JP2002353537A - Magnetoresistive effect element and magnetic random access memory device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To improve the rate of change of resistance by raising an element resistance by raising resistance of an antiferromagnetic layer, while considering the fact of the electrons which conserve spin to pass through the antiferromagnetic layer, related to a magnetoresistive effect element of CPP arrangement. SOLUTION: The magnetoresistive effect element comprises a spin-valve film (for example, a simple single spin valve film 1) in which a free layer 14, a non-magnetic layer 13, a fixed layer 12, and an antiferromagnetic layer 11 are sequentially laminated, or a spin-valve film where the antiferromagnetic layer, the fixed layer, the non-magnetic layer, the free layer, the non-magnetic layer, the fixed layer, and the antiferromagnetic layer are sequentially laminated with a sensing current flowing vertically to a film surface. The antiferromagnetic layer 11 comprises α type sesqui iron oxide, manganese oxide (II), nickel oxide (II), or ferric sulfide (II).

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a magnetoresistive element and a magnetic random access memory device, and more particularly, to a magnetic head for a hard disk drive, a magnetic random access memory (MRAM).
CPP applied to gnetic random access memory)
The present invention relates to a magnetoresistive element including a (Current Perpendicular to Plane) type spin valve film and a magnetic random access memory device using the same.

[0002]

2. Description of the Related Art A magnetoresistive sensor, a magnetic head, and the like can read signals from the surface of a magnetic material with a large linear density, and thus are widely used as magnetic read transducers of hard disk drives. Conventional magnetoresistive sensors are based on the anisotropic magnetoresistive effect, in which the resistance of the element changes in proportion to the square of the cosine of the angle between the magnetization direction of the element and the direction of the sense current flowing through the element. It is a thing using.

Recently, the giant magnetoresistance effect caused by the change in resistance of a device in which a sense current flows is caused by the spin dependence of conduction electrons between magnetic layers via a nonmagnetic layer and the spin dependence scattering at a different layer interface. In particular, the spin valve effect is used. By using this spin valve effect element, it is possible to manufacture a head having a higher resistance change rate than the anisotropic magnetoresistance effect and a high sensitivity.

[0004] It is expected that a spin valve element having a conventional element structure can cope with a recording density of up to 50 Gbpsi. However, when the element size is reduced, a spin valve element having a recording density of 50 Gbpsi or more is limited in element structure even with the latest drive means.

Further, when the recording density reaches an area of 100 Gbps, the track width is expected to be 0.1 μm, and a new element structure is required. As a countermeasure, CPP (Current Perp.)
Endicular to Plane) arrangements are being considered. First, a TMR element using a tunnel current has been studied, and recently, a spin valve or a multi-layer type spin valve element has been studied. About these, for example,
Nos. 1-509956, JP-A-2000-30222, JP-A-2000-228004, and Japanese Society of Applied Magnetics, Park Overview (2000), p.

[0006]

SUMMARY OF THE INVENTION However, CPP
With this arrangement, the sense current flows in a direction perpendicular to the thin films constituting the spin valve element and their interfaces, so that the sense current is reduced as in the case of the conventional CIP (Current in-Plane) arrangement. It will not flow mainly through the electrically conductive layer nor flow parallel to the interface. At that time, it was found that the element resistance was extremely low and the rate of change in resistance could not be increased.

It has been reported that increasing the thickness of the free layer constituting the spin-valve film improves the rate of change in resistance. You reach the point.

Further, in order to increase the head sensitivity,
It is necessary to reduce the value represented by “saturation magnetization of free layer” × “film thickness”, and the above method cannot be an essential solution.

The above problem arises because the spin valve element developed in the CIP arrangement is directly applied to the CPP arrangement.

Therefore, in the case of the CPP arrangement, it is understood that the current path inside the spin valve is different from that of the CIP arrangement, and the element resistance serving as the base of the resistance change rate in the CPP arrangement shows a certain value. A spin valve film is required.

[0011]

SUMMARY OF THE INVENTION The present invention is directed to a magnetoresistive element and a magnetic random access memory device for solving the above-mentioned problems.

A magnetoresistive element according to the present invention comprises a spin valve film in which a free layer, a nonmagnetic layer, a fixed layer, and an antiferromagnetic layer are sequentially stacked, or an antiferromagnetic layer, a fixed layer, and a nonmagnetic layer. A magnetoresistive effect element comprising a spin valve film in which a free layer, a nonmagnetic layer, a fixed layer, and an antiferromagnetic layer are sequentially stacked, wherein the sense current flows in a direction perpendicular to the film surface; Is α-type iron sesquioxide, manganese (II) oxide,
It is made of nickel (II) oxide or iron (II) sulfide.

[0013] Alternatively, the antiferromagnetic layer is formed by laminating at least two or more layers of a metal antiferromagnetic layer group consisting of a platinum manganese layer, an iridium manganese layer, an iron manganese layer, and a nickel manganese layer. .

Alternatively, the antiferromagnetic layer is a nonmetallic antiferromagnetic layer group consisting of an α-type iron sesquioxide layer, a manganese (II) oxide layer, a nickel (II) oxide layer and an iron (II) sulfide layer. Of at least two or more layers.

Alternatively, the antiferromagnetic layer comprises at least one layer of a metal antiferromagnetic layer group consisting of a platinum manganese layer, an iridium manganese layer, an iron manganese layer, and a nickel manganese layer; It is formed by laminating at least one layer of a nonmetallic antiferromagnetic layer group consisting of an iron layer, a manganese (II) oxide layer, a nickel (II) oxide layer, and an iron (II) sulfide layer.

Alternatively, the antiferromagnetic layer comprises at least two of a group of metal antiferromagnetic materials consisting of platinum manganese, iridium manganese, iron manganese and nickel manganese.
More than one species are dispersed.

Alternatively, the antiferromagnetic layer comprises at least two members selected from the group consisting of non-metallic antiferromagnetic materials consisting of α-type iron sesquioxide, manganese (II) oxide, nickel oxide (II) and iron sulfide (II). The above is dispersed.

Alternatively, the antiferromagnetic layer comprises at least one of a group of metal antiferromagnetic materials consisting of platinum manganese, iridium manganese, iron manganese and nickel manganese.
A dispersion of at least one species and at least one of a group of non-metallic antiferromagnetic substances consisting of α-type iron sesquioxide, manganese (II) oxide, nickel (II) oxide and iron (II) sulfide It is.

Alternatively, the antiferromagnetic layer comprises at least one of a group of metal antiferromagnetic materials consisting of platinum manganese, iridium manganese, iron manganese and nickel manganese.
And at least one of a group of non-antiferromagnetic materials comprising aluminum oxide, silicon oxide, iron sesquioxide and titanium carbide.

Alternatively, the antiferromagnetic layer comprises at least one member selected from the group consisting of nonmetallic antiferromagnetic materials consisting of α-type iron sesquioxide, manganese (II) oxide, nickel oxide (II) and iron sulfide (II). The above is obtained by dispersing at least one of a group of non-antiferromagnetic materials including aluminum oxide, silicon oxide, iron sesquioxide, and titanium carbide.

In the above-described magnetoresistive element, the normalized resistance in the direction perpendicular to the plane of the antiferromagnetic layer can be increased to 30,000 μΩμm ² or more by the above configuration of the antiferromagnetic layer adjacent to the fixed layer. As a result, the element resistance contributing to the resistance change increases, and the resistance change amount can be improved very efficiently.

According to the magnetic random access memory device of the present invention, there is provided a spin valve film in which a free layer, a nonmagnetic layer, a fixed layer, and an antiferromagnetic layer are sequentially stacked, or an antiferromagnetic layer, a fixed layer, and a nonmagnetic layer. Random access using a magnetoresistive element having a spin valve film in which a magnetic layer, a free layer, a nonmagnetic layer, a fixed layer, and an antiferromagnetic layer are sequentially laminated, and a sense current flows in a direction perpendicular to the film surface. In a memory device,
The antiferromagnetic layer comprises the antiferromagnetic film of the present invention described above.

In the above-mentioned magnetic random access memory device, the antiferromagnetic layer of the magnetoresistive element used in the device has the above-described configuration, so that the normalized resistance of the antiferromagnetic layer in the direction perpendicular to the plane is reduced. 30000μΩμm ²
It can be raised more than that. As a result, the element resistance contributing to the resistance change increases, and the resistance change amount can be improved very efficiently. Therefore, the operation of recording information in the memory cell and the operation of reading information recorded in the memory cell can be performed stably.

[0024]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS One embodiment of the magnetoresistive element of the present invention will be described with reference to the schematic sectional views of FIGS. The magnetoresistive element described below is a single spin valve film in which a free layer, a nonmagnetic layer, a fixed layer, and an antiferromagnetic layer are laminated in this order, or an antiferromagnetic layer, a fixed layer, a nonmagnetic layer, and a free spin layer. A dual spin valve film in which a layer, a non-magnetic layer, a fixed layer, and an antiferromagnetic layer are sequentially stacked, and a sense current flows in a direction perpendicular to the film surface.

As shown in FIG. 1, in the simple type single spin valve film 1, an antiferromagnetic layer 11, a fixed layer 12, a nonmagnetic layer 13, and a free layer 14 are sequentially formed on an electrode layer 51, for example, from a lower layer. It is laminated. Further, an electrode layer 52 is formed on the free layer 14. In the above structure, the free layer 14 side may be a lower layer.

As shown in FIG. 2, the synthetic single spin valve film 2 is formed on the electrode layer 51 by, for example, an antiferromagnetic layer 11, a fixed layer 12, a nonmagnetic layer 1
3. The free layer 14 is sequentially laminated, and the fixed layer 12
The inside magnetic layer portion has a laminated ferri structure. Further, an electrode layer 52 is formed on the free layer 14. In the above structure, the free layer 14 side may be a lower layer. In FIG. 2, the same components as those described with reference to FIG. 1 are denoted by the same reference numerals.

On the other hand, as shown in FIG. 3, a simple dual spin-valve film 3 has an antiferromagnetic layer 11, a fixed layer 12, a nonmagnetic layer 13,
Free layer 14, nonmagnetic layer 15, fixed layer 16, antiferromagnetic layer 1
7 are sequentially stacked. Further, an electrode layer 52 is formed on the antiferromagnetic layer 17.

As shown in FIG. 4, a synthetic dual spin valve film 4 is formed on an electrode layer 51 by, for example, forming an antiferromagnetic layer 11, a fixed layer 12, and a nonmagnetic layer
3, a free layer 14, a nonmagnetic layer 15, a fixed layer 16, and an antiferromagnetic layer 17 are sequentially stacked, and the magnetic layer portions in the fixed layers 12, 16 have a stacked ferrimagnetic layer structure. In addition,
In FIG. 4, the same components as those described with reference to FIGS.

The antiferromagnetic layers 11 and 17 are made of α-type iron sesquioxide (αFe ₂ O ₃ ), manganese (II) oxide (MnO),
Nickel (II) oxide (NiO) or iron (II) sulfide (Fe
S).

The antiferromagnetic layers 11 and 17 are composed of a platinum manganese (PtMn) layer and iridium manganese (IrMn).
At least one of a metal antiferromagnetic layer group consisting of an iron manganese (FeMn) layer and a nickel manganese (NiMn) layer;
₂ O ₃ ) layer, manganese (II) oxide (MnO) layer, nickel oxide (II) (NiO) layer, and iron (II) (FeS) non-metallic antiferromagnetic layer group It is formed by laminating the above layers.

The antiferromagnetic layers 11 and 17 are made of platinum manganese (PtMn), iridium manganese (IrMn), iron manganese (FeMn) and nickel manganese (NiMn).
n), at least one metal antiferromagnetic material group consisting of α-type iron sesquioxide (αFe ₂ O ₃ ), manganese oxide (II) (MnO), nickel oxide (II) (NiO) and sulfide It is obtained by dispersing at least one of a group of non-metallic antiferromagnetic substances made of iron (II) (FeS).

The antiferromagnetic layers 11 and 17 are made of platinum manganese (PtMn), iridium manganese (IrMn), iron manganese (FeMn) and nickel manganese (NiMn).
At least one or more of the metal antiferromagnetic group consisting of n) and at least one or more of the non-antiferromagnetic group consisting of aluminum oxide, silicon oxide, iron sesquioxide and titanium carbide are dispersed. It becomes.

The antiferromagnetic layers 11 and 17 are made of α-type iron sesquioxide (αFe ₂ O ₃ ), manganese (II) oxide (MnO),
At least one of a group of non-metallic antiferromagnetic materials consisting of nickel (II) oxide (NiO) and iron (II) sulfide, aluminum oxide (Al ₂ O ₃ ), silicon oxide (Si ₂
O) is dispersed with at least one of a group of non-antiferromagnetic oxides composed of O).

Each of the antiferromagnetic layers 11 and 17 has a thickness of at least 30 nm or more.
The magnetoresistive elements 1 to 4 are formed to have a thickness less than a thickness that does not cause thermal damage due to heat generated when a current flows through the elements 1 and 17. For example, if the normalized resistance value is 700
The film is formed to have a thickness of not more than mΩμm ² .

Therefore, the antiferromagnetic layers 11 and 17 have the above-described structure, so that the antiferromagnetic layer 11 adjacent to the fixed layer 12 and the antiferromagnetic layer 17 adjacent to the fixed layer 16 have the standard in the direction perpendicular to the plane. The specific resistance is increased to 30,000 μΩμm ² or more. As a result, the element resistance that contributes to the resistance change increases, and the resistance change amount improves very efficiently.

For example, as a configuration example in which an antiferromagnetic layer is laminated, a PtMn layer / IrMn layer, a PtMn layer / NiO
Layers, a PtMn layer / NiMn layer, a PtMn layer / FeMn layer, and the like, and a high-resistance layer such as Fe ₂ O ₃ or TiC may be inserted in the above-mentioned laminated structure. Further, at least one or more of a group of non-antiferromagnetic materials composed of Al ₂ O ₃ , Si ₂ OFe ₂ O ₃ , and TiC may be dispersed (granularized) in a PtMn layer, an IrMn layer, or the like. . Also, PtMn
Antiferromagnetic materials such as / NiO and PtMn / NiMn may be dispersed (granularized).

A specific example of the antiferromagnetic layer will be described below.
The structure of the base spin valve film is a Ta layer (5n
m) / (antiferromagnetic layer) / CoFe layer (2 nm) / Ru layer (0.9 nm) / CoFe layer (2 nm) / Cu layer (3n
m) / CoFe layer (1 nm) / NiFe layer (5 nm) /
A Ta layer (5 nm) was used. Note that the thickness in parentheses indicates the film thickness.

After forming the spin valve film having the above structure, 10
Annealing was performed at 270 ° C. for 4 hours in a magnetic field of kOe. On and under the spin valve film, a 300 nm-thick electrode material (for example, C
u) is deposited. The spin valve film thus obtained was patterned into a size of 0.1 μm (length) × 0.1 μm (width), and the amount of change in resistance was measured. Summarizing the structure of the antiferromagnetic layer studied, the element resistance, and the resistance change amount,
The results are shown in Table 1.

[0039]

[Table 1]

The resistance of the antiferromagnetic layer is increased by adopting the structure described above. As a result, as shown in Table 1, the resistance change amount is improved. That is, a value of 0.2Ω or more is obtained as the resistance change amount. In addition,
In this embodiment, the use limit is a normalized resistance value of 700 mΩμm ² .

Looking at Table 1 in detail, the samples No. 1 to N
As shown in o.4, the antiferromagnetic layers 11 and 17 are made of MnO, α
In the case of Fe ₂ O ₃ , NiO, FeS, etc., the resistance change amount is 0.2Ω or more. On the other hand, in the PtMn (film thickness: 15 nm) of the sample No. 19 of the comparative example, the device resistance was 11.0Ω because the film thickness was as thin as 15 nm.
, The resistance change amount is as small as 0.06Ω. By using the above-described antiferromagnetic material having a relatively large specific resistance, the element resistance can be appropriately increased and the amount of change in resistance can be increased.
The thickness of PtMn is set to 30 n as in the present invention.
m or more, the resistance change amount is improved, and 0.2
Beyond Ω. For example, in sample No. 5, PtMn
Is 40 nm, the element resistance is 30.5Ω and the resistance change amount is 0.21Ω.

In the laminated film, samples No. 6 to No. 11
Each of the laminated films has a resistance change amount of 0.2 Ω or more. For example, the sample No. 9 of PtMn (5 nm) / Ni
A laminated film in which O (5 nm) is laminated in three layers has an element resistance of 5
8.1Ω and the resistance change amount is 0.31. on the other hand,
PtMn (5 nm) / NiO of Comparative Sample No. 20
(15 nm) has a high resistance change amount of 0.49, but has a high film thickness of 60 nm. In particular, the total film thickness of the NiO layer, which is an insulating film, is as large as 45 nm. 102.3Ω is too large. Further, as in the sample No. 21 of the comparative example, PtMn (5 nm) / Al ₂ O
₃ (3.5 nm) is formed by stacking three layers of Al ₂ O ₃
Since the specific resistance of Al ₂ O ₃ itself is high even when the film thickness is as thin as 3.5 nm, the element resistance is as high as 10000Ω. As described above, when the element resistance becomes too large, a problem of heat generation occurs, which adversely affects the m element. Therefore, by using a laminated film of the antiferromagnetic material having the above-described configuration as the antiferromagnetic film, the element resistance can be appropriately increased and the amount of change in resistance can be increased.

In the dispersion film, samples No. 12 to No. 1 were used.
Since each dispersion film of No. 8 has a thickness of 30 nm, the element resistance does not become excessively large, approximately 30Ω to 50Ω,
Nevertheless, the resistance change amount can be secured to 0.2Ω or more. On the other hand, the sample No. 22 of PtMn and Al ₂ O
₃ is dispersed, and when the film thickness is 50 nm, the element resistance is 89.2 due to the increase in the film thickness.
Ω is excessively large. Particularly high resistance Al ₂ O ₃
Has contributed, and the element resistance has risen excessively. Therefore, by using the dispersion film of the antiferromagnetic material having the above-described configuration, the element resistance is not excessively increased to about 30Ω to 50Ω, and the resistance change amount can be secured to 0.2Ω or more. The element resistance can be appropriately increased, and the resistance change amount can be increased.

Next, an example of a magnetic random access memory (MRAM) device of the present invention will be described with reference to a schematic configuration perspective view shown in FIG. 5A and a circuit diagram shown in FIG.

As shown in (1) and (2) of FIG.
The AM device 101 includes a plurality of word lines 111 arranged in parallel and a plurality of bit lines 12 arranged in parallel with each other and intersecting the word lines 111 at a predetermined interval.
1 is provided. A memory cell 131 is arranged in each region where the word line 111 and the bit line 121 intersect. That is, the memory cells 131 are arranged in a matrix.

The memory cell 131 has a configuration in which, for example, a CPP type GMR element 141 and a diode 151 are arranged in series. The CPP type GMR element 141 is connected to the word line 111, and the diode 151 is connected to the bit line 121. It is connected to the. In addition, the diode 151
Restricts the current Is flowing through the CPP type GMR element 141 from flowing from the word line 111 to the bit line 121.

The CPP type GMR element is similar to that shown in FIGS.
The structure of FIG. 4 is used, and the antiferromagnetic layer of the present invention as described above is used.

In the magnetic random access memory device 101 having the above-described configuration, the CPP type GMR element 141 is formed by the combined magnetic field of the current magnetic field generated by the current Iw flowing through the word line 111 and the current magnetic field generated by the current Ib flowing through the bit line 121.
The magnetization direction of the magnetization free layer is inverted, and the magnetization direction can be recorded as information “1” or “0”. To read the recorded information, GMR
By utilizing the effect, the direction of the magnetization of the magnetization free layer is read from the magnitude of the sense current Is flowing through the CPP type GMR element 141, thereby making it correspond to the direction of the magnetization.
Alternatively, the information "0" is read.

In the MRAM device having the above configuration, the memory cell selected as described above is connected to the word line 11.
When the current magnetic fields of both 1 and bit line 121 are applied, the magnetization direction of the magnetization free layer is reversed. on the other hand,
Since the current magnetic field of only one of the word line 111 and the bit line 121 is applied to the unselected memory cells, the direction of the magnetization is not reversed. Therefore, recording can be performed only on the selected memory cell.

[0050]

As described above, according to the magnetoresistance effect element of the present invention, the antiferromagnetic layer adjacent to the fixed layer is formed of a high-resistance antiferromagnetic layer. Can be increased to 30,000 μΩμm ² or more. As a result, the element resistance contributing to the resistance change increases, and the resistance change amount can be improved very efficiently. Therefore, it is possible to provide a high-sensitivity magnetoresistive element corresponding to a high recording density region that cannot be achieved by the conventional technology. In addition, by using the magnetoresistive element of the present invention, it is possible to obtain a high-sensitivity and high-performance magnetoresistive sensor and a magnetoresistive head corresponding to a high recording density region. It becomes possible to obtain a reproduction system.

According to the magnetic random access memory device of the present invention, the antiferromagnetic layer of the magnetoresistive element used therein has the structure of the present invention, so that the normalization of the antiferromagnetic layer in the direction perpendicular to the plane is performed. The resistance can be increased to 30,000 μΩμm ² or more. As a result, the element resistance contributing to the resistance change increases, and the resistance change amount can be improved very efficiently. Therefore, the operation of recording information in the memory cell and the operation of reading information recorded in the memory cell can be performed stably. Therefore, a highly reliable magnetic random access memory device can be provided.

[Brief description of the drawings]

FIG. 1 is a schematic sectional view showing one embodiment of a magnetoresistive element according to the present invention.

FIG. 2 is a schematic sectional view showing one embodiment of the magnetoresistive element of the present invention.

FIG. 3 is a schematic sectional view showing one embodiment of the magnetoresistive element of the present invention.

FIG. 4 is a schematic sectional view showing one embodiment of the magnetoresistive element of the present invention.

FIG. 5 is a schematic configuration perspective view and a circuit diagram showing one embodiment of a magnetic random access memory device according to the present invention.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... Simple type single spin valve film, 11 ... Antiferromagnetic layer, 12 ... Fixed layer, 13 ... Non-magnetic layer, 14 ... Free layer

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat ゛ (Reference) H01F 10/14 H01F 10/14 10/30 10/30 10/32 10/32 H01L 27/105 H01L 27 / 10 447

Claims (36)

[Claims] 1. A spin valve film in which a free layer, a nonmagnetic layer, a fixed layer, and an antiferromagnetic layer are sequentially laminated, or an antiferromagnetic layer, a fixed layer, a nonmagnetic layer, a free layer, and a nonmagnetic layer. A magnetoresistive effect element comprising a spin valve film in which a fixed layer and an antiferromagnetic layer are sequentially stacked, wherein the sense current flows in a direction perpendicular to the film surface; , Manganese oxide (I
A magnetoresistive element comprising I), nickel (II) oxide or iron (II) sulfide. 2. The antiferromagnetic layer has a thickness of at least 30 nm.
The magnetoresistive element has a thickness less than or equal to a thickness that does not cause thermal damage due to heat generated when a current flows through the antiferromagnetic layer. The magnetoresistive element according to claim 1, wherein: 3. A spin valve film in which a free layer, a nonmagnetic layer, a fixed layer, and an antiferromagnetic layer are sequentially stacked, or an antiferromagnetic layer, a fixed layer, a nonmagnetic layer, a free layer, and a nonmagnetic layer. A magnetoresistive effect element comprising a spin-valve film in which a fixed layer and an antiferromagnetic layer are sequentially stacked, wherein a sense current flows in a direction perpendicular to the film surface; wherein the antiferromagnetic layer is a platinum-manganese layer, iridium A magnetoresistive element comprising at least two layers of a metal antiferromagnetic layer group including a manganese layer, an iron manganese layer, and a nickel manganese layer. 4. The antiferromagnetic layer has a thickness of at least 30 nm.
The magnetoresistive element has a thickness less than or equal to a thickness that does not cause thermal damage due to heat generated when a current flows through the antiferromagnetic layer. 4. The magnetoresistance effect element according to claim 3, wherein: 5. A spin valve film in which a free layer, a nonmagnetic layer, a fixed layer, and an antiferromagnetic layer are sequentially laminated, or an antiferromagnetic layer, a fixed layer, a nonmagnetic layer, a free layer, and a nonmagnetic layer. A magnetoresistive effect element comprising a spin valve film in which a fixed layer and an antiferromagnetic layer are sequentially stacked, wherein the sense current flows in a direction perpendicular to the film surface. Layer, manganese (II) oxide layer, nickel oxide
A magnetoresistive element comprising at least two layers of a nonmetallic antiferromagnetic layer group comprising a (II) layer and an iron (II) sulfide layer. 6. The antiferromagnetic layer has a thickness of at least 30 nm.
The magnetoresistive element has a thickness less than or equal to a thickness that does not cause thermal damage due to heat generated when a current flows through the antiferromagnetic layer. The magneto-resistance effect element according to claim 5, wherein: 7. A spin valve film in which a free layer, a nonmagnetic layer, a fixed layer, and an antiferromagnetic layer are sequentially stacked, or an antiferromagnetic layer, a fixed layer, a nonmagnetic layer, a free layer, and a nonmagnetic layer. A magnetoresistive effect element comprising a spin-valve film in which a fixed layer and an antiferromagnetic layer are sequentially stacked, wherein a sense current flows in a direction perpendicular to the film surface; wherein the antiferromagnetic layer is a platinum-manganese layer, iridium At least one layer of a metal antiferromagnetic layer group consisting of a manganese layer, an iron manganese layer, and a nickel manganese layer; an α-type iron sesquioxide layer, a manganese (II) oxide layer, and a nickel oxide layer
A magnetoresistive effect element comprising a layer obtained by laminating at least one or more layers of a nonmetallic antiferromagnetic layer group composed of a (II) layer and an iron (II) sulfide layer. 8. The antiferromagnetic layer has a thickness of at least 30 nm.
The magnetoresistive element has a thickness less than or equal to a thickness that does not cause thermal damage due to heat generated when a current flows through the antiferromagnetic layer. The magnetoresistive element according to claim 7, wherein: 9. A spin valve film in which a free layer, a nonmagnetic layer, a fixed layer, and an antiferromagnetic layer are sequentially stacked, or an antiferromagnetic layer, a fixed layer, a nonmagnetic layer, a free layer, and a nonmagnetic layer. A magnetoresistive effect element comprising a spin valve film in which a fixed layer and an antiferromagnetic layer are sequentially laminated, wherein the sense current flows in a direction perpendicular to the film surface; wherein the antiferromagnetic layer comprises platinum manganese, iridium manganese A magnetoresistive element, wherein at least two or more members of a metal antiferromagnetic material group consisting of iron manganese and nickel manganese are dispersed. 10. The antiferromagnetic layer has a thickness of at least 30n.
m, and the thickness of the magnetoresistive element is not more than a thickness that does not cause thermal damage due to heat generated when a current flows through the antiferromagnetic layer. The magnetoresistance effect element according to claim 9, wherein: 11. A spin valve film in which a free layer, a nonmagnetic layer, a fixed layer, and an antiferromagnetic layer are sequentially stacked, or an antiferromagnetic layer, a fixed layer, a nonmagnetic layer, a free layer, and a nonmagnetic layer. A magnetoresistive effect element comprising a spin valve film in which a fixed layer and an antiferromagnetic layer are sequentially stacked, wherein the sense current flows in a direction perpendicular to the film surface. , Manganese (II) oxide, nickel (II) oxide
And a non-metallic antiferromagnetic material group comprising iron (II) sulfide and at least two kinds thereof dispersed therein. 12. The antiferromagnetic layer has at least 30n.
m, and the thickness of the magnetoresistive element is not more than a thickness that does not cause thermal damage due to heat generated when a current flows through the antiferromagnetic layer. The magnetoresistive element according to claim 11, wherein: 13. A spin valve film in which a free layer, a nonmagnetic layer, a fixed layer, and an antiferromagnetic layer are sequentially stacked, or an antiferromagnetic layer, a fixed layer, a nonmagnetic layer, a free layer, and a nonmagnetic layer. A magnetoresistive effect element comprising a spin valve film in which a fixed layer and an antiferromagnetic layer are sequentially laminated, wherein the sense current flows in a direction perpendicular to the film surface; wherein the antiferromagnetic layer comprises platinum manganese, iridium manganese , Iron manganese and nickel manganese, at least one of a group of metal antiferromagnetic substances, α-type iron sesquioxide, manganese (II) oxide, nickel (II) oxide
And a non-metallic antiferromagnetic material group comprising iron (II) sulfide and at least one non-metallic antiferromagnetic material. 14. The antiferromagnetic layer has a thickness of at least 30n.
m, and the thickness of the magnetoresistive element is not more than a thickness that does not cause thermal damage due to heat generated when a current flows through the antiferromagnetic layer. The magnetoresistive element according to claim 13, wherein: 15. A spin valve film in which a free layer, a nonmagnetic layer, a fixed layer, and an antiferromagnetic layer are sequentially stacked, or an antiferromagnetic layer, a fixed layer, a nonmagnetic layer, a free layer, and a nonmagnetic layer. A magnetoresistive effect element comprising a spin valve film in which a fixed layer and an antiferromagnetic layer are sequentially laminated, wherein the sense current flows in a direction perpendicular to the film surface; wherein the antiferromagnetic layer comprises platinum manganese, iridium manganese , At least one or more of a group of metal antiferromagnetic materials consisting of iron manganese and nickel manganese, and at least one or more of a group of non-antiferromagnetic materials consisting of aluminum oxide, silicon oxide, iron sesquioxide and titanium carbide A magnetoresistive effect element characterized by dispersing. 16. The antiferromagnetic layer has a thickness of at least 30n.
m, and the thickness of the magnetoresistive element is not more than a thickness that does not cause thermal damage due to heat generated when a current flows through the antiferromagnetic layer. The magnetoresistance effect element according to claim 15, wherein: 17. A spin valve film in which a free layer, a nonmagnetic layer, a fixed layer, and an antiferromagnetic layer are sequentially stacked, or an antiferromagnetic layer, a fixed layer, a nonmagnetic layer, a free layer, and a nonmagnetic layer. A magnetoresistive effect element comprising a spin valve film in which a fixed layer and an antiferromagnetic layer are sequentially stacked, wherein a sense current flows in a direction perpendicular to the spin valve film surface; Iron sesquioxide, manganese (II) oxide, nickel (II) oxide
And at least one of a group of non-metallic antiferromagnetic materials consisting of iron and iron sulfide and at least one of a group of non-antiferromagnetic materials consisting of aluminum oxide, silicon oxide, iron sesquioxide and titanium carbide And a magnetoresistive effect element, wherein the element is dispersed. 18. The antiferromagnetic layer has a thickness of at least 30n.
m, and the thickness of the magnetoresistive element is not more than a thickness that does not cause thermal damage due to heat generated when a current flows through the antiferromagnetic layer. The magnetoresistance effect element according to claim 17, wherein: 19. A spin valve film in which a free layer, a nonmagnetic layer, a fixed layer, and an antiferromagnetic layer are sequentially stacked, or an antiferromagnetic layer, a fixed layer, a nonmagnetic layer, a free layer, and a nonmagnetic layer. A magnetic random access memory device using a magnetoresistive element, comprising a spin valve film in which a fixed layer and an antiferromagnetic layer are sequentially stacked, wherein a sense current flows in a direction perpendicular to the film surface. The layer consists of α-type iron sesquioxide, manganese oxide (I
A magnetic random access memory device comprising: (I) nickel (II) oxide or iron (II) sulfide. 20. The antiferromagnetic layer has at least 30 n
m, and the thickness of the magnetoresistive element is not more than a thickness that does not cause thermal damage due to heat generated when a current flows through the antiferromagnetic layer. 20. The magnetic random access memory device according to claim 19, wherein: 21. A spin valve film in which a free layer, a nonmagnetic layer, a fixed layer, and an antiferromagnetic layer are sequentially stacked, or an antiferromagnetic layer, a fixed layer, a nonmagnetic layer, a free layer, and a nonmagnetic layer. A magnetic random access memory device using a magnetoresistive element, comprising a spin valve film in which a fixed layer and an antiferromagnetic layer are sequentially stacked, wherein a sense current flows in a direction perpendicular to the film surface. The magnetic random access memory characterized in that the layer is formed by stacking at least two or more layers of a metal antiferromagnetic layer group consisting of a platinum manganese layer, an iridium manganese layer, an iron manganese layer and a nickel manganese layer. apparatus. 22. The antiferromagnetic layer has a thickness of at least 30n.
m, and the thickness of the magnetoresistive element is not more than a thickness that does not cause thermal damage due to heat generated when a current flows through the antiferromagnetic layer. 22. The magnetic random access memory device according to claim 21, wherein: 23. A spin valve film in which a free layer, a nonmagnetic layer, a fixed layer, and an antiferromagnetic layer are sequentially stacked, or an antiferromagnetic layer, a fixed layer, a nonmagnetic layer, a free layer, and a nonmagnetic layer. A magnetic random access memory device using a magnetoresistive element, comprising a spin valve film in which a fixed layer and an antiferromagnetic layer are sequentially stacked, wherein a sense current flows in a direction perpendicular to the film surface. The layers are α-type iron sesquioxide layer, manganese (II) oxide layer, nickel oxide
A magnetic random access memory device comprising a stack of at least two or more layers of a nonmetallic antiferromagnetic layer group consisting of a (II) layer and an iron (II) sulfide layer. 24. The antiferromagnetic layer has at least 30 n
m, and the thickness of the magnetoresistive element is not more than a thickness that does not cause thermal damage due to heat generated when a current flows through the antiferromagnetic layer. The magnetic random access memory device according to claim 23, wherein: 25. A spin valve film in which a free layer, a nonmagnetic layer, a fixed layer, and an antiferromagnetic layer are sequentially stacked, or an antiferromagnetic layer, a fixed layer, a nonmagnetic layer, a free layer, and a nonmagnetic layer. A magnetic random access memory device using a magnetoresistive element, comprising a spin valve film in which a fixed layer and an antiferromagnetic layer are sequentially stacked, wherein a sense current flows in a direction perpendicular to the film surface. The layers are at least one of a metal antiferromagnetic layer group consisting of a platinum manganese layer, an iridium manganese layer, an iron manganese layer, and a nickel manganese layer; an α-type iron sesquioxide layer and a manganese (II) oxide layer , Nickel oxide
A magnetic random access memory device comprising a laminated structure of at least one layer of a nonmetallic antiferromagnetic layer group consisting of a (II) layer and an iron (II) sulfide layer. 26. The antiferromagnetic layer has at least 30 n
m, and the thickness of the magnetoresistive element is not more than a thickness that does not cause thermal damage due to heat generated when a current flows through the antiferromagnetic layer. 26. The magnetic random access memory device according to claim 25, wherein: 27. A spin valve film in which a free layer, a nonmagnetic layer, a fixed layer, and an antiferromagnetic layer are sequentially stacked, or an antiferromagnetic layer, a fixed layer, a nonmagnetic layer, a free layer, and a nonmagnetic layer. A magnetic random access memory device using a magnetoresistive element, comprising a spin valve film in which a fixed layer and an antiferromagnetic layer are sequentially stacked, wherein a sense current flows in a direction perpendicular to the film surface. A magnetic random access memory device characterized in that the layer is formed by dispersing at least two or more of a group of metal antiferromagnetic substances consisting of platinum manganese, iridium manganese, iron manganese and nickel manganese. 28. The antiferromagnetic layer has a thickness of at least 30n.
m, and the thickness of the magnetoresistive element is not more than a thickness that does not cause thermal damage due to heat generated when a current flows through the antiferromagnetic layer. 28. The magnetic random access memory device according to claim 27, wherein: 29. A spin valve film in which a free layer, a nonmagnetic layer, a fixed layer, and an antiferromagnetic layer are sequentially stacked, or an antiferromagnetic layer, a fixed layer, a nonmagnetic layer, a free layer, and a nonmagnetic layer. A magnetic random access memory device using a magnetoresistive element, comprising a spin valve film in which a fixed layer and an antiferromagnetic layer are sequentially stacked, wherein a sense current flows in a direction perpendicular to the film surface. The layer consists of α-type iron sesquioxide, manganese (II) oxide, nickel (II) oxide
And a non-metallic antiferromagnetic material group comprising iron (II) sulfide and at least two kinds thereof dispersed therein. 30. The antiferromagnetic layer has a thickness of at least 30n.
m, and the thickness of the magnetoresistive element is not more than a thickness that does not cause thermal damage due to heat generated when a current flows through the antiferromagnetic layer. 30. The magnetic random access memory device according to claim 29, wherein: 31. A spin valve film in which a free layer, a nonmagnetic layer, a fixed layer, and an antiferromagnetic layer are sequentially stacked, or an antiferromagnetic layer, a fixed layer, a nonmagnetic layer, a free layer, and a nonmagnetic layer. A magnetic random access memory device using a magnetoresistive element, comprising a spin valve film in which a fixed layer and an antiferromagnetic layer are sequentially stacked, wherein a sense current flows in a direction perpendicular to the film surface. The layer is made of at least one of a group of metal antiferromagnets consisting of platinum manganese, iridium manganese, iron manganese and nickel manganese, and α-type iron sesquioxide, manganese (II) oxide, nickel (II) oxide
And a non-metallic antiferromagnetic material group comprising iron (II) sulfide and at least one of them. 32. The antiferromagnetic layer has at least 30n
m or more, and the thickness of the magnetoresistive element is not more than a thickness that does not cause thermal damage due to heat generated when a current flows through the antiferromagnetic layer. 32. The magnetic random access memory device according to claim 31, wherein: 33. A spin valve film in which a free layer, a nonmagnetic layer, a fixed layer, and an antiferromagnetic layer are sequentially stacked, or an antiferromagnetic layer, a fixed layer, a nonmagnetic layer, a free layer, and a nonmagnetic layer. A magnetic random access memory device using a magnetoresistive element, comprising a spin valve film in which a fixed layer and an antiferromagnetic layer are sequentially stacked, wherein a sense current flows in a direction perpendicular to the film surface. The layer is made of at least one metal antiferromagnetic group consisting of platinum manganese, iridium manganese, iron manganese and nickel manganese, and a non-antiferromagnetic group consisting of aluminum oxide, silicon oxide, iron sesquioxide and titanium carbide. Characterized in that at least one of the magnetic random access memories is dispersed. 34. The antiferromagnetic layer has at least 30 n
m or more, and the thickness of the magnetoresistive element is not more than a thickness that does not cause thermal damage due to heat generated when a current flows through the antiferromagnetic layer. 34. The magnetic random access memory device according to claim 33, wherein: 35. A spin valve film in which a free layer, a nonmagnetic layer, a fixed layer, and an antiferromagnetic layer are sequentially stacked, or an antiferromagnetic layer, a fixed layer, a nonmagnetic layer, a free layer, and a nonmagnetic layer. A magnetic random access memory device using a magnetoresistive element including a spin valve film in which a fixed layer and an antiferromagnetic layer are sequentially stacked, and wherein a sense current flows in a direction perpendicular to the spin valve film surface; The antiferromagnetic layer is composed of α-type iron sesquioxide, manganese oxide (II), nickel oxide (II)
And at least one of a group of non-metallic antiferromagnetic materials consisting of iron and iron sulfide and at least one of a group of non-antiferromagnetic materials consisting of aluminum oxide, silicon oxide, iron sesquioxide and titanium carbide And a magnetic random access memory device. 36. The antiferromagnetic layer has at least 30 n
m, and the thickness of the magnetoresistive element is not more than a thickness that does not cause thermal damage due to heat generated when a current flows through the antiferromagnetic layer. 36. The magnetic random access memory device according to claim 35, wherein: