JP2002246585A - Quantum calculation element - Google Patents

Abstract

PROBLEM TO BE SOLVED: To easily form silicon single crystal fine particles while separation/ contact with electron cloud is easily controlled. SOLUTION: Silicon single crystal fine particles 14-17 are almost constantly spaced on a silicon oxide film 12. A top of each of the silicon single crystal fine particles 14-17 is connected to a polycrystal silicon film 18. Phosphorus atoms (donor atoms) 31-34 are put in the silicon single crystal fine particles 14-17, respectively. Metal electrodes 20-23 are formed on the silicon single crystal fine particles 14-17, respectively, with metal electrodes 24-27 formed among them. Although the silicon single crystal fine particles 14-17 do not directly contact each other, electric potentials applied to the metal electrodes 20-27 allow exchange of atomic nucleus spin among a plurality of phosphorus atoms 31-34 with an electron as a medium.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a quantum operation device that executes an operation by utilizing the interaction between an electron spin and a nuclear spin.

[0002]

2. Description of the Related Art In recent years, with the development of fine processing technology,
Mass production of semiconductor integrated circuits having a minimum processing line width of 80 nm to 150 nm has become possible. In the future, the generation of the fine processing technology will be updated every three to four years, and a development plan of a semiconductor integrated circuit having a minimum processing line width of about 30 nm has been made. At the experimental level, a minimum processing line width of about 10 nm has already been made possible.

On the other hand, in the field of solid state physics, it is known that a so-called electron-nucleus double resonance phenomenon occurs between a nucleus of an impurity atom in a solid and an electron captured by the nucleus. I have.

Conventionally, as a solid-state device utilizing the above-described electron-nuclear double resonance phenomenon, a device having a device structure shown in FIG. 3 has been proposed. In FIG. 3, 1 is a gate electrode, 2,
3 is an insulator layer, 4 is silicon single crystal fine particles, and 5 is a support substrate. The silicon atoms of the silicon single crystal fine particles 4 are
It consists only of isotopes ²⁸ Si and ³⁰ Si having a nuclear spin quantum number of 0, and isotope ²⁹ Si having a nuclear spin quantum number of 1/2.
Has been removed.

[0005] Further, donor atomic nuclei 6 are introduced into the silicon single crystal fine particles 4. The natural isotope of the phosphorus atom is 100% ³¹ P, and the nuclear spin quantum number is ２. Therefore, by using the nucleus of a phosphorus atom as the donor nucleus 6 introduced into the silicon single crystal fine particles 4, the nuclear spin can be measured. Reference numeral 7 denotes a probability density of a wave function of electrons bound to the silicon single crystal fine particles 4 (a so-called electron cloud, hereinafter referred to as an electron cloud).

[0006] Under a static magnetic field B ₀ , the energy level of an ion is mainly determined by the Zeeman energy splitting of the electron level. That is, the electron spin quantum number _ms = ± 1 /
2 determines a high energy level and a low energy level. Hyperstructural interactions cause the energy levels to break up further. That is, at the spin quantum number m _l = ± 1/2 of the nucleus, it is divided into a high energy level and a low energy level. There are two types of electron transitions, which have a nuclear spin quantum number of _ml.
= − / And m _l = + /.
Assuming that the frequencies of the respective transitions are ω ₁ and ω ₂ , ω ₁ = γB ₀ −
aπ / h, ω ₂ = γB ₀ + aπ / h. Note that ω ₁ is _ml =
-1/2 a m _s = transitions between ± 1/2 when the, omega ₂ is a transition between the m _s = ± 1/2 in the case of m _l = + 1/2.
Here, a is a hyperfine structure constant, γ is a constant, a gyromagnetic ratio, and h is a Planck constant.

In such a state, the sum of the nuclear spin angular momentum of the donor nucleus 6 and the electron spin angular momentum of the electron is stored according to the angular momentum conservation law. The electron spin and the nuclear spin have a correlation with each other by a so-called hyperfine structure interaction (for example, Kittel, "Introduction to Solid State Physics (below)", Maruzen).

[0008] As is well known, spin is a physical quantity quantized into two states, and can have a quantum number of +1/2 and -1/2. As a result, when the solid-state device shown in FIG. 3 is placed in a constant static magnetic field, a difference in spin appears as a difference in resonance frequency. Therefore, when one of the information “0” and the information “1” is assigned to the spin quantum numbers “+＋ １” and “− /” of the phosphorus nucleus, the resonance frequency is measured. It is possible to know the contents of the information stored in the solid state device.

