JP2002339062A - Tool for conductive treatment of non-conductive sample - Google Patents

Tool for conductive treatment of non-conductive sample

Info

Publication number
JP2002339062A
JP2002339062A JP2001147954A JP2001147954A JP2002339062A JP 2002339062 A JP2002339062 A JP 2002339062A JP 2001147954 A JP2001147954 A JP 2001147954A JP 2001147954 A JP2001147954 A JP 2001147954A JP 2002339062 A JP2002339062 A JP 2002339062A
Authority
JP
Japan
Prior art keywords
sample
conductive
jig
tool
height
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001147954A
Other languages
Japanese (ja)
Inventor
Haruo Tsukagoshi
晴男 塚越
Yasuko Koshu
泰子 古主
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
JFE Techno Research Corp
Original Assignee
Kawatetsu Techno Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kawatetsu Techno Research Corp filed Critical Kawatetsu Techno Research Corp
Priority to JP2001147954A priority Critical patent/JP2002339062A/en
Publication of JP2002339062A publication Critical patent/JP2002339062A/en
Pending legal-status Critical Current

Links

Abstract

PROBLEM TO BE SOLVED: To provide a tool for a conductive treatment of a non-conductive sample capable of easily changing the loading height and efficiently performing an analysis in a low-vacuum ion sputtering apparatus. SOLUTION: An outer edge of a sample loading part 12 is made in a disk-like shape having a male screw 12M, and a hole having a female screw 10F receiving the male screw 12M is provided in a tool body 10.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、非導電性試料の導
電処理用治具に係り、特に、低真空型イオンスパッタリ
ング装置に用いるのに好適な、載置高さを容易に変更で
き、分析作業の効率化を図ることが可能な、非導電性試
料の導電処理用治具に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a jig for conductive treatment of a non-conductive sample, and more particularly to a jig suitable for use in a low-vacuum type ion sputtering apparatus. The present invention relates to a jig for conductive processing of a non-conductive sample, which can improve the efficiency of work.

【0002】[0002]

【従来の技術】一般に、電子顕微鏡、例えば電子線マイ
クロアナライザで非導電性試料の観察を行う場合、非導
電性試料に入射した一次電子による電荷の蓄積(チャー
ジアップと称する)が起こり、二次電子が励起されず、
観察が不可能となる。そのため、観察に先立って、非導
電性試料の観察面に、予め、炭素や金などの導電材料を
蒸着して導電処理を行い、チャージアップを防止してい
た。
2. Description of the Related Art In general, when observing a non-conductive sample with an electron microscope, for example, an electron beam microanalyzer, electric charges are accumulated (called charge-up) by primary electrons incident on the non-conductive sample, and secondary electrons are collected. Electrons are not excited,
Observation becomes impossible. Therefore, prior to the observation, a conductive material such as carbon or gold is vapor-deposited on the observation surface of the non-conductive sample in advance to perform a conductive treatment to prevent charge-up.

【0003】前記導電処理には、イオンスパッタリング
装置が用いられることが多いが、汚染の無い適切な蒸着
状態を得るには、経験と勘に頼る作業が必要であった。
[0003] An ion sputtering apparatus is often used for the conductive treatment. However, in order to obtain an appropriate deposition state free of contamination, an operation relying on experience and intuition is required.

【0004】このような問題に対して、適切な蒸着状態
を簡便に得るべく、例えば特開2000−329662
で、治具本体に設けられ、非導電性試料が載置される試
料載置部と同一面に、ダミー試料が載置される、治具本
体に回動可能に設けられたねじにより昇降自在なダミー
試料載置部を設けることが記載されている。
[0004] In order to easily obtain an appropriate vapor deposition state for such a problem, for example, Japanese Patent Application Laid-Open No. 2000-329662.
The dummy sample is placed on the same surface as the sample mounting part where the non-conductive sample is placed on the jig body, and can be moved up and down by screws rotatably provided on the jig body. It is described that a dummy sample mounting portion is provided.

【0005】[0005]

【発明が解決しようとする課題】しかしながら、特開2
000−329662に記載されている治具は、取り扱
い方法が簡便で、安価な低真空型イオンスパッタリング
装置に用いることはできなかった。何故ならば、低真空
型イオンスパッタリング装置では、試料の高さにより蒸
着厚さが変化するため、試料下部にスペーサを入れる等
して、頻繁に試料の実質的高さ(載置高さ)を変更する
必要があり、実用に耐えなかった。例えば、蒸着厚さが
必要以上に大きいと、蒸着物により微細構造が埋没して
しまう等、観察試料の形態そのものが変化してしまい、
観察ができない。逆に蒸着厚さが薄い場合には、帯電に
より観察が実施できない。
SUMMARY OF THE INVENTION However, Japanese Patent Application Laid-Open
The jig described in 000-329662 was not easy to handle and could not be used for an inexpensive low vacuum ion sputtering apparatus. Because, in the low-vacuum type ion sputtering apparatus, the vapor deposition thickness changes depending on the height of the sample, so that the substantial height (mounting height) of the sample is frequently changed by inserting a spacer under the sample. Need to change, did not stand for practical use. For example, if the vapor deposition thickness is larger than necessary, the microstructure will be buried by the vapor deposition, and the form itself of the observation sample will change,
I can't observe. Conversely, when the vapor deposition thickness is small, observation cannot be performed due to charging.

【0006】本発明は、前記従来の問題点を解消するべ
くなされたもので、低真空型イオンスパッタリング装置
において、載置高さを容易に変更でき、分析作業の効率
化が図れる非導電性試料の導電処理用治具を提供するこ
とを課題とする。
SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned conventional problems. In a low-vacuum ion sputtering apparatus, the mounting height can be easily changed, and the efficiency of analysis work can be improved. An object of the present invention is to provide a conductive processing jig.

【0007】[0007]

【課題を解決するための手段】本発明は、治具本体と、
非導電性試料が載置される試料載置部で構成される非導
電性試料の導電処理用治具であって、前記試料載置部の
外縁部が、雄ねじとなった円盤状であり、前記治具本体
に、前記雄ねじと螺合する雌ねじが形成された孔を有す
ることにより、前記課題を解決したものである。
The present invention provides a jig body,
A conductive processing jig for a non-conductive sample, comprising a sample mounting portion on which the non-conductive sample is mounted, wherein an outer edge of the sample mounting portion has a disk shape with an external thread, The object is solved by providing the jig body with a hole in which a female screw to be screwed with the male screw is formed.

【0008】[0008]

【発明の実施の形態】以下図面を参照して、本発明の実
施形態を詳細に説明する。
Embodiments of the present invention will be described below in detail with reference to the drawings.

【0009】本発明に係る非導電性試料の導電処理用治
具の第1実施形態は、図1に示す如く、治具本体10
と、この治具本体10に設けられた、非導電性試料が載
置される試料載置部12を有している。図において、1
4は台座である。
A first embodiment of a jig for conducting a non-conductive sample according to the present invention, as shown in FIG.
And a sample mounting portion 12 provided on the jig body 10 for mounting a non-conductive sample. In the figure, 1
4 is a pedestal.

【0010】図2は、低真空型イオンスパッタリング装
置の真空チャンバ(円筒を横に倒した形態をしている)
内の治具本体10、非導電性試料8、スパッタを発生さ
せるカーボン電極24の配置を示す模式図である。図に
おいて、22は、前記カーボン電極24を含むカーボン
スパッタリング発生機構、26は、スパッタリングによ
り蒸着が起こる範囲(蒸着領域と称する)である。
FIG. 2 shows a vacuum chamber of a low-vacuum type ion sputtering apparatus (in a form in which a cylinder is turned sideways).
FIG. 2 is a schematic diagram showing the arrangement of a jig body 10, a non-conductive sample 8, and a carbon electrode 24 for generating spatter. In the drawing, reference numeral 22 denotes a carbon sputtering generating mechanism including the carbon electrode 24, and reference numeral 26 denotes a range in which vapor deposition occurs by sputtering (referred to as a vapor deposition region).

【0011】ここで、非導電性試料8は、前記蒸着領域
26の何処に配置してもよいものではなく、前記したよ
うに、非導電性試料毎に、載置部の高さを変更して、蒸
着厚さを制御する必要がある。
Here, the non-conductive sample 8 may not be disposed anywhere in the deposition region 26. As described above, the height of the mounting portion is changed for each non-conductive sample. Therefore, it is necessary to control the deposition thickness.

【0012】そこで、本実施形態の試料載置部12は、
図1に示したように、外縁部が雄ねじ12Mとなった円
盤状となっており、前記治具本体10に、該雄ねじ12
Mと螺合する雌ねじ10Fが形成された孔を有してい
る。
Therefore, the sample mounting section 12 of the present embodiment is
As shown in FIG. 1, the jig body 10 has a disk shape with an outer edge portion having an external thread 12M.
It has a hole in which a female screw 10F screwed with M is formed.

【0013】このような構成とすることにより、試料載
置部12を治具本体10に対して、雄ねじとして回転す
ることができるようになる。従って、ねじの回転操作に
より、簡便に載置部12の高さを変更して、蒸着厚さを
制御することができるようになる。具体的には、例えば
図3のように、試料載置部12を指で挟み、治具本体1
0を押して、矢印のような方向に回転させる操作ができ
る。あるいは、図4に示す第2実施形態のように、回転
操作を容易とするために、試料載置部12の円盤中心付
近にドライバの先端を当てて試料載置部12を回転でき
るように、ドライバ先端を差し込む溝12Gを設けても
よい。
With such a configuration, the sample mounting portion 12 can be rotated with respect to the jig main body 10 as a male screw. Therefore, the height of the mounting portion 12 can be easily changed by rotating the screw to control the deposition thickness. More specifically, for example, as shown in FIG.
By pressing 0, an operation of rotating in the direction shown by the arrow can be performed. Alternatively, as in the second embodiment shown in FIG. 4, in order to facilitate the rotation operation, the tip of the driver is applied to the vicinity of the center of the disk of the sample mounting part 12 so that the sample mounting part 12 can be rotated. A groove 12G into which the tip of the driver is inserted may be provided.

【0014】ねじのピッチは任意に設定することができ
るが、低真空型イオンスパッタリン0グ装置では、0.
5〜3.0mmが高さの調整精度及び作業効率の観点か
ら適当である。又、治具本体10の高さも制限はない
が、10〜50mmが扱い易い。
The pitch of the screw can be set arbitrarily.
5 to 3.0 mm is appropriate from the viewpoint of height adjustment accuracy and work efficiency. Also, the height of the jig body 10 is not limited, but the height of the jig body 10 is easy to handle.

【0015】又、試料8は、様々な形態があるので、し
ばしば、試料8を水平方向に小移動したい場合がある。
従って、治具本体10を、平滑な面を有する台座14の
上に載せた構成とすると、真空チャンバ20内で水平方
向の移動が必要な際に、操作上好ましい。
Also, since the sample 8 has various forms, it is often necessary to move the sample 8 slightly in the horizontal direction.
Therefore, when the jig body 10 is placed on the pedestal 14 having a smooth surface, it is preferable in terms of operation when horizontal movement in the vacuum chamber 20 is required.

【0016】[0016]

【実施例】鋼材試料を樹脂埋め込みして鏡面研磨し、樹
脂埋め込み状態で試料高さを7.8〜14.3mmに変
化させて、12種類の高さの試料を準備した。前記の種
々の高さを持つ試料を無作為に抽出して、それぞれスパ
ッタリング操作を行い、載置部12の高さを調整するた
めの操作時間を比較した。1日あたり27〜34の試料
を、スペーサを用いた従来例と本発明を用いた実施例で
比較した。なお、台座14は共通のものを用いた。
EXAMPLE A steel sample was embedded in a resin and mirror-polished, and the height of the sample was changed from 7.8 to 14.3 mm in the resin-embedded state to prepare 12 types of samples. Samples having the various heights described above were randomly extracted, each of them was subjected to a sputtering operation, and operation times for adjusting the height of the mounting portion 12 were compared. 27 to 34 samples per day were compared between a conventional example using a spacer and an example using the present invention. The pedestal 14 used was common.

【0017】1ヶ月間のうち、20日の作業日を設けて
測定したところ、従来例では平均172秒かかったのに
対して、実施例では116秒と短い時間で操作が終了で
き、作業効率の向上を確認できた。
The operation was completed in a short period of 116 seconds in the embodiment, whereas the operation was completed in an average of 172 seconds in the conventional example. Improvement was confirmed.

【0018】[0018]

【発明の効果】本発明によれば、低真空型イオンスパッ
タリング装置において、試料の載置高さを容易に変更で
き、分析作業の効率化を図ることが可能となる。
According to the present invention, in a low vacuum ion sputtering apparatus, the mounting height of a sample can be easily changed, and the efficiency of analysis can be improved.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明に係る非導電性試料の導電処理用治具の
第1実施形態の分解斜視図
FIG. 1 is an exploded perspective view of a first embodiment of a conductive processing jig for a non-conductive sample according to the present invention.

【図2】導電処理用治具を低真空型イオンスパッタリン
グ装置の真空チャンバ内に配置した状態を示す断面図
FIG. 2 is a cross-sectional view showing a state in which a conductive processing jig is arranged in a vacuum chamber of a low vacuum ion sputtering apparatus.

【図3】第1実施形態で試料載置部の高さを調整してい
る状態を示す斜視図
FIG. 3 is a perspective view showing a state in which the height of a sample mounting part is adjusted in the first embodiment.

【図4】非導電性試料の導電処理用治具の第2実施形態
の試料載置部の形状を示す斜視図
FIG. 4 is a perspective view showing the shape of a sample mounting portion of a second embodiment of a conductive processing jig for a non-conductive sample.

【符号の説明】[Explanation of symbols]

8…非導電性試料 10…治具本体 10F…雌ねじ 12…試料載置部 12M…雄ねじ 12G…溝 14…台座 20…真空チャンバ 24…カーボン電極 26…蒸着領域 Reference Signs List 8: non-conductive sample 10: jig body 10F: female screw 12: sample mounting part 12M: male screw 12G: groove 14: pedestal 20: vacuum chamber 24: carbon electrode 26: vapor deposition area

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】治具本体と、非導電性試料が載置される試
料載置部で構成される非導電性試料の導電処理用治具で
あって、 前記試料載置部の外縁部が、雄ねじとなった円盤状であ
り、 前記治具本体が、前記雄ねじと螺合する雌ねじが形成さ
れた孔を有することを特徴とする非導電性試料の導電処
理用治具。
1. A jig for conductive treatment of a non-conductive sample comprising a jig body and a sample mounting portion on which a non-conductive sample is mounted, wherein the outer edge of the sample mounting portion is A jig for forming a non-conductive sample, wherein the jig main body has a hole formed with a female screw to be screwed with the male screw.
JP2001147954A 2001-05-17 2001-05-17 Tool for conductive treatment of non-conductive sample Pending JP2002339062A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001147954A JP2002339062A (en) 2001-05-17 2001-05-17 Tool for conductive treatment of non-conductive sample

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001147954A JP2002339062A (en) 2001-05-17 2001-05-17 Tool for conductive treatment of non-conductive sample

Publications (1)

Publication Number Publication Date
JP2002339062A true JP2002339062A (en) 2002-11-27

Family

ID=18993356

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001147954A Pending JP2002339062A (en) 2001-05-17 2001-05-17 Tool for conductive treatment of non-conductive sample

Country Status (1)

Country Link
JP (1) JP2002339062A (en)

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