JP2002298452A - Method of manufacturing optical information recording medium, apparatus for manufacturing the same and optical information recording medium - Google Patents

Method of manufacturing optical information recording medium, apparatus for manufacturing the same and optical information recording medium

Info

Publication number
JP2002298452A
JP2002298452A JP2001094590A JP2001094590A JP2002298452A JP 2002298452 A JP2002298452 A JP 2002298452A JP 2001094590 A JP2001094590 A JP 2001094590A JP 2001094590 A JP2001094590 A JP 2001094590A JP 2002298452 A JP2002298452 A JP 2002298452A
Authority
JP
Japan
Prior art keywords
substrate
optical information
information recording
recording medium
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001094590A
Other languages
Japanese (ja)
Inventor
Yuji Miura
裕司 三浦
Katsunari Hanaoka
克成 花岡
Masaru Magai
勝 真貝
Yasutomo Aman
康知 阿萬
Kiyoto Shibata
清人 柴田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ricoh Co Ltd
Original Assignee
Ricoh Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ricoh Co Ltd filed Critical Ricoh Co Ltd
Priority to JP2001094590A priority Critical patent/JP2002298452A/en
Publication of JP2002298452A publication Critical patent/JP2002298452A/en
Pending legal-status Critical Current

Links

Abstract

PROBLEM TO BE SOLVED: To raise a substrate temperature in deposition of a recording layer without the occurrence of substrate deformation and to eliminate the need for an initialization process or to rapidly perform the process without using recording materials. SOLUTION: In manufacturing the optical information recording medium 1, the temperature of the substrate 2 molded by a molding machine 11 is regulated to >=50 deg.C and below the deformation temperature of the substrate 2 and the substrate is fed into a deposition system 12 and is deposited with a recording layer 5, etc. The recording layer 5 is then regulated the substrate temperature in the deposition to a high temperature to the extent of preventing the occurrence of the substrate deformation and the recording layer 5 is put into a crystallized state or at least the mingled state of the crystalline state and a amorphous state right after the deposition.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】この発明は、相変化材料を用
いた光情報記録媒体の製造方法と製造装置及び光情報記
録媒体に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method and apparatus for manufacturing an optical information recording medium using a phase change material, and an optical information recording medium.

【0002】[0002]

【従来の技術】相変化型光情報記録媒体では、記録層は
スパッタリングや蒸着などの真空成膜法で成膜され、成
膜直後の記録膜は、通常、非晶質状態となっている。一
方、相変化材料を用いた光情報記録媒体では、通常、ア
モルファス状態を記録状態、結晶状態を消去状態として
記録再生を行うため、記録を行う前提として記録層をあ
らかじめ結晶状態(消去)に転換しておくことが行われ
る。これを初期化といい、大出力のレーザービームを光
情報記録媒体の記録層に逐次照射することにより結晶化
することが一般的に行われている。しかし、この方法の
場合、初期化そのものに時間がかかり生産性がよくない
という欠点がある。
2. Description of the Related Art In a phase change type optical information recording medium, a recording layer is formed by a vacuum film forming method such as sputtering or vapor deposition, and a recording film immediately after the film formation is usually in an amorphous state. On the other hand, in an optical information recording medium using a phase change material, usually, recording and reproduction are performed with an amorphous state as a recording state and a crystalline state as an erasing state. What you do is done. This is called initialization, and crystallization is generally performed by sequentially irradiating a recording layer of an optical information recording medium with a high-power laser beam. However, this method has a disadvantage that the initialization itself takes time and productivity is not good.

【0003】この欠点を回避するために、例えば特開平
5−342629号公報や特開平9−161316号公
報,特開平11−96596号公報等に示すように、記
録層の少なくとも一部分に接して結晶化補助層と結晶化
促進層を設ける方法が提案されている。この結晶化補助
層を設けた場合、初期化時間を短縮することは可能であ
るが、ほとんどの場合初期化プロセスは必ず行う必要が
ある。また,結晶化促進層を設けた場合でも記録材料に
よっては結晶化が不完全になることが実験的に確認され
ている。すなわち、結晶化促進層は記録層の成膜段階で
の結晶化の活性化エネルギーを下げ、結晶化を促進する
効果を有すると考えられるが、記録材料によってはその
効果だけでは十分でない場合がある。
In order to avoid this drawback, for example, as disclosed in JP-A-5-342629, JP-A-9-161316, JP-A-11-96596, etc., a crystal is formed in contact with at least a part of a recording layer. A method of providing a crystallization assisting layer and a crystallization promoting layer has been proposed. When the crystallization assisting layer is provided, the initialization time can be reduced, but in most cases, the initialization process must be performed. Also, it has been experimentally confirmed that even when a crystallization promoting layer is provided, crystallization is incomplete depending on the recording material. That is, the crystallization promoting layer is considered to have the effect of lowering the activation energy of crystallization at the film formation stage of the recording layer and promoting crystallization, but depending on the recording material, the effect alone may not be sufficient. .

【0004】これに対して特開平11−96596号公
報に示された光情報記録媒体は、結晶化促進層を設けた
上で結晶化促進層の成膜の直前または直後,あるいは記
録層の成膜の直前または直後に適当な基板加熱工程を加
えるようにしている。また,WO98−47142号公
報に示された光情報記録媒体の製造方法では、記録層の
成膜前に行われた成膜により発生して基板に蓄積された
熱を利用して記録層の成膜をその直前の成膜終了直後に
行うようにして、成膜余熱を利用している。これらは、
結晶化促進層の促進効果の不足分を補うために、基板を
加熱して高温にすることにより、成膜された記録層の原
子が基板上を移動し、再配列して格子を組み結晶化する
ために必要なエネルギーを基板からの熱エネルギーとし
て供給し、成膜段階での結晶化を実現しようとするもの
である。
On the other hand, the optical information recording medium disclosed in Japanese Patent Application Laid-Open No. 11-96596 is provided with a crystallization promoting layer, and immediately before or immediately after the formation of the crystallization promoting layer, or the formation of the recording layer. An appropriate substrate heating step is added immediately before or immediately after the film. Further, in the method for manufacturing an optical information recording medium disclosed in WO 98-47142, the formation of the recording layer is performed by utilizing heat generated by film formation performed before the formation of the recording layer and accumulated on the substrate. The film is formed immediately after the end of the previous film formation, and the residual heat of the film formation is used. They are,
By heating the substrate to a high temperature to compensate for the lack of the effect of the crystallization promoting layer, the atoms of the formed recording layer move on the substrate, rearrange and form a lattice to form a crystal. In this case, the energy required for the crystallization is supplied as thermal energy from the substrate to realize crystallization at the film formation stage.

【0005】[0005]

【発明が解決しようとする課題】しかしながら特開平1
1−96596号公報に示すように、結晶化促進層の成
膜の直前または直後,あるいは記録層の成膜の直前また
は直後に行うためには、成膜プロセス中の加熱が必要と
なり、装置が大がかりとならざるを得ず、製造コストの
低減という本来の目的に反する結果を招いてしまう。さ
らに、結晶化促進層の成膜の直前または直後、あるいは
記録層の成膜の直前または直後に加熱を行うため、低コ
スト化を目指した高タクト製造においては、基板温度を
結晶化に必要十分な温度にする際に急激な温度上昇を伴
い、基板変形を生じるという問題がある。
SUMMARY OF THE INVENTION However, Japanese Patent Laid-Open No.
As shown in JP-A-1-96596, heating during the film formation process is required to perform the process immediately before or immediately after the formation of the crystallization promoting layer or immediately before or immediately after the film formation of the recording layer. This must be large and results in a reduction in manufacturing cost, contrary to the original purpose. Furthermore, since heating is performed immediately before or immediately after the formation of the crystallization promoting layer or immediately before or immediately after the formation of the recording layer, in high-tact manufacturing aimed at reducing costs, the substrate temperature must be sufficient for crystallization. There is a problem in that when the temperature is adjusted to a suitable temperature, the temperature is rapidly increased and the substrate is deformed.

【0006】また、WO98−47142号公報に示す
ように、成膜余熱を利用した方法は、加熱設備を必要と
しない点で有利ではあるが、低コスト化を目指した高タ
クト製造においては基板をごく短時間で高温まで加熱す
る必要があることから基板温度の急激な上昇を伴い、そ
れがもとで基板変形が生じるという不具合がある。
Further, as shown in WO 98-47142, a method utilizing the residual heat of film formation is advantageous in that no heating equipment is required, but a substrate is not used in high-tact manufacturing aimed at cost reduction. Since it is necessary to heat the substrate to a high temperature in a very short time, there is a problem that the substrate temperature is rapidly increased and the substrate is deformed due to the rapid rise.

【0007】この発明は、このような不具合を解消し、
基板変形を起こすことなく記録層成膜時の基板温度を高
め、記録材料によらず初期化プロセスを不要あるいは短
時間で行えるようにして、光情報記録媒体の生産スルー
プットを向上させ、安価な光情報記録媒体を製造するこ
とができる光情報記録媒体の製造方法と製造装置及び光
情報記録媒体を提供することを目的とするものである。
The present invention solves such a problem,
The substrate temperature at the time of forming the recording layer is increased without causing the substrate deformation, and the initialization process is unnecessary or can be performed in a short time regardless of the recording material. An object of the present invention is to provide a method and an apparatus for manufacturing an optical information recording medium capable of manufacturing an information recording medium, and an optical information recording medium.

【0008】[0008]

【課題を解決するための手段】この発明に係る光情報記
録媒体の製造方法は、成形された基板を基板支持体で成
膜装置に搬送して投入して少なくとも第1保護層と結晶
化促進層と記録層と第2保護層及び反射層を成膜する光
情報記録媒体の製造方法において、成形した基板の温度
を50℃以上で基板の変形温度以下にして成膜装置に投
入することを特徴とする。
According to a method of manufacturing an optical information recording medium according to the present invention, a molded substrate is transported to a film forming apparatus by a substrate support and thrown in, and at least a first protective layer and a crystallization promoting medium are formed. In the method for manufacturing an optical information recording medium for forming a layer, a recording layer, a second protective layer, and a reflective layer, it is preferable that the temperature of the formed substrate is not lower than 50 ° C. and not higher than the deformation temperature of the substrate, and is then input to the film forming apparatus. Features.

【0009】上記基板を成形終了後20秒以内に成膜装
置に投入することが望ましい。この投入時間のばらつき
を2秒以内にすると良い。
It is desirable that the substrate be put into a film forming apparatus within 20 seconds after the completion of molding. It is preferable that the variation of the charging time be within 2 seconds.

【0010】また、上記基板を成膜装置へ投入する前段
階に、基板を50℃以上で基板の変形温度以下に加熱す
る加熱工程を有しても良い。
In addition, before the substrate is put into the film forming apparatus, a heating step of heating the substrate to a temperature of 50 ° C. or higher and a deformation temperature of the substrate or lower may be provided.

【0011】この発明の光情報記録媒体の製造装置は、
成形された基板を基板支持体で成膜装置に搬送して投入
して少なくとも第1保護層と結晶化促進層と記録層と第
2保護層及び反射層を成膜する光情報記録媒体の製造装
置において、成形した基板の温度を50℃以上で基板の
変形温度以下にして成膜装置に投入することを特徴とす
る。
[0011] An apparatus for manufacturing an optical information recording medium according to the present invention comprises:
Manufacture of an optical information recording medium in which the formed substrate is transported and input into a film forming apparatus with a substrate support, and at least a first protective layer, a crystallization promoting layer, a recording layer, a second protective layer, and a reflective layer are formed. The apparatus is characterized in that the temperature of the formed substrate is set to 50 ° C. or higher and equal to or lower than the deformation temperature of the substrate, and the substrate is put into a film forming apparatus.

【0012】上記基板を成形終了後20秒以内に成膜装
置に投入することが望ましい。
It is desirable that the substrate be put into a film forming apparatus within 20 seconds after the completion of molding.

【0013】また、基板を成形する成形機と成膜装置を
50℃の恒温室に配置すると良い。
The molding machine and the film forming apparatus for molding the substrate are preferably arranged in a constant temperature chamber at 50 ° C.

【0014】さらに、基板を保持して成膜装置に投入す
る基板支持体の少なくとも基板と相対する面を基板と熱
伝導率が近いか材料又は基板と熱伝導率が同じ材料にす
ると良い。また、基板をポリカーボネイト樹脂等の高分
子材料を用いた場合は、基板支持体の少なくとも基板と
相対する面の材料を、熱伝導率が0.1〜1.0(Kcal/m・hr・
℃)の範囲のものを使用することが望ましい。さらに、
基板支持体に加熱装置を設けると良い。
Further, it is preferable that at least a surface of the substrate support facing the substrate, which is put into the film forming apparatus while holding the substrate, is made of a material having a thermal conductivity close to that of the substrate or a material having the same thermal conductivity as the substrate. When the substrate is made of a polymer material such as polycarbonate resin, the material of at least the surface of the substrate support facing the substrate has a thermal conductivity of 0.1 to 1.0 (Kcal / mhr.
(° C.). further,
It is preferable to provide a heating device on the substrate support.

【0015】また、成膜装置で基板を保持する基板ホル
ダーの基板の薄膜成膜領域裏面の少なくとも一部を基板
に密着させる構造とすることが望ましい。さらに、基板
ホルダーの少なくとも基板と相対する面を基板と熱伝導
率が近いか材料又は基板と熱伝導率が同じ材料にすると
良い。また、基板をポリカーボネイト樹脂等の高分子材
料を用いた場合、基板ホルダーの少なくとも基板と相対
する面の材料を、熱伝導率が0.1〜1.0(Kcal/m・hr・℃)の
範囲のものを使用すると良い。
Further, it is preferable that at least a part of the back surface of the thin film deposition region of the substrate of the substrate holder that holds the substrate in the film deposition apparatus is in close contact with the substrate. Further, at least the surface of the substrate holder facing the substrate is preferably made of a material having a thermal conductivity close to that of the substrate or a material having the same thermal conductivity as the substrate. When the substrate is made of a polymer material such as polycarbonate resin, the material of at least the surface of the substrate holder opposed to the substrate should have a thermal conductivity in a range of 0.1 to 1.0 (Kcal / mhr- ° C). Good to use.

【0016】また、成膜装置で記録層成膜後に基板を冷
却することが望ましい。
It is desirable that the substrate is cooled after the recording layer is formed by the film forming apparatus.

【0017】この発明の光情報記録媒体は、上記光情報
記録媒体の製造装置で製造したことを特徴とする。
An optical information recording medium according to the present invention is characterized by being manufactured by the above-described optical information recording medium manufacturing apparatus.

【0018】[0018]

【発明の実施の形態】図1はこの発明の光情報記録媒体
の構成を示す断面模式図である。図に示すように、光情
報記録媒体1は、基板2と第1保護層3と結晶化促進層
4と記録層5と第2保護層6及び反射層7を有する。基
板1はポリカーボネート等により形成されている。第1
保護層3と第2保護層7はZnS・SiOからなる。
結晶化促進層4はBi原子を含んでいる。Bi原子を含
んでいる結晶化促進層4は結晶化促進効果が大きく、さ
らに記録層5を成膜時の基板温度を結晶化にとって有利
な高温に設定することにより、初期化不要となる記録材
料の組成範囲を拡大することが可能となる。
FIG. 1 is a schematic sectional view showing the structure of an optical information recording medium according to the present invention. As shown in the figure, the optical information recording medium 1 has a substrate 2, a first protective layer 3, a crystallization promoting layer 4, a recording layer 5, a second protective layer 6, and a reflective layer 7. The substrate 1 is formed of polycarbonate or the like. First
Protective layer 3 and the second protective layer 7 is made of ZnS · SiO 2.
The crystallization promoting layer 4 contains Bi atoms. The crystallization accelerating layer 4 containing Bi atoms has a large crystallization accelerating effect, and further, by setting the substrate temperature at the time of forming the recording layer 5 to a high temperature which is advantageous for crystallization, a recording material which does not need to be initialized is formed. Can be expanded.

【0019】記録層5は、空間群Fm3mに属する準安
定SbTe相を有する記録層材料が使用される。この
準安定相はSb−Te共晶構造の記録層材料とは異なっ
ており、SbとSbTeとに分離せず、結晶粒界に
起因する記録マークの乱れも生じないものであり、その
ため、空間群Fm3mに属する準安定SbTe相を有
する記録層材料を用いたものは、高密度記録が可能とな
るという長所をもっている。なお、記録特性の向上、保
存信頼性の向上など必要に応じて、準安定Sb Te相
を有する記録層材料にIb族元素、II族元素、III族元
素、IV族元素、V族元素、VI族元素、希土類元素及び遷
移金属元素から選ばれた元素の少なくとも1種が添加さ
れる。具体的にはAgInSbTe,GeSbTe,GeInSbTeなどが挙げ
られるが、これに限るものではなく、レーザー光の照射
前後でその光学特性が可逆的に変化するすなわち熱的な
作用により結晶化状態とアモルファス状態の遷移が可逆
的に変化する記録層材料であれば良い。反射層7はAl
合金からなる。
The recording layer 5 is formed of a sub-zone belonging to the space group Fm3m.
Constant Sb3A recording layer material having a Te phase is used. this
Metastable phase is different from Sb-Te eutectic recording layer material
Sb and Sb2Te3At the grain boundaries without separation
The recording marks do not disturb due to
Therefore, the metastable Sb belonging to the space group Fm3m3With Te phase
High-density recording is possible with
Has the advantage of Note that the recording characteristics can be improved and preserved.
Meta-stable Sb 3Te phase
Group Ib element, group II element, group III element
Element, group IV element, group V element, group VI element, rare earth element and transition
At least one element selected from the transfer metal elements is added
It is. Specifically, AgInSbTe, GeSbTe, GeInSbTe, etc. are listed.
But not limited to this, laser light irradiation
Its optical properties change reversibly before and after
Reversible transition between crystallized and amorphous states by action
Any material may be used as long as it is a recording layer material that changes dynamically. The reflection layer 7 is made of Al
Made of alloy.

【0020】この光情報記録媒体1を製造する製造装置
は、図2の構成図に示すように、基板2を成形する成形
機11と、第1保護層3と結晶化促進層4と記録層5と
第2保護層6及び反射層7を形成する成膜装置12を有
する。成膜装置12は、図3の構成図に示すように、基
板搬入・搬出室21と第1保護層成膜室22,23と結
晶化促進層成膜室24と記録層成膜室25と第2保護層
成膜室26,27及び反射層成膜室28が連続して配置
され、基板搬入・搬出室21と各成膜室22〜28の中
心に設けられた回転機構部29には、基板搬入・搬出室
21と各成膜室22〜28の数に応じた基板ホルダー3
0が伸縮アーム31を介して取り付けられている。
As shown in FIG. 2, a manufacturing apparatus for manufacturing the optical information recording medium 1 includes a molding machine 11 for molding a substrate 2, a first protective layer 3, a crystallization promoting layer 4, and a recording layer. 5 and a film forming apparatus 12 for forming the second protective layer 6 and the reflective layer 7. As shown in the configuration diagram of FIG. 3, the film forming apparatus 12 includes a substrate loading / unloading chamber 21, first protective layer film forming chambers 22 and 23, a crystallization promoting layer film forming chamber 24, and a recording layer film forming chamber 25. The second protective layer film forming chambers 26 and 27 and the reflective layer film forming chamber 28 are continuously arranged, and a substrate loading / unloading chamber 21 and a rotation mechanism 29 provided at the center of each of the film forming chambers 22 to 28 are provided. Substrate holders 3 corresponding to the number of substrate loading / unloading chambers 21 and each of the film forming chambers 22 to 28
0 is attached via a telescopic arm 31.

【0021】この製造装置で光情報記録媒体1を製造す
るときは、図2に示すように、成形機11で基板2を成
形し、成形した基板2を回転軸13に取り付けられた伸
縮アーム14の先端に設けられた基板支持体15で保持
して成膜装置12に搬送して投入し、成膜装置12で第
1保護層3と結晶化促進層4と記録層5と第2保護層6
及び反射層7を成膜する。この成膜装置12で成膜する
ときに、基板2の温度を50℃以上で基板2の変形温度
以下にして成膜装置12に投入する。
When the optical information recording medium 1 is manufactured by the manufacturing apparatus, the substrate 2 is formed by a forming machine 11 as shown in FIG. The substrate is held by a substrate support 15 provided at the tip of the substrate, transported to the film forming apparatus 12, and charged therein, where the first protective layer 3, the crystallization promoting layer 4, the recording layer 5, and the second protective layer 6
And the reflection layer 7 is formed. When forming a film by the film forming apparatus 12, the temperature of the substrate 2 is set to 50 ° C. or higher and equal to or lower than the deformation temperature of the substrate 2, and the film is put into the film forming apparatus 12.

【0022】このように基板2の温度を50℃以上で基
板2の変形温度以下にして成膜装置12に投入するため
に、成形機11で基板2を成形した後、一定時間例えば
20秒以内に成形した基板2を成膜装置12に投入す
る。これは射出成形に代表される基板成形法において、
成形直後の基板2の温度が100℃以上の高温にあるこ
とを利用したものであり(以下、成形余熱利用という)、
これによりごく短時間で基板2の温度を50℃以上で基
板2の変形温度以下に設定することができる。成形気1
1で成形された基板11は、保温設備等を設けない場合
は大気中への放熱により急激に温度が低下する。そこで
この基板2の温度が50℃以下に低下しないようにする
ため、基板2の成形終了後20秒以内に成膜装置12に
投入することが望ましい。また、この投入時間のばらつ
きを管理することにより、投入時間の違いによる基板ご
との温度ばらつきが生じることを防ぐ。この投入時間の
ばらつきはできるだけ少ない方が良く、望ましくは2秒
以内に管理すると良い。
In order to set the temperature of the substrate 2 at 50 ° C. or higher and at the deformation temperature of the substrate 2 and feed the substrate 2 to the film forming apparatus 12, the substrate 2 is molded by the molding machine 11. The substrate 2 molded into a film is put into the film forming apparatus 12. This is a substrate molding method represented by injection molding.
It utilizes the fact that the temperature of the substrate 2 immediately after molding is at a high temperature of 100 ° C. or higher (hereinafter, referred to as use of residual molding heat).
Accordingly, the temperature of the substrate 2 can be set to 50 ° C. or higher and the deformation temperature of the substrate 2 in a very short time. Molding air 1
If the substrate 11 molded in 1 is not provided with a heat retaining facility or the like, the temperature rapidly decreases due to heat radiation to the atmosphere. Therefore, in order to prevent the temperature of the substrate 2 from lowering to 50 ° C. or less, it is desirable that the substrate 2 be charged into the film forming apparatus 12 within 20 seconds after the completion of the molding. Further, by managing the variation in the input time, it is possible to prevent the occurrence of temperature variation for each substrate due to the difference in the input time. It is better that the variation of the charging time is as small as possible, and it is better to manage it within 2 seconds.

