JP2002287343A - Positive type photoresist composition - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a positive type photoresist composition excellent in sensitivity and resolution and less liable to shrink. SOLUTION: The positive type photoresist composition contains (A) an alkali- soluble resin, (B) a quinonediazido ester of formula 1 and (C) a compound of formula 2.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a positive photoresist composition which is excellent in sensitivity and resolution and is suitable for forming a resist pattern with less occurrence of a shrink phenomenon.

[0002]

2. Description of the Related Art In photolithography using i-rays (365 nm), a half-micron or less, particularly 0.35 .mu.m, is used.
Various positive photoresist compositions containing an alkali-soluble novolak resin and a non-benzophenone-based naphthoquinonediazide group-containing compound (photosensitive component) are available as photoresist materials capable of forming a resist pattern having an ultrafine dimension of m or less. Proposed. For example, Japanese Unexamined Patent Publication
Japanese Patent No. 167805 discloses that a positive photoresist material using, as a photosensitive component, an esterification reaction product of a linear polyphenol compound having 4 to 7 nuclei and a naphthoquinonediazidosulfonic acid compound is suitable for an i-line exposure process. It is reported that it is a resolution material.

In forming a resist pattern of 0.35 μm or less, KrF (248 nm) or ArF (193
Photolithography using short-wavelength exposure sources such as (nm) is suitable, but the construction of a production line using these exposure sources requires a large amount of capital investment, and it is difficult to recover the costs spent on these. Is a problem. From this, i-line (365n
m) The life of the exposure process is expected to be prolonged, and a method of performing ultra-fine processing of 0.35 μm or less using a photoresist material for i-line is being studied. However, it is considered difficult to form a resist pattern excellent in various characteristics such as sensitivity, resolution, depth of focus width characteristics, and the like with a dimension equal to or less than the wavelength of the exposure source. When the resist pattern is shifted in the submicron range from the optimum position, there is a problem that a phenomenon in which the resist pattern contracts in the length direction, so-called "shrink" occurs. This is often seen when forming both ends of a resist pattern composed of regular lines and spaces (L & S), an isolated pattern (Iso pattern), or an irregular resist pattern. In the case of manufacturing a logic IC or the like having the above, there is a problem that it is difficult to manufacture with a good yield.

[0004]

SUMMARY OF THE INVENTION Accordingly, an object of the present invention is to solve the above-mentioned conventional problems and to provide a 0.35 .mu.m
An object of the present invention is to provide a positive photoresist composition capable of forming a resist pattern which is excellent in sensitivity and resolution even when forming an ultra-fine resist pattern described below and has less shrinkage when shaking DOF. .

[0005]

Means for Solving the Problems The present inventors have made intensive studies to solve the above-mentioned problems, and as a result, have found that alkali-soluble resins,
A positive photoresist composition comprising a specific quinonediazide esterified product (photosensitive component) and a specific compound (sensitivity improver) has been found to be excellent in sensitivity, resolution, and generating less shrink, The present invention has been completed.

The present invention provides (A) an alkali-soluble resin,
(B) The following general formula (I)

[0007]

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Wherein R ^{1 to} R ⁸ each independently represent a hydrogen atom or an alkyl group having 1 to 3 carbon atoms, and a compound represented by the following general formula (II):

[0009]

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Wherein each of R ^{9 to} R ¹⁸ independently represents a hydrogen atom, an alkyl group having 1 to 3 carbon atoms, or a cyclohexyl group. A photosensitive component (esterified quinonediazide) containing an esterified compound of a compound and a naphthoquinonediazidesulfonic acid compound, and (C) a compound represented by the following general formula (III)

[0011]

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A positive photoresist composition comprising a sensitivity enhancer containing at least one compound selected from the compounds represented by the formula (where x represents 0 or 1): To provide.

Further, the present invention provides a compound represented by the above general formula (I)

[0014]

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It is another object of the present invention to provide the above positive photoresist composition, which is a compound represented by the formula:

Further, the present invention provides a compound represented by the general formula (II):

[0017]

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The present invention provides the above positive photoresist composition, which is a compound represented by the formula:

The present invention also relates to a compound represented by the general formula (III):

[0020]

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The present invention provides the above positive photoresist composition, which is a compound represented by the formula:

The present invention also relates to a compound represented by the general formula (III):

[0023]

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The present invention provides the above positive photoresist composition, which is a compound represented by the formula:

One kind of the compound represented by the general formula (III) is disclosed as a sensitivity improver in Japanese Patent No. 2629990, but the compound represented by the general formula (I) and / or the general formula ( The combination of the compound represented by II) and the compound represented by general formula (III) has not been disclosed in the prior art.

