well as the longitudinal magnetic recording system, and the same effect can be obtained.

Further, the magnetic reproducing apparatus using the present invention is
A so-called fixed type in which a specific recording medium is constantly provided may be used, while a so-called “removable” type in which the recording medium is replaceable may be used.

In addition, based on the magnetoresistive effect element, the magnetic memory, and the magnetic head described above as the embodiments of the present invention, all magnetoresistive effect elements, magnetic memories, and the like which can be appropriately modified and implemented by those skilled in the art. The magnetic head also belongs to the scope of the present invention.

[0080]

As described in detail above, according to the present invention,
Since the periphery of the opening that connects the magnetoresistive film and the electrode is covered with the current block structure having the double insulating structure including the two insulating layers, it is possible to maintain electrically reliable insulation. As a result, the current-carrying region can be accurately defined by the opening H, and a magnetoresistive effect element having a high output density and a stable output yield can be obtained.

When the magnetoresistive effect element of the present invention is used as a reproducing magnetic detecting element in a magnetic recording system, the size of the detecting element can be miniaturized in response to higher recording density. Therefore, it is possible to realize a magnetic recording system having a super recording density.

That is, it is possible to realize an ultrahigh-density magnetic recording system using a magnetoresistive effect element, which is a great industrial advantage.

[Brief description of drawings]

FIG. 1 is a schematic view illustrating a cross-sectional structure of a main part of a magnetoresistive effect element according to a first embodiment of the present invention.

FIG. 2 shows an insulating layer 140 in the structure illustrated in FIG.
It is a schematic diagram which illustrates the structure which formed thickly.

FIG. 3 is a process cross-sectional view showing a main part manufacturing process of the magnetoresistive effect element of the present invention.

FIG. 4 is a process cross-sectional view showing a main part manufacturing process of the magnetoresistive effect element of the present invention.

FIG. 5 is a process cross-sectional view showing a main part manufacturing process of the magnetoresistive effect element of the present invention.

FIG. 6 is a process sectional view illustrating a modified example of the manufacturing method of the present invention.

FIG. 7 is a process sectional view illustrating a modified example of the manufacturing method of the present invention.

FIG. 8 is a process sectional view showing a further modified example of the manufacturing method of the present invention.

FIG. 9 is a process sectional view illustrating a further modified example of the manufacturing method of the present invention.

FIG. 10 is a perspective view of a main part illustrating a schematic configuration of a magnetic recording / reproducing apparatus of the present invention.

FIG. 11 is an enlarged perspective view of the magnetic head assembly from the actuator arm 155 as viewed from the disk side.

FIG. 12 is a schematic view showing a cross-sectional structure obtained by applying a conventional AJ process to a vertical conduction type GMR element.

[Explanation of symbols]

10 Lower insulating layer 20 Magnetoresistive film 25 insulating layer 30 bias film 40 insulating layer 50 Upper electrode 60 Lower electrode 60 insulating layer 110 insulating layer 120 Magnetoresistive film 130 Hard magnet bias film 130 bias film 140 insulating layer 142 Lower electrode 144 upper electrode 150 Magnetic recording / reproducing device 152 spindle 153 head slider 154 suspension 155 actuator arm 156 voice coil motor 157 spindle 160 Magnetic head assembly 164 Lead wire 200 media discs 210 Low molecular weight polymer layer 220 hard mask 230 resist 240 Silicon layer 250 resist H opening

   ─────────────────────────────────────────────────── ─── Continued front page    (72) Inventor Tomohiko Nagata             1st Komukai Toshiba-cho, Sachi-ku, Kawasaki-shi, Kanagawa             Inside the Toshiba Research and Development Center (72) Inventor Michiko Hara             1st Komukai Toshiba-cho, Sachi-ku, Kawasaki-shi, Kanagawa             Inside the Toshiba Research and Development Center (72) Inventor Susumu Hashimoto             1st Komukai Toshiba-cho, Sachi-ku, Kawasaki-shi, Kanagawa             Inside the Toshiba Research and Development Center F-term (reference) 2G017 AC09 AD56 AD64                 5D034 BA03 BA15 BA19 CA08 DA07

Claims (5)

[Claims] 1. A first magnetoresistive film having a main surface, and an opening directly laminated on only one main surface of the magnetoresistive film and selectively exposing a part of the main surface.
Partly extends over the insulating layer and the first insulating layer excluding the opening, and a magnetic bias is mainly applied to a part of the magnetoresistive film from a part different from the one main surface. A conductive magnetic layer to be applied, a second insulating layer formed on the first insulating layer excluding the opening and on the conductive magnetic layer, and on a main surface of the magnetoresistive film. A pair of electrodes for passing a current in a direction substantially perpendicular thereto, and one of the pair of electrodes has a contact portion with the magnetoresistive film defined by an opening of the first insulating layer. A magnetoresistive effect element characterized by the above. 2. The layer thickness of the first insulating layer is substantially constant on the main surface of the magnetoresistive effect film, and the layer thickness of the second insulating layer is made thinner toward the opening. The magnetoresistive effect element according to claim 1, wherein: 3. The material of the first insulating layer and the material of the second insulating layer are different from each other.
The magnetoresistive effect element according to. 4. A step of forming a magnetoresistive effect film, a step of forming a first insulating layer on the magnetoresistive effect film, and a mask having an overhang on the first insulating layer. A step of forming, a step of etching the first insulating layer and the magnetoresistive film to form a pattern that reflects an outer edge shape of the mask overhang, and a step of forming a magnetic material by depositing a magnetic material. Forming a magnetic layer around the resistance effect film and wrapping the magnetic material under the overhang to form a thin magnetic layer also on the first insulating layer; Forming a second insulating layer so as to cover the magnetic layer by depositing; removing the mask and etching the first insulating layer from an opening; And a step of connecting and forming a conductive material to the magnetoresistive effect film, the manufacturing method of the magnetoresistive effect element. 5. A magnetic recording / reproducing device comprising the magnetoresistive effect element according to claim 1 and capable of reading information magnetically recorded on a magnetic recording medium. apparatus.