JP2002289906A - Semiconductor light-receiving element, semiconductor light receiving device, and semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To manufacture an optical module or an optical transmitter which is superhigh in speed and has high sensitivity by scaling down of the size of an element for the reduction of an element capacity C of a board incidence type of semiconductor light-receiving element. SOLUTION: A plurality of ohmic connections 10 having their dimensions specified and a reflector 12, where being in contact with a semiconductor, a transparent film and a metal film 11 are stacked in this order are mixed within the diameter of light reception on a substrate that the incident light reaches after permeating the semiconductor, besides being located on the opposite side from the light incidence side of the board incidence type of semiconductor light-receiving element. Consequently, the optical module, the semiconductor light receiving device, and the optical transmitter, which are superhigh in speed and has high sensitivity corresponding to the enlargement of the transmission capacity can be manufactured with high reproductivity.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a semiconductor light receiving element,
The present invention relates to a semiconductor light receiving device and a semiconductor device, and more particularly, to a substrate incident type semiconductor light receiving element that receives light from a direction perpendicular to a semiconductor substrate surface and converts the light into an electric signal, and a semiconductor light receiving device and a semiconductor device using the same. The present invention relates to a semiconductor light receiving element used in the field of optical communication, a semiconductor light receiving device equipped with the semiconductor light receiving element, and an optical transmission device.

[0002]

2. Description of the Related Art In recent years, with the rapid increase of information services such as the Internet and the demand for information transmission requiring a large capacity of image information and the like, the transmission capacity of an information network has been rapidly increased.

In order to construct an optical communication system having a transmission capacity of 10 Gbps or more, it is essential to develop an optical transmission device having ultra-high speed and high sensitivity characteristics. Ultra-high speed and high sensitivity of the light receiving element are essential.

The response speed of a semiconductor light receiving element is determined by the element capacitance C
It is defined by the CR time constant determined by the product of the load resistance R and the transit time of carriers excited by the incident optical signal.

Therefore, in order to increase the response speed,
It is required to reduce the element capacitance C and the load resistance R and to shorten the carrier traveling time. Since the transit time is proportional to the thickness of the light absorbing layer in the semiconductor light receiving element,
It is necessary to make the light absorbing layer as thin as possible. However, by reducing the thickness of the light absorbing layer, the amount of light that is transmitted without being absorbed by the light absorbing layer increases. Therefore, reducing the thickness of the light absorbing layer causes a reduction in sensitivity.

As described above, since the response speed and the sensitivity are opposite to each other with respect to the thickness of the light absorbing layer, it is extremely difficult to realize a semiconductor light receiving element that satisfies both the high response speed and high sensitivity characteristics. This has been a major problem in developing an ultra-high-speed and high-sensitivity optical transmission device.

As a technique for solving the above problem, a semiconductor device having a size corresponding to the size of a light receiving diameter on a substrate on the side opposite to the light incident side and at which incident light reaches through the light absorbing layer, A reflecting mirror having a two-layer structure of a dielectric film and an electrode metal film is formed from below in contact with the layer to efficiently reflect light transmitted without being absorbed by the light absorbing layer and return the light absorbing layer (known technology) (Referred to as JP-A-5-218488).

FIG. 2 shows an avalanche multiplication type back-illuminated semiconductor light receiving element (APD) manufactured by using the above-mentioned known technique.
1 shows a schematic cross-sectional structure. As shown, n-type InP
0.7 μm-thick high-concentration n-type InAlAs on substrate 21
Buffer layer 22, low-concentration n-type InAl having a thickness of 0.2 μm
As multiplication layer 23, undoped InG having a thickness of 0.05 μm
aAs / InAlAs superlattice layer 24, low-concentration p-type InGaAs light absorption layer 25 having a thickness of 1.0 μm, thickness 1.0 μm
A p-type InAlAs buffer layer 26 and a high-concentration p-type InGaAs contact layer 27 having a thickness of 0.1 nm are sequentially grown to form a mesa structure having a pn junction diameter of 50 μmφ.

The substrate surface is passivated by a SiN insulating film 28, and n
A type ohmic electrode 29 is formed. The p-type ohmic electrode 30 is formed on the contact layer 27 and the contact layer 27.
40 μmφ SiN formed in the upper light receiving diameter
It is also laminated on the insulating film 28.

The dielectric film 28 made of a SiN insulating film or the like
High temperature annealing in the fabrication process
Since it hardly reacts with the p-type InGaAs contact layer 26 as a semiconductor layer and the p-type ohmic electrode 30,
The flatness of the interface is maintained in an extremely good state. Therefore, the metal surface made of the p-type ohmic electrode 30 in contact with the SiN insulating film 28, that is, the SiN insulating film 28
/ P-type ohmic electrode 30 Reflecting mirror 31 composed of a laminated film
However, since the transmitted light can be reflected at almost 100% reflectance and introduced again into the light absorbing layer 25, the quantum efficiency can be improved.

Since the larger the area of the reflecting mirror 31 is, the larger the effective light receiving diameter can be made, the quantum efficiency of the element depends on the area of the reflecting mirror. In addition, the ohmic connection between the electrode metal film and the semiconductor layer may be formed in a peripheral portion other than the reflecting mirror 31, and the low reflection region generated by the ohmic connection hardly directly affects light reflection. .

[0012]

However, in the future, in optical communications and the like, the influence of the element capacitance C becomes extremely large with the further expansion of the transmission capacity. To develop optical transmission equipment,
It is also necessary to reduce the element size to reduce the element capacitance C. Ideally, the element size is such that the ratio of the minimum required effective light receiving diameter to the diameter of the pn junction of the element is 1.

When the above known technique is used, the light receiving diameter and p
When the ratio of the n-junction diameters approaches 1 as much as possible, in order to secure a wide effective light receiving diameter (= reflection mirror area), the area of the ohmic connection portion formed other than the reflection mirror must be reduced. Therefore, the element resistance increases.

Conversely, if the area of the ohmic connection is sufficiently ensured, the effective light receiving diameter (= reflection mirror area) must be reduced, resulting in a decrease in sensitivity. As an example, in the case of the semiconductor light receiving element, the pn junction diameter is 5
0 μm, the element capacitance is about 0.1 pF and 10
A frequency response characteristic of GHz or more can be obtained. With this element,
For example, assuming a 40 GHz operation, the element capacitance is limited to 0.05 pF due to the limitation of the CR time constant. Therefore, when the optimum pn junction diameter is calculated from this value, it becomes about 34 μmφ.

Therefore, when a light-receiving element having the same element resistance as described above is manufactured using the above-described conventional technique, the effective light-receiving diameter is 20 μm or less, and the accuracy of optical axis alignment with the fiber is required during mounting. Not only that, there is a high risk that an optical axis shift occurs during use due to a change in the environmental temperature, leading to a decrease in quantum efficiency. As described above, in the substrate-illuminated semiconductor light receiving element according to the above-described conventional technique, it is difficult to reduce the element size to reduce the element capacitance C.
This has been a major problem in developing an ultra-high speed and high sensitivity optical transmission device.

SUMMARY OF THE INVENTION An object of the present invention is to provide a high-sensitivity and high-speed substrate-illuminated semiconductor light-receiving element which does not cause an increase in element resistance and a decrease in quantum efficiency even when the element size is reduced, and a semiconductor mounted with the semiconductor light-receiving element. A light receiving device and a semiconductor device are provided.

[0017]

In order to achieve the above object, a semiconductor light receiving element according to the present invention is provided on a side opposite to a light incident side of a substrate incident type semiconductor light receiving element (hereinafter also referred to as a back side incident type semiconductor light receiving element). And within the light receiving diameter of the substrate on which the incident light is transmitted through the semiconductor, a plurality of ohmic connection portions in the form of a thin line or a dot, and a reflection in which a transparent film and a metal film are stacked in contact with the semiconductor in this order. It is configured by mixing a mirror.
Here, the thin line or dot shape is preferably a concentric ring from the viewpoint of manufacturing as shown in the following embodiments of the invention, but is not limited thereto, and is not limited to a lattice shape or a rectangular shape. This includes the case where isolated patterns such as circles are distributed.

The size of the thin line or dot shape of the ohmic connection is set to a size that makes it difficult for incident light to be recognized. Specifically, since the wavelength of light is about 1.5 μm, it is desirable that the width of the thin line or the dot diameter is 2 μm or less.

