JP2002246408A - Heater dowel for wire bonding - Google Patents

Heater dowel for wire bonding

Info

Publication number
JP2002246408A
JP2002246408A JP2001037398A JP2001037398A JP2002246408A JP 2002246408 A JP2002246408 A JP 2002246408A JP 2001037398 A JP2001037398 A JP 2001037398A JP 2001037398 A JP2001037398 A JP 2001037398A JP 2002246408 A JP2002246408 A JP 2002246408A
Authority
JP
Japan
Prior art keywords
heater
diamond
wire bonding
die pad
dowel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001037398A
Other languages
Japanese (ja)
Inventor
Teiji Hirashima
悌司 平嶋
Kenichiro Miyazaki
賢一郎 宮崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Noritake Co Ltd
Noritake Super Abrasive Co Ltd
Original Assignee
Noritake Co Ltd
Noritake Super Abrasive Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Noritake Co Ltd, Noritake Super Abrasive Co Ltd filed Critical Noritake Co Ltd
Priority to JP2001037398A priority Critical patent/JP2002246408A/en
Publication of JP2002246408A publication Critical patent/JP2002246408A/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0555—Shape
    • H01L2224/05552—Shape in top view
    • H01L2224/05554—Shape in top view being square
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
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    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301—Capillary
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    • H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
    • H01L2224/8518—Translational movements
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    • H01L2224/852—Applying energy for connecting
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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

PROBLEM TO BE SOLVED: To improve precision in wire bonding by suppressing adhesion of a plating metal to a heater dowel, used for wire bonding in manufacturing steps of a semiconductor device. SOLUTION: The heater dowel for wire bonding comprises a die pad support part A and an inner lead support part B of the heater dowel 6 to which plated metal M easily adheres and is formed of diamond sintered materials 61a and 61b or a diamond-like carbon thin film 62, formed over the entire surface of an upper surface of the dowel 6.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【０００１】[0001]

【発明の属する技術分野】本発明は半導体装置の製造工
程におけるワイヤボンディング作業に使用するヒータコ
マに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a heater top used for a wire bonding operation in a semiconductor device manufacturing process.

【０００２】[0002]

【従来の技術】半導体装置の製造工程におけるワイヤボ
ンディング作業は、概略以下のようにして行われる。図
３はダイパッド上の半導体素子とリードフレームを示す
図で、１は半導体素子、２は半導体素子１の電極、３は
リードフレーム４のインナーリード、５は半導体素子１
を搭載するダイパッドである。図４はリードフレームを
加熱するヒータを示す図で、６はヒータコマ、７はヒー
タブロック、８は抵抗加熱素子であり、ワイヤボンディ
ング作業時にリードフレーム４はヒータコマ６上に配置
される。半導体装置の品種によってリードフレーム４の
形状が変わるので、半導体装置の品種によってヒータコ
マ６を交換してワイヤボンディング作業を行う。2. Description of the Related Art A wire bonding operation in a manufacturing process of a semiconductor device is generally performed as follows. FIG. 3 is a diagram showing a semiconductor element and a lead frame on a die pad, 1 is a semiconductor element, 2 is an electrode of the semiconductor element 1, 3 is an inner lead of the lead frame 4, and 5 is a semiconductor element 1.
This is a die pad equipped with. FIG. 4 is a view showing a heater for heating the lead frame, 6 is a heater piece, 7 is a heater block, 8 is a resistance heating element, and the lead frame 4 is arranged on the heater piece 6 during wire bonding work. Since the shape of the lead frame 4 changes depending on the type of the semiconductor device, the wire bonding operation is performed by exchanging the heater pieces 6 according to the type of the semiconductor device.

