JP2003107014A - Method for correcting pattern position deviation and defect inspecting apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To enable high-speed alignment at an adjacent comparison time between patterns of chips. SOLUTION: A displacement signal is formed by binarizing a reflecting light luminance signal from a sample surface to be inspected. A predetermined rectangular region in the displacement signal is made a first region. A lateral (X) direction of the rectangular region is made a first direction, and pixel values along the first direction are accumulated to obtain a first direction cumulative value. A second direction profile is formed by sequentially arranging the first direction cumulative values in a second direction. Position information of edges of a repeating pattern is detected on the basis of the formed second direction profile. A deviation width of how much adjacent chips deviate in the second direction is detected on the basis of the edge position information, and the deviation width is corrected. A longitudinal (Y) direction is made the first direction and the same process is carried out. A two-dimensional deviation width is corrected in this manner.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention repeatedly patterns defects of minute projections such as ball grid arrays (BGA), wafer bumps, IC bumps, spacers used for substrates of liquid crystal display (LCD) and filters. The present invention relates to a pattern position deviation correction method and a defect inspection apparatus for correcting a pattern position deviation when the pattern position deviation is detected by the comparative inspection.

[0002]

2. Description of the Related Art An inspection apparatus that optically inspects whether or not there is a defect in the appearance of balls, bumps, etc., provided for connecting wiring such as an IC package, uses a laser beam for the surface of a sample to be inspected. Irradiate the sample, detect the reflected light with a photo sensor, measure the height of the surface of the sample to be inspected based on the detection signal, and based on the measured height information, there are defects in balls, bumps, etc. We are inspecting whether or not. One of the inspections is a repeated pattern adjacent comparison inspection. This is to perform defect inspection by comparing data (luminance) at the same positions of adjacent chips and detecting a portion where the comparison result is a predetermined value or more. When this repeated pattern adjacent comparison inspection is performed, it is necessary to perform highly accurate alignment of bumps or the like between adjacent chips. Conventionally, this alignment has been performed by a normalized correlation pattern matching method using a two-dimensional image.

[0003]

The normalized correlation pattern matching method requires a large amount of processing time because it has to process a large amount of data such as a two-dimensional image, and can speed up the inspection time. There was a problem that I could not.

The present invention has been made in view of the above points, and provides a pattern misalignment correction method and a defect inspection apparatus capable of performing high-speed alignment when comparing repetitive patterns of chips adjacent to each other. The purpose is to do.

[0005]

According to a first aspect of the present invention, there is provided a pattern position deviation correcting method, wherein a pattern position deviation correcting method for aligning repetitive patterns at the same position of adjacent chips on a sample to be inspected is provided. A binarized displacement signal corresponding to the position of the pattern is created based on a detection signal corresponding to reflected light or scattered light from the surface of the sample to be inspected, and a first region in the displacement signal is Each pixel value along one direction is accumulated, and a profile along a second direction orthogonal to the first direction is calculated for the first region based on the accumulated first direction accumulated value. It is characterized in that the shift width of the pattern in the second direction between the adjacent chips is calculated based on the calculated second direction profile.

The detection signal corresponding to the reflected light or scattered light from the surface of the sample to be inspected, that is, the reflected light brightness signal is a repetitive pattern such as bumps which is the inspection object, the surface shape of the wafer which is the inspection sample or the base. It is known to show a specific value depending on the shape and its material. For example, it has been known that the reflected light luminance signal of a repetitive pattern such as a bump exhibits an extremely small value as compared with the reflected light luminance signal of the surface of the sample to be inspected such as a wafer around the bump. Therefore, a threshold value is set approximately in the middle of the reflected light luminance signals of the repeated pattern and the surface of the sample to be inspected, and when the threshold value is larger than this threshold value, a low level "0"
And a small value is set to a high level “1” to create a binarized displacement signal. A predetermined rectangular area in this displacement signal is the first area. The horizontal (X) direction of this rectangular area is defined as the first direction, pixel values along the first direction are accumulated, and a first direction accumulated value is obtained. When the repeating pattern exists, the pixel value there is high level “1”, and therefore the accumulated value in the first direction becomes large. When the repeating pattern does not exist, the pixel value there is low level “0”. Therefore, the accumulated value in the first direction becomes small. A second direction profile is created by sequentially arranging such first direction accumulated values in the second direction. Since it is possible to detect the position information of the edges of the repetitive pattern based on the created second direction profile, it is possible to determine how much the adjacent chips are displaced in the second direction based on the position information of the edges. The shift width can be detected and the shift width can be corrected. By performing the same process with the vertical (Y) direction as the first direction, the two-dimensional shift width can be corrected at high speed.

According to a second aspect of the present invention, there is provided a pattern position deviation correction method according to the first aspect of the present invention.
Each pixel value along the second direction is accumulated for the region, and a profile along the first direction for the second region is calculated based on the accumulated accumulated value in the second direction. The first-direction deviation width of the pattern between the adjacent chips is corrected based on the calculated first-direction profile. It is possible to correct the two-dimensional shift width by using the pattern position shift correction method according to the first aspect. This is such that the area of the image signal is made different depending on the correction direction, and the deviation width is two-dimensionally corrected. Depending on the inspection device, the detectable image signal range may differ in the scan direction and the seek direction. Therefore, when calculating the accumulated value, the region of the image signal is appropriately determined according to each direction. It is necessary to make it large.

According to a third aspect of the present invention, there is provided a pattern position deviation correcting method according to the first aspect, wherein the second direction profile is differentiated and the pattern is misaligned in the second direction between the adjacent chips based on the differentiated profile. The width is corrected. The second direction profile may be used as it is, but this is because the second direction profile is differentiated so that the edges of the pattern can be more clearly grasped, and thus the possibility of misalignment is drastically reduced. is there.

According to a fourth aspect of the present invention, there is provided a pattern position deviation correcting method according to the second aspect, wherein the first and second directional profiles are differentiated, and the pattern of the adjacent chips is differentiated based on the differentiated profile. 1st and 2nd
This is to correct the deviation width. This is to make it possible to clearly grasp the edge of the pattern by differentiating the first and second direction profiles as in the case of the third aspect.

According to a fifth aspect of the present invention, there is provided a pattern position shift correction method according to the first, second, third or fourth aspect, wherein the pattern corresponds to bumps for connecting input / output signals provided on the surface of an LSI wafer. It is what This is to correct the displacement of the bump position between adjacent chips.

According to a sixth aspect of the present invention, there is provided a defect inspection apparatus for performing a defect inspection by comparing repetitive patterns at the same position of adjacent chips on a sample to be inspected. Displacement signal creating means for creating a binarized displacement signal corresponding to the position of the pattern based on a first detection signal corresponding to reflected light or scattered light, and reflected light or scattered light from the surface of the sample to be inspected. A combining unit that outputs a combined signal that combines the second detection signal corresponding to light and the displacement signal, a memory unit that stores the combined signal output from the combining unit, and an output from the combining unit. The first region in each of the displacement signals of the combined signal corresponding to the n-th chip and the combined signal corresponding to the (n-1) -th chip output from the memory means is described. Each pixel value along the first direction is accumulated, and a profile along the second direction orthogonal to the first direction for the first region based on the accumulated first direction accumulated value. And a position deviation correction means for correcting the second direction deviation width of the combined signal corresponding to the n-th or (n-1) th chip based on the calculated second direction profile, and the position. Defect detecting means for comparing the second detection signals corresponding to the n-th and (n-1) th chips after correction by the deviation correcting means to detect a defect. This relates to a defect inspection apparatus using the pattern position deviation correction method of claim 1. The binarized displacement signal and the second detection signal are combined by the combining means and are temporarily stored in the memory means. The misalignment correction means is a combined signal corresponding to the (n-1) th chip stored in the memory means,
The method according to claim 1, which is based on the displacement signals respectively included in the combined signal corresponding to the n-th chip output from the combining means.
The n-th or (n-
1) The second direction deviation width of the combined signal corresponding to the 1st chip is corrected. The defect detecting means detects a defect by comparing the second detection signals in the combined signals corresponding to the nth and (n-1) th chips corrected by the positional deviation correcting means. As a result, the pattern position deviation correction before the comparison process can be performed at high speed.

According to a seventh aspect of the present invention, there is provided the defect inspection apparatus according to the sixth aspect, wherein the positional deviation correcting means obtains each pixel value along the second direction for the second area in the displacement signal. The profile along the first direction is calculated for the second region based on the accumulated second direction accumulated value, and the n-th or the second direction profile is calculated based on the calculated first direction profile. The first direction deviation width of the combined signal corresponding to the (n-1) th chip is corrected. This is an application of the pattern position deviation correction method of claim 2 to a defect inspection apparatus.

A defect inspection apparatus according to an eighth aspect is the defect inspection apparatus according to the sixth or seventh aspect, in which the second direction profile is differentiated and the nth or (n-1) th chip is selected based on the differentiated profile. The second direction deviation width of the corresponding combined signal is corrected. This is an application of the pattern position deviation correction method of claim 3 to a defect inspection apparatus.

According to a ninth aspect of the present invention, in the defect inspection apparatus according to the seventh aspect, the first and second direction profiles are differentiated, and the nth or (n-1) th chip is differentiated based on the differentiated profile. For correcting the first and second directional deviation widths of the combined signal corresponding to This is an application of the pattern positional deviation correction method of claim 4 to a defect inspection apparatus.

The defect inspection apparatus according to claim 10 is
The pattern according to claim 6, 7, 8 or 9, wherein the pattern is LS.
It corresponds to bumps for connecting input / output signals provided on the surface of the I-wafer. This is to perform a defect inspection on bumps between adjacent chips.

[0016]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below with reference to the accompanying drawings. FIG. 1 is a diagram showing a schematic configuration of a fine protrusion inspection apparatus suitable for applying the pattern position deviation correction method of the present invention. FIG. 2 is a perspective view showing the inspection optical system in a three-dimensional manner in order to make FIG. 1 easy to understand. Therefore, in FIGS. 1 and 2, the same reference numerals are given to the same components. The micro-projection inspection apparatus of FIG. 1 is for inspecting bump defects based on height information of bumps formed on a plurality of chips in a wafer. This microprojection inspection apparatus includes an inspection stage section, an inspection optical system, and a signal processing section.

The inspection stage section of the microprojection inspection apparatus according to this embodiment comprises an XY stage moving mechanism 300, a wafer mounting table 302, and a stage drive circuit 304. The XY stage moving mechanism 300 moves the wafer mounting table 302 on which the wafer 306, which is the sample to be inspected, is mounted in the XY directions. The stage drive circuit 304 is controlled by the image processing / control device 500, and drives and controls the XY stage moving mechanism 300 so that the beam spot of the wafer 3 on the wafer mounting table 302 as shown in FIG.
06 is controlled to scan relatively in the X and Y directions. As shown in FIG. 4, the stage drive circuit 304 first moves the wafer 306 so that the beam spot performs main scanning in the X direction along the arrow 51 corresponding to the bump forming lines X1 and X2 of the chip 60 of the wafer 306. . After the end of the main scanning, the stage drive circuit 304 moves the wafer 306 to the position corresponding to the next bump forming lines X3 and X4 so that the beam spot is sub-scanned in the Y direction along the arrow 52. After the end of the main scanning, the stage drive circuit 304 follows the arrow 53 in the direction opposite to the above-described main scanning to form the bump forming lines X3, X4 of the chip 60.
The wafer 306 is moved so that the beam spot is mainly scanned in the X direction corresponding to. After this main scanning is completed, the stage drive circuit 304 determines that the bump forming line X of the next chip is
The wafer 306 is moved so that the beam spot is sub-scanned in the Y direction along the arrow 54 to the positions corresponding to 1 and X2. The above-described scanning method is the same as the bump formation line X.
1 and X2 can be inspected at the same time, or the bump formation line is only one column in the peripheral portion of the chip 60. If the bump formation lines X1 and X2 cannot be inspected at the same time, the stage drive circuit 304 Moves the wafer 306 so that main scanning is performed along the respective bump forming lines X1 and X2. In this way, when the main scan corresponding to the bump forming lines X1 to X4 is completed for all the chips of the wafer 306, the stage drive circuit 304 rotates the wafer 306 to the right or left by about 90 degrees. , Bump forming lines Y1 to Y
Similarly, for No. 4, the wafer 306 is moved so that the beam spot performs main scanning and sub scanning.

The inspection optical system of the microprojection inspection apparatus according to this embodiment includes a projection optical system for irradiating the wafer 306 with laser light and a detection optical system for guiding the laser light reflected by the wafer 306 to an optical sensor. Basically consists of The projection optical system includes a semiconductor laser light source 400, an S polarizing plate 401,
Collimating lens 402, acousto-optic deflector (AOD: A
Cousto-Optic Deflector) 40
4, a deflector drive circuit 405, an fθ lens 406, a lens 408, a polarization beam splitter 410, a quarter wavelength plate 412, and an objective lens 414.

The semiconductor laser light source 400 emits laser light having a predetermined frequency. The S polarization plate 401 transmits only the S polarization component of the laser light emitted from the semiconductor laser light source 400. The collimator lens 402 is the S polarizing plate 40.
The laser light of the S-polarized component that has passed through 1 is converted into a bundle of parallel rays. The acousto-optic deflector 404 includes a collimator lens 40.
The parallel light flux of the S-polarized component that has passed through 2 is transferred to the wafer 306.
The detection area 308 is converted into polarized light that reciprocates in the Y direction. The deflector drive circuit 405 includes an image processing / control device 50.
0, and supplies a drive signal of a predetermined frequency (about 4 MHz) to the acousto-optic deflector 404. fθ lens 4
06 and the lens 408 define the detection area 30 of the wafer 306.
It operates so that the laser beam is optimally focused at each scanning position of 8. Polarization beam splitter 410
Is for reflecting the laser light of the S-polarized component and transmitting the laser light of the P-polarized component. Therefore, the polarization beam splitter 410 reflects the S-polarized component laser light transmitted through the fθ lens 406 and the lens 408 to the wafer 306 side. The laser light reflected by the polarization beam splitter 410 is converted into a laser light having a circular polarization component by the quarter-wave plate 412, and is condensed on the wafer 306 via the objective lens 414.

The detection optical system includes an objective lens 414, a quarter-wave plate 412, a polarization beam splitter 410, half mirrors 416 and 418, shield plates 420 and 422, image forming lenses 424 and 426, and a two-divided optical sensor 428. 43
0, a spatial filter 432, an imaging lens 434, a slit 436, and a photomultiplier 438.
The reflected laser light of the circularly polarized light component reflected by the wafer 306 is
It passes through the objective lens 414 and the quarter-wave plate 412. At this time, the reflected laser light of the circular polarization component is 1/4.
By passing through the wavelength plate 412, it is converted into reflected laser light having a P-polarized component and is introduced into the polarization beam splitter 410. The polarization beam splitter 410 is attached to the wafer 3
The reflected light of 06, which is the reflected light of the P-polarized component from the quarter-wave plate 412, is transmitted to the half mirror 416 side in the subsequent stage. The half mirror 416 is arranged at an angle of 45 degrees with respect to the optical axis of the reflected laser light of the P-polarized component from the polarization beam splitter 410, and about half of the reflected laser light is arranged on the side surface of the optical axis. The bump defect detection optical system side is reflected, and about half of the reflected laser light is transmitted to the wafer surface defect detection optical system side.

The bump defect detection optical system includes a half mirror 4
18, shielding plates 420, 422, imaging lenses 424, 42
It is composed of 6 and 2 split optical sensors 428 and 430. The half mirror 418 is arranged at an angle of 45 degrees with respect to the optical axis of the reflected laser light from the half mirror 416, and about half of the reflected laser light is arranged on the side surface of the optical axis. The light is reflected toward the 428 side and approximately half of the reflected laser light from the half mirror 416 is transmitted to the two-division optical sensor 430 side. The shield plates 420 and 422 are
Half mirror 418 and two-division optical sensors 428, 430
And is arranged between the two half-mirrors 416 and half-mirrors 416 to shield different half-side areas of the cross section of the reflected laser light. As shown in FIG. 1, the shield plate 422 shields the lower half region of the laser light transmitted through the half mirror 418, that is, the lower half region of the laser light reflected by the half mirror 416. The right half area of the laser light reflected by the half mirror 418, that is, the upper half area of the laser light reflected by the half mirror 416 is shielded. The shield plates 420 and 422 may be arranged between the imaging lenses 424 and 426 and the two-divided optical sensors 428 and 430.

The imaging lenses 424 and 426 are connected to the shield plate 42.
Images corresponding to the laser light not blocked by 0 and 422 are formed on the two-division optical sensors 428 and 430, respectively. The two-division optical sensors 428 and 430 receive the reflected laser light from the half mirror 416 and output detection signals A to D corresponding thereto. Two-division optical sensor 42
8, 430 are the same Y as the detection area 308 of the wafer 306.
The photosensor is formed by dividing the light receiving region into two along the direction (deflection direction). Therefore, the two-division optical sensor 4
28 and 430 output independent detection signals A to D, respectively. In the case of FIG. 1, the Y direction (deflection direction) of the detection area 308 of the wafer 306 and the two-division optical sensors 428 and 430.
The deflection direction in which the image formed above reciprocates is the depth direction of the drawing.

The wafer surface defect detection optical system comprises a spatial filter 432, an imaging lens 434, a slit 436 and a photomultiplier 438. Spatial filter 4
The numeral 32 is arranged on the optical axis of the transmitted laser light from the half mirror 416, cuts the 0th-order light component of the transmitted laser light, and reflects the higher-order reflected and scattered light other than the 0th-order light component by the photomultiplier 438. Pass to the side. Imaging lens 434
Is an image corresponding to the laser beam that has passed through the spatial filter 432 and a photomultiplier 438 through a slit 436.
Image on top. The slit 436 is composed of a gap formed along the same Y direction (deflection direction) as the detection region 308 of the wafer 306. Photomultiplier 438
Among the light collected by the imaging lens 434, the laser light that has passed through the slit 436 is received and a current corresponding to the intensity of the laser light is output.

The signal processor is an image processing / control device 50.
0, amplifiers 502A to 502D, analog-digital (A / D) converters 504 and 505, an amplifier 506, a defect detection circuit 508, and an A / D converter 510. The amplifiers 502A to 502D are the two-division optical sensor 4
The detection signals A to D output from the respective terminals of 30, 428 are amplified and supplied to the A / D converters 504, 505. A /
The D converters 504 and 505 are provided with amplifiers 502A to 502, respectively.
The analog detection signals A to D output from D are converted into digital signals and supplied to the image processing / control apparatus 500.
The amplifier 506 amplifies the detection current output from the photomultiplier 438 and supplies it to the defect detection circuit 508. If foreign matter, dirt, scratches, chips, or other defects are present on the wafer 306, the photomultiplier 438 is caused thereby.
Since the laser light is incident on for a moment, the photomultiplier 438 accordingly outputs a pulsed current. The defect detection circuit 508 supplies the A / D converter 510 with a defect detection signal corresponding to a defect on the surface of the wafer 306 detected based on the pulsed current. The A / D converter 510 converts the analog defect detection signal output from the defect detection circuit 508 into a digital defect detection signal and supplies the digital defect detection signal to the image processing / control apparatus 500.

The image processing / control device 500 is composed of a microcomputer system including a microprocessor unit (CPU), a program memory (ROM), a working memory (RAM), a hard disk device (HDD), an external interface, etc., which are not shown. It is designed to execute various processes. Although not shown, the image processing / control device 500 includes
A keyboard, a monitor screen, etc. are connected and a graphical user interface (GUI) is constructed with the operator. Memory (R in image processing / control device 500)
OM, RAM, HDD), bump height shape detection program, wafer scanning program, defect detection program,
Various programs such as a focusing program are stored.

The bump height shape detection program is executed in response to the operation of a predetermined inspection start key on the keyboard. By executing this bump height shape detection program, the image processing / control apparatus 500 executes each program in the order of the focusing program, the wafer scanning program, and the defect detection program. The focusing program adjusts the fθ lens 406, the lens 408, and the objective lens 414 based on the detection signals A to D output from the two-division optical sensors 428 and 430, and the wafer 306.
Focusing is performed so that the focal point of the laser light is located on the surface of the. The wafer scanning program is the stage drive circuit 30.
4 and the deflector drive circuit 405 to supply a control signal,
The main scan and the sub-scan as shown in the above are repeatedly executed, and each A
Detection signal A output from the / D converters 504 and 505
The defect detection signal output from the D and A / D converter 510 is temporarily stored in the memory area. The defect detection program detects bump height information based on the detection signals A to D output from the A / D converters 504 and 505, detects bump defects and the like based on the information, and performs A / D conversion. Bowl 5
Wafer 30 based on the defect detection signal output from
Defect positions such as foreign matter, dirt, scratches and chips on wafer 6
06 above. Note that details of how the height information is detected based on the detection signals A to D will be described later.

FIG. 3 is a view of the wafer 306 mounted on the wafer mounting table 302 as seen from the upper surface side. As is apparent from the figure, a plurality of rectangular chips are regularly provided on the wafer 306. In the chip 60, as shown in FIG. 4, a plurality of bumps are regularly arranged on the bump forming lines X1 to X4 and Y1 to Y4 provided along the periphery of the chip. In FIG. 4, the shape of the bump is shown as a square. Further, in FIG. 4, two bump forming lines (X1, X
2), (X3, X4), (Y1, Y2), (Y3, Y
Although 4) is shown, it is usually one or more.

FIG. 5 is a diagram showing a scanning state of laser light on the bumps on the bump formation line. In FIG. 5, the bumps 72 and 73 are formed on the pads 70 and 71 along the bump forming line X1. The detection region 308 in the Y direction of FIG. 2 corresponds to the vertical direction in FIG.
The distance is 0.36 [mm]. The diameter of the beam spot 74 of the laser light with which the surface of the wafer 306 is irradiated is about 3.6 [μm], and the beam spot 74 scans the detection region 308 by reciprocating at a frequency of 4 [MHz]. Further, when the beam spot 74 scans the detection region 308 downward, the bump formation line X1
The scanning operation of moving the detection area 308 in the upward direction again by moving a predetermined pitch of 3 [μm] along and moving by a predetermined pitch is repeated. The bump forming line X1
When the movement in the direction is continuous, zigzag scanning is performed,
The bump forming line X1 is synchronized with one scan in the Y direction.
If the movement in the direction is performed, the scanning becomes rectangular as shown in FIG.

This microprojection inspection apparatus employs the knife edge method as a focus error detection optical system for scanning a sample to be inspected and measuring the displacement of its height based on the reflected light corresponding to the irregularities on the surface. There is. 6 and 7 are views for explaining the detection principle based on the knife edge method. The knife edge method is conventionally known, and its basic principle is that, as shown in FIGS. 6 and 7, the reflected light from the wafer 306, which is the sample to be inspected, is shield plates 420, 422 that are knife edges. Through the two-division optical sensor 428,4
30 receives light, and the wafer 3 is detected based on the detection signals A to D.
06 The height of the unevenness on the surface is detected. Note that in FIGS. 6 and 7, a quarter of the inspection optical system of FIGS.
The wave plate 412, the polarization beam splitter 410, the half mirrors 416 and 418 are omitted, and the imaging lenses 424 and 42 are provided.
6 and the objective lens 414 are integrally formed. Therefore, in FIGS. 6 and 7, the imaging lens 4
The shielding plates 420 and 422 are shown as being present between the 24 and 426 and the two-divided optical sensors 428 and 430.

Normally, in order to detect the height of the unevenness on the surface of the wafer 306, the half mirror 418 is omitted, and the reflected laser light from the half mirror 416 is received by one two-division optical sensor 430, and the detection is performed. The height information ε can be obtained based on the signals A and B. Two-division optical sensor 4
The boundary length L of the light receiving region of 30 corresponds to the detection region 308 of the wafer 306. The height information ε is the detection signal A, B
It is calculated by applying the value of to the arithmetic expression (AB) / (A + B). For example, as shown in FIG.
If the wafer 306 has neither a convex portion (projection) nor a concave portion (concave) and its surface is at the in-focus position of the objective lens 414,
The image forming point of the reflected laser light is on the surface of the two-divided optical sensor 430, and can be formed in the vicinity of the boundary between the two light-receiving regions. As a result, the detection signals A and B output from the two-division optical sensor 430 are substantially equal to each other, so that the height information ε =
(A−B) / (A + B) becomes “0”.

As shown in FIG. 6C, when the wafer 306 has a convex portion (projection), the image forming point of the reflected laser light is located on the rear side of the two-division optical sensor 430. Therefore, the left side of the two-division optical sensor 430 (detection signal A
On the side), a beam spot of the reflected laser light having a semicircular shape having a diameter corresponding to the size (height) of the convex portion (protrusion) is formed. Height information in this case ε = (AB) /
(A + B) is a positive value (ε> 0). This height information ε corresponds to the size (height) of the convex portion (protrusion). On the contrary, as shown in FIG. 7A, when the wafer 306 has a recess (a depression), the image forming point of the reflected laser light comes to be located in front of the two-division optical sensor 430. Right side of the two-division optical sensor 430 (detection signal B side)
Is irradiated with a beam spot of a semi-circular reflected laser light having a diameter corresponding to the size (depth) of the recess (dent). Height information in this case ε = (A−B) / (A
+ B) is a negative value (ε <0). The height information ε corresponds to the size (depth) of the recess (dent).

As described above, although the reflected laser light from the half mirror 416 can be received by only one two-division optical sensor 430, the height information ε can be obtained based on the detection signals A and B. In the microprojection inspection apparatus according to this embodiment, a half mirror 418 is provided, and the reflected laser light is split into two parts through a shield plate (knife edge) 420 having a complementary positional relationship with the shield plate 422. Light is received by the sensor 428, and the height information ε is obtained based on the detection signals A to D. For the height information ε, the values of the detection signals A to D are calculated by the equation {(AB) + (CD)} /
Calculated by applying to (A + B + C + D). As shown in FIGS. 6A and 6B, when the wafer 306 has neither protrusions (protrusions) nor recesses (recesses), the values of the detection signals A to D output from the two-division optical sensors 428 and 430 are Since they are almost equal, the height information ε is “0”.

Wafer 306 as shown in FIGS.
When there is a convex portion (projection) on the left side (the detection signal A side) of the two-division optical sensor 430 and the two-division optical sensor 4
On the right side of 28 (on the side of the detection signal C), a beam spot of a semicircular reflected laser light having a diameter corresponding to the size (height) of the convex portion (projection) is irradiated. Therefore, the height information ε = {(A−B) + (C−D)} / (A in this case
+ B + C + D) is a positive value (ε> 0). Figure 7
In the case where the wafer 306 has a recess (dent) as in (a) and (b), the right side of the two-division optical sensor 430 (detection signal B side) and the left side of the two-division optical sensor 428 (detection signal D side). ) Is irradiated with a beam spot of a semi-circular reflected laser light having a diameter according to the size (depth) of the recess (dent). Therefore, the height information ε in this case
= {(A-B) + (C-D)} / (A + B + C + D)
Is a negative value (ε <0).

