JP2003007798A - Method of treating wafer, system of treating wafer, method of manufacturing epitaxial wafer and system of manufacturing epitaxial wafer - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method of treating wafers which can recognize the effect in the case where the number of sheets of the wafers put in a load lock chamber and the number of sheets of the wafers subjected to prescribed treatment do not match with each other, and to provide a system of treating the wafers. SOLUTION: In a method of treating wafers, a plurality of sheets of the wafers (such as single crystal substrate S) are housed in each of cassettes 30 arranged within load lock chambers 6 and 7 of a wafer treatment device (such as an epitaxial wafer manufacturing device), and the wafers within the chambers 6 and 7 are carried in order into a treating chamber (such as a reaction chamber 1) to perform a prescribed treatment on the wafers in a single-wafer type. By this method, the number of the put-in sheets of the wafers put in the cassettes 30 arranged within the chambers 6 and 7 by a transfer unit 20 is calculated, while the number of times of the treatments performed on the wafers is calculated and both calculated results of the number of times of the treatments and the number of the put-in sheets coincide with each other or not is decided.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wafer processing method, a wafer processing system, an epitaxial wafer manufacturing method, and an epitaxial wafer manufacturing system.

[0002]

2. Description of the Related Art An epitaxial wafer such as a silicon epitaxial wafer can be manufactured by vapor phase epitaxially growing an epitaxial layer such as a silicon epitaxial layer on a main surface of a single crystal substrate such as a silicon single crystal substrate. Such vapor phase epitaxial growth can be performed by using, for example, a single wafer type epitaxial wafer manufacturing apparatus.

A single-wafer type epitaxial wafer manufacturing apparatus is mainly used for a load-lock chamber in which a cassette capable of accommodating a plurality of single-crystal substrates is arranged, and a single-crystal substrate which is sequentially loaded from the cassette in the load-lock chamber. And a reaction chamber for vapor phase epitaxial growth of a single crystal thin film on the surface in a single-wafer type.

In order to vapor-deposit a single crystal thin film on the main surface of a single crystal substrate by using a single-wafer type epitaxial wafer manufacturing apparatus, first, a plurality of single crystal substrates are mounted in a cassette, and this cassette is mounted. Is placed in the load lock room.

Next, the apparatus recognizes (mapping) the single crystal substrate of the cassette placed in the load lock chamber to recognize the position in the cassette where the single crystal substrate is mounted. That is, the position and number of single crystal substrates in the cassette are recognized.

Next, based on the above recognition, the single crystal substrate in the cassette is transferred to the reaction chamber, and a single crystal thin film is vapor-deposited on the main surface of the single crystal substrate transferred to the reaction chamber.
The single crystal substrate (epitaxial wafer) after the vapor phase growth is returned to the cassette in the load lock chamber again, by performing a series of vapor phase growth steps for performing the operations from 1 to 3 for each single crystal substrate in the cassette, A single crystal thin film is sequentially vapor-deposited on the main surface of the single crystal substrate in the cassette.

[0007]

However, the recognition (mapping) of the single crystal substrate in the cassette by the apparatus is as follows.
It is not always done correctly, for example, although it is actually installed in the cassette, it is not recognized,
That is, recognition omission may occur. In this case, the single crystal substrate which is not recognized is not subjected to the vapor phase growth by the series of vapor phase growth steps, and after the series of vapor phase growth steps, another (the vapor phase growth has been performed) single crystal substrate is performed. This is a problem because it is carried out from the load lock chamber together with the substrate. The single crystal substrate which is not recognized is not processed, but if it is put into the next step and processed without being processed, the single crystal substrate will be lost. Further, for example, a single crystal substrate for epitaxial use often contains boron or phosphorus at a high concentration. When heat treatment is performed in the next step, when batch processing is performed on the processed single crystal substrate together with the single crystal substrate on which such an unprocessed epitaxial film is not formed, boron or boron from the surface of the unprocessed single crystal substrate is processed. There is a serious problem that phosphorus is not only diffused into the furnace by outward diffusion to contaminate the inside of the furnace but also adversely affects the processed single crystal substrate.

The present invention has been made to solve the above problems, and when the number of wafers loaded into the load lock chamber and the number of wafers subjected to a predetermined process do not match, An object of the present invention is to provide a wafer processing method and processing system that can recognize this fact. Further, the present invention has been made to solve the above problems, and the number of single crystal substrates placed in the load lock chamber is equal to the number of single crystal substrates subjected to vapor phase epitaxial growth. If not, it is an object of the present invention to provide an epitaxial wafer manufacturing method and an epitaxial wafer manufacturing system capable of recognizing this fact.

[0009]

In order to solve the above problems, the present invention stores a plurality of wafers in a cassette arranged in a load lock chamber of a wafer processing apparatus and processes the wafers in the load lock chamber. In the wafer processing method in which the wafers are sequentially loaded into the chamber and a predetermined process is performed on the loaded wafers in a single wafer system, the number of wafers loaded into the cassette placed in the load lock chamber by a transfer device is counted. On the other hand, it is characterized in that the number of times of the processing is counted and it is determined whether or not both counting results of the number of times of the processing and the number of inserted sheets match.

Here, the single-wafer method is a method of sequentially performing a predetermined process on each wafer. The predetermined treatment includes, for example, various vapor phase growth, various heat treatments, sputtering and the like. Various types of vapor phase growth include vapor phase epitaxial growth of a single crystal thin film on the main surface of a single crystal substrate, chemical vapor deposition (CVD) of a polycrystalline thin film on the main surface of a single crystal substrate, and polycrystalline substrate. Vapor phase growth of a polycrystalline thin film on the main surface of.

In the wafer processing method of the present invention, it is preferable to notify that fact when both the number of times of processing and the number of inserted wafers do not match.

Further, the wafer processing system of the present invention is a single wafer type in which a load lock chamber in which a cassette capable of accommodating a plurality of wafers is arranged, and wafers sequentially loaded from the cassettes in the load lock chamber are specified. A wafer processing apparatus having a processing chamber for performing the processing of 1., a transfer apparatus for sequentially loading and storing a plurality of wafers in a cassette arranged in the load lock chamber, and the cassette by the transfer apparatus. The number-of-inputs counting device for counting the number of input wafers, the number-of-processings counting device for counting the number of processings, the number of processings counted by the number-of-processings counting device, and the number-of-inputs counting device. And a determination device that determines whether or not both counting results of the number of inserted sheets to be counted coincide with each other.

In the wafer processing system of the present invention, when the result of the judgment by the judgment device is that the count results of the number of times of the processing and the counted number of inserted wafers do not match, a notification device for notifying this is further provided. It is preferable that

Further, according to the present invention, a plurality of single crystal substrates are housed in a cassette arranged in a load lock chamber of an epitaxial wafer manufacturing apparatus, and the single crystal substrates are sequentially carried into the reaction chamber from the cassette in the load lock chamber. In a method of manufacturing an epitaxial wafer, in which a single-crystal thin film is vapor-phase epitaxially grown on the main surface of the single-crystal substrate in a single-wafer method, a transfer device is mounted on the cassette arranged in the load lock chamber. While counting the number of single crystal substrates to be charged by, the number of times of growth for performing the vapor phase epitaxial growth is counted, and it is determined whether or not both the counting results of the number of growth and the number of inputs match. I am trying.

In the method for manufacturing an epitaxial wafer according to the present invention, it is preferable that when the counting results of the number of times of growth and the number of charged wafers do not match, this fact is notified.

Further, the epitaxial wafer manufacturing system of the present invention comprises a load lock chamber in which a cassette capable of accommodating a plurality of single crystal substrates is arranged, and a single crystal substrate which is sequentially loaded from the cassettes in the load lock chamber. An epitaxial wafer manufacturing apparatus comprising a reaction chamber for vapor phase epitaxial growth of a single crystal thin film on the main surface, and a plurality of single crystal substrates are sequentially placed in a cassette arranged in the load lock chamber. Transfer device to store
A number-of-inputs counting device that counts the number of single-crystal substrates that are loaded into the cassette by the transfer device, a growth number counting device that counts the number of times of growth for performing the vapor phase epitaxial growth, and a growth number counting device. And a determination device that determines whether or not both counting results of the growth number and the input number counted by the input number counting device are coincident with each other.

In the epitaxial wafer manufacturing system of the present invention, when the result of the determination by the determination device is that the count results of the number of growth times and the count of the number of inserted wafers do not match, a notification device for notifying this is further provided. It is preferable that

[0018]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below with reference to the drawings. The present embodiment describes an epitaxial wafer manufacturing method as an example of a wafer processing method according to the present invention and an epitaxial wafer manufacturing system as an example of a wafer processing system according to the present invention.

First, the structure of an epitaxial wafer manufacturing system 100 according to the present invention (hereinafter, simply referred to as a manufacturing system 100) will be described with reference to FIGS.

As shown in FIGS. 1 and 2, the manufacturing system 100 includes an epitaxial wafer manufacturing apparatus 10.
(Hereinafter, also simply referred to as the manufacturing apparatus 10) and a transfer for loading the silicon single crystal substrate S (single crystal substrate; hereinafter also simply referred to as the substrate S) into the cassette 30 arranged in the manufacturing apparatus 10. Mounting device 20, the number of substrates S loaded and the number of substrates S
Control device 40 (FIG. 3) that determines whether or not the number of growths on the substrate 30 is the same as that of the substrate S on the cassette 30. Inserted number and cassette 3
When the number of growth on the substrate S in 0 does not match, a display device (also functioning as a notification device) 50 (FIG. 3) for notifying the fact by a display, and loading of the substrate S into the cassette 30. When the number of sheets and the number of times of growth on the substrate S in the cassette 30 do not match, a sounding device (notifying device) 80 (FIG. 3) for notifying the effect by sound is schematically configured.

Of these, first, the configuration of the manufacturing apparatus 10 will be described.

As shown in FIGS. 1 and 2, the manufacturing apparatus 1
0 is on the main surface of the load lock chambers 6 and 7 in which the cassettes 30 capable of accommodating a plurality of substrates S are arranged, and on the main surface of the single crystal substrates S sequentially loaded from the cassettes 30 in the load lock chambers 6 and 7. Vapor phase epitaxial growth of a single-crystal epitaxial layer (single crystal thin film) (hereinafter, also simply referred to as vapor phase growth)
Reaction chamber 1 for controlling the substrate S and the substrate S and the substrate S after vapor phase growth, that is, a silicon epitaxial wafer EPW
A handler 4 for transferring (hereinafter, simply referred to as an epitaxial wafer EPW) between the load lock chambers 6 and 7 and the reaction chamber 1, and a transfer chamber 3 provided with the handler 4 are provided. Has been done.

Here, the load lock chambers 6 and 7 are respectively divided into upper and lower two chambers as shown in FIG. That is, the load lock chamber 6 is configured to include the upper side branch chamber 61 and the lower side branch chamber 62, and similarly, the load lock chamber 7 is also configured to include the upper side branch chamber 71 and the lower side branch chamber 72.

Of these, the upper compartments 61 and 71 are used to load the substrate S before vapor phase growth into the manufacturing apparatus 10 and to carry the epitaxial wafer EPW out of the manufacturing apparatus 10. In the upper compartments 61, 71,
Doors 63 and 73 are provided which are opened at the time of carrying out and loading. Further, the upper compartments 61 and 71 are provided with door open state detection switches 63s and 73s (FIG. 3) for detecting the open states of the doors 63 and 73, respectively.

On the other hand, the lower sub-chambers 62 and 72 are connected to the transfer chamber 3 respectively, so that the substrate S can be carried into the reaction chamber 1 from the load lock chambers 6 and 7 via the transfer chamber 3, or the epitaxial wafer. It is used to carry out EPW from the reaction chamber 1 to the load lock chambers 6 and 7 via the transfer chamber 3. In addition, between the lower compartments 62 and 72 and the transfer chamber 3,
Gate valves 64 and 74 for opening and closing between the lower compartments 62 and 72 and the transfer chamber 3 are provided. Further, gate valve open state detection switches 64s and 74s (FIG. 3) for detecting the open states of the gate valves 64 and 74 are provided between the lower side compartments 62 and 72 and the transfer chamber 3.

Further, in the load lock chambers 6 and 7, lift tables 65 and 75 for raising and lowering the cassette 30 between the upper compartments 61 and 71 and the lower compartments 62 and 72 are provided. The cassette 30 may be, for example, a lift table 65, 75.
Always installed on top.

Further, in the load lock chambers 6 and 7, there are provided detection sensors 66 and 76 for the apparatus to recognize (map) the substrate S in the cassette 30. The cassette 3 is moved along with the lowering operation of the elevating tables 65 and 75.
When moving 0 from the upper compartments 61, 71 to the lower compartments 62, 72, each substrate S in the cassette 30 is detected by the detection sensor 6
The substrate S in the cassette 30 can be recognized (mapped) by the apparatus by the detection by 6, 6 or 76. Here, the mapping means that the apparatus recognizes the substrate S, and particularly creates data that can recognize the number and position of the substrate S in the cassette 30. The number and positions of the substrates S in the cassette 30 can be determined by, for example, moving the lifts 65 and 75 to detect the detection sensors 66 and 67.
The light is blocked when the wafer passes through, so it can be detected.

In addition, inside the load lock chambers 6 and 7, there are provided gate valves 67 and 77 for opening and closing between the upper compartments 61 and 71 and the lower compartments 62 and 72.

The manufacturing apparatus 10 is also provided with a gate valve 5 for opening and closing between the transfer chamber 3 and the reaction chamber 1.

Further, the manufacturing apparatus 10 includes a reaction gas supply device (not shown) for supplying a reaction gas to the reaction chamber 1 in order to carry out vapor phase growth in the reaction chamber 1, and this reaction gas supply device. A reaction gas supply start detection switch 11 (FIG. 3) for detecting the start of the supply of the reaction gas (for example, the opening operation of the valve of the reaction gas supply pipe).

In addition, the manufacturing apparatus 10 is equipped with a heating device (not shown) for setting a desired temperature condition in the reaction chamber 11 at the time of vapor phase growth or the like.

Next, the structure of the transfer device 20 will be described. As shown in FIGS. 1 and 2, the transfer device 20 is arranged in front of the doors 63 and 73 provided in the upper compartments 61 and 71 of the load lock chambers 6 and 7. This transfer device 20
Is a cassette 30 in which the substrates S are taken out one by one from the external cassette 35 arranged in front of the upper compartments 61, 71 of the load lock chambers 6, 7 and arranged in the upper compartments 61, 71 of the load lock chambers 6, 7. It is equipped with a transfer hand (not shown) that is sequentially loaded into and stored in.

Next, the configuration of the control device 40 will be described. The control device 40 of FIG. 3 includes a CPU 41, a ROM 42,
The RAM 43 and the like are provided.

Of these, the CPU 41 performs calculations, determinations, controls, and the like. The ROM 42 is the CPU 41
Each program for calculation, determination, control, etc. is stored.

The RAM 43 has a work area for the CPU 41, a storage area for storing a counter value of the number of substrates S loaded into the cassette 30 (hereinafter, also referred to as a number-of-insertion counter), and the number of vapor phase growth on the substrates S. It has a storage area of a counter value of (growth number) (hereinafter, also referred to as a growth number counter) and the like. That is, the control device 40 has the functions of the input number counting device and the growth number counting device according to the present invention.

It should be noted that the number-of-inserted-paper counters are provided one for each of the load lock chambers 6 and 7.
That is, the first number-of-inputs counter for counting the number of substrates S loaded in the cassette 30 in the load lock chamber 6 and the number of substrates S loaded in the cassette 30 in the load lock chamber 7 are set. Second to count
Is separately provided. Also,
Similarly, one growth frequency counter is provided for each of the load lock chambers 6 and 7. That is, a first growth number counter for counting the number of vapor phase growth times for the substrate S of the cassette 30 in the load lock chamber 6 and a number of vapor phase growth times for the substrate S of the cassette 30 in the load lock chamber 7 are counted. For this purpose, a second growth counter is provided separately.

Here, every time the transfer device 20 loads one substrate S into the cassette 30 in the load lock chamber 6, a signal relating to any operation in the loading process (for example, the transfer device 20). The transfer hand outputs an operation signal when the substrate S is returned to the home position after the substrate S is inserted into the cassette 30; hereinafter, also referred to as an input signal) to the control device 40. On the other hand, in the control device 40, the value of the inserted number counter is incremented by "1" each time the input signal is input.

Incidentally, the control device 40 controls the load lock chamber 6
The function of the number-of-inserted-sheets counter corresponding to is only when a predetermined condition is satisfied, such as when the open state detection sensor 63s of the load lock chamber 6 detects the open state of the door 63. To be Also, for example, the door 6
When the open state of 3 is started to be detected, the control device 4
At 0, the value of the first inserted number counter corresponding to the load lock chamber 6 is initialized to "0". Also, similarly,
The control device 40 functions as, for example, a load number counting device corresponding to the load lock chamber 7, for example, the load lock chamber 7
Only when the open state of the door 73 is detected by the door open state detection sensor 73s, and the control device 40 starts the detection of the open state of the door 73. The value is initialized to "0".

In addition, the manufacturing apparatus 10 performs a vapor phase growth on a single substrate S every time a certain signal (for example, a detection by the reaction gas supply start detection switch 11) that is a proof that the vapor phase growth has been performed. Signal; hereinafter also referred to as reaction signal.)
Is output to the control device 40. On the other hand, in the controller 40, the value of the growth number counter is incremented by "1" each time a reaction signal is input.

Incidentally, the control device 40 controls the load lock chamber 6
For example, when the open state of the gate valve 64 between the load lock chamber 6 and the transfer chamber 3 is detected by the gate valve open state detection switch 64s, the function of the growth number counting device corresponding to the above is determined. Only when the conditions are met. Further, for example, by starting detection of the open state of the gate valve 64, the control device 40
The value of the first growth number counter corresponding to the load lock chamber 6 is initialized to "0". Similarly, the control device 40 functions as a growth number counting device corresponding to the load lock chamber 6 when, for example, the open state of the gate valve 74 is detected by the gate valve open state detection switch 74s. For example, when the open state of the gate valve 74 is started to be detected, the control device 40 initializes the value of the second growth number counter to “0”.

Further, the control device 40 carries out a series of vapor phase growth (for example, in the case of the present embodiment, of the substrates S in one cassette 30 all the substrates S recognized by the above mapping). After that, the value of the growth number counter and the value of the inserted number counter are compared with each other, and it is determined whether or not both values match. That is, the control device 40 has a function as a determination device according to the present invention.

Further, as a result of the above judgment, the control device 40 controls the sounding device 80 and informs by sound if the count result of the growth number counter does not match the count result of the inserted number counter. And display device 5
By controlling 0, this is notified by a display.

The manufacturing system 100 is configured as described above.

The cassette 30 has a pair of side members 3 each formed in a plate shape, as shown in FIG. 4, for example.
1, 31 and the upper portions of both of the side members 31, 31 are mutually connected, for example, a plate-like ceiling member 32, and a lower connecting member 33 for connecting the lower portions of both side members 31, 31 to each other, By assembling each other with each other, the front side and the back side are opened respectively.

Support grooves 3 for supporting the substrate S are formed on the surfaces of the side members 31 facing each other.
A plurality of 1a and 31a are formed at predetermined intervals. In addition, the corresponding support groove 31 of both side surface members 31, 31
Since a and 31a face each other at the same vertical height, a plurality of storage slots for storing one substrate S are formed.

As shown in FIG. 4, since the cassette 30 has both the front side and the rear side opened and pulled out, the substrate S
Alternatively, simply by mounting the epitaxial wafer EPW, it is possible to take it in and out from the front side to the back side, or conversely from the back side to the front side.

Next, the method for manufacturing an epitaxial wafer according to the present invention will be described step by step. Actually, it is usual to manufacture the epitaxial wafer by using the load lock chamber 6 and the load lock chamber 7 together, but the operation related to the load lock chamber 6 and the operation related to the load lock chamber 7 are the same. , For simplicity,
Only the operation of the load lock chamber 6 will be described.

In order to manufacture an epitaxial wafer using the manufacturing apparatus 10, first, the substrate S is put into the cassette 30 in the load lock chamber 6. At this time, the elevating table 65 is raised to arrange the cassette 30 in the upper compartment 61 in advance. At this time, the upper compartment 61 and the lower compartment 6
The manufacturing apparatus 10 that flows into the upper compartment 61 by closing the gate valve 67 with the second valve 63 and opening the door 63.
The outside atmosphere should be prevented from flowing into the lower compartment 62 (or the transfer chamber 3 or the reaction chamber 1).

Then, the external cassette 35 accommodating a plurality of substrates S is arranged in front of the transfer device 20, while the door 63 of the load lock chamber 6 is opened. Then, the door open state detection switch 63s detects the open state of the door 63. Then, as shown in FIG. 5 or 6, the door opening signal switches to the output state (timing t1), and the control device 40 counts the number of substrates S loaded into the cassette 30 in the load lock chamber 6. And the value of the first inserted number counter is initialized to "0".

Next, by the transfer hand of the transfer device 20,
To remove the substrates S one by one from the external cassette 35,
The substrate S of the required number M is stored in the cassette 30 by sequentially repeating the operation of inserting the substrate S into the slot of the cassette 30 in the upper compartment 61 of the load lock chamber 6. At this time, every time one substrate S is stored in the cassette 30, a loading signal is output from the transfer device 20 to the control device 40. Each time this input signal is input, the control device 40 increments the counter value of the input number counter by "1" (FIG. 5 or 6). In addition, in FIG. 5 and FIG.
For simplicity, the number of input signals and reaction signals is 2 to 1
I'm keeping it low.

After the required number M of substrates S have been stored in the cassette 30, the door 63 of the load lock chamber 6 is closed. Then, as shown in FIG. 5 or FIG. 6, the door opening signal is switched to the non-output state (timing t2), and the control device 40 does not function as the inserted number counting device corresponding to the load lock chamber 6. Here, from the timing t1 to the timing t2, every time the substrate S is loaded into the cassette 30 in the load lock chamber 6, the count value of the first loading number counter is sequentially added, and as a result, at the timing t2 stage. The counter value is the required number M (same as the number of substrates S loaded).

Next, after decompressing the inside of the upper partial chamber 61, nitrogen is introduced to replace the inside of the upper partial chamber 61 with nitrogen.

Next, the cassette 30 in the upper compartment 61 is moved to the lower compartment 62. At the time of this movement, the substrate S in the cassette 30 is mapped. That is, in the process of lowering the cassette 30 on the elevating table 65 along with the lowering of the elevating table 65, light is blocked each time the substrate S passes the detection sensor 66. The position can be calculated.

The result of this mapping is displayed on the display screen 50a of the display device 50, for example, as shown in FIG. Specifically, on the display screen 50a, for example, cells 51 corresponding to the respective slots of the cassette 30 in the load lock chamber 6 (for example, 26 cells 51 for A to Z), and cassettes in the load lock chamber 7 are shown. A cell 52 corresponding to each slot of 30 (for example, 26 cells 52 for convenience of a to z) is displayed, and the cells 51 and 52 corresponding to the slot in which the substrate S is recognized by mapping are colored ( In FIG. 7, the colored state is represented by hatching).

Incidentally, this mapping may rarely be performed accurately although the cause is unknown. For example, in the case where the substrate S is actually accommodated in the slot, the recognition is omitted. There is. The number of substrates S obtained by this mapping is defined as the mapping number M ′.

In the manufacturing apparatus 10, vapor phase growth is performed only on the substrate S recognized by the above mapping. Therefore, it is not recognized by the above mapping, and "recognition is omitted".
Vapor phase growth is not performed on the substrate S that has become.

When the elevating table 65 is lowered and the cassette 30 on the elevating table 65 is completely contained in the lower partial chamber 62, the gate valve 67 is closed. And the lower part chamber 62
The gate valve 64 between the transfer chamber 3 and the transfer chamber 3 and the gate valve 5 between the transfer chamber 3 and the reaction chamber 1 are opened. Then, the gate valve open state detection switch 64s detects the open state of the gate valve 64. Then, as shown in FIG. 5 or FIG. 6, the gate valve open signal is switched to the output state (timing t3), the control device 40 becomes a state that functions as a growth number counting device corresponding to the load lock chamber 6, and The value of the growth number counter of 1 is initialized to "0".

In this state, a series of growth work is performed. That is, of the substrates S in the cassette 30 (in the lower compartment 62) of the load lock chamber 6, all the substrates S recognized by the above mapping are sequentially subjected to vapor phase growth in a single wafer method.

First, the handler 4 of the transfer chamber 3 extracts the first substrate S from the cassette 30 in the lower partial chamber 62, and the substrate S is placed on the susceptor 12 of the reaction chamber 1 via the transfer chamber 3. Place. Then, an epitaxial layer is vapor-phase grown on the main surface of the first substrate S.

In this vapor phase growth, the reaction gas is started to be supplied by the reaction gas supply device (not shown),
Be started. Therefore, at the start of the vapor phase growth, the reaction gas supply start detection switch 11 detects the start of the reaction gas supply, and the reaction gas supply start switch 11 outputs a reaction signal to the control device 40. In addition, the control device 4
At 0, based on the input of the reaction signal, the value of the first growth number counter is incremented by "1" to be "1" (see FIG. 5 or 6).

After that, when the epitaxial wafer EPW is manufactured by completing the vapor phase growth on the first substrate S, the epitaxial wafer EPW is unloaded from the reaction chamber 1 by the handler 4, and the lower partial chamber of the load lock chamber 6 is carried out. Of the slots of the cassette 30 in 62, the first substrate S is returned to the slot in which it was originally stored.

When the substrate S becomes an epitaxial wafer EPW and returns to the original slot, as shown in FIG. 8, for example, a cell 51 (eg E, G) corresponding to the slot is formed.
Cell 51, etc.) (in FIG. 8, for the sake of convenience, the color difference is represented by the shaded area).

After that, vapor phase growth is similarly performed on the second and subsequent substrates S. Then, similarly, each time vapor phase growth is performed, a reaction signal is input to the control device 40, and the value of the first growth number counter is sequentially incremented by "1" based on this input.

Thereafter, the cassette 30 in the load lock chamber 6
After completing the vapor phase growth on all the substrates S (a total of M ′) recognized by the above mapping among the substrates S in the
The gate valve 64 is closed. Then, as shown in FIG. 5 or FIG. 6, the gate valve open signal is switched to the non-output state (timing t4), and the control device 40 does not function as the growth number counting device corresponding to the load lock chamber 6. Here, from the timing t3 to the timing t4, the substrate S in the cassette 30 in the load lock chamber 6 is
On the other hand, every time the vapor phase growth is sequentially performed, the count value of the first growth number counter is sequentially added, resulting in the timing t.
At the stage of 4, the counter value is the mapping number M ′.

When the gate valve open signal is switched to the non-output state, the control device 40 compares the value of the first growth number counter with the value of the first charged number counter, and the load lock chamber 6 It is determined whether or not both counting results of the number of substrates S loaded into the cassette 30 in the cassette and the number of growth times of the substrates S in the cassette 30 match.

It is assumed that the above mapping is performed accurately, and as a result, the counter value of the first growth number counter (M ') and the value of the first insertion number counter (M'). If the same is true (in the case of FIG. 5), the control device 40 determines and recognizes that the value of the first inserted number counter and the value of the first growth number counter match. In this case, for example, the display device 50 may notify that the value of the first inserted number counter and the value of the first growth number counter match.

On the other hand, the above mapping is not performed accurately,
When any one of the substrates S in the cassette 30 in the load lock chamber 6 has failed to be recognized (in the case of FIG. 6), the vapor phase growth is performed on the substrate S having the unrecognized condition. Since there is no recognition, the
The value (M ') of the growth number counter is smaller than the value (M) of the first input number counter. In this case, the control device 40 determines that the value of the first insertion number counter does not match the value of the first growth number counter, recognizes it, and controls the sounding device 80 to sound that the values do not match. To let you know. Further, similarly, the control device 40 may control the display device 50 to notify the effect to the effect by displaying. Thereby, the operator can recognize that the number of substrates S loaded into the load lock chamber 6 does not match the number of growth times of the substrates S in the load lock chamber 6.

After closing the gate valve 64 between the transfer chamber 3 and the lower partial chamber 62, the inside of the lower partial chamber 62 is replaced with nitrogen, and then the lower partial chamber 62 and the upper partial chamber 61 are closed. The gate valve 67 is opened, and the lift table 65 is raised to lift the lift table 6
5 is moved to the upper partial chamber 61, the gate valve 67 is closed, and the door 63 is opened to open the cassette 30.
The epitaxial wafer EPW (and the substrate S if they do not match) is taken out.

According to the above-described embodiment, the number of substrates S loaded by the transfer device 20 into the cassette 30 arranged in the load lock chamber 6 (or 7) is counted, while the inside of the cassette 30 is counted. The number of times of performing the vapor phase growth on the substrate S is counted, and it is determined whether or not the counting results of the number of times of growth and the number of charged sheets are the same. Therefore, by any chance, the load lock chamber 6 (or 7) If the number of the substrates S put into the substrate does not match the number of the substrates S in the cassette 30 that have undergone vapor phase growth, this can be recognized.

Further, when they do not match, the sounding device 80 or the display device 50 informs the user of this fact.
A substrate S (hereinafter referred to as “substrate S” that has not been vapor-phase-grown by a series of vapor-phase growth operations despite being placed in the cassette 30)
Also called an unreacted substrate. Can be recognized by the worker. Therefore, for example, it is possible to prevent the unreacted substrate from being passed to the subsequent process without noticing it.

In the above embodiment, the epitaxial wafer manufacturing method is illustrated as the wafer processing method, and the epitaxial wafer manufacturing apparatus 10 is illustrated as the wafer processing apparatus. However, the present invention is not limited to this. Instead, for example, another vapor phase growth method or vapor phase growth apparatus may be used.

Further, the example in which the control device 40 is a device separate from the manufacturing device 10 and the transfer device 20 has been described, but the present invention is not limited to this, and the control device 40 may be the manufacturing device 10 or the transfer device. It may be a device integrated with the device 20.

Further, the transfer device 20 allows the cassette 30
An example has been described in which only the number of substrates S to be loaded into the substrate (the number of loaded substrates) is counted and the data of the storage location of each substrate S is not created. However, the data of the storage location of the substrates S to be loaded into the cassette 30 by the transfer device 20 is described. If it is also prepared and compared with the data of the storage place of the grown substrate S (for example, both data are displayed on the display screen 50a and the displayed data is visually compared to determine which substrate S is present). It is possible to make it easier to understand whether vapor phase growth has occurred.

[0074]

According to the wafer processing method and the wafer processing system of the present invention, the predetermined number of times the wafer in the cassette in the load lock chamber is processed in a single-wafer process and the wafer in the cassette in the load lock chamber is loaded. The number of wafers loaded into the load-lock chamber does not match the number of wafers that have been subjected to the prescribed processing, by determining whether or not both counting results of the number of loaded wafers match. In this case, this can be recognized. Further, according to the method for manufacturing an epitaxial wafer and the manufacturing system for an epitaxial wafer of the present invention, the number of vapor phase epitaxial growth performed on a single crystal substrate in the cassette in the load lock chamber in a single-wafer manner and the cassette in the load lock chamber By determining whether or not both counting results of the number of single crystal substrates to be input are the same, the number of single crystal substrates to be loaded into the load lock chamber and the single crystal that has been vapor phase epitaxially grown If the number of substrates does not match, this fact can be recognized. Therefore, it is not possible to throw the unprocessed material into the next step, and it is possible to prevent the loss of the single crystal substrate, and also to prevent the large loss of the processed single crystal substrate in a batch unit and the contamination in the heat treatment furnace. Can be prevented.

[Brief description of drawings]

FIG. 1 is a schematic schematic plan sectional view showing an epitaxial wafer manufacturing system according to the present invention.

FIG. 2 is a schematic side sectional view showing a manufacturing system for the epitaxial wafer of FIG.

FIG. 3 is a main block configuration diagram of the epitaxial wafer manufacturing system in FIG. 1.

FIG. 4 is a schematic perspective view showing an example of a permanent cassette in which single crystal substrates can be taken in and out from both sides.

FIG. 5 is a time chart showing a signal acquisition situation in the case where the counting results of the input number and the growth number match.

FIG. 6 is a time chart showing a signal acquisition situation in the case where the counting results of the input number and the growth number do not match.

FIG. 7 is a diagram showing a screen display (state before vapor phase growth) on the display unit.

FIG. 8 is a diagram showing a screen display of a display unit (a state in which vapor phase growth has been completed for some substrates S).

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 Reaction chamber (also an example of a processing chamber) 6,7 Load lock chamber 10 Epitaxial wafer manufacturing apparatus (also an example of a wafer processing apparatus) 20 Transfer device 30 Cassette 40 Control device (input number counting device, It functions as a growth frequency counting device and a determination device. 50 Display device (functions as a notification device) 80 Sounding device (functions as a notification device) 100 Epitaxial wafer manufacturing system (also an example of a wafer processing system. ) S substrate (single crystal substrate; also an example of a wafer)

Claims (8)

[Claims] 1. A plurality of wafers are accommodated in a cassette arranged in a load lock chamber of a wafer processing apparatus, the wafers in the load lock chamber are sequentially loaded into a processing chamber, and the loaded wafer is a single wafer type. In the wafer processing method of performing a predetermined process in, while counting the number of wafers to be loaded by the transfer device to the cassette placed in the load lock chamber, the number of times of the processing is counted, the number of times of the processing and A method for processing a wafer, comprising determining whether or not both counting results of the input number and the number of input sheets match. 2. The wafer processing method according to claim 1, wherein when the count results of both the number of times of processing and the number of charged sheets do not match, the fact is notified. 3. A load-lock chamber in which a cassette capable of storing a plurality of wafers is arranged, and a processing chamber for performing a predetermined process in a single-wafer manner on wafers sequentially loaded from the cassette in the load-lock chamber. A wafer processing device, a transfer device for sequentially loading and storing a plurality of wafers in a cassette placed in the load lock chamber, and a transfer device for loading the number of wafers loaded into the cassette by the transfer device. An input number counting device for counting, a processing number counting device for counting the number of times of the processing, and a number of times of the processing counted by the processing number counting device,
A wafer processing system, comprising: a determination device that determines whether or not both counting results of the input number counted by the input number counting device match. 4. If the result of the determination by the determination device indicates that the count results of the number of times of the processing and the number of inserted sheets do not match, a notification device is further provided to notify that effect. Wafer processing system described. 5. A single-wafer type in which a plurality of single crystal substrates are housed in a cassette arranged in a load lock chamber of an epitaxial wafer manufacturing apparatus, and the single crystal substrates are sequentially loaded into the reaction chamber from the cassettes in the load lock chamber. In the method of manufacturing an epitaxial wafer for manufacturing an epitaxial wafer by vapor-phase epitaxially growing a single crystal thin film on the main surface of the single crystal substrate, a single transfer unit is placed in the cassette arranged in the load lock chamber. While counting the number of crystal substrates input,
A method for manufacturing an epitaxial wafer, comprising: counting the number of times of growth for performing the vapor phase epitaxial growth and determining whether or not both counting results of the number of times of growth and the number of charged sheets match. 6. The method of manufacturing an epitaxial wafer according to claim 5, wherein when the counting results of the growth number and the input number do not match, the fact is notified. 7. A single-wafer single crystal on a main surface of a load lock chamber in which a cassette capable of accommodating a plurality of single crystal substrates is arranged, and a main surface of the single crystal substrate sequentially loaded from the cassette in the load lock chamber. An epitaxial wafer manufacturing apparatus including a reaction chamber for vapor phase epitaxial growth of a thin film, a transfer device for sequentially loading and storing a plurality of single crystal substrates in a cassette arranged in the load lock chamber, and the transfer device. A number-of-inputs counting device that counts the number of single-crystal substrates that are loaded into the cassette by the mounting device, a growth number counting device that counts the number of times of growth for performing the vapor phase epitaxial growth, and a growth number counting device. And a determination device for determining whether or not both counting results of the number of growths and the number of input sheets counted by the input sheet number counting device match. Epitaxial wafer manufacturing system characterized by. 8. If the result of the determination made by the determination device indicates that the counting results of the number of times of growth and the number of inserted sheets do not match, a notification device is further provided to notify that effect. Epitaxial wafer manufacturing system.