FIG. 3 shows a state where the potential of the gate electrode 1 in the solid-state device is increased. In this case, the electron cloud 7 is drawn to the gate electrode 1 side.

As described above, in the solid-state device shown in FIG. 3, by controlling the potential of the gate electrode 1,
The electron cloud 7 can be separated from the electron cloud 7 in the adjacent silicon single crystal fine particles 4, and each silicon single crystal fine particle 4 can be controlled independently. Therefore,
By forming the silicon single crystal fine particle rows 4, 4,..., It is possible to adjust the magnitude of the exchange interaction between the nuclear spins in the adjacent silicon single crystal fine particles 4. That is, for example, the spin state of the nucleus 6 of the donor atom (phosphorus atom) can be transmitted to the nucleus 6 ′ of the adjacent donor atom. Therefore, a desired calculation operation can be performed by giving an appropriate potential operation procedure.

[0011]

However, the above-mentioned conventional solid-state devices have the following problems. That is,
In the solid-state device, in order to connect the plurality of silicon single-crystal fine particles 4 to form the silicon single-crystal fine-particle rows 4, 4,... The single crystal particles 4, 4 must be grown so as to be in contact with each other, and there are remarkable restrictions on crystal growth conditions. Further, since the shape of the present solid-state element is also limited by the diameter of the silicon single crystal fine particles 4,
They cannot be arranged freely on a plane.

Further, in order to separate the electron clouds 7 from each other by controlling the potential of the gate electrode 1, the contact area and contact position between the silicon single crystal fine particles 4 must be controlled very accurately. There is. Therefore, an extremely accurate manufacturing technique is required, and there is a practical problem.

SUMMARY OF THE INVENTION It is an object of the present invention to provide a quantum operation device in which single-crystal silicon fine particles can be easily formed and the separation and contact between electron clouds can be easily controlled.

[0014]

In order to achieve the above object, a quantum operation device according to the present invention comprises a first insulating film formed on a substrate and an arrangement on the first insulating film with an interval therebetween. A second insulating film formed on the first insulating film so as to expose a part of the silicon single crystal fine particles and to fill a gap;
A polycrystalline silicon film formed on the insulating film and in contact with the silicon single crystal fine particles exposed from the second insulating film; and a third insulating film formed on the polycrystalline silicon film. A first metal electrode formed at a position of each of the silicon single crystal particles on the third insulating film, and a second metal formed at a position between each of the first metal electrodes on the third insulating film An electrode is provided, and each of the silicon single crystal fine particles contains a phosphorus atom as an impurity.

According to the above configuration, each of the plurality of silicon single crystal fine particles is connected by the polycrystalline silicon film to form one silicon single crystal fine particle row. Therefore, when a negative potential is applied to the second metal electrode formed at a position between the silicon single crystal particles, the electron cloud associated with each phosphorus atom is moved away from the second metal electrode. Can no longer exist in polycrystalline silicon,
The silicon single crystal fine particles are individually confined in each of the above silicon single crystal fine particles. On the other hand, when no potential is applied to the second metal electrode, the electron cloud spreads in the polycrystalline silicon film. Therefore, by controlling the potentials of the first and second metal electrodes, it is possible to exchange nuclear spins between a plurality of phosphorus atoms using electrons as a medium.

Further, the silicon single crystal fine particles are arranged with an interval therebetween and connected by the polycrystalline silicon film. Therefore, there is no restriction on the formation position of the silicon single crystal fine particles, and the silicon single crystal fine particles are easily formed.

Further, the first embodiment is characterized in that in the quantum operation device of the present invention, silicon atoms constituting the silicon single crystal fine particles are composed of isotopes ²⁸ Si and ³⁰ Si. I have.

According to this embodiment, the silicon atoms of the silicon single crystal fine particles are composed of only isotopes ²⁸ Si and ³⁰ Si having a nuclear spin quantum number of 0, and an isotope having a nuclear spin quantum number of 1/2. Body ²⁹ Si is not included. Therefore, a difference in nuclear spin from a phosphorus atom whose natural isotope has ³¹ P of 100% and a nuclear spin quantum number of 1/2 can be easily detected.

Further, the second embodiment is characterized in that in the quantum operation device of the present invention, the diameter of each silicon single crystal fine particle is 10 nm or less.

According to this embodiment, since the diameter of each silicon single crystal fine particle is 10 nm or less, the energy level of the surplus electrons accompanying the donor nucleus takes a discrete value due to the quantum mechanical effect, It is bound by the energy level. Thus, contact ultrafine structure interactions can occur without cooling to cryogenic temperatures.

