JP2002340688A - Wavelength measuring device and wavelength measuring method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a wavelength measuring device and wavelength measuring method capable of performing a precise wavelength measurement with a small- sized, lightweight and inexpensive device. SOLUTION: This wavelength measuring device has a device having photoelectric converter layers A and B of two layers differed in wavelength sensitive characteristic provided on a base plate 3, ammeters 8 and 10 for measuring photoelectrically converted current in each photoelectric converter layer A, B, and an arithmetic means for performing an operation to determine the wavelength on the basis of the current values outputted from the ammeters 8 and 10. In the wavelength measuring method using this device, the wavelength of a light of measuring object is determined by receiving the light of measuring object by the device, measuring the photoelectrically converted current at least in two positions of the optical path of the incident light, introducing the current values outputted from the two positions to an arithmetic equation based on division, and unitarily conforming the resulting calculated value to the wavelength.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a wavelength measuring device and a wavelength measuring method for measuring the wavelength of light.

[0002]

2. Description of the Related Art Conventionally, a measurement system including components such as a diffraction grating and an interferometer has been used for measuring the wavelength of light.

[0003]

The components such as the diffraction grating and the interferometer that constitute the conventional light wavelength measuring system are large in size, and these components require precise position control, and as a result, The equipment was very expensive.

An object of the present invention is to realize a wavelength measuring apparatus and a wavelength measuring method which are small in size, light in weight, inexpensive, and can perform wavelength measurement with high accuracy.

[0005]

Means for Solving the Problems In order to achieve the above-mentioned object, the present invention has a configuration as described in the claims. In other words, in the invention of the wavelength measuring device according to the first aspect, a device that performs photoelectric conversion with different wavelength sensitivity characteristics at least at two places on an optical path of light incident on a photoelectric conversion layered structure provided on a substrate, It is characterized by comprising measuring means for measuring the photoelectric conversion current at at least two places, and calculating means for performing a calculation for determining the wavelength based on the current value output from the measuring means.

According to a second aspect of the present invention, a wurtzite semiconductor layer is used in the photoelectric conversion body laminated structure.

Further, in the invention of the wavelength measuring device according to the third aspect, an In _x Ga ₁ -xN (0 ≦ x ≦ 1) mixed crystal semiconductor having a different composition x from each other is provided in the photoelectric conversion body laminated structure. It is characterized by using.

Further, in the invention of the wavelength measuring device according to the present invention, an Al _x Ga ₁ -xN (0 ≦ x ≦ 1) mixed crystal semiconductor having a different composition x from each other is provided in the photoelectric converter laminated structure. It is characterized by using.

Further, in the invention of the wavelength measuring apparatus according to the fifth aspect, an optical filter is provided on the light receiving side of the photoelectric conversion body laminated structure.

Further, in the invention of the wavelength measuring device according to claim 6, means for changing the temperature of the photoelectric conversion body laminated structure is provided, and the temperature of the photoelectric conversion body laminated structure is changed by the means. The wavelength sensitivity range of the photoelectric conversion layer is changed to make the wavelength evaluation range variable.

Further, in the invention of the wavelength measuring device according to the present invention, a means for applying pressure to the photoelectric conversion body laminated structure is provided, and the pressure is applied to the photoelectric conversion body laminated structure by the means, whereby The wavelength sensitivity characteristic of the photoelectric conversion body laminated structure is changed to make the wavelength evaluation range variable.

Further, in the invention of the wavelength measuring apparatus according to the present invention, the difference in the center wavelength of the forbidden band energy region of the photoelectric converter laminated structure is equal to or larger than the wavelength region width of the light to be measured. The photoelectric conversion body laminated structure is constituted by a body material.

According to a ninth aspect of the present invention, there is provided a device for performing photoelectric conversion having different wavelength sensitivity characteristics at least at two places in an optical path of light incident on a photoelectric conversion body laminated structure provided on a substrate. Using the device to receive the light to be measured, measuring the photoelectric conversion current at the at least two locations, and introducing the current values output from the at least two locations into an arithmetic expression based on division. The calculated value is uniquely associated with the wavelength to determine the wavelength of the measurement target light.

In the wavelength measuring apparatus and the wavelength measuring method of the present invention, a device having a stacked structure of photoelectric converters such as semiconductor layers is applied as an optical device, and the wavelength of light is uniquely determined based on the photoelectric conversion current of the device. Can be determined, and a wavelength measuring apparatus and a wavelength measuring method can be realized in which the apparatus is small, lightweight, inexpensive, and capable of performing highly accurate wavelength measurement.

[0015]

Embodiments of the present invention will be described below in detail with reference to the drawings. In the drawings described below, those having the same functions are denoted by the same reference numerals, and the repeated description thereof will be omitted.

Embodiment 1 FIG. 2 shows the relationship between the wavelength and the output (photoelectric conversion) of a photoelectric conversion element (photoelectric converter, which will be described later with reference to FIG. 1) constituted by using the photoelectric conversion body laminated film according to the present invention. FIG. 6 is a diagram illustrating the wavelength dependence of the output of the device.

In the figure, the horizontal axis represents the wavelength, and the vertical axis represents the output of the photoelectric conversion element. The region I in the figure is on the shorter wavelength side than the light absorption edge,
This is a region where most of the input light is absorbed and the output of the photoelectric conversion element changes only slowly with respect to the wavelength of the input light. Region II is a region where the absorption sharply changes with respect to the wavelength near the absorption edge, and accordingly, the output of the photoelectric conversion element rapidly attenuates at a certain wavelength or more. Region III is
This is a wavelength region where there is almost no absorption on the long wavelength side from the absorption edge, and the output of the photoelectric conversion element is almost zero.

In many semiconductors, the absorption characteristics change remarkably in the vicinity of the forbidden band energy, and the photoelectric conversion element formed there produces an output reflecting the absorption. That is, as shown in the figure, the output of the photoelectric conversion element configured using these elements shows a large output, the change of which is monotonic and gradual on the short wavelength side I, and the output is monotonic and sharp with respect to the wavelength. Region near the decreasing bandgap energy II
And the output on the long wavelength side where the output is almost zero II
I consists of three parts. Here, attention is focused on the region II near the bandgap energy. In this area II,
If the wavelength characteristics of the photoelectric conversion element manufactured in advance are measured, the wavelength can be obtained from the output of the element as long as the input intensity of light is constant. However, in this method, it is necessary to know the input intensity of light in advance, which is insufficient for a wavelength measuring instrument. Therefore, it is desirable to form photoelectric conversion elements on a plurality of photoelectric conversion layers.

FIG. 3 is a sectional view showing a basic structure of a photoelectric conversion layer such as a semiconductor layer constituting a photoelectric conversion element according to the present invention.

FIG. 1 shows an example in which the photoelectric conversion layer has a two-layer structure. In the figure, 1 is a photoelectric conversion layer A, 2 is a photoelectric conversion layer B, and 3 is a substrate. A first photoelectric conversion layer B (2) is formed on a substrate 3, and a second photoelectric conversion layer A (1) is formed thereon. The photoelectric conversion layers A and B preferably have a laminated structure in order to receive the same part of the incident light beam.

By simultaneously measuring the outputs of the photoelectric conversion elements (described later with reference to FIG. 1) formed on each of these photoelectric conversion layers A and B, both the input intensity and the wavelength of light can be measured simultaneously. You can know.

FIGS. 4A to 4C are diagrams showing indices for evaluating the output and wavelength of the photoelectric conversion element formed with the configuration of FIG. FIG. 4A shows a photoelectric conversion layer A,
B shows the individual output of each of the photoelectric conversion elements formed using B. FIG. 4B shows that the photoelectric conversion layer A was formed on the photoelectric conversion layer B, and the photoelectric conversion elements were formed thereon. FIG. 4C shows an index of a wavelength evaluation (here, a photoelectric conversion layer formed on the photoelectric conversion layer A when the photoelectric conversion layer A is formed on the photoelectric conversion layer B). (The amount obtained by dividing the output of the element by the output of the photoelectric conversion element formed on the photoelectric conversion layer B). The horizontal axis is the wavelength.

FIG. 4A shows the wavelength characteristics of the photoelectric conversion element formed using the photoelectric conversion layers A and B of FIG. The material of the photoelectric conversion layer B has a wavelength characteristic of the photoelectric conversion element in the region II _A.
Is desirably flat or gradual.

FIG. 4B shows the relationship between the input light wavelength and the output of the photoelectric conversion element formed by laminating the materials shown in FIG. 4A as shown in FIG. The output of the photoelectric conversion element of the photoelectric conversion layer B shows a sharp attenuation even on the short wavelength side due to absorption in the photoelectric conversion element of the photoelectric conversion layer A.

Here, the output ratio R (output of A / output of B) of these two elements is an amount that monotonically decreases with respect to the wavelength as shown in FIG. 4C. In the figure, R _max , R
_min is the maximum value of the output ratio R of A and B in the region II _A ;
And the minimum value. The power ratio R is one of the simplest examples of an index for evaluating a wavelength. In the region II _A, because this wavelength is uniquely determined with respect to the amount, it is possible to determine the wavelength of the input light in the wavelength range from the amount of space II _A. The amount is measured, if a value greater than R _max or smaller than R _min, is obtained, respectively, regions I _A, and the light areas III _A is input can be determined. Here, for simplicity, although the index for determining the wavelength and the output ratio of the two elements, this index, it is an amount which uniquely determine the wavelength in the region II _A, it can be any of It is. Generally, the output of A and B
The wavelength is given by a function using the output of as an independent variable.
This function is called a wavelength evaluation function. The condition under which wavelength evaluation can be performed by this method is that a monovalent wavelength evaluation function exists in a necessary wavelength region.

For the sake of simplicity, an example in which the forbidden band width of the upper photoelectric conversion layer A is made larger than the forbidden band width of the lower photoelectric conversion layer B has been described. It is possible to bring out various functions.

FIG. 1 is a diagram showing a configuration of a wavelength measuring device according to the first embodiment of the present invention.

In the figure, 1 is a photoelectric conversion layer A, 2 is a photoelectric conversion layer B, 3 is a substrate, and 4 and 5 are photoelectric conversion layers A
A pair of ohmic junction electrodes A1, A2 provided in (1)
Reference numerals 6 and 7 denote a pair of ohmic junction electrodes B1, B2, 8, and 10 provided on the photoelectric conversion layer B (2), an ammeter, 9, 10 a DC power supply (DC power supply), and 12 an incident light.

In the first embodiment, a photoelectric conversion element (photoelectric converter) is formed in each of the two photoelectric conversion layers (light absorbing layer and light receiving layer) composed of a semiconductor layer and the like. That is, by forming photoelectric conversion layers A and B (1, 2) made of different materials on the substrate 3, and forming a pair of ohmic junction electrodes 4, 5, 6, 7 on each layer, In this example, two sets of photoconductive photoelectric conversion elements are formed. Two pairs of electrodes 4, 5, 6, 7 have ammeters 8, 1
0 and appropriate DC power supplies 9 and 11 are connected. Light of an unknown wavelength is incident on this from above, and two pairs of electrodes 4,
The currents I and I 'appearing between 5, 6, and 7 are measured. From this current value, the wavelength of the input light can be obtained by λ = f (I, I ′). However, in the above equation, λ is the wavelength of the input light, f is the wavelength evaluation function, and is required to be a monovalent function in the measurement wavelength range. The method of selecting this function is arbitrary, and the accuracy of obtaining the wavelength is determined by selecting the function form.

In the first embodiment, a photoconductive photoelectric conversion element is used, but another photoelectric conversion element using a Schottky junction or a pn junction may be used. The material of the photoelectric conversion layers A and B is determined according to the wavelength range to be measured. However, in general, designing the energy gap of the material of the photoelectric conversion layer A to be larger than the energy gap of the material of the photoelectric conversion layer B facilitates the design of the layer thickness and the like. A design in which the energy gap of the photoelectric conversion layer A is smaller than the energy gap of the photoelectric conversion layer B is also possible. However, in that case, it is necessary to suppress the light absorption of the photoelectric conversion layer A to some extent, and it is necessary to take structural measures such as reducing the thickness of the photoelectric conversion layer A.

In FIG. 1, the photoelectric conversion layer is formed of A and B
Although the number of layers is three, the number of layers may be three or more. In this case, a wider range of wavelength detection can be performed by using materials having different energy gaps for the respective photoelectric conversion layers and forming electrodes on the respective photoelectric conversion layers. further,
It is also useful to form a photoelectric conversion layer having a large band gap between different photoelectric conversion layers, thereby increasing current isolation between photoelectric conversion layers that perform photoelectric conversion and increasing detection accuracy.

As described above, the wavelength measuring device according to the first embodiment has at least two optical paths of light incident on the photoelectric conversion layered structure including the photoelectric conversion layers A and B provided on the substrate 3.
A device for performing photoelectric conversion with different wavelength sensitivity characteristics at the locations, ammeters 8 and 10 as measuring means for measuring the photoelectric conversion current at at least two locations, and an ammeter 8;
And an arithmetic unit (not shown) for performing an arithmetic operation for determining the wavelength based on the current value output from the reference numeral 10.

Further, the wavelength measuring method of the first embodiment
A device that performs photoelectric conversion with different wavelength sensitivity characteristics at least at two places on the optical path of light incident on the photoelectric converter laminate structure including the photoelectric converter layers A and B provided on the substrate 3 is used. And the photoelectric conversion current at at least two places is measured, and the calculated value obtained by introducing the current value output from the at least two places into an arithmetic expression based on division is uniquely defined as a wavelength. Is determined to determine the wavelength of the light to be measured.

In the wavelength measuring apparatus and the wavelength measuring method according to the first embodiment, a device having a photoelectric converter laminated structure composed of a semiconductor layer is applied as an optical device, and is uniquely determined based on the photoelectric conversion current of the device. It is possible to realize a wavelength measuring device and a wavelength measuring method that can determine the wavelength of light, are small in size, light in weight, inexpensive, and can perform highly accurate wavelength measurement.

Second Embodiment FIG. 5 is a diagram showing a configuration of a wavelength measuring device according to a second embodiment of the present invention.

In the second embodiment, two types of wurtzite semiconductors having different light absorption wavelength characteristics are used for each of the two photoelectric conversion layers A and B. A wurtzite semiconductor often has an absorption edge in a large energy region from green to the ultraviolet region, and is effective for wavelength measurement in this region. Also, since the wavelength measuring device according to the present invention essentially has only a light receiving device and a processing portion of an electric signal,
Although suitable for environmental resistance applications, wurtzite semiconductors have properties such as a higher melting point, hardness, and superior radiation resistance, making them useful for wavelength measurement in space and high-temperature environments. is there.

Third Embodiment FIG. 6 is a diagram showing a configuration of a wavelength measuring device according to a third embodiment of the present invention.

In the third embodiment, each of the two photoelectric conversion layers A and B has InGa with different mixed crystal compositions.
N, _{i.e., In y Ga 1-y N} , In x Ga 1-x
N is used. In the third embodiment, the upper layer In _y G
The In composition y of the a _1-y N photoelectric conversion layer A is changed to the lower In _x
The composition x of the Ga _1-xN photoelectric conversion layer B is set to be smaller than 0 (y ≦ x <1), so that the energy gap is higher than that of the upper In _y Ga _1-y N photoelectric conversion layer A. Is getting bigger. As mentioned in the first embodiment, contrary to the underlying In x _Ga 1-x _N photoelectric conversion layer design an energy gap larger of B, also effective configuration in which three or more layers of a multilayer structure .

Fourth Embodiment FIG. 7 is a diagram showing a configuration of a wavelength measuring device according to a fourth embodiment of the present invention.

In the fourth embodiment, each of the two photoelectric conversion layers A and B has A1Ga having a different mixed crystal composition.
N, _{i.e., Al y Ga 1-y N} , Al x Ga 1-x
N is used. In the fourth embodiment, the upper layer Al _y G
The Al composition y of the a _1-y N photoelectric conversion layer A is changed to the lower Al _x
It is larger than the composition x of the Ga _1-x N photoelectric conversion layer B (0 ≦ x <y ≦ 1), whereby the energy gap is larger than that of the upper A _y Ga _1-y N photoelectric conversion layer A. Is getting bigger. As mentioned in the first embodiment, contrary to the underlying Al x _Ga 1-x _N photoelectric conversion layer design an energy gap larger of B, also effective configuration in which three or more layers of a multilayer structure .

Fifth Embodiment FIG. 8 is a diagram showing a configuration of a wavelength measuring device according to a fifth embodiment of the present invention.

Reference numeral 13 denotes an optical filter.

In the fifth embodiment, the photoelectric conversion layers A and B
The optical filter 13 is formed on the photoelectric conversion body laminated structure constituted by the above, that is, on the light receiving side. The optical filter 13 includes a semiconductor similar to the photoelectric conversion layer A and the photoelectric conversion layer B, and the like.
It is possible to use a color glass filter, a metal filter, a dielectric multilayer filter, or the like. This optical filter 1
3 has the following two effects by selecting its wavelength characteristics.

As the optical filter 13, λ 1 or less in FIG.
Use a low-pass filter to attenuate the lower wavelength light.
The output when light outside the required area is input
To R _min(Refer to FIG. 4C).

The wavelength characteristics of the photoelectric conversion layers A and B are shown in FIG.
If it is not smooth as shown in (a),
The evaluable wavelength range may be narrow. in this case,
By changing the effective wavelength characteristic of the output of the photoelectric conversion element by the optical filter 13, the wavelength range that can be evaluated can be expanded.

The above case will be described in more detail.

FIGS. 9A to 9C are diagrams showing the operation principle according to the fifth embodiment of the present invention. 9 (a) shows the wavelength characteristics of the photoelectric conversion element when there is an absorption peak in the region I _A, FIG. 9 (b) shows an optical filter characteristic for canceling the wavelength characteristic, FIG. 9 (c 9) shows the output of the photoelectric conversion element when the optical filter of FIG. 9B is used for the photoelectric conversion element of FIG. 9A. The horizontal axis is the wavelength.

Depending on the type and purity of the semiconductors and the like constituting the photoelectric conversion layers A and B, the light absorption characteristics are not simple as shown in FIG. 4A, but have an absorption peak near the absorption edge. There are cases. In this case, the wavelength characteristic of the photoelectric conversion element also has a peak near the absorption edge as shown in FIG.
In a wavelength measuring device configured using such a semiconductor material, the wavelength evaluation range is from λ1 to λ2. However, at this time, by using the optical filter 13 having the light transmission characteristics shown in FIG. 9B in front of the photoelectric conversion layers A and B of the wavelength measuring device, the peak of the absorption characteristics is effectively suppressed,
It is possible to obtain absorption characteristics showing a gradual change. As a result, the output ratio R also changes monotonously as shown in FIG. 9C, and the range of the measurement wavelength can be extended from λ1 ′ to λ2.

Sixth Embodiment FIG. 10 is a diagram showing a configuration of a wavelength measuring device according to a sixth embodiment of the present invention.

Reference numeral 14 denotes a heating / cooling element.

In the sixth embodiment, the wavelength measuring apparatus of the first embodiment is such that the temperature of the photoelectric conversion layers A and B can be changed by the heating / cooling element 14. As the heating / cooling element 14, a temperature control element such as a heater or a Peltier element can be used.
For example, in general, the absorption edge of a wurtzite semiconductor shifts to a longer wavelength side as the temperature rises. Therefore, by controlling the temperature of the photoelectric conversion layers A and B using the structure as shown in FIG. 10, it is possible to control the wavelength range that can be evaluated.

As shown in FIG. 10, the temperature control may be performed by a method in which a temperature control device such as a heating / cooling element 14 is brought into contact with the device, or by irradiating the device with light ranging from infrared light to ultraviolet light. In this case, a method may be used indirectly. A specific wavelength shift amount is about 3 nm (shift to a longer wavelength side) due to a temperature change from −60 ° C. to 0 ° C., for example.

That is, in the sixth embodiment, the heating / cooling element 14 is provided as a means for changing the temperature of the photoelectric conversion layers A and B, and the heating / cooling element 14 controls the temperature of the photoelectric conversion layers A and B. Is changed to change the wavelength sensitivity characteristics of the photoelectric conversion layers A and B, thereby making the wavelength evaluation range variable.

Seventh Embodiment FIG. 11 is a diagram showing a configuration of a wavelength measuring device according to a seventh embodiment of the present invention.

Reference numeral 15 denotes a pressure application device, 15a, 15b, 1
5c is a knife edge.

In the sixth embodiment, in the wavelength measuring device of the first embodiment, a wavelength evaluation device which is capable of externally applying a tensile stress (extension stress) to the photoelectric conversion layers A and B. is there. In the sixth embodiment, two places on the surface of the device are fixed with knife edges 15a and 15b,
The configuration in which the uniaxial tensile stress is applied to the photoelectric conversion layers A and B by pressing the knife edge 15c on one portion on the back surface of the device has also been described.

The pressure applied to the photoelectric conversion layers A and B may be a uniaxial tensile stress, a uniaxial compressive stress, or a hydrostatic pressure. By applying pressure to the photoelectric conversion layers A and B, the absorption edges of the photoelectric conversion layers A and B made of a wurtzite semiconductor or the like change. For example, when a compressive stress is applied in a direction perpendicular to the c-axis, the absorption edge shifts to a shorter wavelength side. Therefore, by controlling the pressure applied to the photoelectric conversion layers A and B using the structure as shown in the figure, it is possible to control the wavelength range that can be evaluated. Specifically, for example, a wavelength shift of about 6 nm can be caused by applying a uniaxial strain of 0.4% in the c-axis direction. (C-axis direction compression → shift to longer wavelength side) That is, in the seventh embodiment, a means for applying pressure to the photoelectric conversion layers A and B, that is, a pressure applying device 15 is provided. By applying pressure to the photoelectric conversion layers A and B, the wavelength sensitivity characteristics of the photoelectric conversion layers A and B are changed, and the wavelength evaluation range is made variable.

Although the present invention has been specifically described based on the embodiments, the present invention is not limited to the above-described embodiments, and it is needless to say that various modifications can be made without departing from the gist of the present invention. It is.

[0059]

As described above, according to the present invention,
A device having a photoelectric conversion layer structure such as a semiconductor layer is applied as an optical device, and the wavelength of light can be uniquely determined based on the photoelectric conversion current of the device. In addition, it is possible to realize a wavelength measurement device and a wavelength measurement method capable of performing highly accurate wavelength measurement.

[Brief description of the drawings]

FIG. 1 is a diagram illustrating a configuration of a wavelength measurement device according to a first embodiment of the present invention.

FIG. 2 is a diagram showing a relationship between an output and a wavelength of a photoelectric conversion element formed by using a photoelectric conversion body laminated film according to the present invention.

FIG. 3 is a cross-sectional view showing a basic configuration of a photoelectric conversion layer constituting a photoelectric conversion element according to the present invention.

4 (a) to 4 (c) are diagrams showing indexes for evaluating the output and wavelength of the photoelectric conversion element of FIG. 3;

FIG. 5 is a diagram illustrating a configuration of a wavelength measurement device according to a second embodiment of the present invention.

FIG. 6 is a diagram illustrating a configuration of a wavelength measurement device according to a third embodiment of the present invention.

FIG. 7 is a diagram illustrating a configuration of a wavelength measurement device according to a fourth embodiment of the present invention.

FIG. 8 is a diagram illustrating a configuration of a wavelength measurement device according to a fifth embodiment of the present invention.

FIGS. 9A to 9C are diagrams illustrating an operation principle according to the fifth embodiment of the present invention.

FIG. 10 is a diagram illustrating a configuration of a wavelength measurement device according to a sixth embodiment of the present invention.

FIG. 11 is a diagram illustrating a configuration of a wavelength measurement device according to a seventh embodiment of the present invention.

[Explanation of symbols]

Reference numeral 1 denotes a photoelectric conversion layer A, 2 denotes a photoelectric conversion layer B, 3 denotes a substrate,
4, 5 ... ohmic junction electrodes A1, A2, 6, 7 ... ohmic junction electrodes B1, B2, 8, 10 ... ammeter, 9, 1
0: DC power supply, 12: incident light, 13: optical filter, 1
4: heating / cooling element, 15: pressure applying device, 15a, 1
5b, 15c: knife edge.

 ────────────────────────────────────────────────── ─── Continued on the front page (72) Inventor Naoki Kobayashi F-term (reference) 2G020 BA19 BA20 CD24 2G065 AA20 BA02 BB25 CA21 5F049 MA02 MA05 MA20 NA10 NB07 QA07 UA18 UA20

Claims (9)

[Claims] 1. A device for performing photoelectric conversion with different wavelength sensitivity characteristics at at least two places in an optical path of light incident on a photoelectric conversion body laminated structure provided on a substrate, and measuring the photoelectric conversion current at at least two places. A wavelength measuring apparatus comprising: means for calculating a wavelength based on a current value output from the measuring means. 2. The wavelength measuring apparatus according to claim 1, wherein a wurtzite type semiconductor layer is used for the photoelectric conversion body laminated structure. 3. The photoelectric conversion device according to claim 1, wherein said photoelectric conversion element laminated structure has a composition x
2. The wavelength measuring device according to claim 1, wherein In _x Ga _1-x N (0 ≦ x ≦ 1) mixed crystal semiconductors are used. 4. The photoelectric conversion device according to claim 1, wherein said photoelectric conversion body laminated structure has a composition x
2. The wavelength measuring apparatus according to claim 1, wherein Al _x Ga ₁ -xN (0 ≦ x ≦ 1) mixed crystal semiconductors different from each other are used. 5. The wavelength measuring apparatus according to claim 1, wherein an optical filter is provided on a light receiving side of said photoelectric conversion body laminated structure. 6. A means for changing the temperature of the photoelectric conversion layer structure, wherein the means changes the temperature of the photoelectric conversion layer structure to change the wavelength sensitivity characteristics of the photoelectric conversion layer. 2. The wavelength measuring device according to claim 1, wherein the wavelength evaluation range is variable. 7. A means for applying pressure to the photoelectric conversion element laminated structure, and by applying pressure to the photoelectric conversion element laminated structure, the wavelength sensitivity characteristic of the photoelectric conversion element laminated structure is changed. 2. The wavelength measuring apparatus according to claim 1, wherein an evaluation range is variable. 8. A photoelectric conversion material laminated structure comprising a photoelectric conversion material whose difference in center wavelength of a forbidden band energy region of the photoelectric conversion material laminated structure is equal to or greater than the wavelength region width of light to be measured. The wavelength measuring device according to claim 1, wherein: 9. A device for performing photoelectric conversion having different wavelength sensitivity characteristics at least at two places in an optical path of light incident on a photoelectric converter laminate structure provided on a substrate, causing the device to receive light to be measured, By measuring the photoelectric conversion current at at least two places, and introducing the current value output from the at least two places into an arithmetic expression based on division, the calculated value is uniquely associated with the wavelength. A wavelength measuring method comprising determining a wavelength of the light to be measured.