【０００３】図５はワイヤボンディング作業の手順を示
す図である。ボンディングツール９から突出させた金線
１０の先端を、電気トーチ１１との放電により溶融させ
て金球１２を形成する（図５の（ａ）および（ｂ））。
次にボンディングツール９をヒータブロック７によって
加熱された半導体素子１の電極２上に降下させ、ボンデ
ィングツール９により電極２に超音波振動を加えなが
ら、金球１２を電極２と接合する（図５の（ｃ））。次
にボンディングツール９をヒータブロック７によって加
熱されたインナーリード３上に移動させ、ボンディング
ツール９によりインナーリード３に超音波振動を加えな
がら接合を行う（図５の（ｄ））。接合は金線１０と接
合部金属との拡散によるものであり、高温であるほど拡
散は促進される。しかし高温になるほど半導体素子への
ダメージが大きくなるので、通常２５０〜３００℃で行
われる。FIG. 5 is a diagram showing a procedure of a wire bonding operation. The tip of the gold wire 10 protruding from the bonding tool 9 is melted by electric discharge with the electric torch 11 to form a gold ball 12 (FIGS. 5A and 5B).
Next, the bonding tool 9 is lowered onto the electrode 2 of the semiconductor element 1 heated by the heater block 7, and the gold ball 12 is bonded to the electrode 2 while applying ultrasonic vibration to the electrode 2 by the bonding tool 9 (FIG. 5). (C)). Next, the bonding tool 9 is moved onto the inner lead 3 heated by the heater block 7, and bonding is performed while applying ultrasonic vibration to the inner lead 3 with the bonding tool 9 ((d) in FIG. 5). The bonding is based on the diffusion between the gold wire 10 and the bonding metal, and the higher the temperature, the more the diffusion is promoted. However, the higher the temperature, the greater the damage to the semiconductor element.

【０００４】図６はワイヤボンディング装置の要部を示
す図である。ワイヤボンディング作業時には、ヒータコ
マ６上にリードフレーム４を配置し、クランプ１３で押
さえて固定する。そしてヒータブロック７によってヒー
タコマ６上の半導体素子１の電極２とリードフレーム４
のインナーリード３を加熱し、金線１０によって接続す
る。FIG. 6 is a diagram showing a main part of a wire bonding apparatus. At the time of the wire bonding operation, the lead frame 4 is arranged on the heater piece 6 and fixed by being clamped by the clamp 13. The electrode 2 of the semiconductor element 1 on the heater block 6 and the lead frame 4 are heated by the heater block 7.
Is heated and connected by a gold wire 10.

【０００５】このような手順によりワイヤボンディング
作業を行うのであるが、近年、電子回路の高集積化およ
び半導体装置の小型化に伴い、リードフレーム４のイン
ナーリード３の幅やピッチが小さくなる傾向にあるた
め、ワイヤボンディング作業に要求される精度も高まっ
ており、この精度向上のために各種の手段が講じられて
いる。[0005] The wire bonding operation is performed according to such a procedure. In recent years, the width and the pitch of the inner leads 3 of the lead frame 4 tend to decrease with the increase in the integration of electronic circuits and the miniaturization of semiconductor devices. For this reason, the accuracy required for the wire bonding operation is also increasing, and various measures are being taken to improve the accuracy.