A third embodiment is characterized in that, in the quantum operation device of the present invention, the polycrystalline silicon film is formed so as to cover the entire row of the silicon single crystal fine particles.

According to this embodiment, since the polycrystalline silicon film is formed so as to cover the entire row of the silicon single crystal fine particles, each of the silicon single crystal fine particles is
It is easily and reliably connected to the polycrystalline silicon film.
Thus, one operation is performed by the polycrystalline silicon film, the silicon single crystal fine particle row connected to the polycrystalline silicon film, and the first and second metal electrodes formed on the silicon single crystal fine particle row. The circuit is configured.

The fourth embodiment is directed to a quantum operation device according to the present invention, in which a row of silicon single crystal fine particles connected to the polycrystalline silicon film and first and second fine particles formed thereon are formed.
A plurality of circuit blocks each including a metal electrode are arranged.

According to this embodiment, a plurality of circuit blocks having the same configuration are arranged on the same substrate. Therefore, when a plurality of circuit blocks are simultaneously operated to generate the same signal in order to obtain a large signal by the contact ultrafine structure interaction, it is easy to control the voltage applied to the first and second metal electrodes. Become.

[0025]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the present invention will be described in detail with reference to the illustrated embodiments.

<First Embodiment> FIG. 1 is a schematic sectional view of a quantum operation device according to the present embodiment. On single silicon oxide film 12 formed on the surface of silicon substrate 11, silicon single crystal fine particles 14 to 17 are arranged at substantially equal intervals. Further, the second silicon oxide film 12
A silicon oxide film 13 is formed and silicon single crystal fine particles 1
4 to 17 are buried in the second silicon oxide film 13 with their tops exposed. A polycrystalline silicon film 18 is formed on the second silicon oxide film 13 and each of the silicon single crystal fine particles 14 to 17, and is covered with a third silicon oxide film 19. Further, the third silicon oxide film 19
Metal electrodes 20 to 23 are formed at the positions of the silicon single crystal fine particles 14 to 17 above. Further, metal electrodes 24 to 27 are formed between the metal electrodes 20 to 23 on the third silicon oxide film 19.

The silicon single crystal fine particles 14 to 17 contain phosphorus atoms 31 to 34 as donor atoms, and each of the phosphorus atoms 31 to 34 has one extra electron that does not contribute to the covalent bond. I do. And the phosphorus atoms 31 to
The electrons that have detached from 34 are free electrons, but when a negative voltage is applied to the metal electrodes 24 to 27, the electrons are moved away from the metal electrodes 24 to 27 and are present in the polycrystalline silicon film 18. become unable. As a result, the electron cloud accompanying each of the phosphorus atoms 31 to 34 is spatially confined in each of the silicon single crystal fine particles 14 to 17, and can exist only near the phosphorus atoms 31 to 34 like bound electrons. It is.

On the other hand, when the potential applied to the metal electrodes 24 to 27 is set to “0”, since there is nothing that hinders the movement of electrons, the electron cloud accompanying each of the phosphorus atoms 31 to 34 is large. It spreads in the crystalline silicon film 18 and overlaps each other.

Therefore, by controlling the potentials of the metal electrodes 20 to 23 and the metal electrodes 24 to 27, it is possible to exchange nuclear spins between a plurality of phosphorus atoms 31 to 34 using electrons as a medium. It becomes.

The silicon single crystal fine particles 14 to 17 can be formed by, for example, a method disclosed in Japanese Patent Application Laid-Open No. 11-97667. Further, as a method for forming the metal electrodes 20 to 23 and the metal electrodes 24 to 27, they can be formed by photolithography in the same manner as in a normal integrated circuit.

The quantum operation device according to the present embodiment has a contact hyperfine structure interaction (e.g., a contact hyperfine structure) between a donor nucleus and an electron as in the case of the solid-state device shown in FIG.
Use fineinteraction). For this purpose, the silicon constituting the silicon single crystal fine particles 14 to 17 is an isotope
It must consist of only ²⁸ Si and ³⁰ Si.

Hereinafter, the contact ultrafine structure interaction will be described with respect to one silicon single crystal fine particle 14 in FIG. Considering polar coordinates with the origin of the position of the nucleus of the donor atom (phosphorus atom) 31, the electron wave function can be expressed as a function ψ (r). Here, r is the distance from the origin. The intensity of the contact hyperfine interaction energy between the donor nucleus and the electron is r = 0
Electronic existence probability in | ψ (0) | proportional to ^2. Therefore, to increase the contact hyperfine structure interaction energy, the existence probability | ψ (0) | ² of electrons must be increased.

