JP2003073844A - Electroless plating method - Google Patents

Electroless plating method

Info

Publication number
JP2003073844A
JP2003073844A JP2001268417A JP2001268417A JP2003073844A JP 2003073844 A JP2003073844 A JP 2003073844A JP 2001268417 A JP2001268417 A JP 2001268417A JP 2001268417 A JP2001268417 A JP 2001268417A JP 2003073844 A JP2003073844 A JP 2003073844A
Authority
JP
Japan
Prior art keywords
resin substrate
plating
electroless plating
view
roughening treatment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2001268417A
Other languages
Japanese (ja)
Inventor
Hideyuki Sagawa
英之 佐川
Toru Washimi
亨 鷲見
Akira Sato
亮 佐藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Cable Ltd
Original Assignee
Hitachi Cable Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Cable Ltd filed Critical Hitachi Cable Ltd
Priority to JP2001268417A priority Critical patent/JP2003073844A/en
Publication of JP2003073844A publication Critical patent/JP2003073844A/en
Withdrawn legal-status Critical Current

Links

Abstract

PROBLEM TO BE SOLVED: To provide an electroless plating method which does not need roughening treatment by chemicals, when electroless-plating a resin substrate which incorporates a plating catalyst. SOLUTION: This method is characterized by forming mechanical recesses on the resin substrate which incorporates the plating catalyst, before electroless plating it, and making the recesses have a shape like a wedge or a hole, depths of about 10 μm, and distances among the recesses of about 50 μm.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【発明の属する技術分野】本発明は、樹脂基板上に無電
解めっきを行なうときに、薬品による粗面化処理を必要
としない無電解めっき方法に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electroless plating method which does not require surface roughening treatment with a chemical when electroless plating is performed on a resin substrate.

【0002】[0002]

【従来の技術】従来、樹脂基板上に無電解めっきを行な
う場合、めっき析出反応を起させるために、めっき触媒
を樹脂基板上に塗布するか、若しくはめっき触媒を混練
した樹脂基板の表面を薬品によって粗面化処理(粗化)
して、めっき触媒を樹脂基板表面に露出させた。然る後
に、上記の処理を施した樹脂基板を無電解めっき液に所
定の時間だけ浸漬して、樹脂基板表面にめっき膜を形成
していた。
2. Description of the Related Art Conventionally, when electroless plating is performed on a resin substrate, a plating catalyst is coated on the resin substrate or a surface of the resin substrate kneaded with the plating catalyst is chemically treated in order to cause a plating deposition reaction. Roughening treatment (roughening)
Then, the plating catalyst was exposed on the surface of the resin substrate. After that, the resin substrate subjected to the above treatment was immersed in an electroless plating solution for a predetermined time to form a plating film on the surface of the resin substrate.

【0003】[0003]

【発明が解決しようとする課題】従来の無電解めっき方
法には、以下に説明する問題点があった。 (1)めっき触媒を樹脂基板上に塗布して無電解めっき
を行なう場合、めっき触媒の塗布は主にめっき触媒を含
む溶液への浸漬作業によって行なわれるために、パター
ン形成などのめっき析出部の選択性が殆どない。 (2)めっき触媒を混練させた樹脂基板上に無電解めっ
きを行なう場合は、樹脂基板表面の樹脂層(スキン層)
を除去して、めっき触媒を露出させる必要があるため、
通常薬品による粗面化処理が行なわれる。耐薬品性に優
れた樹脂基板では、この粗面化処理が困難であり、例え
ばエポキシ樹脂基板の場合、Cr硫酸などの劇薬を用い
た作業に限られていた。
The conventional electroless plating method has the following problems. (1) When electroless plating is performed by coating a plating catalyst on a resin substrate, the plating catalyst is mainly applied by dipping in a solution containing the plating catalyst. There is almost no selectivity. (2) When electroless plating is performed on a resin substrate in which a plating catalyst is kneaded, a resin layer (skin layer) on the surface of the resin substrate
Is required to expose the plating catalyst,
Surface roughening is usually performed with chemicals. This roughening treatment is difficult with a resin substrate having excellent chemical resistance, and for example, in the case of an epoxy resin substrate, it has been limited to work using a powerful chemical such as Cr sulfuric acid.

【0004】従って本発明の目的は、前記した従来技術
の問題点を解決し、めっき触媒を混練した樹脂基板上に
無電解めっきを行なうときに、薬品による粗面化処理を
必要としない無電解めっき方法を提供することにある。
Therefore, an object of the present invention is to solve the above-mentioned problems of the prior art, and to perform electroless plating on a resin substrate mixed with a plating catalyst, which does not require roughening treatment by chemicals. It is to provide a plating method.

【0005】[0005]

【課題を解決するための手段】本発明の無電解めっき方
法は、上記の目的を達成するため、樹脂基板上に機械的
な凹部を施してから無電解めっきを行なうようにした。
In the electroless plating method of the present invention, in order to achieve the above object, mechanical recesses are formed on a resin substrate and then electroless plating is performed.

【0006】樹脂基板にはめっき触媒を混練した。A plating catalyst was kneaded with the resin substrate.

【0007】機械的な凹部は、クサビ型若しくは穴状と
した。
The mechanical recess is wedge-shaped or hole-shaped.

【0008】このクサビ型若しくは穴状凹部は、深さが
約10μmであり、且つ間隔を約50μmで形成した。
The wedge-shaped or hole-shaped recesses were formed with a depth of about 10 μm and an interval of about 50 μm.

【0009】無電解めっきの金属塩は銅とした。The metal salt for electroless plating was copper.

【0010】[0010]

【発明の実施の形態】発明の実施の形態を以下、図面に
基づいて詳述する。
BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described in detail below with reference to the drawings.

【0011】図1は、本発明の無電解めっき方法の第一
実施例について示したものであって、(a)は粗面化処
理した樹脂基板の斜視図、(b)は粗面化処理した樹脂
基板の断面図、(c)は粗面化処理した後に無電解めっ
きを行なった樹脂基板の断面図である。図2は、めっき
触媒としてPd粉を混練したポリスチレン成形樹脂基板
の斜視図である。1は樹脂基板、2はクサビ型凹(溝)
部、4は無電解銅めっき膜である。
1A and 1B show a first embodiment of the electroless plating method of the present invention. FIG. 1A is a perspective view of a resin substrate subjected to a surface roughening treatment, and FIG. 1B is a surface roughening treatment. FIG. 3C is a cross-sectional view of the resin substrate, and FIG. 6C is a cross-sectional view of the resin substrate subjected to the electroless plating after the roughening treatment. FIG. 2 is a perspective view of a polystyrene molded resin substrate in which Pd powder is kneaded as a plating catalyst. 1 is a resin substrate, 2 is a wedge-shaped recess (groove)
Parts 4 are electroless copper plating films.

【0012】樹脂基板1は、ポリスチレンを5cm×5cm
の正方形で厚さ1cmに射出成形したものである。ポリス
チレンにはめっきが析出する核となるように、めっき触
媒であるPd粉が混練されている。
The resin substrate 1 is made of polystyrene 5 cm × 5 cm
It is injection molded into a square with a thickness of 1 cm. Pd powder, which is a plating catalyst, is kneaded into polystyrene so that it serves as a nucleus for plating deposition.

【0013】この樹脂基板1に、金属製の針を用い粗面
化処理として、長さ5cm、表面から深さ方向に約10μ
mの鋭角な溝、すなわちクサビ型凹(溝)部2を約50
μm間隔で形成した。そして、このクサビ型凹(溝)部
2を形成した樹脂基板1を無電解銅めっき液に約8時間
浸漬したところ、めっきがクサビ型凹(溝)部2からま
ず垂直方向に成長し、その後、水平方向に成長すること
で樹脂基板1の表面全体を覆った。つまり、平均厚さ約
12μm の無電解めっきを行なうことができ、めっき
膜の表面は樹脂基板1上に形成したクサビ型凹(溝)部
2の凹部の影響は無く平坦であった。
As a roughening treatment using a metal needle on the resin substrate 1, the length is 5 cm, and the depth from the surface is about 10 μm.
A sharp groove of m, that is, the wedge-shaped recess (groove) 2 is about 50
It was formed at μm intervals. When the resin substrate 1 having the wedge-shaped recess (groove) 2 formed therein was immersed in an electroless copper plating solution for about 8 hours, the plating first grew vertically from the wedge-shaped recess (groove) 2 and then , The entire surface of the resin substrate 1 was covered by growing in the horizontal direction. That is, electroless plating having an average thickness of about 12 μm can be performed, and the surface of the plating film is flat without being affected by the concave portion of the wedge-shaped concave portion (groove) portion 2 formed on the resin substrate 1.

【0014】図3は、第一実施例に対する第一比較例で
あって、(a)は粗面化処理した樹脂基板の斜視図、
(b)は粗面化処理した樹脂基板の断面図、(c)は粗
面化処理した後に無電解めっきを行なった樹脂基板の断
面図である。図2と同一条件で成形した樹脂基板1に、
粗面化処理として図1と同じ5cmの長さで、表面から深
さ方向に約10μm のクサビ型凹(溝)部2を、今度
は約100μm 間隔で形成した。このように加工した
樹脂基板1を無電解銅めっき液に約8時間浸漬したとこ
ろ、図3(c)に示すようにクサビ型凹(溝)部2の部
分に無電解銅めっき粒子5が付着したが水平方向には成
長しなかった。
FIG. 3 is a first comparative example to the first embodiment, in which (a) is a perspective view of a resin substrate subjected to a roughening treatment,
(B) is a cross-sectional view of a resin substrate subjected to a roughening treatment, and (c) is a cross-sectional view of a resin substrate subjected to electroless plating after the roughening treatment. On the resin substrate 1 molded under the same conditions as in FIG.
As the roughening treatment, wedge-shaped concave portions (grooves) 2 having a length of 5 cm as in FIG. 1 and a depth of about 10 μm from the surface were formed at intervals of about 100 μm. When the resin substrate 1 thus processed was immersed in an electroless copper plating solution for about 8 hours, electroless copper plating particles 5 adhered to the wedge-shaped concave (groove) portion 2 as shown in FIG. 3 (c). However, it did not grow horizontally.

【0015】図4は、第一実施例に対する第二比較例で
あって、(a)は粗面化処理した樹脂基板の斜視図、
(b)は粗面化処理した樹脂基板の断面図、(c)は粗
面化処理した後に無電解めっきを行なった樹脂基板の断
面図である。図2と同一条件で成形した樹脂基板1に、
粗面化処理として図1と同じ5cmの長さで、今度は表面
から深さ方向に約5μm のクサビ型凹(溝)部2を、
図1と同じ約50μm 間隔で形成した。このように加
工した樹脂基板1を無電解銅めっき液に約8時間浸漬し
たところ、図3(c)に示すようにめっきの析出反応は
全く起こらなかった。
FIG. 4 is a second comparative example with respect to the first embodiment, in which (a) is a perspective view of a roughened resin substrate,
(B) is a cross-sectional view of a resin substrate subjected to a roughening treatment, and (c) is a cross-sectional view of a resin substrate subjected to electroless plating after the roughening treatment. On the resin substrate 1 molded under the same conditions as in FIG.
As a roughening treatment, the wedge-shaped concave (groove) portion 2 having a length of 5 cm as in FIG. 1 and having a depth of about 5 μm from the surface,
The layers were formed at the same intervals of about 50 μm as in FIG. When the resin substrate 1 thus processed was immersed in an electroless copper plating solution for about 8 hours, no plating precipitation reaction occurred as shown in FIG. 3 (c).

【0016】図5は、第一実施例に対する第三比較例で
あって、(a)は薬品により粗面化処理した樹脂基板の
斜視図、(b)は薬品により粗面化処理した樹脂基板の
断面図、(c)は薬品により粗面化処理した後に無電解
めっきを行なった樹脂基板の断面図である。3は薬品に
よる粗面化処理面である。図2に示す樹脂基板1を、C
r酸/硫酸混合溶液を用いて約15分間粗化処理を行な
った。その後、この薬品による粗面化処理面3を施した
樹脂基板1を無電解銅めっき液に約8時間浸漬したとこ
ろ、図5(c)に示すように約12μm の厚さの平坦
なめっき膜が形成された。
FIG. 5 is a third comparative example to the first embodiment, (a) is a perspective view of a resin substrate surface-roughened by chemicals, and (b) is a resin substrate surface-roughened by chemicals. And (c) is a sectional view of a resin substrate which has been subjected to electroless plating after being roughened by a chemical. 3 is a surface roughened by chemicals. The resin substrate 1 shown in FIG.
A roughening treatment was performed for about 15 minutes using the r acid / sulfuric acid mixed solution. Then, the resin substrate 1 having the surface 3 roughened by this chemical was dipped in an electroless copper plating solution for about 8 hours. As a result, as shown in FIG. 5 (c), a flat plating film having a thickness of about 12 μm was formed. Was formed.

【0017】図6は、本発明の無電解めっき方法の第二
実施例について示したものであって、(a)は粗面化処
理した樹脂基板の斜視図、(b)は粗面化処理した樹脂
基板の断面図、(c)は粗面化処理した後に無電解めっ
きを行なった樹脂基板の断面図である。6は穴状凹
(溝)部である。
6A and 6B show a second embodiment of the electroless plating method of the present invention. FIG. 6A is a perspective view of a resin substrate subjected to a surface roughening treatment, and FIG. 6B is a surface roughening treatment. FIG. 3C is a cross-sectional view of the resin substrate, and FIG. 6C is a cross-sectional view of the resin substrate subjected to the electroless plating after the roughening treatment. 6 is a hole-shaped recess (groove).

【0018】樹脂基板1は、第一実施例の場合と同様
に、ポリスチレンを5cm×5cmの正方形で厚さ1cmに射
出成形したものである。ポリスチレンにはめっきが析出
する核となるように、めっき触媒であるPd粉が混練さ
れている。
The resin substrate 1 is, as in the case of the first embodiment, made by injection molding polystyrene into a square of 5 cm × 5 cm to a thickness of 1 cm. Pd powder, which is a plating catalyst, is kneaded into polystyrene so that it serves as a nucleus for plating deposition.

【0019】この樹脂基板1に、金属製の針を用いて粗
面化処理として、穴径が約500μm、表面から深さ方
向に約10μmの溝、すなわち穴状凹(溝)部6を約5
0μm間隔で形成した。そして、この穴状凹(溝)部6
を形成した樹脂基板1を無電解銅めっき液に約6時間浸
漬したところ、めっきが穴状凹(溝)部6からまず垂直
方向に成長し、その後、水平方向に成長することで樹脂
基板1の表面全体を覆った。つまり、平均厚さ約10μ
mの無電解めっきを行なうことができ、めっき膜の表面
は樹脂基板1上に形成した穴状凹(溝)部6の凹部の影
響は無く平坦であった。
On this resin substrate 1, as a roughening treatment using a metal needle, a groove having a hole diameter of about 500 μm and a depth of about 10 μm from the surface, that is, a hole-shaped concave portion 6 is formed. 5
It was formed at intervals of 0 μm. Then, this hole-shaped concave (groove) portion 6
When the resin substrate 1 on which the resin was formed is immersed in an electroless copper plating solution for about 6 hours, the plating first grows vertically from the hole-shaped recess (groove) 6 and then grows horizontally to form the resin substrate 1. Covered the entire surface of. That is, the average thickness is about 10μ
m electroless plating could be performed, and the surface of the plating film was flat without being affected by the concave portions of the hole-shaped concave portions (grooves) 6 formed on the resin substrate 1.

【0020】図7は、第二実施例に対する第一比較例で
あって、(a)は粗面化処理した樹脂基板の斜視図、
(b)は粗面化処理した樹脂基板の断面図、(c)は粗
面化処理した後に無電解めっきを行なった樹脂基板の断
面図である。図2と同一条件で成形した樹脂基板1に、
粗面化処理として図6と同じ穴径が約500μmで、表
面から深さ方向に約10μmの穴状凹(溝)部6を、今
度は約100μm間隔で形成した。このように加工した
樹脂基板1を無電解銅めっき液に約6時間浸漬したとこ
ろ、図7(c)に示すように穴状凹(溝)部6の部分に
無電解銅めっき粒子5が付着したが水平方向には成長し
なかった。
FIG. 7 is a first comparative example to the second embodiment, in which (a) is a perspective view of a roughened resin substrate,
(B) is a cross-sectional view of a resin substrate subjected to a roughening treatment, and (c) is a cross-sectional view of a resin substrate subjected to electroless plating after the roughening treatment. On the resin substrate 1 molded under the same conditions as in FIG.
As the surface roughening treatment, the same hole diameter as in FIG. 6 was about 500 μm, and the hole-shaped concave portions (grooves) 6 of about 10 μm from the surface in the depth direction were formed at intervals of about 100 μm this time. When the resin substrate 1 thus processed was dipped in an electroless copper plating solution for about 6 hours, electroless copper plating particles 5 were attached to the hole-shaped concave (groove) portions 6 as shown in FIG. 7C. However, it did not grow horizontally.

【0021】図8は、第二実施例に対する第二比較例で
あって、(a)は粗面化処理した樹脂基板の斜視図、
(b)は粗面化処理した樹脂基板の断面図、(c)は粗
面化処理した後に無電解めっきを行なった樹脂基板の断
面図である。図2と同一条件で成形した樹脂基板1に、
粗面化処理として図6と同じ穴径約500μmで、今度
は表面から深さ方向に約5μmの穴状凹(溝)部6を、
図6と同じ約50μm間隔で形成した。このように加工
した樹脂基板1を無電解銅めっき液に約6時間浸漬した
ところ、図7(c)に示すようにめっきの析出反応は全
く起こらなかった。
FIG. 8 is a second comparative example for the second embodiment, in which (a) is a perspective view of a resin substrate subjected to a roughening treatment,
(B) is a cross-sectional view of a resin substrate subjected to a roughening treatment, and (c) is a cross-sectional view of a resin substrate subjected to electroless plating after the roughening treatment. On the resin substrate 1 molded under the same conditions as in FIG.
As the roughening treatment, the hole-shaped concave (groove) portion 6 having the same hole diameter of about 500 μm as in FIG. 6 and about 5 μm in the depth direction from the surface is formed.
It was formed at the same intervals of about 50 μm as in FIG. When the resin substrate 1 thus processed was immersed in an electroless copper plating solution for about 6 hours, no plating deposition reaction occurred as shown in FIG. 7 (c).

【0022】図9は、第二実施例に対する第三比較例で
あって、(a)は薬品により粗面化処理した樹脂基板の
斜視図、(b)は薬品により粗面化処理した樹脂基板の
断面図、(c)は薬品により粗面化処理した後に無電解
めっきを行なった樹脂基板の断面図である。図2に示す
樹脂基板1を、Cr酸/硫酸混合溶液を用いて約15分
間粗化処理を行なった。その後、この薬品による粗面化
処理面3を施した樹脂基板1を無電解銅めっき液に約6
時間浸漬したところ、図9(c)に示すように約10μ
mの厚さの平坦なめっき膜が形成された。
FIG. 9 is a third comparative example to the second embodiment, in which (a) is a perspective view of a resin substrate surface-roughened by chemicals, and (b) is a resin substrate surface-roughened by chemicals. And (c) is a sectional view of a resin substrate which has been subjected to electroless plating after being roughened by a chemical. The resin substrate 1 shown in FIG. 2 was subjected to a roughening treatment for about 15 minutes using a Cr acid / sulfuric acid mixed solution. Thereafter, the resin substrate 1 having the surface 3 to be roughened by this chemical is immersed in an electroless copper plating solution for about 6 times.
After soaking for about 10 minutes, as shown in Fig. 9 (c)
A flat plating film having a thickness of m was formed.

【0023】以上、本発明の要点は、薬品による粗化処
理の危険性、作業性の悪さを排除したことにあり、改善
策として、めっき触媒を混練した樹脂基板上に機械的な
凹部を施すことによって、めっきの析出を可能とせしめ
たことにある。
As described above, the main point of the present invention is to eliminate the risk of roughening treatment by chemicals and poor workability. As a remedy, a mechanical recess is formed on a resin substrate kneaded with a plating catalyst. This makes it possible to deposit plating.

【0024】機械的粗面化処理は、樹脂成形時に形成さ
れた触媒を含まない表面層(スキン層)の厚さ以上に行
なわなければならない。また、めっき触媒が露出してい
ても起伏のない平滑な表面では無電解めっきは行なえな
い。前述の各種の比較例から以下の事柄を結論すること
ができる。
The mechanical surface-roughening treatment must be performed to a thickness not less than the thickness of the catalyst-free surface layer (skin layer) formed during resin molding. Further, even if the plating catalyst is exposed, electroless plating cannot be performed on a smooth surface without undulations. The following can be concluded from the various comparative examples described above.

【0025】無電解銅めっきの場合、めっきの成長は金
属銅の析出と析出した銅の溶解反応を繰り返しながら成
膜が進行するため、樹脂基板上に核となって析出したC
uが容易に溶解しないような、よどみ点(活性点)とし
て、表面から深さ方向に約10μm以上の凹部が必要で
ある。又、樹脂基板の凹部から成長しためっき核が、表
面に達した後に横方向に成長するためには、凹部を約5
0μm間隔で形成する必要がある。なお、凹部の形状と
して、クサビ型や同心円状の穴状の場合を実施例として
説明したが、上記の条件を満たせば如何なる形状であっ
ても構わない。
In the case of electroless copper plating, the growth of plating proceeds as the film formation proceeds by repeating the deposition of metallic copper and the dissolution reaction of the deposited copper, so that C deposited as nuclei on the resin substrate is deposited.
As a stagnation point (active point) where u is not easily dissolved, a recess of about 10 μm or more is required in the depth direction from the surface. In addition, in order for the plating nuclei grown from the recess of the resin substrate to grow laterally after reaching the surface, about 5
It is necessary to form them at intervals of 0 μm. In addition, as the shape of the concave portion, the case of the wedge shape or the concentric circular hole shape has been described as an example, but any shape may be used as long as the above conditions are satisfied.

【0026】[0026]

【発明の効果】本発明の無電解めっき方法によれば、め
っき触媒を混練した樹脂基板上に機械的な凹部(深さが
約10μmであり、且つ間隔は約50μm)を形成して
から無電解めっきを行なうようにしたので、薬品による
粗面化処理を全く必要としないという効果を発揮する。
EFFECTS OF THE INVENTION According to the electroless plating method of the present invention, mechanical recesses (having a depth of about 10 μm and an interval of about 50 μm) are formed on a resin substrate mixed with a plating catalyst, and then the Since electrolytic plating is performed, the effect that no roughening treatment with a chemical is required is exhibited.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の、無電解めっき方法の第一実施例につ
いて示したものであって、(a)は粗面化処理した樹脂
基板の斜視図、(b)は粗面化処理した樹脂基板の断面
図、(c)は粗面化処理した後に無電解めっきを行なっ
た樹脂基板の断面図である。
FIG. 1 shows a first embodiment of an electroless plating method of the present invention, in which (a) is a perspective view of a resin substrate subjected to a surface roughening treatment, and (b) is a resin subjected to the surface roughening treatment. Sectional drawing of a board | substrate, (c) is a sectional view of the resin board which electrolessly plated after the roughening process.

【図2】めっき触媒としてPd粉を混練した、ポリスチ
レン成形樹脂基板の斜視図である。
FIG. 2 is a perspective view of a polystyrene molded resin substrate in which Pd powder is kneaded as a plating catalyst.

【図3】第一実施例に対する第一比較例であって、
(a)は粗面化処理した樹脂基板の斜視図、(b)は粗
面化処理した樹脂基板の断面図、(c)は粗面化処理し
た後に無電解めっきを行なった樹脂基板の断面図であ
る。
FIG. 3 is a first comparative example for the first embodiment,
(A) is a perspective view of the roughened resin substrate, (b) is a cross-sectional view of the roughened resin substrate, and (c) is a cross section of the resin substrate subjected to the electroless plating after the roughening treatment. It is a figure.

【図4】第一実施例に対する第二比較例であって、
(a)は粗面化処理した樹脂基板の斜視図、(b)は粗
面化処理した樹脂基板の断面図、(c)は粗面化処理し
た後に無電解めっきを行なった樹脂基板の断面図であ
る。
FIG. 4 is a second comparative example with respect to the first embodiment,
(A) is a perspective view of the roughened resin substrate, (b) is a cross-sectional view of the roughened resin substrate, and (c) is a cross section of the resin substrate subjected to the electroless plating after the roughening treatment. It is a figure.

【図5】第一実施例に対する第三比較例であって、
(a)は薬品により粗面化処理した樹脂基板の斜視図、
(b)は薬品により粗面化処理した樹脂基板の断面図、
(c)は薬品により粗面化処理した後に無電解めっきを
行なった樹脂基板の断面図である。
FIG. 5 is a third comparative example for the first embodiment,
(A) is a perspective view of a resin substrate roughened by chemicals,
(B) is a cross-sectional view of a resin substrate roughened by a chemical,
(C) is a cross-sectional view of a resin substrate subjected to electroless plating after being roughened by a chemical.

【図6】本発明の、無電解めっき方法の第二実施例につ
いて示したものであって、(a)は粗面化処理した樹脂
基板の斜視図、(b)は粗面化処理した樹脂基板の断面
図、(c)は粗面化処理した後に無電解めっきを行なっ
た樹脂基板の断面図である。
6A and 6B show a second embodiment of the electroless plating method of the present invention, in which FIG. 6A is a perspective view of a roughened resin substrate, and FIG. 6B is a roughened resin. Sectional drawing of a board | substrate, (c) is a sectional view of the resin board which electrolessly plated after the roughening process.

【図7】第二実施例に対する第一比較例であって、
(a)は粗面化処理した樹脂基板の斜視図、(b)は粗
面化処理した樹脂基板の断面図、(c)は粗面化処理し
た後に無電解めっきを行なった樹脂基板の断面図であ
る。
FIG. 7 is a first comparative example for the second embodiment,
(A) is a perspective view of the roughened resin substrate, (b) is a cross-sectional view of the roughened resin substrate, and (c) is a cross section of the resin substrate subjected to the electroless plating after the roughening treatment. It is a figure.

【図8】第二実施例に対する第二比較例であって、
(a)は粗面化処理した樹脂基板の斜視図、(b)は粗
面化処理した樹脂基板の断面図、(c)は粗面化処理し
た後に無電解めっきを行なった樹脂基板の断面図であ
る。
FIG. 8 is a second comparative example for the second embodiment,
(A) is a perspective view of the roughened resin substrate, (b) is a cross-sectional view of the roughened resin substrate, and (c) is a cross section of the resin substrate subjected to the electroless plating after the roughening treatment. It is a figure.

【図9】第二実施例に対する第三比較例であって、
(a)は薬品により粗面化処理した樹脂基板の斜視図、
(b)は薬品により粗面化処理した樹脂基板の断面図、
(c)は薬品により粗面化処理した後に無電解めっきを
行なった樹脂基板の断面図である。
FIG. 9 is a third comparative example for the second embodiment,
(A) is a perspective view of a resin substrate roughened by chemicals,
(B) is a cross-sectional view of a resin substrate roughened by a chemical,
(C) is a cross-sectional view of a resin substrate subjected to electroless plating after being roughened by a chemical.

【符号の説明】[Explanation of symbols]

1 樹脂基板 2 クサビ型凹(溝)部 3 薬品による粗面化処理面 4 無電解めっき膜 5 無電解めっき粒子 6 穴状凹(溝)部 1 resin substrate 2 wedge-shaped recess (groove) Surface roughened by 3 chemicals 4 Electroless plating film 5 Electroless plating particles 6 Hole-shaped recess (groove)

フロントページの続き (72)発明者 佐藤 亮 茨城県日立市日高町5丁目1番1号 日立 電線株式会社日高工場内 Fターム(参考) 4K022 AA13 AA26 AA37 BA08 BA31 BA35 CA02 CA04 CA21 CA29 DA01 5E343 AA02 AA12 BB24 CC73 DD33 EE33 ER02 GG02 Continued front page    (72) Inventor Ryo Sato             Hitachi, 1-1 Hidaka-cho, Hitachi City, Ibaraki Prefecture             Electric Wire Co., Ltd. Hidaka Factory F term (reference) 4K022 AA13 AA26 AA37 BA08 BA31                       BA35 CA02 CA04 CA21 CA29                       DA01                 5E343 AA02 AA12 BB24 CC73 DD33                       EE33 ER02 GG02

Claims (5)

【特許請求の範囲】[Claims] 【請求項1】樹脂基板上に機械的な凹部を施してから無
電解めっきを行なうことを特徴とする無電解めっき方
法。
1. An electroless plating method, which comprises performing a mechanical recess on a resin substrate and then performing electroless plating.
【請求項2】樹脂基板はめっき触媒が混練されているこ
とを特徴とする請求項1記載の無電解めっき方法。
2. The electroless plating method according to claim 1, wherein the resin substrate is kneaded with a plating catalyst.
【請求項3】機械的な凹部はクサビ型若しくは穴状であ
ることを特徴とする請求項1記載の無電解めっき方法。
3. The electroless plating method according to claim 1, wherein the mechanical recess has a wedge shape or a hole shape.
【請求項4】機械的な凹部は深さが約10μmであり、
且つ間隔を約50μmで形成することを特徴とする請求
項1から3いずれかに記載の無電解めっき方法。
4. The mechanical recess has a depth of about 10 μm,
The electroless plating method according to any one of claims 1 to 3, characterized in that the intervals are formed at about 50 µm.
【請求項5】無電解めっきの金属塩は銅であることを特
徴とする請求項1記載の無電解めっき方法。
5. The electroless plating method according to claim 1, wherein the metal salt for electroless plating is copper.
JP2001268417A 2001-09-05 2001-09-05 Electroless plating method Withdrawn JP2003073844A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001268417A JP2003073844A (en) 2001-09-05 2001-09-05 Electroless plating method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001268417A JP2003073844A (en) 2001-09-05 2001-09-05 Electroless plating method

Publications (1)

Publication Number Publication Date
JP2003073844A true JP2003073844A (en) 2003-03-12

Family

ID=19094401

Family Applications (1)

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Country Status (1)

Country Link
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JP2006219752A (en) * 2005-02-14 2006-08-24 Canon Inc Production method of structure
JP2008522038A (en) * 2004-12-03 2008-06-26 スリーエム イノベイティブ プロパティズ カンパニー Microfabrication using patterned topography and self-assembled monolayers
JP2010135719A (en) * 2008-12-08 2010-06-17 Kinko Denshi Kofun Yugenkoshi Process for manufacturing circuit board, and the circuit board
WO2013024793A1 (en) * 2011-08-12 2013-02-21 シャープ株式会社 Structure and structure manufacturing method
WO2018066203A1 (en) * 2016-10-05 2018-04-12 国立大学法人北陸先端科学技術大学院大学 Composite member and method for producing same
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Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008522038A (en) * 2004-12-03 2008-06-26 スリーエム イノベイティブ プロパティズ カンパニー Microfabrication using patterned topography and self-assembled monolayers
JP4662994B2 (en) * 2004-12-03 2011-03-30 スリーエム イノベイティブ プロパティズ カンパニー Microfabrication using patterned topography and self-assembled monolayers
JP2006219752A (en) * 2005-02-14 2006-08-24 Canon Inc Production method of structure
JP2010135719A (en) * 2008-12-08 2010-06-17 Kinko Denshi Kofun Yugenkoshi Process for manufacturing circuit board, and the circuit board
WO2013024793A1 (en) * 2011-08-12 2013-02-21 シャープ株式会社 Structure and structure manufacturing method
JP2013059015A (en) * 2011-08-12 2013-03-28 Sharp Corp Structure and manufacturing method of the same
WO2018066203A1 (en) * 2016-10-05 2018-04-12 国立大学法人北陸先端科学技術大学院大学 Composite member and method for producing same
JP6337363B1 (en) * 2016-10-05 2018-06-06 国立大学法人北陸先端科学技術大学院大学 Composite member and manufacturing method thereof
JP7114945B2 (en) 2018-03-07 2022-08-09 日立金属株式会社 Differential signal transmission cable, multicore cable, and method for manufacturing differential signal transmission cable

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