[0026]

BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, the present invention will be described in more detail. (A) Component (Alkali-Soluble Resin) The alkali-soluble resin as the component (A) is not particularly limited, and may be arbitrarily selected from those which can be generally used as a film-forming substance in a positive photoresist composition. And preferably, a condensation reaction product of an aromatic hydroxy compound with an aldehyde or a ketone, polyhydroxystyrene and a derivative thereof.

The aromatic hydroxy compound includes, for example, phenol, m-cresol, p-cresol, o
-Cresols such as cresol; 2,3-xylenol, 2,5-xylenol, 3,5-xylenol,
Xylenols such as 3,4-xylenol; m-ethylphenol, p-ethylphenol, o-ethylphenol, 2,3,5-trimethylphenol, 2,3,5
-Triethylphenol, 4-tert-butylphenol, 3-tert-butylphenol, 2-tert
Alkylphenols such as -butylphenol, 2-tert-butyl-4-methylphenol and 2-tert-butyl-5-methylphenol; p-methoxyphenol, m-methoxyphenol, p-ethoxyphenol, m-ethoxyphenol, p Alkoxyphenols such as propoxyphenol and m-propoxyphenol; isopropenylphenol such as o-isopropenylphenol, p-isopropenylphenol, 2-methyl-4-isopropenylphenol and 2-ethyl-4-isopropenylphenol And arylphenols such as phenylphenol; and polyhydroxyphenols such as 4,4'-dihydroxybiphenyl, bisphenol A, resorcinol, hydroquinone, and pyrogallol. You. These may be used alone or in combination of two or more.

Examples of the aldehydes include formaldehyde, paraformaldehyde, trioxane, acetaldehyde, propionaldehyde, butyraldehyde, trimethylacetaldehyde, acrolein, crotonaldehyde, cyclohexanealdehyde, furfural, furyl acrolein, benzaldehyde, terephthalaldehyde, phenylacetaldehyde, α -Phenylpropylaldehyde, β-phenylpropylaldehyde, o-hydroxybenzaldehyde, m-hydroxybenzaldehyde, p-hydroxybenzaldehyde, o-methylbenzaldehyde, m-methylbenzaldehyde, p-methylbenzaldehyde, o-chlorobenzaldehyde, m-chlorobenzaldehyde , P-chlorobenzaldehyde And cinnamic aldehyde. These may be used alone or in combination of two or more. Among these aldehydes, formaldehyde is preferable in terms of availability, but in particular, in order to improve heat resistance, it is preferable to use a combination of hydroxybenzaldehyde and formaldehyde.

Examples of the ketones include acetone, methyl ethyl ketone, diethyl ketone, diphenyl ketone and the like. These may be used alone or in combination of two or more. Furthermore, aldehydes and ketones may be used in an appropriate combination.

The condensation reaction product of the aromatic hydroxy compound with aldehydes or ketones can be produced by a known method in the presence of an acidic catalyst. Hydrochloric acid, sulfuric acid, formic acid, oxalic acid, p-toluenesulfonic acid and the like can be used as the acidic catalyst at that time.

The polyhydroxystyrene and derivatives thereof include, for example, homopolymers of vinylphenol,
Copolymers of vinylphenol and comonomers copolymerizable therewith are exemplified. Examples of the comonomer include acrylic acid derivatives, acrylonitrile, methacrylic acid derivatives, methacrylonitrile, styrene, α-methylstyrene, p-methylstyrene, o-methylstyrene,
Styrene derivatives such as p-methoxystyrene and p-chlorostyrene are exemplified.

Among them, the alkali-soluble resin suitable as the component (A) in the present invention has a weight average molecular weight (Mw).
2000 to 20000, especially 3000 to 12000
Is preferred. The alkali-soluble resin preferably has a degree of dispersion (Mw / Mn) of 2 to 5. Among them, m-cresol, alkali-soluble novolak resin obtained by condensation reaction of p-cresol and formaldehyde, m-cresol, p-cresol, alkali-soluble resin obtained by condensation reaction of 2,3,5-trimethylphenol with formaldehyde The use of a novolak resin is preferable because a positive photoresist composition having high sensitivity and a wide exposure latitude can be prepared.