In a bulk silicon single crystal, electrons at room temperature are free electrons, and the existence probability | ψ (0) | ² is practically zero. In this case, if the entire device is kept at an extremely low temperature, electrons can be bound to donor nuclei, and a sufficiently large existence probability | ψ (0) | ² can be obtained. Typically, T is kept at about 100 mK in absolute temperature. At this temperature, the electrons have the lowest energy level (s state)
Is bound to. By the way, this binding force is weak,
The excitation energy to the excitation level is about 15 meV, which is about 174 K in terms of temperature.

In the present embodiment, due to its structure, electrons are confined inside silicon single crystal fine particles 14. As a result, the electrons are bound by the potential well formed by the silicon single crystal fine particles 14 without keeping the entire device at an extremely low temperature. The wave function of an electron bound in a particle having a radius a becomes the ground state when the quantum size effect occurs because the radius a is sufficiently small.
The wave function in the (s state) is represented by ψ (r) = Nj ₀ (r / a) (1). Here, j ₀ is a zero-order spherical Bessel function j ₀ (x) = sin (x) (1 / x) (2), and has a maximum at x = 0. After all, the existence probability of the electron at r = 0 is | ψ (0) | ² ∝a ^−3, and therefore, in this embodiment, the radius a of the fine particle is
By sufficiently reducing, the existence probability | ψ (0) | ² can be increased.

The energy difference ΔE between the first excitation level and the ground level in the s state is about 130 meV when the radius of the element is 5 nm as a typical element size.
Converted to absolute temperature, it becomes 1508K. That is, the binding force of electrons can be increased by sufficiently reducing the radius a of the fine particles. Here, the mass is m = (m where m _{eo is} the rest mass of the electron, m _{t is} the transverse mass, and m _eff is the effective mass.
_eff · m _t ²⁾ using a ^1/3 = ^0.3216m _eo, analytically determined from the radius vector equation of equation Schrodinger with V ₀ = 3.15 eV as depth of the potential barrier at r = a Was.

The quantum operation device according to the present embodiment is configured by adding a basic device including silicon single crystal fine particles 14 to 17 exhibiting such contact ultrafine structure interaction. Therefore, the contact ultrafine structure interaction can be stably generated in each basic element.

As described above, in the quantum operation device according to the present embodiment, silicon single crystal fine particles 14 to 17 are arranged at substantially equal intervals on the silicon substrate 11 with the silicon oxide film 12 interposed therebetween. Fine particles 14-17
Are connected to the polycrystalline silicon film 18. Each of the silicon single crystal fine particles 14 to 17 contains phosphorus atoms 31 to 34 as donor atoms. Accordingly, by reducing the radius of each of the silicon single crystal fine particles 14 to 17 to about 5 nm, the energy difference ΔE between the first excitation level and the ground level in the s state can be reduced by ΔE = 130 meV by the contact hyperfine structure interaction. And electrons can be more stably kept in the ground state than in a bulk silicon single crystal.

Each of the silicon single crystal fine particles 14-
The top of 17 is connected to a polycrystalline silicon film 18 formed on each of the silicon single crystal fine particles 14 to 17. Further, metal electrodes 20 to 23 are formed on each of the silicon single crystal fine particles 14 to 17 with a silicon oxide film 19 interposed therebetween, and metal electrodes 24 to 27 are formed between the metal electrodes 20 to 23. Therefore, when the potentials of the metal electrodes 24 to 27 are “0”, the electron cloud associated with each of the phosphorus atoms 31 to 34 can extend to the polycrystalline silicon film 18 and overlap each other. In addition, metal electrodes 24-2
When the potential of 7 is “negative”, the electron cloud associated with each of the phosphorus atoms 31 to 34 is confined inside the silicon single crystal fine particles 14 to 17.

That is, according to the present embodiment, even if the silicon single crystal fine particles 14 to 17 are not in direct contact with each other at a large distance, there is no practical problem and the metal electrode 20 is fine.
23 to 23 and the potentials applied to the metal electrodes 24 to 27 can exchange nuclear spins among the plurality of phosphorus atoms 31 to 34 using electrons as a medium.

The quantum operation device according to the present embodiment does not need to form the silicon single crystal fine particles 14 to 17 so as to be in contact with each other. Therefore, each of the silicon single crystal fine particles 14 to 17 can be easily formed.

<Second Embodiment> In this embodiment, a quantum operation comprising a plurality of sets of silicon single crystal fine particle rows 14 to 17 connected by the same polycrystalline silicon film 18 in the first embodiment is described. Related to the element.

FIG. 2 shows a cross-sectional structure of the quantum operation device according to the present embodiment. On the first silicon oxide film 42 formed on the surface of the silicon substrate 4l, silicon single crystal fine particles 44a to 46c embedded in the second silicon oxide film 43 and exposing the tops are formed. The tops of the silicon single crystal fine particles 44 a to 44 c are connected by a polycrystalline silicon film 47 formed on the second silicon oxide film 43. Similarly, each silicon single crystal fine particle 4
The tops of 5a to 45c are connected by a polycrystalline silicon film 48, and the tops of the silicon single crystal fine particles 46a to 46c are connected by a polycrystalline silicon film 49.

Further, the whole is covered with a third silicon oxide film 50, and metal electrodes 51a to 51c are formed on the third silicon oxide film 50 at positions corresponding to the silicon single crystal fine particles 44a to 44c, respectively. Each metal electrode 5
Metal electrodes 54a and 54b are formed between 1a to 51c. Similarly, the metal electrodes 52a to 52c and the metal electrodes 55a and 55c correspond to the silicon single crystal fine particles 45a to 45c, respectively.
b is formed, and the metal electrodes 53a to 53c and the metal electrodes 56a, 56c correspond to the respective silicon single crystal fine particles 46a to 46c.
6b is formed.

Thus, the silicon single crystal fine particle row 4
4. A circuit block 57 is composed of the polycrystalline silicon film 47 and the metal electrode rows 51 and 54,
5. A circuit block 58 is composed of the polycrystalline silicon film 48 and the metal electrode rows 52 and 55,
6. The circuit block 59 is composed of the polycrystalline silicon film 49 and the metal electrode rows 53 and 56.

Since the signal generated by the interaction of the contact ultrafine structure is weak, it is necessary to operate a large number of identical circuits simultaneously to generate the same signal. In the first embodiment, it is possible to realize a plurality of identical circuits on one arithmetic element by controlling the pattern of the potential applied to the metal electrode. However, when the degree of integration is large, the signal pattern control of the applied potential becomes complicated.

According to the present embodiment, circuit blocks 57 to 59 having the same structure are formed on the same silicon substrate 41 by being divided for each of the polycrystalline silicon films 47, 48 and 49. Therefore, for example, each circuit block 57
When the plurality of circuit blocks 57 to 59 having the same configuration are simultaneously operated to generate the same signal by, for example, connecting metal electrodes at the same position in Control becomes easier.

In the quantum operation devices according to the first and second embodiments, it is necessary to continuously apply a static magnetic field to the entire device when the nuclear spin is operated by utilizing the contact hyperfine interaction. .

Therefore, as in the first and second embodiments, if the integrated circuit chip on which the quantum operation element is formed is sandwiched between the magnetic chips by using the ordinary integrated circuit technology and bonded, the integrated circuit chip can be formed in the integrated circuit chip. It is possible to stably apply a static magnetic field to the embedded quantum operation element. When only the integrated circuit chip on which the quantum operation element in the first and second embodiments is formed is mounted on a circuit board, the entire circuit board may be sandwiched by a magnetic material and bonded. .

[0049]

As is clear from the above, the quantum operation device of the present invention has a plurality of silicon single crystal fine particles arranged on a first insulating film formed on a substrate at intervals.
The gap is filled with the second insulating film so as to expose a part of the silicon single crystal fine particles, the polycrystalline silicon film is brought into contact with the exposed portion of each silicon single crystal fine particle, and the polycrystalline silicon film is formed on the third insulating film covering the upper part. A first metal electrode is formed at a position of each silicon single crystal fine particle, a second metal electrode is formed at a position between each first metal electrode, and each of the silicon single crystal fine particles contains a phosphorus atom as an impurity. Therefore, when a negative potential is applied to the second metal electrode, the electron clouds associated with the respective phosphorus atoms are individually confined in the respective silicon single crystal fine particles. On the other hand, when the potential is not applied, it spreads in the polycrystalline silicon film and overlaps each other. Therefore, by controlling the potentials of the first and second metal electrodes, it is possible to exchange nuclear spins between a plurality of phosphorus atoms using electrons as a medium.

Each of the silicon single crystal fine particles is arranged with an interval therebetween and connected by the polycrystalline silicon film. Therefore, there is no restriction on the formation position of the silicon single crystal fine particles, and the silicon single crystal fine particles can be easily formed. Further, since the silicon single crystal fine particles of the entire chip can be connected by the polycrystalline silicon film, only non-defective silicon single crystal fine particles can be selectively used by a signal given to the metal electrode after the chip is formed.

In the quantum operation device of the first embodiment, the silicon atoms constituting the silicon single crystal fine particles are composed of the isotope ²⁸ Si and the isotope ³⁰ Si. The silicon atom of the crystal fine particles does not contain the isotope ²⁹ Si having a nuclear spin quantum number of ２. Therefore, it is possible to easily detect a difference in nuclear spin from a phosphorus atom in which a natural isotope has ³¹ P of 100% and a nuclear spin quantum number of 1/2.

Further, in the quantum operation device of the second embodiment, since the diameter of each silicon single crystal fine particle is set to 10 nm or less, the energy order of the surplus electrons accompanying the donor nucleus becomes a discrete value due to the quantum mechanical effect. And bound to the lowest energy level. Therefore, the contact ultrafine structure interaction can be generated without cooling to an extremely low temperature.

In the quantum operation device according to the third embodiment, the polycrystalline silicon film is formed so as to cover the entire row of the silicon single crystal fine particles. One arithmetic circuit can be easily and reliably connected to the film, and constituted by the polycrystalline silicon film, the silicon single crystal fine particle row, and the first and second metal electrodes.

The quantum operation device according to the fourth embodiment comprises a single-crystal silicon microparticle array connected to the polycrystalline silicon film and first and second metal electrodes formed thereon on the same substrate. Since a plurality of circuit blocks having the same configuration are arranged, the same operation is performed when the plurality of circuit blocks are simultaneously operated to generate the same signal in order to obtain a large signal by the contact ultrafine structure interaction. The voltage applied to the first and second metal electrodes can be easily controlled.

[Brief description of the drawings]

FIG. 1 is a schematic sectional view of a quantum operation device of the present invention.

FIG. 2 is a diagram illustrating a cross-sectional structure of a quantum operation device different from FIG.

FIG. 3 is a diagram showing a cross-sectional structure of a conventional solid-state device utilizing an electron-nuclear double resonance phenomenon.

[Explanation of symbols]

11, 41: silicon substrate, 12, 42: first silicon oxide film, 13, 43: second silicon oxide film, 14 to 17, 44a to 44c, 45a to 45c, 46a to 46c
... Silicon single crystal fine particles, 18,47,48,49 ... Polycrystalline silicon film, 19,50 ... Third silicon oxide film, 20-23,24-27,51a-51c, 52a-52c, 5
3a to 53c, 54a, 54b, 55a, 55b, 56a, 56b: metal electrodes, 31 to 34: phosphorus atoms, 57, 58, 59 ... circuit blocks.

Claims (5)

[Claims] A first insulating film formed on a substrate; silicon single crystal fine particles arranged on the first insulating film at intervals from each other; and a silicon single crystal fine particle on the first insulating film. A second insulating film formed so as to expose a part of the crystal fine particles and fill the gap; and a second insulating film formed on the second insulating film and formed from the second insulating film in each of the silicon single crystal fine particles. A polycrystalline silicon film in contact with the exposed portion; a third insulating film formed on the polycrystalline silicon film; and a first insulating film formed on the third insulating film at a position of each of the silicon single crystal fine particles. A metal electrode; and a second metal electrode formed at a position between the first metal electrodes on the third insulating film, wherein each of the silicon single crystal fine particles contains a phosphorus atom as an impurity. The quantum operation element characterized by the above-mentioned. 2. The quantum operation device according to claim 1, wherein the silicon atoms constituting the silicon single crystal fine particles are composed of isotope ²⁸ Si and isotope ³⁰ Si. . 3. The quantum operation device according to claim 1, wherein a diameter of each of the silicon single crystal fine particles is 10 nm or less. 4. The quantum operation device according to claim 1, wherein the polycrystalline silicon film is formed so as to cover the entire row of the silicon single crystal fine particles. Quantum operation element. 5. The quantum operation device according to claim 1, wherein a row of silicon single crystal fine particles connected to the polycrystalline silicon film and first and second fine particles formed thereon are formed. A quantum operation device comprising a plurality of circuit blocks each including two metal electrodes.