JP2003092441A - Magnetoresistance effect magnetic sensor, magnetoresistance effect magnetic head and their manufacturing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To improve reliability with a high magnetoresistance change and deteriorated average characteristics in a magnetoresistance effect magnetic sensor by a spin valve magnetoresistance effect element structure by a face perpendicular current structure. SOLUTION: The magnetoresistance effect magnetic sensor comprises on a first electrode 11 a spin valve giant magnetoresistance effect (SV type GMR) element film 5 having at least a free layer 1 having a soft magnetic layer, a nonmagnetic layer 2, a fixed magnetic layer 3, and an antiferromagnetic layer 4. A second electrode 12 is formed oppositely to the electrode 11 on the film 5, and the face perpendicular current structure is provided in which a sense current flows between the first electrode and the second electrodes, in such a manner that the surface formed with the SV type GMR element film of the first electrode is set to a surface in which the maximum protrusion height Rpp, that is, a difference between maximum ruggedness of the surface is 10 nm or less. Thus, the reliability can be improved with the high magnetoresistance change and the deteriorated average characteristics.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a magnetoresistive effect element, that is, a magnetoresistive effect type magnetic sensor, a magnetoresistive effect type magnetic head and a manufacturing method thereof, and more particularly to a plane perpendicular current type spin valve type giant magnetoresistive effect element. The present invention relates to a magnetoresistive effect type magnetic sensor, a magnetoresistive effect type magnetic head in which a magnetically sensitive portion is composed of this magnetoresistive effect element, and a manufacturing method thereof.

[0002]

2. Description of the Related Art A magnetoresistive effect type magnetic sensor or a magnetoresistive effect type magnetic head can read an information signal by magnetic recording from the surface of a magnetic recording medium at a large linear recording density. Therefore, it is widely used as a magnetic reading converter for hard disk drives.

A magnetoresistive effect element in a magnetoresistive effect type magnetic sensor or a magnetoresistive effect type magnetic head which has been widely used in the past has a cosine of an angle between a magnetization direction of the magnetoresistive effect element and a sense current direction flowing through the element. This is due to the resistance change due to the anisotropic magnetoresistive effect which changes in proportion to the square.

On the other hand, the giant magnetoresistive effect generated by the spin dependence of electrons between a pair of magnetic layers laminated via a non-magnetic layer and the spin dependence scattering at the interface between different layers, especially the spin valve effect. Is used. Since this spin-valve giant magnetoresistive effect element (hereinafter referred to as SV type GMR element) can obtain a larger resistance change than the anisotropic magnetoresistive effect element described above, it has a high sensitivity in the magnetoresistive effect magnetic sensor or the magnetic sensor. A resistance effect type magnetic head can be constructed.

In the SV type GMR element, a so-called CIP (Current in
Plane) type element, and so-called CPP (Current Perpedicular to Plane) for passing a sense current in a direction perpendicular to the film surface.
There is a type element. However, in recent years, the demand for higher recording density has increased, and when the recording density is set to 50 Gbpsi or more, for example, the track width in the magnetic head is 0.1.
It becomes necessary to reduce the thickness to less than μm. It is extremely difficult to take the above-mentioned CIP type structure against such a narrow track width due to problems in manufacturing the device. Therefore, it is hoped that this type of magnetic head will have a CPP type structure.

[0006]

However, in the magnetic sensor or magnetic head having such a narrow track width, the application of the SV type GMR element having the above-described conventionally known CPP type structure has a sufficient magnetic resistance. There are problems such as a change not being obtained and a decrease in output, poor uniformity of characteristics, low reliability, and low manufacturing yield.

The present inventor came to investigate the cause,
The present invention provides a magnetoresistive effect magnetic sensor, a magnetoresistive effect magnetic head, and a manufacturing method thereof, which can obtain a high rate of resistance change and can improve the uniformity of characteristics, reliability and yield. .

[0008]

In a magnetoresistive effect type magnetic sensor for detecting an external magnetic field according to the present invention, at least a free layer consisting of a soft magnetic layer, a non-magnetic layer and a fixed magnetic layer are provided on the first electrode. A spin valve type giant magnetoresistive element film (SV type GMR element film) having a ferromagnetic layer is formed, and a second electrode is formed on the SV type GMR element film so as to face the first electrode. It has a surface vertical current type structure in which a sense current is applied between the first and second electrodes, and the surface of the first electrode on which the SV type GMR element film is formed has a maximum protrusion height. Rpp, that is, the height difference of the maximum unevenness on the surface is 10 nm or less.

Further, the magnetoresistive effect type magnetic sensor according to the present invention has an SV having at least a free layer made of a soft magnetic layer, a nonmagnetic layer, a pinned magnetic layer and an antiferromagnetic layer on the first electrode. Type GMR element film is formed, and a second electrode is formed on the SV type GMR element film so as to face the first electrode,
It has a surface vertical current type configuration in which a sense current is conducted between the first and second electrodes, and the SV type G of the first electrode
The surface on which the MR element film is formed has an average roughness Ra of 1.0 nm or less.

In the magnetoresistive effect magnetic head according to the present invention, each of the magnetoresistive effect type magnetic sensors according to the present invention is used as a magnetic sensing section.

Further, in the method of manufacturing a magnetoresistive effect type magnetic sensor according to the present invention, a step of polishing the surface of the first electrode and, thereafter, at least a soft magnetic layer on the surface of the first electrode. A step of forming an SV type GMR element film having a free layer, a non-magnetic layer, a pinned magnetic layer and an antiferromagnetic layer, and a step of forming an SV type GMR element film on the SV type GMR element film so as to face the first electrode. The target magnetoresistive effect magnetic sensor is manufactured through the step of depositing and forming the second electrode.

Further, in the method for manufacturing a magnetoresistive effect type magnetic head according to the present invention, the magnetosensitive effect type magnetic sensor structure according to the present invention described above is used in the magnetic sensing section.
A desired magnetoresistive effect magnetic head is manufactured by the above-described method for manufacturing a magnetoresistive effect magnetic sensor.

The above-mentioned magnetoresistive effect type magnetic sensor according to the present invention can obtain a high resistance change and stable characteristics. Further, the magnetoresistive effect magnetic head according to the present invention was able to obtain a high reproduction output and stable reproduction characteristics.

Further, according to the manufacturing method of the present invention, the magnetoresistive effect type magnetic sensor and the magnetoresistive effect type magnetic head having excellent characteristics could be reliably manufactured.

[0015]

1 is a schematic sectional view showing an example of an embodiment of a magnetoresistive effect type magnetic sensor according to the present invention. In this embodiment, on the first electrode 11, S
The V-type GMR element film 5 is formed, and the second electrode 1 is formed thereon.
2 has a formed structure. The surface of the first electrode 11 on which the SV type GMR element film 5 is formed is composed of a polished surface having a maximum protrusion height Rpp of 10 nm or less and / or an average roughness Ra of 1.0 nm or less. .

The SV type GMR 5 formed on the first electrode 11 has at least a free layer 1 made of a soft magnetic material, a nonmagnetic layer 2, a pinned magnetic layer 3 and an antiferromagnetic layer 4. . In the configuration shown in FIG. 1, when the so-called bottom type single type SV type GMR element film 5 is used, the first electrode 11
An antiferromagnetic layer 4, a pinned magnetic layer 3, a nonmagnetic layer 2,
This is the case where the free layer 1 is formed by stacking. However, contrary to the arrangement of FIG. 1, a so-called top-type structure in which the free layer 1 is a lower layer, and the nonmagnetic layer 2, the fixed layer 3, and the antiferromagnetic layer 4 are sequentially laminated thereon may be used.

A stabilizing bias hard magnetic layer 13 for facing or contacting opposite end faces of the free layer 1 and magnetically coupled to the free layer 1 to apply a stabilizing bias magnetic field to the free layer 1. Deploy. The stabilizing bias hard magnetic layer 13 is formed of, for example, a hard magnetic layer having a high electrical resistivity,
No detection magnetic field applied (hereinafter referred to as no-magnetic field state)
In the above, the magnetization direction of the free layer 1 is set to the direction orthogonal to the direction of the detection magnetic field, and the bias magnetic field is applied so that the rotation of the magnetization can be generated by the application of the detection magnetic field.

Alternatively, a similar stabilizing bias hard magnetic layer 13 having good conductivity is electrically insulated from the SV type GMR element film via an insulating film (not shown), and is magnetically coupled to the free layer 1. And are arranged so as to face both end faces thereof. When the stabilizing bias hard magnetic layer 13 having good conductivity is used, although not shown, an insulating layer is formed on the stabilizing bias hard magnetic layer 13 to form an SV.
The second electrode 12 is brought into contact with the type GMR element film 5.

