JP2002280542A - Recording element utilizing positional movement of electron group, its manufacturing method, its operating method and recorder using it - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a recording device in which nonvolatile recording can be achieved with high density at high rate. SOLUTION: On the surface of a superstructural element body 11 integrating a large number of recording elements performing an ultrahigh rate recording operation by an arrangement where a holding body, i.e., an aggregate solid of atoms, ions and/or molecules, incorporates four or more movable electrons, the cooperative positional shift of an electron groups can be attained by an electric field and, as a result, the state of the aggregate solid including the electron group has two different controllable stable distribution positions 0 and 1, conductors 12 and 13 for applying an electric field selectively to each recording element are provided. Situations where the positional shift of the electron group takes place and does not take place upon the application of a field pulse are detected as an electric pulse signal, and a corresponding response signal pulse is applied as an electric pulse signal thus performing recording, nondestructive read out, recovery, erasure, and the like.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention accompanies the discovery of a specific case of a recording element utilizing the movement of the position of an electron group. The feature of this device is that it realizes non-volatile recording at ultra-high speed without using magnetic domain structure and magnetic field detection method, and is expected to realize ultra-high density recording. Development is expected. This is an epoch-making invention in that high-speed, high-density, non-volatile recording is realized without relying on magnetism, particularly under the progress of the IT revolution.

[0002]

2. Description of the Related Art Conventionally, a semiconductor integrated circuit represented by magnetic recording and an LSI has been known as a recording element. Magnetic recording is based on a core using a rectangular magnetic hysteresis curve.
In the days of memory devices, they are now concentrated on magnetic disks.

[0003]

The recording density of a magnetic disk is 10
A capacity of about 40 Gbytes (1 byte is 8 bits), which covers G bits / in ² , is commercially available. In this case, 1 bit in 2500 square
, Storage elements are integrated, but further improvement is desired. However, due to the principle restrictions of the domain structure,
It is almost at its limit and, furthermore, the magnetic disk is not a RAM (random access memory), and therefore has a decisive weakness in that its operation speed is slow. 256 M RAM using semiconductors
About byte is commercially available. However, the capacity is smaller than that of a magnetic disk. Generally, it is a volatile memory (volatile recording, the recording disappears when the power is turned off), and there is no high-speed, nonvolatile and large-capacity recording element at present. .

The present invention has been founded on the basis of the inventor's half-century of mainly physical experimental and theoretical studies. The present inventor has followed the path of experimental research focusing on magnetic physics, and is a representative researcher in Japan in research on transition metal oxides, particularly magnetite and Fe ₃ O ₄ , mainly on ferrite. The researcher has also promoted research that goes beyond international standards in theoretical studies of physics. As a result, a new framework has been created for electromagnetism, and from the condensed matter physics to the atomic nucleus, elementary particles, and astrophysics as a whole, Grand Unifying Frame for Physics (GUFP) has been established.
(See [English booklet] in the submitted document). From that point of view, in the world of quantum physics, we prove that classical physics concept (also called c-numerical physics) can be established within certain limits, and the concept of the present invention. I arrived.

An object of the present invention is to provide a recording element capable of achieving non-volatile recording at a very high speed and high density, a method of manufacturing the same, a method of operating the same, and a recording apparatus using such a recording element. It is.

[0006]

A recording element according to the present invention has a solid body composed of atoms, ions, and / or molecules as a holding body, has four or more movable electrons therein, and has a group of electrons. Cooperative position movement is possible by the electric field, and as a result, the state of the collective solid including the electron group has two controllable different stable distribution positions, 0, 1 and ultra-high-speed recording. It is characterized by performing an operation.

In such a recording element according to the present invention, a transition metal compound or a transition metal oxide can be used as the aggregated solid. When such an aggregated solid is used, a structure having an appropriate group of electrons can be obtained by creating an appropriate composite structure using a plurality of different-phase superstructures related to electronic phase transition as constituent units. There is. In particular, magnetite and Fe ₃ O ₄ can be used as the aggregated solid. In this case, use at a low temperature of 125K or less. In general, the recording element according to the present invention can be used while being held at a low temperature including liquid helium temperature and below, or at a high temperature above normal temperature.In the present invention, at least, magnetite and Fe ₃ O ₄ are used. It is important to point out that although the temperature is liquid air, the real element can be realized.

As described above, the recording element according to the present invention has a group of electrons that can move inside an aggregate of atoms, ions, and / or molecules, and the cooperative movement of the group of electrons is caused by an electric field. As a result, the state of the collective solid including the electron group is provided with two controllable different stable distribution positions, 0, 1; Instead of electrons, four or more movable protons, ions, or molecular charged particles can be used.