Component (B) (Photosensitive Component) In the present invention, component (B) (photosensitive component)
An esterified product of at least one compound selected from the compounds represented by the formulas (I) and (II) and a naphthoquinonediazidesulfonic acid compound (hereinafter, referred to as a quinonediazideesterified product) is used. Thereby, a positive photoresist composition having excellent resolution can be provided. In addition, the average esterification rate of the quinonediazide esterified product of the general formula (I) is 25 to 90%,
It is preferably from 45 to 75%, and if it is less than 25%, the residual film ratio and the resolution are reduced, and if it is more than 90%, the sensitivity is significantly reduced and the development residue (scum) is undesirably increased. On the other hand, the quinonediazide esterified product of the general formula (II) has an average esterification rate of 20 to 90%, preferably 3 to 90%.
When it is less than 20%, the residual film ratio and the resolution are reduced, and when it exceeds 90%, the sensitivity is remarkably reduced and the development residue (scum) is undesirably increased.

Among them, as the component (B) (photosensitive component),
The compound represented by the general formula (I) is represented by the following formula:

[0035]

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When the compound is represented by the formula:
It is preferable because it can provide a positive photoresist composition which is more excellent in resolution and less generates shrink.

The compound represented by the general formula (II) is represented by the following formula:

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When the compound is represented by the formula:
It is preferable because it can provide a positive photoresist composition which is more excellent in resolution and less generates shrink.

In the present invention, as the photosensitive component (B), other quinonediazide esterified compounds can be used, if necessary, in addition to the compounds represented by formulas (I) and (II). Examples of such a quinonediazide esterified product include the following general formula (IV)

[0040]

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[Wherein, R ^{19 to} R ²⁶ each independently represent a hydrogen atom, a halogen atom, an alkyl group having 1 to 6 carbon atoms, an alkoxyl group having 1 to 6 carbon atoms, or a cycloalkyl group; ^{27 to} R ²⁹ each independently represent a hydrogen atom or an alkyl group having 1 to 6 carbon atoms;
Is a hydrogen atom, an alkyl group having 1 to 6 carbon atoms, bonded to R ^27, residues represented cyclic ring carbon atoms chain 3-6 or the following chemical formula,

[0042]

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Wherein R ³⁰ and R ³¹ each independently represent a hydrogen atom, a halogen atom, an alkyl group having 1 to 6 carbon atoms, an alkoxyl group having 1 to 6 carbon atoms, or a cycloalkyl group; A represents an integer of 1 to 3; a represents an integer of 1 to 3; d represents an integer of 0 to 3; and n represents an integer of 0 to 3]. (Including linear trinuclear, linear tetranuclear, linear pentanuclear, trisphenol-like polyphenol compounds, etc., but not including compounds represented by general formulas (I) and (II)) Is mentioned.

When these other quinonediazide esterified compounds are used, the compounding amount thereof is preferably 75% by weight or less, more preferably 50% by weight or less, and preferably 75% by weight or less in the component (B).
If it exceeds, the resolution is remarkably deteriorated, which is not preferable.

In the composition of the present invention, the amount of the component (B) is preferably 20 to 60% by weight, based on the total amount of the alkali-soluble resin (A) and the component (C) described below. Is preferably selected in the range of 30 to 50% by weight. If the amount of the component (B) is less than 20% by weight, an image faithful to the pattern cannot be obtained, and the transferability tends to decrease. On the other hand, if the amount of the component (B) exceeds 60% by weight, the sensitivity is deteriorated and the uniformity of the formed resist film is reduced,
Resolution tends to deteriorate.

Component (C) (sensitizer ) The sensitivity enhancer (sensitizer ) in the present invention has a molecular weight of 10
It is an alkali-soluble low molecular compound having a phenolic hydroxyl group of about 00 or less. In the present invention, by using the specific compound represented by the general formula (III) as the (C) sensitivity enhancer together with the specific quinonediazide esterified product, the compound has high resolution and shrinkage. It can provide a positive photoresist composition with less occurrence, and is suitable for the field of forming a complicated circuit pattern such as a logic IC.

Particularly, as the component (C), the compound represented by the general formula (II)
The compound represented by I) has the following formula

[0048]

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When the compound is represented by the formula:
It is preferable because it can provide a positive photoresist composition which is more excellent in resolution and less generates shrink.

