JP2003088749A - Production method for semiconductor particle - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a novel, simple, and convenient method for producing semiconductor particles uniform in particle size. SOLUTION: This production method includes a fine particle formation process wherein a first solution of a compound at least containing an element of the group II or III and a second solution of a compound at least containing an element of the group V or VI are mixed and reacted with each other in an addition tank to form particles comprising an element of the group II or III and an element of the group V or VI. A solvent is put into the addition tank in advance. In the addition tank, a mixing chamber having an opening is arranged below the liquid level of the solvent, and the first and second solutions, each under flow control, are supplied into the mixing chamber.

Description

Detailed Description of the Invention

[0001]

TECHNICAL FIELD The present invention belongs to the technical field of a novel method for producing semiconductor particles having a uniform particle size.

[0002]

2. Description of the Related Art The progress of the semiconductor industry has been remarkable, and nowadays almost all devices and systems cannot be realized without semiconductors. Silicon is the mainstream of semiconductors today, but compound semiconductors have been drawing attention in recent years due to the need for higher speeds. For example, in the field of optoelectronics, compound semiconductors play a leading role, and in research on light emitting elements, photoelectric conversion elements, various lasers, nonlinear optical elements, etc., compound semiconductors occupy most of them. For example, Zn, Cd
Group II elements such as O and S and group VI elements such as O and S are combined
II-VI group compounds are known to have excellent emission (fluorescence) characteristics, and are expected to be applied to various fields.

By the way, these materials are generally used as particles having a uniform particle size in order to exert their performance more effectively. Further, in recent years, the need for material development based on nanotechnology has been strongly recognized, and it has been desired that the particles of the material be made finer and more uniform. Here, nanotechnology refers to new functions and excellent performance by manipulating and controlling atoms and molecules in a microscopic world on the order of 1,000,000th of a million, utilizing the material properties (for example, quantum effect) peculiar to nanosize. Refers to the technology of expressing. Nanotechnology itself is important not only as a research field, but also in applied research fields such as light emitting devices, photoelectric conversion devices, various lasers, and nonlinear optical devices. Many manufacturing and process technologies are expected to shift from conventional to nanotechnology during the 21st century. Based on these circumstances, there are many literatures that are studying methods for synthesizing nano-sized semiconductor particles and their application examples. Nano-sized semiconductor particles can be synthesized by, for example, a precipitation method by solution mixing, a particle growth method by particle surface capping, etc. However, for example, only a polydisperse particle can be obtained by an ordinary precipitation method. Moreover, although monodisperse particles can be obtained from the surface capping method by fractionating the particles, a complicated method of the experimental procedure and long working time cannot be avoided, and a simple method for solving these problems is desired.

[0004]

The present invention has been made in view of the above problems, and provides a new and simple method for producing semiconductor fine particles, and further a method for producing semiconductor fine particles having a uniform particle diameter. This is an issue. In particular, it is an object of the present invention to provide a method for producing II-VI semiconductor fine particles, which has a narrow particle size distribution and is excellent in dispersibility.

[0005]

In order to solve the above problems, the method for producing semiconductor fine particles according to the present invention comprises at least II.
A first solution of a compound containing a group III or group III element and a second solution of a compound containing at least a group V or group VI element are mixed and reacted in an addition tank, and a group II or group III element and V A mixing chamber including a fine particle producing step of producing fine particles made of Group VI or Group VI element, wherein the addition tank is preliminarily injected with a solvent, and the inside of the addition tank has an opening through which the solvent can flow. Is disposed below the liquid surface of the solvent, and the first solution and the second solution are supplied to the mixing chamber by controlling the flow rate of each.

As one aspect of the present invention, a stirring flow for mixing the supplied first solution and the second solution is formed in the mixing chamber, and the generated fine particles are mixed in the mixing chamber. A method for producing semiconductor fine particles is provided, in which a liquid flow is formed to be discharged from the chamber to the outside of the mixing chamber through the opening.

