JP2002217394A - Solid-state imaging device and method for manufacturing it - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a solid-stage imaging device in which a quantity of light to a photoelectric element or a light intensity is enhanced, whose structure and manufacturing process are simplified, which can be made low-cost, which shortens the time required for its manufacture and which can enhance a throughput and a production yield. SOLUTION: The solid-state imaging device is provided with a semiconductor substrate 1 on which the photoelectric element 10 is formed in each imaging pixel, an electrode 2 which is formed on the surface of the semiconductor substrate 1 so as to be connected to the photoelectric element 10, an interlayer insulating film 3 formed so as to cover the semiconductor substrate 1 and the surface of the electrode 2, a light blocking film 4 formed by installing a prescribed opening on its surface, a protective film 5 formed so as to cover the surface of the film and the surface of the film 3 exposed from the opening in the film 4, and a color filter 71 formed on its surface so as to be bent along the irregularity of the protective film 5. A flattened film and an OVP film in conventional cases are omitted.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

[0001] 1. Field of the Invention [0002] The present invention relates to a solid-state imaging device having a color filter on a semiconductor substrate on which a photoelectric element is provided for each imaging pixel, and a method of manufacturing the same.

[0002]

2. Description of the Related Art A solid-state imaging device is a so-called CCD (Charge).
It is also widely used for various purposes such as video cameras, digital cameras, industrial cameras, and optical input devices. In particular, in recent years, color cells corresponding to three primary colors, such as R (red), G (green), and B (blue), are arranged and formed as an imaging device for capturing a color image of a moving image or a still image. 2. Description of the Related Art Solid-state imaging devices provided with color filters are widely used.

In a solid-state image pickup device capable of picking up such a color image, in the history of its development, first, a color filter in which color cells are arranged and formed on a transparent substrate such as a glass substrate is provided for each image pickup pixel. CCD with photoelectric elements arranged and formed
The structure was bonded to the chip. According to such a structure, since the color filter and the CCD chip are manufactured separately, even if a defect or the like occurs in one of them, only the one having the defect is wasted. Further, a color filter can be formed over a flat substrate surface. Therefore, at the time when the manufacturing technology of the CCD chip and the color filter was under development, the above-described structure and the manufacturing method thereof were highly practical.

However, as the structure and manufacturing technology of both the CCD chip and the color filter have been improved, and the density of image pickup pixels has been increased and the number of pixels has been increased, the color filter and the color filter have been developed.
Rather than the merit of manufacturing a CD chip separately,
The difficulty of aligning them with high precision has become greater. So, CCD
Instead of separately manufacturing a chip and a color filter as described above and then bonding the two together, a technique has been proposed in which a color filter is directly formed on a CCD chip formed on a semiconductor substrate. It has been put to practical use.

FIG. 6 is a cross-sectional view showing an example of a schematic configuration of a conventional solid-state imaging device in which such a color filter is formed directly on a semiconductor substrate.

[0006] On the semiconductor substrate 101, a photoelectric element 110 that accumulates a charge corresponding to the amount of received light in a readable manner is formed for each image pickup pixel. On the surface of the semiconductor substrate 101, an electrode 102 for reading the stored charge from the photoelectric element 110 at a predetermined read timing is formed so as to be connected to the photoelectric element 110. An interlayer insulating film 103 is formed so as to cover almost the entire surfaces of the semiconductor substrate 101 and the electrodes 102. At a predetermined position on the surface of the interlayer insulating film 103, a light-shielding film 104 having an opening so as not to optically cover the region of each imaging pixel is formed. With this light shielding film 104,
Optical crosstalk or stray light between adjacent imaging pixels is prevented. The light shielding film 10
4 and the interlayer insulating film 103 exposed from the opening
Protective film 105 is formed to cover the surface of. A flattening film 106 is formed on the surface of the protective film 105 so as to fill the unevenness of the protective film 105, and the surface of the flattened film 106 has higher flatness than the unevenness of the protective film 105. Has become something. A color filter 107 having a predetermined pattern is formed on the surface of the flattening film 106. An OPV film (overpassivation film) 108 for protecting the color filter 106 and the entire lower layer is formed so as to cover almost the entire surface of the color filter 107.

As described above, in a solid-state imaging device in which a conventional color filter is directly formed on a semiconductor substrate, the flattening film 10 whose surface is flattened by filling the unevenness of the protective film 105.
The color filter 107 is formed on the surface of No. 6 to make the surface of the color filter 107 on the light incident side flat.

[0008]

However, in the solid-state imaging device having the structure in which the color filter 107 is formed on the semiconductor substrate 101 as described above, and the method of manufacturing the same, the step of forming the flattening film 106 and the OPV film 108 are omitted. Since it is formed, its structure and manufacturing method are complicated, and a long time is required for the manufacturing process, which hinders improvement in throughput and cost reduction.

[0009] In spite of the disadvantage that such a structure and a process are complicated, the flattening film 1 is formed.
06 and the OPV film 108 are easily formed in the step of forming the film, and the defect generation rate of the completed solid-state imaging device is increased or the manufacturing yield is reduced due to the generation of defects of the films themselves. There is a problem.

In addition, the light from the subject must be flattened
06 and the OPV film 108 to reach the photoelectric element 110, the light from the subject is attenuated by the flattening film 106 and the OPV film 108, and the amount of light or light intensity reaching the photoelectric element 110 decreases. There's a problem.

The present invention has been made in view of the above problems, and has as its object to achieve simplification of the structure and the manufacturing process, reduction in cost, reduction in the time required for manufacturing, and further improvement in throughput and manufacturing yield. To provide a solid-state imaging device and a method of manufacturing the same.
Another object of the present invention is to provide a solid-state imaging device capable of eliminating defects and defects caused by a flattening film and an OPV film, and a method of manufacturing the same. Also, a solid-state imaging device capable of reducing the amount of light attenuation from the subject to the photoelectric element and reaching the photoelectric element to further improve the light quantity or light intensity and the manufacturing thereof It is to provide a method.

[0012]

According to the present invention, there is provided a solid-state imaging device which is connected to a semiconductor substrate on which a photoelectric element for reading out and accumulating a charge corresponding to a received light amount is formed for each imaging pixel, and to the photoelectric element. An electrode formed on the surface of the semiconductor substrate, an interlayer insulating film formed to cover the surface of the semiconductor substrate and the electrode, and a predetermined position on the surface of the interlayer insulating film. A light-shielding film formed by providing an uncovered opening; a protective film formed to cover the surface of the light-shielding film and the surface of the interlayer insulating film exposed from the opening of the light-shielding film; and a surface of the protective film. And a color filter formed on the protective film so as to be folded along the unevenness of the protective film.

Further, another solid-state imaging device according to the present invention includes:
A semiconductor substrate on which a photoelectric element that accumulates a charge corresponding to the amount of received light in a readable manner is formed for each imaging pixel; an electrode formed on the surface of the semiconductor substrate so as to be connected to the photoelectric element; An inter-layer insulating film formed so as to cover the surface of the light-shielding film; a light-shielding film formed by providing an opening that does not optically cover the imaging pixel at a predetermined position on the surface of the inter-layer insulating film; A protective film formed to cover the surface and the surface of the interlayer insulating film exposed from the opening of the light-shielding film, and a protective film formed on the surface of the protective film;
A color filter whose surface is flattened rather than unevenness of the surface of the protective film.

Still another solid-state imaging device according to the present invention is configured such that a photoelectric element for readably accumulating a charge corresponding to a received light amount is connected to a semiconductor substrate formed for each imaging pixel and to the photoelectric element. An electrode formed on the surface of the semiconductor substrate; an interlayer insulating film formed to cover the surface of the semiconductor substrate and the electrode; and a predetermined position on the surface of the interlayer insulating film. A light-shielding film formed with an opening that is not covered, and a color filter formed on the surface of the light-shielding film and the surface of the interlayer insulating film exposed from the opening of the light-shielding film so as to fold along the irregularities. It is provided with.

