JP2003045800A - Film quality inspection method and apparatus, and manufacturing method of liquid crystal display - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method and an apparatus for quick and accurate inspection of crystallinity in a polycrystalline film without contacts or breakdowns, and to provide a manufacturing apparatus of a liquid crystal display using them. SOLUTION: Two kinds of specific wavelengths are irradiated onto the surface of a polycrystalline film 5 successively for detecting the light intensity or reflection factor of the reflected light, and the results are combined for determining the state of a crystal.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a technique for inspecting a polycrystalline film such as a polysilicon film and an apparatus for manufacturing a liquid crystal display device using the technique.

[0002]

2. Description of the Related Art In manufacturing a liquid crystal display device, an amorphous silicon film (hereinafter referred to as a-Si) formed on a substrate forming the liquid crystal display device is irradiated with laser light. By changing the amorphous silicon film to a polycrystalline (poly) silicon (poly-Si) film (hereinafter referred to as p-Si), a semiconductor film having high electron mobility is often formed. In this case, excimer laser annealing (ELA: Exc) in which a-Si is irradiated with an excimer laser.
The imager Laser Anneal) is usually used.

According to this excimer laser annealing process, the a-Si film is instantly melted and crystallized, so that the substrate is less damaged by heat and the poly-Si film is formed by a low temperature process of about 450 ° C. or less. can do. Therefore, using a large area and inexpensive glass substrate, p-S
There is an advantage that the i film can be formed.

Here, the magnitude of electron mobility is μ = | v
It is expressed by d / E | (cm ² / sV), and is the average moving speed (drift speed: vd (cm) of electrons in the crystal when an electric field E (V / cm) is applied to the crystal. /
It is a value per unit electric field magnitude of s)).

By using such a p-Si film, a thin film transistor having high electron mobility can be formed on a glass substrate by a low temperature process. This p-Si TFT can solve the above problems and provide a thin, high-definition liquid crystal display device in which a driver TFT and a pixel TFT are formed on a glass substrate.

By the way, a-
When the Si film is changed to the p-Si film, it is necessary to monitor whether or not it is formed in an appropriate crystalline state.

As a method of monitoring the crystal state, a film formed on the surface during annealing is removed by etching, and then the surface of the semiconductor film is enlarged and observed by an electron microscope (SEM) to inspect the crystal size. There is.

Further, in Japanese Unexamined Patent Publication No. 2001-110854, abnormalities in crystallization are determined by unevenness formed on the surface of a semiconductor film according to the illuminance of laser light during crystallization treatment such as laser annealing. As possible, there is disclosed a technique of judging pass / fail by light scattered from the semiconductor film.

[0009]

However, in the method of enlarging and observing the surface of the semiconductor film with the SEM as described above, the semiconductor substrate is divided into small pieces for observation with the SEM, and the surface is further etched. This is a necessary destructive inspection. Further, since it is necessary to process the sample for SEM, it cannot be measured immediately after the process, and the crystal state of the inspection result cannot be immediately fed back to the process. In addition, it is difficult to inspect the entire surface of the semiconductor substrate, and if defective crystals exist only in a part of the semiconductor substrate, the defect cannot be detected. For these reasons, it is difficult to apply it to an actual production line and automate it.

Further, the method of determining an abnormality by the scattered light from the unevenness formed on the surface of the semiconductor film, which is disclosed in Japanese Patent Laid-Open No. 2001-110854, can be applied only to the annealing process in which the unevenness is formed. Yes, it depends on versatility.

The present invention has been made based on these circumstances, and a method for inspecting a polycrystalline film, which is capable of inspecting the crystallinity of the polycrystalline film in a non-contact, non-destructive manner at high speed and with high accuracy, and It is an object of the present invention to provide an apparatus and a manufacturing apparatus for a liquid crystal display device using them.

[0012]

According to the means of the present invention, a silicon film annealed by laser light is irradiated with light, and the reflected light is detected to detect the reflected light of the silicon film. In a film quality inspection method for inspecting a film quality, a step of irradiating the silicon film with light having a wavelength in a predetermined range, a step of detecting reflected light of the irradiated light to obtain a first detection signal, and the silicon A step of irradiating the film with light having a wavelength different from the predetermined range; a step of detecting reflected light of the applied light to obtain a second detection signal; Corresponding said first
And a film quality inspection method which inspects the film quality of the silicon film based on the second detection signal.