The substrate-incident type semiconductor light receiving element of the present invention utilizes the property of light, that is, the property of not being able to recognize the shape of an object having a size smaller than the wavelength of the light itself, and utilizing the property of spreading in the traveling direction. The thin line or dot shaped ohmic connection does not work as a reflection surface but works as an electrode. Therefore, the light reflecting surface of the substrate incident type semiconductor light receiving element is
The area is substantially equal to the sum of the area of the ohmic connection portion and the area of the lower portion of the stack in the order of the transparent film and the metal film, that is, the effective light receiving area. For example, when a circular ohmic connection having a diameter of about 1.0 μm in contact with a semiconductor is scattered in the reflecting mirror surface, the outline of the ohmic connection having low reflection is blurred, and the light reflected by the surrounding reflector is spread. As a result, the reflected light within the light receiving diameter where the reflecting mirror and the ohmic connection are mixed is almost completely reflected light dominated by the bright portion, so that there is almost no influence of the dark portion generated by the ohmic connection, and the overall High reflectivity and flatness of in-plane sensitivity characteristics can be maintained.

Therefore, while securing an effective reflection area,
The area of the ohmic connection can be ensured, and the current path between the ohmic electrode and the semiconductor is arranged using the entire area within the light receiving diameter. Therefore, even if the total ohmic connection area is slightly reduced, the operation of the device is affected. Since the resistance of the element does not increase significantly enough to give
Reduce RC time constant to achieve higher speed. At the same time, the effective reflection area is not affected by the ohmic connection, so that the amount of reflected light can be increased and the quantum efficiency, that is, the sensitivity can be increased. In other words, the size of the semiconductor light receiving element can be reduced without increasing the RC time constant, the element capacitance C can be reduced, and the semiconductor light receiving element with high sensitivity while maintaining high-speed response characteristics, and A semiconductor light receiving device and a semiconductor device having the same mounted can be realized.

[0021]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS <Embodiment 1> FIGS. 1A and 1B are a schematic sectional view and a partial plan view, respectively, of a first embodiment of a substrate-illuminated semiconductor light receiving device according to the present invention. . This embodiment is an avalanche multiplication type back-illuminated type semiconductor light receiving element (APD) in which semiconductor layers 2 to 7 including a light absorption layer 5 are formed on a substrate 1 and the upper surface thereof, that is, the light incident side of an optical signal. A plurality of ring-shaped ohmic connection portions 10 on the opposite side of the substrate and within a light receiving diameter on the substrate through which the incident light passes through the semiconductor, and a reflection film in which a transparent film and a metal film are laminated in contact with the semiconductor 7 in this order. The mirror 11 and the mirror 11 are mixed. The plurality of ring-shaped ohmic connection portions 10 are concentric patterns with a line width of 2 μm or less centered on the center of the electrode formation region.

The manufacturing method of this embodiment will be described briefly. Using a well-known molecular beam epitaxial growth (MBE) method, a 0.7 μm-thick high-concentration n-type InAl
As buffer layer 2, low-concentration n-type InA with a thickness of 0.2 μm
lAs multiplying layer 3, undoped InG having a thickness of 0.05 μm
aAs / InAlAs superlattice layer 4, low-concentration p-type InGaAs light absorbing layer 5 having a thickness of 1.0 μm, p having a thickness of 1.0 μm
A type InAlAs buffer layer 6 and a high-concentration p-type InGaAs contact layer 7 having a thickness of 0.1 nm are sequentially grown, and a mesa structure having a pn junction diameter of 50 μm is formed by chemical etching.

The substrate surface is passivated by a SiN insulating film 8, and an n-type ohmic electrode 9 is formed in a desired region on the n-type InP substrate 1. The SiN insulating film 8 on the contact layer 6 has an opening in the ohmic connection portion 10 formed of a triple concentric pattern with a line width of 1.0 μm.
On the upper SiN insulating film 8, a p-type ohmic electrode 11 is provided. In the ohmic connection section 10, the contact layer 7 and the p-type ohmic electrode 11 are in contact with each other, so that good ohmic characteristics can be obtained. In addition, a reflecting mirror 12 composed of a laminated film of the other SiN insulating film 8 / p-type ohmic electrode 11
(Surrounded by a dotted line) reflects the signal light well.

The breakdown voltage of the semiconductor light receiving element of the above embodiment is about 30 V, and multiplication occurs from a voltage of 15 V. Therefore, the operating voltage of the light receiving element is 15 V to 30 V.
The maximum multiplication factor was 80 or more, and the multiplication factor at an applied voltage of 27 V was about 10. When the high-frequency characteristics of the device were measured with a load resistance of 50Ω, the 3 dB band was 17 GHz or more in the range of the gain of 2 to 12.

In an APD having a conventional structure of a pn junction having a reflecting mirror with a diameter of 50 μmφ, the quantum efficiency is about 83%. In the APD of the present embodiment in which the ohmic connection portions are mixed together, the quantum efficiency was about 91%, which was a better value than the conventional structure. This is because the effective light receiving diameter is 4
This is due to the increase from 0 μmφ to 50 μmφ. In this embodiment, if the pn junction diameter is the same, a higher quantum efficiency can be obtained than in the conventional structure, and the above-described effect increases the width of the positional deviation tolerance for the signal light. be able to.

Although the capacitance of the light receiving element in this embodiment is about 0.1 pF, the present invention can easily cope with further reduction of the element size, so that the semiconductor light receiving element operating at 40 GHz using the conventional device is used. Is also possible.

FIG. 3 is a sectional view of an embodiment of a light receiving module using the back illuminated semiconductor light receiving element of the present invention. Anode pin 36, cathode pin 37, case pin 38,
Header 33 including lens holder 39 and lens 32
The back illuminated semiconductor light receiving element 34 of the present invention was flip-chip mounted on the mount 35 on which the metal wiring was formed at the desired position above.

The connection between the semiconductor light receiving element 34 and the metal wiring on the mount 35 is made by using AuSn solder, and the connection between the metal wiring on the mount 35 and the anode pins 36 and the cathode pins 37 is made by using Au wires by crimping. Was. The positional deviation from the lens when the element was mounted was suppressed to ± 1.0 μm or less, and light with a wavelength of 1.55 μm was incident using an optical fiber, and the quantum efficiency was as high as 93.2%. . <Embodiment 3> FIG. 4 is a sectional view of another embodiment of an optical module using the back-illuminated semiconductor light receiving element of the present invention. Insulating film 40 and V-groove optical waveguide substrate 41 having metal wiring
A carrier 43 having metal wiring on which a back-illuminated semiconductor light receiving element 42 of the present invention is flip-chip mounted is mounted thereon.

Here, the semiconductor light receiving element 42 and the carrier 43
The connection with the upper metal wiring and the connection with the metal wiring on the V-groove optical waveguide substrate 41 on the carrier 43 used AuSn solder. Thereafter, the flat end optical fiber 44 was fixed in the V groove.

In this embodiment, the positional deviation when mounting the element and fixing the optical fiber was suppressed to ± 1.0 μm or less, and the light receiving sensitivity to the light having a wavelength of 1.55 μm was as high as 0.87 A / W. . The maximum cutoff frequency was 20 GHz or more, and no band degradation due to stray capacitance or the like was observed. <Embodiment 4> FIG. 5 is a sectional view of still another embodiment of the optical module according to the present invention. This embodiment uses a back-illuminated PIN-PD according to the present invention as a monitor. On a V-groove optical waveguide substrate 41 having an insulating film 40, a metal wiring for a monitor light receiving element, and a metal wiring for a semiconductor laser,
A semiconductor laser 45 and a carrier 43 having metal wiring on which a back-illuminated PIN-PD 46 is flip-chip mounted are mounted.

Here, the connection of the back-illuminated PIN-PD 46 to the metal wiring on the carrier 43, the connection to the metal wiring for the monitor light receiving element on the V-groove optical waveguide substrate 41 on the carrier 43, and the semiconductor laser 45 and the semiconductor AuSn solder was used for connection with the metal wiring for laser. After that, the flat end optical fiber 444 was fixed in the V groove.

In this embodiment, the positional deviation when each element is mounted and when the optical fiber is fixed is suppressed to ± 1.0 μm or less.
The optical coupling loss between the semiconductor laser 45 and the monitoring PIN-PD 46 was 1-2 dB. The monitor current at an external output of 1 mW was as good as 600 μA. <Embodiment 5> FIG. 6 is a perspective view of an embodiment of a light receiving module packaged using a back illuminated semiconductor light receiving element according to the present invention. A carrier 43 having metal wiring on which a back-illuminated semiconductor light receiving element 42 of the present invention is flip-chip mounted is mounted on a V-groove substrate 47, and a preamplifier IC 48 for reception is also mounted on the V-groove substrate 47 for higher sensitivity. did. Further, an optical fiber 49 for signal light incidence was attached, fixed to a ceramic base 50, and covered with a cap 51.

