JP2002525851A5 - - Google Patents
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- Publication number
- JP2002525851A5 JP2002525851A5 JP2000570829A JP2000570829A JP2002525851A5 JP 2002525851 A5 JP2002525851 A5 JP 2002525851A5 JP 2000570829 A JP2000570829 A JP 2000570829A JP 2000570829 A JP2000570829 A JP 2000570829A JP 2002525851 A5 JP2002525851 A5 JP 2002525851A5
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP98203054 | 1998-09-11 | ||
| EP98203054.6 | 1998-09-11 | ||
| PCT/EP1999/006416 WO2000016392A1 (en) | 1998-09-11 | 1999-08-31 | Method of manufacturing a semiconductor device with a bipolar transistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2002525851A JP2002525851A (ja) | 2002-08-13 |
| JP2002525851A5 true JP2002525851A5 (US20050276830A1-20051215-C00018.png) | 2006-11-02 |
Family
ID=8234106
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000570829A Pending JP2002525851A (ja) | 1998-09-11 | 1999-08-31 | バイポーラトランジスタを有する半導体デバイスを製造する方法 |
Country Status (5)
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002531947A (ja) * | 1998-11-13 | 2002-09-24 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | バイポーラトランジスタからなる半導体装置の製造方法 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0378794A1 (en) * | 1989-01-18 | 1990-07-25 | International Business Machines Corporation | Vertical bipolar transistor structure and method of manufacturing |
| US5117271A (en) * | 1990-12-07 | 1992-05-26 | International Business Machines Corporation | Low capacitance bipolar junction transistor and fabrication process therfor |
| US5106767A (en) * | 1990-12-07 | 1992-04-21 | International Business Machines Corporation | Process for fabricating low capacitance bipolar junction transistor |
| JP2582519B2 (ja) * | 1992-07-13 | 1997-02-19 | インターナショナル・ビジネス・マシーンズ・コーポレイション | バイポーラ・トランジスタおよびその製造方法 |
| DE19609933A1 (de) * | 1996-03-14 | 1997-09-18 | Daimler Benz Ag | Verfahren zur Herstellung eines Heterobipolartransistors |
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1999
- 1999-08-31 WO PCT/EP1999/006416 patent/WO2000016392A1/en active IP Right Grant
- 1999-08-31 EP EP99969180A patent/EP1048066B1/en not_active Expired - Lifetime
- 1999-08-31 DE DE69935967T patent/DE69935967T2/de not_active Expired - Lifetime
- 1999-08-31 JP JP2000570829A patent/JP2002525851A/ja active Pending
- 1999-09-10 US US09/393,944 patent/US6150224A/en not_active Expired - Lifetime