【0023】このように50℃以上で基板2の変形温度
以下で成膜装置12に投入された基板2は、成膜時の膜
堆積による温度上昇(以下、成膜余熱)が加わることでさ
らに高温の状態となる。このため記録材料の結晶化に必
要なエネルギーを基板2からの熱エネルギーとして供給
することができ、結晶化促進層4の促進効果だけでは記
録材料を結晶化させるのに不十分な場合でも、その不足
分の一部または全てを補うことができる。この成膜余熱
による基板2の加熱は、あくまでも補助的なもので良
く、成膜余熱による積極的な加熱、例えば第1保護層3
の膜厚を厚く設定することなどは不要である。そのため
第1保護層3の膜厚の増大による製造タクトと材料コス
トの上昇による生産コストの上昇がなく、また、成膜余
熱だけで基板2の温度を高くする場合と比べて基板2の
温度上昇が緩やかであるため基板2に変形が生じること
を防ぐことができる。
As described above, the substrate 2 placed in the film forming apparatus 12 at a temperature not lower than 50 ° C. and not higher than the deformation temperature of the substrate 2 is further subjected to a temperature rise due to film deposition during film formation (hereinafter referred to as film residual heat). It will be hot. Therefore, the energy required for crystallization of the recording material can be supplied as thermal energy from the substrate 2, and even if the crystallization promoting layer 4 alone is not enough to crystallize the recording material, Some or all of the shortfall can be made up. The heating of the substrate 2 by the residual heat of film formation may be an auxiliary one, and may be actively heated by the residual heat of film formation, for example, the first protective layer 3.
It is not necessary to set the film thickness to be large. Therefore, there is no increase in production cost due to an increase in manufacturing tact and material cost due to an increase in the film thickness of the first protective layer 3, and a rise in the temperature of the substrate 2 as compared with a case where the temperature of the substrate 2 is increased only by remaining heat for film formation. Is gentle, it is possible to prevent the substrate 2 from being deformed.

【0024】したがって成膜装置12で成膜するとき
に、基板2の変形を伴うことなく、成膜直後に記録層5
を結晶化状態あるいは少なくとも結晶状態とアモルファ
ス状態の混在した状態とすることができる。この場合、
記録層5が完全な結晶化状態となるか、結晶状態とアモ
ルファス状態の混在した状態となるかは、記録層5を成
膜する記録層材料及び材料組成に大きく依存し、各材料
に対して各様の効果を奏するものである。そして、完全
な結晶化状態となる材料を使用した場合は、初期化不要
な光情報記録媒体1を製造することができる。このよう
に初期化工程を不要とすることにより、初期化システム
の構築に関わる莫大な投資をなくすことができると共に
光情報記録媒体1の生産のスループットを向上させるこ
とができる。また、結晶状態とアモルファス状態の混在
した状態となる材料を使用した場合は、初期化容易な光
情報記録媒体1を製造することができる。この光情報記
録媒体1においては、初期化工程で残存するアモルファ
ス状態を結晶化するだけでよく、初期工程を飛躍的に短
縮することができる。
Therefore, when the film is formed by the film forming apparatus 12, the recording layer 5 can be formed immediately after the film formation without deforming the substrate 2.
Can be in a crystallized state or at least a state in which the crystalline state and the amorphous state are mixed. in this case,
Whether the recording layer 5 is in a completely crystallized state or a state in which the recording layer 5 is mixed with the amorphous state greatly depends on the recording layer material and material composition for forming the recording layer 5. It produces various effects. When a material that is in a completely crystallized state is used, the optical information recording medium 1 that does not require initialization can be manufactured. Eliminating the initialization step in this way can eliminate enormous investment related to the construction of the initialization system and improve the production throughput of the optical information recording medium 1. In addition, when a material that is in a mixed state of a crystalline state and an amorphous state is used, the optical information recording medium 1 that can be easily initialized can be manufactured. In this optical information recording medium 1, it is only necessary to crystallize the amorphous state remaining in the initialization step, and the initial step can be significantly reduced.

【0025】このように成形機11で基板2の成形が終
了後に20秒以内に成膜装置12に投入して基板2の温
度を50℃以上で基板2の変形温度以下に保つために
は、基板2を成形機11から取り出して成膜装置12に
搬送して投入する基板支持体15は,少なくとも基板2
を保持する面を基板2と熱伝導率が近いか同じ材料にす
ることにより、基板2からの放熱を防いで基板2温度を
高温に保てると共に、基板2内における温度分布を均一
にでき、記録層5の結晶化の促進及び均一結晶化を実現
できる。そこで基板2の材料としてポリカーボネイト樹
脂等の高分子材料を使用した場合、基板支持体15の基
板保持面の材料として、熱伝導率が0.1〜1.0(Kcal/m・hr
・℃)のものを選定することが望ましい。
In order to maintain the temperature of the substrate 2 at 50 ° C. or higher and at the deformation temperature of the substrate 2 within 20 seconds after the completion of the molding of the substrate 2 by the molding machine 11, The substrate support 15 for taking out the substrate 2 from the molding machine 11 and transporting it to the film forming apparatus 12 is provided at least for the substrate 2.
By using a material having a thermal conductivity close to or the same as that of the substrate 2 to prevent heat from being emitted from the substrate 2, the temperature of the substrate 2 can be kept high, and the temperature distribution in the substrate 2 can be made uniform. Acceleration of crystallization of the layer 5 and uniform crystallization can be realized. Therefore, when a polymer material such as polycarbonate resin is used as the material of the substrate 2, the material of the substrate holding surface of the substrate support 15 has a thermal conductivity of 0.1 to 1.0 (Kcal / m · hr).
・ ℃) is desirable.

【0026】また、基板支持体15に加熱装置を設け、
搬送時の基板2を保温して基板2の温度を50℃以上で
基板2の変形温度以下に保つようにしても良い。この加
熱装置としては、基板支持体15にヒーターを埋め込む
ことにより簡単に構成することができる。
A heating device is provided on the substrate support 15,
The substrate 2 at the time of transfer may be kept at a temperature higher than or equal to 50 ° C. and lower than or equal to the deformation temperature of the substrate 2. This heating device can be simply configured by embedding a heater in the substrate support 15.

