JP2003085712A - Thin-film magnetic head and its manufacturing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a thin-film magnetic head capable of increasing corrosion resistance of lower and upper shield layers and maintaining a good reproduction property, and to provide its manufacturing method, as for the thin-film magnetic head for reproduction that has a magneto-resistance effect element formed via a gap layer between the lower and the upper shield layers. SOLUTION: A lower shield layer 23 and an upper shield layer 32 are connected electrically by a conductive layer 31. Thus, the lower and upper shield layers 23 and 32 are set to equal potentials. Even when a solvent used during manufacturing or moisture in air permeates a protective film 47 to reach the lower and upper shield layers 23 and 32, the corrosion of the lower and upper shield layers 23 and 32 is properly suppressed by a battery effect.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a reproducing thin-film magnetic head in which a magnetoresistive effect element is formed with a gap layer between a lower shield layer and an upper shield layer, and more particularly to the lower shield layer and the upper shield layer. The present invention relates to a thin film magnetic head capable of improving corrosion resistance with respect to and capable of maintaining good reproduction characteristics, and a manufacturing method thereof.

[0002]

2. Description of the Related Art FIG. 13 is a partial longitudinal sectional view of the structure of a conventional thin film magnetic head.

Reference numeral 1 shown in FIG. 13 is a slider made of alumina-titanium carbide (Al ₂ O ₃ -TiC), and a thin film magnetic head 11 is formed on the slider 1 with an Al ₂ O ₃ film 10 interposed therebetween. To be done.

As shown in FIG. 13, a lower shield layer 3 made of a magnetic material is formed on the Al ₂ O ₃ film 10. A lower gap layer 4 formed of Al ₂ O ₃ or the like is formed on the lower shield layer 3, and the lower gap layer 4 is formed on the lower gap layer 4 in a height direction from a front end surface of the thin film magnetic head 11 on the recording medium D side. The magnetoresistive effect element 5 having a predetermined length is formed rearward (Y direction in the drawing). The magnetoresistive effect element 5 is, for example, a spin valve thin film element utilizing the giant magnetoresistive effect (GMR effect).

As shown in FIG. 13, an upper gap layer 6 made of Al ₂ O ₃ or the like is formed from above the magnetoresistive effect element 5 to above the lower gap layer 4, and a magnetic layer is formed on the upper gap layer 6. An upper shield layer 7 made of material is formed.

Each layer from the lower shield layer 3 to the upper shield layer 7 constitutes an MR head for reproduction.

On the upper shield layer 7, for example, Al ₂ O ₃
The protective layer 8 is formed by, for example, but an inductive head for recording may be provided on the upper shield layer 7.

As shown in FIG. 13, the thin film magnetic head 1
A protective layer 9 made of, for example, DLC (diamond-like carbon) is formed on the front end face of the No. 1.

In order to properly cope with further increase in recording density in the future, it is necessary to shorten the flying distance H1 from the front end face of the thin film magnetic head 11 to the recording medium D to reduce the spacing loss. For that purpose, it is necessary to reduce the film thickness T1 of the protective layer 9 formed on the front end surface of the thin film magnetic head 11 as much as possible.

[0010]

However, if the thickness T1 of the protective layer 9 is reduced, defects such as pinholes are likely to occur in the protective layer 9.

When a defect such as a pinhole occurs in the protective layer 9, for example, the solvent used in the process of manufacturing the magnetic head 11 or the water in the air penetrates into the protective layer 9 and the Water easily reaches the front end surfaces of the lower shield layer 3 and the upper shield layer 7. At this time, since a potential difference is generated between the lower shield layer 3 and the upper shield layer 7, the lower shield layer 3 and the upper shield layer 7 are corroded by the battery effect due to the potential difference between the lower shield layer 3 and the upper shield layer 7. There was a problem such as doing.

When the lower shield layer 3 and the upper shield layer 7 corrode in this way, the shield function of the lower shield layer 3 and the upper shield layer 7 deteriorates, and noise cannot be properly shielded at the time of reproduction, so that the reproduction characteristic is deteriorated. Will lead to a decline.

Therefore, the present invention is to solve the above-mentioned conventional problems. In particular, the lower shield layer and the upper shield layer are electrically connected by a conductive layer so that the lower shield layer and the upper shield layer have the same potential. Another object of the present invention is to provide a thin film magnetic head capable of appropriately improving the corrosion resistance of the lower shield layer and the upper shield layer, and a method of manufacturing the thin film magnetic head.

Further, the present invention provides a thin film magnetic head capable of appropriately defining the formation position of the conductive layer to improve the corrosion resistance and further improve the reproducing characteristic, and a method for manufacturing the same. Has an aim.

Further, according to the present invention, the conductive layer can be formed in the same step as the main electrode layer conductively connected to the magnetoresistive effect element, and the conductive layer can be easily and appropriately formed in a small number of steps. It is an object of the present invention to provide a method of manufacturing a thin film magnetic head that can be used.

[0016]

According to the present invention, there is provided a lower shield layer, a lower gap layer formed on the lower shield layer, the lower gap layer, and a height direction from a front end surface on the recording medium side. A magnetoresistive effect element having a predetermined length, an upper gap layer formed on the magnetoresistive effect element to the lower gap layer, and an upper shield layer formed on the upper gap layer. In the thin-film magnetic head having the above, the lower shield layer and the upper shield layer are electrically connected by a conductive layer penetrating the upper gap layer and the lower gap layer.

When the upper shield layer and the lower shield layer are electrically connected by a conductive layer as in the present invention, the upper shield layer and the lower shield layer have the same potential, so that the front end face of the thin film magnetic head (facing the recording medium). Even if the protective layer formed on the surface of the upper shield layer is thinned to reduce the spacing loss, the battery effect caused by the permeation of solvent or moisture in the air is reduced compared to the conventional case, and the upper shield layer is formed. The corrosion resistance of the lower shield layer and the lower shield layer can be improved.

Therefore, according to the present invention, it is possible to manufacture a thin film magnetic head which can appropriately maintain the shield function of the upper shield layer and the lower shield layer and can improve the reproducing characteristic even at a high recording density. Is possible.

Further, in the present invention, it is preferable that the main electrode layer is formed in conductive connection with the magnetoresistive effect element, and the conductive layer is formed of the same material as the main electrode layer.
As a result, the conductive layer can be easily and appropriately formed with a small number of manufacturing steps.

In the present invention, the main electrode layer is formed to extend rearward in the height direction from both sides of the magnetoresistive effect element in the track width direction, and the conductive layer is formed between the main electrode layers in the track width direction. Preferably, the conductive layer is formed in the middle between the main electrode layers in the track width direction. By thus forming the conductive layer in the middle in the track width direction, the influence of the external magnetic field on the shield layer can be reduced, and a thin film magnetic head having excellent reproducing characteristics can be manufactured.

In the present invention, the main electrode layer is formed on the upper gap layer, the main electrode layer is covered with an insulating material layer, and the upper shield layer is formed of the insulating material layer.
It is preferably formed on the upper gap layer and the conductive layer. As a result, proper insulation is maintained between the main electrode layer and the upper shield layer, and it is possible to eliminate problems such as shunting of the sense current from the main electrode layer to the upper shield layer, thereby improving reproduction characteristics. Is possible.

Further, in the present invention, the cross-sectional area of the conductive layer in the direction parallel to the film surface is preferably 1 μm ² or more and 500 μm ² or less.

Further, in the present invention, a protective layer is formed on the front end surface on the recording medium side, and the thickness of the protective layer is 0.5 n.
It is preferably m or more and 5 nm or less. In such a case, it is preferable that the protective layer is formed of one or more of DLC (diamond-like carbon) and ta-C (Tetrahedral Amorphous Carbon).

