JP2002290183A - Manufacturing method of saw device - Google Patents

Manufacturing method of saw device

Info

Publication number
JP2002290183A
JP2002290183A JP2001092497A JP2001092497A JP2002290183A JP 2002290183 A JP2002290183 A JP 2002290183A JP 2001092497 A JP2001092497 A JP 2001092497A JP 2001092497 A JP2001092497 A JP 2001092497A JP 2002290183 A JP2002290183 A JP 2002290183A
Authority
JP
Japan
Prior art keywords
piezoelectric substrate
frame
lid
photosensitive resin
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001092497A
Other languages
Japanese (ja)
Inventor
Takafumi Koga
孝文 古賀
Yoko Sakota
洋子 迫田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP2001092497A priority Critical patent/JP2002290183A/en
Publication of JP2002290183A publication Critical patent/JP2002290183A/en
Pending legal-status Critical Current

Links

Landscapes

  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide a method for manufacturing a SAW device which restricts the deformations of a frame or a lid, by developing within a short time. SOLUTION: The method is provided with a first process for forming an IDT 12 and a connection electrode 13 on the front surface of a piezoelectric baseboard 11, a second process for adhering a photosensitive resin film onto the front surface of the piezoelectric baseboard 11, exposing the developing it and forming the frame 14 which encloses the outer peripheral part of the IDT 12; a third process for making the photosensitive resin film readhere onto the front surface of the piezoelectric resin film, exposing the developing it, forming the lid 15 on the frame 14 and covering the IDT 12 by the frame 14 and the lid 15; and a fourth process for arranging a seal resin 18 for covering the outer periphery of the frame 14 and the lid 15. At least a development in the second process or the third process is conducted by injecting developer, while having the piezoelectric baseboard 11 rotated.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は例えば携帯電話など
の無線通信機器に使用されるSAWデバイスの製造方法
に関するものである。
[0001] 1. Field of the Invention [0002] The present invention relates to a method for manufacturing a SAW device used for a wireless communication device such as a cellular phone.

【0002】[0002]

【従来の技術】従来、容器状のパッケージが不要で信頼
性の高いSAWデバイスの製造方法としては、特開平1
0−270975号公報に記載されたものが知られてい
る。
2. Description of the Related Art Conventionally, a method for manufacturing a highly reliable SAW device that does not require a container-shaped package is disclosed in
What is described in 0-270975 is known.

【0003】図13は従来のSAWデバイスの断面図で
あり、1は圧電基板、2aは圧電基板1上に設けたイン
ターディジタルトランスデューサ(以下IDTと称す
る)、2bはIDT2aの接続電極、3は圧電基板1の
上においてIDT2aを囲むように設けた枠体、4は圧
電基板1及び枠体とでIDT2aを密閉するために設け
た蓋体、5は圧電基板1〜蓋体4を備えたSAW素子、
6は接続電極2b上に形成したバンプ、7は回路基板、
8は外部電極、9はSAW素子5の電極形成面全体を被
覆する封止樹脂である。
FIG. 13 is a cross-sectional view of a conventional SAW device, wherein 1 is a piezoelectric substrate, 2a is an interdigital transducer (hereinafter referred to as IDT) provided on the piezoelectric substrate 1, 2b is a connection electrode of the IDT 2a, and 3 is a piezoelectric substrate. A frame 4 provided on the substrate 1 so as to surround the IDT 2a, 4 is a lid provided to seal the IDT 2a with the piezoelectric substrate 1 and the frame, and 5 is a SAW element provided with the piezoelectric substrates 1 to 4 ,
6 is a bump formed on the connection electrode 2b, 7 is a circuit board,
Reference numeral 8 denotes an external electrode, and 9 denotes a sealing resin that covers the entire electrode forming surface of the SAW element 5.

【0004】このSAWデバイスの製造方法について説
明する。まず、大板状の圧電基板1の表面に複数のID
T2a及び接続電極2bを形成する。次にIDT2aの
外周を囲むように感光性樹脂フィルムを用いてフォトリ
ソ法により圧電基板1の上に枠体3を形成する。
A method for manufacturing this SAW device will be described. First, a plurality of IDs are provided on the surface of the large-sized piezoelectric substrate 1.
T2a and the connection electrode 2b are formed. Next, a frame 3 is formed on the piezoelectric substrate 1 by a photolithography method using a photosensitive resin film so as to surround the outer periphery of the IDT 2a.

【0005】次いで枠体3及びIDT2aの上方を覆う
ように感光性樹脂フィルムを用いてフォトリソ法により
蓋体4を形成する。その後圧電基板1を個々のSAW素
子5に切断し、接続電極2bに外部電極8と接続するた
めのバンプ6を形成し、回路基板7の外部電極8と接合
した後、封止樹脂9を充填してSAWデバイスを得る。
Next, a lid 4 is formed by a photolithography method using a photosensitive resin film so as to cover the upper part of the frame 3 and the IDT 2a. After that, the piezoelectric substrate 1 is cut into individual SAW elements 5, bumps 6 for connecting to the external electrodes 8 are formed on the connection electrodes 2 b, and the sealing resin 9 is filled after joining to the external electrodes 8 of the circuit board 7. To obtain a SAW device.

【0006】このSAWデバイスの製造方法において
は、枠体3及び蓋体4の形成工程における現像方法が明
示されていないが、SAWデバイスのような電子部品に
おける感光性樹脂フィルムの現像方法は、図14や図1
5に示すように一般的に二種類ある。
[0006] In this manufacturing method of the SAW device, a developing method in a step of forming the frame 3 and the lid 4 is not specified, but a developing method of a photosensitive resin film in an electronic component such as a SAW device is shown in FIG. 14 and Figure 1
Generally, there are two types as shown in FIG.

【0007】図において、200は現像液、201は第
1支持体、202は第2支持体、203は圧電基板、2
05はベルトコンベア、206は支持体、207は圧電
基板、208はノズル、209は現像液である。
In FIG. 1, reference numeral 200 denotes a developing solution, 201 denotes a first support, 202 denotes a second support, 203 denotes a piezoelectric substrate,
05 is a belt conveyor, 206 is a support, 207 is a piezoelectric substrate, 208 is a nozzle, and 209 is a developer.

【0008】一つ目の方法は図14に示すように、第1
及び第2の支持体201,202で保持した圧電基板2
03を現像液200に浸漬して、上下に誘導させて不要
な感光性樹脂を膨潤、溶解する浸漬上下揺動方式であ
る。
The first method is as shown in FIG.
And the piezoelectric substrate 2 held by the second supports 201 and 202
03 is immersed in a developing solution 200 and guided up and down to swell and dissolve unnecessary photosensitive resin.

【0009】もう一つの方法は図15に示すように、ベ
ルトコンベア205に支持体206を介して設置した圧
電基板207を下方に設けたノズル208から噴射させ
た現像液209中を移動させて不要な感光性樹脂を膨
潤、溶解する上方噴射方式である。
Another method, as shown in FIG. 15, is to move a piezoelectric substrate 207 installed on a belt conveyor 205 via a support body 206 through a developing solution 209 sprayed from a nozzle 208 provided below, thereby making unnecessary. This is an upward injection method that swells and dissolves a photosensitive resin.

【0010】[0010]

【発明が解決しようとする課題】仮にこの二つの方法の
いずれかを上記SAWデバイスの製造方法に適用した場
合、現像に時間がかかるため感光性樹脂フィルムが現像
液と接している時間が長く、感光性樹脂フィルムが膨潤
し、枠体及び蓋体の変形が発生し、SAWデバイスの特
性に悪影響を及ぼすという問題点を有していた。特に蓋
体の変形は著しいものであった。
If any of these two methods is applied to the above-described method for manufacturing a SAW device, the time required for development is long, and the time during which the photosensitive resin film is in contact with the developing solution is long. There has been a problem that the photosensitive resin film swells to deform the frame and the lid, which adversely affects the characteristics of the SAW device. In particular, the deformation of the lid was remarkable.

【0011】そこで本発明は、短時間で現像を行うこと
により枠体及び蓋体の変形を抑制できるSAWデバイス
の製造方法を提供することを目的とするものである。
An object of the present invention is to provide a method of manufacturing a SAW device which can suppress deformation of a frame and a lid by performing development in a short time.

【0012】[0012]

【課題を解決するための手段】上記目的を達成するため
に、以下の構成を有するものである。
Means for Solving the Problems In order to achieve the above object, the present invention has the following arrangement.

【0013】本発明の請求項1に記載の発明は、特に、
感光性樹脂フィルムを用いて形成する枠体あるいは蓋体
の少なくとも一方において、現像は圧電基板を回転させ
ながら現像液を噴射することにより行うものであり、現
像液により膨潤、溶解された感光性樹脂が現像液と共に
圧電基板の回転による遠心力で除去され、常に膨潤、溶
解、除去が繰り返されるので短時間に現像が終了し、枠
体あるいは蓋体の変形を抑制することができる。
[0013] The invention described in claim 1 of the present invention is, in particular,
At least one of the frame and the lid formed using the photosensitive resin film is developed by spraying a developer while rotating the piezoelectric substrate, and the photosensitive resin swelled and dissolved by the developer. Is removed by the centrifugal force caused by the rotation of the piezoelectric substrate together with the developing solution, and swelling, dissolving, and removing are constantly repeated, so that development is completed in a short time, and deformation of the frame or the lid can be suppressed.

【0014】本発明の請求項2に記載の発明は、特に、
現像液の噴射を直線ノズルあるいは扇形ノズルを用いて
行うものであり、現像液を直線状あるいは扇形に噴射す
ることにより、現像液の噴射圧が充円錐ノズル等と比較
すると強くなり、強い噴射圧により膨潤、溶解した感光
性樹脂の除去が十分に行われ、また噴射面積が少ないた
め圧電基板上に堆積する現像液が少なく、噴射圧が十分
に圧電基板にかかるため、現像時間が短くなる上、感光
性樹脂の残渣を低減できる。
[0014] The invention described in claim 2 of the present invention is, in particular,
The injection of the developer is performed using a linear nozzle or a fan-shaped nozzle.By jetting the developer in a linear or fan shape, the injection pressure of the developer becomes stronger compared to a charged conical nozzle, etc. The swelling and dissolving of the photosensitive resin are sufficiently performed, and the developer area deposited on the piezoelectric substrate is small due to the small spray area, and the spray pressure is sufficiently applied to the piezoelectric substrate. And the residue of the photosensitive resin can be reduced.

【0015】本発明の請求項3に記載の発明は、特に、
枠体現像の際現像液の噴射は圧電基板に対し上方垂直方
向から行うものであり、圧電基板の下方から現像液を噴
射する場合と比較すると、圧電基板にかかる適切な噴射
圧を確保した上で圧電基板上で現像液が薄い膜状にな
り、常に感光性樹脂フィルムと接して膨潤、溶解が早く
進行し、短時間で現像を終了することができる。また現
像液の噴射の中心が圧電基板の中心部からずれた場合、
中心部に感光性樹脂の残渣が多く発生することになる
が、現像液を垂直方向から噴射することにより、圧電基
板の中心を狙い易くなり、感光性樹脂の残渣も低減でき
る。
[0015] The invention described in claim 3 of the present invention is, in particular,
During the development of the frame, the developer is sprayed from above and below the piezoelectric substrate in a direction perpendicular to the upper surface of the piezoelectric substrate. As a result, the developer becomes a thin film on the piezoelectric substrate, swells and dissolves constantly in contact with the photosensitive resin film, and the development can be completed in a short time. Also, when the center of the injection of the developer is shifted from the center of the piezoelectric substrate,
Although a large amount of the photosensitive resin residue is generated in the central portion, by spraying the developer from the vertical direction, it becomes easy to aim at the center of the piezoelectric substrate, and the photosensitive resin residue can be reduced.

【0016】本発明の請求項4に記載の発明は、特に、
蓋体現像の際現像液の噴射は圧電基板に対し上方斜め方
向から行うものであり、垂直方向から現像液を噴射した
場合、除去した感光性樹脂が枠体の間に落下し、圧電基
板の表面に密着して感光性樹脂の残渣が多くなる。しか
しながら、斜め方向から噴射することにより、除去した
感光性樹脂は枠体の間に落下すると同時に噴射圧で流さ
れるので感光性樹脂の残渣を低減できる。
The invention described in claim 4 of the present invention particularly provides
When the lid is developed, the developer is sprayed from above and obliquely to the piezoelectric substrate. When the developer is sprayed from the vertical direction, the removed photosensitive resin falls between the frames and the piezoelectric substrate is removed. Adhesion to the surface increases the residue of the photosensitive resin. However, by injecting from an oblique direction, the removed photosensitive resin falls between the frames and flows at the same time as the injection pressure, so that the residue of the photosensitive resin can be reduced.

【0017】本発明の請求項5に記載の発明は、特に、
枠体形成後蓋体形成前に酸素プラズマ中に圧電基板を所
定時間保持する工程を有するものであり、枠体形成によ
り圧電基板上の微少の感光性樹脂の残渣の有機分を灰化
し除去することにより、外部回路との電気的接続をとる
ためのバンプ等を接続電極上に形成する際、接続電極と
十分な接続強度を有するものが形成できる。またIDT
の上に感光性樹脂の残渣が存在すると弾性表面波の伝搬
損失が増加するが、酸素プラズマで除去されるので伝搬
損失の増加も防止できる。
[0017] The invention described in claim 5 of the present invention particularly provides
The method includes a step of holding the piezoelectric substrate in oxygen plasma for a predetermined time after the frame is formed and before the lid is formed, and the frame is formed to incinerate and remove the organic components of the small photosensitive resin residue on the piezoelectric substrate. With this, when bumps or the like for making electrical connection with an external circuit are formed on the connection electrode, a bump having sufficient connection strength with the connection electrode can be formed. Also IDT
When a residue of the photosensitive resin is present on the surface, the propagation loss of the surface acoustic wave increases. However, since the surface acoustic wave is removed by oxygen plasma, the propagation loss can be prevented.

【0018】本発明の請求項6に記載の発明は、特に、
蓋体形成後カバー形成前に酸素プラズマ中に圧電基板を
所定時間保持する工程を有するものであり、蓋体形成に
より圧電基板上の微少の感光性樹脂の残渣のうち有機分
を灰化し除去することにより、外部回路との電気的接続
をとるためのバンプ等を接続電極上に形成する際、接続
電極と十分な接続強度を有するものが形成できる。
[0018] The invention described in claim 6 of the present invention is, in particular,
The method includes a step of holding the piezoelectric substrate in oxygen plasma for a predetermined time after the lid is formed and before the cover is formed. By forming the lid, the organic component of the small photosensitive resin residue on the piezoelectric substrate is ashed and removed. With this, when bumps or the like for making electrical connection with an external circuit are formed on the connection electrode, a bump having sufficient connection strength with the connection electrode can be formed.

【0019】本発明の請求項7に記載の発明は、特に、
蓋体形成後圧電基板を熱処理してから酸素プラズマ中に
保持後するものであり、熱処理により蓋体の完全硬化と
強度の向上を図り、酸素プラズマ中保持工程での減圧お
よび取出し時常圧に戻す時の増圧に耐え蓋体の変形、特
に圧電基板上のIDTとの接触を防止することができ
る。
The invention described in claim 7 of the present invention particularly provides
After the lid is formed, the piezoelectric substrate is heat-treated and then held in oxygen plasma, and after the heat treatment, the lid is completely hardened and the strength is improved, and the pressure is reduced in the oxygen plasma holding step and returned to normal pressure during removal. The deformation of the lid body, especially the contact with the IDT on the piezoelectric substrate, can be prevented.

【0020】本発明の請求項8に記載の発明は、特に、
蓋体形成後熱処理前に圧電基板に紫外線を照射するもの
であり、熱処理時に蓋体が軟化して圧電基板上のIDT
に接触するのを抑制することができる。
The invention according to claim 8 of the present invention particularly provides
After the lid is formed, the piezoelectric substrate is irradiated with ultraviolet rays before the heat treatment.
Can be suppressed.

【0021】本発明の請求項9に記載の発明は、特に、
蓋体を形成し圧電基板を酸素プラズマ中に所定時間保持
した後、徐々に常圧まで増圧を行うものであり、圧電基
板、枠体及び蓋体で形成される空間内外に急激な圧力差
が生じ、蓋体がIDTと接触するのを抑制することがで
きる。
The invention as defined in claim 9 of the present invention particularly provides
After the lid is formed and the piezoelectric substrate is held in the oxygen plasma for a predetermined time, the pressure is gradually increased to normal pressure, and a sudden pressure difference is generated between the inside and outside of the space formed by the piezoelectric substrate, the frame, and the lid. Is generated, and contact of the lid with the IDT can be suppressed.

【0022】[0022]

【発明の実施の形態】(実施の形態1)以下、本発明の
実施の形態1を用いて、本発明の特に請求項1〜9に記
載の発明について説明する。
DESCRIPTION OF THE PREFERRED EMBODIMENTS (Embodiment 1) Hereinafter, the first embodiment of the present invention will be described, particularly the inventions described in claims 1 to 9.

【0023】図1は本発明の実施の形態1におけるSA
Wデバイスの断面図である。
FIG. 1 shows an SA according to the first embodiment of the present invention.
It is sectional drawing of a W device.

【0024】図において、11はニオブ酸リチウム、タ
ンタル酸リチウムなどからなる圧電基板、12は圧電基
板11の上に設けたアルミニウムあるいはアルミニウム
合金のIDT、13はIDT12に接続した接続電極、
14は感光性モノマー(アクリル系モノマー等)を主成
分とする感光性樹脂フィルムを用いて圧電基板11の上
においてIDT12の外周部を囲むように設けた枠体、
15は同様の感光性樹脂フィルムを用いて枠体14及び
弾性表面波が伝搬する部分(IDT12)の上方空間を
覆うように設けた蓋体、16は圧電基板11、IDT1
2、接続電極13、枠体14、蓋体15を備えたSAW
素子、17は接続電極13と基板の外部電極と接続する
ために金などで形成したバンプ、18はSAW素子16
の外周部を被覆する封止樹脂、19はSAWデバイスを
実装する回路基板、20は回路基板19に形成した外部
電極である。
In the figure, 11 is a piezoelectric substrate made of lithium niobate, lithium tantalate, or the like, 12 is an aluminum or aluminum alloy IDT provided on the piezoelectric substrate 11, 13 is a connection electrode connected to the IDT 12,
Reference numeral 14 denotes a frame provided around the outer peripheral portion of the IDT 12 on the piezoelectric substrate 11 using a photosensitive resin film containing a photosensitive monomer (acrylic monomer or the like) as a main component;
Reference numeral 15 denotes a lid provided using the same photosensitive resin film so as to cover the space above the frame 14 and the portion (IDT 12) where the surface acoustic wave propagates, and 16 denotes the piezoelectric substrate 11, IDT1.
2. SAW provided with connection electrode 13, frame 14, and lid 15
Element 17 is a bump formed of gold or the like for connecting the connection electrode 13 to an external electrode of the substrate, and 18 is a SAW element 16
, A sealing substrate for mounting the SAW device, and 20 an external electrode formed on the circuit board 19.

【0025】以上のように構成されたSAWデバイスの
製造方法を図面を参照しながら説明する。
A method for manufacturing the SAW device configured as described above will be described with reference to the drawings.

【0026】図2は本発明の実施の形態1におけるSA
Wデバイスの製造工程図である。
FIG. 2 shows SA in Embodiment 1 of the present invention.
It is a manufacturing process figure of a W device.

【0027】図3は本発明の実施の形態1における枠体
14の形成工程を説明するための側面図、図4は同上面
図、図5は本発明の実施の形態1における蓋体15の形
成工程を説明するための側面図、図6は同上面図、図7
は図5の要部拡大側面図である。
FIG. 3 is a side view for explaining a step of forming the frame body 14 according to the first embodiment of the present invention, FIG. 4 is a top view of the same, and FIG. FIG. 6 is a side view for explaining the forming process, FIG.
FIG. 6 is an enlarged side view of a main part of FIG. 5.

【0028】図において、21はテーブル、11はテー
ブル21の上に載置した圧電基板、22は直線ノズル、
23は現像液、24は感光性樹脂フィルムの露光部、2
5は同未露光部である。
In the drawing, reference numeral 21 denotes a table, 11 denotes a piezoelectric substrate mounted on the table 21, 22 denotes a straight nozzle,
23 is a developer, 24 is an exposed portion of a photosensitive resin film, 2
Reference numeral 5 denotes the unexposed portion.

【0029】まず図2の100に示すように大板状の圧
電基板11の表面にアルミニウムあるいはアルミニウム
合金を用いて少なくともIDT12及びこれに接続した
接続電極13を形成する。
First, as shown at 100 in FIG. 2, at least an IDT 12 and a connection electrode 13 connected thereto are formed on the surface of a large-sized piezoelectric substrate 11 using aluminum or an aluminum alloy.

【0030】次に、図2の101aに示すようにこの圧
電基板11のSAW素子16となる部分の表面全体に感
光性樹脂フィルムをラミネートさせる。感光性樹脂フィ
ルムは、感光性モノマー(アクリル系モノマー等)を主
成分とし、耐熱性を向上させるために熱硬化性モノマー
(エポキシ樹脂等)や強度を向上させるためにフィラー
(タルクや水酸化アルミニウム等)等を含有したもので
ある。
Next, as shown by 101a in FIG. 2, a photosensitive resin film is laminated on the entire surface of the portion of the piezoelectric substrate 11 which will become the SAW element 16. The photosensitive resin film is mainly composed of a photosensitive monomer (such as an acrylic monomer), a thermosetting monomer (such as an epoxy resin) for improving heat resistance, and a filler (for example, talc or aluminum hydroxide) for improving strength. Etc.).

【0031】次いで図2の101b、101cに示すよ
うに感光性樹脂フィルムを所定パターンマスクを用いて
露光後、現像する。
Next, as shown by 101b and 101c in FIG. 2, the photosensitive resin film is exposed and developed using a predetermined pattern mask.

【0032】図2の101cに示すように現像工程につ
いて詳しく説明する。図3、図4に示すように圧電基板
11の裏面をテーブル21の上に真空吸着等で固定し、
テーブル21を回転させながら上方にある直線ノズル2
2から圧電基板11の中心部に照準を合わせて垂直に現
像液23を一定時間噴射する。現像液23が接触するこ
とにより感光性樹脂フィルムの不要部分が膨潤、溶解
し、噴射圧により除去される。現像時のテーブル21の
回転数は不要な現像液23及び膨潤、溶解させた感光性
樹脂を遠心力で除去するため速い方が良く、100〜1
000r/minが望ましい。また同様に噴射の液圧も
2×105Pa以上とすることが望ましい。
The developing step will be described in detail as shown at 101c in FIG. As shown in FIGS. 3 and 4, the back surface of the piezoelectric substrate 11 is fixed on the table 21 by vacuum suction or the like.
The straight nozzle 2 above while rotating the table 21
From 2, the developer 23 is ejected vertically for a predetermined time while aiming at the center of the piezoelectric substrate 11. The unnecessary portion of the photosensitive resin film swells and dissolves when the developer 23 comes into contact, and is removed by the jet pressure. The number of rotations of the table 21 during development is preferably as fast as possible to remove unnecessary developer 23 and swelled and dissolved photosensitive resin by centrifugal force.
000r / min is desirable. Similarly, it is desirable that the liquid pressure of the injection be 2 × 10 5 Pa or more.

【0033】現像後、図2の101に示すように圧電基
板11を水洗し、水切り後、乾燥して枠体14を得る。
After the development, as shown at 101 in FIG. 2, the piezoelectric substrate 11 is washed with water, drained and dried to obtain a frame 14.

【0034】次に、図2の102に示すように枠体14
の形成後、圧電基板11の表面に感光性樹脂の残渣があ
る場合は、次の工程を行うとよい。つまり圧電基板11
を酸素プラズマ中に一定時間保持、すなわち酸素プラズ
マアッシングして、感光性樹脂の残渣を灰化させる。感
光性樹脂の成分は無機物であるフィラー分を除き、炭素
と水素が主成分であり、酸素との反応により炭酸ガスと
水蒸気となり灰化され除去される。この時酸素プラズマ
中での保持は酸素ガス圧133Pa程度、高周波出力5
0〜200Wで2〜10分程度行う。高周波出力を高
く、また保持時間を長くすると枠体14そのものの表面
もかなり灰化し、次に形成する蓋体15との密着性が悪
化する。また、高周波出力が弱く、保持時間が短いと残
渣の灰化が不十分となるため前記条件が望ましい。また
無機物であるフィラーは残存することになるが、元来感
光性樹脂フィルムに含有されている量が少なく、堅い上
に細かいため例え残存しても後工程であるバンプの形成
に悪影響を及ぼさない。
Next, as shown at 102 in FIG.
If there is a residue of the photosensitive resin on the surface of the piezoelectric substrate 11 after the formation, the following steps may be performed. That is, the piezoelectric substrate 11
Is kept in oxygen plasma for a certain period of time, that is, oxygen plasma ashing is performed to ash the residue of the photosensitive resin. The components of the photosensitive resin are mainly composed of carbon and hydrogen, except for the filler, which is an inorganic substance, and are converted to carbon dioxide and water vapor by the reaction with oxygen, and are ashed and removed. At this time, the oxygen plasma was maintained in an oxygen plasma pressure of about 133 Pa and a high frequency output of 5
This is performed at 0 to 200 W for about 2 to 10 minutes. If the high-frequency output is increased and the holding time is increased, the surface of the frame 14 itself is considerably ashed, and the adhesion to the lid 15 to be formed next is deteriorated. Further, if the high-frequency output is weak and the holding time is short, the ashing of the residue becomes insufficient. In addition, although the filler which is an inorganic substance will remain, the amount originally contained in the photosensitive resin film is small, and even if it remains fine, it does not adversely affect the formation of the bump which is a post-process even if it remains fine. .

【0035】次に、図2の103aに示すように枠体1
4の上に蓋体15となる感光性樹脂フィルムを密着させ
る。この時図11に示すように、感光性樹脂フィルムは
枠体14の上面のみに密着し、圧電基板11及びIDT
12、接続電極13とは接触しないようにする。
Next, as shown at 103a in FIG.
A photosensitive resin film serving as a lid 15 is adhered onto the cover 4. At this time, as shown in FIG. 11, the photosensitive resin film adheres only to the upper surface of the frame 14, and the piezoelectric substrate 11 and the IDT
12. Avoid contact with the connection electrode 13.

【0036】その後、図2の103bに示すように枠体
14の形成時と同様にして露光および図2の103cに
示すように現像するのであるが、現像時の直線ノズル2
2の位置を変える。つまり、枠体14を形成する時の現
像は、図3に示すように圧電基板11に対して垂直方向
から現像液23が噴射される位置に直線ノズル22を設
置したが、蓋体15を形成する時の現像は、図5に示す
ように直線ノズル22を圧電基板11に対して傾斜させ
て設置し、斜め方向から圧電基板11の中心部に照準を
合わせて、図6に示すように現像液23を噴射する。斜
めからの噴射により、図7に示すように除去されるべき
未露光部25の感光性樹脂が枠体14間に落下し、圧電
基板11に密着することなく現像液23により押し流さ
れて除去されるため、感光性樹脂の残渣を低減すること
ができる。
Thereafter, exposure and development are carried out in the same manner as in the formation of the frame 14 as shown at 103b in FIG. 2 and development is carried out as shown at 103c in FIG.
Change the position of 2. In other words, for the development when forming the frame 14, the linear nozzle 22 is installed at a position where the developer 23 is jetted from the vertical direction to the piezoelectric substrate 11 as shown in FIG. When developing, as shown in FIG. 5, the linear nozzle 22 is installed so as to be inclined with respect to the piezoelectric substrate 11, and the center of the piezoelectric substrate 11 is aimed obliquely from the oblique direction. The liquid 23 is injected. As shown in FIG. 7, the photosensitive resin of the unexposed portion 25 to be removed falls between the frames 14 due to the oblique injection, and is removed by being washed away by the developing solution 23 without adhering to the piezoelectric substrate 11. Therefore, the residue of the photosensitive resin can be reduced.

【0037】この場合直線ノズル22は圧電基板11の
垂直面に対して5〜45°、好ましくは20°程度傾斜
させることが望ましい。直線ノズル22の傾斜角度が小
さいと枠体14間に落下した感光性樹脂の除去効果が少
なく、また大き過ぎると圧電基板11の中心部への照準
を合わせて現像液23を噴射させることが困難となり、
逆に圧電基板11中央部に感光性樹脂の残渣が発生しや
すくなる。また、この時も枠体14の現像時と同様、テ
ーブル21の回転は、100〜1000r/minで、
噴射の液圧も2×105Pa以上とすることが望まし
い。
In this case, it is desirable that the straight nozzle 22 is inclined at 5 to 45 °, preferably about 20 ° with respect to the vertical plane of the piezoelectric substrate 11. If the inclination angle of the straight nozzle 22 is small, the effect of removing the photosensitive resin dropped between the frame bodies 14 is small. If the inclination angle is too large, it is difficult to aim the central portion of the piezoelectric substrate 11 to eject the developer 23. Becomes
Conversely, a photosensitive resin residue is likely to be generated at the center of the piezoelectric substrate 11. Also, at this time, similarly to the development of the frame 14, the rotation of the table 21 is 100 to 1000 r / min.
It is desirable that the hydraulic pressure of the injection be 2 × 10 5 Pa or more.

【0038】現像後、図2の103に示すように圧電基
板11を水洗し、水切り後、乾燥して蓋体15を得る。
After the development, as shown at 103 in FIG. 2, the piezoelectric substrate 11 is washed with water, drained, and dried to obtain the lid 15.

【0039】次に、図2の104に示すように圧電基板
11に紫外線を照射し、枠体14及び蓋体15を硬化し
た後、図2の105に示すように150〜200℃で3
0分〜2時間熱処理する。
Next, as shown at 104 in FIG. 2, the piezoelectric substrate 11 is irradiated with ultraviolet rays to cure the frame 14 and the lid 15, and then, as shown at 105 in FIG.
Heat treatment for 0 minute to 2 hours.

【0040】さらに蓋体15の形成工程で感光性樹脂の
残渣が発生した場合、枠体14と同様に酸素プラズマ中
に一定時間放置し、感光性樹脂の残渣を灰化させて図2
の106に示す酸素プラズマアッシングを行う。この酸
素プラズマ中での保持も上述したような理由により、酸
素ガス圧133Pa程度、高周波出力50〜200Wで
2〜10分程度行う。
Further, when a photosensitive resin residue is generated in the step of forming the lid 15, the photosensitive resin residue is left in an oxygen plasma for a certain period of time as in the case of the frame 14, and the photosensitive resin residue is ashed.
The oxygen plasma ashing indicated by 106 is performed. The holding in the oxygen plasma is also performed at an oxygen gas pressure of about 133 Pa and a high frequency output of 50 to 200 W for about 2 to 10 minutes for the above-described reason.

【0041】以上の工程によりSAW素子16を得る。The SAW element 16 is obtained through the above steps.

【0042】次に図2の107に示すようにSAW素子
16の接続電極13の上にバンプ17を形成し、回路基
板19に設けた外部電極20とバンプ17を介してSA
W素子16が電気的に接続されるようバンプを外部電極
20に接合して図2の108に示すように実施する。こ
の時バンプ17の高さの方が、枠体14と蓋体15の高
さを合せたものよりも高いので蓋体15と回路基板19
との間には空間が生じる。
Next, as shown at 107 in FIG. 2, a bump 17 is formed on the connection electrode 13 of the SAW element 16, and the SA is connected to the external electrode 20 provided on the circuit board 19 via the bump 17.
The bump is bonded to the external electrode 20 so that the W element 16 is electrically connected, and the process is performed as shown by 108 in FIG. At this time, since the height of the bumps 17 is higher than the height of the frame 14 and the height of the lid 15 combined, the height of the
There is a space between.

【0043】次に図1に示すようにこの空間内及びSA
W素子16の電極を形成した表面全体及びバンプ17の
外周部をエポキシ樹脂などの封止樹脂18で被覆して図
2の109に示す樹脂封止を施しSAWデバイスを得
る。
Next, as shown in FIG.
The entire surface on which the electrodes of the W element 16 are formed and the outer periphery of the bump 17 are covered with a sealing resin 18 such as an epoxy resin, and the resin is sealed as shown at 109 in FIG. 2 to obtain a SAW device.

【0044】以上のように構成されたSAWデバイスの
特性について説明する。
The characteristics of the SAW device configured as described above will be described.

【0045】図8は本発明の他の実施の形態における枠
体14の形成工程を説明するための側面図、図9は同上
面図、図10は比較例における枠体の形成工程を説明す
るための側面図、図11は同上面図であり、図3、図4
と同様の構成要素には同番号を付して説明を省略する。
図において、31は扇形ノズル、32は充円錐ノズルで
ある。
FIG. 8 is a side view for explaining a step of forming a frame 14 in another embodiment of the present invention, FIG. 9 is a top view of the same, and FIG. 10 is a view for explaining a step of forming a frame in a comparative example. FIG. 11 is a top view of FIG.
The same components as those described above are denoted by the same reference numerals, and description thereof is omitted.
In the figure, 31 is a fan-shaped nozzle, and 32 is a full-cone nozzle.

【0046】枠体14及び蓋体15の変形が著しいと、
弾性表面波の励震空間を確保することが難しく、SAW
デバイスの特性を劣化させてしまう恐れが有る。枠体1
4及び蓋体15の変形は上述したように、現像時間が長
いことによっても発生する。
If the frame 14 and the lid 15 are significantly deformed,
It is difficult to secure the excitation space for surface acoustic waves.
There is a possibility that the characteristics of the device may be degraded. Frame 1
As described above, the deformation of the cover 4 and the cover 15 is also caused by a long development time.

【0047】そこで本実施の形態1で行った現像方式
(以下テーブル回転方式とする)と従来の現像方式との
現像時間の比較、及び本実施の形態1で行った現像方式
において異なる形状のノズルを用いた場合の現像時間の
比較を行った。
Therefore, a comparison of the developing time between the developing method (hereinafter, referred to as a table rotation method) performed in the first embodiment and the conventional developing method, and a nozzle having a different shape in the developing method performed in the first embodiment. Was used to compare the development time.

【0048】その結果を(表1)に示す。The results are shown in (Table 1).

【0049】[0049]

【表1】 [Table 1]

【0050】この(表1)を見るとわかるように、従来
の現像方法つまり浸漬上下揺動方式及び上方噴射方式で
現像を行った場合は、枠体14及び蓋体15のいずれの
場合も、本実施の形態1で示したようなテーブル回転方
式の方が現像時間が短い。
As can be seen from Table 1, when the development is performed by the conventional developing method, that is, by the immersion vertical swinging method and the upward jetting method, in any case of the frame 14 and the lid 15, The table rotation method as described in the first embodiment has a shorter development time.

【0051】またテーブル回転方式においても、図8か
ら図11に示すように扇形ノズル31や充円錐ノズル3
2を用いた場合と比較すると、上記実施の形態1で示し
たように直線ノズル22を用いて行った場合がもっとも
現像時間は短く、変形や膨潤が発生し難い。
Also, in the table rotation method, as shown in FIGS.
As compared with the case of using No. 2, the development time is the shortest when the straight nozzle 22 is used as shown in the first embodiment, and deformation and swelling hardly occur.

【0052】しかしながら、扇形ノズル31を用いた場
合でも、枠体14及び蓋体15の変形は求められず、上
記実施の形態1において直線ノズル22に変えて扇形ノ
ズル31を用いたとしても同様の効果が得られることが
わかる。
However, even when the fan-shaped nozzle 31 is used, no deformation of the frame 14 and the lid 15 is required, and the same applies to the case where the fan-shaped nozzle 31 is used instead of the straight nozzle 22 in the first embodiment. It can be seen that the effect can be obtained.

【0053】直線ノズル22及び扇形ノズル31は、現
像液の噴射圧が充円錐ノズル32など他のノズルと比較
すると強く、この強い噴射圧により膨潤、溶解した感光
性樹脂の除去を十分に行うことができる。また噴射面積
が少ないため現像液の圧電基板11での堆積量が少な
く、噴射圧が十分に圧電基板11にかかるため噴射によ
る除去が効果的に行うことができる。
The linear nozzle 22 and the fan-shaped nozzle 31 have a higher injection pressure of the developing solution than other nozzles such as the conical nozzle 32, and the strong injection pressure sufficiently removes the swelled and dissolved photosensitive resin. Can be. Further, since the ejection area is small, the amount of the developer deposited on the piezoelectric substrate 11 is small, and the ejection pressure is sufficiently applied to the piezoelectric substrate 11, whereby the removal by the ejection can be effectively performed.

【0054】従来の浸漬上下揺動方式や上方噴射方式の
場合、圧電基板の回転遠心力による除去の効果がなくま
た、噴射圧による除去効果も弱いため、現像時間が長く
なり、蓋体15の変形や膨潤が発生する。特に枠体14
及び蓋体15が微細な形状の時ほど顕著になる。
In the case of the conventional immersion vertical swinging method or the upward spraying method, there is no effect of removing the piezoelectric substrate by the rotational centrifugal force, and the removing effect by the spray pressure is weak. Deformation and swelling occur. Especially the frame 14
And it becomes remarkable when the lid 15 has a fine shape.

【0055】さらに従来の一般的な現像方法においては
感光性樹脂の残渣が多く、バンプ17と接続電極13と
の接続強度が弱くかつばらつきが大きい。しかしながら
本実施の形態1の現像方法により、感光性樹脂の残渣は
従来と比較すると非常に少ない。
Further, in the conventional general developing method, the residue of the photosensitive resin is large, and the connection strength between the bump 17 and the connection electrode 13 is weak and the dispersion is large. However, according to the developing method of the first embodiment, the residue of the photosensitive resin is very small as compared with the conventional method.

【0056】以上のように本実施の形態1においては、
枠体14及び蓋体15の少なくとも一方の現像時(図2
の101c、103c)に、圧電基板11を回転させな
がら現像液を噴出することにより、現像液により膨潤、
溶解された感光性樹脂が現像液と共に圧電基板11の回
転による遠心力で除去され、常に膨潤、溶解、除去が繰
り返されるので短時間に現像が終了し、枠体14あるい
は蓋体15の変形を抑制することができる。特に膨潤、
変形しやすい蓋体15においては効果が顕著になる。
As described above, in the first embodiment,
At the time of developing at least one of the frame 14 and the lid 15 (FIG. 2)
101c, 103c), by spraying the developer while rotating the piezoelectric substrate 11, swelling with the developer,
The dissolved photosensitive resin is removed together with the developer by centrifugal force due to the rotation of the piezoelectric substrate 11, and the swelling, dissolving, and removing are constantly repeated, so that the development is completed in a short time, and the deformation of the frame 14 or the cover 15 Can be suppressed. Especially swelling,
The effect is remarkable in the lid 15 that is easily deformed.

【0057】また、現像液の噴射は直線ノズル22ある
いは扇形ノズル31を用いて行うことにより、強い噴射
圧で膨潤、溶解した感光性樹脂の除去が十分に行われ、
また噴射面積が少ないため圧電基板11上に堆積する現
像液が少なく、噴射圧が十分に圧電基板11にかかるた
め、現像時間が短くなる上、感光性樹脂の残渣を低減で
きる。
Further, by injecting the developing solution using the linear nozzle 22 or the fan-shaped nozzle 31, the swelling and dissolved photosensitive resin can be sufficiently removed by the strong injection pressure,
Further, since the injection area is small, a small amount of the developer is deposited on the piezoelectric substrate 11, and the injection pressure is sufficiently applied to the piezoelectric substrate 11, so that the development time is shortened and the residue of the photosensitive resin can be reduced.

【0058】さらに、枠体14の現像の際(図2の10
1c)、現像液の噴射は圧電基板11に対し上方垂直方
向から行うものであり、圧電基板11にかかる適切な噴
射圧を確保した上で圧電基板11上で現像液が薄い膜状
になり常に感光性樹脂フィルムと接して膨潤、溶解が早
く進行し、短時間で現像を終了することができる。また
現像液の噴射は、圧電基板の中心部に照準を合わせ易い
ので感光性樹脂の残渣も低減できる。
Further, when the frame 14 is developed (see FIG.
1c) The spraying of the developing solution is performed vertically upward with respect to the piezoelectric substrate 11, and the developing solution becomes a thin film on the piezoelectric substrate 11 after an appropriate spraying pressure applied to the piezoelectric substrate 11 is secured. In contact with the photosensitive resin film, swelling and dissolution proceed quickly, and development can be completed in a short time. In addition, since the developer is easily sprayed on the center of the piezoelectric substrate, the residue of the photosensitive resin can be reduced.

【0059】さらにまた、蓋体15の現像の際(図2の
103c)、現像液の噴射を圧電基板11に対し上方斜
め方向から行うことにより、除去した感光性樹脂は枠体
14の間に落下すると同時に噴射圧で流されるので感光
性樹脂の残渣を低減できる。
Further, at the time of developing the lid 15 (103 c in FIG. 2), the photosensitive resin removed by the spraying of the developing solution from above and obliquely to the piezoelectric substrate 11 is held between the frame 14. Since the resin is dropped and jetted at the same time as the jetting pressure, residues of the photosensitive resin can be reduced.

【0060】その上、枠体14の形成後蓋体15の形成
前に酸素プラズマ中に圧電基板11を所定時間保持する
ことにより(図2の102)、枠体14の形成により圧
電基板11上に存在する感光性樹脂の残渣の有機分を灰
化し、除去し、接続電極13と十分な接続強度を有する
バンプ17を形成することができる。またIDT12の
上に感光性樹脂の残渣を除去することにより、伝搬損失
の増加も防止できる。
In addition, after the frame 14 is formed and before the lid 15 is formed, the piezoelectric substrate 11 is held in oxygen plasma for a predetermined time (102 in FIG. 2), so that the frame 14 is formed. The organic component of the residue of the photosensitive resin existing in the substrate is ashed and removed, and the bump 17 having sufficient connection strength with the connection electrode 13 can be formed. Further, by removing the residue of the photosensitive resin on the IDT 12, an increase in propagation loss can be prevented.

【0061】さらに蓋体15の形成後、バンプ17の形
成前に(図2の106)酸素プラズマ中に圧電基板11
を所定時間保持することにより、蓋体15の形成により
圧電基板11上に存在する感光性樹脂の残渣の有機分を
灰化し、除去し、接続電極13と十分な接続強度を有す
るバンプ17を形成することができる。
Further, after the lid 15 is formed and before the bump 17 is formed (106 in FIG. 2), the piezoelectric substrate 11 is exposed to oxygen plasma.
Is held for a predetermined time, the organic matter of the residue of the photosensitive resin present on the piezoelectric substrate 11 is ashed and removed by forming the lid 15, and the bump 17 having sufficient connection strength with the connection electrode 13 is formed. can do.

【0062】また蓋体15の形成後、圧電基板11を熱
処理することにより(図2の105)、蓋体15の完全
硬化と強度の向上を図り、酸素プラズマ中保持工程(図
2の106)での減圧および取出し時常圧に戻す時の増
圧に耐え、蓋体15の変形、特に圧電基板11上のID
T12との接触を防止することができる。
After the lid 15 is formed, the piezoelectric substrate 11 is subjected to a heat treatment (105 in FIG. 2) to complete the curing of the lid 15 and to improve the strength, and a step of holding in oxygen plasma (106 in FIG. 2). In the cover 15, especially the ID on the piezoelectric substrate 11.
Contact with T12 can be prevented.

【0063】さらに、蓋体15の形成後圧電基板11に
紫外線を照射することにより(図2の104)、蓋体1
5が硬化し、熱処理時に軟化して圧電基板11上のID
T12に接触するのを抑制することができる。
Further, after the lid 15 is formed, the piezoelectric substrate 11 is irradiated with ultraviolet rays (104 in FIG. 2), whereby the lid 1
5 is hardened and softened during the heat treatment, and the ID on the piezoelectric substrate 11 is
Contact with T12 can be suppressed.

【0064】さらにまた、圧電基板11を酸素プラズマ
中に所定時間保持(図2の106)後、徐々に常圧まで
増圧を行うものであり、圧電基板11、枠体14及び蓋
体15で形成される空間内外に急激な圧力差が生じ、蓋
体15がIDT12と接触するのを抑制することができ
る。
Further, after the piezoelectric substrate 11 is held in the oxygen plasma for a predetermined time (106 in FIG. 2), the pressure is gradually increased to normal pressure, and the piezoelectric substrate 11, the frame 14 and the cover 15 It is possible to suppress a sudden pressure difference between the inside and outside of the formed space and the contact of the lid 15 with the IDT 12.

【0065】なお上記実施の形態1においては、SAW
素子16をバンプ17を介して回路基板19に実装後、
封止樹脂18でSAW素子16と回路基板19との空間
及びバンプ17の外周部を被覆したが、この部分だけで
なくSAW素子16全体を覆うように封止樹脂18を設
けても構わない。また封止樹脂18の変わりにSAW素
子16全体を覆うような金属キャップなどを設けても同
様の効果が得られる。さらに封止樹脂18に代えて容器
状のパッケージ内に封止しても構わない。
In the first embodiment, the SAW
After mounting the element 16 on the circuit board 19 via the bump 17,
Although the space between the SAW element 16 and the circuit board 19 and the outer periphery of the bump 17 are covered with the sealing resin 18, the sealing resin 18 may be provided so as to cover not only this part but also the entire SAW element 16. Similar effects can be obtained by providing a metal cap or the like that covers the entire SAW element 16 instead of the sealing resin 18. Further, it may be sealed in a container-shaped package instead of the sealing resin 18.

【0066】(実施の形態2)以下、本実施の形態2を
用いて本発明の特に請求項1〜9に記載の発明について
説明する。図12は本実施の形態2におけるSAWデバ
イスの断面図である。図1と同様の構成要素については
同番号を付して説明を省略する。
(Embodiment 2) Hereinafter, the second embodiment of the present invention will be described in particular with reference to claims 1 to 9. FIG. 12 is a sectional view of the SAW device according to the second embodiment. The same components as those in FIG. 1 are denoted by the same reference numerals and description thereof is omitted.

【0067】図12において40はSAW素子16を回
路基板19上に固定するためのシリコンなどの樹脂、4
1は接続電極13と外部電極20とを電気的に接続する
ための金やアルミニウムなどのワイヤである。
In FIG. 12, reference numeral 40 denotes a resin such as silicon for fixing the SAW element 16 on the circuit board 19;
Reference numeral 1 denotes a wire such as gold or aluminum for electrically connecting the connection electrode 13 and the external electrode 20.

【0068】実施の形態1との相違点は、SAW素子1
6の回路基板17への実装をバンプを用いて行う代わり
にワイヤ41を用いて行う点、及びSAW素子16の実
装向きが上下反対になるので、SAW素子16及びワイ
ヤ全体を封止樹脂18で被覆する点である。
The difference from the first embodiment is that the SAW element 1
6 is performed using the wires 41 instead of using the bumps, and the mounting direction of the SAW element 16 is upside down. Therefore, the SAW element 16 and the entire wire are sealed with the sealing resin 18. The point to be covered.

【0069】以上のように構成されたSAWデバイスの
製造方法について説明する。
A method for manufacturing the SAW device configured as described above will be described.

【0070】まず、実施の形態1と同様にして枠体14
及び蓋体15を有するSAW素子16を作製する(図2
の100〜106)。
First, similarly to the first embodiment, the frame 14
And a SAW element 16 having a lid 15 (FIG. 2).
100-106).

【0071】次に回路基板19の上に樹脂40でSAW
素子16を固定する。次いで、接続電極13と外部電極
20とをワイヤ41で接続する。その後、SAW素子1
6及びワイヤ41全体を被覆するように、回路基板19
上に封止樹脂18を設けてSAWデバイスを得る。
Next, the SAW is formed on the circuit board 19 with the resin 40.
The element 16 is fixed. Next, the connection electrode 13 and the external electrode 20 are connected by the wire 41. Then, the SAW element 1
6 and the entire wire 41 are covered with the circuit board 19.
The SAW device is obtained by providing the sealing resin 18 thereon.

【0072】本実施の形態2のSAWデバイスも実施の
形態1と同様にして枠体14及び蓋体15を形成したの
で、同様の効果が得られる。
The SAW device according to the second embodiment also has the same effect as the first embodiment since the frame 14 and the lid 15 are formed in the same manner as in the first embodiment.

【0073】また本実施の形態2においても実施の形態
1と同様に枠体14及び蓋体15の形成により、存在す
る圧電基板11上の感光性樹脂の残渣を酸素プラズマで
除去しているので、接続電極13とワイヤ41との電気
的接続を確実に取ることができる。
Also in the second embodiment, as in the first embodiment, since the frame 14 and the lid 15 are formed, the existing photosensitive resin residue on the piezoelectric substrate 11 is removed by oxygen plasma. Thus, the electrical connection between the connection electrode 13 and the wire 41 can be reliably established.

【0074】さらに本実施の形態2においては、封止樹
脂18でSAW素子16の外周部を被覆したが、封止樹
脂18の代わりに金属キャップなどのカバーを回路基板
19に設けても構わない。もちろん容器状のパッケージ
内に封入しても構わない。
Further, in the second embodiment, the outer periphery of the SAW element 16 is covered with the sealing resin 18, but a cover such as a metal cap may be provided on the circuit board 19 instead of the sealing resin 18. . Of course, it may be enclosed in a container-like package.

【0075】なお上記実施の形態1、2においては、感
光性樹脂フィルムとして感光性モノマー(アクリル系モ
ノマー)を主成分とし、副成分として耐熱性を持たせる
ための熱硬化性樹脂(エポキシ樹脂)、強度向上のため
のフィラー(タルクや水酸化アルミニウムなど)を添加
したものを用いたが、耐熱性及び強度が確保できれば、
熱硬化性樹脂やフィラーを含有していないものを用いて
も構わない。
In the first and second embodiments, a photosensitive monomer (acrylic monomer) is used as the main component of the photosensitive resin film, and a thermosetting resin (epoxy resin) for providing heat resistance is used as an auxiliary component. Although a filler (talc, aluminum hydroxide, etc.) for improving strength was added, if heat resistance and strength could be secured,
A material not containing a thermosetting resin or a filler may be used.

【0076】[0076]

【発明の効果】以上のように本発明は、感光性樹脂を用
いて形成する枠体あるいは蓋体の少なくとも一方におい
て、圧電基板を回転させながら現像液を噴射して現像す
るものであり、感光性樹脂の膨潤、溶解、除去が効果的
に行われ短時間に現像が終了するので、パターンの変形
特に蓋体の変形もなく、また感光性樹脂の残渣が微少と
なる。さらに、酸素プラズマにより感光性樹脂の残渣も
除去されるので、バンプ形成やワイヤボンディング等の
接続強度の安定したSAWデバイスを提供することがで
きる。
As described above, according to the present invention, at least one of a frame and a lid formed by using a photosensitive resin is developed by spraying a developing solution while rotating a piezoelectric substrate. Since the swelling, dissolution, and removal of the photosensitive resin are effectively performed and development is completed in a short time, there is no deformation of the pattern, particularly the deformation of the lid, and the residue of the photosensitive resin is very small. Furthermore, since the residue of the photosensitive resin is also removed by the oxygen plasma, a SAW device having a stable connection strength such as bump formation and wire bonding can be provided.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の実施の形態1におけるSAWデバイス
の断面図
FIG. 1 is a sectional view of a SAW device according to a first embodiment of the present invention.

【図2】本発明の実施の形態1におけるSAWデバイス
の製造工程図
FIG. 2 is a manufacturing process diagram of a SAW device according to the first embodiment of the present invention.

【図3】本発明の実施の形態1、2における現像工程を
説明するための側面図
FIG. 3 is a side view for explaining a developing step in the first and second embodiments of the present invention.

【図4】本発明の実施の形態1、2における現像工程を
説明するための上面図
FIG. 4 is a top view for explaining a developing step according to the first and second embodiments of the present invention.

【図5】本発明の実施の形態1、2における現像工程を
説明するための側面図
FIG. 5 is a side view for explaining a developing step in the first and second embodiments of the present invention.

【図6】本発明の実施の形態1、2における現像工程を
説明するための上面図
FIG. 6 is a top view for explaining a developing step according to the first and second embodiments of the present invention.

【図7】図5の要部拡大側面図FIG. 7 is an enlarged side view of a main part of FIG. 5;

【図8】本発明の他の実施の形態における現像工程を説
明するための側面図
FIG. 8 is a side view for explaining a developing step in another embodiment of the present invention.

【図9】本発明の他の実施の形態における現像工程を説
明するための上面図
FIG. 9 is a top view for explaining a developing step in another embodiment of the present invention.

【図10】比較例における現像工程を説明するための側
面図
FIG. 10 is a side view for explaining a developing step in a comparative example.

【図11】比較例における現像工程を説明するための上
面図
FIG. 11 is a top view for explaining a developing step in a comparative example.

【図12】本発明の実施の形態2におけるSAWデバイ
スの断面図
FIG. 12 is a sectional view of a SAW device according to a second embodiment of the present invention.

【図13】従来のSAWデバイスの断面図FIG. 13 is a sectional view of a conventional SAW device.

【図14】一般的な現像工程を説明するための断面図FIG. 14 is a cross-sectional view for explaining a general developing process.

【図15】一般的な現像工程を説明するための側面図FIG. 15 is a side view for explaining a general developing process.

【符号の説明】[Explanation of symbols]

11 圧電基板 12 IDT 13 接続電極 14 枠体 15 蓋体 16 SAW素子 17 バンプ 18 封止樹脂 19 回路基板 20 外部電極 21 テーブル 22 直線ノズル 23 現像液 24 露光部 25 未露光部 31 扇形ノズル 32 充円錐ノズル 40 樹脂 41 ワイヤ DESCRIPTION OF SYMBOLS 11 Piezoelectric substrate 12 IDT 13 Connection electrode 14 Frame 15 Lid 16 SAW element 17 Bump 18 Sealing resin 19 Circuit board 20 External electrode 21 Table 22 Linear nozzle 23 Developing liquid 24 Exposed part 25 Unexposed part 31 Sector nozzle 32 Filled cone Nozzle 40 Resin 41 Wire

Claims (9)

【特許請求の範囲】[Claims] 【請求項1】 圧電基板の表面にインターディジタルト
ランスデューサ及びこのインターディジタルトランスデ
ューサに接続した接続電極を形成する第1の工程と、次
に感光性樹脂フィルムを前記圧電基板の表面上に密着さ
せて所定のパターンで露光、現像することにより前記イ
ンターディジタルトランスデューサの外周部を囲む枠体
を形成する第2の工程と、次いで感光性樹脂フィルムを
前記圧電基板の表面に再び密着させ所定のパターンで露
光、現像することにより前記枠体の上に蓋体を形成して
前記インターディジタルトランスデューサをこの枠体及
び蓋体で被覆する第3の工程と、次いで前記枠体及び蓋
体の外周を被覆するカバーを設ける第4の工程とを備
え、前記第2及び第3の工程における現像の少なくとも
一方は前記圧電基板を回転させながら現像液を噴射する
ことにより行うSAWデバイスの製造方法。
A first step of forming an interdigital transducer and a connection electrode connected to the interdigital transducer on a surface of the piezoelectric substrate; and a step of bringing a photosensitive resin film into close contact with the surface of the piezoelectric substrate for a predetermined time. A second step of forming a frame surrounding the outer periphery of the interdigital transducer by exposing and developing the pattern, and then exposing the photosensitive resin film to the surface of the piezoelectric substrate again in a predetermined pattern, A third step of forming a lid on the frame by developing and covering the interdigital transducer with the frame and the lid, and then a cover for covering the outer periphery of the frame and the lid. And providing at least one of the developing steps in the second and third steps by using the piezoelectric substrate. A method for manufacturing a SAW device by spraying a developer while rotating the SAW device.
【請求項2】 現像液の噴射は直線ノズルあるいは扇形
ノズルを用いて行う請求項1に記載のSAWデバイスの
製造方法。
2. The method for manufacturing a SAW device according to claim 1, wherein the injection of the developing solution is performed using a linear nozzle or a fan-shaped nozzle.
【請求項3】 第2の工程において、現像液の噴射は圧
電基板に対し上方垂直方向から行う請求項1に記載のS
AWデバイスの製造方法。
3. The method according to claim 1, wherein in the second step, the developer is injected from a direction perpendicular to the piezoelectric substrate from above.
Manufacturing method of AW device.
【請求項4】 第3の工程において、現像液の噴射は圧
電基板に対し上方斜め方向から行う請求項1に記載のS
AWデバイスの製造方法。
4. The method according to claim 1, wherein, in the third step, the developer is injected from an obliquely upward direction with respect to the piezoelectric substrate.
Manufacturing method of AW device.
【請求項5】 第2の工程後、第3の工程前に酸素プラ
ズマ中に圧電基板を所定時間保持する工程を有する請求
項1に記載のSAWデバイスの製造方法。
5. The method for manufacturing a SAW device according to claim 1, further comprising a step of holding the piezoelectric substrate in oxygen plasma for a predetermined time after the second step and before the third step.
【請求項6】 第3の工程後、第4の工程前に酸素プラ
ズマ中に圧電基板を所定時間保持する工程を有する請求
項1に記載のSAWデバイスの製造方法。
6. The method for manufacturing a SAW device according to claim 1, further comprising a step of holding the piezoelectric substrate in oxygen plasma for a predetermined time after the third step and before the fourth step.
【請求項7】 圧電基板を熱処理後酸素プラズマ中に保
持する請求項6に記載のSAWデバイスの製造方法。
7. The method for manufacturing a SAW device according to claim 6, wherein the piezoelectric substrate is held in oxygen plasma after the heat treatment.
【請求項8】 熱処理前に圧電基板に紫外線を照射する
請求項7に記載のSAWデバイスの製造方法。
8. The method for manufacturing a SAW device according to claim 7, wherein ultraviolet rays are irradiated to the piezoelectric substrate before the heat treatment.
【請求項9】 酸素プラズマ中に所定時間保持後徐々に
減圧を行う請求項6に記載のSAWデバイスの製造方
法。
9. The method for manufacturing a SAW device according to claim 6, wherein the pressure is gradually reduced after maintaining in oxygen plasma for a predetermined time.
JP2001092497A 2001-03-28 2001-03-28 Manufacturing method of saw device Pending JP2002290183A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001092497A JP2002290183A (en) 2001-03-28 2001-03-28 Manufacturing method of saw device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001092497A JP2002290183A (en) 2001-03-28 2001-03-28 Manufacturing method of saw device

Publications (1)

Publication Number Publication Date
JP2002290183A true JP2002290183A (en) 2002-10-04

Family

ID=18946948

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001092497A Pending JP2002290183A (en) 2001-03-28 2001-03-28 Manufacturing method of saw device

Country Status (1)

Country Link
JP (1) JP2002290183A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7205705B2 (en) 2002-12-19 2007-04-17 Murata Manufacturing Co., Ltd. Electronic component and method of producing the same
WO2011136070A1 (en) * 2010-04-27 2011-11-03 京セラ株式会社 Surface acoustic wave device and method for manufacturing same
JP2014099781A (en) * 2012-11-15 2014-05-29 Nippon Dempa Kogyo Co Ltd Piezoelectric component

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7205705B2 (en) 2002-12-19 2007-04-17 Murata Manufacturing Co., Ltd. Electronic component and method of producing the same
WO2011136070A1 (en) * 2010-04-27 2011-11-03 京セラ株式会社 Surface acoustic wave device and method for manufacturing same
JP5514898B2 (en) * 2010-04-27 2014-06-04 京セラ株式会社 Elastic wave device and manufacturing method thereof
JP2014099781A (en) * 2012-11-15 2014-05-29 Nippon Dempa Kogyo Co Ltd Piezoelectric component

Similar Documents

Publication Publication Date Title
US7484279B2 (en) Method of forming a conductive through hole for a piezoelectric substrate
JP5090471B2 (en) Elastic wave device
US7854050B2 (en) Method of manufacturing a surface acoustic wave device
JP5032572B2 (en) Surface acoustic wave device and manufacturing method thereof
KR100499207B1 (en) Surface acoustic wave device and method of manufacture thereof
JP2011103645A (en) Acoustic wave device and electronic apparatus using the same
JPH07230173A (en) Developing method and device
JP4697232B2 (en) Method for manufacturing surface acoustic wave device and surface acoustic wave device
JP2007324162A (en) Semiconductor device and its manufacturing process
US20090021109A1 (en) Under bump metal film, method for forming same, and surface acoustic wave device
JP2008227748A (en) Elastic wave device and its manufacturing method
JP4970684B2 (en) Encapsulation for electrical structural element and method of manufacturing the same
JP2008135971A (en) Elastic wave device
JP2002290183A (en) Manufacturing method of saw device
JP2002016466A (en) Surface acoustic wave device and producing method therefor
JP2002222899A (en) Electronic component, method for manufacturing electronic component and method for manufacturing electronic circuit device
JP2004147220A (en) Structure of saw (surface acoustic wave) chip, its manufacturing method, surface-mounted saw device and its manufacturing method
JP2009164435A (en) Manufacturing method of semiconductor device, and semiconductor device
KR102570224B1 (en) Substrate procesing apparatus
JP2005102113A (en) Fbar element and manufacturing method thereof
JP2010239180A (en) Method for manufacturing piezoelectric device
KR100808760B1 (en) Through-hole forming method, and piezoelectric device manufacturing method and piezoelectric device manufactured thereby
JP2003110392A (en) Method of manufacturing electronic component
JP2002316110A (en) Electronic part washing method and washing apparatus used therein
JP2006253437A (en) Method of manufacturing semiconductor device