【0027】この基板支持体15成膜装置12の基板搬
入・排出部21に投入した基板2は回転機構部29で回
転する基板ホルダ30により保持されて第1保護層成膜
室22から反射層成膜室28魔で順次送られ、第1保護
層3と結晶化促進層4と記録層5と第2保護層6及び反
射層7が成膜される。この基板2を保持する基板ホルダ
ー30としては、基板2の薄膜成膜領域裏面の少なくと
も一部を密着させる構造としたものを用いることが好ま
しい。このように基板2の薄膜成膜領域裏面の少なくと
も一部を密着させる構造とした基板ホルダー30を使用
することにより、成膜余熱による熱衝撃があった場合で
も、基板2の変形をより確実に防ぐことができる。この
基板2の変形が低減する理由は明確ではないが、密着し
て保持することにより結果的に基板2の剛性が高まり基
板2の変形が低減すると考えられる。
The substrate 2 loaded into the substrate loading / unloading section 21 of the substrate support 15 film forming apparatus 12 is held by a substrate holder 30 which is rotated by a rotating mechanism section 29, and is transferred from the first protective layer film forming chamber 22 to a reflective layer. The first protective layer 3, the crystallization promoting layer 4, the recording layer 5, the second protective layer 6, and the reflective layer 7 are sequentially sent through the film forming chamber 28. As the substrate holder 30 for holding the substrate 2, it is preferable to use one having a structure in which at least a part of the back surface of the thin film deposition region of the substrate 2 is in close contact. By using the substrate holder 30 having such a structure that at least a part of the back surface of the thin film deposition region of the substrate 2 is adhered, even if there is a thermal shock due to the residual heat of the deposition, the deformation of the substrate 2 can be more reliably performed. Can be prevented. Although the reason why the deformation of the substrate 2 is reduced is not clear, it is considered that the rigidity of the substrate 2 is eventually increased and the deformation of the substrate 2 is reduced by holding the substrate 2 in close contact.

【0028】また、基板ホルダー30は、少なくとも基
板2と相対する面を基板2と熱伝導率が近いか同じ材料
とすることが好ましい。これにより基板2からの放熱を
防いで基板2の温度を高温に保てると共に、基板2内の
温度分布を均一にでき、記録層5の結晶化の促進及び均
一結晶化を実現できる。この基板2の材料として代表的
なポリカーボネイト樹脂等の高分子材料を用いた場合に
は、基板ホルダー30の少なくとも基板2と相対する面
の材料として、熱伝導率が0.1〜1.0(Kcal/m・hr・℃)のも
のを選定することが望ましい。
It is preferable that at least the surface of the substrate holder 30 facing the substrate 2 is made of a material having a thermal conductivity close to or the same as that of the substrate 2. Thereby, heat radiation from the substrate 2 can be prevented, the temperature of the substrate 2 can be kept high, the temperature distribution in the substrate 2 can be made uniform, and crystallization of the recording layer 5 can be promoted and uniform crystallization can be realized. When a polymer material such as a typical polycarbonate resin is used as the material of the substrate 2, the material of at least the surface of the substrate holder 30 facing the substrate 2 has a thermal conductivity of 0.1 to 1.0 (Kcal / m · hr · ° C).

【0029】さらに、成膜後における成膜余熱による基
板2の温度上昇を低減し、基板2の変形を低減するため
に、記録層5を成膜後に基板2の冷却を行っても良い。
この基板2の冷却方法は、基板ホルダー30を水冷する
ことにより間接的に基板2を冷却する方法や、専用の冷
却チャンバーを設けて低温Heガスを基板2に吹き付け
る方法などがあるが、インラインで短時間で行える点で
冷却チャンバーを設ける方法が好ましい。この基板2の
冷却は記録層5を成膜後のどの成膜段階で行っても良い
が、反射層7を成膜する前までに行うことが望ましい。
反射層7を成膜後に冷却を行うと、反射層7の成膜時点
で基板2に変形が生じてしまい、冷却の効果が得られな
くなるから、これを防ぐためである。
Further, the substrate 2 may be cooled after forming the recording layer 5 in order to reduce the temperature rise of the substrate 2 due to the residual heat of the film after the film formation and to reduce the deformation of the substrate 2.
The method of cooling the substrate 2 includes a method of indirectly cooling the substrate 2 by cooling the substrate holder 30 with water, and a method of providing a dedicated cooling chamber and blowing a low-temperature He gas onto the substrate 2. A method of providing a cooling chamber is preferable because it can be performed in a short time. The cooling of the substrate 2 may be performed at any film formation stage after the formation of the recording layer 5, but is preferably performed before the formation of the reflective layer 7.
If the cooling is performed after the reflective layer 7 is formed, the substrate 2 is deformed at the time of forming the reflective layer 7, and the cooling effect cannot be obtained.

【0030】前記説明では成形機11で基板2の成形が
終了後に20秒以内に成膜装置12に投入して基板2の
温度を50℃以上で基板2の変形温度以下に保つ場合に
ついて説明したが、成形した基板2を一旦生産ラインか
ら取り出し保管後、再度生産ラインに投入するといった
生産形態で成形余熱が利用できない場合には、成形した
基板2を成膜装置12へ投入する前段階に基板2の加熱
工程を設けると良い。このように成膜装置12へ投入す
る前段階に基板2の加熱工程を設けることにより成形余
熱を利用できない場合でも、成膜装置12へ投入する前
段階にあらかじめ基板2を加熱して50℃以上で基板2
の変形温度以下にして成膜装置12へ投入することがで
きる。
In the above description, the case where the substrate 2 is put into the film forming apparatus 12 within 20 seconds after the completion of the molding of the substrate 2 by the molding machine 11 and the temperature of the substrate 2 is kept at 50 ° C. or more and at the deformation temperature of the substrate 2 or less. However, when the molding substrate 2 is once taken out of the production line, stored, and then put back into the production line, if the molding residual heat is not available, the substrate 2 is placed in a stage before the molding substrate 2 is put into the film forming apparatus 12. It is preferable to provide a second heating step. As described above, even when the remaining heat of molding cannot be used by providing the heating step of the substrate 2 before the charging into the film forming apparatus 12, the substrate 2 is heated in advance before the charging into the film forming apparatus 12 to be 50 ° C. or more. With substrate 2
Can be introduced into the film forming apparatus 12 at a temperature equal to or lower than the deformation temperature.

【0031】[0031]

【実施例】[実施例1] ポリカーボネートを原料とし
て成形機11で射出成形法により基板2を成形し、成形
終了後20秒以内に基板支持体15により成膜装置12
に搬送し投入した。成膜装置12で第1保護層3を膜厚
80nmで形成し、結晶化促進層4を膜厚1nm、記録層
5を膜厚20nm、第2保護層6を膜厚20nm、反射層7
を膜厚200nmで順次成膜した。この際、第1保護層3
と第2保護層6はZnS/SiO、結晶化促進層4に
はBi、記録層5にはGeInSbTe、反射層7には
Alを用いた。このときの成膜のタクト時間は20秒と
した。
[Example 1] A substrate 2 was molded by an injection molding method with a molding machine 11 using polycarbonate as a raw material, and within 20 seconds after the completion of molding, a film forming apparatus 12 was formed by a substrate support 15.
And fed. The film thickness of the first protective layer 3 is formed by the film forming apparatus 12.
The crystallization promoting layer 4 is 1 nm thick, the recording layer 5 is 20 nm thick, the second protective layer 6 is 20 nm thick, and the reflective layer 7 is formed.
Were sequentially formed in a film thickness of 200 nm. At this time, the first protective layer 3
The second protective layer 6 was made of ZnS / SiO 2 , the crystallization promoting layer 4 was made of Bi, the recording layer 5 was made of GeInSbTe, and the reflective layer 7 was made of Al. The tact time for film formation at this time was 20 seconds.

【0032】このようにして作製した相変化型兵法記録
媒体1について、成膜後に測定したメディアの反射率は
18%以上であり、記録層5が結晶化していることが確
認できた。また、基板2の機械特性を測定したところ、
変形が生じていないことが確認できた。さらに、波長66
0nm、NA0.65のピックアップヘッドを用い、記録密
度0.267μm/bit、EFM+変調方式にて情報の記
録再生を行ったところ,問題なく行うことができた。但
し、このときの歩留まりは70%にとどまった。不良発
生原因は、その約65%が反射率未達(基板面内の一部
で記録層の結晶化が不完全で所定の反射率が満たされな
い)であり、残り約35%が基板変形による機械特性の
低下であった。この際、基板2の成形終了後から成膜装
置12への投入時間tと基板2の温度を接触式の熱電対
により調べた結果を下記表に示す。下記表においては基
板温度の面内分布があるため、基板2の温度は上限値と
下限値を示した。このように投入時間tを20秒以内に
することにより、基板2の温度を50℃以上で基板2の
変形温度以下の状態で成膜装置12に投入でき、記録層
5を結晶化できることがわかる。
With respect to the thus-prepared recording medium 1 for phase-change type martial arts, the reflectivity of the medium measured after film formation was 18% or more, and it was confirmed that the recording layer 5 was crystallized. When the mechanical properties of the substrate 2 were measured,
It was confirmed that no deformation occurred. In addition, the wavelength 66
Using a pickup head of 0 nm and NA of 0.65, recording and reproduction of information were performed with a recording density of 0.267 μm / bit and an EFM + modulation method. However, the yield at this time was only 70%. Approximately 65% of the failures are caused by insufficient reflectance (the crystallization of the recording layer is incomplete in a part of the substrate surface and the predetermined reflectance is not satisfied), and the remaining 35% is caused by substrate deformation. The mechanical properties were reduced. At this time, the results of examining the charging time t to the film forming apparatus 12 and the temperature of the substrate 2 after the completion of the molding of the substrate 2 with a contact-type thermocouple are shown in the following table. In the following table, the temperature of the substrate 2 has an upper limit and a lower limit because there is an in-plane distribution of the substrate temperature. By setting the charging time t within 20 seconds, the substrate 2 can be charged into the film forming apparatus 12 at a temperature of 50 ° C. or higher and a deformation temperature of the substrate 2 or lower, and the recording layer 5 can be crystallized. .

【0033】[0033]

【表1】 [Table 1]

【0034】[実施例2] 実施例1において、成形機
11から成膜装置12に搬送する基板支持体15を基板
2と同じ材料であるポリカーボネイト樹脂で製作し、実
施例1と同様に基板2を成形機11から成膜装置12に
投入して成膜した結果、反射率未達による不良が低減
し、歩留まりは80%まで向上した。また、成膜装置1
2でポリカーボネイト樹脂製の密着型基板ホルダー30
を使用したところ、基板変形による不良が低減し、歩留
まりは90%まで向上させることができた。これにより
ポリカーボネイト樹脂製の基板支持体15を用いること
により、基板温度分布による基板面内での結晶化不均一
性を低減するとともにポリカーボネイト樹脂製の密着型
基板ホルダー30を用いることにより、成膜時の基板変
形を低減できることがわかる。
[Example 2] In Example 1, the substrate support 15 to be transported from the molding machine 11 to the film forming apparatus 12 was made of polycarbonate resin, which is the same material as the substrate 2, and the substrate 2 was formed in the same manner as in Example 1. Was introduced into the film forming apparatus 12 from the molding machine 11, and as a result, defects due to insufficient reflectance were reduced, and the yield was improved to 80%. In addition, the film forming apparatus 1
2. Adhesion type substrate holder 30 made of polycarbonate resin
By using, defects due to substrate deformation were reduced, and the yield could be improved to 90%. Thus, by using the substrate support 15 made of polycarbonate resin, the crystallization non-uniformity in the substrate surface due to the substrate temperature distribution is reduced, and by using the close contact type substrate holder 30 made of polycarbonate resin, It can be seen that the substrate deformation can be reduced.

【0035】[実施例3] 実施例2において、成形機
11と成膜装置12を50℃の恒温室内に設け、基板2
の成形と記録層等の成膜を行った結果、反射率未達によ
る不良が低減し、歩留まりは95%まで向上した。
Example 3 In Example 2, the molding machine 11 and the film forming apparatus 12 were provided in a constant temperature chamber at 50 ° C.
As a result of forming the recording layer and forming a recording layer, defects due to insufficient reflectance were reduced, and the yield was improved to 95%.

【0036】[比較例1] 基板2の成形終了後から成
膜装置12に投入するまでの時間を60秒とした以外は
実施例1と同様の構成とした。このとき作製した相変化
型光情報記録媒体1について、成膜後に測定したところ
メディアの反射率は10%以下であり、記録層5の成膜
時には結晶化していないことがわかった。このとき成膜
装置12への基板投入時の基板2の温度は25℃であっ
た。
Comparative Example 1 The structure was the same as that of Example 1 except that the time from completion of the molding of the substrate 2 to the introduction into the film forming apparatus 12 was set to 60 seconds. When the phase change type optical information recording medium 1 manufactured at this time was measured after film formation, the reflectance of the medium was 10% or less, and it was found that the recording layer 5 was not crystallized at the time of film formation. At this time, the temperature of the substrate 2 when the substrate was put into the film forming apparatus 12 was 25 ° C.

【0037】[比較例2] 比較例1において第1保護
層の膜厚を210nmとした。このとき作製した相変化型
光情報記録媒体1について、成膜後に測定したメディア
の反射率は18%以上であり、記録層5が結晶化してい
ることが確認できた。しかし、基板変形が顕著であり、
情報の記録再生はトラッキングが不安定で行うことがで
きなかった。これは成膜余熱による基板温度上昇により
基板2に変形が生じてしまったものと考えれる。
Comparative Example 2 The thickness of the first protective layer in Comparative Example 1 was set to 210 nm. With respect to the phase-change optical information recording medium 1 manufactured at this time, the reflectance of the medium measured after film formation was 18% or more, and it was confirmed that the recording layer 5 was crystallized. However, the substrate deformation is remarkable,
Recording and reproduction of information could not be performed due to unstable tracking. This is presumably because the substrate 2 was deformed due to the substrate temperature rise due to the residual heat of film formation.

【0038】[0038]

【発明の効果】この発明は以上説明したように、光情報
記録媒体を製造するときに、成形した基板の温度を50
℃以上で基板の変形温度以下にして成膜装置に投入して
記録層等を成膜するから、記録層成膜時の基板温度を基
板変形をともなうことなく高温にすることができ、記録
材料によらず初期化不要あるいは初期化容易な光情報記
録媒体を製造することができる。
As described above, according to the present invention, when manufacturing an optical information recording medium, the temperature of the formed substrate is reduced by 50%.
Since the recording layer and the like are formed by setting the substrate at a temperature equal to or higher than ℃ and lower than the deformation temperature of the substrate and feeding the film into a film forming apparatus, the substrate temperature at the time of forming the recording layer can be increased without deforming the substrate. Regardless, an optical information recording medium that does not require initialization or that can be easily initialized can be manufactured.

【0039】また、基板を成形終了後20秒以内に成膜
装置に投入することにより、成形した基板の温度を50
℃以上で基板の変形温度以下にして成膜装置に投入する
ことができる。また、この投入時間のばらつきを2秒以
内にすることにより、成膜装置に投入するときの基板ご
との温度ばらつきを低減して、基板ごとの結晶化ばらつ
きを低減することができる。
The temperature of the formed substrate is reduced by 50% by putting the substrate into the film forming apparatus within 20 seconds after the completion of the forming.
The temperature can be set to a temperature not lower than the temperature of the substrate and not higher than the deformation temperature of the substrate, and the substrate can be introduced into the film forming apparatus. By setting the variation of the charging time within 2 seconds, it is possible to reduce the temperature variation of each substrate when it is loaded into the film forming apparatus, and to reduce the crystallization variation of each substrate.

