JP2002275678A - Whisker-free tin and tin alloy plating solution, printing film and plating object - Google Patents
Whisker-free tin and tin alloy plating solution, printing film and plating objectInfo
- Publication number
- JP2002275678A JP2002275678A JP2001057139A JP2001057139A JP2002275678A JP 2002275678 A JP2002275678 A JP 2002275678A JP 2001057139 A JP2001057139 A JP 2001057139A JP 2001057139 A JP2001057139 A JP 2001057139A JP 2002275678 A JP2002275678 A JP 2002275678A
- Authority
- JP
- Japan
- Prior art keywords
- tin
- plating solution
- plating
- bisphenol
- tin alloy
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/56—Electroplating: Baths therefor from solutions of alloys
- C25D3/60—Electroplating: Baths therefor from solutions of alloys containing more than 50% by weight of tin
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/30—Electroplating: Baths therefor from solutions of tin
- C25D3/32—Electroplating: Baths therefor from solutions of tin characterised by the organic bath constituents used
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Electroplating And Plating Baths Therefor (AREA)
- Electroplating Methods And Accessories (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、錫又は錫合金めっ
き液に関し、特にめっき被膜にウィスカーが生成しない
錫又は錫合金めっき液に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a tin or tin alloy plating solution, and more particularly to a tin or tin alloy plating solution in which no whiskers are formed on a plating film.
【０００２】[0002]
【従来の技術】従来、はんだ（Ｓｎ−Ｐｂ合金）は、電
気及び電子部品の作製に広範囲に亘って使用されてい
る。しかし、近年、廃棄された電子部品のはんだが酸性
雨等により溶出し、地下水の汚染源となっていることが
指摘されている。中でも、特に鉛は環境への影響が大き
いため、鉛を含有しない錫合金の開発が急務となってい
る。そこで、このような鉛を含まない錫合金として、Ｓ
ｎ−Ｚｎ合金、Ｓｎ−Ｂｉ合金等が提案されている。例
えば、特開平６−２２８７８６号公報には、ヒドロキシ
カルボン酸又はその塩を含有し、かつ、ｐＨが２．０以
上３．５未満であるＳｎ−Ｚｎ合金めっき浴が記載され
ている。また、特開平１１−１８１５８９号公報には、
はんだ付け性に優れ、鉛を含まない錫合金電気めっき液
が開示されている。この他、Ｓｎ、Ｓｎ−Ｃｕ合金、Ｓ
ｎ−Ａｇ合金、Ｓｎ−Ｉｎ合金、及び、これらの３元、
４元合金めっき等が注目されている。2. Description of the Related Art Conventionally, solder (Sn-Pb alloy) has been widely used for producing electric and electronic parts. However, in recent years, it has been pointed out that the solder of the discarded electronic components is eluted by acid rain or the like and is a source of groundwater contamination. Above all, lead has a great influence on the environment, and therefore, there is an urgent need to develop a tin alloy containing no lead. Therefore, as such a lead-free tin alloy, S
An n-Zn alloy, a Sn-Bi alloy and the like have been proposed. For example, JP-A-6-228786 describes a Sn-Zn alloy plating bath containing a hydroxycarboxylic acid or a salt thereof and having a pH of 2.0 or more and less than 3.5. Also, JP-A-11-181589 discloses that
A tin alloy electroplating solution having excellent solderability and containing no lead is disclosed. In addition, Sn, Sn-Cu alloy, S
n-Ag alloy, Sn-In alloy, and these three elements,
Attention has been paid to quaternary alloy plating and the like.
【０００３】[0003]
【発明が解決しようとする課題】ところが、上記のよう
な鉛を含まないはんだめっき液、特に錫めっき液又は錫
合金で亜鉛や銅を含むめっき液を用いてめっき被膜を成
膜すると、めっき被膜にはウィスカーと呼ばれるひげ状
の単結晶が発生しやすいという問題点がある。ウィスカ
ーの発生するめっき被膜を電子部品等に用いると、回路
や端子のショートを引き起こし、電子部品等の製品の性
能や信頼性を著しく低下させる結果となり、問題となっ
ていた。However, when a plating film is formed using a lead-free solder plating solution, particularly a tin plating solution or a plating solution containing zinc or copper in a tin alloy, the plating film is formed. Has a problem that a whisker-like single crystal called a whisker is easily generated. When a plating film with whiskers is used for an electronic component or the like, a short circuit or a terminal is caused, and the performance and reliability of a product such as an electronic component or the like are remarkably reduced.
【０００４】上記のように、ウィスカーはめっき製品に
おいて大きな問題となるため、これを取り除く目的でめ
っき被膜の熱処理が一般的に行われている。しかし、工
程が煩雑となり製造コストも高くなる。したがって、生
産性を向上させるため及びめっきを施した電子部品等の
信頼性を向上させるために、ウィスカーの発生しにくい
めっき液が望まれている。そこで、本発明の目的は、め
っき被膜の熱処理をしなくともウィスカーが発生しない
錫めっき液又は錫合金めっき液を提供することにある。[0004] As described above, whiskers are a major problem in plated products, and heat treatment of plating films is generally performed to remove them. However, the process becomes complicated and the manufacturing cost increases. Therefore, in order to improve productivity and to improve the reliability of plated electronic components and the like, a plating solution that does not easily generate whiskers is desired. Then, an object of the present invention is to provide a tin plating solution or a tin alloy plating solution in which whiskers are not generated even without heat treatment of a plating film.
【０００５】[0005]
【課題を解決するための手段】本発明者らは、上記のよ
うな実情に鑑み、錫めっき液又は錫合金めっき液に特定
の添加剤を加えることによって、ウィスカーが発生しな
いめっき被膜を形成できることを見出した。すなわち、
本発明によれば、錫又は錫合金めっき液であって、添加
剤として、ビスフェノールＡエチレンオキサイド付加
物、ビスフェノールＡプロピレンオキサイド付加物、ビ
スフェノールＦエチレンオキサイド付加物及びビスフェ
ノールＦプロピレンオキサイド付加物からなる群から選
ばれた少なくとも一種を含むことを特徴とするめっき液
が提供される。In view of the above circumstances, the present inventors have found that by adding a specific additive to a tin plating solution or a tin alloy plating solution, it is possible to form a plating film that does not generate whiskers. Was found. That is,
According to the present invention, there is provided a tin or tin alloy plating solution, wherein the additives include bisphenol A ethylene oxide adduct, bisphenol A propylene oxide adduct, bisphenol F ethylene oxide adduct and bisphenol F propylene oxide adduct. A plating solution characterized by containing at least one selected from the group consisting of:
【０００６】ウィスカー発生のメカニズムは多数提唱さ
れているが、結晶の格子歪みが大きい場合や、不純物が
多い場合に発生し易いことが原因として考えられる。本
発明者らはこの点に注目し、上記のような添加剤を錫め
っき液又は錫合金めっき液に添加することによって、ウ
ィスカーの発生のないめっき被膜が得られることを見出
した。これにより、めっき被膜の熱処理をしなくてもウ
ィスカーが発生しない被膜の形成が可能となる。Although many mechanisms of whisker generation have been proposed, it is considered that the whisker is likely to occur when the lattice distortion of the crystal is large or when there are many impurities. The present inventors have paid attention to this point, and have found that a plating film without generation of whiskers can be obtained by adding the above-described additive to a tin plating solution or a tin alloy plating solution. This makes it possible to form a coating that does not generate whiskers without heat treatment of the plating coating.
