JP2002203687A - Light-emitting device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a light-emitting device and an electric apparatus that are bright, of low electric consumption and low cost. SOLUTION: By having an organic EL material in the metal oxide porous body containing heavy atoms, phosphorescence emission of the organic EL material, in which normally only fluorescence is observed, can be promoted and thereby an organic EL element capable of phosphorescence emission is obtained. This element has a high luminous efficiency as it can utilize phosphorescence and can be manufactured at low cost as the conventional organic EL material can be used. Using this organic EL element, a light-emitting device and an electric apparatus are manufactured.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

[0001] The present invention relates to an anode layer, a cathode layer,
Luminescence by applying an electric field (Electro Luminesc
ence: a layer containing an organic compound (hereinafter, referred to as an “organic compound layer”) from which an “EL” is obtained (hereinafter referred to as “organic compound layer”) was used as a light source. The present invention relates to a light emitting device. EL in an organic compound includes light emission (fluorescence) when returning from a singlet excited state to a ground state and light emission (phosphorescence) when returning to a ground state from a triplet excited state. The present invention relates to a light emitting device capable of promoting generation of phosphorescence by bringing a porous body into contact with an organic compound layer. Note that a light-emitting device in this specification refers to an image display device or a light-emitting device using an organic EL element as a light-emitting element. In addition, TA
B (Tape Automated Bonding) tape or TCP (Tape
Carrier Package) attached module, TAB
The light emitting device includes a module in which a printed wiring board is provided in front of a tape or a TCP, or a module in which an IC (integrated circuit) is directly mounted on an organic EL element by a COG (Chip On Glass) method.

[0002]

2. Description of the Related Art An organic EL device is a device that emits light when an electric field is applied, and has attracted attention as a next-generation flat panel display device because of its characteristics such as light weight, low DC drive voltage, and high-speed response. In addition, since it is a self-luminous type and has a wide viewing angle, it is considered to be effective as a display screen of a portable device.

[0003] The light emission mechanism of an organic EL element is based on the fact that electrons injected from a cathode and holes injected from an anode recombine to form a molecule in an excited state (hereinafter referred to as "molecular exciton"). It is said that when a molecular exciton returns to the ground state, it emits energy and emits light. The excited state can be a singlet state (S ^* ) or a triplet state (T ^* ), and its statistical generation ratio is considered to be S ^* : T ^* = 1: 3 (Reference 1). : Junji Kido, “Monthly Display Separate Volume Organic EL Display: From Basic to Latest Information” (Techno Times, pp. 28-29)).

However, at room temperature, light emission (phosphorescence) from a triplet excited state (T ^* ) of a general organic compound is not observed. This is the same for organic EL devices, and usually, light emission (fluorescence) from the singlet excited state (S ^* )
Only will be observed. Therefore, the theoretical limit of the internal quantum efficiency (the ratio of photons generated to injected carriers) in the organic EL device was set to 25% based on the fact that S ^* : T ^* = 1: 3.

Further, not all the generated light is emitted to the outside, and some of the light cannot be extracted due to the constituent materials (organic compound layers and electrodes) of the organic EL element and the refractive index inherent to the substrate. . The rate at which the generated light is extracted to the outside is called light extraction efficiency. In an organic EL device having a glass substrate, the extraction efficiency is said to be about 20%.

For the above reasons, even if all injected carriers form molecular excitons, the ratio of photons that can be finally extracted to the outside of the organic EL device with respect to the number of injected carriers (hereinafter referred to as “external quantum efficiency”) The theoretical limit was 25% x 20% = 5%. That is, even if all carriers are recombined, only 5% of the carriers can be extracted as light.

However, in recent years, an organic EL device capable of converting energy released when returning from a triplet excited state to a ground state (hereinafter referred to as “triplet excited energy”) into light emission has been successively announced, and its luminous efficiency has been improved. (2): DF O'Brien, MA Baldo, ME Th
ompson and SR Forrest, "Improved energy transfe
r in electrophosphorescent devices ", Applied Physi
cs Letters, vol. 74, No. 3, 442-444 (1999)) (Reference 3: Tetsuo Tsutsui, Moon-Jae Yang, Masayuki Yahir)
o, Kenji Nakamura, Teruichi Watanabe, Taishi Tsuj
i, Yoshinori Fukuda, Takeo Wakimoto and Satoshi Mi
yaguchi, "High Quantum Efficiency in Organic Light
-Emitting Devices with Iridium-Complex as a Triple
t EmissiveCenter ", Japanese Journal of Applied Phy
sics, Vol. 38, L1502-L1504 (1999)).

Reference 2 uses a metal complex containing platinum as a central metal (hereinafter referred to as “platinum complex”), and Reference 3 uses a metal complex containing iridium as a central metal (hereinafter referred to as “iridium complex”). Therefore, it can be said that each metal complex is characterized by introducing the third transition series element as a central metal. Some of them well exceed the theoretical limit of 5% for the external quantum efficiency mentioned above.

As shown in References 2 and 3, an organic EL device capable of converting triplet excitation energy into light emission can achieve a higher external quantum efficiency than conventional ones. Then, as the external quantum efficiency increases, the emission luminance also increases. Therefore, an organic EL device capable of converting triplet excitation energy into light emission is considered to occupy a large weight in future development as a technique for achieving high luminance light emission and high light emission efficiency.

[0010]

However, since both platinum and iridium are so-called noble metals, platinum and iridium complexes using them are also expensive.
It is expected that cost reduction will be adversely affected in the future. In addition, considering the effect of a metal complex containing a heavy metal on the human body, a material that is safer and easy to dispose of is desirable.

Therefore, it is desired to develop an organic EL device capable of converting triplet excitation energy into light emission (ie, emitting phosphorescence) without using an existing iridium complex or platinum complex. The simplest method is to develop a new organic compound that emits phosphorescence at room temperature at low cost, but a clear molecular design policy has not yet been established and there are many difficult aspects. .

Therefore, it is important to develop a new phosphorescent material, but there is a situation in which it is desirable to design a device configuration that promotes phosphorescent emission for the organic EL material.

Further, the organic EL device capable of converting triplet excitation energy into light emission as described in Documents 2 and 3 has a problem in device life, and the half-life of luminance has not reached a level that can be used for practical use. . According to the example reported in Reference 3,
The half-life of luminance when the initial luminance is set to 500 cd / m ² is
About 170 hours.

Even if high luminance light emission and high light emission efficiency are achieved, the element life is an extremely important issue for practical use. Therefore, it can be said that an element configuration that is effective for stabilizing the element is desirable as much as possible.

[0015] From the above, it is an object of the present invention to achieve an organic EL device capable of converting triplet excitation energy into light emission by devising the device structure while using a conventionally used organic compound. I do. It is another object of the present invention to provide an organic EL device which has high luminous efficiency, can be manufactured at low cost using a conventional organic compound, and can be driven as stably as possible.

Another object of the present invention is to provide a light-emitting device which is bright and consumes less power by using the organic EL element disclosed by the present invention at low cost. Further, it is another object to provide an inexpensive electric appliance which is bright and consumes less power by using such a light emitting device.

[0017]

Means for Solving the Problems The present inventor focused on a heavy atom effect known in the field of photoluminescence (hereinafter, referred to as "PL"). The heavy atom effect means that the spin-orbit interaction is increased by introducing a heavy atom into the molecule of the light emitting substance or by causing the heavy atom to exist in a surrounding environment such as a solvent in which the light emitting substance is dissolved, Intersection crossing that is a forbidden transition (S ^* →
T ^* ) and phosphorescence (T ^* → S ₀ ) are promoted. Here, a heavy atom refers to an atom having a large nuclear load (corresponding to an atomic number, that is, a number of positive charges of a nuclear nucleus).

There are two types of heavy atom effects, an internal heavy atom effect and an external heavy atom effect. The internal heavy atom effect means that phosphorescence is promoted when a heavy atom is contained in a molecule of a light-emitting substance. An iridium complex or a platinum complex can be said to be an example utilizing this internal heavy atom effect. In contrast,
Even when heavy atoms are present in the solvent in which the luminescent substance is dissolved, promotion of phosphorescent emission of the luminescent substance may be observed, and this phenomenon is called an external heavy atom effect.

The present inventor has proposed that this external heavy atom effect
We have devised a method of developing the device. That is, a phosphorescent emission is promoted by allowing a material containing a heavy atom to exist near the light emitting portion.

However, it is considered that a method of simply dispersing a material containing heavy atoms in an organic compound layer is unlikely to function as an organic EL element. For example, when an alkali metal (such as cesium) is doped into an organic compound layer among metals, the doped layer has improved conductivity and can exhibit an excellent function as a carrier transport layer. However, since the doped metal becomes a material that deactivates the excitation energy to prevent light emission (hereinafter, referred to as “quencher”), the metal-doped layer does not emit light as described above. Therefore, it is usually difficult to use it as a light emitting layer.

In the present invention, in order to solve this,
It is characterized by impregnating or contacting a material of an organic compound layer (hereinafter referred to as “organic EL material”) with a porous metal oxide. There are various types of metal oxides, but physical properties include many insulators, which are generally considered to be unlikely to become quenchers. In addition, it was considered that an external heavy atom effect can be exhibited by using a porous body instead of a dense material and by allowing an organic EL material (particularly, a portion to be a light emitting layer) to be present in the porous body.

Here, there are three methods for forming the porous metal oxide.

In the first method, in the process of manufacturing an organic EL element, first, a metal film to be an electrode (either an anode or a cathode) is formed, and the surface of the metal is subjected to anodizing treatment to thereby form an electrode surface. This is a technique for forming a porous metal oxide.
Therefore, in the present invention, in a light emitting device using an organic EL element comprising an anode layer, a cathode layer, and an organic compound layer provided between the anode layer and the cathode layer, the anode layer or the cathode layer At least one of them has an oxide film formed by anodizing treatment, and the oxide film is in contact with the organic compound layer.

In the second method, an electrode is formed in the same manner as in the first method, and a metal oxide porous body containing the same kind of metal element as the electrode material is formed thereon by using a sol-gel method. Method. Therefore, in the present invention, in a light emitting device using an organic EL element comprising an anode layer, a cathode layer, and an organic compound layer provided between the anode layer and the cathode layer, the anode layer or the cathode layer A metal oxide layer formed by a sol-gel method is provided between at least one of the organic compound layers and the organic compound layer.

The third technique is a technique using a porous material such as zeolite. Therefore, according to the present invention, in a light emitting device using an organic EL element including an anode layer, a cathode layer, and an organic compound layer provided between the anode layer and the cathode layer, the organic compound layer is formed of zeolite. Or is in contact with zeolite.

Although it is considered that most metal atoms can cause a more or less heavy atom effect, in the field of PL, especially bromine (Br; atomic number 35)
The heavy atom effect is remarkably observed when the atoms having the above weights are included. Therefore, in any of the methods, as the metal element contained in the porous metal oxide, rubidium (R
b; a metal element having an atomic number larger than that of atomic number 37) is preferable.

[0027] Of the above three methods, particularly when using an anodic oxidation treatment or when using a sol-gel method, the porous metal oxide is formed as a film on the electrode, and the electrode material and It is formed continuously (inclined). In the case of such a structure, it is expected that a more uniform electric field can be applied as compared with an element having an electrode having some irregular irregularities.

It is considered that this can prevent local concentration of the electric field, thereby suppressing dielectric breakdown and deterioration of the material. Therefore, the device structure disclosed in the present invention may lead to a longer life of the device. It can be said that one of the major features of the present invention is that the effect of improving the driving stability of the element can be expected.

For the above reasons, by implementing the present invention, it is possible to provide an organic EL device which has high luminous efficiency, can be manufactured at low cost using a conventional organic compound, and can be driven as stably as possible. it can.

[0030]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS First, a method using an anodizing treatment will be described. Anodization is a technique in which a metal is used as an anode and a voltage is applied in an appropriate electrolytic solution to form an oxide film on the metal surface. The thickness of the oxide film is given by the following equation.

[0031]

(Equation 1)

Here, d is the thickness of the oxide film, M is the molecular weight of the oxide film, and z is the total valence of the metal in the oxide film (for example, Al ₂ O ₃
Then, trivalent × 2 = 6valent), F is Faraday constant, ρ is density, I is current density, and t is time.

Looking at equation (1), F is a constant, and M,
Since z and ρ are values specific to the substance, the thickness of the oxide film is determined by the amount of passing electricity and time. Therefore,
By properly setting the voltage and the voltage application time, an oxide film can be formed with good reproducibility. However, care must be taken because the structure of the oxide film differs depending on the type of the electrolytic solution used.

When a neutral solution such as borate or tartrate is used as the electrolytic solution, a barrier oxide film, that is, an oxide film which is not porous, is formed. At this time, the oxide film grows without dissolving, and the resistance increases as the oxide film grows. Therefore, when a constant voltage is applied, current gradually stops flowing, and the growth of the film is almost saturated. Therefore, the oxide film thickness is determined by the initial voltage (that is, an oxide film is formed as a function of the applied voltage).

However, in this case, since the barrier oxide film is relatively dense, it is not suitable for impregnating the porous metal oxide with the organic EL material.

However, in a weakly acidic solution such as sulfuric acid, phosphoric acid, oxalic acid, and chromic acid having an appropriate dissolving power, a metal film 101 formed on a substrate 100 as shown in FIG. When anodizing is performed, a porous oxide film having a structure as shown in FIG. 1B is generated. The oxide film 102 is an aggregate of cells 104 having pores 103 perpendicular to the metal film 101, and is formed by a porous layer 102a and a semicircular barrier layer 102b present at the bottom of the pores 103. .

Here, when anodic oxidation is performed at a constant voltage, a voltage is applied to the barrier layer 102b, so that an oxide film is formed and dissolved in the barrier layer 102b at the same time. in this case,
The barrier layer 102b advances in the thickness direction of the coating with the voltage application time while keeping its thickness constant. That is, the thickness of the porous layer 102a increases with the voltage application time (dissolution proceeds).

That is, the thickness of the barrier layer 102b can be determined by the applied voltage, and the thickness of the porous layer 102a is determined by the voltage application time. The barrier layer 102b can be controlled on the order of several millimeters, and the porous layer 102a can be controlled on the order of tens of nm.

Considering application to an organic EL device, when the barrier layer 102b exceeds a few nm or the porous layer 102a exceeds the thickness of the organic compound layer (100 to 200 nm), the driving voltage of the device is reduced. May be high. However, the porous oxide film formed by anodic oxidation clears these problems and can be said to be suitable for the present invention.

As the anode layer of the organic EL element, a metal having a large work function is used in order to improve the hole injection property. As a group of materials having a large work function and relatively easy anodic oxidation, metals belonging to Groups 4 to 6 of the periodic table can be considered. In particular, titanium, tantalum, and tungsten are preferable from the viewpoint of film forming properties and work function.

Conversely, a metal having a small work function is used for the cathode layer of the organic EL element in order to improve the electron injection property. In this case, first, a cathode layer is formed, and then an anodizing treatment is performed to form an organic compound layer (that is, an element manufacturing process for manufacturing from the cathode layer side). Such a case is also included in the present invention.

Next, a method using the sol-gel method will be described. The sol-gel method is a kind of liquid phase reaction, and utilizes a reaction in which molecules are polymerized by a polymerization reaction in a solution, and the polymer particles solidify from a sol to a gel. In particular, it is used for forming a metal oxide, and can also form a porous body. The sol can be easily formed into a thin film by a known method such as spin coating or dip coating, and is suitable for the present invention in this respect.

The sol-gel method usually comprises a metal alkoxide;
M (OR) _x (M is a metal, OR is an alkoxy group, and x is an integer equal to the valence of M) is used as a raw material. The basic process is to convert the metal alkoxide into a stable sol by hydrolysis or the like, coat it on a substrate, dry and bake.

For example, when SiO _{2 is formed} by a sol-gel method using alkoxysilane; Si (OR) ₄ ,
By hydrolyzing R) ₄ with a weakly acidic solution, the following reaction occurs. The oligomer having a small amount of hydroxyl group generated by this reaction forms a stable sol.

[0045]

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The sol is formed on a substrate by spin coating or the like, and is repeatedly dried and fired.
An SiO ₂ thin film is obtained. Other techniques for forming a metal oxide can also be achieved basically by a sol-gel method from a metal alkoxide.

Although this method is sufficiently effective also in the present invention, it has one problem. That is the control of the film thickness. The thickness of the organic compound layer is on the order of 100 to 200 nm, and that of the light emitting layer is on the order of several tens of nanometers. It is possible by finding the optimal conditions.)

Therefore, in the present invention, it is more preferable to use the surface sol-gel method. The surface sol-gel method is a method of growing an inorganic thin film based on a dehydration polymerization reaction between substances. FIG. 2 illustrates the process.

First, the surface of the metal 201 is subjected to a hydrophilic treatment so as to have a hydroxyl group 202a (FIG. 2A). Next, a metal alkoxide 203 (M is a metal) containing a metal element of the same kind as the metal 201 is chemically adsorbed on the metal having a hydroxyl group (FIG. 2B). Finally, by hydrolyzing the surface on which the metal alkoxide is chemically adsorbed, the hydroxyl group
202b (Fig. 2 (c)). Fig. 2 (b) → Fig. 2 (c)
By repeating the above operation, an arbitrary film thickness can be obtained, but since the film thickness obtained in one cycle is several nm, it can be said that the film thickness is suitable for the present invention.

In addition to the above-mentioned surface sol-gel method, there is a preferable film forming method. For example, the metal alkoxide and the constituent material of the organic compound layer are dissolved in the same solvent in advance, and the solution is coated on an electrode, and then subjected to hydrolysis and heat treatment. Can easily be formed.

The above method has an advantage that the organic compound layer (or a part of the organic compound layer) and the metal oxide porous body can be formed simultaneously. In addition, since a solution containing a metal alkoxide and a constituent material of the organic compound layer may be coated on the electrode, control of the film thickness is relatively easy.

It is considered that a metal having a large work function (Groups 4 to 6 of the periodic table) is effective as the anode layer of the organic EL element in order to improve the hole injection property. In the embodiment of the present invention, the metal oxide porous body containing the same kind of metal element as the electrode material is formed using the sol-gel method, so that the metal oxide porous body is provided between the anode layer and the organic compound layer. Is provided, the metal element contained in the metal oxide porous body is preferably a metal element belonging to Groups 4 to 6 of the periodic table. In particular, titanium, tantalum, and tungsten are preferable from the viewpoint of film forming properties and work function.

Conversely, a metal having a small work function is used for the cathode layer of the organic EL element in order to improve the electron injection property. In this case, first, a cathode layer is formed, a metal oxide porous body having the same metal element as the cathode layer is formed by a sol-gel method, and an organic compound layer is formed (that is, the cathode layer is formed). This is an element manufacturing process of manufacturing from the layer side). Such a case is also included in the present invention.

Finally, a method using zeolite will be described. Zeolite has silicon and aluminum atoms because it has a skeleton of silica and alumina. However, usually, it also contains atoms such as alkali metals and alkaline earth metals, and in some cases metal atoms such as thallium and silver (hereinafter simply referred to as "cationic metal").
Described). Since this cation metal can be replaced, a heavy atom effect can be expected by introducing a heavy atom into the cation metal site.

Although the device configuration uses zeolite, it can be roughly divided into two types of methods. One is a method in which an ultrafine zeolite powder (（1 μm) is prepared and dispersed in a material constituting an organic compound layer.

However, usually, the thickness of the organic compound layer is 100 nm to 200 nm, and it is somewhat difficult to obtain a fine zeolite powder having a particle size smaller than this thickness. Therefore, in this case, conversely, it is desirable that the thickness of the organic compound layer be equal to or larger than the particle size of the zeolite (1 μm or larger).

When the thickness of the organic compound layer is set to about 1 μm, it is expected that the driving voltage will increase. One way to overcome this is to dope the charge transport layer. By doping the charge transporting layer (Lewis base for the electron transporting layer and Lewis acid for the hole transporting layer), the electrical conductivity is improved to a level comparable to that of a semiconductor. Even when the thickness is about 1 μm, the driving voltage does not increase.

Substrate 301a in which fine zeolite powder 303a is dispersed
And a doped hole transport layer on the anode layer 302a
304a, light emitting layer 305a, doped electron transport layer 306
FIG. 3A shows an example in which a and the cathode layer 307a are stacked. In consideration of preventing the elimination of zeolite, dip coating is preferred. In this case, “(film thickness of hole transport layer) <
(Zeolite particle size) <(Total film thickness of hole transport layer + light emitting layer + electron transport layer)
The light-emitting layer is contained in the zeolite, and the organic compound layer exceeds the particle size of the zeolite.

Another method of forming a device using zeolite is thinning. As a well-known method for synthesizing zeolites, there is a method of mixing a cationic metal aluminate and a silicate and heating the mixture at about 100 ° C to 200 ° C.

Therefore, a zeolite film may be formed on a substrate having electrodes in advance by the above-described method, and then an organic compound layer may be formed. FIG. 3B shows an example in which such an element is formed on a substrate 301b having an anode layer 302b. If the zeolite film 303b cannot be formed thinner than the normal organic compound layer thickness (100 to 200 nm), FIG.
As in (a), on the doped hole transport layer 304b,
The light emitting layer 305b, the doped electron transport layer 306b, and the cathode layer 307b may have a stacked structure.

When the particle size of the zeolite fine particles or the film thickness of the zeolite membrane can be controlled to about 100 to 200 nm, it is not necessary to use the charge transport layer doped as described above. Thick organic compound layer (100-200
nm).

Although the cation metal of the zeolite can be substituted as described above, it is generally easy to apply an alkali metal or an alkaline earth metal. In particular, it is preferable to use rubidium, strontium, cesium, or barium as the cation metal from the viewpoint of the heavy atom effect.

Although the procedure for sequentially forming a film from the anode layer side has been described here, a method of forming a cathode layer first, and then forming an organic compound layer and an anode layer may be used.

[0064]

[Example 1] In this example, a device in which a porous oxide film is formed by using anodic oxidation as shown in FIG. 1 in the embodiment of the present invention will be specifically exemplified. Here, a method of forming a pixel electrode using tantalum (Ta), performing anodic oxidation using the pixel electrode as an anode, and forming a film from the anode layer side is exemplified. FIG. 4 shows the element structure.

First, Ta is formed on a glass substrate 401 by sputtering to form an anode layer 402. The Ta film formed at this time needs a sufficient thickness (厚 み 1 μm) because the surface becomes an oxide film by the anodic oxidation treatment described below.

Next, a film was formed in an oxalic acid solution.
An anodic oxidation process using Ta as an anode is performed to form an oxide film 403. The oxide film 403 is divided into a porous layer 403a having pores perpendicular to the film surface and a barrier layer 403b having relatively few pores. The thickness of the barrier layer 403b is adjusted by the voltage. The porous layer 403a is about 50 to 60 nm, the barrier layer 403b is 1
About 2 nm is desirable. Further, the barrier layer 403b needs to be suppressed to several nm or less at the maximum.

Further, in forming an organic compound layer, a polyparaphenylene vinylene derivative (hereinafter, referred to as “PPV derivative”) represented by the following chemical formula (2) is used as the light emitting layer 404, and the electron transport layer 405 is used. Is used as bathocuproin (hereinafter, referred to as “BCP”) represented by the following formula (3).

[0068]

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[0069]

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The light emitting layer 404 is formed by spin coating or dip coating a PPV derivative solution in which a PPV derivative is dissolved in toluene. After coating, the solvent toluene is removed by performing a heat treatment at 80 ° C.

In the case of this embodiment, considering the formation of the electron transport layer 405, the thickness of the light emitting layer 404 needs to be greater than the thickness of the porous layer 403a (that is, the light emitting layer 404 and the electron transport layer 4).
The thickness d in FIG. 4 is necessary for 05 to be in contact with the entire film surface). Although precise control of the thickness d in FIG. 4 is difficult, control of about 10 to 20 nm is sufficiently possible by adjusting the concentration of the solution and the number of revolutions of spin coating. When a sufficient film thickness cannot be obtained by one coating, coating may be performed in several times.

After forming the light emitting layer 404, an electron transport layer 405 is formed. In this embodiment, the electron transport layer 405 is formed by vacuum-depositing BCP. The thickness is 30 nm.

Finally, as the cathode layer 406, an Al: Li alloy (Li is
5 wt%) by vacuum evaporation. In the case of this embodiment, since the cathode layer 406 serves as a light extraction surface, it is necessary to form an ultrathin film of about 20 nm. When the anode layer 402 serves as a light extraction surface, it is necessary to form an ultrathin film of about 20 nm.

Example 2 In this example, an element in which a porous metal oxide body is formed by using a sol-gel method as shown in FIG. 2 in the embodiment of the present invention will be specifically exemplified. In the case of the sol-gel method, a metal oxide porous body is formed separately from the electrode, so that Ta or indium tin oxide (IT
A pixel electrode is formed using O). Here, a method of forming a film from the anode layer side using tantalum (Ta) as the anode layer will be exemplified. FIG. 5 shows the element structure.

First, a film of Ta is formed on a glass substrate 501 by sputtering to form an anode layer 502. The Ta film formed in this embodiment has a thickness enough to function as an electrode (specifically,
About 100 nm).

Next, an oxide porous layer 503 is formed on the anode layer 502.
(Ta ₂ O ₅ in this embodiment) is formed by a surface sol-gel method. As a raw material, penta-n-propoxy tantalum (Ta (OnC ₃ H ₇ ) ₅ ; liquid at normal temperature) is used. First, the anode layer 502 previously subjected to hydrophilic treatment is immersed in a toluene / ethanol solution of penta-n-propoxytantalum for 3 minutes. Next, after rinsing with an ethanol solution, hydrolysis is performed using pure water, so that the surface of the metal alkoxide has a hydroxyl group.

With respect to the formation of the porous oxide layer 503, the above-described steps are regarded as one cycle, but if a larger film thickness is to be obtained, this cycle may be repeated. Finally, pure water is removed by a drying / heating treatment to obtain an oxide (in this embodiment, tantalum oxide) porous layer 503. In this embodiment, it is desirable that the film thickness is finally about 50 to 60 nm.

In the formation of an organic compound layer, a PPV derivative represented by the chemical formula (2) is used as the light emitting layer 504, and a BCP represented by the chemical formula (3) is used as the electron transport layer 505.

The light emitting layer 504 is formed by spin coating or dip coating a PPV derivative solution in which a PPV derivative is dissolved in toluene. After coating, toluene as a solvent is removed by performing a heat treatment at 80 ° C. to form a light-emitting layer 504.

In this embodiment, the thickness of the light emitting layer 504 needs to be greater than the thickness of the porous oxide layer 503 in consideration of the formation of the electron transport layer 505 (that is, the light emitting layer 504 and the electron transport layer 505). Is necessary in order to make contact on the entire film surface). Although precise control of the thickness d in FIG. 5 is difficult, control of about 10 to 20 nm is sufficiently possible by adjusting the concentration of the solution and the number of revolutions of the spin coating. When a sufficient film thickness cannot be obtained by one coating, coating may be performed in several times.

After forming the light emitting layer 504, an electron transport layer 505 is formed. In this embodiment, the electron transport layer 505 is formed by vacuum-depositing BCP. After coating, moisture is removed by heat treatment. The thickness is 30 nm.

Finally, as the cathode layer 506, an Al: Li alloy (Li is
5 wt%) by evaporation. In the case of this embodiment, the cathode layer
Since 506 serves as a light extraction surface, an ultrathin film of about 20 nm needs to be formed. In the first and second embodiments, the case where the metal oxide porous body is formed is shown. However, a metal oxide thin film may be formed. In this case, the film thickness needs to be about 5 nm.

[Example 3] In this example, an element in which zeolite is introduced as a porous metal oxide as shown in FIG. 3 in the embodiment of the present invention will be specifically exemplified. When zeolite is used, a metal oxide porous body is formed separately from the electrode. Here, a method of manufacturing an organic EL element in which a film is formed from a transparent electrode (anode) side which is a pixel electrode is exemplified. FIG. 6 shows the element structure.

First, indium tin oxide (ITO), which is a transparent electrode, is formed as a positive electrode layer 602 on a substrate 601 by sputtering. Further, an aqueous solution of sodium silicate and sodium aluminate was coated thereon, and heated at 100 ° C. for 6 hours to form zeolite X.
(Cation metal is sodium) to form a film (zeolite film 603).

Next, considering phosphorescence promotion by the heavy atom effect,
The cation metal of zeolite X is converted from sodium to cesium. This cation conversion is
This can be achieved by immersing the substrate on which X is formed at 90 ° C. in a cesium nitrate aqueous solution (concentration: 10%). This impregnation operation needs to be repeated several times.

As described above, after introducing cesium atoms into zeolite, an organic compound layer is formed. First, the hole injection layer
As 604, an aqueous solution obtained by mixing polyethylene dioxythiophene (hereinafter, referred to as “PEDOT”) represented by the following chemical formula (4) with polystyrene sulfonic acid (hereinafter, referred to as “PSS”) is formed by spin coating. (Hereinafter, this solution is referred to as “PEDOT / PSS”). After film formation, moisture is removed by heating to form a hole-injection layer 604. Since the hole injection layer 604 needs to have a film thickness (up to several hundred nm) close to the zeolite film, it is desirable to perform spin coating several times. In such a case, it is necessary to remove the moisture by performing a heat treatment each time the spin coating is performed once, instead of performing the spin coating continuously (to prevent the elution of the already formed film).

[0087]

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Next, a toluene solution of the PPV derivative represented by the chemical formula (2) is formed into a film by spin coating, and the solvent is removed to form the light emitting layer 605. In this embodiment, since the electron transport layer is not used, it is necessary to form a film so as to exceed the thickness of the zeolite film at this time. Emitting layer
It is desirable to adjust the thickness of 605 to be 100 nm to 200 nm.

The cathode layer 606 is formed on the organic compound layer formed as described above. As the cathode 606, a metal having a small work function is applied, and is generally an alkali metal or an alkaline earth metal, or an alloy containing them. In addition, a rare earth metal such as ytterbium can be used as the cathode layer 606. As a film forming method,
Vacuum deposition is common. In this embodiment, ytterbium is formed to a thickness of 400 nm by vacuum evaporation.

[Embodiment 4] In this embodiment, a light emitting device including the organic EL element disclosed in the present invention will be described. FIG.
1 is a cross-sectional view of an active matrix light emitting device using the organic EL element of the present invention. Although a thin film transistor (hereinafter, referred to as “TFT”) is used here as an active element, a MOS transistor may be used.

Further, a top gate type TFT (specifically, a planar type TFT) is exemplified as the TFT, but a bottom gate type TFT is shown.
An FT (typically an inverted staggered TFT) can also be used.

In FIG. 7, reference numeral 701 denotes a substrate. Here, a substrate that transmits visible light is used. Specifically, a glass substrate, a quartz substrate, a crystallized glass substrate, or a plastic substrate (including a plastic film) may be used. Note that the substrate 701 includes an insulating film provided on the surface of the substrate.

On the substrate 701, a pixel portion 711 and a driving circuit
712 are provided. First, the pixel portion 711 will be described.

The pixel section 711 is an area for displaying an image.
It has a plurality of pixels, and each pixel has a TFT for controlling the current flowing through the organic EL element (hereinafter referred to as “current control TFT”)
702, a pixel electrode (anode layer) 703, an organic compound layer 704, and a cathode layer 705 are provided. In FIG. 7, the current control T
Although only the FT is shown, a TFT for controlling the voltage applied to the gate of the current control TFT (hereinafter referred to as “switching TF”)
T ”).

The current control TFT 702 is a p-channel type T
Preferably, FT is used. Although it is possible to use an n-channel TFT, when a current control TFT is connected to the anode of the organic EL element as shown in FIG. 7, a p-channel TFT can reduce power consumption. However, switching TF
T may be an n-channel TFT or a p-channel TFT.

The pixel electrode 703 is electrically connected to the drain of the current control TFT 702. In this embodiment, a conductive material having a work function of 4.5 eV to 5.5 eV is used as a material of the pixel electrode 703, so that the pixel electrode 703 functions as an anode of the organic EL element. As the pixel electrode 703, typically, indium oxide, tin oxide, zinc oxide, or a compound thereof (ITO or the like) may be used. An organic compound layer 704 is provided over the pixel electrode 703. Although not shown, Examples 1 to 3 were provided between the pixel electrode and the organic compound layer.
A thin film of a porous metal oxide as shown in 3 is provided.

Further, the cathode layer 7 is formed on the organic compound layer 704.
05 is provided. As a material of the cathode layer 705, a conductive material having a work function of 2.5 to 3.5 eV is used. As the cathode layer 705, typically, a conductive film containing an alkali metal element or an alkaline earth metal element, or a layer in which an aluminum alloy is stacked on the conductive film may be used.

The layer including the pixel electrode 703, the organic compound layer 704, and the cathode layer 705 is covered with a protective film 706. The protective film 706 is provided to protect the organic EL element from oxygen and water. As a material of the protective film 706, silicon nitride, silicon nitride oxide, aluminum oxide, tantalum oxide, or carbon (specifically, diamond-like carbon) is used.

Next, the drive circuit 712 will be described. The driver circuit 712 is a region that controls the timing of signals (gate signals and data signals) transmitted to the pixel portion 711,
A shift register, a buffer, a latch, an analog switch (transfer gate), or a level shifter is provided. In FIG. 7, n is a basic unit of these circuits.
CMO consisting of channel TFT707 and p-channel TFT708
The S circuit is shown.

The circuit configuration of the shift register, buffer, latch, analog switch (transfer gate) or level shifter may be a known one. Although the pixel portion 711 and the driver circuit 712 are provided over the same substrate in FIG. 7, an IC or an LSI can be electrically connected without providing the driver circuit 712.

Although the pixel electrode (anode layer) 703 is electrically connected to the current control TFT 702 in FIG. 7, a structure in which the cathode layer is connected to the current control TFT may be adopted. In that case, the pixel electrode is formed of the same material as the cathode layer 705,
The cathode may be formed using the same material as the pixel electrode (anode layer) 703. In that case, the current control TFT is preferably an n-channel TFT.

Here, FIG. 8 shows the appearance of the active matrix type light emitting device shown in FIG. 8A shows a top view, and FIG. 8B shows a cross-sectional view of FIG. 8A taken along the line PP ′. Also, reference is made to the reference numerals in FIG.

In FIG. 8A, reference numeral 801 denotes a pixel portion, 802 denotes a gate signal side drive circuit, and 803 denotes a data signal side drive circuit. Further, signals transmitted to the gate signal side driving circuit 802 and the data signal side driving circuit 803 are input from a TAB (Tape Automated Bonding) tape 805 via an input wiring 804. Although not shown, instead of the TAB tape 805,
TCP (Tape Carrier) with IC (Integrated Circuit) on TAB tape
Package).

At this time, reference numeral 806 denotes a cover material provided above the organic EL element shown in FIG. 7, and is adhered by a sealing material 807 made of resin. As the cover material 806, any material may be used as long as the material does not transmit oxygen and water. In this embodiment, as shown in FIG. 8B, the cover material 806 is made of a plastic material 806a and the plastic material 806a.
And carbon films (specifically, diamond-like carbon films) 806b and 806c provided on the front surface and the back surface, respectively.

Further, as shown in FIG.
Numeral 07 is covered with a sealing material 808 made of resin so that the organic EL element is completely enclosed in the sealed space 809. The sealed space 809 is an inert gas (typically nitrogen gas or a rare gas),
A resin or an inert liquid (for example, liquid fluorinated carbon represented by perfluoroalkane) may be filled. Further, it is also effective to provide a moisture absorbent or a deoxidizer.

Further, a polarizing plate may be provided on the display surface (surface for observing an image) of the light emitting device shown in this embodiment. This polarizing plate has an effect of suppressing reflection of light incident from the outside and preventing an observer from being reflected on the display surface. Generally, a circularly polarizing plate is used. However, in order to prevent the light emitted from the organic compound layer from being reflected by the polarizing plate and returning to the inside, it is preferable to adjust the refractive index to have a structure with less internal reflection.

The organic light emitting device included in the light emitting device of this embodiment
As the EL element, any of the organic EL elements disclosed in the present invention may be used.

[Embodiment 5] In this embodiment, a passive matrix light emitting device will be described as an example of a light emitting device including the organic EL element disclosed in the present invention. FIG. 9A shows a top view thereof, and FIG. 9B shows a cross-sectional view of FIG. 9A taken along a line PP ′.

In FIG. 9A, reference numeral 901 denotes a substrate, which is made of a plastic material. Plastic materials include polyimide, polyamide, acrylic resin, epoxy resin, PES (polyethersulfone), PC (polycarbonate), PET (polyethylene terephthalate) or PEN (polyethernitrile) in plate or film form. Can be used.

Reference numeral 902 denotes a scanning line (anode layer) made of an oxide conductive film. In this embodiment, an oxide conductive film obtained by adding gallium oxide to zinc oxide is used. Reference numeral 903 denotes a data line (cathode layer) made of a metal film. In this embodiment, an Al: Li alloy film is used. Reference numeral 904 denotes a bank made of an acrylic resin, which functions as a partition for dividing the data line 903. Each of the scanning lines 902 and the data lines 903 is formed in a plurality of stripes, and is provided to be orthogonal to each other. Although not shown in FIG. 9A, an organic compound layer is interposed between the scanning line 902 and the data line 903, and the intersection 905 becomes a pixel.

The scanning line 902 and the data line 903 are TA
It is connected to an external drive circuit via a B tape 907. Note that reference numeral 908 denotes a wiring group including the scanning lines 902, and reference numeral 909 denotes a wiring group including a set of connection wirings 906 connected to the data lines 903. Although not shown, TAB
Instead of the tape 907, a TCP provided with an IC may be connected to a TAB tape.

In FIG. 9B, reference numeral 910 denotes a sealing material;
Reference numeral 911 denotes a cover material bonded to the plastic substrate 901 by a seal material 910. As the sealant 910, a light-curing resin may be used, and a material which has little degassing and low hygroscopicity is preferable. As the cover material, the same material as that of the substrate 901 is preferable, and glass (including quartz glass) or plastic can be used. Here, a plastic material is used.

Next, an enlarged view of the structure of the pixel area is shown in FIG.
Shown in 913 is an organic compound layer. Note that, as shown in FIG. 9C, the width of the lower layer of the bank 904 is smaller than the width of the upper layer, and the data line 903 can be physically divided. Further, the pixel portion 914 surrounded by the sealing material 910 is shielded from the outside air by a sealing material 915 made of a resin, and has a structure to prevent deterioration of the organic compound layer.

In the light emitting device of the present invention having the above configuration, the pixel portion 914 includes the scanning line 902, the data line 903, and the bank 904.
Since it is formed with the organic compound layer 913, it can be manufactured by a very simple process.

Further, a polarizing plate may be provided on the display surface (surface on which an image is observed) of the light emitting device shown in this embodiment. This polarizing plate has an effect of suppressing reflection of light incident from the outside and preventing an observer from being reflected on the display surface. Generally, a circularly polarizing plate is used. However, in order to prevent the light emitted from the organic compound layer from being reflected by the polarizing plate and returning to the inside, it is preferable to adjust the refractive index to have a structure with less internal reflection.

Note that the organic light-emitting device of this embodiment
As the EL element, any of the organic EL elements disclosed in the present invention may be used.

[Embodiment 6] In this embodiment, an example in which a printed wiring board is provided in the light emitting device shown in Embodiment 5 to make a module will be described.

The module shown in FIG.
(Here, the pixel portion 1011 and the wirings 1012a and 1012b are included)
A TAB tape 1013 is attached to the substrate, and a printed wiring board 1014 is attached via the TAB tape 1013.

Here, a functional block diagram of the printed wiring board 1014 is shown in FIG. At least I / O ports (input or output unit) 1015 inside the printed wiring board 1014,
An IC functioning as 1018, a data signal side driver circuit 1016, and a gate signal side circuit 1017 is provided.

As described above, a module having a configuration in which the TAB tape is attached to the substrate on which the pixel portion is formed on the substrate surface, and the printed wiring board having a function as a driving circuit is attached via the TAB tape, In the specification, the module will be referred to as a drive circuit external type module.

The organic light emitting device included in the light emitting device of this embodiment
As the EL element, any of the organic EL elements disclosed in the present invention may be used.

[Embodiment 7] In this embodiment, an example in which a printed wiring board is provided on the light emitting device shown in Embodiment 4 or 5 to form a module will be described.

The module shown in FIG.
(Here, the pixel portion 1101, the data signal side driving circuit 1102,
The TAB tape 1104 is attached to the gate signal side drive circuit 1103 and the wirings 1102a and 1103a).
The printed wiring board 1105 is attached via the “04”.
FIG. 11B shows a functional block diagram of the printed wiring board 1105.

As shown in FIG. 11B, the printed wiring board 1
An IC that functions as at least the I / O ports 1616 and 1619 and the control unit 1617 is provided inside the 105. Although the memory unit 1618 is provided here, it is not always necessary. The control unit 1617 is a part having a function for controlling a drive circuit, correcting image data, and the like.

A module having a configuration in which a printed wiring board having a function as a controller is mounted on a substrate on which an organic EL element is formed as described above is particularly referred to as a controller external type module in this specification.

Note that the organic light-emitting device included in the light-emitting device of this embodiment is
As the EL element, any of the organic EL elements disclosed in the present invention may be used.

[Embodiment 8] The light emitting device of the present invention described in the above embodiment has an advantage that it is bright and consumes low power. Therefore, an electric appliance that includes the light emitting device as a display unit or the like is an electric appliance that can operate with lower power consumption than before. In particular, an electric appliance such as a portable device using a battery as a power source is extremely useful because low power consumption is directly linked to convenience (the battery is hard to run out).

Since the light emitting device is of a self-luminous type, it does not require a backlight unlike a liquid crystal display device.
Since the thickness of the organic compound layer is less than 1 μm, the thickness and weight can be reduced. Therefore, an electric appliance including the light emitting device as a display unit or the like is a thinner and lighter electric appliance than before. This is also extremely useful, particularly for electric appliances such as portable devices, because it is directly connected to convenience (lightness and compactness when carrying). Furthermore, it is undoubted that the thinness (not bulky) of electric appliances in general is also useful from the viewpoint of transportation (mass transportation is possible) and installation (securing space such as rooms).

Since the light-emitting device is of a self-luminous type, it has a feature that it has better visibility in a bright place than a liquid crystal display device and has a wide viewing angle. Therefore, an electric appliance having the light-emitting device as a display portion has a great advantage in viewability of display.

[0130] In this embodiment, an electric appliance including the light emitting device of the present invention as a display portion will be described. Specific examples are shown in FIGS. Note that any of the structures shown in FIGS. 4 to 6 may be used for the organic EL element included in the electric appliance of this embodiment. The form of the light emitting device included in the electric appliance of this embodiment may be any of the forms shown in FIGS.

FIG. 12A shows an organic EL display.
It includes a housing 1201a, a support base 1202a, and a display portion 1203a. By manufacturing a display using the light-emitting device of the present invention as the display portion 1203a, a thin and lightweight display can be realized. Therefore, transportation is simplified, and further, space saving at the time of installation becomes possible.

FIG. 12B shows a video camera,
1b, display unit 1202b, voice input unit 1203b, operation switch 1204
b, a battery 1205b, and an image receiving unit 1206b. By manufacturing a video camera using the light-emitting device of the present invention as the display portion 1202b, a lightweight video camera with low power consumption can be realized. Therefore, battery consumption is reduced,
It is easy to carry.

FIG. 12C shows a digital camera,
201c, display unit 1202c, eyepiece unit 1203c, operation switch 1204c
including. By manufacturing a digital camera using the light-emitting device of the present invention as the display portion 1202c, a light-weight digital camera with low power consumption can be realized. Therefore, the consumption of the battery is reduced and the portability is simplified.

FIG. 12D shows an image reproducing apparatus provided with a recording medium, which includes a main body 1201d, a recording medium (CD, LD, or DVD) 1202d, operation switches 1203d, a display section (A) 1204d, and a display section ( B) Including 1205d. The display portion (A) 1204d mainly displays image information, and the display portion (B) 1205d mainly displays character information. The light-emitting device of the present invention is used for the display portion (A) 1204d and the display portion.
(B) By manufacturing the image reproducing apparatus used as 1205d, it is possible to realize the light-weight image reproducing apparatus with low power consumption. Note that the image reproducing device provided with the recording medium includes a CD reproducing device, a game machine, and the like.

FIG. 12E shows a portable (mobile) computer, which includes a main body 1201e, a display section 1202e, an image receiving section 1203e,
It includes an operation switch 1204e and a memory slot 1205e. By manufacturing a portable computer using the light-emitting device of the present invention as the display portion 1202e, a thin and lightweight portable computer with low power consumption can be realized. Therefore, the consumption of the battery is reduced and the portability is simplified. In addition,
This portable computer can record information on a recording medium in which a flash memory or a nonvolatile memory is integrated, and can reproduce the information.

FIG. 12F shows a personal computer, which includes a main body 1201f, a housing 1202f, a display section 1203f, and a keyboard 1
Includes 204f. By manufacturing a personal computer using the light-emitting device of the present invention as the display portion 1203f, a thin and lightweight personal computer with low power consumption can be realized. In particular, when a portable use such as a notebook computer is required, a great advantage is obtained in terms of battery consumption and lightness.

[0137] It is to be noted that the electric appliances often display information distributed through electronic communication lines such as the Internet or wireless communication such as radio waves, and in particular, opportunities to display moving image information are increasing. The response speed of the organic EL element is very fast, and is suitable for such moving image display.

Next, FIG. 13A shows a mobile phone, and the main body 1
301a, audio output unit 1302a, audio input unit 1303a, display unit 1304
a, an operation switch 1305a, and an antenna 1306a. By manufacturing a mobile phone using the light-emitting device of the present invention as the display portion 1304a, a thin and lightweight mobile phone with low power consumption can be realized. Therefore, battery consumption is reduced,
It is easy to carry and compact.

FIG. 13B shows an audio equipment (specifically, an audio for a vehicle), which includes a main body 1301b, a display unit 1302b, and operation switches 1303b and 1304b. Display unit of the light emitting device of the present invention
By manufacturing the audio device used as 1302b, a light-weight audio device with low power consumption can be realized. Also,
In this embodiment, the in-vehicle audio is shown as an example, but it may be used for home audio.

In the electric appliances shown in FIGS. 12 and 13, a light sensor is further incorporated, and a means for detecting the brightness of the use environment is provided. It is effective to have a function of modulating the frequency. If the user can secure a brightness of 100 to 150 in contrast ratio compared to the brightness of the usage environment,
Image or character information can be recognized without any problem. That is, when the use environment is bright, it is possible to increase the brightness of the image to make it easier to see, and when the use environment is dark, it is possible to suppress the brightness of the image and reduce power consumption.

Further, various electric appliances using the light emitting device of the present invention as a light source can be said to be very useful because they can operate with low power consumption and can be made thin and light. Typically,
An electric appliance including the light-emitting device of the present invention as a light source such as a backlight or a front light of a liquid crystal display device or a light source of a lighting device can realize low power consumption and can be thin and lightweight.

Therefore, even when the display portions of the electric appliances shown in FIGS. 12 and 13 shown in this embodiment are all liquid crystal displays, the light emitting device of the present invention is used as a backlight or front light of the liquid crystal display. By manufacturing the electric appliance, a thin and lightweight electric appliance with low power consumption can be achieved.

[0143]

According to the present invention, it is possible to obtain a light emitting device which is bright, consumes less power, and is excellent in cost. Furthermore, by using such a light-emitting device for a light source or a display portion, an inexpensive electric appliance can be obtained in addition to being bright and consuming less power.

[Brief description of the drawings]

FIG. 1 is a view showing a porous oxide film formed by anodic oxidation.

FIG. 2 is a diagram showing a mechanism of a surface sol-gel method.

FIG. 3 is a view showing an organic EL device using zeolite.

FIG. 4 is a diagram showing a structure of an organic EL element.

FIG. 5 is a diagram showing a structure of an organic EL element.

FIG. 6 is a diagram showing a structure of an organic EL element.

FIG. 7 illustrates a cross-sectional structure of a light-emitting device.

FIG. 8 illustrates a top structure and a cross-sectional structure of a light-emitting device.

FIG. 9 illustrates a top structure and a cross-sectional structure of a light-emitting device.

FIG. 10 illustrates a structure of a light-emitting device.

FIG. 11 illustrates a structure of a light-emitting device.

FIG. 12 illustrates a specific example of an electric appliance.

FIG. 13 illustrates a specific example of an electric appliance.

──────────────────────────────────────────────────の Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat ゛ (Reference) H05B 33/10 H05B 33/10 33/14 33/14 A 33/22 33/22 Z F term (Reference) 3K007 AB02 AB05 AB18 BA06 BB01 CA01 CB03 CB04 DA01 DB03 EB00 FA01 5C094 AA10 AA22 AA43 AA44 BA03 BA27 CA19 DA09 DA14 DB01 DB02 EA04 EB02 FA01 FA02 FB01 FB02 FB12 FB14 FB15 FB20 H10 BB11 A37 A37 A37 A37 A37 A37 A37 EB12 HB LL07 LL14

Claims (13)

[Claims] 1. A light emitting device using an organic EL element comprising an anode layer, a cathode layer, and an organic compound layer provided between the anode layer and the cathode layer, wherein the anode layer or the cathode layer is provided. At least one of the light emitting devices has an oxide film formed by anodizing treatment, and the oxide film is in contact with the organic compound layer. 2. A light emitting device using an organic EL element comprising an anode layer, a cathode layer, and an organic compound layer provided between the anode layer and the cathode layer, wherein the anode layer or the cathode layer At least one of them is made of a metal having an atomic number equal to or more than rubidium, and has an oxide film formed by anodizing treatment, and the oxide film is in contact with the organic compound layer. Light emitting device. 3. A light-emitting device using an organic EL element comprising an anode layer, a cathode layer, and an organic compound layer provided between the anode layer and the cathode layer, wherein the anode layer has a periodic table. A group consisting of at least one metal element selected from the group consisting of Group 4, Group 5, and Group 6; and
A light emitting device having an oxide film formed by anodizing treatment, wherein the oxide film is in contact with the organic compound layer. 4. The light emitting device according to claim 3, wherein said metal element is titanium, tantalum, or tungsten. 5. A light emitting device using an organic EL element comprising an anode layer, a cathode layer, and an organic compound layer provided between the anode layer and the cathode layer, wherein the anode layer or the cathode layer Wherein a metal oxide layer formed by a sol-gel method is provided between at least one of the organic compound layers and the organic compound layer. 6. A light emitting device using an organic EL element comprising an anode layer, a cathode layer, and an organic compound layer provided between the anode layer and the cathode layer, wherein the anode layer or the cathode layer A metal oxide layer formed by a sol-gel method is provided between at least one of the organic compound layers and the organic compound layer, wherein the metal oxide layer contains a metal element having an atomic number of rubidium or more. Light emitting device. 7. A light emitting device using an organic EL element comprising an anode layer, a cathode layer, and an organic compound layer provided between the anode layer and the cathode layer, wherein the anode layer and the organic compound A metal oxide layer formed by a sol-gel method is provided between the first and second layers, and the anode layer and the metal oxide layer are formed of a group consisting of Groups 4 to 5, and 6 of the periodic table. A light-emitting device comprising at least one metal element selected from the group consisting of: 8. The light emitting device according to claim 7, wherein said metal element is titanium, tantalum, or tungsten. 9. A light emitting device using an organic EL element comprising an anode layer, a cathode layer, and an organic compound layer provided between the anode layer and the cathode layer, wherein the organic compound layer is a zeolite. Or a light-emitting device which is in contact with zeolite. 10. A light emitting device using an organic EL element comprising an anode layer, a cathode layer, and an organic compound layer provided between the anode layer and the cathode layer, wherein the organic compound layer is a zeolite. Or is in contact with zeolite, wherein the zeolite contains a metal element having an atomic number equal to or greater than rubidium. 11. A light emitting device using an organic EL element comprising an anode layer, a cathode layer, and an organic compound layer provided between the anode layer and the cathode layer, wherein the organic compound layer is a zeolite. Or a zeolite, and the zeolite contains an alkali metal element or an alkaline earth metal element. 12. The light emitting device according to claim 11, wherein
The light emitting device according to claim 1, wherein the zeolite includes rubidium, strontium, cesium, or barium. 13. An electric appliance using the light emitting device according to claim 1. Description: