JP2002212737A - Vapor growth apparatus and vapor growth method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a vapor growth apparatus capable of uniformly film forming by keeping the height of an apparatus using a heater for high temperature constant and treating simultaneously a lot of pieces of substrate, and a method therefor. SOLUTION: In the vapor growth apparatus having a plurality of substrate holders 2 which are arranged in a same casing 1, a resistant heater 4 for heating the substrate which is provided separately and adjacently to the under side or the upper side of the substrate holder 2, and the substrate 3 mounted on the substrate holder 2, the plurality of the substrate holders 2 are arranged in the horizontal direction and auxiliary heaters 10 for heating additionally the substrate 3 on the substrate holders 2 arranged in the ends are provided.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

[0001] 1. Field of the Invention [0002] The present invention relates to a vapor phase growth apparatus and a method for performing a film forming process by flowing a material gas in a horizontal direction.

[0002]

2. Description of the Related Art In semiconductor manufacturing, a substrate on which a film is to be formed is heated, and one or more kinds of material gases are caused to flow toward the substrate. A vapor deposition method for forming a film on a substrate is widely used.

[0003] In the vapor phase growth method, particularly when a film is formed on a plurality of substrates by flowing a material gas in a horizontal direction, a plurality of substrates are formed in order to increase a substrate processing capacity per volume of an apparatus for forming the film. The arrangement is performed in multiple stages in the vertical direction. As such an apparatus, for example, there is a vertical multi-stage type vapor phase growth apparatus disclosed in JP-A-9-246190.

FIG. 3 is a sectional view showing the structure of an example of a conventional vertical multi-stage vapor phase growth apparatus. In the housing 101,
Substrates 103 are arranged on a plurality of substrate holders 102 provided in multiple stages in the vertical direction, and a resistance heater 105 for heating the substrate is provided adjacent to a lower part of each substrate holder 102. The material gas sent into the housing 101 from the gas supply port 108 is heated when flowing on the heated substrate 103 to cause a chemical reaction, and becomes a thin film crystal to form the substrate 1.
Grow on 03. The material gas that has flowed off the substrate 103 is exhausted from the housing 101 through the gas exhaust port 109. According to such a vertical multi-stage vapor phase epitaxy apparatus, it is possible to simultaneously form a film on a plurality of substrates.

FIG. 4 is a configuration diagram showing an example of a post-type heater used for heating a substrate. FIG. 4A is a plan view, and FIG. 4B is a front view. The post-type heater,
A heater heating section 111 coated with a corrosion-resistant material such as SiC, a long electrode rod 112, and a heater heating section 1;
And an electrode 113 provided at an end of the electrode bar 112 at a distance from the electrode rod 112. Since the heater heat generating section 111 is coated with a material having high corrosion resistance, it can withstand a high-temperature corrosive environment even when a corrosive gas such as NH ₃ is used as a material gas. The electrode portion 113 which cannot be coated for energization is provided with a heater heating portion 11 which is a heating portion of the heater.
Since it is installed at the end of the long electrode rod 112 at a distance from 1, it is possible to lower the temperature of the electrode part and keep the temperature low, and it can be used especially for a heater used at a high temperature. Such a heater structure can withstand a high temperature and corrosive environment.

[0006]

The above-mentioned post-type heater requires a large installation space in the height direction due to the presence of the electrode rod. Therefore, the substrate holder arrangement structure of the vertical multi-stage type vapor phase growth apparatus is required. There is a problem that the height of the apparatus is increased when used.

SUMMARY OF THE INVENTION An object of the present invention is to provide a vapor phase growth apparatus and method capable of simultaneously processing a large number of substrates to form a uniform film while maintaining the height of the apparatus using a high temperature heater constant. It is to be.

[0008]

SUMMARY OF THE INVENTION The present invention comprises a plurality of substrate holders disposed in the same housing, a substrate heating resistance heater individually provided below or above each substrate holder, and a substrate heating device. A substrate mounted on a holder, a vapor growth apparatus for flowing a material gas in a horizontal direction into a housing to generate a film on the substrate surface, wherein the plurality of substrate holders are arranged in a horizontal direction. And an auxiliary heater for additionally heating the substrate on the substrate holder arranged at the end of the plurality of substrate holders.

According to the present invention, the resistance heaters for heating the substrate are individually installed close to above or below a plurality of substrate holders, and the plurality of substrate holders are arranged in a horizontal direction, so that the apparatus height can be set low. The apparatus height can be kept constant even when the number of substrate holders is increased, so that the apparatus can be installed without being limited by the height of the apparatus. That is, as in the case of a vapor phase growth apparatus in which substrate holders are arranged in multiple stages in the vertical direction, increasing the number of substrate holders does not increase the height of the apparatus and does not cause a problem in the installation place of the apparatus. In addition, by using an auxiliary heater in addition to the substrate heating resistance heater, the temperature drop at the end substrate is corrected, the temperature distribution on all the substrates arranged in the horizontal direction is kept constant, Uniformity can be improved.

[0010] The present invention also provides that the substrate heating resistance heater is a post-type heater including a horizontally arranged heater heat generating portion and an electrode rod extending from the heater heat generating portion and having an electrode at an end portion. Features.

According to the present invention, even when the substrate heating resistance heater is a post-type heater that requires a large installation space in the vertical direction, by disposing the post-type heater together with the substrate holder in the horizontal direction, If the substrate holders are arranged in multiple stages in the vertical direction, the device height, which increases extremely when the number of substrate holder stages is increased, can be set low, and the device height remains constant even when the number of substrate holders is increased. Since it can be maintained, the installation location of the device is not limited by the height of the device.

Further, according to the present invention, the plurality of substrate holders may include:
The auxiliary heaters are arranged in a line in a direction perpendicular to the direction in which the material gas flows, and the auxiliary heaters are provided outside both ends of the substrate holder row.

According to the present invention, the auxiliary heaters are provided on the outer sides of both ends of the substrate holders arranged in a line perpendicular to the direction in which the material gas flows, thereby compensating for the temperature drop at the substrates at both ends and being arranged in a line. The temperature distribution on all the substrates can be kept constant to form a uniform film.

Further, according to the present invention, a plurality of substrate holders are arranged in the same housing in a horizontal direction, and a plurality of substrate heating resistance heaters are individually provided below or above the substrate holders. In addition to the heating of the substrate, the vapor phase growth method is characterized in that the substrate on the substrate holder arranged at the end is additionally heated, and a material gas is flowed in a horizontal direction in the housing to form a film on the substrate surface. .

According to the present invention, a substrate is formed on a substrate holder by using an auxiliary heater in addition to a substrate heating resistance heater individually provided in a plurality of substrate holders arranged in a horizontal direction. By using a plurality of substrate holders placed in a device where the device height is kept low, the temperature drop on the end substrates can be compensated, and the temperature distribution on all substrates can be kept constant to achieve uniform film formation. A method can be provided.

[0016]

FIG. 1 is a block diagram showing a vapor phase growth apparatus according to an embodiment of the present invention. FIG. 1 (a)
FIG. 1B is a plan view, and FIG. 1B is a front view. The vapor phase growth apparatus includes a plurality of substrate holders 2 arranged in a housing 1 in a horizontal direction, a plurality of substrates 3 arranged one by one on each substrate holder 2, and a lower part of each substrate holder 2. And a post-type heater 4 which is a resistance heater for heating a substrate, which is disposed in close proximity to the substrate. The housing 1 is provided with a gas supply port 8 through which a material gas is supplied and a gas exhaust port 9 through which the supplied material gas is exhausted by passing over the substrate, according to the number of the substrate holders 2. Is provided. The post type heater 4 includes a heater heating section 5 coated with a corrosion resistant material, a long electrode rod 6 extending downward from the lower surface of the heater heating section 5, and an end of the electrode rod 6 with a distance from the heater heating section 5. And an electrode section 7 installed in the section. Electric power is supplied to the heater heating section 5 from a power supply (not shown) connected to the electrode section 7. Further, in the housing 1, auxiliary heaters 10 are installed outside the substrate holders at both ends of the plurality of substrate holders arranged in a row in the horizontal direction.

At the time of vapor phase growth, when a post-type heater 4 is energized to heat the substrate 3 and the substrate holder 2 while supplying a material gas in a horizontal direction from the gas supply port 8 into the housing 1, the supplied material is supplied. The gas is exhausted from the gas exhaust port 9 through the substrate 3 or the like. Some of the material gases supplied into the housing 1 are adsorbed on the substrate surface when passing near the substrate 3. The adsorbed material gas is heated and activated, causing a chemical reaction on the substrate surface to form a thin film on the substrate surface.

As described above, according to the vapor phase growth apparatus according to one embodiment of the present invention, post-type heaters suitable for use under high-temperature conditions are individually installed below and below a plurality of substrate holders, and the plurality of By arranging the substrate holders in one horizontal direction, the equipment height can be set low, and the equipment height can be kept constant even when the number of substrate holders is increased. There is no limitation. That is, as in the case of a vapor phase growth apparatus in which substrate holders are arranged in multiple stages in the vertical direction, the height of the apparatus is increased by increasing the number of substrate holder stages that are individually provided with post-type heaters that require a large installation space in the vertical direction. It does not increase the size and cause a problem in the installation place of the device.

In a vapor phase growth apparatus for simultaneously forming a film on a plurality of substrates, it is necessary to maintain the same temperature distribution on all the substrates in order to simultaneously form a film having the same thickness on all the substrates. is there. When the auxiliary heater 10 is not provided, as shown in FIG. 2B, the temperature distribution on the substrates disposed at both ends (end substrates) becomes lower than the temperature on the substrate disposed at the center. Cheap. When a plurality of substrate holders are arranged horizontally, in addition to the substrate heating resistance heater immediately below the substrate other than the end substrate, there is a substrate heating resistance heater adjacent to both sides of the substrate, whereas the end substrate is only adjacent to one side. This is because there is no substrate heating resistance heater, and the degree of heat dissipation from one side adjacent to the side where the substrate heating resistance heater is not present is large. Therefore, an auxiliary heater 10 is provided on one side adjacent to the end substrate on which the adjacent substrate resistance heater does not exist, and the heat corresponding to the heat dissipation from the one side is compensated for by an auxiliary heater 10 shown in FIG. As shown in (1), the same temperature distribution 51 can be obtained on all the substrates.

At the time of vapor phase growth, an electric power is supplied to the auxiliary heater 10 in addition to the post-type heater 4 which is a resistance heater for heating the substrate, and the substrate 3 and the substrate holder 2 are heated so as to have the same temperature distribution on all the substrates. While the gas supply port 8
When the material gas is supplied in a horizontal direction from inside the housing 1, the supplied material gas is exhausted from the gas exhaust port 9 through over the substrate 3 or the like. Of the material gases supplied into the housing 1,
The material gas adsorbed on the substrate surface when passing through the vicinity of the substrate 3 is similarly heated and activated on all the substrates, causing a chemical reaction on the substrate surface and causing a thin film of the same thickness on all the substrate surfaces. Is deposited as

As described above, according to the vapor phase epitaxy apparatus according to the embodiment of the present invention, the temperature drop at the end substrate is corrected by using the auxiliary heating resistance heater in addition to the substrate heating resistance heater. In addition, the uniformity of the film formation can be improved by keeping the temperature distribution on all the substrates arranged in the horizontal direction constant.

In one embodiment, the substrate holders need not be arranged in a line in a direction perpendicular to the direction in which the material gas flows, but may be arranged in a plurality of lines or in a circle. However, it is necessary to change the position of the auxiliary heater in accordance with the arrangement of the substrate holder so that the temperature distribution on all the substrates on the substrate holder becomes uniform.
For example, when the substrate holder is arranged in a circular shape, an auxiliary heater may be provided outside the circumference and above the substrate. According to this, it is possible to make the temperature distribution on the substrate holder located at the center of the circle and the substrate holder located on the circumference uniform.

In one embodiment, instead of using a post type heater as a resistance heater for heating a substrate, a cup type heater which is a kind of high temperature heater and has a cylindrical shape without a bottom surface and a round ceiling surface generates heat is used. May be used. The cup-type heater can be arranged in the same manner as when a post-type heater is used, and the same effect can be obtained.

In one embodiment, the substrate heating resistance heater may be set above the substrate 3 instead of being positioned below the substrate holder 2 as shown in FIG. When a post-type heater is used as the substrate heating resistance heater, the heater heat generating portion 5 is disposed close to above the substrate 3, and the long electrode rod 6 extends upward from the upper surface of the heater heat generating portion 5, and is located at a distance from the heater heat generating portion 5. The electrode part 7 is installed at the end of the electrode rod 6. This can also provide the same effect as when the device is positioned below the substrate holder.

Further, in one embodiment, instead of arranging one substrate in one substrate holder, a plurality of substrates may be arranged in one substrate holder. According to this, the number of substrate holders and resistance heaters for substrate heating can be suppressed, and if the substrate holder surface is sufficiently wide, substrates of various widths can be arranged to form a film.

[0026]

As described above, according to the present invention, post-type heaters suitable for use under high-temperature conditions are individually installed in the vicinity of a plurality of substrate holders, and these plurality of substrate holders are arranged in a horizontal direction. By doing so, the apparatus height can be set low, and the apparatus height can be kept constant even when the number of substrate holders is increased, so that the vapor deposition where the installation location of the apparatus is not limited by the apparatus height An apparatus can be provided. In addition, by using an auxiliary heating resistance heater in addition to the substrate heating resistance heater, the temperature drop at the end substrate is corrected, and the temperature distribution on all the substrates arranged in the horizontal direction is kept constant, and the film is formed. The present invention can provide a vapor phase growth apparatus and a method therefor with improved production uniformity and improved production efficiency.

[Brief description of the drawings]

FIG. 1 is a configuration diagram showing a vapor phase growth apparatus according to an embodiment of the present invention. FIG. 1A is a plan view, and FIG.
(B) is a front view.

FIG. 2A is a graph showing a temperature distribution along a line AA in FIG. 2A. FIG. 2B is a graph showing a temperature distribution along the line AA when the auxiliary heater 10 is not provided in FIG.

FIG. 3 is a cross-sectional view showing a configuration of an example of a conventional vertical multi-stage vapor deposition apparatus.

FIG. 4 is a configuration diagram illustrating an example of a post-type heater used for heating a substrate. FIG. 4A is a plan view, and FIG.
Is a front view.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Housing 2 Substrate holder 3 Substrate 4 Post type heater 5 Heater heating part 6 Electrode rod 7 Electrode part 8 Gas supply port 9 Gas exhaust port 10 Auxiliary heater

Claims (4)

[Claims] A plurality of substrate holders disposed in the same housing, a substrate heating resistance heater individually provided in proximity to a lower part or an upper part of each substrate holder, and a substrate installed on the substrate holder. A gas phase growth apparatus comprising: flowing a material gas horizontally in a housing to generate a film on a substrate surface; wherein the plurality of substrate holders are arranged in a horizontal direction; And an auxiliary heater for additionally heating the substrate on the substrate holder disposed at the end. 2. The substrate heater according to claim 1, wherein the substrate heating resistance heater is a post-type heater including a horizontally arranged heater heating portion and an electrode rod extending from the heater heating portion and having an electrode at an end portion. The vapor phase growth apparatus according to claim 1. 3. The substrate heater according to claim 1, wherein the plurality of substrate holders are arranged in a row in a direction perpendicular to a direction in which the material gas flows, and the auxiliary heaters are provided outside both ends of the substrate holder row. The vapor phase growth apparatus according to claim 1, wherein 4. A plurality of substrate holders are arranged in a horizontal direction in the same housing, and a substrate heating resistance heater is individually provided below or above the substrate holder, and the substrate is heated by the substrate heating resistance heater. In addition to the above, a substrate on a substrate holder provided at an end is additionally heated, and a material gas is caused to flow in a horizontal direction in the housing to form a film on the substrate surface.