Further, the method of manufacturing a recording element according to the present invention is characterized in that an aggregate of atoms, ions, and / or molecules is used as a holding body, has four or more movable electrons therein, and cooperates with the group of electrons. Position shift is possible depending on the electric field, and as a result, the state of the collective solid including the electrons is
A magnetic field, an electric field, and / or a pressure / tensile force (isotropy) during the manufacturing process of the collective solid state of the recording element which performs an ultra-high-speed recording operation by having two different stable distribution positions, 0, 1 which can be controlled. And the use of anisotropic and ultrasonic waves) to obtain appropriate conditions.

[0010] Further, one of the methods for producing a recording element according to the present invention is to use a collective solid of atoms, ions, and / or molecules as a holding body, and have four or more movable electrons therein, The cooperative movement of the electron group is possible by the electric field, so that the state of the collective solid containing the electron group can be controlled by two controllable different stable distribution positions, 0, 1,
It is a recording element that performs ultra-high-speed recording operation by having, in order to obtain a structure with an appropriate group of electrons, a plurality of superstructures with different phases related to electronic phase transition as constituent units,
In producing a recording element having an appropriate composite structure, a base crystal is used, and an element material is grown thereon.

Further, one of the operation methods of the recording element according to the present invention is to use a collective solid of atoms, ions, and / or molecules as a holding body and to have four or more movable electrons therein. The cooperative movement of the electron group is possible by the electric field, so that the state of the collective solid containing the electron group can be controlled by two controllable different stable distribution positions, 0, 1,
By applying a magnetic field, an electric field, and / or pressure and tension (including isotropic and anisotropic, and using ultrasonic waves) during the operation of a recording element that performs ultra-high-speed recording by having It is characterized by gaining.

Further, the high-speed and high-density recording apparatus according to the present invention uses a solid body composed of atoms, ions, and / or molecules as a holding body, and has four or more movable electrons therein. Cooperative position movement is possible by the electric field, and as a result, the state of the collective solid including the electrons is
By having two controllable different stable distribution positions, 0 and 1, a large number of recording elements that perform ultra-high-speed recording operation are integrated, and an electric field can be selectively applied. The position movement is detected as a current, electric quantity, or voltage pulse signal when the pulse moves or not, and a response signal pulse corresponding to the detection is detected as a voltage, current, or electric quantity pulse. It is characterized by holding an electronic circuit for appropriate signal detection and transmission so that recording, non-destructive reading, erasing, and the like can be performed by applying the signal.

[0013]

DESCRIPTION OF THE PREFERRED EMBODIMENTS First, a basic theory will be described. The position of one particle, such as a specific electron, ion, atom, or molecule, in a solid has two different stable positions (one is metastable), and the position can be changed by an applied electric field, If the position can be detected, it is expected that the two positions can be designated as 0 and 1 and used for recording. And併, for one particle, room temperature, or in a temperature range to 10 2 ^K show first that there is no possibility.

First, in order for the electric field to be effective, the particles must have a charge. Now, if ± Ze, 1 ≦ Z ≦ 3
It will be rank. That particle is the normal distance between particles in a solid,
ΔX ~ (2-6) Å, Let's change the position by moving the degree. By the way, the thermal disturbance at the temperature T depends on its activation energy, ΔQ,

(Equation 1) Since it can be expected that it will come at about the frequency, if the average stabilization time is set to 100 years or more, the temperature T will be about room temperature (300K),

(Equation 2) Is obtained.

Therefore, if the final equation (2) is not satisfied, this element will not be thermally stable at room temperature. Then, in order to cover this ΔQ with the applied electric field and move the position of the particles,

(Equation 3) is necessary.

Now, when Δx ~ (2-6) Å is inserted,

(Equation 4) Is obtained.

However, now, the thickness of the element is 1 μm = 10 ⁻⁶ m
, The magnitude of the required voltage pulse is shown in volts. It requires a voltage of 1000 volts or more, which is practically impossible. When the operating temperature is lowered, (2)
Since the activation energy of the equation can be lowered, the evaluation of the equation (4) is somewhat relaxed, but at a temperature of about the liquid air temperature (−90 K), an improvement of one digit or more is impossible. However, at liquid hydrogen and liquid helium temperatures, and at very low temperatures, this limitation is eliminated. That point will be described later.

However, as will be described later, in the case of the present invention, it has been discovered that N electrons may cooperatively correlate and move in a coordinated manner. In this case, assuming that each of the N electrons crosses the peak of the potential, the condition of stability against thermal disturbance is (2)
Even if 1.3 eV in the equation is required, the height of the potential peak of one electron is 1 / N. Therefore, even if the moving distance of each electron, ΔX ~ (2-6) Å is invariable, the evaluation of Expression (4) is as follows.

(Equation 5) And change.

If the value is in the order of N to 1000, it is sufficiently within a practical range. Further, if the thickness of the element is not 1 μm = 10 ⁻⁶ m but 1000 ° = 10 ⁻⁷ m, even N to 100 is sufficiently practical. Of course, in these cases, lowering the operating temperature further increases the tolerance of the theoretical formula. Similar evaluations are expected to be established when charged particles cooperating with each other other than electrons (for example, protons, H ^+, etc.). ,
In the case of charged particles other than electrons, a problem of deposition of the particles on the electrode surface occurs, and the aging of the device is expected. Therefore, it is not practical as it is. However, if the AC operation mode is selected, or if the problem of deterioration is solved by vaporization or other methods on both the positive and negative surfaces such as in the case of H ⁺ , the principle of the present invention may be used. It is stated here that these cases are also within the scope of the present invention. Since the stability and the metastable state do not depend on the direction of the applied electric field, the use of an AC mode for changing the direction of the operating electric field at appropriate intervals is within a range of possibilities. In addition, the restriction that N is 4 or more restricts the minimum unit 4 according to the request that the electron group cooperates. Since the above evaluation is a function of temperature, if cryogenic temperature is used, N = 4
Also fall into the range of possibilities. (End of basic theory.)

It is well known that magnetite, Fe ₃ O ₄ , has an electronic phase transition near 125 K at low temperature. The present inventor is a representative researcher of this electronic phase transition (refer to the submitted booklet [English booklet]). At the 8th Filite International Conference held at the Kyoto International Convention Center, low temperature of magnetite An invited lecture on the metamorphic structure was given on September 18, 2000 (Presentation summary, p.27, 18CpII-3.), And the above-mentioned [English booklet] was distributed to those who wished to attend the conference at home and abroad. Was. Later, in the process of deepening the research, the concept of the present invention was reached. At that time, we refuse in advance that the new physics concept of integrated system physics created by the inventor played an important role in achieving the concept of the invention. It should be noted that researchers who belonged to the inventor and researchers of Fe ₃ O ₄ around the world naturally contribute to the present invention. Furthermore, experimental and theoretical studies by Kiichi Shiratori and Akira Yanase have made important contributions to cooperative collective behavior of electrons. Thank you for writing here.

Magnetite, Fe ₃ O ₄ , has a spinel crystal structure at room temperature, and its unit cell is composed of 8Fe ₃ O ₄ . Its structure

[Outside 1] Can be written. The first Fe ³⁺ ion is an ion located at the 8a position (also referred to as A site), and it is understood that its valence is unquestioned. Note that a crystal is understood as an ionic crystal, but the valence does not represent the electron density number within the ionic radius of the ion, but is a value of 2 from the oxygen ion.
Although a p-electron is also present at that position, for example, for an Fe ³⁺ ion, it is determined that the electron state of the 3d electron of the ion forms a spherical closed shell (3d) ⁵ with parallel spins. Meaning.

In the parentheses in the structural formula [1], 16
At the d-position (B site), where there is currently various discussions, Fe ³⁺ ion and Fe ²⁺ ion are 1: 1
And the theory that they are violently fluctuating thermally due to electron transfer, and the other is that, as in the case of metals, they are averaged and understood to be ^{Fe2.5 +} . Since this point is not important in this explanation, an expression based on the latter theory will be used for the time being. However, when magnetite is cooled, it depends on the purity and other factors, but at the highest, there is an electronic phase transition around 125 K, and the phase shifts to the low-temperature phase. This transition can be called a metal-nonmetal transition (Mott transition), and the electrical resistance is about 10
Increases by a factor of ^{two and} further increases with decreasing temperature.

Although the same problem as described above exists for the electronic state of the low-temperature phase, the present inventor has determined that the electronic state at the 16d position is an Fe ²⁺ ion-like ion and an Fe ³⁺ ion-like ion. They are clearly distinguished from ions and have been determined to form a regular lattice specific to the low-temperature phase. In the case of Fe ³⁺ ion, the electron orbit is almost spherical, and in the case of Fe ²⁺ ion, there is a contribution of orbital angular momentum. Point out that there is. However, there is currently no consensus on the location of each ion and the detailed situation of its deformation in the low-temperature phase. Therefore, the inventor has achieved the present invention using a theory based on the inventor's opinion, and the content of the invention will be described from that viewpoint.

It should be noted that the present invention is not particularly limited to magnetite, and therefore, the contents of the electronic ordered lattice structure relating to the low-temperature phase,
Even minor changes do not conflict with the invention. At the same time, it is certain that the present invention has occurred from the inventor's consideration of magnetite, so the content will be described from that viewpoint.

The 16d position, also called the B site, forms a three-dimensional "Kagome" lattice. The “Kagome” grid is based on grid points that make an equilateral triangle.
The side line is extended infinitely, and it is divided into the same units to form grid points. If two grid points have a unit length, they are connected and extended. This operation creates a two-dimensional "Kagome" lattice, which is a set of equilateral triangles. It is noted that a three-dimensional "Kagome" lattice is a structure in which (1/4) of all lattice points of a simple triangular lattice of a uniform set of equilateral triangles are missing. The three-dimensional "Kagome" lattice may take a regular tetrahedron as a basic unit of the same operation. The 16d position then becomes a collection of tetrahedrons, but inside the lattice, as in the two-dimensional "Kagome" lattice, there is a large empty space, and in the analogy with the "Kagome" lattice, Compared to the face-centered cubic lattice formed in such a case, (1/2) of all lattice points are absent, and in that space, Fe ³⁺ ions at the 8a site are present at just half the density. I'm here. Oxygen ions form a face-centered cubic lattice in contrast to the 16d position, have a structure with some deformation, and are distributed almost uniformly in the entire space. The fact that 16d lattice points are a set of straight lines, and large defect spaces without 16d lattice points are uniformly distributed with a density of about half and are blocking other routes is very important. It is an important factor in the invention.

At the 16d position, B site, there is Anderson condition. In the low temperature phase, Fe ³⁺ ion and Fe ²⁺ ion must be included in the tetrahedron in order to reduce electrostatic Coulomb energy. Must be present in a 2: 2 ratio. The present inventors also accept this view. However, this alone does not determine the structure of the ordered lattice of the low-temperature phase. The research group of the University of Tokyo physics department led by the inventor is the largest contributor
The determined structure is

[Outside 2] And has a unit cell four times as large as spinel (thus 32Fe
₃ 0 ₄ is included. Superstructure with)
But first there is the foundation. This structure shows a cubic unit cell of spinel in x, y, z coordinates, and if the length of the side is a, the c-axis is twice as large in the Z direction. , [1, -1, 0] and [1, 1, 0] directions

[Outside 3] Has the length of the a-axis and the b-axis, and as a result, its base area is doubled, so that the total unit cell is quadrupled.

The low-temperature phase after transformation is based on this structure, and further has a different phase superstructure (Anti-Phase Supe).
rstructure) are intertwined in a complex manner to form an organization. Heteromorphic superstructures are superstructures whose entire structure is the same as the original superstructure, but whose spatial position is different from the original superstructure. Is
It can be understood as a translation of the original superstructure, and a, b, c
If they are moved by an integer multiple of, this is exactly the same and is not an out-of-phase superstructure. However, when moved by a half-integer multiple, the positions of oxygen ions and metal ions as spinel structures completely overlap, but do not coincide as superstructures. The structure thus formed is a simple heterophase superstructure.

There is a different-phase superstructure further rotated, but this is not considered here. In this case, the origin of the superstructure based on (0, 0, 0) is set in units of a, b, and c, and the origin is set to [1/2, 0, 0], [0, 1/2,
0], [0, 0, 1/2], [0, 1 / 2,1 / 2], [1/2, 0, 1 /
2], [1/2, 1/2, 0] and [1/2, 1/2, 1/2] can be moved by 7 (8 in total) different-phase superstructures is expected. In these simple different-phase superstructures, if the reference phase structure is α-phase, the different-phase superstructure corresponding to the movement of (1/2, 1/2, 0) is the different-phase superstructure of γ phase. The two phases have a very good affinity for each other, and an α-γ coexisting superstructure having a boundary surface perpendicular to the b-axis is represented by α-γ-γ-α- ‥‥
Thus, it is concluded that a layer structure perpendicular to the b-axis direction is formed and the free energy (especially, the energy of microscopic distortion) of the entire crystal is automatically generated so as to be reduced.

[0029] FIG. 1 (a), magnetite, Fe ₃ 0 _4,
Inside the superstructure after the low-temperature electronic transformation of α-γ complex structure of the heteromorphic superstructure that is expected to appear microscopically and unavoidably. It is messy. That is, in the b-axis direction, the distribution of the sizes of the α and γ superstructures has no regularity in a natural state and is 1 to 1
It is irregularly distributed among the units at the 0-th position, and makes the symmetry of the whole crystal base symmetry. It is because the γ-phase superstructure is
This is because this corresponds to a state in which the α-phase superstructure has just been moved to the position of base symmetry. Of course, since the boundary surface at this time is formed by satisfying Anderson's condition, Coulomb
There is no energy consumption.

In this theoretical study of the inventor, furthermore,
The bottom of the α-phase superstructure, that is, the negative part of the c-axis is
If it is replaced with a different-phase superstructure having a γ-phase, three c-planes (ab-planes perpendicular to the c-axis) are boundary surfaces in a form satisfying Anderson's condition. However, FIG.
As shown in (b), the different phase superstructure having the γ phase is present at the bottom of the group of different phase superstructures having the α-γ phase formed in a layer shape perpendicular to the b-axis direction. If it is combined with the layered, γ-phase superstructure group, it becomes a form in which the α-phase different-phase superstructure group is inserted into the γ-phase superstructure like a yokan piece. A special boundary line is generated along the ridge line in the a-axis direction. Thus artificially, regularly the α phase in the γ-phase, but the expected structure when inserted into jelly flake is FIG. 1 (b), the key in the present invention, the Fe ³⁺ ions
The special boundary line where the Fe ²⁺ ions are alternately arranged is indicated by P in the figure.
Appears at Q and its six parallel boundaries.

When ions are carefully arranged so as not to violate Anderson's condition, this ridge line shows that Fe ³⁺ ion and Fe ³⁺ ion
^It can be seen that ²⁺ ions form a special boundary line that alternates. In this case, Anderson's condition is Fe ³⁺ -Fe
^{Even in the 2 +} -Fe ³⁺ -Fe 2 ⁺ -‥‥ series, the series is shifted one by one, Fe ²⁺ -Fe ³⁺ -Fe ²⁺ -Fe ³⁺ -‥‥
The condition does not collapse even in the series.

2 (a) and 2 (b) show Fe ³⁺ ions and Fe ³⁺ realized when the α phase is inserted in the form of yokan in the γ phase to constitute the PQ line of FIG. FIG. 3 illustrates two possible structures, with special boundaries interleaving ²⁺ ions. Only the Fe ion on the boundary line PQ in question and the Fe ion closest to it, which are located above and below in the c-axis direction, are shown. In the structure of FIG. 2A and the structure of FIG. 2B, there is a difference that the electron group on the PQ line moves by (1/4) a in the a-axis direction. However, Anderson's condition does not collapse.

The situation of the surrounding ion arrangement shown in FIGS. 2A and 2B is clearly different between the former and the latter. For example, ions arranged in a straight line are Fe ³⁺ ions on the one hand and Fe ²⁺ ions on the other hand. Therefore, if the former is [A] and the latter is [B], the structures [A] and [B] are obviously different, so their free energies are different, and the structures [A] and [B] are recorded. By associating with either 0 or 1, 0 and 1 can be recorded.

In this case, the conversion between 0 and 1 is possible by applying an electric field along this line. In addition, the difficulty of electron transfer due to the applied voltage is considered to depend on the length of the line. Therefore, the longer the voltage, the higher the voltage required, and the states [A] and [B] Is expected to increase stability.

For the reading of 0 and 1, the difficulty of the response accompanying the application of the electric field and the resulting current value and electric quantity value can be used. This will be described later in detail with reference to FIG. Of course, if the element is only PQ and one line, the result of the movement of the charge is one electron coming and going, and the detection requires extremely high accuracy. By appropriately arranging the superstructures, a large number of one-dimensional arrangements and a large number of two-dimensional arrangements can be formed. The minimum unit length of the vertical cross-section required for one element is the length of the nano region of several tens of mm or less. For example, even if ten elements are arranged in one line, it is several hundreds of mm. When ten rows are dimensionally parallelized, recording elements composed of 100 element units (thus, 100 electrons enter and exit from one recording element) are formed one by one in an area of several hundred squares. It becomes a thing. This degree of integration is much higher than that of the above-mentioned semiconductor integrated circuit or magnetic disk, and thus it is judged that the possibility of producing a large-capacity and nonvolatile recording element has been opened.

Note that this movement of the electron group is closely related to the change in ferroelectricity, but is distinguished from ferroelectricity as long as there is a flow of electrons through the electrodes. However, if electrons do not enter and exit the crystal within the crystal structure and this change occurs within a region, it is very similar to ferroelectricity. In fact, it is experimentally known that the low-temperature phase of Fe ₃ O ₄ has a ferroelectric property. Therefore, the concept of the present invention is closely related to ferroelectricity. It is a known fact that a ferroelectric substance piece can record 0 and 1 depending on the polarity of the polarity.

Various methods are conceivable for applying the electric field. For example, as shown in FIG. 3A, the simplest method is to use gold, silver, copper, nickel on the upper and lower surfaces of the element body 11 having the right side bc surface as the upper surface of the superstructure of FIG. If conductors 12 and 13 made of aluminum or the like are formed in a number of parallel strips, the upper surface is formed in the c-axis direction, the lower surface is formed in the b-axis direction, and a positive and negative voltage is applied to each of the upper and lower ones. The electric field concentrates on the element at the coincident point.

Various methods such as writing, nondestructive reading, and erasing by applying a voltage pulse can be considered, and a simple example is shown in FIG. FIG. 4A shows the situation of FIG. 2 using a simple potential curve. Anderson's Coulomb interaction in this figure means that electrons are forced to enter every other. FIG.
(B) shows a detection pulse voltage for reading, a corresponding current signal, and a situation in which a recovery pulse voltage is applied according to the signal. In response to the detection pulse, a current pulse signal is observed, reading is performed according to the observed pulse, and a non-destructive read is maintained.
Applied immediately. A part of the electronic circuit handling these voltage pulses is placed near the integrated device, but there is no problem in implementation since one is sufficient for all the integrated devices.

Read signal pulse (detection pulse, Detect
Pulse) (column), Response Pulse
The (column), the recovery pulse (column), and the erase pulse (Erase Pulse) (column) are all experimentally determined, and are determined to perform the most stable operation. However, a principle explanation will be given here. An example of the operation will be described with reference to FIG. The read signal pulse is composed of two pulse trains 21 and 2 having different voltage values.
2, first _{V 0,} then 2V ₀ is applied.

The response current pulses in the case of [A], since there deep stable position, it does not respond with a pulse of V _0, 2V
Responds with a pulse of ₀ and its response current signal pulse 2
3 is observed, and the state shifts from [A] to [B]. Details such as the read pulse height and pulse width are adjusted so that the electron group does not overshoot to the next [A] position. Overshoot doubles the current, so the signal can be used for recovery. Then, depending on the recovery pulse 24 of V _0, [B] →
Recovery to [A] progresses, and nondestructive reading ends.
In the case of [B], a signal current 25 is generated by the voltage pulse 21, the state shifts from [B] to [A], and a response pulse 26 is given in response to the voltage pulse 22, [A]
→ Recover to [B].

[0041] erase pulse (Erase Pulse) are all intended to bring to the [A] state, a simple V ₀ pulse 2
At 7, all [B] states transition to [A] states.

It should be noted that the principle discovered here, Fe
^{If the 3+} ions and the Fe ²⁺ ions are alternately arranged and the position of the surrounding electronic structure is different when the position is moved by one unit, the movement of the group of electrons can be induced by applying an electric field, The principle that 0 and 1 are arranged in the states of [A] and [B] and can be used as a recording element is a very general principle. Then, by the index of the crystal axis of spinel, a specific [0,
In the [1, 1] direction, there is a similar alternate arrangement on a straight line, and there is no such situation in the other <0, 1, 1> directions. Therefore, there is also a possibility that the simple superstructure itself [2] may be used as an aggregated solid holding a movable group of electrons according to the present invention.

Of course, in this case, since the whole of the superstructure crystal may become an element, it is necessary to devise a method of selecting the element according to a method of forming a conductor to which an electric field is applied. For example, FIG. 3B shows a case where conductors 14 and 15 made of gold, silver, copper, nickel, aluminum or the like are formed on the upper and lower surfaces of the element body 11 of the superstructure in a number of parallel strips. The lower surface is formed so as to be perpendicular to the specific [0, 1, 1] direction, and a large area is formed at the intersection of the upper and lower conductors so that the electric field can be applied efficiently. It is devised in.

Further, in the natural state, it is highly possible to form a mixed superstructure of α-γ. Therefore, although it is a problem of the electron arrangement inside the solid so as to form a desirable composite structure using a base crystal, etc. In a manner similar to growth, some contrivance may be required, such as to encourage the growth of the superstructure in the desired direction.
By the way, the linearity is broken at the α-γ boundary surface, but it is a broken line, but the shortest path that can be driven by the electric field (one Fe
Via the ⁽⁺⁾ ion. ) And continue. This point will be supplemented later.

In these cases, it is fully considered that the entire crystal undergoes ferroelectric ion shift. In the spinel structure, the ion at position 8a (Fe ³⁺ ion in this case) is tetrahedrally surrounded by O ²⁻ ions, and the center is cubic symmetric, but it is close to unstable equilibrium and the tetrahedron is deformed. Cubic symmetry is broken, and it is highly possible to perform ion shift cooperative with ferroelectricity. It is also within the scope of the present invention to utilize the ferroelectricity thus generated for reading a record or the like. All is there, depending on the experimental results, even clearly plurality of Fe ^{3 +} ions and Fe ²⁺ determining whether conversion is present being performed ions difficult, operates as an element, the If the possibilities are sufficient, it is specified that they are within the scope of the present invention.

In such a case, it is expected that the orbital state of the 3d electron of the Fe ²⁺ ion always changes.
The details are also difficult to detect, and regardless of the details, a recording element made in accordance with the principles of the present invention,
It is specified that the device is within the scope of the present invention as long as the necessary operation is maintained.

In the case of magnetite, it must be used at a low temperature of 125 K or less. However, the principles discovered here are generally applicable to transition metal compounds containing the same type of ion with different valences. Therefore, by appropriately selecting an appropriate compound and a method of forming the heteromorphic superstructure group, there is a sufficient possibility that an element that operates at room temperature will be formed. The reason is that 125 K and 300 K are not orders of magnitude different temperatures. In addition to 3d transition metal elements such as Sc, Ti, V, Cr, Mn, Fe, Co, Ni, and Cu, 4f rare earth metal elements such as Ce, Sm, Eu, and Yb, and 4d and 5d transition metal elements Furthermore, these combinations are also possible.

The same principle can work for different numbers of dissimilar ions. For example, Fe ⁽⁺⁾
And oxides containing Mn ⁽⁺⁾

[Outside 4] In this manner, there is a possibility that the present principle may form an effective electron transfer device. Again, regardless of their details, storage elements made in accordance with the principles of the present invention are within the scope of the present invention as long as they maintain their required operation.

In addition, the same principle is not limited to transition metal compounds. Even in a solid such as an organic molecule group, a large number of electrons or / and protons and ions, and furthermore, charged groups are
It is considered that the present invention can be applied if there is a solid that moves in a daisy chain at the same time when an electric field is applied. As explained in the basic theory, the limitation of a large number of electrons is due to the problem of having to withstand thermal disturbance, the technical possibility of applying an electric field, and the durability such as deterioration due to the deposition effect on the electrode surface. Thus, this method has been performed from the viewpoint of the feasibility of the detection method and the like. However, if these problems can be overcome by any method, it is expected that the method can be used.

In the above description of the present invention, the movement of the electrons is caused by the 16d of the spinel type crystal forming a specific straight line.
Although described as being limited to grid points, this description itself is
From the point of view of Integrated Mass Physics (GUFP), although allowed, the actual electron or / and ion transfer is within the solid, with all electrons or / and ions involved, It is usually done comprehensively and cooperatively. At that time, due to Pauli's principle, the total wave functions of the electrons and / or ions are completely correlated with each other, and it is not possible to extract the electrons or / and ions one by one.
Therefore, the above description is for convenience of description,
As a result, there is a stable or metastable state of the electrons and / or ions corresponding to 0 and 1 and / or ions, A and B, and the transition and detection between them is performed by applying an applied electric field and a current or an electric quantity pulse or a pulse train. Only the fact that this is done reliably has physical significance. The details such as the size and shape of the pulse at that time, the state of the response at that time, and the reversibility must be experimentally determined.

Further, the alternating arrangement on the straight line emphasized with Fe ₃ O ₄ is not always necessary, and it is sufficient if the arrangement is alternate even in a curved line and can be driven by an electric field. Moreover, even if the layout situation is not clear, it would suffice if a device with sufficient stability to fulfill the above role could be created experimentally. According to the inventor's GUFP physics, the correlation between electrons and / or ions in a solid is very tight, and even if the alternating curves include detours, the transformation of their configuration Is expected to be instantaneous. The reason for this is that the aggregated solids as electrons or / and ion carriers are themselves like seas of countless electrons or / and ions.

It is to be noted that this problem is due to the chemical
Relevant for physical (dislocation, etc.) purity issues. Electrons related to one recording element, and / or
When the number of ions is sufficiently large, some defects are allowed. However, if it is said that there are ten, of course, it is unacceptable. This problem of purity, like other electronic elements, is judged to be solved in association with the demand with the industrial development of this recording element. Therefore, like other industrial products, they are expected to be practically solved and developed in correlation with their prices and the like. The ultimate goal may be that ultimately complete purity is required, as long as the unit length of the occupied area includes the potential for devices with nanometers (10 ⁻⁹ m = 10 °).

Regarding the operating temperature, it is natural that an element having an operating temperature in a low temperature region occurs when electronic phase transition is used, and thermal noise is an important factor that determines the practicability of an electronic recording element. From this point, it is naturally expected that a low temperature is required. Of course, on the contrary, a case where the high temperature becomes the optimum temperature is expected. In these cases, Internet providers and the like judge that not only the use of the recording element required to maintain the low temperature such as the helium temperature but also the liquid air temperature is not particularly difficult.

When a ferromagnetic material such as Fe ₃ O ₄ is involved, a magnetic field or an electric field (pulse repetition becomes practical).
Further, application of pressure, tension, or the like may be necessary in order to optimize the conditions at the time of element creation or operation. It is a well-known fact that in the case of Fe ₃ O ₄ , the magnetic field and strain are effective in determining the (a, b, c) axis of the low-temperature superstructure. In addition, it is pointed out that ferroelectricity may be generated, and control by a magnetic field or an electric field may be required.

[Brief description of the drawings]

FIG. 1 (a) is an α-γ composite of a heterophase superstructure that is expected to appear microscopically and inevitably within the superstructure of magnetite and Fe ₃ O ₄ after low-temperature electronic transformation. (B) Artificially, the α phase is regularly arranged in the γ phase,
It shows the expected structure when inserted in the form of yokan flakes.
PQ is the boundary line that gave birth to the primitive concept of the present invention.

FIGS. 2 (a) and (b) show Fe ³⁺ ions and Fe ²⁺ realized when the α phase is inserted in the form of yokan in the γ phase to form the PQ line of FIG. 1. Two possible structures [A]: 0, with special boundaries where the ions alternate.
[B]: 1 is shown.

FIGS. 3A and 3B show two examples of a method of applying an electric field in the recording element of the present invention.

FIG. 4 (a) shows a simple potential display of the energy situation corresponding to 0 and 1 of the expected electron group in the recording element of the present invention, and FIG. 4 (b) detects the situation; FIG. 6 shows a simple example of a response current pulse by a simple detection voltage pulse and a non-destructive detection state thereof.

[Explanation of symbols]

 11 Superstructure element main body 12-15 Conductor 21-27 Voltage / current or electric quantity pulse

Claims (12)

[Claims] 1. A carrier comprising an aggregate of atoms, ions, and / or molecules having four or more movable electrons therein, and the cooperative movement of the group of electrons depends on an electric field. Is possible, and as a result, the state of the collective solid including the electron group can be controlled in two different stable distribution positions, 0,
1. A printing element characterized in that a super-high-speed printing operation is performed by having 1. 2. The recording element according to claim 1, wherein a transition metal compound is used as the aggregated solid. 3. The recording element according to claim 1, wherein a transition metal oxide is used as the aggregated solid. 4. To obtain a structure having an appropriate electron group,
4. The recording element according to claim 2, wherein an appropriate composite structure is created using a plurality of superstructures having different phases related to an electronic phase transition as constituent units. 5. The method according to claim 1, wherein the aggregated solid is magnetite, Fe
5. The recording element according to claim ₄ , wherein ₃ O ₄ is used at a low temperature of 125 K or less. 6. The recording element according to claim 1, wherein the recording element is used while being kept at a low temperature including a liquid helium temperature and below, or at a high temperature above ordinary temperature. 7. Instead of four or more movable electrons,
The recording element according to claim 1, wherein four or more movable protons, ions, or molecular charged particles are used. 8. A solid body composed of atoms, ions, and / or molecules, which has four or more movable electrons therein, and whose cooperative movement of the group of electrons depends on an electric field. Is possible, and as a result, the state of the collective solid including the electron group can be controlled in two different stable distribution positions, 0,
1, a magnetic field, an electric field, and / or
And pressure and tension (including isotropic and anisotropic, using ultrasonic)
To obtain appropriate conditions. 9. An aggregate of atoms, ions, and / or molecules is used as a holding body, which has four or more movable electrons therein, and the cooperative movement of the electrons depends on an electric field. Is possible, and as a result, the state of the collective solid including the electron group can be controlled in two different stable distribution positions, 0,
This is a recording element that performs ultra-high-speed recording operation by having 1, and in order to obtain a structure with an appropriate group of electrons, a plurality of superstructures with different phases related to electronic phase transition are used as constituent units A method of manufacturing a recording element, comprising: using a base crystal for growing an element material thereon when producing a recording element having an appropriate composite structure. 10. An aggregate of atoms, ions, and / or molecules is used as a holding body, which has four or more movable electrons therein, and the cooperative movement of the group of electrons depends on an electric field. It is possible, and as a result, the state of the collective solid including the electron group can be controlled by two different stable distribution positions,
In the operation of the recording element which performs an ultra-high-speed recording operation by having 0, 1, a magnetic field, an electric field, or / and a pressure / tensile force (including isotropic and anisotropic, using ultrasonic waves) are applied. An operation method of a recording element, wherein an appropriate condition is obtained. 11. A solid body composed of atoms, ions, and / or molecules as a support, having four or more movable electrons therein, and the cooperative movement of the group of electrons depending on an electric field. It is possible, and as a result, the state of the collective solid including the electron group can be controlled by two different stable distribution positions,
By having 0, 1, a large number of recording elements that perform an ultra-high-speed recording operation can be integrated, and an electric field can be selectively applied.
When the application of an electric field pulse and the movement of the position of an electron group occur with and without the pulse, the current, electric quantity,
Or, it is detected as a voltage pulse signal, and a response signal pulse corresponding to the detection is applied as a voltage, current, or electric quantity pulse, so that recording, reading, erasing, etc. can be performed, so that appropriate signal detection and And a high-speed, high-density recording apparatus characterized by holding an electronic circuit for transmission. 12. Use of cryogenics to move electrons,
12. The high-speed and high-density recording apparatus according to claim 11, wherein the number of charged particles of protons, ions, or molecular components is reduced to 4 or more and 10 or less to improve the degree of integration and reliability.