The produced module was evaluated for transmission. In optical transmission at a signal light wavelength of 1.5 μm and a transmission speed of 10 Gb / s, the minimum light receiving sensitivity at an error rate of 10 −12 was as good as −27 dBm. Ceramic base 5
Instead of the 0 and the cap 51, a resin material, a resin transfer mold, or the like may be used. Further, instead of the V-groove substrate 47, an optical waveguide furnace substrate having an optical circuit may be used. Further, an optical transmission and transmission / reception module using the back-illuminated semiconductor light receiving element of the present invention may be packaged. <Embodiment 6> FIG. 7 is a perspective view of an embodiment of an optical transmission device using a back illuminated semiconductor light receiving element according to the present invention. A light receiving module 52 equipped with the back illuminated semiconductor light receiving element of the present invention and having an optical fiber 49 for signal light incidence, a receiving IC 53 and other electronic components are mounted on a board 54.

FIG. 8 is a block diagram showing the configuration of an optical transmission device using the light receiving element of the present invention. Optical receiving module 5
2 is a back-illuminated semiconductor light receiving element 42 and a preamplifier IC 48
The voltage signal is obtained by the operation described in the fifth embodiment. Then a classifier,
By the receiving IC 53 constituted by the clock extractor,
It is divided into a digitized electric signal and a clock signal and output. The produced module was evaluated for transmission. In optical transmission at a signal light wavelength of 1.5 μm and a transmission speed of 10 Gb / s, the minimum light receiving sensitivity at an error rate of 10 −12 was as good as −27 dBm.

Instead of the optical receiving module, an optical transmitting module and an optical transmitting / receiving module in which the back-illuminated semiconductor light receiving element of the present invention is integrated may be mounted. In the above embodiments, the semiconductor light receiving element having a mesa shape, and the optical module and the optical transmission device equipped with the same have been described. However, the electrode structure of the present invention is applied to other planar light receiving elements. Needless to say, it is good.

The use of the back-illuminated semiconductor light-receiving element according to the embodiment of the present invention does not increase the element resistance and provides a high quantum efficiency. Can be done.

Although the embodiment of the present invention has been described above, the present invention is not limited to the embodiment. For example, in the embodiment, the mesa-shaped back-illuminated type semiconductor light receiving element has been described. However, the electrode structure according to the present invention may be used for other planar type elements. In the embodiment, the SiN
Insulating film single layer was used, but SiO ₂ film, SiON film, polyimide film
Insulating film single layer film such as SOG film or a multilayer film in which these films are laminated, or insulating film single layer film such as metal oxide film, metal nitride film, etc., which has transparency to light, or these films are laminated A conductive film such as the above-described metal oxide film or metal nitride film may be used only on the multilayer film or the contact layer.

[0038]

The use of the substrate-illuminated semiconductor light receiving device of the present invention does not increase the device resistance and provides high quantum efficiency.
A highly sensitive optical module, semiconductor light receiving device, and optical transmission device can be manufactured with high reproducibility.

[Brief description of the drawings]

FIG. 1 is a schematic sectional view and a partial plan view of a first embodiment of a semiconductor light receiving element according to the present invention.

FIG. 2 is a cross-sectional structural view of an avalanche multiplication type back illuminated semiconductor light receiving element according to a conventional technique.

FIG. 3 is a cross-sectional view of one embodiment of a light receiving module using a back-illuminated semiconductor light receiving element according to the present invention.

FIG. 4 is a cross-sectional view of another embodiment of the optical module using the back illuminated semiconductor light receiving element of the present invention.

FIG. 5 is a sectional view of still another embodiment of the optical module according to the present invention.

FIG. 6 is a perspective view of an embodiment of a light receiving module packaged using the back illuminated semiconductor light receiving element according to the present invention.

FIG. 7 is a perspective view of an embodiment of an optical transmission device using the back-illuminated semiconductor light receiving element of the present invention.

FIG. 8 is a block diagram showing a configuration of an optical transmission device using the light receiving element of the present invention.

[Explanation of symbols]

1 ... n-type InP substrate 2 ... high-concentration n-type InAlA
s buffer layer, 3... low concentration n-type InAlAs multiplication layer,
4 ... Undoped InGaAs / InAlAs superlattice layer, 5 ... Low-concentration p-type InGaAs light absorbing layer, 6 ... P
-Type InAlAs buffer electrode, 7 high-concentration p-type In
GaAs contact layer, 8 ... SiN insulating film, 9 ... n
Type ohmic electrode, 10 ... ohmic connection part, 11 ...
... p-type ohmic electrode, 12 ... reflecting mirror, 21 ... n-type InP substrate, 22 ... high-concentration n-type InAlAs buffer layer, 23 ... low-concentration n-type InAlAs multiplication layer, 24 ...
Undoped InGaAs / InAlAs superlattice layer, 25
... Low-concentration p-type InGaAs light absorbing layer, 26... P-type I
nAlAs buffer electrode, 27 high-concentration p-type InGa
As contact layer, 28 ... SiN insulating film, 29 ... n
Ohmic electrode, 30 p-type ohmic electrode, 31
…… Reflector, 32 …… Lens, 33 …… Header, 34
... Back-thinned semiconductor light receiving element of the present invention, 35... Mount, 36... Anode pin, 37... Cathode pin 38, case pin 39, lens holder 4
0: insulating film 41: V-groove optical waveguide substrate 42:
Back-illuminated semiconductor light receiving element of the present invention, 43... Carrier, 44... Optical fiber, 45.
6: Monitor back-illuminated PIN-PD of the present invention, 4
7 V-groove substrate 48 Preamplifier IC for reception 49
…… Signal light incidence optical fiber, 50 …… Base, 51
… Cap, 52… Optical receiving module, 53… Receiving IC, 54… Board.

 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Shihisa Tanaka 1-280 Higashi Koigakubo, Kokubunji-shi, Tokyo F-term in Central Research Laboratory, Hitachi, Ltd. 2H037 AA01 BA02 BA11 DA03 DA04 DA12 4M118 AA01 AA10 AB05 BA01 BA02 CA05 CB01 CB03 CB14 FC03 GA02 GA08 HA21 HA22 HA23 5F049 MA04 MA08 MB07 NA01 NA03 NA15 NB01 SZ16 TA14 WA01 5F088 AA03 AA05 AB07 BA01 BA02 BB01 HA09 JA14 LA01 5F089 AA01 AB03 AC08 CA12 CA14 GA10

Claims (11)

[Claims] A plurality of thin line-like or point-like shapes are provided within a light receiving diameter on a substrate on a side opposite to a light incident side of a substrate incident type semiconductor light receiving element and at which incident light passes through a semiconductor and reaches. A semiconductor light receiving element comprising a mixture of an ohmic connection part and a reflecting mirror laminated on a semiconductor in the order of a transparent film and a metal film. 2. The method according to claim 1, wherein each of the plurality of ohmic connection portions having a thin line or a dot shape has a width of the thin line shape or a maximum width of the point shape of 2 μm or less. Item 2. The semiconductor light receiving element according to Item 1. 3. The semiconductor light receiving device according to claim 1, wherein said transparent film is a single-layer dielectric insulating film or a multilayer dielectric insulating film in which a plurality of different kinds of films are laminated. 4. The semiconductor light receiving device according to claim 1, wherein said transparent film is a film having conductivity. 5. A semiconductor light receiving device, wherein the semiconductor light receiving element according to claim 1 is mounted on a substrate. 6. A semiconductor wherein the semiconductor light-receiving element according to claim 1 and an optical fiber for emitting light to the semiconductor light-receiving element are integrated on a same substrate. Light receiving device. 7. A semiconductor, wherein the semiconductor light-receiving element according to claim 1 and a semiconductor laser that emits light to the semiconductor light-receiving element are integrated on the same substrate. apparatus. 8. The semiconductor light-receiving element according to claim 1, wherein an optical fiber for emitting light to the semiconductor light-receiving element and a semiconductor laser for emitting light to the optical fiber are the same. A semiconductor device integrated on a substrate. 9. An optical module, wherein the semiconductor device according to claim 7 is packaged with ceramic or resin. 10. An electronic circuit electrically connected to the semiconductor light receiving element is mounted on the substrate of the semiconductor device according to claim 7 and packaged with ceramic or resin. Optical module. 11. An optical transmission device comprising the optical module according to claim 9 and an electronic circuit mounted on the same board.