JP2003060304A - Optical integrated element - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a two-beam laser for which the aspect ratio of the far-field pattern of laser light is made to approximate to one, and a laser beam printer incorporated with the two-beam laser. SOLUTION: An optical integrated element has an n-type GaAs substrate, an n-type clad layer and an active layer successively laminated upon the main surface of the substrate, and a plurality of stripe-like p-type clad layers formed above the active layer at prescribed distances. The element also has an n-type semiconductor layer formed from both sides of the p-type clad layers to the upper surface of the active layer and a p-type semiconductor layer covering the n-type semiconductor layer and stripe-like p-type clad layers. The element emits laser light from the end faces of the active layer, corresponding to the stripe-like p-type clad layers. The widths and thicknesses of the p-type clad layers are respectively adjusted to be about 1 μm and <=1 submicron, so that the far-field pattern of the laser light becomes <1.3.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a monolithic optical integrated device having a plurality of semiconductor lasers and an optoelectronic device such as a laser beam printer or a rotary laser device incorporating the optical integrated device, and more particularly to a laser light far-field image. The present invention relates to a technique effectively applied to a technique for producing an aspect ratio (ratio of a vertical direction angle and a horizontal direction angle) of a cross section at a predetermined ratio.

[0002]

2. Description of the Related Art Semiconductor lasers are widely used as light sources for information processing devices such as laser beam printers and DVDs (Digital Versatile Disks). The red semiconductor laser for DVD is described, for example, in "Electronic Materials", November 1999 issue, P41-P46, published by the Industrial Research Board. Further, the same magazines P55 and P56 describe a 1-chip 2-wavelength laser diode and a monolithic 2-wavelength semiconductor laser for reproducing a CD / DVD.

Further, Japanese Patent Laid-Open No. 3-32082 describes a semiconductor laser device using an inclined surface. In such a laser structure, the inclined surface is used as a region where laser light is generated. With this, the stripe width can be narrowed and the horizontal far-field image angle can be increased, so that the aspect ratio can be reduced.

On the other hand, IEEE JOURNAL OF QUANTUM ELECTRON
ICS.VOL.29, NO.6, JUNE 1993, PP1874-1879, 670
nm window structure laser diodes are described. This document describes that the thickness of the n-type and p-type cladding layers is 1.5 μm.

On the other hand, Baifukan, "Semiconductor Laser [Basics and Applications]", issued April 25, 1989, P316 to P319, discloses the basic configuration of a laser beam printer device. And Applied Technology ", published September 10, 1986, P174 to P179, describes the basic configuration of a laser beam printer, an optical system including an fθ lens, and a semiconductor laser.

[0006]

In the semiconductor laser for information processing, efforts have been made to make the spot light of the laser light close to a circular shape from the viewpoint of effective use thereof. For example, in DVDs, efforts have been made to approximate the aspect ratio of the far-field image of laser light (laser beam) to 1 in order to increase the recording capacity.

According to the above-mentioned document, in the case of the red semiconductor laser for DVD, the vertical divergence angle is 3 for CD as a typical example.
7 °, horizontal spread angle is 11 °, aspect ratio is 3.36, vertical spread angle is 27 ° for DVD.
The horizontal spread angle is 8 ° and the aspect ratio is 3.375.
become. Further, the laser diode having the window structure has an aspect ratio of 2.1. Further, in other examples of the above-mentioned documents, the aspect ratio is 1.3.

68 used as a light source of an information processing device
As described above, the 0 nm band conventional semiconductor laser has a large aspect ratio of the far-field image. For this reason, the laser beam printer needs an optical system for correcting the beam cross-sectional shape into a circular shape, and there is a concern that the cost of the laser beam printer will increase.

An object of the present invention is to provide an optical integrated device having one to a plurality of semiconductor lasers capable of approximating the aspect ratio of a far-field image of laser light to one, and an optoelectronic device incorporating the optical integrated device. To provide.

Another object of the present invention is to monolithically integrate one or a plurality of semiconductor lasers capable of approximating the aspect ratio of the far-field pattern of laser light to one on the same semiconductor chip,
And an optical integrated device capable of individually controlling each semiconductor laser,
Another object of the present invention is to provide an optoelectronic device incorporating the optical integrated device.

Another object of the present invention is to provide a semiconductor laser in which the aspect ratio of the far-field pattern is close to 1, and the aspect ratio is 2.
An object of the present invention is to provide an optical integrated device in which the above semiconductor lasers are monolithically integrated on the same semiconductor chip, and each semiconductor laser can be individually controlled, and an optoelectronic device incorporating the optical integrated device.

The above and other objects and novel features of the present invention will be apparent from the description of the present specification and the accompanying drawings.

[0013]

The outline of the representative ones of the inventions disclosed in the present application will be briefly described as follows.

(1) A compound semiconductor substrate and a clad layer of a first conductivity type, for example, an n-type (n-type clad layer), an active layer, and a stripe-shaped first layer, which are sequentially formed on the main surface of the compound semiconductor substrate. Two conductivity type, for example, p-type clad layer (p
Type clad layer), an n-type semiconductor layer formed on both sides of the striped p-type clad layer over the active layer, and the n-type semiconductor layer and the striped p-type clad layer. An optical integrated device having a p-type semiconductor layer, and a semiconductor laser configured to emit laser light from an end face of the active layer corresponding to the p-type cladding layer,
The stripe-shaped p-type cladding layer has a width of about 1 μm and a thickness of submicron or less so that the aspect ratio of the far-field image of the laser light is smaller than 1.3. A p-type layer having the same composition as the stripe-shaped p-type clad layer is formed on the active layer, and
An etching stop layer at the time of etching for forming stripes of the stripe-shaped p-type cladding layer is provided on the p-type layer, and the stripe-shaped p-type cladding layer is present on the etch stop layer. . The total thickness of the p-type layer, the etch stop layer, and the stripe-shaped p-type cladding layer is less than or equal to submicron. The compound semiconductor substrate is an n-GaAs substrate, the n-type cladding layer is an n-AlGaInP layer, the active layer is an undoped GaInP layer, and the striped p-type cladding layer is a p-AlGaInP layer. The wavelength of the laser light is 0.68 μm.

(2) A compound semiconductor substrate, a clad layer of the first conductivity type, for example, an n-type clad layer (n-type clad layer) and an active layer, which are sequentially formed on the main surface of the compound semiconductor substrate, and the active layer. A plurality of stripe-shaped second conductivity type, for example, p-type clad layers (p
Type clad layer), an n-type semiconductor layer formed on both sides of the striped p-type clad layer over the active layer, and the n-type semiconductor layer and the striped p-type clad layer. An optical integrated device comprising a semiconductor laser having a p-type semiconductor layer and emitting laser light from an end face of the active layer corresponding to each stripe-shaped p-type clad layer. The width of the striped p-type clad layer is about 1 μm and the thickness is less than submicron so that the aspect ratio of the far-field image is less than 1.3. A p-type layer having the same composition as the stripe-shaped p-type cladding layer is formed on the active layer, and the stripe-shaped p-type cladding layer is formed on the p-type layer during etching. An etch stop layer is provided, and the striped p-type cladding layer is present on the etch stop layer. The total thickness of the p-type layer, the etch stop layer, and the stripe-shaped p-type cladding layer is less than or equal to submicron. The compound semiconductor substrate is an n-GaAs substrate, and the n-type clad layer is n-type.
AlGaInP layer, and the active layer is undoped Ga
An InP layer, the stripe-shaped p-type cladding layer is a p-AlGaInP layer, and the wavelength of laser light is 0.6.
It is 8 μm.