【０００６】たとえば特開平１−２３１３３４号公報に
は、ヒータブロックに凸部、クランプ治具に凹部を設け
ることによってリードフレームを塑性変形させて固定
し、超音波トランスデューサの超音波振動によるボンデ
ィングの位置ずれを防止する方法が記載されている。ま
た特開平６−２６８０３２号公報には、ヒータブロック
の熱影響により超音波トランスデューサが伸縮した際
に、共振周波数から伸縮量を算出することによりワイヤ
ボンド位置を補正する方法が記載されている。また特開
平９−２１３８７０号公報には、リードフレームのダイ
パッドおよび吊りリードが嵌入するヒータブロックの彫
り込み部の色を他の部分と識別可能に色分けし、ダイパ
ッドおよび吊りリードが正確に位置決めされているかど
うかを２値化識別する方法が記載されている。For example, Japanese Patent Application Laid-Open No. 1-231334 discloses that a lead frame is plastically deformed and fixed by providing a convex portion on a heater block and a concave portion on a clamp jig, and a bonding position by ultrasonic vibration of an ultrasonic transducer. A method for preventing displacement is described. Japanese Patent Application Laid-Open No. 6-268032 describes a method of correcting the wire bond position by calculating the amount of expansion and contraction from the resonance frequency when the ultrasonic transducer expands and contracts due to the thermal influence of the heater block. Japanese Patent Application Laid-Open No. 9-21870 discloses that the engraved portion of the heater block into which the die pad and the suspension lead are fitted is color-coded so as to be distinguishable from other portions, and that the die pad and the suspension lead are correctly positioned. A method of binarizing and discriminating whether or not it is described is described.

【０００７】[0007]

【発明が解決しようとする課題】上記のような方法によ
り、ワイヤボンディングの位置を正確にするための努力
がなされているが、このような超音波トランスデューサ
の位置ずれや半導体素子のセッティングに起因する位置
ずれのほかに、ヒータコマに起因する位置ずれがある。Efforts have been made to make the position of wire bonding accurate by the above-mentioned method. However, due to the displacement of the ultrasonic transducer and the setting of the semiconductor element, such an attempt has been made. In addition to the displacement, there is a displacement caused by the heater top.

【０００８】前述したように半導体素子１の電極２やリ
ードフレーム４のインナーリード３には、ボンディング
ツール９によって超音波振動が加えられる。このため、
半導体素子１を搭載するダイパッド５やインナーリード
３もこれに合わせて振動し、ヒータコマ６に強く擦り付
けられる。ダイパッド５には半導体素子１を搭載する際
に使用するハンダとの接着性を向上させるためにＰｂ−
Ｓｎ、Ａｇなどのメッキが施されている。また、インナ
ーリード３には金線１０との接合性を向上させることを
目的として同様のメッキが施されている。したがって、
ダイパッド５やインナーリード３がヒータコマ６に強く
擦り付けられると、これらのメッキの一部が剥がれてヒ
ータコマ６に付着する。図７はヒータコマへのメッキ金
属の付着状態を示す図であり、ダイパッド支持部分Ａお
よびインナーリード支持部分Ｂにメッキ金属Ｍが付着す
る。ヒータコマ６にメッキ金属Ｍが付着して蓄積される
と、ダイパッド５やインナーリード３に干渉して位置ず
れが生じ、ワイヤボンディングが正常に行われないこと
になる。As described above, the ultrasonic vibration is applied to the electrodes 2 of the semiconductor element 1 and the inner leads 3 of the lead frame 4 by the bonding tool 9. For this reason,
The die pad 5 and the inner lead 3 on which the semiconductor element 1 is mounted also vibrate accordingly, and are strongly rubbed against the heater piece 6. In order to improve the adhesiveness to the solder used when the semiconductor element 1 is mounted on the die pad 5, Pb-
The plating of Sn, Ag, etc. is performed. The inner leads 3 are plated in the same manner for the purpose of improving the bondability with the gold wire 10. Therefore,
When the die pad 5 and the inner lead 3 are strongly rubbed against the heater top 6, a part of the plating is peeled off and adheres to the heater top 6. FIG. 7 is a diagram showing a state of the plating metal adhered to the heater piece. The plating metal M adheres to the die pad supporting portion A and the inner lead supporting portion B. If the plating metal M adheres and accumulates on the heater piece 6, it interferes with the die pad 5 and the inner lead 3, causing a displacement, and the wire bonding is not performed properly.

