JP2002212736A - Thin film deposition system - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a CVD system which is used for large-sized substrates and which is equipped with a partition plate having an area equivalent to or larger than the substrate becoming large-sized, having a structure such that the path is secured for excited species penetrating the partition plate, and gaseous starting materials or cleaning gases are introduced into a film deposition processing space, and having a variety of functions including control of the temperature of the partition plate itself. SOLUTION: The partition plate which separates the vacuum chamber to two rooms is composed of a plurality of stacked sheets mutually joined at the contact surfaces. The partition plate is provided with the temperature control means.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a chemical vapor deposition apparatus (hereinafter referred to as "CVD apparatus"), and more particularly to a CVD method suitable for forming a film on a large flat panel substrate.
It concerns the device.

[0002]

2. Description of the Related Art Conventionally, as a method for manufacturing a large-sized liquid crystal display, a method using a high-temperature polysilicon type TFT (thin film transistor) and a method using a low-temperature polysilicon type TFT are known. Type T
In a method of manufacturing a liquid crystal display using FT, for example, the entire process can be performed at a low temperature of 400 ° C. or less.
There is no need to use an expensive substrate such as quartz. In addition, since a driving circuit for driving a device such as a liquid crystal display can be formed on the substrate in the same manner, if the production yield is improved, the cost can be reduced, and the TFT can be reduced in size. The feature is that a high aperture ratio can be realized. Therefore, development for further improving the performance is being enthusiastically performed, and the production amount itself is expanding.

In the production of a liquid crystal display using a low-temperature polysilicon type TFT, when forming a suitable silicon oxide film as a gate insulating film at a low temperature, plasma CVD is used.

[0004] Among them, an earlier patent application, Japanese Patent Application No. Hei 11
The CVD apparatus proposed in US Pat. No. 5,157,695 generates plasma in a vacuum chamber to generate electrically neutral excited active species (referred to as “radical” in the present specification), and the radical and material gas are used. A film is formed on the substrate. In other words, the inside of the vacuum vessel is separated into a plasma discharge space and a film formation processing space by using a partition plate having a plurality of holes through which radicals pass, and a gas is introduced into the plasma discharge space to generate radicals by plasma. A radical is introduced into the film formation processing space through the plurality of holes of the partition plate,
A material gas is directly introduced into the film formation processing space (that is, without contacting the material gas with the plasma or radical,
Directly into the film formation processing space), and reacts the introduced radicals with the material gas in the film formation processing space to form a substrate (for example, 370 mm) disposed in the film formation processing space.
A method of forming a film on a glass substrate (× 470 mm) is employed.

That is, since a partition plate having the same area or more as the substrate to be enlarged is arranged at a position facing the substrate, and the vacuum vessel is divided into a plasma discharge space and a film formation processing space by two, the apparatus has a structure. Due to the partition plate, the substrate being formed, which is disposed on the side of the film formation processing space which is a space different from the plasma discharge space divided into two by the partition plate, is not directly exposed to plasma because of the partition plate.

The present applicant has further filed Japanese Patent Application No. 2000-188.
667, in the CVD apparatus of the basic form proposed in Japanese Patent Application No. 11-157694, a structure in which a plurality of plate bodies on which partition plates are laminated is joined to the contact surface between the plate bodies over the entire region. A thin film forming apparatus has been proposed.
This is because, when a thin film is formed using the CVD apparatus of the basic form proposed in Japanese Patent Application No. 11-157691, radicals generated in the plasma discharge space enter the internal space of the partition plate, and It is intended to prevent the radical and the material gas from coming into contact with each other in the internal space, and to form a thin film having good film quality.

[0007] In the CVD apparatus of the basic form proposed in Japanese Patent Application No. 11-157691, the surface of the partition plate on the side of the plasma discharge space is always exposed to plasma during the process, and its temperature continues to rise. . Furthermore, during the process, radiant heat from the substrate holder holding the substrate is also applied, the temperature of the partition plate rises, the gas temperature of the plasma discharge space changes, and the pressure of the plasma discharge space fluctuates. Are required to be maintained.

On the other hand, the structure of the CVD apparatus of the basic form proposed in Japanese Patent Application No. 11-157692 is such that the radical generated in the plasma discharge space and the source gas are brought into contact with each other in the vicinity of the gas introduction hole on the film formation processing space side. Since the film formation process proceeds in a limited area centered on the partition wall plate, which is caused to react, the place is contaminated with deposits or the like by the film formation. This is a major obstacle to production,
Periodic cleaning work needs to be performed after a predetermined number of processed substrates. If this cleaning can be performed more effectively, productivity can be improved.