【0040】また、基板を成膜装置へ投入する前段階
に、基板を50℃以上で基板の変形温度以下に加熱する
加熱工程を設けることにより、成形余熱を利用できない
生産形態においても、記録層成膜時の基板温度を基板変
形をともなうことなく高温にすることができる。
Further, by providing a heating step of heating the substrate to a temperature of 50 ° C. or higher and a temperature equal to or lower than the deformation temperature of the substrate before the substrate is put into the film forming apparatus, the recording layer can be used even in a production mode in which the residual heat of molding cannot be used. The substrate temperature at the time of film formation can be increased without deforming the substrate.

【0041】また、基板を成形する成形機と成膜装置を
50℃の恒温室に配置することにより、成形した基板の
温度を確実に50℃以上で基板の変形温度以下にして成
膜装置に投入することができる。
Further, by disposing the molding machine for forming the substrate and the film forming apparatus in a constant temperature chamber at 50 ° C., the temperature of the formed substrate is surely kept at 50 ° C. or higher and lower than the deformation temperature of the substrate. Can be put in.

【0042】さらに、基板を保持して成膜装置に投入す
る基板支持体の少なくとも基板と相対する面を基板と熱
伝導率が近いか材料又は基板と熱伝導率が同じ材料にし
たり、基板をポリカーボネイト樹脂等の高分子材料を用
いた場合は、基板支持体の少なくとも基板と相対する面
の材料を、熱伝導率が0.1〜1.0(Kcal/m・hr・℃)の範囲の
ものを使用することにより、成膜装置に投入する基板か
らの放熱を防いで基板温度を高温に保てると共に、基板
内の温度分布を均一にでき、記録層結晶化の促進及び均
一結晶化を実現できる。
Further, at least the surface of the substrate support, which is placed in the film forming apparatus while holding the substrate, is made of a material having a thermal conductivity close to or similar to the substrate, or a material having the same thermal conductivity as the substrate. When a polymer material such as a polycarbonate resin is used, at least the material of the surface of the substrate support opposed to the substrate, having a thermal conductivity in the range of 0.1 to 1.0 (Kcal / mhr-C) is used. Thus, heat radiation from the substrate put into the film forming apparatus can be prevented, the substrate temperature can be kept high, the temperature distribution in the substrate can be made uniform, and crystallization of the recording layer can be promoted and uniform crystallization can be realized.

【0043】また、成膜装置で基板を保持する基板ホル
ダーの基板の薄膜成膜領域裏面の少なくとも一部を基板
に密着させる構造とし、基板ホルダーの少なくとも基板
と相対する面を基板と熱伝導率が近いか材料又は基板と
熱伝導率が同じ材料にしたり、基板をポリカーボネイト
樹脂等の高分子材料を用いた場合、基板ホルダーの少な
くとも基板と相対する面の材料を、熱伝導率が0.1〜1.0
(Kcal/m・hr・℃)の範囲のものを使用することにより、成
膜中の基板からの放熱を防いで基板温度を高温に保てる
と共に、基板内の温度分布を均一にでき、記録層結晶化
の促進及び均一結晶化を実現できる。
In addition, at least a part of the back surface of the thin film deposition region of the substrate of the substrate holder for holding the substrate in the film forming apparatus is made to adhere to the substrate, and at least the surface of the substrate holder facing the substrate is in contact with the substrate. If the material is close to the material or the same thermal conductivity as the substrate, or if the substrate is a polymer material such as polycarbonate resin, at least the material of the surface of the substrate holder facing the substrate has a thermal conductivity of 0.1 to 1.0.
(Kcal / m ・ hr ・ ° C) prevents heat radiation from the substrate during film formation, keeps the substrate temperature high, and makes the temperature distribution in the substrate uniform, and the recording layer Acceleration of crystallization and uniform crystallization can be realized.

【0044】また、成膜装置で記録層成膜後に基板を冷
却することにより、基板変形を低減することができる。
Further, by cooling the substrate after the recording layer is formed by the film forming apparatus, the deformation of the substrate can be reduced.

【0045】この光情報記録媒体の製造装置で製造した
光情報記録媒体は、高密度記録が可能で、初期化不要あ
るいは初期化容易となり、初期化工程を不要又は簡略化
することにより、初期化システムの構築に関わる莫大な
投資をなくすことができると共に光情報記録媒体の生産
のスループットを向上させることができる。
The optical information recording medium manufactured by this optical information recording medium manufacturing apparatus is capable of high-density recording, requires no initialization or is easy to initialize, and eliminates or simplifies the initialization process. It is possible to eliminate enormous investment related to the construction of the system and to improve the production throughput of the optical information recording medium.

【図面の簡単な説明】[Brief description of the drawings]

【図1】この発明の光情報記録媒体の構成を示す断面模
式図である。
FIG. 1 is a schematic sectional view showing a configuration of an optical information recording medium of the present invention.

【図2】光情報記録媒体の製造装置の構成図である。FIG. 2 is a configuration diagram of an apparatus for manufacturing an optical information recording medium.

【図3】成膜装置の構成図である。FIG. 3 is a configuration diagram of a film forming apparatus.

【符号の説明】[Explanation of symbols]

1;光情報記録媒体、2;基板、3;第1保護層、4;
結晶化促進層、5;記録層、6;第2保護層、7;反射
層、11;成形機、12;成膜装置、13;回転軸、1
4;伸縮アーム、15;基板支持体、21;基板搬入・
搬出室、22,23;第1保護層成膜室、24;結晶化
促進層成膜室、25;記録層成膜室、26,27;第2
保護層成膜室、28;反射層成膜室、29;回転機構
部、30;基板ホルダー、31;伸縮アーム。
DESCRIPTION OF SYMBOLS 1; Optical information recording medium, 2; Substrate, 3; 1st protective layer, 4;
Crystallization promoting layer, 5; recording layer, 6; second protective layer, 7; reflective layer, 11; molding machine, 12; film forming apparatus, 13;
4; telescopic arm, 15; substrate support, 21;
Unloading chambers, 22, 23; first protective layer film forming chamber, 24; crystallization promoting layer film forming chamber, 25; recording layer film forming chamber, 26, 27; second
Protective layer film forming chamber, 28; reflective layer film forming chamber, 29; rotating mechanism section, 30; substrate holder, 31;

───────────────────────────────────────────────────── フロントページの続き (72)発明者 真貝 勝 東京都大田区中馬込1丁目3番6号 株式 会社リコー内 (72)発明者 阿萬 康知 東京都大田区中馬込1丁目3番6号 株式 会社リコー内 (72)発明者 柴田 清人 東京都大田区中馬込1丁目3番6号 株式 会社リコー内 Fターム(参考) 5D121 AA01 AA02 AA03 DD05 DD13 GG07 GG20 JJ03  ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Masaru Makai 1-3-6 Nakamagome, Ota-ku, Tokyo Inside Ricoh Company, Ltd. (72) Inventor Yasuchi Aman 1-3-6 Nakamagome, Ota-ku, Tokyo In Ricoh Co., Ltd. (72) Inventor Kiyoto Shibata 1-3-6 Nakamagome, Ota-ku, Tokyo F-term in Ricoh Co., Ltd. 5D121 AA01 AA02 AA03 DD05 DD13 GG07 GG20 JJ03

Claims (15)

【特許請求の範囲】[Claims] 【請求項1】 成形された基板を基板支持体で成膜装置
に搬送して投入して少なくとも第1保護層と結晶化促進
層と記録層と第2保護層及び反射層を成膜する光情報記
録媒体の製造方法において、 成形した基板の温度を50℃以上で基板の変形温度以下
にして成膜装置に投入することを特徴とする光情報記録
媒体の製造方法。
1. A light for transporting a formed substrate to a film forming apparatus with a substrate support and throwing the same into at least a first protective layer, a crystallization promoting layer, a recording layer, a second protective layer, and a reflective layer. A method for manufacturing an optical information recording medium, comprising: setting a molded substrate at a temperature of 50 ° C. or higher to a deformation temperature of the substrate or lower and feeding the formed substrate to a film forming apparatus.
【請求項2】 上記基板を成形終了後20秒以内に成膜
装置に投入する請求項1記載の光情報記録媒体の製造方
法。
2. The method for manufacturing an optical information recording medium according to claim 1, wherein said substrate is put into a film forming apparatus within 20 seconds after the completion of molding.
【請求項3】 上記投入時間のばらつきを2秒以内にし
た請求項2記載の光情報記録媒体の製造方法。
3. The method for manufacturing an optical information recording medium according to claim 2, wherein the variation of the charging time is set within 2 seconds.
【請求項4】 上記基板を成膜装置へ投入する前段階
に、基板を50℃以上で基板の変形温度以下に加熱する
加熱工程を有する請求項1記載の光情報記録媒体の製造
方法。
4. The method for manufacturing an optical information recording medium according to claim 1, further comprising a heating step of heating the substrate to a temperature of not less than 50 ° C. and not more than a deformation temperature of the substrate before the substrate is put into the film forming apparatus.
【請求項5】 成形された基板を基板支持体で成膜装置
に搬送して投入して少なくとも第1保護層と結晶化促進
層と記録層と第2保護層及び反射層を成膜する光情報記
録媒体の製造装置において、 成形した基板の温度を50℃以上で基板の変形温度以下
にして成膜装置に投入することを特徴とする光情報記録
媒体の製造装置。
5. A light for transporting the formed substrate to a film forming apparatus by a substrate support and throwing the same into at least a first protective layer, a crystallization promoting layer, a recording layer, a second protective layer, and a reflective layer. An apparatus for manufacturing an optical information recording medium, wherein the temperature of a molded substrate is set to 50 ° C. or higher and equal to or lower than the deformation temperature of the substrate, and the molded substrate is put into a film forming apparatus.
【請求項6】 上記基板を成形終了後20秒以内に成膜
装置に投入する請求項5記載の光情報記録媒体の製造装
置。
6. An apparatus for manufacturing an optical information recording medium according to claim 5, wherein said substrate is put into a film forming apparatus within 20 seconds after the completion of molding.
【請求項7】 上記基板を成形する成形機と成膜装置を
50℃の恒温室に配置した請求項5記載の光情報記録媒
体の製造装置。
7. An apparatus for manufacturing an optical information recording medium according to claim 5, wherein a molding machine for forming said substrate and a film forming apparatus are arranged in a constant temperature chamber at 50 ° C.
【請求項8】 上記基板を保持して成膜装置に投入する
基板支持体の少なくとも基板と相対する面を基板と熱伝
導率が近いか材料又は基板と熱伝導率が同じ材料とした
請求項5又は6記載の光情報記録媒体の製造装置。
8. A substrate supporting member to be loaded into a film forming apparatus while holding the substrate, at least a surface facing the substrate is made of a material having a thermal conductivity close to that of the substrate or a material having the same thermal conductivity as the substrate. 7. An apparatus for manufacturing an optical information recording medium according to 5 or 6.
【請求項9】 上記基板をポリカーボネイト樹脂等の高
分子材料を用い、基板支持体の少なくとも基板と相対す
る面の材料を、熱伝導率が0.1〜1.0(Kcal/m・hr・℃)の範
囲のものを使用した請求項8記載の光情報記録媒体の製
造装置。
9. The method according to claim 1, wherein the substrate is made of a polymer material such as polycarbonate resin, and the material of at least the surface of the substrate support facing the substrate has a thermal conductivity in the range of 0.1 to 1.0 (Kcal / m · hr · ° C.). 9. The apparatus for manufacturing an optical information recording medium according to claim 8, wherein said apparatus is used.
【請求項10】 上記基板支持体に加熱装置を有する請
求項8又は9記載の光情報記録媒体の製造装置。
10. The apparatus for manufacturing an optical information recording medium according to claim 8, wherein said substrate support has a heating device.
【請求項11】 上記成膜装置で基板を保持する基板ホ
ルダーの基板の薄膜成膜領域裏面の少なくとも一部を基
板に密着させる構造とした請求項5乃至10のいずれか
に記載の光情報記録媒体の製造装置。
11. The optical information recording device according to claim 5, wherein at least a part of the back surface of the thin film deposition area of the substrate of the substrate holder for holding the substrate by the film deposition apparatus is brought into close contact with the substrate. Media manufacturing equipment.
【請求項12】 上記基板ホルダーの少なくとも基板と
相対する面を基板と熱伝導率が近いか材料又は基板と熱
伝導率が同じ材料とした請求項11記載の光情報記録媒
体の製造装置。
12. The optical information recording medium manufacturing apparatus according to claim 11, wherein at least a surface of the substrate holder facing the substrate is made of a material having a thermal conductivity close to or a material having the same thermal conductivity as the substrate.
【請求項13】 上記基板をポリカーボネイト樹脂等の
高分子材料を用い、基板ホルダーの少なくとも基板と相
対する面の材料を、熱伝導率が0.1〜1.0(Kcal/m・hr・℃)
の範囲のものを使用した請求項12記載の光情報記録媒
体の製造装置。
13. The substrate is made of a polymer material such as polycarbonate resin, and the material of at least the surface of the substrate holder facing the substrate is made to have a thermal conductivity of 0.1 to 1.0 (Kcal / m · hr · ° C.).
13. The apparatus for manufacturing an optical information recording medium according to claim 12, wherein the optical information recording medium is used.
【請求項14】 上記成膜装置で記録層成膜後に基板を
冷却する請求項5乃至13のいずれかに記載の光情報記
録媒体の製造装置。
14. The optical information recording medium manufacturing apparatus according to claim 5, wherein the substrate is cooled after the recording layer is formed by the film forming apparatus.
【請求項15】 請求項5乃至14の光情報記録媒体の
製造装置で製造したことを特徴とする光情報記録媒体。
15. An optical information recording medium manufactured by the optical information recording medium manufacturing apparatus according to claim 5.
JP2001094590A 2001-03-29 2001-03-29 Method of manufacturing optical information recording medium, apparatus for manufacturing the same and optical information recording medium Pending JP2002298452A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
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Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
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Publications (1)

Publication Number Publication Date
JP2002298452A true JP2002298452A (en) 2002-10-11

Family

ID=18948761

Family Applications (1)

Application Number Title Priority Date Filing Date
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Country Status (1)

Country Link
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011058048A (en) * 2009-09-10 2011-03-24 Nikuni:Kk Vacuum film deposition method and device therefor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011058048A (en) * 2009-09-10 2011-03-24 Nikuni:Kk Vacuum film deposition method and device therefor

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