JP2002204011A - Element substrate and its manufacturing method, and electrooptical device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To reduce wiring resistance in an element substrate having such nonlinear element as an MIM element, and the manufacturing method of the element substrate, and an electrooptical device using the element substrate. SOLUTION: A first conductor 11, a non-linear electric conductor 12, and a second conductor 13 are successively laminated on a substrate 1, nonlinear elements S1 and S2 having nonlinearity in current/voltage characteristics in the overlapped section are provided between wiring 2 for inputting signals and a pixel electrode 3. In this case, the first conductor 11 or the second conductor 13, and the wiring 2 for inputting signals and the pixel electrode 3 are formed by a high-conductivity metal layer having the same quality of material.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an element substrate used for an electro-optical device such as a liquid crystal display device, and more particularly to an element substrate having a non-linear element, a method of manufacturing the same, and an electro-optical device using the element substrate.

[0002]

2. Description of the Related Art Conventionally, in a liquid crystal display device, for example, a large number of pixel electrodes are arranged in a matrix on one of a pair of substrates sandwiching a liquid crystal layer of a liquid crystal panel, and each of the pixel electrodes has a current-voltage characteristic. A device driven via a nonlinear element having nonlinearity is known.

[Conventional Example 1] FIG. 68 is a partial plan view showing an example of a conventional element substrate used for a liquid crystal display device as described above, and FIG. 69 is a view showing an element portion taken along line AA in FIG. It is an expanded sectional view. This example uses a normal MI as a nonlinear element.
Each pixel has one M element. In the drawing, reference numeral 1 denotes an insulating substrate made of a transparent glass plate or the like, 2 denotes a signal input wiring provided on the substrate 1 in a stripe shape, and 3 denotes a pixel electrode provided between adjacent wirings 2. is there.

The wiring 2 is composed of a first conductor 11 and a non-linear electric conductor 12, and a pixel is formed on a second conductor 13 provided so as to cover a part of the non-linear electric conductor 12. The electrode 3 is conductively connected. The first conductor 1
1 and the non-linear electric conductor 12 and the second electric conductor 13
The MIM (Metal Insulator Metal) element S as a non-linear element having non-linearity in current-voltage characteristics is provided so as to partially overlap each other.

Conventionally, tantalum (Ta) is often used as the material of the first conductor 11, tantalum oxide (TaOx) is used as the nonlinear electric conductor 12, and current is used as the second conductor 13. Chromium (Cr) and titanium (T
i) and the like are often used. As the pixel electrode 3, a transparent ITO or the like is often used.

In manufacturing the above-mentioned element substrate, conventionally, for example, it is manufactured in the following manner. Figure 70
73 to 73 show an example of the manufacturing process, in which (a) is a plan view and (b) is a cross-sectional view of the element portion along a broken line in (a).

(1) First, a conductive film such as tantalum constituting the conductor 11 is formed on the substrate 1, and the conductive film is formed into a predetermined planar shape by photo-etching or the like, and wiring is formed as shown in FIG. The conductor 11 constituting a part of the second conductor 2 is formed. (2) A non-linear electric conductor layer 12 of tantalum oxide or the like is formed on the surface of the two conductors 11 by anodic oxidation or the like as shown in FIG. (3) Next, a conductive film made of chromium or the like constituting the second conductor 13 is formed, and the conductive film is formed into a predetermined planar shape by photoetching or the like, and as shown in FIG. The body 13 is formed. (4) Next, a film of ITO or the like constituting the pixel electrode is formed, and the film is patterned into a predetermined shape to form the pixel electrode 3 as shown in FIG.

[Conventional Example 2] FIG. 74 is a plan view of a part of an element substrate showing another conventional example, and FIG. 75 is an AA in FIG.
It is an expanded sectional view of an element part which follows a line. Members having the same functions as those of the first conventional example will be described with the same reference numerals.

In this embodiment, a so-called lateral type MIM element using one side surface of a first conductor as an element is provided for each pixel, and in the case of FIG.
An M element S is provided.

The wiring 2 is composed of a first conductor 11 and a non-linear electric conductor 12 in the same manner as in the prior art 1, and a second electric conductor provided so as to cover a part of the non-linear electric conductor 12. The pixel electrode 3 is conductively connected to the body 13. Then, the non-linear electric conductor 12 on the upper surface of the first conductor 11 is formed thick to form an insulating layer (barrier layer) 12 ′, and the first electric conductor 11 and the non-linear electric conductor 12 and the second
The portion where the conductor 13 overlaps is the MIM element S. The material of each of the above members is the same as that of the first conventional example.

In manufacturing the above-mentioned element substrate, conventionally, for example, it is manufactured in the following manner. FIG.
81 to 81 show an example of the manufacturing process, in which (a) is a plan view and (b) is a cross-sectional view of the element portion along a broken line in (a).

(1) First, a conductive film such as tantalum constituting the conductor 11 is formed on the substrate 1, and the conductive film is formed into a predetermined planar shape by photo-etching or the like, and wiring is formed as shown in FIG. The conductor 11 constituting a part of the second conductor 2 is formed. (2) An insulating layer 12 'made of tantalum oxide or the like is formed on the surfaces of both conductors 11 by anodic oxidation or thermal oxidation as shown in FIG. 77. (3) The insulating layer 12 'on the side surface of the conductor 11 is removed by photoetching or the like to leave the insulating layer 12' only on the upper surface of the conductor 11, as shown in FIG. (4) The above-mentioned conductor 11 is again anodized or thermally oxidized to form a non-linear electric conductor 12 on the side surface as shown in FIG. (5) Next, a conductive film made of chromium or the like constituting the second conductor 13 is formed, and the conductive film is formed into a predetermined planar shape by photoetching or the like, and as shown in FIG. The body 13 is formed. (6) Next, a film of ITO or the like constituting the pixel electrode is formed, and the film is patterned into a predetermined shape to form the pixel electrode 3 as shown in FIG.

Alternatively, as shown in FIG. 82, after forming a conductor 11 constituting a part of the wiring 2 on the substrate 1 in the same manner as in the above (1), a polyimide film or the like is formed on the conductor 11. By forming an insulating film, an insulating layer 12 'is formed as shown in FIG. 83, and then the conductor 11 is anodized or thermally oxidized to form a non-linear electric conduction on the side surface of the conductor 11 as shown in FIG. The body layer 12 is formed. Thereafter, the second conductor 13 and the pixel electrode 3 are formed in the same manner as in the above (5) and (6), thereby forming an element substrate having a lateral MIM element as shown in FIGS. 74 and 75. Has been manufactured.

[Conventional Example 3] FIG. 85 is a plan view of a part of an element substrate showing still another conventional example, and FIG.
It is an expanded sectional view of an element part which meets an A line.

In the present embodiment, between the wiring 2 and each pixel electrode 3, 2
The two ordinary MIM elements S1 and S2 are provided in series in a so-called back-to-back system, and a signal from the wiring 2 receives a first conductor 11, a non-linear electric conductor 12, and a second The element S is transmitted in the order of the conductor 13 and
2, the second conductor 13 and the nonlinear electric conductor 12
-It is transmitted in the order of the first conductor 11. Then, the configuration is such that the pixel electrode 3 is input from the first conductor 11 of the element S2.

In the present embodiment, the wiring 2 is composed of a first conductor 11 and a non-linear electric conductor 12, and the wiring 2 and the conductors 11 forming the elements S1 and S2 are formed.
The materials used for the material 13, the nonlinear electric conductor 12, and the pixel electrode 3 are the same as those used in the first conventional example.

In manufacturing the element substrate as described above, conventionally, for example, it is manufactured in the following manner. Fig. 87
92 show an example of the manufacturing process, in which (a) is a plan view and (b) is a cross-sectional view of the element portion along the broken line in (a).

(1) First, a conductive film such as tantalum constituting the conductor 11 is formed on the substrate 1, and the conductive film is formed into a predetermined planar shape by photo-etching to form the MIM element S1 as shown in FIG. Forming the first conductor 11 that forms part of S2 and the wiring 2; (2) Both the conductors 11 are anodized, and a non-linear electric conductor 1 such as tantalum oxide is formed on the surface thereof as shown in FIG.
Form 2 (3) Next, as shown in FIG. 89, two elements S1 and S2
And the non-linear electric conductor between them are cut off by photoetching or the like. (4) In order to make conductive connection with a pixel electrode to be described later, as shown in FIG. 90, a part of the nonlinear electric conductor 12 on one element S2 side is peeled off by etching or the like to expose the first conductor 11. Let it. (5) Next, a conductive film of chromium or the like constituting the second conductor 13 is formed, and the conductive film is formed into a predetermined planar shape by photoetching or the like, and as shown in FIG. To form (6) Then, ITO or the like that constitutes the pixel electrode is coated with a film,
The film is patterned into a predetermined shape to form the pixel electrode 3 as shown in FIG.

[Conventional Example 4] FIG. 93 is a plan view of an element substrate showing still another conventional example, and FIG. 94 is an enlarged sectional view of the element portion taken along line AA in FIG. In this example, two lateral MIM elements S1 are provided between the wiring 2 and each pixel electrode 3.
S2 is provided in series in a back-to-back system, and each of the MIM elements S1 and S2 is provided on the left and right side surfaces of the first conductor 11 formed between the wiring 2 and each pixel electrode 3. Have been.

The wiring 2 is a first conductor 11 in this embodiment.
And a non-linear electric conductor 12 and a second conductor 13, and a signal is mainly transmitted through the second conductor 13. In the element S1, a signal from the wiring 2 is transmitted from the second conductor 13 of the wiring 2 to the first conductor 11 between the wiring 2 and each pixel electrode 3 via the non-linear electric conductor 12. In the element S2, the light is transmitted from the first conductor 11 to the first conductor 11 between the pixel electrode 3 via the non-linear electric conductor 12. Then, the above signal is input to the pixel electrode 3 from the first conductor 11 of the element S2. The material of each component described above is the same as in the above-described example.

In manufacturing the element substrate as described above, conventionally, for example, it is manufactured in the following manner. FIG. 95
101 to 101 show an example of the manufacturing process, in which (a) is a plan view and (b) is a cross-sectional view of the element portion along the broken line in (a).

(1) First, a conductive film such as tantalum forming the conductor 11 is formed on the substrate 1, and the conductive film is formed into a predetermined planar shape by photoetching or the like, and the MIM is formed as shown in FIG. The conductors 11 forming a part of the elements S1 and S2 and the wiring 2 are formed. (2) An insulating layer 12 'of tantalum oxide or the like is formed on the surfaces of the conductors 11 by anodic oxidation or thermal oxidation as shown in FIG. 96. (3) The insulating layer 12 'on the side surface of the conductor 11 is removed by photoetching or the like to leave the insulating layer 12' only on the upper surface of the conductor 11, as shown in FIG. (4) The conductor 11 is again subjected to anodic oxidation or thermal oxidation to form a non-linear electric conductor 12 on the side surface as shown in FIG. (5) Next, as shown in FIG. 99, the conductor 11 and the insulating layer and the non-linear electric conductor 12 between the part constituting the element and the part constituting the wiring 2 are removed by photoetching or the like. (6) Then, a conductive film such as chromium constituting the second conductor 13 is formed, and the conductive film is formed into a predetermined planar shape by photoetching or the like, and as shown in FIG. To form (7) Next, a film of ITO or the like constituting the pixel electrode is formed, and the film is patterned into a predetermined shape to form the pixel electrode 3 as shown in FIG.

[0023]

However, when the signal input wiring is formed of a conductor such as tantalum and anodized tantalum oxide as described above, the wiring resistance is relatively large, and particularly large. At the time of screen conversion, image quality is significantly deteriorated due to crosstalk and the like. There were also problems such as an increase in drive voltage.

The present invention has been proposed in view of the above problems, and has a low wiring resistance, a low occurrence of crosstalk, etc., and can be driven at a low voltage, and an electro-optical device using the same. An object of the present invention is to provide a device and a method for manufacturing an element substrate capable of easily and inexpensively manufacturing such an element substrate.

[0025]

In order to achieve the above object, an element substrate, a method of manufacturing the same, and an electro-optical device according to the present invention have the following configurations.

That is, the element substrate according to the present invention is formed by sequentially laminating a first conductor, a non-linear electric conductor, and a second conductor on the substrate, and the overlapping portion thereof is non-linear in current-voltage characteristics. In a device substrate in which a non-linear element having a property is provided between a signal input wiring and a pixel electrode, the first or second conductor constituting the non-linear element is the same as the signal input wiring and the pixel electrode. It is characterized by being formed of a highly conductive metal layer of a material.

Further, a method for manufacturing an element substrate according to the present invention comprises:
A first conductor, a non-linear electric conductor, and a second conductor are sequentially laminated on a substrate, and a non-linear element having a non-linear current-voltage characteristic in an overlapping portion thereof is formed by a signal input wiring and a pixel. In the method of manufacturing an element substrate provided between the first electrode and the second electrode, the first or second conductor constituting the non-linear element, the signal input wiring, and the pixel electrode are simultaneously formed of a highly conductive metal layer of the same material. It is characterized in that it is formed.

Further, in the electro-optical device according to the present invention, a first conductor, a non-linear electric conductor and a second conductor are sequentially laminated on a substrate, and an overlapping portion thereof has a non-linear characteristic in current-voltage characteristics. A non-linear element having a characteristic is provided between the signal input wiring and the pixel electrode, and the first or second conductor constituting the non-linear element and the signal input wiring and the pixel electrode are formed of a high conductive material of the same material. An element substrate formed of a conductive metal layer, a counter substrate having electrodes on its inner surface facing the element substrate, and a liquid crystal layer interposed between the two substrates.

[0029]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, an element substrate according to the present invention, a method of manufacturing the same, and an electro-optical device using the element substrate will be described in detail with reference to the drawings.

Embodiment 1 FIG. 1 is a plan view of an element substrate showing one embodiment of the present invention, and FIG. 2 is an enlarged sectional view of an element section taken along line AA in FIG. Hereinafter, members having the same functions as those of the above-described conventional example will be described with the same reference numerals.

In this embodiment, a single ordinary MIM element S is provided for each pixel as a non-linear element, similarly to the above-mentioned conventional example 1, and the inside of the conductor 11 forming the wiring 2 is
The high conductive metal layer 4 is formed along the longitudinal direction of the wiring 2. In particular, in this example, aluminum is used as the highly conductive metal layer 4.

The aluminum may be aluminum alone or an aluminum alloy. The aluminum alloy may be, for example, Al-C
A u alloy, an Al-Mg alloy, or the like can be used. Further, not only aluminum but also copper alone, a copper alloy or other highly conductive metal materials may be used. As the material of the other members, the same materials as in the conventional example can be used.

By providing the highly conductive metal layer 4 along the wiring 2 as described above, the wiring resistance of the wiring 2 can be reduced.

In manufacturing the above-mentioned element substrate,
For example, it can be manufactured in the following manner. First, as shown in FIG. 3, a highly conductive metal thin film made of aluminum or the like constituting the highly conductive metal layer 4 is formed on the substrate 1 by sputtering or the like, and is patterned into a predetermined shape by photo etching or the like. A highly conductive metal layer 4 is formed.

On the highly conductive metal layer 4, the conventional example 1
In the same manner as described above, a film of tantalum or the like constituting the first conductor 11 is formed, and the film is formed into a predetermined planar shape by photoetching to form the first conductor 11 as shown in FIG. Thereafter, the nonlinear electric conductor layer 12, the second conductor 13, and the pixel electrode 3 may be formed in the same manner as in the first conventional example.

FIG. 5 is a longitudinal sectional view of an embodiment in which a liquid crystal display device as an electro-optical device is constituted by using the above-mentioned element substrate. In the drawing, reference numeral 1 denotes an element substrate configured as shown in FIGS. 1 and 2, reference numeral 51 denotes an opposing substrate arranged so as to oppose the element substrate 1, and an opposing electrode 52 is provided on the inner surface thereof. The liquid crystal layer 53 is interposed between 51.

As described above, the element substrate 1 is provided with the highly conductive metal layer 4 along the signal input wiring 2, thereby reducing the wiring resistance. It is possible to obtain.

[Embodiment 2] FIG. 6 is a plan view of an element substrate showing another embodiment of the present invention, and FIG.
It is an expanded sectional view of an element part which follows a line.

In the present embodiment, a single lateral type MIM element S is provided for each pixel as a nonlinear element as in the above-mentioned conventional example 2, and the conductors 11 constituting the wiring 2 are formed in the same manner as in the above-mentioned first embodiment. Is formed with a highly conductive metal layer 4 made of aluminum along the longitudinal direction of the wiring 2.

In manufacturing the above element substrate,
Although omitted in the figure, for example, a highly conductive metal layer 4 is formed on the substrate 1 in advance in the same manner as in the first embodiment, and thereafter, the processes shown in FIGS. The first conductor 11 and the insulating layer 1 are sequentially executed as described above.
2 ′, the nonlinear electric conductor layer 12, the second conductor 13, and the pixel electrode 3 may be formed. Also, in the same manner as in the conventional example 2, the process shown in FIGS.
84 can also be manufactured.

The material of the highly conductive metal layer 4 can be appropriately changed in the same manner as in the first embodiment, and the materials of the other members can be the same as those of the conventional example. The same applies to the embodiments described later. Also in this example, an electro-optical device such as a liquid crystal display device similar to that shown in FIG. 5 can be formed using the above-described element substrate, and a good display can be obtained at a low voltage.

[Embodiment 3] FIG. 8 is a plan view of an element substrate showing still another embodiment of the present invention, and FIG.
It is sectional drawing of the element part which follows the -A line.

In the present embodiment, similar to the above-described conventional example 3, the conventional MIM elements S1 and S2 of the back-to-back system are provided as nonlinear elements, A highly conductive metal layer 4 made of aluminum is provided inside the body 11 along the longitudinal direction of the wiring 2.
Is formed.

In manufacturing the above element substrate,
Although not shown in the drawings in this embodiment, for example,
The highly conductive metal layer 4 is previously formed on the substrate 1 in the same manner as described above, and thereafter, the processes shown in FIGS.
1. The nonlinear electric conductor layer 12, the second conductor 13, and the pixel electrode 3 may be formed.

Also in this embodiment, an electro-optical device such as a liquid crystal display device similar to that shown in FIG. 5 can be formed by using the above-mentioned element substrate, and a good display can be obtained at a low voltage. .

[Embodiment 4] FIG. 10 is a plan view of an element substrate showing still another embodiment according to the present invention, and FIG. 11 is an enlarged sectional view of the element section taken along line AA in FIG.

In this embodiment, as in the case of the conventional example 4, a back-to-back type lateral MI as a nonlinear element is used.
In the element provided with the M elements S1 and S2, a high conductive metal layer 4 made of aluminum or the like is provided along the longitudinal direction of the wiring 2 inside the conductor 11 forming the wiring 2 in the same manner as in the above example.
Is formed. By providing the highly conductive metal layer 4 along the wiring 2 as described above, the wiring resistance of the wiring 2 can be reduced.

In manufacturing the above element substrate,
For example, it can be manufactured in the following manner. 12 to 19 show an example of the manufacturing process, in which (a) is a plan view and (b) is a cross-sectional view of the element portion along a broken line in (a).

(1) First, a highly conductive metal layer 4
A highly conductive metal thin film made of aluminum or the like is formed by sputtering or the like, and is patterned into a predetermined shape by photoetching or the like to form a highly conductive metal layer 4 on the substrate 1 as shown in FIG. I do. (2) A film of tantalum or the like constituting the first conductor 11 is formed on the highly conductive metal layer 4 in the same manner as in the conventional example 1,
The film is formed into a predetermined planar shape by photoetching to form a first conductor 11 as shown in FIG. (3) The first conductor 11 is anodized or thermally oxidized to form an insulating layer 12 'of tantalum oxide or the like on the surface of the first conductor 11, as shown in FIG. (4) The insulating layer 12 'on the side surface of the first conductor 11 is removed by photo etching or the like as shown in FIG. (5) Next, as shown in FIG. 16, a non-linear electric conductor 12 is formed on the side surface of the first conductor 11. (6) Then, the first conductor 11 and the non-linear electric conductor 12 between the part constituting the element and the part constituting the wiring 2 are removed by photoetching or the like as shown in FIG. At this time, a contact hole H for conducting the conductive connection between the highly conductive metal layer 4 and the second conductor 13 is formed at the same time by the above-mentioned photoetching. At this time, the highly conductive metal layer 4 is used as an etching stopper. Can be used. (7) Next, a film of chromium or the like constituting the second conductor 13 is formed, and the film is formed into a predetermined planar shape by photoetching or the like to form the second conductor 13 as shown in FIG. I do. (8) Finally, a film of ITO or the like forming the pixel electrode may be formed, and the film may be patterned into a predetermined shape by etching or the like to form the pixel electrode 3 as shown in FIG.

If the highly conductive metal layer 4 made of aluminum or the like is exposed to the outside when the above-described pixel electrode 3 is etched, it is difficult to select an etching material. When covered with the conductor 11 or the like, there is an advantage that the above-mentioned inconvenience is not caused, and there is no problem in rubbing resistance when used in a liquid crystal display device or the like.

Also in this embodiment, the insulating layer 12 'can be formed by thermal oxidation, or can be formed of an insulating member such as a polyimide film, as in the case of the conventional example 2.
Further, in the above embodiment, the contact hole H was formed to electrically connect the highly conductive metal layer 4 and the second conductor 13. However, the insulator 12 in the wiring 2 was peeled off, and the second The conductors 13 can be directly connected to each other for connection.

FIG. 20 is a longitudinal sectional view of an embodiment in which a liquid crystal display device as an electro-optical device is constituted by using the above-mentioned element substrate. In the drawing, reference numeral 1 denotes an element substrate configured as shown in FIGS. 10 and 11, reference numeral 51 denotes an opposing substrate disposed so as to oppose the element substrate 1, and an opposing electrode 52 is provided on the inner surface thereof. The liquid crystal layer 53 is interposed between 51.

As described above, the element substrate 1 is provided with the highly conductive metal layer 4 along the signal input wiring 2, thereby reducing the wiring resistance. It is possible to obtain.

[Embodiment 5] FIG. 21 is a plan view of an element substrate showing still another embodiment according to the present invention, and FIG. 22 is an enlarged sectional view of the element portion taken along line AA in FIG.

In the present embodiment, a highly conductive metal layer 4 made of aluminum or the like is formed inside the conductor 11 of the wiring 2 along the longitudinal direction of the wiring 2 in the same manner as in the fourth embodiment. The two lateral elements S1 and S2 of the back-to-back method in Example 4 are connected to the side surface of the wiring 2;
It is provided on one side surface of the conductor 11 between the wiring 2 and the pixel electrode 3.

That is, one element S1 is composed of the side surface of the conductor 11 constituting the wiring 2, the nonlinear electric conductor 12 and the second conductor 13 formed on the surface, and the other element S2 is Conductor 11 between wiring 2 and pixel electrode 3
And a non-linear electric conductor 12 and a second electric conductor 13 formed on the surface thereof. The pixel electrode 3 is configured to be directly conductively connected to the surface of the conductor 11 between the wiring 2 and the pixel electrode 3, and the pixel electrode 3 and the conductor 11, the nonlinear electric conductor 12, and the conductor 13 The same material as that of the above-mentioned conventional example is used.

According to the above configuration, there is an advantage that the contact hole H for electrically connecting the conductor 11 of the wiring 2 and the second conductor 13 is not required as in the fourth embodiment.

In manufacturing the above element substrate,
For example, it can be manufactured in the following manner. First, the conductor 11 and the nonlinear electric conductor 12 are formed on the substrate 1 in the same manner according to the manufacturing processes (1) to (5) in the fourth embodiment. Then, as shown in FIG.
The insulating layer 12 ′ on the conductor 11 and the part of the nonlinear electric conductor 12 are separated by photoetching or the like, and the conductor 11 and the nonlinear electric conduction between the part constituting the element S 2 and the wiring 2 are removed. The body 12 is cut off by photoetching or the like. Next, after forming the second conductor 13 as shown in FIG. 24, the pixel electrode 3 may be formed and connected to the conductor 11 as shown in FIG.

In the above embodiment, a part of the non-linear electric conductor 12 on the first conductor 11 is peeled off and the pixel electrode 3 and the first
The pixel electrode 3 and the first conductor 11 are formed by forming a contact hole in the nonlinear electric conductor 12 on the first conductor 11 similar to that of the first embodiment. 11 can also be connected. Also, in this embodiment, the insulating layer 12 'can be formed by thermal oxidation, or can be formed of an insulating member such as a polyimide film, similarly to the second conventional example.

Although not shown in the figure in this example, an electro-optical device such as a liquid crystal display device similar to that shown in FIG. 20 can be formed by using the above-described element substrate. Can be obtained.

[Embodiment 6] FIG. 26 is a plan view of an element substrate showing still another embodiment according to the present invention, and FIG. 27 is an enlarged sectional view of the element portion taken along line AA in FIG.

In the present embodiment, a single ordinary MIM element S is provided for each pixel as a non-linear element as in the first conventional example. Inside, a highly conductive metal layer 4 is formed along the longitudinal direction of the wiring 2, and the pixel electrode 3 is formed of a metal of the same material as the highly conductive metal layer 4.

The conductor 13 forming the wiring 2 as described above
When the highly conductive metal layer 4 is provided thereon, the wiring resistance can be reduced, and when the metal layer 4 is provided on the surface of the pixel electrode 3, the pixel electrode 3 can be used as a reflection layer. The highly conductive metal layer 4 and the metal layer 4 of the pixel electrode 3 are not necessarily made of the same material, but if they are made of the same material, they can be easily formed simultaneously in one process as described later. be able to.

In manufacturing the above-mentioned element substrate,
For example, as shown in FIG. 28, a highly conductive metal thin film made of aluminum or the like constituting the highly conductive metal layer 4 and the pixel electrode 3 is formed on the substrate 1 by sputtering or the like, and this is subjected to a predetermined process by photoetching or the like. The highly conductive metal layer 4 and the pixel electrode 3 are formed by patterning into a shape. The first conductor 1 is formed on the highly conductive metal layer 4 in the same manner as in the first conventional example.
The first conductor 11 is formed as shown in FIG. 29 by forming a film of tantalum or the like constituting the film 1 and forming the film into a predetermined planar shape by photoetching. Thereafter, the nonlinear electric conductor layer 12 and the second conductor 13 may be formed in the same manner as in the first conventional example.

FIG. 30 is a longitudinal sectional view of an embodiment in which a liquid crystal display device as an electro-optical device is constituted by using the above-mentioned element substrate. In the drawing, reference numeral 1 denotes an element substrate configured as shown in FIGS. 26 and 27, reference numeral 51 denotes an opposing substrate disposed so as to oppose the element substrate 1, and an opposing electrode 52 is provided on the inner surface thereof. The liquid crystal layer 53 is interposed between 51.

As described above, the element substrate 1 is provided with the highly conductive metal layer 4 along the signal input wiring 2, thereby reducing the wiring resistance. In addition to the provision of the metal layer 4 on the surface of the pixel electrode 3, an electro-optical device such as a reflective liquid crystal display device can be configured without providing a separate reflector or the like. In particular, the present invention is effective for an electro-optical device such as a liquid crystal display device of a type in which a liquid crystal of a polymer dispersion type liquid crystal or a guest host mode is used as the liquid crystal layer 53 and a display does not require a polarizing plate.

On the back side of the electro-optical device, that is, on the lower side of the element substrate 1 in the drawing, as shown in FIG. 30, a reflecting plate 6 such as a mirror or a light scattering plate or a light shielding plate is provided as necessary. By doing so, it is possible to prevent light from leaking to the rear side from the gap between the adjacent pixel electrodes, or to prevent unnecessary light from entering from the rear side to lower the display performance and the like.

[Embodiment 7] The embodiment 6 is a modification of the conventional example 1.
As described above, the case where a single ordinary MIM element S is used as the nonlinear element has been described as an example. However, the element using the single lateral type MIM element S as the nonlinear element as in the conventional example 2 or As in the above-mentioned conventional example 3, the back-to-back type ordinary MIM element S1
In the device using S2 or the device using lateral MIM devices S1 and S2 in the back-to-back method as the nonlinear device as in the above-described conventional example 4, the longitudinal length of the wiring 2 is the same as in the sixth embodiment. The highly conductive metal layer 4 is formed along the direction, and the pixel electrode 3 is
It can also be formed of the same material or a different material metal.

In manufacturing the element substrate as described above, a highly conductive metal layer 4 and a pixel electrode 3 are formed on the substrate 1 in the same manner as in the sixth embodiment. First conductor 11, nonlinear electric conductor layer 12, second conductor 13 in the same manner as in Example 3 or Conventional Example 4.
May be formed. Further, an electro-optical device such as a liquid crystal display device as shown in FIG. 20 can be formed using the element substrate configured as described above in the same manner as in the sixth embodiment. Thus, a reflection-type device with less noise is obtained.

[Embodiment 8] The two lateral elements S1 and S1 of the back-to-back system in the embodiment 5 are used.
2 can be configured in the same manner as in the above-described sixth embodiment also in the case where 2 is provided on the side surface of the wiring 2 and on one side surface of the conductor 11 between the wiring 2 and the pixel electrode 3.

FIG. 31 is a plan view of an element substrate showing an example thereof, and FIG. 32 is an enlarged sectional view of an element portion taken along line AA in FIG. Along with forming a highly conductive metal layer 4 made of aluminum or the like, the pixel electrode 3 is formed of a metal of the same material as the highly conductive metal layer 4. However, it can be formed of a different material metal.

When the pixel electrode 3 is formed of metal as described above, the pixel electrode 3 can be used as a reflection layer as in the sixth embodiment. If the highly conductive metal layer 4 of the wiring 2 and the metal layer 4 of the pixel electrode 3 are made of the same material, they can be easily formed simultaneously by one process as described later.

Further, as in the above embodiment, two elements S1
In the fourth embodiment, when S2 is provided on the side surface of the wiring 2 and one side surface of the conductor 11 between the wiring 2 and the pixel electrode 3, and the pixel electrode 3 made of metal is provided on the substrate 1.
A contact hole for conductively connecting the conductor 11 and the conductor 13 of the wiring 2 as described in
In order to electrically connect the conductor 11 and the pixel electrode 3 between the wiring 2 and the pixel electrode 3 as in the above, there is an advantage that there is no trouble to peel off a part of the nonlinear electric conductor 12 on the conductor 11. is there.

In manufacturing the above-mentioned element substrate,
For example, it can be manufactured in the following manner. 33 to 38 show an example of the manufacturing process, in which (a) is a plan view and (b) is a cross-sectional view of the element portion along a broken line in (a).

