JP2002296231A - Concentration measuring method and measuring device for additive for plating liquid - Google Patents

Concentration measuring method and measuring device for additive for plating liquid

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Publication number
JP2002296231A
JP2002296231A JP2001101311A JP2001101311A JP2002296231A JP 2002296231 A JP2002296231 A JP 2002296231A JP 2001101311 A JP2001101311 A JP 2001101311A JP 2001101311 A JP2001101311 A JP 2001101311A JP 2002296231 A JP2002296231 A JP 2002296231A
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JP
Japan
Prior art keywords
plating
concentration
solution
additive
measuring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2001101311A
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Japanese (ja)
Inventor
Hirofumi Kurosawa
弘文 黒沢
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
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Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP2001101311A priority Critical patent/JP2002296231A/en
Publication of JP2002296231A publication Critical patent/JP2002296231A/en
Withdrawn legal-status Critical Current

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Abstract

PROBLEM TO BE SOLVED: To resolve a problem that there is a measurement method capable of rapidly and simply measuring the concentration of an additive for a plating liquid and using cyclic voltammography, but this conventional method causes large dispersion of its measurement results which may affect plating quality of a product, and the dispersion of the measurement results is caused by dispersion of a plating condition of a basic liquid and variation of liquid temperature. SOLUTION: By adjusting the plating condition of the basic liquid to a certain value when measurement is required, measurement accuracy is improved. Regarding influence by the liquid temperature, a measured value is corrected according to the liquid temperature for every plating condition measurement depending on the liquid temperature and plating condition basic data and thus the measurement accuracy is improved.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明はサイクリックボルタ
モグラフィを使用しためっき液の添加剤濃度測定方法に
関する。
The present invention relates to a method for measuring the concentration of an additive in a plating solution using cyclic voltammography.

【0002】本発明はサイクリックボルタモグラフィを
使用しためっき液の添加剤濃度濃度測定装置に関する。
The present invention relates to an apparatus for measuring the concentration of an additive in a plating solution using cyclic voltammography.

【0003】[0003]

【従来の技術】まず、図7(a)によりサイクリックボ
ルタモグラフィによるめっき状態の測定について説明す
る。基本液(702)中に作用電極(711)、参照電極(712)、
対極(713)を浸漬させ、作用電極と対極間の電流と作用
電極と参照電極間の電圧を測定する機構(714)と、作用
電極と対極間の電位を走査する機構(715)を有し、前記
作用電極と対極間の電位をある範囲において繰返し走査
すると作用電極では走査される電位にあわせてめっき
(析出)とめっきされた金属の剥離(溶解)が繰返され
る。この関係を図7(b)に示す。図7(b)のA部は
作用電極にめっきされるめっき量を示し、B部は前期作
用電極のめっきの剥離量を示す。A部とB部の面積は等
しい。A部及びB部の面積の増加はめっき量の増加を示
し、減少はめっき量の減少を示す。
2. Description of the Related Art First, measurement of a plating state by cyclic voltammography will be described with reference to FIG. Working electrode (711), reference electrode (712) in basic liquid (702),
It has a mechanism (714) for immersing the counter electrode (713) and measuring the current between the working electrode and the counter electrode and the voltage between the working electrode and the reference electrode, and a mechanism (715) for scanning the potential between the working electrode and the counter electrode. When the potential between the working electrode and the counter electrode is repeatedly scanned in a certain range, plating (deposition) and peeling (dissolution) of the plated metal are repeated in the working electrode in accordance with the scanned potential. This relationship is shown in FIG. Part A in FIG. 7B shows the amount of plating on the working electrode, and part B shows the amount of plating peeled off on the working electrode. The area of the part A and the part B are equal. An increase in the area of the portions A and B indicates an increase in the plating amount, and a decrease indicates a decrease in the plating amount.

【0004】従来のサイクリックボルタモグラフィを用
いためっき液中の添加剤濃度測定は以下の(a)からの
手順で行っていた。
The measurement of the concentration of an additive in a plating solution using a conventional cyclic voltammography has been performed according to the following procedure (a).

【0005】本例では任意のめっき液の添加剤をめっき
抑制剤(抑制剤)として、めっき状態をサイクリックボ
ルタモグラフィのめっき量として説明する。図8を用い
て抑制剤滴下量とめっき量の関係を説明する。
In this example, an additive of an arbitrary plating solution will be described as a plating inhibitor (inhibitor), and a plating state will be described as a plating amount of cyclic voltammography. The relationship between the amount of the inhibitor dripped and the amount of plating will be described with reference to FIG.

【0006】(a)基本液のめっき量を測定する。その
結果をA0(801)とする。(b)基本液に抑制剤濃度既
知液を定量滴下し、前記抑制剤混合液を十分攪拌する。
(c)前記抑制剤混合液のめっき量を測定する。(d)
前記(b)と(c)を複数回繰返し、抑制剤滴下量と基
本液と混合液のめっき量変化の関係を検量線として求め
る。その関係が図8であり、曲線(802)を検量線とす
る。
(A) The plating amount of the basic solution is measured. The result is defined as A0 (801). (B) A solution having a known inhibitor concentration is dropped dropwise to the basic solution, and the inhibitor mixture is sufficiently stirred.
(C) The plating amount of the inhibitor mixture is measured. (D)
The above (b) and (c) are repeated a plurality of times, and the relationship between the inhibitor dropping amount and the change in the plating amount of the basic solution and the mixed solution is determined as a calibration curve. FIG. 8 shows the relationship, and the curve (802) is used as a calibration curve.

【0007】図8は抑制剤の添加につれてめっき量が減
少する、即ち抑制剤によりめっき量が抑制されているこ
とを示す。(e)前記(a)と同量の新たな基本液のめ
っき量を測定する。その結果をA1(803)とする。
(f)前記(e)の基本液に抑制剤濃度未知液を任意の
量滴下し十分攪拌した後そのめっき量を測定する。(80
4)(g)前記(d)で得られた検量線から、前記(f)
で測定されためっき量を基に滴下された抑制剤量(805)
が求められる。以上により抑制剤濃度が算出される。
FIG. 8 shows that the amount of plating decreases with the addition of the inhibitor, that is, the amount of plating is suppressed by the inhibitor. (E) Measure the plating amount of the same amount of new basic solution as in (a). The result is defined as A1 (803).
(F) An arbitrary amount of the inhibitor concentration unknown solution is dropped into the basic solution of (e) above, and after sufficient stirring, the plating amount is measured. (80
4) (g) From the calibration curve obtained in (d), (f)
Of inhibitor added based on the plating amount measured in (805)
Is required. Thus, the inhibitor concentration is calculated.

【0008】[0008]

【発明が解決しようとする課題】めっき液の添加剤はめ
っき品質に影響するため、添加剤の濃度管理が非常に重
要となる。例えば、超LSIの銅配線は電解めっき法で
製造されている。前記銅配線のめっき液の添加剤はめっ
き促進剤、めっき抑制剤、めっき平坦化剤などがある。
これらの添加剤濃度が適性値に管理されていない場合、
ビア内部にボイドと呼ばれる空洞や、めっき面が凸状に
異常に盛り上がるオーバープレートなどの不良原因とな
る。これらの不良は超LSIの製造歩留まりを低下させ
ると共に、製造コストを高める原因にもなる。また、ビ
ア内に発生したボイドは、製造工程中で発見されず市場
に出される可能性もある。その場合、超LSI単体の不
良だけでなく、超LSIを使用しているシステム全体の
不良となる場合もある。
Since the additive of the plating solution affects the plating quality, it is very important to control the concentration of the additive. For example, copper wiring of a super LSI is manufactured by an electrolytic plating method. Additives of the plating solution for the copper wiring include a plating accelerator, a plating inhibitor, and a plating flattening agent.
If these additive concentrations are not controlled to the appropriate values,
This causes defects such as voids inside the vias and overplates in which the plating surface is abnormally raised in a convex shape. These defects lower the manufacturing yield of the VLSI and also increase the manufacturing cost. In addition, voids generated in vias may be put on the market without being discovered during the manufacturing process. In such a case, not only the failure of the VLSI alone but also the failure of the entire system using the VLSI may occur.

【0009】めっき液の添加剤濃度測定を、従来の方法
で行うと得られる添加剤濃度のばらつきは同一サンプル
を測定しても±20%とばらつくことがある。めっきさ
れる製品によっては従来のめっき液の添加剤濃度測定は
使用できない。
When the concentration of an additive in a plating solution is measured by a conventional method, the dispersion of the obtained additive concentration may vary as much as ± 20% even when the same sample is measured. Conventional plating solution additive concentration measurement cannot be used depending on the product to be plated.

【0010】めっき液の添加剤濃度測定値が従来方法で
は、ばらつく原因を前項の例を使用して説明する。
The reason why the measured value of the additive concentration of the plating solution varies in the conventional method will be described with reference to the example of the preceding section.

【0011】前項(a)と前項(e)で測定される基本
液のA0とA1は、本来同じ値となるはずである。しか
し実際は測定装置の特性や測定環境の影響によりA0と
A1はある差を持つ。抑制剤未知液測定時のA1がA0
とずれることは、事前に求めた検量線からずれることに
なる。A0とA1の差が大きくなるほど、抑制剤濃度未
知液の測定結果は真値からずれることとなる。
A0 and A1 of the basic solution measured in the preceding paragraph (a) and the preceding paragraph (e) should be originally the same value. However, A0 and A1 actually have a certain difference due to the influence of the characteristics of the measuring device and the measuring environment. A1 at the time of measuring the unknown liquid of the inhibitor is A0
Deviates from the previously obtained calibration curve. As the difference between A0 and A1 increases, the measurement result of the liquid with unknown inhibitor concentration deviates from the true value.

【0012】また、測定環境により基本液や添加剤と基
本液との混合液の温度が常時変化する場合も、添加剤濃
度測定値をばらつかせる原因となる。
Also, the temperature of the basic solution or the mixture of the additive and the basic solution constantly changes depending on the measurement environment, which also causes the measured value of the additive concentration to fluctuate.

【0013】A0とA1の比を横軸に、抑制剤濃度のば
らつきを縦軸にし、図4のグラフ(410)に示す。
The ratio between A0 and A1 is plotted on the abscissa and the variation in the inhibitor concentration is plotted on the ordinate, as shown in the graph (410) of FIG.

【0014】図4、グラフ(410)の結果では、A0とA
1の差が大きくなると(横軸の1から離れると)抑制剤
濃度のばらつきが大きくなることを示している。
In FIG. 4 and the result of the graph (410), A0 and A
It shows that the larger the difference of 1 (away from 1 on the horizontal axis), the greater the variation in the inhibitor concentration.

【0015】また基本液や添加剤と基本液との混合液の
温度が1℃変化すると、サイクリックボルタモグラフィ
のめっき量が約1mC変化する場合もある。
If the temperature of the basic solution or the mixture of the additive and the basic solution changes by 1 ° C., the plating amount of cyclic voltammography may change by about 1 mC.

【0016】[0016]

【課題を解決するための手段】請求項1に記載された、
めっき液の添加剤濃度測定方法は、基本液のめっき状
態を測定する。基本液に添加剤濃度既知液を滴下し、
濃度既知混合液のめっき状態を測定する。添加剤濃度
とめっき状態の変化の関係を検量線で把握する。新た
な基本液のめっき状態を測定し、前記のめっき状態に
合わせてのめっき状態を調整する。前記の基本液
に添加剤濃度未知液を滴下し、濃度未知混合液のめっき
状態を測定する。前記の検量線を基に、のめっき
状態から滴下した濃度未知液の添加剤濃度を算出する。
前記からのめっき状態をサイクリックボルタモグラ
フィのめっき量あるいはめっき剥離量により測定する、
めっき液の添加剤濃度測定方法において、前記のめっ
き量あるいはめっき剥離量に合わせ前記のめっき量あ
るいはめっき剥離量を調整することを特徴とする、めっ
き液の添加剤濃度測定方法上記めっき液の添加剤濃度測
定方法によれば、前記添加剤濃度を高精度に測定でき、
めっき不良が減少する。また優れためっき品質の製品を
供給できる。
Means for Solving the Problems According to claim 1,
In the method of measuring the concentration of the additive in the plating solution, the plating state of the basic solution is measured. A known additive concentration solution is dropped into the basic solution,
The plating state of the mixed solution having a known concentration is measured. The relationship between the additive concentration and the change in plating state is grasped by a calibration curve. The plating state of the new basic solution is measured, and the plating state is adjusted according to the plating state. An unknown additive concentration solution is dropped into the basic solution, and the plating state of the unknown concentration mixed solution is measured. Based on the above calibration curve, the additive concentration of the concentration unknown liquid dropped from the plating state is calculated.
The plating state from the above is measured by a plating amount or a plating peeling amount of cyclic voltammography,
In the method for measuring the concentration of an additive in a plating solution, the method for measuring the concentration of an additive in a plating solution is characterized by adjusting the amount of plating or the amount of plating peeling according to the amount of plating or the amount of plating peeling. According to the agent concentration measuring method, the additive concentration can be measured with high accuracy,
Plating defects are reduced. Also, products with excellent plating quality can be supplied.

【0017】請求項2に記載された、めっき液の添加剤
濃度測定方法は、基本液及び混合液の測定されためっき
状態を液温度で補正することを特徴とする、めっき液の
添加剤濃度測定方法上記めっき液の添加剤濃度測定方法
によれば、前記添加剤濃度を高精度に測定でき、めっき
不良が減少する。また優れためっき品質の製品を供給で
きる。
According to a second aspect of the present invention, there is provided a method for measuring the concentration of an additive in a plating solution, wherein the measured plating conditions of the basic solution and the mixed solution are corrected by the solution temperature. Measurement Method According to the method for measuring the concentration of an additive in a plating solution, the concentration of the additive can be measured with high accuracy, and plating defects are reduced. Also, products with excellent plating quality can be supplied.

【0018】請求項3に記載された、めっき液の添加剤
濃度測定方法は、請求項1、2のめっき液の添加剤濃度
測定方法において、めっき状態をサイクリックボルタモ
グラフィのめっき時あるいは剥離時の電流(電荷量)ピ
ーク値により濃度測定することを特徴とする、めっき液
の添加剤濃度測定方法上記めっき液の添加剤濃度測定方
法によれば、前記添加剤濃度を高精度に測定でき、めっ
き不良が減少する。また優れためっき品質の製品を供給
できる。
According to a third aspect of the present invention, there is provided a method for measuring the concentration of an additive in a plating solution according to the first or second aspect, wherein the plating state is determined during cyclic voltammography plating or peeling. The method for measuring the concentration of an additive in a plating solution according to the method for measuring the concentration of an additive in a plating solution is characterized in that the concentration of the additive is measured by the peak value of the current (charge amount) of the plating solution. Plating defects are reduced. Also, products with excellent plating quality can be supplied.

【0019】請求項4に記載された、めっき液の添加剤
濃度測定装置は、請求項1の特徴を有することを特徴と
する、めっき液の添加剤濃度測定装置上記めっき液の添
加剤濃度測定装置によれば、前記添加剤濃度を高精度に
測定でき、めっき不良が減少する。また優れためっき品
質の製品を供給できる。
According to a fourth aspect of the present invention, there is provided an apparatus for measuring the concentration of an additive in a plating solution, the apparatus having the characteristics of the first aspect. According to the apparatus, the additive concentration can be measured with high accuracy, and plating defects are reduced. Also, products with excellent plating quality can be supplied.

【0020】請求項5に記載された、めっき液の添加剤
濃度測定装置は、請求項2の特徴を有することを特徴と
する、めっき液の添加剤濃度測定装置上記めっき液の添
加剤濃度測定装置によれば、前記添加剤濃度を高精度に
測定でき、めっき不良が減少する。また優れためっき品
質の製品を供給できる。
According to a fifth aspect of the present invention, there is provided an apparatus for measuring the concentration of an additive in a plating solution, the apparatus comprising: According to the apparatus, the additive concentration can be measured with high accuracy, and plating defects are reduced. Also, products with excellent plating quality can be supplied.

【0021】請求項6に記載された、めっき液の添加剤
濃度測定装置は、請求項3の特徴を有することを特徴と
する、めっき液の添加剤濃度測定装置上記めっき液の添
加剤濃度測定装置によれば、前記添加剤濃度を高精度に
測定でき、めっき不良が減少する。また優れためっき品
質の製品を供給できる。
According to a sixth aspect of the present invention, there is provided an apparatus for measuring the concentration of an additive in a plating solution, wherein the apparatus has the characteristics of the third aspect. According to the apparatus, the additive concentration can be measured with high accuracy, and plating defects are reduced. Also, products with excellent plating quality can be supplied.

【0022】[0022]

【発明の実施の形態】以下、本発明の実施形態を図面に
基づいて説明する (実施例1)本実施例を図1、図2、図3を用いて説明
する。図1、図2、図3はそれぞれ請求項1の発明であ
るめっき液の添加剤濃度測定方法を示す工程フロー、構
成図、グラフである。本実施例では測定するめっき液の
添加剤をめっき抑制剤(抑制剤)として、めっき状態を
ボルタモグラフィのめっき量(単位はmC)として説明
する。まず、図2により装置構成を説明する。専用ビー
カ(201)にはめっき量を測定される基本液(201)があり、
基本液には電極ユニット(205)の3本の電極が浸漬され
ている。めっき量測定時の電位走査は電位走査ユニット
(206)から電極制御ユニット(204)を介して電位走査が行
われる。電位走査の結果変化する電流値(電荷)は電流
測定ユニット(207)により測定され制御装置(203)に伝え
られる。制御部では電位走査、電流値を計算部で処理
し、ボルタモグラフィによるめっき量、剥離量、各ピー
ク値等を算出する。また、滴下ユニット(208)の滴下量
とめっき量などにより検量線、めっき量からの滴下量算
出などを行う。滴下ユニット(208)は濃度既知液、濃度
未知液を制御部の指令により滴下を行う。
DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments of the present invention will be described below with reference to the drawings. (Embodiment 1) This embodiment will be described with reference to FIGS. FIGS. 1, 2, and 3 are a process flow, a configuration diagram, and a graph, respectively, showing a method for measuring the concentration of an additive in a plating solution according to the first embodiment. In this example, the additive of the plating solution to be measured is described as a plating inhibitor (suppressor), and the plating state is described as a plating amount (unit: mC) of voltammography. First, the device configuration will be described with reference to FIG. The dedicated beaker (201) has a basic solution (201) for measuring the plating amount,
Three electrodes of the electrode unit (205) are immersed in the basic liquid. Potential scanning unit when measuring plating amount
From (206), potential scanning is performed via the electrode control unit (204). The current value (charge) that changes as a result of the potential scanning is measured by the current measurement unit (207) and transmitted to the control device (203). In the control section, the potential scanning and the current value are processed in the calculation section, and the plating amount, peeling amount, each peak value and the like by voltammography are calculated. Further, a calibration curve, a drop amount calculation from the plating amount, and the like are performed based on the drop amount and the plating amount of the drop unit (208). The dropping unit (208) drops the known concentration liquid and the unknown concentration liquid according to a command from the control unit.

【0023】次に図1による説明をする。図1の(a)か
ら(e)で「抑制剤濃度既知液」による、「抑制剤滴下量
とめっき量変化の把握」の測定が行われる。(a)専用ビ
ーカ(201)に準備した基本液(202)100ミリリットル
(以下、ml)のめっき量を測定し、制御部装置(203)の
記憶部に記憶する。本実施例では測定されためっき量を
A0とする。(b)抑制剤濃度既知液を0.05ml(a)の基
本液に滴下し10秒間攪拌する。(c)(b)の濃度既知混合
液のめっき量を測定する。(d)抑制剤の滴下量が規定の
回数に達するまで、前記(b)へ戻り抑制剤の滴下、めっ
き量の測定する。滴下量が規定値に達した場合は次の
(e)へ進む。(e)抑制剤滴下量とめっき量の変化を制御部
で検量線として把握する。この結果を図3のグラフ(31
0)に示す。グラフ(310)の縦軸はめっき量(mC)、横軸は
濃度既知液滴下量(ml)である。めっき量A0(311)は抑
制剤添加量0mlの位置にくる。滴下量の増加に従ってめ
っき量が少なくなること、即ち抑制剤によりめっき量が
抑制されていることを示している。ここまでに使用され
た基本液と抑制剤の混合液は処分する。
Next, a description will be given with reference to FIG. In FIGS. 1 (a) to 1 (e), the measurement of "understand the dripping amount of the inhibitor and the change in the plating amount" is performed using the "solution with known inhibitor concentration". (a) The amount of plating of 100 milliliters (hereinafter, ml) of the basic solution (202) prepared in the dedicated beaker (201) is measured and stored in the storage unit of the control unit (203). In this embodiment, the measured plating amount is A0. (b) A solution having a known inhibitor concentration is dropped into 0.05 ml (a) of the basic solution and stirred for 10 seconds. (c) The plating amount of the mixed solution of known concentration in (b) is measured. (d) Return to (b) above and measure the amount of the inhibitor and the amount of plating until the amount of the inhibitor dropped reaches the prescribed number of times. When the drop amount reaches the specified value,
Proceed to (e). (e) The change of the inhibitor dropping amount and the plating amount is grasped by the control unit as a calibration curve. The results are shown in the graph of FIG.
0). The vertical axis of the graph (310) is the plating amount (mC), and the horizontal axis is the drop amount (ml) of known concentration. The plating amount A0 (311) comes to the position where the inhibitor addition amount is 0 ml. This indicates that the plating amount decreases as the dropping amount increases, that is, the plating amount is suppressed by the inhibitor. Dispose of the mixture of base solution and inhibitor used so far.

【0024】次に、(f)から(j)で「抑制剤濃度未知液」
の濃度測定が行われる。(f)新たな基本液100mlのめ
っき量A1を測定する。(g)前記めっき量A1(図3,322)
をA0(図3、321)となるように電極ユニット(204)を調
整する(図3、324)。(h)抑制剤濃度未知液の容量を測定
し(f)の基本液に滴下し10秒間攪拌する。本実施例で
は濃度未知液を0.5ml滴下した。(i)(h)の濃度未知混
合液のめっき量を測定する。この値をB1(図3、323)
とする。(j)(e)で求められた検量線にB1を対応させ、
抑制剤添加量を求め濃度を算出する。
Next, in (f) to (j), the "solution of unknown inhibitor concentration"
Is measured. (f) The plating amount A1 of 100 ml of the new basic solution is measured. (g) The plating amount A1 (FIG. 3, 322)
Is adjusted to A0 (FIG. 3, 321) by adjusting the electrode unit (204) (FIG. 3, 324). (h) Measure the volume of the inhibitor concentration unknown solution, drop it into the basic solution of (f), and stir for 10 seconds. In this example, 0.5 ml of the unknown concentration liquid was dropped. (i) The plating amount of the mixed solution of unknown concentration in (h) is measured. This value is represented by B1 (323 in FIG. 3).
And (j) Make B1 correspond to the calibration curve obtained in (e),
The amount of the inhibitor added is determined and the concentration is calculated.

【0025】本実施例でのめっき量A1をA0に合わせ
るように調整後、抑制剤測定を行った結果を図3のグラ
フ(320)に示す。グラフ(320)では、B1が12.5mC、
検量線から求めた抑制剤滴下量が0.5mlとなってい
る。以後の濃度算出は、抑制剤濃度、基本液量、滴下し
た抑制剤未知液量、前記B1から求めた抑制剤滴下量
(0.5ml)から求められる。
After adjusting the plating amount A1 in this example to match A0, the results of measurement of the inhibitor are shown in the graph (320) of FIG. In the graph (320), B1 is 12.5 mC,
The amount of the inhibitor dropped from the calibration curve was 0.5 ml. Subsequent concentration calculations are obtained from the inhibitor concentration, the basic solution amount, the amount of the unknown inhibitor solution dropped, and the inhibitor dropping amount (0.5 ml) obtained from B1.

【0026】本実施例に示した、基本液量(100ml)、濃
度既知液滴下量(0.05ml)、濃度未知液滴下量(0.5ml)な
どは最適値を求めるため、複数回予備測定を行った。添
加剤種類、既知液の濃度により前記最適値は異なると思
われる。
For the basic liquid volume (100 ml), the liquid droplet volume with a known concentration (0.05 ml), the liquid droplet volume with an unknown concentration (0.5 ml), etc. shown in the present embodiment, preliminary measurements are performed a plurality of times in order to obtain the optimum values. Was. It is considered that the optimum value differs depending on the type of additive and the concentration of the known liquid.

【0027】また、本実施例では抑制剤未知液の滴下を
1回のみ行っているが、濃度既知液滴下時と同様に少量
を複数回滴下する方法もある。
Further, in this embodiment, the dripping of the inhibitor unknown liquid is performed.
Although the method is performed only once, there is also a method in which a small amount is dropped a plurality of times as in the case of dropping a droplet having a known concentration.

【0028】めっき液の添加剤として本実施例で記載し
た、抑制剤以外のめっき促進剤やめっき平坦化剤も同様
の測定方法で測定できる。
As a plating solution additive, a plating accelerator and a plating flattening agent other than the inhibitor described in this embodiment can be measured by the same measuring method.

【0029】めっき促進剤の測定には基本液に抑制剤を
混入した液を使用し、平坦化剤の測定には基本液に抑制
剤と促進剤を混入した液を使用することになる。
For the measurement of the plating accelerator, a liquid in which an inhibitor is mixed in a basic solution is used, and for the measurement of the flattening agent, a liquid in which an inhibitor and an accelerator are mixed in the basic solution is used.

【0030】(実施例2)本実施例を図5、6を用いて
説明する。図5、図6はそれぞれ請求項2の発明である
めっき液の添加剤濃度測定方法を示す工程フロー、構成
図である。本実施例では測定するめっき液の添加剤をめ
っき抑制剤(抑制剤)として、めっき状態をボルタモグ
ラフィのめっき量(単位はmC)として説明する。図6
に示す装置構成としては請求項1の制御部(603)に液温
度補償部を追加していることが異なる点である。制御部
の記録部には、基本液の液温度によりめっき量を補正す
るデータが記憶されており、電流測定ユニット(607)に
より測定された電流データ、即ちめっき量がその液温に
より補正される。本実施例では事前に基本液の温度とめ
っき量の変化を測定している。
(Embodiment 2) This embodiment will be described with reference to FIGS. FIGS. 5 and 6 are a process flow and a configuration diagram showing a method for measuring the concentration of an additive in a plating solution according to the second aspect of the present invention. In this example, the additive of the plating solution to be measured is described as a plating inhibitor (suppressor), and the plating state is described as a plating amount (unit: mC) of voltammography. FIG.
The difference is that the liquid temperature compensating unit is added to the control unit (603) of the first aspect. The recording unit of the control unit stores data for correcting the plating amount based on the solution temperature of the basic solution, and the current data measured by the current measuring unit (607), that is, the plating amount is corrected based on the solution temperature. . In this embodiment, changes in the temperature of the basic solution and the plating amount are measured in advance.

【0031】次に図5による説明をする。請求項1の工
程フローの先頭部分に(a0)基本液温度とめっき量補正デ
ータの入力・記憶工程が追加されている。
Next, a description will be given with reference to FIG. An input / storage step of (a0) basic solution temperature and plating amount correction data is added to the head of the process flow of claim 1.

【0032】めっき量を測定する全ての工程では温度計
(609)により液温度の測定がされ、電極ユニット(605)を
介して制御装置(603)に液温度情報が伝えられる。ま
た、(a)基本液のめっき量測定を除く、めっき量測定を
する全工程で温度補償がなされる。前記の温度補償以外
の工程フロー及び濃度算出方法は請求項1と同じであ
る。
In all the processes for measuring the plating amount, a thermometer is used.
The liquid temperature is measured by (609), and the liquid temperature information is transmitted to the control device (603) via the electrode unit (605). In addition, (a) temperature compensation is performed in all steps of measuring the plating amount except for measuring the plating amount of the basic solution. The process flow and the concentration calculation method other than the temperature compensation are the same as those in the first aspect.

【0033】本実施例も抑制剤未知液の滴下を、少量の
複数回滴下する方法もある。
In this embodiment, there is also a method in which a small amount of the inhibitor unknown liquid is dropped a plurality of times in small amounts.

【0034】めっき液の添加剤として本実施例で記載し
た、抑制剤以外のめっき促進剤やめっき平坦化剤も同様
の測定方法で測定できる。
As a plating solution additive, a plating accelerating agent and a plating flattening agent other than the inhibitor described in this embodiment can be measured by the same measuring method.

【0035】めっき促進剤の測定には基本液に抑制剤を
混入した液を使用し、平坦化剤の測定には基本液に抑制
剤と促進剤を混入した液を使用することになる。
For the measurement of the plating accelerator, a liquid obtained by mixing an inhibitor with a basic liquid is used, and for the measurement of the flattening agent, a liquid obtained by mixing an inhibitor and an accelerator with the basic liquid is used.

【0036】[0036]

【発明の効果】本発明によれば、めっき液の添加剤濃度
を高精度に測定でき、めっき不良が減少する。また優れ
ためっき品質の製品を供給できる。
According to the present invention, the concentration of an additive in a plating solution can be measured with high accuracy, and plating defects are reduced. Also, products with excellent plating quality can be supplied.

【0037】参考として、本発明の請求項1による添加
剤濃度を高精度で測定したデータを図4グラフ(420)に
示す。図4グラフ(420)のデータは、抑制剤濃度既知液
を本発明の測定方法により測定した結果(421)と従来方
法で測定した結果(422)を合わせてプロットした。
For reference, data obtained by measuring the concentration of the additive according to claim 1 of the present invention with high accuracy are shown in FIG. 4 (420). The data of the graph (420) in FIG. 4 are plotted together with the result (421) of the solution with a known inhibitor concentration measured by the measuring method of the present invention and the result (422) measured by the conventional method.

【0038】グラフ(420)の縦軸は測定値と真値との差
(%)={100×(測定値−真値)/真値}、横軸はA1とA0
の比である。プロットされたデータが縦方向に広がるほ
ど、測定値がばらつき、横方向に広がるほどA0に対し
てA1がばらつくことを示す。グラフ(420)の結果で
は、本発明の測定結果(421)がA1をA0に合わせ込む
ことにより、測定値ばらつきを従来方法の−10〜+1
5%の25%幅から−8〜0%の8%幅に改善している
ことを示す。
The vertical axis of the graph (420) represents the difference between the measured value and the true value.
(%) = {100 × (measured value−true value) / true value}, the horizontal axis is A1 and A0
Is the ratio of The more the plotted data spreads in the vertical direction, the more the measured value varies, and the more the data spreads in the horizontal direction, the more A1 varies with respect to A0. In the result of the graph (420), the measurement result (421) of the present invention shows that the measurement value variation is -10 to +1 of the conventional method by adjusting A1 to A0.
It shows improvement from 25% width of 5% to 8% width of -8 to 0%.

【図面の簡単な説明】[Brief description of the drawings]

【図1】請求項1の発明であるめっき液の添加剤濃度測
定方法を示す工程フロー。
FIG. 1 is a process flow showing a method for measuring the concentration of an additive in a plating solution according to the invention of claim 1;

【図2】請求項1の発明であるめっき液の添加剤濃度測
定方法を示す構成図。
FIG. 2 is a configuration diagram showing a method for measuring the concentration of an additive in a plating solution according to the first embodiment of the present invention.

【図3】請求項1の発明であるめっき液の添加剤濃度測
定方法を示すグラフ。
FIG. 3 is a graph showing a method for measuring the concentration of an additive in a plating solution according to the first embodiment.

【図4】従来技術と本発明によるめっき液の添加剤濃度
測定結果を示すグラフ。
FIG. 4 is a graph showing the results of measuring the additive concentration of a plating solution according to the prior art and the present invention.

【図5】請求項2の発明であるめっき液の添加剤濃度測
定方法を示す工程フロー。
FIG. 5 is a process flow showing a method for measuring the concentration of an additive in a plating solution according to the invention of claim 2;

【図6】請求項2の発明であるめっき液の添加剤濃度測
定方法を示す構成図。
FIG. 6 is a block diagram showing a method for measuring the concentration of an additive in a plating solution according to the second embodiment.

【図7】サイクリックボルタモグラフィを説明する構成
図とボルタモグラム。
FIG. 7 is a configuration diagram and a voltammogram for explaining cyclic voltammography.

【図8】従来技術による抑制剤滴下量とめっき量の示す
グラフ。
FIG. 8 is a graph showing the amount of a suppressor dropped and the amount of plating according to a conventional technique.

【符号の説明】[Explanation of symbols]

201 専用ビーカ 202 基本液 203 制御装置 204 電極制御ユニット 205 電極ユニット 206 電位走査ユニット 207 電流測定ユニット 208 滴下ユニット 310 抑制剤濃度既知液滴下量とめっき量変化
のグラフ 311 めっき量A0 320 抑制剤濃度未知液 濃度測定手順を示す
グラフ 321 めっき量A0 322 めっき量A1 323 濃度未知混合液のめっき量B1 324 めっき量調整方向 410 従来技術による添加剤濃度測定結果 420 本発明と従来技術による添加剤濃度測定
結果 421 本発明による添加剤濃度測定結果 422 従来技術による添加剤濃度測定結果 601 専用ビーカ 602 基本液 603 制御装置 604 電極制御ユニット 605 電極ユニット 606 電位走査ユニット 607 電流測定ユニット 608 滴下ユニット 609 温度計 702 基本液 711 作用電極 712 参照電極 713 対極 714 電流及び電圧測定機構 715 電位走査機構 801 めっき量A0 802 検量線 803 めっき量A1 804 未知濃度液混合液のめっき量 805 抑制剤滴下量
201 Dedicated Beaker 202 Basic Solution 203 Controller 204 Electrode Control Unit 205 Electrode Unit 206 Potential Scanning Unit 207 Current Measurement Unit 208 Dropping Unit 310 Suppressor Concentration Known Drop Volume and Change in Plating Amount 311 Plating A0 320 Inhibitor Concentration Unknown Graph showing solution concentration measurement procedure 321 Plating amount A0 322 Plating amount A1 323 Plating amount of unknown concentration mixed solution B1 324 Plating amount adjustment direction 410 Result of additive concentration measurement by prior art 420 Result of additive concentration measurement by present invention and conventional technology 421 Result of additive concentration measurement according to the present invention 422 Result of additive concentration measurement according to the prior art 601 Dedicated beaker 602 Basic solution 603 Controller 604 Electrode control unit 605 Electrode unit 606 Potential scanning unit 607 Current measurement unit G 608 Dropping unit 609 Thermometer 702 Basic solution 711 Working electrode 712 Reference electrode 713 Counter electrode 714 Current and voltage measurement mechanism 715 Potential scanning mechanism 801 Plating amount A0 802 Calibration curve 803 Plating amount A1 804 Plating amount of unknown concentration liquid mixture 805 Suppression Agent dripping amount

Claims (6)

【特許請求の範囲】[Claims] 【請求項1】めっき液中の添加剤濃度を測定する方法の
うち、添加剤の入っていないめっき液(以下、基本
液)のめっき状態を測定する。基本液に測定したい添
加剤濃度既知液を滴下し、前記濃度既知液の混合液(以
下、濃度既知混合液)のめっき状態を測定する。添加
剤濃度既知液の添加量とめっき量の関係を把握する。そ
の後、測定したい添加剤濃度の未知液の測定として新
たな基本液のめっき状態を測定・調整する。前記の
基本液に測定したい添加剤濃度未知液を滴下し、前記濃
度未知液の混合液(以下、濃度未知混合液)のめっき状
態を測定する。前記での検量線を基に、のめっき
状態から滴下した濃度未知液の添加剤量を求め濃度を算
出する。前記からのめっき状態をサイクリックボル
タモグラフィのめっき量あるいはめっき剥離量により測
定する、めっき液の添加剤濃度測定方法において、前記
のめっき量あるいはめっき剥離量に合わせ前記のめ
っき量あるいはめっき剥離量を調整することを特徴とす
る、めっき液の添加剤濃度測定方法
In a method for measuring the concentration of an additive in a plating solution, a plating state of a plating solution containing no additive (hereinafter referred to as a basic solution) is measured. A solution having a known concentration of an additive to be measured is dropped onto the basic solution, and the plating state of a mixture of the solutions having a known concentration (hereinafter, a mixed solution having a known concentration) is measured. Grasp the relationship between the amount of the additive concentration known solution and the plating amount. Then, the plating state of a new basic solution is measured and adjusted as a measurement of an unknown solution of the additive concentration to be measured. A solution of unknown additive concentration to be measured is dropped onto the basic solution, and a plating state of a mixed solution of the unknown concentration solution (hereinafter, a mixed solution of unknown concentration) is measured. Based on the above calibration curve, the amount of the additive of the unknown concentration liquid dropped from the plating state is calculated to calculate the concentration. The plating state from the above is measured by the amount of plating or the amount of plating peeling of cyclic voltammography. Adjusting, method for measuring additive concentration of plating solution
【請求項2】 請求項1記載のめっき液の添加剤濃度測
定装置において、基本液の温度とめっき状態の関係をあ
らかじめ把握し記憶部に記憶し、の基本液温度と、
、の基本液及び混合液の温度に差がある場合は、前
記記憶部の基本液の温度とめっき状態の関係から、
、で測定されためっき状態を補正することを特徴と
する、めっき液の添加剤濃度測定方法。
2. The apparatus for measuring the concentration of an additive in a plating solution according to claim 1, wherein the relationship between the temperature of the basic solution and the plating state is grasped in advance and stored in a storage unit.
If there is a difference between the temperature of the base solution and the temperature of the mixed solution, from the relationship between the temperature of the base solution and the plating state of the storage unit,
A method for measuring the concentration of an additive in a plating solution, wherein the plating state measured in (1) is corrected.
【請求項3】 請求項1又は2記載のめっき液の添加剤
濃度測定方法において、めっき状態をサイクリックボル
タモグラフィのめっき時あるいは剥離時の電流(電荷
量)ピーク値により濃度測定することを特徴とするめっ
き液の添加剤濃度測定方法。
3. The method for measuring the concentration of an additive in a plating solution according to claim 1, wherein the plating state is measured by a peak value of a current (charge amount) at the time of plating or peeling of the cyclic voltammography. Method for measuring the concentration of an additive in a plating solution.
【請求項4】 請求項1記載のめっき液の添加剤濃度測
定方法を行う機構を有することを特徴とする、めっき液
の添加剤濃度測定装置。
4. An apparatus for measuring the concentration of an additive in a plating solution, comprising a mechanism for performing the method for measuring the concentration of an additive in a plating solution according to claim 1.
【請求項5】 請求項2記載のめっき液の添加剤濃度測
定方法を行う機構を有することを特徴とする、めっき液
の添加剤濃度測定装置。
5. An apparatus for measuring the concentration of an additive in a plating solution, comprising a mechanism for performing the method for measuring the concentration of an additive in a plating solution according to claim 2.
【請求項6】 請求項3記載のめっき液の添加剤濃度測
定方法を行う機構を有することを特徴とする、めっき液
の添加剤濃度測定装置。
6. An apparatus for measuring the concentration of an additive in a plating solution, comprising a mechanism for performing the method for measuring the concentration of an additive in a plating solution according to claim 3.
JP2001101311A 2001-03-30 2001-03-30 Concentration measuring method and measuring device for additive for plating liquid Withdrawn JP2002296231A (en)

Priority Applications (1)

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Application Number Priority Date Filing Date Title
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Publication Number Publication Date
JP2002296231A true JP2002296231A (en) 2002-10-09

Family

ID=18954648

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Country Status (1)

Country Link
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014062278A (en) * 2012-09-20 2014-04-10 Sumitomo Electric Ind Ltd Method for quantitatively determining aluminum oxide ion, method for quantitatively determining water content in molten salt, and method for producing aluminum structure

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014062278A (en) * 2012-09-20 2014-04-10 Sumitomo Electric Ind Ltd Method for quantitatively determining aluminum oxide ion, method for quantitatively determining water content in molten salt, and method for producing aluminum structure

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