JP2003086485A - Charged particle beam lithographic method and lithographic device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To improve lithography and precision, by correcting drawing misregistration due to movement or swinging of a stage, in a mask scan system provided with a scan deflector. SOLUTION: An electron beam lithographic system of a scan method, in which shaping beam is made to scan on a mask 15 provided with a pattern of one part of an LSI pattern to transfer the pattern onto a sample 21, is provided with a shaping tracking mechanism for feeding the position deviation amount of a mask stage 16 back to a shaping deflector 13 to correct a shaping beam position on the mask 15, an object-tracking mechanism for feeding positional deviations of the stage 16 and a sample stage 22 back to an object reflector 18 for correcting the beam positions on the mask 15, and a tracking-correcting mechanism for estimating the moving amounts of the respective stages 16, 22, in the time required for performing correction operations from the moving velocities of the respective stages 16 and 22 in performing correction operations of the respective tracking.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a charged beam drawing technique, and more particularly to a charged beam for irradiating a charged beam on a mask on which an LSI pattern is formed and transferring the pattern on the mask irradiated with the beam onto a sample. The present invention relates to a beam drawing method and a drawing device.

[0002]

2. Description of the Related Art Conventionally, an electron beam drawing apparatus has been used to form an LSI pattern on a sample such as a wafer. An ordinary electron beam drawing apparatus deflects an electron beam on a sample and directly draws a pattern on the sample. In recent years, an LSI pattern is formed on an EB mask and the electron beam is drawn on the mask. A method has been proposed in which the pattern of a mask that has been irradiated and beam-irradiated is transferred onto a sample (Japanese Patent Laid-Open No. 2001-52989).

In this apparatus, an illumination beam is applied to a partial area of an EB mask having a pattern (device pattern) to be transferred onto the wafer, and the beam (pattern beam) passing through the area is projected onto a corresponding portion on the wafer. The pattern of the area is transferred by image formation, and the illumination beam is deflected upstream of the mask to illuminate each area on the mask, and the transferred images of the pattern of each area are joined and arranged on the wafer surface. As a result, the entire device pattern is transferred. Then, the wafer is placed on the stage and moved, and the mask is also placed and moved on the stage. Regarding the error from the mask fulfillment position, the deflector (illumination beam deflector) arranged upstream of the mask is used. The irradiation position of the illumination beam is corrected by a deflector), and a mask image projection position error on the surface to be exposed due to the mask position error is corrected by a deflector (pattern beam deflector) arranged between the mask and the sensitive substrate. Correct and transfer to the fulfillment position on the exposed surface.

However, the above-mentioned electron beam drawing apparatus transfers the entire device pattern provided on the mask, and does not select and transfer a part of the pattern. Furthermore, the present invention does not relate to a mask scan type exposure method including a scan deflector. Further, in the above-mentioned electron beam drawing apparatus, both the stage for holding the mask and the stage for holding the wafer are movably provided, and when transferring the pattern while moving these, the writing pattern is changed by the fluctuation of the stage speed. There was a problem of misalignment. Further, even when the transfer is performed with the stage stopped, the positional deviation of the drawing pattern may occur due to the influence of the swing of the stage.

[0005]

As described above, the conventional LS is used.
Irradiating the mask on which the I pattern is formed with an electron beam,
An electron beam drawing apparatus for transferring the pattern of a mask irradiated with a beam onto a wafer has already been proposed, but this does not scan the beam on the mask. Also,
When the mask stage that holds the mask and the sample stage that holds the wafer are movably provided, there is a problem in that the position of the drawing pattern is displaced due to fluctuations and swings of these moving speeds.

The present invention has been made in consideration of the above circumstances. An object of the present invention is to correct a drawing position shift caused by movement or swing of a stage in a mask scanning system having a scan deflector. It is possible to provide a charged beam drawing method and a drawing apparatus that can improve the drawing accuracy.

[0007]

(Structure) In order to solve the above problems, the present invention adopts the following structure.

That is, the present invention is a scan type charged beam drawing method for transferring a charged beam onto a sample by scanning the charged beam on a mask provided with an LSI pattern, which is movable while holding the mask. A shaping tracking step of correcting the beam position on the mask by feeding back the displacement amount of the mask stage to a deflection system located upstream of the mask,
An objective that corrects the beam position on the sample by feeding back the positional shift amount of the movable sample stage holding the sample and the positional shift amount of the mask stage to a deflection system located between the mask and the sample. In performing the tracking step and the correction calculation of the molding tracking and the objective tracking, the beam position is corrected by predicting the moving amount of each stage during the time required for the correction calculation from the moving speeds of the mask stage and the sample stage. And a tracking correction step.

Further, according to the present invention, by scanning a charged beam formed on a mask provided with a part of an LSI pattern, a scan type charged beam drawing is performed to transfer a pattern larger than the formed beam onto a sample. A method for holding the mask and feeding back a displacement amount of a mask stage movable in the X and Y directions to a deflection system located upstream of the mask so that the shaping beam position on the mask is A molding tracking step of correcting, and a positional deviation amount of a sample stage that holds the sample and is movable in X and Y directions and a positional deviation amount of the mask stage are fed back to a deflection system located between the mask and the sample. The objective tracking step of correcting the beam position on the sample, In performing the King correction calculation, a tracking correction step of correcting the beam position by predicting the moving amount of each stage during the time required for the correction calculation from the moving speeds of the mask stage and the sample stage is included. And

Further, according to the present invention, a pattern larger than the shaped beam is transferred onto the sample by scanning the shaped charged beam with a scan deflector on a mask provided with a part of the LSI pattern. A charged beam drawing apparatus of a scanning system, which comprises a mask stage which holds the mask and is movable in X and Y directions, and a sample which holds the sample and is movable in X and Y directions. A stage, a shaping tracking unit that corrects the shaping beam position on the mask by feeding back a positional deviation amount of the mask stage to the shaping deflector or the scan deflector located upstream of the mask, and the mask. The stage displacement amount and the sample stage displacement amount are set in the objective deflector located between the mask and the sample. By readback, an objective tracking means for correcting the beam position on the sample,
When performing the correction calculation of the molding tracking and the objective tracking, a tracking correction unit for predicting and correcting the moving amount of each stage during the time required for the correction calculation from the moving speeds of the mask stage and the sample stage is provided. It is characterized by

Further, the present invention is a scan type charged beam drawing apparatus, which is provided with a mask stage which holds a mask provided with a part of an LSI pattern and is movable in X and Y directions. A shaping deflector for deflecting a shaped beam composed of a charged particle beam to a desired position on the mask, a scan deflector for scanning the shaping beam on the mask, and a sample used for pattern writing X, Y Direction, a sample stage that is movable in the direction, an objective lens that projects and exposes the mask pattern in the region where the shaped beam is scanned onto the sample, and a beam that has passed through the mask is deflected on the sample. Objective deflector and a shaping deflector or a shaping deflector located upstream of the mask for the positional deviation amount of the mask stage during scanning of the shaping beam. Forming tracking means for correcting the forming beam position on the mask by feeding back to the scan deflector, and an objective positioned between the mask and the sample for the amount of displacement of the mask stage and the amount of displacement of the sample stage. Objective tracking means for correcting the beam position on the sample by feeding back to the deflector, and the amount of movement of the stage during the time required for the correction calculation from the speed of the mask stage when performing the correction calculation of the shaping tracking. When performing the correction calculation of the objective tracking and the molding tracking correction means for predicting the correction, the movement amount of each stage during the time required for the correction calculation is predicted from the speeds of the mask stage and the sample stage, and the correction is performed. And an objective tracking correction means for performing And butterflies.

(Operation) According to the present invention, the beam position on the mask can be corrected by feeding back the displacement amount of the mask stage to the deflection system located upstream of the mask (molding tracking). In addition to this, when performing the correction calculation, the beam position correction (tracking correction) is performed by predicting the stage movement amount during the time required for the correction calculation from the movement speed of the mask stage, thereby performing the mask stage speed. It is possible to suppress the drawing position shift due to fluctuation or swing. In addition, by feeding back the displacement amount of the sample stage and the displacement amount of the mask stage to the deflection system located between the mask and the sample, the beam position on the sample can be corrected (objective tracking). In addition, when performing the correction calculation, the beam stage correction (tracking correction) is performed by predicting the movement amount of each stage during the time required for the correction calculation from the moving speeds of the mask stage and the sample stage, thereby performing the sample stage It is possible to suppress the drawing position displacement due to the speed fluctuation or the fluctuation.

Therefore, in the mask scanning system provided with the scan deflector, it is possible to correct the drawing position deviation due to the speed fluctuation and the swing of the stage, and it is possible to improve the drawing accuracy.

[0014]

DETAILED DESCRIPTION OF THE INVENTION The details of the present invention will be described below with reference to the illustrated embodiments.

FIG. 1 is a diagram showing the overall configuration of an electron beam drawing apparatus according to an embodiment of the present invention.

Reference numeral 11 in the figure is an electron gun for generating an electron beam. The electron beam emitted from this electron gun 11 is
The EB mask 15 is irradiated with the light having a rectangular shape formed by the forming aperture 12 arranged on the optical axis. A shaping main deflector 13 and a shaping sub-deflector (scan deflector) 14 are provided between the shaping aperture 12 and the mask 15. The beam shaped by the shaping aperture 12 is deflected to the mask position by the shaping main deflector 13 and scanned on the mask 15 at high speed by the shaping sub-deflector (scan deflector) 14.

A part of the LSI pattern is formed on the EB mask 15. The EB mask 15 is held on a mask stage 16, and the stage 16 can be moved in the horizontal direction (X, Y directions) by a stage drive device 43.

The pattern of the mask 15 scanned by the shaped beam is reduced and projected onto the sample 21 via the objective lens 17. An objective main deflector 18 and an objective sub-deflector 19 are arranged between the objective lens 17 and the sample 21. The sample 21 is held on a sample stage 22, and the stage 22 can be moved in the horizontal direction (X, Y directions) by a stage driving device 45.

Further, in the figure, 25 is a main computer for integrally controlling each part, 31 is a deflection control circuit, 32 is a shaping tracking amplifier, 33 is a shaping main deflection amplifier, 34 is a scan amplifier, and 35 is an objective main. A deflection amplifier, 36 is an objective tracking amplifier, and 37 is an objective sub-deflection amplifier. Four
Reference numeral 1 is a stage controller, 42 is a mask stage position measuring device, 43 is a mask stage driving device, 44 is a sample stage position measuring device, and 45 is a sample stage driving device.

The main computer 25 controls the stage controller 31 and the deflection controller 41, the deflection controller 31 controls various deflection amplifiers 32 to 37, and the stage controller 41 controls the stage driving devices 43 and 45. It has become so. In the figure, 27 indicates an electron beam and 28 indicates a scan range.

FIG. 2 is a schematic diagram for explaining the principle of the scan drawing method in this embodiment. As shown in FIG. 2, a plurality of types of patterns such as an optical proximity effect correction pattern are formed on the EB mask 15 as a part of the LSI pattern. This mask 15 is used as the mask stage 1
6 is set, the mask stage 16 is moved to move the pattern used on the mask 15 near the optical axis. Then, the beam shaped into a rectangle by the shaping aperture 12 is deflected by the shaping main deflector 13 to the center of the pattern, and the scan deflector 14 scans the pattern. The electron beam passing through the pattern hole of the mask 15
It is reduced and deflected to a target position on the sample 21 by the objective deflectors 18 and 19. In this way, a pattern larger than the rectangular shaped beam on the EB mask 15 can be transferred onto the sample 21.

The EB mask 15 and the sample 21 move during drawing as shown in FIG. When both are completely stationary, the pattern on the EB mask 15 can be transferred to a target position by scanning, but both cannot be completely stationary, and positional fluctuation is inevitable. Further, the mask 15 and the sample 21 may be positively moved. In either case, a deviation occurs between the scan position and the drawing position. The generation of this deviation and the outline of its correction will be described with reference to FIG. Here, in order to make the description easy to understand, it will be described in three stages.

First, FIG. 3A shows a case where the EB mask 15 is moving in the X direction, the sample 21 (drawing surface) is stationary, and the scanning direction is the Y direction. When the EB mask 15 is stationary, the rectangular beam may be scanned as shown by the dotted line in the figure, but in order to catch up with the movement, it is necessary to scan as shown by the solid line in the figure. That is, it is necessary to correct only the arrow in the figure. This correction is performed by the shaping main deflector 13 or the scan deflector 14.
Further, when this correction is performed and scanning is performed, the drawing surface is drawn as a dotted line, and therefore the correction on the drawing surface is required for the amount of the arrow in the opposite direction.

Second, FIG. 3B shows the case where the EB mask 15 is completely stationary and the sample 21 is moving. The scan may be performed as usual, but since it is drawn on the sample 21 as a dotted line, it is necessary to correct the distance by the arrow to catch up with the movement. This correction is performed by the objective deflectors 18 and 19.

Third, FIG. 3C shows the case where both the EB mask 15 and the sample 21 are moving. The correction amount at this time is a total amount of (a) and (b). Here, the function of causing the beam to follow the movement of the mask stage 16 is called shaping tracking, and the function of causing the beam to follow the movement of the mask stage 16 and the sample stage 22 is called objective tracking.

Next, the manner in which each of the above trackings is performed in this embodiment will be described with reference to the functional block diagram shown in FIG.

First, the molding tracking will be described. The EB mask position data C used for drawing is output from the main computer 25. The mask stage position measuring device 42, for example, a measuring device using a laser interferometer, is used for the mask stage 1
Measure position P ′ of 6. The mask stage position is changing and P'is changing with time. Assuming that the mask stage position immediately before the start of the shaping deflection correction calculation is D, the shaping deflection correction calculation is performed with the difference (C−D) from the target EB mask position C, and the voltage corresponding to the position difference is used as the shaping main deflection amplifier. By applying from 33 to the shaping main deflector 13, the correction immediately after the start of the shaping deflection correction calculation is performed.

On the other hand, since the mask stage 16 is still moving after the shaping main deflection correction calculation, further correction is required. If the position of the stage 16 after the start of the molding deflection correction calculation is P ′, the difference from the position D is (P′−D). Here, ΔX'1 = P'x-Dx ΔY'1 = P'y-Dy.

Further, since the mask stage 16 moves during this correction calculation, the correction calculation depending on the stage speed is performed as follows.

ΔX'2 = aV'x + b ΔY'2 = cV'y + d Here, ΔX2 ', ΔY2': Stage movement amount during calculation V'x, V'y: Stage speed a, c during calculation : Stage speed proportionality coefficient b, d: Stage movement offset amount ΔX '= ΔX'1 + ΔX'2 ΔY' = ΔY'1 + ΔY'2, molding tracking correction calculation is performed for ΔX ', ΔY', and it corresponds to the calculation result. Is applied to the shaping tracking amplifier 32. Then, by applying the shaping tracking amplifier voltage to the shaping main deflection amplifier voltage and applying it to the shaping main deflector 13, the moving EB mask 15 is moved.
Let the beam follow. The shaping tracking amplifier voltage may be applied to the scan deflection amplifier 34 instead of being applied to the shaping main deflection amplifier voltage.

Next, the objective tracking will be described. The drawing position data A is output from the main computer 25.
With respect to the sample stage 22, the position P and the velocity V are measured by a sample stage position measuring device 44, for example, a measuring device using a laser interferometer. The sample stage 22 is moving and P is changing with time. Assuming that the sample stage position immediately before the objective main deflection correction calculation is B, the objective main deflection correction calculation is performed for the difference (AB) from the target drawing position data A, and a voltage corresponding to the result is obtained. 35
To the objective deflector 18.

On the other hand, since the sample stage 22 moves during or after the calculation of the objective main deflection correction, further correction is required. Assuming that the sample stage position after the start of the objective main deflection correction calculation is P, the difference from the position B is (P−B).
Here, it is assumed that ΔX1 = Px−Bx ΔY1 = Py−By.

Furthermore, the sample stage 22 is also in operation during the correction calculation.
Moves, so the correction calculation depending on the sample stage speed is performed as follows.

ΔX2 = eVx + f ΔY2 = gVy + h here, ΔX2, ΔY2: Stage movement amount during calculation Vx, Vy: Stage speed during calculation e, f: Stage speed proportionality coefficient g, h: Stage movement offset amount ΔX = ΔX1 + ΔX2 ΔY = ΔY1 + ΔY2 And

The objective tracking correction calculation is carried out below in consideration of the mask stage position described above. ΔXs = A × ΔX + B × ΔY + C + D × ΔX '+ E × ΔY' ΔYs = F × ΔX + G × ΔY + H + I × ΔX '+ J × ΔY' where A, B, C, D, E, F, G, H, I, J Are coefficients respectively.

The voltages corresponding to ΔXs and ΔYs are output from the objective tracking amplifier 36 and applied to the objective main deflector 18 in addition to the objective main deflection amplifier voltage, so that the moving mask stage position and the sample stage position can be determined. Make the beam follow.

The order of the above operations is shown in FIGS.
As shown in FIG. 5, regarding molding tracking, (C
-D) performs the molding deflection correction calculation to perform the molding main deflector 13
After performing the correction by (1), the correction calculation depending on the stage speed is performed from (P'-D), and the molding tracking correction calculation is further performed. This molding tracking correction calculation is repeated a plurality of times during the molding deflection correction calculation interval if necessary. That is, the molding tracking correction calculation interval is the same as or smaller than the molding deflection correction calculation interval. That is, at least one molding tracking correction calculation is performed before the next molding main deflection correction calculation is performed.

Similarly, as shown in FIG. 6, for the objective tracking, after performing the objective main deflection calculation correction from (AB) and the objective main deflector 18, the (P-
The stage velocity-dependent correction calculation is performed from D), and the objective tracking correction calculation is further performed. This objective tracking correction calculation is performed in the objective deflection correction calculation interval.
Repeat multiple times if necessary. That is, the interval of the objective tracking correction calculation is set to be the same as or smaller than the objective deflection correction calculation. That is, the objective tracking correction calculation is performed once or more before the next objective main deflection correction calculation is performed.

As described above, according to this embodiment, the beam position on the mask 15 can be corrected by feeding back the positional deviation amount of the mask stage 16 to the shaping main deflector 13 or the scan deflector 14. When performing the correction calculation in addition to the molding tracking, the beam position is corrected by predicting the moving amount of the stage 16 during the time required for the correction calculation from the moving speed of the mask stage 16 to correct the beam position. It is possible to suppress the drawing position shift due to the speed fluctuation or the swing.

Further, the beam position on the sample 21 can be corrected by feeding back the positional displacement amount of the sample stage 22 and the positional displacement amount of the mask stage 16 to the objective main deflector 18. When performing the correction calculation in addition to the objective tracking, the beam position is corrected by predicting the movement amount of each of the stages 16 and 22 during the time required for the correction calculation from the moving speeds of the mask stage 16 and the sample stage 22. As a result, it is possible to suppress the drawing position shift due to the speed fluctuation or swing of the sample stage 22.

Therefore, even in the system in which the pattern on the EB mask 15 is transferred onto the sample 21 by beam scanning while moving the mask stage 16 and the sample stage 22, the beam is moved while following the moving EB mask 15. It is possible to accurately draw on the target position of the sample 21 to be processed.

In the above embodiment, the case where the pattern is drawn while moving both the mask stage 16 and the sample stage 22 has been described, but the present invention can be similarly applied to the step-and-repeat operation. Even when the stages 16 and 22 are not actively moved at the time of drawing by step-and-repeat, the stages 16 and 22 vibrate slightly due to mechanical vibration or motor output fluctuation.
Even with respect to these stage position shifts, the drawing position shifts can be accurately corrected by performing the molding tracking, objective tracking, and tracking correction described above.

Further, according to the present invention, when the mask stage 16 does not move and drawing is performed while moving only the sample stage 22, when the sample stage 22 does not move and only the mask stage 16 moves and drawing is performed. Can be similarly applied.

Further, in the embodiment, the mask on which a part of the LSI pattern is formed is irradiated with the electron beam. However, the present invention can be applied to a scan type ion beam drawing apparatus for irradiating and scanning an ion beam instead of the electron beam. You can also In addition, various modifications can be made without departing from the scope of the present invention.

[0045]

As described above in detail, according to the present invention, in the scanning type charged beam drawing apparatus having the scan deflector, the shaping tracking for correcting the beam position on the mask and the beam position on the sample are corrected. When performing each correction calculation of the objective tracking to be performed, by performing the tracking correction for correcting the beam position by predicting the movement amount of each stage during the time required for these correction calculations,
It is possible to correct the drawing position shift due to the speed fluctuation and swing of the stage, and it is possible to improve the drawing accuracy.

[Brief description of drawings]

FIG. 1 is a diagram showing an overall configuration of an electron beam drawing apparatus according to an embodiment of the present invention.

FIG. 2 is a schematic diagram for explaining the principle of the scan drawing method in the same embodiment.

FIG. 3 is a schematic diagram for explaining how a deviation occurs between a scan position and a drawing position in the same embodiment.

FIG. 4 is a functional block diagram showing how each tracking is performed in the same embodiment.

FIG. 5 is a flowchart for explaining a molding tracking operation in the same embodiment.

FIG. 6 is a flowchart for explaining the operation of objective tracking in the same embodiment.

[Explanation of symbols]

11 ... electron gun 12 ... Molding aperture 13 ... Molding main deflector 14 Molding sub-deflector (scan deflector) 15 ... EB mask 16 ... Mask stage 17 ... Objective lens 18 ... Objective main deflector 19 ... Sub objective deflector 21 ... Sample 22 ... Sample stage 25 ... Main computer 27 ... Electron beam 28 ... Scan range 31 ... Deflection control circuit 32 ... Molding tracking amplifier 33 ... Molding main deflection amplifier 34 ... Scan amplifier 35 ... Objective main deflection amplifier 36 ... Objective tracking amplifier 37 ... Objective sub-deflection amplifier 41 ... Stage controller 42 ... Mask stage position measuring instrument 43 ... Mask stage drive device 44 ... Sample stage position measuring instrument 45 ... Sample stage driving device

   ─────────────────────────────────────────────────── ─── Continued front page    (72) Inventor Konobu Akeno             1st Komukai Toshiba-cho, Sachi-ku, Kawasaki-shi, Kanagawa             Inside the Toshiba Research and Development Center (72) Inventor Mitsuko Shimizu             1st Komukai Toshiba-cho, Sachi-ku, Kawasaki-shi, Kanagawa             Inside the Toshiba Research and Development Center (72) Inventor Soichiro Mitsui             1st Komukai Toshiba-cho, Sachi-ku, Kawasaki-shi, Kanagawa             Inside the Toshiba Research and Development Center F-term (reference) 2H097 CA16 GB00 LA10                 5C034 BB05 BB06 BB07                 5F056 AA22 AA27 AA40 CB14 CB23                       CC05 FA10

Claims (5)

[Claims] 1. A scan type charged beam drawing method for transferring a charged beam onto a sample by scanning the charged beam on a mask provided with an LSI pattern, comprising a movable mask stage for holding the mask. A forming tracking step of correcting the beam position on the mask by feeding back the positional deviation amount to a deflection system located upstream of the mask, the positional deviation amount of a movable sample stage holding the sample, and An objective tracking step of correcting the beam position on the sample by feeding back the displacement amount of the mask stage to a deflection system located between the mask and the sample, and performing a correction calculation of the shaping tracking and the objective tracking. , Corrected from the moving speed of the mask stage and sample stage Charged beam lithography method characterized by including, a tracking correction step for correcting the expected to the beam position movement amount of each stage in the time required for calculation, respectively. 2. A scan type charged beam drawing method for transferring a pattern larger than the shaped beam onto a sample by scanning the charged beam shaped on a mask provided with a part of the LSI pattern. By holding the mask and feeding back the positional deviation amount of the mask stage movable in the X and Y directions to a deflection system located upstream of the mask to correct the shaping beam position on the mask. A tracking step, and by feeding back the positional displacement amount of the sample stage that holds the sample and is movable in the X and Y directions and the positional displacement amount of the mask stage to a deflection system located between the mask and the sample, An objective tracking step of correcting the beam position on the sample; In performing the calculation, a tracking correction step of correcting the beam position by predicting the moving amount of each stage during the time required for the correction calculation from the moving speeds of the mask stage and the sample stage, is included. Charged beam drawing method. 3. A scan method in which a pattern larger than the shaped beam is transferred onto a sample by scanning the shaped charged beam with a scan deflector on a mask provided with a part of the LSI pattern. A charged beam drawing apparatus, comprising: a mask stage that holds the mask and is movable in X and Y directions; a sample stage that holds the sample and is movable in X and Y directions; A shaping tracking unit that corrects the shaping beam position on the mask by feeding back the displacement amount of the mask stage to the shaping deflector or the scan deflector located upstream of the mask, and the position of the mask stage. The amount of displacement and the amount of displacement of the sample stage are fed back to the objective deflector located between the mask and the sample. By doing so, the objective tracking means for correcting the beam position on the sample, and each stage during the time required for the correction calculation from the moving speeds of the mask stage and the sample stage in performing the correction calculation of the shaping tracking and the objective tracking A charged beam drawing apparatus, comprising: a tracking correction unit that predicts the amount of movement of each of the two. 4. A mask stage provided so as to be movable in X and Y directions while holding a mask provided with a pattern of a part of an LSI pattern, and a shaped beam composed of a charged particle beam at a desired position on the mask. A shaping deflector that deflects the beam onto the mask, a scan deflector that scans the shaping beam on the mask, a sample stage that holds a sample used for pattern writing and is movable in the X and Y directions, and the shaping An objective lens for projecting and exposing the pattern of the mask on the sample in a region where the beam is scanned; an objective deflector for deflecting the beam passing through the mask on the sample; By feeding back the displacement amount of the mask stage to the shaping deflector or scan deflector located upstream of the mask,
A shaping tracking unit that corrects the shaping beam position on the mask, and by feeding back the positional deviation amount of the mask stage and the positional deviation amount of the sample stage to an objective deflector located between the mask and the sample, An objective tracking unit for correcting a beam position on a sample, and a molding tracking for performing a correction calculation of the molding tracking by predicting a moving amount of the stage during a time required for the correction calculation from a speed of the mask stage. Correction means, and in performing the correction calculation of the objective tracking, an objective tracking correction means for predicting the amount of movement of each stage during the time required for the correction calculation from the speeds of the mask stage and the sample stage to perform the correction. A charged beam drawing apparatus, characterized in that 5. The charged beam drawing apparatus according to claim 3, wherein both the mask stage and the sample stage are continuously moved during drawing of the pattern.