(1) First, a highly conductive metal film made of aluminum or the like constituting the highly conductive metal layer 4 is formed on the surface of the substrate 1 by sputtering or the like, and the metal film is formed into a predetermined shape by photo etching or the like. Then, as shown in FIG. 33, a highly conductive metal layer 4 along the wiring 2 and a pixel electrode 3 made of a metal of the same material are formed as shown in FIG. (2) Next, a conductive film such as tantalum constituting the conductor 11 is formed thereon, and the conductive film is patterned into a predetermined planar shape by photoetching to form a part of the MIM element as shown in FIG. Constituent conductor 11 and wiring 2
And the conductor 11 which constitutes a part of the conductor 11 are formed. (3) The conductor 11 is anodized or thermally oxidized to form an insulating layer 12 'of tantalum oxide or the like on the surface as shown in FIG. (4) Next, the insulating layer 12 'on the side surface of the conductor 11 is removed by photoetching or the like to leave the insulating layer 12' on the upper surface of the conductor 11 as shown in FIG. (5) The above-mentioned conductor 11 is again subjected to anodic oxidation or thermal oxidation to form a non-linear electric conductor 12 on the side surface as shown in FIG. (6) Then, as shown in FIG. 38, the conductor 11 and the insulating layer 12 'and the non-linear electric conductor 12 between the part constituting the element and the wiring 2 are cut off by photoetching or the like, and the second conductive material is removed. A second conductive body 13 may be formed by forming a conductive film of chrome or the like constituting the body 13 and forming the conductive film into a predetermined planar shape by photoetching or the like.

In the above manufacturing processes (3) and (5), when the conductor 11 is anodized to form the insulating layer 12 ′ and the nonlinear electric conductor 12, the pixel electrode 3 made of aluminum or the like is exposed. The portion is oxidized to form an oxide film such as alumina on the surface. However, there is almost no problem in using the pixel electrode 3 as a reflection layer. Rather, the oxide film serves as a protective film to form a liquid crystal display device. When used in the electro-optical device described above, there are advantages that a short circuit with the counter electrode can be prevented, and that redundancy against defects due to film residue or the like can be increased. The same applies to the case where the lateral type MIM element is formed by anodic oxidation in the seventh embodiment.

When the above-mentioned oxide film is unnecessary,
It is also possible to selectively remove all or a part of it. For example, in the case of alumina, phosphoric acid-chromic acid (AR
S2341) or the like can be easily removed.

Although not shown in the figure in this example, the electro-optical device such as a liquid crystal display device similar to that shown in FIG. 30 can be formed by using the above-mentioned element substrate. The effect of is obtained.

[Embodiment 9] FIG. 39 is a plan view of an element substrate showing another embodiment in which a highly conductive metal layer is provided along a wiring and a pixel electrode has a reflection function, and FIG. It is an expanded sectional view of an element section which meets an AA line.

In this embodiment, normal MIM elements S1 and S2 of the back-to-back system are provided between the wiring 2 and the pixel electrode 3 as nonlinear elements, and both elements S1 and S2 are made of a conductor made of tantalum or the like. 11 and a non-linear electric conductor 12 made of tantalum oxide or the like and a conductor 13 made of chromium or the like
In addition, the wiring 2 and the pixel electrode 3 are composed of a conductor made of chromium or the like of the same material as the second conductor 13 constituting the elements S1 and S2 and a highly conductive metal layer 4 of aluminum or the like. It is composed.

When the wiring 2 is composed of the highly conductive metal layer 4 as described above, the wiring resistance can be reduced and the pixel electrode 3
When the surface of is formed of the metal layer 4 as described above, the pixel electrode 3 can be used as a reflective layer.

The highly conductive metal layer 4 on the wiring 2 and the metal layer 4 of the pixel electrode 3 do not necessarily have to be made of the same material. It can be easily formed simultaneously with the process. In addition, the conductor 2 made of chromium or the like is omitted, the wiring 2 and the pixel electrode 3 are formed only of the highly conductive metal layer 4 made of aluminum or the like, and the elements S1 and S2 are formed with the conductor 11 made of tantalum or the like. It can also be composed of the nonlinear electric conductor 12 made of tantalum oxide or the like and the metal layer 4. Further, for example, an alloy of nickel and gold may be formed on the conductor 13 made of chromium or the like instead of aluminum.

In manufacturing the element substrate as described above, it can be manufactured, for example, in the following manner. FIG.
1 to 43 show an example of the manufacturing process, in which (a) is a plan view, and (b) is a cross-sectional view of the element portion along a broken line in (a).

(1) First, a conductive film such as tantalum constituting the conductor 11 is formed on the substrate 1, and the conductive film is formed into a predetermined planar shape by photoetching to form an MIM element as shown in FIG. Is formed. (2) The conductor 11 is thermally oxidized, for example, to form a non-linear electric conductor layer 12 such as tantalum oxide on the surface as shown in FIG. (3) Next, a conductive film such as chromium constituting the second conductor 13 and a high conductive metal layer 4 such as aluminum are formed by sputtering or the like, and the conductive film and the high conductive metal layer 4 are formed. The second conductor 13 forming the elements S1 and S2, the wiring 2 and the pixel electrode 3 may be formed by patterning into a predetermined planar shape by photo etching or the like as shown in FIG.

When the conductor 13 made of chromium or the like is omitted as described above, the formation of the metal film made of chromium or the like is omitted and the substrate 1 including the nonlinear electric conductor 12 is omitted.
A metal film such as aluminum may be directly formed on the upper surface of the substrate and patterned at the same time into a predetermined shape by photo etching or the like.

As described above, instead of aluminum, an alloy of nickel and gold is used instead of the second
When it is formed on the conductor 13 described above, it can also be formed by a plating method or the like.

An electro-optical device such as a liquid crystal display device similar to that shown in FIG. 30 can be formed by using the element substrate configured as described above, and the same effects can be obtained.

[Embodiment 10] FIG. 44 is a plan view of an element substrate showing still another embodiment in which a highly conductive metal layer is provided along a wiring and a pixel electrode has a reflection function, and FIG. 45 is FIG. FIG. 4 is an enlarged cross-sectional view of the element section taken along line AA in FIG.

In this embodiment, back-to-back lateral MIM elements S1 and S2 are provided between the wiring 2 and the pixel electrode 3 as nonlinear elements.
Is composed of a conductor 11 made of tantalum or the like, a non-linear electric conductor 12 made of tantalum oxide or the like, and a conductor 13 made of chromium or the like, and the wiring 2 and the pixel electrode 3 constitute the elements S1 and S2. 2 and a conductor 13 made of chromium or the like of the same material and a highly conductive metal layer 4 made of aluminum or the like.

When the wiring 2 is formed of the highly conductive metal layer 4 as described above, the wiring resistance can be reduced as in the ninth embodiment, and the surface of the pixel electrode 3 is formed of the metal layer 4 as described above. The pixel electrode 3 can be used as a reflection layer.

The highly conductive metal layer 4 on the wiring 2 and the metal layer 4 of the pixel electrode 3 are not necessarily made of the same material, and the conductor 13 made of chromium or the like may be omitted. The material other than aluminum may be used for the highly conductive metal layer 4 as in the case of the above embodiment.

In manufacturing the element substrate as described above, it can be manufactured, for example, in the following manner. FIG.
6 to 49 show an example of the manufacturing process, in which (a) is a plan view and (b) is a cross-sectional view of the element portion along the broken line in (a).

(1) First, a conductive film such as tantalum constituting the conductor 11 is formed on the substrate 1, and the conductive film is formed into a predetermined planar shape by photoetching to form an MIM element as shown in FIG. Is formed. (2) The conductor 11 is thermally oxidized, for example, to form an insulating layer 12 'on the front surface thereof, and the insulating layer 12' on the side surface of the conductor 11 is removed by photoetching or the like, as shown in FIG. An insulating layer 12 ′ made of tantalum oxide or the like is formed on the conductor 11. Alternatively, an insulating film 12 ′ such as a polyimide film is formed on the conductor 11. (3) Next, the conductor 11 is thermally oxidized to form a non-linear electric conductor layer 12 on the side surface as shown in FIG. (4) Finally, a conductive film such as chromium constituting the second conductor 13 and a highly conductive metal layer 4 such as aluminum are formed by sputtering or the like, and the conductive film and the highly conductive metal layer 4 are formed. Are patterned into a predetermined planar shape by photo-etching or the like, and as shown in FIG.
2, the wiring 2, and the pixel electrode 3 may be formed.

When the conductor 13 made of chromium or the like is omitted as described above, the above-described nonlinear electric conductor 12 is used.
A metal film such as aluminum may be directly formed on the upper surface of the substrate 1 including silicon and patterned at the same time into a predetermined shape by photoetching or the like, and an alloy of nickel and gold may be used instead of aluminum as described above. When formed on the second conductor 13 made of chromium or the like,
It can be formed by a plating method or the like as in the case of the above example.

In this embodiment, an electro-optical device such as a liquid crystal display device similar to that shown in FIG. 30 can be formed by using the element substrate configured as described above, and the same effects can be obtained.

[Embodiment 11] FIG. 50 is a plan view of an element substrate showing still another embodiment in which a highly conductive metal layer is provided along the wiring and the pixel electrode has a reflection function, and FIG. FIG. 4 is an enlarged cross-sectional view of the element section taken along line AA in FIG.

In this embodiment, the lateral type back-to-back type devices S1 and S2 and the wiring 2 are made of a first conductor 11 made of tantalum or the like and a tantalum oxide or the like, as in the fourth conventional example. The pixel electrode 3 is formed of a non-linear electric conductor 12 and a second conductor 13 made of chromium or the like, and the pixel electrode 3 is formed of a conductor 13 made of the same material as the second conductor, such as chromium. A highly conductive metal layer 4 made of aluminum or the like is provided on a conductor 13 such as aluminum.

Also in this embodiment, the wiring resistance can be reduced by providing the highly conductive metal layer 4 on the conductor 13 constituting the wiring 2 as described above, and the metal layer 4 is formed on the surface of the pixel electrode 3. With the provision, the pixel electrode 3 can be used as a reflection layer.

The highly conductive metal layer 4 on the wiring 2 and the metal layer 4 of the pixel electrode 3 are not necessarily the same, and the conductor 13 made of chromium or the like may be omitted. The material other than aluminum may be used for the highly conductive metal layer 4 as in the case of the above embodiment.

In manufacturing the above-described element substrate,
For example, it can be manufactured in the following manner. First, according to the manufacturing processes (1) to (5) in the conventional example 4, the conductors 11 forming the wiring 2 on the substrate 1 in the same manner.
And the nonlinear electric conductor 12 and the first electric conductor 11 and the non-linear electric conductor 12 constituting the elements S1 and S2, and the electric conduction between the part constituting the element and the wiring 2 as shown in FIG. The body 11, the insulator 12 'and the nonlinear electric conductor 12 are cut off.

Next, as shown in FIG. 53, a metal film such as chromium and a metal film such as aluminum constituting the conductor 13 are formed on the upper surface of the substrate 1 including the nonlinear electric conductor 12 by sputtering or the like. What is necessary is just to pattern into a predetermined shape by photoetching etc. At this time, when the metal film such as chromium and the metal film such as aluminum constituting the conductor 13 are formed in the same plane shape as shown in the illustrated example, they can be simultaneously patterned.

In the case where the conductor 13 made of chromium or the like is omitted as described above, the formation of the film made of chromium or the like is omitted, and aluminum is directly formed on the upper surface of the substrate 1 including the nonlinear electric conductor 12. May be formed and then patterned simultaneously into a predetermined shape by photoetching or the like. In the case where an alloy of nickel and gold is formed on the second conductor 13 made of chromium or the like instead of aluminum as described above, the alloy may be formed by a plating method or the like. Is the same as

FIG. 54 is a longitudinal sectional view of an embodiment in which a liquid crystal display device as an electro-optical device is constituted by using the above-mentioned element substrate. In the drawing, reference numeral 1 denotes an element substrate configured as shown in FIGS. 21 and 22; 51, a counter substrate disposed so as to face the element substrate 1; a counter electrode 52 is provided on the inner surface thereof; The liquid crystal layer 53 is interposed between 51.

The element substrate 1 is provided with the wiring 2 as described above.
A high conductive metal layer 4 along the pixel electrode 3
Is provided with a metal layer 4 on the surface of the pixel. By providing the highly conductive metal layer 4 along the wiring 2, the wiring resistance is reduced, and a good display can be obtained at a low voltage. By providing the metal layer 4 on the surface of the electrode 3, an electro-optical device such as a reflective liquid crystal display device can be configured without providing a separate reflector or the like. In particular, the present invention is effective for an electro-optical device such as a liquid crystal display device of a type in which a liquid crystal of a polymer dispersion type liquid crystal or a guest host mode is used as the liquid crystal layer 53 and a display does not require a polarizing plate. In addition, a reflection plate or the like can be provided on the back side of the substrate 1 as necessary, similarly to FIG.

[Embodiment 12] FIG. 55 is a plan view of an element substrate showing still another embodiment in which a highly conductive metal layer is provided along a wiring and a pixel electrode has a reflection function, and FIG. 56 is FIG. FIG. 4 is an enlarged cross-sectional view of the element section taken along line AA in FIG.

This embodiment is different from the device S1 in the conventional example 4 described above.
Using a highly conductive metal 4 made of aluminum or the like as the second conductor constituting the S2 and the wiring 2, forming the pixel electrode 3 with the same highly conductive metal 4 as described above, and
The transparent conductive layer 5 made of ITO or the like is provided on the high conductive metal layer 4. Fine irregularities may be formed on the surface of the conductor layer 5 as necessary. The other configuration is the same as that of the fourth conventional example.

The above-mentioned highly conductive metal 4 may be either aluminum alone or an aluminum alloy, or may be copper alone or a copper alloy, or another metal. Further, the transparent conductor layer 5 is not limited to ITO, and another transparent or translucent conductor may be used.

In manufacturing the above-mentioned element substrate,
For example, it can be manufactured in the following manner. First, the conductor 11, the insulator 12 ′, and the non-linear electric conductor 12 are formed on the substrate 1 in the same manner according to the manufacturing processes (1) to (5) in the conventional example 4 and FIG.
As shown in (1), the conductor 11, the insulator 12 ', and the non-linear electric conductor 12 between the part constituting the element and the wiring 2 are cut off.

Next, a film made of chromium or the like constituting the second conductor 13 is formed on the upper surface of the substrate 1 including the above-described nonlinear electric conductor 12 by sputtering or the like, and the film is formed by photo-etching or the like. Fig. 5
As shown in FIG. 8, the second
And the pixel electrode 3 made of the same material as the conductor 13 is formed. Then, a transparent conductive film made of ITO or the like is formed on the pixel electrode 3 by sputtering or the like, and is patterned into a predetermined shape by photoetching or the like as shown in FIG. Good.

In the case where fine irregularities are formed on the surface of the conductor layer 5 as described above, the sputtering conditions for forming the conductor layer 5 may be appropriately adjusted, or light may be applied after the sputtering. A surface treatment such as coaching may be performed. As the above sputtering conditions,
For example, the temperature may be lowered to increase the rate.

Although not shown in the drawings in this example, an electro-optical device such as a liquid crystal display device similar to that shown in FIG. 30 or FIG. 54 can be formed by using the above-mentioned element substrate, and the same effect can be obtained. Can be In particular, the reflection efficiency can be improved by providing the transparent conductor layer 5 on the surface of the pixel electrode 3 made of metal.

In this case, the film thickness of the transparent conductive layer 5 is set so that the reflectance can be maximized by the interference between the reflective surface on the surface of the pixel electrode 3 made of metal and the light from the transparent conductive layer 5. Preferably, for example, when ITO is used, the film thickness is preferably about 100 to 1500 angstroms.

