JP2003031532A - Semiconductor device manufacturing method and apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To improve bonding strength, and at the same time, to shorten peeling time by adding heating time in an adhesive, and changing automatic peeling conditions, without changing the adhesive of a glass plate and a wafer. SOLUTION: On the surface of a wafer 1, a plurality of P electrodes 2 are formed by mask deposition. First, an adhesive such as FSC is applied onto a glass plate 4. Additionally, an adhesive is applied to the surface of the P electrode 2 of the wafer 1, and is subjected to bake heating by an oven for drying. Although the adhesive is applied to the surface of the P electrode 2 again after cleaning/OAP treatment, the adhesive is not allowed to dry. Then, as shown in Fig. 1 (a), the wafer 1 and a glass plate 4 are pressurized and heated in a vacuum state to establish bonding. After that, the wafer 1 is polished into specific thickness as shown in Fig. 1 (b), and an N electrode 5 is formed by deposition, as shown in Fig. 1 (c). Then, the wafer 1 and a glass substrate 4 are dipped in NMP being heated to 95 deg.C for 90 minutes and are dipped in acetone for approximately 42 hours for dissolving an adhesive 4, and the wafer 1 is peeled off from the glass plate 4, as shown in Fig. 1 (d).

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method and an apparatus for manufacturing a semiconductor wafer produced in a semiconductor device manufacturing process, and more particularly to a glass plate in a semiconductor wafer manufacturing process such as a laser diode. The present invention relates to a semiconductor device manufacturing method for improving peeling work.

[0002]

2. Description of the Related Art Conventionally, in a semiconductor device manufacturing process, a glass plate is used as a base for fixing a wafer for polishing a semiconductor wafer (hereinafter, simply referred to as a wafer) and attaching electrodes. For example, a wafer such as gallium arsenide (GaAs) having one electrode formed in advance is attached to a base of a glass plate, the wafer is polished to a predetermined thickness, and then the other electrode is attached.
And after peeling the glass plate after processing the wafer,
A semiconductor chip is manufactured by cutting the wafer to a predetermined size.

Various techniques relating to the manufacturing process of such a semiconductor device have been reported. For example, JP-A-8-2
In Japanese Patent No. 64490, a resist that does not dissolve in an etching solution is applied to a wafer and then adhered to the glass plate surface, so that the wafer is not peeled from the glass plate surface during a manufacturing process such as selective etching or polishing. Such a technique is disclosed. In addition, JP-A-10-190
In Japanese Patent No. 125, a laser array is laminated with a first adhesive having a melting temperature of 160 ° C. and a second adhesive having a melting temperature of 80 ° C.
This laser array is fixed to the base of the glass plate with the adhesive of No. 1 and the polishing work is performed. After the polishing work, the first
The second adhesive is melted at a melting temperature (that is, 160 ° C. or less) at which the adhesive does not melt, and the laser array is peeled off from the surface of the glass plate. This allows the laser array to be easily peeled from the surface of the glass plate while the layers of the laser array are fixed to each other.

[0004]

However, in the above-described conventional semiconductor device manufacturing process, it takes a considerable amount of time to remove the wafer from the surface of the glass plate after the wafer is polished and electrodes are attached. It depends. For example, when an FSC agent (registered trademark) manufactured by Shipley Far East Co., Ltd. containing a propylene glycol monomethyl acetate solvent-based agent for wafer protection is used as an adhesive agent for adhering a wafer to a glass plate, Since the peeling work is performed only by immersing the glass plate in acetone, it takes about 86 hours to peel the glass plate. In addition, since the drying time of the adhesive is as short as about 90 seconds when heated at 120 ° C. by the hot plate, there is a problem that the adhesive does not dry well and the adhesive strength is weak.

The present invention has been made in view of the above problems, and an object of the present invention is to add an adhesive heating time without changing the adhesive for adhering a wafer to a glass plate from the conventional one. It is an object of the present invention to provide a semiconductor device manufacturing method and a manufacturing apparatus capable of increasing the adhesive strength and shortening the peeling time by changing the automatic peeling condition.