The stabilizing bias hard magnetic layer 13 can be arranged on the insulating layer 14 so as to be arranged so as to face the end surface of the free layer 1 at, for example, approximately the center of its thickness. .

In this structure, a sense current is passed between the first and second electrodes 11 and 12, and the sense current is passed in a direction intersecting the film surface of the SV type GMR element film 5, so-called plane vertical. A magnetoresistive effect type magnetic sensor having a current type configuration is configured.

In the structure of FIG. 1, the SV type GMR element film 5 has a single SV structure.
It can be constituted by a so-called dual type SV type GMR element film in which V is laminated. A schematic cross-sectional view of this embodiment is shown in FIG. Also in this case, the maximum protrusion height Rpp of the first electrode 11 is 10 nm or less and / or Ra is 1.0 nm or less on the polished surface,
The SV type GMR element film 5 is formed.
The type GMR element film 5 is formed, for example, on the first electrode 11 with the first
Antiferromagnetic layer 4a, first pinned magnetic layer 3a, first nonmagnetic layer 2a, common free layer 1 made of a soft magnetic material, second nonmagnetic layer 2b, second pinned magnetic layer 3b, Two antiferromagnetic layers 4b are stacked to form a dual structure.

In this case as well, the above-described hard magnetic layer 13 for stabilizing bias is arranged so as to be in contact with or opposite to both end faces of the free layer 1. In FIG. 2, parts corresponding to those in FIG. 1 are designated by the same reference numerals and redundant description will be omitted.

A magnetic head according to the present invention is a reproducing magnetic head using the above-described magnetoresistive magnetic sensor according to the present invention as a magnetic sensing section, and a schematic sectional view of an example of one embodiment thereof is shown in FIG. Show. In this example, the first electrode 11 is composed of, for example, a magnetic shield / electrode.
Then, the SV type GMR element film 5 is formed thereon. Even in this case, the first magnetic shield / electrode 1
The surface of No. 1 on which the SV type GMR element film 5 is formed is composed of a polished surface having a maximum protrusion height Rpp of 10 nm or less and / or an average roughness Ra of 1.0 nm or less.

The first magnetic shield / electrode 1
An SV type GMR element film 5 having a width W corresponding to the track width of the magnetic head is formed on the surface 1. This SV type G
The MR element film 5 is formed of, for example, the single type SV type GMR element film of the bottom type or the top type (showing the bottom type configuration in FIG. 3) described in FIG. In this case, the hard magnetic layer 1 for stabilizing bias is also used.
3 are arranged on both end faces of the free layer 1 so as to face each other or face each other. A second electrode 12, for example, a magnetic shield / electrode is formed on the SV type GMR element film 5.

First and second magnetic shield / electrode 11
The SV type GMR element film 5 and the stabilizing bias hard magnetic layer 13 are buried between the insulating layers 14 and 12. When the stabilizing bias hard magnetic layer 13 is made of a high resistance material,
As shown in FIG. 3, it can be formed over the stabilizing bias hard magnetic layer 13. However, when the stabilizing bias hard magnetic layer 13 has good conductivity, the stabilizing bias hard magnetic layer 13 can be formed. An insulating layer 14 is coated on the magnetic layer 13, and between the stabilizing bias hard magnetic layer 13 and the SV type GMR element film 5, both are electrically insulated and magnetically coupled. An insulating layer is interposed.

In this case as well, the above-mentioned hard magnetic layer 13 for stabilizing bias is arranged in contact with or opposite to both end faces of the free layer 1. In FIG. 3, parts corresponding to those in FIG. 1 are designated by the same reference numerals, and redundant description will be omitted.

In the configuration of FIG. 3, the SV type GM is used.
In the case where the R element film 5 has a single SV configuration,
So-called dual SV type GM in which a pair of SVs are stacked
It can be composed of an R element film. A schematic cross-sectional view of this embodiment is shown in FIG. Even in this case, the first
Electrode 11 such as the maximum protrusion height R of the magnetic shield and electrode
pp was set to 10 nm or less and / or Ra was 1.
The SV type GMR element film 5 is formed on the polished surface of 0 nm or less.
However, the SV type GMR element film 5 in this case is
On the first electrode 11, the first antiferromagnetic layer 4a, the first pinned magnetic layer 3a, the first nonmagnetic layer 2a, the common free layer 1 made of a soft magnetic material, and the second nonmagnetic layer 2b. , The second pinned magnetic layer 3b and the second antiferromagnetic layer 4b are stacked to form a dual structure.

