JP2003017276A5 - - Google Patents
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- JP2003017276A5 JP2003017276A5 JP2002121945A JP2002121945A JP2003017276A5 JP 2003017276 A5 JP2003017276 A5 JP 2003017276A5 JP 2002121945 A JP2002121945 A JP 2002121945A JP 2002121945 A JP2002121945 A JP 2002121945A JP 2003017276 A5 JP2003017276 A5 JP 2003017276A5
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- JP
- Japan
- Prior art keywords
- anode
- layer
- hole
- organic compound
- emitting device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 150000002894 organic compounds Chemical class 0.000 claims 19
- 238000002347 injection Methods 0.000 claims 6
- 239000007924 injection Substances 0.000 claims 6
- 239000010409 thin film Substances 0.000 claims 5
- 239000010408 film Substances 0.000 claims 4
- 230000005525 hole transport Effects 0.000 claims 3
- 238000004519 manufacturing process Methods 0.000 claims 3
- 238000000034 method Methods 0.000 claims 3
- 230000005684 electric field Effects 0.000 claims 2
- 239000000463 material Substances 0.000 claims 2
- 239000002184 metal Substances 0.000 claims 2
- 239000002861 polymer material Substances 0.000 claims 1
Claims (20)
前記有機化合物層は、前記スリットを充填しなおかつ前記陽極の上部を覆って形成された正孔発生層を含み、
前記正孔発生層は前記陽極に接していることを特徴とする発光装置。 Possess an anode in which slits are formed, an organic compound layer between the cathode,
The organic compound layer is seen containing a hole generating layer formed over the top of the filled and yet the anode of said slit,
The light emitting device, wherein the hole generating layer is in contact with the anode .
前記有機化合物層は、前記スリットを充填しなおかつ前記陽極の上部を覆って形成された正孔発生層を含み、
前記正孔発生層は前記陽極に接していることを特徴とする発光装置。Is connected to the thin film transistor, and then an anode in which slits are formed, an organic compound layer between the cathode,
The organic compound layer is seen containing a hole generating layer formed over the top of the filled and yet the anode of said slit,
The light emitting device, wherein the hole generating layer is in contact with the anode .
前記有機化合物層は、前記スリットを充填しなおかつ前記陽極の上部を覆って形成された正孔発生層を含み、
前記正孔発生層は前記陽極に接し、
前記正孔発生層の成膜表面は平坦であることを特徴とする発光装置。 Possess an anode in which slits are formed, an organic compound layer between the cathode,
The organic compound layer includes a hole generation layer formed to fill the slit and cover the upper part of the anode ,
The hole generating layer is in contact with the anode;
The light emitting device characterized in that the film-forming surface of the hole generating layer is Tan Taira.
前記有機化合物層は、前記スリットを充填しなおかつ前記陽極の上部を覆って形成された正孔発生層を含み、
前記正孔発生層は前記陽極に接し、
前記正孔発生層の成膜表面は平坦であることを特徴とする発光装置。Is connected to the thin film transistor, and possess an anode in which slits are formed, an organic compound layer between the cathode,
The organic compound layer includes a hole generation layer formed to fill the slit and cover the upper part of the anode,
The hole generating layer is in contact with the anode;
The light emitting device characterized in that the film-forming surface of the hole generating layer is Tan Taira.
前記有機化合物層は、前記スリットを充填しなおかつ前記陽極の上部を覆って形成された正孔発生層を含み、
前記正孔発生層は前記陽極に接し、
前記正孔発生層は前記陽極から前記有機化合物層にかかる電界を均一にするものであることを特徴とする発光装置。 Possess an anode in which slits are formed, an organic compound layer between the cathode,
The organic compound layer includes a hole generation layer formed to fill the slit and cover the upper part of the anode ,
The hole generating layer is in contact with the anode;
The hole generating layer is a light-emitting device characterized in that is to uniform the electric field applied to the organic compound layer from the anode.
前記有機化合物層は、前記スリットを充填しなおかつ前記陽極の上部を覆って形成された正孔発生層を含み、
前記正孔発生層は前記陽極に接し、
前記正孔発生層は前記陽極から前記有機化合物層にかかる電界を均一にするものであることを特徴とする発光装置。Is connected to the thin film transistor, and possess an anode in which slits are formed, an organic compound layer between the cathode,
The organic compound layer includes a hole generation layer formed to fill the slit and cover the upper part of the anode ,
The hole generating layer is in contact with the anode;
The hole generating layer is a light-emitting device characterized in that is to uniform the electric field applied to the organic compound layer from the anode.
前記有機化合物層は、発光層と、正孔注入層、正孔輸送層または電子輸送層とを含むことを特徴とする発光装置。The organic compound layer includes a light emitting layer and a hole injection layer, a hole transport layer, or an electron transport layer.
前記有機化合物層は、前記スリットを充填しなおかつ前記陽極の上部を覆って形成された正孔発生層、及び前記正孔発生層と接して形成された正孔注入層を含み、
前記正孔発生層は前記陽極に接していることを特徴とする発光装置。 Possess an anode in which slits are formed, an organic compound layer between the cathode,
The organic compound layer, hole generating layer formed over the top of yet the anode filling the slit, and saw including a hole injection layer formed in contact with the hole generating layer,
The light emitting device, wherein the hole generating layer is in contact with the anode .
前記有機化合物層は、前記スリットを充填しなおかつ前記陽極の上部を覆って形成された正孔発生層、及び前記正孔発生層と接して形成された正孔注入層を含み、
前記正孔発生層は前記陽極に接していることを特徴とする発光装置。Is connected to the thin film transistor, and possess an anode in which slits are formed, an organic compound layer between the cathode,
The organic compound layer, hole generating layer formed over the top of yet the anode filling the slit, and saw including a hole injection layer formed in contact with the hole generating layer,
The light emitting device, wherein the hole generating layer is in contact with the anode .
前記正孔発生層は低分子材料及び電子受容体からなることを特徴とする発光装置。In any one of Claims 1 thru | or 10 ,
The light emitting device, wherein the hole generating layer is made of a low molecular material and an electron acceptor.
前記正孔発生層は高分子材料及び電子受容体からなることを特徴とする発光装置。In any one of Claims 1 thru | or 10 ,
The light emitting device, wherein the hole generating layer is made of a polymer material and an electron acceptor.
前記スリットの間隔が０．５〜３μｍであることを特徴とする発光装置。In any one of Claims 1 to 12,
The light emitting device characterized in that the interval between the slits is 0.5 to 3 μm.
前記スリットの幅が前記スリットの間隔の５〜１５倍であることを特徴とする発光装置。In any one of Claims 1 thru | or 13,
The light emitting device, wherein a width of the slit is 5 to 15 times an interval of the slit.
前記陽極の面積に対して前記スリットが形成される面積の割合が７０〜９０％であることを特徴とする発光装置。In any one of Claims 1 thru | or 14,
The ratio of the area in which the slit is formed with respect to the area of the anode is 70 to 90%.
前記陽極は金属膜からなることを特徴とする発光装置。The light-emitting device, wherein the anode is made of a metal film.
前記スリットを充填し、なおかつ前記陽極の上部を覆って正孔発生層を形成し、
前記正孔発生層と接して正孔注入層、正孔輸送層、発光層または電子輸送層を形成し、
前記正孔発生層は前記陽極に接し、
前記正孔発生層の成膜表面は平坦であることを特徴とする発光装置の作製方法。Forming an anode with slits,
Filling the slit and covering the top of the anode to form a hole generating layer;
Forming a hole injection layer, a hole transport layer, a light emitting layer or an electron transport layer in contact with the hole generation layer ,
The hole generating layer is in contact with the anode;
A method for manufacturing a light-emitting device, characterized in that a film forming surface of the hole generating layer is flat .
薄膜トランジスタと前記陽極を接続し、
前記スリットを充填し、なおかつ前記陽極の上部を覆って正孔発生層を形成し、
前記正孔発生層と接して正孔注入層、正孔輸送層、発光層または電子輸送層を形成し、
前記正孔発生層は前記陽極に接し、
前記正孔発生層の成膜表面は平坦であることを特徴とする発光装置の作製方法。Forming an anode with slits,
Connecting the thin film transistor and the anode;
Filling the slit and covering the top of the anode to form a hole generating layer;
Forming a hole injection layer, a hole transport layer, a light emitting layer or an electron transport layer in contact with the hole generation layer ,
The hole generating layer is in contact with the anode;
A method for manufacturing a light-emitting device, characterized in that a film forming surface of the hole generating layer is flat .
前記陽極は金属膜からなることを特徴とする発光装置の作製方法。The method for manufacturing a light-emitting device, wherein the anode is made of a metal film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002121945A JP2003017276A (en) | 2001-04-27 | 2002-04-24 | Light-emitting device and its forming method |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001-133554 | 2001-04-27 | ||
| JP2001133554 | 2001-04-27 | ||
| JP2002121945A JP2003017276A (en) | 2001-04-27 | 2002-04-24 | Light-emitting device and its forming method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2003017276A JP2003017276A (en) | 2003-01-17 |
| JP2003017276A5 true JP2003017276A5 (en) | 2005-09-22 |
Family
ID=26614547
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002121945A Withdrawn JP2003017276A (en) | 2001-04-27 | 2002-04-24 | Light-emitting device and its forming method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2003017276A (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003243182A (en) * | 2002-02-19 | 2003-08-29 | Sanyo Electric Co Ltd | Organic el element |
| EP1808909A1 (en) * | 2006-01-11 | 2007-07-18 | Novaled AG | Electroluminescent light-emitting device |
| JP4770492B2 (en) * | 2006-02-02 | 2011-09-14 | セイコーエプソン株式会社 | Light emitting device and manufacturing method thereof |
| CN102560632B (en) * | 2010-12-21 | 2016-06-29 | 长春富乐玻显示技术有限公司 | Solid solution inducing layer for on-plane surface phthalocyanine thin film weak epitaxial growth |
| CN110447117B (en) * | 2017-02-20 | 2022-11-04 | 诺瓦尔德股份有限公司 | Electronic semiconductor device, method for producing electronic semiconductor device, and compound |
-
2002
- 2002-04-24 JP JP2002121945A patent/JP2003017276A/en not_active Withdrawn
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