Still another aspect of the present invention provides a solid-state imaging device in which a photoelectric element for readingably accumulating a charge corresponding to an amount of received light is connected to a semiconductor substrate formed for each imaging pixel, and to the photoelectric element. An electrode formed on the surface of the semiconductor substrate; an interlayer insulating film formed to cover the surface of the semiconductor substrate and the electrode; and a predetermined position on the surface of the interlayer insulating film. A light-shielding film formed by providing an opening that is not covered; and a light-shielding film formed on the surface of the light-shielding film and the surface of the interlayer insulating film exposed from the opening of the light-shielding film. A color filter whose surface is flattened rather than the unevenness of the exposed interlayer insulating film.

A method for manufacturing a solid-state imaging device according to the present invention comprises:
Forming a photoelectric element that accumulates a charge according to the amount of received light in a readable manner so as to connect an electrode to the photoelectric element on a semiconductor substrate formed for each imaging pixel; and covering the surface of the semiconductor substrate and the electrode. Forming an interlayer insulating film, forming a light-shielding film having an opening at a predetermined position on the surface of the interlayer insulating film so as not to optically cover the imaging pixels; and Forming a protective film so as to cover the surface of the interlayer insulating film exposed from the opening of the light-shielding film, and forming a color filter on the surface of the protective film so as to fold directly along the unevenness of the protective film. Forming step.

Further, in another method of manufacturing a solid-state imaging device according to the present invention, a photoelectric element for readingably accumulating an electric charge corresponding to the amount of received light is formed by forming an electrode on a surface of a semiconductor substrate formed for each imaging pixel. Forming an interlayer insulating film so as to cover the surface of the semiconductor substrate and the electrode; and forming an optical image above the imaging pixel at a predetermined position on the surface of the interlayer insulating film. A step of forming a light-shielding film having an opening that is not covered, a step of forming a protective film so as to cover the surface of the light-shielding film and the surface of the interlayer insulating film exposed from the opening of the light-shielding film, and the surface of the protective film Directly forming a color filter whose surface is flatter than the unevenness of the surface of the protective film.

In still another method of manufacturing a solid-state image pickup device according to the present invention, a photoelectric element for accumulating a charge corresponding to the amount of received light so as to be readable is formed on a surface of a semiconductor substrate formed for each image pickup pixel. Forming an interlayer insulating film so as to cover the surface of the semiconductor substrate and the electrode; and forming an optical element above the imaging pixel at a predetermined position on the surface of the interlayer insulating film. Forming a light-shielding film having an opening which is not covered with the light-shielding film, and forming a color filter so as to be folded along irregularities on the surface of the light-shielding film and the surface of the interlayer insulating film exposed from the opening of the light-shielding film. Is included.

Still another method of manufacturing a solid-state imaging device according to the present invention is a method of manufacturing a solid-state imaging device. Forming an interlayer insulating film so as to cover the surfaces of the semiconductor substrate and the electrodes; and forming an optical image on the imaging pixel at a predetermined position on the surface of the interlayer insulating film. Forming a light-shielding film having an opening that is not covered, and on the surface of the light-shielding film and the surface of the interlayer insulating film exposed from the opening of the light-shielding film,
Forming a color filter having a flatter surface than the unevenness of the light-shielding film and the interlayer insulating film exposed from the opening of the light-shielding film.

In the solid-state imaging device and the method of manufacturing the same according to the present invention, by adopting the above-described configuration, the flattening film and the OPV film used in the conventional solid-state imaging device and the method of manufacturing the same and the formation thereof are formed. Steps for performing the steps are omitted.

In the above-described step of forming a color filter, the surface of the light-shielding film and the surface of the interlayer insulating film exposed from the opening of the light-shielding film are made flatter than the surface irregularities. By coating and forming a material film having such viscosity and patterning the material film, a color filter having a flat surface on the light incident side may be formed.

Alternatively, the step of forming the color filter is performed by forming a color filter material film on the surface of the light-shielding film and the surface of the interlayer insulating film exposed from the opening of the light-shielding film. By performing polishing, the surface of the protective film may be planarized more than the unevenness of the surface to form a color filter having a flat surface on the light incident side.

[0023]

Embodiments of the present invention will be described below in detail with reference to the drawings.

FIG. 1 shows a schematic configuration of a solid-state imaging device according to a first embodiment of the present invention, and FIG. 5 shows a planar schematic configuration thereof. It is. In the following description, a method of manufacturing the solid-state imaging device according to the present embodiment will be described together with its schematic configuration for simplicity of illustration and description (the following embodiments are also described). Similar).

The solid-state imaging device according to the first embodiment comprises a semiconductor substrate 1, an electrode 2, an interlayer insulating film 3, a light shielding film 4, a protective film 5, and a color filter 71, each of which comprises: The main part of the imaging pixel is configured.

The semiconductor substrate 1 is provided with a photoelectric element 10 for accumulating a charge corresponding to the amount of received light in a readable manner for each image pickup pixel. The photoelectric elements 10 are arranged in each sensor unit 501 as schematically shown in FIG. 5, and are connected to each horizontal transfer register 502 via wiring provided on the semiconductor substrate 1. As the semiconductor substrate 1,
Using a Si wafer or the like suitably,
By using a so-called photofabrication technique, which is used for manufacturing a (large-scale integrated circuit), the photoelectric element 10 such as a photodiode can be formed for each imaging pixel.

An electrode 2 is formed on the semiconductor substrate 1 so as to be connected to the photoelectric element 10. This electrode 2
For example, it is possible to form an aluminum thin film or the like and pattern it by a dry etching method or a wet etching method to form a pattern connected to the photoelectric device 10.

The interlayer insulating film 3 is a transparent insulating film formed by, for example, a CVD (chemical vapor deposition) method so as to cover the entire surface of the semiconductor substrate 1 and the electrodes 2. As the interlayer insulating film 3, for example, a silicon nitride film (SiNx) or the like can be suitably used.

On the surface of the interlayer insulating film 3, there is formed a light-shielding film 4 having an opening so as not to optically cover the imaging pixels and optically covering other predetermined portions. . This light-shielding film 4 is formed by the interlayer insulating film 3.
It is electrically insulated from the photoelectric element 10 and the electrode 2 for each imaging pixel in the lower layer. The material of the light-shielding film 4 is, for example, a metal film having a high light-shielding property such as chromium oxide (CrO2) or a coating property obtained by dispersing a black pigment such as carbon black in a resin binder such as a transparent resist. It can be formed using a high photosensitive material or the like suitably.

A protective film 5 is formed so as to cover the surface of the light shielding film 4 and the entire surface of the interlayer insulating film 3 exposed from the opening of the light shielding film 4. This protective film 5 can be formed by a general material and a film forming method.

On the surface of the protective film 5, no flattening film as used in the conventional solid-state image pickup device is formed, and the protective film 5 is directly folded along the irregularities of the protective film 5. A color filter 71 is formed. Further, on the surface of the color filter 71, a passivation film corresponding to the OVP film used in the conventional solid-state imaging device is not formed.

As described above, the flattening film for flattening the lower layer of the color filter 71 and the OVP film covering the color filter 71, which are used in the conventional solid-state imaging device, are omitted at all.

The inventor of the present invention adopts the above-mentioned outline configuration to achieve flattening without impairing the productivity, optical function, durability and the like of the color filter 71 and other main parts in the solid-state imaging device. It was confirmed by various experiments and considerations that the film and the OVP film could be omitted altogether. That is, the solid-state imaging device having the above-described general configuration is manufactured, and a continuous test such as a continuous use durability test and a weather resistance test is performed to confirm a change in the imaging function. It was found that the evaluation criterion was satisfied without any breakage or the like.

Here, an overview of the flow in the development history of the conventional color filter is as follows.
A color filter was formed on the surface of a glass substrate or the like separately from the D chip, but on the color filters of the on-chip type, drawing on the stereotype of an era when such a color filter was separate from the CCD chip. In this case, a flattening film is formed to prepare a flat surface, a color filter is formed thereon, and an OV is formed on the color filter.
It was covered with a P film.

However, in the case of an on-chip type color filter, the material for forming the color filter is applied to the uneven surface without patterning the surface for forming the color filter using a flattening film. By doing so, a color filter can be formed without any practical problems.
The present inventor has confirmed through experiments as described above that the color filter itself can have practically sufficient weather resistance without being coated with the P film.

As described above, the flattening film and the OVP film as used in the conventional solid-state imaging device can be obtained without impairing the productivity, optical function, durability and the like of the color filter 71 and other main parts. Can be omitted altogether, and the overall structure and the manufacturing process of the solid-state imaging device can be simplified, the cost can be reduced, the time required for manufacturing can be shortened, and the throughput and the manufacturing yield can be further improved. Further, it is possible to completely eliminate a decrease in yield and a waste of material cost due to the occurrence of defects or defects in the flattening film and the OPV film. Further, it is possible to eliminate the attenuation of light between the flattening film and the OPV film on the way from the subject to the photoelectric element 10 and achieve further improvement of the light amount or light intensity reaching the photoelectric element 10. it can.

[Second Embodiment] FIG. 2 shows a schematic configuration of a solid-state imaging device according to a second embodiment of the present invention.

In the solid-state imaging device according to the second embodiment, the semiconductor substrate 1, the electrodes 2, the interlayer insulating film 3, the light-shielding film 4, and the protective film 5 are the same as those described in the first embodiment. Although formed in the same manner, the surface of the color filter 72 is formed so as to be flatter than the unevenness on the surface of the protective film 5 and to cause almost no unevenness.

The color filter 7 having such a flat surface
Two methods can be applied to form 2.

First, a color resist film or a resin film having good coloring properties such as a material having a low viscosity so that the surface becomes flatter than the unevenness of the surface of the protective film 5 is used as a material film of the color filter 72. For example, a method in which the color filter 72 is formed by applying by a spin coating method or the like and patterning the material film thereof is possible.

Second, a material film for the color filter 72 is formed on the surface of the protective film 5, and the surface is polished,
It is possible to form a flat color filter 72 having almost no irregularities on the surface.

[Third Embodiment] FIG. 3 shows a schematic configuration of a solid-state imaging device according to a third embodiment of the present invention.

The solid-state imaging device according to the third embodiment includes a semiconductor substrate 1, an electrode 2, an interlayer insulating film 3, a light-shielding film 4, and a color filter 73. The protective film 5 in the solid-state imaging device described in the first embodiment is omitted, and the configuration is simpler than that of the solid-state imaging device according to the first embodiment. . The color filter 73 is the first
In the same manner as in the first embodiment, it is folded along irregularities due to the structure of the lower layer.

Here, in order to replace the function of the omitted protective film 5, it is desirable to make the material of the color filter 73 similar to the material of the protective film 5, but it is not limited to this. Various other materials can be used as long as the material has good weather resistance and high covering properties.

The solid-state imaging device according to the third embodiment is manufactured, and a general test such as a continuous use durability test and a weather resistance test is performed to confirm a change in the imaging function. A result was obtained that the evaluation criteria were all satisfied without a decrease in function or breakage of the element.

[Fourth Embodiment] FIG. 4 shows a schematic configuration of a solid-state imaging device according to a fourth embodiment of the present invention.

In the solid-state imaging device according to the fourth embodiment, the semiconductor substrate 1, the electrode 2, the interlayer insulating film 3, the light shielding film 4
Are formed in the same manner as described in the third embodiment, but the surface of the color filter 74 is formed flat with almost no irregularities.

The color filter 7 having such a flat surface
4 can be applied by two methods.

First, a colored resist film of a low viscosity material or a resin film having good coloring properties such that the surface of the light-shielding film 4 and the surface of the interlayer insulating film 3 become flatter than the unevenness of the surface thereof. For example, a method of applying a material film of the color filter 74 by a spin coating method or the like and patterning the material film to form the color filter 74 is possible.

Second, a material film for the color filter 74 is formed on the surface of the protective film 5 and the surface is polished.
A method of forming a flat color filter 74 having almost no irregularities on the surface is possible. As a method of polishing the surface of the material film of the color filter 74, for example, a so-called CMP polishing method generally used in an LSI or the like can be applied. However, it is needless to say that the present invention is not limited only to such a CMP polishing method.

[0051]

As described above, claims 1 to 4
According to the method for manufacturing a solid-state imaging device according to any one of claims 5 to 12, or the method for manufacturing a solid-state imaging device according to any one of claims 5 to 12, the surface of a protective film, a light-shielding film, an interlayer insulating film, or the like has irregularities. A color filter is formed so as to fold along the surface, or a color filter is formed so that the surface becomes flatter than the unevenness. Therefore, the color filter is employed in a conventional solid-state imaging device and its manufacturing method. It is possible to completely omit the flattening film and the OPV film, and the steps for forming them, thereby simplifying the structure and the manufacturing process, reducing the cost, shortening the time required for the manufacturing, reducing the throughput and the manufacturing yield. There is an effect that further improvement can be achieved.

Further, since the flattening film and the OPV film are omitted, it is possible to completely reduce the yield of the solid-state imaging device as a whole and waste material costs due to the occurrence of such defects and defects. This has the effect of being able to be eliminated.

Further, the attenuation of light in the flattening film and the OPV film on the way from the subject to the photoelectric element is completely eliminated, and the light quantity or light intensity reaching the photoelectric element is further improved. It has the effect that it can be done.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view illustrating a schematic configuration of a solid-state imaging device according to a first embodiment of the present invention.

FIG. 2 is a cross-sectional view illustrating a schematic configuration of a solid-state imaging device according to a second embodiment of the present invention.

FIG. 3 is a cross-sectional view illustrating a schematic configuration of a solid-state imaging device according to a third embodiment of the present invention.

FIG. 4 is a cross-sectional view illustrating a schematic configuration of a solid-state imaging device according to a fourth embodiment of the present invention.

FIG. 5 is a diagram showing a planar schematic configuration of the solid-state imaging device according to the first embodiment of the present invention;

FIG. 6 is a cross-sectional view showing an example of a schematic configuration of a conventional solid-state imaging device in which a color filter is formed directly on a semiconductor substrate.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... Semiconductor substrate, 2 ... Electrode, 3 ... Interlayer insulating film, 4 ... Light shielding film, 5 ... Protective film, 71, 72, 73, 74 ... Color filter

Claims (12)

[Claims] 1. A semiconductor substrate formed for each image pickup pixel, wherein a photoelectric element for accumulating a charge corresponding to a received light amount in a readable manner is formed on a surface of the semiconductor substrate so as to be connected to the photoelectric element. An electrode, an interlayer insulating film formed so as to cover the surface of the semiconductor substrate and the electrode, and an opening not optically covering the imaging pixel at a predetermined position on the surface of the interlayer insulating film. A light-shielding film formed; a protective film formed to cover a surface of the light-shielding film and a surface of an interlayer insulating film exposed from an opening of the light-shielding film; and a protective film formed on the surface of the protective film. And a color filter formed so as to bend along the irregularities of the solid-state imaging device. 2. A semiconductor substrate in which a photoelectric element for accumulating a charge corresponding to an amount of received light in a readable manner is formed for each imaging pixel, and formed on a surface of the semiconductor substrate so as to be connected to the photoelectric element. An electrode, an interlayer insulating film formed so as to cover the surface of the semiconductor substrate and the electrode, and an opening not optically covering the imaging pixel at a predetermined position on the surface of the interlayer insulating film. A light-shielding film formed, a protective film formed so as to cover the surface of the light-shielding film and the surface of the interlayer insulating film exposed from the opening of the light-shielding film, and formed on the surface of the protective film. A solid-state imaging device, comprising: a color filter whose surface is flattened than unevenness of the surface of the protective film. 3. A semiconductor substrate formed for each image pickup pixel and having a photoelectric element for accumulating a charge corresponding to an amount of received light in a readable manner, and formed on a surface of the semiconductor substrate so as to be connected to the photoelectric element. An electrode, an interlayer insulating film formed so as to cover the surface of the semiconductor substrate and the electrode, and an opening not optically covering the imaging pixel at a predetermined position on the surface of the interlayer insulating film. A light-shielding film formed; and a color filter formed on the surface of the light-shielding film and the surface of the interlayer insulating film exposed from the opening of the light-shielding film so as to be folded along the irregularities. A solid-state imaging device characterized by the above-mentioned. 4. A semiconductor substrate formed for each image pickup pixel with a photoelectric element for accumulating a charge corresponding to an amount of received light in a readable manner, and formed on a surface of the semiconductor substrate so as to be connected to the photoelectric element. An electrode, an interlayer insulating film formed so as to cover the surface of the semiconductor substrate and the electrode, and an opening not optically covering the imaging pixel at a predetermined position on the surface of the interlayer insulating film. A light-shielding film formed, and an interlayer formed on the surface of the light-shielding film and the surface of the interlayer insulating film exposed from the opening of the light-shielding film, and exposed on the surface of the light-shielding film and the opening of the light-shielding film. A solid-state imaging device, comprising: a color filter whose surface is flattened rather than unevenness of an insulating film. 5. A step of forming an electrode on a semiconductor substrate on which a photoelectric element that accumulates a charge corresponding to the amount of received light in a readable manner for each imaging pixel so as to be connected to the photoelectric element; Forming an interlayer insulating film so as to cover the surface of the substrate and the electrode; forming a light-shielding film having an opening that does not optically cover the imaging pixels at a predetermined position on the surface of the interlayer insulating film; Forming a protective film so as to cover the surface of the light-shielding film and the surface of the interlayer insulating film exposed from the opening of the light-shielding film; and forming the protective film directly on the surface of the protective film. Forming a color filter so as to bend along irregularities. 6. A step of forming an electrode on a surface of a semiconductor substrate formed for each image pickup pixel so as to be connected to the photoelectric element, the photoelectric element accumulating the charge according to the amount of received light in a readable manner; Forming an interlayer insulating film so as to cover the surfaces of the semiconductor substrate and the electrode; anda light shielding film having an opening that does not optically cover the imaging pixels at a predetermined position on the surface of the interlayer insulating film. Forming a protective film so as to cover the surface of the light-shielding film and the surface of the interlayer insulating film exposed from the opening of the light-shielding film; and forming the protective film directly on the surface of the protective film. Forming a color filter whose surface is flatter than the unevenness of the surface of the film. 7. The step of forming the color filter,
On the surface of the protective film, a material film having a viscosity such that the surface becomes flatter than the unevenness of the surface of the protective film is applied and formed, and the material film is patterned to form the color filter. 7. The method for manufacturing a solid-state imaging device according to claim 6, wherein: 8. The step of forming the color filter,
A color filter material film is formed on the surface of the protective film, and the surface is polished to form a color filter having a surface that is flatter than the unevenness of the surface of the protective film. The method for manufacturing a solid-state imaging device according to claim 6. 9. A step of forming an electrode on a surface of a semiconductor substrate formed for each imaging pixel so as to be connected to the photoelectric element, the photoelectric element storing a charge corresponding to the amount of received light in a readable manner; Forming an interlayer insulating film so as to cover the surfaces of the semiconductor substrate and the electrode; anda light shielding film having an opening that does not optically cover the imaging pixels at a predetermined position on the surface of the interlayer insulating film. Forming a color filter on the surface of the light-shielding film and on the surface of the interlayer insulating film exposed from the opening of the light-shielding film so as to fold along the irregularities. Manufacturing method of a solid-state imaging device. 10. A step of forming an electrode on a surface of a semiconductor substrate formed for each imaging pixel so as to be connected to the photoelectric element, the photoelectric element accumulating a charge corresponding to the amount of received light in a readable manner; Forming an interlayer insulating film so as to cover the surfaces of the semiconductor substrate and the electrode; anda light shielding film having an opening that does not optically cover the imaging pixels at a predetermined position on the surface of the interlayer insulating film. Forming, on the surface of the light-shielding film and on the surface of the interlayer insulating film exposed from the opening of the light-shielding film, the unevenness of the light-shielding film and the interlayer insulating film exposed from the opening of the light-shielding film. Forming a color filter having a flat surface. 11. The step of forming the color filter comprises the steps of: forming a flatter surface on the surface of the light-shielding film and the surface of the interlayer insulating film exposed from the opening of the light-shielding film than unevenness of the surface. 11. The color filter according to claim 10, wherein a material film having such a viscosity is applied and formed, and the material film is patterned to form the color filter.
A manufacturing method of the solid-state imaging device according to the above. 12. The step of forming the color filter includes forming a color filter material film on a surface of the light shielding film and a surface of an interlayer insulating film exposed from an opening of the light shielding film. 11. The method of manufacturing a solid-state imaging device according to claim 10, wherein a color filter whose surface is flatter than unevenness of the surface of the protective film is formed by polishing.