JP2002215066A5 - - Google Patents

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JP2002215066A5
JP2002215066A5 JP2001010576A JP2001010576A JP2002215066A5 JP 2002215066 A5 JP2002215066 A5 JP 2002215066A5 JP 2001010576 A JP2001010576 A JP 2001010576A JP 2001010576 A JP2001010576 A JP 2001010576A JP 2002215066 A5 JP2002215066 A5 JP 2002215066A5
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light shielding
electro
region
shielding film
optical device
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【発明の名称】電気光学装置及びプロジェクタPatent application title: Electro-optical device and projector

Claims (15)

一対の第１及び第２基板間に電気光学物質が挟持されてなり、
前記第１基板上に、画素電極と、該画素電極に接続された薄膜トランジスタと、該薄膜トランジスタに接続されており前記薄膜トランジスタの上側に配置されると共に前記薄膜トランジスタのチャネル隣接領域、ソース領域及びドレイン領域のうち少なくとも一つに対向する領域に一の窓が開けられた配線と、前記薄膜トランジスタの少なくともチャネル領域を下側から覆う下側遮光膜とを備えており、
前記第２基板上に、前記一の窓を上側から覆う第１遮光膜を備えており、
前記第１遮光膜及び前記配線のうち少なくとも一方は、前記薄膜トランジスタの少なくとも前記チャネル領域を上側から覆うことを特徴とする電気光学装置。An electro-optical material is sandwiched between a pair of first and second substrates,
A pixel electrode, a thin film transistor connected to the pixel electrode, and a thin film transistor connected to the first substrate are disposed on the upper side of the thin film transistor and adjacent to a channel adjacent region, a source region and a drain region of the thin film transistor And a lower light shielding film covering at least a channel region of the thin film transistor from the lower side.
A first light shielding film is provided on the second substrate to cover the one window from the upper side,
At least one of the first light shielding film and the wiring covers at least the channel region of the thin film transistor from the upper side. 一対の第１及び第２基板間に電気光学物質が挟持されてなり、
前記第１基板上に、画素電極と、該画素電極に接続された薄膜トランジスタと、該薄膜トランジスタに接続された配線と、前記薄膜トランジスタの上側に配置されており各画素の非開口領域を少なくとも部分的に規定すると共に前記薄膜トランジスタのチャネル隣接領域、ソース領域及びドレイン領域のうち少なくとも一つに対向する領域に一の窓が開けられた内蔵遮光膜と、前記薄膜トランジスタの少なくともチャネル領域を下側から覆う下側遮光膜とを備えており、
前記第２基板上に、前記一の窓を上側から覆う第１遮光膜を備えており、
前記第１遮光膜及び前記内蔵遮光膜のうち少なくとも一方は、前記薄膜トランジスタの少なくとも前記チャネル領域を上側から覆うことを特徴とする電気光学装置。An electro-optical material is sandwiched between a pair of first and second substrates,
A pixel electrode, a thin film transistor connected to the pixel electrode, a wire connected to the thin film transistor, and an upper side of the thin film transistor are disposed on the first substrate at least partially A built-in light shielding film having a window opened in a region adjacent to at least one of a channel adjacent region, a source region and a drain region of the thin film transistor, and a lower side covering at least a channel region of the thin film transistor And a light shielding film,
A first light shielding film is provided on the second substrate to cover the one window from the upper side,
At least one of the first light shielding film and the built-in light shielding film covers at least the channel region of the thin film transistor from above. 前記配線は、前記薄膜トランジスタの上側に配置されており、前記配線には、平面的に見て前記窓に重なる領域に他の窓が開けられていることを特徴とする請求項２に記載の電気光学装置。The said wiring is arrange | positioned above the said thin-film transistor, The other window is opened in the area | region which overlaps with the said window in planar view, and the said wiring is characterized by the above-mentioned. Optical device. 前記一及び他の窓のうち上側に位置する方が下側に位置する方より大きいことを特徴とする請求項３に記載の電気光学装置。4. The electro-optical device according to claim 3, wherein the upper one of the one and the other windows is larger than the lower one. 前記内蔵遮光膜及び前記第１遮光膜は夫々、複数の帯状部分を含んでなり、
前記第１遮光膜を構成する帯状部分の幅は、前記内蔵遮光膜を構成する帯状部分の幅よりも狭いことを特徴とする請求項２から４のいずれか一項に記載の電気光学装置。Each of the built-in light shielding film and the first light shielding film includes a plurality of strip portions,
The electro-optical device according to any one of claims 2 to 4, wherein a width of a band-shaped portion constituting the first light shielding film is narrower than a width of a band-shaped portion constituting the built-in light shielding film. 前記内蔵遮光膜は、前記画素電極に付加される蓄積容量を構成する容量電極又は容量線としても機能することを特徴とする請求項２から５のいずれか一項に記載の電気光学装置。The electro-optical device according to any one of claims 2 to 5, wherein the built-in light shielding film also functions as a capacitor electrode or a capacitor line which constitutes a storage capacitor added to the pixel electrode. 前記内蔵遮光膜は、前記第１基板上で前記窓から遠ざかるに連れて低くなるように傾斜する部分を含むことを特徴とする請求項２から６のいずれか一項に記載の電気光学装置。The electro-optical device according to any one of claims 2 to 6, wherein the built-in light shielding film includes a portion which is inclined so as to become lower as it goes away from the window on the first substrate. 前記第１遮光膜は、前記配線に沿って伸びる複数の帯状部分を含んでなり、
前記帯状部分の幅は、前記配線の幅よりも狭いことを特徴とする請求項１から７のいずれか一項に記載の電気光学装置。The first light shielding film includes a plurality of strip portions extending along the wiring,
The electro-optical device according to any one of claims 1 to 7, wherein a width of the strip portion is narrower than a width of the wiring. 前記配線は、前記第１基板上で前記窓から遠ざかるに連れて低くなるように傾斜する部分を含むことを特徴とする請求項１から８のいずれか一項に記載の電気光学装置。The electro-optical device according to any one of claims 1 to 8, wherein the wiring includes a portion which is inclined so as to be lower on the first substrate as it goes away from the window. 前記チャネル隣接領域は、ＬＤＤ（Lightly Doped Structure）領域又はオフセット領域であることを特徴とする請求項１から９のいずれか一項に記載の電気光学装置。The electro-optical device according to any one of claims 1 to 9, wherein the channel adjacent region is a lightly doped structure (LDD) region or an offset region. 前記ソース領域の一部及び前記ドレイン領域の一部は夫々、コンタクトホール開孔領域とされており、
前記窓は、該コンタクトホール開孔領域にも開けられていることを特徴とする請求項１から１０のいずれか一項に記載の電気光学装置。Each of a part of the source region and a part of the drain region is a contact hole open area,
The electro-optical device according to any one of claims 1 to 10, wherein the window is also opened in the contact hole opening area. 前記窓は、前記チャネル領域に対向する領域にも開けられていることを特徴とする請求項１から１１のいずれか一項に記載の電気光学装置。The electro-optical device according to any one of claims 1 to 11, wherein the window is also opened in a region facing the channel region. 前記窓は、前記チャネル領域に対向する領域には開けられておらず、
前記チャネル領域の上側にゲート絶縁膜を介してゲート電極が配置されていることを特徴とする請求項１から１１のいずれか一項に記載の電気光学装置。The window is not open in the area opposite the channel area,
The electro-optical device according to any one of claims 1 to 11, wherein a gate electrode is disposed above the channel region via a gate insulating film. 前記第１遮光膜は、前記第１基板に対面する側に配置された光吸収層を含む多層膜からなることを特徴とする請求項１から１３のいずれか一項に記載の電気光学装置。The electro-optical device according to any one of claims 1 to 13, wherein the first light shielding film is a multilayer film including a light absorption layer disposed on the side facing the first substrate. 請求項１から１４のいずれか一項に記載の電気光学装置をライトバルブとして用いることを特徴とするプロジェクタ。A projector using the electro-optical device according to any one of claims 1 to 14 as a light valve.
JP2001010576A 2001-01-18 2001-01-18 Electro-optical device and projector Expired - Fee Related JP3729071B2 (en)

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JP2002215066A5 true JP2002215066A5 (en) 2004-12-24
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JP4021392B2 (en) * 2002-10-31 2007-12-12 セイコーエプソン株式会社 Electro-optical device and electronic apparatus
JP5258277B2 (en) 2006-12-26 2013-08-07 株式会社半導体エネルギー研究所 Liquid crystal display

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