In a preferred embodiment of the present invention, the first solution contains a group II element, the second solution contains a group VI element, and the step of forming fine particles comprises fine particles containing a group II element and a group VI element. Or a transition metal or a rare earth metal, wherein any one of the first solution and the second solution contains a transition metal or a rare earth metal, or a transition metal or a rare earth metal. Any of the above characterized in that a third solution containing a metal is supplied together with the first solution and the second solution, and in the step of producing fine particles, fine particles activated by a transition metal or a rare earth metal are produced. A method for producing such semiconductor fine particles;

In a preferred aspect of the present invention, any one of the solvent, the first solution and the second solution contains an anionic surfactant and / or a nonionic surfactant. Any one of the above methods for producing semiconductor fine particles, wherein any one of the solvent, the first solution and the second solution contains a polymerizable organic compound or a polymer. A method for producing fine semiconductor particles;

[0009]

BEST MODE FOR CARRYING OUT THE INVENTION The manufacturing method of the present invention will be described below. The method for producing semiconductor fine particles of the present invention is a method in which at least one selected from the group of compounds containing a group II or group III element and at least one selected from the group of compounds containing a group V or group VI element are used as a solution. Including the steps of adding fine particles to a liquid (solvent) and mixing and reacting them while controlling the flow rate in each state. In the present invention, the solvent is previously injected into the addition tank, and each of the solutions is supplied into the solvent while controlling the flow rate. Compared with the case where the solution is dropped from above the liquid surface, the generated particles can be made into fine particles and the particle diameter can be made uniform.
This method is similar to the method called the double jet method used in the production of emulsions for photographic films, and by applying this method in the production of semiconductor particles, a desired grain size and a uniform grain size can be obtained. It is possible to manufacture semiconductor fine particles having

In the present invention, the supply flow rate of each solution is preferably determined based on the stoichiometric ratio. Therefore, the supply flow rate of each solution is such that the molar ratio of elements contained in each solution supplied per unit time (molar ratio of group II or group III element to group V or group VI element) is stoichiometric. It is preferable to control so as to be equal to the ratio. Therefore,
In a mode in which two types of solutions containing elements that react at a ratio of 1: 1 are mixed, the supply flow rates are controlled so that the addition amounts of the two types of solutions are the same per unit time.

The method of controlling the supply flow rate of each solution is not particularly limited, and various flow rate control methods can be used. For example, orifice, gas pressurizer,
Alternatively, each solution can be supplied while controlling the flow rate by using a pump, a valve or the like that can adjust the rotation speed. For detection of the supply flow rate, for example, when a solution is supplied into a liquid by a supply pipe, a method of mounting a sensor in the middle of the supply pipe for detection and the like are common.

As a preferred embodiment of the production method of the present invention,
A mode in which the flow rate of at least one solution is controlled and supplied to the mixing chamber based on the detected amount obtained while detecting the state in the addition tank is mentioned. For example, there is a method of continuously monitoring the electrode potential inside the addition tank and feeding back or amplifying the deviation of the potential as a signal to control the addition flow rate of the solution to keep the potential inside the addition tank constant. Can be adopted. Examples of the target to be monitored include, but are not limited to, the potential, pH, absorbance of the solution in the addition tank.

In the present invention, the mixing chamber is arranged below the liquid surface of the solvent in the addition tank (that is, the position where the solvent is contained in the solvent), and each of the solutions is supplied to the mixing chamber. preferable. By mixing each of the solutions using a mixing chamber arranged in a solvent, semiconductor fine particles having a more uniform particle size can be obtained. Since the mixing chamber is arranged below the liquid surface of the solvent injected into the addition tank and has an opening, the solvent injected into the addition tank from the opening is inside the mixing chamber. Inflowing, the inside of the mixing chamber is filled with the solvent. The two or more solutions supplied to the mixing chamber are diluted with the solvent in the mixing chamber and rapidly and uniformly mixed by the stirring flow formed inside the mixing chamber. As described above, by using the mixing chamber to mix the two or more kinds of solutions, more rapid and uniform mixing is possible, which contributes to the reduction in the particle size of the generated particles and the homogenization. . By disposing the stirring blade in the mixing chamber, a stirring flow can be easily formed in the mixing chamber.

If the produced fine particles remain in the mixing chamber, they may be combined with other produced fine particles or further react with the solution supplied to the mixing chamber to form large particles. In order to prevent this and more stably obtain uniform particles having a small particle size, a stirring flow is formed in the mixing chamber to rapidly react the solution, and the particles produced by the reaction are It is preferable to form a liquid flow in the mixing chamber, which is quickly discharged from the mixing chamber through the opening. Thus, when a liquid flow for discharging the generated fine particles from the mixing chamber is formed together with the stirring flow in the mixing chamber,
The fine particles are quickly discharged to the outside of the mixing chamber, and it is possible to prevent the fine particles from becoming large particles. For example, an opening is formed at each of two locations (for example, a lower end and an upper end) of a mixing chamber (for example, a cylindrical shape and a polygonal cylinder), and the solution is supplied from one opening (for example, an opening at the lower end). Along with the supply, a liquid flow heading to another opening (opening at the upper end) can be formed in the mixing chamber, and the generated particles can be quickly discharged to the outside of the mixing chamber. The liquid flow may be formed by a second stirring blade arranged in the mixing chamber. The shape of the second stirring blade is designed so that a liquid flow in a desired direction can be formed by stirring.

An example of an addition tank having a mixing chamber that can be used in the manufacturing method of the present invention is described in, for example, FIGS. 5 to 10 of Japanese Patent Publication No. 55-10545. The mixing chamber described in the above-mentioned publication serves to enhance the homogenization of particles by simultaneously diluting the reaction solution, completely mixing in the addition tank and homogenizing the solvent (bulk solution) in the addition tank. is there.
In the production method of the present invention, as long as the same effect is provided by the mixing chamber, there is no particular limitation on the structure and the like, and an aspect using the mixing chamber described in the above publication,
Any of the modes using a mixing chamber other than the examples showing the same operation is also included. Furthermore, in the present invention, a "mixing chamber"
Is to be interpreted in a broad sense, and there is no particular limitation on the shape as long as it is arranged inside the addition tank and exhibits the same operation as described above.

In the production method of the present invention, the group II or group III element and the group V or VI element contained in the solution supplied to the mixing chamber become the constituent elements of the fine particles produced. . For example, semiconductor fine particles of a II-VI group compound can be manufactured by using a solution of a compound containing a group II element and a solution of a compound containing a group VI element. The solution is a solution of a compound containing at least one group II or group III element, and a group V or
It is a solution of a compound containing at least one element of Group VI. The compound used is not particularly limited, and various compounds can be used depending on the desired elemental composition of the semiconductor fine particles. For example, examples of compounds containing Group II elements include halides (for example, chlorides) of each element, salts of various acids (for example, sulfates, acetates, nitrates, phosphates,
Examples thereof include perchlorates, organic acid salts, etc.), complex salts (acetylacetonato complex, etc.), and organic metal compounds (eg, dimethyl compound, diethyl compound, etc.). Examples of the compound containing a Group III element include a halide (eg, chloride), a complex salt (eg, acetylacetonato complex, etc.), and an organometallic compound (eg, trimethyl compound, triethyl compound, etc.). It may be an anhydride or a hydrate. Examples of the compound containing a group V or VI element include alkali metal salts (sodium salt, potassium salt, etc.) of each element, and organic silicon compounds (trimethylsilyl salt, etc.). As the sulfur-containing compound among the compounds containing the group VI element, sodium thiosulfate, thiourea, thioacetamide and the like can be used in addition to the above. The concentration of the raw materials used in these reactions varies depending on the solvent species used in the reaction, but is 1 × 10 ⁻⁶ mo
1 / L to 1 mol / L is preferable, and 1 × 10
^-4 mol / L to 1 mol / L is more preferable.

The solvent of the solution may be either a hydrophilic solvent or a hydrophobic solvent, and any solvent can be used as long as it can dissolve the starting compound. Examples of usable solvents are water, alcohols (eg methanol, ethanol etc.), polyhydric alcohols (eg ethylene glycol, diethylene glycol, polyethylene glycol etc.), glycol derivatives (eg ethylene glycol monomethyl ether etc.), amines. (For example, ethanolamine, hexadecylamine, hexaoctylamine, ethylenediamine, pyridine, etc.), phosphine and its oxides (for example, trioctylphosphine, trioctylphosphine oxide, trihexylphosphine, etc.), mercapto compound (3-mercaptotrimethyl). Siloxane, mercaptoethanol, 1-mercapto-2.3 propanediol, etc.), polar solvent (eg formamide,
N, N-dimethylformamide, acetonitrile, acetone and the like). The solvent may be one kind or a combination of two or more kinds. However, when two or more kinds of solvents are used, hydrophilicity or hydrophobicity is considered in consideration of solubility and reactivity of raw materials. It is preferable to use them in combination. In addition, the same thing is illustrated also about the solvent previously inject | poured in the said addition tank, and also various additives may be added to this solvent.

By adding an activator to the above solution, a part of the metal atom is replaced by the activator, and the activated metal fine particles in which the substituted metal functions as an emission center are produced. it can. For example, by substituting a zinc atom in zinc sulfide for another metal atom, the substituted metal can function as an emission center. It is known that the activatable semiconductor fine particles emit light peculiar to the kind of the activator atom, and it is also possible to emit blue, green and red colors. As the activator for zinc sulfide, metals such as aluminum, manganese, copper, silver, cerium, terbium and europium are effective. These activators may be used in combination with fluorine, chlorine or the like, if necessary for compensating the charge. The activator element is preferably contained in any one of the reaction solutions (particularly preferably in a solution containing a group II or group III element), but the activator is separately prepared. It is also possible to supply the solution containing the element to be supplied to the mixing chamber together with the solution containing the group II or III element and the solution containing the group V or VI element.

In the present invention, it is preferable to add a surfactant to the solution. Examples of usable surfactants include anionic surfactants such as fatty acid salts, alkyl sulfate ester salts, alkylbenzene sulfonates, alkylnaphthalene sulfonates, dialkyl sulfosuccinates, alkyl phosphate ester salts, and naphthalene sulfonates. Formalin condensate, polyoxyethylene alkyl sulfate ester salt, etc .; Nonionic surfactants such as polyoxyethylene alkyl ether, polyoxyethylene alkyl allyl ether, polyoxyethylene fatty acid ester, sorbitan fatty acid ester, polyoxyethylene sorbitan fatty acid Esters, polyoxyethylene alkylamines, glycerin fatty acid esters, oxyethyleneoxypropylene block copolymers and the like can be preferably used. These surfactants are
One kind may be used alone, or two or more kinds may be used in combination. The surfactant may be added to the dispersion system after the particles are formed.

The amount of the surfactant added varies depending on the size of the particles to be produced, but is usually 200 parts by mass or less in terms of the amount of finished particles.
It is more preferably 100 parts by mass or less. The concentration of the surfactant used is preferably 20% by mass or less, and 10% by mass
The following is more preferable.

In the present invention, an organic binder can be added to the solution. When an organic binder is added, the composite of the organic binder can be adsorbed on the surface of the generated particles, and it is possible to prepare a dispersion having excellent dispersibility as well as suppressing aggregation of particles. Become. Examples of usable organic binders include esters such as acrylic acid, methacrylic acid and methyl methacrylate, homopolymers or copolymers of vinyl monomers such as vinyl acetate and styrene, polyethylene oxide, polyvinyl alcohol, polyvinylpyrrolidone and polyacrylic. Acids, polyacrylamide, polymethylmethacrylate, copolymers of acrylonitrile and styrene, latexes such as styrene-butadiene,
Examples include polycarbonate, fluorinated or deuterated polymethylmethacrylate, polyimide, epoxy polymer, sol-gel polymer and the like. The polymer used for the organic binder may be a homopolymer or a copolymer, and if necessary, a photocurable resin polymer may be used alone or in combination. Similar to the surfactant, one kind or two or more kinds of these additives may be used in combination, and in addition to the addition to the solution, the additives may be added to the dispersion system after particle formation.

The amount of the organic binder added is preferably 500 parts by mass or less in terms of the amount of finished particles. The concentration of the organic binder used is preferably 10% by mass or less and more preferably 5% by mass or less with respect to the solvent to be dissolved.

It is also possible to form a polymer composite by adding a polymerizable organic compound (for example, a vinyl monomer) or a polymer to the solution or the like and then polymerizing the compound. For example, 2,2'-azobisisobutyronitrile (A
A polymerization initiator such as IBN) can be added to the solution together with the monomer to initiate the polymerization, or the polymerization can be initiated by irradiation with ultraviolet light. AI
When BN is used, the degree of polymerization can be adjusted with a radical scavenger, if necessary. When the polymerization is initiated by irradiation with ultraviolet light, the wavelength of ultraviolet light used for these compounds is preferably 300 nm to 380 nm. The vinyl monomer may be added not only to the above solution, but also to a solvent that has been previously injected into the addition tank, or may be added to the dispersion system after particle formation.

It is also possible to add an adsorbing compound (dispersant) to the solution or the like to generate particles whose surface is modified with the adsorbing compound. As the adsorptive compound,
_{-SH, -CN, -NH 2, -SO} 2 OH, -SOOH,
Compounds containing an adsorptive group such as —OPO (OH) ₂ and —COOH are effective. As the dispersant, a hydrophilic polymer compound can be used, and for example, hydroxyethyl cellulose, polynylpyrrolidone, polyethylene glycol, etc. can be used.

The surface of the particles of the present invention may be surface-treated in order to improve the dispersibility of the particles in the above-mentioned polymer. For example, surface thiol modification (M.
L. Steigerwald et al. Am. Chem.
Soc. , Vol. 110, item 3046, published in 1988), photocatalytic reaction method (T. Hayashi et al. J. P.
hys. Chem. , Vol. 96, Item 2866, 1992
It can be used, but is not limited to this.

In addition, various additives such as an antistatic agent, an antioxidant, a UV absorber and a plasticizer may be used in the solution or the like, if necessary. In addition, these particles are
When labeled with an antibody, an antigen, etc., it is particularly preferable to make the particle surface hydrophilic with an amine, a thiol or the like before use.

Since the dispersion liquid of the fine particles obtained by the fine particle producing step contains excess cations or anions in the liquid, it is subjected to a treatment for removing these and then used for various purposes. Is preferred. The excess cations and anions can be removed by allowing the particles to settle by centrifugation and separating them from the liquid. It can also be removed by a known ion exchange method using an ion exchange resin or an ultrafiltration membrane. By removing the surplus cations or anions, it is possible to suppress the particles from aggregating, which is particularly effective when the adsorbing compound or the like is not added.

The obtained particles can be subjected to an aging step. Aging has two effects. One is that the crystallinity of the particles themselves is enhanced, and the other is that the particle size can be controlled (usually the particle size is increased). As the aging method, for example, a method of heating the resulting mixed solution or heating under pressure or a method of heating the obtained particle powder is used.

According to the manufacturing method of the present invention, for example, JA
m.Chem.Soc.1993,115,8706-8715 Synthesis and Charac
terization of Nearly Monodisperse CdE (E = S, Se, Te) S
emiconductor Nanocrystallites ； Surface Chemistry Vol22.No.
5. Particles as described in 5. Organic / Inorganic Composite ZnS: Mn Nanocrystal Phosphor Phosphorescence Mechanism and Local Structure Analysis can be obtained.

The semiconductor fine particles manufactured by the manufacturing method of the present invention include an optical switching element described in Japanese Patent Laid-Open No. 2000-321607, an optical memory element using interference of multiple scattered light described in 2000-99986, and the same 2000.
Optical memory device described in Japanese Patent Publication No. 81682/2001
EL device described in JP-A-18677, 2000-17
Optical recording medium described in Japanese Patent No. 8726, JP-A-07-957
It can be used for photoelectric conversion elements described in JP-A No. 74 and JP-A-07-75162, diagnostic elements described in British Patent No. 2342651, analysis elements described in US Pat. No. 5,590,479, and the like.