【０００７】本発明のめっき液に用いる添加剤は、具体
的には下記の構造式で示される、ビスフェノールＡエチ
レンオキサイド付加物、ビスフェノールＡプロピレンオ
キサイド付加物、ビスフェノールＦエチレンオキサイド
付加物及びビスフェノールＦプロピレンオキサイド付加
物のいずれかを用いる。めっき液中の添加剤の濃度は
０．０１〜１０ｇ／Ｌが好ましく、より好ましくは０．
１〜５ｇ／Ｌである。添加剤濃度が０．０１ｇ／Ｌを下
回ると、ウィスカー発生の防止効果が十分に得られな
い。一方で、添加剤濃度が１０ｇ／Ｌを上回ってもウィ
スカー発生を防止する効果はそれ以上高くはならない。The additives used in the plating solution of the present invention are specifically represented by the following structural formulas: bisphenol A ethylene oxide adduct, bisphenol A propylene oxide adduct, bisphenol F ethylene oxide adduct and bisphenol F propylene. Use any of the oxide adducts. The concentration of the additive in the plating solution is preferably from 0.01 to 10 g / L, more preferably from 0.1 to 10 g / L.
1 to 5 g / L. When the additive concentration is less than 0.01 g / L, the effect of preventing whisker generation cannot be sufficiently obtained. On the other hand, even if the additive concentration exceeds 10 g / L, the effect of preventing the generation of whiskers does not increase further.
【０００８】[0008]
【化１】 式中、Ｒ1は−Ｃ2Ｈ4−又は−Ｃ3Ｈ6−を示し、Ｒ2は−
Ｈ又は−ＣＨ3を示す。ｎ及びｍは整数であって、ｎ＋
ｍ＝１〜２０である。Embedded image In the formula, R 1 represents —C 2 H 4 — or —C 3 H 6 —, and R 2 represents —
H or an -CH 3. n and m are integers, and n +
m = 1-20.
【０００９】以下に、本発明のめっき液を実際にめっき
工程に用いる場合の好ましい条件について説明する。ま
ず、めっき浴に投入する本発明のめっき液の組成には、
金属塩、酸、添加剤、界面活性剤、溶剤、錯化剤、酸化
防止剤等が含まれる。Hereinafter, preferable conditions when the plating solution of the present invention is actually used in the plating step will be described. First, the composition of the plating solution of the present invention put into the plating bath includes:
Metal salts, acids, additives, surfactants, solvents, complexing agents, antioxidants and the like are included.
【００１０】金属塩としては、錫又は錫と合金を形成す
る亜鉛や銅等の金属の、酸化物、塩化物、硫酸塩及び有
機スルホン酸塩のいずれかを用いることができる。金属
塩の濃度は、金属濃度として１〜２００ｇ／Ｌが好まし
く、より好ましくは２〜１００ｇ／Ｌである。As the metal salt, any one of oxides, chlorides, sulfates, and organic sulfonates of tin or a metal such as zinc or copper which forms an alloy with tin can be used. The concentration of the metal salt is preferably from 1 to 200 g / L, more preferably from 2 to 100 g / L, as the metal concentration.
【００１１】酸としては、有機スルホン酸又は硫酸を用
いることができる。有機スルホン酸は、例えば、メタン
スルホン酸、エタンスルホン酸、メタノールスルホン
酸、エタノールスルホン酸、フェノールスルホン酸、ナ
フトールスルホン酸等を挙げることができる。これら酸
の濃度は１〜３００ｇ／Ｌが好ましく、より好ましくは
５〜２００ｇ／Ｌである。As the acid, an organic sulfonic acid or sulfuric acid can be used. Examples of the organic sulfonic acid include methanesulfonic acid, ethanesulfonic acid, methanolsulfonic acid, ethanolsulfonic acid, phenolsulfonic acid, and naphtholsulfonic acid. The concentration of these acids is preferably from 1 to 300 g / L, more preferably from 5 to 200 g / L.
【００１２】界面活性剤は、析出結晶を微細化しかつ均
一化するという効果を奏し、また、錫合金めっきを施す
場合には、酸化還元電位の差が大きい錫と合金成分金属
元素との電位差を小さくして、合金組成品位を安定化す
るという効果も奏する。界面活性剤としては、ノニオン
性界面活性剤、例えばポリオキシエチレンノニルフェニ
ルエーテル、フェノールエチレンオキサイド付加物、ナ
フトールエチレンオキサイド付加物等を用いることがで
きる。界面活性剤の濃度は、０．０１〜１０ｇ／Ｌが好
ましく、より好ましくは０．０５〜５ｇ／Ｌである。The surfactant has the effect of making the deposited crystals finer and more uniform, and when tin alloy plating is performed, the potential difference between tin having a large difference in oxidation-reduction potential and the alloying element metal element is reduced. By reducing the size, the effect of stabilizing the quality of the alloy composition is also exerted. As the surfactant, a nonionic surfactant such as polyoxyethylene nonyl phenyl ether, phenol ethylene oxide adduct, naphthol ethylene oxide adduct and the like can be used. The concentration of the surfactant is preferably from 0.01 to 10 g / L, more preferably from 0.05 to 5 g / L.