A laser beam printer incorporating such an optical integrated device has the following configuration. A laser beam printer configured to irradiate a rotary polygon mirror with laser light emitted from an optical integrated device having a semiconductor laser through a shape correction optical system, and irradiate the reflected light as a minute spot on a photosensitive drum surface through an Fθ lens. The optical integrated device is formed by a compound semiconductor substrate, an n-type clad layer and an active layer which are sequentially stacked on the main surface of the compound semiconductor substrate, and a predetermined distance above the active layer. A plurality of striped p-type clad layers, an n-type semiconductor layer formed on both sides of the striped p-type clad layer over the active layer, the n-type semiconductor layer and the striped p-type A semiconductor layer having a p-type semiconductor layer covering the clad layer and emitting laser light from the end face of the active layer corresponding to each of the stripe-shaped p-type clad layers. The stripe-shaped p-type cladding layer has a thickness of submicron or less so that the far field pattern of the laser beam has an aspect ratio of less than 1.3. ing.

According to the above means (1), the thickness of the clad layer can be reduced, so that the stripe width can be reduced. By narrowing the stripe width, the horizontal angle of the far-field image can be increased, the ratio of the vertical angle to the horizontal angle (aspect ratio) can be approximated to 1, and the far-field image can be approximated to a circle. it can.

According to the above-mentioned means (2), since the thickness of the (a) cladding layer can be made thin, the stripe width can be made narrow. By narrowing the stripe width, the horizontal angle of the far-field image can be increased, the ratio of the vertical angle to the horizontal angle (aspect ratio) can be approximated to 1, and the far-field image can be approximated to a circle. it can.

(B) Since the far field image approximates to a circle, when used as a light source of a laser beam printer,
A beam shaping optical system for converting an elliptical beam into a circular beam is not required, so that the device can be downsized and the manufacturing cost can be reduced.

[0020]

BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. In all the drawings for explaining the embodiments of the invention, components having the same function are designated by the same reference numeral, and the repeated description thereof will be omitted.

(Embodiment 1) FIGS. 1 to 6 are diagrams relating to an optical integrated device according to an embodiment (Embodiment 1) of the present invention. FIG. 1 is a schematic perspective view of an optical integrated device, and FIG. 2 is a sectional view in each manufacturing step in manufacturing the optical integrated device.

The structure of the optical integrated device 1 of the first embodiment will be described together with the description of the manufacturing method thereof with reference to the process flow of FIG.

First, as shown in FIG. 2A, a first conductivity type compound semiconductor substrate, for example, an n-type GaAs substrate (n
-GaAs substrate) 11 is prepared. Therefore, in the first embodiment, the second conductivity type is p-type. The first conductivity type may be p-type.

Next, as shown in FIG. 2B, n-G
Metal-organic vapor phase epitaxy (MOCVD) on aAs substrate 11.
To produce a multilayer structure. That is, the n-GaAs
An n-AlGaInP clad layer (n-type clad layer) 12 (thickness: 1.2 μm, carrier concentration: 5E17) is formed on the substrate 11.
cm ⁻³ ), an undoped GaInP active layer 13 (thickness: 20 nm) is stacked, and a p-AlGaInP clad layer (p-type clad layer) 14 (thickness 0.1 μm) having the same composition as the n-type clad layer is deposited. , Carrier concentration 5E17c
m ⁻³ ) and p-AlGaInP etching stop layer (etch stop layer) 15 (thickness 20 nm, carrier concentration 5E17 cm ⁻³ ), p-AlGaInP clad layer (p-type clad layer) 16 (thickness 0.2 μm). , Carrier concentration 5E17 cm ⁻³ ) and then n-Ga
As cap layer (n-GaAs) 17 (thickness 0.2 μm
m, carrier concentration 1E18 cm ⁻³ ).

Next, as shown in FIG. 2C, the insulating film 18 is laminated to a thickness of 0.2 μm, and the insulating film 18 is formed.
A stripe (resist stripe) 19 is formed on the upper surface of the photoresist. At this time, resist stripe 1
It is assumed that 9 sets of two stripes having a width of 1 μm and an interval of 200 μm are one set, and the stripes have an interval of 300 μm.
Then, the insulating film 18 is patterned by wet etching using the resist stripe 19 as a mask,
The insulating film 18 having a stripe shape is formed and the resist stripe 19 is removed (see FIG. 2D).

Next, as shown in FIG. 2E, n-GaAs 17 is etched into stripes with a phosphoric acid-based etching solution using the stripe-shaped insulating film 18 as an etching mask, and then p-AlGaIn is etched with a hydrochloric acid-based etching solution.
P16 is etched to form a mesa structure stripe (ridge stripes 20 and 21). Since the widths of the ridge stripes 20 and 21 are wet-etched, the dimensions thereof vary. For example, the width of the stripe 20 is 0.9.
The width of the stripe 21 is 8 μm and the width of the stripe 21 is 1.05 μm.

Next, as shown in FIG. 2 (f), the MOC
N-AlInP layer (n-AlInP) 22 by VD method
(Thickness 0.3 μm, carrier concentration 5E17 cm ⁻³ ) is selectively grown.

Next, after the insulating film 18 is removed by wet etching, as shown in FIG.
By the D method, the p-AlGaInP layer (p-AlGaInP
P) 23 (thickness 1.2 μm, carrier concentration 1E18 cm
^-3 ), p-GaAs contact layer (p-GaAs) 2
4 (thickness 3 μm, carrier concentration 2E18 cm ⁻³ ) are stacked. n-AlInP22 and p-AlGaInP23
Since the size of the band gap of is larger than the energy of laser light emitted from the active layer, it does not absorb laser light, that is, by using these layers,
The luminous efficiency can be improved as compared with the conventional GaAs buried layer.

Next, as shown in FIG. 2H, in the set of two stripes, the two stripes 20 and 2 are
The device isolation groove 25 is formed between the two. The depth of this groove is n
-The depth reaches the GaAs substrate 11. As a result, the individual stripes are separated, so that the laser (semiconductor laser) can be driven independently when the current is injected.

Next, p-type GaAs is selectively p-typed on p-GaAs 24.
The side electrode 26 is formed and the n-GaAs substrate 11 is formed.
After the back surface of the n-GaAs substrate 1 is formed to a predetermined thickness, the n-GaAs substrate 1
An n-side electrode 27 is selectively formed on the back surface of No. 1 (see FIG. 1). Further, the n-GaAs substrate 11 is formed into stripes 20 and 2.
Cleave at a predetermined interval in the direction orthogonal to 1 to form a strip. The ends of the stripe 20 and the stripe 21 are exposed on the cleavage plane, and the laser light is emitted from this portion. The cleavage is performed, for example, every 600 μm.

Next, although not shown, thin films are formed on the cleavage planes on both sides of the strip. For example, a SiO ₂ single layer film (reflectance 3
0%) is coated on the rear facet which is the rear emission surface of the semiconductor laser with a SiN / SiO ₂ multilayer film (reflectance 90%).

Next, as shown in FIG. 2 (i), the strip is divided into sets of two stripes. For example,
Divide at intervals of 500 μm. As a result, the optical integrated device 1 having the two-beam laser structure as shown in FIGS. 2 (i) and 1 is manufactured. In the optical integrated device 1 shown in FIG. 1, the stripe 20 portion and the stripe 21 each constitute a semiconductor laser, and each emits a laser beam.
The dimensions of the optical integrated device 1 are, for example, about 600 μm in length in the optical waveguide direction, about 500 μm in width, and 100 in thickness.
It becomes about μm.

2 in the optical integrated device 1 of the first embodiment
The current-voltage characteristics of the beam laser are shown in FIG. The laser light emitted from the stripe 20 had a threshold value of 33 mA and an efficiency of 0.62 W / A, and the laser light emitted from the stripe 21 had a threshold value of 38 mA and an efficiency of 0.58 W / A, which were almost the same characteristics.

FIG. 4 shows a far field image. The laser light emitted from the stripe 20 has a horizontal far-field image angle of 18.6 degrees and a vertical far-field image angle of 19.2 degrees, and has an aspect ratio (vertical direction angle and horizontal direction angle). Ratio) is 1.03. With the laser light emitted from the stripe 21, the horizontal far-field image angle is 18.1 degrees, the vertical far-field image angle is 20.1 degrees, and the aspect ratio is 1.11. It was almost the same as that of.

In this way, a two-beam laser device whose aspect ratio is close to 1, that is, the shape of laser light is close to a perfect circle can be manufactured.

The optical integrated device 1 is not particularly shown,
Two laser beams are emitted from a transparent window incorporated in a predetermined package and formed in a part of the package. Such an optical integrated device is used by incorporating it into a desired device.

FIG. 5 is a block diagram showing a device configuration of a laser beam printer in which the optical integrated device of the first embodiment is incorporated, and FIG. 6 shows a semiconductor laser and a shape correction optical system which constitute the laser beam printer. It is a block diagram. The optical integrated device 1 of the first embodiment is used as a light source of a laser beam printer.

As shown in FIG. 5, two laser beams (two-beam laser) 101 emitted from the optical integrated device 1 are
After the beam shape is corrected by the shape correction optical system 110, the beam is reflected by the rotary polygon mirror 120, condensed on the photosensitive drum 122 by the Fθ lens 121, and horizontally scanned in the form of a minute spot 123.

On the outer periphery of the photosensitive drum 122, the charging device 124 and the developing device 12 are arranged along the rotation direction of the photosensitive drum 122.
5, a transfer device 126, a static eliminator 127, and a cleaning device 128 are arranged. By rotating the photosensitive drum 122, the charger 1
The photoconductive film on the surface of the photosensitive drum 122 reaching the portion corresponding to 24 is uniformly charged by the charger 124.

On such a photosensitive drum 122, a minute spot 123 is irradiated on a predetermined photosensitive drum surface by the ON / OFF operation of the optical integrated device 1. As a result of the conductivity of the photoconductive film in the portion irradiated with the minute spots 123 being increased and the charge being lost, an electrostatic latent image is formed on the surface of the photosensitive drum 122.

In the developing section in which the developing device 125 is arranged, carbon particles (toner) charged in advance by the developing device 125 adhere to the electrostatic latent image. Then, in the transfer portion where the transfer device 126 is arranged, the toner is attracted to the paper 129 passing between the transfer device 126 and the photosensitive drum 122 by the voltage of the transfer device 126. The sheet 129 is moved by a roller (not shown). The moving paper 129 is preheated by a preheating unit in which the preheater 130 is arranged, and then heated and pressed by the fixing unit 131 by the pair of rollers 131a and 131b so that the toner is transferred to the paper 12.
It is fixed at 9 and printing is performed.

The charge removing unit provided with the charge remover 127, which is located outside the transfer unit, removes charge from the photosensitive drum 122, and the cleaning unit provided with the cleaner 128 removes the toner remaining on the surface of the photosensitive drum 122. Photosensitive drum 1 removed
22 is cleaned.

Since the optical integrated device 1 according to the first embodiment is used, the shape correction optical system 110 is replaced with the conventional shape correction optical system 110 shown in FIG. 18 and the shape shown in FIG. Correction optics 110 can be employed.

A conventional shape correction optical system 110 shown in FIG.
Is composed of a collimating lens 111 formed of a combination of a plurality of lenses and a beam shaping optical system 112 formed of a combination of a plurality of prisms. The laser beam 109 emitted from the semiconductor laser 108 is converted into parallel rays by the collimator lens 111, converted from an elliptical beam into a circular beam by the beam shaping optical system 112, and projected onto the rotating polygon mirror 120. Then, laser light 10
9 is narrowed down by the Fθ lens 121, and the photosensitive drum 12
The surface of No. 2 is irradiated with a minute spot 123.

On the other hand, according to the first embodiment, each semiconductor laser of the two-beam laser of the optical integrated device 1 is a circular beam in which the aspect ratios of the far-field images are both close to 1. As shown in FIG. 6, the shape correction optical system 110
Is a collimator lens 111, and the beam shaping optical system is not necessary. That is, the laser light 105 emitted from the two semiconductor lasers of the optical integrated device 1 is generated by the collimator lens 1
It is collimated by 11 and projected onto the rotary polygon mirror 120.

The laser beam printer (optoelectronic device) incorporating the optical integrated device 1 of the first embodiment does not require a beam shaping optical system for shaping the beam into a circular shape in the shape correction optical system 110. The overall price can be reduced.

The laser beam printer according to the first embodiment can also reduce power consumption. That is, when the cross section of the laser beam is elliptical as in the conventional case, since the lens shape is circular, only the light in the central portion of the laser light can be used, and the peripheral portion cannot be used. It was low. Therefore, it is required that the output of the laser beam is high. On the other hand, if a semiconductor laser whose beam shape is originally circular as in the first embodiment is used, the light utilization efficiency is improved, and it is possible to use even a low light output.
As a result, a reduction in operating current leads to a reduction in power consumption.

The first embodiment has the following effects. (1) In particular, since the thickness of the clad layer (p-type clad layer 16) can be reduced, the stripe width can be reduced. By narrowing the stripe width, the horizontal angle of the far-field image can be increased, the ratio of the vertical angle to the horizontal angle (aspect ratio) can be approximated to 1, and the far-field image can be approximated to a circle. it can.

(2) Since the far field image approximates to a circle, when used as a light source of a laser beam printer,
A beam shaping optical system for converting an elliptical beam into a circular beam is not required, so that the laser beam printer can be downsized and the manufacturing cost of the laser beam printer can be reduced.

(3) In the first embodiment, since the optical integrated device 1 is a two-beam laser, when it is used as a light source of a laser beam printer, the printing width for one scanning becomes wide and the printing capacity is increased. Therefore, the printing speed per page becomes faster.

(4) The optical integrated device 1 is a two-beam laser, but since the two semiconductor lasers in the optical integrated device 1 are electrically separated by the device isolation groove 25, they are independent of each other. It can be driven. Therefore, the current injected into one semiconductor laser can be prevented from flowing into the other semiconductor laser, so that the leak current can be reduced and the efficiency can be improved.

Although the optical integrated device 1 is the two-beam laser in the first embodiment, it may be an optical integrated device having a single semiconductor laser. In this case, since the aspect ratio of the far-field image of the laser light is close to 1, and the laser beam becomes a circular beam, it is possible to increase the information storage amount of one disk in a DVD or the like.

(Embodiment 2) FIGS. 7 to 10 are diagrams relating to an optical integrated device according to another embodiment (Embodiment 2) of the present invention. FIG. 7 is a schematic perspective view of the optical integrated device, and FIG.
(A)-(d) is sectional drawing in each manufacturing process in manufacture of an optical integrated element.

In the manufacture of the optical integrated device of Embodiment 2, as shown in FIG. 8A, first, the n-GaAs substrate 31 having the inclined surface 32 and the inclined surface 33 is prepared. n
-The GaAs substrate 31 is [111] A from the (001) plane.
A substrate having a surface inclined by 7 ° in the direction (hereinafter referred to as a 7 ° OFF surface) is used.

A stripe-shaped photoresist mask extending in the [01-1] direction is formed on this substrate, and wet etching is performed with a hydrofluoric acid-based etching solution to form an inclined surface. This inclined surface has different inclination angles on both sides of the photoresist mask. The slope on one side is (4
The crystal planes such as 11) A plane and (311) A plane are exposed, but the crystal planes are not exposed on the other plane.

The width of the photoresist mask is adjusted so that a slope having no crystal plane is formed in the middle of the slope having a crystal plane (between the slopes 32 and 33). The distance between the slopes where the crystal planes are exposed can be freely set to a length of 100 μm or more. In the second embodiment, since the (411) A plane is used as the inclined crystal plane, 7 ° OF of the surface is used.
It is inclined 12.5 ° with respect to the F-plane, and the width of the slope is 1.5 μm. The width of the slope can be controlled by adjusting the wet etching time when forming the slope. Further, the distance between the (411) A surfaces adjacent to each other (the distance between the inclined surface 32 and the inclined surface 33 in FIG. 7) is 400 μm.

N-G with inclined surface produced by the above method
As shown in FIG. 8B, a multilayer structure is formed on the aAs substrate 31 by MOCVD. First, n-AlGaI
nP clad layer (n-type clad layer) 34 (thickness 1.2 μm
m, carrier concentration 5E17 cm ⁻³ ),
An undoped GaInP active layer 35 (thickness: 24 nm) is stacked, and p-AlGaI having the same composition as the n-type cladding layer 34 is formed.
nP clad layer (p-type clad layer) 3636 (thickness 1.
2 μm, carrier concentration 5E17 cm ⁻³ ) and then p-
GaAs contact layer (p-type contact layer) 37 (thickness 1.
5 μm, carrier concentration 2E18 cm ⁻³ ) are laminated.

Next, as shown in FIG. 8C, the element isolation groove 38 is formed by wet etching using a Br type etching solution. The element isolation groove 38 is formed so as to remove the inclined surface where the crystal plane does not appear, and the depth thereof is n−.
It reaches the GaAs substrate 31.

Next, as shown in FIG. 8D, after the p-side electrode 39 is selectively formed, the back surface of the n-GaAs substrate 31 is removed by a predetermined thickness, and the back surface of the n-GaAs substrate 31 is further removed. Then, the n-side electrode 40 is selectively formed.

Next, similarly to the first embodiment, cleavage is sequentially performed in the direction orthogonal to the optical waveguide to form a strip. After that, a SiO ₂ film single layer film (reflectance of 3 is formed on the front end face portion (the surface that becomes the front emission surface of the semiconductor laser), which is one surface of this strip.
0%), and a coating of a SiN / SiO ₂ multilayer film (reflectance 90%) is applied to the rear end face portion, and further divided into layers.
The optical integrated device 1 as shown in (d) and FIG. 7 is manufactured.

The optical integrated device 1 according to the second embodiment has a width of 700 μm and a cavity length of 400 μm. The element isolation groove 38 and the patterned electrode prevent the injected current from flowing to an unnecessary portion and causing a loss. In this way, an element having two laser beams can be manufactured.

FIG. 9 shows current-light output characteristics of laser light emitted from the inclined surfaces 32 and 33. The laser light emitted from the inclined surface 32 has a threshold value of 30 mA and an efficiency of 0.62 W.
/ A, the laser light emitted from the inclined surface 33 has a threshold value of 32.
The efficiency was 0.58 W / A and the characteristics were almost the same.

FIG. 11 shows a far field image. In the laser light emitted from the inclined surface 32, the horizontal far-field image angle is 1
The vertical far-field image angle is 23.6 degrees at 8.6 degrees, and the aspect ratio is 1.27. With the laser light emitted from the inclined surface 33, the horizontal far-field image angle is 1
At 7.9 degrees, the vertical far-field image angle was 22.4 degrees, and the aspect ratio was 1.25, which was almost the same as that from the inclined surface 32. In this way, a two-beam laser device having an aspect ratio close to 1, that is, a laser beam shape close to a perfect circle can be manufactured. With this device, 60 ℃
Has confirmed the optical output up to 15mW. Also, 60 ℃
It has been confirmed that a circular beam shape can be obtained even when measured in.

In the second embodiment, in order to approximate the aspect ratio to 1, the laser light is emitted from the end surface of the inclined surface. That is, in order to bring the aspect ratio close to 1, the stripe width (width of the inclined surface 32 and the inclined surface 33)
Is required to be narrowed, and in the second embodiment, a method of forming an inclined surface on the substrate is adopted as a method of realizing it.

According to the second embodiment, the aspect ratio of the laser light emitted from the end surface of the inclined surface 32 is 1.27, and the aspect ratio of the laser light emitted from the end surface of the inclined surface 33 is 1.25. , And both have substantially the same aspect ratio, and both become substantially circular beams. Therefore, if it is used as a light source of a laser beam printer, the beam shaping optical system of the laser beam printer is not required as in the first embodiment, and the device can be downsized and the device cost can be reduced.

(Embodiment 3) FIGS. 11 and 12 are views relating to an optical integrated device according to another embodiment (Embodiment 3) of the present invention, and FIG. 11 is a schematic perspective view of the optical integrated device. ,
FIG. 12 is a graph showing a far-field image of a two-beam laser in an optical integrated device.

The optical integrated device 1 of the third embodiment is substantially the same as that of the second embodiment, but when the inclined surface to be the active layer is formed on the n-GaAs substrate 51, the width of the inclined surface is different. Create an inclined surface. The manufacture of the optical integrated device 1 of the third embodiment is substantially the same as that of the second embodiment, and only the dimensions and the like are different at each place. Therefore, the description will be made without using the drawings.

First, a photoresist mask having a width of 200 μm is formed at intervals of 400 μm, and the inclined surface 52 is formed by etching with a hydrofluoric acid-based etching solution. After removing the photoresist mask, 400 times again at 200 μm intervals.
A photoresist mask having a width of μm is formed. Then, the inclined surface 53 is formed with a hydrofluoric acid-based etching solution, and at this time, the etching time is set to a time different from the time when the inclined surface 52 is formed. Thereby, the inclined surface 52 and the inclined surface 5
The width of 3 can be changed.

In the third embodiment, the width of the inclined surface 52 is 0.
The width of the inclined surface 53 is 8 μm and 5 μm. After removing the photoresist mask, a multi-layer structure is produced by MOCVD.

First, the n-AlGaInP clad layer (n
Type clad layer) 54 (thickness 1.2 μm, carrier concentration 5)
E17 cm ⁻³ ) and then undoped GaIn
A P-active layer 55 (thickness: 20 nm) is laminated, and a p-AlGaInP clad layer (p having the same composition as the n-type clad layer 54 is formed).
Type clad layer) 56 (thickness 1.2 μm, carrier concentration 5)
E17 cm ⁻³ ) and a p-GaAs contact layer (p-type contact layer) 57 (thickness 1.5 μm, carrier concentration 2E18 cm ⁻³ ) are stacked.

Next, as in the second embodiment, the element isolation groove 5 is formed.
8 is formed by wet etching using a Br-based etching solution. The element isolation groove 58 is formed so as to remove the inclined surface where the crystal plane does not appear, and its depth is n-GaA.
The substrate 51 is reached. After that, as in the second embodiment, p
The side electrode 59 and the n-side electrode 60 are formed and cleaved to manufacture a strip. Further, after coating both end surfaces of the strip body to form a film, the strip body is divided into chips to manufacture the optical integrated device 1.