According to the means of the present invention, in the film quality inspection method for inspecting the film quality of a silicon film annealed by laser light, the silicon film has a thickness of 480 nm to 5 nm.
A first irradiation step of irradiating light including at least one wavelength of 20 nm, and 480n of reflected light of the irradiated light.
a step of detecting reflected light having a wavelength in the range of m to 520 nm to obtain a first detection signal, and 530 n in the silicon film.
a second irradiation step of irradiating light including at least one wavelength of m to 570 nm, and a second detection signal by detecting reflected light having a wavelength within a range of 530 nm to 570 nm of the reflected light of the irradiated light. And a film quality inspection method for inspecting the film quality of the silicon film based on the first and second detection signals corresponding to substantially the same region of the silicon film.

Further, according to the means of the present invention, in the film quality inspection method for inspecting the film quality of the silicon film annealed by the laser beam, while scanning light with a wavelength in a predetermined range, a predetermined region of the silicon film is scanned. A first irradiation step of irradiating, and a first detection obtained by receiving reflected light of the light irradiated in the first irradiation step and detecting the reflected light at a plurality of positions in the predetermined region. A step of acquiring a signal; a second irradiation step of irradiating the predetermined region of the silicon film while scanning light having a wavelength different from the predetermined range; and a step of irradiating in the second irradiation step. A step of collecting reflected light of light and obtaining a second detection signal obtained by detecting the reflected light at a plurality of positions in the predetermined region, and corresponding to the same position among the plurality of positions. First obtained Beauty is a quality inspection method characterized by comprising the step of inspecting the quality of the silicon film based on the second detection signal.

According to the means of the present invention, the film quality of the silicon film annealed by laser light is irradiated, and the film quality of the silicon film is inspected based on the signal obtained by detecting the reflected light. In the inspection method, a step of irradiating the silicon film with light, a step of detecting reflected light having a wavelength in a first range among reflected light of the irradiated light, and obtaining a first detection signal, Of the reflected light of the irradiated light, a step of detecting a reflected light having a wavelength in a second range different from the first range to obtain a second detection signal, and the same area of the silicon film The film quality inspection method is characterized by inspecting the film quality of the silicon film based on the corresponding first and second detection signals.

According to the means of the present invention, the film quality of the silicon film annealed by the laser beam is irradiated, and the film quality of the silicon film is inspected based on the signal obtained by detecting the reflected light. In the inspection method, a step of irradiating the silicon film with light of a single wavelength, a step of detecting a reflected light of the irradiated light to obtain a detection signal, and a film quality of the silicon film based on the detection signal And a step of inspecting.

According to the means of the present invention, the film quality of the silicon film annealed by the laser beam is irradiated with light, and the film quality of the silicon film is inspected based on the signal obtained by detecting the reflected light. In the inspection apparatus, a stage on which the substrate on which the silicon film is formed is placed, a light source for emitting light for irradiating the silicon film formed on the substrate placed on this stage, and a light source from this light source An irradiation unit for selectively irradiating the silicon film with light having different wavelengths from the light emitted from the state, and an optical sensor for receiving the reflected light of the irradiated light and converting it into an electric signal. A film quality inspecting device comprising: a film quality determining unit that determines the film quality of the silicon film based on an electric signal output from the optical sensor.

According to the means of the present invention, a film forming step of forming an amorphous silicon film on a substrate, a laser annealing step of irradiating the silicon film with a laser beam to perform annealing, and the annealed aforesaid In a method for manufacturing a liquid crystal display device, which includes an inspection step of inspecting a film quality of a silicon film and a step of forming a driver transistor and a pixel transistor including the annealed silicon film on the substrate, the inspection step includes Irradiating the silicon film with light having a wavelength in a first specific range; detecting reflected light of the irradiated light to obtain a first detection signal; Irradiating light having a second specific range of wavelengths different from the specific range; detecting reflected light of the irradiated light to obtain a second detection signal; Based on the first and second detection signals corresponding to substantially the same region of the membrane, a method of manufacturing a liquid crystal display device characterized in that it comprises a step of inspecting the quality of the silicon film.

In the present invention, "light of a single wavelength" means light containing 95% or more of energy within a range of at most 5 nm.

[0020]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below with reference to the drawings.

With low temperature p-Si, p-Si can be manufactured by a low temperature process by utilizing excimer laser annealing. As a result, a p-Si TFT-LCD can be commercialized on a large glass substrate equivalent to a-Si.

When p-Si is used, the TFT can be downsized,
Since a driving IC can be built in, a-Si TFT-LC
It is possible to solve problems such as lower aperture ratio and restriction of high definition, which are problems in D, high brightness suitable for mobile LCD,
Features such as low power consumption, high definition, improved durability, light weight and thinness can be obtained.

As shown in the schematic views of FIGS. 1 (a) to 1 (c), in order to manufacture a TFT in which a p-Si film is formed on a glass substrate, the glass substrate is not deformed and is formed on the glass substrate. It is necessary to form a p-Si film. In order to form a p-Si film under such constraints, first, as shown in FIG. 1A, a base protective film 2 made of a silicon oxide film or the like is formed on the surface of a substrate 1 made of clean alkali-free glass or the like. Plasma C
It is formed by the VD method. Then, the a-Si film 3 is formed on the surface of the base protective film 2 by the plasma CVD method.

Next, as shown in FIG. 1 (b), a-Si
Laser light 4 is focused on the film 3 to irradiate it with a laser beam having an increased energy density, and a laser annealing process is performed.
The -Si film 3 is annealed to be polycrystallized to form the p-Si film 5.

Next, as shown in FIG. 1C, a laser spot is scanned to polycrystallize the a-Si film 3 formed on the entire surface of the substrate 1.

When the p-Si film 5 is subjected to the laser annealing treatment, the higher the laser power used for the p-Si film 5, the larger crystals are formed and the electric mobility is improved, so that the electrical device characteristics are improved. However, when the laser power is too high and exceeds a certain value, the crystal grain size becomes small immediately. It is known that when the crystal becomes smaller, the electric mobility becomes lower and the performance of the device becomes poor.

Further, the grain size of the crystal does not have to be simply increased, and it is necessary to polycrystallize with an electric mobility suitable for an electric circuit formed on the surface of the substrate 1, that is, with an appropriate grain size. For that purpose, it is necessary to inspect and manage the grain size formed on the surface of the substrate 1.

The inventor of the present invention has a basic idea about the inspection and management of the state of these crystals that the p-Si film 5 is polycrystallized by the laser annealing process and has different wavelengths specific to the crystal. It was found that the state of the crystal can be determined with high accuracy by irradiating each of the samples, detecting the reflected light intensity corresponding to each irradiation wavelength, and combining the results.

2 and 3, laser annealing is applied to the p-Si film 5 to prepare a sample according to the degree of grain size growth, and the sample is irradiated with light of a specific wavelength and reflected. It is a distribution diagram of the data which measured the light intensity (average intensity). 2 and 3, the vertical axis represents the reflected light intensity, the horizontal axis represents the sample number according to the degree of progress of the crystal (change in particle size), and thereby the region (-) is classified into four. is doing. In this case, as the crystal grows, the region has a grain size of 0.5 μm or less, and the region has a grain size of 0.5 to 0.5 μm.
1.0 μm, the region has a grain size of 1.0 μm or more, and
The region has a grain size of 0.1 μm or less. Also, FIG.
Then, as the irradiation light, the wavelength using the green filter is 5
The light having a wavelength of 40 nm to 560 nm and having a wavelength of 490 nm to 510 using a blue filter is used as the irradiation light in FIG.
nm light.

Looking at the distribution for each area, in FIG. 2, the distributions of the reflected light intensities in the areas are almost in the same range, and therefore they cannot be identified. However, since the areas and the areas are distributed in different ranges, they can be identified. Therefore, if the areas can be further identified, the four areas can be identified.

Next, looking at the distribution of each area in FIG.
Although it is difficult to separate the regions from each other, the regions can be easily distinguished from each other because the regions are distributed in different ranges.
Therefore, if the results shown in FIGS. 2 and 3 are combined, it is possible to perform accurate classification for the four regions.

Next, a manufacturing apparatus for a liquid crystal display device, which is a thin film processing apparatus of the present invention using the above principle, will be described.

FIG. 4 is a schematic block diagram of an apparatus for manufacturing a liquid crystal display device equipped with the laser annealing apparatus and the polycrystalline film inspection apparatus of the present invention.

In the liquid crystal display manufacturing apparatus, the laser annealing apparatus 10 and the polycrystalline film inspecting apparatus 30 are the transfer robots 4.
They are arranged laterally across 0. Transport robot 40
Arm 41 penetrates into the inside of laser annealing device 10 and polycrystalline film inspection device 30, and laser annealing device 10
The structure is such that the p-Si substrate 6 which is the object to be processed therein can be transported into the polycrystalline film inspection apparatus 30.

The laser annealing apparatus 10 is provided with an XY scanning table 13 for placing and moving an a-Si substrate 7 which is an object to be processed, inside a sealed reaction container 11. The XY scanning table 13 is drive-controlled by a table drive system 16 via a system control system 15 controlled by a host computer 14.

Further, an excimer laser entrance window 17 which is a translucent window is provided on the top plate of the reaction vessel 11. Above the excimer laser entrance window 17, the imaging lens 20, the mirror 21a, and the beam homogenizer 2 are sequentially arranged on the optical axis toward the excimer laser oscillator 19 side.
2, variable attenuator 23, mirror 2
1b, 21c and an excimer laser oscillator 19 are arranged. The excimer laser oscillator 19 uses XeCl that oscillates light having a wavelength of 308 nm as a laser medium, but other laser medium such as ArF or KrF can also be used. In addition, the excimer laser oscillator 19
Are controlled by the host computer 14.

With these configurations, the XY scanning table 1
In the state where the glass substrate (a-Si substrate 7) on which the a-Si film 3 that is the object to be processed is formed is placed on the substrate 3, the excimer laser light oscillated by the excimer laser oscillator 19 is reflected by the mirror 21.
Line beam homogenizer 22 via c and 21b
Then, the beam shape is shaped into a line shape (for example, the shape of the beam cross section is a band shape of 200 mm × 0.5 mm) to make the energy intensity top flat. This line beam irradiates the glass substrate 7 on which the a-Si film 3 is formed by the image forming lens 20 via the mirror 21a, and the XY scanning table 13 is scanned, whereby the surface a of the glass substrate 7 is irradiated.
-Polycrystallize the entire surface of the Si film 3. At this time, the variable attenuator 23 is used to control the laser output of the excimer laser oscillator 19 with a fluence suitable for polycrystallization.

The inside of the reaction vessel 11 is constructed so that the atmosphere of dry air can be controlled in a nitrogen or vacuum atmosphere.

Objects to be processed (p-Si) that have been processed by these laser annealing devices 10 and have a predetermined grain size are formed.
The substrate 6) is transferred to the polycrystalline film inspection device 30 by the transfer robot 40. For this transfer, the arm 41 of the transfer robot 40 enters the inside of the reaction container 11 through an opening / closing port (not shown) provided on the side wall of the reaction container 11, and moves to the XY scanning table 13 in the reaction container 11. The mounted p-Si substrate 6 is mounted and gripped, and transferred to the stage 31 provided inside the polycrystalline film inspection apparatus 30.

As shown in the schematic configuration diagram of FIG. 5, the polycrystalline film inspecting apparatus 30 is arranged above the XY table 31 on which the glass substrate 1 on which the p-Si film 5 to be measured is formed is placed. A detection optical system is arranged. This detection optical system is XY
The magnifying optical system 3 is sequentially arranged along the optical axis from the table 31 side.
2, a half mirror 33, and a two-dimensional optical sensor 34 arranged in the optical axis direction on the transmission side of the half mirror 33. The electric signal photoelectrically converted by the two-dimensional optical sensor 34 is subjected to image processing.
It is configured to be output to the crystallinity determination unit 35. A switchable wavelength selection mechanism 36 and a multicolor light source 37 are provided on the optical axis of the half mirror 33 on the reflection side.

As a result, of the light emitted from the multicolor light source 37 such as a halogen lamp, only the light of the first specific wavelength is selected by the wavelength selection mechanism 36 and passed through the magnifying optical system 32 via the half mirror 33. The surface of the p-Si film 5 is illuminated. The reflected light from the surface of the p-Si film 5 is magnified to an arbitrary magnification by the magnifying optical system 32 and projected as an image on the surface of the two-dimensional optical sensor 34. The two-dimensional optical sensor 34 converts the projected image of the film into an electric signal and outputs it to the image processing / crystallinity determination unit 35. The p-Si film 5 is formed on the XY table 3.
In accordance with the operation of No. 1, the entire surface is sequentially irradiated with the light of the first specific wavelength, and the reflected light is sequentially projected on the surface of the two-dimensional optical sensor 34, and the result is an image processing / crystallinity discriminating unit as an electric signal. 35 is input.

Next, the wavelength selection mechanism 36 performs a switching operation to select only the light of the second specific wavelength. Below, the first
Repeat the same operation as in the case of the light of the specific wavelength of
-Reflected light from the surface of the Si film 5 is projected on the surface of the two-dimensional photosensor 34, and the result is image processed as an electric signal.
Input to the crystallinity determination unit 35.

The image processing / crystallinity discriminating unit processes the image data converted into the electric signal from the reflected light from the light of the first and second specific wavelengths, and calculates the combined results. The crystal state is determined from the light intensity of the image.

It is necessary to inspect the state of the crystal by enlarging it because the crystal is minute. Therefore, as shown in the image in FIG. 6, the surface of the p-Si film 5 is magnified and inspected by a magnifying optical system. Note that FIG. 6 is an example of an image when green light is emitted. The bright part shows the area in Figure 2.
The dark area shows the area of FIG. The image processing / crystallinity discriminating unit takes in an image as shown in FIG. 6 and discriminates the crystal state for each area from the intensity of each area of the image.

Next, the measurement results by the polycrystalline film inspection device 30 will be described.

As described above, the reflected light intensity when the p-Si film 5 is irradiated with light of a specific wavelength changes depending on the size of the grain size of the p-Si film 5. In particular, it was experimentally confirmed that, when irradiated with green and blue, the characteristic changes due to the respective particle sizes are remarkably exhibited.

FIG. 2 shows the green color (wavelength of 54
It is a graph showing the relationship between the particle size and the reflected light intensity when light of 0 nm to 560 nm) is irradiated. In addition, FIG.
It is a graph which shows the same relationship in the case of blue (wavelength is 490 nm-510 nm). The horizontal axes of FIGS. 2 and 3 are sample numbers, and the sample numbers are classified by particle size. Note that the sample numbers 1 to 4 in FIG. 2 and the sample numbers 1 to 3 in FIG. 3 are regions in which the particle size is extremely small. This is the region where the grain size has become smaller.

When green light is irradiated as shown in FIG. 2, a region having a large grain size of 1 μm or more and a region where the grain size suddenly becomes small are reflected most strongly and the reflected light intensity is high. As the particle size decreases from a region having a particle size of 1 μm or less to a region having a particle size of 0.5 μm or less, reflection weakens and reflected light intensity decreases. By utilizing this, it is possible to discriminate the regions and the grain sizes of the regions and the regions.

When blue light is emitted as shown in FIG. 3, the reflected light intensity of the area is the highest, and the area is the next highest. Low. Therefore, it is possible to discriminate the area from area to area and the area to area.

By using a combination of the relationship between the reflected light intensity and the particle size at the time of irradiating light of these specific wavelengths of green and blue, it is possible to separate each region.
Thereby, the grain size of the p-Si film 5 can be inspected.

By adjusting the output of the laser oscillator 19 of the laser annealing apparatus 20 using these inspection results, a good and uniform laser annealing process can be performed.

In the above embodiment, the specific wavelength is 540 nm to 560 nm (first specific wavelength, and wavelength is 490 nm to 510 nm (second specific wavelength)).
However, not limited to this combination, any combination of wavelengths can be used as the combination of the specific wavelengths as long as they have a relationship of complementing each other's data separation. For example, the first specific wavelength may be expanded to 480 nm to 570 nm and the second specific wavelength may be expanded to 530 nm to 570 nm.

Further, in the above-mentioned polycrystalline film inspection apparatus 30, the light intensity of the reflected light from the p-Si film 5 was detected.
The reflectance from each area may be detected and the data processed.

In addition, in the inspection of the grain size of the p-Si films 5 in the polycrystalline film inspection device 30 in the liquid crystal display device manufacturing apparatus, it is not always necessary to inspect every particle, and the inspection is performed depending on the production yield. Then, the sampling inspection may be performed at arbitrary intervals.

As a result, the crystal state of the laser annealing process can be stabilized and the production yield can be improved.

The inventions described in claims 1 to 4 are not limited to the film quality inspection method using only wavelengths in two ranges, but use wavelengths in at least two ranges. . Therefore, the film quality inspection may be performed using wavelengths in three ranges or wavelengths in four ranges.

Further, it has been clarified that the reflectance of a specific wavelength is different based on the crystalline state of the silicon film. Therefore, it is possible to irradiate light of a single wavelength and determine the crystalline state based on the reflected light. it can. For example, in the embodiment of the present invention, when irradiated with green light, the particle size is 1 μm.
Since the above crystalline state can be distinguished from the grain size of 1 μm or less, this distinction can be made using a single wavelength of green light. When the laser beam is irradiated under the condition that the particle size does not reach 0.1 μm (in FIG. 2), the method of inspecting the film quality using only a single wavelength is also useful.

Further, the substrate is moved while irradiating the first specific wavelength to obtain the data of the reflected light intensity on the entire surface of the substrate, and then the substrate is moved while irradiating the second specific wavelength to move the substrate. It is also possible to acquire the reflected light intensity data for the entire surface and perform a film quality inspection on the entire surface of the substrate based on both data. According to this method, the entire surface of the substrate is first scanned with the laser beam of the 1st specific wavelength,
After obtaining the reflected light intensity data for a plurality of positions within the predetermined region, and then similarly obtaining the reflected light intensity data for a plurality of positions within the predetermined region for the laser light of the second specific wavelength, the data corresponding to the same position is obtained. Although the film quality of the silicon film at that position will be inspected based on each reflected light intensity data obtained by the above, it is possible to reduce the number of times of switching by the wavelength selection mechanism and to shorten the inspection time. It will be possible.

Further, in the present embodiment, the irradiation light is separated into two kinds of wavelength regions by using the wavelength selection mechanism, but it is also possible to modify so as to selectively receive the wavelength. For example, a wavelength selection mechanism may be arranged in front of the optical sensor 34, or the reflected light may be spatially separated into green and blue by using a dichroic prism, and image pickup may be performed by using two optical sensors. You can also do it. In the case of this method, it is possible to detect in two kinds of wavelength regions at the same time by one irradiation, so that it is possible to shorten the inspection time.

[0060]

According to the present invention, the crystal of the multilayer film formed on the surface of the substrate can be inspected nondestructively at high speed and with high accuracy.

Thereby, the liquid crystal display device can be efficiently produced.

[Brief description of drawings]

1A to 1C are schematic views of steps of forming a p-Si film on a glass substrate.

FIG. 2 is distribution data of reflected light.

FIG. 3 is distribution data of reflected light.

FIG. 4 is a schematic configuration diagram of an apparatus for manufacturing a liquid crystal display device of the present invention.

FIG. 5 is a schematic configuration diagram of a polycrystalline film inspection device of the present invention.

FIG. 6 is an enlarged screen of reflected light from the p-Si film.

[Explanation of symbols]

1 ... Substrate, 3 ... a-Si film, 5 ... p-Si film, 6 ... p-
Si substrate, 7 ... a-Si substrate, 10 ... Laser annealing device, 30 ... Polycrystalline film inspection device

─────────────────────────────────────────────────── ─── Continuation of front page (51) Int.Cl. ⁷ Identification code FI theme code (reference) G09F 9/30 310 G09F 9/30 310 5G435 9/35 9/35 H01L 21/336 H01L 29/78 624 29 / 786 627G F Term (Reference) 2G059 BB16 DD13 EE02 EE11 GG01 HH02 HH03 HH06 JJ11 JJ13 JJ25 JJ30 KK04 MM09 2H092 JA05 JA24 JA28 KA01 KA04 MA07 MA08 MA35 MA01 MA35 NA02 5C094 AA43 BA43 DA07 A02 BA02 DA01 A02 GG02 GG13 GG16 GG45 PP03 PP05 PP06 5G435 AA17 BB12 EE33 KK05 KK10

Claims (7)

[Claims] 1. A film quality inspection method for inspecting the film quality of the silicon film based on a signal obtained by irradiating a silicon film annealed by laser light with light and detecting the reflected light. A step of irradiating with light having a wavelength in a predetermined range, a step of obtaining a first detection signal by detecting reflected light of the irradiated light, A step of irradiating light, a step of detecting a reflected light of the emitted light to obtain a second detection signal, and a step of detecting the first and second detection signals corresponding to substantially the same region of the silicon film. On the basis of the above, a film quality inspection method comprising inspecting the film quality of the silicon film. 2. A film quality inspection method for inspecting the film quality of a silicon film annealed by laser light, comprising: a first irradiation step of irradiating the silicon film with light containing at least one wavelength of 480 nm to 520 nm; and 480 nm to 520 of the reflected light of the light
a step of detecting reflected light having a wavelength in the range of nm to obtain a first detection signal; a second irradiation step of irradiating the silicon film with light including at least one wavelength of 530 nm to 570 nm; 530 nm to 570 of the reflected light of the light
a step of obtaining a second detection signal by detecting reflected light having a wavelength in the range of nm; and a film quality of the silicon film based on the first and second detection signals corresponding to substantially the same region of the silicon film. A film quality inspection method for inspecting. 3. A film quality inspection method for inspecting the film quality of a silicon film annealed by laser light, wherein a first irradiation step of irradiating a predetermined region of the silicon film while scanning light with a wavelength in a predetermined range. And a step of receiving reflected light of the light emitted in the first irradiation step and acquiring a first detection signal obtained by detecting the reflected light at a plurality of positions in the predetermined region, A second irradiation step of irradiating the predetermined area of the silicon film while scanning light having a wavelength different from the predetermined range, and collecting the reflected light of the light irradiated in the second irradiation step. Then, a step of acquiring a second detection signal obtained by detecting the reflected light at a plurality of positions within the predetermined region, and a first position obtained corresponding to the same position among the plurality of positions.
And a step of inspecting the film quality of the silicon film based on a second detection signal. 4. A film quality inspection method for irradiating light on a silicon film annealed by laser light, and inspecting the film quality of the silicon film based on a signal obtained by detecting the reflected light, comprising: A step of irradiating a light on the substrate, a step of obtaining a first detection signal by detecting a reflected light of a wavelength in a first range among the reflected light of the irradiated light, and a step of reflecting the irradiated light. Of the light, a step of detecting reflected light having a wavelength in a second range different from the first range to obtain a second detection signal; and the first and the first areas corresponding to the same area of the silicon film. Two
A film quality inspection method comprising inspecting the film quality of the silicon film based on the detection signal of. 5. A film quality inspection method for irradiating a silicon film annealed by laser light with light, and inspecting the film quality of the silicon film based on a signal obtained by detecting the reflected light, comprising: A step of irradiating a single wavelength of light on the substrate, a step of detecting a reflected light of the emitted light to obtain a detection signal, and a step of inspecting the film quality of the silicon film based on the detection signal. A film quality inspection method characterized in that 6. A film quality inspection device for irradiating a silicon film annealed by laser light with light, and inspecting the film quality of the silicon film based on a signal obtained by detecting the reflected light. The stage on which the substrate on which is formed is placed, the light source for emitting light for irradiating the silicon film formed on the substrate placed on this stage, and the light emitted from the light source An irradiation means for selectively irradiating the silicon film with light of wavelengths in different ranges, an optical sensor for receiving the reflected light of the irradiated light and converting it into an electric signal, and an output from this optical sensor. And a film quality discriminating means for discriminating the film quality of the silicon film based on the electric signal. 7. A film forming step of forming an amorphous silicon film on a substrate, a laser annealing step of irradiating the silicon film with a laser beam to perform annealing, and inspecting the film quality of the annealed silicon film. In a method of manufacturing a liquid crystal display device, comprising: an inspecting step; and a step of forming a driver transistor and a pixel transistor having the annealed silicon film on the substrate, A step of irradiating light with a wavelength in a specific range; a step of detecting a reflected light of the irradiated light to obtain a first detection signal; a second step different from the first specific range on the silicon film; The step of irradiating light having a wavelength in a specific range, the step of detecting the reflected light of the irradiated light to obtain a second detection signal, And a step of inspecting the film quality of the silicon film based on the first and second detection signals.