The compound represented by the general formula (III) is represented by the following formula:

[0051]

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When the compound is represented by the formula:
It is preferable because it can provide a positive photoresist composition which is more excellent in resolution and less generates shrink.

The component (C) is represented by the above general formula (III)
In addition to the compound represented by the formula, other alkali-soluble low molecular weight compounds having a phenolic hydroxyl group can also be used. For example, a polyphenol compound represented by the general formula (IV) can be used. For example, 2,6-bis (2,5-dimethyl-4-hydroxyphenylmethyl)
-4-methylphenol, bis (4-hydroxy-2,
3,5-trimethylphenyl) -2-hydroxyphenylmethane, 1,4-bis [1- (3,5-dimethyl-4)
-Hydroxyphenyl) isopropyl] benzene, 2,
4-bis (3,5-dimethyl-4-hydroxyphenylmethyl) -6-methylphenol, bis (4-hydroxy-3,5-dimethylphenyl) -2-hydroxyphenylmethane, bis (4-hydroxy-2, 5-dimethylphenyl) -2-hydroxyphenylmethane, bis (4
-Hydroxy-3,5-dimethylphenyl) -3,4-
Dihydroxyphenylmethane, 1- [1- (4-hydroxyphenyl) isopropyl] -4- [1,1-bis (4-hydroxyphenyl) ethyl] benzene, 1-
[1- (3-methyl-4-hydroxyphenyl) isopropyl] -4- [1,1-bis (3-methyl-4-hydroxyphenyl) ethyl] benzene, 2,6-bis [1
-(2,4-dihydroxyphenyl) isopropyl]-
4-methylphenol, 4,6-bis [1- (4-hydroxyphenyl) isopropyl] resorcin, 4,6-
Bis (3,5-dimethoxy-4-hydroxyphenylmethyl) pyrogallol, 4,6-bis (3,5-dimethyl-4-hydroxyphenylmethyl) pyrogallol, 2,
6-bis (3-methyl-4,6-dihydroxyphenylmethyl) -4-methylphenol, 2,6-bis (2
3,4-trihydroxyphenylmethyl) -4-methylphenol, 1,1-bis (4-hydroxyphenyl)
Cyclohexane and the like.

When such other alkali-soluble low molecular weight compounds having a phenolic hydroxyl group are used, the compounding amount thereof is preferably 75% by weight or less, more preferably 50% by weight or less, and preferably 75% by weight or less in the component (C). %, The effect of suppressing the occurrence of shrinkage decreases, which is not preferable.

The amount of the component (C) is preferably in the range of 20 to 50% by weight, more preferably 30 to 40% by weight, based on the alkali-soluble resin as the component (A).

The composition of the present invention may further contain, if necessary, a compatible additive, an ultraviolet absorber for preventing halation, for example, 2,2 ', 4,4'-tetrahydroxybenzophenone, -Dimethylamino-2 ', 4'
-Dihydroxybenzophenone, 5-amino-3-methyl-1-phenyl-4- (4-hydroxyphenylazo) pyrazole, 4-dimethylamino-4'-hydroxyazobenzene, 4-diethylamino-4'-ethoxyazobenzene, 4- Diethylaminoazobenzene, curcumin and the like, and a surfactant for preventing striation, for example, Florade FC-430, FC431 (trade name, manufactured by Sumitomo 3M Co., Ltd.), F-Top EF122A,
Fluorinated surfactants such as EF122B, EF122C, and EF126 (trade name, manufactured by Tochem Products Co., Ltd.) can be added and contained as long as the object of the present invention is not hindered.

The composition of the present invention is preferably used in the form of a solution by dissolving the components (A) to (C) and various additives in a suitable solvent. Examples of such solvents include the solvents used in conventional positive photoresist compositions, such as acetone, methyl ethyl ketone, cyclohexanone, methyl isoamyl ketone,
Ketones such as heptanone; ethylene glycol, propylene glycol, diethylene glycol, ethylene glycol monoacetate, propylene glycol monoacetate, diethylene glycol monoacetate, or monomethyl ether, monoethyl ether, monopropyl ether, monobutyl ether or monophenyl ether thereof; And cyclic ethers such as dioxane; and ethyl lactate, methyl acetate, ethyl acetate, butyl acetate, methyl pyruvate, ethyl pyruvate, methyl methoxypropionate, and ethyl ethoxypropionate. Esters can be mentioned. These may be used alone or as a mixture of two or more. In particular, ketones such as acetone, methyl ethyl ketone, cyclohexanone, methyl isoamyl ketone, and 2-heptanone; ethyl lactate, methyl acetate, ethyl acetate, butyl acetate, methyl pyruvate, ethyl pyruvate, methyl methoxypropionate, and ethyl ethoxypropionate; Esters are preferred.

One example of a preferred method of using the composition of the present invention is as follows. First, the components (A), (B) and (C), and various components added as required, are described above. Dissolved in a suitable solvent such as this, coated on a silicone wafer or a support on which an antireflection film is formed with a spinner or the like, dried to form a photosensitive layer, and then exposed through a desired mask pattern. I do. Next, when this is immersed in a developing solution, for example, an alkaline aqueous solution such as a 1 to 10% by weight aqueous solution of tetramethylammonium hydroxide (TMAH), the exposed portions are dissolved and removed, and an image faithful to the mask pattern can be obtained.

[0059]

The present invention will be further described below with reference to examples and comparative examples. Various physical properties of the positive photoresist composition were determined as follows. (1) Sensitivity: A sample was applied on a silicon wafer using a spinner, and this was applied on a hot plate at 90 ° C. and 90 ° C.
After drying for a second, a resist film having a thickness of 1.0 μm was obtained. A reduction projection exposure apparatus NSR-2005i10D (manufactured by Nikon Corporation, N
A = 0.57), followed by exposure at 0.1 ° to 0.01 second intervals, followed by PEB (post-exposure bake) treatment at 110 ° C. for 90 seconds, and 2.38% by weight of tetramethylammonium hydroxy (TMAH) aqueous solution at 23 ° C 6
After developing for 0 seconds, washing with water for 30 seconds and drying, 0.3
The optimum exposure time (Eop) at which the line-and-space width of the 5 μm resist pattern was formed at 1: 1 was expressed in milliseconds (ms) as sensitivity. (2) Resolution: It was expressed as the limit resolution at the exposure dose for reproducing a 0.35 μm mask pattern. (3) Shrink evaluation: The sample was applied on a silicon wafer using a spinner, and this was applied on a hot plate for 9 hours.
After drying at 0 ° C. for 90 seconds, a resist film having a thickness of 1.0 μm was obtained. A mask (reticle) corresponding to forming a resist pattern in which five resist patterns each having a width of 0.35 μm and a length of 1.0 μm having a line-and-space ratio of 1: 1 and having a length of 1.0 μm are arranged in a horizontal direction. , Reduction projection exposure apparatus NSR-2005i10D (manufactured by Nikon Corporation, NA = 0.
57). In the above exposure, the optimum exposure time (Eo) is set with the exposure focus shifted from the optimum focus position to the minus side (upward side of the substrate) by 1.0 μm.
p). After exposure, P at 90 ° C for 90 seconds
After performing EB (heating after exposure) treatment, developing with a 2.38% by weight aqueous solution of tetramethylammonium hydroxide (TMAH) at 23 ° C. for 60 seconds, washing with water for 30 seconds and drying, a resist pattern of five lines was formed. Of the resist patterns at both ends, a change in the dimension of the length in the vertical direction was evaluated as a shrink evaluation.

In the shrink evaluation, the change in the length in the vertical direction was in the range of 0.9 μm ≦ “change in the length in the vertical direction” ≦ 1.0 μm, and there was almost no shrink. In the range of ◎, 0.8 μm ≦ “change in length in the vertical direction” <0.9 μm, and in the case where shrinkage was slightly confirmed, ○, 0.7 μm ≦ “length in the vertical direction” Changes in the range of <0.8 μm,
Those in the range of “change in length in the vertical direction” <0.7 μm were evaluated as x.

