JP2002373614A - Ion implantation apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an ion implantation apparatus capable of preventing an internal discharge at an initial stage of an ion beam extraction process. SOLUTION: In an extraction procedure of an ion beam, an excitation current necessary under objective device operating conditions for generating a predetermined magnetic field for each apparatus is fed to a mass separator, a Q-lens, and a 30 deg. deflection system, and objective pre-acceleration and post-acceleration voltages are respectively applied by raising voltages of pre-acceleration and post-acceleration power sources (step 101). In step 102, an excitation current corresponding to strength of the magnetic field to be generated is fed by an ion source coil, and O2 gas is introduced as the gas for ion generation. In step 103, plasma is ignited and ions are generated by controlling a microwave supply part 31 and introducing microwave into a plasma chamber 1b.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a charged particle accelerator for accelerating ions and electrons, and more particularly to an ion implanter for implanting an ion beam into a silicon wafer as a semiconductor substrate.

[0002]

2. Description of the Related Art A conventional technique will be described with reference to FIGS.

FIG. 2 shows a general high current oxygen ion implantation apparatus.
1 shows the overall configuration of the device. This ion implanter
As a body, a size of about 4m in width, 7m in length and 3m in height
Have. The ion source 1 has a plasma chamber,
Application of magnetic field by coil 1a and gas not shown
And the beam gas species O from the microwave source _Two
Gas and microwaves are introduced to create a plasma
You. By the pre-acceleration power supply 2, this ion source 1
0 kV, and the voltage is used as an extraction voltage.
An ion beam is extracted from the ion source 1. Pulled out
The focused ion beam is targeted by the mass separator 3.
Ions (here, O +) and unnecessary ions O_Two+ Minutes
Separated.

The electromagnetic intensity B applied to the mass separator 3
Is calculated by the following equation.

B = 1.44 / r · √MV / n (1) where, r: deflection radius M: mass number V: pre-stage acceleration voltage (for example, 50 kV) n: ion valence In ion implantation apparatus Is given the above V, M, n, and r, from which B is determined. When the magnetic field strength B required to obtain the target ions is determined, for example, FIG.
Based on the relationship between the exciting current supplied to the electromagnet and the magnetic field strength generated by the electromagnet as shown in FIG. 5, the excitation to be applied to the electromagnet provided in the mass separator 3 in order to obtain the magnetic field strength B The current I is obtained.

The ion beam that has passed through the mass separator 3 is
The so-called REDBO that is electrically insulated from the outside
It is accelerated by an acceleration tube 6 included in X5. The REDBOX 5 including the accelerating tube 6 is boosted by the post-acceleration power supply 4. The accelerated ion beam is beam-shaped by the Q lens 7, and unnecessary beams are cut off by the 30 ° deflector 8, similarly to the mass separator 3. Finally, only the beam that has passed through the deflector 8 is
The wafer 9 is irradiated.

[0007] The Si wafer 9 is the substrate transfer robot 1
0d, the sample is carried into the end station 10 from the outside, and is held by the sample holder 10b rotatable in the arrow direction in the figure. Reference numeral 10c denotes a beam damper for attenuating a beam that has not been injected into the Si wafer 9 and has flowed behind it.

In the conventional ion beam extraction procedure, for example, as shown in FIG. 4, a preset required magnetic field is first applied to the mass separator 3, the Q lens 7, and the 30 ° deflector 8, and the ion source 1 To generate plasma (step 40).
1) After that, an ion beam was extracted by applying a pre-stage and post-stage acceleration voltage (step 402).

[0009]

As shown in FIG. 5, a certain period of time is usually required for boosting the applied voltage by the currently used pre-stage and post-stage acceleration power supplies. For example, in a high-frequency switching control power supply used as an acceleration power supply, it takes some time to charge a capacitor of an LC circuit included in the device. Further, if the voltage applied by the acceleration power supply is to be rapidly increased, the applied voltage becomes unstable, and the voltage value may oscillate. In such a case, voltage control becomes difficult, and further, other electric elements are adversely affected.

Therefore, in the initial stage of the normal step-up process, the acceleration voltage V is lower than in the normal operation.

For this reason, as can be seen from the above equation (1), in a device to which a constant magnetic field intensity B has already been applied, for example, in the mass separator 3, the deflection radius r of the ion beam passing through the inside of the device is determined during normal operation. Smaller than. For example, in the mass separator 3, as shown in FIG.
May collide with the vacuum vessel wall surface 14 of the mass separator 3.

The collision of the ion beam is performed by applying a magnetic field of 30 ° to deflect the beam.
The same may occur in the deflector 8 or in a device that is arranged on the beam line and generates at least one of a magnetic field and an electric field for setting a beam passing through the line to a target state.

When the ion beam collides with a metal surface such as the inner wall of a vacuum vessel, the ion beam is reflected not only on the metal surface but also as shown in FIG. Secondary electrons 12 and sputtered atoms 13 are emitted. Of these, the secondary electrons are accelerated in the opposite direction by the pre-acceleration voltage or the post-acceleration voltage and flow backward, colliding with the ion source electrode, the acceleration electrode, and the like, causing an internal load short circuit.

The occurrence of such an internal load short-circuit did not cause a serious problem in an accelerator having a small ion current value. However, in a high-current ion implantation apparatus of several hundred mA / several hundred kV used in recent ion implantation processing, this phenomenon is particularly noticeable and poses a problem.

Further, in the ion implantation apparatus which is provided with control means for each power supply and each current supply source for executing the above-described ion beam extraction procedure and which can perform automatic operation, if the internal load short circuit occurs, The control means sets the acceleration voltage to 0 in order to protect the power supply, and automatically starts up again. Therefore, the occurrence of the internal load short-circuit causes a reduction in the operation rate of the ion implantation apparatus and a reduction in the wafer processing capacity.

Further, since the ion beam collides with the vacuum vessel, the constituent materials of the vacuum vessel, such as Fe and Al, are sputtered and injected into the Si wafer 9 as impurities, which may cause wafer contamination. .

The present invention has been made in view of the above points, and in an apparatus for accelerating a charged particle, an inner wall of an apparatus of the apparatus, which may be generated in an initial stage of a process of extracting a charged particle beam, may be provided. It is an object of the present invention to provide a charged particle accelerator capable of preventing or reducing an internal load short circuit (internal discharge) caused by collision with a charged particle beam.

More specifically, in an ion implantation apparatus for implanting ions as charged particles into a substrate, as described above, factors such as a decrease in the operation rate of the apparatus, a decrease in the wafer processing capability, and the occurrence of impurity implantation into the wafer. It is an object of the present invention to provide an ion implantation apparatus capable of preventing or reducing the occurrence of internal discharge at an initial stage of an ion beam extraction process.

[0019]

To achieve the above object, the present invention provides a charged particle accelerating apparatus including a charged particle generating source for generating charged particles, and an accelerating unit for accelerating the generated charged particles. In, at least one device arranged along the beam line of the device, and generates at least one of a magnetic field and an electric field of the intended intensity, in order to change the beam of the charged particles to a specific state, The at least one device, the charged particle generation source, and a control unit for controlling the acceleration unit, the control unit has a control mode for extracting the charged particles, the control mode Controlling the accelerating unit to generate a target accelerating electric field, and controlling the one or more devices to generate the target fields, and then controlling the charged particle source to control the charged particles. The cause.

More specifically, the charged particle accelerator of the present invention can be applied to an ion implanter that uses ions as charged particles and implants accelerated ions into a substrate such as a semiconductor.

According to another aspect of the present invention, there is provided a charged particle accelerating apparatus including a charged particle generating source for generating charged particles, and an accelerating unit for accelerating the generated charged particles. One or more devices that are arranged along the beam line and generate at least one of a magnetic field and an electric field of a desired intensity in order to change the beam of the charged particles to a specific state; Equipment, the charged particle generation source, and a control unit for controlling the acceleration unit, the control unit includes a control mode for controlling the trajectory of the charged particles, in the control mode, The accelerating unit generates an accelerating electric field and the one or more devices generate a field. In this case, each of the one or more devices is controlled so that According to a predetermined relational expression, the intensity of the field generated by the device is adjusted according to a change from the steady state of the accelerating electric field strength, and the predetermined relational expression is a voltage of the power supply. And defines the correspondence between the field intensity required for the charged particles accelerated by the accelerating electric field corresponding to the voltage to move without colliding with the inner wall surface of the vacuum vessel forming the beam line. is there.

In the control mode for controlling the trajectory of charged particles according to the present invention, for example, in an ion implantation apparatus, the acceleration unit passes through a boosting period in which the voltage is increased with time, and generates a voltage for generating a target acceleration electric field. Can be applied to the case where a power supply that generates In this case,
After controlling the ion source to generate charged particles, the control mode is applied to control the trajectory of the ion beam during the pressure-increasing period to prevent the ion beam from colliding with the vacuum vessel wall.

In order to achieve the above object, a charged particle accelerator according to the present invention is disposed along a beam line of the device, and changes the charged particle beam to a specific state. And at least one device that generates at least one of a magnetic field and an electric field having a predetermined intensity, and a vacuum container that forms the beam line, wherein the vacuum container has an acceleration electric field intensity by the acceleration unit at a steady state value. And at least one trap means for generating at least one of an electric field and a magnetic field for restricting the movement of the charged particles generated by the collision when the charged particle beam collides with the beam.

As the trapping means, for example, in an ion implantation apparatus, 2 generated by collision of an ion beam.
A suppressor electrode to which a negative voltage for trapping secondary electrons is applied can be used.

[0025]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of an ion implantation apparatus to which the present invention is applied will be described below with reference to FIGS.

As shown in FIGS. 2 and 8, for example, the ion implantation apparatus of this embodiment includes an ion source 1, a mass separator 3,
It has an acceleration tube 6, a Q lens 7, a 30 ° deflector 8, and an end station 10. Note that these components are the same as those of the conventional ion implantation apparatus shown in FIG. 2 and the description of the operation is omitted.

The ion source 1 includes a plasma chamber 1b for generating ions, an ion source coil 1a for applying a magnetic field for generating plasma in the plasma chamber 1b, and a voltage for extracting generated ions from the plasma chamber 1b. (A pre-acceleration voltage). In the end station 10, a sample holder 10b holding a plurality of substrates (Si wafers) 9 to be ion-implanted.
And an actuator 10a for rotating the sample holder 10b to move each substrate to the irradiation position of the ion beam.

The ion implantation apparatus of this embodiment further includes
Included in the leading-edge acceleration power supply 2 and the latter-stage acceleration power supply 4 for supplying an acceleration voltage to be applied to the extraction electrode 1c and the acceleration tube 6, respectively, the ion source coil 1a, the mass separator 3, the Q lens 7, and the 30 ° deflector 8 respectively. Excitation current supply units 21, 23, 27, 28 for supplying an excitation current to the electromagnet, a microwave supply unit 31 for supplying a microwave for generating plasma to the plasma chamber 1 b, and a gas for generating ions for generating plasma. It has a gas supply unit 32 for supplying to the chamber 1b and an actuator driving unit 33 for driving the substrate moving actuator 10a.

The ion implantation apparatus of this embodiment further includes
Pre-acceleration power supply 2, post-acceleration power supply 4, excitation current supply unit 2
1, 23, 27, 28, a control unit 41 for controlling the operations of the microwave supply unit 31, the gas supply unit 32, and the actuator driving unit 33, respectively, and a control processing mode (control mode) performed by the control unit 41. A storage unit 42 for storing a corresponding processing program. The storage unit 42 stores, for example, a program defining a processing procedure for extracting an ion beam and a program defining a processing procedure for generating ions as a processing program corresponding to the control mode.

Here, not only the applied voltage values of the pre-acceleration power supply 2 and the post-acceleration power supply 4 but also the excitation current supply unit 2
The current value supplied by each of 3, 27, and 28 is variable and can be controlled by the control unit 41. Further, the control unit 41 supplies a predetermined exciting current to the ion source coil 1 a by the exciting current supply unit 21, generates a microwave by the microwave supply unit 31, and generates an ion by the gas supply unit 32. It controls at least the gas introduction operation.

Next, a control mode used in the ion implantation apparatus of this embodiment will be described.

In the present embodiment, for example, a procedure for extracting an ion beam as shown in FIG. 1 is executed as a control mode in order to suppress the frequent occurrence of internal discharge generated when extracting an ion beam.

In the procedure for extracting the ion beam according to the present embodiment, first, the mass separator 3, the Q lens 7, and the
The 30 ° deflector 8 supplies the excitation current supply units 21 and 2 with an excitation current required for generating a predetermined magnetic field required for each device under the target device operating conditions.
3, 27, and 28, and the pre-acceleration power supply 2 and the post-acceleration power supply 4 are stepped up to supply the desired pre-acceleration voltage and post-acceleration voltage to the REDBOX 5 including the extraction electrode 1c and the acceleration tube 6 (see FIG. ) (Step 101).

Thereafter, a plasma is generated in the ion source 1 to extract an ion beam. That is, in step 102, the exciting current corresponding to the intensity of the magnetic field to be generated by the ion source coil 1a is supplied from the exciting current supply unit 21 and the O ₂ gas is introduced from the gas supply unit 32 as a gas for generating ions. . Finally, step 1
At 03, the microwave is supplied to the plasma chamber 1b by controlling the microwave supply unit 31, thereby igniting the plasma and generating ions.

According to the above-described processing procedure, ions are generated in a state where a target acceleration electric field and magnetic field which are set in advance are applied along the beam line. At the point in time), ions generated in the plasma chamber 1 for the first time can move along a predetermined trajectory, that is, a beam line. Therefore, it is possible to reduce or prevent the internal discharge (internal load short-circuit) caused by the collision of the ion beam with the inner wall of the vacuum vessel, which has occurred in the ion extraction procedure according to the prior art.

Further, in the present embodiment, as a procedure for generating a plasma of the ion source 1, a microwave is first introduced after applying a magnetic field by the ion source coil 1a and introducing an O ₂ gas which is a kind of ion source gas. Thus, more stable plasma ignition is possible.

Next, another example of an ion beam extraction procedure that can be used in the ion implantation apparatus of this embodiment will be described with reference to FIG.

In the procedure of this example, as shown in FIG. 9, first, plasma is generated in the ion source 1 (step 9).
01). This processing is substantially the same as the processing of steps 102 and 103 in the processing of FIG.

Next, in step 902, in order to extract the generated ions, a magnetic field is generated by the mass separator 3, the Q lens 7, and the 30 ° deflector 8, and the magnetic field is accelerated by the extraction electrode 1c and the acceleration tube 6. Generate an electric field.

However, in this example, during the boosting period in which the applied voltages of the pre-acceleration power supply 2 and the post-acceleration power supply 4 rise with time (see FIG. 5), the voltage changes according to the temporal change of the pre-acceleration voltage and the post-acceleration voltage. Then, control for adjusting the magnetic field intensity applied by the mass separator 3, the Q lens 7, and the 30 ° deflector 8 is performed.

Thus, in the ion beam extraction procedure of the present embodiment, ions accelerated according to the voltage during the boosting period that is lower than the acceleration voltage at the time of steady operation are supplied to the inside of the vacuum vessel constituting the beam line of the apparatus. This prevents collision with the wall.

More specifically, the control unit 41 detects the applied voltage of the pre-acceleration power supply 2 and the post-acceleration power supply 4 and calculates the r (deflection radius) of the ions based on the detected applied voltage and the above equation (1). Of the magnetic field required to make the same as at the time of the steady applied voltage. Further, as shown in FIG.
From the relationship between the intensity of the magnetic field generated by the electromagnet of each device and the excitation current required for the device, an excitation current I required to obtain the magnetic field intensity B is obtained, and this excitation current I is supplied to the corresponding device. So that each excitation current supply unit is controlled.

For example, ions accelerated only by the voltage applied by the pre-acceleration power supply 2 pass through the mass separator 3. For this purpose, the magnetic field strength of the mass separator 3 is determined by considering only the pre-acceleration voltage. For each device located downstream of the accelerating tube 6, the magnetic field intensity to be generated by each device is determined by considering both the pre-acceleration voltage and the post-acceleration voltage in consideration of the acceleration voltage.

According to the ion beam extraction procedure of this embodiment, the intensity of the magnetic field applied to the mass separator 3, the Q lens 7, the 30 ° deflector 8 and the like is adjusted according to changes in the pre-acceleration voltage and the post-acceleration voltage. be able to. For this reason, during the boosting period at the time of startup of the pre-acceleration power supply 2 and the post-acceleration power supply 4, the extracted ion beam collides with the inner wall surface of the vacuum vessel forming the beam line, thereby suppressing the occurrence of internal discharge or It is possible to prevent it.

Another embodiment of the ion implantation apparatus according to the present invention will be described with reference to FIG.

In the present embodiment, in the ion implantation apparatus having the configuration shown in FIG. 2, in the step of boosting the pre-acceleration power supply 2 and the post-acceleration power supply 4 until the target voltage is reached, the extracted ion beam is used. Suppressors are provided on the walls of the vacuum vessel that are considered to collide. This suppressor traps secondary electrons generated by the collision.

For example, in the mass separator 3, as described above, during the step-up of the power supply, the ion beam may collide with the inner wall surface 14 a of the vacuum vessel 14 (see FIG. 6). In the present embodiment, as shown in FIG. 10, a suppressor electrode 110 is provided at a position facing the inner wall surface 14a of the vacuum vessel 14 where an ion beam may collide, and secondary electrons are trapped in the suppressor electrode 110. Is applied with a necessary negative voltage (-V).

According to this embodiment, even if the ion beam collides with the inner wall surface of the vacuum vessel forming the beam line, the secondary electrons generated there can be trapped or their movement can be suppressed. For this reason, secondary electrons are prevented from flowing back to the ion source 1 or the 30 ° deflector 8 or the like,
Furthermore, collision of the back-flowed secondary electrons with the extraction electrode 1c and the electrode of the acceleration tube 6 can be suppressed.

In this embodiment, the suppressor electrode 110 is provided in the vacuum vessel 14 for trapping secondary electrons generated by the collision of the ion beam. A magnetic field generating means for generating a magnetic field that does not affect the trajectory of the ion beam may be arranged at a portion where the collision occurs, and the movement of the secondary electrons may be suppressed by the magnetic field.

In the above two embodiments, the case where a device that generates only a magnetic field is used as a device arranged along the beam line has been described, but the state of the ion beam is changed to a target state. Similarly, for an ion implanter using a device that generates an electric field for, or a device that generates both a magnetic field and an electric field,
The present invention can be applied.

In the above two embodiments, an ion beam has been described as an example of charged particles. However, a charged particle accelerator for generating and accelerating electrons and negative ions is similarly used. The invention can be applied.

[0052]

According to the present invention, the internal discharge (internal load short-circuit) caused by the collision between the inner wall surface of the apparatus and the charged particle beam, which may occur in the initial stage of the extraction process of the charged particle beam, is prevented. Alternatively, a charged particle accelerator that can be reduced can be provided.

Further, according to the present invention, in an ion implantation apparatus for implanting ions as charged particles into a substrate, as described above, the operation rate of the apparatus is reduced, the wafer processing capacity is reduced, the impurity is implanted into the wafer, and the like. It is possible to provide an ion implantation apparatus that can prevent the occurrence of internal discharge in the initial stage of the ion beam extraction process, which causes the above.

[Brief description of the drawings]

FIG. 1 is a flowchart showing an example of an ion beam extraction procedure in an embodiment of the ion implantation apparatus according to the present invention.

FIG. 2 is an explanatory diagram showing the overall configuration of the ion implantation apparatus.

FIG. 3 is a graph showing an example of a relationship between an electromagnet excitation current and a generated magnetic field intensity.

FIG. 4 is a flowchart showing a procedure for extracting an ion beam according to a conventional technique.

FIG. 5 is a graph showing an example of a boosting process of an acceleration power supply.

FIG. 6 is an explanatory view showing collision between an ion beam and a vacuum vessel.

FIG. 7 is an explanatory diagram showing interference between an ion beam and a wall surface.

FIG. 8 is a block diagram illustrating a configuration of the ion implantation apparatus according to the embodiment of FIG. 1;

FIG. 9 is a flowchart showing another example of the ion beam extraction procedure in the embodiment of FIG. 1;

FIG. 10 is an explanatory view showing a main part configuration in another embodiment of the ion implantation apparatus according to the present invention.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Ion source 2 Pre-stage acceleration power supply 4 Post-stage acceleration power supply 8 30 degree deflector 9 Si wafer 14 Vacuum container.

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[Procedure amendment]

[Submission date] April 1, 2002 (2002.4.1)

[Procedure amendment 1]

[Document name to be amended] Statement

[Correction target item name] Claims

[Correction method] Change

[Correction contents]

[Claims]

Continuing from the front page (72) Inventor Yasuo Yamashita 1-1-1, Kokubuncho, Hitachi City, Ibaraki Prefecture Inside the Kokubu Factory, Hitachi, Ltd. (72) Inventor Kazuo Yonera 1-1-1, Kokubuncho, Hitachi City, Ibaraki Prefecture Share BB09 5C033 AA07 5C034 CD01 CD02 CD03 CD04

Claims (11)

[Claims] 1. An ion implantation apparatus comprising: an ion source for generating ions; an accelerating unit for accelerating the generated ions; and an end station for holding a substrate into which the accelerated ions are implanted. One or more devices that are arranged along the beam line and generate at least one of a magnetic field and an electric field of a target intensity in order to change the ion beam to a specific state; and the one or more devices. A control unit for controlling the acceleration unit. The control unit includes a control mode for extracting ions. In the control mode, the control unit controls the acceleration unit. After generating an accelerating electric field, and controlling the one or more devices to generate respective target fields, the ion source is controlled to generate ions. An ion implanter characterized by the following. 2. The ion source according to claim 1, wherein the ion source includes: a plasma chamber for generating plasma; a magnetic field generation unit for generating a magnetic field in the plasma chamber; a gas supply unit for supplying gas into the plasma chamber; A microwave supply unit for supplying microwaves to the plasma chamber, wherein in the control mode, as a procedure for generating ions, the magnetic field generation unit generates a target magnetic field in the plasma chamber, An ion implantation apparatus, wherein a microwave is introduced into the plasma chamber by the microwave supply unit after a gas is introduced into the plasma chamber by a gas supply unit. 3. The control unit according to claim 1, wherein the acceleration unit includes a power supply that generates a voltage for generating the target acceleration electric field after a boosting period in which the voltage is increased with time. In the mode, after generating ions by controlling the ion source, the power source is started to generate an accelerating electric field, and a field is generated by the one or more devices. Controlling each of the one or more devices to change the intensity of a field generated by the device according to a change in the voltage of the power supply according to a relational expression predetermined for each device. The predetermined relational expression is that the voltage of the power supply and the ions accelerated by the accelerating electric field corresponding to the voltage move without colliding with the inner wall surface of the vacuum vessel forming the beam line. An ion implantation apparatus, which defines a correspondence relationship with a field intensity necessary for the ion implantation. 4. The apparatus according to claim 3, wherein the accelerating unit includes a pre-stage for extracting ions from the ion source, a post-stage for accelerating the extracted ions, the pre-stage and the pre-stage. A power supply for supplying a voltage for generating a target accelerating electric field in a rear part, comprising a pre-stage acceleration power supply and a post-stage acceleration power supply, wherein each of the one or more devices includes a unit for generating a magnetic field. A mass separator that performs mass separation of the ions accelerated in the front stage, a Q lens that shapes the beam of the ions accelerated in the rear stage, and a beam deflector that deflects the ion beam shaped by the Q lens. In the control mode, during the boosting period when the pre-acceleration power supply and the post-acceleration power supply are started, the mass separation is performed according to the voltage applied to the pre-stage unit. In changing the magnetic field strength to be generated, in response to said front portion and the voltage applied to the second part, the ion implantation apparatus characterized by varying the magnetic field intensity generated by the Q lens and the beam deflector. 5. An ion implantation apparatus comprising: an ion source for generating ions; an accelerating unit for accelerating the generated ions; and an end station for holding a substrate into which the accelerated ions are implanted. One or more devices that are arranged along a beam line and generate at least one of a magnetic field and an electric field of a desired intensity in order to change the ion beam to a specific state; and forming the beam line. The accelerating unit is provided with a power supply that generates a voltage for generating the target acceleration electric field through a boosting period in which the voltage is increased with time, and the vacuum container is A secondary electron suppressing means for restricting movement of secondary electrons generated by the collision with a wall portion where the ion beam collides during the boosting period of the power supply. An ion implantation apparatus comprising one or more of the following. 6. The apparatus according to claim 5, wherein said secondary electron trap means is a suppressor electrode which is disposed at a position facing a wall portion with which said ion beam collides, and to which a negative voltage is applied. Ion implanter. 7. A charged particle source for generating charged particles,
A charged particle accelerator comprising: an accelerating unit for accelerating the generated charged particles.The charged particle accelerator is disposed along a beam line of the device, and is used for changing a beam of the charged particles to a specific state. A control unit configured to control at least one of a strong magnetic field and an electric field; and the control unit configured to control the one or more devices, the charged particle generation source, and the acceleration unit; Comprises a control mode for extracting the charged particles, and in the control mode, controls the acceleration unit to generate a target acceleration electric field, and controls the one or more devices to control a target field. A charged particle accelerator that controls the charged particle generation source to generate charged particles. 8. A charged particle generation source for generating charged particles,
A charged particle accelerator comprising: an accelerating unit for accelerating the generated charged particles.The charged particle accelerator is disposed along a beam line of the device, and is used for changing a beam of the charged particles to a specific state. A control unit configured to control at least one of a strong magnetic field and an electric field; and the control unit configured to control the one or more devices, the charged particle generation source, and the acceleration unit; Comprises a control mode for controlling the trajectory of the charged particles, In the control mode, while generating an accelerating electric field by the accelerating unit, to generate a field by the one or more devices, Controls each of the one or more devices, and generates the devices according to a change from the steady state of the accelerating electric field strength according to a relational expression predetermined for each device. The predetermined relational expression is a voltage of the power source and a charged particle accelerated by an accelerating electric field corresponding to the voltage in a vacuum vessel forming the beam line. A charged particle accelerator characterized by defining a correspondence relationship with a field intensity necessary for moving without colliding with a wall surface. 9. A charged particle generation source for generating charged particles,
A charged particle accelerator comprising: an accelerating unit for accelerating the generated charged particles.The charged particle accelerator is disposed along a beam line of the device, and is used for changing a beam of the charged particles to a specific state. And at least one device for generating at least one of a strong magnetic field and an electric field, and a vacuum container forming the beam line, wherein the vacuum container has an acceleration electric field intensity by the acceleration unit displaced from a steady state value. In this case, at least one trap means is provided on a wall portion where the charged particle beam collides and generates at least one of an electric field and a magnetic field for restricting the movement of the charged particle generated by the collision. Charged particle accelerator. 10. A charged particle generation source for generating charged particles, an acceleration unit for accelerating the generated charged particles, and arranged along a beam line to change a beam of the charged particles to a specific state. Therefore, in a method of extracting charged particles in a charged particle accelerator including at least one device that generates at least one of a magnetic field and an electric field of a target strength, And generating a target field by the one or more devices, and then generating charged particles by the charged particle generation source. 11. The ion source according to claim 10, wherein the power source of the acceleration unit generates a target voltage through a boosting period in which an applied voltage is increased with time. After the power is generated, the power is turned on to generate an accelerating electric field, and
A field is generated by the above devices. During the boosting period, each device is generated in accordance with a change in the power supply voltage according to a predetermined relational expression for each of the one or more devices. The predetermined relational expression is that the voltage of the power supply and the charged particles accelerated by the voltage do not collide with the inner wall surface of the vacuum vessel forming the beam line. A method for extracting charged particles, wherein the method defines a relationship with a field strength necessary for movement.