【０００９】また、ワイヤボンディング作業時にはクラ
ンプ１３によってリードフレーム４を上から押さえて固
定するので、ヒータコマ６にメッキ金属Ｍが付着してい
るとリードフレーム４が変形するおそれがある。リード
フレーム４が変形すると、次工程で半導体素子１やイン
ナーリード３を樹脂封止する際に、これらが正常な位置
にセットされず、パッケージの反りや金線１０の露出な
どの問題が生じる。Further, during the wire bonding operation, since the lead frame 4 is pressed down from above and fixed by the clamp 13, if the plating metal M adheres to the heater piece 6, the lead frame 4 may be deformed. When the lead frame 4 is deformed, when the semiconductor element 1 and the inner leads 3 are sealed with a resin in the next step, they are not set at a normal position, and problems such as warpage of the package and exposure of the gold wire 10 occur.

【００１０】現状の作業では、ヒータコマ６に付着した
メッキ金属Ｍを定期的に手作業で除去しているが、この
除去作業を行うには生産ラインを停止しなければならな
いので、生産効率が低下するという問題がある。In the current operation, the plating metal M adhering to the heater top 6 is periodically removed manually, but the production line must be stopped in order to perform this removal operation. There is a problem of doing.

【００１１】本発明が解決すべき課題は、半導体装置の
ワイヤボンディング作業において、ヒータコマにメッキ
金属が付着するのを抑制してワイヤボンディング作業の
精度向上をはかることにある。An object of the present invention is to improve the accuracy of the wire bonding operation by suppressing the adhesion of the plating metal to the heater piece in the wire bonding operation of the semiconductor device.

【００１２】[0012]

【課題を解決するための手段】本発明は、半導体装置の
製造工程におけるワイヤボンディング作業に使用するヒ
ータコマであって、少なくともダイパッドとインナーリ
ードとを支持する部分をダイヤモンドまたは立方晶窒化
硼素を含有する焼結材料で構成したことを特徴とする。
また、前記部分を前記焼結材料で構成するのに代えて、
前記部分にダイヤモンド薄膜またはダイヤモンド状炭素
薄膜を形成してもよい。SUMMARY OF THE INVENTION The present invention relates to a heater top used for a wire bonding operation in a process of manufacturing a semiconductor device, wherein at least a portion supporting a die pad and an inner lead contains diamond or cubic boron nitride. It is characterized by comprising a sintered material.
Also, instead of configuring the portion with the sintered material,
A diamond thin film or a diamond-like carbon thin film may be formed on the portion.

【００１３】前述したように、ヒータコマにメッキ金属
が付着すると種々の弊害が生じるので、従来のように付
着したメッキ金属を定期的に除去するだけでは問題の解
決にはならない。本発明においては、メッキ金属がヒー
タコマに付着しにくいように、ヒータコマの構成部材の
材質を改良したものである。As described above, various problems occur when the plating metal adheres to the heater piece. Therefore, the problem cannot be solved only by periodically removing the plating metal adhered as in the related art. In the present invention, the material of the constituent members of the heater top is improved so that the plated metal does not easily adhere to the heater top.

【００１４】従来のヒータコマは鉄系材料や超硬合金な
どで構成されている。これら従来のヒータコマはＰｂ−
Ｓｎ、Ａｇなどのメッキ金属との濡れ性が良く、メッキ
金属が付着しやすい。これに対し本発明においては、少
なくともダイパッドとインナーリードとを支持する部分
をメッキ金属との濡れ性が極めて低いダイヤモンドまた
は立方晶窒化硼素を含有する焼結材料で構成するか、あ
るいは同部分にメッキ金属との濡れ性が極めて低いダイ
ヤモンド薄膜またはダイヤモンド状炭素薄膜を形成する
ことにより、メッキ金属を付着しにくくしたものであ
る。また、ダイヤモンドや立方晶窒化硼素を含有する焼
結材料や、ダイヤモンド薄膜、ダイヤモンド状炭素薄膜
は、鉄系材料や超硬合金に比べてメッキ金属との摩擦係
数が小さく、ダイパッドやインナーリードがヒータコマ
上で振動した際に発生する摩擦が小さいので、メッキ金
属が付着しにくい。これにより、半導体素子やインナー
リードの位置ずれや変形が抑制され、ワイヤボンディン
グ精度が向上する。また、付着したメッキ金属の除去作
業の間隔が長くなるので、生産ラインの停止回数が減少
して生産効率が向上する。A conventional heater piece is made of an iron-based material or a cemented carbide. These conventional heater pieces are Pb-
It has good wettability with plating metals such as Sn and Ag, and the plating metal easily adheres. On the other hand, in the present invention, at least the portion supporting the die pad and the inner lead is made of a sintered material containing diamond or cubic boron nitride having extremely low wettability with the plating metal, or is plated on the same portion. By forming a diamond thin film or a diamond-like carbon thin film having extremely low wettability with a metal, the plating metal is hardly adhered. Sintered materials containing diamond or cubic boron nitride, diamond thin films, and diamond-like carbon thin films have a lower coefficient of friction with plated metals than iron-based materials and cemented carbides. Since the friction generated when vibrating above is small, the plating metal does not easily adhere. This suppresses displacement and deformation of the semiconductor element and the inner lead, and improves wire bonding accuracy. In addition, since the interval between the operations of removing the adhered plating metal becomes longer, the number of stoppages of the production line is reduced, and the production efficiency is improved.

【００１５】一般的にダイヤモンドあるいは立方晶窒化
硼素を含有する焼結材料は、ダイヤモンド粒あるいは立
方晶窒化硼素粒と結合材とで構成される。結合材として
は、Ｃｏ、Ｆｅ、Ｃｕ、Ｚｎ、Ｓｎなどの金属とその合
金、超硬合金、セラミックス、サーメットなどが用いら
れる。これらの結合材のうち超硬合金、セラミックス、
サーメットはメッキ金属との濡れ性が比較的低いので、
メッキ金属の付着を防止するための焼結材料の結合材と
しては超硬合金、セラミックス、サーメットを用いるの
が望ましい。Generally, a sintered material containing diamond or cubic boron nitride is composed of diamond grains or cubic boron nitride grains and a binder. As the binder, metals such as Co, Fe, Cu, Zn, and Sn and alloys thereof, cemented carbides, ceramics, cermets, and the like are used. Of these binders, cemented carbides, ceramics,
Cermet has relatively low wettability with plated metal,
It is desirable to use a cemented carbide, ceramics, or cermet as a binder for the sintered material for preventing the adhesion of the plating metal.

【００１６】ここで、前記焼結材料中のダイヤモンドま
たは立方晶窒化硼素の含有量は４０〜９５体積％とする
のが望ましい。ダイヤモンドまたは立方晶窒化硼素の含
有量が４０体積％未満であると、メッキ金属との濡れ性
が充分に低くならず、メッキ金属の付着防止効果が不十
分となり、９５体積％より多くなると、焼結性が極端に
低下して製造が困難となり製造コストが増大し、またメ
ッキ金属付着防止効果も飽和するので、上記範囲が望ま
しい。Here, the content of diamond or cubic boron nitride in the sintered material is desirably 40 to 95% by volume. If the content of diamond or cubic boron nitride is less than 40% by volume, the wettability with the plating metal will not be sufficiently reduced, and the effect of preventing the adhesion of the plating metal will be insufficient. The above range is desirable because the bondability is extremely reduced, the production becomes difficult and the production cost increases, and the effect of preventing plating metal adhesion also saturates.

【００１７】さらに、前記の焼結材料で構成された部分
または薄膜が形成された部分の面粗度をＲａ０．１０μ
ｍ以下とするのが望ましい。面粗度がＲａ０．１０μｍ
より大きくなると、表面の凹凸によりダイパッドやイン
ナーリードのメッキが削り取られやすくなるため、メッ
キ金属の付着量が増大する。また、付着したメッキ金属
が微小な窪みに入り込み、除去することが困難となる。Further, the surface roughness of the portion composed of the above-mentioned sintered material or the portion where the thin film is formed is Ra 0.10 μm.
m or less. Surface roughness Ra 0.10 μm
If the size is larger, the plating on the die pad or the inner lead is more likely to be scraped off due to the unevenness of the surface, so that the amount of the deposited metal increases. In addition, the adhered plating metal enters the minute dents, making it difficult to remove.

【００１８】[0018]

【発明の実施の形態】図１は本発明の第１の実施形態に
おけるヒータコマの要部を示す斜視図であり、ヒータコ
マ６のダイパッド支持部分をダイヤモンド焼結体６１ａ
で形成し、インナーリード支持部分をダイヤモンド焼結
体６１ｂで形成したものである。図７で説明したメッキ
金属Ｍが付着しやすいダイパッド支持部分Ａおよびイン
ナーリード支持部分Ｂをダイヤモンド焼結体６１ａおよ
び６１ｂで形成することにより、この部分へのメッキ金
属の付着を抑制することができる。FIG. 1 is a perspective view showing a main part of a heater piece according to a first embodiment of the present invention, in which a die pad supporting portion of a heater piece 6 is a diamond sintered body 61a.
And the inner lead supporting portion is formed of a diamond sintered body 61b. By forming the die pad support portion A and the inner lead support portion B to which the plating metal M is easily attached as described in FIG. 7 with the diamond sintered bodies 61a and 61b, the attachment of the plating metal to these portions can be suppressed. .

【００１９】図２は本発明の第２の実施形態におけるヒ
ータコマの要部を示す斜視図であり、ヒータコマ６の上
面の全面にわたり厚さ３０μｍのダイヤモンド状炭素薄
膜６２を形成したものである。ダイヤモンド状炭素薄膜
６２の形成によってもメッキ金属の付着を抑制すること
ができる。薄膜形成は焼結体の埋め込みの場合に比べ
て、ヒータコマ６の形状に影響されないため、形状が複
雑なヒータコマでも比較的容易に製造できるという利点
がある。FIG. 2 is a perspective view showing a main part of a heater piece according to a second embodiment of the present invention, in which a diamond-like carbon thin film 62 having a thickness of 30 μm is formed over the entire upper surface of the heater piece 6. The formation of the diamond-like carbon thin film 62 can also suppress the adhesion of the plating metal. Since the thin film formation is not affected by the shape of the heater top 6 as compared with the case where the sintered body is embedded, there is an advantage that a heater top having a complicated shape can be manufactured relatively easily.

【００２０】〔試験例〕表１に示す発明品１〜６のヒー
タコマ、比較品１，２のヒータコマおよび従来品１，２
のヒータコマを作成し、ワイヤボンディング作業を行っ
た。発明品１〜３はヒータコマのダイパッド支持部分と
インナーリード支持部分をダイヤモンド焼結体で形成し
たもので、ダイヤモンド粒と結合材の比率および面粗さ
を変えている。発明品４はヒータコマのダイパッド支持
部分とインナーリード支持部分を立方晶窒化硼素（ＣＢ
Ｎ）焼結体で形成したものである。発明品５はヒータコ
マの上面の全面にダイヤモンド状炭素薄膜を形成し、発
明品６はヒータコマの上面の全面に合成ダイヤモンド薄
膜を形成したものである。比較品はヒータコマのダイパ
ッド支持部分とインナーリード支持部分をダイヤモンド
焼結体で形成したものであるが、ダイヤモンド粒と結合
材の比率が本発明の範囲から外れているものである。[Test Examples] Heater pieces of Invention products 1 to 6 shown in Table 1, heater pieces of Comparative products 1 and 2, and conventional products 1 and 2
And a wire bonding operation was performed. Inventive products 1 to 3 have a die pad supporting portion and an inner lead supporting portion of a heater piece formed of a diamond sintered body, and have different ratios of diamond grains and binder and surface roughness. Inventive product 4 uses a cubic boron nitride (CB) for the die pad supporting portion and the inner lead supporting portion of the heater top.
N) It was formed of a sintered body. The invention product 5 has a diamond-like carbon thin film formed on the entire upper surface of the heater top, and the invention product 6 has a synthetic diamond thin film formed on the entire upper surface of the heater top. The comparative product has a die pad supporting portion and an inner lead supporting portion of a heater piece formed of a sintered diamond, but the ratio of the diamond grains to the binder is out of the range of the present invention.

【００２１】[0021]

【表１】 [Table 1]

【００２２】発明品１〜４では従来品１，２の３０〜７
０倍、発明品５，６でも従来品の１６〜２０倍の寿命が
得られた。とくに発明品３では、面粗さを小さくしたこ
とにより、メッキ金属の付着防止効果が向上し、最高の
寿命を示した。発明品５，６は薄膜が磨耗して寿命とな
るまでメッキ金属の付着防止効果が持続した。比較品は
焼結体中のダイヤモンド含有率が少ないため充分なメッ
キ金属付着防止効果が得られなかった。Inventive products 1 to 4 are 30 to 7 of conventional products 1 and 2.
The life of 0 times and the inventions 5 and 6 were 16 to 20 times longer than those of the conventional products. In particular, in Invention product 3, the effect of preventing the adhesion of the plated metal was improved by reducing the surface roughness, and the life was the longest. Inventive products 5 and 6 maintained the effect of preventing the adhesion of the plated metal until the life of the thin film was worn. The comparative product did not have a sufficient plating metal adhesion preventing effect because the content of diamond in the sintered body was small.

【００２３】[0023]

【発明の効果】少なくともダイパッドとインナーリード
とを支持する部分をダイヤモンドまたは立方晶窒化硼素
を含有する焼結材料で構成するか、または、前記部分に
ダイヤモンド薄膜またはダイヤモンド状炭素薄膜を形成
することにより、メッキ金属との濡れ性が低くなってメ
ッキ金属が付着しにくくなり、半導体素子やインナーリ
ードの位置ずれや変形が抑制され、ワイヤボンディング
精度が向上する。また、付着したメッキ金属の除去作業
の間隔が長くなるので生産ラインの停止回数が減少して
生産効率が向上する。According to the present invention, at least a portion supporting the die pad and the inner lead is made of a sintered material containing diamond or cubic boron nitride, or a diamond thin film or a diamond-like carbon thin film is formed on the portion. In addition, the wettability with the plating metal is reduced, so that the plating metal does not easily adhere, the displacement and deformation of the semiconductor element and the inner lead are suppressed, and the wire bonding accuracy is improved. In addition, since the interval of the work of removing the adhered plating metal becomes longer, the number of stoppages of the production line is reduced, and the production efficiency is improved.

【図面の簡単な説明】[Brief description of the drawings]

【図１】 本発明の第１の実施形態におけるヒータコマ
の要部を示す斜視図である。FIG. 1 is a perspective view showing a main part of a heater piece according to a first embodiment of the present invention.

【図２】 本発明の第２の実施形態におけるヒータコマ
の要部を示す斜視図である。FIG. 2 is a perspective view illustrating a main part of a heater piece according to a second embodiment of the present invention.

【図３】 ダイパッド上の半導体素子とリードフレーム
を示す図である。FIG. 3 is a diagram showing a semiconductor element and a lead frame on a die pad.

【図４】 リードフレームを加熱するヒータを示す図で
ある。FIG. 4 is a diagram showing a heater for heating a lead frame.

【図５】 ワイヤボンディング作業の手順を示す図であ
る。FIG. 5 is a diagram showing a procedure of a wire bonding operation.

【図６】 ワイヤボンディング装置の要部を示す図であ
る。FIG. 6 is a diagram illustrating a main part of a wire bonding apparatus.

【図７】 ヒータコマへのメッキ金属の付着状態を示す
図でる。FIG. 7 is a diagram showing a state of adhesion of a plating metal to a heater piece.

【符号の説明】[Explanation of symbols]

１ 半導体素子 ２ 電極 ３ インナーリード ４ リードフレーム ５ ダイパッド ６ ヒータコマ ７ ヒータブロック ８ 抵抗加熱素子 ９ ボンディングツール １０ 金線 １１ 電気トーチ １２ 金球 １３ クランプ ６１ａ，６１ｂ ダイヤモンド焼結体 ６２ ダイヤモンド状炭素薄膜 Ａ ダイパッド支持部分 Ｂ インナーリード支持部分 Ｍ メッキ金属 DESCRIPTION OF SYMBOLS 1 Semiconductor element 2 Electrode 3 Inner lead 4 Lead frame 5 Die pad 6 Heater piece 7 Heater block 8 Resistance heating element 9 Bonding tool 10 Gold wire 11 Electric torch 12 Gold ball 13 Clamp 61a, 61b Diamond sintered body 62 Diamond-like carbon thin film A Die pad Supporting part B Inner lead supporting part M Plated metal

フロントページの続き (72)発明者 宮崎 賢一郎 福岡県浮羽郡田主丸町大字竹野210番地 ノリタケダイヤ株式会社内 Ｆターム(参考） 5F044 AA01 BB25 GG01 Continuation of the front page (72) Inventor Kenichiro Miyazaki 210 Takeno, Oji, Tanushimaru-cho, Ukiha-gun, Fukuoka Prefecture Noritake Diamond Co., Ltd. F-term (reference) 5F044 AA01 BB25 GG01

Claims (3)

【特許請求の範囲】[Claims] 【請求項１】 半導体装置の製造工程におけるにワイヤ
ボンディング作業に使用するヒータコマであって、少な
くともダイパッドとインナーリードとを支持する部分を
ダイヤモンドまたは立方晶窒化硼素を含有する焼結材料
で構成したワイヤボンディング用ヒータコマ。1. A heater piece used for a wire bonding operation in a manufacturing process of a semiconductor device, wherein at least a portion supporting a die pad and an inner lead is made of a sintered material containing diamond or cubic boron nitride. Heater top for bonding. 【請求項２】 前記焼結材料中のダイヤモンドまたは立
方晶窒化硼素の含有量が４０〜９５体積％である請求項
１記載のワイヤボンディング用ヒータコマ。2. The heater piece for wire bonding according to claim 1, wherein the content of diamond or cubic boron nitride in the sintered material is 40 to 95% by volume. 【請求項３】 半導体装置の製造工程におけるにワイヤ
ボンディング作業に使用するヒータコマであって、少な
くともダイパッドとインナーリードとを支持する部分に
ダイヤモンド薄膜またはダイヤモンド状炭素薄膜を形成
したワイヤボンディング用ヒータコマ。3. A heater piece for use in a wire bonding operation in a process of manufacturing a semiconductor device, wherein a diamond thin film or a diamond-like carbon thin film is formed on at least a portion supporting a die pad and an inner lead.
JP2001037398A 2001-02-14 2001-02-14 Heater dowel for wire bonding Pending JP2002246408A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001037398A JP2002246408A (en) 2001-02-14 2001-02-14 Heater dowel for wire bonding

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001037398A JP2002246408A (en) 2001-02-14 2001-02-14 Heater dowel for wire bonding

Publications (1)

Publication Number Publication Date
JP2002246408A true JP2002246408A (en) 2002-08-30

Family

ID=18900535

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001037398A Pending JP2002246408A (en) 2001-02-14 2001-02-14 Heater dowel for wire bonding

Country Status (1)

Country Link
JP (1) JP2002246408A (en)

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