Also in this case, the above-mentioned hard magnetic layer 13 for stabilizing bias is arranged so as to be in contact with or opposite to both end faces of the free layer 1. 4, parts corresponding to those in FIG. 3 are designated by the same reference numerals, and redundant description will be omitted. Figure 3
In FIG. 4 and FIG. 4, the first and second electrodes 11 and 12 have a magnetic shield and electrode configuration.
These may be formed independently of each other, and the magnetic shield substrate or the magnetic shield layer may be arranged outside the first and second electrodes 11 and 12.

1 to 4, although not shown, each S
A conductive underlayer and a surface layer can be formed under and above the V-type GMR element film 5, respectively.

Next, the basic procedure of the method of manufacturing the magnetoresistive effect type magnetic sensor or the magnetoresistive effect type magnetic head according to the present invention, particularly the formation of the SV type GMR element film 5, will be described with reference to the flow charts of FIGS. 5A and 5B. It will be described with reference. First of all,
As indicated by A, for example, the first electrode 11 is formed on the substrate by sputtering, vapor deposition, or the like. Alternatively, the first electrode 11 is composed of a conductive substrate.

For the first electrode 11, for example, AFM
Surface roughness is measured by (atomic force microscope). According to this measurement, the surface of the first electrode 11 has the above-described maximum protrusion height Rpp of 10 nm or less and / or Ra of 1.0 nm.
In the case of having the following, each laminated constituent film of the SV type GMR element film 5 of the above-mentioned bottom type, top type or dual type is formed on the first electrode 11 by sputtering or the like. Next, the surface property of the SV type GMR element film 5 is similarly measured by, for example, AFM, and it is measured whether or not it has the required surface property.

Alternatively, as shown in FIG. 5B, the first electrode 11 is formed in the same manner as described above, and then, for example, A
The surface property is measured by FM, and the predetermined surface property,
That is, when the maximum protrusion height Rpp is not more than 10 nm and / or Ra is not more than 1.0 nm, the first electrode surface is polished. After that, the second surface roughness measurement is performed by, for example, the AFM measurement similarly. Thus, the operations of surface polishing and AFM measurement are repeated until the surface of the first electrode is measured to have a predetermined surface property. In this way, the surface of the first electrode 11 has the above-mentioned predetermined surface property,
That is, the maximum protrusion height Rpp is 10 nm or less and / or Ra is 1.0 nm or less, and the SV type GM such as the bottom type, the top type or the dual type described above is formed on this surface.
The R element film 5 is formed. Next, the surface property of the SV type GMR element film 5 is similarly measured by, for example, AFM, and it is measured whether or not it has the required surface property.

The first electrode 11 can be made of, for example, a non-magnetic conductive material such as Cu or Au. However, when the first electrode 11 is a metal material having poor hardness and softness, it is not polished. Since it is difficult, the method of FIG. 5A described above is adopted, and the transition to the next step is continued only for the electrode 11 having the predetermined surface property. in this case,
Since the yield may be low, it is desirable that the electrode 11 is generally made of a soft magnetic conductive material such as NiFe, FeAlSi, CoPtPd or the like that can perform good polishing. In this case, the method of FIG. 5B described above can be adopted.

In this way, after it is confirmed that the surface property of the SV type GMR device film 5 has the required surface property, the SV type GMR device film 5 is pattern-etched into a predetermined pattern, for example. Or SV type GM
The R element film 5 is formed in a predetermined pattern when the film is formed.

In the present invention, as described above, the SV
The surface of the first electrode on which the film type GMR element film is formed has a maximum protrusion height Rpp of 10 nm or less and / or an average roughness R.
Although it is 1.0 nm or less, the surface property of the SV type GMR element film is improved by doing so. This will be described with reference to examples.

Example 1 In this case, AlTiC (Al
On a (TiC) substrate, a wafer having a thickness of 2 μm and having a first electrode formed by sputtering was produced. The surface of this first electrode was polished. On this first electrode, SV
Type GMR element film was formed. This film was formed by sputtering. In this example, first, a Ta film having a thickness of 3 nm and a NiFeCr film having a thickness of 3 nm are formed as a base film, an antiferromagnetic layer of PtMn having a thickness of 15 nm and a thickness of 1.9 nm are sequentially formed on the Ta film. 1. A fixed layer having a so-called laminated ferri structure in which a nonmagnetic layer having a thickness of 0.9 nm is interposed between two magnetic layers made of CoFe;
4 nm Cu non-magnetic layer and 1 nm thick CoFe
Layer and a free layer made of a NiFe layer having a thickness of 4 nm, and a protective layer made of Ta having a thickness of 5 nm formed on the free layer.
A V-type GMR element film was formed.

In this structure, the first electrode material was changed, and Samples 1 to 5 listed in Table 1 were prepared. That is, in the sample 1, the first electrode is made of Cu, the sample 2 is made of Au, and the sample 3 is made of NiF.
e, Sample 4 was made of FeAlSi, and Sample 5 was made of CoPtPd.

[0038]

[Table 1]

In Table 1, the measurement results of the surface properties (Rpp and Ra) of the first electrodes of Samples 1 to 5 after the film formation and the polishing are shown, and the surface properties of the SV type GMR element film formed thereon ( R
The measurement results of pp and Ra) are shown.

For polishing the first electrode surface of each of the above-mentioned samples 1 to 5, a polishing apparatus (polishing apparatus, manufactured by Fujikoshi Co., Ltd., POS38S-1S-ACW) having a schematic structure shown in FIG. 6 was used. In this polishing apparatus, a buff cloth table 31 having a so-called buff cloth for polishing is rotated around its central axis as indicated by an arrow a. On the other hand, the vacuum suction chuck 3 is rotated on the buff cross table 31 in the direction of arrow b, which is the same direction as the arrow a, by the rotation shaft 32 parallel to the rotation axis of the buff cross table 31.
3 is provided, the above-mentioned wafer is adsorbed and held by the vacuum adsorption chuck 33, and the first electrode of the wafer is slidably rotated on the buff cross. Although not shown, the rotary shaft 32 is reciprocally oscillated by the work arm in the radial direction of the buff cross table 31, for example, as shown by an arrow c, and the above-mentioned wafer is brought into sliding contact with the buff cross with a required contact pressure. Is done like this.

Further, as shown by an arrow d, the tip of the correction ring brush 34 which rotates in the same direction as the buff cross table 31 and the rotary shaft 32 is brought into sliding contact with the buff cross table 31. A nozzle 35 for dripping and supplying the polishing liquid is arranged on the buff cross table 31. With this, the polishing liquid supplied onto the buff cross table 31 is evenly distributed to the buff cross table 31 by a correction ring. The first electrode of the wafer held by the vacuum suction chuck is polished by the buff cloth by unfolding and rotating by the arrow b, and simultaneously swinging in the direction of the arrow c.

With this polishing apparatus, the first electrode was polished under the condition A and then under the condition B. The polishing conditions A and B are those listed in Table 2.

[0043]

[Table 2]

Further, the surface properties after polishing in Table 1 show the measurement results after performing the conditions A and B in Table 2.

In this case, Samples 1 and 2 could not be subjected to the above-described polishing work because the electrode materials Cu and Au were inferior in hardness, and their surface properties were left as they were. As can be seen from Table 1, when the first electrode, which is the surface on which the SV type GMR element film is formed, has excellent surface properties, the surface properties of the SV type GMR element film formed on the first electrode follow this. Shows excellent surface properties.

Next, the relationship between the surface property of the first electrode 11, that is, the maximum protrusion height Rpp and the rate of change in resistance of the average roughness Ra was examined by using Example 2.

Example 2 In this case, as shown in the schematic sectional view of FIG. 7, a conductive film having a thickness of 2 μm was sputtered on the AlTiC substrate 41 to form the first electrode 11. On this first electrode 11, an SV type GMR film having the same structure as in Example 1 was formed and patterned to a size of 0.1 μm in width and 0.1 μm in depth. The insulating layer 1 is formed around the patterned SV type GMR element film 5.
4 was arranged, and the second electrode 12 was formed on these SV type GMR element films 5. In this configuration, the first electrode 11
Are samples 6 to 8 made of Cu having different surface properties shown in Table 3 and NiFe, and the same surface as in Example 1 was polished by using the polishing apparatus described in FIG. , Rpp and Ra were selected to prepare samples 9 to 11.