Example 1 Component (A): 100 parts by weight of an alkali-soluble resin [m-cresol / p-cresol / 2,3,5-trimethylphenol = 35/40/25 (charged molar ratio)
Novolak resin (condensing agent: formaldehyde, polystyrene equivalent weight average molecular weight (Mw) = 5000, dispersity (Mw / Mn) = 3.0) and m-cresol / p-cresol = 42.5 / 57.5 (preparation) Novolak resin (condensing agent: formaldehyde, Mw = 500)
0, Mw / Mn = 3.0) 50/50 (weight ratio) mixture) (B) Component: b1 50 parts by weight [b1: 1 mol of the following phenol compound and 1,2-naphthoquinonediazide-5-sulfonyl chloride (5-NQ
D) Reaction product with 2 mol (esterification rate: 50%)]

[0062]

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Component (C): c1 30 parts by weight [c1: the following compound]

[0064]

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After dissolving the above (A) to (C) in 510 parts by weight of a mixed solvent [ethyl lactate / butyl acetate = 9/1 (weight ratio)], this was filtered using a membrane filter having a pore size of 0.2 μm. Then, a positive photoresist composition was prepared.

Examples 2 to 7 and Comparative Examples 1 to 5 Positive photoresist compositions were prepared in the same manner as in Example 1 except that the components (B) and (C) were changed to those shown in Table 1 below. .

[0067]

[Table 1]

B1: 1 mol of the following phenol compound and 5-
Reaction product with 2 mol of NQD (esterification ratio: 50
%)]

[0069]

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B2: 1 mol of the following phenol compound and 5-
Reaction product with 2 mol of NQD (esterification ratio: 40
%)]

[0071]

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B3: 1 mol of the following phenol compound and 5-
Reaction product with 3 moles of NQD (esterification rate: 75
%)]

[0073]

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B4: 1 mol of the following phenol compound and 5-
Reaction product with 2 moles of NQD (esterification rate: 67
%)]

[0075]

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B5: Reaction product of 1 mol of 2,3,4-trihydroxybenzophenone and 2 mol of 5-NQD (esterification ratio: 67%)

B6: Reaction product of 1 mol of 2,3,4,4'-tetrahydroxybenzophenone and 3 mol of 5-NQD (esterification ratio: 75%)

C1: The following compound

[0079]

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C2: The following compound

[0081]

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C3: The following compound

[0083]

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C4: The following compound

[0085]

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C5: The following compound

[0087]

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C6: The following compound

[0089]

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C7: The following compound

[0091]

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[0092]

[Table 2]

As is clear from the results in Table 2, a photoresist composition containing a specific photosensitizer and a sensitivity improver is as follows:
It was found that there was no shrinkage and the sensitivity and resolution were excellent.

[0094]

According to the present invention, even when an ultrafine resist pattern of 0.35 .mu.m or less is formed, a resist pattern which is excellent in sensitivity and resolution and in which shrinkage when DOF is shaken is small. A positive photoresist composition that can be formed is provided.

Continuing on the front page (72) Inventor Kenji Maruyama 150 Nakamurako Nakahara-ku Kawasaki City Kanagawa Prefecture Inside Tokyo Ohka Kogyo Co., Ltd. (72) Inventor Kosuke Doi 150 Nakamaruko Nakahara-ku, Kawasaki-shi, Kanagawa F-term in Tokyo Keika Kogyo Co., Ltd. (reference) 2H025 AA01 AA02 AA03 AB16 AC08 AD03 BE01 CB42 CC20

Claims (5)

[Claims] 1. An alkali-soluble resin (A), and (B) a compound represented by the following general formula (I): (Wherein, R ^{1 to} R ⁸ each independently represent a hydrogen atom or an alkyl group having 1 to 3 carbon atoms),
And the following general formula (II): (Wherein, R ^{9 to} R ¹⁸ each independently represent a hydrogen atom, an alkyl group having 1 to 3 carbon atoms, or a cyclohexyl group).
A photosensitive component (esterified quinonediazide) containing an esterified product of a compound of any kind and a naphthoquinonediazidesulfonic acid compound, and (C) a compound represented by the following general formula (III): (Wherein x represents 0 or 1) A positive photoresist composition comprising a sensitivity enhancer containing at least one compound selected from the compounds represented by the following formulas: 2. The compound represented by the general formula (I) is represented by the following formula: 2. The positive photoresist composition according to claim 1, which is a compound represented by the formula: 3. The compound represented by the general formula (II) is represented by the following formula: 2. The positive photoresist composition according to claim 1, which is a compound represented by the formula: 4. The compound represented by the general formula (III) is represented by the following formula: 2. The positive photoresist composition according to claim 1, which is a compound represented by the formula: 5. The compound represented by the general formula (III) is represented by the following formula: 2. The positive photoresist composition according to claim 1, which is a compound represented by the formula: