JP2002231783A - Semiconductor manufacturing apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor manufacturing apparatus capable of restricting star-up of particle dust at the time of gas introduction into a load- lock chamber and at the time of evacuation. SOLUTION: A load-lock chamber 1 is provided with a gas introduction port 2 at the center of an upper surface 1a. The gas introduction port 2 is connected to a normal purge line 5 and a slow purge line 6 via a purge line 3 and a switch valve 4 having a pressure regulating function. Further, an exhaust port 7 is provided at four corners of a bottom surface 1b. Exhaust ports 7a, 7b, 7c, 7d provided at respective corners are disposed at outward positions of a semiconductor substrate 11 so as not to overlap the semiconductor substrate 11. Each of the exhaust ports 7a, 7b, 7c, 7d is connected to exhaust lines 8a, 8b, 8c, 8d, to be connected to an evacuating line 10 via an exhaust regulation valve 9 having the pressure regulation function.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor manufacturing apparatus capable of suppressing winding of particles in a load lock chamber and preventing particles from adhering to the surface of a semiconductor substrate.

[0002]

2. Description of the Related Art Conventionally, in a semiconductor manufacturing apparatus having a vacuum processing chamber, for example, an ion implantation apparatus, an etching apparatus, an ashing apparatus, etc., when the vacuum processing chamber is directly returned to the atmospheric pressure, the vacuum processing chamber is again brought into a predetermined state. It takes time to set the degree of vacuum. For this reason, a preliminary vacuum chamber, a so-called load lock chamber, is provided adjacent to the vacuum processing chamber, and in many cases, only this load lock chamber is configured to return to the atmospheric pressure. For example, a semiconductor substrate is carried into and out of a vacuum processing chamber.

Hereinafter, an example of a load lock chamber of a conventional semiconductor manufacturing apparatus will be described with reference to the drawings.

FIG. 5 is a sectional view of a load lock chamber of a conventional semiconductor manufacturing apparatus. In FIG. 5, the load lock chamber 51 is provided with a gas introduction port 52 and an exhaust port 53 on a side surface. A switching valve 54 is provided at the gas inlet 52.
The normal purging line 55 and the slow purging line 56 are connected to each other through a port, and the evacuation port 53 is connected to an evacuation line 57 connected to a vacuum evacuation pump (not shown).

The operation of loading and unloading the semiconductor substrate 58 into and from the load lock chamber 51 of the semiconductor manufacturing apparatus configured as described above will be described.

First, an operation of loading the semiconductor substrate 58 into the load lock chamber 51 will be described.

First, the load lock chamber 51 has a low pressure (vacuum).
When a gas such as nitrogen gas or air is introduced into the load lock chamber 51 from the gas inlet 52 using the slow purge line 56, the indoor pressure becomes tens of thousands P
When it becomes a, the switching valve 54 switches to the normal purge line 55 to introduce a large amount of gas, and when the room pressure becomes higher than the atmospheric pressure, the introduction of the gas is stopped.

Next, a loading port (not shown) provided in the load lock chamber 51 is opened, and after the semiconductor substrate 58 is loaded into the load lock chamber 51, the loading port is closed. Thereafter, using the exhaust line 57 connected to the vacuum exhaust pump,
The air remaining in the room is exhausted from the exhaust port 53, and vacuum exhaust is performed until the indoor pressure reaches a predetermined indoor pressure.

Next, the semiconductor substrate 58 is carried from the load lock chamber 51 to an adjacent vacuum processing chamber (not shown), and processes such as ion implantation, etching, and ashing are performed in the vacuum processing chamber.

Next, the operation of unloading the semiconductor substrate 58 from the load lock chamber 51 will be described.

First, a semiconductor substrate 58 processed in a vacuum processing chamber (not shown) is transferred from the vacuum processing chamber to the load lock chamber 51.
Take out inside.

Next, after a gas is introduced into the low pressure (vacuum) load lock chamber 51 through the gas inlet 52 using the slow purge line 56, the indoor pressure is reduced to several tens of thousands Pa.
Then, the switching valve 54 switches to the normal purge line 55 to introduce a large amount of gas, and stops the introduction of gas when the room pressure becomes higher than the atmospheric pressure.

Next, a carry-out port (not shown) provided in the load lock chamber 51 is opened, and the semiconductor substrate 58 is carried out from the load lock chamber 51.

[0014]

However, in the conventional semiconductor manufacturing apparatus described above, when gas is introduced from the gas inlet 52 provided on the side surface of the load lock chamber 51, the introduced gas becomes turbulent. Easy, load lock chamber 51
There is a problem that particles existing inside the semiconductor substrate and particles adhering to the back surface of the semiconductor substrate 58 are wound up, and the particles adhere to the surface of the semiconductor substrate 58.

When the residual gas (air) in the room is exhausted from the exhaust port 53 provided on the side surface of the load lock chamber 51, the exhausted gas tends to become turbulent, and There is a problem that particles existing on the semiconductor substrate 58 and particles adhering to the back surface of the semiconductor substrate 58 are wound up, and the particles adhere to the surface of the semiconductor substrate 58.

As described above, the rolled-up particles adhere to the surface of the semiconductor substrate 58 again,
There is a problem that the yield of manufactured semiconductor devices is reduced.

It is an object of the present invention to provide a semiconductor manufacturing apparatus capable of suppressing winding of particles by laminating an air flow at the time of introducing a gas into a load lock chamber and at the time of evacuation.

[0018]

According to the present invention, there is provided a semiconductor manufacturing apparatus having a load lock chamber, wherein the load lock chamber has a gas inlet provided on an upper surface and a plurality of gas inlets provided on a lower surface. An exhaust port is provided, and the plurality of exhaust ports are arranged at positions outside the load so as not to overlap with the load carried into the load lock chamber.

With this configuration, it is possible to suppress the particles from being wound up due to the gas introduced from the gas introduction port wrapping around to the back side.

In the above-described semiconductor manufacturing apparatus, at least four exhaust ports are provided at each corner of the bottom surface as the plurality of exhaust ports. With this configuration, stagnation of airflow and turbulence of the airflow in the corner portion can be eliminated, and winding of particles adhering to the load lock chamber can be suppressed.

In the above-mentioned semiconductor manufacturing apparatus, the gas inlet is provided at the center of the upper surface of the load lock chamber.
Alternatively, the gas inlet comprises a filter chamber having a gas laminarization filter provided on the upper surface of the load lock chamber.
Alternatively, the same number of gas inlets as the plurality of exhaust ports are provided, and provided on the upper surface of the load lock chamber so as to face the plurality of exhaust ports, respectively. In any of these configurations, the flow of the gas introduced from the gas introduction port can be made laminar to the plurality of exhaust ports, and the curling of particles can be suppressed.

In the above-described semiconductor manufacturing apparatus, a roll-up preventing plate is provided on a side surface of the load lock chamber. The curling-up prevention plate suppresses curling of particles.

[0023]

DESCRIPTION OF THE PREFERRED EMBODIMENTS (First Embodiment) FIG. 1 shows an example of a semiconductor manufacturing apparatus according to a first embodiment of the present invention, and FIG. FIG. 1 (b)
FIG. 2 is a sectional configuration view taken along a line AA in FIG.

The load lock chamber 1 of the semiconductor manufacturing apparatus shown in FIG. 1 is provided with a gas inlet 2 at the center of the upper surface 1a, and the gas inlet 2 is connected to a purge line 3. It is connected to a normal purge line 5 and a slow purge line 6 via a switching valve 4 having a pressure adjusting function. Exhaust ports 7 are provided at four corners of the bottom surface 1b, and the exhaust ports 7a, 7b, 7c, and 7d provided at the corners do not overlap with the semiconductor substrate 11 that is a load. Is arranged at a position outside the semiconductor substrate 11 as described above. And each exhaust port 7
a, 7b, 7c, 7d have exhaust lines 8a, 8b,
8c and 8d are connected to each other, and a vacuum exhaust line 10 is connected through an exhaust adjusting valve 9 having a pressure adjusting function.
It is connected to the. The evacuation line 10 is connected to an evacuation pump (not shown).

The operation of loading and unloading the semiconductor substrate into and from the load lock chamber of the semiconductor manufacturing apparatus configured as described above will be described.

First, the operation of loading the semiconductor substrate 11 into the load lock chamber 1 will be described.

First, when the load lock chamber 1 is at a low pressure (vacuum), a gas such as nitrogen gas is introduced into the load lock chamber 1 from the gas inlet 2 using the slow purge line 6. When the indoor pressure reaches tens of thousands Pa, the switching valve 4 switches to the normal purge line 5 to introduce a large amount of nitrogen gas, and when the indoor pressure becomes higher than the atmospheric pressure, the introduction of the nitrogen gas is stopped. At this time, when nitrogen gas is introduced using the slow purge line 6 and the normal purge line 5, the amount of exhaust gas is smaller than the amount of nitrogen gas introduced until a predetermined indoor pressure, for example, atmospheric pressure is introduced. The nitrogen gas (gas) is exhausted from the evacuation line 10 while adjusting with the exhaust adjustment valve 9 as described above.

Next, a loading port (not shown) provided in the load lock chamber 1 is opened, and after the semiconductor substrate 11 is loaded into the load lock chamber 1, the loading port is closed. Then, using the evacuation line 10 connected to the evacuation pump,
The gas (air) remaining in the room is discharged to the exhaust ports 7a, 7b, 7
Evacuation is performed evenly from c and 7d, and evacuation is performed until the indoor pressure reaches a predetermined indoor pressure. At this time, the indoor pressure is tens of thousands of P
The exhaust gas is adjusted by the exhaust adjusting valve 9 until the value of “a” is reached, and the slow exhaust is performed. At the time of slow exhaust, exhaust may be performed while introducing a smaller amount of nitrogen gas from the slow purge line 6 until a predetermined indoor pressure is reached.

Next, the semiconductor substrate 11 is carried from the load lock chamber 1 to an adjacent vacuum processing chamber (not shown), and processes such as ion implantation, etching, and ashing are performed in the vacuum processing chamber.

Next, the operation of unloading the semiconductor substrate from the load lock chamber will be described.

First, the semiconductor substrate 11 processed in a vacuum processing chamber (not shown) is carried out from the vacuum processing chamber into the load lock chamber 1.

Next, after nitrogen gas is introduced into the low pressure (vacuum) load lock chamber 1 through the gas inlet 2 using the slow purge line 6, if the indoor pressure becomes tens of thousands Pa, Normal purge line 5 by switching valve 4
And a large amount of nitrogen gas is introduced. When the indoor pressure becomes equal to or higher than the atmospheric pressure, the introduction of the nitrogen gas is stopped. At this time,
When the nitrogen gas is introduced using the slow purge line 6 and the normal purge line 5, the exhaust gas is exhausted so as to have a smaller exhaust amount than the introduced amount of the nitrogen gas introduced up to a predetermined room pressure, for example, atmospheric pressure. The nitrogen gas is exhausted from the evacuation line 10 while adjusting with the adjusting valve 9.

Next, a carry-out port (not shown) provided in the load lock chamber 1 is opened, and the semiconductor substrate 11 is carried out from the load lock chamber 1.

According to the configuration of the first embodiment, the exhaust ports 7 are provided at the corners of the bottom surface 1b of the load lock chamber 1, and the exhaust ports 7a, 7 provided at each corner are provided.
b, 7c, and 7d are arranged at positions outside the semiconductor substrate 11 so as not to overlap with the semiconductor substrate 11 that is carried in. Exhaust port 7 provided at this corner
By a, 7b, 7c, and 7d, stagnation of airflow and turbulence of airflow at corners can be eliminated and nitrogen gas introduced from the gas inlet 2 can be prevented from flowing to the back surface side of the semiconductor substrate 11. . Therefore, it is possible to prevent the particles attached to the back surface of the semiconductor substrate 11 and the particles attached to the bottom surface of the load lock chamber located below the back surface of the semiconductor substrate 11 from being wound up. When returning the inside of the load lock chamber 1 to the atmospheric pressure, the upper surface 1a
At the same time, nitrogen gas is introduced from the gas introduction port 2 provided at the center of the nozzle, and the pressure is gradually reduced while exhausting with a smaller exhaust gas amount than the introduction amount of the nitrogen gas introduced from the exhaust ports 7a, 7b, 7c, 7d. By increasing the height, the winding of the particles is suppressed, and the wound particles can be immediately discharged from the exhaust ports 7a, 7b, 7c, and 7d. Similarly, when the interior of the load lock chamber 1 is evacuated to a predetermined indoor pressure, gas is exhausted from the exhaust ports 7a, 7b, 7c, 7d provided at the corners of the bottom surface 1b, and at the same time, the center of the upper surface 1a is exhausted. By gradually lowering the pressure while introducing a smaller amount of nitrogen gas than the amount of exhaust gas from the gas inlet port 2 provided in the section, the winding of the particles is suppressed and the swirled particles are immediately exhausted from each part. It can be discharged from the mouths 7a, 7b, 7c, 7d.

(Second Embodiment) FIG. 2 shows a second embodiment of the present invention.
FIG. 2 is an example of a semiconductor manufacturing apparatus according to the embodiment, and FIG.
FIG. 2A is a plan view of the structure viewed from above, and FIG.
It is a sectional lineblock diagram of the BB line part of (a).

The load lock chamber 1 of the semiconductor manufacturing apparatus shown in FIG. 2 is provided with a filter chamber 12 having a gas laminarization filter 12a on an upper surface 1a, and a purge line 3 is connected to the filter chamber 12. It is connected to a normal purge line 5 and a slow purge line 6 via a switching valve 4 having a pressure adjusting function. It is desirable that the gas laminarization filter 12a has a larger area than the semiconductor substrate 11 and is arranged so that the semiconductor substrates 11 all overlap.

Exhaust ports 7 are provided at the corners of the bottom surface 1b, and the exhaust ports 7a, 7b, 7c, 7d provided at the respective corners are connected to the semiconductor substrate 1 to be carried in.
1 are arranged at positions outside the semiconductor substrate 11 so as not to overlap. And each exhaust port 7a, 7b,
7c and 7d have exhaust lines 8a, 8b, 8c and 8d
Are connected to a vacuum exhaust line 10 via an exhaust adjusting valve 9 having a pressure adjusting function. The evacuation line 10 is connected to an evacuation pump (not shown).

The operation of loading and unloading the semiconductor substrate 11 into and from the load lock chamber 1 of the semiconductor manufacturing apparatus configured as described above can be performed in the same manner as in the first embodiment. However, gas such as nitrogen gas is introduced through the filter chamber 12 having the gas laminarization filter 12a.

According to the configuration of the second embodiment, the exhaust ports 7 are provided at the corners of the bottom surface 1b of the load lock chamber 1, and the exhaust ports 7a, 7 provided at each corner are provided.
b, 7c, and 7d are arranged at positions outside the semiconductor substrate 11 so as not to overlap with the semiconductor substrate 11 that is a load. Thereby, the same effect as in the first embodiment can be obtained. Further, the upper surface 1a of the load lock chamber 1
Has a filter chamber 1 having a gas laminarization filter 12a into which a gas such as nitrogen gas can be introduced in a laminar flow.
2 are provided. Thus, the load lock chamber 1
Since the flow of the gas introduced into the inside can be further made laminar, the winding of particles can be further suppressed.

(Third Embodiment) FIG. 3 shows a third embodiment of the present invention.
FIG. 3 is an example of a semiconductor manufacturing apparatus according to the embodiment, and FIG.
FIG. 3A is a plan view showing the structure when viewed from above, and FIG.
It is a sectional lineblock diagram of a CC line part of (a).

The load lock chamber 1 of the semiconductor manufacturing apparatus shown in FIG. 3 is provided with gas inlets 2 at corners of the upper surface 1a, and gas inlets 2a provided at each corner.
2b, 2c and 2d are arranged at positions outside the semiconductor substrate 11 so as not to overlap with the semiconductor substrate 11 to be carried. Then, each gas inlet 2a, 2b, 2
A purge line 3 is connected to each of c and 2d, and is connected to a normal purge line 5 and a slow purge line 6 via a switching valve 4 having a pressure adjusting function.

Exhaust ports 7 are provided at the corners of the bottom surface 1b, and the exhaust ports 7a, 7b, 7c, 7d provided at each corner are provided with the semiconductor substrate 1 which is a carry-in object.
1 are arranged at positions outside the semiconductor substrate 11 so as not to overlap. And each exhaust port 7a, 7b,
7c and 7d have exhaust lines 8a, 8b, 8c and 8d
(8c and 8d are not shown) are connected to the vacuum exhaust line 10 via an exhaust adjusting valve 9 having a pressure adjusting function. The evacuation line 10 is connected to an evacuation pump (not shown).

In the third embodiment, the exhaust ports 7a, 7
It is desirable that the gas inlets 2a, 2b, 2c, and 2d face the gas inlets b, 7c, and 7d, respectively.

The operation of loading and unloading the semiconductor substrate 11 into and from the load lock chamber 1 of the semiconductor manufacturing apparatus configured as described above can be performed in the same manner as in the first embodiment. However, nitrogen gas is introduced uniformly from the gas inlets 2a, 2b, 2c, 2d provided at each corner of the upper surface 1a.

According to the configuration of the third embodiment, the exhaust ports 7 are provided at the corners of the bottom surface 1b of the load lock chamber 1, and the exhaust ports 7a, 7 provided at each corner are provided.
b, 7c, and 7d are arranged at positions outside the semiconductor substrate 11 so as not to overlap with the semiconductor substrate 11 that is carried in. Thereby, the same effect as in the first embodiment can be obtained. Further, gas inlets 2 are provided at the corners of the upper surface 1a, and the gas inlets 2a, 2b, 2c, 2d provided at the respective corners do not overlap with the semiconductor substrate 11, which is a load. It is arranged at a position outside the semiconductor substrate 11. Moreover, the exhaust port 7
a, 7b, 7c, 7d and gas inlets 2a, 2b, 2c,
2d are provided to face each other. Thereby, the flow of the gas introduced into the load lock chamber 1 can be further laminarized, so that the winding of the particles can be suppressed. In addition, gas inlets 2a, 2b, 2
If the diameters of the exhaust ports 7a, 7b, 7c, 7d are made larger than those of c, 2d, it is possible to further suppress the winding of particles.

(Fourth Embodiment) FIG. 4 shows a fourth embodiment of the present invention.
FIG. 4 is an example of a semiconductor manufacturing apparatus according to the embodiment, and FIG.
4A is a plan view showing the structure viewed from above, and FIG.
It is sectional drawing of the DD line | wire part of (a).

The load lock chamber 1 of the semiconductor manufacturing apparatus shown in FIG. 4 is provided with a gas inlet 2 at the center of the upper surface 1a, and the gas inlet 2 is connected to a purge line 3. It is connected to a normal purge line 5 and a slow purge line 6 via a switching valve 4 having a pressure adjusting function.

Exhaust ports 7 are provided at the corners of the bottom surface 1b, and the exhaust ports 7a, 7b, 7c, 7d provided at each corner are provided with the semiconductor substrate 1 which is a carry-in object.
1 are arranged at positions outside the semiconductor substrate 11 so as not to overlap. And each exhaust port 7a, 7b,
7c and 7d have exhaust lines 8a, 8b, 8c and 8d
Are connected to a vacuum exhaust line 10 via an exhaust adjusting valve 9 having a pressure adjusting function. The evacuation line 10 is connected to an evacuation pump (not shown).

The side surfaces 1c and 1d are provided with a plurality of anti-winding plates 13a, 13b and 13c, respectively. These anti-winding plates 13 are attached to the side surfaces 1c and 1d such that their tips face downward, and the angle 14 between the side surfaces 1c and 1d and each of the anti-winding plates 13 is an acute angle. Also, the side surfaces 1c and 1
a plurality of anti-winding plates 1 attached to the respective d
3, at least the lowermost anti-winding plate 13
It is desirable that a be provided such that the front end is at a position lower than the surface of the semiconductor substrate 11 (bottom side).

According to the configuration of the fourth embodiment, the exhaust ports 7 are provided at the corners of the bottom surface 1b of the load lock chamber 1, and the exhaust ports 7a, 7 provided at each corner are provided.
b, 7c, and 7d are arranged at positions outside the semiconductor substrate 11 so as not to overlap with the semiconductor substrate 11 that is carried in. Thereby, the same effect as in the first embodiment can be obtained. Further, the side surface 1c of the load lock chamber 1
And 1d are provided with a plurality of winding prevention plates 13, so that the winding of the particles can be further suppressed, and the re-adhesion of the particles to the surface of the semiconductor substrate 11 can be prevented.

Although the structure shown in the second and third embodiments is not provided with a curling prevention plate, the same effect can be obtained by applying the curling preventing plate as shown in the fourth embodiment. Obtainable.

In the first to fourth embodiments, the exhaust ports 7a, 7b, 7c and 7d are provided at each corner of the bottom surface 1b of the load lock chamber. An exhaust port may be provided evenly at the position.

In the first to fourth embodiments, a single semiconductor substrate is used as a load to be loaded into the load lock chamber. However, a wafer cassette in which a plurality of semiconductor substrates are set may be used. In this case, an exhaust port may be provided at a position outside the wafer cassette.

[0054]

According to the present invention, a gas inlet is provided on the upper surface of the load lock chamber, and the gas is exhausted from a plurality of exhaust ports provided on the bottom surface so as not to overlap the semiconductor substrate. Stagnation of air flow and turbulence of the air flow at the time of can be eliminated, and the gas introduced from the gas inlet can be prevented from sneaking into the back surface side of the semiconductor substrate. Accordingly, it is possible to suppress winding of particles adhering to the back surface of the semiconductor substrate and particles adhering to the bottom surface of the load lock chamber located below the back surface of the semiconductor substrate. Therefore, the redeposition of particles on the surface of the semiconductor substrate can be reduced,
The yield of the semiconductor device can be improved.

[Brief description of the drawings]

FIG. 1 is an example of a semiconductor manufacturing apparatus according to a first embodiment of the present invention, in which (a) is a plan view viewed from above, and (b) is a cross-sectional view taken along line AA of (a).

FIG. 2 is an example of a semiconductor manufacturing apparatus according to a second embodiment of the present invention, in which (a) is a plan view seen from above, and (b) is a cross-sectional view taken along the line BB in (a).

FIG. 3 is an example of a semiconductor manufacturing apparatus according to a third embodiment of the present invention, in which (a) is a plan view viewed from above, and (b) is a cross-sectional view taken along line CC of (a).

FIG. 4 is an example of a semiconductor manufacturing apparatus according to a fourth embodiment of the present invention, in which (a) is a plan view viewed from above, and (b) is a cross-sectional view taken along line DD in (a).

FIG. 5 is a cross-sectional configuration diagram of a conventional semiconductor manufacturing apparatus.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Load lock chamber 2 Gas inlet 3 Purge line 4 Switching valve 5 Normal purge line 6 Slow purge line 7a, 7b, 7c, 7d Exhaust port 8a, 8b, 8c, 8d Exhaust line 9 Exhaust adjusting valve 10 Vacuum Exhaust line 11 Semiconductor substrate 12 Filter chamber 12a Gas laminar flow filter 13 Roll-up prevention plate

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat ゛ (Reference) H01L 21/027 C23C 14/00 B 21/3065 H01L 21/30 572A // C23C 14/00 21/302 B F term (reference) 4K029 CA10 DA09 KA01 5F004 AA16 BB18 BC05 BD01 BD06 5F031 CA02 FA01 MA11 NA04 NA07 NA16 5F045 BB15 DP03 EB08 EB12 EB17 EF20 EN04 5F046 MA11

Claims (7)

[Claims] 1. A semiconductor manufacturing apparatus having a load lock chamber, wherein the load lock chamber includes a gas introduction port provided on an upper surface, and a plurality of exhaust ports provided on a bottom surface, wherein the plurality of exhaust ports are provided. A semiconductor manufacturing apparatus which is arranged at an outer position of the load so as not to overlap with the load carried into the load lock chamber. 2. The semiconductor manufacturing apparatus according to claim 1, wherein the plurality of exhaust ports include at least four exhaust ports provided at respective corners of the bottom surface. apparatus. 3. The semiconductor manufacturing apparatus according to claim 2, wherein the load is a semiconductor substrate. 4. The semiconductor manufacturing apparatus according to claim 1, wherein said gas inlet is provided at a central portion of an upper surface of said load lock chamber. manufacturing device. 5. The semiconductor manufacturing apparatus according to claim 1, wherein the gas inlet is from a filter chamber having a gas laminarization filter provided on an upper surface of the load lock chamber. A semiconductor manufacturing apparatus characterized in that: 6. The semiconductor manufacturing apparatus according to claim 1, wherein the gas introduction ports are provided in the same number as the plurality of exhaust ports, and are provided on an upper surface of the load lock chamber. And a plurality of exhaust ports, each of which is provided so as to face the plurality of exhaust ports. 7. The semiconductor manufacturing apparatus according to claim 4, wherein a roll-up prevention plate is provided on a side surface of the load lock chamber.