For the above-mentioned use, the obtained semiconductor fine particles are
It is also possible to disperse in a solvent together with a binder or the like to prepare a dispersion, use the dispersion to form a thin film, and then provide the thin film. For the production of a thin film, application methods such as roller method and dip method; metering method such as air knife method and blade method; and application method and metering method can be applied to the same area. As a method, Japanese Examined Patent Publication 58-458
Wire bar method disclosed in US Pat.
No. 681294, No. 2761419, No. 276179.
The slide hopper method, the extrusion method, the curtain method, etc. described in each specification such as No. 1 can be used. It is also preferable to use a general-purpose machine that carries out a spin method or a spray method for forming the thin film. Further, for forming the thin film, a wet printing method including an intaglio, a rubber plate, screen printing, and the like, including the three major printing methods of letterpress, offset and gravure, is also preferably used. From these, a preferable film forming method can be selected according to the liquid viscosity and the wet thickness of the dispersion.

The viscosity of the dispersion liquid of semiconductor fine particles is largely dependent on the type of semiconductor fine particles to be produced and its dispersibility, the type of solvent used, the additives used (surfactant, binder, etc.), and the like. High viscosity liquid (for example, 0.1 to
At 500 Pa · s (0.1 to 500 Poise)), an extrusion method, a casting method, a screen printing method and the like are preferable. For low viscosity liquids (eg 0.1 Pa · s or less (0.1 Poise or less)), slide hopper method,
The wire bar method or the spin method is preferable, and a uniform film can be formed. If the coating amount is a certain amount, it is possible to apply the extrusion method even in the case of a low viscosity liquid. As described above, the wet film forming method may be appropriately selected depending on the viscosity of the coating liquid, the coating amount, the support, the coating speed, and the like.

The thin film having a laminated structure can be used for the above-mentioned applications. For example, a thin film prepared by applying a multi-layered dispersion containing semiconductor particles each having a different particle size, or a multi-layer application of a dispersion containing semiconductor particles having different compound species (or different binders and additives). The thin film etc. which are produced are mentioned. It is also effective to apply the same dispersion in multiple layers if the film thickness is not sufficient to exhibit sufficient performance with one application. The extrusion method or the slide hopper method is suitable for multilayer coating. In the case of applying multiple layers, the multiple layers may be applied at the same time, or may be applied several times to several dozen times in sequence. Further, in the case of successive overcoating, a screen printing method can be preferably used.

[0034]

EXAMPLES The present invention will be described in more detail with reference to the following examples. The materials, reagents, ratios, operations and the like shown in the following examples can be appropriately changed without departing from the spirit of the present invention. Therefore, the scope of the present invention is not limited to the specific examples shown below.

[Production of Dispersion A] As a mixer, Japanese Patent Publication No.
The apparatus described in FIGS. 5 to 10 of JP-A-5-10545 was used. That is, a mixer having two concentric stirring blades was internally provided in a cylindrical reaction tank having a bottom hemispherical shape, and the mixer was installed at a position where the lower stirring blade was 15 mm from the bottom of the reaction tank. 800 mL of water was added to the reaction tank to maintain the water temperature at 30 ° C. The mixer was entirely immersed in water. Dispersion liquid A was prepared by supplying the liquid of Table 1 and the liquid of Table 2 kept at 30 ° C. to the mixer in the liquid through a reaction solution addition tube. The supply amount of both liquids is 10
It was controlled to 0 mL / min. Then, the dispersion A is added to 800
Centrifuge at 0 rpm for 15 minutes and wash with water and methanol.

[Preparation of Dispersion B] Dispersion B was prepared in the same manner except that the solution shown in Table 1 was used instead of the solution used in the preparation of particles A.

[Preparation of Dispersion C] Dispersion C was prepared in the same manner except that the solution shown in Table 2 was used instead of the solution used in the preparation of particles B.

[Preparation of Dispersion D] Dispersion D was prepared in the same manner except that the liquid shown in Table 2 was used instead of the liquid used in the production of particles B.

[Preparation of Dispersion E] Dispersion E was prepared in the same manner except that the liquid of Table 2 was added immediately after the preparation of dispersion A and the mixture was stirred for 15 minutes.

[Production of Dispersion Liquid F] The same procedure as in the production of particles A, except that the liquids in Table 1 and the liquids in Table 2 were added from the liquid level without using the addition pipe connected to the mixer. Dispersion F was prepared using the method and apparatus.

[Preparation of Dispersion G] Dispersion G was prepared by putting the liquid of Table 1 in a beaker and adding the liquid of Table 2 at 100 mL / min from the liquid surface while stirring and mixing with a stirrer. did.

[Preparation of Dispersion H] Dispersion H was prepared in the same manner as in preparation of dispersion G, except that the solution shown in Table 1 was used instead of the solution.

[Preparation of Dispersion I] Dispersion I was prepared in the same manner as in preparation of dispersion H, except that the liquid in Table 2 was used instead of the liquid.

[Production of Dispersion J] Immediately after the production of Dispersion G, the solutions of Table 2 were added and stirred for 15 minutes to prepare Dispersion J.

[0045]

[Table 1]

[0046]

[Table 2]

(Evaluation of particle size and particle size distribution) The dispersions A to J thus obtained were photographed with a transmission microscope to measure the particle size and particle size distribution per about 200 particles. The size distribution is shown in Table 3 together with the particle size as a coefficient of variation.

[0048]

[Table 3]

Of the particles obtained next, sample B,
For C, D, H and I, the photoluminescence intensity was measured using a fluorescence spectrophotometer (Hitachi (manufactured by FL) -4500). The obtained results are shown in Table 4, and the strength in Table 4 is a relative strength with the strength of the particle H being 1.

[0050]

[Table 4]

From the results shown in Table 3, it was found that the particles produced by the production method of the present invention are fine particles having a narrow particle size distribution. As a result, as is clear from the results shown in Table 4, it was found that the particles produced by the production method of the present invention (dispersions B, C and D) had a high fluorescence intensity.

According to the present invention, it is possible to provide a simple method for producing semiconductor fine particles having a uniform particle size.

Claims (6)

[Claims] 1. A first solution of a compound containing at least a Group II or Group III element and a second solution of a compound containing at least a Group V or Group VI element are mixed and reacted in an addition tank, II Including a fine particle producing step of producing fine particles composed of a Group III or Group III element and a Group V or Group VI element, and a solvent is previously injected into the addition tank,
A mixing chamber having an opening is disposed inside the addition tank below the liquid surface of the solvent, and the first solution and the second solution are each flow-rate-controlled and supplied to the mixing chamber. A method for producing semiconductor fine particles, comprising: 2. A stirring flow for mixing the supplied first solution and the second solution is formed in the mixing chamber, and the generated fine particles are discharged from the mixing chamber into the opening. The method for producing semiconductor fine particles according to claim 1, wherein a liquid flow is formed to be discharged to the outside of the mixing chamber through. 3. The first solution contains a group II element, and the second solution contains a group VI element, and the step of producing fine particles comprises the step of producing fine particles of group II and VI elements. The method for producing semiconductor fine particles according to claim 1 or 2, wherein: 4. Either the first solution or the second solution contains a transition metal or a rare earth metal, or a third solution containing a transition metal or a rare earth metal is added to the first solution or the second solution. The method for producing semiconductor fine particles according to any one of claims 1 to 3, wherein the fine particles activated by a transition metal or a rare earth metal are produced in the fine particle producing step by supplying the fine particles. 5. The solvent according to claim 1, wherein any one of the first solution and the second solution contains an anionic surfactant and / or a nonionic surfactant. Item 1. A method for producing semiconductor fine particles according to item 1. 6. The solvent according to claim 1, wherein one of the first solution and the second solution contains a polymerizable organic compound or a polymer.
Item 6. A method for producing fine semiconductor particles according to item.