JP2003078123A - Image sensing device - Google Patents

Image sensing device

Info

Publication number
JP2003078123A
JP2003078123A JP2001269625A JP2001269625A JP2003078123A JP 2003078123 A JP2003078123 A JP 2003078123A JP 2001269625 A JP2001269625 A JP 2001269625A JP 2001269625 A JP2001269625 A JP 2001269625A JP 2003078123 A JP2003078123 A JP 2003078123A
Authority
JP
Japan
Prior art keywords
image pickup
die
solid
package
chip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001269625A
Other languages
Japanese (ja)
Inventor
Kuniharu Uchigawa
邦治 内河
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP2001269625A priority Critical patent/JP2003078123A/en
Publication of JP2003078123A publication Critical patent/JP2003078123A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/1515—Shape
    • H01L2924/15153—Shape the die mounting substrate comprising a recess for hosting the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/15165—Monolayer substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/1615—Shape
    • H01L2924/16195—Flat cap [not enclosing an internal cavity]

Abstract

PROBLEM TO BE SOLVED: To eliminate the unevenness of an image without being given by an influence of the irregular shape of a die bonding adhesive agent interposed between an element chip and a die attach surface, when imaging an infrared ray. SOLUTION: A die bonding adhesive agent 2 is arranged in the outside area to avoid an area corresponding to the rear side of an imaging area 13 of a silicon chip 1, so that a reflecting light 10 on the joint surface between the silicon chip 1 and die attach surface 4 is made even on the entire surface of the imaging area 13, preventing the uneveness of an sensed image due to the irregularly diffused shape of the die bonding adhesive agent 2. An adhesive film is used as a die bonding adhesive agent 2, and it is entirely interposed between an area corresponding to the imaging area 13 on the rear side of the silicon chip 1 and the die attach surface 4 of a package 3. Thus, the reflecting light 10 entering the photo sensor of the silicon chip 1 from the die attach surface 4 is made even on the entire surface of the imaging area 13.

Description

【発明の詳細な説明】Detailed Description of the Invention

【０００１】[0001]

【発明の属する技術分野】本発明は、固体撮像素子チッ
プをダイボンド用接着剤を介してパッケージに接着固定
した撮像装置に関し、特に赤外線用の素子に用いて有効
な接着構造を有する撮像装置に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an image pickup device in which a solid-state image pickup device chip is adhered and fixed to a package via a die-bonding adhesive, and more particularly to an image pickup device having an adhesive structure effective for an infrared ray element. Is.

【０００２】[0002]

【従来の技術】従来より、例えば図６に示すようなパッ
ケージ構造を有する撮像装置が知られている。なお、図
６（ａ）は撮像装置の全体断面図、図６（ｂ）は図６
（ａ）の部分拡大断面図である。この撮像装置は、固体
撮像素子を搭載したシリコンチップ（すなわち、固体撮
像素子チップ）１と、このシリコンチップ１を収容する
樹脂製のパッケージ３とから構成される。シリコンチッ
プ１は、その表面６に固体撮像素子７の撮像エリアが配
置され、この撮像エリアの周囲にワイヤボンディング用
の電極が配置されている。また、パッケージ３は、シリ
コンチップ１を収容する収容凹部を有し、この収容凹部
の底面にパッケージ３を接着固定するためのダイアタッ
チ面４が形成されている。また、パッケージ３には、シ
リコンチップ１をワイヤボンディングするためのリード
フレーム１８が固着されており、パッケージ３の上面に
はパッケージ３の上面には透明カバー２０が装着されて
いる。そして、シリコンチップ１は、ダイボンド用接着
剤２によってパッケージ３のダイアタッチ面４に接着固
定され、ワイヤボンディングによってリードフレーム１
８に接続される。2. Description of the Related Art Conventionally, an image pickup device having a package structure as shown in FIG. 6 has been known. Note that FIG. 6A is an overall cross-sectional view of the image pickup apparatus, and FIG.
It is a partial expanded sectional view of (a). This image pickup device is composed of a silicon chip 1 (that is, a solid-state image pickup element chip) 1 on which a solid-state image pickup element is mounted, and a resin-made package 3 that houses the silicon chip 1. On the surface 6 of the silicon chip 1, an imaging area of the solid-state imaging device 7 is arranged, and electrodes for wire bonding are arranged around the imaging area. Further, the package 3 has an accommodating recess for accommodating the silicon chip 1, and a die attach surface 4 for adhering and fixing the package 3 is formed on the bottom surface of the accommodating recess. A lead frame 18 for wire-bonding the silicon chip 1 is fixed to the package 3, and a transparent cover 20 is attached to the upper surface of the package 3 on the upper surface of the package 3. Then, the silicon chip 1 is adhesively fixed to the die attach surface 4 of the package 3 by the die bonding adhesive 2, and the lead frame 1 is wire-bonded.
8 is connected.

【０００３】[0003]

【発明が解決しようとする課題】上述のような撮像装置
において、入射光５が可視光の場合には入射光５はシリ
コンチップ１を透過しないため、シリコンチップ１の表
面６に設けられた撮像素子７の撮像エリアへの入射光
は、シリコンチップ１の表面側からの入射光５だけであ
る。これに対し、赤外線用の固体撮像素子では、入射す
る赤外光８がシリコンチップ１を透過する性質を持つ。
そのため、撮像素子７には直接入射光８に加え、シリコ
ンチップ１を透過してダイアタッチ面４で反射した反射
光１０も入射することになる。In the above-described image pickup device, when the incident light 5 is visible light, the incident light 5 does not pass through the silicon chip 1, so that the image pickup provided on the surface 6 of the silicon chip 1 is performed. The incident light to the imaging area of the element 7 is only the incident light 5 from the front surface side of the silicon chip 1. On the other hand, in the solid-state imaging device for infrared rays, the incident infrared light 8 has a property of passing through the silicon chip 1.
Therefore, in addition to the direct incident light 8, the reflected light 10 transmitted through the silicon chip 1 and reflected by the die attach surface 4 is also incident on the image pickup element 7.

【０００４】次に、このような撮像装置におけるダイボ
ンド用接着剤２の作用について説明する。図７は、ダイ
アタッチ面４におけるダイボンド用接着剤２の塗布状態
を示す図であり、図７（ａ）はシリコンチップの接着前
の状態を示す平面図、図７（ｂ）はシリコンチップの接
着後の状態を示す透視図である。ダイボンド用接着剤２
には主に液状エポキシ樹脂が使用され、マルチノイズに
より図７（ａ）に示すようにディスペンス多点塗布する
のが一般的である。一方、シリコンチップ１の接着後
は、図７（ｂ）に示すように、シリコンチップ１の圧力
によってダイボンド用接着剤２が不規則に広がることに
なる。すなわち、マルチノイズによるディスペンス多点
塗布の場合には、シリコンチップ１の接着後の接着剤層
に気泡１１が混入したり、接着剤が広がらない接着剤未
充填領域１２が生じることになる。Next, the operation of the die-bonding adhesive 2 in such an image pickup device will be described. FIG. 7 is a diagram showing a state in which the die-bonding adhesive 2 is applied to the die attach surface 4, FIG. 7 (a) is a plan view showing a state before the silicon chip is adhered, and FIG. 7 (b) is a diagram showing the silicon chip. It is a perspective view showing the state after adhesion. Die bond adhesive 2
A liquid epoxy resin is mainly used for this purpose, and it is general to apply multiple points of dispense as shown in FIG. On the other hand, after the bonding of the silicon chip 1, the die bonding adhesive 2 spreads irregularly due to the pressure of the silicon chip 1, as shown in FIG. 7B. That is, in the case of dispensing multiple points of application by multi-noise, bubbles 11 are mixed in the adhesive layer after the silicon chip 1 is bonded, or an adhesive-unfilled region 12 where the adhesive does not spread occurs.

【０００５】そして、このようなダイボンド用接着剤２
の接着状態である場合、可視光では入射光がシリコンチ
ップ１を透過しないため、シリコンチップ１の下面にダ
イボンド用接着剤２が介在しても問題はない。しかし、
赤外線固体撮像素子では、ダイアタッチ面４からの反射
光１０が撮像素子７に入射するので、ダイボンド用接着
剤２が存在する領域では、接着剤に透過光０および反射
光１０の一部が吸収されて、撮像素子７に入射する反射
光１０は弱められるが、ダイボンド用接着剤２が存在し
ない気泡１１や未充填領域１２では、反射光１０が強い
ためコントラストが生じ、画像にダイボンド用接着剤２
の広がり形状がムラとなって映り込んでしまう問題点が
ある。Then, such a die-bonding adhesive 2 is used.
In the adhered state, the incident light with visible light does not pass through the silicon chip 1, so that there is no problem even if the die bonding adhesive 2 is interposed on the lower surface of the silicon chip 1. But,
In the infrared solid-state image pickup device, the reflected light 10 from the die attach surface 4 is incident on the image pickup device 7. Therefore, in the region where the die-bonding adhesive 2 is present, the transmitted light 0 and part of the reflected light 10 are absorbed by the adhesive. As a result, the reflected light 10 incident on the image sensor 7 is weakened, but in the bubble 11 and the unfilled region 12 where the die-bonding adhesive 2 does not exist, the reflected light 10 is strong, so that a contrast occurs, and the die-bonding adhesive is added to the image. Two
There is a problem that the spread shape of the image becomes uneven and is reflected.

【０００６】そこで本発明の目的は、素子チップとダイ
アタッチ面との間に介在するダイボンド用接着剤の影響
を受けずにムラのない画像を撮像できる撮像装置を提供
することにある。Therefore, an object of the present invention is to provide an image pickup apparatus capable of picking up a uniform image without being affected by the die-bonding adhesive interposed between the element chip and the die attach surface.

【０００７】[0007]

【課題を解決するための手段】上記目的を達成するた
め、本発明は、表面に撮像エリアを有する固体撮像素子
チップと、前記固体撮像素子チップを収容するパッケー
ジとを有し、前記固体撮像素子チップをパッケージにダ
イボンド用接着剤を介して接着固定した撮像装置におい
て、前記ダイボンド用接着剤を、前記固体撮像素子チッ
プの撮像エリアの裏側に対応する領域を避ける領域に配
置したことを特徴とする。In order to achieve the above object, the present invention has a solid-state image pickup device chip having an image pickup area on its surface, and a package for housing the solid-state image pickup device chip. In an imaging device in which a chip is bonded and fixed to a package via a die-bonding adhesive, the die-bonding adhesive is arranged in a region avoiding a region corresponding to the back side of the imaging area of the solid-state imaging device chip. .

【０００８】また、表面に撮像エリアを有する固体撮像
素子チップと、前記固体撮像素子チップを収容するパッ
ケージとを有し、前記固体撮像素子チップをパッケージ
にダイボンド用接着剤を介して接着固定した撮像装置に
おいて、前記ダイボンド用接着剤に接着フィルムを使用
し、前記固体撮像素子チップの撮像エリアの裏側に対応
する領域とパッケージのダイアタッチ面との間に全体的
に接着フィルムを介在させた状態で配置したことを特徴
とする。An image pickup device has a solid-state image pickup device chip having an image pickup area on its surface and a package for housing the solid-state image pickup device chip, and the solid-state image pickup device chip is bonded and fixed to the package via a die-bonding adhesive. In the device, an adhesive film is used as the die-bonding adhesive, and the adhesive film is entirely interposed between the area corresponding to the back side of the imaging area of the solid-state imaging device chip and the die attach surface of the package. It is characterized by being arranged.

【０００９】本発明の撮像装置では、パッケージと固体
撮像素子チップを接着固定するダイボンド用接着剤を、
固体撮像素子チップの撮像エリアの裏側に対応する領域
を避ける領域に配置したことから、固体撮像素子チップ
の撮像エリアの裏側にはダイボンド用接着剤が介在しな
いことになる。したがって、例えば赤外光を撮像する場
合でも、固体撮像素子チップの裏面側からの反射光を一
様にすることができ、ダイボンド用接着剤の影響を受け
ることなく、ムラのない画像を撮像できる。In the image pickup device of the present invention, a die-bonding adhesive for adhering and fixing the package and the solid-state image pickup device chip is used.
Since the solid-state image sensor chip is arranged in a region avoiding the region corresponding to the back side of the image-pickup area, the die-bonding adhesive does not intervene on the back side of the image-pickup area of the solid-state image-pickup chip. Therefore, even when capturing infrared light, for example, the reflected light from the back surface side of the solid-state image sensor chip can be made uniform, and a uniform image can be captured without being affected by the die-bonding adhesive. .

【００１０】また、本発明の撮像装置では、ダイボンド
用接着剤に接着フィルムを使用し、固体撮像素子チップ
の撮像エリアの裏側に対応する領域とパッケージのダイ
アタッチ面との間に全体的に接着フィルムを介在させた
状態で配置することにより、液状のダイボンド用接着剤
を用いた場合のような気泡や未充填領域をなくすことが
可能である。したがって、例えば赤外光を撮像する場合
でも、固体撮像素子チップの裏面側からの反射光を一様
にすることができ、ダイボンド用接着剤の影響を受ける
ことなく、ムラのない画像を撮像できる。Further, in the image pickup apparatus of the present invention, an adhesive film is used as the die-bonding adhesive, and the entire area is adhered between the area corresponding to the back side of the image pickup area of the solid-state image pickup element chip and the die attach surface of the package. By arranging the film with the film interposed, it is possible to eliminate bubbles and unfilled areas as in the case of using a liquid die-bonding adhesive. Therefore, even when capturing infrared light, for example, the reflected light from the back surface side of the solid-state image sensor chip can be made uniform, and a uniform image can be captured without being affected by the die-bonding adhesive. .

【００１１】[0011]

【発明の実施の形態】以下、本発明の実施の形態につい
て図面を参照して詳細に説明する。なお、以下に説明す
る実施の形態は、本発明の好適な具体例であり、技術的
に好ましい種々の限定が付されているが、本発明の範囲
は、以下の説明において、特に本発明を限定する旨の記
載がない限り、これらの態様に限定されないものとす
る。本実施の形態は、赤外線の撮像を行う撮像装置にお
いて、固体撮像素子をパッケージに接着固定するための
ダイボンド用接着剤の不規則な拡散形状が撮影画像にム
ラとなって現れてしまう問題を解決するものである。な
お、以下に説明する各実施の形態において、上述した従
来例と共通する構成について同一符号を用いて説明す
る。BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. The embodiments described below are preferred specific examples of the present invention, and various technically preferable limitations are given. However, the scope of the present invention is not limited to the present invention in the following description. Unless otherwise stated, the present invention is not limited to these embodiments. The present embodiment solves the problem that the irregular diffusion shape of the die-bonding adhesive for adhering and fixing the solid-state image sensor to the package appears unevenly in the captured image in the image capturing apparatus that captures infrared rays. To do. In addition, in each embodiment described below, the same components as those in the above-described conventional example will be described using the same reference numerals.

【００１２】図１は、本発明の第１の実施の形態による
赤外線撮像装置の構造を示す図であり、図１（ａ）は全
体平面図、図１（ｂ）は全体断面図、図１（ｃ）は図１
（ｂ）の部分拡大断面図である。上述した従来例と同様
に、本例の撮像装置では、固体撮像素子を搭載したシリ
コンチップ（すなわち、固体撮像素子チップ）１が、リ
ードフレーム１８を設けた樹脂製のパッケージ３のチッ
プ収容凹部に装着される。シリコンチップ１は、表面６
の中央に固体撮像素子７の撮像エリア１３が配置され、
この撮像エリア１３の周囲にワイヤボンディング用の電
極が配置されている。また、パッケージ３は、中央にシ
リコンチップ１を収容するチップ収容凹部が形成され、
その底面にパッケージ３を接着固定するためのダイアタ
ッチ面４が形成され、シリコンチップ１は、ダイボンド
用接着剤２によってパッケージ３のダイアタッチ面４に
接着固定されている。また、パッケージ３の上面にはパ
ッケージ３の上面には透明カバー２０が装着され、チッ
プ収容凹部を閉蓋している。また、パッケージ３の外周
部には、シリコンチップ１をワイヤボンディングするた
めのリードフレーム１８が固着されており、チップ収容
凹部の外側近傍部にリードフレーム１８のインナリード
部が配置され、シリコンチップ１の電極とリードフレー
ム１８のインナリード部がワイヤボンディングされてい
る。1A and 1B are views showing the structure of an infrared imaging device according to a first embodiment of the present invention. FIG. 1A is an overall plan view, FIG. 1B is an overall sectional view, and FIG. Figure 1 (c) is
It is a partial expanded sectional view of (b). Similar to the conventional example described above, in the image pickup apparatus of this example, the silicon chip (that is, the solid-state image pickup element chip) 1 on which the solid-state image pickup element is mounted is provided in the chip housing recess of the resin package 3 provided with the lead frame 18. It is installed. The silicon chip 1 has a surface 6
The imaging area 13 of the solid-state image sensor 7 is arranged at the center of
Electrodes for wire bonding are arranged around the imaging area 13. Further, the package 3 is formed with a chip accommodating recess for accommodating the silicon chip 1 in the center,
A die attach surface 4 for adhesively fixing the package 3 is formed on the bottom surface thereof, and the silicon chip 1 is adhesively fixed to the die attach surface 4 of the package 3 by the die bonding adhesive 2. A transparent cover 20 is mounted on the upper surface of the package 3 to close the chip accommodating recess. Further, a lead frame 18 for wire-bonding the silicon chip 1 is fixed to the outer peripheral portion of the package 3, and the inner lead portion of the lead frame 18 is arranged near the outer side of the chip accommodating recess. The electrode and the inner lead portion of the lead frame 18 are wire-bonded.

【００１３】そして、この第１の実施の形態では、ダイ
ボンド用接着剤２を、シリコンチップ１の撮像エリア１
３の裏側に対応する領域を避ける外側の領域に配置する
ことにより、シリコンチップ１とダイアタッチ面４の接
着面からの反射光１０を撮像エリア１３全面にわたって
一様にし、ダイボンド用接着剤２の不規則な拡散形状に
よる撮影画像のムラを防止するものである。すなわち、
図１（ｃ）に示すように、ダイボンド用接着剤２はシリ
コンチップ１の裏面の外周縁部寄りに塗布され、撮像エ
リア１３に対応する領域を避ける状態で配置されてい
る。これにより、ダイアタッチ面４からシリコンチップ
１のフォトセンサに入射する反射光１０は撮像エリア１
３全面にわたり一様な反射光となり、撮影画像にダイボ
ンド用接着剤２の拡散形状がムラとして現れなくなる。In the first embodiment, the die-bonding adhesive 2 is applied to the imaging area 1 of the silicon chip 1.
By arranging it in an outer region avoiding a region corresponding to the back side of 3, the reflected light 10 from the bonding surface between the silicon chip 1 and the die attach surface 4 is made uniform over the entire imaging area 13, and the adhesive for die bonding 2 is formed. It is intended to prevent unevenness of a captured image due to an irregular diffusion shape. That is,
As shown in FIG. 1C, the die-bonding adhesive 2 is applied near the outer peripheral edge of the back surface of the silicon chip 1 and is arranged in a state of avoiding the area corresponding to the imaging area 13. As a result, the reflected light 10 that enters the photo sensor of the silicon chip 1 from the die attach surface 4 is reflected by the imaging area 1
3 The reflected light becomes uniform over the entire surface, and the diffused shape of the die-bonding adhesive 2 does not appear as unevenness in the captured image.

【００１４】図２は、本発明の第２の実施の形態による
赤外線撮像装置の構造を示す図であり、図２（ａ）は全
体平面図、図２（ｂ）は全体断面図である。この第２の
実施の形態は、上述した図１に示す例でダイボンド用接
着剤２をシリコンチップ１の撮像エリア１３の裏側に対
応する領域を避ける外側の領域に配置する場合に、ダイ
ボンド用接着剤２の塗布領域を十分な面積で確保するた
めに、シリコンチップ１の外周部に延在部１５を付加し
たものである。通常の固体撮像素子では、チップの表面
積の大部分を撮像エリア１３が占めており、それ以外の
周辺部分は非常に少ない。このためシリコンチップ１を
貼り付ける時のダイボンド用接着剤２の拡大やダイボン
ド用接着剤２の流動性により、接着剤２が撮像エリア１
３まではみ出してくる可能性があり、図１に示す基本構
造を実現するためには、接着剤の特性改善や接着剤の塗
布制御に関して高度な技術が必要になる。そこで、より
簡単に上記の構造を実現するための手段として、接着の
ための領域を確保すべく、本来のチップサイズ１４に接
着のための領域（延在部）１５を追加したものである。2A and 2B are views showing the structure of an infrared image pickup device according to a second embodiment of the present invention. FIG. 2A is an overall plan view, and FIG. 2B is an overall sectional view. In the second embodiment, when the die bonding adhesive 2 is arranged in an area outside the area corresponding to the back side of the imaging area 13 of the silicon chip 1 in the example shown in FIG. In order to secure a sufficient area for applying the agent 2, an extending portion 15 is added to the outer peripheral portion of the silicon chip 1. In a normal solid-state imaging device, the imaging area 13 occupies most of the surface area of the chip, and other peripheral portions are very small. For this reason, due to the expansion of the die-bonding adhesive 2 when the silicon chip 1 is attached and the fluidity of the die-bonding adhesive 2, the adhesive 2 can be applied to the imaging area 1.
3 may be protruded, and in order to realize the basic structure shown in FIG. 1, advanced technology is required for improving the characteristics of the adhesive and controlling the application of the adhesive. Therefore, as a means for realizing the above structure more easily, in order to secure an area for adhesion, an area (extension part) 15 for adhesion is added to the original chip size 14.

【００１５】図３は、本発明の第３の実施の形態による
赤外線撮像装置の構造を示す図であり、図３（ａ）は全
体平面図、図３（ｂ）は全体断面図、図３（ｃ）は図３
（ｂ）の部分拡大断面図である。この第３の実施の形態
は、ダイボンド用接着剤２がシリコンチップ１の撮像エ
リア１３の裏側に対応する領域にはみ出すことを防止す
るためのはみ出し規制部として、パッケージ３のダイア
タッチ面３に樹脂止め用の突起部１６を設けたものであ
る。この突起部１６は、撮像エリア１３の裏側に対応す
る領域に沿って形成されている。ダイボンド用接着剤２
は、突起部１６の外側に塗布されており、シリコンチッ
プ１の接合圧力がかかっても、突起部１６によって撮像
エリア１３側には広がらない。これにより、ダイアタッ
チ面４からの反射光１０は撮像エリア全面にわたり一様
になり、撮影画像にムラが映り込むことを防止できる。3A and 3B are views showing the structure of an infrared imaging device according to a third embodiment of the present invention. FIG. 3A is an overall plan view, FIG. 3B is an overall sectional view, and FIG. (C) is FIG.
It is a partial expanded sectional view of (b). In the third embodiment, a resin is attached to the die attach surface 3 of the package 3 as a protrusion control portion for preventing the die bonding adhesive 2 from protruding to a region corresponding to the back side of the imaging area 13 of the silicon chip 1. A protrusion 16 for stopping is provided. The protrusion 16 is formed along the area corresponding to the back side of the imaging area 13. Die bond adhesive 2
Is applied to the outside of the protruding portion 16 and does not spread to the imaging area 13 side by the protruding portion 16 even when the bonding pressure of the silicon chip 1 is applied. As a result, the reflected light 10 from the die attach surface 4 becomes uniform over the entire imaging area, and it is possible to prevent unevenness from appearing in the captured image.

【００１６】なお、ダイボンド用接着剤２のはみ出し規
制部としては突起部１６の代わりに段部を設けても良
い。すなわち、ダイアタッチ面４の撮像エリア１３に対
応する領域を全体的に突出させることにより、ダイボン
ド用接着剤２の塗布領域との間で段差を形成すること
で、図３に示す例と同様にダイボンド用接着剤２の撮像
エリア１３側へのはみ出しを防止できる。A step portion may be provided in place of the protruding portion 16 as a protrusion control portion of the die bonding adhesive 2. That is, a step is formed between the area corresponding to the imaging area 13 of the die attach surface 4 and the area where the die-bonding adhesive 2 is applied, as in the example shown in FIG. It is possible to prevent the die-bonding adhesive 2 from protruding to the imaging area 13 side.

【００１７】図４は、本発明の第４の実施の形態による
赤外線撮像装置の構造を示す図であり、図４（ａ）は全
体断面図、図４（ｂ）は図４（ａ）の部分拡大断面図で
ある。この第４の実施の形態は、ダイボンド用接着剤を
固体撮像素子チップの外側面１６とパッケージのチップ
収容凹部の内側面との間に配置したものである。このよ
うにシリコンチップ１とパッケージ３の接着を、シリコ
ンチップ１の外側面１６を利用して行うことで、撮像エ
リア１３の裏面には接着剤が存在しないことになり、画
像ムラを防止できる。4A and 4B are views showing the structure of an infrared imaging device according to a fourth embodiment of the present invention. FIG. 4A is an overall sectional view, and FIG. 4B is a sectional view of FIG. 4A. It is a partially expanded sectional view. In the fourth embodiment, a die-bonding adhesive is arranged between the outer surface 16 of the solid-state image sensor chip and the inner surface of the chip accommodating recess of the package. By thus bonding the silicon chip 1 and the package 3 by using the outer surface 16 of the silicon chip 1, the adhesive does not exist on the back surface of the imaging area 13, so that image unevenness can be prevented.

【００１８】図５は、本発明の第５の実施の形態による
赤外線撮像装置の構造を示す図であり、図５（ａ）は全
体断面図、図５（ｂ）は図５（ａ）の部分拡大断面図で
ある。この第５の実施の形態は、パッケージ３のダイア
タッチ面４に撮像エリア１３に対応する凹部１９を設
け、この凹部１９の外側領域にダイボンド用接着剤２を
設けるようにしたものである。この構造では、ダイボン
ド用接着剤２がその表面張力等により凹部１９の外側領
域に留まった状態で保持され、凹部１９内には流入しな
いことから、撮像エリア１３の裏面には接着剤が存在し
ないことになり、画像ムラを防止できる。なお、このよ
うな凹部１９は、パッケージ３側でなくシリコンチップ
１側に設けても良い。5A and 5B are views showing the structure of an infrared image pickup device according to a fifth embodiment of the present invention. FIG. 5A is an overall sectional view, and FIG. 5B is a view of FIG. 5A. It is a partially expanded sectional view. In the fifth embodiment, a recess 19 corresponding to the image pickup area 13 is provided on the die attach surface 4 of the package 3, and the die-bonding adhesive 2 is provided outside the recess 19. In this structure, the die-bonding adhesive 2 is retained in a region outside the recess 19 due to its surface tension and the like, and does not flow into the recess 19, so that there is no adhesive on the back surface of the imaging area 13. This makes it possible to prevent image unevenness. The recess 19 may be provided on the silicon chip 1 side instead of the package 3 side.

【００１９】また、撮像エリア１３の裏面に接着剤をは
み出さないようにするための方法としては、ダイボンド
用接着剤２に液状接着剤の代わりに、接着フィルムを用
いることも可能である。As a method for preventing the adhesive from sticking out to the back surface of the image pickup area 13, it is possible to use an adhesive film instead of the liquid adhesive for the die-bonding adhesive 2.

【００２０】また、本発明の第６の実施の形態として、
図では示さないが、ダイボンド用接着剤２に接着フィル
ムを使用し、シリコンチップ１の裏側の撮像エリア１３
に対応する領域とパッケージ３のダイアタッチ面４との
間に全体的に接着フィルムを介在させた状態で配置する
ようにしてもよい。すなわち、図７で説明したシリコン
チップ１とパッケージ３との間の気泡１１や未充填領域
１２は、ダイボンド用接着剤２に液状接着剤を用いるこ
とにより生じるものであることから、ダイボンド用接着
剤２に接着フィルムを用い、シリコンチップ１とパッケ
ージ３との間に均一に配置するようにすれば、ダイアタ
ッチ面４からシリコンチップ１のフォトセンサに入射す
る反射光１０は撮像エリア１３全面にわたり一様な反射
光となり、撮影画像にダイボンド用接着剤２の拡散形状
がムラとして現れなくなる。これにより、画像ムラを防
止できる。このような構成も本発明に含まれるものであ
る。Further, as a sixth embodiment of the present invention,
Although not shown in the figure, an adhesive film is used for the die-bonding adhesive 2, and the imaging area 13 on the back side of the silicon chip 1 is used.
It may be arranged such that an adhesive film is entirely interposed between the region corresponding to the and the die attach surface 4 of the package 3. That is, the air bubble 11 and the unfilled region 12 between the silicon chip 1 and the package 3 described in FIG. If an adhesive film is used for 2 and it is arranged evenly between the silicon chip 1 and the package 3, the reflected light 10 incident on the photosensor of the silicon chip 1 from the die attach surface 4 is uniform over the entire imaging area 13. Such reflected light is generated, and the diffused shape of the die-bonding adhesive 2 does not appear as unevenness in the captured image. Thereby, image unevenness can be prevented. Such a configuration is also included in the present invention.

【００２１】以上のような本発明の各実施の形態を採用
することにより、シリコンチップ１の裏面側からの反射
光を一様にすることができるため、赤外線用固体撮像装
置においてダイボンド用接着剤の広がり形状が画像に映
り込む問題を解決することができる。なお、本発明にか
かる撮像装置は、上記各実施の形態で説明した構成のも
のに限定されず、本発明の要旨を逸脱しない範囲で種々
の変形が可能である。また、上述の説明は、本発明を赤
外線用撮像装置に適用した例を説明したが、本発明は、
その他の波長特性を有する撮像装置についても同様に適
用が可能である。By adopting each of the embodiments of the present invention as described above, it is possible to make the reflected light from the back surface side of the silicon chip 1 uniform, so that an adhesive for die bonding in an infrared solid-state image pickup device. It is possible to solve the problem that the spread shape of the image is reflected in the image. The image pickup apparatus according to the present invention is not limited to the configurations described in the above embodiments, and various modifications can be made without departing from the gist of the present invention. Further, although the above description has described an example in which the present invention is applied to an infrared imaging device, the present invention is
The same can be applied to an imaging device having other wavelength characteristics.

【００２２】[0022]

【発明の効果】以上のように、本発明の撮像装置によれ
ば、パッケージと固体撮像素子チップを接着固定するダ
イボンド用接着剤を、固体撮像素子チップの撮像エリア
の裏側に対応する領域を避ける領域に配置したことか
ら、固体撮像素子チップの撮像エリアの裏側にはダイボ
ンド用接着剤が介在しないことになり、固体撮像素子チ
ップの裏面側からの反射光を一様にすることができ、ダ
イボンド用接着剤の影響を受けることなく、ムラのない
画像を撮像できる。As described above, according to the image pickup apparatus of the present invention, the die-bonding adhesive for adhering and fixing the package and the solid-state image pickup element chip to avoid the area corresponding to the back side of the image pickup area of the solid-state image pickup element chip. Since it is located in the area, the die-bonding adhesive does not intervene on the back side of the imaging area of the solid-state image sensor chip, and the light reflected from the back side of the solid-state image sensor chip can be made uniform. A uniform image can be captured without being affected by the adhesive for use.

【００２３】また、本発明の撮像装置によれば、ダイボ
ンド用接着剤に接着フィルムを使用し、固体撮像素子チ
ップの撮像エリアの裏側に対応する領域とパッケージの
ダイアタッチ面との間に全体的に接着フィルムを介在さ
せた状態で配置することにより、液状のダイボンド用接
着剤を用いた場合のような気泡や未充填領域をなくすこ
とが可能であり、固体撮像素子チップの裏面側からの反
射光を一様にすることができ、ダイボンド用接着剤の影
響を受けることなく、ムラのない画像を撮像できる。Further, according to the image pickup apparatus of the present invention, an adhesive film is used as the die-bonding adhesive, and the entire area is provided between the area corresponding to the back side of the image pickup area of the solid-state image pickup element chip and the die attach surface of the package. By arranging the adhesive film with the adhesive film in between, it is possible to eliminate bubbles and unfilled areas as in the case of using a liquid die-bonding adhesive, and the reflection from the back side of the solid-state image sensor chip is eliminated. The light can be made uniform, and a uniform image can be captured without being affected by the die-bonding adhesive.

【図面の簡単な説明】[Brief description of drawings]

【図１】本発明の第１の実施の形態による赤外線撮像装
置の構造を示す全体平面図、全体断面図、及び部分拡大
断面図である。FIG. 1 is an overall plan view, an overall sectional view, and a partially enlarged sectional view showing the structure of an infrared imaging device according to a first embodiment of the present invention.

【図２】本発明の第２の実施の形態による赤外線撮像装
置の構造を示す全体平面図、及び全体断面図である。FIG. 2 is an overall plan view and an overall sectional view showing the structure of an infrared imaging device according to a second embodiment of the present invention.

【図３】本発明の第３の実施の形態による赤外線撮像装
置の構造を示す全体平面図、全体断面図、及び部分拡大
断面図である。FIG. 3 is an overall plan view, an overall cross-sectional view, and a partially enlarged cross-sectional view showing the structure of an infrared imaging device according to a third embodiment of the present invention.

【図４】本発明の第４の実施の形態による赤外線撮像装
置の構造を示す全体断面図、及び部分拡大断面図であ
る。FIG. 4 is an overall sectional view and a partially enlarged sectional view showing a structure of an infrared imaging device according to a fourth embodiment of the present invention.

【図５】本発明の第５の実施の形態による赤外線撮像装
置の構造を示す全体断面図、及び部分拡大断面図であ
る。FIG. 5 is an overall sectional view showing a structure of an infrared imaging device according to a fifth embodiment of the present invention, and a partially enlarged sectional view.

【図６】従来例による赤外線撮像装置の構造を示す全体
断面図、及び部分拡大断面図である。6A and 6B are an overall sectional view and a partially enlarged sectional view showing a structure of an infrared imaging device according to a conventional example.

【図７】図６に示す撮像装置におけるダイボンド用接着
剤の塗布状態を示す接着前の平面図、及び接着後の透視
図である。7A and 7B are a plan view before bonding and a perspective view after bonding showing a coating state of a die-bonding adhesive in the imaging device shown in FIG.

【符号の説明】[Explanation of symbols]

１……シリコンチップ、２……ダイボンド用接着剤、３
……パッケージ、４……ダイアタッチ面、６……チップ
表面、７……撮像素子、１３……撮像エリア、１８……
リードフレーム、２０……透明カバー。1 ... Silicon chip, 2 ... Die bond adhesive, 3
...... Package, 4 ...... Die attach surface, 6 ...... Chip surface, 7 ...... Imaging element, 13 ...... Imaging area, 18 ......
Lead frame, 20 ... Transparent cover.

Claims (14)

【特許請求の範囲】[Claims] 【請求項１】 表面に撮像エリアを有する固体撮像素子
チップと、前記固体撮像素子チップを収容するパッケー
ジとを有し、前記固体撮像素子チップをパッケージにダ
イボンド用接着剤を介して接着固定した撮像装置におい
て、 前記ダイボンド用接着剤を、前記固体撮像素子チップの
撮像エリアの裏側に対応する領域を避ける領域に配置し
た、 ことを特徴とする撮像装置。1. An image pickup device comprising: a solid-state image pickup device chip having an image pickup area on a surface thereof; and a package accommodating the solid-state image pickup device chip, wherein the solid-state image pickup device chip is bonded and fixed to the package via a die bonding adhesive. In the device, the die-bonding adhesive is arranged in a region avoiding a region corresponding to a back side of an image pickup area of the solid-state image pickup element chip. 【請求項２】 前記ダイボンド用接着剤を固体撮像素子
チップの裏面とパッケージ側のダイアタッチ面との間に
配置したことを特徴とする請求項１記載の撮像装置。2. The image pickup device according to claim 1, wherein the die-bonding adhesive is arranged between the back surface of the solid-state image pickup element chip and the die-attach surface on the package side. 【請求項３】 前記ダイボンド用接着剤を固体撮像素子
チップの外側面とパッケージのチップ収容凹部の内側面
との間に配置したことを特徴とする請求項１記載の撮像
装置。3. The image pickup apparatus according to claim 1, wherein the die-bonding adhesive is arranged between an outer side surface of the solid-state image pickup element chip and an inner side surface of a chip accommodating recess of the package. 【請求項４】 前記固体撮像素子チップの外周部に前記
ダイボンド用接着剤を配置する領域を確保するための延
在部を付加したことを特徴とする請求項１記載の撮像装
置。4. The image pickup apparatus according to claim 1, wherein an extension portion is added to an outer peripheral portion of the solid-state image pickup element chip to secure a region for arranging the die-bonding adhesive. 【請求項５】 前記ダイボンド用接着剤が前記固体撮像
素子チップの撮像エリアの裏側に対応する領域にはみ出
すことを防止するためのはみ出し規制部を設けたことを
特徴とする請求項１記載の撮像装置。5. The image pick-up device according to claim 1, further comprising a protrusion control portion for preventing the die-bonding adhesive from protruding to a region corresponding to the back side of the image pickup area of the solid-state image pickup element chip. apparatus. 【請求項６】 前記はみ出し規制部は、パッケージのダ
イアタッチ面に設けた段部であることを特徴とする請求
項５記載の撮像装置。6. The image pickup apparatus according to claim 5, wherein the protrusion restricting portion is a step portion provided on a die attach surface of the package. 【請求項７】 前記はみ出し規制部は、パッケージのダ
イアタッチ面に設けた突起部であることを特徴とする請
求項５記載の撮像装置。7. The image pickup apparatus according to claim 5, wherein the protrusion limiting portion is a protrusion provided on a die attach surface of the package. 【請求項８】 前記固体撮像素子チップの裏面またはパ
ッケージのダイアタッチ面のいずれか一方に撮像エリア
に対応する凹部を設け、前記凹部の外側領域に前記ダイ
ボンド用接着剤を塗布するようにしたことを特徴とする
請求項１記載の撮像装置。8. A recess corresponding to an imaging area is provided on either the back surface of the solid-state imaging device chip or the die attach surface of the package, and the die-bonding adhesive is applied to an area outside the recess. The image pickup apparatus according to claim 1, wherein: 【請求項９】 前記ダイボンド用接着剤に接着フィルム
を使用したことを特徴とする請求項１記載の撮像装置。9. The image pickup device according to claim 1, wherein an adhesive film is used as the die-bonding adhesive. 【請求項１０】 前記ダイアタッチ面が前記パッケージ
のチップ収容部の底面部に設けられていることを特徴と
する請求項１記載の撮像装置。10. The image pickup apparatus according to claim 1, wherein the die attach surface is provided on a bottom surface portion of a chip accommodating portion of the package. 【請求項１１】 前記ダイアタッチ面が前記パッケージ
に装着されるリードフレームのインナーリード部に設け
られていることを特徴とする請求項１記載の撮像装置。11. The image pickup device according to claim 1, wherein the die attach surface is provided on an inner lead portion of a lead frame mounted on the package. 【請求項１２】 前記固体撮像素子が赤外線用の素子で
あることを特徴とする請求項１記載の撮像装置。12. The image pickup apparatus according to claim 1, wherein the solid-state image pickup element is an infrared ray element. 【請求項１３】 表面に撮像エリアを有する固体撮像素
子チップと、前記固体撮像素子チップを収容するパッケ
ージとを有し、前記固体撮像素子チップをパッケージに
ダイボンド用接着剤を介して接着固定した撮像装置にお
いて、 前記ダイボンド用接着剤に接着フィルムを使用し、 前記固体撮像素子チップの撮像エリアの裏側に対応する
領域とパッケージのダイアタッチ面との間に全体的に接
着フィルムを介在させた状態で配置した、 ことを特徴とする撮像装置。13. A solid-state image pickup device chip having an image pickup area on a surface thereof, and a package accommodating the solid-state image pickup device chip, wherein the solid-state image pickup device chip is bonded and fixed to the package via a die bonding adhesive. In the device, an adhesive film is used as the die-bonding adhesive, and the adhesive film is entirely interposed between the region corresponding to the back side of the imaging area of the solid-state imaging device chip and the die attach surface of the package. An image pickup device, wherein the image pickup device is arranged. 【請求項１４】 前記固体撮像素子が赤外線用の素子で
あることを特徴とする請求項１３記載の撮像装置。14. The image pickup apparatus according to claim 13, wherein the solid-state image pickup element is an infrared ray element.
JP2001269625A 2001-09-06 2001-09-06 Image sensing device Pending JP2003078123A (en)

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JP2017001104A (en) * 2015-06-04 2017-01-05 富士電機株式会社 Electronic device

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EP1526578A3 (en) * 2003-10-23 2006-04-12 Matsushita Electric Industrial Co., Ltd. Solid-state imaging device
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