As described above, the two-system two-division optical sensor 4
Since the height information ε is obtained based on the detection signals A to D from the sensors 28 and 430, in addition to the effect that the detection accuracy is improved, the following effects are obtained. That is, the semiconductor laser light source 400, the S-polarizing plate 401, the collimating lens 402, the acousto-optic deflector 404, the deflector driving circuit 405, the fθ lens 406, the lens 408, the polarization beam splitter 410, and the quarter of the projection laser optical system. Thermal fluctuation of the wave plate 412 and the objective lens 414 or the acousto-optic deflector 4
When a spot scanning shift (Δt) occurs as shown in FIGS. 7C and 7D due to the deflection error of 04 itself, the spot position on the surface of the two-division optical sensors 428 and 430 is moved to the left side (detection signal A side). It will shift. The spot scanning shift (Δt) means a case where the laser light has to be vertically incident on the wafer 306 from the objective lens 414, but is incident at a certain angle.

In such a case, the half mirror 418 is omitted as in the conventional case, and the reflected laser light from the half mirror 416 is received by only one two-division optical sensor 430,
When the height information ε is obtained based on the detection signals A and B,
In the case of FIG. 6C and FIG. 7C, the left side (detection signal A side) of the two-division optical sensor 428 is irradiated even though the size (height) of the convex portion (projection) is the same. The spot area of the reflected laser light thus generated differs between the cases shown in FIGS. 6C and 7C. When the spot areas are different as described above, the height with an error is detected in the case of FIG. 7C, although the actual heights of the convex portions (projections) are the same. . That is, this is because the magnitude of the detection signal A is larger in the case of FIG. 7C than in the case of FIG. 6C, and therefore the arithmetic expression (A−B) /
This is because the value (AB) on the numerator side of (A + B) varies depending on the magnitude of the detection signal A.

However, as in the microprojection inspection apparatus according to this embodiment, two systems of two-division optical sensor 42 are used.
Height information ε based on the detection signals A to D from 8,430.
The magnitude of the detection signal A is calculated by
Even if the case of FIG. 7C is larger than the case of FIG. 7C, the magnitude of the detection signal C is complementary in the case of FIG. 7D rather than the case of FIG. 6D. Becomes smaller. That is,
Calculation formula for obtaining height information ε {(A−B) + (C−D)}
The value on the numerator side of / (A + B + C + D) {(AB) + (C
-D)} is a substantially constant value without changing. Therefore, according to the microprojection inspection apparatus according to this embodiment, the thermal fluctuation of the optical element of the projection optical system and the acousto-optic deflector 4 are performed.
04 Due to the deflection error of itself, the spot scanning deviation (Δ
Even if t) occurs, there is an effect that it is possible to perform highly accurate height measurement without being affected by it.

When a defect such as the height or shape of the inspection object having a three-dimensional structure is detected as in the microprojection inspection apparatus according to this embodiment, the inspection is performed with a three-dimensional object such as a pattern existing around the defect. It is necessary to clearly identify the object. Until now, when a plurality of inspection objects are arranged intricately on a sample to be inspected, complicated coordinate setting management is performed for each inspection object. Therefore, in the microprojection inspection apparatus according to this embodiment, the detection signals A to D output from the two-division optical sensors 428 and 430 are used.
Based on the above, the coordinate position of the bump, which is the inspection object, is measured with high accuracy, and the adjacent comparison is performed.

FIG. 8 is a diagram for explaining the outline of the method for measuring the coordinate position of the bump which is the inspection object by binarizing the detection signal. FIG. 8A is a diagram of a part of the surface of the wafer on which the bumps are formed, viewed from above. Figure 8
8B is a diagram showing a cross-sectional shape of the bump of FIG. 8A. As shown in FIG. 8A, the bump 72 is formed on the pad 70 so as to have a convex portion (protrusion) as shown in FIG. 8B. When the scanning area of the arrow 101 is scanned by the beam spot of the laser light irradiated on the surface of the wafer 306, the A / D converters 504 and 505 generate signals representing the reflected light brightness as shown in FIG. 8C. To be extracted.
That is, this reflected light luminance signal is transmitted to the two-division optical sensor 4
28, 430 sum of the detection signals A to D, that is, the above-described arithmetic expression {(A−B) + (C−D)} /
It is a value (A + B + C + D) on the denominator side of (A + B + C + D).

This reflected light luminance signal (A + B + C + D)
Has been found to show a specific value depending on the surface shape of the bump which is the inspection object and the wafer 306 which is the sample to be inspected, the underlying shape and the material thereof. That is, it is known that the reflected light luminance signal of the bump 72 has an extremely small value as compared with the reflected light luminance signal of the wafer 306 around the bump 72, as shown in FIG. 8C. Therefore, in this embodiment, a threshold value is set approximately in the middle of the reflected light luminance signals of the bump 72 and the wafer 306, and when the threshold value is larger than this threshold value, the low level is set to "0", and when it is smaller than the threshold value. As the high level “1”, the binary sampling of the surface of the wafer 306, which is the sample to be inspected, is performed.

FIG. 8 (d) shows the result of binarization sampling of the reflected light luminance signal of FIG. 8 (c).
8E is a diagram showing a result when the periphery of the bump 72 of FIG. 8A is binarized. As is clear from these figures, by binarizing and sampling the surface of the wafer 306, bumps between adjacent chips can be obtained without complicated coordinate management such as in the conventional normalized correlation pattern matching method. It becomes possible to correct the positional deviation of the two and accurately align the two.

9 to 12 are views for explaining the outline of the operation of the pattern position deviation correcting method according to the present invention. FIG. 9 is a diagram showing seek (Y) between chips adjacent to each other in the scan (X) direction. FIG. 10 is a diagram showing an operation example in the case of correcting the positional deviation in the () direction, and FIG. 10 is a diagram schematically showing a seek (Y) direction positional deviation waveform generated by the positional deviation in FIG. 9. The bumps 81 to 84 in FIG. 9A are present on the (n-1) th chip that has been scanned and is the target of the adjacent comparison, and the bump 85 in FIG.
Reference numerals 88 to 88 denote chips to be subjected to the adjacent comparison, which are present on the n-th chip currently being scanned, and both show cases where the periphery of the bump is binarized.

As is apparent from FIG. 9, 1024 pieces of data can be obtained in the scan (X) direction from the binarized image data, and 11 pieces of data can be obtained in the seek (Y) direction. Can be obtained. The upper ends of the bumps 81 to 84 on the (n-1) th chip are positioned at the center profile data 0S in the seek (Y) direction. The profile data existing at the front position from the central profile data 0S is represented by -5S to -1S, and the profile data existing at the rear position is represented by + 1S to + 5S. Each profile data −5S to + 5S has a sum Σ of 1024 pieces of data in each scan (X) direction.
(N-1) is accumulated. In the case of FIG. 9A, the bump 8
Since 1 to 84 exist in the range of profile data 0S to + 5S, each sum Σ (n-1) of profile data -5S to -1S is "0", and each sum Σ of profile data 0S to + 5S ( n-1) is the bumps 81 to 84
It becomes a value corresponding to the number and width of. On the other hand, FIG.
In the case of (b), the bumps 85 to 88 on the n-th chip
Exists at a position two scanning lines before in the seek (Y) direction as compared with the bumps 81 to 84 on the (n-1) th chip. That is, the upper ends of the bumps 81 to 84 on the (n-1) th chip are located in the seek (Y) direction profile data -2S. Therefore, in this case as well, the sum Σ of 1024 pieces of data in each scan (X) direction is similarly included in each profile data −5S to + 5S.
(N) is accumulated respectively, and in the case of FIG. 9B, profile data -5S to -3S, + 4S,
Each sum Σ (n) of + 5S is “0”, and each sum Σ (n) of profile data −2S to + 3S is bumps 85 to 85.
The value corresponds to the number of 88 and its width.

Therefore, in this embodiment, the sum Σ (n−1), Σ (n) of the profile data −5S to + 5S in each of the nth and (n−1) th chips is, for example, width = 4. Differentiate with. By this differentiation processing, FIG.
Seek (Y) direction differential profile ch as shown in
ip (n-1) and chip (n) are created. Figure 10
, The seek (Y) direction differential profile c on the left side
hip (n-1) is profile data -5S to + 5S
Of the profile data −5S to + 5S, and the seek (Y) direction differential profile chip (n) on the right side is obtained by differentiating the sum Σ (n) of the profile data −5S to + 5S. As apparent from FIG. 10, seek (Y)
Directional differential profile chip (n-1), chip
By comparing (n), it is possible to detect the deviation width (Y deviation) of each bump in the seek (Y) direction. In this embodiment, seek (Y)
The directional differential profile chip (n-1) is compared with the profile shifted in the seek (Y) direction in the range of -3 to +3, and the seek (Y) direction line with the highest degree of coincidence is selected and stored in the correction memory. By doing so, the deviation width (Y deviation) in the seek (Y) direction is corrected. However, the shift range in the seek (Y) direction is not limited to this. Here, the seek (Y) direction differential profile obtained by differentiating the sum Σ (n) of the profile data −5S to + 5S is used, so that the edge of the bump can be more clearly grasped by the differentiation, and the positional deviation This is because the possibility of causing it can be dramatically reduced. Therefore, the profile data −5S to + 5S as it is without differentiation.
The sum Σ (n) may be used, but the raw data is noisy and may be misaligned.

FIG. 11 is a diagram showing an operation example in the case of correcting the positional deviation in the scan (X) direction between chips adjacent to each other in the scanning (X) direction, and FIG. 12 is caused by the positional deviation in FIG. It is a figure which shows the outline of a position shift waveform in a scan (X) direction. The bumps 81 to 84 of FIG.
1 is a chip to be subjected to the adjacent comparison and is present on the (n-1) th chip that has already been scanned.
The bumps 85 to 88 of 1 (b) are chips to be subjected to the adjacent comparison and are present on the n-th chip currently being scanned, and both show the case where the periphery of the bump is binarized. ing.

As is apparent from FIG. 11, 1024 pieces of data can be obtained in the scan (X) direction from the binarized image data, and 15 pieces of data can be obtained in the seek (Y) direction. Can be obtained. Here, the sum total of 15 pieces of data in the seek (Y) direction corresponding to 1024 words in the scan (X) direction is created as word profile data. The sum Σ (n−1) of 15 pieces of data in the seek (Y) direction is accumulated in the word profile data corresponding to 1024 words. In the case of FIG. 11A, the bump 81 corresponds to the range of the third to eighth word profile data, and the bump 82 has the range of 12 to 12.
Corresponds to the 17th word profile data range,
The bumps 83 correspond to the range of the 21st to 26th word profile data, and the bumps 84 correspond to the range of the 30th to 35th word profile data, and are present corresponding to 6 pieces in the seek (Y) direction. To do. Therefore, each sum Σ (n−1) of the word profile data corresponding to the bumps 81 to 84 becomes a value corresponding to the number of bumps 81 to 84 and the width thereof, and in the case of FIG. 6 ”. The sum Σ (n−1) of the other word profile data is “0”. On the other hand, FIG.
In the case of 1 (b), the bumps 85 to 88 are shifted to the right by two pieces of word profile data. That is, the bump 85 corresponds to the range of the 5th to 10th word profile data, the bump 86 corresponds to the range of the 14th to 19th word profile data, and the bump 8
7 corresponds to the range of the 23rd to 28th word profile data, and the bumps 88 correspond to the range of the 32nd to 37th word profile data, and are respectively present corresponding to 6 in the seek (Y) direction. . Therefore, in this case as well, the word profile data similarly has a total sum Σ (n) of 15 data in each seek (Y) direction.
Will be accumulated, and the sum Σ (n) of the word profile data corresponding to the bumps 85 to 88 will be “6”, and the sum Σ (n) of the other word profile data will be “0”. Become.

In this embodiment, as in the case described above, the sum Σ (n−1), Σ of the word profile data in each of the nth and (n−1) th chips.
(N) is differentiated with, for example, width = 4. By this differentiation processing, scan (X) direction differential profiles chip (n-1) and chip (n) as shown in FIG. 12 are created. In FIG. 12, the lower scan (X) direction differential profile chip (n-1) is obtained by differentiating the sum Σ (n-1) of the word profile data, and the upper scan (X) direction differential profile chip (chip).
(N) is a derivative of the sum Σ (n) of the word profile data. As apparent from FIG. 12, the scan (X) direction differential profile chip (n−1), c
By comparing hip (n), the deviation width (X deviation) in each scan (X) direction of the bump can be detected. In this embodiment, the scan (X) direction differential profile chip (n−1) is compared with the profile obtained by shifting the scan (X) direction in the range of −2 to +2 in the scan (X) direction, and the scan with the highest degree of coincidence ( The line width in the scan (X) direction (X shift) is corrected by selecting the line in the X direction and storing it in the correction memory. However, the shift range in the scan (X) direction is not limited to this.

When the deviation correction in the X and Y directions is completed by the processing shown in FIGS. 9 to 12, next, the adjacency comparison processing of FIG. 13 is performed. FIG. 13 is a diagram showing an outline of the adjacency comparison processing performed based on the coordinate positions of the bumps that have been binarized and sampled by the measurement method of FIG. 8 and the displacement correction in the X direction and the Y direction of FIGS. Is. Figure 1
3 (a) shows a state of binarization around bumps which are adjacent comparison targets of adjacent chips, and FIG. 13 (b) shows a graph of the height information ε near the center of each bump. It is shown. In the figure, areas 75 to 79 of high level “1” are the portions where the bumps of each chip exist, and the comparison pitch of the adjacent comparison target is specified based on these. Then, the adjacent comparison based on the comparison pitch is performed based on the height information ε as shown in FIG. The result of the adjacent comparison process is as shown in FIG. That is, the regions 75, 76, and 78 are determined to be normal as a result of the adjacency comparison, the region 77 is determined to be a bump missing defect, and the region 79 is determined to be a bump height defect. Note that FIG.
It is also possible to detect the bump defect based on the binarized bump coordinate position of (a). That is, FIG.
In the case of 3 (a), the lower right part of the region 77 is missing in the binarized sampling data, and it can be detected that there is a bump missing defect in this part.

In the above-mentioned embodiments, the bumps have been described as an example. However, the present invention is applicable to bumps, balls, soldering protrusions, LCD filter spacers, etc.
It goes without saying that it can be applied to the detection of various minute protrusions. Further, in the above-described embodiment, the case where the number of divisions of the optical sensor of the focus error detection optical system is two is described as an example, but it goes without saying that the number of divisions may be more than two. Needless to say, the CCD light receiving element of can be used. In the above-described embodiment, an example in which the wafer surface defect detection optical system is provided and the wafer surface can be inspected at the same time has been described, but these may be omitted. In the above-described embodiment, the semiconductor laser light source is described as an example of the light projecting optical system, but it goes without saying that other light sources such as white light may be used. Although the wafer mounting table is moved by the XY stage moving mechanism in the above-described embodiment, it goes without saying that the optical system may be moved. In the above-described embodiment, the acousto-optic deflector and the polygon mirror are described as an example of deflecting the light beam so that the light beam is reciprocally scanned in a predetermined cycle. However, a galvano mirror, a digital micromirror device (DMD), or the like is used. It goes without saying that other deflectors may be used.

FIG. 14 is a diagram showing a modified example of the wafer surface defect detection optical system of the microprojection inspection apparatus shown in FIGS. In FIG. 14, the same components as those in FIGS. 1 and 2 are designated by the same reference numerals, and the description thereof will be omitted. The wafer surface defect detection optical system shown in FIG. 14 is provided with a CCD line sensor 440 instead of the slit 436 and the photomultiplier 438 shown in FIGS.
The CCD line sensor 440 has a longitudinal direction provided along the Y direction (deflection direction), and the imaging lens 43.
The laser light focused by 4 is received, and a voltage corresponding to the intensity of the laser light is output.

FIG. 15 shows the two-division optical sensor 42 of FIG.
Detection signal output from 8,430 (reflected light luminance signal)
The image processing / control device 5 based on the voltages (scattered light luminance signal) output from A to D and the CCD line sensor 440.
It is a figure which shows the outline of the defect inspection apparatus which 00 performs. This defect inspection apparatus includes a displacement calculation circuit 151 and a synthesis circuit 15
2, a memory 153, an XY position shift correction circuit 154, and a defect detection circuit 155. Displacement calculation circuit 15
1 denotes the detection signals A to A from the A / D converters 504 and 505.
Based on D, the reflected light luminance signal is binarized as shown in FIG. 8 to create a binarized sampling signal (1 bit configuration) of the surface of the wafer 306, which is the sample to be inspected, and the binarized signal is sent to the synthesis circuit 152. Output. The synthesizing circuit 152 simply synthesizes the binarized sampling signal from the displacement calculating circuit 151 with the 8-bit scattered light luminance signal from the A / D converter 510 so that the binarized sampling signal becomes the most significant bit, and the 9-bit configuration is obtained. And outputs the combined signal to the memory circuit 153 and the XY position shift correction circuit 154. The memory circuit 153 stores the synthesized signal corresponding to the scanned (n-1) th chip which is the target of the adjacent comparison, and the binarized sampling which is the most significant bit among them. Signal is XY
The misalignment correction circuit 154 outputs the remaining 8-bit scattered light intensity signal to the defect detection circuit 155. The XY positional deviation correction circuit 154 includes a binarized sampling signal, which is the most significant bit in the combined signal corresponding to the n-th chip currently being scanned, which is the chip to be subjected to the adjacent comparison, and the memory circuit. Based on the binarized sampling signal corresponding to the (n-1) th chip output from 153, the correction of the deviation in the X direction and the Y direction as shown in FIGS. 9 to 12 is applied to the nth chip. The scattered light intensity signal having an 8-bit configuration is output to the defect detection circuit 155. The defect detection circuit 155 is the XY positional deviation correction circuit 1
The scattered light intensity signal of 8-bit configuration corresponding to the n-th chip, which has been subjected to the positional deviation correction, output from 54, and the 8-bit configuration of scattering light corresponding to the (n-1) -th chip output from the memory circuit 153. Adjacent comparison processing is performed based on the light intensity signal to detect a defect. Although the case where the defect detection is performed based on the scattered light intensity signal has been described here, the adjacent comparison processing may be performed based on the height information ε and the reflected light luminance signal as shown in FIG. 13. Further, although the displacement calculation circuit 151 has described the case where the binarized signal is created based on the reflected light brightness signal, it may be created based on the height information ε or the reflected light brightness signal.

[0051]

According to the pattern position deviation correcting method of the present invention, there is an effect that it is possible to perform the alignment at a high speed when the patterns of the chips are compared adjacent to each other.

[Brief description of drawings]

FIG. 1 is a diagram showing a schematic configuration of a minute projection inspection apparatus to which a pattern position deviation correction method of the present invention is applied.

FIG. 2 is a three-dimensional view of a portion of the inspection optical system of FIG.

FIG. 3 is a diagram showing a state of a beam spot that relatively scans a wafer in XY directions.

FIG. 4 is a diagram showing a state in which a plurality of bumps are regularly arranged on a bump formation line provided along the outer periphery of a chip.

FIG. 5 is a diagram showing a scanning state of laser light on bumps on a bump formation line.

FIG. 6 is a diagram for explaining the detection principle based on the knife edge method adopted in the microprojection inspection apparatus according to this embodiment.

FIG. 7 is another diagram showing the outline of the detection principle based on the knife edge method adopted in the microprojection inspection apparatus of this embodiment.

FIG. 8 is a diagram illustrating an outline of a method for measuring the coordinate position of a bump that is an inspection object by binarizing a detection signal.

FIG. 9 is a diagram showing an operation example in the case of correcting the positional deviation between chips adjacent to each other in the scan (X) direction.

FIG. 10 is a diagram showing an outline of an X-direction positional deviation waveform generated by the positional deviation in FIG.

FIG. 11 is a diagram showing an operation example in the case of correcting the positional deviation between the chips adjacent to each other in the seek (Y) direction.

FIG. 12 is a diagram showing an outline of a seek (Y) direction position shift waveform generated by the position shift of FIG. 11;

13 is a diagram showing an outline of an adjacency comparison process performed based on the coordinate positions of bumps that have been binarized and sampled by the measurement method of FIG. 8 and for which the displacement correction in the X direction and the Y direction of FIGS. Is.

FIG. 14 is a diagram showing a modified example of the wafer surface defect detection optical system of the small protrusion inspection apparatus shown in FIGS. 1 and 2.

15 shows an image processing / control apparatus based on detection signals (reflected light luminance signal) A to D output from the two-division optical sensor of FIG. 14 and voltage (scattered light luminance signal) output from the CCD line sensor. It is a figure which shows the outline of the defect inspection apparatus to perform.

[Explanation of symbols]

151 ... Displacement calculation circuit 152 ... Compositing circuit 153 ... Memory circuit 154 ... XY position shift correction circuit 155 ... Defect detection circuit 306 ... Wafer 400 ... Semiconductor laser light source 401 ... S polarizing plate 402 ... Collimating lens 404 ... Acousto-optic deflector 405 ... Deflector drive circuit 406 ... f.theta. Lens 408 ... Lens 410 ... Polarization beam splitter 412 ... Quarter wave plate 414 ... Objective lenses 416, 418 ... Half mirrors 420, 422 ... Shielding plates 424, 426 ... Imaging lens 428 , 430 ... Two-division optical sensor 432 ... Spatial filter 434 ... Imaging lens 436 ... Slit 438 ... Photomultiplier 440 ... CCD line sensor 500 ... Image processing / control devices 502A to 502D, 506 ... Amplifiers 504, 505, 510 ... Analog -Digital (A /
D) Converter 508 ... Defect detection circuit

─────────────────────────────────────────────────── ─── Continuation of front page (51) Int.Cl. ⁷ Identification code FI theme code (reference) H01L 21/60 H01L 21/92 604T (72) Inventor Tsutomu Takahashi 3-16-3 Higashi, Shibuya-ku, Tokyo Hitachi Electronics engineering Co., Ltd. in the F-term (reference) 2F065 AA03 AA12 AA20 AA24 AA49 BB02 BB03 CC19 CC25 CC26 DD06 EE00 FF44 FF48 FF49 GG06 HH04 HH13 JJ01 JJ09 JJ17 JJ23 LL00 LL04 LL10 LL15 LL21 LL28 LL30 LL33 LL36 LL37 LL57 LL62 LL65 MM03 MM26 PP12 QQ01 QQ03 QQ04 QQ13 QQ23 QQ25 QQ26 QQ27 QQ43 QQ45 2G051 AA51 AB02 AC21 BA10 BC06 CA03 CC07 DA07 EA08 EA11 5B057 AA03 BA02 DA07 DB02 DB05 DB09 DC19 5L096 AA03 AA06 BA03 BA20 GA14 CA08 DA43 FA14 CA08 DA43

Claims (10)

[Claims] 1. A pattern misregistration correction method for aligning repetitive patterns at the same position of adjacent chips on an inspected sample, wherein a detection signal corresponding to reflected light or scattered light from the inspected sample surface is used. A binarized displacement signal corresponding to the position of the pattern is created based on the above, and pixel values along the first direction for the first region in the displacement signal are accumulated and accumulated. A profile along a second direction orthogonal to the first direction is calculated for the first region based on a first direction accumulated value, and the adjacent chips are adjacent to each other based on the calculated second direction profile. 2. A pattern position deviation correcting method, comprising: correcting the deviation width of the pattern in the second direction. 2. The pixel value according to claim 2, wherein each pixel value along the second direction is accumulated for the second region in the displacement signal, and based on the accumulated second direction accumulated value. A profile along the first direction is calculated for the second region, and a deviation in the first direction of the pattern between the adjacent chips is corrected based on the calculated first direction profile. Pattern position deviation correction method. 3. The pattern position shift according to claim 1, wherein the second direction profile is differentiated, and the second direction shift width of the pattern between the adjacent chips is corrected based on the differentiated profile. Correction method. 4. The method according to claim 2, wherein the first and second directional profiles are differentiated, and the first and second directional deviation widths of the patterns of the adjacent chips are corrected based on the differential profile. A characteristic pattern position correction method. 5. The pattern position deviation correcting method according to claim 1, 2, 3 or 4, wherein the pattern corresponds to a bump for connecting an input / output signal provided on a surface of an LSI wafer. . 6. A defect inspection apparatus for performing a defect inspection by comparing repetitive patterns at the same position of adjacent chips on a sample to be inspected, the first inspection unit corresponding to reflected light or scattered light from the surface of the sample to be inspected. Displacement signal creating means for creating a binarized displacement signal corresponding to the position of the pattern based on the detection signal of, and a second detection signal corresponding to reflected light or scattered light from the surface of the sample to be inspected. A combining unit that outputs a combined signal that combines the displacement signal, a memory unit that stores the combined signal output from the combining unit, a combined signal that corresponds to the n-th chip output from the combining unit, and Output from the memory means (n-1)
Pixel values along the first direction are accumulated for the first region in the displacement signal of each of the combined signals corresponding to the th chip, and based on the accumulated first direction accumulated value A profile along a second direction orthogonal to the first direction is calculated for the first region, and corresponds to the n-th or (n-1) -th chip based on the calculated second direction profile. And a second detection signal corresponding to the n-th and (n-1) th chips after correction by the positional deviation correction means, the positional deviation correction means correcting the deviation width of the combined signal in the second direction. And a defect detecting unit for detecting a defect by performing a comparison process on the defect inspection device. 7. The position shift correction means according to claim 6, wherein the second region is included in the second region in the displacement signal.
The pixel values along the direction are accumulated, a profile along the first direction is calculated for the second region based on the accumulated accumulated value in the second direction, and the calculated first value is calculated. A defect inspection apparatus characterized by correcting the first direction deviation width of the combined signal corresponding to the nth or (n-1) th chip based on a direction profile. 8. The differential signal according to claim 6 or 7, wherein the second direction profile is differentiated, and the second signal of the combined signal corresponding to the nth or (n−1) th chip is differentiated based on the differential profile. A defect inspection apparatus characterized by correcting a deviation width in a direction. 9. The method according to claim 7, wherein the first and second directional profiles are differentiated, and the first of the combined signals corresponding to the nth or (n−1) th chip is differentiated based on the differentiated profile. And a defect inspection apparatus which corrects the second deviation width. 10. The defect inspection apparatus according to claim 6, 7, 8 or 9, wherein the pattern corresponds to a bump for connecting an input / output signal provided on the surface of an LSI wafer.