JP2003046026A - Semiconductor device and manufacturing method therefor - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide the manufacturing method of a semiconductor device which can follow up the demands for high-density mounting. SOLUTION: Passive parts, such as a capacitor part 24 and resistance parts 25 and a different semiconductor device SC3, are loaded on a semiconductor device SC2 by using the connection pads 22a of wiring patterns 22 formed in the semiconductor device SC2. By making the other circuit element connected to the semiconductor element of the semiconductor device SC2 and a compound circuit which is three-dimensionally constituted can easily be constituted, the semiconductor device which can follow the demands for high density mounting can be supplied.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device having rearranged wiring, a method of manufacturing the same, a semiconductor device having a circuit element mounted on a semiconductor substrate, and a method of manufacturing the same.

[0002]

2. Description of the Related Art An example of a method of manufacturing a semiconductor device having relocated wiring will be described below.

First, a photosensitive polyimide resin layer is formed on the entire surface of a silicon wafer having an original pad formed in the IC manufacturing process, the original pad portion is exposed by exposure and development, and then the polyimide resin layer is heated. Let it harden. Next, after removing the oxide film formed on the pad surface in the thin film forming apparatus, a two-layer film including a Cr layer and a Cu layer is formed on the entire surface of the wafer. Then 2
A plating resist film is formed on the entire surface of the layer film, the rearranged wiring portion is exposed by exposure and development processing, and after the plating resist is cured, Cu plating is performed on the exposed portion. Next, the plating resist film is peeled off, and the Cu layer and the Cr layer other than the Cu plated portion on the two-layer film are removed by etching. Next, a photosensitive polyimide resin layer is formed on the entire surface of the wafer, a part of the rearranged wiring is exposed by an exposure and development process, and then the polyimide resin layer is cured by heating. Next, a bump is formed on the exposed portion of the relocation wiring.

[0004]

In the above-mentioned conventional method,
An expensive thin film forming apparatus and an exposure / development apparatus are required to perform the rearrangement wiring, and indirect costs are increased due to the large number of processing steps. Therefore, it is difficult to reduce the manufacturing cost, and an inexpensive semiconductor device is provided. Extremely difficult to obtain.

Further, various electronic devices are not composed only of ICs, and many passive components are arranged and connected in the periphery of the ICs to form electric circuits and realize predetermined functions. In response to the demand for miniaturization of semiconductor devices, a method of incorporating a real size CSP or a plurality of ICs into one package has been proposed. However, in order to realize more advanced mounting, not only the IC portion must be miniaturized It is necessary to take measures including the passive components that make up the circuit.

The present invention has been made in view of the above circumstances. A first object of the present invention is to provide an inexpensive semiconductor device and a manufacturing method thereof. A second object is to provide a semiconductor device and a manufacturing method thereof that can follow the demand for high-density packaging.

[0007]

In order to achieve the first object, a semiconductor device according to the present invention has a semiconductor substrate having a semiconductor element connected to an original pad as described in claim 1. Further, in the semiconductor device provided with the rearrangement wiring, a part of which is exposed as a connection pad, the main feature is that the rearrangement wiring is made of a thick film formed by a thick film forming method. Further, according to the method of manufacturing a semiconductor device of the present invention, as described in claim 2, a semiconductor substrate provided with a semiconductor element is connected to an original pad, and a part thereof is exposed as a connection pad. The main feature of the method of manufacturing a semiconductor device in which layout wiring is provided is that the redistribution wiring is formed by a thick film forming method.

According to this semiconductor device and the method for manufacturing the semiconductor device, by using the thick film forming method for forming the rearrangement wiring, an expensive thin film forming apparatus or the like for performing the rearrangement wiring becomes unnecessary and the processing is performed. Since the number of steps can be reduced, the manufacturing cost can be reduced and an inexpensive semiconductor device can be provided.

In order to achieve the second object, according to a sixth aspect of the present invention, a semiconductor device according to the present invention is connected to an original pad on a semiconductor substrate having a semiconductor element, and In a semiconductor device provided with a plurality of rearrangement wirings whose parts are exposed as connection pads, at least one circuit element connected to two or more connection pads is provided on the surface where the connection pads are exposed. , Is its main feature. Further, in the method for manufacturing a semiconductor device according to the present invention, as described in claim 9, a plurality of semiconductor substrates provided with semiconductor elements are connected to an original pad and a part of which is exposed as a connection pad. In a method of manufacturing a semiconductor device having relocation wiring, at least one circuit element is provided on a surface where the connection pad is exposed so as to be connected to two or more connection pads. According to the method of manufacturing the device and the semiconductor device, another circuit element is mounted by using the connection pad of the rearrangement wiring to connect the other circuit element to the semiconductor element to form a three-dimensional composite structure. It is possible to provide a semiconductor device that can easily configure the circuit and can follow the demand for high-density packaging.

The above and other objects, constitutional features, and operational effects of the present invention will become apparent from the following description and the accompanying drawings.

[0011]

First, a method of manufacturing a semiconductor device for achieving the first object will be described with reference to FIGS.

FIG. 1 is an original wafer prepared by a known method. In the figure, reference numeral 11 is a silicon wafer, 12 is a passivation film made of SiN or the like, and 13 is a silicon wafer.
Is an original pad made of Al. On this original wafer, semiconductor elements (not shown) such as ICs are formed in a predetermined array, and a plurality of original pads 13 are provided corresponding to each semiconductor element.

In manufacturing, first, as shown in FIG. 2, an insulating paste is printed on the surface of the passivation film 12 by a screen printing method so that the original pad 13 is exposed, and the printed insulating paste is cured to form an interlayer. The insulating film 14 is formed. As the insulating paste for the interlayer insulating film 14, a resin paste made of a thermosetting polyimide resin, BCB (benzocyclobutene) resin, epoxy resin, or the like that can be cured by heat treatment can be used. It is possible to use a photo-curable resin paste made of polyimide resin, BCB resin, epoxy resin, or the like that can be cured by light irradiation. In addition, the interlayer insulating film 14
Can also be formed by a method in which an insulating film is once formed on the entire surface and then only the original pad 13 is exposed by laser processing or the like.

Next, as shown in FIG. 3, the surface of the original pad 13 is plated with Ni and Au by electroless plating.
A UBM layer 15 consisting of layers is formed. This UBM layer 15
The reason why Ni is used is to obtain an adhesive force with the original pad 13 made of Al, and the reason to use Au is to prevent Ni from being oxidized before the formation of the bumps 18 described later. Further, the oxide film formed on the surface of the original pad 13 made of Al is removed in the process of performing the electroless plating method.

Next, as shown in FIG. 4, the interlayer insulating film 14 is formed.
A conductor paste is printed by a screen printing method on the surface of the so that one end portion thereof overlaps the UBM layer 15, and the printed conductor paste is cured to form the rearrangement wiring 16. The conductor paste for the rearrangement wiring 16 includes Ag, Ag and a thermosetting epoxy resin that can be cured by heat treatment.
In addition to the use of a conductor paste made of a material such as -Pd alloy or Ag-Pt alloy to which metal particles are added, it is possible to use Ag, Ag for a photo-curable epoxy resin or the like that can be cured by irradiation with light such as ultraviolet light. A conductor paste made of a material to which metal particles such as —Pd alloy or Ag—Pt alloy is added can be used. By the way, in printing the conductor paste for the rearrangement wiring 16, a thick film forming method other than the screen printing method, for example, a method of drawing the conductor pattern by a dispensing method and curing the drawn conductor paste, or atomizing Ag A method may be used in which a conductive solution dissolved in a solvent is used to draw the conductor pattern by an inkjet method and the drawn conductor paste is cured.

Next, as shown in FIG. 5, the interlayer insulating film 14 is formed.
A protective paste is printed on the surface of the UBM layer 15 by a screen printing method so that a part of the rearrangement wiring 16 is exposed as a connection pad 16a, and the printed protective paste is cured to form a surface protective film 17. . The same protective paste as the insulating paste can be used for the surface protective film 17. The surface protective film 17 can also be formed by a method in which a protective film is once formed on the entire surface by a thick film forming method and then only the connecting pad 16a portion is exposed by laser processing or the like.

Next, as shown in FIG.
Solder paste is printed on the connection pads 16a of No. 6 by the screen printing method, and the printed solder paste is heated and melted to form ball-shaped bumps 18. As the solder paste for the bumps 18, not only Sn—Pb based lead-containing solder but also lead-free solder paste can be used. Incidentally, a method of directly mounting a solder ball or the like can be used to form the bump 18. Further, it is also possible to use not the solder paste but the conductor paste used for the above-mentioned rearrangement wiring as a material used for bump formation, and the shape of the bump 18 may be a shape other than a ball shape.

Next, the wafer 11 on which the bumps 18 have been formed is diced into a chip size to obtain a desired semiconductor device. In the above description, the wafer size is used for the processing, but it is possible to perform the same processing on an IC chip previously diced to the chip size.

FIG. 7 shows a part of a semiconductor device manufactured by using the manufacturing method shown in FIGS. The semiconductor device SC1 is provided with rearrangement wirings 16 of various shapes starting from the original pad 13, and bumps 18 are provided so as to be electrically connected to the connection pads of the rearrangement wirings 16. As can be seen from the figure, the bumps 18 are repositioned two-dimensionally by the rearrangement wiring 16 from the positions of the original pads 13 which are arranged one-dimensionally around the chip.
Is wider than the original pad 13.

As described above, according to the method of manufacturing the semiconductor device shown in FIGS. 1 to 6, the interlayer insulating film 14 and the rearrangement wiring 16 are provided.
Also, by using the thick film forming method for forming the surface protective film 17, an expensive thin film forming device, an exposure and developing device, etc. for providing the rearrangement wiring 16 are not required, and the processing steps can be reduced and the manufacturing cost can be reduced. Then, there is an advantage that an inexpensive semiconductor device can be provided.

Although the bumps 18 are formed directly on the connection pads 16a of the rearrangement wiring 16 in the description based on FIGS. 1 to 6, as shown in FIG. 8, electroless electrolysis is performed on the connection pads 16a. The auxiliary bump 19 may be formed by a plating method, and the bump 20 similar to the above may be formed thereon. Further, by forming the surface protection film 17 thick, the protection for the IC becomes stronger and it becomes possible to handle it as a real size CSP after dicing.

Next, the structure of a semiconductor device for achieving the second object is shown in FIG. The semiconductor device SC2 has a wiring pattern 22 of various shapes connected to the pad 21.
Is provided, and the connection pad 22a is formed in a part thereof. Connection pads 22 of some wiring patterns 22
Solder balls 23 are provided at a for the purpose of connecting to the outside, and the connection pads 22a of some of the arrangement patterns 22 are left as they are as connection terminals for another semiconductor device SC3 shown in FIG. Is exposed at. Further, on the component mounting surface of the semiconductor device SC2, one capacitor section 24 is provided so as to be connected to the connection pads 22a of the two wiring patterns 22, and two resistance sections 25 are connected to each of the two wiring patterns 22. It is provided so as to be connected to the pad 22a.

The capacitor section 24 is composed of a laminated ceramic capacitor or the like, one external terminal of which is connected to the connection pad 22a of the wiring pattern 22 on the left side of the drawing, and the other external terminal of which is connected to the wiring pattern 22 on the right side of the drawing. Pad 22
connected to a. The capacitor section 24 may be provided by connecting a capacitor part which is prepared in advance by using solder or a conductive adhesive, or by directly forming a laminated capacitor circuit on the component mounting surface of the semiconductor device SC2.

Each resistance portion 25 has two wiring patterns 22.
It is formed by applying and hardening a resistance paste by a thick film forming method such as screen printing so as to overlap the connection pads 22a. As the resistance paste for the resistance portion 25, a resistance paste made of a thermosetting or photocuring resin to which metal powder is added, or the like can be used. Of course, each resistor portion 25 may be formed by mounting a resistor component prepared in advance at the same time as the capacitor component by using solder or a conductive adhesive.

The semiconductor device SC3 shown in FIG. 11 has six ball-shaped bumps 31. 12 and 13
As shown in FIG. 5, each bump 31 of the semiconductor device SC3 is connected to the connection pad 22a formed on the semiconductor device SC2. Further, although FIG. 12 shows a state in which the semiconductor device SC3 is mounted on the semiconductor device SC2 so as to cover the capacitor section 24 and the resistance section 25,
The positions of the capacitor portion 24 and the resistor portion 25 are the semiconductor device S.
Needless to say, it is not limited to under C3 and can be arranged at any position on the mounting surface of the semiconductor device SC2.

As can be seen from FIG. 13, the height of the semiconductor device SC3 after mounting is made lower than the height of the solder balls 23 provided in the semiconductor device SC2, whereby the semiconductor device S
When the semiconductor device SC2 on which C3 is mounted is mounted on a substrate or the like, the semiconductor device SC3 does not hinder the mounting.

As described above, according to the semiconductor device SC2 shown in FIGS. 9 and 10 and the semiconductor device shown in FIGS. 12 and 13, the connecting portion 22a of the wiring pattern 22 is used to utilize the capacitor portion 24 and the resistor portion. By mounting passive components such as 25 or another semiconductor device SC3 on the semiconductor device SC2, another circuit element is connected to the semiconductor element of the semiconductor device SC2 to form a three-dimensional composite circuit (FIGS. 9 to 13). (Refer to FIG. 3) can be easily configured, and thus there is an advantage that a semiconductor device that can follow the demand for high-density mounting can be provided.

In the description based on FIGS. 9 to 13, the chip size semiconductor device SC2 is provided with the circuit elements such as the capacitor section 24, the resistance section 25, and the semiconductor apparatus SC3. After mounting the elements, the wafer may be cut into a chip size to obtain the semiconductor device SC2 shown in FIGS. 9 and 10 or the semiconductor device shown in FIGS. 12 and 13.

Although the capacitor portion 24, the resistor portion 25 and the semiconductor device SC3 are illustrated as the circuit elements, it is needless to say that various circuit elements other than these can be mounted, and the shape of the wiring pattern 22 can be arbitrarily changed. .

Further, although the semiconductor device SC2 provided with the solder balls 23 is shown, when mounting a capacitor component and a resistor component prepared in advance on the semiconductor device SC2, the capacitor component or the resistor component is mounted. A solder paste for solder balls 23 (similar to the one shown in FIG. 6) is printed on the connection pads 22a by a screen printing method before passing through a reflow furnace when connecting the capacitor parts and the resistance parts by soldering. At this time, the printed electrode paste for the solder balls 23 may be heated and melted to form the ball-shaped solder balls 23.

Further, the wiring pattern 22 formed on the semiconductor device SC2 can be formed by using the rearrangement wiring manufacturing method shown in FIGS. Further, even when the semiconductor device manufactured by the method of forming the rearranged wiring using the thin film technique as shown in the conventional example is used as the semiconductor device SC2, the same effect as the above can be obtained.

Further, as shown in FIG. 14, a surface protection film 26 is formed on the component mounting surface of the semiconductor device SC2 on which various circuit elements are mounted, the connection terminal portion with the outside is opened, and the opening portion is formed. By embedding the conductor pillars 27 and forming the solder balls 28 on the conductor pillars 27, a true SIP (system-in-package) in which circuit components are incorporated can be made in a real size CSP.

In the formation of the surface protective film 26 and the opening of the connection terminal portion, as described above, various thick film forming methods such as the screen printing method or a protective film is formed on the entire surface of the component mounting surface of SC2, and the connection terminal is formed. A method of opening the portion by laser processing can be used. The conductor columns 27 are formed by an electroless plating method or a method of filling a conductive paste, and the solder balls 28 can be formed by a cream solder printing method or a method of directly mounting the solder balls.

[0034]

As described above in detail, according to the inventions according to claims 1 and 2, since an expensive thin film forming apparatus or the like for performing the relocation wiring is not required and the processing steps can be reduced, the manufacturing It is possible to reduce the cost and provide an inexpensive semiconductor device.

Further, according to the inventions according to claims 6 and 9, it is possible to easily construct a three-dimensional composite circuit by connecting another circuit element to the semiconductor element, whereby high-density mounting can be achieved. It is possible to provide a semiconductor device that can comply with the above requirements.

[Brief description of drawings]

FIG. 1 is a diagram showing a wafer.

FIG. 2 is a sectional view after forming an interlayer insulating film.

FIG. 3 is a sectional view after UBM formation.

FIG. 4 is a cross-sectional view after forming the rearrangement wiring.

FIG. 5 is a cross-sectional view after forming a surface protective layer.

FIG. 6 is a sectional view after bump formation.

FIG. 7 is a diagram showing an example of a semiconductor device manufactured by using the manufacturing method shown in FIGS.

FIG. 8 is a diagram showing a modification of the bump forming method shown in FIG.

FIG. 9 is a diagram showing a state in which circuit components are mounted on a semiconductor device.

FIG. 10 is a side view of FIG.

FIG. 11 is a diagram showing another semiconductor device mounted on the semiconductor device shown in FIG. 9;

12 is a diagram showing a state in which the semiconductor device shown in FIG. 11 is mounted on the semiconductor device shown in FIG.

FIG. 13 is a side view of FIG.

14 is a diagram showing a state in which an insulating film is formed on the semiconductor device shown in FIG. 12 to form an IC package.

[Explanation of symbols]

11 ... Silicon wafer, 12 ... Passivation film,
13 ... Original pad, 14 ... Interlayer insulating film, 16 ... Relocation wiring, 16a ... Connection pad, SC1 ... Semiconductor device, SC2 ... Semiconductor device, 21 ... Pad, 22 ... Wiring pattern, 22a ... Connection pad, 24 ... Capacitor part,
25 ... Resistor section, SC3 ... Semiconductor device.

Claims (9)

[Claims] 1. A semiconductor device comprising a semiconductor substrate having a semiconductor element, and a rearrangement wiring which is connected to an original pad and is partially exposed as a connection pad, wherein the rearrangement wiring is a thick film forming method. A semiconductor device comprising a thick film formed by. 2. A method for manufacturing a semiconductor device, wherein a semiconductor substrate having a semiconductor element is provided with a rearrangement wiring which is connected to an original pad and a part of which is exposed as a connection pad, wherein the rearrangement wiring is a thick film. A method of manufacturing a semiconductor device, characterized by forming by a forming method. 3. The method of manufacturing a semiconductor device according to claim 2, wherein the thick film forming method includes a step of printing a conductor paste by a screen printing method and curing the printed conductor paste. 4. The method of manufacturing a semiconductor device according to claim 2, wherein the thick film forming method includes a step of drawing a conductor paste by a dispenser method and curing the drawn conductor paste. 5. The method of manufacturing a semiconductor device according to claim 2, wherein the thick film forming method includes a step of drawing a conductor paste by an inkjet method and curing the drawn conductor paste. 6. A semiconductor device comprising a semiconductor substrate having a semiconductor element and a plurality of relocation wirings connected to an original pad and partially exposed as a connection pad, wherein the connection pad is exposed. At least one circuit element that is connected to two or more connection pads is provided on the surface of the semiconductor device. 7. The circuit element is a passive component, 7. The semiconductor device according to claim 6, wherein: 8. The semiconductor device according to claim 6, wherein the circuit element is a semiconductor device including a semiconductor element. 9. A method of manufacturing a semiconductor device, wherein a semiconductor substrate having a semiconductor element is provided with a plurality of rearrangement wirings connected to an original pad and a part of which is exposed as a connection pad. A method of manufacturing a semiconductor device, wherein at least one circuit element is provided on the exposed surface so as to be connected to two or more connection pads.