In order to perform cleaning more effectively,
Although it is desirable that the partition plate can be heated, as described below, in the CVD apparatus of the basic mode proposed in Japanese Patent Application No. 11-157691, a temperature control mechanism capable of heating the partition plate is provided inside the partition plate. It was not easy.

That is, due to its structure, the partition plate is formed through a plurality of radical passage holes in the partition plate through which a material gas or a cleaning gas introduced from the film forming gas inlet to the film forming processing space is a radical passage. While preventing the backflow into the plasma generation space, and sufficiently promoting the film formation process in the film formation processing space, and allowing a sufficient amount of radicals generated in the plasma discharge space to pass through the radical passage hole. Therefore, it is not easy to form a sophisticated structure having various functions inside a partition plate having a predetermined thickness.

That is, in the CVD apparatus of the basic mode proposed in Japanese Patent Application No. 11-157691, the plurality of radical passage holes through which radicals pass have a gas flow rate in the holes of u, a substantial radical The length of the passage hole is L (in the embodiment shown in FIGS. 1, 2 and 3, the length is equal to the thickness of the partition plate 14), the mutual gas diffusion coefficient (the two kinds of gas on both sides of the hole). When the mutual gas diffusion coefficient is D, u
By forming so as to satisfy the condition of L / D> 1, there is no fear that the material gas introduced into the film formation processing space is diffused back to the plasma discharge space side.

However, after satisfying the above conditions, it is necessary to study L (substantial length of the radical passage hole) so as to secure a film forming rate suitable for mass production.

In consideration of the optimum thickness of the partition plate as described above, a passage for the radical to penetrate is secured for the partition plate having an area equal to or larger than the substrate to be enlarged, Alternatively, a partition plate having a structure capable of introducing a cleaning gas into the film formation processing space and having a sophisticated structure having several functions of controlling the temperature of the partition plate has not been realized.

When an organic gas is used as a source gas and a film is formed using radicals generated by plasma, the organic gas generally has a low vapor pressure, so that the ambient temperature must be maintained at a predetermined temperature or higher. For example, in the case of TEOS (tetraethoxysilane), it is necessary to maintain the temperature at 60 ° C. or higher in order to obtain a vapor pressure of 1300 Pa or higher.

In the method of forming a thin film by a CVD method, Cu
When a copper thin film is formed by hydrogen radical reduction using (hfac) ₂ (copper bishexafluoroacetylacetonate), it is necessary to maintain the temperature at 60 ° C. or higher in order to obtain a vapor pressure of 100 Pa or higher. And 30
Decomposition starts when heated to 0 ° C. or higher, so that appropriate temperature control is required.

As described above, the necessity of a partition plate capable of controlling the temperature is increasing in industry.

[0017]

SUMMARY OF THE INVENTION An object of the present invention is to provide a basic type of CVD proposed in Japanese Patent Application No. 11-157694.
The apparatus and the thin film forming apparatus submitted in Japanese Patent Application No. 2000-188667 are further developed, and a passage for the excited species to penetrate is secured for the partition plate having an area equal to or larger than the substrate to be enlarged. Alternatively, there is provided a CVD apparatus for a large-sized substrate having a structure capable of introducing a cleaning gas into a film formation processing space side and having a partition plate having several functions of controlling the temperature of the partition plate for the above-described reason. It is in.

[0018]

That is, in a thin film forming apparatus proposed by the present invention, the inside of a vacuum vessel is separated into a plasma discharge space and a film forming processing space by a partition plate, and the partition plate is provided therein. A first inner space that is isolated from the plasma discharge space and communicates with the film formation processing space through a plurality of diffusion holes, and has a plurality of holes that penetrate the plasma discharge space and the film formation processing space; Having a through hole. Then, a gas is introduced into the plasma discharge space to generate radicals by plasma, and the radicals are introduced into the film formation processing space through a plurality of through holes of the partition plate, and a material gas is introduced into the film formation processing space. Is directly introduced, and the introduced radicals react with the material gas in the film formation processing space to form a film on a substrate disposed in the film formation processing space.

Here, in the thin film forming apparatus proposed by the present invention, in order to solve the above-mentioned problem, the partition plate is formed by joining a plurality of laminated plate members at their contact surfaces. And a temperature control means.

In the above, the partition plate further includes a second internal space separated from the plasma discharge space and the film formation processing space therein, and the temperature control means provided in the partition plate is The heat exchange means or the heating means provided in the second internal space can be used.

When the temperature control means is a heat exchange means provided in the second internal space of the partition plate, this is realized by flowing a heat exchange material of a fluid into the second internal space. be able to.

In this case, the heat exchange material for the fluid is introduced into the second internal space of the partition plate by a nozzle attached to the partition plate through the vacuum vessel. The nozzle may be held in the vacuum vessel in a horizontally movable state via an airtight material, may be horizontally attached to the partition plate, and may be connected to the second internal space of the partition plate. .

On the other hand, when the temperature adjusting means is a heating means provided in the second internal space of the partition plate, it can be a heater arranged in the second internal space.

Further, the temperature adjusting means provided on the partition plate is realized by a heating means provided on an outer peripheral portion of a partition plate made of a material having high heat conductivity (for example, a partition plate made of aluminum). You can also.

In the thin film forming apparatus of the present invention,
The material gas directly introduced into the film forming process space is introduced into the first internal space of the partition plate by a nozzle attached to the partition plate through a vacuum vessel, and through the plurality of diffusion holes. It is assumed that the nozzle is introduced into the film formation processing space, and the nozzle is, as in the case of the fluid heat exchange material,
If it is held in a vacuum container in a horizontally movable state via an airtight material, and is horizontally attached to the partition plate and connected to the first internal space of the partition plate, the horizontal expansion due to the thermal expansion of the partition plate is achieved. This is advantageous because deformation in the direction can be absorbed.

[0026]

1 and 2 show a vacuum vessel 24 of a thin film forming apparatus according to the present invention in a plasma discharge space 15 (FIGS. 1 and 2).
FIGS. 1A and 1B show a first embodiment and a second embodiment of a partition plate 14 which is isolated between a middle and an upper part) and a film forming space 16 (a lower part in FIGS. 1 and 2). FIG. 2A is a sectional view, and FIG.
2 (b) and FIG. 2 (b) correspond to FIG. 1 (a) and FIG.
It is the top view which looked at the inside from XX in (a).

For example, Japanese Patent Application No. Hei 11
No. 157,695, the basic structure of the partition plate employed in the CVD apparatus of the basic form, that is, the gas flow velocity in the plurality of through holes 4 through which radicals pass, u, the substantial through hole Is L (FIGS. 1, 2 and 3).
In the illustrated embodiment, when the mutual gas diffusion coefficient (the mutual gas diffusion coefficient of the two gases on both sides of the through-hole) is D, uL / D> 1
Is adopted.

Also, the present applicant has filed Japanese Patent Application No. 2000-1886.
The structure proposed in 67, in which a plurality of stacked plate members are joined to each other over the entire surface and the contact surfaces between the plate members are joined to each other. Specifically, the partition plate 14 shown in FIGS.
Is a plurality of laminated plate bodies (upper plate 10, intermediate plate 11,
The gas-ejecting plate 12 on the film formation side is provided with a contact surface between the plate members (that is, a contact surface between the upper plate 10 and the intermediate plate 11, the intermediate plate 1).
1 and the film blowing side gas blowing plate 12) are brought into close contact with each other and joined to each other.

The upper plate 10, which constitutes these partition plates 14,
As a method of bringing the contact surfaces of the plate bodies of the intermediate plate 11 and the film-forming-side gas blowing plate 12 into close contact with each other over the entire surface and joining them together, for example, vacuum brazing, pressure welding, or the like can be used.

In the case of the partition plate 14 shown in FIG.
Heat exchange material inlets (or heat exchange material discharge ports) 6 and 7 through which a gas or liquid heat exchange material such as water, air, or oil can flow in a region where there is no joining between the heat exchange material and the intermediate plate 11. These are communicated with the second internal space 8 in the partition plate 14.

A material gas such as silane is supplied through a material gas inlet 28 into a region where there is no joining between the intermediate plate 11 and the film-forming side gas blowing plate 12 through a material gas inlet 28. A space that can be introduced into the diffusion space 2 is provided. The material gas passes through the material gas outlet 3 corresponding to the plurality of diffusion holes through which the material gas diffusion space 2 as the first internal space and the film formation processing space 16 pass. 16 can be introduced directly into the film formation processing space 16, that is, without coming into contact with plasma or radicals.