【００１３】溶剤としては、メタノール、エタノール、
プロパノール、ブタノール等を用いることができる。溶
剤の濃度は、５〜１５０ｇ／Ｌが好ましく、より好まし
くは５〜１００ｇ／Ｌである。As the solvent, methanol, ethanol,
Propanol, butanol and the like can be used. The concentration of the solvent is preferably from 5 to 150 g / L, more preferably from 5 to 100 g / L.
【００１４】錯化剤としては、カルボン酸又はその塩を
用いることができる。カルボン酸は、例えばクエン酸、
酒石酸、リンゴ酸、マロン酸、ＥＤＴＡ等を挙げること
ができる。錯化剤の濃度は１０〜３００ｇ／Ｌが好まし
く、より好ましくは２０〜２００ｇ／Ｌである。As the complexing agent, a carboxylic acid or a salt thereof can be used. Carboxylic acids include, for example, citric acid,
Tartaric acid, malic acid, malonic acid, EDTA and the like can be mentioned. The concentration of the complexing agent is preferably from 10 to 300 g / L, more preferably from 20 to 200 g / L.
【０００１５】酸化防止剤としては、カテコール、ピロ
カテコール、レゾルシノール、ヒドロキノン、ピロガロ
ール、ヒドロキシルアミン等を用いることができる。こ
れら酸化防止剤の濃度は０．０５〜１０ｇ／Ｌが好まし
く、より好ましくは０．１〜５ｇ／Ｌである。As an antioxidant, catechol, pyrocatechol, resorcinol, hydroquinone, pyrogallol, hydroxylamine and the like can be used. The concentration of these antioxidants is preferably from 0.05 to 10 g / L, more preferably from 0.1 to 5 g / L.
【００１６】次に、めっき処理条件について説明する。
めっき浴温度は５〜９０℃が好ましく、より好ましくは
２０〜７０℃がよい。２０℃未満では、被めっき先端部
に粗い結晶が析出し、かつ、合金組成品位にばらつきが
生じ好ましくない。一方９０℃を超えると、界面活性剤
の濁りが生じるため好ましくない。めっき液のｐＨは７
以下が好ましく、より好ましくは４以下である。ｐＨが
７を超えると、めっき被膜に粗い結晶が析出するため好
ましくない。めっき液の電流密度は０．１〜１５０Ａ／
ｄｍ2が好ましく、より好ましくは０．５〜１００Ａ／
ｄｍ2である。電流密度が０．１Ａ／ｄｍ2未満では合金
成分元素の析出が抑制されるため、合金のめっきを施す
場合には好ましくない。一方１５０Ａ／ｄｍ2を超える
と、めっき被膜の外観が不良となるため好ましくない。Next, plating conditions will be described.
The plating bath temperature is preferably 5 to 90C, more preferably 20 to 70C. If the temperature is lower than 20 ° C., coarse crystals are precipitated at the tip of the plating target, and the quality of the alloy composition varies, which is not preferable. On the other hand, if it exceeds 90 ° C., the surfactant becomes turbid, which is not preferable. PH of plating solution is 7
Or less, more preferably 4 or less. If the pH exceeds 7, coarse crystals are precipitated on the plating film, which is not preferable. The current density of the plating solution is 0.1 to 150 A /
dm 2 is preferable, and more preferably 0.5 to 100 A /
dm 2 . If the current density is less than 0.1 A / dm 2 , the precipitation of alloy component elements is suppressed, which is not preferable when plating an alloy. On the other hand, if it exceeds 150 A / dm 2 , the appearance of the plating film becomes poor, which is not preferable.
【００１７】[0017]
【発明の実施の形態】以下に、実施例を用いて本発明の
めっき液について具体的に説明する。 （実施例１〜４）実施例１〜４では、後述する表１に示
した浴組成及びめっき条件で、被めっき物の上にめっき
を施した。被めっき物には、２．５×２ｃｍの真鍮板を
用いた。めっきに先立って、真鍮板を温度５０℃、電流
密度５Ａ／ｄｍ2で、６０秒間アルカリ電解脱脂し、そ
の後、５％の硫酸を用いて室温で１０秒間洗浄した。得
られためっき物について、次の４項目についてそれぞれ
めっき被膜を評価した。評価の結果は、後述する表３に
示した。 （１）外観 目視によって、めっきの外観を
評価した。 （２）ウィスカー１ 室温の室内でめっき物を１年放
置し、そのめっき被膜を１００倍の顕微鏡で観察し、ウ
ィスカーの有無を判定した。 （３）ウィスカー２ ８５℃、湿度８５％の恒温恒湿
槽内でめっき物を一ヶ月放置し、そのめっき被膜を１０
０倍の顕微鏡で観察し、ウィスカーの有無を判定した。 （４）合金組成 めっき被膜の合金組成を分析し
た。 （５）はんだ濡れ性 はんだ浴として６／４錫―鉛は
んだを使用した。浴温を２４０℃とし、フラックスとし
て２０％ロジン−イソプロパノール溶液を使用した。こ
れらの条件で、メニスコグラフ法によりゼロクロスタイ
ムを測定した。DESCRIPTION OF THE PREFERRED EMBODIMENTS The plating solution of the present invention will be specifically described below with reference to examples. (Examples 1 to 4) In Examples 1 to 4, plating was performed on an object to be plated under the bath composition and plating conditions shown in Table 1 described below. A 2.5 × 2 cm brass plate was used as an object to be plated. Prior to plating, the brass plate was subjected to alkaline electrolytic degreasing at a temperature of 50 ° C. and a current density of 5 A / dm 2 for 60 seconds, and then washed with 5% sulfuric acid at room temperature for 10 seconds. About the obtained plating, the plating film was evaluated about the following four items, respectively. The results of the evaluation are shown in Table 3 below. (1) Appearance The appearance of the plating was visually evaluated. (2) Whisker 1 The plating was left in a room at room temperature for one year, and the plating film was observed under a microscope of 100 times to determine the presence or absence of whiskers. (3) Whisker 2 Leave the plated product in a constant temperature and humidity chamber of 85 ° C. and 85% humidity for one month,
Observation was performed with a microscope of 0 magnification to determine the presence or absence of whiskers. (4) Alloy composition The alloy composition of the plating film was analyzed. (5) Solder wettability 6/4 tin-lead solder was used as a solder bath. The bath temperature was 240 ° C., and a 20% rosin-isopropanol solution was used as a flux. Under these conditions, the zero cross time was measured by the meniscograph method.
【００１８】[0018]
【表１】 [Table 1]
【００１９】（比較例１〜４）比較例１〜４では、それ
ぞれ、実施例１〜４のめっき浴組成において添加剤を加
えなかった以外は実施例１〜４と同様にめっき液を調製
した。これらのめっき液を用いて、後述する表２に示し
ためっき条件で、実施例１〜４と同様に真鍮板にめっき
を施した。その後、これらのめっき物は実施例１〜４と
同様の評価を行い、評価結果は実施例の結果とあわせて
後述する表３に示した。(Comparative Examples 1 to 4) In Comparative Examples 1 to 4, plating solutions were prepared in the same manner as in Examples 1 to 4, except that no additives were added to the plating bath compositions of Examples 1 to 4. . Using these plating solutions, a brass plate was plated in the same manner as in Examples 1 to 4 under the plating conditions shown in Table 2 described below. Thereafter, these plated articles were evaluated in the same manner as in Examples 1 to 4, and the evaluation results are shown in Table 3 described later together with the results of the examples.
【００２０】[0020]
【表２】 [Table 2]
【００２１】[0021]
【表３】 [Table 3]
【００２２】評価結果から明らかなように、比較例１〜
４で作製しためっき物は全てウィスカーが発生したが、
本発明のめっき液を用いた実施例１〜４のめっき物で
は、全くウィスカーの発生が見られなかった。さらに、
実施例１〜４のめっき物は外観も、はんだ濡れ性も良好
な結果を示した。As is clear from the evaluation results, Comparative Examples 1 to
Whiskers were generated in all of the plating products prepared in step 4,
No whiskers were generated in the plated products of Examples 1 to 4 using the plating solution of the present invention. further,
The plated products of Examples 1 to 4 exhibited good appearance and good solder wettability.
【００２３】[0023]
【発明の効果】本発明の錫めっき液又は錫合金めっき液
を用いれば、めっき被膜の熱処理を行わなくとも、ウィ
スカー発生のないめっき物が得られる。したがって、こ
のめっき物を電子部品等に用いても、回路や端子のショ
ートを生ずることがなく、信頼性の高い製品を提供でき
る。さらに、工程を短縮でき、製造コストも低くするこ
とができる。このような錫めっき物又は錫合金めっき物
は、信頼性が向上できるのみならず、はんだ濡れ性も良
好で、電気・電子部品に好適に用いられる。By using the tin plating solution or the tin alloy plating solution of the present invention, a plated product free of whiskers can be obtained without heat treatment of the plating film. Therefore, even if this plated product is used for an electronic component or the like, a short circuit of a circuit or a terminal does not occur and a highly reliable product can be provided. Further, the number of steps can be reduced, and the manufacturing cost can be reduced. Such tin-plated products or tin-alloy-plated products not only can improve the reliability but also have good solder wettability, and are suitably used for electric and electronic parts.
Claims (5)
として、ビスフェノールＡエチレンオキサイド付加物、
ビスフェノールＡプロピレンオキサイド付加物、ビスフ
ェノールＦエチレンオキサイド付加物及びビスフェノー
ルＦプロピレンオキサイド付加物からなる群から選ばれ
た少なくとも一種を含むことを特徴とするめっき液。1. A tin or tin alloy plating solution, wherein as an additive, a bisphenol A ethylene oxide adduct,
A plating solution comprising at least one selected from the group consisting of bisphenol A propylene oxide adduct, bisphenol F ethylene oxide adduct, and bisphenol F propylene oxide adduct.
ホン酸系錫又は有機スルホン酸系錫合金めっき液である
ことを特徴とする請求項１に記載のめっき液。2. The plating solution according to claim 1, wherein the tin or tin alloy plating solution is an organic sulfonic acid tin or organic sulfonic acid tin alloy plating solution.
又は硫酸系錫合金めっき液であることを特徴とする請求
項１に記載のめっき液。3. The plating solution according to claim 1, wherein the tin or tin alloy plating solution is a tin sulfate or tin alloy plating solution.
っき液を用いて成膜したウィスカーフリーの錫又は錫合
金めっき被膜。4. A whisker-free tin or tin alloy plating film formed by using the plating solution according to claim 1. Description:
っき液を用いて成膜したウィスカーフリーの錫又は錫合
金めっき被膜を有するめっき物。5. A plating product having a whisker-free tin or tin alloy plating film formed by using the plating solution according to claim 1. Description:
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001057139A JP2002275678A (en) | 2001-01-11 | 2001-03-01 | Whisker-free tin and tin alloy plating solution, printing film and plating object |
| CN01807193A CN1420946A (en) | 2001-01-11 | 2001-10-24 | Whisker-free tin or tin alloy plating solution, plating film and plated article |
| KR1020027011400A KR20020082857A (en) | 2001-01-11 | 2001-10-24 | Whisker-free tin or tin alloy plating solution, plating film and plated article |
| PCT/JP2001/009323 WO2002055763A1 (en) | 2001-01-11 | 2001-10-24 | Whisker-free tin or tin alloy plating solution, plating film and plated article |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001-3639 | 2001-01-11 | ||
| JP2001003639 | 2001-01-11 | ||
| JP2001057139A JP2002275678A (en) | 2001-01-11 | 2001-03-01 | Whisker-free tin and tin alloy plating solution, printing film and plating object |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2002275678A true JP2002275678A (en) | 2002-09-25 |
Family
ID=26607531
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001057139A Withdrawn JP2002275678A (en) | 2001-01-11 | 2001-03-01 | Whisker-free tin and tin alloy plating solution, printing film and plating object |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP2002275678A (en) |
| KR (1) | KR20020082857A (en) |
| CN (1) | CN1420946A (en) |
| WO (1) | WO2002055763A1 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2006016603A1 (en) * | 2004-08-10 | 2006-02-16 | Dipsol Chemicals Co., Ltd. | Tin-zinc alloy electroplating method |
| US7314784B2 (en) | 2003-03-19 | 2008-01-01 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor and manufacturing method thereof |
| JP2008001947A (en) * | 2006-06-22 | 2008-01-10 | Yuken Industry Co Ltd | Tin alloy plating film in which generation of whisker is suppressed and method for forming the same |
| JP2009035768A (en) * | 2007-08-01 | 2009-02-19 | Taiyo Kagaku Kogyo Kk | Tin electroplating solution and method for electronic component and tin-electroplated electronic component |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100457977C (en) * | 2004-08-03 | 2009-02-04 | 上海新阳半导体材料有限公司 | Electroplating additive and its preparation method |
| CN103882484B (en) * | 2014-04-04 | 2016-06-29 | 哈尔滨工业大学 | High-speed tin plating plating solution |
| JP7035821B2 (en) * | 2018-06-05 | 2022-03-15 | トヨタ自動車株式会社 | Method of forming a metal solution for film formation and a metal film |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3429894B2 (en) * | 1995-03-20 | 2003-07-28 | 株式会社大和化成研究所 | Tin-bismuth alloy electroplating bath |
| JP4186029B2 (en) * | 1998-10-05 | 2008-11-26 | 石原薬品株式会社 | Abnormal crystal precipitation inhibitor in tin or tin alloy plating film on copper foil substrate and method for preventing the same |
-
2001
- 2001-03-01 JP JP2001057139A patent/JP2002275678A/en not_active Withdrawn
- 2001-10-24 WO PCT/JP2001/009323 patent/WO2002055763A1/en not_active Application Discontinuation
- 2001-10-24 CN CN01807193A patent/CN1420946A/en active Pending
- 2001-10-24 KR KR1020027011400A patent/KR20020082857A/en not_active Application Discontinuation
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7314784B2 (en) | 2003-03-19 | 2008-01-01 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor and manufacturing method thereof |
| WO2006016603A1 (en) * | 2004-08-10 | 2006-02-16 | Dipsol Chemicals Co., Ltd. | Tin-zinc alloy electroplating method |
| JP2006052431A (en) * | 2004-08-10 | 2006-02-23 | Dipsol Chem Co Ltd | Tin-zinc alloy electroplating method |
| JP4594672B2 (en) * | 2004-08-10 | 2010-12-08 | ディップソール株式会社 | Tin-zinc alloy electroplating method |
| JP2008001947A (en) * | 2006-06-22 | 2008-01-10 | Yuken Industry Co Ltd | Tin alloy plating film in which generation of whisker is suppressed and method for forming the same |
| JP2009035768A (en) * | 2007-08-01 | 2009-02-19 | Taiyo Kagaku Kogyo Kk | Tin electroplating solution and method for electronic component and tin-electroplated electronic component |
| JP4632186B2 (en) * | 2007-08-01 | 2011-02-16 | 太陽化学工業株式会社 | Tin electrolytic plating solution for electronic parts, tin electrolytic plating method for electronic parts and tin electrolytic plated electronic parts |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2002055763A1 (en) | 2002-07-18 |
| KR20020082857A (en) | 2002-10-31 |
| CN1420946A (en) | 2003-05-28 |
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