For these samples 6 to 11, a sense current was passed between the first and second electrodes 11 and 12, that is, in the direction perpendicular to the film surface, and the resistance change rate was measured. The measurement results are shown in Table 3.

[0049]

[Table 3]

FIG. 8 and FIG. 9 plot the relationship between this resistance change rate and the maximum protrusion height Rpp and average roughness Ra of the surface of the first electrode 11. According to FIG.
It can be seen that the resistance change rate rapidly increases when Rpp is 10 nm or less. Further, according to FIG. 9, it can be seen that the resistance change rate rapidly increases when Ra is 1.0 nm or less.

Next, an example of a method of manufacturing the magnetoresistive effect magnetic head according to the present invention, which uses the magnetoresistive effect type magnetic sensor according to the present invention as a magnetic sensing portion, will be described with reference to the process diagrams of FIGS. . As shown in FIG. 10A, a wafer with a substrate 1 made of, for example, AlTiC is prepared, and on this,
For example, the soft magnetic conductive material described above is formed into a film having a thickness of 2 μm to form a magnetic shield / electrode for forming the first electrode 11. The surface of the electrode 11 is polished by the polishing apparatus described with reference to FIG. 6, and Rpp is 10 nm or less and / or R
a is 1.0 nm or less.

An SV type GMR element film is formed on the first electrode 11 as shown in FIG. 10B. An underlying film (not shown) as described in Example 1 is formed as necessary, and on top of this, for example, in the bottom type structure, the antiferromagnetic layer 4, the pinned magnetic layer 3, the nonmagnetic layer 2, The free layer 1 is sequentially formed, and a protective film (not shown) is formed on the entire surface of the free layer 1, if necessary.

On this SV type GMR element film, as shown in FIG. 10B, for example, a stripe-shaped mask 42 extending in the direction orthogonal to the paper surface and having a width corresponding to the track width is formed. The mask 42 is formed of, for example, a photoresist layer, and is formed into stripes by pattern exposure and development.

As shown in FIG. 10C, the SV type GMR element film is etched using the mask 42 as a mask to form a stripe having a width W corresponding to the finally obtained track width. Further, an insulating layer 14 made of Al ₂ O ₃ , SiO ₂ or the like is formed over the entire surface by sputtering or the like, and a high-resistance hard magnetic layer 13 made of, for example, Coγ-Fe ₂ O ₃ is sputtered over the insulating layer 14. .

Thereafter, as shown in FIG. 11A, the mask 4
2 is removed, and the insulating layer 14 and the hard magnetic layer 13 on the mask 42 are selectively removed (lifted off).

As shown in FIG. 11B, stripe-shaped S
Exposing unnecessary portions of the V-type GMR element film 5 and the hard magnetic layer 13 to the outside, the SV-type GMR element film 5 and the hard magnetic layer 1 are exposed.
A mask 43 is formed on the substrate 3 by applying photoresist, pattern exposure and development.

As shown in FIG. 11C, using the mask 43 as an etching mask, the hard magnetic layer 13 exposed to the outside is removed by etching, and an insulating layer 14 of Al ₂ O ₃ , SiO ₂ or the like is entirely formed by sputtering or the like. To do.

As shown in FIG. 12A, the mask 43 is removed, the insulating layer 14 thereon is removed, and the surface of the SV type GMR element film 5 is exposed to the outside.

As shown in FIG. 12B, an SV having a required track width and a required depth length is formed by forming a magnetic shield / electrode 12 constituting a second electrode of a soft magnetic conductive material by sputtering or the like. A plurality of magnetic head elements having the GMR element film formed thereon are formed on a common wafer, and each magnetic head element is divided as shown in the front view of FIG. 12C. And by heat treatment in a magnetic field,
The antiferromagnetic layer 4 and the pinned magnetic layer 3 are magnetized in a desired direction and the hard magnetic layer is magnetized in a desired direction.

In this way, the desired magnetoresistive effect magnetic head 44, that is, the reproducing magnetic head is constructed. The front surface 45 of the reproducing magnetic head 44 is polished so as to be in contact with or opposite to the magnetic recording medium.
The front end of the SV type GMR element film 5 is exposed.

In the case of constructing a floating magnetic head, for example, the substrate 41 can be constructed as a flying slider.

In addition, the present invention is not limited to the above-described example, such as a multi-head structure in which a plurality of head elements are arranged on a common substrate 41, and various modifications and changes can be made. It can be carried out.

In the example shown in FIG. 12, the SV type GMR element film 5, that is, the magnetic sensitive portion is formed facing the front surface 45, that is, the surface facing or facing the magnetic recording medium. This SV type GMR element film 5 is formed on the front surface 4
5, a magnetic flux guide layer magnetically coupled to at least the free layer 1 of the SV type GMR element film 5 is provided, and the front end of the magnetic flux guide layer is made to face the front surface 45, and It is also possible to adopt a configuration in which the signal magnetic field recorded on the recording medium by the recording portion is introduced into the SV type GMR element film 5 through the magnetic flux guide layer.

Further, the recording / reproducing magnetic head can be constructed by forming an electromagnetic induction type thin film recording head integrally with the reproducing head using the magnetoresistive magnetic head according to the present invention. FIG. 13 shows a schematic vertical cross section of an example of the recording / reproducing magnetic head. In this example, for example, on the second magnetic shield / electrode 12 having a structure in which an electromagnetic induction type thin film type recording magnetic head 46 is integrally formed on the magnetoresistive effect type magnetic reproducing head 44 described in FIG. Is formed with a non-magnetic layer (insulating layer) 47 that faces the front surface and forms the magnetic gap g of the recording head, and a thin film coil 48 made of a conductive layer is formed on the non-magnetic layer 47. 49
Is covered by.

At the center of the thin-film coil 48, a through hole is formed through the non-magnetic layer 47 and the insulating layer 49 to the second shield / electrode 12 made of a soft magnetic material. 2 magnetic shield and electrode 12
Magnetic core layer 50 comprising a soft magnetic layer magnetically coupled to
Is formed with its front end facing the front surface, and the magnetic core layer 50 and the second magnetic shield / electrode 12 form the recording magnetic head 46 in which a closed magnetic path having a magnetic gap g is formed. A protective layer 51 is formed on the recording magnetic head 46 by coating. In this way, the recording / reproducing magnetic head can be constructed.

As described above, according to the present invention, the magnetoresistance effect type magnetic sensor having a high resistance change rate by controlling the surface property of the surface forming the SV type GMR element film of the first electrode, the magnetic sensor A resistance effect type magnetic head can be constructed.

[0067]

As described above, according to the present invention, it is possible to reliably obtain the magnetoresistive effect type magnetic sensor having an excellent rate of change in resistance, or the magnetoresistive effect type magnetic head using the magnetoresistive effect type magnetic sensor. it can. Therefore, according to the present invention,
It is possible to obtain a magnetoresistive effect type magnetic sensor and a magnetoresistive effect type magnetic head with uniform characteristics, high reliability and high yield.

[Brief description of drawings]

FIG. 1 is a schematic sectional view of an example of a magnetoresistive effect type magnetic sensor according to the present invention.

FIG. 2 is a schematic sectional view of another example of the magnetoresistive effect magnetic sensor according to the present invention.

FIG. 3 is a schematic sectional view of an example of a magnetoresistive effect magnetic head according to the present invention.

FIG. 4 is a schematic cross-sectional view of another example of the magnetoresistive effect magnetic head according to the present invention.

FIG. 5 is a flowchart showing a basic procedure of forming an SV type GMR element film according to the manufacturing method of the present invention.

FIG. 6 is a schematic configuration diagram of an example of a polishing apparatus used in the manufacturing method of the present invention.

FIG. 7 is a sectional view of a sample used for explaining a magnetoresistive effect magnetic sensor according to the present invention.

FIG. 8 is a diagram showing the measurement results of the relationship between the resistance change rate of the SV type GMR element film and the maximum protrusion height Rpp of the first electrode used for explaining the present invention.

FIG. 9 is a diagram showing the measurement result of the relationship between the resistance change rate of the SV type GMR element film and the average roughness Ra of the first electrode used for explaining the present invention.

10A to 10C are process diagrams (1) of an example of the production method of the present invention.

11A to 11C are process diagrams (2) of an example of the production method of the present invention.

12A to 12C are process diagrams (3) of an example of the manufacturing method of the present invention.

FIG. 13 is a schematic vertical cross-sectional view of an example of a recording / reproducing head using a magnetoresistive effect magnetic head according to the present invention.

[Explanation of symbols]

1 ... Free layer, 2 ... Non-magnetic layer, 2a, 2b ...
First and second non-magnetic layers, 3 ... Fixed magnetic layers, 3a, 3
b ... First and second pinned magnetic layers, 4 ... Antiferromagnetic layer, 4a, 4b ... First and second pinned magnetic layers, 5 ...
SV type GMR element film, 11 ... First electrode, 12 ...
..Second electrode, hard magnetic layer for 13-hand stabilizing bias, 1
4 ... Insulating layer, 31 ... Buff cross table, 32
... Rotary shaft, 33 ... Vacuum suction chuck, 34 ...
-Correcting ring brush, 35 ... Nozzle, 41 ... Substrate, 42, 43 ... Mask, 44 ... Reproducing magnetic head, 45 ... Front surface, 46 ... Recording head, 47 ...
..Non-magnetic layer, 48 ... Thin film coil, 49 ... Insulating layer, 50 ... Magnetic core layer, 51 ... Protective layer

Claims (8)

[Claims] 1. A giant magnetoresistive element film having at least a free layer made of a soft magnetic layer, a nonmagnetic layer, a pinned magnetic layer and an antiferromagnetic layer is formed on the first electrode, and the giant magnetoresistive element film is formed. A second electrode is formed on the magnetoresistive effect element film so as to face the first electrode, and a sense current is applied between the first and second electrodes to form a vertical surface current type structure; A magnetoresistive effect type magnetic sensor, wherein a surface of the first electrode on which the giant magnetoresistive effect element film is formed has a maximum protrusion height Rpp of 10 nm or less. 2. A giant magnetoresistive effect element film comprising at least a free layer composed of a soft magnetic layer, a nonmagnetic layer, a pinned magnetic layer and an antiferromagnetic layer is formed on the first electrode, and the giant magnetoresistive element film is formed. A second electrode is formed on the magnetoresistive effect element film so as to face the first electrode, and a sense current is applied between the first and second electrodes to form a vertical surface current type structure; A magnetoresistive effect type magnetic sensor, wherein the surface of the first electrode on which the giant magnetoresistive effect element film is formed has an average roughness Ra of 1.0 nm or less. 3. The magnetoresistive effect type magnetic sensor according to claim 1, wherein the first electrode is made of a soft magnetic conductive material. 4. A giant magnetoresistive element film in which a magnetically sensitive portion has at least a free layer composed of a soft magnetic layer, a nonmagnetic layer, a fixed magnetic layer and an antiferromagnetic layer on a first electrode. A surface vertical current type in which a second electrode is formed on the giant magnetoresistive element film so as to face the first electrode, and a sense current is applied between the first and second electrodes. A magnetoresistive effect magnetic head having a structure, wherein the surface of the first electrode on which the giant magnetoresistive effect element film is formed has a maximum protrusion height Rpp of 10 nm or less. 5. A giant magnetoresistive element film in which a magnetically sensitive portion has at least a free layer made of a soft magnetic layer, a nonmagnetic layer, a pinned magnetic layer and an antiferromagnetic layer on a first electrode. A surface vertical current type in which a second electrode is formed on the giant magnetoresistive element film so as to face the first electrode, and a sense current is applied between the first and second electrodes. A magnetoresistive effect magnetic head having a structure, wherein the surface of the first electrode on which the giant magnetoresistive effect element film is formed has an average roughness Ra of 1.0 nm or less. 6. The magnetoresistive effect magnetic head according to claim 4, wherein the first electrode is made of a soft magnetic conductive material. 7. A step of polishing the surface of the first electrode, and thereafter, a free layer composed of at least a soft magnetic layer, a nonmagnetic layer, a pinned magnetic layer, and an antiferromagnetic layer on the surface of the first electrode. A step of forming a giant magnetoresistive effect element film having a layer, and a step of depositing a second electrode on the giant magnetoresistive effect element film so as to face the first electrode. A method of manufacturing a magnetoresistive effect type magnetic sensor, comprising: 8. A step of polishing the surface of the first electrode, and thereafter, a free layer composed of at least a soft magnetic layer, a nonmagnetic layer, a pinned magnetic layer, and an antiferromagnetic layer on the surface of the first electrode. A step of forming a giant magnetoresistive effect element film having a layer, and a step of depositing a second electrode on the giant magnetoresistive effect element film so as to face the first electrode. A method of manufacturing a magnetoresistive effect magnetic head, comprising forming a magnetically sensitive portion by means of: