JP2002335110A - Dielectric resonator device, filter, duplexer, and communications equipment - Google Patents

Abstract

PROBLEM TO BE SOLVED: To constitute a dielectric resonator device, a filter, a duplexer, and communications equipment using the device, filter, and duplexer to have superior temperature characteristics, even when different kinds of modes are multiplexed. SOLUTION: A dielectric core 3 is constituted of dielectric core portions 31, 32, and 33, and a dielectric material used for forming the core 3 is selected, so that the temperature coefficient of the core portion 32 to which TEz-mode electric fields are concentrated become positive, and the temperature coefficients of the other core portions 31 and 32 becomes negative. In this way, the temperature characteristics of the dielectric resonator device, filter, duplexer, and communications equipment are compensated with respect to TMx+y, TMx-y, and TEz modes.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

[0001] 1. Field of the Invention [0002] The present invention relates to a dielectric resonator device operating in multiple modes, a filter using the same, a duplexer, and a communication device including the same.

[0002]

2. Description of the Related Art Conventionally, a dielectric resonator having a dielectric core disposed in a cavity has been known as a TE01δ mode or a TM01δ mode.
The δ mode is used. When a dielectric resonator device using such a dielectric core forms a dielectric resonator device having a plurality of stages, a plurality of dielectric cores are arranged in a cavity.

However, in such a structure utilizing a single resonance mode generated in a single dielectric core, if the number of resonators is increased, the overall size becomes large, and a plurality of dielectric cores are positioned and fixed with high precision. Therefore, it has been difficult to manufacture a dielectric resonator device such as a dielectric filter having uniform characteristics.

Accordingly, the applicant of the present application has disclosed in
No. 45704 filed an application for a dielectric resonator device which uses a single dielectric core and increases the number of multiplexes.
The dielectric resonator device according to the above application has a resonance space of x,
When expressed in a rectangular coordinate system of y and z, TMx, TMy, and Tx in which the electric field vector is oriented in each of x, y, and z axes.
Mx mode and TEx, TEy, TE in which the electric field vector forms a loop in the plane direction perpendicular to the respective axes of x, y, and z
The z mode is created so that a maximum of six modes can be used.

[0005]

However, in the dielectric resonator device having the dielectric core disposed in the cavity as described above, the temperature characteristic is a point as a characteristic stabilizing element. That is, the characteristic of the resonance frequency with respect to temperature changes depending on the temperature characteristics of the dielectric core, the coefficient of thermal expansion (linear expansion coefficient) of the dielectric core and the cavity, and the like. Therefore, conventionally, a material having a predetermined temperature characteristic has been selected as a dielectric material of the dielectric core, and thereby temperature compensation has been performed. As another design method, a cavity in which an electrode film is applied to a ceramic having the same coefficient of thermal expansion as a dielectric core may be used, or a 42 alloy (iron and nickel (N
i) (40% to 42%).

[0006]

However, in the method of selecting a material having a predetermined temperature characteristic as a dielectric material of a dielectric core, a single mode dielectric resonator device or a multimode of TM mode, for example, is selected. Or, it is effective when the same kind of multi-mode resonance is generated as in the case of the multi-mode resonator of the TE mode. However, in the multi-mode resonator of the TE mode and the TM mode, the thermal expansion of the metal cavity is T
Since the direction (sign) differs between the effect on the E mode and the effect on the TM mode, there is a problem that temperature compensation for both modes cannot be performed at the same time.

In the method using a cavity having the same coefficient of thermal expansion as that of the dielectric core, there is no difference according to the type of the above mode. However, when the cavity is formed using a ceramic material, the dimensional accuracy is sufficiently high. However, there is a problem that it is difficult to obtain characteristics with little variation, and when an alloy such as 42 alloy is used, there is a problem that the cost increases.

SUMMARY OF THE INVENTION An object of the present invention is to provide a dielectric resonator device capable of reliably performing temperature compensation even in a multiplexed heterogeneous mode without using a special cavity.
An object of the present invention is to provide a filter, a duplexer, and a communication device using them.

[0009]

SUMMARY OF THE INVENTION According to the present invention, there is provided a dielectric resonator device in which a dielectric core is disposed in a shielding metal cavity and a multi-mode of a TM mode and a TE mode by the cavity and the dielectric core is used. In the above, the dielectric core is formed by combining dielectrics having different positive and negative signs of the temperature coefficient of the resonance frequency due to the change in the relative permittivity with the temperature change. With this structure, temperature compensation can be performed according to the mode to be used, as compared with a case where a dielectric core made of a dielectric material having a single temperature characteristic is arranged.

For example, the temperature coefficient is unevenly distributed from a positive value to a negative value from the inside of the dielectric core to the periphery. Further, for example, the temperature coefficient of the portion where the electric field of the TE mode of the dielectric core is concentrated is positive, and the temperature coefficient of the other portion of the dielectric core is negative. Thereby, temperature compensation is performed independently for the TE mode and the TM mode.

Further, the present invention provides a method of manufacturing a dielectric core from a portion where the electric field of the TE mode is concentrated to a portion where the electric field is not concentrated.
Distribute the temperature coefficient from positive to negative. Further, a dielectric material having a negative temperature coefficient is disposed in a region other than the dielectric core where the electric field of the TM mode is stronger than the electric field of the TE mode. Thereby, the temperature compensation of the TM mode is performed independently of the TE mode.

Further, the present invention multiplexes two TM modes and one TE mode by a cavity and a dielectric core to obtain a triple mode dielectric resonator device.

Further, two TM modes and three TE modes formed by the cavity and the dielectric core are multiplexed to form a five-mode dielectric resonator device.

Further, three TM modes and three TE modes by the cavity and the dielectric core are multiplexed to form a six-mode dielectric resonator device.

Further, the cavity and the dielectric core are used to
One TM mode and two TE modes are multiplexed to form a quad mode dielectric resonator device.

Further, according to the present invention, a filter or a duplexer provided with input / output means for coupling to a predetermined resonance mode is constituted by using the dielectric resonator device having the above structure.

Further, the present invention provides a communication apparatus in which a transmission signal or a reception signal is band-passed or provided as an antenna duplexer in a harmonic circuit section using the above-described dielectric resonator device, filter or duplexer. Is configured.

[0018]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The structure of a dielectric resonator device according to a first embodiment will be described with reference to FIGS. FIG. 1A is a perspective view in which the inner wall surface of the cavity is made transparent. (B) is a longitudinal sectional view at the center.

In FIG. 1, reference numeral 1 denotes an inner wall surface of a shielding metal cavity (hereinafter, simply referred to as a "cavity"). And a cavity lid made of aluminum. Reference numeral 3 denotes a quadrangular prism-shaped dielectric core including three dielectric core portions 31, 32, and 33. The dielectric core 3 is supported by the support 2 at a predetermined position in the cavity.

FIG. 2 shows the state of electric field vectors of three resonance modes used in the dielectric resonator device. (A) is a TMx + y mode in which the electric field vector is oriented in the x + y direction, and (B) is a TMx-y mode in which the electric field vector is oriented in the xy direction. (C) is xy
This is a TEz mode in which the electric field vector forms a loop on a plane and the magnetic field vector is oriented in the z-axis direction.

Thus, two TM modes and one TE
In a three-mode dielectric resonator device based on the mode, the thermal expansion due to a temperature change is larger in the metal cavity than in the dielectric core. Therefore, the temperature change causes a change in the clearance between the metal cavity and the dielectric core. . This change in clearance is caused by electric field perturbation in the TM mode and TE
The mode acts as a magnetic field perturbation. For example, when the temperature rises, the resonance frequency in the TM mode rises and the frequency in the TE mode falls. A ring-shaped (donut-shaped) dielectric core portion 32 inside the dielectric core 3 shown in FIG.
Since the z-mode electric field is concentrated, this dielectric core portion 3
The dielectric material is selected such that the temperature coefficient of 2 has a positive value and the temperature coefficients of the other dielectric core portions 31 and 33 have negative values. This compensates for the temperature characteristics of the three modes.

The design procedure is as follows. First, the temperature coefficient of the dielectric material (the change rate of the resonance frequency due to the change in the relative dielectric constant with respect to the temperature change) (hereinafter represented by τf) τf = 0
When a dielectric material of [ppm] is used, the amount of frequency fluctuation with respect to a unit temperature change is represented by Δftm [MH in the TM mode.
z / ° C.] and Δfte [MHz / ° C.] in the TE mode. The design frequency is fc [MHz].

The relative permittivity (hereinafter referred to as εr) of the dielectric core portion 32
Expressed by A) is the sensitivity coefficient for the TM mode frequency of b), and b is the sensitivity coefficient for the TM mode frequency of εr other than the dielectric core portion 32.

The sensitivity coefficient of the relative permittivity (hereinafter referred to as εr) of the dielectric core portion 32 to the frequency of the TE mode is c, and the sensitivity coefficient of the dielectric core portion 32 other than the dielectric core portion 32 to the frequency of the TE mode is d. And

The temperature coefficient of the dielectric core portion 32 required for temperature compensation is set to τf1 [ppm], and the temperature coefficient other than that of the dielectric core portion 32 is set to τf2 [ppm].

When the coefficients and variables are expressed as described above, the following simultaneous equations are established.

A × τf1 × fc + b × τf2 × fc = −Δftm c × τf1 × fc + d × τf2 × fc = −Δfte The left side of this simultaneous equation is the frequency fluctuation due to the dielectric core,
The right side corresponds to the frequency variation due to the clearance between the cavity and the dielectric core. That is, a condition under which both of these frequency fluctuation elements cancel each other is defined as a temperature compensation condition. From the simultaneous equations, required τf1 and τf2 are obtained. As described above, τf1 is a negative value and τf2 is a positive value. The above four coefficients a, b, c, and d can be easily obtained by an electromagnetic field simulator or the like.

Next, the configuration of the dielectric resonator device according to the second embodiment will be described with reference to FIG. In FIG.
(A) is the perspective view which rendered the inner wall surface of the cavity transparent. (B) is a longitudinal sectional view at the center. Unlike the dielectric resonator device shown in FIG. 1, the dielectric core portion 32 projects from the upper and lower surfaces of the dielectric core portion 31. The inside of the dielectric core portion 32 is hollow.

FIG. 4 shows the state of the electric field vectors of the five resonance modes used in the dielectric resonator device. (A) is a TMx + y mode in which the electric field vector is oriented in the x + y direction, and (B) is a TMx-y mode in which the electric field vector is oriented in the xy direction. (C) is x +
TEx + y mode in which the magnetic field vector is oriented in the y direction, (D)
Is a TEx-y mode in which the magnetic field vector is oriented in the xy directions,
(E) is a TEz mode in which the magnetic field vector is oriented in the z direction.

In this example, three TE modes (TEx + y mode, TEx-y mode,
Since the electric field of (Ez mode) is concentrated, the dielectric material is selected so that the temperature coefficient of the cylindrical dielectric core portion 32 is positive and the temperature coefficients of the other dielectric core portions 31 are negative. This compensates for the temperature characteristics of the five modes used. Since the temperature coefficient τf1 of the dielectric core portion 32 substantially equally affects the three TE modes (TEx + y mode, TEx-y mode, and TEz mode), the design procedure at this time is the same as in the first embodiment. Is the same as

FIG. 5 is a central longitudinal sectional view of the dielectric resonator device according to the third embodiment. These are shown for three examples. In (A), reference numeral 32 denotes a cylindrical dielectric core portion, and reference numeral 31 denotes another dielectric core portion, which constitutes a quadrangular prism-shaped dielectric core similar to that shown in FIG. 1 as a whole. In FIG. 5B, 32
Denotes a cylindrical dielectric core portion, which is integrally formed so as to project vertically from the center of the square pillar-shaped dielectric core portion 31 as a whole. In FIG. 5C, reference numeral 32 denotes a cylindrical dielectric core portion, which is integrated with a quadrangular prism-shaped dielectric core portion 31 having a circular hole passing through the center.

FIG. 5A is applicable to the triple mode dielectric resonator device shown in the first embodiment, and FIGS. 5B and 5C are shown in the second embodiment. It can be applied to a quintuple mode dielectric resonator device.

As a method of manufacturing a dielectric core, dielectric ceramic materials having different compositions are simultaneously molded,
A method of simultaneous firing or a method of individually molding and firing portions having different temperature coefficients and then bonding them can be adopted.

Next, the structure of a dielectric resonator device according to a fourth embodiment will be described with reference to FIGS. FIG.
(A) is a perspective view in which the inner wall surface of the cavity is made transparent. (B) is a longitudinal sectional view at the center. In FIG. 6, reference numeral 31 denotes a dielectric core portion in which a round hole is made to pass through the center of the quadrangular prism shape. Reference numeral 32 denotes a cylindrical dielectric core portion inserted into the through-hole portion. These two dielectric core portions 31 and 32 are bonded and fixed to the upper surface of the support 2, respectively. Therefore, two dielectric core portions 3
It is not necessary to directly integrate 1, 32 with each other. In this example, the dielectric core portion 32 is made of a dielectric material having a negative temperature coefficient, and the other dielectric core portions 31 are made of a dielectric material having a positive temperature coefficient.

As described above, the dielectric portion 32 having a negative temperature coefficient is disposed at the center of the dielectric core 3 where the electric field of the TE mode is not concentrated and only the electric field of the TM mode is concentrated. Compensates the temperature characteristics of the mode and the TE mode.

FIG. 7 is a diagram showing a process for compensating the temperature characteristics. (A) shows a frequency change with respect to a temperature change in the TM mode and the TE mode before adding the dielectric core portion 32 having the negative temperature coefficient. This inclination corresponds to Δftm and Δfte. (B) shows the TM mode and TE due to the provision of the dielectric core portion 32.
The frequency change with respect to the temperature change of the mode is shown. By adding the dielectric core having a negative temperature coefficient in this manner, the frequency change rate Δftm with respect to the temperature change in the TM mode is reduced, and the negative value is the same as the frequency change rate Δfte with respect to the temperature change in the TE mode. Take. Therefore, by setting the temperature coefficient of the dielectric core portion 31 other than the center portion to a predetermined positive value, the TM mode and T
Frequency change rate Δfte, Δ for temperature change in E mode
ftm is substantially 0.

Here, since the electric field vector of the TE mode is concentrated on the dielectric core portion 31, the dielectric core portion 31
Is more effective for the TE mode. for that reason,
At the stage shown in (B), the absolute value of the slope of Δfte is calculated as Δft
m, and by setting the temperature coefficient of the dielectric core portion 31 to a predetermined positive value, the frequency change rates Δfte, Δftm with respect to the temperature change in the TM mode and the TE mode.
Are set to substantially zero.

Next, the structure of a dielectric resonator device according to a fifth embodiment will be described with reference to FIG. (A) of FIG.
FIG. 3 is a perspective view showing the inner wall surface of the cavity as transparent. (B) is a longitudinal sectional view at the center. As shown in FIG. 8B, the dielectric core portion 31 has a shape in which a cylindrical portion is vertically protruded from a round hole at the center of a square pillar portion, and a cylindrical portion is formed at the center of the center through hole portion. Shaped dielectric core portion 32
Has been arranged. This dielectric resonator device is TMx + y
Mode, TMx-y mode, TEx + y mode, TEx
It utilizes five resonance modes of -y mode and TEz mode. In this example, T inside the dielectric core 3
A dielectric core portion 32 having a negative temperature coefficient is disposed in a portion where the M mode electric field is concentrated and the TE mode electric field is not concentrated. Also, the temperature coefficient τ of the dielectric core portion 31
f2 has three TE modes (TEx + y mode, TEx−
(y mode, TEz mode). Therefore, in the same manner as in the temperature characteristic compensation process shown in FIG. 7, the temperature compensation of two TM modes and three TE modes is performed simultaneously.

Next, the configuration of the dielectric resonator device according to the sixth embodiment will be described with reference to FIG. FIG. 9A
FIG. 3 is a perspective view showing the inner wall surface of the cavity as transparent. (B) is a longitudinal sectional view at the center. A dielectric block 4 having a negative temperature coefficient is arranged in a portion between the dielectric core 3 having a positive temperature coefficient and the cavity 1 where almost only an electric field of the TM mode exists. With this structure, 5
Compensates the temperature characteristics of the two modes.

As described above, by arranging the dielectric block having a negative temperature coefficient at a place where the electric field of the TM mode is stronger than the electric field of the TE mode, the temperature compensation of the TM mode is performed and the temperature of the dielectric core 3 is increased. By making the coefficient positive, the temperature characteristic of the TE mode is compensated.

FIG. 10 shows an example of a dielectric resonator device in which the shape of the dielectric block 4 is different. As described above, the dielectric block 4 is not limited to the one extending in the z-axis direction, but may extend in the x-axis direction or the y-axis direction along the inner wall surface of the cavity.

FIG. 11 is a diagram showing a configuration of a dielectric resonator device according to a seventh embodiment. Unlike the one shown in FIG. 10, the dielectric core 3 has a quadrangular prism shape. That is, the triple mode of the TMx + y mode, the TMx-y mode, and the TEz mode is used. Also in such a triple mode dielectric resonator device, by arranging a dielectric block having a negative temperature coefficient in a region other than the dielectric core where the electric field of the TM mode is stronger than the electric field of the TE mode, Temperature characteristics can be compensated for the above three modes.

FIG. 12 is a diagram showing the configuration of the dielectric resonator device according to the eighth embodiment. (A) is a perspective view showing the inner wall surface of the cavity in a transparent state, and (B) is a longitudinal sectional view at the center. In this example, a dielectric block 4 also serving as a support is provided between the dielectric core 3 and the inner surface (four surfaces) of the cavity and the dielectric core 3. In the case of such a structure, since there is no gap between the dielectric core 3 and the dielectric block 4, as shown in FIGS.
Similar temperature characteristic compensation can be performed even when the dielectric block 4 is made smaller than when a gap exists between the dielectric block 4 and the dielectric block 4.

Next, the structure of the dielectric resonator device according to the ninth embodiment will be described with reference to FIG. FIG. 13A is a perspective view showing the inner wall surface of the cavity as transparent. (B) is a longitudinal sectional view at the center. In this example,
A substantially cubic dielectric core 3 having a positive temperature coefficient is used, and a dielectric block 4 having a negative temperature coefficient is disposed on the inner wall surface of the cavity facing each surface of the dielectric core. With this structure, the temperature characteristics of the six modes are compensated.

FIG. 14 shows the state of the electric field vector in each of the above six modes. (A) is a TMx mode in which the electric field vector is oriented in the x direction, (B) is a TMy mode in which the electric field vector is oriented in the y direction, and (C) is a TMz mode in which the electric field vector is oriented in the z direction. (D) is a TEy mode in which the magnetic field vector is oriented in the y direction, (E) is a TEx mode in which the magnetic field vector is oriented in the x direction, and (F) is a TEz mode in which the magnetic field vector is oriented in the z direction.

As shown in FIG. 14, since the electric fields of the three TE modes are all concentrated on the dielectric core, the temperature coefficient of the dielectric core is made positive and the temperature coefficients of the other dielectric blocks are made negative. I do. The design procedure at this time is the same as that of the first embodiment.

The TMx + y mode shown in FIG.
The TMx mode may be added to the TMx-y mode, the TEx + y mode, the TEx-y mode, and the TEz mode to provide a six-layer mode.

Further, among the modes described above, two TM modes and two TE modes may be combined to form a quadruple mode dielectric resonator device. For example,
Of the five-fold mode shown in FIG.
A four-mode dielectric resonator may be formed by utilizing one mode.

Next, the structure of a dielectric resonator device according to the tenth embodiment is shown in FIG. In the first embodiment, as shown in FIG. 1, the dielectric core is configured by arranging a dielectric core portion having a positive temperature coefficient and a dielectric core portion having a negative temperature coefficient. In the example shown in FIG. 15, the dielectric material has a temperature coefficient gradient. That is, the dielectric core 3 has a square pole shape having a round hole in the center,
The gradient is set such that the closer to the inner surface of the round hole (the closer to the center), the greater the positive value of the temperature coefficient, and the closer to the periphery, the more negative the temperature coefficient and the greater the absolute value. .

Even when such a dielectric core is used, the electric field of the TE mode can be concentrated in the region where the temperature coefficient is positive, and the combined temperature coefficient at the location where the electric field of the TM mode passes can be made negative. Temperature compensation can be performed.

Next, an example of a dielectric filter will be described as an eleventh embodiment with reference to FIG. In FIG. 16, Ra is a dielectric resonator device similar to that shown in FIG. 11, and Rb is a dielectric resonator device similar to that shown in FIG. In FIG. 16, 6aa, 6ab, 6ba,
6bb is a probe, and 7a and 7b are coaxial connectors.

In the dielectric resonator device Ra, the probe 6aa is electrically coupled to the TMx + y mode,
b is electric field coupled to the TMx-y mode. In the dielectric resonator device Rb, the probe 6ba is electrically coupled to the TMx + y mode, and the probe 6bb is electrically coupled to the TMx-y mode.

The dielectric resonator device Ra is coupled in the order of TMx + y mode → TEz mode → TMx−y mode, and
Construct a stage resonator. Further, the dielectric resonator device Rb
Sets the TMx + y mode and the TMx-y mode as the input / output mode, during which the TEx + y mode, the TEz mode,
A five-stage resonator is formed by coupling three modes of the TEx-y mode. Therefore, it functions as a dielectric filter formed by coupling resonators of eight stages as a whole.

Next, a configuration example of a duplexer is shown in FIG. 17 as a twelfth embodiment. Here, the transmission filter and the reception filter are band-pass filters having the configuration of the dielectric filter. The transmission filter passes the frequency of the transmission signal, and the reception filter passes the frequency of the reception signal. The connection position between the output port of the transmission filter and the input port of the reception filter is such that the electrical length from the connection point to the equivalent short-circuit surface of the resonator at the last stage of the transmission filter is 1 at the wavelength of the frequency of the reception signal. The relationship that the electric length from the connection point to the equivalent short-circuit plane of the first-stage resonator of the receiving filter is an odd multiple of 1/4 wavelength at the wavelength of the transmission signal. And As a result, the transmission signal and the reception signal are surely branched.

As described above, by providing a plurality of dielectric filters between a port commonly used and an individual port, a diplexer or a multiplexer can be similarly configured.

FIG. 18 is a block diagram showing the configuration of the communication device according to the thirteenth embodiment. As described above, the transmission circuit is connected to the input port of the transmission filter, the reception circuit is connected to the output port of the reception filter, and the antenna is connected to the input / output port of the duplexer having the above configuration.
It constitutes the high frequency part of the communication device.

In addition, the circuit elements such as the diplexer, the multiplexer, the combiner, and the distributor are constituted by a multi-mode dielectric resonator device, and the communication device is constituted by using these circuit elements, so that a compact device can be realized. Thus, a highly efficient communication device can be obtained.

[0058]

According to the present invention, a dielectric core is disposed in a cavity, and the TM is formed by the cavity and the dielectric core.
In a dielectric resonator device using a multiple mode of a mode and a TE mode, a single temperature characteristic can be obtained by combining a dielectric core with dielectrics having different temperature coefficients of positive and negative signs. Temperature compensation can be performed in accordance with the mode to be used, as compared with the case where a dielectric core made of a dielectric material is provided. In addition, since a cavity made of a normal metal such as aluminum can be used as the cavity, dimensional accuracy can be easily increased, and variation in characteristics can be suppressed.

The temperature coefficient inside the dielectric core may be unevenly distributed from a positive value to a negative value. For example, the temperature coefficient of a portion of the dielectric core where the electric field of the TE mode is concentrated may be positive or negative.
By making the temperature coefficient of the other part of the dielectric core negative, temperature compensation can be performed independently for the TE mode and the TM mode.

According to the present invention, the dielectric core has a T
The temperature coefficient is distributed from positive to negative from the portion where the E-mode electric field is concentrated to the portion where the E-mode electric field is not concentrated. By arranging a negative dielectric, temperature compensation of the TM mode can be performed independently of the TE mode.

Further, according to the present invention, it is possible to configure a filter or a duplexer in which a change in filter characteristics due to a change in environmental temperature or a change in self-heating temperature due to power injection is small.

Further, according to the present invention, it is possible to configure a communication device that maintains stable communication performance under a wide range of environmental temperatures.

[Brief description of the drawings]

FIG. 1 is a perspective view and a sectional view of a dielectric resonator device according to a first embodiment.

FIG. 2 is a diagram showing electric field vectors of three modes used in the dielectric resonator device.

FIG. 3 is a perspective view and a cross-sectional view of a dielectric resonator device according to a second embodiment.

FIG. 4 is a diagram showing electric field vectors of five modes used in the dielectric resonator device.

FIG. 5 is a sectional view of a dielectric resonator device according to a third embodiment.

FIG. 6 is a perspective view and a sectional view of a dielectric resonator device according to a fourth embodiment.

FIG. 7 is a view showing a process of temperature characteristic compensation in the dielectric resonator device.

FIG. 8 is a perspective view and a sectional view of a dielectric resonator device according to a fifth embodiment.

FIG. 9 is a perspective view and a sectional view of a dielectric resonator device according to a sixth embodiment.

FIG. 10 is another perspective view and cross-sectional view of the dielectric resonator device.

FIG. 11 is a perspective view and a sectional view of a dielectric resonator device according to a seventh embodiment.

FIG. 12 is a perspective view and a sectional view of a dielectric resonator device according to an eighth embodiment.

FIG. 13 is a perspective view and a sectional view of a ninth dielectric resonator device.

FIG. 14 is a view showing electric field vectors of six modes used in the dielectric resonator device.

FIG. 15 is a sectional view of a dielectric resonator device according to a tenth embodiment.

FIG. 16 is a diagram showing a configuration of a filter according to an eleventh embodiment.

FIG. 17 is a diagram showing a configuration of a duplexer according to a twelfth embodiment.

FIG. 18 is a diagram showing a configuration of a communication device according to a thirteenth embodiment.

[Explanation of symbols]

 1-cavity 2-support 3-dielectric core 31-33 dielectric core portion 4-dielectric block 5-coupling loop 6-probe 7-coaxial connector

 ──────────────────────────────────────────────────の Continuing from the front page (72) Inventor Atsushi Koshiga 2-26-10 Tenjin, Nagaokakyo-shi, Kyoto Inside Murata Manufacturing Co., Ltd. (72) Hiromi Wakamatsu 2-26-10 Tenjin, Nagaokakyo-shi, Kyoto Stock Company F term in Murata Manufacturing (reference) 5J006 HC03 HC12 HC13 HC14 JA01 KA01 LA17 NA01 ND00

Claims (12)

[Claims] 1. A dielectric resonator device in which a dielectric core is disposed in a shielding metal cavity and a multi-mode of a TM mode and a TE mode by the cavity and the dielectric core is used. A dielectric resonator device in which a temperature coefficient of a resonance frequency due to a change in relative permittivity according to a temperature change is combined with a dielectric material having different positive and negative signs. 2. The dielectric resonator device according to claim 1, wherein the temperature coefficient of the dielectric core is unevenly distributed from a positive value to a negative value from the inside to the peripheral portion. 3. The temperature coefficient according to claim 1, wherein the temperature coefficient of a portion of the dielectric core where the electric field of the TE mode is concentrated is positive, and the temperature coefficient of another portion of the dielectric core is negative. Dielectric resonator device. 4. The dielectric resonator device according to claim 1, wherein the temperature coefficient is distributed from positive to negative from a portion where the electric field of the TE mode of the dielectric core is concentrated to a portion where the electric field is not concentrated. 5. The dielectric material according to claim 2, wherein the dielectric having the negative temperature coefficient is arranged in a region other than the dielectric core where the electric field of the TM mode is stronger than the electric field of the TE mode. Dielectric resonator device. 6. A triple mode dielectric resonator device in which two TM modes and one TE mode by the cavity and the dielectric core are multiplexed. 7. A five-mode dielectric resonator device in which two TM modes and three TE modes formed by the cavity and the dielectric core are multiplexed. 8. A six-mode dielectric resonator device in which three TM modes and three TE modes formed by the cavity and the dielectric core are multiplexed. 9. A four-mode dielectric resonator device in which two TM modes and two TE modes formed by the cavity and the dielectric core are multiplexed. 10. A filter using the dielectric resonator according to claim 1. 11. A duplexer using the dielectric resonator according to claim 1. 12. A communication device using the dielectric resonator according to claim 1, the filter according to claim 10, or the duplexer according to claim 11.