[0006]

In order to achieve the above object, the present invention adheres a semiconductor wafer to a glass plate with an adhesive, processes the semiconductor wafer, and then peels the semiconductor wafer from the glass plate. In the method of manufacturing a semiconductor device, a step of baking and drying the adhesive applied to the semiconductor wafer for the first time, adhering the adhesive applied for the second time to the glass plate in an undried state, and bonding the glass plate. After processing the semiconductor wafer bonded to
The method is characterized by including a step of swelling an adhesive for adhering the glass plate and the semiconductor wafer, and a step of dissolving the adhesive for adhering the glass plate and the semiconductor wafer to separate the semiconductor wafer from the glass plate.

The semiconductor device manufacturing method of the present invention is a semiconductor device manufacturing method in which a semiconductor wafer is adhered to a glass plate with an adhesive, the semiconductor wafer is processed, and then the semiconductor wafer is peeled from the glass plate. The first step of applying and drying the adhesive, the second step of applying the first adhesive to the semiconductor wafer and drying, and the third step of applying the second adhesive to the semiconductor wafer A fourth step of adhering the glass plate and the semiconductor to each other by heating under pressure in a vacuum state and adhering the semiconductor wafer, and after processing the semiconductor wafer, the semiconductor wafer adhered to the glass plate is predetermined in an n-methyl-2pyrrolidone solvent. The fifth step of immersing for a time, and the semiconductor wafer adhered to the glass plate is immersed in acetone for a predetermined time,
A sixth step of melting the adhesive to separate the semiconductor wafer from the glass plate.

In the second step of the method for manufacturing a semiconductor device according to the present invention, the adhesive is heated in an oven at a predetermined temperature for a predetermined time, baked, and dried.

In the third step of the method for manufacturing a semiconductor device according to the present invention, after the completion of the second step, the semiconductor wafer is cleaned and treated with hexamethyldisilazane, and then the second adhesive is applied. Is applied.

In the fifth step of the method for manufacturing a semiconductor device according to the present invention, the n-methyl-2pyrrolidone solvent is heated at a predetermined temperature and is immersed for a predetermined time with stirring. Incidentally, n-methyl-2
It is desirable to heat the pyrrolidone-based solvent to a temperature around the flash point.

In the fifth step of the method for manufacturing a semiconductor device according to the present invention, the n-methyl-2pyrrolidone solvent is immersed in the solvent for a predetermined period of time, followed by heating with alcohol and cleaning with pure water. It is characterized by performing drying.

Further, the adhesive in the method for manufacturing a semiconductor device according to the present invention is characterized in that it is a back coat agent containing a propylene glycol solvent as a main component for protecting a semiconductor wafer.

Further, the present invention is a semiconductor device manufacturing apparatus for adhering a semiconductor wafer to a glass plate with an adhesive, processing the semiconductor wafer, and peeling the semiconductor wafer from the glass plate. A first means for applying and drying the first adhesive, a second means for applying a first adhesive on the semiconductor wafer and drying, and a third means for applying a second adhesive on the semiconductor wafer. A fourth means for adhering the glass plate and the semiconductor to each other by heating under pressure in a vacuum state, and the semiconductor wafer adhered to the glass plate after processing the semiconductor wafer, n-methyl-2
Fifth means of immersing in a pyrrolidone-based solvent for a predetermined time, and immersing the semiconductor wafer adhered to the glass plate in acetone for a predetermined time to dissolve the adhesive to remove the semiconductor wafer from the glass plate. And a sixth means for separating.

The second means of the semiconductor device manufacturing apparatus according to the present invention is characterized in that the adhesive is heated in an oven at a predetermined temperature for a predetermined time, baked, and dried.

Further, in the third means of the semiconductor device manufacturing apparatus according to the present invention, after the semiconductor wafer is cleaned and the hexamethyldisilazane treatment is performed, the second means is used.
It is characterized in that the adhesive is applied a second time.

Further, in the fifth means of the semiconductor device manufacturing apparatus according to the present invention, the n-methyl-2pyrrolidone solvent is heated at a predetermined temperature and immersed for a predetermined time with stirring. .

Further, in the semiconductor device manufacturing apparatus according to the present invention, the predetermined temperature is a temperature about the flash point of the n-methyl-2pyrrolidone solvent.

Further, in the fifth means of the semiconductor device manufacturing apparatus according to the present invention, after n-methyl-2pyrrolidone solvent is immersed for a predetermined time, it is heated and washed with alcohols, washed with pure water and dried. And is performed.

