JP2002335021A - Integrated thin film thermocouple thermoelectric conversion device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To obtain high-thermoelectric conversion efficiency and provide a low-cost integrated thin film thermocouple thermoelectric conversion device in a form that whatever the kinds of a thin film material are, films can be formed, heat is absorbed in both surfaces of a flat plate structure and heat is dissipated from both surfaces of the flat plate structure. SOLUTION: An integrated thin film thermocouple thermoelectric conversion device is constituted on a structure that thin film thermocouples 22 formed by stacking P-type and N-type thermoelectric semiconductor thin films 27 and 28 via each electrical bonding layer 29 between the films 27 and 28 on one end part of a substrate 23 and via each insulating layer 31 between the films 27 and 28 on the rest of the substrate 23 are arranged and formed on the substrate 23. Each thin film thermocouple 22 are electrically series-connected with each other through conductors 32. Projected parts 35 and 36 provided on a top plate 24 and a base plate 25, both consisting of a heat conductor, are brought into contact with the parts, on which the layers 29 are located, in the thermocouples 22 and the conductors 32 on the opposite side to the parts respectively.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thin-film thermocouple-integrated thermoelectric conversion device constituted by using a thermoelectric conversion material capable of mutually converting heat and electricity.

[0002]

2. Description of the Related Art Thermoelectric conversion devices are used as electronic coolers / heaters and thermoelectric generators. FIG. 6A shows the principle of thermoelectric generation, in which a P-type semiconductor 11 and an N-type
By bringing one end of a semiconductor pair (thermocouple) into contact with the high-temperature body 13 and contacting the other end with the low-temperature body 14 to form a circuit as shown in the figure, a current flows by the Seebeck effect, Thermal electromotive force is generated. In the figure, reference numeral 15 denotes a joining metal. The high-temperature body 13 and the low-temperature body 14 are insulated from the joining metal 15.

FIG. 6B shows a configuration of a thermoelectric conversion device which is conventionally put into practical use, and has a configuration in which a large number of thermocouples shown in FIG. 6A are arranged. These thermocouples are arranged in parallel and parallel in the direction of the temperature difference, and are electrically connected in series by the electrodes 16. In the figure,
Reference numeral 17 denotes an insulator. In the thermoelectric conversion device shown in FIG. 6B, the P-type semiconductor 11 and the N-type semiconductor 12 forming the thermocouple are formed by cutting out a polycrystalline bulk material generated mainly by sintering or the like, and have the same dimensions. After cutting out a large number of 11 and 12, the thermoelectric conversion device is completed through many steps such as assembly, electrode formation and fixing. Therefore, a conventional thermoelectric conversion device using a bulk material for a semiconductor requires many different steps, which is costly and expensive in that respect, which has been a factor preventing the spread of thermoelectric conversion devices.

On the other hand, a thermoelectric conversion device can be formed by using a thin film material instead of using a bulk material for a semiconductor. In this case, a temperature gradient is formed in the film thickness direction to arrange each region of the heat absorbing portion and the heat radiating portion on the front and back surfaces of the film, and a temperature gradient is formed in a direction in the thin film surface to absorb heat in the thin film surface. It is conceivable that the respective regions of the section and the heat radiating section are arranged. In the former case, similar to the thermoelectric conversion device using the conventional bulk material shown in FIG. 6B, a thermoelectric conversion device of a form that absorbs and radiates heat on both sides of the flat plate structure can be realized. Is only a few microns or less, heat loss easily occurs,
There is a problem that thermoelectric conversion efficiency is poor.

In order to partially solve this problem, Japanese Patent Laid-Open Publication No.
In the invention described in Japanese Patent No. 664, a device is devised to reduce the heat conduction by evacuating the gap between the thermoelectric semiconductor thin films. However, this method cannot prevent heat loss through the thermoelectric semiconductor thin film itself, so that it is difficult to obtain a highly efficient thin film thermoelectric conversion device. On the other hand, in the latter case of providing a temperature gradient in the thin film surface, a thermoelectric conversion device having a high thermoelectric conversion efficiency with a small temperature loss to the film itself, a small heat loss, and a high thermoelectric conversion efficiency can be realized in principle. However, because heat loss occurs through the substrate on which the film is formed, and because there are high-temperature parts and low-temperature parts in the same plane, absorption and absorption are performed on both sides of a flat-type structure similar to a conventional thermoelectric conversion device using bulk material.
There is a problem that a form for dissipating heat cannot be realized, and a sufficient area cannot be provided for the absorbing / dissipating portion.

Japanese Patent Laid-Open Publication No. Hei 10-303469 has proposed an invention in which a temperature gradient is formed in the surface of a thin film and a sufficient area is provided for a heat absorbing / dissipating portion. However, in the invention described in Japanese Patent Application Laid-Open No. Hei 10-303469, a technique is employed in which a thermoelectric semiconductor thin film is deposited on the surface of a projection formed of plastic or the like. There is a problem that the method cannot be applied to a thermoelectric semiconductor thin film material (for example, a semiconductor superlattice that needs to be epitaxially grown) that cannot be formed without using a special substrate such as a film temperature or film formation conditions.

More specifically, it is difficult to form a film at a high temperature by forming a film on a convex portion of a plastic. It cannot be applied to a film that does not adhere to (join) a plastic. Even if a film is formed by forming a convex portion on a semiconductor substrate or the like, the slope of the convex portion and the top
There is a disadvantage that a film of the same quality may not be produced at the bottom.

[0008]

As described above, a thermoelectric conversion device using a bulk material for a semiconductor has a problem of high cost, while a thermoelectric conversion device using a thin film material for a semiconductor has a low cost. Although it is possible to achieve the conversion, it is problematic in terms of the thermoelectric conversion efficiency when the temperature gradient is formed in the film thickness direction. On the other hand, if a temperature gradient is formed in the in-plane direction of the thin film as in the invention described in JP-A-10-303469, it is advantageous in terms of thermoelectric conversion efficiency. In this case, the film is formed on the convex portion so as to have a sufficient area, and there is a possibility that a problem may occur in the quality of the film, and there is a problem that the film cannot be formed depending on the material.

In particular, it has recently been pointed out that thermoelectric conversion materials may exhibit a high figure of merit. (1) Semiconductor superlattices (Sun, X. etal., Mat. Res. Soc. Symp. P.
roc.Vol.545, P369,1999 and Venkatasubramanian, R.eta
75, No. 8, P1104, 1999, etc.) (2) Nanowires (Demske, DLetal., Technology for producing bismuth nanowires in 10 μm thick thin film mica) M
Vol.545, P209, 1999) (3) Nano-particle film (the applicant of the present invention has filed Japanese Patent Application No. 2000-267).
However, there is a problem that the method cannot be applied to film formation (generation) of a next-generation material such as that proposed in Japanese Patent No. 328).

In view of these problems, an object of the present invention is to provide a thermoelectric conversion device with high thermoelectric conversion efficiency and low cost. An object of the present invention is to provide a thin-film thermocouple integrated thermoelectric conversion device that absorbs and radiates heat on both sides of the structure.

[0011]

According to the first aspect of the present invention, a substrate and a P-type thermoelectric semiconductor thin film and an N-type thermoelectric semiconductor thin film arranged and formed on the substrate form an electrical bonding layer at one end. A plurality of thin-film thermocouples laminated on the remaining portion with an insulating layer interposed therebetween, and a plurality of thin-film thermocouples arranged at the other end opposite to the one end of the thin-film thermocouples are electrically connected in series. And a heat conductor positioned on an array of thin-film thermocouples and having a projection formed on a surface facing the thin-film thermocouple and having a structure in contact with each thin-film thermocouple on the one end. And an upper plate.

According to a second aspect of the present invention, in the first aspect, the conductor connecting the adjacent thin film thermocouples has one end located above one thin film thermocouple and the other end located below the other thin film thermocouple. A conductor located beneath the thin-film thermocouple is embedded in the substrate such that its upper surface is substantially flush with the substrate surface. According to a third aspect of the present invention, in the second aspect of the present invention, at least a part of the lower surface of the conductor located under each thin film thermocouple is exposed to the back surface of the substrate, and the heat conductor is opposed to the back surface. A bottom plate formed of a bottom plate is provided, and a projection formed on a surface of the bottom plate facing the back surface is in contact with the conductor exposed on the back surface side.

According to the fourth aspect of the present invention, the substrate, the P-type thermoelectric semiconductor thin film and the N-type thermoelectric semiconductor thin film are arranged in a plane with the first electrical junction therebetween, and the substrate is electrically connected to the substrate. A plurality of thin film thermocouples arranged and formed in a series configuration, a second electrical junction disposed between the thin film thermocouples and electrically connecting the plurality of thin film thermocouples in series, A heat conductor which is located on an array of thermocouples and has a structure in which a protrusion formed on a surface facing the thin film thermocouple is in contact with one of the first and second electrical junctions. And an upper plate made of such a material.

According to a fifth aspect of the present invention, in the fourth aspect of the present invention, a metal is buried in the substrate corresponding to each position of the electrical joint portion where the projection of the upper plate is not in contact, and the metal has an upper surface which is the same as that of the substrate. A bottom plate made of a heat conductor is disposed opposite to the back surface, and a bottom plate of the bottom plate is opposed to the back surface. The protruding portion formed on the rear surface is brought into contact with the metal exposed on the back side. According to a sixth aspect of the present invention, in any one of the third and fifth aspects, the peripheral portion of the upper plate and the peripheral portion of the bottom plate are connected and fixed to each other via a frame.

According to a seventh aspect of the present invention, in the sixth aspect, the internal space surrounded by the upper plate, the bottom plate, and the frame is evacuated. According to an eighth aspect of the present invention, in any one of the first to seventh aspects, the P-type thermoelectric semiconductor thin film and the N-type thermoelectric semiconductor thin film have a rectangular shape and the same shape, and the plurality of thin film thermocouples are formed on the substrate. Are arranged vertically and horizontally.

[0016]

Embodiments of the present invention will be described with reference to the accompanying drawings. FIG. 1 shows an embodiment of the present invention.
Reference numeral 1 denotes a substrate 23 on which a plurality of thin film thermocouples 22 are formed, which is accommodated in an internal space surrounded by an upper plate 24, a bottom plate 25, and a frame 26. FIG. 2 shows a thin film thermocouple 22.
Is shown, and the structure of the thin film thermocouple 22 and the substrate 23 will be described first with reference to FIG.

The thin film thermocouple 22 is a P-type thermoelectric semiconductor thin film 27
And an N-type thermoelectric semiconductor thin film 28 are laminated at one end via an electrical bonding layer 29 and the rest via an insulating layer 31. In this example, the P-type thermoelectric semiconductor thin film 27 and the N-type thermoelectric The semiconductor thin film 28 has a rectangular shape and the same shape. The thin film thermocouples 22 are vertically and horizontally arranged on a substrate 23. In this example, four thin film thermocouples 22 are formed, four in each of the vertical and horizontal directions.
The electrical junction layers 29 of the thin-film thermocouples 22 in each row are aligned so as to be located on one row as shown in FIG. 2A, and the electrical junctions of the odd-numbered thin-film thermocouples 22 counted from the left in the drawing are shown. The layer 29 is located on the left side of the square, and the electrical junction layer 29 of the even-numbered thin film thermocouples 22 is located on the right side of the square.

A conductor 32 is disposed on the other end of the thin film thermocouple 22 opposite to the one on which the electrical bonding layer 29 is formed, and the 16 thin film thermocouples 22 are electrically connected in series by the conductor 32. It is connected. As shown in FIG. 2A, the conductor 32 is on the right side of the square with respect to the odd-numbered thin film thermocouples 22.
The thin-film thermocouples 22 in the even rows are positioned on the left side of the square. As shown in FIG. 2B, the conductor 32 connecting the adjacent thin-film thermocouples 22 has one end located on one of the thin-film thermocouples 22, ie, the N-type thermoelectric semiconductor thin film 28.
The other end is located below the other thin film thermocouple 22, that is, below the P-type thermoelectric semiconductor thin film 27.

Conductors 32 located below each thin film thermocouple 22
Are embedded in the substrate 23 in this example, and the upper surface thereof is substantially flush with the surface of the substrate 23. The conductor 32 extends from both ends of the sixteen thin film thermocouples 22 connected in series by the conductor 32 to the edge of the substrate 23 to form a pair of terminal portions 32a, and a lead wire is connected to these terminal portions 32a. 33 is connected, for example, by soldering. The substrate 23 has two elongated grooves 3
4 is formed from the back surface side, and at least a part of the lower surface of the conductor 32 located below each thin film thermocouple 22 is exposed to the back surface side of the substrate 23 via these grooves 34.

The thin film thermocouple 22 having the above configuration
Are formed by a film forming process using a mask, and are embedded in a P-type thermoelectric semiconductor thin film 27, an electrical bonding layer 29, an insulating layer 31, an N-type thermoelectric semiconductor thin film 28 on a substrate 23 in which a conductor 32 is embedded in advance. It is manufactured by sequentially forming the conductors 32 extending from the conductors 32 onto the N-type thermoelectric semiconductor thin film 28. Although not shown, the conductor 3 extending from the embedded conductor 32 to the N-type thermoelectric semiconductor thin film 28
In order to prevent the film from directly reaching the side surface of the P-type thermoelectric semiconductor thin film 27 when the film 2 is formed, the side surface is also protected by the insulating layer 31 in advance. If necessary, a protective layer may be further formed thereon. Note that the conductor 32 is
Can be obtained by shaving a target portion of the substrate surface by, for example, ion milling, and then evaporating the conductor 32, for example. The groove 34 is formed by embedding the conductor 32 in the substrate 23 and then hollowing out the substrate 23 by, for example, wet etching or the like.
The above film forming process is performed.

The substrate 23 is an insulating substrate, such as a glass substrate. The thin-film thermocouple 22 is formed on the plane of the substrate 23 as described above, that is, since the thin-film thermocouple 22 can be formed on a flat substrate that is most suitable for forming the thermoelectric semiconductor thin films 27 and 28, Any thin film material can be used for the semiconductor thin films 27 and 28. For example, skutterudite-based materials, semiconductor superlattices, nanowire films,
Next-generation materials such as nanoparticle films can be used. Note that a conventional thermoelectric conversion material such as bismuth tellurium can also be used.

The insulating layer 31 is made of, for example, silicon oxide or silicon nitride, and the electrical bonding layer 29 and the conductor 32 are made of, for example, gold or copper. The electric junction layer 29 is formed on the upper surface of the P-type thermoelectric semiconductor thin film 27 by forming a step portion corresponding to the electric junction layer 29 to form the P-type thermoelectric semiconductor thin film 2.
7 itself. Next, the arrangement structure of the upper plate 24 and the bottom plate 25 combined with the substrate 23 on which the thin-film thermocouples 22 are formed will be described with reference to FIG. Both the upper plate 24 and the bottom plate 25 are made of a heat conductor, and the substrate 23 is sandwiched between the upper plate 24 and the bottom plate 25.

Upper plate 2 located on the array of thin film thermocouples 22
In this example, three elongated projections 35 are formed on the surface of the thin film thermocouple 22 facing the thin film thermocouple 22, and these projections 35 form the electrical bonding layer 29 of the thin film thermocouple 22. On one end, the thin-film thermocouple 22 is in contact with the N-type thermoelectric semiconductor thin film 28.
In FIG. 1B, the two-dot chain line indicates the planar shape of the projection 35. On the other hand, the bottom plate 25 disposed on the back side of the substrate 23 has the substrate 2
2 are formed on the surface opposed to the groove 3, and these convex portions 36 are formed in the groove 3 formed in the substrate 23.
4 and are brought into contact with the conductors 32 exposed on the bottom surfaces of the grooves 34. The board surfaces of the substrate 23 and the bottom plate 25 are in contact with each other as shown in the drawing.

The upper plate 24 and the bottom plate 25 are both formed of an electrically insulating material having good thermal conductivity, and for example, alumina is used as the material. Further, a metal such as copper whose surface is in contact with the thin-film thermocouple 22 or the conductor 32 is coated with, for example, alumina to secure electrical insulation.
The upper plate 24 and the bottom plate 25 are connected and fixed to each other through a frame 26, and a substrate 23 on which thin-film thermocouples 22 are formed is sandwiched between the upper plate 24 and the bottom plate 25 to form a thin-film thermoelectric device. The thermoelectric conversion device 21 of the integrated type is completed.

The top plate 24 and the bottom plate 25 are fixed to a frame 26 made of a material such as plastic, which has a low thermal conductivity and is electrically insulating and elastic. By fixing with such an elastic material, the thermoelectric conversion device 21 having high mechanical strength against thermal deformation or the like can be configured. Further, when the upper plate 24, the bottom plate 25, and the frame 26 are bonded and fixed, for example, heat loss can be further reduced by bonding in a vacuum to make the internal space vacuum. According to the thermoelectric conversion device 21 configured as described above, both sides of the flat plate structure, that is, the upper plate 24
And the bottom plate 25 absorbs and dissipates heat, and the same structure as the thermoelectric conversion device using the conventional bulk material shown in FIG. 6B can be realized.

When used as a heat generator, for example, the upper plate 2
By supplying heat to one end of the thin-film thermocouple 22 where the electrical junction 29 is located through 4, the thermoelectric power generation becomes possible. At this time, in order to keep the temperature difference high, the bottom plate 25 may be kept at a low temperature, whereby the bottom plate 25 and the conductor 32 embedded in the substrate 23 allow the thin film thermocouple 22 to be maintained.
The other end opposite to the one end is kept at a low temperature. The thermoelectric conversion device 21 can be used as a thermoelectric generator or an electronic cooling / heating device. The outer shapes of the upper plate 24 and the bottom plate 25 are not limited to flat surfaces. The shape can be adapted to the shape of the body.

The order of lamination of the P-type thermoelectric semiconductor thin film 27 and the N-type thermoelectric semiconductor thin film 28 may be reversed from this example.
FIG. 3 shows a cross-sectional structure of a thermoelectric conversion device 37 in which the substrate 23 is thinner than the configuration shown in FIG. In this example, conductors 3
After embedding 2, a thin substrate 23 is obtained by grinding the substrate surface by, for example, polishing, and the entire conductor 32 is exposed on the back side of the substrate 23. According to this configuration,
Since the convex portion 36 provided on the bottom plate 25 contacts only a part of the surface of the conductor 32 and the substrate 23, loss of heat supplied from the bottom plate 25 through the substrate 23 is suppressed as compared with the example of FIG. The thermoelectric conversion efficiency can be further improved.

FIG. 4 shows a thermoelectric conversion device 38 in which the peripheral portion of the upper plate 24 is fixed to the substrate 23 via the frame 26, that is, the bottom plate 25 is not provided. Such a configuration can also be adopted according to use conditions or applications. In this example, the conductor 32 disposed below the thin film thermocouple 22 is embedded in the substrate 23. However, for example, a configuration in which a film is formed on the substrate 23 may be adopted.
However, in terms of the formation of the thermoelectric semiconductor thin films 27 and 28, it is preferable to bury the thermoelectric semiconductor thin films 27 and 28 to make the film formation surface flatter. FIG. 5 shows that the P-type thermoelectric semiconductor thin film 27 and the N-type thermoelectric semiconductor thin film 28 constituting the thin-film thermocouple 22 are not formed in a laminated structure, but are arranged in a plane on a substrate 23 to constitute the thin-film thermocouple 22. This is an example.

In this thermoelectric conversion device 41, a P-type thermoelectric semiconductor thin film 27 and an N-type thermoelectric semiconductor thin film 28 having the same rectangular shape are arranged with a first electrical junction 42 interposed therebetween to form a thin-film thermocouple 22. The thin film thermocouples 22 are arranged and formed on a substrate 23 so as to form an electrically serial configuration. In this example, eight thin-film thermocouples 22 are arranged, and the thin-film thermocouples 22 are connected to each other at a second electrical junction 43 so that the eight thin-film thermocouples 22 are electrically connected in series. .

The projection 35 provided on the upper plate 24 made of a heat conductor has a structure in contact with the second electrical joint 43 in this example. On the other hand, a metal 44 such as gold or copper is buried in the substrate 23 corresponding to each position of the first electrical joint portion 42 where the convex portion 35 of the upper plate 24 is not in contact. Bottom plate 25 made of heat conductor
Is brought into contact with the convex portion 36. In this example, the substrate 23
Is thinner, like the thermoelectric conversion device 37 shown in FIG.

The first electrical joint 42 and the second electrical joint 43 are both formed by depositing a thin metal film such as gold or copper. In the figure, 32a indicates a terminal portion. The structure shown in FIG. 5 also has a form in which heat is absorbed and released on both sides of the flat plate type structure.
7, 28 can be formed on the plane of the substrate 23. However, the degree of integration of the thin film thermocouple 22 is inferior to the thermoelectric conversion devices 21 and 37 described above.

[0032]

As described above, according to the present invention, like the conventional thermoelectric conversion device using the bulk material shown in FIG. Further, a thermoelectric conversion device in which a thermoelectric semiconductor is formed by a thin film material can be obtained. In addition, since a large number of thin film thermocouples can be formed collectively by the film forming process, cost reduction can be achieved in that respect as compared with a thermoelectric conversion device using a bulk material. .

Since a thermoelectric semiconductor thin film can be formed on a flat substrate and the substrate material can be appropriately selected, the thermoelectric semiconductor thin film can be formed under specific conditions such as the type and flatness of the substrate, the temperature at the time of film formation, the atmosphere gas, and the degree of vacuum. It is possible to use materials that do not provide a thermoelectric semiconductor thin film with a high figure of merit unless otherwise, that is, skutterudite-based materials, semiconductor superlattices, nanowire films, nanoparticle films, etc. Can be used as Therefore, by forming a thin film thermocouple with such a material, a thermoelectric conversion device having extremely high thermoelectric conversion efficiency can be obtained.

[Brief description of the drawings]

FIG. 1A is a sectional view showing one embodiment of the invention of claim 3;
B is a plan view of a substrate on which the thin-film thermocouples are arranged and formed.

FIG. 2 is a diagram for explaining details of a substrate on which thin-film thermocouples are arranged and formed in FIG. 1, A is a plan view, and B is a DD thereof.
Sectional view, C is its EE section.

FIG. 3 is a sectional view showing another embodiment of the invention of claim 3;

FIG. 4 is a sectional view showing one embodiment of the invention of claim 1;

FIG. 5A is a sectional view showing one embodiment of the invention of claim 5;
B is a plan view of a substrate on which the thin-film thermocouples are arranged and formed.

6A is a schematic diagram showing the principle of thermoelectric power generation, and FIG. 6B is a schematic diagram of a conventional thermoelectric conversion device using a bulk material.

Claims (8)

[Claims] 1. A substrate, and a P-type thermoelectric semiconductor thin film and an N-type thermoelectric semiconductor thin film, which are arranged and formed on the substrate, are laminated at one end via an electrical bonding layer and at the other end via an insulating layer. A plurality of thin-film thermocouples, a conductor disposed at the other end of the thin-film thermocouple opposite to the one end and electrically connecting the plurality of thin-film thermocouples in series, and an arrangement of the thin-film thermocouples And an upper plate made of a heat conductor having a structure in which a protrusion formed on the surface facing the thin film thermocouple and in contact with each thin film thermocouple on the one end is provided. Thin film thermocouple integrated thermoelectric conversion device. 2. The thin-film thermocouple integrated thermoelectric conversion device according to claim 1, wherein one end of the conductor connecting the adjacent thin-film thermocouples is located above one thin-film thermocouple, and the other end is connected to the other thin-film thermocouple. A thin-film thermocouple, which is located below the thin-film thermocouple, wherein a conductor located below the thin-film thermocouple is embedded in the substrate, and the upper surface thereof is substantially flush with the surface of the substrate. Integrated thermoelectric conversion device. 3. The thin-film thermocouple integrated thermoelectric conversion device according to claim 2, wherein at least a part of the lower surface of the conductor located under each thin-film thermocouple is exposed to the back surface of the substrate, A bottom plate made of a heat conductor is arranged facing the back surface, and a protrusion formed on a surface of the bottom plate facing the back surface is in contact with the conductor exposed on the back surface side. Thin film thermocouple integrated thermoelectric conversion device. 4. A substrate, wherein a P-type thermoelectric semiconductor thin film and an N-type thermoelectric semiconductor thin film are arranged in a plane with a first electrical junction therebetween, so as to form an electrical series configuration on the substrate. A plurality of thin film thermocouples formed in an array, a second electrical junction disposed between the thin film thermocouples and electrically connecting the plurality of thin film thermocouples in series, and an array of the thin film thermocouples The first or second projection is formed on the surface facing the thin film thermocouple.
And an upper plate made of a heat conductor and configured to contact one of the electrical junctions. 5. The thin-film thermocouple-integrated thermoelectric conversion device according to claim 4, wherein a metal is embedded in the substrate corresponding to each position of the electrical junction where the projection of the upper plate is not contacted, The metal has an upper surface substantially flush with the surface of the substrate, at least a part of the lower surface is exposed on the back surface of the substrate, and a bottom plate made of a heat conductor is arranged facing the back surface. A thin-film thermocouple-integrated thermoelectric conversion device, wherein a projection formed on a surface of the bottom plate facing the rear surface is in contact with the metal exposed on the rear surface side. 6. The thin-film thermocouple integrated thermoelectric conversion device according to claim 3, wherein a peripheral edge of the upper plate and a peripheral edge of the bottom plate are connected and fixed to each other via a frame. A thin-film thermocouple integrated thermoelectric conversion device. 7. The thin-film thermocouple integrated thermoelectric conversion device according to claim 6, wherein an internal space surrounded by the top plate, the bottom plate, and the frame is evacuated. Type thermoelectric conversion device. 8. The thin-film thermocouple integrated thermoelectric conversion device according to claim 1, wherein the P-type thermoelectric semiconductor thin film and the N-type thermoelectric semiconductor thin film have a rectangular shape and the same shape. The thin-film thermocouple integrated thermoelectric conversion device, wherein the plurality of thin-film thermocouples are arranged vertically and horizontally on the substrate.