JP2002348656A - Vapor deposition preventing device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a vapor deposition preventing device for preventing vapor from depositing on an optical window of a vapor deposition equipment, which solves such a problem that vaporized particles which have not deposited on the plate to be deposited area apt to deposit on the optical window of the conventional vapor deposition equipment for forming a semiconductor thin film, consequently make operating time short, require a long time to remove themselves, and reduce an efficiency for forming the thin film. SOLUTION: The vapor deposition preventing device comprises a vapor deposition preventing part for exhausting the vaporized particles which have not deposited on the plate to be deposited, where the optical window communicates with a vacuum vessel above which the plate for depositing vaporized particles generated by melting is arranged, a gas spouting means for spouting a low temperature gas toward the vaporized particles, which is orthogonally arranged against a flying direction of the vaporized particles flying toward the optical window facing to the vapor deposition preventing part, and a gas suction means for retaining the vacuum vessel in a predetermined vacuum state, by exhausting the spouted low temperature gas out.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an observation window and an optical window of a vacuum evaporation apparatus for forming a semiconductor thin film and the like on a surface of a substrate arranged in a vacuum vessel, and a reflection mirror and the like installed in the apparatus. The present invention relates to a deposition preventing device for preventing semiconductor vapor or the like from adhering to an optical window.

[0002]

BACKGROUND ART IC chips, in order to form a semiconductor thin film or the like to produce a TFT or solar cells, silicon S _i, the semiconductor which is generated by melting a specimen made of a semiconductor such as gallium G _a vacuum vessel 2. Description of the Related Art Conventionally, vapor-deposited particles made of vapor or the like are vapor-deposited on the surface of a vapor deposition plate serving as a substrate provided in a vacuum vessel.

FIG. 6 is a sectional view schematically showing a conventional vacuum vapor deposition apparatus provided with a laser device for measuring a vapor density. In the figure, 101 is a vacuum vessel, 106 is a laser beam 108
A mirror for reflecting a laser beam 108 transmitted through the vapor 105 in the vacuum vessel 101;
Reference numerals 112 and 113 denote optical windows through which the laser beam 108 passes and isolate the inside of the vacuum chamber 101 from the outside.
Reference numeral 1 denotes a vapor enclosing device for enclosing vapor (evaporated particles) 105 flying to a portion other than the surface of the evaporation plate 104 forming a thin film.
Reference numeral 14 denotes a transmitted light intensity measuring device for measuring the intensity of the laser beam 108 transmitted through the vapor 105 and evaluating the vapor density.

[0006] As shown in FIG. 6, a crucible 102 is provided below a vacuum vessel 101.
S _i in 02, the electron gun A that irradiates the specimen 103 made of a semiconductor such as G _a is mounted on the lower side of the vacuum vessel 101. In addition, a vacuum exhaust device (not shown) is attached,
The inside of the vacuum vessel 101 is maintained in a high vacuum state. By the electron beam B launched by the electron gun A,
The specimen 103 in the crucible 102 is heated at a high temperature to generate a vapor 105 of the specimen 103 component. Then, the evaporated steam 105 is transferred to the crucible 1 above the crucible 102.
The film is deposited on the surface of the vapor deposition plate 104 placed above the substrate 02.

Further, in order to reduce the amount of steam 105 flying inside the vacuum vessel 101 in a direction other than the surface of the vapor deposition plate 104,
An opening is provided above the crucible 102, and the vapor enclosing device 111, in which the vapor deposition plate 105 is accommodated inside, is connected to the vacuum vessel 10
1 and the vacuum vessel 101 outside the steam enclosing device 111.
The vapor is prevented from flying inside, and the vapor deposition efficiency of the vapor 105 on the vapor deposition plate 104 is improved. The laser beam 108 for measuring the vapor density is emitted from a laser device 106 installed at the center side of the vacuum vessel 101 and adjusted to the resonance absorption wavelength of the vapor 105, The steam enters the steam sealing device 111 through an opening provided in the steam sealing device 111, and passes through the steam sealing device 111 in which a lot of steam 105 is flying while irradiating the steam 105.

The laser beam 10 transmitted through the vapor 105
Reference numeral 8 denotes an optical window 113 which is emitted from an opening provided opposite to the opening on the incident side of the vapor sealer 111 and which is provided on the side opposite to the optical window 112 provided on the side wall of the vacuum vessel 101.
From outside the vacuum vessel 101, but in order to reduce restrictions on the installation location, as shown in the figure, the emission direction of the vapor deposition particles 107 going out of the vacuum vessel 101 is changed by the reflection mirror 110. As described above, the laser beam 108 is adjusted to the resonance absorption wavelength of the vapor 105 and is emitted into the vacuum vessel 101.
When passing through the inside, the laser beam 108 is absorbed, and the intensity of the transmitted laser beam 108 becomes weaker according to the density of the vapor 105.

The transmitted laser light 108 is measured by a transmitted light intensity measuring device 114, and the intensity of the laser light 108 transmitted through the
The absorption amount of the laser beam 108 into the inside 5 is calculated, and the steam density of the steam 105 in the vacuum vessel 101 is evaluated based on the calculation result. An observation window 115 is provided on the upper side of the vacuum vessel 101, and the vacuum vessel 10 is opened from the observation window 115 through a hole formed in the vapor sealer 111.
By observing the state of the vapor deposition plate 104 in 1 with the naked eye or a CCD camera, the vapor deposition on the vapor deposition plate 104, that is, the state of formation of a thin film formed on the vapor deposition plate 104 can be confirmed. ing.

However, in the conventional vacuum vapor deposition apparatus having such a configuration, the opening provided in the vapor enclosing device 111, that is, the opening provided so that the state of the vapor deposition plate 104 and the like can be confirmed from the observation window 115, and the laser. From an opening provided for transmitting light 108 into the vapor 105,
Steam 105, steam enclosing device 111 and vapor deposition plate 104
Evaporable impurities and adsorbed components contained in the vaporized particles 1
07 and flows out of the steam enclosing device 111 to
09, etc., fly inside the vacuum vessel 101 outside the vapor enclosing device 111, and vapor-deposit on an optical window in a broad sense, which includes an observation window 115, optical windows 112, 113, a mirror 110, and the like.

Therefore, the observation window 115, the optical window 112,
The transmittance of 113, the reflectance of mirror 110, etc.
As the optical transmittance in a broad sense deteriorates, the situation confirmation through the observation window 115 of the steam plate 104 becomes insufficient, and the intensity of the laser beam 108 measured by the transmitted light intensity measuring device 114 is reduced. And the accuracy of measuring the steam density of the steam 105, which is calculated from the measurement result of the intensity, becomes extremely poor.

[0010] Therefore, the operation time of the vacuum evaporation apparatus is limited to a very short time.
The vacuum vessel 101 in a high vacuum is brought to the atmospheric pressure state, and the vaporized particles 107 deposited on the optical windows in a broad sense such as the observation window 115, the optical windows 112 and 113, and the mirror 110 are wiped off, and the laser beam 108 and From observation window 115 to vapor deposition plate 10
After the observation light applied to the light source 4 or the like can be sufficiently transmitted, the inside of the vacuum vessel 101 needs to be set to a predetermined high vacuum suitable for performing vacuum deposition. In addition, there is a problem in that the time required for establishing a high vacuum state becomes longer, and the work efficiency of forming a thin film on the vapor deposition plate 104 becomes extremely poor.

[0011]

SUMMARY OF THE INVENTION The present invention has been made in order to solve the above-mentioned problems occurring in the conventional vacuum evaporation apparatus.
Vapor deposition on the evaporation plate can be reduced on the observation window, optical window, mirror, etc., and the operation time of the vacuum evaporation device can be extended, and maintenance required for re-operation etc. It is an object of the present invention to provide a vapor deposition preventing device capable of shortening the time required for forming a thin film, shortening the time required for forming a thin film, and improving the work efficiency.

[0012]

Therefore, the vapor deposition preventing apparatus of the present invention has the following means.

(1) an observation window provided in a vacuum evaporation apparatus;
The evaporation particles are deposited on the transmission window for transmitting the measuring laser beam or the optical window in a broad sense including a mirror for deflecting the laser beam, and the optical transmittance in a broad sense including the reflectance is reduced. In order to prevent vapor deposition particles generated by melting semiconductors and the like in a crucible installed below, a vacuum container for vacuum vapor deposition on a vapor deposition plate installed above and an optical window in a broad sense described above. A cylindrical evaporation preventing portion for discharging the evaporation particles flying in the vacuum vessel to the outside without vacuum evaporation on the evaporation plate was provided.

(2) The inside of the deposition prevention section is arranged in a direction perpendicular to the direction of the flow of the deposition particles flying from the vacuum vessel toward the optical window, and is perpendicular to the flow of the deposition particles flying in the deposition prevention section. In addition, a gas ejection means for ejecting a low-temperature gas is provided. In addition, even if the gas jetting means is provided with a supersonic nozzle that blows the low-temperature gas in the buffer tank at supersonic speed toward the vapor deposition particles, the gas jetting means is bored on the wall surface of the vapor deposition preventing unit, The slit may be configured to blow the low-temperature gas toward the flying vapor deposition particles. Further, when a slit is used as the gas ejection means, it is preferable that the low-temperature gas in the buffer tank be further cooled so that the lower-temperature low-temperature gas is blown toward the deposition particles.

(3) The low-temperature gas ejected toward the vapor deposition particles flowing in the vapor deposition prevention section is discharged from the vapor deposition prevention section to the outside, and the degree of vacuum in the vacuum vessel is suitable for vapor deposition of the vapor deposition particles on the vapor deposition plate. Gas suction means for maintaining the degree of vacuum was provided. The gas suction means is provided with a turbo-molecular pump provided with a suction port opened at a position where the low-temperature gas containing vapor-deposited particles is discharged from the inside of the deposition prevention section to the outside, and the low-temperature gas is discharged to the outside through the discharge port of the turbo-molecular pump. And a rotary valve, and a gate valve is preferably provided between the inside of the evaporation preventing section and the suction port of the turbo molecular pump.

(A) As described above, the vapor deposition preventing apparatus according to the present invention employs the above-mentioned means (1) to (3), so that the vacuum sealing device can be used without vapor deposition on the vapor deposition plate provided in the vacuum vessel. The vaporized particles that come out of and fly outside are pushed to the suction side of the turbo-molecular pump by the low-temperature gas jetted from the gas jetting means when flying inside the evaporation prevention section, and the turbo-molecular pump etc. together with the low-temperature gas Can be discharged outside.

Further, even if a supersonic nozzle or a slit is used as the gas jetting means, when the supersonic nozzle is used, the low-temperature gas is further reduced due to adiabatic expansion when the low-temperature gas is made supersonic. When the slit is used, the low temperature gas in the buffer tank is further cooled when the slit is used, so that the vapor deposition particles can be cooled effectively and the specific gravity can be made higher. Can be effectively discharged to the outside together with the low-temperature gas, and the amount of vapor-deposited particles deposited on the optical window can be more effectively reduced.

As a result, the operation time of the vacuum deposition apparatus can be extended, the number of evacuations in the vacuum vessel requiring a long operation required for re-operation can be reduced, and the operation required for re-operation can be reduced. It is possible to reduce the maintenance time of the vacuum evaporation apparatus such as removing the evaporation particles deposited on the optical window. Also, by balancing the flow rate of the low-temperature gas ejected from the gas ejection means into the flow of the vapor deposition particles and the flow rate of the low-temperature gas containing the vapor deposition particles discharged from the gas suction means to the outside, the degree of vacuum in the vacuum vessel is reduced. Vacuum suitable for depositing vapor deposition particles on the vapor deposition plate can be maintained.
Thus, the efficiency of forming a thin film by depositing deposition particles on a deposition plate can be improved, and a vacuum deposition apparatus capable of forming an inexpensive thin film can be provided.

The second aspect of the present invention provides the following means.

(4) Optics in a broad sense consisting of an observation window, a transmission window for transmitting a laser beam for measurement, or a mirror for deflecting the laser beam, which is provided in the vapor deposition apparatus for grasping the situation in the vacuum vessel. Vapor deposition particles are deposited on the window, and in order to prevent a decrease in optical transmittance in a broad sense including reflectance as well, vapor deposition particles generated by melting a semiconductor or the like in a crucible installed below are removed. A cylindrical deposition preventing portion was provided in which a vacuum vessel on which a vapor deposition plate for vacuum vapor deposition was installed was communicated with the above-described optical window.

(5) Electrons are disposed in the deposition prevention section in a direction orthogonal to the flow direction of the deposition particles flying from the vacuum vessel toward the optical window, and are directed toward the flow of the deposition particles flying in the deposition prevention section. Irradiation of electromagnetic waves consisting of, for example, arc or laser light, and collision of the electromagnetic waves with the vapor-deposited particles to separate the charges held by the vapor-deposited particles, making it difficult to vapor-deposit on the optical window, and reducing vapor deposition. A means for generating ionized vapor deposition particles into particles was provided.

The vapor deposition preventing apparatus according to the present invention is installed on the inner periphery of the vapor deposition preventing section between the optical window and a position where ionized vaporized particles flying from the vapor deposition preventing section are ionized and deposited. May be provided with an electrode plate for positively sucking the ionized deposition particles from which the electric charges have been separated by the electromagnetic waves.

(B) As described above, the vapor deposition preventing apparatus according to the present invention employs the above-mentioned means (4) and (5), so that the vapor sealing device can be used without vapor deposition on the vapor deposition plate provided in the vacuum vessel. In order to reduce the amount of vapor deposition particles that flow out and fly inside the vacuum vessel to the optical window, the ionized vapor deposition particle generation means is provided. It is possible to obtain ionized vapor-deposited particles having no charge that is difficult to be formed, and the amount of vapor-deposited particles sucked into the optical window and deposited on the optical window can be reduced.

If an electrode plate is provided on the inner periphery of the deposition preventing portion, ionized vapor deposition particles having no charge are positively attracted to the electrode plate to which a voltage is applied, so that the vaporized particles are deposited on the optical window. It is possible to reduce the number of deposited particles to be reduced. Furthermore, in order to separate the electric charge held by the vapor deposition particles into the flow of the vapor deposition particles flying in the vacuum vessel, a fluid such as the above-described low-temperature gas that breaks the degree of vacuum into the vapor deposition prevention section is not flown. The inside of the vacuum vessel without leakage from the seal portion can be maintained at a suitable degree of vacuum for vapor-depositing the vapor-deposited particles on the vapor-deposition plate without evacuating during the operation time of the vacuum vapor-deposition apparatus.

Further, if an electrode plate is provided on the inner periphery of the deposition preventing portion between the position where the vapor deposition particles flowing through the deposition preventing portion are ionized vapor deposition particles and the optical window, it is possible to apply a voltage to the electrode plate. Thereby, the ionized vapor deposition particles can be effectively attracted to the electrode plate, and the amount of the vapor deposition particles reaching the optical window and vapor deposition can be further reduced.

Thus, the operation time of the vacuum evaporation apparatus can be extended, the number of times of evacuation in the vacuum vessel required for re-operation can be reduced, and the evaporation deposited on the optical window required for re-operation can be performed. Able to reduce the maintenance time of vacuum deposition equipment such as particle removal, it is possible to improve the efficiency of thin film formation work by depositing deposition particles on a deposition plate and forming a thin film, and to form an inexpensive thin film It can be a vacuum deposition device capable of.

Further, a third evaporation preventing apparatus of the present invention employs the following means in addition to the above means (4) and (5).

(6) A means for generating ionized vapor deposition particles is provided on one side of the vapor deposition preventing portion formed in a cylindrical shape, and irradiates the vapor deposition particles to separate the electric charge held by the vapor deposition particles and separates them into ionized vapor deposition particles. And an electron gun for outputting an electron beam.

(7) An electron beam damper, which is provided on the other side surface of the evaporation preventing portion opposite to one side surface of the evaporation preventing portion on which the electron gun is arranged, and receives an electron beam output from the electron gun and irradiated with the evaporation particles. It was provided. In addition,
Since the electron beam damper may be heated and damaged by receiving the electron beam, it is preferable to provide a cooling device.

(C) As described above, the apparatus for preventing evaporation of the present invention employs the means (6) and (7) described above. When passing through the beam irradiating section, the electron beam collides with the electron beam and discharges the retained electric charges, so that the particles become ionized vapor-deposited particles.

Further, the fourth evaporation preventing apparatus of the present invention employs the following means in addition to the above means (4) and (5).

(8) The ionized vapor-deposited particle generating means applies vapor-deposited particles flying in a vapor-deposition preventing section in which electrodes are arranged to face each other.
A discharge electrode for generating an arc in the deposition particles by applying a voltage from the electrodes arranged opposite to each other is provided in the deposition prevention section.

(D) As described above, according to the means of the above (8), the vapor deposition preventing device of the present invention, in addition to the above (b), allows the vapor deposition particles flying in the vapor deposition preventing section to remain in the vapor deposition preventing section. When passing through the generated arc, the vapor-deposited particles that collide with the arc release retained charges, become ionized vapor-deposited particles, and reduce the deposition of vapor-deposited particles on the optical window.

Further, the fifth evaporation preventing apparatus of the present invention employs the following means in addition to the above means (4) and (5).

(9) The ionized vapor deposition particle generating means is provided on one side of the cylindrical vapor deposition prevention section, and is provided with a laser device for irradiating laser light to the vapor deposition particles flying inside the vapor deposition prevention section. .

(10) A beam damper is provided on the other side of the vapor deposition preventing section opposite to the laser device and receives the laser beam irradiated with the vapor deposition particles.

The laser device outputs laser light having an output density that does not cause breakdown of the vapor-deposited particles irradiated with the laser light in the air, and outputs the laser light in the vicinity of the optical window, that is, in the air or outside the optical window. A lens that is installed in the deposition prevention unit inside the lens and converges to the output density that causes the deposition particles to break down at the position where the laser light introduced into the deposition prevention unit is irradiated on the deposition particles flying in the deposition prevention unit. May be provided, or the laser beam output from the laser device and transmitted through the optical window and introduced into the deposition prevention unit, when directly irradiated on the vapor deposition particles, an output that causes a breakdown in the vapor deposition particles It is also possible to use a lens having a high density and not having a lens for convergence.

(E) As described above, according to the vapor deposition preventing apparatus of the present invention, by employing the means (9) and (10), in addition to the above (b), the vapor deposition particles flying in the vapor deposition preventing section are reduced.
When passing through the laser beam output into the deposition prevention section, the deposited particles collide with the laser beam and release the retained charges, become ionized deposited particles, and reduce the deposition of the deposited particles on the optical window. be able to.

Further, the laser device outputs a laser beam having an output density that does not cause breakdown to the vapor-deposited particles irradiated with the laser beam in the atmosphere, and is installed near the optical window to be introduced into the vapor deposition preventing section. By providing a lens that converges to an output density that causes breakdown of the deposited particles when the deposited particles are irradiated, a laser device having a small output density can be obtained.

[0040]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, an embodiment of a deposition preventing apparatus according to the present invention will be described with reference to the drawings. The same or similar members as those shown in FIG. 6 are denoted by the same reference numerals and description thereof will be omitted. FIG. 1 is a cross-sectional view schematically showing a mirror connecting portion as a deposition preventing portion of a vacuum deposition device as a first embodiment of the deposition preventing device of the present invention.

In the drawing, reference numeral 1 denotes a mirror connecting portion as a deposition preventing connecting portion connected to the vacuum vessel 101;
The vapor-deposited particles that have come to the mirror connecting portion 1 and the laser light 10
8 is a mirror that reflects light.

However, for simplicity of explanation, the illustrated mirror 4 is used to apply the laser beam 108 emitted from the laser device 106 described in the prior art to the vacuum vessel 101.
An optical window 112 for transmitting the laser beam 108 from the inside of the vacuum vessel 101 to the outside, a mirror 110 for reflecting the laser beam 108 that has passed through the steam 105 in the vapor enclosing device 111, and the vacuum vessel 101 from the outside. The observation window 115 for observing the state of the vapor deposition plate 104 and the like installed in the apparatus is shown as a representative.

Reference numeral 5 denotes a gas ejection means, 9 denotes a supersonic nozzle or a subsonic slit (hereinafter referred to as a supersonic nozzle) which constitutes a part of the gas ejection means, and 11 denotes a gas suction means. In order to solve the problem that has occurred in the above-described conventional vacuum vapor deposition apparatus, in the vapor deposition prevention apparatus of the present embodiment, the supersonic nozzle is provided on the front surface of the mirror 4 in the direction orthogonal to the direction in which the vapor deposition particles 107 fly. 9 is provided with a gas ejection means 5 for ejecting the low-temperature gas 3 by providing the low-temperature gas 3, and a gas suction means for sucking the low-temperature gas 3 on the side opposite to the opening of the supersonic nozzle 9 which is a gas ejection port. This is to prevent deposition of deposition particles.

In FIG. 1, the gas ejection means 5 includes a buffer tank 6 connected to the supersonic nozzle 9 and a gas supply source 7.
And a flow control valve 8 for controlling the flow rate of gas. The gas suction means 11 includes a gate valve 13 and a turbo molecular pump (hereinafter referred to as TMP) 14.
And a rotary pump 15, which is an auxiliary pump for operating the TMP 14. Also, TMP1
The gate valve 13 provided on the upstream side of 4 is for protecting the TMP 14.

When the low-temperature gas 3 is introduced into the buffer tank 6 through the flow control valve 8 in a state where the mirror connecting section 1 is evacuated together with the vacuum vessel 101, the low-temperature gas 3 is connected to the mirror through the supersonic nozzle 9. A supersonic or subsonic jet from the supersonic nozzle 9 is formed in the section 1 to form a low-temperature gas jet section 10 orthogonal to the flow direction of the vapor deposition particles 107. When the vapor deposition particles 107 flying from the vacuum vessel 101 toward the mirror 4 reach the vicinity of the low-temperature gas jetting unit 10, the vapor deposition particles 107 collide with the jetted low-temperature gas 3,
The trajectory changes and the inner wall 12 near the mirror 4 of the mirror connecting portion 1
And is collected as the supplementary deposited particles 2, so that deposition on the mirror 4 can be prevented.

By providing the supersonic nozzle 9 that makes the speed of the low-temperature gas 3 supersonic, the temperature of the low-temperature gas 3 is further reduced by adiabatic expansion, and the specific gravity is increased by lowering the temperature of the vapor deposition particles 107. The trapped vapor-deposited particles 2 are easily deposited on the inner wall of the mirror connecting portion 1, and together with the uniformity of the direction of the low-temperature gas 3, are easily collected by the TMP 14, so that the low-temperature gas 3 Backflow into the vacuum vessel is suppressed. When using a subsonic slit in which the low-temperature gas 3 has a subsonic speed, for example, in order to produce the same effect, the temperature of the low-temperature gas in the buffer tank 6 is previously lowered by a cooling device or the like. It is also effective.

TMP 14 constituting gas suction means 11
Collects the low-temperature gas 3 ejected from the supersonic nozzle 9,
The low-temperature gas 3 flows into the vacuum vessel 101 and the vacuum vessel 10
1 is provided so as not to lower the degree of vacuum. Therefore, the TMP 14 and the rotary pump 15 constituting the suction means may be replaced with a cold trap that solidifies and collects the ejected gas.

Next, FIG. 2 is a sectional view schematically showing a mirror connecting portion as a deposition preventing portion of a vacuum deposition device as a second embodiment of the deposition preventing device of the present invention. As shown in FIG. 2, in the present embodiment, an electron gun 21 capable of irradiating an electron beam 22 at right angles to the flow of the vapor deposition particles 107 is provided in the mirror connecting portion 1. Further, an electrode plate 24 is provided between the mirror 4 and the electron gun 21,
A positive or negative voltage is applied to form an electron beam irradiation field 26 orthogonal to the flow of the deposition particles 107. In addition, electron gun 2
The electron beam damper 25 provided on the side opposite to 1 receives the electron beam 22 emitted to ionize the vapor deposition particles 107, and includes a cooling unit for cooling heat generated by the electron beam 22.

The vapor deposition preventing apparatus according to the present embodiment is configured such that when the vapor deposition particles 107 pass through the electron beam irradiating section 26 irradiating the electron beam 22 with the vapor deposition particles 107 configured as described above and flowing toward the mirror 4, The particles 107 collide with the electrons of the electron beam 22 and are ionized. The ionized vapor deposition particles 23, which have ionized the electric charge of the vapor deposition particles 107, change their trajectories according to the electric field of the electrode plate 24 to which a voltage is applied, and are vapor-deposited on the electrode plate 24 to prevent vapor deposition on the mirror 4. it can.

Next, FIG. 3 is a sectional view schematically showing a mirror connecting portion as a deposition preventing portion of a vacuum deposition device as a third embodiment of the deposition preventing device of the present invention. In the present embodiment, a plurality of discharge electrodes 31 and 32 are provided on mirror connection portion 1 so as to be orthogonal to the direction in which vapor deposition particles 107 fly, and discharge is constantly generated between discharge electrodes 31 to 32. Therefore, a voltage is always applied to the flying vapor deposition particles. As a result, between the discharge electrodes 31 to 32, that is,
A discharge field 33 where a potential gradient of a predetermined magnitude is constantly generated is formed at a place where 7 comes.

The vapor deposition preventing apparatus according to the present embodiment is configured as described above, and when the vapor deposition particles 107 flowing toward the mirror 4 pass through the discharge field 33 formed between the discharge electrodes 31 and 32, the vapor deposition particles Reference numeral 107 denotes the ionized vapor-deposited particles 2 which collide with electrons or ions generated by the discharge, are ionized, and are ionized.
The trajectory 3 of the flow flowing in the direction of the mirror 4 is changed by the potential gradient of the discharge field 33 formed between the discharge electrodes 31 and 32, and is deposited on the inner wall 12 on which the discharge electrodes 31 and 32 are installed. Deposition can be prevented.

Next, FIG. 4 is a sectional view schematically showing a mirror connecting portion as a vapor deposition preventing portion of a vacuum vapor deposition device as a fourth embodiment of the vapor deposition preventing device of the present invention. In the present embodiment, the vapor deposition particles 10 flowing toward the mirror 4
When the laser beam 42 is irradiated on the mirror 7, the deposited particles 107 are naturally ionized by the electromagnetic field of the laser beam 42. The so-called laser breakdown is used to prevent deposition on the mirror 4. It is. For this reason, in the present embodiment, the laser device 41 constantly or intermittently emits the laser light 42 in a direction orthogonal to the flow of the vapor deposition particles 107 flying toward the mirror 4 on the front surface of the mirror 4 of the mirror coupling unit 1. To be irradiated.

The laser beam 42 is transmitted at an output density that does not cause a breakdown in the atmosphere, and causes ionization of the deposition particles 107 in the mirror connecting portion 1 in a vacuum. Down area 45
In order to obtain an output density sufficient to cause a breakdown, the mirror is provided to face the mirror connecting portion 101 so as to be orthogonal to the flow of the vapor deposition particles 107 flowing toward the mirror 4 in the mirror connecting portion 101. A lens 47 made of a convex or column is installed in the mirror connecting portion 101 in the air outside the optical window 46 provided on the laser device 41 side of the optical window 46 or in the vacuum inside.

An electrode plate 43 is provided on the front surface of the mirror 4 of the mirror connecting portion 1 so that a positive or negative voltage is applied. A beam damper 44 is provided in the atmosphere outside the optical window 46 provided on the side facing the laser device 41 so as to receive the laser light 42 emitted for ionizing the deposition particles 107. The beam damper 44 includes a cooling unit for cooling heat generated by the laser light 42.

Since the vapor deposition preventing apparatus of the present embodiment is configured as described above, in the laser breakdown region 45 in vacuum, the laser transmitted at an output density that does not cause breakdown in air. Light 42 is lens 4
7, and in the breakdown area 45,
The laser output density is sufficient to cause breakdown to cause ionization of 07.

When the vapor deposition particles 107 flying toward the mirror 4 pass through the breakdown area 45, the vapor density of the vapor deposition particles 1 is increased by the electromagnetic field of the laser beam 42 whose output density is increased.
07 causes breakdown and ionization. The ionized vapor deposition particles 23 change the trajectory of the flow flowing toward the mirror 4 by the electric field of the electrode plate 43 to which a voltage is applied, and are vapor-deposited on the electrode plate 43, so that vapor deposition on the mirror can be prevented.

Next, FIG. 5 is a sectional view schematically showing a mirror connecting portion as a deposition preventing portion of a vacuum deposition device as a fifth embodiment of the deposition preventing device of the present invention. In the present embodiment, deposited particles 107 flowing toward mirror 4
Then, by irradiating the laser beam 52 with the wavelength of the light that the vapor deposition particles 107 resonantly absorb, the vapor deposition particles 107 are prevented from vapor deposition by utilizing the ionization of the vapor deposition particles 107. .

Therefore, in the present embodiment, the fourth embodiment
An optical window 46 similar to that of the embodiment is provided to face the mirror connecting portion 1, and the laser device 51 is placed in the atmosphere outside one of the optical windows 46.
And a laser beam 52 adjusted to the resonance absorption wavelength of the vapor deposition particles 107 in a direction orthogonal to the flow of the vapor deposition particles 107 flowing toward the mirror 4 on the front surface of the mirror 4 of the mirror connecting portion 1.
Is constantly or intermittently irradiated.

Further, an electrode plate 53 is provided inside the mirror connecting portion 1 on the front surface of the mirror 4 so as to apply a positive or negative voltage. A beam damper 54 is provided outside the other optical window 46 on the side opposite to the laser device 51, and the laser beam emitted from the laser device 51 and applied to the vapor deposition particles 107 flowing toward the mirror 4 to ionize the vapor deposition particles 107. 52. As in the fourth embodiment, the beam damper 54 is provided with cooling means for cooling heat generated by the laser beam 52.

Since the vapor deposition preventing apparatus of the present embodiment is configured as described above, when the flow of vapor deposition particles 107 flowing orthogonally through the laser beam irradiating section 55 indicated by the hatched portion in the figure passes, The deposited particles 107 are ionized by resonance absorption. The ionized vapor deposition particles 23 are deposited on the electrode plate 53 by changing the trajectory of the flow flowing toward the mirror 4 by the electric field of the electrode plate 53 to which the voltage is applied, and the vapor deposition on the mirror 4 can be prevented.

[0061]

As described above, the vapor deposition preventing apparatus according to the present invention comprises an observation window provided in a vacuum vapor deposition apparatus, a transmission window through which a measurement laser beam is transmitted, or an optical window including a mirror which deflects the laser beam. Vacuum container in which vapor deposition particles are deposited on the upper surface and a vapor deposition plate for vacuum vapor deposition of vapor deposition particles generated by melting semiconductors and the like in a crucible placed below is installed to prevent a decrease in optical transmittance including reflectance. And an optical window, and is disposed orthogonally to the vapor deposition particles that fly to the optical window facing the vapor deposition prevention section, which discharges vapor deposition particles that are not vapor deposited on the vapor deposition plate to the outside. Gas ejecting means for ejecting a low-temperature gas toward the flying vapor deposition particles,
A low-temperature gas ejected toward the vapor deposition particles flying in the vapor deposition prevention section is discharged from the vapor deposition prevention section to the outside, and a gas suction means for maintaining the degree of vacuum in the vacuum vessel at a predetermined vacuum is provided.

According to this structure, the vapor deposition particles flowing out without being vapor-deposited on the vapor deposition plate provided in the vacuum vessel are pushed to the suction port side of the turbo molecular pump by the low-temperature gas from the gas jetting means, and the turbo molecular pump is discharged. And the like, and the vapor-deposited particles are cooled by the low-temperature gas to have a higher specific gravity, the vapor-deposited particles can be effectively discharged together with the low-temperature gas, and the amount of the vapor-deposited particles deposited on the optical window. Can be reduced.

As a result, the operation time of the vacuum vapor deposition apparatus can be extended, the number of times of evacuation in the vacuum vessel which is prolonged for the re-operation can be reduced, and the vapor deposition on the optical window required for the re-operation can be performed. The maintenance time of vacuum deposition equipment such as particle removal can be shortened.Furthermore, the flow rate of low-temperature gas ejected into vapor deposition particles and the flow rate of low-temperature gas containing vapor deposition particles discharged to the outside are balanced, and the vacuum inside the vacuum vessel is reduced. The degree can be maintained at a suitable vacuum. Therefore, the operation efficiency of forming a thin film by depositing deposition particles on a deposition plate is improved, and a vacuum deposition apparatus capable of forming an inexpensive thin film can be provided.

Further, the vapor deposition preventing apparatus of the present invention is characterized in that vapor deposition particles are vapor deposited on an optical window, and to prevent a decrease in optical transmittance, a vapor generated by melting a semiconductor or the like in a crucible provided below. A vapor deposition prevention unit that communicates between a vacuum container and an optical window that vacuum-deposits particles on a vapor deposition plate installed above, and is disposed perpendicular to vapor deposition particles scattered on an optical window facing the vapor deposition prevention unit, and vapor deposition is performed. Electron waves consisting of electrons, arcs, laser light, etc., are radiated toward vapor-deposited particles flying in the prevention section, and the charge held by the vapor-deposited particles is separated by collision with the vapor-deposited particles, thereby reducing vapor deposition on the optical window. A means for generating ionized vapor deposition particles into particles was provided.

Thus, according to the vapor deposition preventing apparatus of the present invention, the vapor deposition particles scattered in the vacuum vessel without vapor deposition on the vapor deposition plate provided in the vacuum vessel are ionized vapor deposition particles which do not easily deposit on the optical window and have no electric charge. , And the amount of vapor-deposited particles sucked into the optical window and vapor-deposited can be reduced. In addition, since the fluid or the like does not flow into the deposition prevention unit for separating the electric charges held by the deposition particles into the deposition particles scattered in the vacuum vessel,
Without vacuuming during the operation time of the vacuum evaporation apparatus, the inside of the vacuum vessel can be maintained at a suitable degree of vacuum, the operation time of the vacuum evaporation apparatus can be lengthened, and the inside of the vacuum vessel required for re-operation The number of times of evacuation can be reduced, the maintenance time of vacuum evaporation equipment such as removal of evaporation particles deposited on the optical window can be shortened, and the efficiency of thin film formation work can be improved by depositing evaporation particles on evaporation plates to form thin films. Thus, a vacuum deposition apparatus capable of forming an inexpensive thin film can be obtained.

Further, in the vapor deposition preventing apparatus of the present invention, the ionizing vapor deposition particle generating means is provided on one side surface of the vapor deposition preventing section formed in a cylindrical shape, and irradiates the vapor deposition particles to separate the charges held by the vapor deposition particles. An electron gun that outputs an electron beam into ionized vapor-deposited particles, and an electron beam damper that is provided on the other side of the deposition prevention unit facing one side on which the electron gun is disposed and receives the electron beam output from the electron gun. It was taken.

Thus, when the vapor deposition particles scattered in the vapor deposition prevention unit pass through the electron beam irradiation unit, the vapor deposition particles of the present invention collide with the electron beam and release the retained electric charge, thereby forming ionized vapor deposition particles. Thus, the deposition of the deposition particles on the optical window can be reduced.

Further, in the vapor deposition preventing apparatus of the present invention, the ionized vapor deposition particle generating means is arranged such that the electrodes are arranged to face each other, and a voltage is applied from the electrodes to the scattered vapor deposition particles to generate an arc in the vapor deposition particles. The electrode was provided in the deposition prevention part.

Thus, according to the present invention, the vapor deposition particles scattered in the vapor deposition prevention section collide with the arc when the vapor deposition particles pass through the arc, and discharge the electric charge held by the vapor deposition particles. And the deposition of deposited particles on the optical window can be reduced.

Further, in the vapor deposition preventing apparatus of the present invention, the ionized vapor deposition particle generating means is provided on one side of the vapor deposition preventing section and irradiates the laser beam to the scattered vapor deposition particles. And a beam damper for receiving the laser beam.

Thus, in the deposition preventing apparatus of the present invention, when the vapor deposition particles scattered in the vapor deposition prevention portion pass through the laser beam, they collide with the laser beam and release the retained electric charges to become ionized vapor deposition particles. In addition, deposition of deposition particles on the optical window can be reduced.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view schematically showing a mirror connecting portion as a deposition prevention portion of a vacuum deposition device as a first embodiment of a deposition prevention device of the present invention;

FIG. 2 is a cross-sectional view schematically showing a mirror connecting portion as a vapor deposition preventing portion of a vacuum vapor deposition device as a second embodiment of the vapor deposition preventing device of the present invention;

FIG. 3 is a cross-sectional view schematically showing a mirror connecting portion as a vapor deposition preventing portion of a vacuum vapor deposition device as a third embodiment of the vapor deposition preventing device of the present invention;

FIG. 4 is a cross-sectional view schematically showing a mirror connecting portion as a deposition preventing portion of a vacuum deposition device as a fourth embodiment of the deposition preventing device of the present invention;

FIG. 5 is a cross-sectional view schematically showing a mirror connecting portion as a deposition preventing portion of a vacuum deposition device as a fifth embodiment of the deposition preventing device of the present invention;

FIG. 6 is a cross-sectional view schematically showing a vapor deposition preventing device of a conventional vacuum vapor deposition device including a laser device for measuring vapor density.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Mirror connection part 2 Collection vapor deposition particle 3 Low temperature gas 4 Mirror 5 Gas ejection means 6 Buffer tank 7 Gas supply source 8 Flow control valve 9 Supersonic nozzle 10 Low temperature gas ejection part 11 Gas suction means 12 Inner wall 13 Gate valve 14 Turbo molecule Pump (TMP) 15 Rotary pump 21 Electron gun 22 Electron beam 23 Ionized particles 24 Electrode plate 25 Electron beam damper 26 Electron beam irradiation field 31, 32 Discharge electrode 33 Discharge field 41 Laser device 42 Laser beam 43 Electrode plate 44 Beam damper 45 Breakdown Area 46 Optical window 47 Lens 51 Laser device 52 Laser light 53 Electrode plate 54 Beam damper 55 Laser irradiation part 101 Vacuum container 102 Crucible 103 Specimen 104 Deposition plate 105 Vapor (deposition particles) 106 Laser device 107 Deposition particles 108 Laser light 109 Connecting part 110 Mirror 111 Vapor enclosure 112, 113 Optical window 114 Transmitted light intensity measuring device 115 Observation window A Electron gun B Electron beam

Claims (5)

[Claims] An evaporation prevention apparatus for preventing evaporation particles from evaporating on an optical window provided in a vacuum evaporation apparatus and lowering an optical transmittance. A deposition prevention unit provided between a container and the optical window, and a low-temperature gas is supplied into the deposition prevention unit in a direction orthogonal to the direction of flow of deposition particles flowing from the vacuum container toward the optical window. A vapor deposition preventing apparatus, comprising: gas blowing means for discharging gas; and gas suction means for discharging the low-temperature gas from the inside of the vapor deposition preventing section to the outside to maintain the degree of vacuum in the vacuum vessel. 2. A vacuum vessel for performing vacuum vapor deposition on a vapor deposition plate provided in a vapor deposition preventing apparatus for preventing vapor deposition particles from vapor depositing on an optical window provided in a vacuum vapor deposition apparatus and preventing a decrease in optical transmittance. And a deposition prevention unit provided between the optical window, and disposed opposite to a direction orthogonal to the direction of the flow of the deposition particles scattered from the vacuum vessel toward the optical window, the deposition prevention unit An ion deposition particle generating means for ionizing the scattered vapor deposition particles into ionized vapor deposition particles for reducing the vapor deposition on the optical window. 3. An electron gun for irradiating the vapor deposition particles with an electron beam, wherein the ionized vapor deposition particle generating means is provided on one side of the vapor deposition prevention unit, and the other side of the vapor deposition prevention unit facing the electron gun. 3. An apparatus according to claim 2, further comprising an electron beam damper for receiving the electron beam irradiated to the vapor deposition particles. 4. The method according to claim 1, wherein the ionized vapor deposition particle generating means is a discharge electrode that is disposed to face the vapor deposition prevention unit and applies a voltage to the vapor deposition particles to generate an arc in the vapor deposition particles. 3. The deposition preventing device according to claim 2, wherein 5. A laser device provided on one side of the vapor deposition preventing section and configured to irradiate a laser beam to the vapor deposition particles, and the ionizing vapor deposition particle generating means is provided on one side of the vapor deposition preventing section opposite to the laser apparatus. 3. The deposition preventing device according to claim 2, further comprising a beam damper provided to receive the laser beam irradiated to the deposition particles.