JP2002539621A - Wafer gripping fingers - Google Patents
Wafer gripping fingersInfo
- Publication number
- JP2002539621A JP2002539621A JP2000605000A JP2000605000A JP2002539621A JP 2002539621 A JP2002539621 A JP 2002539621A JP 2000605000 A JP2000605000 A JP 2000605000A JP 2000605000 A JP2000605000 A JP 2000605000A JP 2002539621 A JP2002539621 A JP 2002539621A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- groove
- edge
- holding finger
- wafer holding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004809 Teflon Substances 0.000 claims abstract description 6
- 229920006362 Teflon® Polymers 0.000 claims abstract description 6
- 238000012360 testing method Methods 0.000 claims description 8
- 239000002783 friction material Substances 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 4
- 230000002411 adverse Effects 0.000 abstract description 2
- 230000000717 retained effect Effects 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 41
- 238000010586 diagram Methods 0.000 description 9
- 238000005259 measurement Methods 0.000 description 6
- 239000004696 Poly ether ether ketone Substances 0.000 description 3
- 229920002530 polyetherether ketone Polymers 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000005484 gravity Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 101000836394 Homo sapiens Sestrin-1 Proteins 0.000 description 1
- 101000701286 Pseudomonas aeruginosa (strain ATCC 15692 / DSM 22644 / CIP 104116 / JCM 14847 / LMG 12228 / 1C / PRS 101 / PAO1) Alkanesulfonate monooxygenase Proteins 0.000 description 1
- 102100027288 Sestrin-1 Human genes 0.000 description 1
- 101000983349 Solanum commersonii Osmotin-like protein OSML13 Proteins 0.000 description 1
- 101001094026 Synechocystis sp. (strain PCC 6803 / Kazusa) Phasin PhaP Proteins 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68707—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a robot blade, or gripped by a gripper for conveyance
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B25—HAND TOOLS; PORTABLE POWER-DRIVEN TOOLS; MANIPULATORS
- B25J—MANIPULATORS; CHAMBERS PROVIDED WITH MANIPULATION DEVICES
- B25J15/00—Gripping heads and other end effectors
- B25J15/08—Gripping heads and other end effectors having finger members
- B25J15/10—Gripping heads and other end effectors having finger members with three or more finger members
- B25J15/103—Gripping heads and other end effectors having finger members with three or more finger members for gripping the object in three contact points
Landscapes
- Engineering & Computer Science (AREA)
- Robotics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
(57)【要約】 ウエーハ（１２）はエッジホルダ（１４、１６、１８）によりグリップされる。該エッジホルダは湾曲した、場合によりテフロンコーティングされた溝（３４）を有し、これの曲率半径は保持されるウエーハエッジのものより大きい。これにより、ウエーハの形状を歪めてウエーハパラメータの測定精度に悪影響を与える可能性のあるウエーハに掛かるストレスとトルクを最小化する。 (57) [Summary] The wafer (12) is gripped by the edge holders (14, 16, 18). The edge holder has a curved, optionally Teflon-coated groove (34), whose radius of curvature is greater than that of the retained wafer edge. This minimizes stress and torque on the wafer that can distort the shape of the wafer and adversely affect the accuracy of measuring the wafer parameters.
Description
【０００１】 ＜関連出願について＞ この出願は米国法３５、１１９（ｅ）に基づいて、１９９９年３月１６日出願
の仮出願６０／１２４，６４７号（これに開示されたものは、該引用をもってこ
こに組み込む）の優先権を主張する。<Related Application> This application is a provisional application No. 60 / 124,647 filed on Mar. 16, 1999, which is filed based on US Law 35, 119 (e). Hereby incorporated by reference).
【０００２】 ＜連邦政府の後援による研究開発に関する宣明＞ なし<Statement of Research and Development Sponsored by the Federal Government> None
【０００３】 ＜発明の分野及び背景＞ セミコンダクタやシリコンウエーハの計測において、フラットネスやバウ、ワ
ープといったウエーハ形状に関係する種々のパラメータが今日の産業において作
成されている。計測されるウエーハはエッジグリッパにより計測ステーションに
運ばれ、該エッジグリッパにより計測中は所定位置に保持される。普通３又はそ
れ以上のグリッパが使用される。<Field and Background of the Invention> In the measurement of semiconductors and silicon wafers, various parameters related to the wafer shape such as flatness, bow and warp are created in today's industry. The wafer to be measured is carried to the measuring station by the edge gripper, and is held at a predetermined position during the measurement by the edge gripper. Usually three or more grippers are used.
【０００４】 通常、グリッパはＶ字型の溝を有し、一般的に円形のエッジを有するウエーハ
は、各グリッパの該各溝の２つの表面が接触するように保持される。該溝は通常
ＰＥＥＫ（Polyetheretherketone）から作られる。そのため、ウエーハ支持ポイ
ントを過拘束し、ウエーハの面から向けられた力だけではなく各接触表面におい
て不確定の負荷を招く結果となる。その結果、予期しない応力やトルクがこれら
Ｖ溝内に保持されるウエーハにランダムに掛かることになる。Typically, the gripper has a V-shaped groove, and a wafer having a generally circular edge is held such that the two surfaces of each groove of each gripper are in contact. The groove is usually made from PEEK (Polyetheretherketone). This results in over-constraining the wafer support point, resulting in undefined loads at each contact surface as well as forces directed from the wafer surface. As a result, unexpected stress or torque is randomly applied to the wafer held in these V grooves.
【０００５】 そのため、このように発生した予想し得ない力はウエーハの形状に悪影響を与
える可能性があり、形状パラメータの測定エラーにつながる可能性がある。[0005] Therefore, the unexpected force generated as described above may adversely affect the shape of the wafer, and may lead to a measurement error of the shape parameter.
【０００６】 ＜発明の概要＞ 上記した従来のウエーハ握り溝の欠点は、本発明の溝により解決される。本発
明の溝は十分に大きな曲率半径の、典型的にはウエーハエッジのカーブより大き
な、曲げ形状を有し、これによりエッジの１つの部分、区域、点における接触が
生ずる。該接触区域或いは点はまた中心に位置し、そのためウエーハ形状の変形
を生じさせる可能性のある応力の発生を最小にできる。該ウエーハ溝はテフロン
製とするか或いはテフロンコーティングすることが可能であり、この場合更にウ
エーハに掛かる変形力を小さくすることが可能である。<Summary of the Invention> The above-mentioned drawbacks of the conventional wafer grip groove are solved by the groove of the present invention. The grooves of the present invention have a bent shape with a sufficiently large radius of curvature, typically greater than the curve of the wafer edge, which results in contact at one portion, area, or point of the edge. The contact area or point is also centrally located, thus minimizing the generation of stresses that can cause wafer shape deformation. The wafer groove can be made of Teflon or coated with Teflon, and in this case, the deformation force applied to the wafer can be further reduced.
【０００７】 ＜好適な実施例の詳細な説明＞ 図１はウエーハ１２を示し、これは典型的にはシリコン等の半導体物質である
。該ウエーハ１２は３つのフィンガ又はグリッパ１４、１６、１８により支持さ
れている。該フィンガ又はグリッパ１４、１６、１８はウエーハ搬送ハンドル（
図示せず）の一部であっても良い。或いはウエーハテストステーションにおいて
ウエーハを垂直又は水平方向に支持するための支持装備の一部であっても良い。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT FIG. 1 shows a wafer 12, which is typically a semiconductor material such as silicon. The wafer 12 is supported by three fingers or grippers 14,16,18. The fingers or grippers 14, 16, 18 are provided with wafer transfer handles (
(Not shown). Alternatively, it may be a part of supporting equipment for vertically or horizontally supporting a wafer at a wafer test station.
【０００８】 従来型のフィンガ又はグリッパ１４、１６、１８を図２ａ〜ａｃに示す。ここ
に示されているように該フィンガは端部２２を備えたボディ２０を有する。端部
２２は通常はＰＥＥＫ製であり、ウエーハ１２が支持される端部において溝２４
を備えている。図２ｂに示すように溝２４は２つの物理的に離れている点２６、
２８においてウエーハ１２に接触する。３つのフィンガを用いると、ウエーハを
保持する接触点は６になり、ウエーハにとって過拘束（over constrain）の状態
となり、各点の力、トルク、応力等を精度良く制御できなくなる。該力はウエー
ハの面から追加的に直接に向けられる。その結果、場合により或いは全ての場合
、ウエーハは力とトルクによる変形を受け、誤った寸法計測となる可能性がある
。[0008] Conventional fingers or grippers 14, 16, 18 are shown in Figures 2a-ac. As shown here, the finger has a body 20 with an end 22. The end 22 is usually made of PEEK and has a groove 24 at the end where the wafer 12 is supported.
It has. 2b, the groove 24 has two physically separated points 26,
At 28, the wafer 12 is contacted. When three fingers are used, the number of contact points for holding the wafer is 6, and the wafer is in an over-constrained state, so that it is impossible to accurately control the force, torque, stress, and the like at each point. The force is additionally directed directly from the surface of the wafer. As a result, in some or all cases, the wafer may be deformed by force and torque, resulting in incorrect dimensional measurements.
【０００９】 図３ａ〜３ｃにフィンガ３２と溝３４を示す。溝３４は湾曲形状であり、その
曲率半径はウエーハ１２のエッジの曲率半径よりも大きくなっている。該ウエー
ハは単一のセントラルポイント３６においてのみ接触し、該セントラルポイント
３６は実際には、不定形の小さな点ではなく、むしろ定形サイズの１範囲又は部
分となる。この限定された単一の接触点又は範囲がウエーハに掛かる変形力を極
小化し、ウエーハの計測におけるより高い精度に導く。FIGS. 3 a to 3 c show the fingers 32 and the grooves 34. The groove 34 has a curved shape, and the radius of curvature is larger than the radius of curvature of the edge of the wafer 12. The wafer contacts only at a single central point 36, which is not actually a small point of irregular shape, but rather a range or part of a regular size. This limited single point of contact or range minimizes the deformation forces on the wafer and leads to higher accuracy in wafer measurement.
【００１０】 特にウエーハの面からの力等の力により導かれる摩擦の軽減を促進するために
、前記フィンガ３２は、テフロンやその他の低摩擦材質をコーティングした溝を
有することも可能である。該フィンガ自体を前記材質で構成する事も可能である
。The fingers 32 can also have grooves coated with Teflon or other low friction material to facilitate the reduction of friction induced by forces, particularly from the surface of the wafer. The finger itself can be made of the above material.
【００１１】 図４にウエーハと溝３４との接触部分３６を更に詳細に示す。図示から明らか
なように、ウエーハ上の力は全てウエーハの面上にあり、そのためウエーハ変形
を生じさせる可能性のある力は生じないか或いは小さい。図２ａ〜２ｃに示す様
な「Ｖ」字型の溝では、接触点がウエーハの面からの力を及ぼし、ウエーハの変
形を生じさせ得る力を生じさせる。FIG. 4 shows the contact portion 36 between the wafer and the groove 34 in more detail. As can be seen, all of the forces on the wafer are on the surface of the wafer, so that no or small forces are likely to cause wafer deformation. In a "V" shaped groove as shown in FIGS. 2a-2c, the contact points exert a force from the surface of the wafer, producing a force that can cause deformation of the wafer.
【００１２】 図５は、溝の半径をエッジ、ｒｅと同一から２倍或いはそれ以上に変化させた
場合の、剪断及び面における力の結果のグラフである。剪断力は溝の曲率半径の
拡大とともに実質的に低下することが明らかである。FIG. 5 is a graph of shear and surface force results when the groove radius is changed from the same as the edge, re, by a factor of two or more. It is clear that the shear force decreases substantially with increasing radius of curvature of the groove.
【００１３】 図６に代表的な計測装備における、本発明のエッジ保持溝の使用方法を示す。
図示するようにウエーハ１２は計測装備の一部であるグリッパ３２内に置かれ、
該装置に応じて水平或いは垂直に支持される。垂直方向の場合、重力は同様にウ
エーハの面にあるようにウエーハを保持するため、これにより本発明の効果が増
進する。ウエーハは１又はそれ以上のプローブ４０による測定のために支持され
、該プローブ４０はワープ、バウ、フラットネス等を含む所望の形状パラメータ
を検出する。FIG. 6 shows a method of using the edge holding groove of the present invention in a typical measuring device.
As shown, the wafer 12 is placed in a gripper 32 which is a part of the measuring equipment,
It is supported horizontally or vertically depending on the device. In the vertical direction, gravity enhances the effect of the present invention because gravity also holds the wafer as if it were at the plane of the wafer. The wafer is supported for measurement by one or more probes 40, which detect desired shape parameters, including warp, bow, flatness, and the like.
本発明の特質は詳細な説明と共に下記添付図面により説明される。 The features of the present invention will be described by the following accompanying drawings together with the detailed description.
【図１】一連のグリッパにより所定位置に保持されるウエーハの図。FIG. 1 is a view of a wafer held in place by a series of grippers.
【図２ａ】従来のグリッパの図。FIG. 2a is a diagram of a conventional gripper.
【図２ｂ】従来のグリッパの図。FIG. 2b is a diagram of a conventional gripper.
【図２ｃ】従来のグリッパの図。FIG. 2c is a diagram of a conventional gripper.
【図３ａ】本発明のグリッパの図。FIG. 3a is a diagram of the gripper of the present invention.
【図３ｂ】本発明のグリッパの図。FIG. 3b is a diagram of the gripper of the present invention.
【図３ｃ】本発明のグリッパの図。FIG. 3c is a diagram of the gripper of the present invention.
【図４】本発明のグリッパ溝の設計における考察を示す図。FIG. 4 is a diagram showing considerations in designing a gripper groove according to the present invention.
【図５】本発明のグリッパ溝の設計における考察を示す図。FIG. 5 is a diagram showing a consideration in designing a gripper groove of the present invention.
【図６】ウエーハのテストに用いられる本発明のグリッパの図。FIG. 6 is a diagram of the gripper of the present invention used for testing a wafer.
───────────────────────────────────────────────────── フロントページの続き Ｆターム(参考） 3C007 AS01 CY13 DS02 ES04 EV07 EV22 LV06 MS30 MT09 NS13 4M106 AA01 CA47 DJ02 5F031 CA02 FA01 FA07 GA13 GA15 HA24 PA13 PA26 ──────────────────────────────────────────────────続 き Continued on the front page F term (reference) 3C007 AS01 CY13 DS02 ES04 EV07 EV22 LV06 MS30 MT09 NS13 4M106 AA01 CA47 DJ02 5F031 CA02 FA01 FA07 GA13 GA15 HA24 PA13 PA26
Claims (12)
ンガであって、 前記ウエハのエッジを保持するための形状を有する溝を備えたグリッパフィン
ガ、を有し、 該溝が前記ウエーハのエッジと１つの部分でのみ接触するように形状付けられ
ている、 ことを特徴とするウエーハ保持フィンガ。1. A wafer holding finger used for testing or transporting a semiconductor wafer, comprising: a gripper finger having a groove having a shape for holding an edge of the wafer, wherein the groove is provided on the wafer. A wafer holding finger shaped to contact the edge only in one portion.
径で曲げられ、これによりウエーハに１つの部分のみで接触する、 請求項１に記載のウエーハ保持フィンガ。2. The wafer holding finger according to claim 1, wherein the shape of the groove is bent with a radius of curvature larger than the radius of curvature of the wafer edge, so that the wafer contacts only one portion of the wafer.
ハ保持フィンガを３又はそれ以上有する、 ことを特徴とするテスト装置。6. A test apparatus comprising three or more wafer holding fingers according to claim 1, which hold the wafer for testing.
ンガであって、 前記ウエハのエッジを保持するための形状を有する溝を備えたグリッパフィン
ガ、を有し、 該溝の形状が前記ウエーハを保持する際に、該ウエーハとの接触から生じる力
を該ウエーハの面内にのみ生じさせる、 ことを特徴とするウエーハ保持フィンガ。7. A wafer holding finger used for testing or transporting a semiconductor wafer, comprising: a gripper finger having a groove having a shape for holding an edge of the wafer; A wafer holding finger, wherein a force generated from contact with the wafer is generated only in the plane of the wafer when the wafer is held.
げられ、これによりウエーハに１つの部分のみで接触する、 請求項７に記載のウエーハ保持フィンガ。8. The wafer holding finger according to claim 7, wherein the groove is bent with a radius of curvature larger than a radius of curvature of a wafer edge, thereby contacting the wafer at only one portion.
ーハ保持フィンガを３又はそれ以上有する、 ことを特徴とするテスト装置。12. A test apparatus comprising three or more wafer holding fingers according to claim 7, which hold the wafer for testing.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12464799P | 1999-03-16 | 1999-03-16 | |
| US60/124,647 | 1999-03-16 | ||
| PCT/US2000/006895 WO2000054941A1 (en) | 1999-03-16 | 2000-03-16 | Wafer gripping fingers |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2002539621A true JP2002539621A (en) | 2002-11-19 |
Family
ID=22416053
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000605000A Pending JP2002539621A (en) | 1999-03-16 | 2000-03-16 | Wafer gripping fingers |
Country Status (3)
| Country | Link |
|---|---|
| EP (1) | EP1105257A1 (en) |
| JP (1) | JP2002539621A (en) |
| WO (1) | WO2000054941A1 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2006098211A1 (en) | 2005-03-16 | 2006-09-21 | Shin-Etsu Handotai Co., Ltd. | Gripper and method for holding semiconductor wafer, and shape measuring apparatus |
| JP2009141081A (en) * | 2007-12-05 | 2009-06-25 | Sumco Corp | Semiconductor wafer surface inspecting apparatus |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4603897A (en) * | 1983-05-20 | 1986-08-05 | Poconics International, Inc. | Vacuum pickup apparatus |
| US4717190A (en) * | 1986-10-30 | 1988-01-05 | Witherspoon Linda L | Wafer handling and placement tool |
| US4960298A (en) * | 1988-12-20 | 1990-10-02 | Texas Instruments Incorporated | Semiconductor wafer pick-up device |
| IT1228105B (en) * | 1988-12-20 | 1991-05-28 | Sgs Thomson Microelectronics | CLAMP FOR HANDLING, ADVANTAGEOUSLY ROBOTIC, OF ONE OR MORE SLICES OF SILICON AND / OR A SUPPORT OF SUCH SLICES |
| KR0152324B1 (en) * | 1994-12-06 | 1998-12-01 | 양승택 | Semiconductor wafer carrier apparatus |
| US5765890A (en) * | 1996-10-03 | 1998-06-16 | Memc Electronic Materials, Inc. | Device for transferring a semiconductor wafer |
-
2000
- 2000-03-16 EP EP00916400A patent/EP1105257A1/en not_active Withdrawn
- 2000-03-16 WO PCT/US2000/006895 patent/WO2000054941A1/en not_active Application Discontinuation
- 2000-03-16 JP JP2000605000A patent/JP2002539621A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2006098211A1 (en) | 2005-03-16 | 2006-09-21 | Shin-Etsu Handotai Co., Ltd. | Gripper and method for holding semiconductor wafer, and shape measuring apparatus |
| JP2006261271A (en) * | 2005-03-16 | 2006-09-28 | Shin Etsu Handotai Co Ltd | Gripper for holding semiconductor wafer and holding method, and shape measuring device |
| US7779554B2 (en) | 2005-03-16 | 2010-08-24 | Shin-Etsu Handotai Co., Ltd. | Holding gripper and holding method for semiconductor wafer and shape measuring apparatus |
| JP4671724B2 (en) * | 2005-03-16 | 2011-04-20 | 信越半導体株式会社 | Semiconductor wafer holding gripper, holding method, and shape measuring apparatus |
| KR101235324B1 (en) * | 2005-03-16 | 2013-02-19 | 재팬 에이디이 리미티드 | Gripper and method for holding semiconductor wafer, and shape measuring apparatus |
| JP2009141081A (en) * | 2007-12-05 | 2009-06-25 | Sumco Corp | Semiconductor wafer surface inspecting apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2000054941A1 (en) | 2000-09-21 |
| WO2000054941A9 (en) | 2001-11-29 |
| EP1105257A1 (en) | 2001-06-13 |
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