JP2002353730A - Patch antenna - Google Patents
Patch antennaInfo
- Publication number
- JP2002353730A JP2002353730A JP2001161150A JP2001161150A JP2002353730A JP 2002353730 A JP2002353730 A JP 2002353730A JP 2001161150 A JP2001161150 A JP 2001161150A JP 2001161150 A JP2001161150 A JP 2001161150A JP 2002353730 A JP2002353730 A JP 2002353730A
- Authority
- JP
- Japan
- Prior art keywords
- patch antenna
- power supply
- hole
- supply pin
- pin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、通信分野におい
て、特に衛星を利用した移動体通信に用いられるパッチ
アンテナに関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a patch antenna used in the field of communications, particularly for mobile communications using satellites.
【０００２】[0002]
【従来の技術】近年、移動体通信の発達に伴い、グロー
バルポジショニングシステム（GlobalPositioning Syst
em）を利用した様々なシステムが提唱されている。中で
も位置情報機能を搭載した通信情報端末が広く使われる
ようになり、その受信用パッチアンテナの需要数量も莫
大な増加が見込まれている。2. Description of the Related Art In recent years, with the development of mobile communication, a global positioning system (Global Positioning System) has been developed.
Various systems using em) have been proposed. Above all, communication information terminals equipped with a position information function have become widely used, and the demand for patch antennas for reception is expected to increase enormously.
【０００３】以下に受信用パッチアンテナについて説明
する。図５はパッチアンテナの斜視図であり、図６は同
断面図である。パッチアンテナ１はセラミック材料で形
成された誘電体セラミックス２の片面に放射電極３を形
成し、また他面に接地導体４を形成して構成されてい
る。５は給電点、６は給電ピン、７は半田である。給電
ピン６は貫通孔１３に挿入され、一端が半田７で放射電
極３と電気的に接続され、他端が接地導体４側に導出さ
れている。[0003] A receiving patch antenna will be described below. FIG. 5 is a perspective view of the patch antenna, and FIG. 6 is a sectional view of the same. The patch antenna 1 has a structure in which a radiation electrode 3 is formed on one surface of a dielectric ceramic 2 formed of a ceramic material, and a ground conductor 4 is formed on the other surface. Reference numeral 5 denotes a feeding point, 6 denotes a feeding pin, and 7 denotes solder. The power supply pin 6 is inserted into the through hole 13, one end is electrically connected to the radiation electrode 3 by the solder 7, and the other end is led out to the ground conductor 4 side.
【０００４】一般に、給電ピン６は図７（ａ）（ｂ）に
示すような形状をしており、給電ピン６の先端径ｃは結
合される高周波部品との間において一義的に決定され、
給電ピン６の貫通孔部径ｄは誘電体セラミックス２の貫
通孔径ｅに応じて決められることが多い。Generally, the power supply pin 6 has a shape as shown in FIGS. 7A and 7B, and the tip diameter c of the power supply pin 6 is uniquely determined between the power supply pin 6 and the high-frequency component to be coupled.
The through-hole diameter d of the power supply pin 6 is often determined according to the through-hole diameter e of the dielectric ceramic 2.
【０００５】[0005]
【発明が解決しようとする課題】しかしながら上記構成
でパッチアンテナを作成すると、給電ピン６を放射電極
３へ半田付けする際に、加温により溶融した半田７が給
電ピン６の表面を伝わって貫通孔１３へ流れ込んでしま
う現象が発生し、接地導体４側へ溶融半田が盛り出てし
まう不良が発生していた。図７（ｂ）の様に給電ピン６
と貫通孔１３との隙間を小さくした場合でも溶融半田が
伝わって流れ込んでしまう現象を止めることはできず、
接地導体４側へ盛り出てしまう不良は発生していた。そ
の結果、図８（ａ）に示すようにこのパッチアンテナを
実装用基板１１に実装する際、正常な場合は接地導体４
と実装用基板１１は密着しているが、上記の不都合によ
って接地導体４側に半田が盛り出てしまった場合は、図
８（ｂ）に示すように盛り出た半田１２によって接地導
体４と実装用基板１１が密着せず浮き上がった状態とな
ってしまい、受信効率の劣化による利得値の低下を招い
ていた。However, when the patch antenna is formed with the above configuration, when the power supply pin 6 is soldered to the radiation electrode 3, the solder 7 melted by heating is transmitted through the surface of the power supply pin 6 and penetrates. A phenomenon that the molten solder flows into the hole 13 occurs, and a defect that the molten solder protrudes toward the ground conductor 4 has occurred. As shown in FIG.
Even if the gap between the hole and the through hole 13 is reduced, the phenomenon that the molten solder is transmitted and flows in cannot be stopped,
A defect that protruded toward the ground conductor 4 occurred. As a result, when this patch antenna is mounted on the mounting substrate 11 as shown in FIG.
When the solder protrudes on the ground conductor 4 due to the above-described inconvenience, the solder 12 protrudes as shown in FIG. As a result, the mounting substrate 11 floats up without being in close contact with the mounting substrate 11, resulting in a decrease in the gain value due to a deterioration in the reception efficiency.
【０００６】[0006]
【課題を解決するための手段】そこで本発明は上記の課
題を解決するため、貫通孔を有する誘電体セラミックス
の片面に放射電極を、他面には接地導体をそれぞれ形成
し、上記貫通孔に挿入された給電ピンの一端が放射電極
に接合されたパッチアンテナであって、上記給電ピンの
貫通孔への挿入部に凸部を設けたことを特徴とする。In order to solve the above-mentioned problems, the present invention forms a radiation electrode on one side of a dielectric ceramic having a through-hole and a ground conductor on the other side, and forms a through hole in the through-hole. A patch antenna in which one end of the inserted power supply pin is joined to a radiation electrode, wherein a protrusion is provided at an insertion portion of the power supply pin into the through hole.
【０００７】即ち、給電ピンの誘電体セラミックスへの
挿入部に凸部を設けることにより、溶融半田が接地導体
側へ流れ込む現象を抑えるものである。その結果、受信
機器の基板上などからパッチアンテナが浮き上がってし
まう不良発生を防止し、受信効率の劣化による利得値の
低下を抑えることができる。That is, by providing a projection at the insertion portion of the power supply pin into the dielectric ceramic, the phenomenon that the molten solder flows into the ground conductor is suppressed. As a result, it is possible to prevent a defect in which the patch antenna is lifted up from the substrate of the receiving device or the like, and to suppress a decrease in the gain value due to the deterioration of the receiving efficiency.
【０００８】[0008]
【発明の実施の形態】以下、本発明の実施形態を図によ
って説明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, embodiments of the present invention will be described with reference to the drawings.
【０００９】図１、図２に示すように、本発明のパッチ
アンテナ１はセラミック材料で形成された貫通孔１３を
有する誘電体セラミックス２の片面に放射電極３を形成
し、また他面に接地導体４を形成し、上記貫通孔１３に
挿入された給電ピン８の一端が放射電極３に接合され、
他端が接地導体４側に導出されている。As shown in FIGS. 1 and 2, in a patch antenna 1 of the present invention, a radiation electrode 3 is formed on one surface of a dielectric ceramic 2 having a through hole 13 formed of a ceramic material, and grounded on the other surface. A conductor 4 is formed, and one end of the power supply pin 8 inserted into the through hole 13 is joined to the radiation electrode 3,
The other end is led out to the ground conductor 4 side.
【００１０】誘電体セラミックス２の材料としては、Ｂ
ａ−Ｎｄ−Ｔｉ系材料（比誘電率８０〜１２０）、Ｎｄ
−Ａｌ−Ｃａ−Ｔｉ系材料（比誘電率４３〜４６）、Ｌ
ａ−Ａｌ−Ｓｒ−Ｔｉ系材料（比誘電率３８〜４１）、
Ｂａ−Ｔｉ系材料（比誘電率３４〜３６）、Ｂａ−Ｍｇ
−Ｗ系材料（比誘電率２０〜２２）、Ｍｇ−Ｃａ−Ｔｉ
系材料（比誘電率１９〜２１）、サファイヤ（比誘電率
９〜１０）、アルミナセラミックス（比誘電率９〜１
０）、コージライトセラミックス（比誘電率４〜６）な
どを使用する。５は給電点、７は半田である。放射電極
３及び接地導体４は銀、銀−パラジウム、銀−白金、銅
などの電極用ペースト材を用いてスクリーン印刷や転写
などの方法によって形成した後、所定の温度条件によっ
て焼き付け処理を行って得る。The material of the dielectric ceramics 2 is B
a-Nd-Ti-based material (dielectric constant: 80 to 120), Nd
-Al-Ca-Ti-based material (dielectric constant 43 to 46), L
a-Al-Sr-Ti-based material (relative dielectric constant 38 to 41),
Ba-Ti-based material (dielectric constant 34-36), Ba-Mg
-W material (dielectric constant: 20 to 22), Mg-Ca-Ti
Based materials (relative dielectric constant 19-21), sapphire (relative dielectric constant 9-10), alumina ceramics (relative dielectric constant 9-1)
0), cordierite ceramics (relative permittivity 4 to 6) or the like is used. Reference numeral 5 denotes a power supply point, and reference numeral 7 denotes solder. The radiation electrode 3 and the ground conductor 4 are formed by a method such as screen printing or transfer using an electrode paste material such as silver, silver-palladium, silver-platinum, or copper, and then baked under a predetermined temperature condition. obtain.