The material gas enters the material gas diffusion space 2 corresponding to the first internal space from the material gas introduction port 28, and diffuses here. Will be released.

The radicals generated in the plasma discharge space 15 are released through the through-holes 4 into the film formation processing space 16 and react with the material gas to perform the film formation.

Heat exchange material inlet (or heat exchange material outlet) 6
The gas or liquid heat exchange material such as water, air, oil, etc. introduced from (or 7) passes through the second internal space 8 during the energy of the plasma discharge space 15 and the film forming processing space 16.
Of the substrate holder 1 being heated by the heater 18
7 (FIGS. 4 and 5) absorbs the heat energy of the main body of the partition plate 14 whose temperature has increased due to the radiant heat from the heat exchange material 7 and is discharged outside through the heat exchange material discharge port 7. In addition, the plasma discharge space 1
As long as the plasma is not generated in the partition 5, the liquid heat exchange material can be introduced to heat the partition plate 14 in order to keep the temperature of the partition plate 14 constant.

The temperature of the heat exchange material discharged to the outside from the heat exchange material discharge port 7 is monitored (not shown), and the temperature of the heat exchange material to be introduced is controlled in accordance with the temperature, so that the partition plate is provided. Therefore, the temperature of the plasma discharge space 15 can be kept constant, thereby suppressing the pressure fluctuation and keeping the discharge state constant.

Further, when an organic gas is used as a material gas, the partition plate 14 may be condensed unless the temperature of the partition plate 14 is maintained at a temperature higher than the condensation point. By keeping the temperature of the partition plate 14 above the condensation point for each gas, condensation inside the partition plate 14 can be prevented.

In the case of the partition plate 14 shown in FIG. 2, a space (second internal space) in which the heater 9 and a detector capable of measuring the temperature of the partition plate 14 can be embedded is formed by the upper plate 10 and the intermediate plate 11.
Is provided in an area that is a space where there is no joining.

FIG. 2 shows a second embodiment of the present invention in which the heater 9 is incorporated inside the partition plate 14, which is a portion of the main body of the partition plate 14 having no through-hole, and which A detector or the like (not shown) capable of measuring the temperature of the heater 9 or the partition plate 14 in a region where there is no joining of the intermediate plate 11.
Is provided (a second internal space) in which can be embedded.

As in the embodiment shown in FIG. 1, by incorporating a heat detector (not shown) in addition to the heater, the temperature of the partition plate 14 is monitored and the power supplied to the heater 9 is controlled. Thus, the temperature of the partition plate 14 can be kept constant.

Although the heater 9 is incorporated in the embodiment shown in FIG. 2, the partition plate 14 is made of a material such as aluminum having high thermal conductivity so that the outer periphery of the partition plate 14 can be formed. Even when a heating means (for example, a heater) is attached, the same effect can be expected because the center of the partition plate can be heated by the high thermal conductivity of the partition plate 14 itself.

FIG. 3 shows the partition plate 14 of the embodiment shown in FIG.
FIG. 4 illustrates an embodiment of a mode of introducing a heat exchange material into the internal space 8 in FIG.

The partition plate 14 is fixed to the conductive material fixing portion 22 in the vacuum vessel 24, and the heat exchange material introduction port 6 from the outside (atmosphere side) of the vacuum vessel 24 penetrates the vacuum vessel 24. The nozzle 5 attached to the partition plate 14 communicates with the internal space 8 of the partition plate 14. Nozzle 5
Is held in a vacuum container 24 via an airtight material, for example, a heat-resistant O-ring 1, while being kept movable in the horizontal direction while maintaining the vacuum inside the vacuum container 24, and is mounted horizontally on the partition plate 14 to partition the partition wall. It is connected to the internal space 8 of the plate 14.

By adopting such a structure, the partition plate 14
Can absorb horizontal deformation due to thermal expansion of
In addition, the airtightness at the portion where the heat exchange material introduction port 6 is provided can be maintained.

The structure in which the nozzle 5 at the heat exchange material inlet 6 is connected to the internal space 8 of the partition plate 14 can be similarly applied to the heat exchange material outlet 7 and the material gas inlet 28. In this case, the material of the heat-resistant O-ring 1 used for maintaining the airtightness can be variously selected in consideration of the type and temperature of the heat exchange material, the type of the material gas, and the like.

FIG. 4 illustrates a preferred embodiment of the thin film forming apparatus according to the present invention, in which the partition plate 14 shown in FIG. 1 is employed.

The inside of the vacuum vessel 24 is
Are separated into two upper and lower chambers by a partition plate 14 (shown in FIGS. 1 and 2) which is maintained at the same ground potential as the vacuum vessel 24, and the upper chamber forms a plasma discharge space 15, The chamber forms a film formation processing space 16.

The plate-like electrode (high-frequency electrode) 31 is
1 is provided on the upper insulating member 21a of the insulating members 21a and 21b interposed between the upper container 12a constituting the vacuum container 24 and the lower end surface of the peripheral portion of the electrode 31. Is the upper container 12a constituting the vacuum container 24
Are attached so as to be in contact with the lower insulating member 21b of the insulating members 21a and 21b interposed therebetween.

The partition plate 14 has a desired specific thickness,
And has a generally planar shape, and further has a vacuum container 24
Has a planar shape similar to the horizontal cross-sectional shape.

In the thin film forming apparatus shown in FIG. 4, the region where the oxygen plasma 19 is generated in the plasma discharge space 15 is located at the center with the electrode 31 interposed therebetween, and the upper side constituting the partition plate 14 and the vacuum vessel 24. Is a portion surrounded by the container 12a. The electrode 31 has a plurality of holes 20a.

The glass substrate 11 is carried into the vacuum container 24 by a transfer robot (not shown),
It is arranged on a substrate holder 17 which is maintained at the ground potential which is the same potential as.

The substrate holder 17 provided in the film formation processing space 16 is maintained at a predetermined temperature in advance because the heater 18 is energized. The inside of the vacuum vessel 24 is evacuated by the evacuation mechanism 13, decompressed, and maintained in a predetermined vacuum state.

Next, oxygen gas is introduced into the plasma discharge space 15 through the oxygen gas introduction pipe 23a.

In this state, high-frequency power is supplied to the electrode 31 via the power supply rod 29 which is insulated from other metal parts. A discharge is generated by this high frequency power, and oxygen plasma 19 is generated around the electrode 31 in the plasma discharge space 15. By generating the oxygen plasma 19, radicals (excited active species), which are neutral excited species, are generated, and are introduced into the film formation processing space 16 through the through holes 4 provided in the partition plate 14. You.

On the other hand, a material gas, for example, silane is introduced into the material gas diffusion space 2 (FIGS. 1 to 3) corresponding to the first internal space of the partition plate 14 through the material gas inlet 28. Silane is introduced from the material gas outlet 3 directly into the film formation processing space 16, that is, without contacting plasma or radicals.

At this time, in the second internal space 8 inside the partition plate 14, a partition wall which rises in temperature due to the energy of the plasma discharge space 15 and the radiant heat from the substrate holder 17 in the film formation processing space 16 during film formation. In order to absorb the thermal energy of the plate 14 main body, or to heat and hold the partition plate 14 in a predetermined temperature range according to the process progressing in the film forming processing space 16, the heat exchange material inlet 6 through the nozzle 5 (Fig. 3)
, A gaseous or liquid heat exchange material such as water, air, oil or the like is introduced. The type of heat exchange material and its flow rate can be arbitrarily selected according to the set conditions for film formation (input power, film formation time, etc.).

When the material gas is in a liquid state at normal temperature and pressure, such as TEOS (tetraethoxysilane), the material gas is vaporized to an appropriate temperature at which a sufficient vapor pressure is secured, and then converted to a material gas. The material gas diffusion space 2 corresponding to the first internal space of the partition plate 14 through the gas inlet 28
(FIGS. 1 to 3). At this time, in order to prevent the TEOS gas introduced into the partition plate 14 from condensing and to maintain a sufficient vapor pressure, the partition plate 14 is maintained at 100 ° C. to reduce the vapor pressure. Approximately 11 KPa. As described above, by adjusting the TEOS gas inside the partition plate 14 to an appropriate temperature, the material gas vaporized to an appropriate temperature at which a sufficient vapor pressure is secured can be formed from the material gas outlet 3 into a film forming process. In the space 16, the film formation processing space 1 is directly provided, that is, without contacting plasma or radicals.
Introduce to 6.

As a result, the radicals and a material gas such as silane or TEOS contact for the first time in the film formation processing space 16 to cause a chemical reaction, and a silicon oxide film is deposited on the surface of the glass substrate 11. A thin film is formed.

When the cleaning operation is performed, for example, a cleaning gas such as NF ₃ is introduced into the plasma generation space 15 through the cleaning gas introduction pipe 23b in the same manner as in the case of the oxygen gas, and fluorine radicals are generated by the plasma. Is generated. The generated fluorine radicals, like the oxygen gas radicals, pass through the through holes 4 of the partition plate 14 and diffuse into the film forming processing space 16 to be cleaned. At this time, by heating the partition plate 14 to a predetermined temperature, the cleaning effect, that is, the etching rate for the film deposited in the film formation processing space 16 can be improved.

FIG. 5 shows the partition plate 1 shown in FIGS.
4 schematically shows another example of the thin film forming apparatus of the present invention in which the inside of the vacuum vessel 24 is divided into two chambers.

The characteristic configuration of the embodiment shown in FIG. 5 is such that an insulating member 21a is provided inside the ceiling of the upper container 12a constituting the vacuum container 24, and the electrode 31 is disposed below the insulating member 21a. Is a point. The electrode 31 does not have the hole 20a as in the embodiment shown in FIG. 4 and has a single plate shape. That is, the electrode 31 and the partition plate 14
Plasma discharge space 1 with parallel plate electrode structure
5 is formed.

The other structure is substantially the same as the structure of the embodiment shown in FIG. Therefore, in FIG. 5, each element substantially the same as the element described in FIG. 4 is denoted by the same reference numeral, and a detailed description thereof will not be repeated. Further, the operation and effect of the thin film forming apparatus of the embodiment shown in FIG. 5 are the same as those of the embodiment shown in FIG. 4, and therefore, the description thereof will not be repeated.

As described above, the preferred embodiments of the present invention have been described with reference to the accompanying drawings. However, the present invention is not limited to such embodiments, and has the technical scope understood from the description of the claims. It can be changed to various modes.

[0063]

According to the present invention, the inside of a vacuum vessel is separated into a plasma discharge space and a film formation processing space by a partition plate having a plurality of through holes through which radicals pass, and gas is introduced into the plasma discharge space. Radicals are generated by plasma, and the radicals are introduced into the film formation processing space through a plurality of through holes of the partition plate, and a material gas is directly introduced into the film formation processing space (that is, without contacting the plasma or the radicals). Then, in a thin film forming apparatus in which the introduced radicals react with the material gas in the film formation processing space to form a film on a substrate disposed in the film formation processing space, a partition plate during which plasma is not generated During the process, the temperature of the partition plate, which receives energy from the plasma discharge space and radiation heat from the substrate holder, can be kept constant. As a result, there is no effective pressure fluctuations in the plasma discharge space, it is possible to maintain a constant in a stable process conditions.

When a periodic cleaning operation is performed, the temperature can be adjusted so that effective cleaning can be performed by heating the partition plate.

Further, when the thin film forming apparatus of the present invention uses a liquid raw material such as an organic compound instead of the plasma CVD method for generating excited species in the plasma discharge space, the partition plate is formed by the vaporized liquid raw material. Temperature that does not condense
In addition, since it is possible to control the temperature at which thermal decomposition does not occur, it is possible to apply a thin film forming apparatus using a partition plate and made of a heat-sensitive organic compound such as an organic gas such as TEOS as a raw material. .

As means for controlling the temperature of the partition plate, a case where a cooling or heating fluid is introduced into the partition plate from outside the vacuum vessel, and a material gas is formed via the first internal space in the partition plate. When material gases are introduced into the partition plate for direct introduction into the membrane processing space, their inlets are structured to absorb horizontal deformation due to thermal expansion of the partition exposed to plasma during the process. Stable temperature control and introduction of a material gas that can prevent breakage, cracks, and the like at the mouth can be made possible.

[Brief description of the drawings]

FIG. 1 shows a first embodiment of a partition plate separated into two vacuum chambers of a thin film forming apparatus of the present invention,
(A) is a partially enlarged cross-sectional view, (b) is X in FIG.
The top view which looked at the inside from -X.

FIG. 2 shows a second embodiment of a partition plate separated into two vacuum chambers of the thin film forming apparatus of the present invention,
(A) is a partially enlarged cross-sectional view, (b) is X in FIG.
The top view which looked at the inside from -X.

FIG. 3 is a partially enlarged cross-sectional view of an attachment portion to a vacuum vessel, illustrating an embodiment of introducing a heat exchange material into an internal space of a partition plate.

FIG. 4 is a cross-sectional view illustrating the internal structure of the thin film forming apparatus of the present invention.

FIG. 5 is a cross-sectional view illustrating an internal structure of another thin film forming apparatus of the present invention.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 Heat-resistant O-ring 2 Material gas diffusion space (first internal space) 3 Material gas outlet 4 Through hole 5 Nozzle 6 Heat exchange material inlet 7 Heat exchange material outlet 8 Second internal space 9 Heater 10 Upper plate DESCRIPTION OF SYMBOLS 11 Intermediate plate 12 Film-forming side gas blowing plate 12a Upper container which forms a vacuum container 12b Lower container which forms a vacuum container 13 Exhaust mechanism 14 Partition plate 15 Plasma discharge space 16 Film-forming processing space 17 Substrate holder 18 Heater 19 Oxygen plasma 20a Holes in which plate-shaped electrodes (high-frequency electrodes) are formed 21a, 21b Insulating member 22 Conductive material fixing part 23a Oxygen gas introduction pipe 23b Cleaning gas introduction pipe 24 Vacuum container 25 Glass substrate 28 Material gas introduction port 29 Power introduction Rod 31 Plate-shaped electrode (high-frequency electrode)

 ──────────────────────────────────────────────────続 き Continued on the front page (72) Inventor Akira Kumagai 5-8-1, Yotsuya, Fuchu-shi, Tokyo Anelva Co., Ltd. F-term (reference) 4K030 EA05 FA01 KA12 KA25 KA46 5F045 AA08 AB32 AC01 AC02 AC11 AF07 EB02 EB03 EB06 EF05 EH12 EH18 EK05 EK10 EK27 GB05

Claims (7)

[Claims] 1. The vacuum vessel is separated into a plasma discharge space and a film formation processing space by a partition plate, and the partition plate is internally separated from the plasma discharge space and has a plurality of diffusion regions. A first internal space that communicates with the plasma discharge space and a film forming process space, and a plurality of through holes that penetrate the plasma discharge space and the film formation processing space. A gas is introduced into the space to generate radicals by plasma, and the radicals are introduced into the film formation processing space through a plurality of through holes of the partition plate, and a material gas is directly introduced into the film formation processing space.
In the apparatus for reacting the introduced radicals and the material gas in the film formation processing space and forming a film on a substrate arranged in the film formation processing space, the partition plate is formed by stacking a plurality of plate bodies. A thin film forming apparatus which is formed by being joined to each other at its contact surfaces and further comprising a temperature adjusting means. 2. The partition plate further includes a second internal space separated from the plasma discharge space and the film formation processing space therein, and the temperature control means provided on the partition plate includes The thin film forming apparatus according to claim 1, wherein the thin film forming apparatus is a heat exchange means or a heating means provided in the second internal space. 3. The heat exchange means provided in the second internal space of the partition plate is made by flowing a heat exchange material of a fluid into the second internal space. 2
The thin film forming apparatus as described in the above. 4. A heat exchange material for a fluid is introduced into a second internal space of the partition plate by a nozzle penetrating the vacuum vessel and attached to the partition plate, wherein the nozzle is: 4. The vacuum container is held in a horizontally movable state via an airtight material, is horizontally attached to the partition plate, and is connected to a second internal space of the partition plate. The thin film forming apparatus as described in the above. 5. The thin film forming apparatus according to claim 2, wherein the heating means provided in the second internal space of the partition plate comprises a heater arranged in the second internal space. 6. The thin film according to claim 1, wherein the temperature adjusting means provided on the partition plate is a heating means provided on an outer peripheral portion of the partition plate made of a material having high thermal conductivity. Forming equipment. 7. A material gas directly introduced into the film formation processing space is introduced into the first internal space of the partition plate by a nozzle attached to the partition plate through the vacuum vessel. Is introduced into the film formation processing space through the diffusion hole, the nozzle is held in the vacuum vessel in a horizontally movable state via an airtight material, and is horizontally attached to the partition plate. The thin film forming apparatus according to any one of claims 1 to 6, wherein the thin film forming apparatus is connected to a first internal space of the partition plate by a pressure switch.