It is also possible to control the color tone of the reflected light by utilizing the above-mentioned interference effect. For example, when ITO is used for the transparent conductor
The reflected light at 0 angstrom is light blue, 1000
At Angstroms, yellow reflected light is obtained at 1500 Angstroms, and brown reflected light is obtained at 1500 Angstroms.

By controlling the color tone of the reflected light as described above, visibility can be enhanced, and this is particularly effective for adjusting the color tone when combined with the liquid crystal in the guest-host mode.

[Embodiment 13] FIG. 60 is a plan view of an element substrate showing still another embodiment in which a highly conductive metal layer is provided along the wiring and the pixel electrode has a reflection function. FIG. FIG. 4 is an enlarged cross-sectional view of the element section taken along line AA in FIG.

In this embodiment, the second conductor 13 in the conventional example 4 is formed of a highly conductive metal such as aluminum, and the pixel electrode 3 is formed of tantalum of the same material as the first conductor 11. A fine concave portion G is formed on the surface of the pixel electrode 3 made of tantalum, and a metal layer 13 of the same material as that of the second conductor 13 is coated thereon. Same as 1.

Instead of using tantalum as the pixel electrode 3, another material such as a resin-based material or a metal material may be used. However, if the same material as the first conductor 11 is used as in the present embodiment, , Can be easily formed at the same time when the first conductor 11 is formed.

In manufacturing the above-described element substrate,
For example, it can be manufactured in the following manner. 62 to 67 show an example of the manufacturing process, in which (a) is a plan view and (b) is a cross-sectional view of the element portion along the broken line in (a). (1) First, a conductive film such as tantalum is formed on the substrate 1,
The conductive film is patterned into a predetermined planar shape by photoetching to form a conductor 11 forming an element and a wiring and a conductor 11 forming a pixel electrode 3 as shown in FIG. A concave portion G is formed on the surface of the conductor 11 to be formed by photoetching or the like. (2) The conductors 11 in the element portion and the wiring portion except for the conductor 11 constituting the pixel electrode 3 are anodized or thermally oxidized, and an insulating layer 12 ′ such as tantalum oxide is formed on the surface thereof as shown in FIG. To form (3) The insulating layer 12 'on the side surface of the conductor 11 is removed by photoetching or the like to leave the insulating layer 12' only on the upper surface of the conductor 11, as shown in FIG. (4) The conductor 11 is again anodized or thermally oxidized to form a non-linear electric conductor 1 on its side as shown in FIG.
Form 2 (5) Next, as shown in FIG. 66, the conductor 11 and the non-linear electric conductor 12 between the part constituting the element and the wiring 2
Are removed by photoetching or the like. (6) Finally, a conductive film made of aluminum or the like constituting the second conductor 13 is formed, and the conductive film is formed into a predetermined planar shape by photoetching or the like, and as shown in FIG. In addition to forming the second conductor 13, the conductor 13 may be formed on the surface of the pixel electrode 3 made of tantalum or the like.

Although not shown in the drawings in this example, an electro-optical device such as a liquid crystal display device similar to that shown in FIG. 30 or FIG. 54 can be formed by using the above-mentioned element substrate, and the same effect can be obtained. Can be In particular, the surface of the pixel electrode 3 shown in FIG.
As shown in FIG. 61 and by forming the fine concave portion G, the reflected light is scattered and the reflection efficiency can be increased.

The width w of the recess G is preferably about 0.5 to 50 μm in consideration of the manufacturing process and the scattering effect, and the depth d is preferably about 0.1 to 2 μm. Further, in order to enhance the scattering effect, it is preferable that the concave portion G has a shape as smooth as possible. In addition, when an electro-optical device such as a liquid crystal display device is configured, it is desirable that the pattern of the concave portion G has a random shape as much as possible so that specific interference fringes do not appear.

[0121]

As described above, the element substrate according to the present invention, the method for manufacturing the same, and the electro-optical device using the element substrate are provided on the substrate 1 with the first conductor 11, the non-linear electric conductor 12, and the second And the non-linear elements S1 and S2 whose overlapping portions have non-linear current-voltage characteristics are provided between the signal input wiring 2 and the pixel electrode 3. The nonlinear element S1
Since the first or second conductor constituting S2, the signal input wiring 2 and the pixel electrode 3 are formed of the same conductive metal layer of the same material, the wiring resistance can be reduced, It is possible to prevent the image quality from deteriorating due to crosstalk and the like as in the above-described conventional case, and to increase the aperture ratio even when the precision is increased. In addition, since the driving voltage can be reduced, there is an effect that an electro-optical device such as a liquid crystal display device having good display characteristics at a low voltage can be provided.

[Brief description of the drawings]

FIG. 1 is a plan view of an element substrate showing one embodiment of the present invention.

FIG. 2 is an enlarged sectional view taken along line AA in FIG.

FIG. 3 is a process explanatory view showing an example of a manufacturing process of an element substrate in the embodiment.

FIG. 4 is a process explanatory view showing an example of a manufacturing process of the element substrate in the embodiment.

FIG. 5 is a longitudinal sectional view of an electro-optical device using the element substrate in the embodiment.

FIG. 6 is a plan view of an element substrate according to another embodiment of the present invention.

FIG. 7 is an enlarged sectional view taken along the line AA in FIG. 6;

FIG. 8 is a plan view of an element substrate showing still another embodiment according to the present invention.

FIG. 9 is an enlarged sectional view taken along line AA in FIG. 8;

FIG. 10 is a plan view of an element substrate showing still another embodiment according to the present invention.

FIG. 11 is an enlarged sectional view taken along line AA in FIG. 10;

FIG. 12 is a process explanatory view showing an example of a manufacturing process of the element substrate in the embodiment.

FIG. 13 is a process explanatory view showing an example of the manufacturing process of the element substrate in the above embodiment.

FIG. 14 is a process explanatory view showing an example of the manufacturing process of the element substrate in the above embodiment.

FIG. 15 is a process explanatory view showing an example of the manufacturing process of the element substrate in the above embodiment.

FIG. 16 is an explanatory process diagram showing an example of the manufacturing process of the element substrate in the embodiment.

FIG. 17 is a process explanatory view showing an example of the manufacturing process of the element substrate in the above embodiment.

FIG. 18 is a process explanatory view showing an example of the manufacturing process of the element substrate in the above embodiment.

FIG. 19 is a process explanatory view showing an example of the manufacturing process of the element substrate in the above embodiment.

FIG. 20 is a longitudinal sectional view of an electro-optical device using the element substrate in the embodiment.

FIG. 21 is a plan view of an element substrate showing still another embodiment according to the present invention.

FIG. 22 is an enlarged sectional view taken along line AA in FIG. 21;

FIG. 23 is an explanatory process diagram showing an example of the manufacturing process of the element substrate in the above embodiment.

FIG. 24 is an explanatory process diagram showing an example of the manufacturing process of the element substrate in the above embodiment.

FIG. 25 is an explanatory process diagram showing an example of the manufacturing process of the element substrate in the embodiment.

FIG. 26 is a plan view of an element substrate showing still another embodiment according to the present invention.

FIG. 27 is an enlarged sectional view taken along line AA in FIG. 26;

FIG. 28 is a process explanatory view showing an example of the manufacturing process of the element substrate in the above embodiment.

FIG. 29 is an explanatory process diagram showing an example of the manufacturing process of the element substrate in the above embodiment.

FIG. 30 is a longitudinal sectional view of an electro-optical device using the element substrate in the above embodiment.

FIG. 31 is a plan view of an element substrate showing still another embodiment according to the present invention.

FIG. 32 is an enlarged sectional view taken along line AA in FIG. 31;

FIG. 33 is an explanatory process diagram showing an example of the manufacturing process of the element substrate in the embodiment.

FIG. 34 is an explanatory process diagram showing an example of the manufacturing process of the element substrate in the embodiment.

FIG. 35 is an explanatory process diagram showing an example of the manufacturing process of the element substrate in the example.

FIG. 36 is an explanatory process diagram showing an example of the manufacturing process of the element substrate in the above embodiment.

FIG. 37 is an explanatory process diagram showing an example of the manufacturing process of the element substrate in the above embodiment.

FIG. 38 is an explanatory process diagram showing an example of the manufacturing process of the element substrate in the above embodiment.

FIG. 39 is a plan view of an element substrate showing still another embodiment according to the present invention.

40 is an enlarged cross-sectional view taken along line AA in FIG. 39.

FIG. 41 is a process explanatory view showing an example of the manufacturing process of the element substrate in the above embodiment.

FIG. 42 is an explanatory process diagram showing an example of the manufacturing process of the element substrate in the embodiment.

FIG. 43 is a process explanatory view showing an example of the manufacturing process of the element substrate in the above embodiment.

FIG. 44 is a plan view of an element substrate showing still another embodiment according to the present invention.

FIG. 45 is an enlarged sectional view taken along line AA in FIG. 44;

FIG. 46 is an explanatory process diagram showing an example of the manufacturing process of the element substrate in the above embodiment.

FIG. 47 is a process explanatory view showing an example of the manufacturing process of the element substrate in the above embodiment.

FIG. 48 is an explanatory process diagram showing an example of the manufacturing process of the element substrate in the embodiment.

FIG. 49 is an explanatory process diagram showing an example of the manufacturing process of the element substrate in the example.

FIG. 50 is a plan view of an element substrate showing still another embodiment according to the present invention.

FIG. 51 is an enlarged sectional view taken along line AA in FIG. 50;

FIG. 52 is an explanatory process diagram showing an example of the manufacturing process of the element substrate in the embodiment.

FIG. 53 is an explanatory process diagram showing an example of the manufacturing process of the element substrate in the example.

FIG. 54 is a longitudinal sectional view of an electro-optical device using the element substrate in the above embodiment.

FIG. 55 is a plan view of an element substrate showing still another embodiment according to the present invention.

FIG. 56 is an enlarged sectional view taken along line AA in FIG. 55;

FIG. 57 is an explanatory process diagram showing an example of the manufacturing process of the element substrate in the embodiment.

FIG. 58 is a process explanatory view showing an example of the manufacturing process of the element substrate in the example.

FIG. 59 is a process explanatory view showing an example of the manufacturing process of the element substrate in the example.

FIG. 60 is a plan view of an element substrate showing still another embodiment according to the present invention.

FIG. 61 is an enlarged sectional view taken along line AA in FIG. 60;

FIG. 62 is an explanatory process diagram showing an example of the manufacturing process of the element substrate in the above embodiment.

FIG. 63 is an explanatory process diagram showing an example of the manufacturing process of the element substrate in the embodiment.

FIG. 64 is an explanatory process diagram showing an example of the manufacturing process of the element substrate in the above embodiment.

FIG. 65 is an explanatory process diagram showing an example of the manufacturing process of the element substrate in the above embodiment.

FIG. 66 is an explanatory process diagram showing an example of the manufacturing process of the element substrate in the example.

FIG. 67 is an explanatory process diagram showing an example of the manufacturing process of the element substrate in the example.

FIG. 68 is a plan view of an element substrate showing still another embodiment according to the present invention.

69 is an enlarged sectional view taken along line AA in FIG. 68.

FIG. 70 is an explanatory process diagram showing an example of the manufacturing process of the element substrate in the example.

FIG. 71 is a process explanatory view showing an example of the manufacturing process of the element substrate in the example.

FIG. 72 is a process explanatory view showing an example of the manufacturing process of the element substrate in the example.

FIG. 73 is a process explanatory view showing an example of the manufacturing process of the element substrate in the example.

FIG. 74 is a plan view showing an example of a conventional element substrate.

75 is an enlarged sectional view taken along line AA in FIG. 74.

FIG. 76 is an explanatory process diagram showing an example of the manufacturing process of the element substrate in the conventional example.

FIG. 77 is an explanatory process diagram showing an example of the manufacturing process of the element substrate in the conventional example.

FIG. 78 is a process explanatory view showing an example of the manufacturing process of the element substrate in the conventional example.

FIG. 79 is a process explanatory view showing an example of the manufacturing process of the element substrate in the conventional example.

FIG. 80 is a process explanatory view showing an example of a manufacturing process of the element substrate in the conventional example.

FIG. 81 is a process explanatory view showing an example of the manufacturing process of the element substrate in the conventional example.

FIG. 82 is an explanatory process diagram showing another example of the manufacturing process of the element substrate in the conventional example.

FIG. 83 is a process explanatory view showing another example of the manufacturing process of the element substrate in the conventional example.

FIG. 84 is a process explanatory view showing another example of the manufacturing process of the element substrate in the conventional example.

FIG. 85 is a plan view showing another example of a conventional element substrate.

86 is an enlarged sectional view taken along line AA in FIG. 85.

FIG. 87 is an explanatory process diagram showing an example of the manufacturing process of the element substrate in the conventional example.

FIG. 88 is an explanatory process diagram showing an example of the manufacturing process of the element substrate in the conventional example.

FIG. 89 is a process explanatory view showing an example of the manufacturing process of the element substrate in the conventional example.

FIG. 90 is a process explanatory view showing an example of the manufacturing process of the element substrate in the conventional example.

FIG. 91 is an explanatory process diagram showing an example of the manufacturing process of the element substrate in the conventional example.

FIG. 92 is an explanatory process diagram showing an example of the manufacturing process of the element substrate in the conventional example.

FIG. 93 is a plan view showing still another example of the conventional element substrate.

94 is an enlarged cross-sectional view taken along line AA in FIG. 93.

FIG. 95 is a process explanatory view showing an example of a manufacturing process of the element substrate in the conventional example.

FIG. 96 is an explanatory process diagram showing an example of the manufacturing process of the element substrate in the conventional example.

FIG. 97 is an explanatory process diagram showing an example of the manufacturing process of the element substrate in the conventional example.

FIG. 98 is a process explanatory view showing an example of the manufacturing process of the element substrate in the conventional example.

FIG. 99 is an explanatory process diagram showing an example of the manufacturing process of the element substrate in the conventional example.

FIG. 100 is a process explanatory view showing an example of the manufacturing process of the element substrate in the conventional example.

FIG. 101 is a process explanatory view showing an example of the manufacturing process of the element substrate in the conventional example.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Substrate 2 Wiring 3 Pixel electrode 11, 13, 21, 23 Conductor 12, 22 Non-linear electric conductor 4 High conductive metal layer S, S1, S2 Non-linear element

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[Procedure amendment]

[Submission date] October 30, 2001 (2001.10.
30)

[Procedure amendment 1]

[Document name to be amended] Statement

[Correction target item name] Full text

[Correction method] Change

[Correction contents]

[Document Name] Statement

Patent application title: ELEMENT SUBSTRATE, ITS MANUFACTURING METHOD, AND ELECTRO-OPTICAL DEVICE

[Claims]

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an element substrate used for an electro-optical device such as a liquid crystal display device, and more particularly to an element substrate having a non-linear element, a method of manufacturing the same, and an electro-optical device using the element substrate.

[0002]

2. Description of the Related Art Conventionally, in a liquid crystal display device, for example, a large number of pixel electrodes are arranged in a matrix on one of a pair of substrates sandwiching a liquid crystal layer of a liquid crystal panel, and each of the pixel electrodes has a current-voltage characteristic. A device driven via a nonlinear element having nonlinearity is known.

[Conventional Example 1] FIG. 68 is a partial plan view showing an example of a conventional element substrate used for a liquid crystal display device as described above, and FIG. 69 is a view showing an element portion taken along line AA in FIG. It is an expanded sectional view. This example uses a normal MI as a nonlinear element.
Each pixel has one M element. In the drawing, reference numeral 1 denotes an insulating substrate made of a transparent glass plate or the like, 2 denotes a signal input wiring provided on the substrate 1 in a stripe shape, and 3 denotes a pixel electrode provided between adjacent wirings 2. is there.

The wiring 2 is composed of a first conductor 11 and a non-linear electric conductor 12, and a pixel is formed on a second conductor 13 provided so as to cover a part of the non-linear electric conductor 12. The electrode 3 is conductively connected. The first conductor 1
1 and the non-linear electric conductor 12 and the second electric conductor 13
The MIM (Metal Insulator Metal) element S as a non-linear element having non-linearity in current-voltage characteristics is provided so as to partially overlap each other.

Conventionally, tantalum (Ta) is often used as the material of the first conductor 11, tantalum oxide (TaOx) is used as the nonlinear electric conductor 12, and current is used as the second conductor 13. Chromium (Cr) and titanium (T
i) and the like are often used. As the pixel electrode 3, a transparent ITO or the like is often used.

In manufacturing the above-mentioned element substrate, conventionally, for example, it is manufactured in the following manner. Figure 70
73 to 73 show an example of the manufacturing process, in which (a) is a plan view and (b) is a cross-sectional view of the element portion along a broken line in (a).

(1) First, a conductive film such as tantalum constituting the conductor 11 is formed on the substrate 1, and the conductive film is formed into a predetermined planar shape by photo-etching or the like, and wiring is formed as shown in FIG. The conductor 11 constituting a part of the second conductor 2 is formed. (2) A non-linear electric conductor layer 12 of tantalum oxide or the like is formed on the surface of the two conductors 11 by anodic oxidation or the like as shown in FIG. (3) Next, a conductive film made of chromium or the like constituting the second conductor 13 is formed, and the conductive film is formed into a predetermined planar shape by photoetching or the like, and as shown in FIG. The body 13 is formed. (4) Next, a film of ITO or the like constituting the pixel electrode is formed, and the film is patterned into a predetermined shape to form the pixel electrode 3 as shown in FIG.

[Conventional Example 2] FIG. 74 is a plan view of a part of an element substrate showing another conventional example, and FIG. 75 is an AA in FIG.
It is an expanded sectional view of an element part which follows a line. Members having the same functions as those of the first conventional example will be described with the same reference numerals.

In this embodiment, a so-called lateral type MIM element using one side surface of a first conductor as an element is provided for each pixel, and in the case of FIG.
An M element S is provided.

The wiring 2 is composed of a first conductor 11 and a non-linear electric conductor 12 in the same manner as in the prior art 1, and a second electric conductor provided so as to cover a part of the non-linear electric conductor 12. The pixel electrode 3 is conductively connected to the body 13. Then, the non-linear electric conductor 12 on the upper surface of the first conductor 11 is formed thick to form an insulating layer (barrier layer) 12 ′, and the first electric conductor 11 and the non-linear electric conductor 12 and the second
The portion where the conductor 13 overlaps is the MIM element S. The material of each of the above members is the same as that of the first conventional example.

In manufacturing the above-mentioned element substrate, conventionally, for example, it is manufactured in the following manner. FIG.
81 to 81 show an example of the manufacturing process, in which (a) is a plan view and (b) is a cross-sectional view of the element portion along a broken line in (a).

(1) First, a conductive film such as tantalum constituting the conductor 11 is formed on the substrate 1, and the conductive film is formed into a predetermined planar shape by photo-etching or the like, and wiring is formed as shown in FIG. The conductor 11 constituting a part of the second conductor 2 is formed. (2) An insulating layer 12 'made of tantalum oxide or the like is formed on the surfaces of both conductors 11 by anodic oxidation or thermal oxidation as shown in FIG. 77. (3) The insulating layer 12 'on the side surface of the conductor 11 is removed by photoetching or the like to leave the insulating layer 12' only on the upper surface of the conductor 11, as shown in FIG. (4) The above-mentioned conductor 11 is again anodized or thermally oxidized to form a non-linear electric conductor 12 on the side surface as shown in FIG. (5) Next, a conductive film made of chromium or the like constituting the second conductor 13 is formed, and the conductive film is formed into a predetermined planar shape by photoetching or the like, and as shown in FIG. The body 13 is formed. (6) Next, a film of ITO or the like constituting the pixel electrode is formed, and the film is patterned into a predetermined shape to form the pixel electrode 3 as shown in FIG.

Alternatively, as shown in FIG. 82, after forming a conductor 11 constituting a part of the wiring 2 on the substrate 1 in the same manner as in the above (1), a polyimide film or the like is formed on the conductor 11. By forming an insulating film, an insulating layer 12 'is formed as shown in FIG. 83, and then the conductor 11 is anodized or thermally oxidized to form a non-linear electric conduction on the side surface of the conductor 11 as shown in FIG. The body layer 12 is formed. Thereafter, the second conductor 13 and the pixel electrode 3 are formed in the same manner as in the above (5) and (6), thereby forming an element substrate having a lateral MIM element as shown in FIGS. 74 and 75. Has been manufactured.

[Conventional Example 3] FIG. 85 is a plan view of a part of an element substrate showing still another conventional example, and FIG.
It is an expanded sectional view of an element part which meets an A line.

In the present embodiment, between the wiring 2 and each pixel electrode 3, 2
The two ordinary MIM elements S1 and S2 are provided in series in a so-called back-to-back system, and a signal from the wiring 2 receives a first conductor 11, a non-linear electric conductor 12, and a second The element S is transmitted in the order of the conductor 13 and
2, the second conductor 13 and the nonlinear electric conductor 12
-It is transmitted in the order of the first conductor 11. Then, the configuration is such that the pixel electrode 3 is input from the first conductor 11 of the element S2.

In the present embodiment, the wiring 2 is composed of a first conductor 11 and a non-linear electric conductor 12, and the wiring 2 and the conductors 11 forming the elements S1 and S2 are formed.
The materials used for the material 13, the nonlinear electric conductor 12, and the pixel electrode 3 are the same as those used in the first conventional example.

In manufacturing the element substrate as described above, conventionally, for example, it is manufactured in the following manner. Fig. 87
92 show an example of the manufacturing process, in which (a) is a plan view and (b) is a cross-sectional view of the element portion along the broken line in (a).

(1) First, a conductive film such as tantalum constituting the conductor 11 is formed on the substrate 1, and the conductive film is formed into a predetermined planar shape by photo-etching to form the MIM element S1 as shown in FIG. Forming the first conductor 11 that forms part of S2 and the wiring 2; (2) Both the conductors 11 are anodized, and a non-linear electric conductor 1 such as tantalum oxide is formed on the surface thereof as shown in FIG.
Form 2 (3) Next, as shown in FIG. 89, two elements S1 and S2
And the non-linear electric conductor between them are cut off by photoetching or the like. (4) In order to make conductive connection with a pixel electrode to be described later, as shown in FIG. 90, a part of the nonlinear electric conductor 12 on one element S2 side is peeled off by etching or the like to expose the first conductor 11. Let it. (5) Next, a conductive film of chromium or the like constituting the second conductor 13 is formed, and the conductive film is formed into a predetermined planar shape by photoetching or the like, and as shown in FIG. To form (6) Then, ITO or the like that constitutes the pixel electrode is coated with a film,
The film is patterned into a predetermined shape to form the pixel electrode 3 as shown in FIG.

[Conventional Example 4] FIG. 93 is a plan view of an element substrate showing still another conventional example, and FIG. 94 is an enlarged sectional view of the element portion taken along line AA in FIG. In this example, two lateral MIM elements S1 are provided between the wiring 2 and each pixel electrode 3.
S2 is provided in series in a back-to-back system, and each of the MIM elements S1 and S2 is provided on the left and right side surfaces of the first conductor 11 formed between the wiring 2 and each pixel electrode 3. Have been.

The wiring 2 is a first conductor 11 in this embodiment.
And a non-linear electric conductor 12 and a second conductor 13, and a signal is mainly transmitted through the second conductor 13. In the element S1, a signal from the wiring 2 is transmitted from the second conductor 13 of the wiring 2 to the first conductor 11 between the wiring 2 and each pixel electrode 3 via the non-linear electric conductor 12. In the element S2, the light is transmitted from the first conductor 11 to the first conductor 11 between the pixel electrode 3 via the non-linear electric conductor 12. Then, the above signal is input to the pixel electrode 3 from the first conductor 11 of the element S2. The material of each component described above is the same as in the above-described example.

In manufacturing the element substrate as described above, conventionally, for example, it is manufactured in the following manner. FIG. 95
101 to 101 show an example of the manufacturing process, in which (a) is a plan view and (b) is a cross-sectional view of the element portion along the broken line in (a).

(1) First, a conductive film such as tantalum forming the conductor 11 is formed on the substrate 1, and the conductive film is formed into a predetermined planar shape by photoetching or the like, and the MIM is formed as shown in FIG. The conductors 11 forming a part of the elements S1 and S2 and the wiring 2 are formed. (2) An insulating layer 12 'of tantalum oxide or the like is formed on the surfaces of the conductors 11 by anodic oxidation or thermal oxidation as shown in FIG. 96. (3) The insulating layer 12 'on the side surface of the conductor 11 is removed by photoetching or the like to leave the insulating layer 12' only on the upper surface of the conductor 11, as shown in FIG. (4) The conductor 11 is again subjected to anodic oxidation or thermal oxidation to form a non-linear electric conductor 12 on the side surface as shown in FIG. (5) Next, as shown in FIG. 99, the conductor 11 and the insulating layer and the non-linear electric conductor 12 between the part constituting the element and the part constituting the wiring 2 are removed by photoetching or the like. (6) Then, a conductive film such as chromium constituting the second conductor 13 is formed, and the conductive film is formed into a predetermined planar shape by photoetching or the like, and as shown in FIG. To form (7) Next, a film of ITO or the like constituting the pixel electrode is formed, and the film is patterned into a predetermined shape to form the pixel electrode 3 as shown in FIG.

[0023]

However, when the signal input wiring is formed of a conductor such as tantalum and anodized tantalum oxide as described above, the wiring resistance is relatively large, and particularly large. At the time of screen conversion, image quality is significantly deteriorated due to crosstalk and the like. There were also problems such as an increase in drive voltage.

The present invention has been proposed in view of the above problems, and has a low wiring resistance, a low occurrence of crosstalk, etc., and can be driven at a low voltage, and an electro-optical device using the same. An object of the present invention is to provide a device and a method for manufacturing an element substrate capable of easily and inexpensively manufacturing such an element substrate.

[0025]

In order to achieve the above object, an element substrate, a method of manufacturing the same, and an electro-optical device according to the present invention have the following configurations.

That is, the element substrate according to the present invention is formed by sequentially laminating a first conductor, a non-linear electric conductor, and a second conductor on a substrate, and the overlapping portion thereof is non-linear in current-voltage characteristics. In an element substrate in which a non-linear element having a property is provided between a signal input wiring and a pixel electrode, a second conductor constituting the non-linear element and the signal input wiring are made of a high conductive metal layer of the same material. It is characterized by having been formed.

Further, a method for manufacturing an element substrate according to the present invention comprises:
A first conductor, a non-linear electric conductor, and a second conductor are sequentially laminated on a substrate, and a non-linear element having a non-linear current-voltage characteristic in an overlapping portion thereof is formed by a signal input wiring and a pixel. In the method for manufacturing an element substrate provided between the electrode and the electrode, the second conductor constituting the nonlinear element and the signal input wiring are formed of a high conductive metal layer of the same material.

Further, in the electro-optical device according to the present invention, the first conductor, the non-linear electric conductor, and the second conductor are sequentially laminated on the substrate, and the overlapping portions thereof are non-linear in current-voltage characteristics. Substrate having a non-linear element having a property provided between a signal input wiring and a pixel electrode, and a second conductor constituting the non-linear element and the signal input wiring formed of a highly conductive metal layer of the same material And a counter substrate having electrodes on its inner surface facing the element substrate, and a liquid crystal layer interposed between the two substrates.

[0029]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, several reference examples for reducing the wiring resistance, an element substrate according to the present invention, a method for manufacturing the same, and specific examples of an electro-optical device using the element substrate will be described with reference to the drawings. It will be described based on the following.

REFERENCE EXAMPLE 1 FIG. 1 is a plan view of an element substrate showing a reference example, and FIG. 2 is an enlarged sectional view of the element portion along the line AA in FIG. Hereinafter, members having the same functions as those of the above-described conventional example will be described with the same reference numerals.

In the present embodiment, a single ordinary MIM element S is provided for each pixel as a non-linear element, similarly to the above-mentioned conventional example 1, and the inside of the conductor 11 forming the wiring 2 is
The high conductive metal layer 4 is formed along the longitudinal direction of the wiring 2. In particular, in this example, aluminum is used as the highly conductive metal layer 4.

The aluminum may be aluminum alone or an aluminum alloy. The aluminum alloy may be, for example, Al-C
A u alloy, an Al-Mg alloy, or the like can be used. Further, not only aluminum but also copper alone, a copper alloy or other highly conductive metal materials may be used. As the material of the other members, the same materials as in the conventional example can be used.

By providing the highly conductive metal layer 4 along the wiring 2 as described above, the wiring resistance of the wiring 2 can be reduced.

In manufacturing the above-mentioned element substrate,
For example, it can be manufactured in the following manner. First, as shown in FIG. 3, a highly conductive metal thin film made of aluminum or the like constituting the highly conductive metal layer 4 is formed on the substrate 1 by sputtering or the like, and is patterned into a predetermined shape by photo etching or the like. A highly conductive metal layer 4 is formed.

On the highly conductive metal layer 4, the conventional example 1
In the same manner as described above, a film of tantalum or the like constituting the first conductor 11 is formed, and the film is formed into a predetermined planar shape by photoetching to form the first conductor 11 as shown in FIG. Thereafter, the nonlinear electric conductor layer 12, the second conductor 13, and the pixel electrode 3 may be formed in the same manner as in the first conventional example.

FIG. 5 is a longitudinal sectional view of a reference example in which a liquid crystal display device as an electro-optical device is formed using the above-mentioned element substrate. In the drawing, reference numeral 1 denotes an element substrate configured as shown in FIGS. 1 and 2, reference numeral 51 denotes an opposing substrate arranged so as to oppose the element substrate 1, and an opposing electrode 52 is provided on the inner surface thereof. The liquid crystal layer 53 is interposed between 51.

As described above, the element substrate 1 is provided with the highly conductive metal layer 4 along the signal input wiring 2, thereby reducing the wiring resistance. It is possible to obtain.

[Reference Example 2] FIG. 6 is a plan view of an element substrate showing another reference example, and FIG. 7 is an enlarged sectional view of an element portion taken along line AA in FIG.

In the present embodiment, a single lateral type MIM element S is provided for each pixel as a non-linear element as in the above-mentioned conventional example 2. Is formed with a highly conductive metal layer 4 made of aluminum along the longitudinal direction of the wiring 2.

In manufacturing the above element substrate,
Although omitted in the figure, for example, a highly conductive metal layer 4 is formed on the substrate 1 in advance in the same manner as in Reference Example 1, and thereafter, the processes shown in FIGS. The first conductor 11 and the insulating layer 1 are sequentially executed as described above.
2 ′, the nonlinear electric conductor layer 12, the second conductor 13, and the pixel electrode 3 may be formed. Also, in the same manner as in the conventional example 2, the process shown in FIGS.
84 can also be manufactured.

The material of the highly conductive metal layer 4 can be appropriately changed as in the case of the first embodiment, and other materials can be the same as those of the conventional example. The same applies to reference examples and examples described later. Also in this example, an electro-optical device such as a liquid crystal display device similar to that shown in FIG. 5 can be formed using the above-described element substrate, and a good display can be obtained at a low voltage.

[Embodiment 3] FIG. 8 is a plan view of an element substrate showing still another embodiment, and FIG. 9 is a sectional view of the element section taken along line AA in FIG.

This embodiment is similar to the prior art 3 except that ordinary back-to-back type MIM elements S1 and S2 are provided as nonlinear elements. A highly conductive metal layer 4 made of aluminum is provided inside the body 11 along the longitudinal direction of the wiring 2.
Is formed.

In manufacturing the above element substrate,
Although not shown in the figure in this example, for example,
The highly conductive metal layer 4 is previously formed on the substrate 1 in the same manner as described above, and thereafter, the processes shown in FIGS.
1. The nonlinear electric conductor layer 12, the second conductor 13, and the pixel electrode 3 may be formed.

Also in this embodiment, an electro-optical device such as a liquid crystal display device similar to that shown in FIG. 5 can be formed by using the above-mentioned element substrate, and a good display can be obtained at a low voltage. .

[Reference Example 4] FIG. 10 is a plan view of an element substrate showing still another reference example, and FIG. 11 is an enlarged sectional view of the element portion along the line AA in FIG.

In the present embodiment, as in the case of the conventional example 4, a back-to-back type lateral MI as a nonlinear element is used.
In the element provided with the M elements S1 and S2, a high conductive metal layer 4 made of aluminum or the like is provided along the longitudinal direction of the wiring 2 inside the conductor 11 forming the wiring 2 in the same manner as in the above example.
Is formed. By providing the highly conductive metal layer 4 along the wiring 2 as described above, the wiring resistance of the wiring 2 can be reduced.

In manufacturing the above element substrate,
For example, it can be manufactured in the following manner. 12 to 19 show an example of the manufacturing process, in which (a) is a plan view and (b) is a cross-sectional view of the element portion along a broken line in (a).

(1) First, a highly conductive metal layer 4
A highly conductive metal thin film made of aluminum or the like is formed by sputtering or the like, and is patterned into a predetermined shape by photoetching or the like to form a highly conductive metal layer 4 on the substrate 1 as shown in FIG. I do. (2) A film of tantalum or the like constituting the first conductor 11 is formed on the highly conductive metal layer 4 in the same manner as in the conventional example 1,
The film is formed into a predetermined planar shape by photoetching to form a first conductor 11 as shown in FIG. (3) The first conductor 11 is anodized or thermally oxidized to form an insulating layer 12 'of tantalum oxide or the like on the surface of the first conductor 11, as shown in FIG. (4) The insulating layer 12 'on the side surface of the first conductor 11 is removed by photo etching or the like as shown in FIG. (5) Next, as shown in FIG. 16, a non-linear electric conductor 12 is formed on the side surface of the first conductor 11. (6) Then, the first conductor 11 and the non-linear electric conductor 12 between the part constituting the element and the part constituting the wiring 2 are removed by photoetching or the like as shown in FIG. At this time, a contact hole H for conducting the conductive connection between the highly conductive metal layer 4 and the second conductor 13 is formed at the same time by the above-mentioned photoetching. At this time, the highly conductive metal layer 4 is used as an etching stopper. Can be used. (7) Next, a film of chromium or the like constituting the second conductor 13 is formed, and the film is formed into a predetermined planar shape by photoetching or the like to form the second conductor 13 as shown in FIG. I do. (8) Finally, a film of ITO or the like forming the pixel electrode may be formed, and the film may be patterned into a predetermined shape by etching or the like to form the pixel electrode 3 as shown in FIG.

If the highly conductive metal layer 4 made of aluminum or the like is exposed to the outside when the above-described pixel electrode 3 is etched, it is difficult to select an etching material. When covered with the conductor 11 or the like, there is an advantage that the above-mentioned inconvenience is not caused, and there is no problem in rubbing resistance when used in a liquid crystal display device or the like.

Also in the present embodiment, the insulating layer 12 'can be formed by thermal oxidation or an insulating member such as a polyimide film as in the case of the conventional example 2.
Further, in the above reference example, the contact hole H was formed for conductively connecting the highly conductive metal layer 4 and the second conductor 13. However, the insulator 12 in the wiring 2 was peeled off, and the second The conductors 13 can be directly connected to each other for connection.

FIG. 20 is a longitudinal sectional view of a reference example in which a liquid crystal display device as an electro-optical device is formed by using the above-mentioned element substrate. In the drawing, reference numeral 1 denotes an element substrate configured as shown in FIGS. 10 and 11, reference numeral 51 denotes an opposing substrate disposed so as to oppose the element substrate 1, and an opposing electrode 52 is provided on the inner surface thereof. The liquid crystal layer 53 is interposed between 51.

As described above, the element substrate 1 is provided with the highly conductive metal layer 4 along the signal input wiring 2, thereby reducing the wiring resistance. It is possible to obtain.

Reference Example 5 FIG. 21 is a plan view of an element substrate showing still another reference example, and FIG. 22 is an enlarged sectional view of the element portion taken along line AA in FIG.

In the present embodiment, a highly conductive metal layer 4 made of aluminum or the like is formed inside the conductor 11 of the wiring 2 along the longitudinal direction of the wiring 2 in the same manner as in the fourth embodiment. The two lateral elements S1 and S2 of the back-to-back method in Example 4 are connected to the side surface of the wiring 2;
It is provided on one side surface of the conductor 11 between the wiring 2 and the pixel electrode 3.

That is, one element S1 is composed of the side surface of the conductor 11 constituting the wiring 2, the nonlinear electric conductor 12 and the second conductor 13 formed on the surface, and the other element S2 is Conductor 11 between wiring 2 and pixel electrode 3
And a non-linear electric conductor 12 and a second electric conductor 13 formed on the surface thereof. The pixel electrode 3 is configured to be directly conductively connected to the surface of the conductor 11 between the wiring 2 and the pixel electrode 3, and the pixel electrode 3 and the conductor 11, the nonlinear electric conductor 12, and the conductor 13 The same material as that of the above-mentioned conventional example is used.

With the above-described configuration, there is an advantage that the contact hole H for electrically connecting the conductor 11 of the wiring 2 and the second conductor 13 is not required as in the fourth embodiment.

In manufacturing the above element substrate,
For example, it can be manufactured in the following manner. First, the conductor 11 and the non-linear electric conductor 12 are formed on the substrate 1 in the same manner according to the manufacturing processes (1) to (5) in the fourth embodiment. Then, as shown in FIG.
The insulating layer 12 ′ on the conductor 11 and the part of the nonlinear electric conductor 12 are separated by photoetching or the like, and the conductor 11 and the nonlinear electric conduction between the part constituting the element S 2 and the wiring 2 are removed. The body 12 is cut off by photoetching or the like. Next, after forming the second conductor 13 as shown in FIG. 24, the pixel electrode 3 may be formed and connected to the conductor 11 as shown in FIG.

In the reference example, a part of the non-linear electric conductor 12 on the first conductor 11 is peeled off and the pixel electrode 3 and the first
The pixel electrode 3 is connected to the first conductor 11 by forming the same contact hole as in the first embodiment in the nonlinear electric conductor 12 on the first conductor 11. 11 can also be connected. Also in this embodiment, the insulating layer 12 'can be formed by thermal oxidation, or can be formed of an insulating member such as a polyimide film as in the case of the conventional example 2.

Although not shown in the figure in this example, an electro-optical device such as a liquid crystal display device similar to that shown in FIG. 20 can be formed by using the above-described element substrate. Can be obtained.

Reference Example 6 FIG. 26 is a plan view of an element substrate showing still another reference example, and FIG. 27 is an enlarged cross-sectional view of the element portion taken along line AA in FIG.

In the present embodiment, a single ordinary MIM element S is provided for each pixel as a non-linear element, similarly to the above-mentioned prior art 1, and the conductor 11 forming the wiring 2 is formed similarly to the first embodiment. Inside, a highly conductive metal layer 4 is formed along the longitudinal direction of the wiring 2, and the pixel electrode 3 is formed of a metal of the same material as the highly conductive metal layer 4.

The conductor 13 forming the wiring 2 as described above
When the highly conductive metal layer 4 is provided thereon, the wiring resistance can be reduced, and when the metal layer 4 is provided on the surface of the pixel electrode 3, the pixel electrode 3 can be used as a reflection layer. The highly conductive metal layer 4 and the metal layer 4 of the pixel electrode 3 are not necessarily made of the same material, but if they are made of the same material, they can be easily formed simultaneously in one process as described later. be able to.

In manufacturing the above-mentioned element substrate,
For example, as shown in FIG. 28, a highly conductive metal thin film made of aluminum or the like constituting the highly conductive metal layer 4 and the pixel electrode 3 is formed on the substrate 1 by sputtering or the like, and this is subjected to a predetermined process by photoetching or the like. The highly conductive metal layer 4 and the pixel electrode 3 are formed by patterning into a shape. The first conductor 1 is formed on the highly conductive metal layer 4 in the same manner as in the first conventional example.
The first conductor 11 is formed as shown in FIG. 29 by forming a film of tantalum or the like constituting the film 1 and forming the film into a predetermined planar shape by photoetching. Thereafter, the nonlinear electric conductor layer 12 and the second conductor 13 may be formed in the same manner as in the first conventional example.

FIG. 30 is a longitudinal sectional view of a reference example in which a liquid crystal display device as an electro-optical device is formed using the above-mentioned element substrate. In the drawing, reference numeral 1 denotes an element substrate configured as shown in FIGS. 26 and 27, reference numeral 51 denotes an opposing substrate disposed so as to oppose the element substrate 1, and an opposing electrode 52 is provided on the inner surface thereof. The liquid crystal layer 53 is interposed between 51.

As described above, the element substrate 1 is provided with the highly conductive metal layer 4 along the signal input wiring 2, thereby reducing the wiring resistance. In addition to the provision of the metal layer 4 on the surface of the pixel electrode 3, an electro-optical device such as a reflective liquid crystal display device can be configured without providing a separate reflector or the like. In particular, the present invention is effective for an electro-optical device such as a liquid crystal display device of a type in which a liquid crystal of a polymer dispersion type liquid crystal or a guest host mode is used as the liquid crystal layer 53 and a display does not require a polarizing plate.

On the back side of the electro-optical device, that is, on the lower side of the element substrate 1 in the drawing, as shown in FIG. 30, a reflecting plate 6 such as a mirror or a light scattering plate or a light shielding plate is provided as necessary. By doing so, it is possible to prevent light from leaking to the rear side from the gap between the adjacent pixel electrodes, or to prevent unnecessary light from entering from the rear side to lower the display performance and the like.

REFERENCE EXAMPLE 7 The above reference example 6 is the same as the conventional example 1 described above.
As described above, the case where a single ordinary MIM element S is used as the nonlinear element has been described as an example. However, the element using the single lateral type MIM element S as the nonlinear element as in the conventional example 2 or As in the above-mentioned conventional example 3, the back-to-back type ordinary MIM element S1
In the device using S2 or the device using lateral MIM devices S1 and S2 in the back-to-back system as the nonlinear device as in the above-described conventional example 4, the longitudinal length of the wiring 2 is the same as in the above-mentioned reference example 6. The highly conductive metal layer 4 is formed along the direction, and the pixel electrode 3 is
It can also be formed of the same material or a different material metal.

In manufacturing the element substrate as described above, a highly conductive metal layer 4 and a pixel electrode 3 are formed on the substrate 1 in the same manner as in the above-mentioned Reference Example 6, and thereafter, the above-mentioned Conventional Example 2 or First conductor 11, nonlinear electric conductor layer 12, second conductor 13 in the same manner as in Example 3 or Conventional Example 4.
May be formed. Also, an electro-optical device such as a liquid crystal display device as shown in FIG. 20 can be formed by using the element substrate configured as described above in the same manner as in the sixth embodiment. Thus, a reflection-type device with less noise can be obtained.

[Embodiment 8] Two lateral elements S1 and S in the back-to-back system in Embodiment 5 described above.
2 can be configured in the same manner as in Reference Example 6 above, provided on the side surface of the wiring 2 and on one side surface of the conductor 11 between the wiring 2 and the pixel electrode 3.

FIG. 31 is a plan view of an element substrate showing one example thereof, and FIG. 32 is an enlarged sectional view of the element portion along the line AA in FIG. Along with forming a highly conductive metal layer 4 made of aluminum or the like, the pixel electrode 3 is formed of a metal of the same material as the highly conductive metal layer 4. However, it can be formed of a different material metal.

When the pixel electrode 3 is formed of metal as described above, the pixel electrode 3 can be used as a reflection layer as in the case of the sixth embodiment. If the highly conductive metal layer 4 of the wiring 2 and the metal layer 4 of the pixel electrode 3 are made of the same material, they can be easily formed simultaneously by one process as described later.

Further, as shown in the above reference example, two elements S1
When the S2 is provided on the side surface of the wiring 2 and one side surface of the conductor 11 between the wiring 2 and the pixel electrode 3, and the pixel electrode 3 made of metal is provided on the substrate 1,
A contact hole for conductively connecting the conductor 11 and the conductor 13 of the wiring 2 as described in
In order to electrically connect the conductor 11 and the pixel electrode 3 between the wiring 2 and the pixel electrode 3 as in the above, there is an advantage that there is no trouble to peel off a part of the nonlinear electric conductor 12 on the conductor 11. is there.

In manufacturing the above-mentioned element substrate,
For example, it can be manufactured in the following manner. 33 to 38 show an example of the manufacturing process, in which (a) is a plan view and (b) is a cross-sectional view of the element portion along a broken line in (a).

(1) First, a highly conductive metal film made of aluminum or the like constituting the highly conductive metal layer 4 is formed on the surface of the substrate 1 by sputtering or the like, and the metal film is formed into a predetermined shape by photo etching or the like. Then, as shown in FIG. 33, a highly conductive metal layer 4 along the wiring 2 and a pixel electrode 3 made of a metal of the same material are formed as shown in FIG. (2) Next, a conductive film such as tantalum constituting the conductor 11 is formed thereon, and the conductive film is patterned into a predetermined planar shape by photoetching to form a part of the MIM element as shown in FIG. Constituent conductor 11 and wiring 2
And the conductor 11 which constitutes a part of the conductor 11 are formed. (3) The conductor 11 is anodized or thermally oxidized to form an insulating layer 12 'of tantalum oxide or the like on the surface as shown in FIG. (4) Next, the insulating layer 12 'on the side surface of the conductor 11 is removed by photoetching or the like to leave the insulating layer 12' on the upper surface of the conductor 11 as shown in FIG. (5) The above-mentioned conductor 11 is again subjected to anodic oxidation or thermal oxidation to form a non-linear electric conductor 12 on the side surface as shown in FIG. (6) Then, as shown in FIG. 38, the conductor 11 and the insulating layer 12 'and the non-linear electric conductor 12 between the part constituting the element and the wiring 2 are cut off by photoetching or the like, and the second conductive material is removed. A second conductive body 13 may be formed by forming a conductive film of chrome or the like constituting the body 13 and forming the conductive film into a predetermined planar shape by photoetching or the like.

In the above manufacturing processes (3) and (5), when the conductor 11 is anodized to form the insulating layer 12 ′ and the nonlinear electric conductor 12, the pixel electrode 3 made of aluminum or the like is exposed. The portion is oxidized to form an oxide film such as alumina on the surface. However, there is almost no problem in using the pixel electrode 3 as a reflection layer. Rather, the oxide film serves as a protective film to form a liquid crystal display device. When used in the electro-optical device described above, there are advantages that a short circuit with the counter electrode can be prevented, and that redundancy against defects due to film residue or the like can be increased. The same applies to the case where the lateral type MIM element is formed by anodic oxidation in the above-described reference example 7.

When the above-mentioned oxide film is unnecessary,
It is also possible to selectively remove all or a part of it. For example, in the case of alumina, phosphoric acid-chromic acid (AR
S2341) or the like can be easily removed.

Although not shown in the figure in this example, the same electro-optical device as the liquid crystal display device shown in FIG. 30 can be formed by using the above-mentioned element substrate. The effect of is obtained.

REFERENCE EXAMPLE 9 FIG. 39 is a plan view of an element substrate showing another reference example in which a highly conductive metal layer is provided along a wiring and a pixel electrode has a reflection function. FIG. 40 is a plan view of FIG. It is an expanded sectional view of an element section which meets an AA line.

In the present embodiment, ordinary back-to-back type MIM elements S1 and S2 are provided between the wiring 2 and the pixel electrode 3 as non-linear elements, and both elements S1 and S2 are made of a conductor made of tantalum or the like. 11 and a non-linear electric conductor 12 made of tantalum oxide or the like and a conductor 13 made of chromium or the like
In addition, the wiring 2 and the pixel electrode 3 are composed of a conductor made of chromium or the like of the same material as the second conductor 13 constituting the elements S1 and S2 and a highly conductive metal layer 4 of aluminum or the like. It is composed.

When the wiring 2 is composed of the highly conductive metal layer 4 as described above, the wiring resistance can be reduced and the pixel electrode 3
When the surface of is formed of the metal layer 4 as described above, the pixel electrode 3 can be used as a reflective layer.

The highly conductive metal layer 4 on the wiring 2 and the metal layer 4 of the pixel electrode 3 do not necessarily have to be made of the same material. It can be easily formed simultaneously with the process. In addition, the conductor 2 made of chromium or the like is omitted, the wiring 2 and the pixel electrode 3 are formed only of the highly conductive metal layer 4 made of aluminum or the like, and the elements S1 and S2 are formed with the conductor 11 made of tantalum or the like. It can also be composed of the nonlinear electric conductor 12 made of tantalum oxide or the like and the metal layer 4. Further, for example, an alloy of nickel and gold may be formed on the conductor 13 made of chromium or the like instead of aluminum.

In manufacturing the element substrate as described above, it can be manufactured, for example, in the following manner. FIG.
1 to 43 show an example of the manufacturing process, in which (a) is a plan view, and (b) is a cross-sectional view of the element portion along a broken line in (a).

(1) First, a conductive film such as tantalum constituting the conductor 11 is formed on the substrate 1, and the conductive film is formed into a predetermined planar shape by photoetching to form an MIM element as shown in FIG. Is formed. (2) The conductor 11 is thermally oxidized, for example, to form a non-linear electric conductor layer 12 such as tantalum oxide on the surface as shown in FIG. (3) Next, a conductive film such as chromium constituting the second conductor 13 and a high conductive metal layer 4 such as aluminum are formed by sputtering or the like, and the conductive film and the high conductive metal layer 4 are formed. The second conductor 13 forming the elements S1 and S2, the wiring 2 and the pixel electrode 3 may be formed by patterning into a predetermined planar shape by photo etching or the like as shown in FIG.

When the conductor 13 made of chromium or the like is omitted as described above, the formation of the metal film made of chromium or the like is omitted and the substrate 1 including the nonlinear electric conductor 12 is omitted.
A metal film such as aluminum may be directly formed on the upper surface of the substrate and patterned at the same time into a predetermined shape by photo etching or the like.

As described above, instead of aluminum, an alloy of nickel and gold is used instead of the second
When it is formed on the conductor 13 described above, it can also be formed by a plating method or the like.

An electro-optical device such as a liquid crystal display device similar to that shown in FIG. 30 can be formed by using the element substrate configured as described above, and the same effects can be obtained.

Reference Example 10 FIG. 44 is a plan view of an element substrate showing still another reference example in which a highly conductive metal layer is provided along the wiring and the pixel electrode has a reflection function, and FIG. 45 is FIG. FIG. 4 is an enlarged cross-sectional view of the element section taken along line AA in FIG.

In this embodiment, a back-to-back lateral MIM element S1 or S2 is provided between the wiring 2 and the pixel electrode 3 as a nonlinear element.
Is composed of a conductor 11 made of tantalum or the like, a non-linear electric conductor 12 made of tantalum oxide or the like, and a conductor 13 made of chromium or the like, and the wiring 2 and the pixel electrode 3 constitute the elements S1 and S2. 2 and a conductor 13 made of chromium or the like of the same material and a highly conductive metal layer 4 made of aluminum or the like.

When the wiring 2 is composed of the highly conductive metal layer 4 as described above, the wiring resistance can be reduced in the same manner as in the ninth embodiment, and when the surface of the pixel electrode 3 is composed of the metal layer 4 as described above. The pixel electrode 3 can be used as a reflection layer.

The highly conductive metal layer 4 on the wiring 2 and the metal layer 4 of the pixel electrode 3 are not necessarily made of the same material, and the conductor 13 made of chromium or the like may be omitted. The material other than aluminum may be used for the highly conductive metal layer 4 as in the case of the above-described reference example.

In manufacturing the element substrate as described above, it can be manufactured, for example, in the following manner. FIG.
6 to 49 show an example of the manufacturing process, in which (a) is a plan view and (b) is a cross-sectional view of the element portion along the broken line in (a).

(1) First, a conductive film such as tantalum constituting the conductor 11 is formed on the substrate 1, and the conductive film is formed into a predetermined planar shape by photoetching to form an MIM element as shown in FIG. Is formed. (2) The conductor 11 is thermally oxidized, for example, to form an insulating layer 12 'on the front surface thereof, and the insulating layer 12' on the side surface of the conductor 11 is removed by photoetching or the like, as shown in FIG. An insulating layer 12 ′ made of tantalum oxide or the like is formed on the conductor 11. Alternatively, an insulating film 12 ′ such as a polyimide film is formed on the conductor 11. (3) Next, the conductor 11 is thermally oxidized to form a non-linear electric conductor layer 12 on the side surface as shown in FIG. (4) Finally, a conductive film such as chromium constituting the second conductor 13 and a highly conductive metal layer 4 such as aluminum are formed by sputtering or the like, and the conductive film and the highly conductive metal layer 4 are formed. Are patterned into a predetermined planar shape by photo-etching or the like, and as shown in FIG.
2, the wiring 2, and the pixel electrode 3 may be formed.

When the conductor 13 made of chromium or the like is omitted as described above, the above-described nonlinear electric conductor 12 is used.
A metal film such as aluminum may be directly formed on the upper surface of the substrate 1 including silicon and patterned at the same time into a predetermined shape by photoetching or the like, and an alloy of nickel and gold may be used instead of aluminum as described above. When formed on the second conductor 13 made of chromium or the like,
It can be formed by a plating method or the like as in the case of the above example.

Also in the present embodiment, an electro-optical device such as a liquid crystal display device similar to that shown in FIG. 30 can be formed by using the element substrate configured as described above, and the same effects can be obtained.

REFERENCE EXAMPLE 11 FIG. 50 is a plan view of an element substrate showing still another reference example in which a highly conductive metal layer is provided along the wiring and the pixel electrode has a reflection function. FIG. FIG. 4 is an enlarged cross-sectional view of the element section taken along line AA in FIG.

In this reference example, the lateral type back-to-back type devices S1 and S2 and the wiring 2 are made of a first conductor 11 made of tantalum or the like and tantalum oxide or the like, as in the above-mentioned conventional example 4. The pixel electrode 3 is formed of the non-linear electric conductor 12 and the second conductor 13 made of chromium or the like, and the pixel electrode 3 is formed of the conductor 13 made of the same material as the second conductor. A highly conductive metal layer 4 made of aluminum or the like is provided on a conductor 13 such as aluminum.

Also in the present embodiment, the wiring resistance can be reduced by providing the highly conductive metal layer 4 on the conductor 13 forming the wiring 2 as described above, and the metal layer 4 is formed on the surface of the pixel electrode 3. With the provision, the pixel electrode 3 can be used as a reflection layer.

The highly conductive metal layer 4 on the wiring 2 and the metal layer 4 of the pixel electrode 3 are not necessarily made of the same material, and the conductor 13 made of chromium or the like may be omitted. The material other than aluminum may be used for the highly conductive metal layer 4 as in the case of the above-described reference example.

In manufacturing the above-described element substrate,
For example, it can be manufactured in the following manner. First, according to the manufacturing processes (1) to (5) in the conventional example 4, the conductors 11 forming the wiring 2 on the substrate 1 in the same manner.
And the nonlinear electric conductor 12 and the first electric conductor 11 and the non-linear electric conductor 12 constituting the elements S1 and S2, and the electric conduction between the part constituting the element and the wiring 2 as shown in FIG. The body 11, the insulator 12 'and the nonlinear electric conductor 12 are cut off.

Next, as shown in FIG. 53, a metal film such as chromium and a metal film such as aluminum constituting the conductor 13 are formed on the upper surface of the substrate 1 including the nonlinear electric conductor 12 by sputtering or the like. What is necessary is just to pattern into a predetermined shape by photoetching etc. At this time, when the metal film such as chromium and the metal film such as aluminum constituting the conductor 13 are formed in the same plane shape as shown in the illustrated example, they can be simultaneously patterned.

In the case where the conductor 13 made of chromium or the like is omitted as described above, the formation of the film made of chromium or the like is omitted, and aluminum is directly formed on the upper surface of the substrate 1 including the nonlinear electric conductor 12. May be formed and then patterned simultaneously into a predetermined shape by photoetching or the like. In the case where an alloy of nickel and gold is formed on the second conductor 13 made of chromium or the like instead of aluminum as described above, the alloy may be formed by a plating method or the like. Is the same as

FIG. 54 is a longitudinal sectional view of a reference example in which a liquid crystal display device as an electro-optical device is formed using the above-mentioned element substrate. In the drawing, reference numeral 1 denotes an element substrate configured as shown in FIGS. 21 and 22; 51, a counter substrate disposed so as to face the element substrate 1; a counter electrode 52 is provided on the inner surface thereof; The liquid crystal layer 53 is interposed between 51.

The element substrate 1 is provided with the wiring 2 as described above.
A high conductive metal layer 4 along the pixel electrode 3
Is provided with a metal layer 4 on the surface of the pixel. By providing the highly conductive metal layer 4 along the wiring 2, the wiring resistance is reduced, and a good display can be obtained at a low voltage. By providing the metal layer 4 on the surface of the electrode 3, an electro-optical device such as a reflective liquid crystal display device can be configured without providing a separate reflector or the like. In particular, the present invention is effective for an electro-optical device such as a liquid crystal display device of a type in which a liquid crystal of a polymer dispersion type liquid crystal or a guest host mode is used as the liquid crystal layer 53 and a display does not require a polarizing plate. In addition, a reflection plate or the like can be provided on the back side of the substrate 1 as necessary, similarly to FIG.

[Embodiment 1] FIG. 55 is a plan view of an element substrate according to an embodiment of the present invention in which a highly conductive metal layer is provided along a wiring and a pixel electrode has a reflection function.
FIG. 55 is an enlarged sectional view of the element portion taken along line AA in FIG. 55.

This embodiment is different from the device S1 in the conventional example 4 described above.
A high conductive metal 4 made of aluminum or the like is used as the second conductor 13 constituting the wiring 2 and S2, and the pixel electrode 3 is formed of the same high conductive metal 4 as described above. The transparent conductive layer 5 made of ITO or the like is provided on the conductive metal layer 4. Fine irregularities may be formed on the surface of the conductor layer 5 as necessary. The other configuration is the same as that of the fourth conventional example.

The above-mentioned highly conductive metal 4 may be either aluminum alone or an aluminum alloy, or may be copper alone or a copper alloy, or another metal. Further, the transparent conductor layer 5 is not limited to ITO, and another transparent or translucent conductor may be used.

In manufacturing the above-mentioned element substrate,
For example, it can be manufactured in the following manner. First, the conductor 11, the insulator 12 ′, and the non-linear electric conductor 12 are formed on the substrate 1 in the same manner according to the manufacturing processes (1) to (5) in the conventional example 4 and FIG.
As shown in (1), the conductor 11, the insulator 12 ', and the non-linear electric conductor 12 between the part constituting the element and the wiring 2 are cut off.

Next, a highly conductive metal layer 4 made of aluminum or the like constituting the second conductor 13 is formed on the upper surface of the substrate 1 including the above-mentioned nonlinear electric conductor 12, and the metal layer 4 is photo-etched. And the like and patterned into a predetermined shape as shown in FIG.
A highly conductive metal layer 4 constituting the second conductor 13 is formed thereon, and a pixel electrode 3 made of the same highly conductive metal layer 4 is formed. Then, a transparent conductive film made of ITO or the like is formed on the pixel electrode 3 by sputtering or the like, and is patterned into a predetermined shape by photoetching or the like as shown in FIG. Good.

In the case where fine irregularities are formed on the surface of the conductor layer 5 as described above, the sputtering conditions for forming the conductor layer 5 may be appropriately adjusted, or light may be applied after the sputtering. A surface treatment such as coaching may be performed. As the above sputtering conditions,
For example, the temperature may be lowered to increase the rate.

Although not shown in the drawings in this example, an electro-optical device such as a liquid crystal display device similar to that shown in FIG. 30 or FIG. 54 can be formed by using the above-mentioned element substrate, and the same effect can be obtained. Can be In particular, the reflection efficiency can be improved by providing the transparent conductor layer 5 on the surface of the pixel electrode 3 made of metal.

In this case, the film thickness of the transparent conductive layer 5 is set so that the reflectance can be maximized by the interference between the reflective surface on the surface of the pixel electrode 3 made of metal and the light from the transparent conductive layer 5. Preferably, for example, when ITO is used, the film thickness is preferably about 100 to 1500 angstroms.

It is also possible to control the color tone of the reflected light by utilizing the above-mentioned interference effect. For example, when ITO is used for the transparent conductor
The reflected light at 0 angstrom is light blue, 1000
At Angstroms, yellow reflected light is obtained at 1500 Angstroms, and brown reflected light is obtained at 1500 Angstroms.

By controlling the color tone of the reflected light as described above, visibility can be enhanced, and this is particularly effective for adjusting the color tone when combined with the liquid crystal in the guest-host mode.

[Embodiment 2] FIG. 60 is a plan view of an element substrate showing another embodiment of the present invention in which a highly conductive metal layer is provided along a wiring and a pixel electrode has a reflection function.
FIG. 1 is an enlarged cross-sectional view of the element portion taken along line AA in FIG.

In this embodiment, the second conductor 13 in the fourth conventional example is formed of a highly conductive metal 4 such as aluminum, and the pixel electrode 3 is formed of tantalum of the same material as the first conductor 11. . Then, a fine concave portion G is formed on the surface of the pixel electrode 3 made of tantalum, and the second concave portion G is formed thereon.
This is covered with a highly conductive metal layer 4 of the same material as that of the conductor 13 of FIG.

Instead of using tantalum as the pixel electrode 3, another material such as a resin-based material or a metal material may be used. However, if the same material as the first conductor 11 is used as in the present embodiment, , Can be easily formed at the same time when the first conductor 11 is formed.

In manufacturing the above-described element substrate,
For example, it can be manufactured in the following manner. 62 to 67 show an example of the manufacturing process, in which (a) is a plan view and (b) is a cross-sectional view of the element portion along the broken line in (a).

(1) First, a conductive film such as tantalum is formed on the substrate 1, and the conductive film is patterned into a predetermined planar shape by photoetching to form a conductor 11 forming elements and wiring as shown in FIG. And a conductor 11 forming the pixel electrode 3, and a conductor 1 forming the pixel electrode 3
A concave portion G is formed on the surface of the substrate 1 by photoetching or the like. (2) The conductors 11 in the element portion and the wiring portion except for the conductor 11 constituting the pixel electrode 3 are anodized or thermally oxidized, and an insulating layer 12 ′ such as tantalum oxide is formed on the surface thereof as shown in FIG. To form (3) The insulating layer 12 'on the side surface of the conductor 11 is removed by photoetching or the like to leave the insulating layer 12' only on the upper surface of the conductor 11, as shown in FIG. (4) The conductor 11 is again anodized or thermally oxidized to form a non-linear electric conductor 1 on its side as shown in FIG.
Form 2 (5) Next, as shown in FIG. 66, the conductor 11 and the non-linear electric conductor 12 between the part constituting the element and the wiring 2
Are removed by photoetching or the like. (6) Finally, a highly conductive conductive film made of aluminum or the like constituting the second conductor 13 is formed, and the conductive film is formed into a predetermined planar shape by photoetching or the like, and as shown in FIG. In addition to forming the highly conductive metal layer 4 on the wiring portion, the highly conductive metal layer 4 may be formed on the surface of the pixel electrode 3 made of tantalum or the like.

Although not shown in the drawings in this example, an electro-optical device such as a liquid crystal display device similar to that shown in FIG. 30 or FIG. Can be In particular, the surface of the pixel electrode 3 shown in FIG.
As shown in FIG. 61 and by forming the fine concave portion G, the reflected light is scattered and the reflection efficiency can be increased.

The width w of the recess G is preferably about 0.5 to 50 μm in consideration of the manufacturing process and the scattering effect, and the depth d is preferably about 0.1 to 2 μm. Further, in order to enhance the scattering effect, it is preferable that the concave portion G has a shape as smooth as possible. In addition, when an electro-optical device such as a liquid crystal display device is configured, it is desirable that the pattern of the concave portion G has a random shape as much as possible so that specific interference fringes do not appear.

[0122]

As described above, the element substrate according to the present invention, the method for manufacturing the same, and the electro-optical device using the element substrate are provided on the substrate 1 with the first conductor 11, the non-linear electric conductor 12, and the second And the non-linear elements S1 and S2 whose overlapping portions have non-linear current-voltage characteristics are provided between the signal input wiring 2 and the pixel electrode 3. The nonlinear element S1
A second conductor constituting S2 and the signal input wiring 2
Formed of a highly conductive metal layer of the same material, it is possible to reduce the wiring resistance, to prevent the image quality from deteriorating due to crosstalk and the like as in the conventional case, and to improve the precision. A large aperture ratio can be obtained. In addition, since the driving voltage can be reduced, there is an effect that an electro-optical device such as a liquid crystal display device having good display characteristics at a low voltage can be provided.

[Brief description of the drawings]

FIG. 1 is a plan view of an element substrate showing a reference example.

FIG. 2 is an enlarged sectional view taken along line AA in FIG.

FIG. 3 is a process explanatory view showing an example of a manufacturing process of an element substrate in the reference example.

FIG. 4 is a process explanatory diagram showing an example of a manufacturing process of the element substrate in the reference example.

FIG. 5 is a longitudinal sectional view of an electro-optical device using the element substrate in the above reference example.

FIG. 6 is a plan view of an element substrate showing another reference example.

FIG. 7 is an enlarged sectional view taken along the line AA in FIG. 6;

FIG. 8 is a plan view of an element substrate showing still another reference example.

FIG. 9 is an enlarged sectional view taken along line AA in FIG. 8;

FIG. 10 is a plan view of an element substrate showing still another reference example.

FIG. 11 is an enlarged sectional view taken along line AA in FIG. 10;

FIG. 12 is a process explanatory view showing an example of a manufacturing process of the element substrate in the reference example.

FIG. 13 is a process explanatory view showing an example of the manufacturing process of the element substrate in the reference example.

FIG. 14 is a process explanatory view showing an example of a manufacturing process of the element substrate in the reference example.

FIG. 15 is a process explanatory view showing an example of the manufacturing process of the element substrate in the above reference example.

FIG. 16 is a process explanatory view showing an example of a manufacturing process of the element substrate in the reference example.

FIG. 17 is a process explanatory view showing an example of the manufacturing process of the element substrate in the above reference example.

FIG. 18 is an explanatory process diagram showing an example of the manufacturing process of the element substrate in the reference example.

FIG. 19 is a process explanatory view showing an example of the manufacturing process of the element substrate in the reference example.

FIG. 20 is a longitudinal sectional view of an electro-optical device using the element substrate in the reference example.

FIG. 21 is a plan view of an element substrate showing still another reference example.

FIG. 22 is an enlarged sectional view taken along line AA in FIG. 21;

FIG. 23 is an explanatory process diagram showing an example of the manufacturing process of the element substrate in the reference example.

FIG. 24 is a process explanatory view showing an example of the manufacturing process of the element substrate in the above reference example.

FIG. 25 is an explanatory process diagram showing an example of the manufacturing process of the element substrate in the reference example.

FIG. 26 is a plan view of an element substrate showing still another reference example.

FIG. 27 is an enlarged sectional view taken along line AA in FIG. 26;

FIG. 28 is an explanatory process diagram showing an example of the manufacturing process of the element substrate in the reference example.

FIG. 29 is a process explanatory view showing an example of the manufacturing process of the element substrate in the reference example.

FIG. 30 is a longitudinal sectional view of an electro-optical device using the element substrate in the above reference example.

FIG. 31 is a plan view of an element substrate showing still another reference example.

FIG. 32 is an enlarged sectional view taken along line AA in FIG. 31;

FIG. 33 is an explanatory process diagram showing an example of the manufacturing process of the element substrate in the reference example.

FIG. 34 is an explanatory process diagram showing an example of the manufacturing process of the element substrate in the reference example.

FIG. 35 is an explanatory process diagram showing an example of the manufacturing process of the element substrate in the reference example.

FIG. 36 is an explanatory process diagram showing an example of the manufacturing process of the element substrate in the reference example.

FIG. 37 is an explanatory process diagram showing an example of the manufacturing process of the element substrate in the reference example.

FIG. 38 is an explanatory process diagram showing an example of the manufacturing process of the element substrate in the reference example.

FIG. 39 is a plan view of an element substrate showing still another reference example.

40 is an enlarged cross-sectional view taken along line AA in FIG. 39.

FIG. 41 is a process explanatory view showing an example of the manufacturing process of the element substrate in the reference example.

FIG. 42 is an explanatory process diagram showing an example of the manufacturing process of the element substrate in the reference example.

FIG. 43 is an explanatory process diagram showing an example of the manufacturing process of the element substrate in the reference example.

FIG. 44 is a plan view of an element substrate showing still another reference example.

FIG. 45 is an enlarged sectional view taken along line AA in FIG. 44;

FIG. 46 is an explanatory process diagram showing an example of the manufacturing process of the element substrate in the reference example.

FIG. 47 is an explanatory process diagram showing an example of the manufacturing process of the element substrate in the reference example.

FIG. 48 is an explanatory process diagram showing an example of the manufacturing process of the element substrate in the reference example.

FIG. 49 is an explanatory process diagram showing an example of the manufacturing process of the element substrate in the reference example.

FIG. 50 is a plan view of an element substrate showing still another reference example.

FIG. 51 is an enlarged sectional view taken along line AA in FIG. 50;

FIG. 52 is an explanatory process diagram showing an example of the manufacturing process of the element substrate in the reference example.

FIG. 53 is an explanatory process diagram showing an example of the manufacturing process of the element substrate in the reference example.

FIG. 54 is a longitudinal sectional view of an electro-optical device using the element substrate in the reference example.

FIG. 55 is a plan view of an element substrate showing one embodiment of the present invention.

FIG. 56 is an enlarged sectional view taken along line AA in FIG. 55;

FIG. 57 is an explanatory process diagram showing an example of the manufacturing process of the element substrate in the embodiment.

FIG. 58 is a process explanatory view showing an example of the manufacturing process of the element substrate in the example.

FIG. 59 is a process explanatory view showing an example of the manufacturing process of the element substrate in the example.

FIG. 60 is a plan view of an element substrate showing another embodiment according to the present invention.

FIG. 61 is an enlarged sectional view taken along line AA in FIG. 60;

FIG. 62 is an explanatory process diagram showing an example of the manufacturing process of the element substrate in the above embodiment.

FIG. 63 is an explanatory process diagram showing an example of the manufacturing process of the element substrate in the embodiment.

FIG. 64 is an explanatory process diagram showing an example of the manufacturing process of the element substrate in the above embodiment.

FIG. 65 is an explanatory process diagram showing an example of the manufacturing process of the element substrate in the above embodiment.

FIG. 66 is an explanatory process diagram showing an example of the manufacturing process of the element substrate in the example.

FIG. 67 is an explanatory process diagram showing an example of the manufacturing process of the element substrate in the example.

FIG. 68 is a plan view showing an example of a conventional element substrate.

69 is an enlarged sectional view taken along line AA in FIG. 68.

FIG. 70 is an explanatory process diagram showing an example of the manufacturing process of the element substrate in the conventional example.

FIG. 71 is an explanatory process diagram showing an example of the manufacturing process of the element substrate in the conventional example.

FIG. 72 is a process explanatory view showing an example of the manufacturing process of the element substrate in the conventional example.

FIG. 73 is an explanatory process diagram showing an example of the manufacturing process of the element substrate in the conventional example.

FIG. 74 is a plan view showing another example of the conventional element substrate.

75 is an enlarged sectional view taken along line AA in FIG. 74.

FIG. 76 is an explanatory process diagram showing an example of the manufacturing process of the element substrate in the conventional example.

FIG. 77 is an explanatory process diagram showing an example of the manufacturing process of the element substrate in the conventional example.

FIG. 78 is a process explanatory view showing an example of the manufacturing process of the element substrate in the conventional example.

FIG. 79 is a process explanatory view showing an example of the manufacturing process of the element substrate in the conventional example.

FIG. 80 is a process explanatory view showing an example of a manufacturing process of the element substrate in the conventional example.

FIG. 81 is a process explanatory view showing an example of the manufacturing process of the element substrate in the conventional example.

FIG. 82 is an explanatory process diagram showing another example of the manufacturing process of the element substrate in the conventional example.

FIG. 83 is a process explanatory view showing another example of the manufacturing process of the element substrate in the conventional example.

FIG. 84 is a process explanatory view showing another example of the manufacturing process of the element substrate in the conventional example.

FIG. 85 is a plan view showing still another example of the conventional element substrate.

86 is an enlarged sectional view taken along line AA in FIG. 85.

FIG. 87 is an explanatory process diagram showing an example of the manufacturing process of the element substrate in the conventional example.

FIG. 88 is an explanatory process diagram showing an example of the manufacturing process of the element substrate in the conventional example.

FIG. 89 is a process explanatory view showing an example of the manufacturing process of the element substrate in the conventional example.

FIG. 90 is a process explanatory view showing an example of the manufacturing process of the element substrate in the conventional example.

FIG. 91 is an explanatory process diagram showing an example of the manufacturing process of the element substrate in the conventional example.

FIG. 92 is an explanatory process diagram showing an example of the manufacturing process of the element substrate in the conventional example.

FIG. 93 is a plan view showing still another example of the conventional element substrate.

94 is an enlarged cross-sectional view taken along line AA in FIG. 93.

FIG. 95 is a process explanatory view showing an example of a manufacturing process of the element substrate in the conventional example.

FIG. 96 is an explanatory process diagram showing an example of the manufacturing process of the element substrate in the conventional example.

FIG. 97 is an explanatory process diagram showing an example of the manufacturing process of the element substrate in the conventional example.

FIG. 98 is a process explanatory view showing an example of the manufacturing process of the element substrate in the conventional example.

FIG. 99 is an explanatory process diagram showing an example of the manufacturing process of the element substrate in the conventional example.

FIG. 100 is a process explanatory view showing an example of the manufacturing process of the element substrate in the conventional example.

FIG. 101 is a process explanatory view showing an example of the manufacturing process of the element substrate in the conventional example.

[Explanation of Signs] 1 Substrate 2 Wiring 3 Pixel electrode 11, 13, 21, 23 Conductor 12, 22 Non-linear electric conductor 4 Highly conductive metal layer S, S1, S2 Non-linear element

[Procedure amendment 2]

[Document name to be amended] Drawing

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FIG. 55

[Procedure amendment 3]

[Document name to be amended] Drawing

[Correction target item name] Fig. 56

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FIG. 56

[Procedure amendment 4]

[Document name to be amended] Drawing

[Correction target item name] FIG.

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FIG. 58

[Procedure amendment 5]

[Document name to be amended] Drawing

[Correction target item name] FIG.

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FIG. 59

[Procedure amendment 6]

[Document name to be amended] Drawing

[Correction target item name] FIG.

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FIG. 60

[Procedure amendment 7]

[Document name to be amended] Drawing

[Correction target item name] FIG.

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FIG. 61

[Procedure amendment 8]

[Document name to be amended] Drawing

[Correction target item name] Fig. 67

[Correction method] Change

[Correction contents]

FIG. 67

──────────────────────────────────────────────────の Continued on the front page (51) Int.Cl. ⁷ Identification FI FI Theme Court ゛ (Reference) H01L 21/88 R (72) Inventor Takeyoshi Ushiki 3-5-5 Yamato, Suwa City, Nagano Prefecture Seiko Epson Corporation the internal F-term (reference) 2H092 HA02 HA06 JA03 JA06 JB05 JB31 NA28 5C094 AA04 AA05 AA09 AA10 AA13 AA24 AA43 AA53 BA04 BA43 CA19 DA13 DB01 DB04 EA04 EA06 FA01 FA02 FB12 FB15 GB10 5F033 GG04 HH09 HH11 HH21 MM11 PP15 QQ24 QQ37 VV00 XX10 XX34

Claims (3)

[Claims] A first conductor, a non-linear electric conductor, and a second conductor are sequentially laminated on a substrate, and an overlapping portion of the first conductor, a non-linear electric conductor, and a second conductor has a non-linear element having a non-linear current-voltage characteristic. In an element substrate provided between an input wiring and a pixel electrode, a first or second conductor constituting the non-linear element, the signal input wiring and the pixel electrode are formed of a high conductive metal layer of the same material. An element substrate formed by: 2. A first conductor, a non-linear electric conductor and a second conductor are sequentially laminated on a substrate, and an overlapping portion of the first conductor, the non-linear electric conductor, and the second conductor is a non-linear element having a non-linear current-voltage characteristic. In a method of manufacturing an element substrate provided between an input wiring and a pixel electrode, a first or second conductor constituting the non-linear element and the signal input wiring and the pixel electrode are made of the same material with high conductivity. A method of manufacturing an element substrate, wherein the element substrate is formed simultaneously with a conductive metal layer. 3. A first conductor, a non-linear electric conductor, and a second conductor are sequentially laminated on a substrate, and an overlapping portion of the first conductor, the non-linear electric conductor, and the second conductor has a non-linear element having a non-linear current-voltage characteristic. An element provided between an input wiring and a pixel electrode, wherein the first or second conductor constituting the nonlinear element, the signal input wiring and the pixel electrode are formed of a highly conductive metal layer of the same material; An electro-optical device comprising a substrate, a counter substrate having electrodes on its inner surface facing the element substrate, and a liquid crystal layer interposed between the two substrates.