【００１１】図３に拡大図を示すように、本発明にかか
る給電ピン８は貫通孔１３への挿入部に凸部１０が設け
てある。この凸部１０を設けることにより、溶融して流
れ込んできた半田７の液だまり９を作って受け止める効
果があり、接地導体４側へ溶融半田が盛り出てしまう現
象を防止することができる。また同時に貫通孔１３内に
おける給電ピン８の偏心を抑えることもできるため、寸
法精度の良いパッチアンテナ１が形成でき実装用基板１
１への自動装着を容易に行うことができる。As shown in an enlarged view in FIG. 3, the power supply pin 8 according to the present invention has a projection 10 at a portion inserted into the through hole 13. Providing the convex portion 10 has an effect of forming and receiving a liquid pool 9 of the solder 7 that has flowed in by melting, and can prevent a phenomenon in which the molten solder bulges to the ground conductor 4 side. At the same time, since the eccentricity of the power supply pin 8 in the through hole 13 can be suppressed, the patch antenna 1 with high dimensional accuracy can be formed, and the mounting substrate 1 can be formed.
1 can be easily mounted.
【００１２】凸部１０の高さａは０．０３ｍｍ以上好ま
しくは０．０６ｍｍ以上、且つクリアランスｂが０．０
１ｍｍ以上とすることが望ましい。高さａが０．０３ｍ
ｍよりも小さいと流れ込んできた溶融半田を受け止める
液だまり９が充分でなく、受け止められなかった溶融半
田が接地導体４側まで盛り出てしまう不良が発生する。
また、クリアランスｂが０．０１ｍｍより小さいと、誘
電体セラミックス１の寸法バラツキにより給電ピン８を
貫通孔１３へ挿入する際に給電ピン８が挿入できないピ
ン挿入不良が発生してしまう。The height a of the projection 10 is 0.03 mm or more, preferably 0.06 mm or more, and the clearance b is 0.0
It is desirable that the thickness be 1 mm or more. Height a is 0.03m
If it is smaller than m, the liquid pool 9 for receiving the flowing molten solder is not sufficient, and a defect that the unreceivable molten solder protrudes to the ground conductor 4 side occurs.
If the clearance b is smaller than 0.01 mm, a pin insertion failure in which the power supply pin 8 cannot be inserted when the power supply pin 8 is inserted into the through hole 13 occurs due to a dimensional variation of the dielectric ceramic 1.
【００１３】通常、給電ピン８の先端径ｃは結合される
高周波部品との間でφ０．８ｍｍと一義的に決定され、
貫通孔径ｅは給電ピン８の先端径ｃより大きくすればよ
く、通常φ０．８ｍｍからφ２．０ｍｍで形成される。
しかし、誘電体セラミックス２の寸法バラツキにより貫
通孔径ｅがφ０．８ｍｍよりも小さくなってしまうこと
があるため、寸法バラツキを考慮して貫通孔径ｅを決定
することが好ましい。Usually, the tip diameter c of the power supply pin 8 is uniquely determined to be φ0.8 mm between the power supply pin 8 and the high-frequency component to be coupled.
The diameter e of the through hole may be larger than the diameter c of the tip of the power supply pin 8, and is usually formed from φ0.8 mm to φ2.0 mm.
However, the through-hole diameter e may be smaller than φ0.8 mm due to the dimensional variation of the dielectric ceramics 2. Therefore, it is preferable to determine the through-hole diameter e in consideration of the dimensional variation.
【００１４】また、図４に本発明の他の実施形態を示
す。凸部１０ａはピン部１４の同心円上に断続的に形成
したもので、凸部１０ｂはピン部１４の同心円上に連続
的に形成したものである。図４（ａ）（ｂ）は凸部１０
ａが給電点５の直下に、凸部１０ｂがピン部１４の中央
付近にあり、図４（ｃ）（ｄ）は凸部１０ａ及び凸部１
０ｂともにピン部１４の中央付近にある。図４（ｅ）は
凸部１０ｂがピン部１４の中央付近に２カ所ある。図
（ｆ）は凸部１０ｂが給電点５の直下とピン部１４の中
央付近にある。図４（ｇ）は凸部１０ａが給電点５の直
下とピン部１４の中央付近にある。図４（ｈ）は凸部１
０ｂがピン部１４の中央付近に１カ所だけあり、図４
（ｉ）は凸部１０ａがピン部１４の中央付近に１カ所だ
けある。なお、ピン部１４の中央付近には連続的に形成
された凸部１０ｂを設けた方が液だまり９のための面積
が広くなるため、より好ましい。さらに、凸部を複数設
けることで偏心を抑える効果を高くできる。FIG. 4 shows another embodiment of the present invention. The protrusion 10a is formed intermittently on the concentric circle of the pin portion 14, and the protrusion 10b is formed continuously on the concentric circle of the pin portion 14. FIGS. 4A and 4B show the convex portions 10.
a is immediately below the feeding point 5 and the protrusion 10b is near the center of the pin 14. FIGS. 4C and 4D show the protrusion 10a and the protrusion 1 respectively.
0b is near the center of the pin portion 14. FIG. 4E shows two convex portions 10 b near the center of the pin portion 14. In FIG. 5F, the protrusion 10 b is located immediately below the feeding point 5 and near the center of the pin 14. In FIG. 4G, the protrusion 10 a is located immediately below the feeding point 5 and near the center of the pin 14. FIG. 4H shows the convex portion 1.
0b is located at only one location near the center of the pin portion 14, and FIG.
In (i), there is only one convex portion 10a near the center of the pin portion 14. It is more preferable to provide a continuously formed convex portion 10b near the center of the pin portion 14 because the area for the liquid pool 9 becomes large. Further, by providing a plurality of convex portions, the effect of suppressing eccentricity can be enhanced.
【００１５】また、図示していないが３カ所以上の凸部
１０を設けても同様の効果が得られる。Although not shown, the same effect can be obtained even if three or more convex portions 10 are provided.
【００１６】凸部１０を設けた給電ピン８は金型を用い
てプレス成形により形成される。針金状をしたピンの材
料を金型の片方のパンチで掴んでおき、もう一方のパン
チには凸部１０を形作るための形状があらかじめ彫られ
てあり、それを押し当てて針金をつぶすことで目的の形
状を得る。給電ピン８の材料は導電性のあるものであれ
ば良いが、抵抗値が小さくプレスにより形状加工が行い
やすい銅、アルミニウムなどの金属材料が選択される。The power supply pins 8 provided with the projections 10 are formed by press molding using a mold. The material of the wire-shaped pin is gripped by one punch of the mold, and the other punch is engraved with a shape for forming the convex portion 10 in advance, and is pressed against the wire to crush the wire. Obtain the desired shape. The material of the power supply pin 8 may be any material as long as it has conductivity, but a metal material such as copper or aluminum having a small resistance value and easily formed by pressing is selected.
【００１７】[0017]
【実施例】本発明の実施例として、図１、図２に示すパ
ッチアンテナを作成した。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS As an embodiment of the present invention, a patch antenna shown in FIGS. 1 and 2 was prepared.
【００１８】誘電体セラミックス２はＭｇ−Ｃａ−Ｔｉ
系材料（比誘電率約２０）で形成された２５ｍｍ×２５
ｍｍ×厚み４ｍｍとし、給電ピン８を挿入する貫通孔径
ｅはφ１．０ｍｍとした。放射電極３、接地導体４はい
ずれも銀ペーストをスクリーン印刷し、大気中約８７０
℃で焼き付けを行って形成した。放射電極３は誘電体セ
ラミックス２のほぼ中央部に約２０ｍｍ×約２０ｍｍ、
接地導体４は約２５ｍｍ×約２５ｍｍとした。The dielectric ceramics 2 is made of Mg-Ca-Ti
25mm x 25 formed of a series material (relative dielectric constant about 20)
mm × 4 mm in thickness, and the diameter e of the through hole into which the power supply pin 8 is inserted was φ1.0 mm. Both the radiation electrode 3 and the ground conductor 4 are screen-printed with silver paste, and approximately 870 in air.
It was formed by baking at ℃. The radiation electrode 3 is approximately 20 mm × approximately 20 mm approximately in the center of
The ground conductor 4 was about 25 mm × about 25 mm.
【００１９】なお、誘電体セラミックス２はスプレード
ライにて造粒された原料を粉末プレス成形にて金型を用
いて成形した後、大気中約１３００℃で焼成して得た。The dielectric ceramics 2 was obtained by molding a raw material granulated by spray drying by using a metal mold by powder press molding, and then firing at about 1300 ° C. in the air.
【００２０】次に、放射電極３及び接地導体４を形成し
た誘電体セラミックス２を受信機器などの基板上に接続
するための給電ピン８を、接地導体４からは絶縁し、誘
電体セラミックス２を貫通して放射電極３の給電点５に
半田７で接合し、パッチアンテナ１を完成させた。給電
ピン８は材料に銅を使用し、表面には半田メッキ処理を
した。また、給電ピン８の先端径ｃはφ０．８ｍｍで固
定とした。なお、給電ピン８は図３に示す様な形状と
し、金型を用いて一体に形成した。Next, a power supply pin 8 for connecting the dielectric ceramic 2 on which the radiation electrode 3 and the ground conductor 4 are formed on a substrate such as a receiving device is insulated from the ground conductor 4, and the dielectric ceramic 2 is separated. The patch antenna 1 was penetrated and joined to the feeding point 5 of the radiation electrode 3 with solder 7 to complete the patch antenna 1. The power supply pin 8 used copper as a material, and the surface was subjected to solder plating. The tip diameter c of the power supply pin 8 was fixed at φ0.8 mm. The power supply pins 8 were formed as shown in FIG. 3 and were integrally formed using a mold.
【００２１】給電ピン８の凸部１０の高さａを変化させ
たサンプルを各５０個ずつ作成し、溶融半田が流れ込ん
で接地導体４よりも盛り出ているものを不良品として、
その不良率を表１に示す。また、各々の場合におけるサ
ンプルを日本ヒューレット・パッカード社製のネットワ
ークアナライザーを用いて電波暗室内における利得値を
測定し、従来の給電ピンを用いた場合との特性比較を行
い、利得値が向上していれば◎、同等であれば○、劣化
していれば×とした。その結果も表１にあわせて示す。
電波暗室内での測定時には、大きさ７０ｍｍ角のアルミ
製グランド板を測定標準治具として用いた。また、偏心
は貫通孔１３の穴径中心と給電ピン８の先端との距離を
投影機により測定して得た。Fifty samples each of which the height a of the projection 10 of the power supply pin 8 was changed were prepared, and a sample in which the molten solder flowed and protruded from the ground conductor 4 was regarded as a defective product.
Table 1 shows the defective rates. In addition, the gain value of each sample was measured in a anechoic chamber using a network analyzer manufactured by Hewlett-Packard Company of Japan, and the characteristics were compared with those using a conventional power supply pin.れ ば, if equivalent, and れ ば if deteriorated. The results are also shown in Table 1.
At the time of measurement in an anechoic chamber, an aluminum ground plate having a size of 70 mm square was used as a measurement standard jig. The eccentricity was obtained by measuring the distance between the center of the diameter of the through hole 13 and the tip of the power supply pin 8 using a projector.
【００２２】[0022]
【表１】 [Table 1]
【００２３】表１より明らかなように、凸部の高さａは
０．０３ｍｍ以上とすれば溶融半田の流れ込みに起因す
る不良率を抑えることができる。また、凸部の高さａを
０．０６ｍｍ以上とすれば不良率をさらに抑えることが
できる。表１におけるピン挿入不良とは、誘電体セラミ
ックスの寸法バラツキの影響によりクリアランスｂが小
さくなりすぎたために、給電ピン８が挿入できない場合
が発生するものである。従って、クリアランスｂは０．
０１ｍｍ以上とする方が良い。なお、凸部を設けること
により偏心を抑えることも可能となる。As is clear from Table 1, when the height a of the convex portion is 0.03 mm or more, the defective rate due to the flow of the molten solder can be suppressed. Further, when the height a of the convex portion is 0.06 mm or more, the defective rate can be further suppressed. The pin insertion failure in Table 1 occurs when the power supply pin 8 cannot be inserted because the clearance b has become too small due to the dimensional variation of the dielectric ceramics. Therefore, the clearance b is equal to 0.
It is better to be at least 01 mm. It is to be noted that eccentricity can be suppressed by providing the convex portion.
【００２４】また、本発明の給電ピン８を用いてパッチ
アンテナを作成した場合、電波暗室内における利得値は
従来の給電ピンを用いた場合と同等であり、問題ないレ
ベルであることも確認できた。Also, when a patch antenna is prepared using the power supply pin 8 of the present invention, the gain value in the anechoic chamber is equivalent to that when the conventional power supply pin is used, and it can be confirmed that there is no problem. Was.
【００２５】[0025]
【発明の効果】以上のように本発明によれば、貫通孔を
有する誘電体セラミックスの片面に放射電極を、他面に
は接地導体をそれぞれ形成し、上記貫通孔に挿入された
給電ピンの一端が放射電極に接合されたパッチアンテナ
であって、上記給電ピンの貫通孔への挿入部に凸部を設
けることにより、溶融半田が接地導体側へ流れ込む現象
を抑えることができる。その結果、受信機器の基板上な
どからパッチアンテナが浮き上がってしまう不良発生を
防止し、受信効率の劣化による利得値の低下を抑えるこ
とができる。As described above, according to the present invention, a radiation electrode is formed on one surface of a dielectric ceramic having a through hole, and a ground conductor is formed on the other surface. The patch antenna having one end joined to the radiation electrode, and by providing a projection at the insertion portion of the power supply pin into the through hole, it is possible to suppress the phenomenon that the molten solder flows into the ground conductor. As a result, it is possible to prevent a defect in which the patch antenna is lifted up from the substrate of the receiving device or the like, and to suppress a decrease in the gain value due to the deterioration of the receiving efficiency.
【００２６】また、従来の給電ピンは切削により製造し
ていたのに比べ、金型を用いて形成することで製造効率
が良くなり経済的にも有利である。その結果、安価なパ
ッチアンテナを提供することができる。In addition, as compared with a conventional power supply pin manufactured by cutting, a power supply pin is formed by using a metal mold, thereby improving the manufacturing efficiency and is economically advantageous. As a result, an inexpensive patch antenna can be provided.
【図１】本発明のパッチアンテナを示す斜視図である。FIG. 1 is a perspective view showing a patch antenna of the present invention.
【図２】本発明のパッチアンテナを示す断面図である。FIG. 2 is a sectional view showing a patch antenna of the present invention.
【図３】本発明のパッチアンテナを示す拡大断面図であ
る。FIG. 3 is an enlarged sectional view showing a patch antenna of the present invention.
【図４】（ａ）〜（ｉ）は本発明のパッチアンテナに用
いる給電ピンのさまざまな実施形態を示す図である。FIGS. 4A to 4I are diagrams showing various embodiments of a feed pin used in the patch antenna of the present invention.
【図５】従来のパッチアンテナを示す斜視図である。FIG. 5 is a perspective view showing a conventional patch antenna.
【図６】従来のパッチアンテナを示す断面図である。FIG. 6 is a sectional view showing a conventional patch antenna.
【図７】（ａ）（ｂ）は従来のパッチアンテナを示す拡
大断面図である。FIGS. 7A and 7B are enlarged sectional views showing a conventional patch antenna.
【図８】（ａ）（ｂ）はパッチアンテナを実装用基板に
接地した状態の側面図である。FIGS. 8A and 8B are side views of a state in which the patch antenna is grounded to a mounting substrate.
１：パッチアンテナ ２：誘電体セラミックス ３：放射電極 ４：接地導体 ５：給電点 ６：給電ピン ７：半田 ８：給電ピン ９：液だまり １０ａ：凸部 １０ｂ：凸部 １１：実装用基板 １２：半田 １３：貫通孔 １４：ピン部 ａ：高さ ｂ：クリアランス ｃ：先端径 ｄ：貫通孔部径 ｅ：貫通孔径 1: Patch antenna 2: Dielectric ceramic 3: Radiation electrode 4: Ground conductor 5: Power supply point 6: Power supply pin 7: Solder 8: Power supply pin 9: Liquid reservoir 10a: Convex part 10b: Convex part 11: Mounting substrate 12 : Solder 13: Through hole 14: Pin part a: Height b: Clearance c: Tip diameter d: Through hole diameter e: Through hole diameter
───────────────────────────────────────────────────── フロントページの続き Ｆターム(参考） 5J045 AA01 AB06 DA10 EA07 HA06 MA04 NA01 ──────────────────────────────────────────────────続 き Continued on the front page F term (reference) 5J045 AA01 AB06 DA10 EA07 HA06 MA04 NA01
Claims (2)
に放射電極を、他面には接地導体をそれぞれ形成し、上
記貫通孔に挿入された給電ピンの一端が放射電極に接合
されたパッチアンテナであって、上記給電ピンの貫通孔
への挿入部に凸部を設けたことを特徴とするパッチアン
テナ。1. A patch antenna in which a radiation electrode is formed on one surface of a dielectric ceramic having a through hole, and a ground conductor is formed on the other surface, and one end of a feed pin inserted into the through hole is joined to the radiation electrode. A patch antenna, wherein a projection is provided at an insertion portion of the power supply pin into the through hole.
求項１記載のパッチアンテナ。2. The patch antenna according to claim 1, wherein a plurality of said convex portions are provided.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001161150A JP2002353730A (en) | 2001-05-29 | 2001-05-29 | Patch antenna |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001161150A JP2002353730A (en) | 2001-05-29 | 2001-05-29 | Patch antenna |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2002353730A true JP2002353730A (en) | 2002-12-06 |
Family
ID=19004470
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001161150A Pending JP2002353730A (en) | 2001-05-29 | 2001-05-29 | Patch antenna |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2002353730A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009008163A1 (en) * | 2007-07-09 | 2009-01-15 | Mitsubishi Electric Corporation | Antenna for rfid reader/writer |
| JP2010154236A (en) * | 2008-12-25 | 2010-07-08 | Mitsubishi Electric Corp | Patch antenna |
| WO2010123245A2 (en) * | 2009-04-20 | 2010-10-28 | (주)파트론 | Antenna having a pipe structure in which a magnetic medium or a dielectric medium is inserted |
| CN105958187A (en) * | 2016-05-19 | 2016-09-21 | 深圳市轱辘软件开发有限公司 | Antenna and vehicle possessing same |
| GB2556185A (en) * | 2016-09-26 | 2018-05-23 | Taoglas Group Holdings Ltd | Patch antenna construction |
| WO2018169239A1 (en) * | 2017-03-14 | 2018-09-20 | 주식회사 아모텍 | Multilayer patch antenna |
| WO2023068617A1 (en) * | 2021-10-20 | 2023-04-27 | 주식회사 아모텍 | Feed pin, and patch antenna comprising same |
-
2001
- 2001-05-29 JP JP2001161150A patent/JP2002353730A/en active Pending
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009008163A1 (en) * | 2007-07-09 | 2009-01-15 | Mitsubishi Electric Corporation | Antenna for rfid reader/writer |
| KR100963477B1 (en) | 2007-07-09 | 2010-06-17 | 미쓰비시덴키 가부시키가이샤 | Patch antenna |
| US7812769B2 (en) | 2007-07-09 | 2010-10-12 | Mitsubishi Electric Corporation | RFID reader/writer antenna |
| JP2010154236A (en) * | 2008-12-25 | 2010-07-08 | Mitsubishi Electric Corp | Patch antenna |
| WO2010123245A2 (en) * | 2009-04-20 | 2010-10-28 | (주)파트론 | Antenna having a pipe structure in which a magnetic medium or a dielectric medium is inserted |
| WO2010123245A3 (en) * | 2009-04-20 | 2011-03-31 | (주)파트론 | Antenna having a pipe structure in which a magnetic medium or a dielectric medium is inserted |
| CN105958187A (en) * | 2016-05-19 | 2016-09-21 | 深圳市轱辘软件开发有限公司 | Antenna and vehicle possessing same |
| GB2556185A (en) * | 2016-09-26 | 2018-05-23 | Taoglas Group Holdings Ltd | Patch antenna construction |
| WO2018169239A1 (en) * | 2017-03-14 | 2018-09-20 | 주식회사 아모텍 | Multilayer patch antenna |
| US11189926B2 (en) | 2017-03-14 | 2021-11-30 | Amotech Co., Ltd. | Multilayer patch antenna |
| WO2023068617A1 (en) * | 2021-10-20 | 2023-04-27 | 주식회사 아모텍 | Feed pin, and patch antenna comprising same |
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