JP2003033887A - Laser beam machining method - Google Patents

Laser beam machining method

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Publication number
JP2003033887A
JP2003033887A JP2002093060A JP2002093060A JP2003033887A JP 2003033887 A JP2003033887 A JP 2003033887A JP 2002093060 A JP2002093060 A JP 2002093060A JP 2002093060 A JP2002093060 A JP 2002093060A JP 2003033887 A JP2003033887 A JP 2003033887A
Authority
JP
Japan
Prior art keywords
laser
light
cut
cutting
workpiece
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002093060A
Other languages
Japanese (ja)
Inventor
Kenji Fukumitsu
Fumitsugu Fukuyo
Naoki Uchiyama
Toshimitsu Wakuta
直己 内山
敏光 和久田
文嗣 福世
憲志 福満
Original Assignee
Hamamatsu Photonics Kk
浜松ホトニクス株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP2000278306 priority Critical
Priority to JP2000-278306 priority
Application filed by Hamamatsu Photonics Kk, 浜松ホトニクス株式会社 filed Critical Hamamatsu Photonics Kk
Priority to JP2002093060A priority patent/JP2003033887A/en
Publication of JP2003033887A publication Critical patent/JP2003033887A/en
Pending legal-status Critical Current

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36Removing material
    • B23K26/40Removing material taking account of the properties of the material involved
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50Working by transmitting the laser beam through or within the workpiece
    • B23K26/53Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00Articles made by soldering, welding or cutting
    • B23K2101/36Electric or electronic devices
    • B23K2101/40Semiconductor devices
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00Materials to be soldered, welded or cut
    • B23K2103/50Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26

Abstract

PROBLEM TO BE SOLVED: To provide a laser beam machining method allowing cutting of a machining object without any fusion or a crack deviated from the planned cutting line on its surface. SOLUTION: The laser beam machining method is characterized by that it comprises a process of fixing a machining object 1 to a cohesive surface of a sheet (film), and a process of radiating laser beam L into the machining object 1 by focusing a focal point P inside it to form a modified area within the machining object 1 along the planned cutting line 5 of the machining object 1.

Description

Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor material substrate,
Used to cut workpieces such as piezoelectric material substrates and glass substrates
The present invention relates to a laser processing method. One of the laser applications is cutting, and laser
The general cutting by is as follows. For example, semiconductor wafer
Where to cut workpieces such as wafers and glass substrates
Is irradiated with laser light having a wavelength that is absorbed by the workpiece.
-At the part to be cut by absorbing the light,
The object to be processed by heating and melting from the front to the back
Disconnect. However, with this method, the surface of the workpiece
Of these, the area surrounding the area to be cut is also melted. By
If the workpiece is a semiconductor wafer,
Of the semiconductor elements formed on the surface, it is
The semiconductor element to be placed may be melted. SUMMARY OF THE INVENTION Problems to be Solved by the Invention
As a method for preventing melting, for example, JP 2000-21
No. 9528 and JP 2000-15467.
There is a laser cutting method shown. Of these publications
In the cutting method, the part of the workpiece to be cut is changed to laser light.
By heating more and cooling the workpiece,
A thermal shock is generated at the part to be cut of the workpiece to be processed.
Cut the figurine. However, in the cutting methods of these publications, additional processing is required.
If the thermal shock generated on the workpiece is large, the surface of the workpiece
In addition, cracks that are off the cutting line or laser irradiation
Unnecessary cracks such as cracks up to the previous point may occur.
There is. Therefore, these cutting methods perform precision cutting.
I can't. In particular, the object to be processed is a semiconductor wafer,
The glass substrate and electrode pattern on which the liquid crystal display device is formed
In the case of the formed glass substrate, this unnecessary cracking
Damage to semiconductor chips, liquid crystal display devices and electrode patterns
Sometimes. Also, with these cutting methods, the average input energy
Because the energy is large, the thermal damage to the semiconductor chip etc.
The page is also big. The object of the present invention is to make the surface of the work piece unnecessary.
The surface does not melt without causing necessary cracks.
It is to provide a laser processing method. Means for Solving the Problems Laser processing according to the present invention
The method is on a sheet (film) having a sticky surface.
The process of fixing the workpiece and condensing inside the workpiece
Align the dots and irradiate the laser beam to cut the workpiece
Form a modified region inside the workpiece along the line
And a process. According to the laser processing method of the present invention, additional processing is performed.
Align the focusing point inside the work object and irradiate the laser beam.
A modified region is formed inside the workpiece. Processing target
If there is any starting point at the part to be cut,
Can be cut with a relatively small force. Main departure
According to Ming's laser processing method, the modified region is the starting point.
If the workpiece is broken along the cutting line
Thus, the workpiece can be cut. So compare
Since the workpiece can be cut with a small force,
Unnecessary deviated from the planned cutting line on the surface of the workpiece
It is possible to cut the workpiece without causing cracks.
The Also, according to the laser processing method of the present invention,
For example, a modified region is locally formed inside the workpiece.
The Therefore, almost no laser light is on the surface of the workpiece.
Since it is not absorbed, the surface of the workpiece will melt
Absent. The condensing point is the part where the laser beam is condensed.
It is. The line to be cut is applied to the surface or inside of the workpiece.
It may be a line drawn at the time or a virtual line. DESCRIPTION OF THE PREFERRED EMBODIMENTS Preferred embodiments of the present invention will be described below.
This will be described with reference to the drawings. Laser according to this embodiment
The processing method forms a modified region by multiphoton absorption.
The Multiphoton absorption is a field where the intensity of laser light is greatly increased.
This is a phenomenon that occurs when First, let us briefly discuss multiphoton absorption.
Just explain. Band gap E of material absorption G Than light
When the energy hν of the child is small, it becomes optically transparent. Yo
Thus, the condition for the absorption of the material is hν> E G It is. Shi
However, even if it is optically transparent, the intensity of the laser beam is very high.
Nhν> E G Conditions (n = 2, 3, 4,...
The material absorbs. Multiphoton absorption of this phenomenon
That's it. In the case of a pulse wave, the intensity of the laser beam is
Peak power density at condensing point (W / cm 2 ) And example
For example, the peak power density is 1 × 10 8 (W / cm 2 )More than
Multiphoton absorption occurs under certain conditions. The peak power density is
Energy per pulse of laser light at the light spot)
÷ (Laser beam beam spot cross section x pulse width)
Is required. In the case of continuous wave, the intensity of the laser beam is
Electric field intensity (W / cm at the focal point of the laser beam 2 ) This embodiment utilizing such multiphoton absorption
1 to 6 on the principle of laser processing related to the state
explain. FIG. 1 is a plan view of a workpiece 1 during laser processing.
2 is a II-II line of the workpiece 1 shown in FIG.
3 is a cross-sectional view taken along the line, FIG.
FIG. 4 is a plan view of the object 1, and FIG.
FIG. 5 is a sectional view taken along line IV-IV, and FIG. 5 is shown in FIG.
FIG. 6 is a cross-sectional view taken along line VV of the workpiece 1 and FIG.
1 is a plan view of a cut workpiece 1. FIG. As shown in FIG. 1 and FIG.
The surface 3 has a cutting line 5. Scheduled cutting line
Reference numeral 5 denotes a virtual line extending linearly. The label according to this embodiment
-The laser processing is performed under the condition that multiphoton absorption occurs.
The laser beam L is applied to the workpiece 1 with the focusing point P inside.
Irradiation forms the modified region 7. Note that the focal point is the laser
It is a portion where the light L is condensed. The laser beam L is projected along the cutting line 5
(Ie, along the direction of arrow A)
To move the condensing point P along the planned cutting line 5.
Make it. As a result, as shown in FIGS.
Is only inside the workpiece 1 along the planned cutting line 5
It is formed. The laser processing method according to the present embodiment is processed
The object 1 is processed by absorbing the laser beam L.
The modified region 7 is not formed by heating 1. processing
The laser beam L is transmitted through the object 1 and inside the object 1 to be processed.
The modified region 7 is formed by generating multiphoton absorption. Yo
Thus, the laser beam L is almost on the surface 3 of the workpiece 1.
Since it is not absorbed, the surface 3 of the workpiece 1 melts.
Is not. In cutting the workpiece 1, the parts to be cut
If there is a starting point, the workpiece 1 will break from that starting point.
Then, as shown in FIG. 6, the workpiece 1 is moved with a relatively small force.
Can be cut. Therefore, the surface 3 of the workpiece 1
Cutting workpiece 1 without causing unnecessary cracks
Can be interrupted. It should be noted that the workpiece to be processed starting from the modified region.
There are two possible ways of cutting. One is a modified area type
After the process, artificial force is applied to the workpiece.
As a result, the workpiece is cracked starting from the modified region,
This is when an object is cut. This is for example a workpiece
This is cutting when the thickness is large. An artificial force is applied
For example, along the planned cutting line of the workpiece
To apply bending stress or shear stress to the workpiece.
Thermal stress was generated by giving a temperature difference to the object
It is to do. The other is to form a modified region.
The cross-sectional direction of the workpiece from the modified region
Naturally cracks in the (thickness direction), resulting in processing
This is when an object is cut. This is for example a workpiece
If the thickness is small, even one modified region is possible,
When the thickness of the workpiece is large, multiple modifications in the thickness direction
This is possible by forming the region. Note that this nature
Even if it is
The crack does not run ahead to the part where is not formed,
Only the part that formed the reforming part can be cleaved.
Therefore, the cleaving can be controlled well. In recent years, silicon
The thickness of semiconductor wafers such as wafers tends to decrease
Therefore, such a cleaving method with good controllability is very effective.
The In the present embodiment, multiphoton absorption is used.
The following modified areas (1) to (3) are
The (1) One or more cracks in the modified region
In the case of a crack region containing a laser beam, the object to be processed (eg glass or LiTaO Three Or
The focusing point inside the piezoelectric material)
The electric field strength is 1 × 10 8 (W / cm 2 )
Irradiation is performed under the condition that the pulse width is 1 μs or less. Of this pulse width
The size on the surface of the workpiece while causing multiphoton absorption
Click inside the workpiece without undue damage.
This is a condition for forming the rack region. This process
Inside the object, there is an optical damage caused by multiphoton absorption.
An elephant is generated. Because of this optical damage,
Thermal strain is induced in the workpiece, which
A crack region is formed. As upper limit of electric field strength
Is for example 1 × 10 12 (W / cm 2 ). pulse width
Is preferably 1 ns to 200 ns, for example. Multiphoton
The formation of crack regions by absorption is, for example, the 45th time
-The second of The Thermal Processing Study Group Proceedings (December 1998)
"Glass substrate with solid laser harmonics" on pages 3 to 28
It is described in “Internal marking of the board”. The inventor found that the electric field strength and crack size
The relationship was determined by experiment. The experimental conditions are as follows:
is there. (A) Processing object: Pyrex (registered trademark) glass
(Thickness 700 μm) (B) Laser light source: semiconductor laser excitation Nd: YAG laser wavelength: 1064 nm Laser beam spot cross-sectional area: 3.14 × 10 -8 cm 2 Oscillation form: Q switch pulse repetition frequency: 100 kHz Pulse width: 30 ns Output: Output <1 mJ / pulse laser light quality: TEM 00 Polarization characteristics: Linearly polarized light (C) Condensation lens Transmittance with respect to wavelength of laser beam: 60% (D) Moving speed of mounting table on which workpiece is mounted: 10
0mm / second The laser beam quality is TEM 00 Is a highly condensing
This means that light can be collected up to the wavelength of the light. FIG. 7 is a graph showing the results of the above experiment.
The The horizontal axis is the peak power density, and the laser beam is pulsed
Since it is a laser beam, the electric field strength is expressed by the peak power density.
The The vertical axis shows the inside of the workpiece by one pulse of laser light.
Of cracks (crack spots) formed in
It shows. Crack spots gather and crack area
It becomes an area. The size of the crack spot
The size of the part of the shape of the
The The data indicated by black circles in the graph is the condenser lens (C)
When the magnification is 100 times and the numerical aperture (NA) is 0.80
is there. On the other hand, the data indicated by white circles in the graph is the condensing lens.
(C) magnification is 50 times and numerical aperture (NA) is 0.55
Is the case. Peak power density is 10 11 (W / cm 2 )
Crack spots are generated inside the workpiece from the degree
As the peak power density increases, the crack spot
It can be seen that the size is also increased. Next, in the laser processing according to this embodiment,
The mechanism of cutting the workpiece by forming the crack region
Is described with reference to FIGS. As shown in FIG.
As shown in FIG.
The focusing point P is aligned with the part and the laser beam L is irradiated onto the workpiece 1
Shoot the crack area 9 along the cutting line
Form. The crack region 9 has one or more cracks
It is an area to include. As shown in FIG.
As a point, cracks grow further, as shown in FIG.
The crack reaches the front surface 3 and the back surface 21 of the workpiece 1,
As shown in FIG.
The work object 1 is cut. To the front and back of the workpiece
Cracks that reach may grow naturally and
In some cases, the object grows when a force is applied to the object. (2) When the modified region is a melted region, the laser beam is irradiated to the object to be processed (for example, a semiconductor such as silicon).
The focusing point inside the material) and the electric field at the focusing point
Strength 1x10 8 (W / cm 2 ) And the pulse width is 1
Irradiate under the condition of μs or less. As a result,
The part is locally heated by multiphoton absorption. This heating
As a result, a melted region is formed inside the workpiece.
Melting area is the area once melted and re-solidified, molten state
Less of the area in the middle and the area in the state of resolidification from melting
It means at least one of them. In addition, the melt processing area
Means that the region has changed phase or the crystal structure has changed
You can also. Also, the melt processing region is a single crystal structure, amorphous
A structure changes from one structure to another in a polycrystalline structure
It can also be referred to as an area. That is, for example, a single crystal
Region where structure changed to amorphous structure, single crystal structure to many
The region changed to a crystal structure, from a single crystal structure to an amorphous structure
And a region changed to a structure including a polycrystalline structure. Addition
When the workpiece is a silicon single crystal structure,
For example, an amorphous silicon structure. Note that the electric field strength
As a limit value, for example, 1 × 10 12 (W / cm 2 )
The The pulse width is preferably 1 ns to 200 ns, for example. The inventor melts the silicon wafer inside.
It was confirmed by experiment that a treatment region was formed. Experiment
The conditions are as follows. (A) Workpiece: silicon wafer (thickness 350 μm,
(B) Laser light source: semiconductor laser excitation Nd: YAG laser wavelength: 1064 nm Laser light spot cross-sectional area: 3.14 × 10 -8 cm 2 Oscillation form: Q switch pulse repetition frequency: 100 kHz Pulse width: 30 ns Output: 20 μJ / pulse laser light quality: TEM 00 Polarization characteristics: Linearly polarized light (C) Condenser lens magnification: 50 times NA: 0.55 Transmittance with respect to laser beam wavelength: 60% (D) Moving speed of mounting table on which workpiece is placed: 10
0 mm / sec. FIG. 12 is cut by laser processing under the above conditions.
A photograph of a cross section of a part of a cut silicon wafer is displayed.
FIG. Melting process area inside silicon wafer 11
A region 13 is formed. It is formed under the above conditions
The size of the melt-processed area in the thickness direction is about 100 μm
It is. Melting region 13 is formed by multiphoton absorption.
Explain what was done. FIG. 13 shows the wavelength of the laser light and the wavelength.
It is a graph which shows the relationship with the transmittance | permeability inside a recon board.
The However, each of the front side and back side of the silicon substrate
The reflection component is removed, and only the transmittance inside is shown. Shi
Recon substrate thickness t is 50μm, 100μm, 200μ
m, 500 μm, 1000 μm
showed that. For example, the wavelength of the Nd: YAG laser.
At 1064 nm, the thickness of the silicon substrate is 500 μm.
In the case of m or less, the laser beam is 80 inside the silicon substrate.
It can be seen that more than% is transmitted. Silicon silicon shown in FIG.
Since the thickness of the wafer 11 is 350 μm, it absorbs multiphotons.
The melt processing area is near the center of the silicon wafer,
It is formed at a portion of 175 μm from the surface. In this case
The excess ratio refers to a silicon wafer with a thickness of 200 μm.
Since it is 90% or more, the laser beam is emitted from the silicon wafer 11
Is absorbed in the interior of the glass, and most of it is transmitted
The This is because the laser beam inside the silicon wafer 11
Is absorbed, and the melt processing region is within the silicon wafer 11.
Formed in the part (that is, melt processing by normal heating with laser light)
Area is not formed), but the melt processing area is multi-light
It means that it was formed by child absorption. For multiphoton absorption
For example, the formation of the melt processing area is
Lecture Summary Vol. 66 (April 2000), pages 72-7
“Processing characteristics of silicon by picosecond pulse laser” on page 3
It is described in “Evaluation”. Note that the silicon wafer has a melting region.
A crack is generated in the cross-sectional direction as the starting point,
As this reaches the front and back surfaces of the silicon wafer,
As a result. Front and back of silicon wafer
The cracks that reach the
It may grow when force is applied to the work object.
The It should be noted that the front and back of the silicon wafer from the melt processing area
The cracks grow naturally on the surface, once melted and resolidified
If a crack grows from the state of the state,
When cracks grow from the region and when they resolidify from melting
At least any of the cases where cracks grow from the state area
One of them. In either case, the cut surface after cutting is shown in FIG.
As shown in FIG. 2, a melt processing region is formed only inside.
Cleavage when forming a melt treatment area inside the workpiece
Unnecessary cracks that are off the planned cutting line
Therefore, the cleaving control becomes easy. (3) When the modified region is a refractive index changing region, the laser beam is focused on the inside of the workpiece (eg glass).
And the electric field strength at the condensing point is 1 × 10 8 (W
/ Cm 2 ) And the pulse width is 1ns or less.
Shoot. Process multiphoton absorption with extremely short pulse width
When it is raised inside the object, it can be energized by multiphoton absorption.
The ghee is not converted into thermal energy, but inside the workpiece
Is a permanent structure such as ionic valence change, crystallization or polarization orientation.
A structural change is induced to form a refractive index changing region. electric field
As an upper limit of intensity, for example, 1 × 10 12 (W / c
m 2 ). For example, the pulse width is preferably 1ns or less.
1 ps or less is more preferable. Bending due to multiphoton absorption
For example, the 42th laser thermal processing is used to form the bending rate changing region.
Research paper collection (November 1997), pages 105-
Page 111 “Femtosecond laser irradiation inside glass
Photo-induced structure formation on ". Next, a specific example of this embodiment will be described. [First Example] A laser according to a first example of this embodiment.
The machining method will be described. Figure 14 used for this method
FIG. Leh
The machining apparatus 100 is a laser light source that generates laser light L.
101 for adjusting the output of laser beam L, pulse width, etc.
Laser light source control unit 10 for controlling laser light source 101
2 and a laser beam L having a function of reflecting the laser beam L
Dichroic arranged to change the direction of the axis by 90 °
Reflected by mirror 103 and dichroic mirror 103
A condensing lens 105 for condensing the laser beam L,
The laser beam L condensed by the light lens 105 is irradiated.
A mounting table 107 on which the workpiece 1 is mounted and a mounting table 10
X-axis stage 109 for moving 7 in the X-axis direction
And the mounting table 107 is moved in the Y-axis direction orthogonal to the X-axis direction.
X-axis stage 111 and mounting table 107 for
For moving in the Z-axis direction perpendicular to the axis and the Y-axis direction
Z-axis stage 113 and these three stages 109,
Stage control unit 115 for controlling the movement of 111 and 113
And comprising. The Z-axis direction is orthogonal to the surface 3 of the workpiece 1
Direction of the laser beam L incident on the workpiece 1.
Point depth direction. Therefore, set the Z-axis stage 113 to Z
By moving in the axial direction, inside the workpiece 1
The condensing point P of the laser beam L can be matched. Also,
The movement of the condensing point P in the X (Y) axis direction is the workpiece 1
X (Y) by X (Y) axis stage 109 (111)
This is done by moving in the axial direction. X (Y) axis stay
109 (111) is an example of the moving means. The laser light source 101 generates pulsed laser light.
Nd: YAG laser. For laser light source 101
Other lasers that can be used are Nd: YVO
Four Laser, Nd: YLF laser or titanium sapphire laser
There is. A place to form a crack region or a melt processing region
Nd: YAG laser, Nd: YVO Four Laser, N
It is preferable to use a d: YLF laser. Refractive index change
Use titanium sapphire laser to form regions
Is preferred. In the first example, the pulse level is used for machining the workpiece 1.
-Ther light is used, but it can cause multiphoton absorption
If possible, continuous wave laser light may be used. In the present invention,
The laser beam includes a laser beam. For condensing
The lens 105 is an example of a light collecting unit. Z-axis stage 1
13 adjusts the condensing point of the laser beam to the inside of the workpiece.
It is an example of a means. Move the condensing lens 105 in the Z-axis direction
The focusing point of the laser beam can also be processed by moving
Can be adjusted to the inside of the object. The laser processing apparatus 100 further includes a mounting table 1.
Illuminate the workpiece 1 placed on 07 with visible light
An observation light source 117 that generates visible light and a die
Same as Croix mirror 103 and condensing lens 105
Visible light beam splitter 119 arranged on the optical axis
And comprising. Beam splitter 119 and condensing lens
Dichroic mirror 103 is arranged between
ing. Beam splitter 119 is about half of visible light
And has the function of reflecting the other half and visible light
Are arranged so as to change the direction of the optical axis by 90 °. View
Visible light generated from the observation light source 117 is beam splitted.
About half of the reflected light is reflected by the reflected light ray 119.
The dichroic mirror 103 and the condensing lens 105
That includes the scheduled cutting line 5 of the workpiece 1
Illuminate surface 3. The laser processing apparatus 100 further includes beam beams.
Plitter 119, dichroic mirror 103 and light collecting
Imaging device 12 disposed on the same optical axis as lens 105
1 and an imaging lens 123. As the image sensor 121
For example, a CCD (charge-coupled d)
device) There is a camera. Includes cutting line 5 etc.
The reflected light of the visible light illuminating the surface 3 is the condensing lens 1.
05, dichroic mirror 103, beam splitter
119 passes through and is imaged by the imaging lens 123 and is imaged.
Images are taken by the child 121 and become imaging data. The laser processing apparatus 100 further includes an image sensor.
Imaging data to which the imaging data output from 121 is input
Control unit 125 and the entire laser processing apparatus 100.
A general control unit 127 and a monitor 129. Shoot
The image data processing unit 125 is used for observation based on the imaging data.
The visible light generated by the light source 117 is focused on the surface 3.
The focus data for calculating is calculated. Based on this focus data
The stage control unit 115 moves the Z-axis stage 113.
By controlling, the visible light is focused on the surface 3
To. Therefore, the imaging data processing unit 125
It functions as a digital unit. In addition, imaging data processing
The unit 125 is an enlarged image of the surface 3 based on the imaging data
The image data is calculated. This image data is stored in the overall control unit.
127, and various processes are performed by the overall control unit.
129. This expands to the monitor 129
Images etc. are displayed. The overall controller 127 includes a stage controller 1
15 and image from the imaging data processing unit 125
Data etc. are input, and laser light is also based on these data.
Source control unit 102, observation light source 117, and stage control unit
115 to control the entire laser processing apparatus 100.
Control the body. Therefore, the overall control unit 127 is a computer.
Function as a data unit. Next, referring to FIG. 14 and FIG.
A laser processing method according to the first example of the embodiment will be described. FIG.
Is a flow chart for explaining this laser processing method.
Is. The workpiece 1 is a silicon wafer. First, the light absorption characteristics of the workpiece 1 are illustrated.
Measure with a spectrophotometer. Based on this measurement result
A wavelength transparent to the workpiece 1 or little absorption
Select a laser light source 101 that generates a laser beam L with a long wavelength.
(S101). Next, the thickness of the workpiece 1 is measured.
The Based on the thickness measurement result and the refractive index of the workpiece 1
Thus, the amount of movement of the workpiece 1 in the Z-axis direction is determined (S1
03). This is because the condensing point P of the laser beam L is the workpiece 1
Is positioned on the surface 3 of the workpiece 1
Of the processing object 1 on the basis of the condensing point of the laser beam L to be placed
This is the amount of movement in the Z-axis direction. This movement amount is designated as the overall control unit 12.
7 is input. The object 1 to be processed is mounted on the laser processing apparatus 100.
It is mounted on the mounting table 107. From the observation light source 117
Visible light is generated to illuminate the workpiece 1 (S10)
5). Work object 1 including illuminated cutting line 5
The surface 3 is imaged by the image sensor 121. This imaging device
The data is sent to the imaging data processing unit 125. This imaging device
On the basis of the data, the imaging data processing unit 125 uses the observation light source 1.
Focus data such that 17 visible light focuses on the surface 3
(S107). This focus data is sent to the stage controller 115.
Sent. The stage controller 115 uses the focus data
Based on this, the Z-axis stage 113 is moved in the Z-axis direction.
(S109). Thereby, the visible light of the observation light source 117 is displayed.
Are located on the surface 3. The imaging data processing unit 1
25 includes the planned cutting line 5 based on the imaging data.
The enlarged image data of the surface 3 of the workpiece 1 is calculated. This
The enlarged image data of the monitor 1 is sent to the monitor 1 via the overall control unit 127.
29, and this causes the monitor 129 to
An enlarged image near the screen 5 is displayed. The overall control unit 127 is previously provided with step S10.
The movement amount data determined in step 3 has been entered.
The movement amount data is sent to the stage control unit 115. Stay
On the basis of this movement amount data, the control unit 115
At a position where the condensing point P of the light L is inside the workpiece 1, Z
The workpiece 1 is moved in the Z-axis direction by the axis stage 113.
(S111). Next, the laser light L is emitted from the laser light source 101.
The laser beam L is generated and the surface 3 of the workpiece 1 is cut.
Irradiate the planned line 5. The condensing point P of the laser beam L is processed.
Since it is located inside the object 1,
It is formed only inside the work object 1. And cutting schedule
X-axis stage 109 and Y-axis stay along line 5
The line 111 is moved to cut the melt processing area.
5 is formed inside the workpiece 1 so as to be along 5 (S11).
3). Then, the workpiece 1 is cut along the planned cutting line 5
The workpiece 1 is cut by bending it (S11).
5). As a result, the workpiece 1 is divided into silicon chips.
Divide. The effect of the first example will be described. According to this,
Inside the workpiece 1 under conditions that cause multiphoton absorption
And the focused laser beam P is aligned with the laser beam L.
Irradiating in-5. And X-axis stage 109 and
By moving the Y-axis stage 111, the condensing point P
Is moved along the planned cutting line 5. This
Modified region (for example, crack region, melt processing region, bending)
(Folding rate change area) along the planned cutting line 5
It is formed inside the figurine 1. Parts to be machined
If there is any starting point, the workpiece is relatively small
Can be divided by force and cut. Therefore, the reforming area
Divide the workpiece 1 along the planned cutting line 5 as the starting point.
The workpiece 1 is cut with a relatively small force.
Can. Thereby, on the surface 3 of the workpiece 1
Unnecessary cracks coming off the planned cutting line 5 are generated.
The processing object 1 can be cut without any problems. Further, according to the first example, there are many processing objects 1.
Under conditions that cause photon absorption and inside the workpiece 1
The focused laser beam P is aligned and the laser beam L scheduled to be cut
5 is irradiated. Therefore, the pulse laser beam L is processed.
It passes through the object 1, and the pulse level is detected on the surface 3 of the object 1.
-Because the light L is hardly absorbed, the formation of the modified region
For this reason, the surface 3 is not damaged such as melting. As described above, according to the first example, machining is performed.
Unnecessary of being off the planned cutting line 5 on the surface 3 of the object 1
The workpiece 1 without cutting or melting
Can. Therefore, the workpiece 1 is, for example, a semiconductor
In the case of a wafer, the semiconductor chip is off the cutting line.
Semiconductor chips without unnecessary cracking or melting
Can be cut from the semiconductor wafer. Electrode on the surface
The workpiece on which the pattern is formed and the piezoelectric element wafer
Like glass substrates on which display devices such as C and liquid crystal are formed
For workpieces with electronic devices formed on the surface
But the same is true. Thus, according to the first example, the object to be processed
Products manufactured by cutting
, Piezoelectric device chips, liquid crystal display devices)
Marriage can be improved. Also, according to the first example, the table of the workpiece 1 is shown.
Since the planned cutting line 5 of the surface 3 does not melt,
Width of the inner 5 (this width is, for example, in the case of a semiconductor wafer, half
This is the distance between the regions that become the conductor chips. Small)
Yes. Thereby, it is produced from one piece of processing object 1.
Increase the number of products and improve product productivity
The According to the first example, the workpiece 1 is cut.
Since laser light is used for cutting,
More complicated processing than the dicing used is possible. example
For example, as shown in FIG.
Even so, according to the first example, cutting is possible. This
These effects are the same in the examples described later. It should be noted that the number of laser light sources is not limited to one but may be plural
Good. For example, FIG.
The schematic diagram explaining the laser processing method which concerns on the 1st example of embodiment
It is. This is because the three laser light sources 15, 17, 19
Three laser beams emitted from the laser beam are collected inside the workpiece 1
Irradiating from different directions together with the light spot P. laser
Each laser beam from the light sources 15 and 17 is the surface of the workpiece 1.
3 is incident. Laser light from the laser light source 19 is processed
Incident from the back surface 3 of the object 1. According to this, multiple records
Because laser light source is used, laser light is different from pulsed laser light.
Even if it is a continuous wave laser beam with low power, the focal point
The electric field strength of the photon can be made large enough to cause multiphoton absorption.
It becomes possible. Even if there is no condensing lens for the same reason
Multiphoton absorption can be generated. In addition, this
In the example, the condensing point is obtained by three laser light sources 15, 17, and 19.
P is formed, but the present invention is not limited to this.
A plurality of light sources may be used. FIG. 18 shows the present embodiment in which a plurality of laser light sources are used.
Schematic explaining another laser processing method according to the first example of the embodiment
FIG. In this example, a plurality of laser light sources 23 are scheduled to be cut.
Three array light sources arranged in a line along line 5
25, 27, 29. Array light source unit 25, 2
7 and 29, laser light sources arranged in the same row
The laser beam emitted from 23 is a single condensing point (for example, a collecting point).
Light spot P 1 ). According to this example, the planned cutting line
A plurality of condensing points P along 5 1 , P 2 , ... are formed simultaneously
Can improve the processing speed.
Yes. In this example, the surface 3 is a cutting target
Modification by laser scanning in the direction perpendicular to in-5
It is also possible to form a plurality of regions simultaneously. [Second Example] Next, a second example of this embodiment will be described.
And explain. This example shows a method and a cutting method for a light transmissive material.
Cutting device. A light transmissive material is an example of a workpiece.
The In this example, LiTaO is used as the light transmissive material. Three From
A piezoelectric element wafer (substrate) with a thickness of about 400 μm
Used. The cutting apparatus according to the second example has the label shown in FIG.
-From the machine 100 and the apparatus shown in FIGS.
Composed. The apparatus shown in FIGS. 19 and 20 will be described.
To do. The piezoelectric element wafer 31 is a wafer as a holding means.
It is held by a sheet (film) 33. This wafer
The sheet 33 has a surface on the side holding the piezoelectric element wafer 31.
It consists of adhesive tape and has elasticity.
Yes. Wafer sheet 33 is sandwiched between sample holders 35
And is set on the mounting table 107. Piezoelectric element
As shown in FIG. 19, the sub-wafer 31 is cut later.
Contains a number of separated piezoelectric device chips 37
The Each piezoelectric device chip 37 has a circuit portion 39.
The The circuit unit 39 is provided on the surface of the piezoelectric element wafer 31.
It is formed for each piezoelectric device chip 37 and is adjacent.
A predetermined gap α (about 80 μm) is formed between the circuit portions 39.
It is made. 20 shows the piezoelectric element wafer 31.
A small crack region 9 is formed as a modified part only inside.
It shows the state that was done. Next, based on FIG. 21, the light according to the second example.
A method for cutting the permeable material will be described. First, cut vs.
A light-transmitting material to be an elephant material (in the second example, LiT
aO Three Measurement of light absorption characteristics of piezoelectric element wafer 31)
(S201). For light absorption characteristics, use a spectrophotometer, etc.
Can be measured. Light absorption characteristics are measured
Then, based on the measurement result,
The laser light L having a wavelength that is transparent or has little absorption is emitted.
The laser light source 101 is selected (S203). In the second example
In this case, a pulse wave having a fundamental wavelength of 1064 nm (P
A W) type YAG laser has been selected. This YAG
The user has a pulse repetition frequency of 20 Hz and
The pulse width is 300μJ with a pulse width of 6ns.
is there. Further, the laser beam L emitted from the YAG laser
The spot diameter is about 20 μm. Next, the thickness of the material to be cut is measured (S
205). Once the thickness of the material to be cut is measured,
Based on the fixed result, the condensing point of the laser beam L is the material to be cut
In the direction of the optical axis of the laser beam L
From the surface of the material to be cut (incident surface of the laser beam L)
The amount of displacement (movement amount) of the condensing point of the laser beam L is determined (S2
07). The amount of displacement (movement amount) of the condensing point of the laser beam L is set to off.
Corresponding to the thickness and refractive index of the material to be cut, for example, cutting
The amount is set to 1/2 the thickness of the target material. As shown in FIG. 22, the actual laser beam
The position of the condensing point P of L is the atmosphere of the material to be cut (for example,
Difference between the refractive index in air) and the refractive index of the material to be cut
Thus, the laser beam L condensed by the condenser lens 105 is
Material to be cut (piezoelectric element wafer 3) than the position of the condensing point Q
It comes to be located deep from the surface of 1). sand
That is, in the air, “Z-axis in the optical axis direction of the laser beam L
Amount of movement of stage 113 x refractive index of material to be cut = actual
The relationship of “the amount of movement of the condensing point of the laser beam L” holds.
It becomes. The displacement amount (movement amount) of the condensing point of the laser beam L is
Considering the relationship described above (thickness and refractive index of the material to be cut)
Is set. After that, the XYZ axis stage (actual
In the embodiment, the X-axis stage 109 and the Y-axis stage
111 and Z-axis stage 113)
It is held on the wafer sheet 33 with respect to the placed mounting table 107.
The held material to be cut is placed (S209). Cutting vs
After placing the elephant material, light is emitted from the observation light source 117.
The material to be cut is irradiated with the emitted light. And
Based on the imaging result of the imaging device 121, the laser beam
Z so that the focal point of L is located on the surface of the material to be cut
Move axis stage 113 to adjust focus
(S211). Here, it is obtained by the observation light source 117.
A surface observation image of the piezoelectric element wafer 31 to be obtained is taken as an image sensor 12.
1, and the imaging data processing unit 125
The light emitted from the observation light source 117 is cut based on
Z-axis stage 11 so as to focus on the surface of the target material
3 is determined and output to the stage controller 115.
The The stage control unit 115 includes an imaging data processing unit 125.
Movement of the Z-axis stage 113 based on the output signal from
The light emitted from the observation light source 117 is to be cut.
Focusing on the surface of the material, that is, focusing of the laser beam L
This is the position to place the point on the surface of the material to be cut.
Thus, the Z-axis stage 113 is controlled. The light emitted from the observation light source 117
When the focus adjustment is completed, the condensing point of the laser beam L is to be cut.
Move to the focal point corresponding to the thickness and refractive index of the material
(S213). Here, the thickness and refraction of the material to be cut
The amount of displacement of the condensing point of the laser beam L determined corresponding to the rate
Only the Z-axis stage 113 is moved in the optical axis direction of the laser beam L
The overall control unit 127 is configured so that the stage control unit 11
The stage controller that sent the output signal to 5 and received the output signal
115 controls the movement position of the Z-axis stage 113. Up
As described above, it corresponds to the thickness and refractive index of the material to be cut.
The Z-axis scan is equivalent to the amount of displacement of the condensing point of the laser beam L determined by
The stage 113 is moved in the optical axis direction of the laser beam L.
As a result, the condensing point of the laser beam L is introduced into the material to be cut.
The arrangement is completed (S215). Inside the material to be cut at the condensing point of the laser beam L
When the placement of the laser beam L is completed, the laser beam L is applied to the material to be cut.
And the X-axis scan according to the desired cutting pattern.
The stage 109 and the Y-axis stage 111 are moved (S
217). Laser light L emitted from the laser light source 101
As shown in FIG.
A predetermined gap α formed between adjacent circuit portions 39.
Piezoelectric element wafer 3 facing (80 μm as described above)
1 is condensed so that the condensing point P is located inside the 1. Above
The desired cutting pattern is duplicated from the piezoelectric element wafer 31.
In order to separate a number of piezoelectric device chips 37
Laser light L is irradiated to the gap formed between the circuit portions 39
The irradiation state of the laser beam L is set to
The laser beam L can be irradiated while checking with the monitor 129.
It becomes. Here, the laser irradiated to the material to be cut
The light L is shown in FIG.
As shown, the surface of the piezoelectric element wafer 31 (the laser beam L is incident
The laser beam L is irradiated to the circuit portion 39 formed on the surface to be
It is collected at an angle that cannot be. In this way, the circuit unit 39 is
-Condensing the laser beam L at an angle where the laser beam L is not irradiated
Prevents the laser light L from entering the circuit unit 39.
Protecting the circuit unit 39 from the laser beam L
Can do. Laser light emitted from the laser light source 101
L, the condensing point P is located inside the piezoelectric element wafer 31.
And condensing the laser beam L at the condensing point P.
Energy density is the optical damage or optical of the material to be cut
As the material to be cut if the threshold value of electrical breakdown is exceeded
Condensing Point P in the Piezoelectric Element Wafer 31 and Its
A minute crack region 9 is formed only in the vicinity. This
The surface and back of the material to be cut (piezoelectric element wafer 31)
There is no damage to the surface. Next, based on FIGS.
About the point where the condensing point of the light L is moved to form a crack
I will explain. Cutting target having a substantially rectangular parallelepiped shape shown in FIG.
The material to be cut 32 relative to the material 32 (light transmissive material)
So that the condensing point of the laser beam L is located inside
Illustrated in FIGS. 24 and 25 by irradiating L
Thus, the condensing point and the inside of the material 32 to be cut
A minute crack region 9 is formed only in the vicinity of. Ma
Further, the condensing point of the laser beam L intersects the optical axis of the laser beam L.
In order to move in the longitudinal direction D of the material 32 to be cut,
The scanning of the light L or the movement of the material to be cut 32 is controlled.
It is. Laser light L is emitted from the laser light source 101.
The laser beam L is
When the material 32 to be cut is moved, the crack region 9
As shown in FIG. 25, the length of the material 32 to be cut
Scanning speed of laser beam L along direction D or cutting target
A plurality of clubs having an interval corresponding to the moving speed of the material 32.
The lock region 9 is formed. Laser light L
Decrease the scanning speed or the moving speed of the material 32 to be cut
As shown in FIG.
The number of crack regions 9 formed by shortening the interval between 9
It is also possible to increase. Also, the scanning speed of the laser beam L
Or further slow down the moving speed of the material to be cut
Thus, as shown in FIG. 27, the crack region 9 is
Scanning direction of the laser beam L or movement of the material 32 to be cut
Direction, that is, along the moving direction of the condensing point of the laser beam L
It will be formed continuously. Between crack areas 9
Adjustment of the gap (number of crack regions 9 to be formed)
The repetition frequency of the light L and the material to be cut 32 (X-axis step)
Page or Y axis stage)
It is also possible to achieve this. In addition, the repetition of the laser beam L
Increase the return frequency and the moving speed of the material 32 to be cut
Thus, throughput can be improved. According to the desired cutting pattern described above, the
When the lock region 9 is formed (S219), the physical external force mark
In the material to be cut, especially cracks
Stress is generated in the portion where the region 9 is formed, and the object to be cut
Cushions formed only inside the material (condensing point and its vicinity)
The rack region 9 is grown and the material to be cut is cracked.
Cutting is performed at the position where the region 9 is formed (S221). Next, referring to FIG. 28 to FIG.
The cutting of the material to be cut by applying an external force will be described.
First, a crack region 9 is formed along a desired cutting pattern.
The material to be cut (piezoelectric element wafer 31) is made of
Held by the wafer sheet 33 held between the pull holders 35
Placed in the cutting device in the state of The cutting device will be described later.
Suction chuck 34, and the suction chuck 34
Continued suction pump (not shown), pressurizing needle 36
(Pressing member), additional force for moving the pressurizing needle 36
It has a pressure needle drive means (not shown). Pressurization
The needle drive means can be an electric or hydraulic actuator.
Eta can be used. 28 to 32.
In this case, the circuit unit 39 is not shown. The piezoelectric element wafer 31 is arranged in a cutting device.
Then, as shown in FIG. 28, the separated piezoelectric device
The suction chuck 34 is brought close to the position corresponding to the chip 37.
To go. Piezoelectric device chip separating the suction chuck 34
Suction pump device in the state of being close to or in contact with the pump 37
Is activated, as shown in FIG.
Piezoelectric device chip 37 (pressure) separated into the pull chuck 34
The electronic element wafer 31) is adsorbed. To suction chuck 34
Piezoelectric device chip 37 to be separated (piezoelectric element wafer 3
When 1) is adsorbed, as shown in FIG. 30, the wafer
The back surface of the sheet 33 (the surface on which the piezoelectric element wafer 31 is held)
Corresponds to the piezoelectric device chip 37 separated from the back side)
The pressurizing needle 36 is moved to the position to be moved. The pressure needle 36 is behind the wafer sheet 33.
The pressure needle 36 is further moved after contacting the surface.
And the wafer sheet 33 is deformed and the pressure needle 3
6 to apply stress to the piezoelectric element wafer 31 from the outside.
Stress on the wafer portion where the crack region 9 is formed.
Occurs and the crack region 9 grows. Crack area 9
Growing up to the front and back surfaces of the piezoelectric element wafer 31
Thus, the piezoelectric element wafer 31 is as shown in FIG.
At the end of the piezoelectric device chip 37 to be separated.
The piezoelectric device chip 37 is disconnected from the piezoelectric element wafer 3 by cutting.
1 will be separated. Wafer sheet 33
Since it has adhesiveness as described above, it is cut and separated
To prevent scattered piezoelectric device chip 37 from scattering
Can do. The piezoelectric device chip 37 is a piezoelectric element wafer.
When separated from 31, suction chuck 34 and pressure need
The robot 36 is moved away from the wafer sheet 33.
The The suction chuck 34 and the pressure needle 36 move.
The separated piezoelectric device chip 37 is a suction chuck.
34, as shown in FIG.
This is separated from the wafer sheet 33. At this time,
Using an ion air blower not shown, ion air
Is sent in the direction of arrow B in FIG.
Piezoelectric device chip 37 adsorbed on
Piezoelectric element wafer 31 held on the sheet 33 (table
Surface) and ion air cleaning. Ion air
-Instead of cleaning, a suction device is provided to suck dust etc.
Piezoelectric device chip 37 and piezoelectric
The element wafer 31 may be cleaned. Environmental change
As a method of cutting the material to be cut by
For the material to be cut in which the crack region 9 is formed
There are ways to give temperature changes. Thus, cutting vs.
By applying temperature changes to the elephant material, cracks
Causing thermal stress in the material part where the region 9 is formed.
To grow the crack region 9 and cut the material to be cut.
Can. As described above, in the second example, the condensing laser is used.
The laser beam emitted from the laser light source 101 is
-The light L is focused on a light transmitting material (piezoelectric element web).
Condensing light by condensing it so that it is located inside c)
The energy density of the laser beam L at the point is a light transmissive material
Exceeds optical damage or optical breakdown threshold
Of the condensing point in the light transmissive material and its vicinity.
Only a minute crack region 9 is formed. And formation
The light transmissive material is cut at the position of the cracked area 9 formed.
As a result, the amount of generated dust is extremely low, dicing scratches, and chipping.
Or cracks on the material surface may occur
Is also extremely low. The light transmissive material is a light transmissive material.
Formed by optical damage or dielectric breakdown
The direction of cutting because it is cut along the cracked area 9
Stability is improved and cutting direction can be controlled easily.
Yes. Compared to dicing with diamond cutters
Dicing width can be reduced, and one light
Increase the number of light transmissive materials cut from the transmissive material.
Is possible. As a result, according to the second example,
Easily and properly cut the light transmissive material
The Also, due to physical external force application or environmental changes, etc.
By forming stress in the material to be cut
The cracked region 9 is grown to form a light transmissive material (piezoelectric
Since the element wafer 31) is cut, the formed cracks
The light transmissive material can be reliably cut at the position of the region 9
it can. Further, the light transmission property is obtained by using the pressurizing needle 36.
By applying stress to the material (piezoelectric wafer 31)
The crack region 9 is grown to cut the light transmissive material.
Therefore, light transmission is performed at the position of the formed crack region 9.
The transient material can be cut more reliably. In addition, a piezoelectric element having a plurality of circuit portions 39 formed thereon.
The element wafer 31 (light transmissive material) is attached to each piezoelectric device chip.
When cutting and separating each group 37, the condensing lens 105
, Facing the gap formed between adjacent circuit portions 39.
The laser beam L so that the focal point is located inside the
Condensation and formation of crack region 9
At the position of the gap formed between the path portions 39, the piezoelectric element
The child wafer 31 can be cut reliably. Further, a light transmitting material (piezoelectric element wafer 3)
1) Move or scan the laser beam L to focus the focal point.
In a direction crossing the optical axis of the light L, for example, in a direction orthogonal
By moving, the crack area 9 moves the focal point
Will be formed continuously along the direction, cutting
The direction stability is further improved, and the cutting direction control is further improved.
Layers can be done easily. In the second example, the dust generation powder is almost
Because there is not much, there is no lubrication washing water to prevent scattering of dust generation powder
It becomes unnecessary and realizes a dry process in the cutting process.
be able to. In the second example, the reforming section (crack
The formation of the center region 9) is achieved by non-contact processing with the laser beam L.
For dicing with diamond cutter
Problems such as blade durability and replacement frequency
Is not. In the second example, as described above,
Formation of the modified portion (crack region 9) is not caused by the laser beam L.
Because it is realized by contact processing, the light transmissive material is completely cut.
Cutting pattern that cuts light transmissive material without cutting
It is possible to cut the light transmissive material along the line.
The present invention is not limited to the second example described above,
For example, the light transmissive material is limited to the piezoelectric element wafer 31.
It can be a semiconductor wafer, glass substrate, etc.
Yes. The laser light source 101 also absorbs light from the light-transmitting material to be cut.
Appropriate selection can be made according to the yield characteristics. Also in the second example
In this case, the laser beam L is irradiated as a modified portion.
A finer crack region 9 is formed.
However, it is not limited to this. For example, laser light
As the source 101, an ultrashort pulse laser light source (e.g.
Refractive index change by using mutosecond (fs) laser)
(High refractive index) modified part can be formed, this
The crack region 9 is generated using such a change in mechanical properties.
Can cut light transmissive material without
The In the laser machining apparatus 100, Z
By moving the axis stage 113, the laser beam L
Focus adjustment is performed, but it is limited to this.
Without condensing the condensing lens 105, the optical axis direction of the laser light L
To adjust the focus by moving
May be. In the laser processing apparatus 100,
X-axis stage 109 according to the desired cutting pattern and
The Y-axis stage 111 is moved, but this
The laser beam L is not limited to the desired cutting pattern.
You may make it scan according to. Further, the suction chuck 34 has a piezoelectric element wafer.
After adsorbing 31, the piezoelectric element is pressed by the pressure needle 36.
Although the child wafer 31 is cut, the present invention is not limited to this.
The piezoelectric element wafer by the pressurizing needle 36
After cutting 31, the piezoelectric device chip separated by cutting is separated.
The chuck 37 may be attracted to the suction chuck 34.
Yes. The suction chuck 34 sucks the piezoelectric element wafer 31.
After being attached, the piezoelectric element wafer is pressed by the pressure needle 36.
The piezoelectric device is cut and separated by cutting 31
The surface of the tip 37 is covered with the suction chuck 34.
Dust adheres to the surface of the piezoelectric device chip 37.
Can be prevented. Further, the image sensor 121 is for infrared rays.
By using the reflected light of the laser light L
Focus adjustment can be performed. In this case,
Half mirror instead of using ichroic mirror 103
Between this half mirror and the laser light source 101
An optical element that suppresses the return light to the laser light source 101.
It is necessary to arrange a child. At this time, focus
The material to be cut is damaged by the laser beam L for adjustment.
Laser light source during focus adjustment to prevent
The output of the laser beam L irradiated from 101 is a crack type.
It is preferable to set the energy value lower than the output for
Good. The features of the present invention are described below from the viewpoint of the second example.
Light up. The light-transmitting material cutting method according to the present invention includes:
The laser beam emitted from the laser light source
Condensed so that it is located inside the transient material, light transmissive material
A reforming part is formed only at and near the condensing point inside
At the position of the reforming part forming step and the reforming part formed
A cutting step for cutting the light transmissive material.
It is characterized by. In the method for cutting a light transmissive material according to the present invention,
In the modified part forming step, the condensing point of the laser beam is light transmissive.
Focus the laser light so that it is located inside the transient material.
And the light condensing point inside the light transmissive material and its vicinity
Only the reforming part is formed. In the cutting process, formed
The light transmissive material is cut at the position of the modified portion.
Dust generation is extremely low, dicing scratches, chipping
Or the possibility of cracking on the material surface is extremely high.
Become lower. In addition, the light transmissive material is formed in the formed modified portion.
Since the cutting direction is improved, the direction stability of the cutting is improved,
The cutting direction can be easily controlled. Also die
Dicing compared to dicing with a diamond cutter
The width can be reduced and cut from one light transmissive material.
It becomes possible to increase the number of light-transmitting materials cut off.
As a result, according to the present invention, it is extremely easy and appropriate.
The light transmissive material can be cut. Further, the method of cutting the light transmissive material according to the present invention.
In the law, there is almost no dusting powder, so dusting powder
Lubrication cleaning water is not required to prevent splashing and cutting process
Dry process can be realized. Further, the method for cutting the light transmissive material according to the present invention.
In the method, the formation of the modified portion is not contacted by laser light.
Because it is realized by construction, diamonds like conventional technology
The durability of the blade in dicing with a cutter
Problems such as exchange frequency do not occur. Also, in the present invention
In the method for cutting the light transmissive material, as described above.
In addition, the modified part can be formed by non-contact processing using laser light.
Therefore, the light transmissive material does not cut completely, light transmissive
Light transmissive along a cutting pattern that cuts through the material
It is possible to cut the material. The light transmissive material has a plurality of circuit portions.
In the reforming part forming process, the adjacent times
Of the portion of the light transmissive material facing the gap formed between the passages
The laser beam is focused so that the focusing point is located at the
Is preferably formed. When configured in this way
At the position of the gap formed between adjacent circuit parts.
Thus, the light transmissive material can be cut reliably. Further, in the modified part forming step, light transmittance
When the material is irradiated with laser light, the laser light is
It is preferable to focus the laser beam at an angle that is not irradiated.
Yes. Thus, in the modified part forming step, the light transmissive material
When the laser beam is irradiated to the material, the laser beam is irradiated to the circuit section.
By focusing the laser beam at an angle that is not
The light can be prevented from entering the circuit part.
Protection from laser light is possible. Further, in the reforming part forming step, the light condensing point is set.
By moving in the direction crossing the optical axis of the laser beam
The reforming part is continuously formed along the moving direction of the condensing point.
It is preferable. Thus, in the reforming part forming process,
Move the focusing point in a direction that intersects the optical axis of the laser beam.
By doing so, the reforming part is continuously along the moving direction of the condensing point
The direction stability of the cutting is further improved
Thus, the cutting direction can be controlled more easily.
The The light-transmitting material cutting method according to the present invention includes
The laser beam emitted from the laser light source
Condensed so that it is located inside the transient material, light transmissive material
Cracks are formed only at and near the condensing point inside
The crack formation process to be performed and the position of the formed crack
And a cutting step for cutting the light-transmitting material at a position.
It is characterized by that. In the method for cutting a light transmissive material according to the present invention,
In the crack formation process, the focal point of the laser beam is light
Focus the laser light so that it is located inside the transparent material
Therefore, the energy density of the laser beam at the focal point is
Threshold for optical damage or optical breakdown of transparent materials
The light condensing point and the light inside the light transmissive material.
Cracks are formed only in the vicinity of. In the cutting process, the shape
The light transmissive material is cut at the position of the formed crack.
As a result, the amount of dust generation is extremely low, dicing scratches,
Ping or cracks on the material surface may occur
The property is also extremely low. Also, the light transmissive material is light transmissive
Formed by optical damage or optical breakdown of the material
The cutting direction is stable because it is cut along the crack.
And the cutting direction can be easily controlled.
The Compared to dicing with a diamond cutter
Dicing width can be reduced, and one light transmission
Increasing the number of light transmissive materials cut from transient materials
Is possible. As a result, according to the present invention,
The light transmissive material can be cut easily and appropriately. Further, the method of cutting the light transmissive material according to the present invention.
In the law, there is almost no dusting powder, so dusting powder
Lubrication cleaning water is not required to prevent splashing and cutting process
Dry process can be realized. Further, the method of cutting the light transmissive material according to the present invention.
In the method, the formation of cracks is non-contact by laser light.
Because it is realized by processing, the diamond
Blade durability in dicing with a cutter
There will be no problems such as performance and replacement frequency. In addition, this departure
In the light transmissive material cutting method according to the light, the above-mentioned
In this way, cracks are formed by non-contact processing using laser light.
Realized, light does not completely cut the light transmissive material
Light along a cutting pattern that cuts through transparent material
It is possible to cut the permeable material. Also, in the cutting process, the formed
Cutting light transmissive material by growing
And are preferred. Thus, in the cutting process, formed
The light transmissive material is cut by growing cracks
The light transmission at the position of the formed crack.
The transient material can be cut reliably. In the cutting process, a pressing member is used.
By applying stress to the light transmissive material
It is preferable that the light transmissive material is cut by growing the layer.
In this way, in the cutting process, the pressing member is used to transmit light.
Growing cracks by applying stress to the transient material
By cutting the light transmissive material,
It is possible to cut the light-transmitting material more securely with
Yes. The light transmissive material cutting device according to the present invention comprises:
A laser light source, a holding means for holding the light transmissive material, and a laser
-The laser beam emitted from the laser light source
Optical element for condensing light so as to be located inside the transient material
And the condensing point of the laser light inside the light transmissive material and
Light transmissive material at the position of the modified part formed only in the vicinity
And a cutting means for cutting the material.
The In the light transmissive material cutting device according to the present invention,
The optical element makes the condensing point of the laser light a light transmissive material
By focusing the laser light so that it is located inside,
Only at and near the condensing point inside the light transmissive material
A reforming section is formed. And the cutting means is a light transmissive material
Only at the laser beam condensing point and its vicinity inside the material
The light transmissive material is cut at the position of the modified portion to be formed.
Therefore, the light-transmitting material is surely formed along the formed modified portion.
Will be cut, and the amount of dust generation is extremely low.
Scratches, chipping or cracks on the material surface.
The possibility of producing is very low. Also light transmissive material
Is cut along the reforming section, so the cutting direction stability
The cutting direction can be easily controlled.
In addition, compared to dicing with a diamond cutter,
Dicing width can be reduced and one light transmission
It is possible to increase the number of light transmissive materials cut from the material
It becomes ability. As a result, according to the present invention, it is extremely easy.
In addition, the light transmissive material can be appropriately cut. Further, the optically transparent material cutting device according to the present invention is provided.
Since there is almost no dust generating powder in the installation, the dust generating powder
Lubrication cleaning water is not required to prevent splashing and cutting process
Dry process can be realized. Further, the light transmissive material cutting device according to the present invention is also provided.
In the non-contact processing with laser light
Because it is formed, the diamond cutter
Blade durability and frequent replacement during dicing
There will be no problems such as degree. Further, the light according to the present invention
In the permeable material cutting device, it is modified as described above.
Because the part is formed by non-contact processing with laser light,
Cut out light transmissive material that does not cut the transmissive material completely
Cut the light transmissive material along the cutting pattern
Is possible. The light transmissive material cutting device according to the present invention comprises:
A laser light source, a holding means for holding the light transmissive material, and a laser
-The laser beam emitted from the laser light source
Optical element for condensing light so as to be located inside the transient material
And the condensing point of the laser light inside the light transmissive material and
Light is transmitted by growing cracks formed only in the vicinity of the crack.
Cutting means for cutting the functional material,
ing. In the light transmissive material cutting device according to the present invention,
The optical element makes the condensing point of the laser light a light transmissive material
By focusing the laser light so that it is located inside,
The energy density of the laser beam at the focal point is a light transmissive material
Exceeds optical damage or dielectric breakdown threshold
Of the condensing point in the light transmissive material and its vicinity.
Cracks are formed only on the surface. Then, the cutting means is light transmissive.
Focusing point of laser beam in the transient material and its vicinity
Only light-transmitting material is grown by growing cracks
Since the light transmissive material is cut, the optical material of the light transmissive material
Cracks formed by damage or optical breakdown
Will be cut securely along the
Low, dicing scratches, chipping or material surface
The possibility of cracks and the like is extremely low. Also,
Since the light transmissive material is cut along the crack,
Cutting direction stability is improved and cutting direction is easily controlled.
be able to. Also, the diamond cutter
The dicing width can be reduced compared to
The number of light transmissive materials cut from one light transmissive material
It becomes possible to increase. As a result, according to the present invention,
Cutting light transmissive material very easily and properly
Can do. In addition, the optically transparent material cutting device according to the present invention is provided.
Since there is almost no dust generating powder in the installation, the dust generating powder
Lubrication cleaning water is not required to prevent splashing and cutting process
Dry process can be realized. Further, the optically transparent material cutting apparatus according to the present invention is provided.
In the case of cracks, cracks can be caused by non-contact processing using laser light.
As in the conventional technology, the diamond cap is
Durability and replacement of blades during dicing by cutter
There is no problem with frequency. Further, according to the present invention
In the light transmissive material cutting device, as described above,
The rack is formed by non-contact processing with laser light
Therefore, a light transmissive material that does not completely cut the light transmissive material
A light transmissive material is applied along the cutting pattern
It is possible to cut. The cutting means applies stress to the light transmissive material.
It is preferable to have a pressing member for applying.
In this way, the cutting means applies stress to the light transmissive material.
By having a pressing member for
Apply cracks to light transmitting materials to grow cracks
At the position of the formed crack
The light transmissive material can be cut even more reliably. The light transmitting material has a plurality of surfaces on its surface.
A light transmissive material having a circuit portion formed thereon, wherein the optical element
Light transmission facing the gap formed between adjacent circuit parts
The laser beam so that the condensing point is located inside the functional material part.
It is preferable to collect light. When configured in this way,
At the position of the gap formed between the circuit parts in contact, the light
The permeable material can be cut reliably. Further, the optical element is irradiated with laser light on the circuit portion.
It is preferable to focus the laser beam at an angle at which it is not irradiated.
In this way, the optical element is not irradiated with laser light on the circuit section.
By focusing the laser beam at a large angle, the laser beam is rotated.
It is possible to prevent the light from entering the road part and
Can be protected from. Further, the condensing point intersects the optical axis of the laser beam.
A focusing point moving means for moving in the direction.
It is preferable. In this way, the condensing point is the light of the laser beam.
Focusing point moving means for moving in the direction intersecting the axis
By providing further, cracks in the moving direction of the condensing point
Can be formed continuously along the direction of cutting
Stability is further improved and cutting direction control is further improved.
It can be done easily. According to the laser processing method of the present invention,
A crack that is not on the surface of the workpiece to be melted or cut
The workpiece can be cut without causing this.
The Therefore, it is produced by cutting the workpiece.
Products (for example, semiconductor chips, piezoelectric device chips,
To improve the yield and productivity of LCDs.
You can. In the conventional example in which laser cutting is performed, the machining pair is
The laser beam is irradiated to the sheet after cutting the object.
Therefore, the sheet may be damaged and may not be useful in the separation process
In contrast to the laser processing method according to the present invention,
For example, it is modified only inside the workpiece by laser irradiation.
Since the area is formed, the workpiece is adhered to the sheet.
In the subsequent separation process
It can be separated into chips while being adhered to the sheet.
In this case, the chips do not fall apart during collection. Snow
That is, the original role of the sheet can be maintained.

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a plan view of an object to be processed during laser processing by the laser processing method according to the present embodiment. 2 is a cross-sectional view taken along line II-II of the workpiece shown in FIG. FIG. 3 is a plan view of an object to be processed after laser processing by the laser processing method according to the present embodiment. 4 is a cross-sectional view taken along line IV-IV of the workpiece shown in FIG. 5 is a cross-sectional view taken along line VV of the workpiece shown in FIG. FIG. 6 is a plan view of a processing object cut by the laser processing method according to the present embodiment. FIG. 7 is a graph showing the relationship between electric field strength and crack size in the laser processing method according to the present embodiment. FIG. 8 is a cross-sectional view of an object to be processed in a first step of the laser processing method according to the present embodiment. FIG. 9 is a cross-sectional view of an object to be processed in a second step of the laser processing method according to the present embodiment. FIG. 10 is a cross-sectional view of an object to be processed in a third step of the laser processing method according to the present embodiment. FIG. 11 is a cross-sectional view of an object to be processed in a fourth step of the laser processing method according to the present embodiment. FIG. 12 is a view showing a photograph of a cross section of a part of a silicon wafer cut by the laser processing method according to the embodiment. FIG. 13 is a graph showing the relationship between the wavelength of laser light and the transmittance inside the silicon substrate in the laser processing method according to the present embodiment. FIG. 14 is a schematic configuration diagram of a laser processing apparatus that can be used in the laser processing method according to the first example of the embodiment; FIG. 15 is a flowchart for explaining a laser processing method according to the first example of the embodiment; FIG. 16 is a plan view of a processing object for explaining a pattern that can be cut by the laser processing method according to the first example of the embodiment; FIG. 17 shows a first embodiment of the present invention relating to a plurality of laser light sources.
It is a schematic diagram explaining the laser processing method which concerns on an example. FIG. 18 shows a first embodiment of the present invention regarding a plurality of laser light sources.
It is a schematic diagram explaining the other laser processing method which concerns on an example. FIG. 19 is a schematic plan view showing a piezoelectric element wafer held on a wafer sheet in a second example of the embodiment. FIG. 20 is a schematic cross-sectional view showing a piezoelectric element wafer held by a wafer sheet in a second example of the embodiment. FIG. 21 is a flowchart for explaining a cutting method according to a second example of the embodiment; FIG. 22 is a cross-sectional view of a light transmissive material irradiated with laser light by a cutting method according to a second example of the present embodiment. FIG. 23 is a plan view of a light transmissive material irradiated with laser light by a cutting method according to a second example of the present embodiment. 24 is a view of the light transmissive material XXIV-XX shown in FIG.
It is sectional drawing which followed the IV line. 25 is a view showing the light transmissive material XXV-XXV shown in FIG.
It is sectional drawing along a line. 26 is a cross-sectional view taken along line XXV-XXV of the light transmissive material shown in FIG. 23 when the moving speed of the condensing point is slowed. 27 is a cross-sectional view of the light transmissive material shown in FIG. 23 taken along line XXV-XXV when the moving speed of the condensing point is further decreased. FIG. 28 is a cross-sectional view of a piezoelectric element wafer and the like showing a first step of a cutting method according to the second example of the embodiment. 29 is a cross-sectional view of a piezoelectric element wafer and the like showing a second step of the cutting method according to the second example of the embodiment. FIG. 30 is a cross-sectional view of a piezoelectric element wafer and the like showing a third step of the cutting method according to the second example of the embodiment. FIG. 31 is a cross-sectional view of a piezoelectric element wafer and the like showing a fourth step in the cutting method according to the second example of the embodiment. FIG. 32 is a cross-sectional view of a piezoelectric element wafer and the like showing a fifth step of the cutting method according to the second example of the embodiment. FIG. [Explanation of Symbols] 1 ... workpiece, 3 ... surface, 5 ... scheduled line, 7 ... modified region, 9 ... crack region, 1
DESCRIPTION OF SYMBOLS 1 ... Silicon wafer, 13 ... Melt processing area, 1
5, 17, 19, 23... Laser light source, 25, 27,
29 ... Array light source unit, 31 ... Piezoelectric element wafer,
37 ... piezoelectric device chip, 100 ... laser processing apparatus, 101 ... laser light source, 105 ... condensing lens, 109 ... X-axis stage, 111 ... Y-axis stage, 113. ..Z axis stage, P ... Focusing point

Front page continuation (51) Int.Cl. 7 Identification symbol FI Theme code (reference) H01L 21/301 B23K 101: 40 // B23K 101: 40 H01L 21/78 B (72) Inventor Naoki Uchiyama Hamamatsu City, Shizuoka Prefecture 1126, Ichinomachi, Hamamatsu Photonics Co., Ltd. (72) Inventor Toshimitsu Wakuda, 1126, Nomachi, Ichimachi, Hamamatsu, Shizuoka Pref. Fterm, Hamamatsu Photonics Co., Ltd. DA10 DB13 4G015 FA06 FB01 FC02

Claims (1)

  1. Claims: 1. A process of fixing an object to be processed on a sheet having adhesiveness on the surface; and a laser beam is applied to the inside of the object to be processed with a converging point, and the process Forming a modified region inside the object to be processed along a line to be cut of the object.
JP2002093060A 2000-09-13 2002-03-28 Laser beam machining method Pending JP2003033887A (en)

Priority Applications (3)

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Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005019962A (en) * 2003-06-06 2005-01-20 Hitachi Chem Co Ltd Adhesive sheet
JP2006294674A (en) * 2005-04-06 2006-10-26 Disco Abrasive Syst Ltd Laser beam machining method and laser beam machining apparatus of wafer
US7387951B2 (en) 2004-03-29 2008-06-17 Nitto Denko Corporation Method of dicing semiconductor wafer into chips, and apparatus using this method
CN100436030C (en) * 2003-10-27 2008-11-26 株式会社迪斯科 Processing method using laser beam
US7564119B2 (en) 2004-02-20 2009-07-21 Nitto Denko Corporation Adhesive sheet for laser dicing and its manufacturing method
JP2011046963A (en) * 2003-06-06 2011-03-10 Hitachi Chem Co Ltd Adhesive sheet
DE102004012012B4 (en) * 2003-03-11 2013-06-13 Disco Corp. Method for dividing a semiconductor wafer
DE112004000768B4 (en) * 2003-05-12 2015-07-23 Tokyo Seimitsu Co., Ltd. Method for separating a plate-like element

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102004012012B4 (en) * 2003-03-11 2013-06-13 Disco Corp. Method for dividing a semiconductor wafer
DE112004000768B4 (en) * 2003-05-12 2015-07-23 Tokyo Seimitsu Co., Ltd. Method for separating a plate-like element
JP2005019962A (en) * 2003-06-06 2005-01-20 Hitachi Chem Co Ltd Adhesive sheet
JP2011046963A (en) * 2003-06-06 2011-03-10 Hitachi Chem Co Ltd Adhesive sheet
CN100436030C (en) * 2003-10-27 2008-11-26 株式会社迪斯科 Processing method using laser beam
US7564119B2 (en) 2004-02-20 2009-07-21 Nitto Denko Corporation Adhesive sheet for laser dicing and its manufacturing method
US7767556B2 (en) 2004-02-20 2010-08-03 Nitto Denko Corporation Adhesive sheet for laser dicing and its manufacturing method
US7387951B2 (en) 2004-03-29 2008-06-17 Nitto Denko Corporation Method of dicing semiconductor wafer into chips, and apparatus using this method
JP2006294674A (en) * 2005-04-06 2006-10-26 Disco Abrasive Syst Ltd Laser beam machining method and laser beam machining apparatus of wafer
JP4684717B2 (en) * 2005-04-06 2011-05-18 株式会社ディスコ Wafer laser processing method and laser processing apparatus

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