As a result, a spacing loss can be appropriately reduced, and a thin film magnetic head that can appropriately cope with high recording density can be manufactured. Moreover, in the present invention, the protective layer is thinly formed as described above, and the solvent, water, etc. during the manufacturing process penetrate into the protective layer, and the solvent, water, etc. easily reach the front end face of the shield layer. However, since the shield layer is set to the same potential, it is possible to appropriately suppress the corrosion of the shield layer, and it is possible to maintain a good shield function of the shield layer.

The method of manufacturing a thin film magnetic head of the present invention is characterized by including the following steps. (A) forming a lower gap layer on the lower shield layer,
Forming a magnetoresistive effect element on the lower gap layer with a predetermined length in the height direction; (b) forming an upper gap layer from above the magnetoresistive effect element to the lower gap layer; ) A step of forming a hole portion penetrating to the lower shield layer in the lower gap layer and the upper gap layer, and forming a conductive layer in the hole portion, (d)
Forming an upper shield layer on the upper gap layer and on the conductive layer;

According to the method of manufacturing a thin film magnetic head of the present invention described above, a conductive layer can be easily and appropriately formed between the lower shield layer and the upper shield layer, and the corrosion resistance of the shield layer can be effectively improved. It is possible to manufacture a thin film magnetic head that can be manufactured.

The method of manufacturing a thin film magnetic head of the present invention is characterized by including the following steps.
(E) a step of forming a lower gap layer on the lower shield layer, and (f) a magnetoresistive effect element having a predetermined length in the height direction on the lower gap layer, and further, A hole is formed on the lower gap layer between the step of forming electrode layers on both sides in the track width direction, (g) between the steps (e) and (f), or after the electrode layer of the step (f) is formed. A step of forming an upper gap layer over the magnetoresistive effect element, the electrode layer and the lower gap layer, and (i) the step (g).
A first hole is formed in the upper gap layer at the same position where the hole is formed in the lower gap layer in the step, and in the upper gap layer formed on the electrode layer, the first hole is formed in the electrode layer. A step of forming a second hole penetrating up to and (j) forming a main electrode layer from the second hole to the upper gap layer, and forming a conductive layer in the first hole. ,
(K) A step of covering the main electrode layer with an insulating material and forming an upper shield layer on the insulating material layer, the upper gap layer, and the conductive layer.

Also in the present invention, a thin film magnetic head capable of easily and appropriately forming a conductive layer between the lower shield layer and the upper shield layer and effectively improving the corrosion resistance of the shield layer. It is possible to manufacture

In the present invention, it is preferable that in the step (i), the first hole and the second hole are simultaneously formed in the upper gap layer. In the present invention, by providing a hole for forming a conductive layer in the lower gap layer in advance in the step (g), in the step (i), the first dug amount is substantially the same.
Can be formed and the second hole can be formed, which can reduce damage to the electrode layer due to excessive digging, especially when the second hole is formed.

In the present invention, it is preferable that, in the step (j), the main electrode layer is formed, and at the same time, the conductive layer is formed of the same material as the main electrode layer. As a result, the conductive layer can be easily and appropriately formed with a small number of manufacturing steps.

Further, in the present invention, in the step (j), it is preferable to form the main electrode layer and the conductive layer so that the conductive layer is located between the main electrode layers in the track width direction. It is more preferable that the main electrode layer and the conductive layer are formed so that the conductive layer is located in the middle between the main electrode layers in the track width direction.

Further, in the present invention, after the steps (d) and (k), a protective layer is formed on the front end surface of the thin film magnetic head on the recording medium side, and the thickness of the protective layer is 0.5 nm or more. It is preferably 5 nm or less. At this time, the protective layer is formed of DLC (diamond-like carbon), ta-C.
It is preferable to form one or more of (Tetrahedral Amorphous Carbon).

[0033]

1 is a partial plan view of a thin film magnetic head according to a first embodiment of the present invention, and FIG. 2 is a view 2 shown in FIG.
FIG. 3 is a partial vertical cross-sectional view of the thin film magnetic head when the thin film magnetic head is cut along line -2 and viewed in the direction of the arrow. In the partial plan view shown in FIG. 1, the upper shield layer 32, the lower gap layer 24, the upper gap layer 28 and the layers above the upper shield layer 32 shown in FIG. 2 are not shown.

Further, in the following, the illustrated X shown in FIG. 1 and FIG.
The direction is called the track width direction, and the Y direction in the drawing is called the height direction. The Z direction in the drawing is the moving direction of the recording medium D.

Reference numeral 20 shown in FIG. 2 is a slider made of alumina-titanium carbide (Al ₂ O ₃ -TiC) or the like. The thin film magnetic head 21 according to the present invention comprises an insulating layer 2 such as Al ₂ O ₃ or SiO ₂ on the slider 20.
2 is formed.

As shown in FIG. 2, permalloy (NiFe alloy) or sendust (Fe-A) is formed on the insulating layer 22.
A lower shield layer 23 made of a magnetic material such as an (1-Si alloy) is formed.

A lower gap layer 2 made of an insulating material such as Al ₂ O ₃ or SiO ₂ is formed on the lower shield layer 23.
4 are formed. A hole 24a is formed in the lower gap layer 24 at the rear in the height direction (Y direction in the drawing).

As shown in FIG. 2, the lower gap layer 24 is formed.
The magnetoresistive effect element 25 is formed on the top. As shown in FIGS. 1 and 2, the magnetoresistive effect element 25 is formed with a predetermined length dimension from the front end face of the thin film magnetic head 21 rearward in the height direction (Y direction in the drawing).

The magnetoresistive effect element 25 is, for example, a giant magnetoresistive effect element represented by a spin valve type thin film element utilizing the giant magnetoresistive effect (GMR effect), or a tunnel type magnetic element utilizing the tunnel effect (TMR effect). A resistance effect element and an anisotropic magnetoresistance effect element utilizing an anisotropic magnetic effect (AMR effect).

As shown in FIG. 1, the magnetoresistive effect element 2
On both sides of the track width direction of 5 (X direction in the drawing), for example,
A hard bias layer 26 made of a hard magnetic material is provided. When the magnetoresistive effect element 25 is, for example, a spin-valve type thin film element, the hard bias layer 26 has a magnetization of a free magnetic layer formed of a magnetic material such as a NiFe-based alloy forming the spin-valve type thin film element. It is for aligning in the track width direction (X direction in the drawing). The hard bias layer 26 may not be provided.

In the embodiment shown in FIGS. 1 and 2, the electrode layer 27 (sub-electrode layer) is formed on the hard bias layer 26 in an overlapping manner.

As shown in FIG. 2, the magnetoresistive effect element 2 is used.
5, on the electrode layer 27 and the lower gap layer 24, Al ₂
An upper gap layer 28 made of an insulating material such as O ₃ or SiO ₂ is formed.

As shown in FIG. 2, the upper gap layer 28 is formed.
A second hole 28 a is formed on the electrode layer 27. The second hole 28a penetrates to the surface of the electrode layer 27, and a main electrode layer 29 is formed from the inside of the second hole 28a to the surface of the upper gap layer 28. The main electrode layer 29 and the electrode layer 27 are electrically connected to each other through the second hole 28a.

As shown in FIG. 1, the main electrode layer 29 is formed on the electrode layers 27 formed on both sides of the magnetoresistive effect element 2 in the track width direction (X direction in the drawing) via the second hole 28a. It is formed so as to extend rearward in the direction (Y direction in the drawing).
In FIG. 1, the plane of the main electrode layer 29 is a substantially rectangular parallelepiped shape, but the shape of the main electrode layer 29 of FIG. 1 is shown in a simplified form, and the main electrode layer 29 is limited to the shape of FIG. Not a thing.

As shown in FIGS. 1 and 2, the main electrode layer 29 is formed by an insulating material layer 30 formed of an organic insulating material such as a resist or an inorganic insulating material from the upper surface of the main electrode layer 29 to the periphery thereof. Is covered.

As shown in FIG. 2, the upper gap layer 28 is formed.
Has a first hole 28b formed at the same position as the hole 24a formed in the lower gap layer 24, and the surface of the lower shield layer 23 is exposed from the first hole 28b and the hole 24a. is doing.

A conductive layer 31 is formed in the hole 24a formed in the lower gap layer 24 and the first hole 28b formed in the upper gap layer 28, and the conductive layer 31 is formed.
The lower surface of the is electrically connected to the lower shield layer 23.

As shown in FIG. 2, the upper gap layer 28 is formed.
NiFe is formed on the insulating material layer 30 and the conductive layer 31.
An upper shield layer 32 made of a system alloy (permalloy) or the like is formed.

The MR head h1 for reproduction is formed in each layer from the lower shield layer 23 to the upper shield layer 32 shown in FIG.
Is configured.

The thin film magnetic head 21 of the embodiment shown in FIG.
Is a composite type thin film magnetic head in which an inductive head h2 for recording is laminated on the MR head h1.

In the embodiment shown in FIG. 2, the upper shield layer 32 also functions as the lower core layer of the inductive head h2.

On the lower core layer 32 of the inductive head h2, a Gd determining layer 33 made of, for example, an organic material is provided at a position apart from the front end face of the thin film magnetic head 21 in the height direction (Y direction in the drawing). Has been formed. A back gap layer 34 made of a magnetic material is formed behind the Gd determining layer 33 in the height direction (Y direction in the drawing). The back gap layer 34 is magnetically connected to the lower core layer 32.

As shown in FIG. 2, the lower magnetic pole layer 35, the magnetic gap layer 36, and the upper magnetic pole are arranged from the bottom to the front end surface (the surface facing the recording medium D) of the thin film magnetic head 21 from the Gd determining layer 33. A pole layer 38 including the layer 37 is formed. The lower magnetic pole layer 35 and the upper magnetic pole layer 37 are N
It is formed of a magnetic material such as an iFe-based alloy, a CoFe-based alloy, a CoFeNi-based alloy. On the other hand, the magnetic gap layer 36 is formed of a non-magnetic conductive material such as NiP that can be plated.

As shown in FIG. 2, between the pole layer 38 and the back gap layer 34 and on the lower core layer 32,
A first coil layer 40 formed of a non-magnetic conductive material such as Cu is wound around an insulating underlayer 39 such as Al ₂ O ₃ and the like.

A space between the conductors of the first coil layer 40 is filled with an organic insulating material layer 41 such as a resist, and the upper portion of the first coil layer 40 and the organic insulating material layer 4 are filled.
1 is covered with an inorganic insulating material layer 42 such as Al ₂ O ₃ or the like. The surfaces of the inorganic insulating material layer 42, the pole layer 38, and the back gap layer 34 are flattened by using the CMP technique or the like.

As shown in FIG. 2, the inorganic insulating material layer 4 is formed.
A second coil layer 43 is wound on the second coil layer 43. Figure 2
2, the second coil layer 43 is covered with an organic insulating material layer 44 such as a resist, and on the organic insulating material layer 44, an upper core layer 45 formed of a magnetic material such as a NiFe alloy. Are formed by, for example, a frame plating method. As shown in FIG. 2, the tip portion 45 a of the upper core layer 45 is magnetically connected to the upper magnetic pole layer 37. In this embodiment, the tip 45
The front end surface of a is not formed on the same surface as the front end surface of the thin film magnetic head 21 (the surface facing the recording medium D), and is recessed in the height direction (Y direction in the drawing). 45
The front end face of a may be formed on the same plane as the front end face of the thin film magnetic head 21.

The base end portion 45b of the upper core layer 45 is magnetically connected to the back gap layer 30.

Each layer from the lower core layer 32 to the upper core layer 45 shown in FIG. 2 constitutes the inductive head h2 of the recording head.

In the inductive head h2, the first
When a recording current flows through the coil layer 40 and the second coil layer 43, a recording magnetic field is generated, and the upper magnetic pole layer 37-the upper core layer 45.
A magnetic path passing through the back gap layer 34, the lower core layer 32, and the lower magnetic pole layer 35 is formed. The magnetic gap layer 36
A signal is recorded on the recording medium D by the leakage magnetic field from between the lower magnetic pole layer 35 and the upper magnetic pole layer 37 which sandwich the pinion.

As shown in FIG. 2, the upper core layer 45 is covered with a protective layer 46 such as Al ₂ O ₃ . Further, as shown in FIG. 2, a protective layer 47 is formed on the front end surface (the surface facing the recording medium D) of the thin film magnetic head 21. The protective layer 47 is formed of DLC (diamond-like carbon), ta-C (Tetrahedral Amorphous Ca).
It is preferable that one or more of rbon) are formed.

Characteristic portions of the thin film magnetic head of the present invention will be described below. As shown in FIG. 2, in the present invention, between the lower shield layer 23 and the upper shield layer 32,
Conductive connection is made by the conductive layer 31. The conductive layer 3
1, the lower shield layer 23 and the upper shield layer 3
When the two are electrically connected, the lower shield layer 23 and the upper shield layer 32 can have the same potential.

Therefore, when the thin film magnetic head is immersed in a solvent during the manufacturing process of the thin film magnetic head 21, the solvent permeates from the protective film 47 formed on the front end surface of the thin film magnetic head 21, and Moisture in the air permeates through the protective film 43 formed on the front end surface of the thin film magnetic head 21 when the magnetic head is driven, so that the solvent and water penetrate the lower shield layer 23 and the upper shield layer 32. Even if it reaches, the battery effect hardly occurs or does not occur in the lower shield layer 23 and the upper shield layer 32.
Corrosion of the lower shield layer 23 and the upper shield layer 32 can be suppressed more appropriately than in the conventional case.

In the present invention, the lower shield layer 2 is thus formed.
3 and the upper shield layer 32 can be improved in corrosion resistance, so that the shield function of the shield layers 23, 32 can be kept good, and thus noise can be appropriately blocked by the shield layers 23, 32 during reproduction. Therefore, it is possible to manufacture a thin film magnetic head having excellent reproduction characteristics.

In the present invention, the thin film magnetic head 21 is also used.
The thickness T2 of the protective layer 47 formed on the front end surface of the
It is preferably not less than 5 nm and not more than 5 nm. As a result, the flying distance H2 between the front end surface of the thin film magnetic head 21 and the recording medium D can be shortened, and the spacing loss can be reduced. Further, in the present invention, since the protective layer 47 is formed thin as described above, defects such as pinholes are formed in the protective layer 47, and the solvent and air used in the manufacturing process of the thin-film magnetic head 21 are removed. Even if the water content in the lower shield layer 23 and the upper shield layer 32 is more likely to permeate into the lower shield layer 23 and the upper shield layer 32, the lower shield layer 23 and the upper shield layer 32 have the same potential in the present invention as described above, A battery effect is less likely to occur between the lower shield layer 23 and the upper shield layer 32, the lower shield layer 23 and the upper shield layer 32 are less likely to be corroded as compared with the conventional one, and the reproducing characteristics are excellent even in the high recording density. It has become possible to manufacture thin film magnetic heads.

Next, the material of the conductive layer 31 will be described below. The conductive layer 31 is preferably formed of a non-magnetic conductive material. In the present invention, when the conductive layer 31 is made of a non-magnetic conductive material, the conductive layer 31 is preferably made of the same material as the main electrode layer 29. In the present invention, the conductive layer 31 can be formed simultaneously with the main electrode layer 29 in the same step, as described in the manufacturing method described later.

As described above, according to the present invention, the conductive layer 31 can be simultaneously formed of the same material as the main electrode layer 29, and the conductive layer 31 can be easily and appropriately formed by a small number of steps. It is possible.

As will be described later in the manufacturing method,
The conductive layer 31, the hard bias layer 26, the electrode layer 27.
And the main electrode layer 29 are laminated at the same time as each step, and the conductive layer 31 is formed from the bottom to the hard bias layer 26,
It is also possible to form the electrode layer 27 and the main electrode layer 29 with a laminated structure made of the same material.

The conductive layer 31 is the main electrode layer 29.
It may be formed in a different process from that of the main electrode layer 29.

The conductive layer 31 is made of Cu, NiP, Al, C.
It is preferably formed of one or more non-magnetic conductive materials from r and Au.

The conductive layer 31 may have a single layer structure, but may have a multilayer structure, for example, Cr / C.
A three-layer structure of u / Cr can be exemplified.

The conductive layer 31 may be made of a magnetic material. When the conductive layer 31 is formed of a magnetic material, the conductive layer 31 is magnetized, and there is a concern that the magnetoresistive element 25 may be magnetically affected, but the lower shield layer 2
3 and the effect of improving the corrosion resistance of the upper shield layer 32 can be appropriately exhibited.

Further, the conductive layer 31 is formed of a magnetic material,
As shown in FIG. 2, the upper shield layer 32 of the MR head h1
When the same layer is used for both the lower core layer 32 of the inductive head h2 and the conductive layer 3 as follows.
It is preferable to define the formation position in the vertical section of No. 1.

That is, in the thin film magnetic head 21 of the embodiment shown in FIG. 2, the front end face 31a of the conductive layer 31 on the recording medium D side is closer to the recording medium D than the front end face 34a of the back gap layer 34 on the recording medium D side. Side (opposite to Y direction in the figure)
When it is located at, a part of the recording magnetic field guided from the upper core layer 45 to the lower core layer 32 through the back gap layer 34 may flow into the lower shield layer 23 through the conductive layer 31. is there. As a result, magnetic interference between the MR head h1 and the inductive head h2 at the time of reproduction and recording is strengthened, and the reproduction characteristic and the recording characteristic are deteriorated.

Therefore, in the case of a composite type thin film magnetic head of the type in which the conductive layer 31 is formed of a magnetic material and the lower core layer 32 and the upper shield layer 32 are formed of the same layer, the conductive layer 31 is It is preferable that the front end face 31a of the back gap layer 34 is formed behind the front end face 34a of the back gap layer 34 in the height direction (Y direction in the drawing). More preferably, the front end face 31a of the conductive layer 31 is located behind the rear end face 34b of the back gap layer 34 in the height direction (Y direction in the drawing).

The conductive layer 31 is made of NiFe alloy, C
It can be formed of a magnetic material such as an oFe-based alloy or a CoFeNi-based alloy.

Next, the formation position of the conductive layer 31 when the conductive layer 31 is viewed from directly above will be described. As shown in FIG. 1, the conductive layer 31 is formed between the main electrode layers 30 extending from the both sides of the magnetoresistive effect element 2 in the track width direction (X direction in the drawing) to the rear in the height direction (Y direction in the drawing). ing.

Further, as shown in FIG. 1, both end faces 31b of the conductive layer 31 in the track width direction (X direction in the drawing).
And the distance H3 from the inner end surface of the main electrode layer 29 is the same on both sides of the conductive layer 31, that is, the conductive layer 31 is the main electrode layer 2 in the track width direction.
It is preferably formed in the middle between 9 and 29.

As a result, even if an induced current is generated from the magnetoresistive effect element 25 or the like, the conductive layer 31 is formed in the middle in the track width direction (X direction in the drawing), so that an external magnetic field is applied to the shield layers 23 and 32. Can be weakened, the shield function can be appropriately maintained, and a thin film magnetic head having excellent reproducing characteristics can be manufactured.

Further, in the present invention, it is more preferable that the conductive layer 31 is located in the middle of the lower shield layer 23 and the upper shield layer 32 in the track width direction (X direction in the drawing). Further, it is more preferable that the conductive layer 31 is formed directly behind the magnetoresistive effect element 25 in the height direction (Y direction in the drawing). As a result, the influence on the external magnetic field can be weakened more appropriately, and a thin film magnetic head having excellent reproducing characteristics can be manufactured.

The upper and lower sides of the magnetoresistive effect element 25 (Z in the figure)
Direction), when the magnetoresistive effect element 25 having a structure in which an electrode layer is formed, for example, in the case of a tunnel type magnetoresistive effect element or a CPP type magnetoresistive effect element, it is planarly arranged as shown in FIG. When viewed, since the main electrode layers 29 are not formed on both sides of the magnetoresistive effect element 25 in the track width direction (X direction in the drawing), the conductive layer 3 is formed between the main electrode layers 29 as shown in FIG.
It is impossible to place 1 in the first place.

Even in such a case, as described above, the conductive layer 31 is replaced by the lower shield layer 23 and the upper shield layer 32.
Of the magnetoresistive element 25, and the conductive layer 31 is located in the middle in the track width direction (X direction in the drawing).
Is formed right behind in the height direction (Y direction in the drawing), the influence of the external magnetic field on the shield layers 23 and 32 can be weakened even if an induced current from the magnetoresistive effect element 25 is generated. It is possible to manufacture a thin film magnetic head which can maintain the function properly and has excellent reproducing characteristics.

The cross-sectional area in the direction parallel to the film surface of the conductive layer 31 (the surface formed by the X direction and the Y direction in the drawing) is preferably 1 μm ² or more and 500 μm ² or less. If the cross-sectional area in the direction parallel to the film surface of the conductive layer 31 is smaller than 1 μm ² , it is difficult to form the conductive layer 31 in a predetermined shape, and the space between the lower shield layer 23 and the upper shield layer 32 is reduced. Is not preferable because it is difficult to properly conduct a conductive connection.

On the other hand, when the cross-sectional area in the direction parallel to the film surface of the conductive layer 31 becomes larger than 500 μm ² , the conductive layer 31 formed between the main electrode layers 29 in the track width direction (X direction in the drawing) is formed. In addition, it is easy to electrically interfere with or come into contact with the main electrode layer 29, and a problem such that a part of the sense current flowing from the main electrode layer 29 to the magnetoresistive element 25 is shunted to the conductive layer 31 is likely to occur, which is preferable. Absent.

The distance H3 between the both end surfaces 31b of the conductive layer 31 and the main electrode layer 29 shown in FIG. 1 is 0.5 μm.
The above is preferable. Thereby, the main electrode layer 2
The electrical interference between 9 and the conductive layer 31 can be suppressed.

The main electrode layer 29 shown in FIG. 1 is formed so as to extend further rearward in the height direction (Y direction in the drawing) than the rear end surface of the upper shield layer 32, and from the rear end portion of the main electrode layer 29, The extraction layer 48 is formed. A sense current flows from the extraction layer 48 to the main electrode layer 29 and the magnetoresistive effect element 25.

Next, the shape of the conductive layer 31 will be described below. As shown in FIG. 1, the shape of the cross section in the direction parallel to the film surface of the conductive layer 31 is a substantially quadrangle, but the shape of the cross section may be a substantially round shape or the like. Further, as shown in FIG. 2, both end portions of the longitudinal section of the conductive layer 31 are
Although extending in the vertical direction (Z direction in the drawing) from the surface of the lower shield layer 23, the both end portions may be curved or inclined.

Characteristic portions of the thin film magnetic head 21 of FIGS. 1 and 2 other than the conductive layer 31 will be described below.

As shown in FIG. 2, the upper surface of the main electrode layer 29 and the periphery thereof are covered with an insulating material layer 30, whereby the upper shield layer 32 and the main electrode layer 2 are covered.
It is possible to prevent conductive connection between 9 and 9 and form a thin film magnetic head 21 having excellent reproduction characteristics. The insulating material layer 30 may be formed of an organic insulating material such as a resist or an inorganic insulating material. Since the manufacturing method differs depending on the material, that point will be described later.

In the present invention, the insulating material layer 30 described above is used.
It is possible to present a structure in which the insulation between the main electrode layer 29 and the upper shield layer 32 can be ensured without forming the.

For example, the periphery of the magnetoresistive effect element 25 and the electrode layer 27 shown in FIG. 2 is filled with an insulating layer, the main electrode layer 29 is formed on the insulating layer, and the main electrode layer is formed on the magnetoresistive effect element 29. The upper gap layer 28 is formed on the upper surface 29. In this case, since the upper electrode layer 29 is covered with the upper gap layer 28,
It is not necessary to form the insulating material layer 30 again.

Next, in the present invention, the lower shield layer 23
The upper shield layer 32 and the upper shield layer 32 may be formed of the same magnetic material or different magnetic materials.

In the embodiment shown in FIG. 2, since the upper shield layer 32 also functions as the lower core layer of the inductive head h2, it is preferable that the upper shield layer 32 has a core function as well as a shield function.

The magnetic characteristics required for the shield function are high magnetic permeability and low magnetostriction constant, and the magnetic characteristics required for the core function are high saturation magnetic flux density. Therefore, it is preferable that the upper shield layer 32 has a magnetic permeability and a magnetostriction constant equal to those of the lower shield layer 23 and has a saturation magnetic flux density higher than that of the lower shield layer 23.

For example, both the upper shield layer 32 and the lower shield layer 23 can be formed of a NiFe alloy. In such a case, the N used for the upper shield layer 32 is
To make the saturation magnetic flux density of the upper shield layer 32 higher than that of the lower shield layer 23 by making the Fe composition ratio of the iFe alloy higher than that of the NiFe alloy used for the lower shield layer 23. You can

If the upper shield layer 32 and the lower shield layer 23 are made of different magnetic materials, and if the conductive layer 31 is not formed as in the present invention, it is normally made of the same material. In comparison, the upper shield layer 3
2 and the lower shield layer 23 have a larger potential difference, and the upper shield layer 32 and the lower shield layer 23 are more likely to be corroded by the battery effect. By electrically connecting the upper shield layer 32 with the conductive layer 31, the battery effect can be suppressed even if the upper shield layer 32 and the lower shield layer 23 are formed of different materials.
2 and the lower shield layer 23 can be improved in corrosion resistance.

FIG. 3 is a partial vertical sectional view of the structure of the thin film magnetic head of the second embodiment of the present invention.

In the thin film magnetic head 21 of the second embodiment shown in FIG. 3, unlike the thin film magnetic head 21 of FIG. 2, an upper shield layer 32 constituting the MR head h1 and a lower core layer 52 constituting the inductive head h2. Are formed separately, and an insulating layer (separation layer) 50 made of an insulating material such as Al ₂ O ₃ or SiO ₂ is formed between the lower core layer 52 and the upper shield layer 32. .

That is, the thin film magnetic head 21 shown in FIG. 3 is a form in which the MR head h1 and the inductive head h2 are formed completely separately without using the same layer.
A thin film magnetic head 21 such as
back) type thin film magnetic head.

The piggyback type thin film magnetic head 21 is
Compared with the thin film magnetic head 21 of FIG. 2, there is an advantage that magnetic interference between the MR head h1 and the inductive head h2 at the time of recording and reproducing can be appropriately suppressed.

In the thin film magnetic head 21 shown in FIG. 3, since the lower core layer 52 and the upper shield layer 32 are formed separately, a potential difference occurs between the lower core layer 52 and the upper shield layer 32, and the manufacturing process is performed. Since the protective layer 47 is thinned in order to cope with the high recording density, the solvent used in the above and moisture in the air can be removed from the protective layer 47 formed on the front end face of the thin film magnetic head 21. It penetrates and the lower core layer 52 and the upper shield layer 32 are easily corroded.

Therefore, in FIG. 3, the lower core layer 52 and the upper shield layer 32 are electrically connected to each other by the conductive layer 51, so that the lower core layer 52 and the upper shield layer 32 have the same potential. Corrosion resistance of the lower core layer 52 and the upper shield layer 32 may be improved.

The conductive layer 51 may be formed of either a non-magnetic conductive material or a magnetic material, but when it is formed of a magnetic material, it can be formed in the same step as the formation of the lower core layer 52. It is preferable to form the conductive layer 51. In this case, the lower core layer 52 and the conductive layer 51 are integrated.

When the conductive layer 51 is formed of a magnetic material, the front end face 51a of the conductive layer 51 on the recording medium D side is located closer to the front end face 34a of the back gap layer 34 on the recording medium D side. It is preferably formed in the rear of the height direction (Y direction in the drawing). This can prevent a part of the recording magnetic field from being guided from the lower core layer 52 to the upper shield layer 32 via the conductive layer 51, so that the thin film magnetic head 21 having excellent reproduction characteristics and recording characteristics can be formed. Is.

In such a case, the upper shield layer 32
When the conductive layer 31 that electrically connects the lower shield layer 23 and the lower shield layer 23 is formed of a magnetic material, the front end surface 31a of the conductive layer 31 is located rearward in the height direction from the front end surface 51a of the conductive layer layer 51 (Y in the drawing). It is considered that it is preferable to form in the (direction) from the viewpoint of maintaining good reproduction characteristics.

When the lower core layer 52 and the upper shield layer 32 are separately formed as shown in FIG. 3, the lower core layer 52 is made of a magnetic material having a high saturation magnetic flux density to improve the core function. On the other hand, the upper shield layer 32
Is preferably made of a magnetic material having a high magnetic permeability and a low magnetostriction constant in order to improve the shield function.

Further, in FIG. 3, it is preferable that the lower shield layer 23 and the upper shield layer 32 are formed of the same magnetic material so that the shield functions of the lower shield layer 23 and the upper shield layer 32 are improved to the same degree.

The thin film magnetic head 2 shown in FIGS.
In No. 1, the MR head h1 and the inductive head h2 are formed in a composite form, but in the present invention, the thin film magnetic head 21 may be composed of only the MR head h1.

4 to 9 are manufacturing process diagrams of the thin film magnetic head according to the present invention. 4 to 9 are partial vertical cross-sectional views during the manufacturing process of the thin film magnetic head.

The thin film magnetic head during the manufacturing process is shown in FIG.
It is formed so as to extend to a region B on the left side of the line AA shown in FIG. In the final step of manufacturing the thin film magnetic head, the thin film magnetic head is cut down to the line AA, that is, each laminated film in the area B shown in FIG.
The line A becomes the front end face of the completed thin film magnetic head. When the expression "a surface to be the front end surface of the thin film magnetic head" is used below, it means a cut surface when the thin film magnetic head is cut in the track width direction (X direction in the drawing) from the line AA. The presence of the B region shown in FIG. 4 will not be described or illustrated from FIG. 5 onward.

In FIG. 4, an insulating layer 22 made of Al ₂ O ₃ or the like is formed on the slider 20, and further the insulating layer 2 is formed.
A lower shield layer 23 made of a magnetic material is formed on the surface 2 by a plating method, a vapor deposition method, a sputtering method or the like. Next, a lower gap layer 24 made of an insulating material such as Al ₂ O ₃ is formed on the lower shield layer 23 by a sputtering method or a vapor deposition method.

Next, in FIG. 4, a magnetoresistive effect element 25 is formed on the lower gap layer 24. The magnetoresistive effect element 25 is formed once on the entire surface of the lower gap layer 24, and then a resist layer (not shown) is used.
Is formed into a predetermined shape as shown in FIG.

As shown in FIG. 4, the magnetoresistive effect element 25 is arranged on the lower gap layer 24 in the height direction (Y in the drawing) from the surface (cut surface taken along line AA) to be the front end surface of the thin film magnetic head. Direction) is left with a predetermined length dimension. The magnetoresistive effect element 25 is a giant magnetoresistive effect element using a giant magnetoresistive effect (GMR effect) typified by a spin valve thin film element, and a tunnel magnetoresistive effect (TMR).
The tunnel type magnetoresistive effect element utilizing the effect), the anisotropic magnetoresistive effect element utilizing the anisotropic magnetoresistive effect (AMR effect), and the like.

Thereafter, a hard bias layer 26 and an electrode layer 27 extending in the height direction rearward (Y direction in the drawing) are formed on both sides of the magnetoresistive effect element 25 in the track width direction (X direction in the drawing) with resist layers (not shown). To form a pattern. The planar shapes of the hard bias layer 26 and the electrode layer 27 are as shown in FIG. 1, for example. The hard bias layer 26 may not be provided. When the magnetoresistive effect element 25 is a tunnel magnetoresistive effect element or a CPP magnetoresistive effect element, electrode layers are formed above and below the magnetoresistive effect element 25.

After patterning the magnetoresistive effect element 25, the hard bias layer 26 and the electrode layer 27 on the lower gap layer 24 as shown in FIG. 4, as shown in FIG. Layer 27 on top and bottom gap layer 2
Then, a resist layer 60 is formed on the surface 4. Further, a hole 60a is formed by exposure and development in a part of the resist layer 60 formed on the lower gap layer 24, and the surface of the lower gap layer 24 is exposed from inside the hole 60a.

Then, the lower gap layer 24 exposed from the hole 60a is removed by RIE method or ion milling method (the dotted line portion is removed), and the lower gap layer 24 is removed.
A hole 24a is formed so as to penetrate to the lower shield layer 23. Then, the resist layer 60 is removed.

Next, in the step shown in FIG. 6, an upper gap layer 28 is sputtered on the magnetoresistive effect element 25, the electrode layer 27, the lower gap layer 24, and the lower shield layer 23 exposed from the holes 24a. Method or vapor deposition method.

Then, a resist layer 67 is formed on the upper gap layer 28. Next, a resist layer 67 on the upper gap layer 28 formed on the electrode layer 27 and a resist layer 67 on the upper gap layer 28 filling the holes 24a formed in the lower gap layer 24 in the previous step, respectively. The resist layer 67 is removed by exposure and development, and a hole 67 is formed in the resist layer 67.
a and 67b are formed.

Next, the upper gap layer 28 exposed from the holes 67a and 67b is removed by the RIE method or the ion milling method, and the electrode layer 27 is formed on the upper gap layer 28.
The second hole portion 28a whose surface is exposed and the lower shield layer 2
A first hole portion 28b whose surface is exposed is formed.

Now, the advantage of previously forming the holes 24a in the lower gap layer 24 in the step shown in FIG. 5 will be described.

When the holes 24a are formed in the lower gap layer 24 in advance in the step of FIG. 5, the thickness of the insulating layer exposed from the holes 67b formed in the resist layer 67 in the step of FIG. It is only the thickness of 28.

Temporarily, a hole 24a is formed in the lower gap layer 24.
If not opened, the hole 67b of the resist layer 67
The thickness of the insulating layer exposed from above is the total thickness of the lower gap layer 24 and the upper gap layer 28. In such cases,
The thickness of the insulating layer exposed from the hole 67a of the resist layer 67 (only the thickness of the upper gap layer 28) and the hole 67b.
Since the thickness of the insulating layer exposed from above (the combined thickness of the lower gap layer 24 and the upper gap layer 28) is different, at the time when the upper gap layer 28 exposed from the holes 67a and 67b is completely ground, The lower gap layer 24 remains in 67b. Therefore, the hole 67
When the lower gap layer 24 exposed from b is shaved by ion milling or the like to expose the surface of the lower shield layer 23, the exposed electrode layer 27 is shaved in the holes 67a, resulting in damage to the electrode layer 27. Will give. Particularly, as for the milling rate, the electrode layer 27 has a lower gap layer 24.
Since it is faster, the electrode layer 27 is greatly damaged.

In order to solve the above problems, in the present invention, the holes 24a are first formed in the lower gap layer 24 in the step of FIG. 5, and the holes 67a formed in the resist layer 67 in the step of FIG. The thickness of the insulating layer exposed from 67b is limited to the thickness of the upper gap layer 28. This eliminates the problem that the electrode layer 27 is scraped off,
It is possible to manufacture a thin film magnetic head having excellent reproduction characteristics.

In the step of FIG. 6, after forming the second hole 28a and the first hole 28b in the upper gap layer 28, the resist layer 67 is removed.

Next, in the step shown in FIG. 7, after the resist layer 61 is once formed on the upper gap layer 28 in the second hole portions 28a and the second hole portions 38b, the resist layer 61 is exposed. After development, part of the resist layer 61 is left as shown in FIG. By this exposure and development, the resist layer 61 filling the second hole portion 28a and the first hole portion 28b of the upper gap layer 28 is all removed, and the hole portions are formed around the hole portions 28a and 28b. Patterns 61a and 61b of a predetermined shape having a larger area than 28a and 28b are formed on the resist layer 61.

The pattern 61a formed on the resist layer 61 is a region where the main electrode layer 29 is formed in the next step, and the pattern 6 formed on the resist layer 61.
1b is a region where the conductive layer 31 is formed in the next step.

Then, in the step shown in FIG. 8, the main electrode layer 29 is formed on the pattern 61a formed on the resist layer 61. The main electrode layer 29 is formed by a sputtering method or a vapor deposition method.

The main electrode layer 29 is the upper gap layer 2
8 is also formed in the hole 28a formed in No. 8 and the main electrode layer 29 is electrically connected to the electrode layer 27.

The conductive layer 31 is formed in the pattern 61b formed on the resist layer 61 in the same step and the same method as the main electrode layer 29. By forming the conductive layer 31 simultaneously with the main electrode layer 29, the material of the conductive layer 31 becomes the same as that of the main electrode layer 29.

The conductive layer 31 is electrically connected to the lower shield layer 23 via the lower gap layer 24 and the upper gap layer 28. Then, the resist layer 61 is removed.

In the step shown in FIG. 9, the main electrode layer 29 and its periphery are covered with an insulating material layer 30 made of an organic material such as a resist. As a forming method, a resist layer is once formed on the entire surface of the main electrode layer 29 and the upper gap layer 28, and then the resist layer is left only on the upper surface of the main electrode layer 29 and its periphery by exposure and development, and the remaining The baked resist layer is post-baked and cured.

Next, on the insulating material layer 30, the upper gap layer 28 and the electrode layer 31, a plating underlayer 32a made of a magnetic material or a non-magnetic conductive material made of, for example, a NiFe alloy is formed by a sputtering method or a vapor deposition method. Then, the upper shield layer 32 made of a magnetic material is formed on the plating underlayer 32a.
Forming by plating.

As described above, the MR head h1 shown in FIGS. 2 and 3 can be manufactured by the steps shown in FIGS.

In the step shown in FIG. 8, the main electrode layer 29 and the conductive layer 3 are formed.
1 and 2 are formed at the same time, the conductive layer 3 can be formed by a small number of steps.
1 can be formed easily and appropriately, but the main electrode layer 29 and the conductive layer 31 may not be formed simultaneously but may be formed separately.

Even if the hole 24a is not formed in the lower gap layer 24 in the step of FIG. 5, the electrode layer 27 is not damaged and the second hole is formed in the upper gap layer 28 by the following method. 28a and the 1st hole part 28b can also be opened.

That is, in the step of FIG. 6, first, the resist layer 67 is formed.
Only the hole 67a is formed by exposure and development.
The upper gap layer 28 exposed from a is shaved to form a second hole 28a, and the electrode layer 27 is formed from the second hole 28a.
Expose the surface. Next, the resist layer 67 is once removed, and then a new resist layer is replaced with the upper gap layer 28.
Form on top. At this time, the second hole portion 28a formed in the upper gap layer 28 is also filled with the resist layer, and only the hole portion 67b shown in FIG. 6 is formed in the resist layer by exposure and development, and exposed from the hole portion 67b. Upper gap layer 2
8 and the lower gap layer 24 are removed to expose the surface of the lower shield layer 23.

That is, according to the above method, the first hole portion 28b and the second hole portion 28a formed in the upper gap layer 28 are formed.
Are opened using different resist layers in different steps.

According to the method described above, the electrode layer 2 can be formed without forming the hole 24a in the lower gap layer 24 in the step of FIG.
A second hole 28a and a first hole 28b can be formed in the upper gap layer 28 without damaging the upper gap layer 28.

In the process shown in FIG. 9, the main electrode layer 29 and its periphery are covered with the insulating material layer 30 made of an organic insulating material such as a resist, but may be covered with an inorganic insulating material layer.

In the process shown in FIG. 10 (partial vertical sectional view in the manufacturing process of the thin film magnetic head), a resist layer 62 is formed on the main electrode layer 29, the upper gap layer 28 and the conductive layer 31, and then exposed and developed. Thus, the resist layer 62 is left on the conductive layer 31 and between the surface to be the front end surface of the thin film magnetic head (the cut surface from the line AA shown in FIG. 4) to the front end surface of the main electrode layer 29. .

Al is formed on the main electrode layer 29 not covered with the resist layer 62 and on the upper gap layer 28.
_The inorganic insulating material layer 63 made of ₂ O ₃ or SiO ₂ is formed by a sputtering method or a vapor deposition method. Then, the resist layer 62 is removed.

By the method described above, the inorganic insulating material layer 63 can be formed on the upper surface of the main electrode layer 29 and its periphery.

The reason why the resist layer 62 is left between the surface to be the front end surface of the thin film magnetic head and the front end surface of the main electrode layer 29 so that the inorganic insulating material layer 63 is not formed in this portion is as follows. , The inorganic insulating material layer 63 in this portion
Is formed, the inorganic insulating material layer 63 is exposed from the surface which should be the front end surface of the thin film magnetic head, and the gap between the lower shield layer 23 and the upper shield layer 32, that is, the gap length Gl is expanded. is there. The gap length Gl is preferably short in order to appropriately cope with the increase in recording density, and the inorganic insulating material layer 63 is prevented from being exposed from the surface to be the front end surface of the thin film magnetic head. It becomes possible to suppress the gap length Gl by a size obtained by adding the film thicknesses of the lower gap layer 24, the magnetoresistive effect element 25, and the upper gap layer 28.

The steps shown in FIGS. 4 and 5 may be reversed. The manufacturing process is shown in FIGS.

In the step shown in FIG. 11, the insulating layer 22, the lower shield layer 23 and the lower gap layer 2 are formed on the slider 20.
4 is formed, a resist layer 64 is formed on the lower gap layer 24, and a hole portion 64a is formed in the resist layer 64 by exposure and development. Then, the lower gap layer 24 exposed from the hole 64a is removed, and the hole 24a exposing the surface of the lower shield layer 23 is formed in the lower gap layer 24. Then, the resist layer 64 is removed.

In the process shown in FIG. 12, a magnetoresistive effect element 25 is formed on the entire surface of the lower gap layer 24, and then a resist layer 65 is formed on the magnetoresistive effect element 25. The hard bias layer 26
And a hole 65a for forming the electrode layer 27 is formed by exposure and development. At this time, the resist layer on the hole 24a formed in the lower gap layer 24 is also removed by exposure and development to form a hole 65b.

Since the unnecessary magnetoresistive effect element 25 is exposed from the holes 65a and 65b, the hard bias layer 26 is removed after the magnetoresistive effect element 25 is removed by the RIE method or the ion milling method. And the electrode layer 27 is formed in the holes 65a and 65b formed in the resist layer 65. Then, the resist layer 65 is removed.

Thereafter, the same steps as those of FIG. 6 and subsequent steps are followed, but the conductive layer 31 formed through the steps of FIG. 11 and FIG.
It has a layered structure, the lowermost layer is the same material layer 26a as the hard bias layer 26, and the second layer is the same material layer as the electrode layer 27.
a, the third layer is made of the same material as the main electrode layer 29.

When the main electrode layer 29 and the conductive layer 31 are formed in the step shown in FIG. 8, as shown in FIG. 1, the magnetoresistive effect element 2 is moved in the height direction from both sides in the track width direction (X direction in the drawing). During the step of FIG. 6, the conductive layer 31 is positioned between the main electrode layers 29 extending rearward (Y direction in the drawing).
Appropriately define the formation positions of the second holes 28a and the first holes 28b formed in the upper gap layer 28, and the shapes of the patterns 61a and 61b formed in the resist layer 61 in the step of FIG. Is preferred.

Further, as shown in FIG. 1, it is more preferable to position the conductive layer 31 in the middle between the main electrode layers 29 in the track width direction (X direction in the drawing).

As a result, even if an induced current is generated from the magnetoresistive effect element 25 or the like, the conductive layer 31 is formed in the middle in the track width direction (X direction in the drawing), so that an external magnetic field to the shield layers 23 and 32 is generated. Can be weakened, the shield function can be appropriately maintained, and a thin film magnetic head having excellent reproducing characteristics can be manufactured.

Further, in the present invention, after forming up to the upper shield layer 32 shown in FIG. 9, the inductive head h2 shown in FIG. 2 or 3 may be formed.

In the present invention, the MR head h shown in FIG.
2 is formed, or after the MR head h1 and the inductive head h2 are laminated and formed, a protective layer 47 is formed on the front end surface of the thin film magnetic head on the recording medium D side as shown in FIGS. In the present invention, it is preferable that the protective layer 47 is formed to have a thickness of 0.5 nm or more and 5 nm or less. As a result, spacing loss can be reduced, and a thin film magnetic head that can appropriately cope with higher recording density can be manufactured.

In the present invention, the protective layer 47 is formed by DLC.
(Diamond-like carbon) ta-C (Tetrahedra
It is preferable to form one kind or two or more kinds of (l Amorphous Carbon).

As described above, according to the present invention, by electrically connecting the lower shield layer 23 and the upper shield layer 32 with the conductive layer 43, the lower shield layer 23 and the upper shield layer 32 are connected to each other. Even if the potential and the solvent or water in the air during the manufacturing process of the thin film magnetic head penetrate into the protective layer 47 and the solvent or water reaches the lower shield layer 23 and the upper shield layer 32. The corrosion of the lower shield layer 23 and the upper shield layer 32 can be appropriately suppressed as compared with the conventional case.

Therefore, in the present invention, the thickness of the protective layer 47 is made thin in order to appropriately cope with the increase in recording density, and the solvent and the like are used in the lower shield layer 23 as compared with the conventional case.
Also, it is possible to manufacture a thin film magnetic head excellent in high recording density in which the lower shield layer 23 and the upper shield layer 32 are less likely to be corroded even if they reach the upper shield layer 32 more easily.

Further, in the present invention, the conductive layer 31 can be formed simultaneously with the main electrode layer 29 at the same time, and the conductive layer 31 can be easily and appropriately formed by a small number of steps.

Further, according to the present invention, by arranging the formation position of the conductive layer 31 particularly in the middle between the main electrode layers 29, 29 in the track width direction, an induced current is generated from the magnetoresistive effect element 25 or the like. Even if the shield layer 23,
The influence of the external magnetic field on 32 can be weakened, the shield function can be appropriately maintained, and a thin film magnetic head having excellent reproducing characteristics can be manufactured.

[0158]

According to the present invention described in detail above, by electrically connecting the lower shield layer and the upper shield layer with the conductive layer, the lower shield layer and the upper shield layer can be made to have the same potential, and the thin film Even if the solvent or water in the air during the manufacturing process of the magnetic head penetrates into the protective layer and the solvent or water reaches the lower shield layer and the upper shield layer, the lower shield layer and the upper portion Corrosion of the shield layer can be appropriately suppressed as compared with the conventional case.

For this reason, in the present invention, the thickness of the protective layer is made thin in order to properly cope with the high recording density, and the solvent and the like are applied to the lower shield layer and the upper shield layer more than ever before. It is possible to manufacture a thin film magnetic head excellent in high recording density in which the lower shield layer and the upper shield layer are less likely to corrode even if they are easily reached.

[Brief description of drawings]

FIG. 1 is a partial plan view of a thin film magnetic head according to the present invention,

2 is a partial vertical cross-sectional view of the thin film magnetic head when the thin film magnetic head is cut along the line 2-2 shown in FIG.

FIG. 3 is a partial vertical sectional view showing the structure of another thin film magnetic head according to the present invention,

FIG. 4 is a process chart showing the manufacturing process of the thin film magnetic head of the present invention shown in FIGS. 2 and 3;

FIG. 5 is a process chart performed after FIG. 4;

FIG. 6 is a process drawing performed after FIG. 5;

FIG. 7 is a process chart performed after FIG. 6;

8 is a process chart performed after FIG. 7,

FIG. 9 is a process chart performed after FIG. 8;

FIG. 10 is a process chart showing another manufacturing method of the present invention,

FIG. 11 is a process drawing showing another manufacturing method of the present invention,

FIG. 12 is a process chart performed after FIG.

FIG. 13 is a partial vertical cross-sectional view of a conventional thin film magnetic head,

[Explanation of symbols]

21 Thin film magnetic head 23 Lower shield layer 24 Lower gap layer 24a Hole (formed in the lower gap layer) 25 Magnetoresistive effect element 26 Hard bias layer 27 Electrode layer (sub-electrode layer) 28 Upper gap layer 28a Second hole 28b First hole 29 Main electrode layer 30 Insulating material layer 31 conductive layer 32 Upper shield layer 47 Protective layer 60, 61, 62, 64, 65, 67 Resist layer 63 Inorganic insulating material layer D recording medium h1 MR head h2 inductive head

─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. ⁷ Identification code FI theme code (reference) H01L 43/08 H01L 43/08 Z G01R 33/06 R (72) Inventor Hideyuki Hashimoto Otsuka, Ota-ku, Tokyo Otsuka Town 1-7 Alps Electric Co., Ltd. (72) Inventor Yasuhiro Kogawa Kawasaki Ota-ku, Tokyo Yutani Otsuka-cho 1-7 Alps Electric Co., Ltd. (72) Inventor Tomoo Otsuka 1 No. 7 F-term in Alps Electric Co., Ltd. (reference) 2G017 AA10 AD55 5D034 BA03 BA08 BA15 BA17 BB08 BB12 CA00 DA07 5E049 AA01 AA04 AA07 AC00 AC05 BA12 CB02 DB12 GC01 HC02

Claims (16)

[Claims] 1. A lower shield layer, a lower gap layer formed on the lower shield layer, and a predetermined length in a height direction from a front end face on the recording medium side on the lower gap layer. A magnetoresistive effect element, an upper gap layer formed on the magnetoresistive effect element to the lower gap layer, and an upper shield layer formed on the upper gap layer. A thin film magnetic head characterized in that the shield layer and the upper shield layer are electrically connected by a conductive layer penetrating the upper gap layer and the lower gap layer. 2. The thin-film magnetic head according to claim 1, wherein a main electrode layer is formed in conductive connection with the magnetoresistive effect element, and the conductive layer is formed of the same material as the main electrode layer. 3. The main electrode layer is formed to extend rearward in the height direction from both sides of the magnetoresistive effect element in the track width direction, and the conductive layer is formed between the main electrode layers in the track width direction. 1. The thin film magnetic head as described in 1 or 2. 4. The thin film magnetic head according to claim 3, wherein the conductive layer is formed in the middle between the main electrode layers in the track width direction. 5. The main electrode layer is formed on the upper gap layer, the main electrode layer is covered with an insulating material layer, and the upper shield layer is on the insulating material layer, the upper gap layer and the conductive layer. The thin film magnetic head according to claim 1, wherein the thin film magnetic head is formed. 6. The thin film magnetic head according to claim 1, wherein the cross-sectional area of the conductive layer in the direction parallel to the film surface is 1 μm ² or more and 500 μm ² or less. 7. A protective layer is formed on the front end surface of the recording medium side, and the thickness of the protective layer is 0.5 nm or more and 5 nm.
The thin film magnetic head according to claim 1, wherein: 8. The protective layer comprises DLC (diamond-like carbon), ta-C (Tetrahedral Amorphous).
8. The thin film magnetic head according to claim 7, wherein the thin film magnetic head is formed of one or more of carbon). 9. A method of manufacturing a thin film magnetic head, comprising the following steps. (A) forming a lower gap layer on the lower shield layer,
Forming a magnetoresistive effect element on the lower gap layer with a predetermined length in the height direction; (b) forming an upper gap layer from above the magnetoresistive effect element to the lower gap layer; ) A step of forming a hole portion penetrating to the lower shield layer in the lower gap layer and the upper gap layer, and forming a conductive layer in the hole portion, (d)
Forming an upper shield layer on the upper gap layer and on the conductive layer; 10. A method of manufacturing a thin-film magnetic head, comprising the following steps. (E) a step of forming a lower gap layer on the lower shield layer, and (f) a magnetoresistive effect element having a predetermined length in the height direction on the lower gap layer, and further, A hole is formed on the lower gap layer between the step of forming electrode layers on both sides in the track width direction, (g) between the steps (e) and (f), or after the electrode layer of the step (f) is formed. A step of forming an upper gap layer over the magnetoresistive effect element, the electrode layer and the lower gap layer, and (i) a hole in the lower gap layer in the step (g). A first hole is formed in the upper gap layer at the same position where the second hole is formed, and a second hole penetrating to the electrode layer is formed in the upper gap layer formed on the electrode layer. And (j) through the second hole Forming a main electrode layer over the partial gap layer and forming a conductive layer in the first hole, and (k) covering the main electrode layer with an insulating material, and forming the insulating material layer on the upper gap layer. Forming an upper shield layer on the upper and conductive layers. 11. The method of manufacturing a thin film magnetic head according to claim 10, wherein in the step (i), the first hole portion and the second hole portion are simultaneously formed in the upper gap layer. 12. The method of manufacturing a thin-film magnetic head according to claim 10, wherein in the step (j), the main electrode layer is formed, and at the same time, the conductive layer is formed of the same material as the main electrode layer. 13. In the step (j), the conductive layer is located between the main electrode layers in the track width direction,
A method of manufacturing a thin film magnetic head, wherein the main electrode layer and the conductive layer are formed. 14. The method of manufacturing a thin film magnetic head according to claim 13, wherein the main electrode layer and the conductive layer are formed so that the conductive layer is located in the middle between the main electrode layers in the track width direction. 15. After the steps (d) and (k), a protective layer is formed on the front end surface of the thin film magnetic head on the recording medium side, and the thickness of the protective layer is 0.5 nm or more and 5 nm or less. 15. A method of manufacturing a thin film magnetic head according to claim 9. 16. The protective layer is formed of DLC (diamond-like carbon), ta-C (Tetrahedral Amorphous).
16. The method of manufacturing a thin film magnetic head according to claim 15, wherein the thin film magnetic head is formed of one kind or two or more kinds of carbon).