The optical integrated device 1 according to the third embodiment has a width 70.
The size is 0 μm and the resonator length is 700 μm.

FIG. 12 shows a far-field pattern of laser light of the optical integrated device 1. In semiconductor lasers, it is known that the angle of the far-field image changes depending on the width of the active layer (stripe width). Generally, the narrower the width, the larger the horizontal far-field image angle. The horizontal far-field image angle of the laser light emitted from the inclined surface 52 is 20.1 degrees, whereas the horizontal far-field image angle of the laser light emitted from the inclined surface 53 is 7.8. And the angle corresponding to the stripe width is obtained. On the contrary, the vertical far-field image angle is determined by the thickness of the active layer. In this device, the angle of the inclined surface is constant and only the width is changed, so that the thickness of the active layer is the same between the inclined surface 52 and the inclined surface 53. Therefore, as shown in FIG. 12, the far-field image angle in the vertical direction is 24.3 regardless of the laser light emitted from either of the inclined surfaces.
It has become a degree. If converted to the aspect ratio, the inclined surface 5
The laser light emitted from No. 2 has an aspect ratio of 1.21, and the laser light emitted from the inclined surface 53 has an aspect ratio of 3.12. That is, this element is an element that can emit laser beams having different aspect ratios.

The optical integrated device 1 incorporating such a laser having an aspect ratio close to 1 and a large laser having an aspect ratio of 3.1 can be used for a rotary laser device used in the field of measuring instruments. The rotary laser device reflects the emitted laser light on a rotating mirror and irradiates the wall surface with the laser light to display a position at a predetermined height.
As shown in FIG. 9, the rotary laser device 1 mounted on the tripod 151
Laser light 152 from 50, for example, the wall surface 153 of the room
The height H from the floor surface 154 is displayed by illuminating.

In this case, there are display forms such as displaying with spot light and displaying with a band 156 of light having a constant width W on the wall surface 153.

When the light is displayed on the wall surface 153 as a band of light 156 having a constant width W, conventionally, as shown in FIG. 156 is displayed on the wall surface 153. That is, the laser light is reflected by a mirror that rotates and oscillates to irradiate the wall surface 153 with the laser light 152 so that a constant height is obtained.

On the other hand, as in the third embodiment, a semiconductor laser that emits a circular beam having a far-field pattern of laser light whose aspect ratio is close to 1 and a far-field pattern of laser light having an aspect ratio of 3. 1 and a semiconductor laser that emits a large flat beam.
If it is incorporated into 0, as shown in FIG. 15, it is possible to irradiate the wall surface 153 with the spot light 158 or display the light band 156 on the wall surface 153 by switching the semiconductor laser to be operated. That is, the spot light 158 is moved to the wall surface 15 by operating a semiconductor laser having an aspect ratio close to 1.
3 can be displayed on the wall surface 156 by operating a semiconductor laser having a large aspect ratio of 3.1.
3 can be displayed.

Therefore, according to the present embodiment, in the rotary laser device 150, the swinging operation of the light projecting portion 157, which is conventionally required to display the band 156 of light of a constant width, is unnecessary, and the running cost is reduced. To be done.

(Embodiment 4) FIGS. 13 to 15 are diagrams relating to an optical integrated device according to another embodiment (Embodiment 4) of the present invention. FIG. 13 is a schematic perspective view of an optical integrated device,
FIG. 14 is a graph showing a far-field image of a two-beam laser, FIG.
FIG. 5 is a schematic view showing a usage pattern of a rotating laser incorporating the optical integrated device of the fourth embodiment. A method of manufacturing the optical integrated device 1 according to the fourth embodiment will be described with reference to the drawing of FIG. 13 without using the manufacturing process drawing.

A photoresist mask is formed on the main surface of the n-GaAs substrate 61 to form an inclined surface to be an active layer on the n-GaAs substrate 61, and the inclined surface 62 is formed by etching with a hydrofluoric acid-based etching solution. . The width of the inclined surface 62 is 1.1 μm.

Next, after removing the photoresist mask, a multi-layer structure is formed by MOCVD in the same manner as in the second embodiment. First, after growing an n-AlGaInP clad layer (n-type clad layer) 63 (thickness 1.2 μm, carrier concentration 5E17 cm ⁻³ ), undoped Ga
An InP active layer 64 (thickness: 20 nm) is laminated, a p-AlGaInP clad layer (p-type clad layer) 65 having the same composition as the n-type clad layer 63, a thickness of 0.2 μm, a carrier concentration of 5E17 cm ⁻³ ), Zn, Se. Co-doping current constriction clad layer (co-doping layer) 66 (thickness 0.5 μm,
Inclined surface carrier concentration p type 5E17cm ^-3 , 7 ° OFF
A surface carrier concentration of n-type 5E17 cm ⁻³ ) is stacked, and p-AlGaIn having the same composition as that of the n-type cladding layer 63 is again formed.
P clad layer (p-type clad layer) 67 (thickness 0.5 μ
m, carrier concentration 1E18 cm ⁻³ ), and finally a p-GaAs contact layer (p-type contact layer) 68.
(Thickness: 1.5 μm, carrier concentration: 2E18 cm ⁻³ ) 6
8 is laminated.

Next, a SiO ₂ insulating film is formed to a thickness of 0.2 μm to form a resist stripe having a width of 250 μm with the inclined surface 62 as the center. The distance between these stripes is 2
It is 50 μm. Then, after etching the insulating film with a hydrofluoric acid-based etching solution, the unmasked portion is removed with a sulfuric acid-based etching solution and a hydrochloric acid-based etching solution.

Then, again by MOCVD, n-A
lGaInP clad layer (n-AlGaInP layer) 69
(Thickness 1.2 μm, carrier concentration 5E17 cm^-3),
Undoped GaInP active layer (GaInP layer) 70 (thickness
Of the same composition as the n-type clad layer.
-AlGaInP clad layer (p-AlGaInP layer)
71 (0.2 μm thickness, carrier concentration 5E17c
m^-3), And an n-GaAs cap layer (thickness: 0.
2 μm, carrier concentration 2E18 cm^-3) Stack
(Not shown because it will be removed later). Selective growth on insulating film
Therefore, the AlGaInP layer and the like do not grow. Hydrofluoric acid
After removing the insulating film with the etching solution, the thickness is again 200n
An insulating film of m is prepared. And, the inclined surface 62 is centered
250 μm wide resist stripe and inclined surface 6
2 μm wide resist strip at a distance of 2 to 250 nm
The lip mask is made parallel to the inclined surface 62. Phosphoric acid
Etching the n-GaAs cap layer with etching solution
After that, a ridge stripe 73 is formed with a hydrochloric acid-based etching solution.
To do. After that, the n-AlInP block is formed by MOCVD.
Layer (n-AlInP layer) 74 (thickness 0.3 μm, key
Carrier concentration 5E17cm^-3) Selectively grow. Insulation film
After removing the n-GaAs layer by wet etching,
P-AlGaInP clad by MOCVD again
Layer (p-AlGaInP layer) 75 (thickness 1.2 μm, key
Carrier concentration 1E18cm^-3), P-GaAs contact
Layer (p-GaAs layer) 76 (thickness 3 μm, carrier concentration)
2E18cm ^-3) Are stacked.

N-AlInP layer 74 and p-AlGaIn
Since the size of the forbidden band width of the P layer 75 is larger than the energy of the laser light emitted from the active layer, it does not absorb the laser light, that is, by using these layers, the conventional GaAs burying is not performed. Luminous efficiency can be increased as compared with the case of using a layer.

Next, the inclined surface 62 and the ridge stripe 7
An element isolation groove 77 is formed between the three. This element isolation groove 7
The depth of 7 is the depth reaching the n-GaAs substrate 61. This will separate the individual stripes,
When injecting current, the laser can be driven independently. After selectively forming the p-side electrode 78 as in the above embodiment, n
The back surface of the -GaAs substrate 61 is removed to a predetermined thickness, and then the n-side electrode 79 is selectively formed on the back surface of the n-GaAs substrate 61.

Next, the n-GaAs substrate 61 is sequentially cleaved in the direction orthogonal to the optical waveguide to form a strip having a predetermined width. Then, a coating film is formed on both ends (cleavage surface) of this strip. After that, the width is 500 μm again by cleavage.
To make chips. The resonator length of the device manufactured this time is 600.
μm.

FIG. 14 shows a far-field image of laser light of the optical integrated device 1 of the fourth embodiment. The laser light emitted from the inclined surface 62 has a horizontal far-field image angle of 17.6 degrees and a vertical far-field image angle of 23.8 degrees. Further, the laser light emitted from the ridge stripe 73 has a horizontal far-field image angle of 7.2 degrees, and a vertical far-field image angle of the active layer (GaInP layer) 70 on the inclined surface. Since it is thicker than the active layer (GaInP active layer) 64, it is 32.4 degrees. If converted to aspect ratio,
The laser light emitted from the inclined surface 62 has an aspect ratio of 1.35, and the laser light emitted from the ridge stripe 73 has an aspect ratio of 4.5. That is, with this element, a two-beam laser element having a large aspect ratio was realized.

The optical integrated device of the fourth embodiment can be used in the rotary laser device described in the third embodiment.

(Embodiment 5) FIG. 16 is a schematic perspective view of an optical integrated device according to another embodiment (Embodiment 5) of the present invention, and FIG. 17 is a graph showing a far-field pattern of a two-beam laser. .

The structure of the optical integrated device 1 of the fifth embodiment will be described by explaining the manufacturing method thereof. Since the manufacturing method is similar to that of the above embodiment, the process cross-sectional views are omitted.

In manufacturing the optical integrated device 1 of the first embodiment, the n-GaAs substrate 81 is first prepared. Next, a photoresist mask is formed on the n-GaAs substrate 81 to form an inclined surface to be an active layer, and the inclined surface 82 is formed by etching with a hydrofluoric acid-based etching solution. The width of the inclined surface 82 is 1.1 μm.

Next, after removing the photoresist mask, a multi-layer structure is produced by MOCVD. First,
n-AlGaInP clad layer (n-type clad layer) 83
(Thickness 1.2 μm, carrier concentration 5E17 cm ⁻³ ) is grown, and then an undoped GaInP active layer 84 (thickness 20 nm, strain 0.5%) is laminated, and the n-type cladding layer 8 is formed.
No. 3 p-AlGaInP clad layer (p-type clad layer) 85 (thickness 0.3 μm, carrier concentration 5E1)
7cm ^-3), Zn, Se simultaneous doping current confinement cladding layer (co-doped layer) 86 (thickness 0.6 .mu.m, inclined surface carrier concentration p-type 5E17cm ^-3, 7 ° OFF surface carrier concentration n-type 5E17 cm ^-3) Then, a p-AlGaInP clad layer (p-type clad layer) 87 (thickness 0.5 μm, carrier concentration 1.2E18 cm ⁻³ ) having the same composition as that of the n-type clad layer 83 is laminated again, and finally p-Ga
As contact layer (p-type contact layer) 88 (thickness 1.
5 μm, carrier concentration 2E18 cm ⁻³ ) are laminated.

Next, a SiO ₂ insulating film is formed to a thickness of 0.2 μm to form a resist stripe having a width of 250 μm with the inclined surface 82 as the center. The distance between these stripes is 2
It is 50 μm. Then, after etching the insulating film with a hydrofluoric acid etching solution, a portion not masked with a sulfuric acid-based etching solution and a hydrochloric acid-based etching solution is removed. By this etching, the GaAs surface which is the substrate is exposed.

Next, after removing the resist stripe and the insulating film, a resist stripe is formed again with a width of 500 μm centering on the inclined surface 82. Then, the inclined surface 89 is formed by etching with a hydrofluoric acid-based etching solution. The width of the inclined surface 89 is 1.1 μm. After removing the photoresist mask, an insulating film is formed and a resist stripe similar to the above is formed again. Then, after the insulating film is patterned into a stripe shape with a hydrofluoric acid-based etching solution, the resist stripe is removed.

Next, a multi-layer structure is produced by MOCVD. First, an n-AlGaInP clad layer (n-type clad layer) 90 (thickness: 1.2 μm, carrier concentration: 5E)
17 cm ⁻³ ) and then undoped GaInP
An active layer 91 (thickness 20 nm, strain 0.8%) is laminated,
n-type cladding layer and the p-AlGaInP cladding layer having the same composition (p-type cladding layer) 92 (thickness 0.2 [mu] m, carrier concentration 5E17cm ^{- 3),} Zn, Se simultaneous doping current confinement cladding layer (co-doped layer) 93 ( Thickness 0.5
μm, inclined plane carrier concentration p-type 5E17 cm ⁻³ , 7
OFF OFF carrier concentration n-type 5E17 cm ⁻³ ) is laminated, and p-AlGaIn having the same composition as the n-type clad layer is laminated again.
P clad layer (p-type clad layer) 94 (thickness 0.5 μ
m, carrier concentration 1.2E18 cm ⁻³ ), and finally p-GaAs contact layer (p-type contact layer) 9
5 (thickness: 1.5 μm, carrier concentration: 2E18 cm ⁻³ )
Are stacked.

Next, an element isolation groove 96 is formed between the inclined surface 82 and the inclined surface 89. The depth of this groove is n-GaA.
The depth to reach the s substrate 81. This separates the individual stripes so that the laser can be driven independently when injecting current. After that, the p-side electrode 97 and the n-side electrode 98 are formed as in the above embodiment. Also, n-G
The aAs substrate 81 is cleaved in a direction orthogonal to the optical waveguide at predetermined intervals to form a strip. The resonator surface, which is the cleavage surface of this strip, is coated and again cleaved to form a chip having a width of 500 μm. The resonator length of the optical integrated device 1 manufactured this time is 600 μm.

A far-field pattern of this device is shown in FIG. The laser light emitted from the inclined surface 82 has a horizontal far-field image angle of 17.6 degrees and a vertical far-field image angle of 23.
It is 8 degrees. Further, the laser beam emitted from the inclined surface 89 has a horizontal far-field image angle of 17.4 degrees and a vertical far-field image angle of 23.2 degrees. In terms of aspect ratio, the laser light emitted from the inclined surface 82 has an aspect ratio of 1.35, and the laser light emitted from the inclined surface 89 has an aspect ratio of 1.33. The wavelength of the laser light emitted from the inclined surface 82 is 658.3 nm.
On the other hand, the wavelength of the laser light emitted from the inclined surface 89 is 678.3 nm. Therefore, a two-beam laser having an aspect ratio close to 1 and different wavelengths could be manufactured. This two-beam laser can be used for optical disc applications.

That is, in a DVD, a semiconductor laser of 650 nm band is used as a light source. In this case, the optical integrated device 1 of the fourth embodiment has a laser beam of 658.3 nm in wavelength and a laser beam of 678.3 nm in wavelength. Since the light can be switched and emitted, it can be used for both CD and DVD, and since both laser lights have a circular shape, an optical system for correcting the shape of the laser light is unnecessary.

Although the invention made by the present inventor has been specifically described based on the embodiments, the present invention is not limited to the above embodiments, and various modifications can be made without departing from the scope of the invention. Needless to say.

[0100]

The effects obtained by the typical ones of the inventions disclosed in the present application will be briefly described as follows.

(1) An optical integrated device having one or a plurality of semiconductor lasers capable of approximating the aspect ratio of a far-field image of laser light to 1, and a laser beam printer or the like incorporating the optical integrated device. An optoelectronic device can be provided.

(2) An optical integrated device capable of monolithically integrating one or a plurality of semiconductor lasers capable of approximating the aspect ratio of the far-field pattern of laser light to one on the same semiconductor chip and controlling each semiconductor laser individually. , And an optoelectronic device such as a laser beam printer incorporating the optical integrated element thereof.

(3) A semiconductor laser having a far-field pattern having an aspect ratio close to 1 and a semiconductor laser having an aspect ratio of 2 or more are monolithically integrated on the same semiconductor chip, and each semiconductor laser can be controlled individually. It is possible to provide an optical integrated device and an optoelectronic device such as a rotary laser device incorporating the optical integrated device.

(4) The aspect ratio of the far-field pattern of laser light can be approximated to 1, and one or a plurality of semiconductor lasers having different oscillation wavelengths are monolithically integrated on the same semiconductor chip, and each semiconductor laser is individually It is possible to provide a controllable optical integrated device and an optoelectronic device such as a DVD device incorporating the optical integrated device.

[Brief description of drawings]

FIG. 1 is a schematic perspective view of an optical integrated device according to an embodiment (Embodiment 1) of the present invention.

FIG. 2 is a cross-sectional view in each manufacturing process in manufacturing the optical integrated device of the first embodiment.

FIG. 3 is a graph showing current-light output characteristics of a two-beam laser in the optical integrated device of the first embodiment.

FIG. 4 is a graph showing a far-field image of a two-beam laser in the optical integrated device of the first embodiment.

FIG. 5 is a configuration diagram showing a device configuration of a laser beam printer in which the optical integrated device of the first embodiment is incorporated.

FIG. 6 is a configuration diagram showing a semiconductor laser and a shape correction optical system which constitute the laser beam printer.

FIG. 7 is a schematic perspective view of an optical integrated device according to another embodiment (Embodiment 2) of the present invention.

FIG. 8 is a cross-sectional view in each manufacturing process in manufacturing the optical integrated device of the second embodiment.

FIG. 9 is a graph showing current-light output characteristics of a two-beam laser in the optical integrated device of the second embodiment.

FIG. 10 is a graph showing a far-field image of a two-beam laser in the optical integrated device of the second embodiment.

FIG. 11 is a schematic perspective view of an optical integrated device according to another embodiment (Embodiment 3) of the present invention.

FIG. 12 is a graph showing a far-field image of a two-beam laser in the optical integrated device of the third embodiment.

FIG. 13 is a schematic perspective view of an optical integrated device according to another embodiment (Embodiment 4) of the present invention.

FIG. 14 is a graph showing a far-field image of a two-beam laser in the optical integrated device of the fourth embodiment.

FIG. 15 is a schematic diagram showing a usage pattern of a rotary laser incorporating the optical integrated device of the fourth embodiment.

FIG. 16 is a schematic perspective view of an optical integrated device according to another embodiment (Embodiment 5) of the present invention.

FIG. 17 is a graph showing a far-field pattern of a two-beam laser in the optical integrated device of the fifth embodiment.

FIG. 18 is a configuration diagram showing a conventional semiconductor laser and a conventional shape correction optical system that constitute a laser beam printer.

FIG. 19 is a schematic diagram showing a usage pattern of a conventional rotary laser.

[Explanation of symbols]

1 ... Optical integrated device, 11 ... N-GaAs substrate, 12 ... N
-AlGaInP, 13 ... Active layer, 14 ... p-AlGa
InP, 15 ... Etching stop layer, 16 ... p-Al
GaInP, 17 ... n-GaAs, 18 ... Insulating film, 19
... Resist stripes, 20, 21 ... Stripes, 22
... n-AlInP, 23 ... p-AlGaInP, 24 ...
p-GaAs, 25 ... Element isolation groove, 26 ... p-side electrode, 2
7 ... n side electrode, 31 ... n-GaAs substrate, 32, 33 ...
Inclined surface, 34 ... N-type clad layer, 35 ... Active layer, 36 ...
p-type clad layer, 37 ... p-type contact layer, 38 ... element isolation groove, 39 ... p-side electrode, 40 ... n-side electrode, 51 ... n-
GaAs substrate, 52, 53 ... Inclined surface, 54 ... N-type cladding layer, 55 ... Active layer, 56 ... P-type cladding layer, 57 ... P
-Type contact layer, 58 ... Element isolation groove, 59 ... P-side electrode,
60 ... n side electrode, 61 ... n-GaAs substrate, 62 ... inclined surface, 63 ... n type cladding layer, 64 ... GaInP active layer,
65 ... P-type cladding layer, 66 ... Simultaneous doping layer, 67 ... P
-Type clad layer, 68 ... P-type contact layer, 69 ... N-A
lGaInP layer, 70 ... GaInP layer, 71 ... p-Al
GaInP layer, 73 ... Ridge stripe, 74 ... nA
lInP layer, 75 ... p-AlGaInP layer, 76 ... p-
GaAs layer, 77 ... Element isolation groove, 78 ... P-side electrode, 79
... n-side electrode, 81 ... n-GaAs substrate, 82 ... inclined surface,
83 ... N-type clad layer, 84 ... GaInP active layer, 85
... p-type clad layer, 86 ... simultaneous doping layer, 87 ... p-type clad layer, 88 ... p-type contact layer, 89 ... inclined surface, 9
0 ... N-type cladding layer, 91 ... Active layer, 92 ... P-type cladding layer, 93 ... Simultaneous doping layer, 94 ... P-type cladding layer, 9
5 ... P-type contact layer, 96 ... Element separation groove, 97 ... P-side electrode, 98 ... N-side electrode, 101 ... Two laser beams (two-beam laser), 105 ... Laser beam, 108 ... Semiconductor laser, 109 ... Laser light, 110 ... Shape correction optical system, 11
1 ... Collimating lens, 112 ... Beam shaping optical system, 1
20 ... Rotating polygonal mirror, 121 ... F.theta. Lens, 122 ... Photosensitive drum, 123 ... Micro spot, 124 ... Charger, 12
5 ... developing device 125, 126 ... transfer device 127 ... static eliminator,
128 ... Cleaner, 129 ... Paper, 130 ... Pre-heater, 1
31 ... Fixing unit, 131a, 131b ... Roller, 150 ...
Rotating laser device, 151 ... Tripod stand 152 ... Laser light,
153 ... Wall surface, 154 ... Floor surface, 156 ... Light, 15
7 ... Projector, 158 ... Spot light.

Continued front page    F-term (reference) 5D119 AA04 AA11 AA22 AA41 BA01                       BB01 EB03 EC45 EC47 FA05                       FA08 FA17 HA66 NA04                 5F073 AA03 AA13 AA83 AA89 AB05                       BA07 CA14 EA20

Claims (5)

[Claims] 1. A stripe-shaped second conductivity having a compound semiconductor substrate, a first conductivity-type clad layer of the first conductivity type and an active layer, which are sequentially formed on the main surface of the compound semiconductor substrate. A second conductivity type clad layer of a mold, a first conductivity type semiconductor layer formed on both sides of the stripe-shaped second conductivity type clad layer over the active layer, the first conductivity type semiconductor layer, and A second conductive type semiconductor layer covering the stripe-shaped second conductive type clad layer having the convex portion, and a laser beam is emitted from an end face of the active layer corresponding to the second conductive type clad layer. An optical integrated device having a semiconductor laser, or a compound semiconductor substrate,
A first conductivity type clad layer of the first conductivity type, an active layer, and a second layer, which are sequentially formed on the main surface of the compound semiconductor substrate.
Formed from both sides of the conductive type clad layer, the striped second conductive type clad layer having a convex portion, and the striped second conductive type clad layer having the convex portion on the second conductive type clad layer 1. A first conductivity type semiconductor layer and a second conductivity type semiconductor layer covering the stripe-shaped second conductivity type clad layer having the first conductivity type semiconductor layer and the protrusion, and the protrusion is An optical integrated device having a semiconductor laser configured to emit a laser beam from an end face of the active layer corresponding to the second conductivity type clad layer, the aspect ratio of a far-field pattern of the laser beam being 1.5 or less. An optical integrated device characterized in that the width of the stripe-shaped second conductivity type clad layer having the convex portion is 3 μm or less so as to be smaller. 2. A compound semiconductor substrate, a first-conductivity-type cladding layer of the first conductivity type and an active layer, which are sequentially stacked on the main surface of the compound semiconductor substrate, and a predetermined distance above the active layer. A second conductivity type clad layer having a stripe-shaped second conductivity type having a plurality of convex portions formed, and a striped second conductivity type clad layer having a convex portion extending from both sides to the active layer. The first conductive type semiconductor layer to be formed, and the second conductive type semiconductor layer covering the stripe-shaped second conductive type clad layer having the first conductive type semiconductor layer and the convex portion, and the convex portion And a compound semiconductor substrate having semiconductor lasers each of which emits a laser beam from an end face of the active layer corresponding to each stripe-shaped second conductivity type clad layer, or a compound semiconductor substrate and the compound semiconductor substrate. A first conductivity type clad layer, an active layer, and a second conductivity type clad layer of the first conductivity type, which are sequentially stacked on the main surface, and a plurality of layers formed on the second conductivity type clad layer at a predetermined distance. A second conductivity type clad layer having a stripe-shaped second conductivity type having a convex portion and a second conductive type clad layer having a stripe shape and formed on both sides of the active layer. A second conductive type semiconductor layer having a first conductive type semiconductor layer and a second conductive type semiconductor layer covering the first conductive type semiconductor layer and the stripe-shaped second conductive type clad layer having the convex portion; An optical integrated device having a semiconductor laser configured to emit laser light from an end face of the active layer corresponding to a conductivity type cladding layer, wherein an aspect ratio of a far-field image of the laser light is smaller than 1.5. A strut having the convex portion Optical integrated device, wherein the width of the looped second conductivity type cladding layer is 3μm or less. 3. The compound semiconductor substrate has a first conductivity type Ga.
As substrate, the first conductivity type cladding layer is a first conductivity type AlGaInP layer, and the active layer is undoped G
The aInP layer, the stripe-shaped second conductivity type clad layer having the protrusions is a second conductivity type AlGaInP layer, and the wavelength of the laser beam is 0.68 μm. Optical integrated device. 4. A structure in which laser light emitted from an optical integrated device having a semiconductor laser is applied to a rotary polygon mirror via a shape correction optical system, and the reflected light is applied to a surface of a photosensitive drum as a minute spot through an Fθ lens. In the laser beam printer, the optical integrated device comprises a compound semiconductor substrate, a first conductivity type clad layer and an active layer which are sequentially formed on the main surface of the compound semiconductor substrate, and the active layer on the active layer. A stripe-shaped second conductivity-type cladding layer having a plurality of protrusions formed apart from each other by a predetermined distance;
A first conductive type semiconductor layer formed over both sides of the active layer from both sides of a striped second conductive type clad layer having the convex portion, and a stripe shape having the first conductive type semiconductor layer and the convex portion And a second conductive type semiconductor layer covering the second conductive type clad layer, the laser light is emitted from each end face of the active layer corresponding to each stripe-shaped second conductive type clad layer having the convex portion. An optical integrated device having a semiconductor laser having a configuration described above, or a compound semiconductor substrate,
A first conductivity type clad layer of the first conductivity type, an active layer, and a second layer, which are sequentially formed on the main surface of the compound semiconductor substrate.
A conductive-type clad layer, a second conductive-type clad layer of a stripe-shaped second conductive type having a plurality of convex portions formed at a predetermined distance on the second conductive-type clad layer, and the convex portion A first conductivity type semiconductor layer formed on both sides of the stripe-shaped second conductivity type clad layer over the active layer, and a stripe-shaped second conductivity type having the first conductivity type semiconductor layer and the convex portion. An optical integration having a semiconductor laser having a second conductivity type semiconductor layer covering a clad layer, and emitting a laser beam from an end face of the active layer corresponding to the second conductivity type clad layer having the convex portion. An element,
The stripe-shaped second second portion having the convex portion so that the aspect ratio of the far-field image of the laser light is smaller than 1.5.
A laser beam printer characterized in that the conductive clad layer has a width of 3 μm or less. 5. A rotary laser device for irradiating an object to be irradiated with laser light emitted from an optical integrated device having a semiconductor laser, wherein the optical integrated device comprises a compound semiconductor substrate, A stripe shape having a first-conductivity-type clad layer of the first conductivity type and an active layer, which are sequentially stacked on the main surface of a compound semiconductor substrate, and a plurality of protrusions formed on the active layer at a predetermined distance. A second conductivity type clad layer of the second conductivity type, and a first conductivity type semiconductor layer formed on both sides of the stripe-shaped second conductivity type clad layer having the protrusions on the active layer. A second conductive type semiconductor layer covering the first conductive type semiconductor layer and a striped second conductive type clad layer having the convex portions, and each striped second conductive type clad having the convex portions Said activity corresponding to the layer An optical integrated device having a semiconductor laser configured to emit a laser beam from each end face of the layer, or a compound semiconductor substrate, and a first conductivity type which is sequentially formed on the main surface of the compound semiconductor substrate. A second conductivity type of a stripe-shaped second conductivity type having a conductivity type clad layer, an active layer, a second conductivity type clad layer, and a plurality of protrusions formed on the second conductivity type clad layer at a predetermined distance. Type clad layer, a first conductive type semiconductor layer formed on both sides of the stripe-shaped second conductive type clad layer having the convex portion and over the active layer, the first conductive type semiconductor layer and the convex A second conductivity type semiconductor layer covering a striped second conductivity type clad layer having a portion, and emitting laser light from an end face of the active layer corresponding to the second conductivity type clad layer having the protrusion. Of the configuration In an optical integrated device having a conductor laser, the stripe-shaped second conductivity type cladding layer having the one convex portion is formed so that the aspect ratio of the far-field image of the laser light is smaller than 1.5. The width of the stripe-shaped second conductivity type clad layer having a portion is 3 μm or less, and the stripe-shaped second conductivity type clad layer having the other protrusion has an aspect ratio of a far-field image of laser light of 2 to 3 The thickness of the stripe-shaped second conductivity type clad layer having the convex portion is larger than 3 μm and the aspect ratio is smaller than 1.5. The rotary laser is configured such that a wide band of light is irradiated to the object to be irradiated when the laser light having the aspect ratio of 2 to 3 is irradiated with the spot light. Apparatus.