Further, the adhesive in the semiconductor device manufacturing apparatus of the present invention is characterized in that it is a back coat agent containing a propylene glycol solvent as a main component for protecting a semiconductor wafer.

[0020]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A semiconductor device manufacturing method and manufacturing apparatus according to the present invention will be described below with reference to the drawings. In this embodiment, a laser diode manufacturing process will be described as an example. FIG. 1 is a conceptual diagram showing the steps of bonding and peeling a wafer and a glass plate. On the surface of the wafer 1 made of GaAs or the like and having a thickness of about 450 μm, P having a thickness of about several μm (for example, 1 μ) is previously formed by mask vapor deposition or the like.
A large number of electrodes 2 are formed. And FIG.
As shown in (a), the P electrode 2 side of the wafer 1 is turned upside down, the adhesive 3 is applied, and the wafer 1 is bonded to the surface of the glass plate 4 under pressure and heating. As the adhesive 3, for example, an FSC agent manufactured by Shipley Far East Co., Ltd. is used. This FSC agent is a propylene glycol-based solvent mainly used as a back coat agent, containing 60% of propylene glycol monomethyl ether acetate for wafer protection. By sticking the wafer 1 on the surface of the glass plate 4 using such an adhesive 3 and drying it, the wafer 1 is fixed to the surface of the glass plate 4 so that the thin wafer 1 is not broken during the polishing operation. ing. In addition, such an adhesive 3 can be dissolved by acetone. The thickness of the glass plate 4 is about 1
It is about mm.

Then, as shown in FIG. 1 (b), the surface of the wafer 1 fixed to the glass plate 4 is polished with an adhesive 3 to a thickness of about 80 to 120 μm. Further, as shown in FIG. 6C, the position of the electrode facing the P electrode 2 is determined by the recognition pattern transmitted from the glass plate 4 side, and a large number of N electrodes 5 are formed by vapor deposition. That is,
The N electrode 5 is aligned while recognizing the position of the P electrode 2. Therefore, the glass plate 4 has a role of protecting the wafer 1 from being broken and a role of recognizing the pattern of the electrode from the lower surface. The thickness of the N electrode 5 is P
The thickness of the electrode 2 is slightly thicker than about 1 μm.

Further, as shown in FIG. 1D, the wafer 1 is separated from the glass plate 4 by immersing it in acetone for about 42 hours to dissolve the adhesive. At this time, conventionally, it took about 86 hours to peel off the adhesive because acetone was difficult to penetrate between the wafer 1 and the glass plate 4, but in the present invention, the automatic peeling by NMP (n-methyl-2pyrrolidone) was performed. By setting the working conditions, the wafer 1 can be peeled off in about 42 hours only by immersing it in acetone. The details of the automatic peeling work condition by NMP will be described later. Wafer 1 thus generated
Since a groove is formed in advance between each electrode, it is possible to form a chip that is individually divided by pressing the position of each electrode.

First, the structure of the semiconductor device manufacturing apparatus of the present invention will be described. FIG. 2 is a diagram showing an outline of a semiconductor device manufacturing apparatus according to an embodiment of the present invention. Figure 2
In the semiconductor device manufacturing apparatus, the first pretreatment unit 10 that heats and cleans the glass plate 4 and the first pretreatment unit 1 described above.
The wafer processing unit 200 is provided with the first FSC coating unit 20 for coating the FSC on the glass plate 4 dried at 0. On the other hand, the second pretreatment unit 30 for heating and cleaning the wafer 1, and the second pretreatment unit 30 for coating the FSC on the wafer 1 dried by the second pretreatment unit 30 using hot plate heating and oven heating. The glass processing section 300 includes an FSC coating section 40, a cleaning section 50 for cleaning the FSC-coated wafer 1, and a third FSC coating section 70 for coating the FSC again.

The semiconductor device manufacturing apparatus further includes a bonding section 80 for bonding the wafer 1 and the glass plate 4 which have been processed by the wafer processing section 200 and the glass processing section 300, and a bonding section 80 for bonding them to the glass plate. Wafer processing section 90 for polishing wafer 1 and peeling section 10 for peeling wafer 1 after processing from glass plate 4
Has 0.

FIG. 3 is a block diagram showing the detailed structure of the second FSC coating section 40. In FIG. 3, the second FSC coating unit 40 includes a heat treatment unit 41 for heating the wafer 1 by a hot plate, a cooling treatment unit 42 for cooling the heated wafer 1, and an FSC for applying FSC to the cooled wafer 1. Coating section 43, F
It has a hot plate heating section 44 for heating the wafer 1 coated with SC with a hot plate, and an oven heating section 45 for heating with an oven.

FIG. 4 is a block diagram showing the detailed structure of the peeling section 100. In FIG. 4, the peeling unit 100
Is a resist removal processing unit 101 that removes the resist leaving the electrode portion of the wafer 1, an NMP automatic peeling cleaning unit 102 that performs automatic peeling cleaning by NMP, and an acetone immersion unit that dips the wafer 1 from the glass plate 4 by immersing it in acetone. 1
Has 03.

FIG. 5 is a flow chart showing the flow of bonding and peeling of glass plates in the wafer manufacturing process of the present invention. That is, this flow shows the flow of the steps of bonding and peeling the wafer and the glass plate of FIG. 1 in detail. In FIG. 5, the process flow of the wafer 1 and the process flow of the glass plate 4 are separately performed, and after the two are bonded together, they become one flow to produce a wafer. In the flow chart of FIG. 5, the steps indicated by double frames are the steps modified by the present invention. That is, in the present invention, the FSC coating process of step S4 and the peeling process of step S10 are different from the conventional process.

First, the glass plate 4 was washed with acetone for 30 seconds ± 2 seconds, washed with pure water for 1 minute ± 2 seconds, washed with acetone for 30 seconds ± 2 seconds, and washed with pure water in the pretreatment step. Washing for 1 minute ± 2 seconds → 800 dryer
Rotate at rpm and dry for 90 seconds (step S
1). Next, in the FSC coating process,
Using FSC of about 5 cc, heating at 120 ° C. for 60 seconds → 23 ° C., cooling for 60 seconds → rotating the dryer at 2000 rpm, and drying at 120 ° C. for 150 seconds is performed twice (step). S2). The process contents of steps S1 and S2 are the same as the conventional one. As a result, the FSC applied to the glass plate 4 is in a dried state.

On the other hand, the wafer 1 is first cleaned in the pretreatment step with acetone for 30 seconds ± 2 seconds → pure water for 1 minute ± 2 seconds → acetone for 30 seconds ± 2.
Washing for seconds → Washing with pure water for 1 minute ± 2 seconds → Drying is performed by rotating the dryer at 800 rpm for 90 seconds (step S3). The wafer pretreatment process in step S3 is the same as the conventional process.

In the present invention, the step of the FSC coating process of step S4 is different from the conventional one. That is, FS
In the step of C coating treatment, after applying 5 cc of FSC to the wafer 1, in addition to heating by a hot plate, baking heat treatment by an oven is added to completely dry the FSC. That is, in the prior art, only the hot plate was used for heating in the coating operation, but in the present invention, a baking operation by an oven is added as additional heating. As a result, the FSC is baked so that the FSC is completely dried (step S4). Details of the FSC coating in step S4 will be described later with reference to the flowchart of FIG.

In step S4, the FSC is applied to the wafer 1.
After coating and drying, the oven box is left to stand for 10 minutes ± 1 minute for cleaning in the same process as the conventional one (step S5). Further, hexamethyldisilazane (OAP) treatment is performed for 5 minutes ± 2 seconds (step S
6) After that, the FSC coating process is performed again. In this FSC coating process, 5cc of FSC was used and the dryer was rotated at 300 rpm in the first step to
After drying for 2 seconds, in the second step, turn the dryer on
It is rotated at 500 rpm and dried for 20 seconds (step S7). In the step of FSC coating in step S7, the FSC coated on the wafer 1 is not completely dried.

Next, the glass plate 4 in which the FSC coat has been dried by the FSC coating treatment in step S2 and the wafer 1 in which the FSC coat is not dried in the FSC coating treatment in step S7 are shown in FIG. ) As shown in Fig. The bonding condition at this time is vacuuming in a pressure and heating state at a temperature of 125 ° C. for 900 seconds (step S8). After the wafer 1 and the glass plate 4 are bonded together, the wafer 1 is processed. To process the wafer 1, as shown in FIGS. 1B and 1C, the wafer 1 is thinly polished or electrodes are attached to the wafer 1 (step S9).

Next, as shown in FIG. 1D, the wafer 1
Is peeled from the glass plate 4, but this peeling process is different from the conventional process. In other words, in the conventional peeling process, the glass plate 4 and the wafer 1 which were bonded together were immersed in a solution of acetone to dissolve the FSC, so that the peeling time was 86%.
It took a long time, but in the peeling process of the present invention, N
Since the automatic peeling condition by MP is set and the work is performed, the wafer 1 can be peeled from the glass plate 4 in about 42 hours (step S10). That is, the peeling of the glass plate in step S10 is performed according to the flowchart of FIG. 7, and details thereof will be described later. The wafer thus peeled is divided into chips by cutting at each electrode.

Next, the FSC coating process of the present invention in step S4 of FIG. 5 will be described in detail. FIG. 6 is a flowchart showing the steps of FSC coating on a wafer in the present invention. That is, this figure shows the flow of the FSC coating process in step S4 of FIG. 5 in detail. Incidentally, in the flow chart of FIG. 6, the steps indicated by double frames are the steps added by the present invention. That is, in the process of the present invention, compared to the conventional process,
In step S15, a step of heating in an oven at 120 ° C. for 45 minutes is added.

First, the wafer 1 is placed on a hot plate.
Is heated at 120 ° C. for 60 seconds (step S11). Then, after cooling at 23 ° C. for 60 seconds (step S1
2) Apply FSC to the wafer 1 (step S1)
3). Furthermore, by hot plate, 120 ℃, 15
The heating for 0 seconds is repeated twice (step S14). Then, as a step added by the present invention, baking is performed in an oven at 120 ° C. or higher for 45 minutes (step S15) to completely dry the FSC and finish the FSC application. In step S15, instead of heating in an oven at 120 ° C. or higher for 45 minutes, heating in a hot plate at 120 ° C. or higher for 3 minutes may be performed.
Minute heating is preferred. In this way, in the FSC coating operation, after the heating by the hot plate in step S11 and the baking heating by the oven in step S15, the bonding strength between the wafer 1 and the glass plate 4 is further improved.

Next, the step of peeling the glass plate of the present invention in step S10 of FIG. 5 will be described in detail. FIG. 7 is a flow chart showing the steps of peeling a glass plate according to the present invention. That is, this figure shows step S10 of FIG.
3 shows the flow of the stripping process in detail. Incidentally, FIG.
In the flowchart, the steps indicated by double frames are the steps modified by the present invention.

In FIG. 7, first, when the resist removing process is finished with the electrode portion of the wafer 1 left (step S21), automatic peeling cleaning by NMP, which is a feature of the present invention, is performed (step S22). As described above, this NMP is an n-methyl-2pyrrolidone-based solvent, has a chemical property of becoming alkaline by reacting with water, and is preferably used as a stripping solution. For example, NM
Examples of P include 104 stripper (registered trademark) manufactured by Tokyo Ohka Kogyo Co., Ltd. Such automatic peeling cleaning of NMP is performed by an automatic peeling cleaning machine.

That is, in the NMP automatic peeling cleaning in step S22, first, the NMP peeling liquid is heated to 95 ° C. and immersed for 60 minutes or more with stirring. If possible, it is desirable to soak for 90 minutes. Furthermore, since NMP has become alkaline by reacting with water, it is washed with isopropyl alcohol (IPA) for 5 minutes. Then, it is washed with pure water for 5 minutes and dried in an oven at 90 ° C. for about 10 minutes to remove the attached water. Here, since NMP has the properties of an ignition point of about 290 ° C. and a flash point of about 90 ° C., NMP is heated to a temperature around the flash point (95 ° C. which is slightly higher than the flash point in the above example). The peeling effect is further improved by stirring.

Then, it is immersed in acetone for 42 hours (step S23), and it is visually judged whether or not the wafer 1 is peeled from the glass plate 4 (step S24), and this is repeated until peeled (NO in step S24). When the wafer 1 is peeled from the glass plate 4 (YES in step S24), the peeling work is finished (step S25).

That is, conventionally, the NMP of step S22 is used.
Since it was immersed in acetone without performing the automatic peeling cleaning according to (4), it took 86 hours for the glass plate 4 to be peeled. However, since the adhesive 3 such as FSC can be swollen by adding the step of automatic peeling cleaning by NMP in step S22 as in the present invention, the dipping time in acetone is sufficient for about 42 hours. The glass plate 4 can be peeled off.

FIG. 8 shows NMP as Tokyo Ohka Kogyo Co., Ltd.
It is a peeling work table | surface when using the 104 peeling liquid made from. In FIG. 8, the normal work and the special work are steps of resist stripping that are normally performed with 104 stripping solution, and each step is performed for the working time shown in the chart. Further, the step of peeling the glass plate of the additional portion is a step added by the present invention. That is, the 104 stripper is an organic solvent used for stripping the resist, is a solution having a property of dissolving the resist well, has no influence of corrosion or the like on metal and GaAs, and is conventionally used even in semiconductor manufacturing process work. It is a widely used and proven chemical. Therefore, the device does not cause any damage even if a dipping operation of 90 minutes is added to peel the glass plate according to the present invention.

FIG. 9 is a graph showing the distribution of the peeling time of the glass plate in the present invention and the conventional process. In FIG.
The peeling time of the glass plate is plotted on the horizontal axis and the number of peelings is plotted on the vertical axis, showing the peeling time distribution (a) of the present invention and the conventional peeling time distribution (b). The number of samples is 300 in both the conventional process and the process of the present invention. As is clear from the figure, the peeling time distribution (b) in the conventional process is 8
It varies depending on the normal distribution centered on 6 hours, but σ is quite large. On the other hand, in the peeling time distribution (a) in the process of the present invention, the peeling time is a normal distribution with a small σ centered at 42 hours. In the case of the peeling time distribution (a) of the present invention, the working time of 90 minutes for the additional portion shown in FIG. 8 is not included.

As described above, the wafer 1 is shown in FIG.
As shown in the process of step S2, the FSC coating in step S4 and the FSC coating in step S7 are performed twice. In the first coating, the applied FSC adhesive is sufficiently dried in an oven, but in the second coating. The FSC adhesive applied in the above coating is not dried. On the other hand, the glass plate 4 is the first FSC
The coating alone dries the FSC adhesive well.
Since the wafer 1 and the glass plate 4 are bonded to each other by applying pressure and heating by vacuuming after performing such treatment, the adhesive force between the wafer 1 and the glass plate 4 is sufficiently strengthened.

Before peeling off the glass plate 4, FIG.
In step S22 of, the FMP is immersed in the NMP main component solution for 60 minutes or more (for example, 90 minutes),
Since the SC swells sufficiently, the peeling force increases. Further, the peeling force can be further increased by heating the NMP main component solution to about 95 ° C. At this time, when the glass plate 4 and the wafer 1 are immersed in the NMP main component solution, the solution is sufficiently stirred so that decomposition products at the time of dissolution do not adhere to the surface of the FSC and the peeling force varies. I try not to.

After the treatment with the NMP main component solution, in order to remove decomposition products and replace the NMP main component solution,
Since the cleaning is performed with isopropyl alcohol (IPA), the wafer 1 is not deteriorated by the chemicals. That is, if the moisture remains attached without the replacement with IPA, the NMP main component solution reacts with the moisture, and the NMP main component solution becomes alkaline, resulting in damage to the wafer 1. In the present invention, since the wafer is washed with IPA, there is no fear that the wafer 1 will deteriorate.

The above-described embodiments are examples for explaining the present invention, and the present invention is not limited to the above-mentioned embodiments, and various modifications can be made within the scope of the invention. is there. For example, although a specific example of the FSC drying method is not described in the above-mentioned embodiment, the FSC can be dried by various heating methods such as heating with a lamp and warm air. Further, although the FSC coating amount is set to 5 cc in the above-mentioned embodiment, the coating amount can be appropriately changed according to the size of the wafer and the like. Further, the mixing ratio of NMP, which is the main component, can be changed on a case-by-case basis so that an optimum peeling force can be obtained.

In addition, under the automatic peeling work condition, NMP
Whether the effective peeling force can be obtained even if the stirring is not performed or the heating temperature is changed to other than 95 ° C.
It can be decided by cut and try. Furthermore, in the above-mentioned embodiment, after the automatic peeling work, the immersion was performed for 42 hours with acetone. However, it was confirmed by various experiments whether a strong peeling force can be obtained even when immersed in a solution other than acetone. can do. Further, in the above embodiment, IPA was used for cleaning NMP at the time of automatic peeling, but it is also conceivable to change it to another alcohol (eg, ethyl alcohol or methyl alcohol). Further, even when the bonding material of the wafer is changed to a material other than the glass plate, the optimum peeling condition can be found based on the peeling process of the above embodiment. Further, the heating / cooling time and the heating / cooling temperature of the glass plate or the wafer in the pretreatment before applying the FSC can be variously changed to obtain the optimum peeling effect.

[0048]

As described above, according to the present invention,
FSC coating on the wafer is performed in two steps, 1
In the second FSC application, baking is performed in an oven to sufficiently dry it, and in the second FSC application, it is heated by a hot plate so that the FSC is not dried. Then, the applied FSC is dried glass plate and FS
The non-dried wafer of C is attached by drawing a vacuum under pressure and heating. This makes it possible to sufficiently increase the adhesive strength between the glass plate and the wafer. Further, upon peeling, the glass plate and the wafer are immersed in a high temperature MNP solution to swell the FSC adhesive, thereby facilitating the peeling of the glass plate and the wafer. Therefore,
In a later step, the glass plate and the wafer were placed in acetone 4 times.
The glass plate and the wafer can be separated only by immersing them for about 2 hours.

That is, conventionally, both the glass plate and the wafer were bonded in one coating step, and when peeling, the FSC was dissolved only by immersing in acetone, so that the peeling time required 86 hours. However, like the present invention,
The stripping time can be shortened to 42 hours only by adding the bake heating step of FSC and changing the automatic stripping conditions. In addition, according to the process of the present invention, the NM is embedded inside the FSC adhesive.
Since the P solution surely penetrates, it is possible to reduce variations in the peeling time between the glass plate and the wafer. Therefore, according to the manufacturing method and the manufacturing apparatus of the semiconductor device of the present invention, it is possible to greatly contribute to the improvement of the yield of the semiconductor wafer and the improvement of the productivity.

[Brief description of drawings]

FIG. 1 is a conceptual diagram showing a process of bonding and peeling a wafer and a glass plate.

FIG. 2 is a diagram showing an outline of a semiconductor device manufacturing apparatus of the present invention.

FIG. 3 is a diagram showing a second FSC coating processing section of the wafer according to the present invention.

FIG. 4 is a diagram showing a peeling portion in the present invention.

FIG. 5 is a flow chart showing a flow of bonding and peeling of glass plates in the wafer manufacturing process of the present invention.

FIG. 6 is a flowchart showing the steps of FSC coating on a wafer in the present invention.

FIG. 7 is a flow chart showing a step of peeling a glass plate in the present invention.

FIG. 8 104 NMP manufactured by Tokyo Ohka Kogyo Co., Ltd.
It is a peeling work table when a peeling liquid is used.

FIG. 9 is a diagram showing a distribution of peeling time of a glass plate in the present invention and a conventional process.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... Wafer, 2 ... P electrode, 3 ... Adhesive agent, 4 ... Glass plate, 5 ... N electrode, 10 ... 1st pretreatment part, 30 ... 2nd pretreatment part, 20 ... 1st FSC coating part , 40 ...
Second FSC coating section, 41 ... Heat treatment section, 42
... Cooling processing section, 43 ... FSC coating section, 44 ... Hot plate heating section, 45 ... Oven heating section, 50 ... Cleaning section, 60 ... OAP processing section, 70 ... Third FSC coating section, 80 ... Laminating section, 90 ... Wafer processing section, 100 ... Peeling section, 101 ... Resist removal processing section, 1
02 ... NMP automatic peeling cleaning section, 103 ... Acetone immersion section

Claims (15)

[Claims] 1. A method for manufacturing a semiconductor device in which a semiconductor wafer is adhered to a glass plate with an adhesive, the semiconductor wafer is processed, and then the semiconductor wafer is peeled from the glass plate. A step of baking and drying the applied adhesive, adhering the adhesive applied for the second time to the glass plate in an undried state, and after processing the semiconductor wafer adhered to the glass plate,
A step of swelling an adhesive that bonds the glass plate and the semiconductor wafer; and a step of dissolving the adhesive that bonds the glass plate and the semiconductor wafer, and separating the semiconductor wafer from the glass plate. A method of manufacturing a semiconductor device, comprising: 2. A method for manufacturing a semiconductor device in which a semiconductor wafer is adhered to a glass plate with an adhesive, the semiconductor wafer is processed, and then the semiconductor wafer is peeled from the glass plate, wherein the adhesive is applied to the glass plate. A second step of applying a first adhesive to the semiconductor wafer and drying it; and a third step of applying a second adhesive to the semiconductor wafer.
And a fourth step of adhering the glass plate and the semiconductor by heating under pressure in a vacuum state and adhering the semiconductor wafer adhered to the glass plate to n-methyl after processing the semiconductor wafer. -Fifth step of immersing in a pyrrolidone-based solvent for a predetermined time, and immersing the semiconductor wafer adhered to the glass plate in acetone for a predetermined time to dissolve the adhesive to dissolve the glass plate And a sixth step of separating the semiconductor wafer from the semiconductor wafer. 3. In the second step, the adhesive is heated in an oven at a predetermined temperature for a predetermined time, baked, and dried.
A method for manufacturing a semiconductor device according to. 4. After the completion of the second step, the semiconductor wafer is cleaned and treated with hexamethyldisilazane, and then the second adhesive is applied in the third step. The semiconductor device manufacturing method according to claim 2, wherein 5. The method according to claim 2, wherein in the fifth step, the n-methyl-2pyrrolidone-based solvent is heated at a predetermined temperature and immersed for a predetermined time with stirring. A method for manufacturing a semiconductor device according to claim 1. 6. The n-methyl-2pyrrolidone-based solvent is heated to a temperature around the flash point.
A method for manufacturing a semiconductor device according to. 7. In the fifth step, the n-methyl-2pyrrolidone-based solvent is immersed in the solvent for a predetermined time, followed by heating with alcohols, cleaning with pure water, and drying. The method for manufacturing a semiconductor device according to claim 2, wherein 8. The semiconductor device manufacturing method according to claim 1, wherein the adhesive is a back coating agent containing a propylene glycol solvent as a main component for protecting the semiconductor wafer. Method. 9. A semiconductor device manufacturing apparatus for adhering a semiconductor wafer to a glass plate with an adhesive, processing the semiconductor wafer, and peeling the semiconductor wafer from the glass plate, wherein the adhesive is applied to the glass plate. A second means for applying a first adhesive to the semiconductor wafer and drying it; and a third means for applying a second adhesive to the semiconductor wafer.
Means, fourth means for adhering the glass plate and the semiconductor to each other by heating under pressure in a vacuum state, and after processing the semiconductor wafer, the semiconductor wafer adhered to the glass plate is treated with n-methyl. -Fifth means of immersing in a pyrrolidone-based solvent for a predetermined time, and the semiconductor wafer adhered to the glass plate is immersed in acetone for a predetermined time to dissolve the adhesive to dissolve the glass plate. And a sixth unit for separating the semiconductor wafer from the semiconductor device. 10. In the second means, the adhesive is heated in an oven at a predetermined temperature for a predetermined time,
The semiconductor device manufacturing apparatus according to claim 9, which is subjected to a baking treatment and dried. 11. The method according to claim 9 or 10, wherein in the third means, the semiconductor wafer is cleaned and hexamethyldisilazane treatment is performed, and then a second application of the adhesive is performed. The semiconductor device manufacturing apparatus according to. 12. The method according to claim 9, wherein in the fifth means, the n-methyl-2pyrrolidone solvent is heated at a predetermined temperature and immersed for a predetermined time with stirring. The semiconductor device manufacturing apparatus as described in 1. 13. The semiconductor device manufacturing apparatus according to claim 12, wherein the predetermined temperature is a temperature about the flash point of the n-methyl-2pyrrolidone solvent. 14. In the fifth means, the n-methyl-2pyrrolidone-based solvent is immersed in the solvent for a predetermined time, and then heated cleaning with alcohol, cleaning with pure water and drying are performed. The semiconductor device manufacturing apparatus according to any one of claims 9 to 13. 15. The adhesive is a back coat agent containing a propylene glycol solvent as a main component for protecting the semiconductor wafer.
The semiconductor device manufacturing apparatus according to any one of 1.